CN219064429U - Film thickness tester - Google Patents
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- CN219064429U CN219064429U CN202223606945.7U CN202223606945U CN219064429U CN 219064429 U CN219064429 U CN 219064429U CN 202223606945 U CN202223606945 U CN 202223606945U CN 219064429 U CN219064429 U CN 219064429U
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Abstract
The embodiment of the application provides a film thickness tester, which comprises a sample placing table, a mounting piece, a light source module, a probe and a detection analysis module; the sample placing table is used for placing a film sample to be tested; the mounting piece is arranged above the sample placing table; the light source module comprises a light source, a first collimating lens and a light outlet, and the first collimating lens is arranged between the light source and the light outlet; the probe comprises a first section, a second section and a third section, wherein the first section, the second section and the third section form a Y-shaped structure, the tail end of the first section is connected with the light outlet, and the tail end of the second section is connected with the mounting piece; the tail end of the third section is connected with a detection and analysis module, and the detection and analysis module obtains film thickness data according to the reflected light; the film thickness data of the film sample to be detected can be rapidly and accurately measured, and the film of the film sample to be detected is not damaged.
Description
Technical Field
Embodiments of the present application relate to the field of optical instruments, and more particularly, to a film thickness tester.
Background
Semiconductor chips have a wide range of applications, and film thickness of a silicon wafer is one of the important parameters of chip quality. In the semiconductor manufacturing process, the wafer is subjected to film deposition of various materials for many times, so that the thickness and the property of the film layer have critical influence on the imaging processing result of the wafer, and the thickness of the film layer on the surface of the wafer needs to be tested to ensure the yield of the wafer. Some current detection methods, such as metallographic film thickness detection methods, have the risk of damaging the film.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the application provides a film thickness tester, which can rapidly and accurately finish the measurement of film thickness data of a film sample to be tested, and can not damage the film of the film sample to be tested.
In an embodiment of the present application, a film thickness tester includes:
the sample placing table is used for placing a film sample to be tested;
the mounting piece is arranged above the sample placing table;
the light source module comprises a light source, a first collimating lens and a light outlet, wherein the first collimating lens is arranged between the light source and the light outlet;
the probe comprises a first section, a second section and a third section, wherein the first section, the second section and the third section form a Y-shaped structure, the tail end of the first section is connected with the light outlet, and the tail end of the second section is connected with the mounting piece;
the tail end of the third section is connected with the detection and analysis module, and the detection and analysis module is used for obtaining film thickness data of the film sample to be detected according to reflected light formed by reflecting the detection light by the film sample to be detected.
In certain embodiments of the present application, the light source comprises a deuterium lamp and a tungsten halogen lamp; the deuterium lamp and the halogen tungsten lamp are mounted to a lamp socket heat sink.
In certain embodiments of the present application, the deuterium lamp is mounted above the lamp holder heat sink and the tungsten halogen lamp is mounted to the side of the lamp holder heat sink.
In certain embodiments of the present application, the mount comprises a light pipe that is perpendicular to the sample placement stage.
In certain embodiments of the present application, the sample placement stage is provided with a vertical rod, the vertical rod is slidably connected with a slider, and the light pipe is connected with the slider.
In some embodiments of the present application, the detection analysis module includes a diaphragm, a second collimating lens, a grating, and a photodetector that are sequentially disposed.
In some embodiments of the present application, the diaphragm is disposed at a light inlet of the detection analysis module.
In some embodiments of the present application, the light inlet is provided with a knife edge slit.
In certain embodiments of the present application, the knife-edge slit has a width of 50 microns, 100 microns, or 200 microns.
In certain embodiments of the present application, the light source module and the detection analysis module are integrated within a protective housing.
The film thickness tester at least has the following beneficial effects: horizontally placing a film sample to be tested on a sample placing table; turning on a light source of the light source module, emitting light by the light source, and collimating detection light emitted by the light source through a first collimating lens and emitting the detection light from a light outlet; the detection light emitted by the light source passes through the first section and the second section of the probe and irradiates the film sample to be detected on the sample placing table; the film sample to be detected reflects the detection light, and reflected light formed by the reflection of the detection light by the film sample to be detected enters the detection analysis module through the second section and the third section of the probe; and the detection and analysis module detects and analyzes the reflected light, and obtains the film thickness data of the film sample to be detected according to the reflected light formed by the reflection of the detection light by the film sample to be detected. The film thickness data of the film sample to be detected can be rapidly and accurately measured, and the film of the film sample to be detected is not damaged.
Drawings
The accompanying drawings are included to provide a further understanding of the technical aspects of the present application, and are incorporated in and constitute a part of this specification, illustrate the technical aspects of the present application and together with the examples of the present application, and not constitute a limitation of the technical aspects of the present application.
FIG. 1 is a block diagram of a film thickness tester provided in an embodiment of the present application;
fig. 2 is a block diagram of another aspect of the film thickness tester provided in the embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
It should be noted that although functional block division is performed in a device diagram and a logic sequence is shown in a flowchart, in some cases, the steps shown or described may be performed in a different order than the block division in the device, or in the flowchart. The terms first, second and the like in the description, in the claims and in the above-described figures, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order.
