JPH08336741A - Method of grinding surface - Google Patents
Method of grinding surfaceInfo
- Publication number
- JPH08336741A JPH08336741A JP14333695A JP14333695A JPH08336741A JP H08336741 A JPH08336741 A JP H08336741A JP 14333695 A JP14333695 A JP 14333695A JP 14333695 A JP14333695 A JP 14333695A JP H08336741 A JPH08336741 A JP H08336741A
- Authority
- JP
- Japan
- Prior art keywords
- grindstone
- grinding
- semiconductor wafer
- workpiece
- grinding wheel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は表面研削方法に係り、特
に半導体ウェーハやハードディスク等の表面研削方法に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface grinding method, and more particularly to a surface grinding method for semiconductor wafers and hard disks.
【０００２】[0002]
【従来の技術】例えば、スライシングマシンによって薄
片状に切断されたウェーハは、後工程として表面が研削
加工される。この表面研削方法は、前記ウェーハをチャ
ックテーブル上に支持して、先ず、粒度の粗い砥石（例
えば、♯８００）を回転させて表面を荒加工したのち、
粒度の細かい砥石（例えば、♯１５００）を回転させて
表面を仕上げ加工する。2. Description of the Related Art For example, a wafer cut into a thin piece by a slicing machine has its surface ground as a post-process. In this surface grinding method, the wafer is supported on a chuck table, and a grindstone having a coarse grain size (for example, # 800) is first rotated to roughen the surface,
A grindstone with a fine grain size (for example, # 1500) is rotated to finish the surface.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
表面研削方法では、粒度の粗い砥石と粒度の細かい砥石
とが別体であるため、各々の砥石に回転駆動機構が必要
となり、これにより、研削装置が大型化するという欠点
がある。また、従来の表面研削方法では、ウェーハを仕
上げ加工する場合に、粒度の粗い砥石側から粒度の細か
い砥石側にウェーハを移動させなければならないので、
そのウェーハ移動機構が必要となり、このウェーハ移動
機構が複雑になるという欠点がある。However, in the conventional surface grinding method, since the grindstone with a coarse grain size and the grindstone with a fine grain size are separate bodies, a rotary drive mechanism is required for each grindstone, which results in grinding. There is a drawback that the device becomes large. Further, in the conventional surface grinding method, when finishing the wafer, it is necessary to move the wafer from the coarse-grain side to the fine-grain side.
The wafer moving mechanism is required, and the wafer moving mechanism is complicated.
【０００４】本発明は、このような事情に鑑みてなされ
たもので、研削装置の小型化が可能で、且つ被加工物を
移動させないで被加工物の表面を粒度の異なる二種類の
砥石で研削加工することができる表面研削方法を提供す
ることを目的とする。The present invention has been made in view of the above circumstances, and it is possible to reduce the size of a grinding machine and to use two types of grindstones having different grain sizes on the surface of a workpiece without moving the workpiece. An object of the present invention is to provide a surface grinding method capable of grinding.
【０００５】[0005]
【課題を解決するための手段】本発明は、前記目的を達
成する為に、被加工物支持テーブルに支持された被加工
物の表面に、回転するカップ型砥石を押し付けて該被加
工物の表面を研削する表面研削方法に於いて、前記カッ
プ型砥石を円周方向に二分割して内周側の砥石と外周側
の砥石とを一体に形成すると共に、内周側の砥石と外周
側の砥石とを粒度の異なる砥石に形成し、該カップ型砥
石の前記被加工物の表面に対する傾斜角度を変えて、該
被加工物の表面を前記内周側の砥石、若しくは前記外周
側の砥石で研削することを特徴とする。SUMMARY OF THE INVENTION In order to achieve the above-mentioned object, the present invention presses a rotating cup-shaped grindstone against the surface of a work piece supported by a work piece support table, and In the surface grinding method for grinding the surface, the cup-shaped grindstone is divided into two in the circumferential direction to integrally form the grindstone on the inner peripheral side and the grindstone on the outer peripheral side, and the grindstone on the inner peripheral side and the outer peripheral side. Of the grindstone of different grain size, the tilt angle of the cup-shaped grindstone with respect to the surface of the workpiece is changed, the surface of the workpiece is the grindstone on the inner peripheral side, or the grindstone on the outer peripheral side. It is characterized by grinding with.
