CN117207056B - High-precision wafer laser thickness measuring device and method - Google Patents
High-precision wafer laser thickness measuring device and method Download PDFInfo
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- CN117207056B CN117207056B CN202311466150.7A CN202311466150A CN117207056B CN 117207056 B CN117207056 B CN 117207056B CN 202311466150 A CN202311466150 A CN 202311466150A CN 117207056 B CN117207056 B CN 117207056B
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000005498 polishing Methods 0.000 claims abstract description 93
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000013078 crystal Substances 0.000 claims abstract description 40
- 238000012545 processing Methods 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims description 33
- 238000005259 measurement Methods 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 12
- 239000008213 purified water Substances 0.000 claims description 4
- 230000003028 elevating effect Effects 0.000 claims 2
- 238000009434 installation Methods 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 11
- 235000012431 wafers Nutrition 0.000 description 54
- 239000002245 particle Substances 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
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- 230000001105 regulatory effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
The invention discloses a high-precision wafer laser thickness measuring device and a high-precision wafer laser thickness measuring method, wherein the high-precision wafer laser thickness measuring device comprises a processing table and a polishing thickness measuring mechanism, a rotary disk seat is arranged on the table surface of the processing table, a lifting device is arranged on the side surface of the processing table, the polishing thickness measuring mechanism is arranged at the lower end of the lifting device, the polishing thickness measuring mechanism comprises a rotary driver and a thickness measuring device, a shell is arranged at the output end of the rotary driver, the center of the shell is fixed with the upper end of a middle shaft rod, a polishing disk I is arranged at the lower end of the middle shaft rod, and a thickness measuring hole is formed in the polishing disk I; the thickness measuring device comprises a rotating mechanism arranged on the middle shaft rod, a polishing compensation device, a crystal face water absorption device and a laser thickness measuring device which are circumferentially arranged are arranged on the rotating mechanism, and the rotating mechanism can control the polishing compensation device, the crystal face water absorption device or the laser thickness measuring device to be matched with or separated from the thickness measuring hole.
Description
Technical Field
The invention relates to the technical field of wafer grinding and polishing, in particular to a high-precision wafer laser thickness measuring device and method.
Background
Chemical-mechanical polishing (Chemical-Mechanical Polishing, CMP), also known as Chemical-Mechanical Planariza ion, CMP, was originally used to obtain high quality glass surfaces, such as military telescopes. CMP technology is increasingly being applied to semiconductor device fabrication, and is currently being commonly used to polish base material silicon wafers In integrated circuits (in+.5 egra+.ed circuit+.ic) and ultra large scale integration (ul+. ra Large Scale In +.5.g. ] ion, ULSI) circuits, i.e., to planarize wafers or silicon wafers or other substrate materials being processed.
In the polishing process, it is important to know the thickness of a processed wafer in real time, and in the conventional measurement mode, there is a contact thickness measurement method in which a measurement probe is brought into contact with the back surface of a wafer as a surface to be processed to measure, or a non-contact thickness measurement method in which the upper surface of the wafer is irradiated with laser light, reflected light from the front surface and the back surface of the wafer is received, and the waveform of interference waves is analyzed to measure.
In the case of irradiating a wafer subjected to doping treatment with laser light or the like to measure the thickness of the wafer in a noncontact manner. The following problems often exist in the current wafer thickness measurement process:
1. when the upper surface of the wafer is measured in a completely dry state, the interference intensity of reflected light from the upper and lower surfaces is weak, and it is difficult to accurately measure the thickness of the wafer.
2. In the polishing and grinding process of wafers, processing water, namely polishing solution, is generally added, and the processing water contains grinding particles and grinding scraps generated by processing, and the particles can influence light interference when passing through laser, so that the measurement accuracy is reduced.
3. In some cases, the measurement is performed while supplying the machining water during the grinding process, which may cause a greater influence on the interference of the laser light and affect the measurement data.
Therefore, there is a need for a high-precision wafer laser thickness measuring device and method to solve the above-mentioned problems in the prior art.
