CN114739300A - Method for measuring epitaxial layer thickness of epitaxial wafer - Google Patents
Method for measuring epitaxial layer thickness of epitaxial wafer Download PDFInfo
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- CN114739300A CN114739300A CN202210340751.2A CN202210340751A CN114739300A CN 114739300 A CN114739300 A CN 114739300A CN 202210340751 A CN202210340751 A CN 202210340751A CN 114739300 A CN114739300 A CN 114739300A
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000001228 spectrum Methods 0.000 claims abstract description 34
- 238000005259 measurement Methods 0.000 claims abstract description 26
- 230000003595 spectral effect Effects 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 claims description 69
- -1 titanium sulfate triglyme Chemical compound 0.000 claims description 7
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 3
- AEEAZFQPYUMBPY-UHFFFAOYSA-N [I].[W] Chemical compound [I].[W] AEEAZFQPYUMBPY-UHFFFAOYSA-N 0.000 claims description 3
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- DKDQMLPMKQLBHQ-UHFFFAOYSA-N strontium;barium(2+);oxido(dioxo)niobium Chemical compound [Sr+2].[Ba+2].[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O.[O-][Nb](=O)=O DKDQMLPMKQLBHQ-UHFFFAOYSA-N 0.000 claims description 3
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 claims description 3
- 229910003452 thorium oxide Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- PGAPATLGJSQQBU-UHFFFAOYSA-M thallium(i) bromide Chemical compound [Tl]Br PGAPATLGJSQQBU-UHFFFAOYSA-M 0.000 description 1
- CMJCEVKJYRZMIA-UHFFFAOYSA-M thallium(i) iodide Chemical compound [Tl]I CMJCEVKJYRZMIA-UHFFFAOYSA-M 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The invention relates to the technical field of semiconductors, and provides a method for measuring the thickness of an epitaxial layer of an epitaxial wafer, which is a built-in Reference wafer measuring method (FROC, Fixed Reference On Chuck), and comprises the following steps: disposing an epitaxial wafer on a stage, wherein the stage comprises a chuck and a boss connected to and extending from the chuck, wherein a reference wafer is disposed on the boss, wherein an epitaxial wafer is disposed on the chuck; configuring the formula parameters of the spectral measurement system; measuring a reference spectrum of the reference wafer by the spectrum measurement system and measuring a sample spectrum of the epitaxial wafer; determining a reference spectrum from the reference spectrum and the sample spectrum; determining a characteristic band of the control spectrum according to the recipe parameters; and determining the thickness of the epitaxial layer of the epitaxial wafer according to the characteristic waveband.
Description
Technical Field
The present invention relates generally to the field of semiconductor technology. In particular, the invention relates to a method for measuring the thickness of an epitaxial layer of an epitaxial wafer.
Background
An epitaxial wafer typically includes a substrate and an epitaxial layer deposited on the substrate. By depositing the epitaxial layer, defects on the wafer during crystal growth and machining of the conventional wafer can be eliminated. Therefore, the epitaxial wafer has better quality than the conventional wafer, and can be better applied to high-precision and small-sized devices, but the quality of the epitaxial wafer is also required to be higher. Generally, the most significant influence on the quality of an epitaxial wafer is the uniformity of the thickness and resistivity of the epitaxial layer, so that it is important to measure the thickness of the epitaxial wafer in actual production.
Conventional systems for measuring the thickness of an epitaxial layer usually only have a single object-carrying chuck, a Reference Wafer is stored outside the system, and a Reference Wafer (Reference Wafer) and an epitaxial Wafer are respectively placed on the object-carrying chuck for measurement during the measurement process.
However, the reference slices stored outside the system are easily confused in management, and a user is easily confused between different reference slices or loses reference slices during use. And since the reference wafer is stored outside the system, when a deviation occurs in the measured value of the epitaxial wafer, it is difficult to quickly determine whether the deviation is caused by the deviation of the system or the deviation of the epitaxial wafer. In addition, since a reference wafer and an epitaxial wafer need to be placed on the carrier chuck respectively for measurement in the measurement process, the operation efficiency of the system needs to be improved.