Embodiments of the present application are further described below with reference to the accompanying drawings.
In certain embodiments of the present application, a film thickness tester is provided.
Referring to fig. 1 and 2, the film thickness tester includes a sample placement stage 100, a mount 200, a light source module 600, a probe 300, and a detection analysis module 700.
The sample placing table 100 is used for placing a film sample to be tested; the mount 200 is disposed above the sample placement stage 100; the light source module 600 includes a light source, a first collimating lens and a light outlet, the first collimating lens being disposed between the light source and the light outlet; the probe 300 comprises a first section 310, a second section 320 and a third section 300, wherein the first section 310, the second section 320 and the third section 300 form a Y-shaped structure, the tail end of the first section 310 is connected with the light outlet, and the tail end of the second section 320 is connected with the mounting piece 200; the end of the third section 300 is connected to a detection and analysis module 700, and the detection and analysis module 700 is configured to obtain film thickness data of the film sample to be detected according to reflected light formed by reflecting the probe light by the film sample to be detected.
In this embodiment, the film sample to be measured is placed flat on the sample placement stage 100; turning on a light source of the light source module 600, emitting light from the light source, and collimating the detection light emitted by the light source through the first collimating lens and emitting the detection light from the light outlet; the detection light emitted by the light source passes through the first section 310 and the second section 320 of the probe 300 and is emitted to the film sample to be detected on the sample placing table 100; the film sample to be detected reflects the detection light, and the reflected light formed by the reflection of the detection light by the film sample to be detected enters the detection analysis module 700 through the second section 320 and the third section 300 of the probe 300; the detection and analysis module 700 detects and analyzes the reflected light, and obtains film thickness data of the film sample to be detected according to the reflected light formed by the reflection of the detection light by the film sample to be detected. The film thickness data of the film sample to be detected can be rapidly and accurately measured, and the film of the film sample to be detected is not damaged.
It should be noted that, the principle of the detection and analysis module 700 for obtaining the film thickness data of the film sample to be measured according to the reflected light can be deduced according to the related existing principle.
Specifically, the principle of obtaining film thickness data of a film sample to be measured according to reflected light formed by reflecting detection light by the film sample to be measured is as follows:
when the detection light irradiates the surface reflection of the film sample to be detected, the thickness of the light-absorbing medium layer on the silicon wafer substrate which does not absorb light can be calculated according to the reflectivity at the top and the bottom of the film. When the detection light is used as incident light to penetrate through interfaces of different film structures, part of the light is reflected, and the film thickness can be calculated according to the interference distance of the reflected light of a plurality of interfaces.
The interference peak of the reflection spectrum curve mainly comprises two components of direct reflection light and reflected refraction light after primary reflection in the film layer, and the conditions of the direct reflection and the interference of the reflected refraction light after primary reflection are as follows:
wherein n is 1 Refractive index of air, n 2 The refractive index of the film layer, d is the thickness of the film layer, i is the incident angle, and θ is the refraction angle. The enhancement means that the direct reflected light and the reflected refraction light in the test film layer are enhanced in phase, corresponding to the peak value of the reflection spectrum curve, and the valley value corresponding to the reflection spectrum curve is weakened.
In the film thickness tester, the mount 200 is vertically directed to the sample placement stage 100 such that the angle of incident light is 0, so i=0, θ tends to 0, and the formula is modified as follows:
assuming that the reflected spectrum has a pair of adjacent peaks and valleys, the corresponding spectral wavelength is lambda 1 And lambda (lambda) 2 The following steps are: 2n 2 d＝kλ 1 And 2n 2 d＝(k-1/2)λ 2 The method comprises the steps of carrying out a first treatment on the surface of the And further can obtain a film thickness of
The film thickness of the film sample to be measured can be calculated from the known refractive index of the film sample to be measured and the reflectance spectrum of the film sample to be measured obtained according to the reflected light measurement.
In certain embodiments of the present application, the light source comprises a deuterium lamp and a tungsten halogen lamp; the deuterium lamp is arranged above the lamp holder heat dissipation piece, and the halogen tungsten lamp is arranged at the side edge of the lamp holder heat dissipation piece.
Through deuterium lamp and halogen tungsten lamp combination, can obtain the full spectrum light source of 200nm to 2500nm, be favorable to being applicable to the reflection of different material types's film sample that awaits measuring, promote the detection precision of reflected light, promote the application scope of film thickness tester.
The deuterium lamp and the halogen tungsten lamp have high power and high heat generation, and are arranged on the lamp holder heat dissipation piece; the heat generated by the operation of the deuterium lamp and the halogen tungsten lamp is radiated through the lamp holder radiating piece, which is beneficial to reducing the temperature of the deuterium lamp and the halogen tungsten lamp in the working state and improving the service life of the deuterium lamp and the halogen tungsten lamp.
Of course, in other embodiments, the light source may also consist of other types of lamps.