Disclosure of Invention
In order to achieve the above purpose, the present invention provides the following technical solutions: the high-precision wafer laser thickness measuring device comprises a processing table and a polishing thickness measuring mechanism, wherein a rotary disk seat is arranged on the table surface of the processing table, a lifting device is arranged on the side surface of the processing table, the polishing thickness measuring mechanism is arranged at the lower end of the lifting device, the polishing thickness measuring mechanism comprises a rotary driver and a thickness measuring device, the output end of the rotary driver is provided with a shell, the center of the shell is fixed with the upper end of a middle shaft rod, a polishing disk I is arranged at the lower end of the middle shaft rod, and a thickness measuring hole is formed in the polishing disk I;
the thickness measuring device comprises a rotating mechanism arranged on the middle shaft rod, a polishing compensation device, a crystal face water absorption device and a laser thickness measuring device which are circumferentially arranged are arranged on the rotating mechanism, and the rotating mechanism can control the polishing compensation device, the crystal face water absorption device or the laser thickness measuring device to be matched with or separated from the thickness measuring hole.
Further, the polishing compensation device comprises a first lifter and a first inverted-T-shaped shell column, wherein a first shell cover is installed at the output end of the first lifter, the upper end of the first inverted-T-shaped shell column is assembled with the first center of the first shell cover in a rotating mode, a second polishing disc is installed at the lower end of the first inverted-T-shaped shell column, and a rotating system capable of controlling the first inverted-T-shaped shell column to rotate is installed on the first shell cover.
Further, a first supply tank is arranged on the first shell cover, polishing liquid is stored in the first supply tank, an annular housing cover is coaxially arranged on the outer side of the first T-shaped shell column in a rotating mode, an inner cavity of the annular housing cover is respectively communicated with an inner cavity of the first T-shaped shell column and the first supply tank, and a leak hole is formed in one end, close to the upper disc face of the second polishing disc, of the first T-shaped shell column.
Furthermore, the second upper disc surface of the polishing disc is in a conical surface structure.
Further, the crystal face water absorbing device comprises a second lifter and a second T-shaped shell column, a second shell cover is arranged at the output end of the second lifter, the upper end of the second T-shaped shell column is assembled with the center of the second shell cover in a rotating mode, a water absorbing cleaning disc is arranged at the lower end of the second T-shaped shell column, and a second rotating system capable of controlling the second T-shaped shell column to rotate is arranged on the second shell cover.
Further, the water-absorbing cleaning disc comprises a shell supporting cover arranged at the lower end of the inverted-T-shaped shell column, a ring disc cover is fixedly sleeved at the upper end of the shell supporting cover, radial strips which are circumferentially arranged are distributed on the lower cover surface of the ring disc cover, a cleaning sleeve is sleeved outside the radial strips, and cleaning sheets are sleeved on the lower end surface of the shell supporting cover.
Further, the cleaning sleeve and the cleaning sheet are of an air-permeable structure, a dryer is arranged on the second shell cover, a first through hole is formed in the side wall of the second T-shaped shell column below the annular disc cover, a second through hole is formed in the lower end face of the second T-shaped shell column, a second annular shell cover is coaxially arranged on the outer side of the second T-shaped shell column in a rotating mode, and an inner cavity of the second annular shell cover is communicated with an inner cavity of the second T-shaped shell column and the dryer respectively.
Further, the laser thickness measuring device comprises a third lifter and a third rotating system, a third lifter output end is provided with a third shell cover, a laser thickness measuring head is arranged in the third center of the third shell cover, a second supply tank is further arranged on the third shell cover, purified water is stored in the second supply tank, a water film laying enclosing ring which is coaxially arranged with the laser thickness measuring head is arranged at the second supply tank output end, an annular cavity which is communicated with the second supply tank is arranged at the upper end of the water film laying enclosing ring, a third through hole which is circumferentially distributed is arranged at the lower end of the water film laying enclosing ring, the third through hole is communicated with the annular cavity, and the third rotating system is arranged on the rotating mechanism and can regulate and control the third lifter to rotate.
