JPH04201178A - Polishing device and polishing method - Google Patents
Polishing device and polishing methodInfo
- Publication number
- JPH04201178A JPH04201178A JP2329538A JP32953890A JPH04201178A JP H04201178 A JPH04201178 A JP H04201178A JP 2329538 A JP2329538 A JP 2329538A JP 32953890 A JP32953890 A JP 32953890A JP H04201178 A JPH04201178 A JP H04201178A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- workpiece
- spindle shaft
- rotary table
- surface plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 13
- 238000010586 diagram Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- -1 alumina Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000002649 leather substitute Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、主として、シリコン半導体ウェハののワーク
のポリッシング装置とそのポリツシング方法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention mainly relates to a polishing apparatus for a silicon semiconductor wafer workpiece and a polishing method thereof.
一般にシリコン等の半導体ウェハは、先ず、シリコン結
晶体を一定の厚さにスライシングし、そのスライシング
したウェハを更に所望の厚さにするために研削加工を行
っている。In general, semiconductor wafers such as silicon are produced by first slicing a silicon crystal to a certain thickness, and then grinding the sliced wafer to obtain a desired thickness.
通常、研削加工はカップ型砥石によって粗研削、中研削
、仕上研削等に分けて行われており、特に、近年では、
半導体ウェハを自転させながら研削を行い、研削効率を
高めているが、昨今要求される半導体ウェハは高精度の
平坦精度と鏡面加工であり、従来のようなカップ型砥石
で研削するだけでは、半導体ウェハに研削によるダメー
ジが残り求められる平坦精度は不可能と成っている。Normally, grinding is performed using a cup-shaped grindstone, divided into rough grinding, medium grinding, finish grinding, etc. In recent years, in particular,
Grinding is carried out while rotating the semiconductor wafer, increasing grinding efficiency. However, semiconductor wafers require high-precision flatness and mirror finishing these days, and grinding with a conventional cup-shaped grindstone is not enough. Damage from grinding remains on the wafer, making it impossible to achieve the required flatness accuracy.
又、ポリッシング装置においても加工されるワークの外
周辺と中心辺との回転速度と加工する上方定盤の外周辺
と中心辺との回転速度の相違、つまり、ポリッシングさ
れている接触位置の周速度の相違から経時の使用では平
坦精度に問題をきたしており、更に、平面のみのポリッ
シングの場合にはコンパウンドの供給に問題があり、更
に、上方定盤に目詰りを起こしポリッシング加工の能率
が低下していた。Also, in polishing equipment, there is a difference in the rotational speed between the outer periphery and the center of the workpiece to be processed and the rotational speed between the outer periphery and the center of the upper surface plate being processed, that is, the circumferential speed of the contact position being polished. Due to the difference in surface area, problems occur with flatness accuracy when used over time.Furthermore, when polishing only flat surfaces, there is a problem with compound supply, and furthermore, the upper surface plate becomes clogged, reducing polishing efficiency. Was.
本発明は、前記の問題点に鑑みて成されたもので、半導
体ウェハへの高精度の平坦精度と鏡面加工を施すための
ポリッシング装置とそのポリッシング方法の提供であり
、加えて、半導体ウェハのポリッシング加工を長期間に
わたって高精度で行い、且つ、上方定盤の延命を計るこ
とができるポリッシング装置とそのポリッシング方法を
提供することを目的とするものである。The present invention has been made in view of the above-mentioned problems, and provides a polishing apparatus and a polishing method thereof for applying high-precision flatness and mirror finishing to semiconductor wafers. It is an object of the present invention to provide a polishing device and a polishing method thereof that can perform polishing processing with high precision over a long period of time and extend the life of an upper surface plate.
本発明の構成は、ワークをバキューム吸着させ −る下
方定盤を備えて自転する回転テーブルと、ワークをポリ
ッシュ加工する上方定盤を備えて自転するスピンドル軸
と、回転テーブルを水平方向に移動させる移動機構と、
スピンドル軸をスピンドル軸の軸心と回転テーブルの軸
心とを平行及び傾斜させて保持する保持機構とを備えた
構成である。The configuration of the present invention consists of a rotary table that rotates on its own axis with a lower surface plate that vacuums the workpiece, a spindle shaft that rotates on its own axis that has an upper surface plate that polishes the workpiece, and the rotary table that moves in the horizontal direction. a moving mechanism;
This configuration includes a holding mechanism that holds the spindle shaft such that the axial center of the spindle shaft and the axial center of the rotary table are parallel and inclined.