Disclosure of Invention
To at least partially solve the above problems in the prior art, the present invention provides a method for measuring the thickness of an epitaxial layer of an epitaxial wafer, which is a built-in Reference wafer measurement method (FROC) comprising the steps of:
disposing an epitaxial wafer on a stage, wherein the stage comprises a chuck and a boss connected to and extending from the chuck, wherein a reference wafer is disposed on the boss, wherein an epitaxial wafer is disposed on the chuck;
configuring the formula parameters of the spectral measurement system;
measuring a reference spectrum of the reference wafer by the spectrum measurement system and measuring a sample spectrum of the epitaxial wafer;
determining a reference spectrum from the reference spectrum and the sample spectrum;
determining a characteristic band of the control spectrum according to the recipe parameters; and
and determining the thickness of the epitaxial layer of the epitaxial wafer according to the characteristic waveband.
In one embodiment of the invention, it is provided that the reference plate is configured to fit the size and shape of the projection.
In one embodiment of the invention it is provided that the reference plate is a gold-plated reference plate, wherein the contrast of the control spectrum is enhanced by measuring a reference spectrum of the gold-plated reference plate.
In one embodiment of the invention, it is provided that the chuck has vacuum openings.
In one embodiment of the invention, it is provided that the chuck has a plurality of chuck regions, wherein the plurality of chuck regions are configured to fit epitaxial wafers of different sizes.
In one embodiment of the invention, it is provided that the spectral measurement system comprises a light source, a beam splitter, a detector and a data processing system.
In one embodiment of the invention, it is provided that the light source comprises a near-infrared light source, a mid-infrared light source and a far-infrared light source.
In one embodiment of the invention, it is provided that the near-infrared light source comprises a tungsten lamp or a tungsten-iodine lamp; and/or
The intermediate infrared light source comprises a silicon carbide rod or a ceramic light source; and/or
The far infrared light source comprises a high-pressure pump lamp or a thorium oxide lamp.
In one embodiment of the invention, the detectors include a titanium sulfate triglyme detector, a barium strontium niobate detector, a mercury cadmium telluride detector, an indium antimonide detector, and a titanium sulfate deuteride detector.
The invention has at least the following beneficial effects: the invention arranges the reference sheet in the system for measurement, can avoid the management confusion, is beneficial to quickly judging the measurement deviation and improves the measurement efficiency. In addition, a gold-plated reference wafer can be arranged in the invention to simulate the reference wafer with zero epitaxial layer thickness and the optical intensity in a monitoring system.
Drawings
To further clarify advantages and features that may be present in various embodiments of the present invention, a more particular description of various embodiments of the present invention will be rendered by reference to the appended drawings. It is appreciated that these drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. In the drawings, the same or corresponding parts will be denoted by the same or similar reference numerals for clarity.
FIG. 1 shows a schematic view of an object table in an embodiment of the invention.
Fig. 2 is a flow chart illustrating a method for measuring the thickness of an epitaxial layer according to an embodiment of the present invention.
Detailed Description
It should be noted that the components in the figures may be shown exaggerated for illustrative purposes and are not necessarily to scale. In the figures, identical or functionally identical components are provided with the same reference symbols.
In the present invention, "disposed on …", "disposed over …" and "disposed over …" do not exclude the presence of an intermediate therebetween, unless specifically indicated otherwise. Further, "disposed on or above …" merely indicates the relative positional relationship between two components, and may also be converted to "disposed below or below …" and vice versa in certain cases, such as after reversing the product direction.
In the present invention, the embodiments are only intended to illustrate the aspects of the present invention, and should not be construed as limiting.
In the present invention, the terms "a" and "an" do not exclude the presence of a plurality of elements, unless otherwise specified.
It is further noted herein that in embodiments of the present invention, only a portion of the components or assemblies may be shown for clarity and simplicity, but those of ordinary skill in the art will appreciate that, given the teachings of the present invention, required components or assemblies may be added as needed in a particular scenario. In addition, features in different embodiments of the invention may be combined with each other, unless otherwise specified. For example, a feature of the second embodiment may be substituted for a corresponding or functionally equivalent or similar feature of the first embodiment, and the resulting embodiments are likewise within the scope of the disclosure or recitation of the present application.
It is also noted herein that, within the scope of the present invention, the terms "same", "equal", and the like do not mean that the two values are absolutely equal, but allow some reasonable error, that is, the terms also encompass "substantially the same", "substantially equal". By analogy, in the present invention, the terms "perpendicular", "parallel" and the like in the directions of the tables also cover the meanings of "substantially perpendicular", "substantially parallel".
