CN107481960A - A kind of measurement, calibrating installation and its method for square wafer offset - Google Patents
A kind of measurement, calibrating installation and its method for square wafer offset Download PDFInfo
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- CN107481960A CN107481960A CN201710695242.0A CN201710695242A CN107481960A CN 107481960 A CN107481960 A CN 107481960A CN 201710695242 A CN201710695242 A CN 201710695242A CN 107481960 A CN107481960 A CN 107481960A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
Abstract
The present invention discloses a kind of measurement, calibrating installation and its method for square wafer offset, and measurement apparatus includes turntable, laser sensor and the controller being connected with laser sensor；Laser sensor includes transmitting terminal and receiving terminal, and turntable includes rotatable pedestal and circular wafer carrying bench；When pedestal drives wafer carrying bench rotation, the chip to be measured on wafer carrying bench is cut or reflected to the light of laser transmitter projects so that the output signal of laser sensor changes, the time that the output signal of controller recording laser sensor changes.The present invention only needs a turntable and at least one set of laser sensor, the time to be changed by the angular velocity of rotation and sensor output signal that record turntable, the measurement and calibration of square shaped chip offset can be achieved, it is simple in construction, it is easily achieved, while installing space can be saved and reduce debugging difficulty.
Description
Technical field
The present invention relates to solar cell manufacturing field, more particularly to a kind of measurement of square wafer offset, calibration cartridge
Put and its method.
Background technology
In solar cell manufacturing field, predetermined position in specific chamber much is required for the technique of chip processing
Progress is put, so in the transmitting procedure of chip, it is necessary to assure chip is precisely placed the precalculated position of chamber.It is if brilliant
Piece is offset during transmission, then manipulator exactly can not transmit chip to precalculated position.
In the prior art, detected more using position skew of the photodetector to chip, if chip is offset,
Then according to offset come the position of calibration chip.Chinese patent CN101832757A discloses a kind of detecting offset position of wafer
Method, several detectors are set in wafer periphery, detect the sensing point on the Waffer edge of precalculated position and chip skew back
Sensing point on edge, the deviation post of chip is determined by calculating the offset of center wafer point.Chinese patent
CN105762089A discloses measurement and the method for adjustment of a kind of wafer position deviation, on the border of tray upper surface and mounting groove
Viewing area is defined, collection pallet is in the realtime graphic of viewing area, and the light reflectivity difference based on chip and pallet is to real-time
Image carries out gray proces, obtains and calculates centre deviation desired position information, recycle the positional information to be calculated, obtains
The departure at center.Above two method is all used for the offset for measuring Circular wafer, it is impossible to be used in measures the inclined of square wafer
Shifting amount, accordingly, it is desirable to provide measurement and the collimation technique of a kind of square wafer offset.
The content of the invention
The technical problem to be solved by the invention is to provide a kind of measurement of square wafer offset, calibrating installation and its
Method, solve the problems, such as to influence later processing operation because square wafer shifts in transmitting procedure.
In order to solve the above technical problems, the invention provides a kind of measurement apparatus of square wafer offset, measurement dress
Put including turntable, laser sensor and the controller being connected with laser sensor；Wherein, laser sensor includes transmitting terminal
And receiving terminal, turntable include rotatable pedestal and circular wafer carrying bench；When pedestal drives wafer carrying bench rotation, chip carries
Chip to be measured on platform is cut or reflected to the light of laser transmitter projects so that the output signal of laser sensor
Change, the time that the output signal of controller recording laser sensor changes.
Preferably, above-mentioned laser sensor is correlation type laser sensor, the transmitting terminal of correlation type laser sensor and is connect
Receiving end is arranged symmetrically in the upper and lower both sides of wafer carrying bench；The diameter of wafer carrying bench is less than the length of side of chip to be measured, and sensor
Meet formula with the distance in the center of circle of wafer carrying bench：Wherein, RsFor correlation type laser transmitter projects
The intersection point of light and chip to be measured is to the distance in the center of circle of wafer carrying bench, LwFor the length of side of chip to be measured.
