JPH11347953A - Wafer chamfering grinding wheel - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an economical grinding wheel for chamfering a wafer. SOLUTION: This wafer chamfering grinding wheel 10 is configured so that a metal bond whetstone 12 and resin-bond whetstone 14 are installed coaxially, wherein the resin-bond whetstone 14 is fixed by screw 20 to the metal-bond whetstone 12. When the resin-bond whetstone 14 has worn, the screw 20 is set off and the resin-bond whetstone 14 is removed from the metal-bond whetstone 12 to be replaced with a new one, and processing is resumed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a wafer chamfering grindstone, and more particularly to a wafer chamfering grindstone for chamfering a peripheral edge of a wafer made of a highly brittle material such as silicon or ceramic.

[0002]

2. Description of the Related Art A metal bond whetstone using a metal bond as a bonding material and a resin bond whetstone using a resin bond as a bonding material are mainly used as grinding wheels for chamfering a wafer such as silicon which is a highly brittle material. Have been. A metal bond grindstone has a high rigidity and a high abrasive grain holding power, and thus has an advantage that the life of the grindstone is long, but has a disadvantage that a ground surface becomes rough. On the other hand, resin-bonded grindstones have the advantage that they have little impact on the machined surface due to their elasticity and have high accuracy of the ground surface, but they have the disadvantage that their abrasive grain holding power is not high and their life is short. Thus, both whetstones have contradictory properties.

For this reason, conventionally, rough chamfering has been performed with a metal bond grindstone and finish chamfering with a resin bond grindstone. The rough chamfering and the finish chamfering are performed by different chamfering devices.

[0004]

However, if rough chamfering and finishing are carried out by separate chamfering devices as in the prior art, there is a disadvantage that it takes time and labor to transport between the devices and the processing efficiency is poor. In addition, there is a disadvantage that an installation space for the apparatus is required and the cost is increased.

[0005] In order to solve such a drawback, a chamfering grinding wheel in which a metal bond grinding wheel and a resin bond grinding wheel are coaxially arranged and integrated has been proposed. Since the bond whetstone must also be replaced, there is a drawback that waste is increased and as a result, the running cost is increased. The present invention has been made in view of such circumstances, and has as its object to provide an economical wafer chamfering grindstone.

[0006]

In order to achieve the above object, the present invention provides a wafer chamfering grindstone for chamfering a peripheral edge of a wafer, wherein a metal bond grindstone portion and a resin bond grindstone portion are coaxially arranged. A wafer chamfering whetstone, wherein the resin bond whetstone part is detachable from the metal bond whetstone part.

According to the present invention, when the resin bond grindstone is worn, only the resin bond grindstone is removed from the metal bond grindstone and replaced with a new one. This eliminates the need to dispose of the metal bond grindstone in accordance with the life of the resin bond grindstone, thereby enabling economical chamfering.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a wafer chamfering grindstone according to the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a front partial sectional view showing a configuration of an embodiment of a wafer chamfering grindstone according to the present invention.

As shown in FIG. 1, a wafer chamfering grindstone 10 according to the present embodiment has a metal bond grindstone 12 and a resin bond grindstone 14 arranged coaxially.
The metal bond whetstone 12 is a whetstone using a metal bond as a bonding material, and is fixed to an outer peripheral portion of the wheel 16. A groove 12 is previously formed on the outer periphery of the metal bond grindstone 12.
A is formed, and the groove 12A is formed in a shape that matches the chamfered shape required for the wafer.

On the other hand, the resin bond grindstone 14 is a grindstone using resin as a binder, and is fixed to the outer periphery of the mounting wheel 18. The mounting wheel 18 is formed in a donut shape, and the inner diameter thereof is formed to be the same as the outer diameter of the mounting portion 16 </ b> A protruding from the upper surface of the wheel 16. The resin bond grindstone 14 is mounted on the metal bond grindstone 12 by fitting the mounting wheel 18 into the mounting portion 16A.

The wheel 16 has screw holes 16B, 16B,... Formed at 90 ° intervals on concentric circles, and the mounting wheel 18 similarly has through holes 18B, 18B at 90 ° intervals on concentric circles. Are formed (FIG. 1).
Then only one place is shown). The resin bond grindstone 14 attached to the metal bond grindstone 12 has the screw holes 16B, 16B.
After the positions of the through holes 18A, 18A,... Are aligned, the screws 20, 20,.
Are screwed together and fastened.