The numbering of the steps of the methods of the present invention does not limit the order of execution of the steps of the methods. Unless specifically stated, the method steps may be performed in a different order.
The invention is further elucidated with reference to the drawings in conjunction with the detailed description.
In one embodiment of the invention, a system for measuring the epitaxial layer thickness of an epitaxial wafer is provided and includes a measuring device and a stage.
The measurement device may be a Fourier Transform Infrared Spectrometer (FTIR) that can measure spectra of the epitaxial wafer as well as the reference wafer.
The spectral measurement system may include a light source, a beam splitter, a detector, and a data processing system.
The light source may include a near infrared light source, a mid infrared light source, and a far infrared light source. Wherein the near-infrared light source comprises a tungsten lamp or a iodine tungsten lamp; and/or the mid-infrared light source comprises a silicon carbide rod or a ceramic light source; and \ the far infrared light source comprises a high-pressure pump lamp or a thorium oxide lamp.
The beam splitter can divide an incident beam into two parts of reflected light and transmitted light, and then the reflected light and the transmitted light are compounded, if the movable mirror enables the two beams of light to form a certain optical path difference, the compounded beams of light can form constructive or destructive interference.
The detector comprises a titanium sulfate triglycerin detector (TGS), a barium strontium niobate detector, a mercury cadmium telluride detector, an indium antimonide detector and a deuterated titanium sulfate triglycerin Detector (DTGS), wherein the deuterated titanium sulfate triglycerin detector can comprise a KRS-5 window (thallium iodide bromide infrared window) and a KBr (potassium bromide) or ZnSe (zinc selenide) spectroscope in a spectrometer.
FIG. 1 shows a schematic view of an object table, which may include a Chuck (Chuck)101 and a stage 102, according to an embodiment of the present invention.
The chuck 101 is configured to carry an epitaxial wafer to be measured. The boss 102 is connected to the chuck 101, wherein a reference sheet is disposed on the boss 102, and the number of the boss 102 and the reference sheet may be one or more. Taking the stage shown in fig. 1 as an example, the stage is provided with two of the bosses 102.
The conventional system for measuring the thickness of the epitaxial layer is generally provided with only a single carrier chuck, the reference wafer is stored outside the system, and the reference wafer and the epitaxial wafer are required to be respectively placed on the carrier chuck for measurement in the measurement process.
However, the reference slices stored outside the system are easily confused in management, and a user is easily confused between different reference slices or loses reference slices during use. And since the reference wafer is stored outside the system, when a deviation occurs in the measured value of the epitaxial wafer, it is difficult to quickly determine whether the deviation is caused by the deviation of the system or the deviation of the epitaxial wafer. In addition, since a reference wafer and an epitaxial wafer need to be placed on the carrier chuck respectively for measurement in the measurement process, the operation efficiency of the system needs to be improved.
In the present invention, the reference plate is fixedly disposed on the boss 102 inside the system, so that the above-mentioned problem can be avoided.
The chuck 101 may have vacuum holes 103 therein, wherein the evacuation of the surface of the chuck 101 may be controlled by a solenoid valve controlled switch. Further, the chuck 101 may be provided with a plurality of chuck regions in order to accommodate epitaxial wafers of different sizes, for example, the first region 1011 and the second region 1012 may be provided as shown in fig. 1.
While a conventional system for measuring the thickness of the epitaxial layer usually uses a whole epitaxial wafer with a known epitaxial layer thickness, the present invention may use a diced small wafer with a known epitaxial layer thickness adapted to the size of the boss 102, and the reference wafer may be, for example, a square with a side length of 2cm and a thickness of 550 um.
In addition, the reference plate can be a gold-plated reference plate which has the characteristics of light intensity reflection, data traceability and long-term use and is equivalent to a reference plate with the thickness of an epitaxial layer being 0 in the process of measurement. The gold-plated reference plate has the characteristics of strong reflected light and less infrared light loss in the epitaxial layer thickness measurement process, so that the reference spectrum of the gold-plated reference plate can be measured to effectively enhance the spectral contrast, and errors caused by a spectrometer, air and the epitaxial wafer in the epitaxial layer thickness measurement can be effectively eliminated. In addition, the gold-plated reference plate can also be used to monitor the optical intensity of the spectral measurement system in the system.
