JPH04201178A - Polishing device and polishing method - Google Patents

Polishing device and polishing method

Info

Publication number
JPH04201178A
JPH04201178A JP2329538A JP32953890A JPH04201178A JP H04201178 A JPH04201178 A JP H04201178A JP 2329538 A JP2329538 A JP 2329538A JP 32953890 A JP32953890 A JP 32953890A JP H04201178 A JPH04201178 A JP H04201178A
Authority
JP
Japan
Prior art keywords
polishing
workpiece
spindle shaft
rotary table
surface plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2329538A
Other languages
Japanese (ja)
Other versions
JP3007678B2 (en
Inventor
Kazuo Kobayashi
一雄 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibayama Kikai Co Ltd
Original Assignee
Shibayama Kikai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibayama Kikai Co Ltd filed Critical Shibayama Kikai Co Ltd
Priority to JP2329538A priority Critical patent/JP3007678B2/en
Publication of JPH04201178A publication Critical patent/JPH04201178A/en
Application granted granted Critical
Publication of JP3007678B2 publication Critical patent/JP3007678B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To prevent choking of an upper level block for polishing with a time and to maintain a polishing work at a stable state for a long time by polishing a work in a plane after the protrusion surface or the recessed surface of the work is polished once. CONSTITUTION:By inclining a spindle shaft 4 by means of a holding mechanism, an upper level block 3 is brought into a non-parallel state to a lower level block 1, the outer peripheral side of a work W is brought into an angle of elevation state to apply polishing on a protrusion surface. After the central side of the work W is brought into an angle of elevation state, the outer peripheral side of the work W is brought into an angle of elevation state, and polishing is applied on a recessed surface, a spindle shaft is held in a vertical state by means of a holding mechanism, the upper and lower level block 3 and 1 are brought into a state to parallel each other, and polishing is applied to the work W to form a plane.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、主として、シリコン半導体ウェハののワーク
のポリッシング装置とそのポリツシング方法に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention mainly relates to a polishing apparatus for a silicon semiconductor wafer workpiece and a polishing method thereof.

〔従来の技術とその問題点〕[Conventional technology and its problems]

一般にシリコン等の半導体ウェハは、先ず、シリコン結
晶体を一定の厚さにスライシングし、そのスライシング
したウェハを更に所望の厚さにするために研削加工を行
っている。
In general, semiconductor wafers such as silicon are produced by first slicing a silicon crystal to a certain thickness, and then grinding the sliced wafer to obtain a desired thickness.

通常、研削加工はカップ型砥石によって粗研削、中研削
、仕上研削等に分けて行われており、特に、近年では、
半導体ウェハを自転させながら研削を行い、研削効率を
高めているが、昨今要求される半導体ウェハは高精度の
平坦精度と鏡面加工であり、従来のようなカップ型砥石
で研削するだけでは、半導体ウェハに研削によるダメー
ジが残り求められる平坦精度は不可能と成っている。
Normally, grinding is performed using a cup-shaped grindstone, divided into rough grinding, medium grinding, finish grinding, etc. In recent years, in particular,
Grinding is carried out while rotating the semiconductor wafer, increasing grinding efficiency. However, semiconductor wafers require high-precision flatness and mirror finishing these days, and grinding with a conventional cup-shaped grindstone is not enough. Damage from grinding remains on the wafer, making it impossible to achieve the required flatness accuracy.

又、ポリッシング装置においても加工されるワークの外
周辺と中心辺との回転速度と加工する上方定盤の外周辺
と中心辺との回転速度の相違、つまり、ポリッシングさ
れている接触位置の周速度の相違から経時の使用では平
坦精度に問題をきたしており、更に、平面のみのポリッ
シングの場合にはコンパウンドの供給に問題があり、更
に、上方定盤に目詰りを起こしポリッシング加工の能率
が低下していた。
Also, in polishing equipment, there is a difference in the rotational speed between the outer periphery and the center of the workpiece to be processed and the rotational speed between the outer periphery and the center of the upper surface plate being processed, that is, the circumferential speed of the contact position being polished. Due to the difference in surface area, problems occur with flatness accuracy when used over time.Furthermore, when polishing only flat surfaces, there is a problem with compound supply, and furthermore, the upper surface plate becomes clogged, reducing polishing efficiency. Was.