本発明の作用は、ワークをバキューム吸着させる下方定
盤を備えて自転する回転テーブルと、ワークをポリッシ
ュ加工する上方定盤を備えて自転するスピンドル軸と、
回転テニブルを水平方向に移動させる移動機構と、スピ
ンドル軸をスピンドル軸の軸心と回転テーブルの軸心と
を平行及び傾斜させて保持する保持機構とを備えたポリ
ッシング装置を用いて、保持機構でスピンドル軸を傾斜
させて上方定盤を下方定盤に対して非平行とし、ワーク
の外周側を俯角としワークの中心側を仰角として凸面に
ポリッシングする工程と、ワークの中心側を俯角としワ
ークの外周側を仰角として凹面にポリッシングする工程
と、保持機構でスピンドル軸を垂直保持させて上方定盤
と下方定盤とを平行としてワークを平面にポリッシング
する工程とを具備したものである。The effects of the present invention include: a rotary table that rotates on its own axis and is equipped with a lower surface plate that vacuum-chucks a workpiece; a spindle shaft that rotates on its own axis that is equipped with an upper surface plate that polishes the workpiece;
Using a polishing device equipped with a moving mechanism that moves the rotary table in the horizontal direction and a holding mechanism that holds the spindle shaft with the axis of the spindle shaft and the axis of the rotary table parallel and inclined, The process involves tilting the spindle axis to make the upper surface plate non-parallel to the lower surface plate, polishing the workpiece into a convex surface with the outer circumference of the workpiece as an angle of depression and the center side of the workpiece as an elevation angle; This process includes the step of polishing the workpiece into a concave surface with the outer circumferential side as the elevation angle, and the step of polishing the workpiece into a flat surface with the spindle shaft held vertically by a holding mechanism and the upper surface plate and lower surface plate parallel to each other.
本発明の実施例を図面によって詳述する。 Embodiments of the present invention will be described in detail with reference to the drawings.
第１図は本発明の実施例のポリッシング装置の平面加工
時の説明図であり、第２図は凸面加工時の説明図であり
、第３図は凹面加工時の説明図である。FIG. 1 is an explanatory diagram of a polishing apparatus according to an embodiment of the present invention during flat surface processing, FIG. 2 is an explanatory diagram of convex surface processing, and FIG. 3 is an explanatory diagram of concave surface processing.
本発明は、主として、シリコン半導体ウェハののワーク
Ｗのポリッシング装置とそのポリッシング方法に関する
ものであり、前記ワークＷをバキューム吸着させる下方
定盤１を上面に備えて自転する回転テーブル２と、前記
ワークＷの上面をポリッシュ加工する上方定盤３を下端
に備えて自転するスピンドル軸４と、前記回転テーブル
２を水平方向に移動させる移動機構５と、前記スピンド
ル軸４を該スピンドル軸４の軸心と前記回転テーブル２
の軸心とを平行に保持及び傾斜させて保持する保持機構
６とを備えたポリッシング装置であり、加えて、半導体
ウェハ等のワークＷをポリッシュ加工するポリッシング
方法であり、前記ワークＷをバキューム吸着させる下方
定盤１を上面に備えて自転する回転テーブル２と、前記
ワークＷの上面をポリッシュ加工する上方定盤３を下端
に備えて自転するスピンドル軸４と、前記回転テープル
２を水平方向に移動させる移動機構５と、前記スピンド
ル軸４を該スピンドル軸４の軸心と前記回転テーブル２
の軸心とを平行に保持及び傾斜させて保持する保持機構
６とを備えたポリッシング装置を用いて、前記保持機構
６でスピンドル軸４を傾斜させることによって前記上方
定盤３を回転テーブル２の下方定盤１に対して非平行と
し、ワークＷの外周側を俯角としワークＷの中心側を仰
角として凸面にポリッシングする工程と、ワークＷの中
心側を俯角としワークＷの外周側を仰角として凹面にポ
リッシングする工程と、前記保持機構６でスピンドル軸
４を垂直保持させてスピンドル軸４の上方定盤３と回転
テーブル２の下方定盤１とを平行としてワークＷの上面
を平面にポリッシングする工程とを具備したポリッシン
グ方法である。The present invention mainly relates to a polishing apparatus and a polishing method for a workpiece W such as a silicon semiconductor wafer, and includes a rotary table 2 that rotates and has a lower surface plate 1 on its upper surface that vacuum-adsorbs the workpiece W; A spindle shaft 4 that rotates and has an upper surface plate 3 at its lower end that polishes the upper surface of the W, a moving mechanism 5 that moves the rotary table 2 in the horizontal direction, and a moving mechanism 5 that moves the spindle shaft 4 to the axis of the spindle shaft 4. and the rotary table 2
