WO2016185920A1 - Semiconductor device for power - Google Patents

Semiconductor device for power Download PDF

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Publication number
WO2016185920A1
WO2016185920A1 PCT/JP2016/063703 JP2016063703W WO2016185920A1 WO 2016185920 A1 WO2016185920 A1 WO 2016185920A1 JP 2016063703 W JP2016063703 W JP 2016063703W WO 2016185920 A1 WO2016185920 A1 WO 2016185920A1
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WO
WIPO (PCT)
Prior art keywords
press
power semiconductor
connector
terminal
semiconductor device
Prior art date
Application number
PCT/JP2016/063703
Other languages
French (fr)
Japanese (ja)
Inventor
裕史 川島
藤野　純司
稔 江草
中川　信也
智典 田中
Original Assignee
三菱電機株式会社
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Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to DE112016002302.2T priority Critical patent/DE112016002302B4/en
Priority to JP2017519118A priority patent/JP6316504B2/en
Priority to CN201680009619.6A priority patent/CN107210279B/en
Publication of WO2016185920A1 publication Critical patent/WO2016185920A1/en

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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Definitions

  • the present invention relates to a configuration and a terminal shape of a power semiconductor device in which terminals are formed on a main surface of a package.
  • SiC silicon carbide
  • Si silicon carbide
  • Patent Document 4 proposes a power semiconductor device in which a power semiconductor element is sealed with a resin and a connector into which a press-fit terminal is inserted is provided on the main surface of the sealing body.
  • a power semiconductor device of Patent Document 4 through holes are formed in a plurality of lead patterns connected to the power semiconductor element and the circuit member, and the through holes communicate with the connector. Since each lead pattern is configured to be connected in an integrated lead frame at least before sealing, the connector can be accurately arranged.
  • JP 2007-184315 A (paragraphs 0021 and 0029, FIG. 1 and FIG. 3) JP-A-11-219738 (paragraphs 0010 to 0016, FIGS. 1 and 2) JP 2004-350377 A (paragraphs 0015 to 0027, FIGS. 1 and 2) JP 2013-152966 A (paragraphs 0033 to 0038, FIG. 1)
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a small and highly reliable power semiconductor device by increasing the holding force between a press-fit terminal and a connector.
  • the power semiconductor device of the present invention is connected to one of the power semiconductor element joined to the circuit surface of the circuit board and the circuit member installed on the circuit surface side including the power semiconductor element on each end side, A plurality of lead patterns having through holes at predetermined positions on the other end side, a sealing body formed by sealing the circuit member and the circuit surface to have a main surface substantially parallel to the circuit surface, and a plurality of leads Corresponding to each through hole of the pattern, a female connector formed from the main surface of the sealing body toward the circuit surface, and a press-fit terminal having a connector insertion terminal fixed to the female connector are provided. It is characterized by.
  • the connector insertion terminal is provided on the distal end side of the female connector, the anchor portion is fixed to the bottom and side surfaces of the female connector, the insertion depth is smaller than the anchor portion, and the lead pattern And a press-fit portion connected to the through hole.
  • the power semiconductor device of the present invention has the press fit terminal connected to the through hole of the lead pattern and the anchor part fixed to the bottom and the side surface of the female connector, the press fit terminal and the connector.
  • the holding force can be increased, and the size can be reduced and the reliability can be increased.
  • FIG. 1 is a top view of a power semiconductor device according to a first embodiment of the present invention. It is sectional drawing of the semiconductor device for electric power of FIG.
  • FIG. 2 is a top view of a lead frame used for manufacturing the power semiconductor device of FIG. 1. It is a figure which shows the cross section and press fit terminal of the connector part of FIG. It is a figure which shows the press fit terminal of FIG. It is a figure which shows the cross section of the connector part of FIG. It is a figure which shows the module in the middle of manufacture of the power semiconductor device of FIG. It is a figure explaining the manufacturing process of the power semiconductor device of FIG. It is a figure explaining the manufacturing process of the power semiconductor device of FIG.
  • FIG. 1 is a top view of the power semiconductor device according to the first embodiment of the present invention
  • FIG. 2 is a cross-sectional view of the power semiconductor device of FIG.
  • FIG. 3 is a top view of a lead frame used for manufacturing the power semiconductor device of FIG. 1
  • FIG. 5 is a diagram showing the press-fit terminal of FIG. 1
  • FIG. 6 is a diagram showing a cross section of the connector portion of FIG. 2 is a cross-sectional view taken along line AA of FIG. 1, and is a longitudinal sectional view of the power semiconductor device.
  • the power semiconductor device 1 includes an external electrode such as a press for electrical connection with an external substrate or an external circuit to which the power semiconductor device 1 is connected.