〔発明の目的〕[Purpose of the invention]

本発明は、前記の問題点に鑑みて成されたもので、半導
体ウェハへの高精度の平坦精度と鏡面加工を施すための
ポリッシング装置とそのポリッシング方法の提供であり
、加えて、半導体ウェハのポリッシング加工を長期間に
わたって高精度で行い、且つ、上方定盤の延命を計るこ
とができるポリッシング装置とそのポリッシング方法を
提供することを目的とするものである。
The present invention has been made in view of the above-mentioned problems, and provides a polishing apparatus and a polishing method thereof for applying high-precision flatness and mirror finishing to semiconductor wafers. It is an object of the present invention to provide a polishing device and a polishing method thereof that can perform polishing processing with high precision over a long period of time and extend the life of an upper surface plate.

〔発明の構成〕[Structure of the invention]

本発明の構成は、ワークをバキューム吸着させ −る下
方定盤を備えて自転する回転テーブルと、ワークをポリ
ッシュ加工する上方定盤を備えて自転するスピンドル軸
と、回転テーブルを水平方向に移動させる移動機構と、
スピンドル軸をスピンドル軸の軸心と回転テーブルの軸
心とを平行及び傾斜させて保持する保持機構とを備えた
構成である。
The configuration of the present invention consists of a rotary table that rotates on its own axis with a lower surface plate that vacuums the workpiece, a spindle shaft that rotates on its own axis that has an upper surface plate that polishes the workpiece, and the rotary table that moves in the horizontal direction. a moving mechanism;
This configuration includes a holding mechanism that holds the spindle shaft such that the axial center of the spindle shaft and the axial center of the rotary table are parallel and inclined.

〔発明の作用〕[Action of the invention]

本発明の作用は、ワークをバキューム吸着させる下方定
盤を備えて自転する回転テーブルと、ワークをポリッシ
ュ加工する上方定盤を備えて自転するスピンドル軸と、
回転テニブルを水平方向に移動させる移動機構と、スピ
ンドル軸をスピンドル軸の軸心と回転テーブルの軸心と
を平行及び傾斜させて保持する保持機構とを備えたポリ
ッシング装置を用いて、保持機構でスピンドル軸を傾斜
させて上方定盤を下方定盤に対して非平行とし、ワーク
の外周側を俯角としワークの中心側を仰角として凸面に
ポリッシングする工程と、ワークの中心側を俯角としワ
ークの外周側を仰角として凹面にポリッシングする工程
と、保持機構でスピンドル軸を垂直保持させて上方定盤
と下方定盤とを平行としてワークを平面にポリッシング
する工程とを具備したものである。
The effects of the present invention include: a rotary table that rotates on its own axis and is equipped with a lower surface plate that vacuum-chucks a workpiece; a spindle shaft that rotates on its own axis that is equipped with an upper surface plate that polishes the workpiece;
Using a polishing device equipped with a moving mechanism that moves the rotary table in the horizontal direction and a holding mechanism that holds the spindle shaft with the axis of the spindle shaft and the axis of the rotary table parallel and inclined, The process involves tilting the spindle axis to make the upper surface plate non-parallel to the lower surface plate, polishing the workpiece into a convex surface with the outer circumference of the workpiece as an angle of depression and the center side of the workpiece as an elevation angle; This process includes the step of polishing the workpiece into a concave surface with the outer circumferential side as the elevation angle, and the step of polishing the workpiece into a flat surface with the spindle shaft held vertically by a holding mechanism and the upper surface plate and lower surface plate parallel to each other.

〔実施例〕〔Example〕

本発明の実施例を図面によって詳述する。 Embodiments of the present invention will be described in detail with reference to the drawings.

第1図は本発明の実施例のポリッシング装置の平面加工
時の説明図であり、第2図は凸面加工時の説明図であり
、第3図は凹面加工時の説明図である。
FIG. 1 is an explanatory diagram of a polishing apparatus according to an embodiment of the present invention during flat surface processing, FIG. 2 is an explanatory diagram of convex surface processing, and FIG. 3 is an explanatory diagram of concave surface processing.