Alternatively, laser sensor is reflection-type laser sensor, and reflection sensor is located above the side of wafer carrying bench.
Preferably, the measurement apparatus also includes high-precision servo motor, and high-precision servo motor driven pedestal and chip carry
Platform is rotated by the angular speed of setting.
Further, present invention also offers a kind of calibrating installation of square wafer offset, the calibrating installation to include upper
Measurement apparatus, in addition to manipulator are stated, controller is according to the offset of the chip to be measured drawn, and control machinery hand is to chip to be measured
Carry out position compensation.
Further, present invention also offers a kind of measuring method of square wafer offset to comprise the following steps：
Demarcating steps：Reference position reference wafer being placed on wafer carrying bench, rotated a circle according to constant angular speed,
Record very first time set；Wherein very first time set includes reference wafer when being rotated a circle on wafer carrying bench, laser sensing
The time that the output signal of device changes every time；
Measuring process：Chip to be measured rotates a circle on wafer carrying bench according to the angular speed consistent with demarcating steps, note
Record the set of the second time；The set of wherein the second time includes chip to be measured when being rotated a circle on wafer carrying bench, laser sensor
Time for changing every time of output signal；
Calculate offset step：According to angular speed, very first time set and the set of the second time, draw chip to be measured in X
Offset and rotation offset angle on direction and Y-direction.
Wherein, reference wafer is identical with the size of chip to be measured.
Preferably, reference position refers to that the center of reference wafer overlaps with the center of circle of wafer carrying bench；Reference wafer is in benchmark
Position rotates a circle, and the number that the output signal of laser sensor changes is 8 times.
Further, calculate offset step and specifically include following sub-step：
Step S1, the number that the output signal of sensor changes is judged according to the set of the second time, if changing
Number be 8 times, then into step S2, if the number to change be 6 times, into step S3；
Step S2, chip to be measured is calculated in X-direction and offset x, y of Y-direction, and rotation offset angle according to below equation
Spend θ：
X=x ' * cos θ-y ' sin θs,
Y=x ' * sin θs+y′Cos θ,
Wherein, Ti
For the laser sensor time that signal ith changes in demarcating steps, i=1,2,3 ... 8；T′mCut for chip to be measured
Cut or during reflection light 8 times, the time that the m times signal of laser sensor changes, m=1,2,3 ... 8；
Step S3, the brilliant offset x in X-direction and Y-direction to be measured is calculated according to below equation0And y0, and rotation offset angle
Spend θa：
x0=x " * cos θa-y″sinθa,
y0=x " * sin θsa+y″cosθa,
If T34″≥T0, then
If T56″≥T0, then
If T12″≥T0,
If T16″≥T0, then
Wherein, T "nFor chip to be measured cutting or reflection light 6 times when, laser sensor n-th signal change when
Between, n=1,2,3 ... 6；T″kjFor kth time and the time interval of jth time cutting or reflection light, wherein k, j=1,2,3 ... 6；
Further, the invention provides a kind of calibration method of chip offset, according to the survey of above-mentioned chip offset
Amount method draws the offset and rotation offset angle of chip to be measured in the x-direction and the z-direction, in such a way to be measured
Chip carries out position correction：
Rotational alignment：By afer rotates to be measured, the angle of rotation is the angle of chip to be measured skew；
Translation calibration：Position compensation is carried out in the x-direction and the z-direction to chip to be measured, wherein in the x-direction and the z-direction
Position compensation amount be respectively equal to the offset of chip to be measured in the x-direction and the z-direction.
Further, the calibration method of chip offset is also included when the offset for judging chip to be measured exceeds predetermined model
When enclosing, the processing that reports an error is carried out.