The wafer chamfering grindstone 10 of the present embodiment configured as described above is mounted on a grindstone spindle of a wafer chamfering device, and then truing is performed to form a groove on the outer periphery of the resin bond grindstone 14. I do. As described above, by forming a groove by performing truing after mounting on the spindle, even when the resin bond grindstone 14 is not mounted coaxially with the metal bond grindstone 12, the groove is formed on the metal bond grindstone 12. No center runout occurs during machining,
The accuracy of the ground surface can be improved.

The wafer chamfering grindstone 10 in which the grooves are formed in the resin bond grindstone 14 is thereafter provided for processing.
Generally, the life of the resin-bonded grindstone 14 is shorter than that of the metal-bonded grindstone. Therefore, when the resin bond grindstone 14 is worn, only the resin bond grindstone 14 is replaced as follows. First, the wafer chamfering grindstone 10 is removed from the spindle. Next, the screw 20 fixing the resin bond grindstone 14 is removed, and the worn resin bond grindstone 14 is removed from the metal bond grindstone 12. Then, a new resin bond whetstone 14 is mounted and fixed with screws 20.

The wafer chamfering whetstone 10 having the resin bond whetstone 14 replaced is mounted again on a whetstone spindle of the wafer chamfering device, and truing is performed to form a groove on the outer periphery of the resin bond whetstone 14. As described above, in the wafer chamfering grindstone 10 of the present embodiment, when the resin bond grindstone 14 is worn, only the resin bond grindstone 14 can be replaced. There is no need to discard the metal bond whetstone 12, and the wafer can be chamfered economically without waste.

In the wafer chamfering grindstone 10 of the present embodiment, the grooves 1 formed on the metal bond grindstone 12 are formed.
Although 2A has only one stage, two or more stages may be formed as shown in FIG. Further, in the wafer chamfering grindstone 10 of the present embodiment, a resin bond grindstone 14 in which a groove is not formed in advance is used.
As shown in FIG. 2, those having grooves 14 </ b> A formed in advance may be used. In the example shown in the figure, the grooves 14A, 14A are formed in two stages, but the number is not limited to this.

Further, the metal bond grinding wheel 12 and the resin bond grinding wheel 14 of the wafer chamfering grinding wheel 10 according to the present embodiment.
Are of a single particle size, but may be formed by stacking a plurality of particles having different particle sizes in a plurality of stages. For example, in the wafer chamfering grindstone 10 shown in FIG. 3, the lower metal bond grindstone 12a is formed of a grindstone having a grain size of 800, and the upper metal bond grindstone 12b is formed of a grindstone having a grain size of 1500.

Further, in the wafer chamfering grindstone 10 of the present embodiment, the groove shape is formed in a shape that matches the chamfering shape required for the wafer. However, the present invention is not limited to this, and as shown in FIG. The grooves 12A and 14A having a shape may be formed. In addition, the wafer chamfering grindstone 10 according to the present embodiment.
In the above, the resin bond grindstone 14 is arranged in the upper stage and the metal bond grindstone 12 is arranged in the lower stage, but the arrangement may be reversed. If the resin bond grindstone 14 is arranged on the upper stage as in the present embodiment, it is possible to prevent the resin bond grindstone 14 from being clogged by silicon grinding powder (sludge).

Next, a method of chamfering a wafer using the wafer chamfering grindstone according to the present invention will be described. First,
The configuration of a wafer chamfering apparatus to which the wafer chamfering grindstone according to the present invention is applied will be described. 5 and 6 are a side view and a plan view showing the configuration of the wafer chamfering apparatus, respectively. 7 and 8 are an AA cross-sectional view and a BB cross-sectional view of FIG. 5, respectively. As shown in FIGS. 5 and 6, the wafer chamfering apparatus 40 mainly includes a wafer feed unit 42, an outer peripheral processing unit 44, and a notch processing unit 46.