Furthermore, the lower end of the water film laying surrounding ring is provided with an inverted conical surface structure, and the inverted conical surface is sleeved with a hydrophilic film sleeve.
A thickness measuring method of a high-precision wafer laser thickness measuring device comprises the following steps:
s1: the polishing compensation device is controlled by the rotating mechanism to be matched with the thickness measuring hole;
s2: the lifting device and the rotary driver control the polishing disk I to be matched with the polishing compensation device to polish and grind the wafer on the rotary disk seat;
s3: the rotation mechanism is used for controlling the polishing compensation device to be separated from the thickness measuring hole, controlling the crystal face water absorbing device to be matched with the thickness measuring hole, and carrying out water absorbing treatment on the crystal face of the wafer;
s4: and the crystal face water absorption device is controlled to be separated from the thickness measuring hole by the rotating mechanism, and the laser thickness measuring device is controlled to be matched with the thickness measuring hole to measure the thickness of the wafer.
Compared with the prior art, the invention provides a high-precision wafer laser thickness measuring device and a method, which have the following beneficial effects:
1. according to the invention, in the polishing process, the first polishing disk and the second polishing disk are combined, the second polishing disk and the first polishing disk are regulated and controlled to be combined under the regulation and control of the rotating mechanism, so that the wafer can be polished and ground, the second polishing disk and the first polishing disk are regulated and controlled to be separated to form the thickness measuring hole, and the thickness of the wafer can be measured through the laser thickness measuring device, so that the thickness of the wafer can be measured on line, the wafer can be measured without being removed from the polishing table, and the wafer can be processed more efficiently.
2. According to the invention, through the specific structural design of the crystal face water absorption device, before the thickness measurement of the wafer by the laser thickness measuring head, the position of the wafer, which is required to be measured in thickness, is subjected to water absorption treatment by the crystal face water absorption device, so that particles such as polishing liquid, grinding particles and abrasive dust on a crystal face are removed, interference to laser is avoided, and the accuracy of measuring the thickness of the wafer is further improved; and then, hot air flow is filled into the second inverted-T shell column through a dryer, and crystal faces at the position are dried, so that a clean and smooth crystal face is provided for measurement by a laser thickness measuring device, and further, the measurement of the thickness of the wafer is more accurate.
Drawings
FIG. 1 is a schematic view of a wafer processing structure according to the present invention;
FIG. 2 is a schematic diagram of a polishing thickness measuring mechanism according to the present invention;
fig. 3 is a schematic view of a polishing disc according to the present invention;
FIG. 4 is a schematic view of the internal structure of the polishing thickness measuring mechanism of the present invention;
FIG. 5 is a schematic view of the polishing compensation device of the present invention;
FIG. 6 is a schematic cross-sectional view of a polishing compensation device of the present invention;
FIG. 7 is a schematic diagram of a crystal plane water absorbing device according to the present invention;
FIG. 8 is a schematic diagram showing a cross-sectional structure of a crystal plane water absorbing apparatus of the present invention;
FIG. 9 is a schematic diagram of a laser thickness measuring device according to the present invention;
FIG. 10 is a schematic cross-sectional view of a laser thickness measuring device of the present invention;
in the figure: 1. a processing table; 2. a lifting device; 3. polishing thickness measuring mechanism; 4. a rotary disk seat; 5. a rotary driver; 51. a housing; 52. a middle shaft lever; 53. polishing disk I; 54. a thickness measuring hole; 6. a thickness measuring device; 61. a rotation mechanism; 7. a polishing compensation device; 8. a crystal face water absorbing device; 9. a laser thickness measuring device; 71. a lifter I; 72. a first shell cover; 73. t-shaped shell column I; 74. a leak hole; 75. polishing disc II; 76. the rotating system is one; 77. a first ring shell; 78. a first supply tank; 81. a lifter II; 82. a second shell cover; 83. t-shaped shell column II; 84. a first through hole; 85. a water-absorbing cleaning plate; 86. rotating a second system; 851. a shell cover; 852. a ring plate cover; 853. a radial slat; 854. a cleaning sleeve; 855. a cleaning sheet; 856. a second through hole; 857. a second annular shell cover; 858. a dryer; 91. a lifter III; 92. a third shell cover; 93. a laser thickness measuring head; 94. a second supply tank; 95. paving a water film surrounding ring; 96. rotating a system III; 951. a ring cavity; 952. a third through hole; 953. hydrophilic membrane sleeve.
