WO2016186070A1 - 銅合金スパッタリングターゲット及びその製造方法 - Google Patents
銅合金スパッタリングターゲット及びその製造方法 Download PDFInfo
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- WO2016186070A1 WO2016186070A1 PCT/JP2016/064442 JP2016064442W WO2016186070A1 WO 2016186070 A1 WO2016186070 A1 WO 2016186070A1 JP 2016064442 W JP2016064442 W JP 2016064442W WO 2016186070 A1 WO2016186070 A1 WO 2016186070A1
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- Prior art keywords
- sputtering target
- copper
- copper alloy
- added
- wtppm
- Prior art date
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 49
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000004544 sputter deposition Methods 0.000 title abstract description 20
- 239000010949 copper Substances 0.000 claims abstract description 74
- 229910052802 copper Inorganic materials 0.000 claims abstract description 62
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 59
- 238000002844 melting Methods 0.000 claims abstract description 55
- 230000008018 melting Effects 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 49
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 42
- 239000001301 oxygen Substances 0.000 claims abstract description 42
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 35
- 239000007789 gas Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 239000000956 alloy Substances 0.000 claims abstract description 25
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 24
- 239000012298 atmosphere Substances 0.000 claims abstract description 17
- 239000011261 inert gas Substances 0.000 claims abstract description 7
- 238000005223 charged particle activation analysis Methods 0.000 claims abstract description 6
- 230000006698 induction Effects 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 238000010894 electron beam technology Methods 0.000 claims description 9
- 238000005275 alloying Methods 0.000 claims description 7
- 239000012300 argon atmosphere Substances 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 7
- 239000013077 target material Substances 0.000 claims description 6
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000005242 forging Methods 0.000 claims description 2
- 238000005096 rolling process Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 32
- 239000007858 starting material Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 25
- 230000000052 comparative effect Effects 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000004090 dissolution Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 3
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- DBGSRZSKGVSXRK-UHFFFAOYSA-N 1-[2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]acetyl]-3,6-dihydro-2H-pyridine-4-carboxylic acid Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CCC(=CC1)C(=O)O DBGSRZSKGVSXRK-UHFFFAOYSA-N 0.000 description 1
- AWFYPPSBLUWMFQ-UHFFFAOYSA-N 2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]-1-(1,4,6,7-tetrahydropyrazolo[4,3-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CC2=C(CC1)NN=C2 AWFYPPSBLUWMFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D7/00—Casting ingots, e.g. from ferrous metals
- B22D7/005—Casting ingots, e.g. from ferrous metals from non-ferrous metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/01—Alloys based on copper with aluminium as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/05—Alloys based on copper with manganese as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
Definitions
- the present invention relates to a copper alloy sputtering target and a manufacturing method thereof, and more particularly to a sputtering target suitable for forming a thin film made of a copper alloy used as wiring in a semiconductor integrated circuit and a manufacturing method thereof.
- Cu has been used as a wiring material for semiconductor integrated circuits, but Cu has a lower resistance (specific resistance: about 1.7 ⁇ ⁇ cm) as the wiring becomes finer. ) Has been put into practical use.
- a diffusion barrier layer such as Ta or TaN is formed in a wiring layer or a wiring groove.
- copper or a copper alloy is formed by sputtering as a base layer (seed layer) in order to perform this electroplating.
- the seed layer has a very thin thickness that is less than the wiring width, and such a very thin seed layer is formed.
- a good seed layer cannot be formed due to particles generated during sputtering. Formation of such a seed layer is important, and if particles exist in the seed layer, defects such as disconnection are formed.
- Patent Documents 1 to 3 The present applicant has so far proposed an invention relating to a high-purity copper or copper alloy sputtering target for forming a wiring of a semiconductor integrated circuit. These can prevent the occurrence of defects such as voids, hillocks, and disconnection, have low specific resistance, and have EM resistance and oxidation resistance. However, in recent ultrafine wiring, impurities contained in trace amounts Particles and the like caused by the problem have come to be regarded as a problem. Although not directly related to the present application, Patent Documents 4 to 6 disclose methods for producing high-purity copper.
- the present invention relates to a copper alloy sputtering target suitable for forming a thin film made of a copper alloy used as a wiring of a semiconductor integrated circuit, and to provide a copper alloy sputtering target with less generation of particles during sputtering and a method for manufacturing the same.
