CN112146581A - Method and device for measuring film thickness - Google Patents
Method and device for measuring film thickness Download PDFInfo
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- CN112146581A CN112146581A CN201910561172.9A CN201910561172A CN112146581A CN 112146581 A CN112146581 A CN 112146581A CN 201910561172 A CN201910561172 A CN 201910561172A CN 112146581 A CN112146581 A CN 112146581A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
Abstract
The invention provides a method and a device for measuring the thickness of a film, wherein the method comprises the following steps: obtaining calibration parameters: measuring the thickness of a thin film layer of a reference sample by adopting a first measuring method to obtain a first thickness of the thin film layer of the reference sample; measuring the thickness of the thin film layer of the reference sample by adopting a second measuring method to obtain a second thickness of the thin film layer of the reference sample; comparing the first thickness with the second thickness to obtain the calibration parameter; obtaining the thickness of a thin film layer of a sample to be detected: measuring the initial thickness of a thin film layer of a sample to be measured by adopting the first measuring method, wherein the sample to be measured and the reference sample are the same type of sample; and calibrating the initial thickness by using the calibration parameters to obtain the thickness of the thin film layer of the sample to be measured. The thickness of its structure that can overlap to the thickness of ultra-thin single-layer film and multilayer film layer carries out the accuracy measurement, improves measurement accuracy.
Description
Technical Field
The invention relates to the technical field of measurement, in particular to a method and a device for measuring the thickness of a thin film.
Background
Thin film technology plays an increasingly important role in various high-tech fields. The research and application of various thin films is becoming increasingly widespread in many sectors of modern science and technology. For thin films, the film thickness and refractive index are important parameters, and determine the mechanical properties, electromagnetic properties, photoelectric properties and optical properties of the thin film to a certain extent. It has become very urgent and important to accurately measure the thickness and refractive index of the thin film.
The ellipsometry is an advanced method for measuring the nano-scale thickness of a thin film, and can be used in various environments such as high vacuum, air, water vapor and the like. The elliptical polarization method has the characteristics of high sensitivity (capable of detecting thickness change of a growing film smaller than 0.1 nm), high precision (one to two orders of magnitude higher than that of a common interference method) and non-destructiveness. At present, the measurement of the elliptical polarization method is widely applied to the aspects of optics, semiconductors, biology, medicine and the like. However, the elliptical polarization method has the disadvantages that the thickness of the ultrathin film with a small thickness, such as a gate oxide layer, is only 2-5 nm, and the measurement of the elliptical polarization method is inaccurate; for a structure with a plurality of overlapped thin film layers, such as a SiN/Oxide/SiN thin film structure or a SiN/Oxide thin film structure, interference occurs between the thin film layers, which results in inaccurate measurement by an elliptical polarization method.
Therefore, a method for measuring the thickness of the ultra-thin film and the structure in which a plurality of thin film layers are overlapped is needed.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method and a device for measuring the thickness of a film, which can accurately measure the thickness of an ultrathin single-layer film and the thickness of a film layer of a structure with a plurality of overlapped film layers.
In order to solve the above problems, the present invention provides a method for measuring a film thickness, comprising the steps of: obtaining calibration parameters: measuring the thickness of a thin film layer of a reference sample by adopting a first measuring method to obtain a first thickness of the thin film layer of the reference sample; measuring the thickness of the thin film layer of the reference sample by adopting a second measuring method to obtain a second thickness of the thin film layer of the reference sample; comparing the first thickness with the second thickness to obtain the calibration parameter; obtaining the thickness of a thin film layer of a sample to be detected: measuring the initial thickness of a thin film layer of a sample to be measured by adopting the first measuring method, wherein the sample to be measured and the reference sample are the same type of sample; and calibrating the initial thickness by using the calibration parameters to obtain the thickness of the thin film layer of the sample to be measured.