【０００６】[0006]
【作用】本発明によれば、被加工物を被加工物支持テー
ブルに保持した後、カップ型砥石を被加工物の表面に対
して所定の角度に傾斜させると共に回転させ、先ず、例
えば粒度の粗い外周側の砥石で被加工物の表面を研削し
荒加工する。そして、荒加工終了後、カップ型砥石の被
加工物の表面に対する傾斜角度を変えて粒度の細かい内
周側の砥石で被加工物の表面を研削し仕上げ加工する。According to the present invention, after the workpiece is held on the workpiece support table, the cup-shaped grindstone is tilted and rotated at a predetermined angle with respect to the surface of the workpiece, and first, for example, the grain size is changed. Roughening is performed by grinding the surface of the work piece with a rough whetstone on the outer peripheral side. Then, after the rough machining is finished, the inclination angle of the cup-shaped grindstone with respect to the surface of the workpiece is changed, and the surface of the workpiece is ground and finished by the grindstone on the inner peripheral side having a fine grain size.
【０００７】[0007]
【実施例】以下添付図面に従って本発明に係る表面研削
方法の好ましい実施例を詳説する。図１は本発明に係る
表面研削方法が適用されたウェーハ表面研削装置の実施
例を示す要部構造図である。同図に示す表面研削装置
は、半導体ウェーハ１０を保持するテーブル１２と、半
導体ウェーハ１０の表面を研削する砥石１４とを備えて
いる。前記テーブル１２は、その上面に真空吸着部が形
成されており、この真空吸着部によって半導体ウェーハ
１０が研削面１０Ａを上方に向けて支持される。また、
テーブル１２の下部にはスピンドル１６が固着され、こ
のスピンドル１６には図示しないモータが連結される。
前記テーブル１２は、前記モータからの回転力がスピン
ドル１６を介して伝達されることにより所定の速度で回
転することができる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of the surface grinding method according to the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a structural diagram of a main part showing an embodiment of a wafer surface grinding apparatus to which a surface grinding method according to the present invention is applied. The surface grinding apparatus shown in the figure includes a table 12 for holding the semiconductor wafer 10 and a grindstone 14 for grinding the surface of the semiconductor wafer 10. A vacuum suction portion is formed on the upper surface of the table 12, and the semiconductor wafer 10 is supported by the vacuum suction portion with the grinding surface 10A facing upward. Also,
A spindle 16 is fixed to the lower portion of the table 12, and a motor (not shown) is connected to the spindle 16.
The table 12 can be rotated at a predetermined speed by transmitting the rotational force from the motor through the spindle 16.
【０００８】前記砥石１４は、カップ型に形成されて砥
石軸１８の下部に固着される。砥石１４は、砥石軸１８
に連結されている図示しないモータの回転力によって回
転駆動されると共に、図示しない昇降移動機構により昇
降移動される。従って、砥石１４を前記モータで回転さ
せると共に昇降移動機構で下降させて半導体ウェーハ１
０の表面に押し付け、そして、テーブル１２を回転させ
ると半導体ウェーハ１０の表面が研削される。また、砥
石１４は、砥石軸１８に連結されている図示しない揺動
機構によって砥石軸１８の軸心１９を中心に揺動され
る。The grindstone 14 is formed in a cup shape and fixed to the lower part of the grindstone shaft 18. The grindstone 14 is the grindstone shaft 18
It is rotationally driven by the rotational force of a motor (not shown) connected to the motor and is moved up and down by an up / down moving mechanism (not shown). Therefore, the grindstone 14 is rotated by the motor and is lowered by the elevating / lowering mechanism to move the semiconductor wafer 1
The surface of the semiconductor wafer 10 is ground by pressing it against the surface of 0 and rotating the table 12. Further, the grindstone 14 is swung about an axis 19 of the grindstone shaft 18 by a swinging mechanism (not shown) connected to the grindstone shaft 18.