  • Part 5 is provided.
  • FIG. 1 shows an example in which eight connector portions 5 are arranged on the main surface 4 f of the sealing body 4 and the press-fit terminals 2 are inserted into the respective connector portions 5.
  • the press-fit terminal 2 is an alloy containing copper, for example.
  • a switching element 11 and a rectifying element 12 as circuit members are joined to the back electrode side by solder 7 at predetermined positions on the surface (circuit surface 6f) of a heat spreader 6 used as a circuit board.
  • the switching element 11 and the rectifying element 12 are power semiconductor elements 8.
  • the rectifying element 12 is, for example, an IGBT (Insulated Gate Bipolar Transistor).
  • the switching element 11 is, for example, FwDi (Free Wheeling Diode).
  • the lead pattern 23 is joined to the main power surface electrode of the power semiconductor element 8 by the solder 7, and the gate electrode of the switching element 11 is electrically connected to the lead pattern 24 by the gold wire 9.
  • circuit members other than the power semiconductor element 8 are also provided on the circuit surface 6 f and are also electrically connected to either the lead pattern 23 or the lead pattern 24.
  • the lead frame 21 is formed by punching a copper plate having a thickness of 1 mm, and the lead pattern 23, the four lead patterns 24, and the lead pattern 25 are connected to the lead frame 22 via the connecting portion 26. It is connected to.
  • each lead pattern portion located on the heat spreader 6 is stepped so as to sink to the heat spreader 6 side than the rest.
  • a through hole 21 h having a diameter of 2 mm for forming the connector portion 5 at a predetermined position is provided in a part of the lead pattern 23, the lead pattern 24 and the lead pattern 25.
  • the inner diameter portion 21hi of the through hole 21h is a side surface that penetrates each lead pattern.
  • Each lead pattern is connected to the lead frame 22 and integrated as a lead frame 21 until the trimming step in the method of manufacturing the power semiconductor device 1 described later. That is, the positional relationship of the through holes 21 h formed for each lead pattern is accurately maintained in a state where the lead patterns are connected in the lead frame 21.
  • the lead pattern 25 is electrically connected to the back electrode of the power semiconductor element 8 by joining the circuit surface 6 f of the heat spreader 6 and the solder 7.
  • the wiring member for connecting the electrode of the power semiconductor element 8 and the outside may not be the lead frame lead pattern, but may be a glass epoxy substrate, and the through hole may be replaced with a glass epoxy substrate through hole. To do.
  • a copper foil 15 is attached to the back side of the heat spreader 6 in which a power circuit is formed on the circuit surface 6f side via an insulating layer 14, and the back surface portion of the copper foil 15 is excluded.
  • the region is sealed.
  • the resin sealing body 4 having a main surface 4f substantially parallel to the formed circuit surface 6f has a rectangular plate shape as a whole.
  • the main surface 4f of the sealing body 4 is formed so as to be recessed from the main surface 4f toward the circuit surface 6f with respect to each of the through-holes 21h, and communicates with the corresponding through-holes 21h.
  • a connector portion 5 that functions as a female connector for inserting the terminal 2 is formed.
  • the connector 5 is provided with a terminal fixing portion (main surface opening) 5c having a diameter d1 of 3 mm on the main surface 4f of the sealing body 4, and a diameter d2 of 2 mm from the middle. It is formed so as to pass through the through hole 21h via the cylindrical part 5hu, further form the cylindrical part 5hd, and reach the bottom part 5b.
  • the terminal fixing portion 5c has a cylindrical shape with a diameter d1 of 3 mm, and the cylindrical portions 5hu and 5hd have a cylindrical shape with a diameter d2 of 2 mm.
  • the inner diameter portion 21hi of the through hole 21h has a cylindrical shape in which the inside is exposed.
  • the connector portion 5 has a two-stage cylindrical shape composed of two cylindrical shapes that are concentric and have different diameters.
  • the example of the depth dimension of the connector part 5 is shown.
  • the depth l4 from the main surface 4f to the bottom portion 5b is 7 mm
  • the depth l1 from the main surface 4f to the terminal fixing portion bottom surface (main surface opening bottom surface) 5cb of the terminal fixing portion 5c is 1 mm
  • the cylindrical portion 5hu Depth 12 is 2 mm
  • the depth tl of the through hole 21 h of the lead pattern 23 which is the conductive portion is 1 mm
  • the depth 13 of the cylindrical portion 5 hd is 3 mm.
  • the depth (extension part depth) le of the extension part 5e from the cylindrical part 5hu to the bottom part 5b is 6 mm.