- the present inventors have conducted intensive research, and as a result of devising a method for producing a copper alloy ingot as a material for the sputtering target, oxygen and carbon contained in the copper alloy sputtering target are devised. It has been found that the generation of particles due to the impurities can be remarkably suppressed during sputtering.
- the present invention provides the following inventions. 1) A copper alloy sputtering target having an oxygen content of 0.6 wtppm or less, or an oxygen content of 2 wtppm or less and a carbon content of 0.6 wtppm or less by charged particle activation analysis.
- a copper raw material is melted in a vacuum or an inert gas atmosphere, and then a reducing gas is added to the melting atmosphere, and then alloying is performed by adding an alloy element to the molten metal, and the resulting ingot is formed into a target shape.
- a method for producing a copper alloy sputtering target characterized by comprising: 4) The method for producing a copper alloy sputtering target according to 3) above, wherein the reducing gas comprises hydrogen or carbon monoxide.
- the present invention has an excellent effect that impurities contained in a copper alloy sputtering target, particularly oxygen and carbon, can be remarkably reduced and generation of particles during sputtering can be suppressed.
- the copper alloy sputtering target of the present invention is characterized in that, by charged particle activation analysis, the oxygen content is 0.6 wtppm or less, or the oxygen content is 2 wtppm or less, and the carbon content is 0.6 wtppm or less.
- the oxygen content is 0.6 wtppm or less, or the oxygen content is 2 wtppm or less, and the carbon content is 0.6 wtppm or less.
- oxygen contained in copper or Carbon may move to the alloy elements and remain.
- the present invention can reduce oxygen and carbon extremely effectively even in a copper alloy by devising a manufacturing method.
- charged particle activation analysis is a method of chemical analysis, in which a sample is irradiated with deuterons, neutrons, ⁇ -rays, etc., activated, and the radioisotope is traced in the sample.
- Various types of qualitative and quantitative analysis are included.
- oxygen and carbon contained in a copper alloy sputtering target can be extremely reduced, and thereby generation of particles during sputtering can be effectively suppressed.
- the lower limit of quantification by this analysis method is oxygen: 0.1 wtppm and carbon: 0.1 wtppm.
- the copper alloy of the present invention has a high purity, but the purity is preferably 99.999 wt% (5N) or more.
- the purity is determined by measuring the content of metal impurities excluding copper and alloy elements contained in the target using glow discharge mass spectrometry (GDMS analysis), and the difference number method (100 wt% minus metal impurities) wt%).
- Impurities are Ag, Al, Ca, Cr, Fe, K, Na, Ni, P, S, Th, and U.
- alloy element which comprises the copper alloy sputtering target of this invention it is preferable that it is any one or more of the elements whose affinity with oxygen or carbon is high compared with copper.
- examples include Al, Mn, Co, Ni, Mg, Ti, Si, In, Sn, Ge, Bi, B, Cr, Nd, Zr, La, Er, Gd, Dy, Yb, Lu, Hf, and Ta.
- These alloy elements are known materials that can improve the wiring characteristics of the semiconductor element, and a plurality of materials can be added in combination to improve the characteristics. The amount of addition varies depending on the required properties, but for example, Al: 0.1 to 15.0 at%, Mn: 0.1 to 30.0 at% are preferable.
- copper and alloy materials Al, Mn, etc.
- These raw materials are preferably used with as high a purity as possible. It is effective to use copper having a purity of 6N or higher and an alloy element having a purity of 4N or higher.
- the copper raw material is introduced into a water-cooled copper crucible (including hearth).
- the crucible material Although there are refractories such as alumina, magnesia, and graphite as the crucible material, it is preferable to use copper of the same quality as the material to be melted because it may be mixed as an impurity in the molten metal. Thereby, even if the crucible material melts into the molten metal, it does not become an impurity.
- the copper is dissolved in a vacuum or an inert gas (Ar, He, etc.) atmosphere.
- a vacuum or an inert gas (Ar, He, etc.) atmosphere can be used for plasma arc melting, electron beam melting, induction melting, and the like.
- a reducing gas hydrogen, carbon monoxide, etc.
- the addition of the reducing gas is preferably performed after dissolving in a vacuum or an inert gas atmosphere and sufficiently desorbing oxygen and carbon contained in copper as carbon monoxide. After sufficiently removing carbon, excess oxygen can be desorbed with reducing gas as water vapor (H 2 O) or carbon dioxide (CO 2 ), and the carbon and oxygen contained in copper as impurities are extremely effective. It becomes possible to reduce it.