This is a polishing device equipped with a holding mechanism 6 that holds the workpiece W in parallel with the axis of the workpiece W and holds the workpiece W in an inclined manner. a rotary table 2 that rotates on its upper surface with a lower surface plate 1 for polishing the upper surface of the work W; a spindle shaft 4 that rotates on its lower end with an upper surface plate 3 that polishes the upper surface of the workpiece W; A moving mechanism 5 that moves the spindle shaft 4 between the axis of the spindle shaft 4 and the rotary table 2.
Using a polishing device equipped with a holding mechanism 6 that holds and tilts the axis parallel to the axis of A step of polishing the surface non-parallel to the lower surface plate 1 to make it convex, with the outer circumference of the work W as the angle of depression and the center of the work W as the angle of elevation, and the center side of the work W as the angle of depression and the outer circumference of the work W as the angle of elevation. A process of polishing the concave surface, and polishing the upper surface of the workpiece W into a flat surface by holding the spindle shaft 4 vertically with the holding mechanism 6 and making the upper surface plate 3 of the spindle shaft 4 and the lower surface plate 1 of the rotary table 2 parallel. This is a polishing method comprising steps.
即ち、本発明は、シリコン等の半導体ウェハを所望の厚
さにするために研削加工を行っている多軸の研削盤の最
終工程、又は、ポリッシング専用装置において、研削後
の半導体ウェハの加工によるダメージを完全に取り去り
高精度の平坦加工、鏡面加工を施すものである。That is, the present invention is suitable for processing semiconductor wafers after grinding in the final process of a multi-axis grinder that grinds semiconductor wafers such as silicon to a desired thickness, or in dedicated polishing equipment. It completely removes damage and performs high-precision flattening and mirror finishing.
本発明のポリッシング装置の回転テーブル２は立設状態
で形設されており、該回転テーブル２の上面には半導体
ウェハ等のワークＷをバキューム吸着させるチャック等
の下方定盤１を備えると共に、電動機から駆動源を得て
機械的に接続され自転しているものである。The rotary table 2 of the polishing apparatus of the present invention is installed in an upright state, and the upper surface of the rotary table 2 is equipped with a lower surface plate 1 such as a chuck for vacuum-chucking a workpiece W such as a semiconductor wafer, and an electric motor. It is mechanically connected and rotates by getting its drive source from the
そして、回転テーブル２を水平方向に移動させる移動機
構５を設けたものであり、移動機構５は例えば一方にレ
ールを形設し、該レールと摺動する摺動溝を他方に形設
し、夫々を嵌合させ摺動できる構造で良いものである。A moving mechanism 5 for horizontally moving the rotary table 2 is provided, and the moving mechanism 5 has, for example, a rail formed on one side, and a sliding groove that slides on the rail formed on the other side. A structure that allows them to fit and slide is sufficient.
前記スピンドル軸４は、上方から垂下させた状態で配設
し、上方に趣動源となる電動機を備え自転すると共に、
下端へはポリッシュ加工する上方定盤３を備えたもので
あり、該上方定盤３の研磨面は綿布、天然人造皮革、フ
ェルト等からなるものである。The spindle shaft 4 is arranged in a state where it hangs down from above, and is equipped with an electric motor serving as a vibration source above, and rotates on its own axis.