The invention provides a kind of measurement, calibrating installation and its method for square wafer offset, is carried by recording chip
The time that the angular velocity of rotation of platform, sensor signal change obtains the offset of chip, avoids and is led because chip is offset
Cause the later processing operation of wafer damage or influence to chip.Compared with prior art, the present invention only needs a turntable
With at least one set of laser sensor, by the angular velocity of rotation and sensor output signal that record turntable change when
Between, you can the measurement and calibration of square shaped chip offset are realized, it is simple in construction, it is easy to accomplish, while installing space can be saved
With reduction debugging difficulty.
Brief description of the drawings
Fig. 1 is the primary structure schematic diagram of the measurement apparatus of the square wafer offset of the embodiment of the present invention；
Fig. 2 is the equivalent track schematic diagram that reference wafer rotates a circle in reference position in the embodiment of the present invention；
Fig. 3 is that chip to be measured shifts in the embodiment of the present invention, rotate a circle cutting light 8 times when equivalent track show
It is intended to；
When Fig. 4 is that chip to be measured only occurs X and Y-direction and offset in Fig. 3, the equivalent track for the cutting light 8 times of rotating a circle
Schematic diagram；
Fig. 5 is the center schematic diagram of chip to be measured in Fig. 3 and Fig. 4；
Fig. 6 is that chip to be measured shifts in the embodiment of the present invention, rotate a circle cutting light 6 times when equivalent track show
It is intended to；
When Fig. 7 is that chip to be measured only occurs X and Y-direction and offset in Fig. 6, the equivalent track for the cutting light 6 times of rotating a circle
Schematic diagram；
Fig. 8 is the center schematic diagram of chip to be measured in Fig. 6 and Fig. 7；
In figure, 1- turntables, 2- laser sensors, 3- transmitting terminals, 4- receiving terminals, 5- chips.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are illustrated：
Embodiment 1
The present embodiment is related to a kind of measurement apparatus of square wafer offset, and with reference to shown in Fig. 1, it mainly includes turntable
1 and one group of laser sensor 2, laser sensor 2 include transmitting terminal 3 and receiving terminal 4 again.Turntable 1 includes rotatable pedestal
With the Circular wafer microscope carrier above pedestal, square chip 5 to be measured is placed on chip load after transmission (below also referred to as " chip ")
On platform.More easily, rotatable pedestal can synthesize the column shaped rotating platform being integrated with Circular wafer microscope carrier.
Preferably, the measurement apparatus of the present embodiment also includes high-precision servo motor, passes through high-precision servo motor driven
Turntable 1 rotates according to the angular speed of setting.Certainly, in other embodiments of the invention, rotation can also be controlled by other means
Turntable 1 rotates.
Preferably, in the present embodiment, laser sensor 2 uses correlation type laser sensor, its transmitting terminal 3 and receiving terminal 4
It is arranged symmetrically in the upper and lower both sides of wafer carrying bench., can be from correlation type laser during chip 5 rotates on wafer carrying bench
Passed through among the transmitting terminal 3 and receiving terminal 4 of sensor 2, and the light of sensor emission is blocked, it is right to be defined as chip 5
The cutting of light.The each pair light of chip 5 is cut once, and respective change will occur for the output signal of laser sensor 2.
The measurement apparatus of the present embodiment also includes the controller being connected with laser sensor 2, when pedestal drives wafer carrying bench
During rotation, the light that the chip to be measured 5 on wafer carrying bench is launched laser sensor 2 is cut so that laser sensor 2
Output signal changes, the time that the output signal of controller recording laser sensor 2 changes.Further, control
Device can also be according to the output of the angular velocity of rotation, chip to be measured laser sensor in rotary course on wafer carrying bench of wafer carrying bench
Time that signal changes etc., draw the offset and rotation offset angle of chip to be measured in the x-direction and the z-direction.Specifically
Measurement and offset computational methods will be described in detail with reference to latter embodiments.