In one embodiment, the step of obtaining calibration parameters comprises the steps of: measuring the thickness of the thin film layer of the reference sample at a measuring point by adopting a first measuring method to obtain the first thickness of the thin film layer of the reference sample at the measuring point; measuring the thickness of the thin film layer of the reference sample at the measuring point by adopting a second measuring method to obtain a second thickness of the thin film layer of the reference sample at the measuring point; comparing the first thickness with the second thickness to obtain an initial parameter; and normalizing the plurality of initial parameters to obtain the calibration parameters.
In an embodiment, the sample to be measured and the reference sample have the same measuring point, and the step of obtaining the thickness of the thin film layer of the sample to be measured further includes the steps of: measuring the initial thickness of the thin film layer of the sample to be measured at a measuring point by adopting the first measuring method; and calibrating the initial thickness by using the calibration parameters to obtain the thickness of the thin film layer of the sample to be measured at the measuring point.
In one embodiment, the reference sample and the sample to be tested each include a plurality of thin film layers alternately arranged.
In one embodiment, the total thickness of the plurality of alternating thin film layers is less than 10 nanometers.
In one embodiment, the reference sample and the sample to be tested each include a thin film layer, and the thickness of the thin film layer is less than 10 nanometers.
In an embodiment, the first measurement method is an ellipsometry and the second measurement method is an X-ray photoelectron spectroscopy analysis method.
The invention also provides a measuring device for realizing the measuring method, which comprises the following steps: the device comprises a sample bearing table, a sample to be tested and a reference sample, wherein the reference sample and the sample to be tested can be placed on the sample bearing table; a first measurement component capable of implementing a first measurement method; a second measurement component capable of implementing a second measurement method; the comparison module is used for comparing the measurement result of the first measurement assembly with the measurement result of the second measurement assembly to obtain a calibration parameter; and the calibration module is used for calibrating the measurement result of the first measurement component by using the calibration parameter.
In one embodiment, the first measurement method is ellipsometry, and the first measurement assembly includes: the light source is arranged above the sample bearing table and can generate linearly polarized light; the detector can receive and detect the light intensity of the reflected light of the reference sample or the sample to be detected; and the processor is electrically connected with the detector, receives the signal of the detector and converts the signal into the thickness of the thin film layer of the reference sample or the sample to be measured, wherein the thickness of the thin film layer of the reference sample or the sample to be measured is the measurement result of the first measurement component.
In an embodiment, the second measurement method is an X-ray photoelectron spectroscopy analysis method, the second measurement assembly comprising: the X-ray source is arranged above the sample bearing table and can generate X-rays with a preset waveband; the magnetic spectrometer is arranged below the reference sample and is used for converging photoelectrons generated by X rays; the analyzer can acquire the photoelectrons and obtain the thickness of the thin film layer of the reference sample according to the photoelectron information, wherein the thickness of the thin film layer of the reference sample is the measurement result of the second measurement assembly.
The invention has the advantage that the thickness of the ultrathin single-layer film and the thickness of the film layer of the structure with the overlapped multiple film layers are accurately measured under the condition of greatly saving the measurement time.
Drawings
FIG. 1 is a schematic step diagram of a first embodiment of the method for measuring film thickness according to the present invention;
FIG. 2 is a schematic step diagram of a second embodiment of a method for measuring film thickness;
fig. 3 is a schematic structural diagram of an embodiment of the measuring device.
Detailed Description
The following describes in detail embodiments of the method and apparatus for measuring a film thickness according to the present invention with reference to the accompanying drawings.
The film thickness measuring method can measure the thickness of an ultrathin single-layer film and the thickness of a certain film layer of a structure with multiple overlapped film layers.
FIG. 1 is a schematic step diagram of a first embodiment of the method for measuring film thickness according to the present invention. In this embodiment, the thickness of the ultra-thin single-layer thin film is measured, and the thickness of the ultra-thin single-layer thin film is less than 10 nm. Referring to fig. 1, the method for measuring the thickness of the thin film includes the following steps:
first, calibration parameters are obtained. The method comprises the following specific steps:
step S10, measuring the thickness of the thin film layer of the reference sample by adopting a first measuring method to obtain the first thickness of the thin film layer of the reference sample.