【０００９】ところで、前記砥石１４は図２に示すよう
に、円周方向に二分割されて内周側の砥石２０と外周側
の砥石２２とが一体に形成されている。前記内周側の砥
石２０は、精研用の粒度の細かい砥石（例えば、♯１５
００）であり、また、前記外周側の砥石２２は、荒研用
の粒度の粗い砥石（例えば、♯８００）である。従っ
て、本実施例の砥石１４は、同一の砥石軸１８に、粒度
の異なる二種類の砥石２０、２２が一体に設けられてい
る。By the way, as shown in FIG. 2, the grindstone 14 is divided into two in the circumferential direction, and the grindstone 20 on the inner peripheral side and the grindstone 22 on the outer peripheral side are integrally formed. The grindstone 20 on the inner peripheral side is a grindstone with a fine grain size (for example, # 15) for precision polishing.
00), and the grindstone 22 on the outer peripheral side is a grindstone with a coarse grain size for rough polishing (for example, # 800). Therefore, in the grindstone 14 of the present embodiment, two kinds of grindstones 20 and 22 having different grain sizes are integrally provided on the same grindstone shaft 18.
【００１０】次に、前記砥石１４による半導体ウェーハ
１０の研削方法について説明する。図３は、半導体ウェ
ーハ１０と砥石１４との位置関係を示す模式図であり、
図中大径の円は半導体ウェーハ１０を示し図中小径の円
は砥石１４を示す。また、同図に示す点Ｏ1 は半導体ウ
ェーハ１０の中心で、点Ｏ2 は砥石１４の中心である。Next, a method of grinding the semiconductor wafer 10 with the grindstone 14 will be described. FIG. 3 is a schematic diagram showing the positional relationship between the semiconductor wafer 10 and the grindstone 14.
The large diameter circle in the figure indicates the semiconductor wafer 10, and the small diameter circle in the figure indicates the grindstone 14. The point O 1 shown in the figure is the center of the semiconductor wafer 10 and the point O 2 is the center of the grindstone 14.
【００１１】同図は、砥石軸の軸心１９をテーブルのテ
ーブル面１２Ａに直交する軸２３に対して平行に設定し
た場合における図であり、この場合、半導体ウェーハ１
０の回転方向が時計回り方向にθ°回転したとすると、
図中Ｌ1 −Ｌ1 線上で示す斜線部分の半導体ウェーハ１
０の研削面１０Ａ1 は、砥石１４の外側から内側に向け
て加工されることにより外側の砥石２２で研削され、そ
して図中Ｌ2 −Ｌ2 線上で示す斜線部分の半導体ウェー
ハ１０の研削面１０Ａ2 は、砥石１４の内側から外側に
向けて加工されることにより内側の砥石２０で研削され
ることになる。This figure shows a case where the axis 19 of the grindstone shaft is set parallel to the axis 23 orthogonal to the table surface 12A of the table. In this case, the semiconductor wafer 1
If the rotation direction of 0 is rotated by θ ° in the clockwise direction,
The semiconductor wafer 1 in the hatched portion shown on the L 1 -L 1 line in the figure
Grinding surface 10A 1 0, is ground by being machined towards the outside of the grinding wheel 14 on the inside with the outside of the wheel 22, and the grinding surface of the semiconductor wafer 10 of the hatched portion shown in the figure L 2 -L 2 lines 10A 2 is ground from the inner side of the grindstone 14 toward the outer side and is ground by the inner grindstone 20.