When in order to ensure that turntable 1 rotates, the chip 5 on wafer carrying bench can normally cut laser sensor 2 and launch
Light, it is necessary to so that the diameter of Circular wafer microscope carrier is less than the length of side of chip 5, and the installation site of laser sensor 2 will expire
Sufficient formula：Wherein, RsFor the light and the intersection point of chip 5 to wafer carrying bench of correlation type laser transmitter projects
Center (i.e. the center of circle) distance, LwFor the length of side of chip 5.
In other embodiments of the present invention, laser sensor 2 can also use reflection-type laser sensor, reflection-type laser
The transmitting terminal and receiving terminal of sensor are integrated in one, above the side of wafer carrying bench.Reflection-type laser transmitter projects
After light is reflected by chip 5, the output signal of laser sensor 2 also can accordingly change, its signal change when
Between and number and correlation type laser sensor be consistent.
In addition, the measurement apparatus in the present embodiment is only with one group of laser sensor 2, but in other embodiments of the invention
In, two groups, three groups or more multigroup laser sensor can also be set, preferably to measure the deviation range of chip, Huo Zhetong
The data for crossing more multigroup laser sensor obtain more accurate measurement result.
Embodiment 2
The present embodiment is related to a kind of calibrating installation of square wafer offset, and it is included such as the square crystalline substance in previous embodiment
The measurement apparatus of piece offset, in addition to manipulator, controller is in the angular velocity of rotation according to wafer carrying bench, chip to be measured in crystalline substance
Time that the output signal of laser sensor changes in rotary course on piece microscope carrier etc., draw chip to be measured in X-direction and Y
After offset and rotation offset angle on direction, also controllable manipulator carries out position compensation to chip to be measured.So that
Chip after position compensation will not damage or influence technique during subsequent technique because of the skew in transmitting procedure
Effect.Specific position compensation method will be described in detail in the embodiment below.
Embodiment 3
The present embodiment is related to a kind of measuring method of square wafer offset, based on the measurement apparatus in previous embodiment 1,
By recording the angular velocity of rotation of turntable, and blocked during afer rotates or the light of reflection laser sensor emission
When, time that laser sensor signal changes every time, chip is calculated in X-direction and the offset of Y-direction, and rotation
Deviation angle.
In the present embodiment, the method for the offset of square wafer is measured using aforementioned measuring appliance includes following main step
Suddenly：
Demarcating steps：Reference position reference wafer being placed on wafer carrying bench, rotated a circle according to constant angular speed,
Record very first time set；Wherein very first time set includes reference wafer when being rotated a circle on wafer carrying bench, laser sensing
The time that the output signal of device changes every time；
Measuring process：Chip to be measured is on the wafer carrying bench, according to the angular speed rotation one consistent with demarcating steps
Week, the set of the second time of record；The set of wherein the second time includes chip to be measured when being rotated a circle on wafer carrying bench, laser
The time that the output signal of sensor changes every time；
Calculate offset step：According to angular speed, very first time set and the set of the second time, draw chip to be measured in X
Offset and rotation offset angle on direction and Y-direction.
Wherein, reference wafer is identical with the size of the chip to be measured.
Further, the demarcating steps of the present embodiment specifically include：Firstly the need of reference-calibrating position, as shown in Fig. 2
The center O of reference wafer on reference position1Center of circle O with wafer carrying bench is to overlap, the light quilt of laser transmitter projects
At S, reference position is exactly the precalculated position that chip needs to keep in transmitting procedure for the position of cutting.
For example, in demarcating steps, a piece of reference wafer (such as with wafer size identical dummy wafer to be measured) is put
In reference position, start servomotor, turntable is rotated a circle with CAV ω, reference wafer is to sensor light
Cutting times are 8 times, cut the position of light as shown in Figure 2 1. -8., signal transformation occurs for record sensor ith
Time be Ti, wherein i=1,2,3 ... 8, it is very first time set to define the time now recorded.
