CN112710244A - Method for monitoring thickness of optical filter film - Google Patents
Method for monitoring thickness of optical filter film Download PDFInfo
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- CN112710244A CN112710244A CN202011526862.XA CN202011526862A CN112710244A CN 112710244 A CN112710244 A CN 112710244A CN 202011526862 A CN202011526862 A CN 202011526862A CN 112710244 A CN112710244 A CN 112710244A
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- film
- thickness
- reference object
- spectral reflectance
- monitoring
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
Abstract
The invention discloses a method for monitoring the thickness of an optical filter film, which comprises the following steps: providing a color filter; covering a transparent organic film on the surface of a substrate of the color filter; measuring the film thickness on the reference object by ellipsometry; illuminating light to illuminate the reference object and the measuring object to obtain respective spectral intensities of reflected light from the reference object and the measuring object; calculating a spectral reflectance of a reference object based on the thickness of the thin film on the reference object, and obtaining a spectral reflectance of a measurement object with reference to the spectral reflectance of the reference object; the thickness of the thin film on the measurement object is obtained from the spectral reflectance of the measurement object. According to the invention, the detection equipment is simple; and the detection precision is high.
Description
Technical Field
The invention relates to the technical field of monitoring of the thickness of an optical filter film, in particular to a method for monitoring the thickness of the optical filter film.
Background
The optical filter is composed of a substrate and an optical film system vacuum-deposited on the substrate. In the case of depositing an optical film system, since the reflected light and the transmitted light change due to a change in the thickness of the film layer, it is most appropriate to control the change in the thickness of the film layer by using a change in the optical signal. The currently common methods for monitoring the thickness of the optical film include: visual method for directly observing the color change of the film; a wavelength modulation method for measuring a derivative change of the transmittance or reflectance with respect to a wavelength; extreme methods for measuring extreme changes in the transmittance or reflectance of a film.
The visual method is to control the thickness of the dielectric film by visually observing the change of the interference color of the thin film using human eyes as a receiver. The method is very convenient for plating a single-layer MgF2 antireflection film and is still widely applied to the present.
The wavelength modulation method is a method for measuring the derivative of reflectivity or transmissivity to wavelength, the derivative of a reflectivity curve is zero at an extreme point, the derivative changes rapidly from a positive value to a negative value under the condition of the maximum value, and the change is opposite under the condition of the minimum value, so that the method can accurately control the thickness of a film layer with a quarter wavelength or integral multiple of the quarter wavelength. But its monitoring system is complicated.
The extreme method is a method for controlling the thickness of the quarter-wavelength integral multiple optical film by monitoring the number of times of the occurrence of extreme points of the film in the evaporation process by using a photoelectric monitoring system.
There are three extreme methods, which are a direct control method, an indirect control method, and a semi-direct control method, respectively.
The direct control method comprises the following steps: the evaporation process of the film is controlled by the plated sample all the time without a control sheet. The control is carried out by adopting the plated sample, and the plated narrow-band filter has high precision. The method mainly comprises the steps of automatically compensating film layer errors (in the aspect of controlling the wavelength) between adjacent film layers, and avoiding errors caused by condensation characteristic changes, so that the narrow-band filter obtains high wavelength positioning accuracy. The disadvantages are that: when the film layer is plated to be thicker, the monitoring optical signal can be deformed; the error caused by the change of the state of the coating film can not be compensated conveniently.
An indirect control method: the thickness of the film is controlled by a monitoring sheet in the evaporation process, and the monitoring sheet can be provided with a plurality of sheets. The advantage is because the evaporation process of film carries on the coating film control on the multichip control chip successively, therefore can change different control wavelength, have avoided when the membranous layer is plated to thickly, the control optical signal takes place to warp. The disadvantage is that when the plated sample is deposited to a certain thickness, a new monitoring wafer is replaced, and the thickness of the film deposited on the plated sample and the film deposited on the new monitoring wafer at the same time are obviously different; the extreme value control precision of each film layer is low.
The semi-direct control method is between the two methods, the film thickness of the whole film coating process is directly controlled on the monitoring sheet plated with the pre-coating layer, and the control precision problem also exists.
Disclosure of Invention
The invention aims to provide a method for monitoring the thickness of an optical filter film, which aims to solve the problems in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme: a method for monitoring the thickness of an optical filter film comprises the following steps:
s1: providing a color filter;
s2: covering a transparent organic film on the surface of a substrate of the color filter;
s3: measuring the film thickness on the reference object by ellipsometry;
s4: illuminating light to illuminate the reference object and the measuring object to obtain respective spectral intensities of reflected light from the reference object and the measuring object;
s5: calculating a spectral reflectance of a reference object based on the thickness of the thin film on the reference object, and obtaining a spectral reflectance of a measurement object with reference to the spectral reflectance of the reference object;
s6: the thickness of the thin film on the measurement object is obtained from the spectral reflectance of the measurement object.
Preferably, the method for indirectly monitoring the extreme value of the film in step S2 plates the optical film on the substrate.