【００１２】そこで、このような砥石１４の特徴を利用
して、半導体ウェーハ１０の研削面１０Ａを荒研する場
合には図４に示すように、砥石軸の軸心１９をテーブル
面１２Ａに直交する軸２３に対して図中矢印Ａ方向に所
定角度傾けて砥石１４を半導体ウェーハ１０の研削面１
０Ａに押し付ける。この時、砥石軸の軸心１９はＡ方向
に傾けられているので、図中Ｌ1 −Ｌ1 線上で示す斜線
部分１０Ａ1 に荒研用の砥石２２のみが押し付けられ
（図４中Ｌ2 −Ｌ2 線上では砥石２０が研削面１０Ａか
ら浮いた状態となっている）、これにより研削面１０Ａ
が砥石２２によって加工される。Therefore, when the grinding surface 10A of the semiconductor wafer 10 is roughly ground by utilizing the characteristics of the grindstone 14 as shown in FIG. 4, the axis 19 of the grindstone shaft is orthogonal to the table surface 12A. The grindstone 14 is tilted at a predetermined angle in the direction of arrow A in the drawing with respect to the axis 23 to
Press on 0A. At this time, since the axis 19 of the grindstone shaft is tilted in the direction A, only the grindstone 22 for rough polishing is pressed against the shaded portion 10A 1 shown on the line L 1 -L 1 in the figure (L 2 in FIG. 4). On the -L 2 line, the grindstone 20 is in a state of floating from the ground surface 10A).
Is processed by the grindstone 22.
【００１３】次に、半導体ウェーハ１０の研削面１０Ａ
を精研する場合について図５を参照しながら説明する。
先ず、砥石軸の軸心１９をテーブル面１２Ａに直交する
軸２３に対して図中矢印Ｂ方向に所定角度傾けて砥石１
４を半導体ウェーハ１０の研削面１０Ａに押し付ける。
この時、砥石軸の軸心１９はＢ方向に傾けられているの
で、図中Ｌ2 −Ｌ2 線上で示す斜線部分１０Ａ2 に精研
用の砥石２０のみが押し付けられ（図５中Ｌ1 −Ｌ1 線
上では砥石２２が研削面１０Ａから浮いた状態となって
いる）、これにより研削面１０Ａが砥石２０によって加
工される。Next, the ground surface 10A of the semiconductor wafer 10
The case of performing precise polishing will be described with reference to FIG.
First, the grindstone 1 with the axis 19 of the grindstone shaft tilted at a predetermined angle in the direction of arrow B in the drawing with respect to the axis 23 orthogonal to the table surface 12A.
4 is pressed against the ground surface 10A of the semiconductor wafer 10.
At this time, since the axis 19 of the grindstone shaft is tilted in the B direction, only the grinding stone 20 for precision polishing is pressed against the shaded portion 10A 2 shown on the line L 2 -L 2 in the figure (L 1 in FIG. 5). On the -L 1 line, the grindstone 22 is in a state of floating from the ground surface 10A), whereby the grindstone 10A is processed by the grindstone 20.
【００１４】従って、本実施例の表面研削方法によれ
ば、カップ型砥石１４を円周方向に二分割して内周側の
砥石２０と外周側の砥石２２とを粒度の異なる砥石に形
成し、そして、カップ型砥石１４の半導体ウェーハ１０
の研削面１０Ａに対する傾斜角度を変えて、研削面１０
Ａを荒加工、仕上げ加工するようにしたので、回転駆動
機構を各々の砥石に必要な従来の研削装置と比較して装
置の小型化が可能になり、また半導体ウェーハ１０を移
動させないで荒加工、仕上げ加工を行うことができる。Therefore, according to the surface grinding method of the present embodiment, the cup-shaped grindstone 14 is divided into two in the circumferential direction to form the grindstone 20 on the inner peripheral side and the grindstone 22 on the outer peripheral side into different grindstones. , And the semiconductor wafer 10 of the cup-shaped grindstone 14
Of the grinding surface 10A by changing the inclination angle of the grinding surface 10A with respect to the grinding surface 10A.
Since A is subjected to roughing and finishing, the rotation driving mechanism can be downsized as compared with the conventional grinding device required for each grindstone, and the roughing can be performed without moving the semiconductor wafer 10. , Finishing can be performed.