Detailed Description
Referring to fig. 1-10, the present invention provides a technical solution: the high-precision wafer laser thickness measuring device comprises a processing table 1 and a polishing thickness measuring mechanism 3, wherein a rotary disc seat 4 is arranged on the table surface of the processing table 1, a lifting device 2 is arranged on the side surface of the processing table 1, a polishing thickness measuring mechanism 3 is arranged at the lower end of the lifting device 2, the polishing thickness measuring mechanism 3 comprises a rotary driver 5 and a thickness measuring device 6, a shell 51 is arranged at the output end of the rotary driver 5, the center of the shell 51 is fixed with the upper end of a middle shaft rod 52, a polishing disc I53 is arranged at the lower end of the middle shaft rod 52, and a thickness measuring hole 54 is formed in the polishing disc I53;
the thickness measuring device 6 comprises a rotating mechanism 61 arranged on the middle shaft rod 52, a polishing compensation device 7, a crystal face water absorbing device 8 and a laser thickness measuring device 9 which are circumferentially arranged are arranged on the rotating mechanism 61, and the rotating mechanism 61 can control the polishing compensation device 7, the crystal face water absorbing device 8 or the laser thickness measuring device 9 to be matched with or separated from the thickness measuring hole 54 so as to perform on-line thickness measuring treatment on a wafer;
wherein the lifting device 2 can also be controlled to move transversely so as to perform full polishing grinding on the wafer and measurement of different positions of the wafer.
In this embodiment, the polishing compensation device 7 includes a first lifter 71 and a first t-shaped shell column 73, wherein a first cover 72 is installed at an output end of the first lifter 71, an upper end of the first t-shaped shell column 73 is rotatably assembled with a center of the first cover 72, a second polishing disk 75 is installed at a lower end of the first t-shaped shell column 73, and a rotating system 76 capable of controlling the first t-shaped shell column 73 to rotate is installed on the first cover 72; that is, when the wafer polishing and grinding process is performed, the second polishing platen and the first polishing platen are combined to polish and grind the wafer.
The first shell cover 72 is provided with a first supply tank 78, polishing liquid is stored in the first supply tank 78, an annular shell cover 77 is coaxially and rotatably assembled on the outer side of the first T-shaped shell column 73, the inner cavity of the annular shell cover 77 is respectively communicated with the inner cavity of the first T-shaped shell column 73 and the first supply tank 78, and a leak hole 74 is formed in one end, close to the upper disc surface of the second polishing disc 75, of the first T-shaped shell column 73; that is, when the first supply tank is used for supplying a small amount of polishing liquid in the polishing and grinding process of the wafer, the polishing liquid on the second polishing disk can continuously and fully infiltrate downwards in the gap between the second polishing disk and the thickness measuring hole from top to bottom, so that the polishing liquid on the crystal face of the wafer is prevented from being accumulated in the gap, the polishing liquid is distributed on the surface of the wafer, and the timely replenishment of the polishing liquid of the wafer is more accurate.
Wherein, the upper disc surface of the second polishing disc 75 is in a conical surface structure, which is beneficial to the downstream flow of the polishing solution.