First, the configuration of the wafer feeding unit 42 will be described. As shown in FIG. 5, FIG. 6, and FIG. 7, a pair of Y-axis guide rails 52 are laid at predetermined intervals on a base plate 50 disposed horizontally. A Y-axis table 56 is slidably supported on the pair of Y-axis guide rails 52 via Y-axis linear guides 54, 54,.

The nut member 5 is provided on the lower surface of the Y-axis table 56.
The nut member 58 is fixed to the pair of Y members.
It is screwed to a Y-axis ball screw 60 disposed between the axis guide rails 52, 52. Both ends of the Y-axis ball screw 60 are rotatably supported by bearing members 62, 62 disposed on the base plate 50, and one end of the Y-axis ball screw 60 is provided on one of the bearing members 62. Motor 64
Output shafts are connected. The Y-axis ball screw 60 is rotated by driving the Y-axis motor 64. As a result, the Y-axis table 56
Slide horizontally along 2. Hereinafter, the direction in which the Y-axis table 56 slides is referred to as the Y-axis direction.

5 and 6 on the Y-axis table 56.
And a pair of Y-axis guide rails 5 as shown in FIG.
A pair of X-axis guide rails 6 orthogonal to 2 and 52
6, 66 are laid. An X-axis table 70 is slidably supported on the pair of X-axis guide rails 66 via X-axis linear guides 68, 68,.

A nut member 7 is provided on the lower surface of the X-axis table 70.
The nut member 72 is fixed to the pair of Xs.
It is screwed into an X-axis ball screw 74 provided between the axis guide rails 66,66. Both ends of the X-axis ball screw 74 are rotatably supported by bearing members 76, 76 disposed on the X-axis table 70, and one end thereof is provided on one bearing member 76. The output shaft of the X-axis motor 78 is connected. The X-axis ball screw 74 is rotated by driving the X-axis motor 78. As a result, the X-axis table 70 is moved to the X-axis guide rails 66,6.
Slide horizontally along 6. Hereinafter, the direction in which the X-axis table 70 slides is referred to as the X-axis direction.

As shown in FIGS. 5 and 6, a Z-axis base 80 is vertically provided on the X-axis table 70, and a pair of Z-axis guide rails 8 are provided on the Z-axis base 80.
2, 82 are laid at predetermined intervals. A Z-axis table 86 is slidably supported on the pair of Z-axis guide rails 82 via Z-axis linear guides 84, 84.

The nut member 8 is provided on the side of the Z-axis table 86.
The nut member 88 is fixed to the pair of Zs.
It is screwed into a Z-axis ball screw 90 provided between the axis guide rails 82,82. The Z-axis ball screw 90 has a bearing member 9 whose both ends are disposed on the Z-axis base 80.
2, 92, the lower end of which is connected to the output shaft of a Z-axis motor 94 provided on the lower bearing member 92. The Z-axis ball screw 90 is rotated by driving the Z-axis motor 94. As a result, the Z-axis table 86 slides vertically along the Z-axis guide rails 82. Hereinafter, the direction in which the Z-axis table 86 slides is referred to as a Z-axis direction.

On the Z-axis table 86, a θ-axis motor 9
6 are installed vertically. The output shaft of the θ-axis motor 96 is connected to a θ-axis shaft 98, and the wafer table 100 and the truer 30 are mounted on the θ-axis shaft 98. The wafer table 100 holds the wafer W to be chamfered by vacuum suction,
It is rotated by driving the shaft motor 96.

The truer 30 is a tool for performing truing of the resin bond grindstone 14, and as shown in FIG. 9, a truing grindstone 34 is integrally fixed to an outer peripheral portion of a base metal 32 formed in a disk shape. It is configured.
The truing whetstone 34 is formed in the same cross-sectional shape as the shape of the groove 14A required for the resin bond whetstone 14, and is pressed against the outer peripheral portion of the resin bond whetstone 14 while rotating the truing whetstone 34. Thereby, a groove 14A is formed on the outer peripheral portion of the resin bond grindstone 14.

In the wafer feed unit 42 configured as described above, the wafer table 100 and the truer 30 are slid horizontally along the Y-axis direction by driving the Y-axis motor 64, and the X-axis motor 78 is moved. When driven, it slides horizontally along the X-axis direction. Then, by driving the Z-axis motor 94, Z
Slides vertically along the axial direction,
Is rotated around the θ axis.