  • the depth tl of the through hole 21 h is also the pattern plate thickness of the lead pattern 23. 4 and 6 show the connector portion 5 in the lead pattern 23, the connector portion 5 in the lead patterns 24 and 25 is the same. In FIG. 4, the connector part 5 in which the press-fit terminal 2 is inserted and the connector part 5 in which the press-fit terminal 2 is not inserted are shown.
  • the press-fit terminal 2 includes a straight portion (body portion) 2s, a connector insertion terminal 2a, and a board insertion terminal 2b.
  • the connector insertion terminal 2a is inserted into the connector portion 5.
  • the straight portion 2s has a width Ws in the short direction of the press-fit terminal 2 and is linear in the longitudinal direction of the press-fit terminal 2.
  • the connector insertion terminal 2a includes a press-fit portion 2p having a width Wf and an anchor portion 2n having a width Wa.
  • the thickness ts of the press-fit terminal 2 may be a thickness that does not cause twisting or warping when the press-fit terminal 2 is inserted into the connector portion 5.
  • the connector insertion terminal 2a, the anchor portion 2n, and the board insertion terminal 2b are each formed in a frame shape that is hollowed out inside.
  • the straight portion 2 s having the width Ws comes into contact with the terminal fixing portion bottom surface 5 cb of the terminal fixing portion 5 c of the connector portion 5.
  • the insertion position of the press-fit terminal 2 in the vertical direction is fixed.
  • the diameter d1 of the terminal fixing portion 5c is desirably designed in accordance with the width Ws of the straight portion 2s.
  • the width Wf of the press fit portion 2p is larger than the diameter d2 of the inner diameter portion 21hi in the through hole 21h formed in each lead pattern. For this reason, when the press-fit portion 2p is inserted into the connector portion 5, the press-fit portion 2p is compressively deformed according to the diameter d2 of the inner diameter portion 21hi that is a conductor, and the repulsion causes a predetermined amount or more between the inner diameter portion 21hi. Is applied to the inner diameter portion 21hi of the through hole 21h and fixed.
  • the width Wa of the anchor part 2n is smaller than the diameter d2 of the inner diameter part 21hi. For this reason, the anchor portion 2n comes into contact with the bottom portion 5b of the connector portion 5 when the press-fit terminal 2 is inserted, and is plastically deformed to come into contact with the cylindrical portion 5hd. When the press-fit terminal 2 is further pushed in, the anchor portion 2n is compressed and deformed, and the anchor portion 2n is fixed to the tubular portion 5hd of the connector portion 5 by a repulsive force from the tubular portion 5hd.
  • a connector insertion terminal having a length from the straight portion bottom surface (body portion bottom surface) 2sb of the straight portion 2s to the lower surface of the anchor portion 2n
  • the length la needs to be longer than the depth le of the extending portion 5e, which is the depth from the tubular portion 5hu to the bottom portion 5b of the connector portion 5.
  • the press-fit terminal 2 before insertion has a cylindrical insertion portion 5hd with which the anchor portion 2n comes into contact if the relationship that the connector insertion terminal length la is longer than the extension portion depth le of the connector portion 5 is maintained.
  • the depth may be 3 mm or less.
  • the diameter d2 of the inner diameter portion 21hi of the through hole 21h formed in the lead patterns 23, 24, and 25 may be other than 2 mm.
  • the diameter d2 and the depth tl of the inner diameter portion 21hi of the through hole 21h are such that when the press fit terminal 2 is inserted into the connector portion 5, the press fit portion 2p is compressed and deformed according to the diameter d2 of the inner diameter portion 21hi that is a conductor.
  • the diameter and the depth are sufficient so that a predetermined pressure or more is applied to the inner diameter portion 21hi due to the repulsion.
  • FIG. 7 is a diagram showing a module in the middle of manufacturing the power semiconductor device of FIG. 8 and 9 are diagrams illustrating a manufacturing process of the power semiconductor device of FIG.
  • FIG. 8 is a cross-sectional view of a state in which the module 1M is installed in the mold 90 in order to seal the module 1M having the semiconductor circuit formed on the circuit surface 6f.
  • FIG. 9 shows the trimming of the lead frame 21 immediately after sealing. It is sectional drawing of the semiconductor device 1 for electric power before performing. 7 to 9 show cut surfaces corresponding to the line AA in FIG.
  • the back electrode (cathode electrode, collector electrode) of the power semiconductor element 8 (switching element 11, rectifier element 12) by the solder 7 to a predetermined position on the surface of the heat spreader 6 to be the circuit surface 6f.
  • Circuit members (not shown) are installed, including the joining.