The crystal face water absorbing device 8 comprises a second lifter 81 and a second inverted-T-shaped shell column 83, wherein a second shell cover 82 is installed at the output end of the second lifter 81, the upper end of the second inverted-T-shaped shell column 83 is assembled with the center of the second shell cover 82 in a rotating mode, a water absorbing cleaning disc 85 is installed at the lower end of the second inverted-T-shaped shell column 83, and a second rotating system 86 capable of controlling the second inverted-T-shaped shell column 83 to rotate is installed on the second shell cover 82; that is, before the laser thickness measuring head measures the thickness of the wafer, the wafer is subjected to water absorption treatment at the position required to measure the thickness by the crystal face water absorption device, so that polishing liquid on the crystal face is removed, interference influence of grinding particles, abrasive dust and other particles in the polishing liquid on irradiation light and reflected light of the laser thickness measuring head is avoided, and the accuracy of measuring the thickness of the wafer is further improved;
the water-absorbing cleaning disc 85 comprises a shell supporting cover 851 arranged at the lower end of the second inverted-T shell column 83, a ring disc cover 852 is fixedly sleeved at the upper end of the shell supporting cover 851, radial strips 853 which are circumferentially arranged are distributed on the lower cover surface of the ring disc cover 852, a cleaning sleeve 854 is sleeved outside the radial strips 853, and cleaning sheets 855 are sleeved on the lower end surface of the shell supporting cover 851;
the cleaning sleeve 854 and the cleaning sheet 855 are in an air-permeable structure, the second shell cover 82 is provided with a dryer 858, the side wall of the second inverted-T-shaped shell column 83 positioned below the annular disc cover 852 is provided with a first through hole 84, the lower end surface of the second inverted-T-shaped shell column 83 is provided with a second through hole 856, the outer side of the second inverted-T-shaped shell column 83 is coaxially and rotatably provided with a second annular shell cover 857, and the inner cavity of the second annular shell cover 857 is respectively communicated with the inner cavity of the second inverted-T-shaped shell column 83 and the dryer 858; that is, after the water absorption treatment is completed on the position of the wafer, hot air flow is filled into the second inverted T-shaped shell column through the dryer, the crystal face at the position is dried, specifically, the hot air flow can diffuse outwards through the through holes, the space between the cleaning sleeves is dried, and the cleaning sheets can be blown up to slightly bulge downwards through the diffusion outwards through the through holes, so that when the crystal face absorbs water, the center of the cleaning sheets gradually contacts with the cleaning crystal face from the outer diameter of the cleaning sheets, and then particles such as grinding particles, abrasive dust and the like in polishing liquid on the crystal face can be rapidly and smoothly treated under the action of the cleaning sleeve, and a clean and smooth crystal face is provided for the thickness measuring device to measure;
in addition, through the effect of the dryer, the cleaning sleeve and the cleaning sheet can be dried before being used, so that the cleaning sleeve and the cleaning sheet have higher water absorbability when required to absorb water, and the efficiency of cleaning crystal faces and the cleaning and drying effects are further improved.
In this embodiment, the laser thickness measuring device 9 includes a third lifter 91 and a third rotation system 96, the output end of the third lifter 91 is provided with a third cover 92, the center of the third cover 92 is provided with a laser thickness measuring head 93, the third cover 92 is also provided with a second supply tank 94, purified water is stored in the second supply tank 94, the output end of the second supply tank 94 is provided with a water film laying enclosure ring 95 coaxially arranged with the laser thickness measuring head 93, the upper end of the water film laying enclosure ring 95 is provided with an annular cavity 951 communicated with the second supply tank 94, the lower end of the water film laying enclosure ring 95 is provided with a through hole three 952 distributed circumferentially, the through hole three 952 is communicated with the annular cavity 951, and the third rotation system 91 is installed on the rotation mechanism 61 and can regulate and control the rotation of the third lifter 91; the lower end of the water film laying enclosing ring 95 is provided with an inverted conical surface structure, a hydrophilic film sleeve 953 is sleeved outside the inverted conical surface, and the surface of the hydrophilic film sleeve is provided with a water permeable hole structure; that is, after the crystal face is cleaned and dried, the water film is regulated and controlled to be paved and the surrounding ring is attached to the crystal face, a certain amount of purified water is gradually supplied to the second supply tank, so that the crystal face is covered with the water film with uniform thickness, and the measurement stability and measurement precision of the laser thickness measuring head are improved; through the cooperation of hydrophilic film cover and rotation system III, can make the pure water lay the flow in the ring to the water film and gush out more comprehensive steady, avoid having the bubble in the water film that forms, influence laser thickness measuring head to the measurement of wafer thickness.