- the addition of the reducing gas is not limited at a relatively initial stage (not sufficiently removing carbon) in which copper is dissolved.
- the obtained molten copper is introduced into the next-stage water-cooled copper crucible (including hearth), alloy elements are added, and then used for plasma arc melting, electron beam melting, induction melting, etc. And copper alloy.
- an alloying element is added to the molten copper after removing oxygen and carbon and dissolved.
- oxygen and carbon contained in the copper are taken into the alloying element to form oxides and carbides. This is because of remaining in the alloy ingot. Therefore, the timing of addition of the alloy element is very important.
- the molten copper alloy is introduced into a water-cooled copper mold and melted by an induction melting method or the like, and the solidified ingot is pulled out from the bottom of the mold. Thereafter, the surface layer of the manufactured ingot is removed, and a plastic target and a heat treatment process are performed to obtain a sputtering target material. Furthermore, this target material can be processed into a predetermined target shape by machining to obtain a copper alloy sputtering target.
- Example 1 Cu having a purity of 6N or more was prepared, introduced into a water-cooled copper hearth, and dissolved by plasma irradiation in an argon atmosphere into which 4 vol% of hydrogen was introduced by a plasma arc melting method. Thereafter, this molten metal was introduced into a water-cooled copper hearth, Al having a purity of 4N or more was added so as to be 1 at%, and it was melted by a plasma arc melting method. Next, the molten copper alloy was poured into a water-cooled copper mold, melted by vacuum induction melting, and the solidified ingot was pulled out from the bottom of the mold.
- this ingot was made to have a diameter of 180 mm ⁇ thickness of 160 mm, hot forged at 700 ° C., and further cold rolled to a diameter of 460 mm ⁇ thickness of 24.5 mm. Then, after heat-processing at 400 degreeC, it rapidly cooled and produced the rolled sheet. This was machined to produce a sputtering target having a diameter of 440 mm and a thickness of 16.5 mm. Then, this was joined to the backing plate by diffusion bonding.
- the impurity concentration of a part of the cut out ingot was examined. Note that the GDMS method was used for the metal components, and charged particle activation analysis was used for the gas components (oxygen, carbon). As a result, the total content of metal impurities was 1 wtppm or less, and the gas components were 0.7 wtppm of carbon and 0.3 wtppm of oxygen, and particularly the concentration of oxygen gas components could be significantly reduced.
- the target was sputtered to 100 kWh, and deposited on a 12-inch silicon substrate at an input power of 38 kW for 5 seconds.
- the number of particles having a size of 0.088 ⁇ m or more was measured for the formed film, it was a good result of 8 particles.
- the number of particles on the substrate was also measured at the Life positions of 200, 300, 500, and Li800 kWh, and good results were obtained with 10 or less throughout the entire Life.
- Example 2 Cu having a purity of 6N or higher was prepared, introduced into a water-cooled copper hearth, and dissolved by irradiating plasma in an argon atmosphere by a plasma arc melting method. Thereafter, 4 vol% of hydrogen was added to the atmosphere during dissolution, and further dissolution was performed. Thereafter, this molten metal was introduced into the water-cooled copper hearth in the next stage, Al having a purity of 4N or more was added so as to be 1 at%, and it was melted by a plasma arc melting method. Next, this was poured into a water-cooled copper mold and melted by vacuum induction melting, and the solidified ingot was pulled out from the bottom of the mold.
- this alloy ingot was processed into a sputtering target by the same method and conditions as in Example 1, and then joined to a backing plate by diffusion bonding.
- the impurity concentration of a part of the cut out ingot the total content of metal impurities is 1 wtppm or less, and the gas components are 0.2 wtppm carbon, 0.3 wtppm oxygen, and both carbon and oxygen gas components. The concentration could be significantly reduced.
- sputtering was performed and the number of particles was measured in the same manner as in Example 1, a favorable result of 8 or less was obtained throughout the Life.
- Example 3 Cu having a purity of 6N or more was prepared, introduced into a water-cooled copper hearth, and dissolved by an electron beam melting method in an atmosphere in which hydrogen was added to a vacuum at a flow rate of 400 ml / min or more. Thereafter, this molten metal was introduced into the water-cooled copper hearth at the next stage, and high-purity Al having a purity of 4N or more was added so as to be 1 at%, and was dissolved by an electron melting method. Next, this was poured into a water-cooled copper mold, melted by vacuum induction melting, and the solidified ingot was pulled out from the bottom of the mold.