Next, the configuration of the outer peripheral processing unit 44 will be described. As shown in FIGS. 5, 6, and 10, a gantry 102 is installed vertically on the base plate 50. An outer peripheral motor 104 is installed vertically on the gantry 102, and an outer peripheral spindle 106 is connected to an output shaft of the outer peripheral motor 104. The wafer chamfering grindstone 10 according to the present invention is mounted on the outer peripheral spindle 106.

The outer peripheral processing unit 44 is configured as described above. Hereinafter, a straight line that passes through the rotation center O of the wafer chamfering grindstone 10 and is parallel to the Y-axis guide rails 52, 52 is referred to as “Y axis”, and the X-axis guide rails 66, 66 pass through the rotation center O of the wafer chamfering grindstone 10. The straight line parallel to is referred to as “X axis”. Then, the rotation axis of the wafer chamfering grindstone 10 is referred to as “Z axis”.

Next, the configuration of the notch processing unit 46 will be described. As shown in FIGS. 5, 6 and 10, a column 110 is vertically arranged on a side portion of the gantry 102 along a rotation axis (Z axis) of the wafer chamfering grindstone 10. The lower end of the column 110 is supported on the side surface of the gantry 102, and the upper end thereof has a horizontal beam 110A.
Are integrally formed. A pair of bearing members 112, 112 are provided at the tip of the beam 102A, and an arm 116 is swingably supported by the bearing members 112, 112 via pins 114.

The notch motor 11 is provided at the tip of the arm 116.
8 is supported, and a notch spindle 120 is connected to the output shaft of the notch motor 118. And
This notch spindle 120 has a notch machining wheel 12
2 is attached. Here, the notch grinding wheel 122
Is composed of a grindstone 122A for rough grinding and a grindstone 122B for fine grinding stacked coaxially.
Grooves corresponding to the chamfered shape required for the wafer W are formed in 22A and 122B (not shown).

The arm 116 can be fixed by a lock means (not shown), and the arm 116 is horizontally held by fixing the lock means. When the arm 116 is held horizontally, the notch grinding wheel 122 is positioned on the Y axis. Next, the operation of the wafer chamfering device 40 configured as described above will be described.

First, the wafer chamfering grindstone 1 according to the present invention.
A method of mounting truing 0 on the wafer chamfering apparatus 40 and performing truing will be described. In the initial state, the wafer table 100 has its rotation axis θ positioned on the Y axis and the axis (Z
(Axis) from a predetermined distance. Further, it is positioned at a predetermined height with respect to the wafer chamfering grindstone 10 (origin position).

First, the operator operates the outer peripheral spindle 106.
, A wafer chamfering grindstone 10 is mounted. After the mounting, the operator issues a truing execution command to the wafer chamfering device 40. Wafer chamfering device 4 receiving this execution order
The control unit 0 (not shown) performs truing of the resin bond grindstone 14 as follows. First, the Z-axis motor 9
4 is driven, and the truer 30 rises by a predetermined amount along the Z-axis direction. As a result, as shown in FIG. 11A, the truer 30 is located at a predetermined groove processing position. This groove processing position is the same as the resin bond whetstone 14 of the wafer chamfering whetstone 10.
At the same height as the groove 14A to be formed.

Next, the outer peripheral motor 104 and the θ-axis motor 96
Is driven, and the wafer chamfering grindstone 10 and the truer 30 both start rotating at a high speed in the same direction. Next, the Y-axis motor 6
4 is driven, and the truer 30 moves on the Y-axis toward the wafer chamfering grindstone 10. Wafer chamfering whetstone 10
Is decelerated just before contacting the resin bond grindstone 14, moves at a slow speed as it is, and comes into contact with the outer peripheral surface of the resin bond grindstone 14. Even after this contact, the truer 30 moves slowly on the Y-axis. As a result, as shown in FIG. 11 (b), the outer peripheral surface of the resin bond grindstone 14 is ground by a small amount on the truing grindstone 34, and the groove is formed. 14A are formed.