本発明は、主として、シリコン半導体ウェハののワーク
Wのポリッシング装置とそのポリッシング方法に関する
ものであり、前記ワークWをバキューム吸着させる下方
定盤1を上面に備えて自転する回転テーブル2と、前記
ワークWの上面をポリッシュ加工する上方定盤3を下端
に備えて自転するスピンドル軸4と、前記回転テーブル
2を水平方向に移動させる移動機構5と、前記スピンド
ル軸4を該スピンドル軸4の軸心と前記回転テーブル2
の軸心とを平行に保持及び傾斜させて保持する保持機構
6とを備えたポリッシング装置であり、加えて、半導体
ウェハ等のワークWをポリッシュ加工するポリッシング
方法であり、前記ワークWをバキューム吸着させる下方
定盤1を上面に備えて自転する回転テーブル2と、前記
ワークWの上面をポリッシュ加工する上方定盤3を下端
に備えて自転するスピンドル軸4と、前記回転テープル
2を水平方向に移動させる移動機構5と、前記スピンド
ル軸4を該スピンドル軸4の軸心と前記回転テーブル2
の軸心とを平行に保持及び傾斜させて保持する保持機構
6とを備えたポリッシング装置を用いて、前記保持機構
6でスピンドル軸4を傾斜させることによって前記上方
定盤3を回転テーブル2の下方定盤1に対して非平行と
し、ワークWの外周側を俯角としワークWの中心側を仰
角として凸面にポリッシングする工程と、ワークWの中
心側を俯角としワークWの外周側を仰角として凹面にポ
リッシングする工程と、前記保持機構6でスピンドル軸
4を垂直保持させてスピンドル軸4の上方定盤3と回転
テーブル2の下方定盤1とを平行としてワークWの上面
を平面にポリッシングする工程とを具備したポリッシン
グ方法である。
The present invention mainly relates to a polishing apparatus and a polishing method for a workpiece W such as a silicon semiconductor wafer, and includes a rotary table 2 that rotates and has a lower surface plate 1 on its upper surface that vacuum-adsorbs the workpiece W; A spindle shaft 4 that rotates and has an upper surface plate 3 at its lower end that polishes the upper surface of the W, a moving mechanism 5 that moves the rotary table 2 in the horizontal direction, and a moving mechanism 5 that moves the spindle shaft 4 to the axis of the spindle shaft 4. and the rotary table 2
This is a polishing device equipped with a holding mechanism 6 that holds the workpiece W in parallel with the axis of the workpiece W and holds the workpiece W in an inclined manner. a rotary table 2 that rotates on its upper surface with a lower surface plate 1 for polishing the upper surface of the work W; a spindle shaft 4 that rotates on its lower end with an upper surface plate 3 that polishes the upper surface of the workpiece W; A moving mechanism 5 that moves the spindle shaft 4 between the axis of the spindle shaft 4 and the rotary table 2.
Using a polishing device equipped with a holding mechanism 6 that holds and tilts the axis parallel to the axis of A step of polishing the surface non-parallel to the lower surface plate 1 to make it convex, with the outer circumference of the work W as the angle of depression and the center of the work W as the angle of elevation, and the center side of the work W as the angle of depression and the outer circumference of the work W as the angle of elevation. A process of polishing the concave surface, and polishing the upper surface of the workpiece W into a flat surface by holding the spindle shaft 4 vertically with the holding mechanism 6 and making the upper surface plate 3 of the spindle shaft 4 and the lower surface plate 1 of the rotary table 2 parallel. This is a polishing method comprising steps.

即ち、本発明は、シリコン等の半導体ウェハを所望の厚
さにするために研削加工を行っている多軸の研削盤の最
終工程、又は、ポリッシング専用装置において、研削後
の半導体ウェハの加工によるダメージを完全に取り去り
高精度の平坦加工、鏡面加工を施すものである。
That is, the present invention is suitable for processing semiconductor wafers after grinding in the final process of a multi-axis grinder that grinds semiconductor wafers such as silicon to a desired thickness, or in dedicated polishing equipment. It completely removes damage and performs high-precision flattening and mirror finishing.

本発明のポリッシング装置の回転テーブル2は立設状態
で形設されており、該回転テーブル2の上面には半導体
ウェハ等のワークWをバキューム吸着させるチャック等
の下方定盤1を備えると共に、電動機から駆動源を得て
機械的に接続され自転しているものである。
The rotary table 2 of the polishing apparatus of the present invention is installed in an upright state, and the upper surface of the rotary table 2 is equipped with a lower surface plate 1 such as a chuck for vacuum-chucking a workpiece W such as a semiconductor wafer, and an electric motor. It is mechanically connected and rotates by getting its drive source from the

そして、回転テーブル2を水平方向に移動させる移動機
構5を設けたものであり、移動機構5は例えば一方にレ
ールを形設し、該レールと摺動する摺動溝を他方に形設
し、夫々を嵌合させ摺動できる構造で良いものである。
A moving mechanism 5 for horizontally moving the rotary table 2 is provided, and the moving mechanism 5 has, for example, a rail formed on one side, and a sliding groove that slides on the rail formed on the other side. A structure that allows them to fit and slide is sufficient.