  • each lead pattern of the lead frame 21 such as joining of the circuit surface 6f to a predetermined position with the solder 7 and electrical connection using the gold wire 9 between the gate electrode of the switching element 11 and the lead pattern 24 of the lead frame 21; Make electrical connections with circuit members. Thereby, the wiring connection is completed, and a module 1M including a power circuit that forms a semiconductor switch including the switching element 11 and the rectifying element 12 is formed.
  • the module 1M including the power circuit is placed in a transfer mold 90 (upper mold 91, lower mold 92) with the copper foil 15 and the insulating layer 14 facing down.
  • the sleeve 91s and the pin 91p are disposed in a predetermined position corresponding to the position of the through hole 21h in the surface of the upper mold 91, and each pin 91p is inserted into the corresponding through hole 21h.
  • Position alignment (surface extension (horizontal) direction) is performed as described above.
  • a part of the lead frame 21 is sandwiched between the upper mold 91 and the lower mold 92, and the mold 90 is tightened so that the lead frame 22 comes out of the mold 90.
  • the module 1M in which the horizontal direction is positioned is also positioned in the vertical direction, and the relative position in the horizontal direction of each through hole 21h and the depth with respect to the main surface 4f can be accurately determined.
  • the circuit surface is as shown in FIG.
  • the sealing member 4 having the main surface 4f substantially parallel to the circuit surface 6f can be formed while sealing the circuit member 6f.
  • a pin 91p having a diameter adjusted so as to be in close contact with at least the inner diameter portion 21hi of the through hole 21h is inserted into the through hole 21h.
  • the portion where the pin 91p is inserted in the sealing body 4 is formed as the extending portion 5e of the connector portion 5 communicating with the through hole 21h of each lead pattern from the main surface 4f.
  • the portion of the sealing body 4 where the sleeve 91 s is inserted is formed as the terminal fixing portion 5 c of the connector portion 5.
  • the connector portion 5 having the extending portion 5e and the terminal fixing portion 5c that is, a two-stage cylindrical shape is formed.
  • the lead frame 22 of the lead frame 21 protruding from the sealing body 4 is removed.
  • the cut portion of the connecting portion 26 is exposed as shown in FIG. 2, but basically, the power semiconductor device 1 in which the circuit portion is packaged by the sealing body 4 is manufactured.
  • the anchor part 2n comes into contact with the bottom part 5b of the connector part 5 and compresses and deforms first. Thereafter, a deformation of the anchor portion 2n causes a compressive stress between the inner wall of the anchor portion 2n and the cylindrical portion 5hd, and the anchor portion 2n of the press-fit terminal 2 is fixed to the connector portion 5.
  • the press-fit portion 2p is fixed and electrically connected to the inner diameter portion 21hi of the lead frame.
  • the power semiconductor device 1 has the upper surface (main surface 4f) of the power semiconductor device 1 by arranging the plurality of connector portions 5 into which the press-fit terminals 2 can be inserted on the main surface 4f. ), It is possible to attach an external terminal such as the press-fit terminal 2, the power semiconductor device 1 can be miniaturized, and the mounting area on the external substrate can be reduced. Therefore, it is possible to reduce the size of the device on which the power semiconductor device 1 is mounted.
  • the power semiconductor device 1 uses a joint by compression deformation of the press-fit terminal 2 for connection to the connector portion 5, so that the temperature is lower than that of a conventional terminal structure connected by soldering. Terminals can be attached to the connector portion 5. As a result, it becomes possible to assemble the module without reheating and remelting or softening the solder 7 which is the joint portion of the power semiconductor element 8, and the reliability of the solder joint portion can be improved.
  • the connector portion 5 is formed by the pins 91p and the sleeve 91s provided in the upper mold 91, whereby the position of each connector portion 5 in the main surface 4f. Can be arranged as set. Moreover, since the pins 91p of the mold 90 are formed so as to be inserted into the through holes 21h provided in the lead frame 21, in each connector part 5, the center of the through hole 21h functioning as a conductive part and the resin The cylindrical portions 5hu and 5hd and the center of the terminal fixing portion 5c can be made to coincide with each other, and the distortion of the shaft in the connector portion 5 can be eliminated.
  • the power semiconductor device 1 of the first embodiment uses the press-fit terminal 2, no soldering equipment for mounting on an external substrate is required, and mounting is possible with a simple manual press. Can be greatly reduced.
  • the power semiconductor device 1 of the first embodiment can be easily mounted using a press-fit terminal (substrate insertion terminal 2b) even on a larger printed circuit board, and does not require know-how such as soldering. Therefore, workability is greatly improved.
  • the cross-sectional area of the terminal is larger than that of a general semiconductor device, and it is difficult to stabilize the temperature of the terminal during soldering.