The lower end is provided with an upper surface plate 3 for polishing, and the polishing surface of the upper surface plate 3 is made of cotton cloth, natural artificial leather, felt, or the like.
そして、スピンドル軸４を坦持するポリッシング装置の
側壁と、該スピンドル軸４の側壁との間へ該スピンドル
軸４の軸心と前記回転テーブル２の軸心とを平行に保持
及び傾斜させて保持する保持機構６とを備えたものであ
り、該保持機構６は夫々の側壁の何れか一方側へ半球面
状の突呂物を形成して、該突出物を嵌入させる凹陥部を
形成し、合着させると共に、その周域へ少なくとも３本
のボルトを貫設させて、該ボルトを夫々回動させる構造
である。The axial center of the spindle shaft 4 and the axial center of the rotary table 2 are held parallel and tilted between the side wall of the polishing device supporting the spindle shaft 4 and the side wall of the spindle shaft 4. The holding mechanism 6 has a hemispherical protrusion formed on either side of each side wall to form a recess into which the protrusion is fitted, It has a structure in which at least three bolts are inserted through the circumferential area of the two parts, and each of the bolts is rotated.
前記回転テーブル２の下方定盤１に半導体ウェハ等のワ
ークＷを載置し、ワークＷをバキューム吸着させると共
に、回転テーブル２を自転させるものであり、綿布、天
然人造皮革、フェルト等からなる研磨面へアルミナ、酸
化鉄、酸化クロム等のコンパウンドを加えて、上方定盤
３を下端に備えたスピンドル軸４を自転させると共に上
方から降下させてワークＷ上面のポリッシングをするも
のである。A workpiece W such as a semiconductor wafer is placed on the lower surface plate 1 of the rotary table 2, and the workpiece W is vacuum-adsorbed, and the rotary table 2 is rotated on its own axis. A compound such as alumina, iron oxide, chromium oxide, etc. is added to the surface, and a spindle shaft 4 having an upper surface plate 3 at the lower end is rotated and lowered from above to polish the upper surface of the work W.
次いで、前記ポリッシング装置を用いて、保持機構６で
スピンドル軸４を傾斜させることによって、上方定盤３
と回転テーブル２へ備えた下方定盤１とは非平行となる
ものであり、その際、回転テーブル２の移動装置で移動
させて位置合わせをし、下方定盤１ヘバキユ一ム吸着さ
せた半導体ウェハ等のワークＷの外周側を俯角としワー
クＷの中心側を仰角として、回転テーブル２とスピンド
ル軸４を夫々回転させてポリッシングすると凸面に加工
されるものであり、逆に、ワークＷの中心側を俯角とし
ワークＷの外周側を仰角としてポリッシングすると凹面
にポリッシングされるものであり、凸面及び凹面のポリ
ッシングでは平面ポリッシングに対して加工面積が少な
く、僅かに傾斜させた空隙部にコンパウンドが充填蓄え
られているものである。Next, using the polishing device, the upper surface plate 3 is tilted by the holding mechanism 6 to tilt the spindle shaft 4.
and the lower surface plate 1 provided to the rotary table 2 are non-parallel, and at that time, the moving device of the rotary table 2 is used to move and align the semiconductors that are attracted to the lower surface plate 1. When polishing is performed by rotating the rotary table 2 and the spindle shaft 4, with the outer circumferential side of the work W such as a wafer as the angle of depression and the center side of the work W as the angle of elevation, a convex surface is processed. When polishing with the side as the angle of depression and the outer circumference of the workpiece W as the angle of elevation, the concave surface is polished, and polishing of convex and concave surfaces requires less processing area than flat polishing, and the compound fills the slightly inclined void. It is stored.