前記スピンドル軸4は、上方から垂下させた状態で配設
し、上方に趣動源となる電動機を備え自転すると共に、
下端へはポリッシュ加工する上方定盤3を備えたもので
あり、該上方定盤3の研磨面は綿布、天然人造皮革、フ
ェルト等からなるものである。
The spindle shaft 4 is arranged in a state where it hangs down from above, and is equipped with an electric motor serving as a vibration source above, and rotates on its own axis.
The lower end is provided with an upper surface plate 3 for polishing, and the polishing surface of the upper surface plate 3 is made of cotton cloth, natural artificial leather, felt, or the like.

そして、スピンドル軸4を坦持するポリッシング装置の
側壁と、該スピンドル軸4の側壁との間へ該スピンドル
軸4の軸心と前記回転テーブル2の軸心とを平行に保持
及び傾斜させて保持する保持機構6とを備えたものであ
り、該保持機構6は夫々の側壁の何れか一方側へ半球面
状の突呂物を形成して、該突出物を嵌入させる凹陥部を
形成し、合着させると共に、その周域へ少なくとも3本
のボルトを貫設させて、該ボルトを夫々回動させる構造
である。
The axial center of the spindle shaft 4 and the axial center of the rotary table 2 are held parallel and tilted between the side wall of the polishing device supporting the spindle shaft 4 and the side wall of the spindle shaft 4. The holding mechanism 6 has a hemispherical protrusion formed on either side of each side wall to form a recess into which the protrusion is fitted, It has a structure in which at least three bolts are inserted through the circumferential area of the two parts, and each of the bolts is rotated.

前記回転テーブル2の下方定盤1に半導体ウェハ等のワ
ークWを載置し、ワークWをバキューム吸着させると共
に、回転テーブル2を自転させるものであり、綿布、天
然人造皮革、フェルト等からなる研磨面へアルミナ、酸
化鉄、酸化クロム等のコンパウンドを加えて、上方定盤
3を下端に備えたスピンドル軸4を自転させると共に上
方から降下させてワークW上面のポリッシングをするも
のである。
A workpiece W such as a semiconductor wafer is placed on the lower surface plate 1 of the rotary table 2, and the workpiece W is vacuum-adsorbed, and the rotary table 2 is rotated on its own axis. A compound such as alumina, iron oxide, chromium oxide, etc. is added to the surface, and a spindle shaft 4 having an upper surface plate 3 at the lower end is rotated and lowered from above to polish the upper surface of the work W.

次いで、前記ポリッシング装置を用いて、保持機構6で
スピンドル軸4を傾斜させることによって、上方定盤3
と回転テーブル2へ備えた下方定盤1とは非平行となる
ものであり、その際、回転テーブル2の移動装置で移動
させて位置合わせをし、下方定盤1ヘバキユ一ム吸着さ
せた半導体ウェハ等のワークWの外周側を俯角としワー
クWの中心側を仰角として、回転テーブル2とスピンド
ル軸4を夫々回転させてポリッシングすると凸面に加工
されるものであり、逆に、ワークWの中心側を俯角とし
ワークWの外周側を仰角としてポリッシングすると凹面
にポリッシングされるものであり、凸面及び凹面のポリ
ッシングでは平面ポリッシングに対して加工面積が少な
く、僅かに傾斜させた空隙部にコンパウンドが充填蓄え
られているものである。
Next, using the polishing device, the upper surface plate 3 is tilted by the holding mechanism 6 to tilt the spindle shaft 4.
and the lower surface plate 1 provided to the rotary table 2 are non-parallel, and at that time, the moving device of the rotary table 2 is used to move and align the semiconductors that are attracted to the lower surface plate 1. When polishing is performed by rotating the rotary table 2 and the spindle shaft 4, with the outer circumferential side of the work W such as a wafer as the angle of depression and the center side of the work W as the angle of elevation, a convex surface is processed. When polishing with the side as the angle of depression and the outer circumference of the workpiece W as the angle of elevation, the concave surface is polished, and polishing of convex and concave surfaces requires less processing area than flat polishing, and the compound fills the slightly inclined void. It is stored.