  • the power semiconductor device 1 according to the first embodiment uses the press-fit terminal 2, it can be mounted by being easily pressed even if the cross-sectional area of the press-fit terminal 2 changes. improves.
  • the board insertion terminal 2b of the press-fit terminal 2 connected to the external board may be a soldering terminal or a spring terminal. That is, the board insertion terminal may be modified into various forms according to the needs of the user.
  • the straight portion bottom surface 2 sb of the straight portion 2 s of the press-fit terminal 2 contacts the terminal fixed portion bottom surface 5 cb of the terminal fixing portion 5 c of the connector portion 5.
  • the position of the press-fit terminal 2 with respect to the depth direction is determined.
  • the press-fit terminal 2 is inserted into the left and right (inserted) after the press-fit terminal 2 is inserted by matching the diameter d1 of the terminal fixing portion 5c with the straight portion 2s of the press-fit terminal 2. Even if it is swung in a direction perpendicular to the direction, the side surface of the terminal fixing portion 5c becomes a vibration stopper, and the load on the press fit portion 2p can be reduced.
  • the power semiconductor device 1 according to the first embodiment is fixed at two locations of the press-fit portion 2p and the anchor portion 2n by providing the press-fit terminal 2 connected to the connector portion 5 with the anchor portion 2n. become. Thereby, when the power semiconductor device 1 receives vibration from the outside, the anchor portion 2n holds the press-fit terminal 2 in addition to the press-fit portion 2p. High mechanical and electrical reliability against vibration and shock can be obtained.
  • the fin When attaching a fin to the exposed surface of the copper foil 15, the fin is pressed against the power semiconductor device 1 for attachment.
  • the anchor portion 2n since the anchor portion 2n is fixed to the bottom portion 5b of the connector portion 5, the depth direction (connector portion) is applied to the press-fit portion 2p via the module 1M when the fin is attached. 5), the anchor portion 2n supports the connector portion 5, so that the press fit portion 2p is not displaced, and the quality when the external fin is attached is stabilized.
  • the connector part 5 in this case also has a two-stage cylindrical shape. Since the straight portion bottom surface 2sb of the straight portion 2s of the press-fit terminal 2 is in contact with each lead pattern, the protruding length of the entire press-fit terminal 2 in the power semiconductor device 1 can be matched.
  • the diameter of the terminal fixing part 5c of the connector part 5 may be the same as the diameter of the cylindrical part 5hu and the through hole 21h of each lead pattern. That is, the terminal fixing portion 5c is a portion from the main surface 4f to a portion where the straight portion bottom surface 2sb of the straight portion 2s of the press-fit terminal 2 is located.
  • the connector part 5 in this case is not a two-stage cylindrical shape but a normal cylindrical shape. In this case, since there is no terminal fixing portion bottom surface 5cb that defines the insertion length of the press-fit terminal 2, the insertion length of the press-fit terminal 2 is adjusted by an apparatus that presses the press-fit terminal 2. The insertion length of the press-fit terminal 2 is adjusted based on the increased reaction force from the press-fit terminal 2 and the distance between the main surface 4f and the upper surface of the straight portion 2s or the end of the board insertion terminal 2b.
  • FIG. 10 is a view showing another connector portion and mold pins according to Embodiment 1
  • FIG. 11 is a view showing the connector portion and press-fit terminals of FIG.
  • FIG. 10A shows the connector part 5 in a state where resin is injected into the mold 90
  • FIG. 10B shows the connector part 5 after being taken out from the mold 90. That is, the state shown in FIG. 10A is changed to the state shown in FIG.
  • the tip of the pin 91p (first pin) shown in FIG. 8 has a cylindrical shape, but the tip of the pin 91p (second pin) shown in FIG. It is a truncated cone composed of a pin taper portion 91t.
  • the tip shape of the pin 91p is transferred to the bottom shape of the bottom portion 5b in the connector portion 5 as shown in FIG. That is, the bottom shape of the bottom portion 5b in the connector portion 5 is a truncated cone having a flat bottom surface and a bottom surface taper portion 5bt.
  • the power semiconductor device 1 including the connector portion 5 having the bottom taper portion 5bt provided at the tip portion is sealed as shown in FIG. 11 when the anchor portion 2n of the press-fit terminal 2 is compressed and deformed. Since it becomes easy to contact the sealing resin for forming the stationary body 4 and the contact area between the anchor portion 2n and the connector portion 5 increases, the holding force of the press-fit terminal 2 can be increased.
  • FIG. 12 is a view showing still another connector portion and mold pins according to Embodiment 1
  • FIG. 13 is a view showing the connector portion and press-fit terminals of FIG.
  • FIG. 12A shows the connector portion 5 in a state where resin is injected into the mold 90
  • FIG. 12B shows the connector portion 5 after being taken out from the mold 90. That is, the state shown in FIG. 12A is changed to the state shown in FIG.