In the present embodiment, reference wafer rotates a circle in reference position, and sensor light the 1st time is corresponding with the 8th cutting
Line segment be CD, A points are line segment CD midpoints, and line segment EF is the corresponding line segment of the 2nd time and the 3rd time cutting, and B is in line segment EF
Point, θ1And θ2Central angle respectively corresponding to line segment CD, EF.According to geometrical relationship, have：
During due to without skew, the position of chip is fixed, and therefore, as long as determining ω and Rs, record sensor output is believed
Number transformation period Ti, then in reference position when OA and OB can calculate.
The specific measuring process of the chip offset of the present embodiment is as follows：
After step 1, chip to be measured 5 pass to the stabilization of turntable 1, start servomotor, turntable 1 is with the angular velocity omega of setting
Start to rotate a circle, angular speed now is consistent with the angular speed in demarcating steps；
Step 2, from when starting tropometer, record time for changing of 2 each output signal of sensor, define and now remember
The time of record gathers for the second time.
In the present embodiment, the calculation procedure of chip offset is described in detail below：
Step S1：The second time set in foregoing measuring process 2 judges the number that output signal changes, if
The number to change is 8 times, then into step S2, if the number to change is 6 times, into step S3；
Step S2, chip to be measured is calculated in X-direction and offset x, y of Y-direction, and rotation offset angle according to below equation
Spend θ：
When chip shifts, as shown in figure 3, line segment corresponding to the 1st time and the 8th time cutting of note is that C ' D ', OA ' are ∠
C ' OD ' angular bisector, then
The angle, θ value of rotation offset if on the occasion of, then it is assumed that chip rotates skew to the left, if negative value, then
Chip shifts to the right.In order to the time T recorded in demarcating stepsiDistinguish, with T 'mLight is cut as chip 8 times
When, time that the m times signal of laser sensor changes, wherein, m=1,2,3 ... 8, it is notable that the present embodiment
Measuring method in use is correlation type sensor, so record is number and the time for cutting light, according to reflection
Type sensor, then what is recorded is number and the time of reflection light.
When X, the skew in Y-direction and θ, which occur, for chip offsets simultaneously, the 1st time and the 8th time interval cut, the 2nd time
It is identical only to occur corresponding clipping time interval when X is offset with Y-direction with chip respectively with the time interval of the 3rd cutting, i.e.,
Assuming that afer rotates are returned into θ angles, then the equivalent track of X and Y-direction skew only occurs for chip as shown in figure 4, now, sensor
Line segment corresponding to the cutting of light the 1st time and the 8th time be C " D ", A " point be C " D " and OA intersection point, while and C " D " midpoint,
Line segment E " F " cuts corresponding line segment, and B " being both E " F " and OB intersection point, and E " F " midpoint for the 2nd time and the 3rd time,
θ′1With θ '2Central angle corresponding to respectively line segment C " D ", E " F ".According to geometrical relationship, have：
θ′1=2 π-ω * (T '8-T′1)
θ′2=ω * (T '3-T′2)
Now, afer rotates are obtained and cut light 8 times within one week, X, the offset x ' and y ' of Y-direction skew only occurs, such as schemes
Shown in 5, then have
OM '=x ', ON '=y ', OO1=OO1', ∠ θ=∠ O1OO1', ∠ θ '=∠ M ' OO1′
Therefore, afer rotates one week, during cutting light 8 times, the offset actually occurred is：
Step S3, rotation offset angle, θ of the chip compared to reference position is calculateda, with the cutting computational methods class of 8 times
Seemingly, OG is ∠ QOP angular bisector, and for the timing separation with above-mentioned cutting 8 times, time of cutting or reflection 6 times is with T "nTable
Show, wherein, n=1,2,3 ... 6；Then deviation angle during chip cutting light 6 times：
When the number of chip cutting light is 6 times, and only occur X, Y-direction skew when, definition now chord length to be square
The angle of central angle corresponding to the chip length of side is θ0, T0For afer rotates θ0Time needed for angle, then
T″kjRepresent kth time and the time interval of jth time cutting, wherein k, j=1,2,3 ... 6, i.e. T "kj=Tj″-T″k。
In the present embodiment, for the third time with the 4th time cutting time interval T34″≥T0, then now chip compared to benchmark position
Put and offset downward, the angle of skew is θa, it is assumed that afer rotates are returned into θaAngle, then chip only occur X and Y-direction skew etc.