【００１５】本実施例では、荒加工と仕上げ加工とをＡ
方向、Ｂ方向に角度を変えて加工するように説明した
が、例えば傾きを図４のＡ方向のまま半導体ウェーハ１
０の回転方向を反時計回り方向に回転させれば、砥石２
０によって仕上げ加工することもできる。本実施例で
は、半導体ウェーハの表面研削方法について説明した
が、ハードディスクの表面研削方法にも適用することが
できる。In this embodiment, the roughing process and the finishing process are
Although it has been described that the processing is performed by changing the angle in the direction B and the direction B, for example, the inclination is kept in the direction A in FIG.
If you rotate the rotation direction of 0 counterclockwise, the grindstone 2
It is also possible to finish by 0. Although the surface grinding method of the semiconductor wafer has been described in the present embodiment, it can be applied to the surface grinding method of the hard disk.
【００１６】本実施例では、精研用の砥石２０を内側
に、そして荒研用の砥石２２を外側に形成したが、これ
に限られるものではなく、その逆に設定しても良い。こ
の場合、半導体ウェーハ１０の回転方向を図３〜５中反
時計回り方向に回転させれば良い。In the present embodiment, the grinding stone 20 for fine polishing is formed on the inside and the grinding stone 22 for rough polishing is formed on the outside, but the invention is not limited to this, and the reverse may be set. In this case, the semiconductor wafer 10 may be rotated counterclockwise in FIGS.
【００１７】[0017]
【発明の効果】以上説明したように本発明に係る表面研
削方法によれば、カップ型砥石を円周方向に二分割して
内周側の砥石と外周側の砥石とを一体に形成すると共
に、内周側の砥石と外周側の砥石とを粒度の異なる砥石
に形成し、カップ型砥石の被加工物の表面に対する傾斜
角度を変えて、被加工物の表面を内周側の砥石、若しく
は外周側の砥石で研削するようにしたので、研削装置の
小型化が可能で、且つ被加工物を移動させないで被加工
物の表面を粒度の異なる二種類の砥石で研削加工するこ
とができる。As described above, according to the surface grinding method of the present invention, the cup-shaped grindstone is divided into two in the circumferential direction to integrally form the grindstone on the inner peripheral side and the grindstone on the outer peripheral side. , Forming a whetstone on the inner circumference side and a whetstone on the outer circumference side into whetstones having different grain sizes, changing the inclination angle of the cup-shaped grindstone with respect to the surface of the work piece, and the surface of the work piece on the inner circumference side, or Since the grinding is performed with the grindstone on the outer peripheral side, the grinding apparatus can be downsized, and the surface of the work can be ground with two kinds of grindstones having different grain sizes without moving the work.
【図１】本発明に係る表面研削方法が適用されたウェー
ハ表面研削装置の要部構造図FIG. 1 is a structural diagram of a main part of a wafer surface grinding apparatus to which a surface grinding method according to the present invention is applied.
【図２】砥石の拡大断面図[Fig. 2] Enlarged sectional view of the grindstone
【図３】半導体ウェーハと砥石との位置関係を示す模式
図FIG. 3 is a schematic diagram showing a positional relationship between a semiconductor wafer and a grindstone.
【図４】荒加工を行う場合の半導体ウェーハと砥石との
位置関係を示す模式図FIG. 4 is a schematic diagram showing a positional relationship between a semiconductor wafer and a grindstone when rough machining is performed.
【図５】仕上げ加工を行う場合の半導体ウェーハと砥石
との位置関係を示す模式図FIG. 5 is a schematic diagram showing a positional relationship between a semiconductor wafer and a grindstone when finishing is performed.