Compared with the prior art, the invention has the beneficial effects that: providing a color filter; covering a transparent organic film on the surface of a substrate of the color filter; measuring the film thickness on the reference object by ellipsometry; illuminating light to illuminate the reference object and the measuring object to obtain respective spectral intensities of reflected light from the reference object and the measuring object; calculating a spectral reflectance of a reference object based on the thickness of the thin film on the reference object, and obtaining a spectral reflectance of a measurement object with reference to the spectral reflectance of the reference object; obtaining the thickness of a thin film on the measurement object according to the spectral reflectance of the measurement object; the detection equipment is simple; and the detection precision is high.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a flow chart of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Referring to fig. 1, in an embodiment of the present invention, a method for monitoring a thickness of an optical filter film includes the following steps:
s1: providing a color filter;
s2: covering a transparent organic film on the surface of a substrate of the color filter;
s3: measuring the film thickness on the reference object by ellipsometry;
s4: illuminating light to illuminate the reference object and the measuring object to obtain respective spectral intensities of reflected light from the reference object and the measuring object;
s5: calculating a spectral reflectance of a reference object based on the thickness of the thin film on the reference object, and obtaining a spectral reflectance of a measurement object with reference to the spectral reflectance of the reference object;
s6: the thickness of the thin film on the measurement object is obtained from the spectral reflectance of the measurement object.
Preferably, the method for indirectly monitoring the extreme value of the film in step S2 plates the optical film on the substrate.
The working principle of the invention is as follows: providing a color filter; covering a transparent organic film on the surface of a substrate of the color filter; measuring the film thickness on the reference object by ellipsometry; illuminating light to illuminate the reference object and the measuring object to obtain respective spectral intensities of reflected light from the reference object and the measuring object; calculating a spectral reflectance of a reference object based on the thickness of the thin film on the reference object, and obtaining a spectral reflectance of a measurement object with reference to the spectral reflectance of the reference object; obtaining the thickness of a thin film on the measurement object according to the spectral reflectance of the measurement object; the detection equipment is simple; and the detection precision is high.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (2)
1. A method for monitoring the thickness of an optical filter film is characterized in that: the method comprises the following steps:
s1: providing a color filter;
s2: covering a transparent organic film on the surface of a substrate of the color filter;
s3: measuring the film thickness on the reference object by ellipsometry;
s4: illuminating light to illuminate the reference object and the measuring object to obtain respective spectral intensities of reflected light from the reference object and the measuring object;
s5: calculating a spectral reflectance of a reference object based on the thickness of the thin film on the reference object, and obtaining a spectral reflectance of a measurement object with reference to the spectral reflectance of the reference object;
s6: the thickness of the thin film on the measurement object is obtained from the spectral reflectance of the measurement object.
2. The method for monitoring the thickness of an optical filter film as claimed in claim 1, wherein: the method for indirectly monitoring the film extremum in the step S2 plates the optical film on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011526862.XA CN112710244A (en) | 2020-12-22 | 2020-12-22 | Method for monitoring thickness of optical filter film |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011526862.XA CN112710244A (en) | 2020-12-22 | 2020-12-22 | Method for monitoring thickness of optical filter film |
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| CN112710244A true CN112710244A (en) | 2021-04-27 |
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| CN202011526862.XA Pending CN112710244A (en) | 2020-12-22 | 2020-12-22 | Method for monitoring thickness of optical filter film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114739300A (en) * | 2022-03-29 | 2022-07-12 | 上海优睿谱半导体设备有限公司 | Method for measuring epitaxial layer thickness of epitaxial wafer |
Citations (5)
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| US20040075836A1 (en) * | 2002-10-18 | 2004-04-22 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for measuring film thickness formed on object, apparatus and method of measuring spectral reflectance of object, and apparatus and method of inspecting foreign material on object |
| US6970236B1 (en) * | 2002-08-19 | 2005-11-29 | Jds Uniphase Corporation | Methods and systems for verification of interference devices |
| CN1862297A (en) * | 2006-06-08 | 2006-11-15 | 上海欧菲尔光电技术有限公司 | Method for monitoring film thickness of optical filter |
| EP3598060A1 (en) * | 2017-05-26 | 2020-01-22 | Konica Minolta, Inc. | Measurement device |
| CN111505755A (en) * | 2020-05-26 | 2020-08-07 | 苏州京浜光电科技股份有限公司 | High-toughness resin optical filter and preparation method thereof |
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2020
- 2020-12-22 CN CN202011526862.XA patent/CN112710244A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6970236B1 (en) * | 2002-08-19 | 2005-11-29 | Jds Uniphase Corporation | Methods and systems for verification of interference devices |
| US20040075836A1 (en) * | 2002-10-18 | 2004-04-22 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for measuring film thickness formed on object, apparatus and method of measuring spectral reflectance of object, and apparatus and method of inspecting foreign material on object |
| CN1502969A (en) * | 2002-10-18 | 2004-06-09 | ���ձ���Ŀ��������ʽ���� | Apparatus for measuring film thickness formed on object, apparatus and method for measuring spectral reflectance of object, and apparatus and method of inspecting foreign material on object |
| CN1862297A (en) * | 2006-06-08 | 2006-11-15 | 上海欧菲尔光电技术有限公司 | Method for monitoring film thickness of optical filter |
| EP3598060A1 (en) * | 2017-05-26 | 2020-01-22 | Konica Minolta, Inc. | Measurement device |
| CN111505755A (en) * | 2020-05-26 | 2020-08-07 | 苏州京浜光电科技股份有限公司 | High-toughness resin optical filter and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114739300A (en) * | 2022-03-29 | 2022-07-12 | 上海优睿谱半导体设备有限公司 | Method for measuring epitaxial layer thickness of epitaxial wafer |
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Application publication date: 20210427 |
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