Track is imitated as shown in fig. 7, now, sensor light cut for the 1st time and the 6th time corresponding to line segment be P ' Q ', A " ' be both P ' Q '
With the midpoint of OA intersection point, and P ' Q ', line segment H ' I ' are the corresponding line segment of the 2nd time and the 3rd time cutting, and B " ' had both been H '
I ' and OB intersection point, and H ' I ' midpoint, θ "1With θ "2The respectively corresponding central angle of line segment P ' Q ', H ' I '.
According to geometrical relationship, have：
θ″1=2 π-ω * (T "6-T″1)
θ″2=ω * (T "3-T″2)
Now, afer rotates are obtained and cut light 6 times within one week, X, the offset x " and y " of Y-direction skew only occurs, such as schemes
Shown in 8, then have
OM1'=x ", ON1'=y ", OO2=OO2', ∠ θa=∠ O2OO2', ∠ θa'=∠ M1′OO2′
Therefore, afer rotates one week, during cutting light 6 times, the offset actually occurred is：
In the present embodiment, only for chip T34″≥T0Situation list embodiment, measured by above-mentioned steps same
Sample can obtain：
x0=x " * cos θa-y″sinθa, y0=x " * sin θsa+y″cosθa,
If T56″≥T0, then chip compared to reference position to right avertence, now,
If T12″≥T0, then chip compared to reference position to left avertence, now,
If T16″≥T0, then chip is inclined upwards compared to reference position, now,
It can be seen from the present embodiment above content, as long as calibration value of the record chip at reference position, that is, determine ω
And Rs, Ti；Re-record the time that sensor signal changes that rotated a circle when chip shifts, you can obtain the reality of chip
Border offset.Obviously, when the anglec of rotation of chip is 0, then equivalent to chip only there occurs X, the skew of Y-direction, further
Ground, if be calculated X, Y-direction offset value also be 0, illustrate that chip does not shift.
It should be noted that the time that chip offset is calculated in above-described embodiment only have selected the part in time set
Element, it will be understood by those of skill in the art that calculating the optional time element of offset is not limited to above-mentioned Partial Elements,
And it is relevant with the position of chip cutting light and number, such as, during chip cutting light 8 times, T is have selected in above-described embodiment1、
T8、T′1、T′8、T2、T3、T′2、T′3, T also may be selected in practical operation4、T5、T′4、T′5、T6、T7、T′6、T′7To calculate chip
Offset.
Embodiment 4
The present embodiment is related to a kind of calibration method of square wafer offset.During actual process, chip is often
Out of position, i.e., compared to predetermined reference position, it may occur that on X, Y-direction and anglec of rotation θ skew, this just needs
After being measured to offset, then predetermined reference position is returned to by calibration means.
Specifically, the chip to be measured that the measuring method of the square wafer offset in present invention is drawn
After offset and rotation offset angle in the x-direction and the z-direction, position correction is carried out to chip to be measured in such a way：
Rotational alignment：By afer rotates to be measured, the angle of rotation is the angle of chip skew to be measured；
Translation calibration：Position compensation is carried out in the x-direction and the z-direction to chip to be measured respectively, wherein in X-direction and Y side
Upward position compensation amount is respectively equal to the offset of chip to be measured in the x-direction and the z-direction.
It is worth noting that, the above method is to be directed to afer rotates to be measured one week, the number of cutting or reflection light is 6 times
With the calibration of chip offset at 8 times.During actual process, when the number of afer rotates cutting in one week or reflection light is small
In 6 times, i.e., chip at least two sides can not cut or during reflection light, then illustrate that the offset of chip is excessive, beyond pre-
Fixed deviation range, at this point it is possible to be calibrated roughly by vision or using calibrating modes such as multiple sensors, further
Measurement obtains precision offset amount；Or more easily, controller can also exceed predetermined model in the offset for judging chip
When enclosing, the processing that reports an error is carried out, position correction is carried out to chip manually by operating personnel.