In some embodiments of the present application, mount 200 includes a light pipe 210; the probe light emitted from the light source passes through the first section 310 and the second section 320 of the probe 300 and is emitted from the light pipe 210 to the film sample to be measured on the sample placing stage 100, and since the light pipe 210 is perpendicular to the sample placing stage 100, the probe light emitted from the light pipe 210 is emitted to the film sample to be measured perpendicularly, so that the angle of the incident light is 0.
In some embodiments of the present application, the sample placement stage 100 is provided with a vertical rod 410, the vertical rod 410 is slidably connected with a sliding member 420, and the light pipe 210 is connected with the sliding member 420. The slider 420 is moved along the vertical rod 410 to adjust the height of the light guide 210 and the distance between the light guide 210 and the sample placement stage 100.
In some embodiments of the present application, the detection analysis module 700 includes a diaphragm, a second collimating lens, a grating, and a photodetector that are sequentially disposed.
The diaphragm is arranged at the light inlet of the detection and analysis module 700. The light inlet is provided with a knife edge slit. The knife-edge slit has a width of 50 microns, 100 microns or 200 microns.
Of course, in other embodiments, the width of the knife-edge slit may be other values, such as 150 microns.
In this embodiment, the reflected light passes through the second section 320 and the third section 300 of the probe 300 and enters the detection and analysis module 700 from the light entrance of the detection and analysis module 700. The reflected light is emitted to the second collimating lens through the diaphragm at the light inlet, the second collimating lens converges the reflected light on the grating, the grating decomposes the compound-color light of the reflected light into monochromatic light, the monochromatic light after being split by the grating irradiates the photoelectric detector, the photoelectric detector converts the received monochromatic light into an electric signal for reflectivity detection, and the reflectivity spectrum of the film sample to be detected is obtained. And finally, the film thickness of the film sample to be measured can be calculated by the film thickness tester according to the known refractive index of the film sample to be measured and the reflectivity spectrum of the film sample to be measured obtained according to the reflected light measurement.
In certain embodiments of the present application, the light source module 600 and the detection and analysis module 700 are integrated within the protective enclosure 500. The protective case 500 protects the light source module 600 and the detection and analysis module 700. In addition, the light source module 600 and the detection and analysis module 700 are integrated in one protective case 500, and the convenience of movement of the film thickness tester is also improved.
While embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the application, the scope of which is defined by the examples and their equivalents.
While the preferred embodiments of the present application have been described in detail, the present application is not limited to the embodiments, and various equivalent modifications and substitutions can be made by those skilled in the art without departing from the spirit of the present application, and these equivalent modifications and substitutions are intended to be included in the scope of the present application.
Claims (10)
1. A film thickness tester, comprising:
the sample placing table is used for placing a film sample to be tested;
the mounting piece is arranged above the sample placing table;
the light source module comprises a light source, a first collimating lens and a light outlet, wherein the first collimating lens is arranged between the light source and the light outlet;
the probe comprises a first section, a second section and a third section, wherein the first section, the second section and the third section form a Y-shaped structure, the tail end of the first section is connected with the light outlet, and the tail end of the second section is connected with the mounting piece;
the tail end of the third section is connected with the detection and analysis module, and the detection and analysis module is used for obtaining film thickness data of the film sample to be detected according to reflected light formed by reflecting the detection light by the film sample to be detected.
2. The film thickness tester according to claim 1, wherein the light source comprises deuterium lamps and halogen tungsten lamps; the deuterium lamp and the halogen tungsten lamp are mounted to a lamp socket heat sink.
3. The film thickness tester as recited in claim 2, wherein the deuterium lamp is mounted above the lamp socket heat sink and the tungsten halogen lamp is mounted to a side of the lamp socket heat sink.
4. The film thickness tester as recited in claim 1, wherein the mounting member includes a light pipe that is perpendicular to the sample placement stage.
5. The film thickness tester as claimed in claim 4, wherein the sample placement stage is provided with a vertical rod, the vertical rod is slidably connected with a slider, and the light pipe is connected with the slider.
6. The film thickness tester according to claim 1, wherein the detection and analysis module comprises a diaphragm, a second collimating lens, a grating and a photodetector, which are sequentially arranged.
7. The film thickness tester as claimed in claim 6, wherein the diaphragm is disposed at the light inlet of the detection and analysis module.
8. The film thickness tester as recited in claim 7, wherein the light inlet is provided with a knife-edge slit.
9. The film thickness tester as claimed in claim 8, wherein the knife-edge slit has a width of 50 microns, 100 microns or 200 microns.
10. The film thickness tester as recited in claim 1, wherein the light source module and the detection and analysis module are integrated within a protective housing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223606945.7U CN219064429U (en) | 2022-12-30 | 2022-12-30 | Film thickness tester |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223606945.7U CN219064429U (en) | 2022-12-30 | 2022-12-30 | Film thickness tester |
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| Publication Number | Publication Date |
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| CN219064429U true CN219064429U (en) | 2023-05-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202223606945.7U Active CN219064429U (en) | 2022-12-30 | 2022-12-30 | Film thickness tester |
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| CN (1) | CN219064429U (en) |
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