そして、前記スピンドル軸4の保持機構6で、該スピン
ドル軸4を垂直保持させると、スピンドル軸4の軸心と
回転テーブル2の軸心とは平行となり、従って、スピン
ドル軸4の下端の上方定盤3と回転テーブル2の下方定
盤1とも平行となり、ワークWの上面に平面ポリッシン
グができるものである。
When the spindle shaft 4 is held vertically by the holding mechanism 6 of the spindle shaft 4, the axis of the spindle shaft 4 and the axis of the rotary table 2 are parallel to each other, so that the lower end of the spindle shaft 4 is fixed upward. The platen 3 and the lower surface plate 1 of the rotary table 2 are also parallel to each other, so that flat surface polishing can be performed on the upper surface of the workpiece W.

本発明のポリッシング装置とそのポリッシング方法では
、一定量に設定されたポリッシング量を迅速に、高精度
に、且つ、上方室!!3の延命を計ったもので、先ず、
スピンドル軸4の保持装置で傾斜させて凹面加工を施し
、その後、回転テーブル2の移動装置でワークWと上方
定盤3との位置合わせをして凸面加工をし、その後、前
記保持機構6で平行にして平面加工をするものである。
The polishing device and polishing method of the present invention can quickly and accurately polish a set amount in the upper chamber! ! It was designed to extend the life of 3.First of all,
The holding device of the spindle shaft 4 is used to tilt the workpiece W to perform concave surface machining, and then the moving device of the rotary table 2 is used to align the workpiece W and the upper surface plate 3 to perform convex surface machining. This is for parallel plane processing.

〔発明の効果〕〔Effect of the invention〕

本発明のポリッシング装置そのポリッシング方法は、ワ
ークを一旦凸面又は凹面にポリッシングした後に、平面
ポリッシングするようにしているので、経時にわたって
のポリッシングの上方定盤の目詰りを防止し、長期間に
わたり安定したポリッシング加工を維持できる共に、ワ
ークの加工部位へのコンパウンドの供給を十分に行うこ
とができることができ、その結果、加工精度を長期間安
定して維持でき、更に、上方定盤の延命を計るものであ
る。
The polishing device of the present invention and its polishing method polish the workpiece once on a convex or concave surface, and then polish the workpiece on a flat surface. This prevents clogging of the upper surface plate during polishing over time, and provides stable polishing over a long period of time. It is possible to maintain the polishing process and to supply sufficient compound to the processing area of the workpiece.As a result, the processing accuracy can be maintained stably for a long period of time, and the life of the upper surface plate can be extended. It is.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例のポリッシング装置の平面加工
時の説明図である。第2図は凸面加工時の説明図である
。第3図は凹面加工時の説明図である。 W−ワーク。 1−下方定盤、2一回転テーブル、3−上方定盤、4−
スピンドル軸、5−移動機構、6−保持機構。
FIG. 1 is an explanatory diagram of a polishing apparatus according to an embodiment of the present invention during planar processing. FIG. 2 is an explanatory diagram when machining a convex surface. FIG. 3 is an explanatory diagram when machining a concave surface. W-work. 1-Lower surface plate, 2-Rotary table, 3-Upper surface plate, 4-
Spindle axis, 5-moving mechanism, 6-holding mechanism.

Claims (2)