Although present disclosure is discussed in detail by the above embodiments, but it should be appreciated that above-mentioned retouches
State and should not be considered as limitative to the invention.After those skilled in the art has read the above, make for the present invention
Among going out a variety of obvious modifications and substitutions all in the scope of protection of the invention.
Claims (10)
1. a kind of measurement apparatus of square wafer offset, it is characterised in that the measurement apparatus includes turntable, laser sensing
Device and the controller being connected with the laser sensor；The laser sensor includes transmitting terminal and receiving terminal, the turntable
Including rotatable pedestal and circular wafer carrying bench；When the pedestal drives the wafer carrying bench rotation, the wafer carrying bench
On chip to be measured the light of the laser transmitter projects is cut or reflected so that the laser sensor it is defeated
Go out signal to change, the controller records the time that the output signal of the laser sensor changes.
2. the measurement apparatus of square wafer offset according to claim 1, it is characterised in that the laser sensor is
Correlation type laser sensor, the transmitting terminal and receiving terminal of the correlation type laser sensor are arranged symmetrically in the wafer carrying bench
Upper and lower both sides；The diameter of wherein described wafer carrying bench is less than the length of side of the chip to be measured, and the sensor and the crystalline substance
The distance in the center of circle of piece microscope carrier meets formula：Wherein, Rs is the correlation type laser transmitter projects
The distance in the center of circle of the intersection point of light and the chip to be measured to the wafer carrying bench, Lw are the length of side of the chip to be measured.
3. the measurement apparatus of square wafer offset according to claim 1, it is characterised in that the laser sensor is
Reflection-type laser sensor, the reflection sensor are located above the side of the wafer carrying bench.
4. the measurement apparatus of square wafer offset according to claim 1, it is characterised in that the measurement apparatus is also wrapped
High-precision servo motor is included, pedestal described in the high-precision servo motor driven and the wafer carrying bench are revolved by the angular speed of setting
Turn.
A kind of 5. calibrating installation of square wafer offset, it is characterised in that the calibrating installation include as claim 1-4 it
Measurement apparatus described in any one, the calibrating installation also include manipulator, and the controller is according to the crystalline substance to be measured drawn
The offset of piece, the manipulator is controlled to carry out position compensation to the chip to be measured.
A kind of 6. square wafer skew of the measurement apparatus of the square wafer offset of any one according to the claim 1-4
The measuring method of amount, it is characterised in that the measuring method comprises the following steps：
Demarcating steps：Reference wafer is placed on the reference position on the wafer carrying bench, rotated a circle according to constant angular speed,
Record very first time set；Wherein described very first time set includes the reference wafer and rotated a circle on the wafer carrying bench
When, time that the output signal of the laser sensor changes every time；
Measuring process：The chip to be measured revolves on the wafer carrying bench according to the angular speed consistent with the demarcating steps
Circle, the set of the second time of record；Wherein described second time set includes the chip to be measured on the wafer carrying bench
When rotating a circle, time that the output signal of the laser sensor changes every time；
Calculate offset step：According to the angular speed, very first time set and second time set, institute is drawn
State the offset and rotation offset angle of chip to be measured in the x-direction and the z-direction.
Wherein, the reference wafer is identical with the size of the chip to be measured.
7. the measuring method of square wafer offset according to claim 6, it is characterised in that the reference position refers to
The center of the reference wafer overlaps with the center of circle of the wafer carrying bench；The reference wafer rotates one in the reference position
In week, the number that the output signal of the laser sensor changes is 8 times.