- this alloy ingot was processed into a sputtering target by the same method and conditions as in Example 1, and then joined to a backing plate by diffusion bonding.
- the total content of metal impurities is 1 wtppm or less, and the gas components are 0.6 wtppm carbon and 0.8 wtppm oxygen, especially the concentration of the gas component of carbon. It was possible to reduce significantly.
- sputtering was carried out and the number of particles was measured in the same manner as in Example 1, a result of 12 or less was obtained throughout the Life. The results are shown in Table 1.
- Example 4 Cu having a purity of 6N or more was prepared, introduced into a water-cooled copper hearth, and dissolved in a vacuum by an electron beam melting method. Thereafter, hydrogen was added to the melting atmosphere at a flow rate of 400 ml / min or more to further dissolve. Thereafter, this molten metal was introduced into the water-cooled copper hearth at the next stage, and high-purity Al having a purity of 4N or more was added so as to be 1 at%, and was dissolved by an electron melting method. Next, this was poured into a water-cooled copper mold, melted by vacuum induction melting, and the solidified ingot was pulled out from the bottom of the mold.
- this alloy ingot was processed into a sputtering target by the same method and conditions as in Example 1, and then joined to a backing plate by diffusion bonding.
- the total content of metal impurities is 1 wtppm or less
- the gas components are 0.2 wtppm for carbon, and 0.9 wtppm for oxygen, especially the concentration of the gas component of carbon. It was possible to reduce significantly. Further, when sputtering was performed and the number of particles was measured in the same manner as in Example 1, a result of 10 or less was obtained throughout the Life. The results are shown in Table 1.
- Example 5-12 As shown in Table 1, the amount of Al added was changed to 2 at% (Examples 5-8) and 4 at% (Examples 9-12), and the same method as in Example 1 was used, respectively. And the sputtering target was produced. As a result, in all cases, the total content of metal impurities was 1 wtppm or less, carbon was 1 wtppm or less, and oxygen was 1 wtppm or less, and the concentration of gas components could be significantly reduced. Moreover, when sputtering was performed and the number of particles was measured in the same manner as in Example 1, a good result of 13 or less was obtained throughout the Life.
- Examples 13-24 As shown in Table 1, the additive element is Mn, and the amount of Mn added is changed to 1 at% (Examples 13-16), 2 at% (Examples 17-20), and 4 at% (Examples 21-24). Then, using the same method as in Example 1, an alloy ingot and a sputtering target were produced. As a result, in all cases, the total content of metal impurities was 1 wtppm or less, carbon was 0.6 wtppm or less, and oxygen was 2 wtppm or less, and the concentration of gas components could be significantly reduced. Further, as in Example 1, when sputtering was performed and the number of particles was measured, a favorable result of 9 or less was obtained throughout the Life.
- this ingot was processed into a sputtering target by the same method and conditions as in Example 1, and then joined to the backing plate by diffusion bonding.
- the gas components were 0.2 wtppm for carbon and 10 wtppm for oxygen, which was higher than when hydrogen was introduced for the oxygen value.
- sputtering was performed and the number of particles was measured. As a result, a maximum of 30 particles and occasional many particles were observed.
- this alloy ingot was processed into a sputtering target by the same method and conditions as in Example 1, and then joined to a backing plate by diffusion bonding.
- the gas components were 0.9 wtppm for carbon and 0.8 wtppm for oxygen, which were slightly higher values than when Al was added later.
- sputtering was performed and the number of particles was measured, a maximum of 20 particles and occasional many particles were observed.
- this alloy ingot was processed into a sputtering target by the same method and conditions as in Example 1, and then joined to a backing plate by diffusion bonding.
- the gas components were 0.9 wtppm for carbon and 1 wtppm for oxygen, which were slightly higher than when Al was added later.
- sputtering was performed and the number of particles was measured. As a result, a maximum of 19 particles were occasionally seen.
- this alloy ingot was processed into a sputtering target by the same method and conditions as in Example 1, and then joined to a backing plate by diffusion bonding.
- the gas components were 1 wtppm for carbon and 3 wtppm for oxygen, which were higher values than when a reducing gas was added.
- sputtering was performed and the number of particles was measured. As a result, a maximum of 23 particles and occasional many particles were observed.