As shown in FIG. 11B, the distance between the axis of the truer 30 and the wafer chamfering grindstone 10 is a predetermined distance L.
Stop when it reaches. Then, after the stop, FIG.
(C) As shown in FIG.
And returns to the groove processing position. As described above, the groove 14A is formed in the resin bond grindstone 14. Since the groove 14A thus formed is a perfect circle, no run-out occurs even when the groove is rotated at high speed, and the ground surface can be finished with high accuracy.

Next, as described above, the wafer chamfering grindstone 1
A method of chamfering a wafer W by the wafer chamfering device 40 to which the “0” is mounted will be described. In addition, in the wafer chamfering apparatus 40 of the present embodiment, both the wafer with the orientation flat and the wafer with the notch can be chamfered. Here, the case where the wafer with the notch is chamfered will be described.

First, the wafer W is placed on the wafer table 100. The placed wafer W is held on the wafer table 100 by vacuum suction. here,
Wafer W held on the wafer table 100, together with its center O _W is positioned on the rotational axis θ of the wafer table 100, the notch NO is positioned on the Y axis.
Further, it is located at the same height as the groove 12A of the metal bond grindstone 12. This position of the wafer W is referred to as an “outer peripheral rough chamfering reference position”.

When the wafer W is held by suction on the wafer table 100, chamfering of the wafer W is started. FIGS. 12A to 12F show a processing procedure of chamfering the wafer W. The chamfering of the wafer W is first performed from the rough chamfering of the circular portion C of the wafer W.

First, the outer peripheral motor 104 is driven, and the wafer chamfering grindstone 10 rotates. At the same time, the Y-axis motor 64 is driven, and the wafer W is
On the Y-axis toward. When the wafer W moves a predetermined distance, the driving of the Y-axis motor 64 is stopped, and as a result,
The circular portion C of the wafer W is the groove 12 of the metal bond grindstone 12.
Contact A.

When the circular portion C of the wafer W comes into contact with the metal bond grindstone 12, the θ-axis motor 96 is simultaneously driven, and the wafer W is rotated around the θ-axis. As a result, as shown in FIGS. 12A and 12B, the circular portion C of the wafer W is ground by the rotating metal bond grindstone 12 and roughened. The rotation about the θ axis is given a predetermined number of times.
Is stopped. This completes the rough chamfering of the circular portion C of the wafer W. The wafer W stops at the position where the chamfering process is started (the position where the wafer W comes into contact with the metal bond grindstone 12 first), and then moves on the Y axis in a direction away from the metal bond grindstone 12 by a predetermined amount. And it returns to the said outer periphery rough chamfering reference position.

With the above steps, the rough chamfering of the circumferential portion C of the wafer W is completed. Next, finish chamfering of the circular portion C of the wafer W is performed. When the wafer W returns to the outer peripheral rough chamfering reference position, the Z-axis motor 94 is driven, and the wafer table 100 is raised by a predetermined amount. As a result, the wafer W held on the wafer table 100 is positioned at the same height as the groove 14A of the resin bond grindstone 14. This position of the wafer W is referred to as an “outer peripheral finish chamfering reference position”.

Next, the Y-axis motor 64 is driven, and the wafer W moves on the Y-axis toward the resin bond grindstone 14. When the wafer W moves a predetermined distance, the driving of the Y-axis motor 64 is stopped, and as a result, the circular portion C of the wafer W comes into contact with the groove 14A of the resin bond grindstone 14. Wafer W
When the circular portion C of FIG. 7 contacts the groove 14A of the resin bond grindstone 14, the θ-axis motor 96 is driven at the same time, and the wafer W is rotated around the θ-axis. As a result,
As shown in FIGS. 12 (a) and 12 (b), the circular portion C of the wafer W is ground by a rotating resin bond grindstone 14 and finish chamfering is performed.

The rotation about the θ axis is given a predetermined number of times, after which the drive of the θ axis motor 96 is stopped. This allows
Finish chamfering of the circular portion C of the wafer W is completed.
The wafer W stops rotating at the position where the finish chamfering is started (the position where the wafer W comes into contact with the resin bond grindstone 14 first), and then moves on the Y-axis by a predetermined amount in a direction away from the resin bond grindstone 14 to finish the outer periphery. Return to the chamfer reference position. At the same time, the driving of the outer peripheral motor 104 is stopped,
The rotation of the wafer chamfering grindstone 10 stops.