  • the pin 91p (third pin) shown in FIG. 12 (a) has a hemispherical shape having a circular portion 91c at its tip.
  • the tip shape of the pin 91p is transferred to the bottom shape of the bottom portion 5b in the connector portion 5 as shown in FIG. That is, the bottom shape of the bottom portion 5b in the connector portion 5 is a hemispherical shape composed of the circular portion 91c.
  • the power semiconductor device 1 including the connector portion 5 with the circular portion 91c provided at the tip portion has the anchor portion 2n as shown in FIG. 13 when the press-fit terminal 2 is inserted into the connector portion 5. For this deformation, a larger contact area than that of the first pin or the second pin can be obtained, and the holding force of the press-fit terminal 2 can be further increased.
  • the power semiconductor device 1 of the first embodiment is installed on the power semiconductor element 8 bonded to the circuit surface 6f of the circuit board 3 and on the circuit surface 6f side including the power semiconductor element 8 on one end side.
  • a plurality of lead patterns 23, 24, 25 having a through hole at a predetermined position on the other end side, and the circuit member and the circuit surface 6f are sealed to be connected to any of the circuit members, and the circuit surface 6f.
  • the connector insertion terminal 2a is provided on the distal end side of insertion into the female connector (connector portion 5), and is fixed to the bottom (bottom portion 5b) and side surface (tubular portion 5hd) of the female connector (connector portion 5).
  • An anchor portion 2n and a press-fit portion 2p connected to the through holes 21h of the lead patterns 23, 24, and 25 are provided at a portion where the insertion depth is shallower than the anchor portion 2n.
  • the power semiconductor device 1 of the first embodiment has the anchor portion 2n in which the press-fit terminal 2 is fixed to the bottom (bottom portion 5b) and the side surface (tubular portion 5hd) of the female connector (connector portion 5). And the press-fit portion 2p connected to the through-hole 21h of the lead patterns 23, 24, and 25, the holding force between the press-fit terminal 2 and the connector (connector portion 5) can be increased, and the size and reliability are increased. be able to.
  • FIG. 14 is a diagram showing a press-fit terminal according to Embodiment 2 of the present invention, and is a diagram showing the press-fit terminal and connector portion of FIG.
  • FIG. 16 is a diagram for explaining the reaction force of the press-fit terminal of FIG.
  • the power semiconductor device 1 in the second embodiment is different from the first embodiment only in the shape of the terminal fixing portion 5c of the connector portion 5 and the shape of the anchor portion 2n of the press-fit terminal 2. Therefore, only this difference will be described below.
  • the anchor part 2n of the press-fit terminal 2 in FIG. 14 is made of a metal frame such as a copper frame having a width different from that of the outer periphery and the through hole (anchor part through hole) 2nh, and has three locations toward the inside of the through hole 2nh. It has a protrusion 2t. There are two protrusions 2t on the upper side of the anchor 2n and one on the lower side.
  • the reaction force 31 received from the bottom portion 5 b is generated in the depth direction of the connector portion 5, but the upper protrusion portion 2 t applies the reaction force 31 in the horizontal direction due to compression deformation of the protrusion portions 2 t. And is transmitted to the cylindrical part 5 hd of the connector part 5 in the direction of the reaction forces 32 and 33.
  • the power semiconductor device 1 of the second embodiment efficiently converts the stress in the depth direction of the connector portion 5 into the horizontal direction, and the anchor portion 2n of the press-fit terminal 2 and the cylindrical portion 5hd
  • the anchor portion 2n and the cylindrical portion 5hd are more firmly fixed than the configuration of the first embodiment.
  • the anchor part 2n of the press-fit terminal 2 is formed in a frame shape hollowed out inside, and the anchor part through hole (through hole 2nh) hollowed out inside
  • the two projections 2t different from the first projection are located on the press fit portion 2p side, and each of the projections 2t is located on the peripheral side in the width direction of the anchor portion 2n than the first projection.
  • the holding force between the press-fit terminal 2 and the connector portion 5 can be made higher than in the configuration of the first embodiment, and the size can be reduced and the reliability can be increased.
  • a surface taper portion 5st that is tapered so as to increase the opening area is provided on the surface side (the main surface 4f side of the sealing body 4) of the terminal fixing portion 5c.
  • the press-fit terminal 2 is finally inserted in parallel with the connector portion 5, and the press-fit joining quality is stabilized. Further, in the power semiconductor device 1 according to the second embodiment, the positional variation of the substrate insertion terminal 2b in the sealing body 4 is reduced, and good bonding quality can be obtained when the external substrate is mounted.