- this alloy ingot was processed into a sputtering target by the same method and conditions as in Example 1, and then joined to a backing plate by diffusion bonding.
- the gas component was 0.2 wtppm of carbon and 4 wtppm of oxygen, which was a higher oxygen value than when a reducing gas was added.
- sputtering was performed and the number of particles was measured. As a result, a maximum of 26 particles were occasionally seen.
- Example 6-15 As shown in Table 1, the amount of Al added was changed to 2 at% (Comparative Example 6-10) and 4 at% (Comparative Example 11-15). And the sputtering target was produced. As a result, oxygen was 1 wtppm or more, and the reduction of oxygen was not sufficient. Further, as in Example 1, when sputtering was performed and the number of particles was measured, it increased to 18 or more at the maximum throughout the entire Life.
- Comparative Example 16-30 As shown in Table 1, the additive element was Mn, and the amount of Mn added was changed to 1 at% (Comparative Example 16-20), 2 at% (Comparative Example 21-25), 4 at% (Comparative Example 26-30). Then, using the same method as in Comparative Example 1, an alloy ingot and a sputtering target were produced. As a result, in all cases, oxygen was 3 wtppm or more, and the oxygen was not sufficiently reduced. Further, as in Example 1, when sputtering was performed and the number of particles was measured, the number increased to a maximum of 14 or more throughout the entire Life.
- the present invention can produce a copper alloy sputtering target with very little oxygen and carbon, and when such a target is sputtered, the generation of particles can be remarkably suppressed.
- the copper alloy sputtering target produced by the present invention is particularly useful for forming a wiring film of a semiconductor integrated circuit.
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Abstract
Description
1)荷電粒子放射化分析による、酸素含有量が0.6wtppm以下、又は、酸素含有量が2wtppm以下かつ炭素含有量が0.6wtppm以下であることを特徴とする銅合金スパッタリングターゲット。
2)合金元素が、酸素又は炭素との親和力がCuに比べて高い元素の一種以上であることを特徴とする上記1)記載の銅合金スパッタリングターゲット。
3)銅原料を真空又は不活性ガス雰囲気中で溶解し、その後、溶解中の雰囲気に還元ガスを付加し、次に、溶湯に合金元素を添加して合金化し、得られたインゴットをターゲット形状に加工することを特徴とする銅合金スパッタリングターゲットの製造方法。
4)還元ガスが、水素又は一酸化炭素からなることを特徴とする上記3)記載の銅合金スパッタリングターゲットの製造方法。