The reference sample and a sample to be measured of the film thickness are the same type of sample, namely the reference sample and the sample to be measured are the same product. For example, the structure of the sample to be measured is that a layer of oxide thin film is arranged on a substrate, the structure of the reference sample is also that a layer of oxide thin film is arranged on the substrate, and the thicknesses of the oxide thin films of the reference sample and the sample to be measured are basically the same. Further, one sample among samples to be measured may be selected as the reference sample so that the reference sample has a referential property.
In this embodiment, the first measurement method is an ellipsometry method. The ellipsometry is a method for measuring the thickness of a thin film, which is commonly used in the prior art, and the principle of measuring the thickness of the thin film is to obtain the thickness information of a sample by measuring the intensity and phase change (i.e., ellipsometric parameters Ψ and Δ) of the polarization state of light reflected by a measured object.
And step S11, measuring the thickness of the thin film layer of the reference sample by adopting a second measuring method to obtain a second thickness of the thin film layer of the reference sample.
In this step, the thickness of the thin film layer of the reference sample is measured again using the second measurement method. The second measurement method is a different measurement method from the first measurement method, and the first thickness and the second thickness of the thin film layer of the reference sample may be different due to different measurement accuracy or sensitivity of the two measurement methods.
In this embodiment, the second measurement method is an X-ray photoelectron spectroscopy analysis method. X-ray photoelectron spectroscopy (XPS) is a method of irradiating a sample with X-rays to excite the emission of internal electrons or valence electrons of atoms or molecules. The electrons excited by photons are called photoelectrons, the energy of the photoelectrons can be measured, the kinetic energy of the photoelectrons is used as a horizontal coordinate, the relative intensity (pulse/s) is used as a vertical coordinate, and a photoelectron energy spectrogram can be made, so that the composition and the thickness of the object to be measured can be obtained.
Step S12, comparing the first thickness with the second thickness to obtain the calibration parameter.
In this step, the first thickness and the second thickness may be differentiated, and the obtained difference value may be used as the calibration parameter. For example, if the first thickness of the thin film layer of the reference sample obtained by the first measurement method is 2.3673nm, and the second thickness of the thin film layer of the reference sample obtained by the second measurement method is 4.1454nm, the difference between the second thickness and the first thickness is 1.7781nm, which is taken as the calibration parameter.
And secondly, obtaining the thickness of the thin film layer of the sample to be detected. The method comprises the following specific steps:
and step S13, measuring the initial thickness of the thin film layer of the sample to be measured by adopting the first measuring method.
The sample to be measured and the reference sample are the same type of sample, and the thin film layer measured in the measuring step is also the same thin film layer. That is, the thin film layer of the sample to be measured in this step and the thin film layer of the reference sample measured in the step of obtaining the calibration parameters are the same thin film layer. For example, in the present embodiment, in the step of acquiring the calibration parameter, the thin film layer of the reference sample as the measurement object is an oxide layer provided on the substrate, and in this step, the thin film layer of the sample to be measured as the measurement object is also an oxide layer provided on the substrate.
In this embodiment, the first measurement method is the same as the first measurement method for measuring the thickness of the thin film layer of the reference sample, and is also an ellipsometry method.
And step S14, calibrating the initial thickness by using the calibration parameters to obtain the thickness of the thin film layer of the sample to be measured. In this step, the initial thickness may be summed with the calibration parameter to obtain the thickness of the thin film layer of the sample to be measured. For example, the initial thickness is 2.2732nm, the calibration parameter is 1.7781nm, and then the thickness of the thin film layer of the sample to be tested is 4.0513 nm.