そして、前記スピンドル軸４の保持機構６で、該スピン
ドル軸４を垂直保持させると、スピンドル軸４の軸心と
回転テーブル２の軸心とは平行となり、従って、スピン
ドル軸４の下端の上方定盤３と回転テーブル２の下方定
盤１とも平行となり、ワークＷの上面に平面ポリッシン
グができるものである。When the spindle shaft 4 is held vertically by the holding mechanism 6 of the spindle shaft 4, the axis of the spindle shaft 4 and the axis of the rotary table 2 are parallel to each other, so that the lower end of the spindle shaft 4 is fixed upward. The platen 3 and the lower surface plate 1 of the rotary table 2 are also parallel to each other, so that flat surface polishing can be performed on the upper surface of the workpiece W.
本発明のポリッシング装置とそのポリッシング方法では
、一定量に設定されたポリッシング量を迅速に、高精度
に、且つ、上方室！！３の延命を計ったもので、先ず、
スピンドル軸４の保持装置で傾斜させて凹面加工を施し
、その後、回転テーブル２の移動装置でワークＷと上方
定盤３との位置合わせをして凸面加工をし、その後、前
記保持機構６で平行にして平面加工をするものである。The polishing device and polishing method of the present invention can quickly and accurately polish a set amount in the upper chamber! ! It was designed to extend the life of 3.First of all,
The holding device of the spindle shaft 4 is used to tilt the workpiece W to perform concave surface machining, and then the moving device of the rotary table 2 is used to align the workpiece W and the upper surface plate 3 to perform convex surface machining. This is for parallel plane processing.
本発明のポリッシング装置そのポリッシング方法は、ワ
ークを一旦凸面又は凹面にポリッシングした後に、平面
ポリッシングするようにしているので、経時にわたって
のポリッシングの上方定盤の目詰りを防止し、長期間に
わたり安定したポリッシング加工を維持できる共に、ワ
ークの加工部位へのコンパウンドの供給を十分に行うこ
とができることができ、その結果、加工精度を長期間安
定して維持でき、更に、上方定盤の延命を計るものであ
る。The polishing device of the present invention and its polishing method polish the workpiece once on a convex or concave surface, and then polish the workpiece on a flat surface. This prevents clogging of the upper surface plate during polishing over time, and provides stable polishing over a long period of time. It is possible to maintain the polishing process and to supply sufficient compound to the processing area of the workpiece.As a result, the processing accuracy can be maintained stably for a long period of time, and the life of the upper surface plate can be extended. It is.
第１図は本発明の実施例のポリッシング装置の平面加工
時の説明図である。第２図は凸面加工時の説明図である
。第３図は凹面加工時の説明図である。
Ｗ−ワーク。
１−下方定盤、２一回転テーブル、３−上方定盤、４−
スピンドル軸、５−移動機構、６−保持機構。FIG. 1 is an explanatory diagram of a polishing apparatus according to an embodiment of the present invention during planar processing. FIG. 2 is an explanatory diagram when machining a convex surface. FIG. 3 is an explanatory diagram when machining a concave surface. W-work. 1-Lower surface plate, 2-Rotary table, 3-Upper surface plate, 4-
Spindle axis, 5-moving mechanism, 6-holding mechanism.
Claims (2)
リッシング装置において、 前記ワークをバキューム吸着させる下方定盤を上面に備
えて自転する回転テーブルと、前記ワークの上面をポリ
ッシュ加工する上方定盤を下端に備えて自転するスピン
ドル軸と、前記回転テーブルを水平方向に移動させる移
動機構と、前記スピンドル軸を該スピンドル軸の軸心と
前記回転テーブルの軸心とを平行に保持及び傾斜させて
保持する保持機構とを備えたことを特徴とするポリッシ
ング装置。(1) A polishing device for polishing a workpiece such as a semiconductor wafer, which includes a rotary table that rotates with a lower surface plate on its upper surface that vacuum-sucks the workpiece, and an upper surface plate that polishes the upper surface of the workpiece at its lower end. a spindle shaft that rotates on its own axis, a movement mechanism that moves the rotary table in a horizontal direction, and a holding mechanism that holds the spindle shaft such that the axis of the spindle shaft and the axis of the rotary table are parallel to each other and tilted. A polishing device characterized by comprising a mechanism.