  • FIG. 17 is a view showing another press-fit terminal according to the second embodiment of the present invention
  • FIG. 18 is a view showing the press-fit terminal and the connector portion of FIG.
  • the fixing force between the anchor part 2n and the cylindrical part 5hd is slightly lower than when there are three protrusions 2t.
  • the anchor portion 2n and the cylindrical portion 5hd are fixed more firmly than the configuration of the first embodiment. Therefore, the power semiconductor device 1 to which the press fit terminal 2 of FIG. 17 is attached has the same effect as the power semiconductor device 1 to which the press fit terminal 2 of FIG. 14 is attached.
  • the anchor part 2n of the press-fit terminal 2 is formed in a frame shape hollowed out inside, and the anchor part through hole (through hole 2nh) hollowed out Since there are at least two protruding portions 2t toward the inside, the holding force between the press-fit terminal 2 and the connector portion 5 can be made higher than in the configuration of the first embodiment, and the size and reliability can be increased.
  • FIG. 19 is a diagram showing a press-fit terminal according to Embodiment 3 of the present invention
  • FIG. 20 is a diagram showing the press-fit terminal and connector portion of FIG. 21 and 22 are diagrams for explaining the angle adjusting action of the board insertion terminal of the press-fit terminal of FIG. 21 shows a state before the board insertion terminal 2b of the press-fit terminal 2 is inserted into the through hole 51 of the external board 50.
  • FIG. 22 shows the state where the board insertion terminal 2b of the press-fit terminal 2 is a through hole of the external board 50. 51 shows a state of being inserted.
  • the power semiconductor device 1 in the third embodiment is different from the first and second embodiments only in the shape of the press-fit terminal 2. Therefore, only this difference will be described below.
  • the press-fit terminal 2 of the third embodiment is different from the other press-fit terminals 2 of the second embodiment shown in FIG. 17 in the shape of the body part located between the connector insertion terminal 2a and the board insertion terminal 2b. .
  • the press-fit terminal 2 in FIG. 17 has the trunk portion only of the straight portion 2s.
  • the trunk portion 40 has the straight portion 2s and the curved bottom portion 41.
  • the straight portion 2 s is located on the board insertion terminal 2 b side in the body portion 40
  • the curved bottom surface portion 41 is located on the connector insertion terminal 2 a side in the body portion 40.
  • the curved bottom surface portion 41 protrudes toward the connector insertion terminal 2a side, that is, is curved in a convex shape.
  • the press-fit terminal 2 of the third embodiment may be a press-fit terminal in which the body portion of the press-fit terminal 2 of FIG. 5 in the first embodiment and the press-fit terminal 2 of FIG. 14 of the second embodiment is changed.
  • the reference numeral 40 is not attached to the body portion, but the straight portion 2 s of the press-fit terminal 2 in Embodiments 1 and 2 is also the body portion 40.
  • the press-fit terminal 2 of the third embodiment is different from the press-fit terminals 2 of the first and second embodiments in that the curved bottom surface portion 41 of the body portion 40 is in contact with the terminal fixing portion bottom surface 5cb. Instead, the curved bottom surface portion 41 of the body portion 40 comes into concentric contact with the end of the tubular portion 5hu, that is, the opening of the tubular portion 5hu.
  • the curved bottom surface portion 41 of the body portion 40 is concentrically contacted with the end portion of the cylindrical portion 5hu, that is, the opening portion of the cylindrical portion 5hu.
  • the board insertion terminal 2 b can be reliably inserted into the through hole 51 even when tilted with respect to the main surface of the semiconductor device 1.
  • the operation of the press-fit terminal 2 of the third embodiment will be described below.
  • FIG. 21 shows a case where the board insertion terminal 2b of the press-fit terminal 2 is inclined with respect to the main surface of the power semiconductor device 1, that is, the main surface 4f of the sealing body 4.
  • FIG. 21 shows an example in which the connector insertion terminal root portion 2ac of the connector insertion terminal 2a is bent and the body portion 40 and the board insertion terminal 2b are inclined with respect to the through hole center 52 of the through hole 51.
  • FIG. 21 shows an example in which the substrate insertion terminal root portion 2bc of the substrate insertion terminal 2b is not bent.
  • the curved bottom surface portion 41 is concentrically in contact with the end of the cylindrical portion 5hu, that is, the opening of the cylindrical portion 5hu.
  • the press-fit terminal 2 of the third embodiment has a curved bottom surface portion 41 of the body portion 40 as the board insertion terminal 2 b is inserted into the back side of the through hole 51 (upper side in FIG. 22).