Further, in the present embodiment, the steps S13 and S14 are repeated to measure a plurality of samples to be measured of the same batch, so as to obtain the accurate thickness of the plurality of samples to be measured of the batch.
The existing elliptical polarization method has low measurement accuracy on the thickness of an ultrathin film with a thin thickness and the thickness of a film layer with a structure of overlapping a plurality of film layers, and the X-ray photoelectron spectroscopy analysis method has low measurement speed and wastes a large amount of measurement time. In addition, because the sensitivity of the X-ray photoelectron spectroscopy analysis method is less than 10nm, and the measurement accuracy of the X-ray photoelectron spectroscopy analysis method on the thin film layer with thicker thickness is not high, when the thickness of the thin film layer is measured by adopting the same measuring device, the X-ray photoelectron spectroscopy analysis method is not adopted for calibrating the sample to be measured with thicker thickness, and the thickness of the thin film layer can be measured by directly adopting the elliptical polarization method; the measurement method can be used for measuring a sample to be measured with a thin thickness or a structure with a plurality of overlapped film layers.
The present invention also provides a second embodiment of a method for measuring film thickness. The second embodiment differs from the first embodiment in the method of obtaining the calibration parameters. Fig. 2 is a schematic step diagram of a second embodiment of a method for measuring film thickness. Referring to fig. 2, the second embodiment includes the following steps:
step S20, selecting a plurality of measuring points on a reference sample, and measuring the thickness of the thin film layer of the reference sample at the measuring points by adopting a first measuring method to obtain the first thickness of the thin film layer of the reference sample at the measuring points. In this step, the measurement point at which the sample to be measured needs to be measured in the subsequent step may be taken as the measurement point of the reference sample. Since multiple measurement points are selected on the reference sample, this step can yield a first thickness for the multiple measurement points.
And step S21, measuring the thickness of the thin film layer of the reference sample at the measuring point by adopting a second measuring method to obtain a second thickness of the thin film layer of the reference sample at the measuring point. At which step a second thickness of the plurality of measurement points is obtained.
Step S22, comparing the first thickness and the second thickness of each measurement point to obtain an initial parameter. In this step, each measurement point corresponds to one initial parameter, and a plurality of initial parameters can be obtained.
Step S23, normalizing the plurality of initial parameters to obtain the calibration parameter. In the present embodiment, the method for normalizing the plurality of initial parameters is to take an average value of the plurality of initial parameters, and use the average value as the calibration parameter, thereby further improving the accuracy of the calibration parameter.
And step S24, measuring the initial thickness of the thin film layer of the sample to be measured at the measuring point by adopting the first measuring method. In this step, the measurement point of the sample to be measured is selected to be the same as the measurement point of the reference sample, so as to further improve the referential property of the calibration parameter.
And step S25, calibrating the initial thickness by using the calibration parameters to obtain the thickness of the thin film layer of the sample to be measured at the measuring point.
In this embodiment, a plurality of measurement points of the reference sample are measured to obtain a calibration parameter, which is more accurate.
The invention also provides a specific implementation mode of the measuring device for realizing the measuring method. Fig. 3 is a schematic structural diagram of an embodiment of the measuring device. Referring to fig. 3, the measuring apparatus includes a sample holder 30, a first measuring device 31, a second measuring device 32, a comparing module 33, and a calibrating module 34. The measurement path of the first measurement assembly 31 is schematically depicted in fig. 3 with solid arrows and the measurement path of the second measurement assembly 32 is schematically depicted with dashed arrows.
When a measurement is required, a sample 40 can be placed on the sample carrier stage 30. Wherein, the sample is a reference sample or a sample to be detected.
The first measuring component 31 is capable of implementing a first measuring method. In the present embodiment, the first measuring assembly 31 is a device capable of measuring the thickness of the thin film by an ellipsometry method. The first measurement component 31 includes a light source 310, a detector 311, and a processor 312.