１０…半導体ウェーハ １２…テーブル １４…砥石 １８…砥石軸 ２０…精研用砥石 ２２…荒研用砥石 DESCRIPTION OF SYMBOLS 10 ... Semiconductor wafer 12 ... Table 14 ... Grinding stone 18 ... Grinding stone axis 20 ... Precision grinding grindstone 22 ... Rough grinding grindstone
Claims (1)
物の表面に、回転するカップ型砥石を押し付けて該被加
工物の表面を研削する表面研削方法に於いて、 前記カップ型砥石を円周方向に二分割して内周側の砥石
と外周側の砥石とを一体に形成すると共に、内周側の砥
石と外周側の砥石とを粒度の異なる砥石に形成し、該カ
ップ型砥石の前記被加工物の表面に対する傾斜角度を変
えて、該被加工物の表面を前記内周側の砥石、若しくは
前記外周側の砥石で研削することを特徴とする表面研削
方法。1. A surface grinding method in which a rotating cup-shaped grindstone is pressed against the surface of a workpiece supported by a workpiece support table to grind the surface of the workpiece. While dividing into two in the circumferential direction to integrally form a grindstone on the inner circumference side and a grindstone on the outer circumference side, the grindstone on the inner circumference side and the grindstone on the outer circumference side are formed to have different grain sizes, and the cup-shaped grindstone The surface grinding method is characterized in that the inclination angle with respect to the surface of the workpiece is changed, and the surface of the workpiece is ground by the grindstone on the inner peripheral side or the grindstone on the outer peripheral side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14333695A JPH08336741A (en) | 1995-06-09 | 1995-06-09 | Method of grinding surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14333695A JPH08336741A (en) | 1995-06-09 | 1995-06-09 | Method of grinding surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08336741A true JPH08336741A (en) | 1996-12-24 |
Family
ID=15336421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14333695A Pending JPH08336741A (en) | 1995-06-09 | 1995-06-09 | Method of grinding surface |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08336741A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG86364A1 (en) * | 1999-01-06 | 2002-02-19 | Tokyo Seimitsu Co Ltd | Planarization apparatus and method |
| JP2005319533A (en) * | 2004-05-07 | 2005-11-17 | Koyo Mach Ind Co Ltd | Surface grinding method, and apparatus therefor |
| JP2010137338A (en) * | 2008-12-12 | 2010-06-24 | Disco Abrasive Syst Ltd | Method and device for grinding wafer |
| JP2018531503A (en) * | 2015-08-14 | 2018-10-25 | エム キューブド テクノロジーズ， インコーポレイテッド | Machine with highly controllable processing tools for finishing workpieces |
| CN115070512A (en) * | 2022-03-11 | 2022-09-20 | 北京爱瑞思光学仪器有限公司 | Double-polishing process and device for germanium wafer and germanium wafer |
| TWI828750B (en) * | 2018-09-13 | 2024-01-11 | 日商岡本工作機械製作所股份有限公司 | Substrate grinding device and substrate grinding method |
-
1995
- 1995-06-09 JP JP14333695A patent/JPH08336741A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG86364A1 (en) * | 1999-01-06 | 2002-02-19 | Tokyo Seimitsu Co Ltd | Planarization apparatus and method |
| US6431964B1 (en) | 1999-01-06 | 2002-08-13 | Tokyo Seimitsu Co., Ltd. | Planarization apparatus and method |
| US6910943B2 (en) | 1999-01-06 | 2005-06-28 | Tokyo Seimitsu Co., Ltd. | Planarization apparatus and method |
| JP2005319533A (en) * | 2004-05-07 | 2005-11-17 | Koyo Mach Ind Co Ltd | Surface grinding method, and apparatus therefor |
| JP2010137338A (en) * | 2008-12-12 | 2010-06-24 | Disco Abrasive Syst Ltd | Method and device for grinding wafer |
| JP2018531503A (en) * | 2015-08-14 | 2018-10-25 | エム キューブド テクノロジーズ， インコーポレイテッド | Machine with highly controllable processing tools for finishing workpieces |
| TWI828750B (en) * | 2018-09-13 | 2024-01-11 | 日商岡本工作機械製作所股份有限公司 | Substrate grinding device and substrate grinding method |
| CN115070512A (en) * | 2022-03-11 | 2022-09-20 | 北京爱瑞思光学仪器有限公司 | Double-polishing process and device for germanium wafer and germanium wafer |
| CN115070512B (en) * | 2022-03-11 | 2024-04-26 | 北京爱瑞思光学仪器有限公司 | Double-polishing process and device for germanium wafer and germanium wafer |
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