8. the method for measurement square wafer offset according to claim 7, it is characterised in that the calculating offset step
Suddenly following sub-step is specifically included：
Step S1, the number that the output signal of the sensor changes is judged according to second time set, if occurring
The number of change is 8 times, then into step S2, if the number to change is 6 times, into step S3；
Step S2, the chip to be measured is calculated in X-direction and offset x, y of Y-direction, and rotation offset angle according to below equation
Spend θ：
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<mrow>
<mi>&omega;</mi>
<mo>*</mo>
<mrow>
<mo>(</mo>
<msubsup>
<mi>T</mi>
<mn>1</mn>
<mo>&prime;</mo>
</msubsup>
<mo>+</mo>
<msubsup>
<mi>T</mi>
<mn>8</mn>
<mo>&prime;</mo>
</msubsup>
<mo>)</mo>
</mrow>
</mrow>
<mn>2</mn>
</mfrac>
<mo>-</mo>
<mi>&pi;</mi>
<mo>,</mo>
</mrow>
X=x ' * cos θ-y ' sin θs,
Y=x ' * sin θ+y ' cos θ,
Wherein, TiFor
The laser sensor time that signal ith changes in the demarcating steps, i=1,2,3 ... 8；T′mTo be described
When chip to be measured cutting or reflection light 8 times, time that described the m times signal of laser sensor changes, wherein, m=1,
2,3 ... 8；
Step S3, the brilliant offset x in X-direction and Y-direction to be measured is calculated according to below equation0And y0, and rotation offset angle
Spend θa：
<mrow>
<msub>
<mi>&theta;</mi>
<mi>a</mi>
</msub>
<mo>=</mo>
<mfrac>
<mrow>
<mi>&omega;</mi>
<mo>*</mo>
<mrow>
<mo>(</mo>
<msubsup>
<mi>T</mi>
<mn>1</mn>
<mrow>
<mo>&prime;</mo>
<mo>&prime;</mo>
</mrow>
</msubsup>
<mo>+</mo>
<msubsup>
<mi>T</mi>
<mn>6</mn>
<mrow>
<mo>&prime;</mo>
<mo>&prime;</mo>
</mrow>
</msubsup>
<mo>)</mo>
</mrow>
</mrow>
<mn>2</mn>
</mfrac>
<mo>-</mo>
<mi>&pi;</mi>
<mo>,</mo>
</mrow>
x0=x " * cos θa-y″sinθa,
y0=x " * sin θsa+y″cosθa,
If T34″≥T0, then
If T56″≥T0, then
If T12″≥T0,
If T16″≥T0, then
Wherein, Tn" for the chip to be measured cutting or reflection light 6 times when, the laser sensor n-th signal changes
Time, wherein, n=1,2,3 ... 6；T″kjFor kth time and the time interval of jth time cutting or reflection light, wherein k, j=
1,2,3 ... 6；
9. a kind of calibration method of square wafer offset, it is characterised in that according to the side described in any one of claim 6-8
The chip to be measured that the measuring method of shape chip offset is drawn offset in the x-direction and the z-direction and rotation offset angle
Degree, position correction is carried out to the chip to be measured in such a way：
Rotational alignment：By the afer rotates to be measured, the angle of rotation is the angle of the chip skew to be measured；
Translation calibration：Position compensation is carried out in the x-direction and the z-direction to the chip to be measured, wherein in the x-direction and the z-direction
Position compensation amount be respectively equal to the offset of the chip to be measured in the x-direction and the z-direction.
10. the calibration method of a kind of square wafer offset according to claim 9, it is characterised in that methods described is also
Including：When the offset for judging the chip to be measured exceeds predetermined scope, the processing that reports an error is carried out.
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| CN112449723A (en) * | 2018-09-04 | 2021-03-05 | 应用材料公司 | Method and apparatus for measuring wafer movement and placement using vibration data |
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| CN114608482A (en) * | 2022-05-11 | 2022-06-10 | 南昌昂坤半导体设备有限公司 | Curvature measuring method, system, readable storage medium and computer device |
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