【特許請求の範囲】[Claims] (1)半導体ウェハ等のワークをポリッシュ加工するポ
リッシング装置において、 前記ワークをバキューム吸着させる下方定盤を上面に備
えて自転する回転テーブルと、前記ワークの上面をポリ
ッシュ加工する上方定盤を下端に備えて自転するスピン
ドル軸と、前記回転テーブルを水平方向に移動させる移
動機構と、前記スピンドル軸を該スピンドル軸の軸心と
前記回転テーブルの軸心とを平行に保持及び傾斜させて
保持する保持機構とを備えたことを特徴とするポリッシ
ング装置。
(1) A polishing device for polishing a workpiece such as a semiconductor wafer, which includes a rotary table that rotates with a lower surface plate on its upper surface that vacuum-sucks the workpiece, and an upper surface plate that polishes the upper surface of the workpiece at its lower end. a spindle shaft that rotates on its own axis, a movement mechanism that moves the rotary table in a horizontal direction, and a holding mechanism that holds the spindle shaft such that the axis of the spindle shaft and the axis of the rotary table are parallel to each other and tilted. A polishing device characterized by comprising a mechanism.
(2)半導体ウェハ等のワークをポリッシュ加工するポ
リッシング方法であり、前記ワークをバキューム吸着さ
せる下方定盤を上面に備えて自転する回転テーブルと、
前記ワークの上面をポリッシュ加工する上方定盤を下端
に備えて自転するスピンドル軸と、前記回転テーブルを
水平方向に移動させる移動機構と、前記スピンドル軸を
該スピンドル軸の軸心と前記回転テーブルの軸心とを平
行に保持及び傾斜させて保持する保持機構とを備えたポ
リッシング装置を用いて、 前記保持機構でスピンドル軸を傾斜させることによって
前記上方定盤を回転テーブルの下方定盤に対して非平行
とし、ワークの外周側を俯角としワークの中心側を仰角
として凸面にポリッシングする工程と、ワークの中心側
を俯角としワークの外周側を仰角として凹面にポリッシ
ングする工程と、前記保持機構でスピンドル軸を垂直保
持させてスピンドル軸の上方定盤と回転テーブルの下方
定盤とを平行としてワークの上面を平面にポリッシング
する工程とを具備したことを特徴とするポリッシング方
法。
(2) A polishing method for polishing a workpiece such as a semiconductor wafer, which includes a rotating rotary table equipped with a lower surface plate on its upper surface that vacuum-adsorbs the workpiece;
A spindle shaft that rotates with an upper surface plate at its lower end that polishes the upper surface of the workpiece, a moving mechanism that moves the rotary table in the horizontal direction, and a movement mechanism that moves the spindle shaft between the axis of the spindle shaft and the rotary table. Using a polishing device equipped with a holding mechanism that holds and tilts the spindle axis parallel to the axis, the upper surface plate is moved relative to the lower surface plate of the rotary table by tilting the spindle axis with the holding mechanism. A step of polishing the workpiece to a convex surface with the outer circumference of the workpiece as an angle of depression and a center side of the workpiece as an elevation angle; and a step of polishing the workpiece to a concave surface with the center side of the workpiece as an angle of depression and the outer circumference of the workpiece as an elevation angle. A polishing method comprising the step of holding the spindle shaft vertically and polishing the upper surface of the workpiece to a flat surface with the upper surface plate of the spindle shaft and the lower surface plate of the rotary table parallel to each other.
JP2329538A 1990-11-30 1990-11-30 Polishing apparatus and polishing method Expired - Lifetime JP3007678B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2329538A JP3007678B2 (en) 1990-11-30 1990-11-30 Polishing apparatus and polishing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2329538A JP3007678B2 (en) 1990-11-30 1990-11-30 Polishing apparatus and polishing method

Publications (2)

Publication Number Publication Date
JPH04201178A true JPH04201178A (en) 1992-07-22
JP3007678B2 JP3007678B2 (en) 2000-02-07

Family

ID=18222484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2329538A Expired - Lifetime JP3007678B2 (en) 1990-11-30 1990-11-30 Polishing apparatus and polishing method

Country Status (1)

Country Link
JP (1) JP3007678B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997032690A1 (en) * 1996-03-04 1997-09-12 Teikoku Denso Co., Ltd. Resin disk polishing method and apparatus
JP2011040753A (en) * 2009-08-12 2011-02-24 Siltronic Ag Method of producing polished semiconductor wafer
JP2018170370A (en) * 2017-03-29 2018-11-01 株式会社荏原製作所 Polishing apparatus, polishing method, and computer readable recording medium storing program

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997032690A1 (en) * 1996-03-04 1997-09-12 Teikoku Denso Co., Ltd. Resin disk polishing method and apparatus
WO1997032691A1 (en) * 1996-03-04 1997-09-12 Teikoku Denso Co., Ltd. Method of polishing hard disc and polishing apparatus therefor
US6116987A (en) * 1996-03-04 2000-09-12 Kubo; Yuzo Method of polishing hard disc and polishing apparatus therefor
JP2011040753A (en) * 2009-08-12 2011-02-24 Siltronic Ag Method of producing polished semiconductor wafer
US8409992B2 (en) 2009-08-12 2013-04-02 Siltronic Ag Method for producing a polished semiconductor wafer
JP2018170370A (en) * 2017-03-29 2018-11-01 株式会社荏原製作所 Polishing apparatus, polishing method, and computer readable recording medium storing program

Also Published As

Publication number Publication date
JP3007678B2 (en) 2000-02-07

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