5)溶解工程は、プラズマアーク溶解法、電子ビーム溶解法、誘導溶解法等により行うことを特徴とする上記3)又は4)に記載の銅合金スパッタリングターゲットの製造方法。
6)それぞれの溶解処理は、異なる坩堝内で溶解を行うことを特徴とする上記3)~5)のいずれか一に記載の銅合金スパッタリングターゲットの製造方法。
7)銅を水冷銅坩堝に導入し、アルゴン雰囲気中でプラズマアーク溶解法により溶解し、その後、溶解中の雰囲気に水素ガスを付加し、次に、溶湯を次段の水冷銅坩堝に導入し、合金元素を添加した後、プラズマアーク溶解法により合金化し、得られたインゴットを鍛造、圧延、熱処理を経て、スパッタリングターゲット素材とし、このターゲット素材を機械加工して、ターゲット形状に加工することを特徴とする上記3)~6)のいずれか一に記載の銅合金スパッタリングターゲットの製造方法。
Al、Mn、Co、Ni、Mg、Ti、Si、In、Sn、Ge、Bi、B、Cr、Nd、Zr、La、Er、Gd、Dy、Yb、Lu、Hf、Taが挙げられる。これらの合金元素は、半導体素子の配線の特性を改善することができる公知の材料であり、特性改善のために、複数の材料を組み合わせて添加することも可能である。これらの添加量は要求される特性によっても異なるが、例えば、Al:0.1~15.0at%、Mn:0.1~30.0at%、とするのが好ましい。
純度6N以上のCuを用意し、これを水冷銅ハースに導入して、プラズマアーク溶解法にて、水素を4vol%導入したアルゴン雰囲気下、プラズマを照射して溶解した。その後、この溶湯を水冷銅ハースに導入し、純度4N以上のAlを1at%となるように添加し、プラズマアーク溶解法にて溶解した。次に、銅合金の溶湯を水冷銅モールドに出湯し、真空誘導溶解にて溶解するとともに、モールドの底部から凝固したインゴットを引き抜いた。
純度6N以上のCuを用意し、これを水冷銅ハースに導入して、プラズマアーク溶解法にて、アルゴン雰囲気下でプラズマを照射して溶解した。その後、溶解中の雰囲気に水素を4vol%付加して、さらに溶解を行った。その後、この溶湯を次段の水冷銅ハースに導入し、純度4N以上のAlを1at%となるように添加し、プラズマアーク溶解法にて溶解した。次に、これを水冷銅モールドに出湯し、真空誘導溶解にて溶解するともに、モールドの底部から凝固したインゴットを引き抜いた。
純度6N以上のCuを用意し、これを水冷銅ハースに導入して、真空に水素を流量400ml/min以上付加した雰囲気で、電子ビーム溶解法にて溶解した。その後、この溶湯を次段の水冷銅ハースに導入し、純度4N以上の高純度Alを1at%となるように添加し、電子溶解法にて溶解した。次に、これを水冷銅モールドに出湯し、真空誘導溶解にて、溶解するとともに、モールドの底部から凝固したインゴットを引き抜いた。
純度6N以上のCuを用意し、これを水冷銅ハースに導入して、真空中、電子ビーム溶解法にて溶解した。その後、溶解中の雰囲気に水素を流量400ml/min以上付加して、さらに溶解を行った。その後、この溶湯を次段の水冷銅ハースに導入し、純度4N以上の高純度Alを1at%となるように添加し、電子溶解法にて溶解した。次に、これを水冷銅モールドに出湯し、真空誘導溶解にて、溶解するとともに、モールドの底部から凝固したインゴットを引き抜いた。
表1に記載する通り、Alの添加量を2at%(実施例5-8)、4at%(実施例9-12)と変化させて、それぞれ実施例1と同様の方法を用いて、合金インゴット及びスパッタリングターゲットを作製した。その結果、いずれも、金属不純物の合計含有量は1wtppm以下、炭素が1wtppm以下、酸素が1wtppm以下と、ガス成分の濃度を著しく低減することができた。また、実施例1と同様に、スパッタリングを実施し、パーティクル数を計測したところ、Life全体を通して13個以下という良好な結果が得られた。
表1に記載する通り、添加元素をMnとし、Mnの添加量を1at%(実施例13-16)、2at%(実施例17-20)、4at%(実施例21-24)と変化させて、それぞれ実施例1と同様の方法を用いて、合金インゴット及びスパッタリングターゲットを作製した。その結果、いずれも、金属不純物の合計含有量は1wtppm以下、炭素が0.6wtppm以下、酸素が2wtppm以下と、ガス成分の濃度を著しく低減することができた。また、実施例1と同様に、スパッタリングを実施し、パーティクル数を計測したところ、Life全体を通して9個以下という良好な結果が得られた。
純度6N以上の高純度Cuを用意し、これを水冷銅ハースに導入して、プラズマアーク溶解法にて、アルゴン雰囲気下でプラズマを照射することにより溶解した。なお、還元ガスの付加は行わなかった。その後、この溶湯を次段の水冷銅ハースに導入し、純度4N以上の高純度Alを1at%となるように添加し、プラズマアーク溶解法にて溶解した。次に、この溶湯を水冷銅モールドに出湯し、真空誘導溶解にて溶解するとともに、モールドの底部から凝固したインゴットを引き抜いた。
純度6N以上のCu、純度5N以上のAl1at%を用意し、これを水冷銅ハースに導入して、Cu,Al同時にプラズマアーク溶解法にて、水素を4vol%導入したアルゴン雰囲気下でプラズマを照射することにより溶解した。その後、この溶湯を水冷銅モールドに出湯し、真空誘導溶解にて溶解するとともに、モールドの底部から凝固したインゴットを引き抜いた。