リッシング方法であり、前記ワークをバキューム吸着さ
せる下方定盤を上面に備えて自転する回転テーブルと、
前記ワークの上面をポリッシュ加工する上方定盤を下端
に備えて自転するスピンドル軸と、前記回転テーブルを
水平方向に移動させる移動機構と、前記スピンドル軸を
該スピンドル軸の軸心と前記回転テーブルの軸心とを平
行に保持及び傾斜させて保持する保持機構とを備えたポ
リッシング装置を用いて、 前記保持機構でスピンドル軸を傾斜させることによって
前記上方定盤を回転テーブルの下方定盤に対して非平行
とし、ワークの外周側を俯角としワークの中心側を仰角
として凸面にポリッシングする工程と、ワークの中心側
を俯角としワークの外周側を仰角として凹面にポリッシ
ングする工程と、前記保持機構でスピンドル軸を垂直保
持させてスピンドル軸の上方定盤と回転テーブルの下方
定盤とを平行としてワークの上面を平面にポリッシング
する工程とを具備したことを特徴とするポリッシング方
法。(2) A polishing method for polishing a workpiece such as a semiconductor wafer, which includes a rotating rotary table equipped with a lower surface plate on its upper surface that vacuum-adsorbs the workpiece;
A spindle shaft that rotates with an upper surface plate at its lower end that polishes the upper surface of the workpiece, a moving mechanism that moves the rotary table in the horizontal direction, and a movement mechanism that moves the spindle shaft between the axis of the spindle shaft and the rotary table. Using a polishing device equipped with a holding mechanism that holds and tilts the spindle axis parallel to the axis, the upper surface plate is moved relative to the lower surface plate of the rotary table by tilting the spindle axis with the holding mechanism. A step of polishing the workpiece to a convex surface with the outer circumference of the workpiece as an angle of depression and a center side of the workpiece as an elevation angle; and a step of polishing the workpiece to a concave surface with the center side of the workpiece as an angle of depression and the outer circumference of the workpiece as an elevation angle. A polishing method comprising the step of holding the spindle shaft vertically and polishing the upper surface of the workpiece to a flat surface with the upper surface plate of the spindle shaft and the lower surface plate of the rotary table parallel to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2329538A JP3007678B2 (en) | 1990-11-30 | 1990-11-30 | Polishing apparatus and polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2329538A JP3007678B2 (en) | 1990-11-30 | 1990-11-30 | Polishing apparatus and polishing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04201178A true JPH04201178A (en) | 1992-07-22 |
| JP3007678B2 JP3007678B2 (en) | 2000-02-07 |
Family
ID=18222484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2329538A Expired - Lifetime JP3007678B2 (en) | 1990-11-30 | 1990-11-30 | Polishing apparatus and polishing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3007678B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997032690A1 (en) * | 1996-03-04 | 1997-09-12 | Teikoku Denso Co., Ltd. | Resin disk polishing method and apparatus |
| JP2011040753A (en) * | 2009-08-12 | 2011-02-24 | Siltronic Ag | Method of producing polished semiconductor wafer |
| JP2018170370A (en) * | 2017-03-29 | 2018-11-01 | 株式会社荏原製作所 | Polishing apparatus, polishing method, and computer readable recording medium storing program |
-
1990
- 1990-11-30 JP JP2329538A patent/JP3007678B2/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997032690A1 (en) * | 1996-03-04 | 1997-09-12 | Teikoku Denso Co., Ltd. | Resin disk polishing method and apparatus |
| WO1997032691A1 (en) * | 1996-03-04 | 1997-09-12 | Teikoku Denso Co., Ltd. | Method of polishing hard disc and polishing apparatus therefor |
| US6116987A (en) * | 1996-03-04 | 2000-09-12 | Kubo; Yuzo | Method of polishing hard disc and polishing apparatus therefor |
| JP2011040753A (en) * | 2009-08-12 | 2011-02-24 | Siltronic Ag | Method of producing polished semiconductor wafer |
| US8409992B2 (en) | 2009-08-12 | 2013-04-02 | Siltronic Ag | Method for producing a polished semiconductor wafer |
| JP2018170370A (en) * | 2017-03-29 | 2018-11-01 | 株式会社荏原製作所 | Polishing apparatus, polishing method, and computer readable recording medium storing program |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3007678B2 (en) | 2000-02-07 |
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