The light source 310 is arranged above the sample holder 30 and is capable of generating a linearly polarized light. The light source 310 may pass through a polarizer 313 to generate the linearly polarized light. The linearly polarized light emitted by the light source is reflected by the sample 40 to form a reflected light. In the present embodiment, the light source 310 is disposed in the brewster angle direction of the sample 40, so that the reflected light is linearly polarized light and the vibration direction thereof is perpendicular to the incident surface.
The detector 311 is capable of receiving and detecting the light intensity of the reflected light of the sample 40. Further, the detector 311 further includes a detector 314, and the detector 314 is capable of determining the polarization state of the reflected light.
The processor 312 is electrically connected to the detector 311, and receives the signal from the detector 311 and converts the signal into the thickness of the thin film layer of the sample, where the thickness of the thin film layer of the sample is the measurement result of the first measurement component.
The second measurement assembly 32 is capable of implementing a second measurement method. In the present embodiment, the second measuring component 32 is a device capable of measuring the thickness of the thin film by the X-ray photoelectron spectroscopy, and needs to be placed in a vacuum environment. The second measurement assembly 32 includes an X-ray source 321, a magnetic spectrometer 322, and an analyzer 323.
The X-ray source 321 is disposed above the sample holder 30 and can generate X-rays with a predetermined wavelength band. Further, the X-ray source 321 includes a high-energy electron gun 321A, an anode target 321B, and a giant monochromator 321C. The high-energy electron gun 321A generates a high-energy electron current, the high-energy electron current bombards the anode target 321B, the anode target 321B generates fluorescent X-rays, and the giant monochromator 321C screens out the fluorescent X-rays with a specific waveband and focuses the fluorescent X-rays on the sample 40. The sample 40 is a reference sample when the measurement is performed using the second measurement assembly 32.
The magnetic spectrometer 322 is disposed below the sample 40, and is used for collecting the photoelectrons generated by the X-ray source 321.
The analyzer 323 can acquire the escaped photoelectrons and obtain the thickness of the thin film layer of the sample according to the photoelectron information, wherein the thickness of the thin film layer of the sample is the measurement result of the second measurement component. In this embodiment, the analyzer 323 is a hemisphere analyzer.
The comparison module 33 and the calibration module 34 may be integrated in a controller, the comparison module 33 may be a comparator, and the calibration module 34 may be an adder.
The comparison module 33 is configured to compare the measurement result of the first measurement component 31 with the measurement result of the second measurement component 32 to obtain a calibration parameter. When the measurement result of the first measurement component 31 is the first thickness of the reference sample, and the measurement result of the second measurement component 32 is the second thickness of the reference sample, the comparison module 33 compares the two measurement results to obtain the calibration parameter.
The calibration module 34 calibrates the measurement result of the first measurement component 31 with the calibration parameter. After obtaining the calibration parameter, the first measurement component 31 measures the sample to be measured to obtain a measurement result of the sample to be measured, and the calibration module 34 calibrates the measurement result of the sample to be measured by using the calibration parameter to obtain an accurate value of the thickness of the thin film layer of the sample to be measured.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A method for measuring the thickness of a thin film is characterized by comprising the following steps:
obtaining calibration parameters:
measuring the thickness of a thin film layer of a reference sample by adopting a first measuring method to obtain a first thickness of the thin film layer of the reference sample;
measuring the thickness of the thin film layer of the reference sample by adopting a second measuring method to obtain a second thickness of the thin film layer of the reference sample;
comparing the first thickness with the second thickness to obtain the calibration parameter;
obtaining the thickness of a thin film layer of a sample to be detected:
measuring the initial thickness of a thin film layer of a sample to be measured by adopting the first measuring method, wherein the sample to be measured and the reference sample are the same type of sample;
and calibrating the initial thickness by using the calibration parameters to obtain the thickness of the thin film layer of the sample to be measured.