純度6N以上のCu、純度5N以上のAl1at%を用意し、これを水冷銅ハースに導入して、Cu,Al同時にプラズマアーク溶解法にて、アルゴン雰囲気下でプラズマを照射することにより溶解した。その後、溶解中の雰囲気に水素を4vol%付加して、さらに溶解を行った。次に、これを水冷銅モールドに出湯し、真空誘導溶解にて溶解するとともに、モールドの底部から凝固したインゴットを引き抜いた。
純度6N以上のCu、純度5N以上のAl1at%を用意し、これを水冷銅ハースに導入して、Cu、Al同時に真空に水素を流量400ml/min以上付加した雰囲気で、電子ビーム溶解法にて溶解した。次に、これを水冷銅モールドに出湯し、真空誘導溶解にて溶解するとともに、モールドの底部から凝固したインゴットを引き抜いた。
純度6N以上のCuを用意し、これを水冷銅ハースに導入して、真空中、電子ビーム溶解法にて溶解した。なお、還元ガスの付加は行わなかった。その後、この溶湯を次段の水冷銅ハースに導入し、純度4N以上の高純度Alを1at%となるように添加し、電子溶解法にて溶解した。次に、これを水冷銅モールドに出湯し、真空誘導溶解にて溶解するとともに、モールドの底部から凝固したインゴットを引き抜いた。
表1に記載する通り、Alの添加量を2at%(比較例6-10)、4at%(比較例11-15)と変化させて、それぞれ比較例1と同様の方法を用いて、合金インゴット及びスパッタリングターゲットを作製した。その結果、酸素が1wtppm以上と、酸素の低減が十分でなかった。また、実施例1と同様に、スパッタリングを実施し、パーティクル数を計測したところ、Life全体を通して最大18個以上と増加していた。
表1に記載する通り、添加元素をMnとし、Mnの添加量を1at%(比較例16-20)、2at%(比較例21-25)、4at%(比較例26-30)と変化させて、それぞれ比較例1と同様の方法を用いて、合金インゴット及びスパッタリングターゲットを作製した。その結果、いずれも酸素が3wtppm以上と、酸素の低減が十分でなかった。また、実施例1と同様に、スパッタリングを実施し、パーティクル数を計測したところ、Life全体を通して最大14個以上と増加していた。
Claims (7)
- 荷電粒子放射化分析による、酸素含有量が0.6wtppm以下、又は、酸素含有量が2wtppm以下かつ炭素含有量が0.6wtppm以下であることを特徴とする銅合金スパッタリングターゲット。
- 合金元素が、Cuよりも酸素又は炭素との親和力が大きい元素の一種以上であることを特徴とする請求項1記載の銅合金スパッタリングターゲット。
- 銅原料を真空又は不活性ガス雰囲気中で溶解し、その後、溶解中の雰囲気に還元ガスを付加し、次いで、合金元素を溶湯に添加して合金化し、得られた合金インゴットをターゲット形状に加工することを特徴とする銅合金スパッタリングターゲットの製造方法。
- 還元ガスが、水素又は一酸化炭素からなることを特徴とする請求項3記載の銅合金スパッタリングターゲットの製造方法。
- 溶解工程は、プラズマアーク溶解法、電子ビーム溶解法、誘導溶解法により行うことを特徴とする請求項3又は4記載の銅合金スパッタリングターゲットの製造方法。
- それぞれの溶解処理は、異なる坩堝内で溶解を行うことを特徴とする請求項3~5のいずれか一項に記載の銅合金スパッタリングターゲットの製造方法。
- 銅を水冷銅坩堝に導入し、アルゴン雰囲気中でプラズマアーク溶解法により溶解し、その後、溶解中の雰囲気に水素ガスを付加し、次いで、溶湯を次段の水冷銅坩堝に導入し、合金元素を添加した後、プラズマアーク溶解法により合金化し、得られたインゴットを鍛造、圧延、熱処理を経て、スパッタリングターゲット素材とし、このターゲット素材を機械加工して、ターゲット形状に加工することを特徴とする請求項3~6のいずれか一項に記載の銅合金スパッタリングターゲットの製造方法。
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CN113737011B (zh) * | 2021-09-08 | 2023-11-07 | 宁波江丰电子材料股份有限公司 | 一种超高纯铜锰合金的制备方法 |
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US10494712B2 (en) | 2019-12-03 |
JP6720087B2 (ja) | 2020-07-08 |
JP2020117806A (ja) | 2020-08-06 |
KR20170088418A (ko) | 2017-08-01 |
CN107109633B (zh) | 2020-08-11 |
EP3211117A1 (en) | 2017-08-30 |
JPWO2016186070A1 (ja) | 2018-03-08 |
CN107109633A (zh) | 2017-08-29 |
US20170342546A1 (en) | 2017-11-30 |
TW201704486A (zh) | 2017-02-01 |
EP3211117A4 (en) | 2018-04-04 |
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