With the above steps, the finish chamfering of the circular portion C of the wafer W is completed. Next, the notch N of the wafer W
Rough chamfering of O is performed. First, the Z-axis motor 94 is driven, and the wafer table 100 is raised by a predetermined amount.
As a result, the wafer W held on the wafer table 100 is positioned at the same height as the groove of the rough grinding notch grinding wheel 122A. Next, the θ-axis motor 96 is driven to rotate the wafer W by 180 °. As a result, the notch NO and the notch processing grindstone 122 are positioned so as to face each other. Next, X
The axis motor 78 is driven, and the wafer W moves by a predetermined amount in the X-axis direction. As a result, the position of the notch NO is shifted by a predetermined amount in the X-axis direction with respect to the rough grinding notch processing grindstone 122A. Hereinafter, the position of the wafer W is referred to as a “notch rough chamfering reference position”.

Next, the notch motor 118 is driven, and the notch grinding wheel 122 starts rotating. At the same time, Y
The axis motor 64 is driven, and the wafer W moves on the Y-axis toward the rough grinding notch grinding wheel 122A. When the wafer W moves a predetermined distance, the driving of the Y-axis motor 64 is stopped. As a result, as shown in FIG.
Notch corner NR is rough notch grinding wheel 122A
(Not shown).

When the notch corner NR of the wafer W comes into contact with the groove of the rough grinding notch grinding wheel 122A, the wafer W is simultaneously fed in the X-axis direction and the Y-axis direction, and the notch corner NR is chamfered. Will be In other words, the wafer W is fed along the shape of the notch corner NR so that the notch corner NR always contacts the notch grinding wheel 122. As a result, the notch corner NR of the wafer W is set to the notch grinding wheel 12 for rough grinding.
It is ground to 2A and roughened.

When the rough chamfering of the notch corner NR is completed, the wafer W is continuously fed in the X-axis direction and the Y-axis direction, and the notch NO is chamfered. That is, as shown in FIG. 12D, the wafer W is fed along the shape of the notch NO so that the notch NO always contacts the rough grinding notch processing grindstone 122A.
In the case of the figure, since the notch NO is formed in a V-shape, the wafer W moves so as to draw a V-shape along the shape of the V-shaped notch NO.

When the chamfering of the notch NO is completed, FIG.
As shown in (e), the contact point between the rough grinding notch grinding wheel 122A and the wafer W reaches the notch corner NR on the other side. When the contact point reaches the notch corner NR on the other side, the notch corner NR is chamfered continuously. That is, the feed in the X-axis direction and the feed in the Y-axis direction are given to the wafer W, and the wafer W moves along the shape of the notch corner NR so that the notch corner NR always contacts the rough grinding notch grinding wheel 122A. I do.
As a result, the notch corner NR of the wafer W is rough-chamfered.

When the chamfering of the notch corner NR on the other side is completed, the feeding of the wafer W is temporarily stopped. Then, from this state, the notch corner NR is turned in the opposite direction,
The notch NO and the notch corner NR on the other side are chamfered. By repeating the above operation a plurality of times as desired, the rough chamfering of the notch NO and the notch corner NR is completed.

When the rough chamfering of the notch NO is completed, the wafer W stops at the position where the chamfering of the notch NO is started, that is, the position shown in FIG. It moves in the direction away and returns to the notch rough chamfering reference position. With the above steps, the rough chamfering of the notch NO and the notch corner NR of the wafer W is completed. Next, finish chamfering of the notch NO and the notch corner NR of the wafer W is performed.

First, the Z-axis motor 94 is driven, and the wafer table 100 is raised by a predetermined amount. As a result, the wafer W held on the wafer table 100 has the same height as the groove of the notch grinding wheel 122B for fine polishing. This position of the wafer W is referred to as a “notch finish chamfer reference position”.
Next, the Y-axis motor 64 is driven, and the wafer W moves on the Y-axis toward the notch 122B for fine polishing. When the wafer W moves a predetermined distance, the driving of the Y-axis motor 64 is stopped. As a result, as shown in FIG.
Notch corner NR is notch grinding wheel 122B for fine polishing
(Not shown).