In specific implementation, the method comprises the following steps:
s1: the polishing compensation device 7 is controlled to be matched with the thickness measuring hole 54 through the rotating mechanism 61;
s2: the lifting device 2 and the rotary driver 5 control the first polishing disk 53 to be matched with the polishing compensation device 7 to polish and grind the wafer on the rotary disk seat 4;
s3: the rotation mechanism 61 controls the polishing compensation device 7 to be separated from the thickness measuring hole 54, and controls the crystal face water absorbing device 8 to be matched with the thickness measuring hole 54 so as to absorb water on the crystal face of the wafer;
s4: the crystal face water absorbing device 8 is controlled to be separated from the thickness measuring hole 54 through the rotating mechanism 61, and the laser thickness measuring device 9 is controlled to be matched with the thickness measuring hole 54, so that the thickness of the wafer is measured.
In addition, when the thickness of the measured wafer does not reach the standard, S1 is carried out again, then the wafer is polished and ground, and S2-S4 are carried out until the thickness of the polished and ground wafer reaches the standard.
The above description is only of the preferred embodiments of the invention, but the protection scope of the invention is not limited thereto, and any person skilled in the art who is skilled in the art to which the invention pertains should make equivalent substitutions or modifications according to the technical solution of the invention and its inventive concept within the scope of the invention.
Claims (4)
1. The utility model provides a high accuracy wafer laser thickness measuring device, includes processing platform (1), polishing thickness measuring mechanism (3), processing platform (1) mesa is equipped with rotary disk seat (4), and processing platform (1) side is equipped with elevating gear (2), and polishing thickness measuring mechanism (3) are installed to elevating gear (2) lower extreme, characterized in that, polishing thickness measuring mechanism (3) include rotary actuator (5), thickness measuring device (6), rotary actuator (5) output installation shell (51), shell (51) center is fixed with well axostylus axostyle (52) upper end, and well axostylus axostyle (52) lower extreme is installed polishing dish one (53), just offer thickness measuring hole (54) on polishing dish one (53);
the thickness measuring device (6) comprises a rotating mechanism (61) arranged on the middle shaft rod (52), a polishing compensation device (7), a crystal face water absorbing device (8) and a laser thickness measuring device (9) which are circumferentially arranged are arranged on the rotating mechanism (61), and the rotating mechanism (61) can control the polishing compensation device (7), the crystal face water absorbing device (8) or the laser thickness measuring device (9) to be matched with or separated from the thickness measuring hole (54);
the polishing compensation device (7) comprises a first lifter (71) and a first inverted-T-shaped shell column (73), wherein a first shell cover (72) is arranged at the output end of the first lifter (71), the upper end of the first inverted-T-shaped shell column (73) is assembled with the center of the first shell cover (72) in a rotating mode, a second polishing disc (75) is arranged at the lower end of the first inverted-T-shaped shell column (73), and a rotating system (76) capable of controlling the rotation of the first inverted-T-shaped shell column (73) is arranged on the first shell cover (72);
a first supply tank (78) is arranged on the first shell cover (72), polishing liquid is stored in the first supply tank (78), a first annular shell cover (77) is coaxially and rotatably arranged on the outer side of the first inverted-T-shaped shell column (73), the inner cavity of the first annular shell cover (77) is respectively communicated with the inner cavity of the first inverted-T-shaped shell column (73) and the first supply tank (78), and a leak hole (74) is formed in one end, close to the upper disc surface of the second polishing disc (75), of the first inverted-T-shaped shell column (73);
the crystal face water absorbing device (8) comprises a second lifter (81) and a second inverted-T-shaped shell column (83), wherein a second shell cover (82) is arranged at the output end of the second lifter (81), the upper end of the second inverted-T-shaped shell column (83) is assembled with the center of the second shell cover (82) in a rotating mode, a water absorbing cleaning disc (85) is arranged at the lower end of the second inverted-T-shaped shell column (83), and a second rotating system (86) capable of controlling the second inverted-T-shaped shell column (83) to rotate is arranged on the second shell cover (82);