2. The method of claim 1, wherein a plurality of measurement points are selected on the reference sample, and the step of obtaining the calibration parameter further comprises the steps of:
measuring the thickness of the thin film layer of the reference sample at a measuring point by adopting a first measuring method to obtain the first thickness of the thin film layer of the reference sample at the measuring point;
measuring the thickness of the thin film layer of the reference sample at the measuring point by adopting a second measuring method to obtain a second thickness of the thin film layer of the reference sample at the measuring point;
comparing the first thickness with the second thickness to obtain an initial parameter;
and normalizing the plurality of initial parameters to obtain the calibration parameters.
3. The method for measuring film thickness according to claim 2, wherein the sample to be measured and the reference sample have the same measurement point, and the step of obtaining the thickness of the thin film layer of the sample to be measured further comprises the steps of:
measuring the initial thickness of the thin film layer of the sample to be measured at a measuring point by adopting the first measuring method;
and calibrating the initial thickness by using the calibration parameters to obtain the thickness of the thin film layer of the sample to be measured at the measuring point.
4. The method according to claim 1, wherein the reference sample and the sample to be measured each include a plurality of thin film layers alternately arranged.
5. The method of claim 4, wherein the total thickness of the plurality of alternating thin film layers is less than 10 nm.
6. The method according to claim 1, wherein the reference sample and the sample to be measured each include a thin film layer having a thickness of less than 10 nm.
7. A method of measuring film thickness according to any of claims 1 to 6, wherein the first measurement method is ellipsometry and the second measurement method is X-ray photoelectron spectroscopy.
8. A measuring apparatus for implementing the measuring method according to any one of claims 1 to 7, comprising:
the device comprises a sample bearing table, a sample to be tested and a reference sample, wherein the reference sample and the sample to be tested can be placed on the sample bearing table;
a first measurement component capable of implementing a first measurement method;
a second measurement component capable of implementing a second measurement method;
the comparison module is used for comparing the measurement result of the first measurement assembly with the measurement result of the second measurement assembly to obtain a calibration parameter;
and the calibration module is used for calibrating the measurement result of the first measurement component by using the calibration parameter.
9. The measurement device of claim 8, wherein the first measurement method is ellipsometry, and the first measurement assembly comprises:
the light source is arranged above the sample bearing table and can generate linearly polarized light;
the detector can receive and detect the light intensity of the reflected light of the reference sample or the sample to be detected;
and the processor is electrically connected with the detector, receives the signal of the detector and converts the signal into the thickness of the thin film layer of the reference sample or the sample to be measured, wherein the thickness of the thin film layer of the reference sample or the sample to be measured is the measurement result of the first measurement component.
10. The measurement arrangement of claim 8, wherein the second measurement method is an X-ray photoelectron spectroscopy analysis method, the second measurement assembly comprising:
the X-ray source is arranged above the sample bearing table and can generate X-rays with a preset waveband;
the magnetic spectrometer is arranged below the reference sample and is used for converging photoelectrons generated by X rays;
the analyzer can acquire the photoelectrons and obtain the thickness of the thin film layer of the reference sample according to the photoelectron information, wherein the thickness of the thin film layer of the reference sample is the measurement result of the second measurement assembly.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113008170A (en) * | 2021-03-19 | 2021-06-22 | 长江存储科技有限责任公司 | Thickness measurement method and system |
| CN114739300A (en) * | 2022-03-29 | 2022-07-12 | 上海优睿谱半导体设备有限公司 | Method for measuring epitaxial layer thickness of epitaxial wafer |
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2019
- 2019-06-26 CN CN201910561172.9A patent/CN112146581A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113008170A (en) * | 2021-03-19 | 2021-06-22 | 长江存储科技有限责任公司 | Thickness measurement method and system |
| CN114739300A (en) * | 2022-03-29 | 2022-07-12 | 上海优睿谱半导体设备有限公司 | Method for measuring epitaxial layer thickness of epitaxial wafer |
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