Hereinafter, similarly to the above-described rough chamfering processing,
By controlling the movement of the wafer W in the X-axis direction and the Y-axis direction,
Finish chamfering of the notch NO and the notch corner NR. When finish chamfering of wafer W is completed,
The wafer W stops rotating at the position where the chamfering is started (the position shown in FIG. 12C). Thereafter, the wafer W moves on the Y-axis by a predetermined amount in a direction away from the notch grinding wheel 122B for fine polishing, and returns to the notch finish chamfering reference position.
At the same time, the drive of the notch motor 118 is stopped, and the rotation of the notch grinding wheel 122 is stopped.

When the wafer W returns to the notch finish chamfering reference position, the wafer table 100 moves by a predetermined amount in the X-axis direction, and then descends by a predetermined amount in the Z-axis direction to return to the outer peripheral rough chamfering reference position. When the wafer table 100 returns to the outer periphery rough chamfering reference position, the suction of the wafer W by the wafer table 100 is released, and thereafter, the wafer W is transferred from the wafer table 100 to the next step by the transfer means (not shown). With the above series of steps, the chamfering of one wafer W is completed.

By the way, the resin-bonded grindstone 14 is worn by use, and when it is worn and reaches the use limit, it is replaced with a new one. That is, first, the wafer chamfering grindstone 10 is removed from the outer peripheral spindle 106. Then
Remove the screw 20 fixing the resin bond whetstone 14,
Resin bond whetstone 1 worn from metal bond whetstone 12
Remove 4. Then, a new resin bond whetstone 14 is mounted and fixed with screws 20.

The wafer chamfering grindstone 10 in which the resin bond grindstone 14 has been replaced is mounted on the outer peripheral spindle 106 again, and truing is performed to form a groove 14A on the outer periphery of the resin bond grindstone 14. As described above, when the resin bond grindstone 14 is worn, if only the resin bond grindstone 14 is replaced, the economical wafer W without waste can be obtained.
Can be chamfered.

[0057]

As described above, according to the wafer chamfering whetstone according to the present invention, the resin bond whetstone part can be removed from the metal bond whetstone part. For this reason, when the resin bond grindstone portion is worn, the resin bond grindstone portion can be removed from the metal bond grindstone portion and only the resin bond grindstone portion can be discarded. Therefore, economical chamfering can be performed without waste.

[Brief description of the drawings]

FIG. 1 is a front partial sectional view of an embodiment of a wafer chamfering grindstone according to the present invention.

FIG. 2 is a front partial sectional view of another embodiment of the wafer chamfering grindstone according to the present invention.

FIG. 3 is a front partial sectional view of another embodiment of the wafer chamfering grindstone according to the present invention.

FIG. 4 is a front partial sectional view of another embodiment of the wafer chamfering grindstone according to the present invention.

FIG. 5 is a side view showing a configuration of a wafer chamfering apparatus.

FIG. 6 is a plan view showing a configuration of a wafer chamfering apparatus.

FIG. 7 is a sectional view taken along line AA of FIG. 5;

8 is a sectional view taken along line BB of FIG. 5;

FIG. 9 is a partial front sectional view showing the configuration of a truer.

FIG. 10 is a front view showing a configuration of an outer peripheral processing unit and a notch processing unit.

FIG. 11 is an explanatory diagram of a truing method of a wafer chamfering grindstone.

FIG. 12 is an explanatory view of a method of chamfering a notched wafer.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Wafer chamfering grindstone 12 ... Metal bond grindstone 12A ... Groove 14 ... Resin bond grindstone 14A ... Groove 16 ... Wheel 18 ... Mounting wheel 20 ... Screw 40 ... Wafer chamfering device 42 ... Wafer feeding unit 44 ... Outer periphery processing unit 46 ... Notch Processing unit 100: Wafer table 122: Notch processing whetstone W: Wafer

Claims (2)

[Claims] 1. A wafer chamfering grindstone for chamfering a peripheral edge of a wafer, wherein the metal bond grindstone portion and the resin bond grindstone portion are coaxially arranged, wherein the resin bond grindstone portion is formed of the metal bond grindstone. A wafer chamfering whetstone, which is detachable from a whetstone part. 2. The wafer chamfering wheel according to claim 1, wherein the resin bond wheel portion is formed with a chamfering groove for a wafer by truing after being attached to the metal bond wheel portion.