the water-absorbing cleaning disc (85) comprises a shell supporting cover (851) arranged at the lower end of the inverted-T-shaped shell column II (83), a ring disc cover (852) is fixedly sleeved at the upper end of the shell supporting cover (851), radial strips (853) which are circumferentially arranged are distributed on the lower cover surface of the ring disc cover (852), a cleaning sleeve (854) is sleeved outside the radial strips (853), and cleaning sheets (855) are sleeved on the lower end surface of the shell supporting cover (851);
the cleaning sleeve (854) and the cleaning sheet (855) are of an air-permeable structure, a dryer (858) is arranged on the second shell cover (82), a first through hole (84) is formed in the side wall of the second T-shaped shell column (83) below the annular disc cover (852), a second through hole (856) is formed in the lower end face of the second T-shaped shell column (83), a second annular shell cover (857) is coaxially and rotatably arranged on the outer side of the second T-shaped shell column (83), and the inner cavity of the second annular shell cover (857) is respectively communicated with the inner cavity of the second T-shaped shell column (83) and the dryer (858);
the laser thickness measuring device (9) comprises a lifter III (91) and a rotating system III (96), wherein a shell cover III (92) is arranged at the output end of the lifter III (91), a laser thickness measuring head (93) is arranged at the center of the shell cover III (92), a supply tank II (94) is further arranged on the shell cover III (92), purified water is stored in the supply tank II (94), a water film laying enclosing ring (95) coaxially arranged with the laser thickness measuring head (93) is arranged at the output end of the supply tank II (94), a ring cavity (951) communicated with the supply tank II (94) is arranged at the upper end of the water film laying enclosing ring (95), through holes III (952) distributed circumferentially are formed at the lower end of the water film laying enclosing ring (95), the through holes III (952) are communicated with the ring cavity (951), and the rotating system III (96) is arranged on a rotating mechanism (61) and can regulate and control the lifter III (91) to rotate.
2. A high precision wafer laser thickness measuring apparatus as claimed in claim 1, wherein the upper disk surface of the second polishing disk (75) has a conical surface structure.
3. The high-precision wafer laser thickness measuring device according to claim 1, wherein the lower end of the water film laying surrounding ring (95) is provided with an inverted conical surface structure, and the inverted conical surface is sleeved with a hydrophilic film sleeve (953).
4. A method of thickness measurement for a high precision wafer laser thickness measurement apparatus according to any one of claims 1 to 3, comprising the steps of:
s1: the polishing compensation device (7) is controlled to be matched with the thickness measuring hole (54) through the rotating mechanism (61);
s2: the lifting device (2) and the rotary driver (5) control the first polishing disk (53) to be matched with the polishing compensation device (7) to polish and grind the wafer on the rotary disk seat (4);
s3: the polishing compensation device (7) is controlled to be separated from the thickness measuring hole (54) through the rotating mechanism (61), and the crystal face water absorbing device (8) is controlled to be matched with the thickness measuring hole (54) so as to absorb water to the crystal face of the wafer;
s4: the crystal face water absorbing device (8) is controlled to be separated from the thickness measuring hole (54) through the rotating mechanism (61), and the laser thickness measuring device (9) is controlled to be matched with the thickness measuring hole (54) so as to measure the thickness of the wafer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311466150.7A CN117207056B (en) | 2023-11-07 | 2023-11-07 | High-precision wafer laser thickness measuring device and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311466150.7A CN117207056B (en) | 2023-11-07 | 2023-11-07 | High-precision wafer laser thickness measuring device and method |
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| CN117207056A CN117207056A (en) | 2023-12-12 |
| CN117207056B true CN117207056B (en) | 2024-01-23 |
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| CN1554118A (en) * | 2001-06-19 | 2004-12-08 | Ӧ�ò��Ϲ�˾ | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
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| JP7103906B2 (en) * | 2018-09-28 | 2022-07-20 | 株式会社ディスコ | Thickness measuring device |
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