The gold-plated reference plate may be placed on one of the plurality of bosses 102 of the stage. Still taking the stage shown in fig. 1 as an example, the gold-plated reference wafer is placed on one of the two bosses 102, and a cut die reference wafer with a known epitaxial layer thickness can be placed on the other boss 102.
Fig. 2 shows a schematic flow chart of a method for measuring the thickness of an epitaxial layer in an embodiment of the invention. As shown in fig. 2, the method may include the steps of:
arranging an epitaxial wafer to be measured on an object stage 100, wherein the object stage comprises a chuck 101 and a boss 102, the boss 102 is provided with a fixed reference wafer, and the epitaxial wafer is arranged on the chuck 101.
Step 200, configuring Recipe parameters (Recipe) of the spectral measurement system.
And step 300, measuring a reference spectrum of the reference wafer through the spectrum measuring system, and measuring a sample spectrum of the epitaxial wafer.
Step 400, determining a control spectrum according to the reference spectrum and the sample spectrum.
Step 500, determining the characteristic wave band of the reference spectrum according to the formula parameters.
And step 600, determining the thickness of the epitaxial layer of the epitaxial wafer according to the characteristic wave band.
While various embodiments of the present invention have been described above, it should be understood that they have been presented by way of example only, and not limitation. It will be apparent to persons skilled in the relevant art that various combinations, modifications, and changes can be made thereto without departing from the spirit and scope of the invention. Thus, the breadth and scope of the present invention disclosed herein should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.
Claims (9)
1. A method of measuring the thickness of an epitaxial layer of an epitaxial wafer, comprising the steps of:
disposing an epitaxial wafer on a stage, wherein the stage comprises a chuck and a boss connected to and extending from the chuck, wherein a reference wafer is disposed on the boss, wherein an epitaxial wafer is disposed on the chuck;
configuring the formula parameters of the spectral measurement system;
measuring a reference spectrum of the reference wafer by the spectrum measurement system and measuring a sample spectrum of the epitaxial wafer;
determining a reference spectrum from the reference spectrum and the sample spectrum;
determining a characteristic band of the control spectrum according to the recipe parameters; and
and determining the thickness of the epitaxial layer of the epitaxial wafer according to the characteristic waveband.
2. The method of measuring epitaxial layer thickness of an epitaxial wafer of claim 1, wherein the reference wafer is configured to fit the size and shape of the boss.
3. The method of claim 1, wherein the reference plate comprises a gold-plated reference plate, wherein the reference spectrum of the gold-plated reference plate is measured to enhance the contrast of the control spectrum.
4. The method of measuring epitaxial layer thickness of an epitaxial wafer according to claim 1, characterized in that the chuck has vacuum holes.
5. The method of claim 4, wherein the chuck has a plurality of chuck regions, wherein the plurality of chuck regions are configured to mate with different sized epitaxial wafers.
6. The method of measuring epitaxial layer thickness of an epitaxial wafer of claim 1, wherein the spectroscopic measurement system comprises a light source, a beam splitter, a detector and a data processing system.
7. The method of measuring the epitaxial layer thickness of an epitaxial wafer according to claim 6, wherein the light source comprises a near infrared light source, a mid infrared light source and a far infrared light source.
8. The method of measuring the epitaxial layer thickness of an epitaxial wafer according to claim 7, wherein the near infrared light source comprises a tungsten lamp or a tungsten iodine lamp; and/or
The intermediate infrared light source comprises a silicon carbide rod or a ceramic light source; and/or
The far infrared light source comprises a high-pressure pump lamp or a thorium oxide lamp.
9. The method of claim 6, wherein the detector comprises a titanium sulfate triglyme detector, a barium strontium niobate detector, a mercury cadmium telluride detector, an indium antimonide detector, and a titanium sulfate deuteride detector.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210340751.2A CN114739300A (en) | 2022-03-29 | 2022-03-29 | Method for measuring epitaxial layer thickness of epitaxial wafer |
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| CN202210340751.2A CN114739300A (en) | 2022-03-29 | 2022-03-29 | Method for measuring epitaxial layer thickness of epitaxial wafer |
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