  • the inclination of the board insertion terminal 2b is adjusted while the contact position of the cylindrical portion 5hu, that is, the opening position of the cylindrical portion 5hu moves. That is, in the press-fit terminal 2 of the third embodiment, the angle between the substrate insertion terminal shaft 53 passing through the tip of the substrate insertion terminal 2b and the center of the substrate insertion terminal root 2bc and the through-hole center 52 is small.
  • FIG. 22 shows an example in which the board insertion terminal 2 b is inserted into the through hole 51 so that the board insertion terminal shaft 53 of the board insertion terminal 2 b is parallel to the through hole center 52 of the through hole 51.
  • the board insertion terminal shaft 53 is not completely parallel to the through-hole center 52 and is slightly inclined. Even in this case, there is no problem because the angle of the board insertion terminal 2b can be adjusted. That is, the board insertion terminal 2 b may be inserted into the through hole 51 so that the board insertion terminal shaft 53 of the board insertion terminal 2 b is substantially parallel (substantially parallel) to the through hole center 52 of the through hole 51. .
  • the press-fit terminal 2 is provided on the bottom (bottom portion 5b) and the side surface (tubular portion 5hd) of the female connector (connector portion 5). Since it has a fixed anchor portion 2n and a press-fit portion 2p connected to the through holes 21h of the lead patterns 23, 24 and 25, the holding force between the press-fit terminal 2 and the connector (connector portion 5) can be increased, and the size can be reduced. Can increase reliability.
  • the press-fit terminal 2 since the inclination of the board insertion terminal 2b is adjusted when the board insertion terminal 2b is inserted into the through hole 51, the board insertion with respect to the through hole center 52 of the external board 50 is performed. Even if the position of the terminal 2b is deviated, the board insertion terminal 2b and the straight part 2s, for example, the board insertion terminal root part 2bc, is not bent and the insertion failure into the external board 50 does not occur. For this reason, in the power semiconductor device 1 to which the press-fit terminal 2 of the third embodiment is mounted, the incidence of defective insertion of the press-fit terminal 2 into the external substrate 50 is reduced, and the yield is improved.
  • FIG. 23 is a view showing a press-fit terminal according to Embodiment 4 of the present invention
  • FIG. 24 is a view showing the press-fit terminal and the first connector portion of FIG. 25 is a view of the first connector portion and the press-fit terminal of FIG. 24 as viewed from the direction B
  • FIG. 26 is a view of the first connector portion of FIG. 24 as viewed from the main surface side of the sealing body.
  • FIG. 27 is a diagram illustrating the press-fit terminal and the second connector portion of FIG. 28 is a view of the second connector portion and the press-fit terminal of FIG. 27 as viewed from the B direction
  • the power semiconductor device 1 according to the fourth embodiment differs from the first and second embodiments in the shapes of the press-fit terminal 2 and the connector portion 5. Therefore, only this difference will be described below.
  • the press-fit terminal 2 of the fourth embodiment is a press-fit terminal formed in a plate shape, and the shape of the body portion located between the connector insertion terminal 2a and the board insertion terminal 2b is the embodiment shown in FIG. This is different from other press-fit terminals 2 of the second form.
  • the press-fit terminal 2 of the fourth embodiment is different from the press-fit terminal 2 of FIG. 17 in that the straight portion 2s that is the body portion 40 has a hollow portion 42 that is hollowed out in a circular shape or an elliptic shape. . As shown in FIGS. 24 and 27, the hollow portion 42 is crushed and deformed by a load when the press-fit terminal 2 is inserted into the power semiconductor device 1.
  • FIG. 23 the example of the press fit terminal 2 which has the elliptical hollow part 42 was shown.
  • the press-fit terminal 2 according to the fourth embodiment when the hollow portion 42 is crushed when inserted into the power semiconductor device 1, a part of the straight portion 2 s expands in the width direction, and the terminal fixing portion in the connector portion 5 It contacts the side surface of 5c. At this time, a part of the straight portion 2 s bites into the side surface of the terminal fixing portion 5 c and exhibits an anchor effect, whereby the straight portion 2 s of the press-fit terminal 2 is fixed to the side surface of the terminal fixing portion 5 c in the connector portion 5.
  • the press-fit terminal 2 according to the fourth embodiment can have a higher holding force between the press-fit terminal 2 and the connector portion 5 than the press-fit terminal 2 in FIG. This is an effect of the press-fit terminal 2 having the hollow portion 42.
  • the power semiconductor device 1 to which the press-fit terminal 2 according to the fourth embodiment having the extraction portion 42 is attached can increase the holding force between the press-fit terminal 2 and the connector portion 5 and can increase the reliability.
  • the press-fit terminal 2 of the fourth embodiment is not limited to this, and is a press in which the body portion of the press-fit terminal 2 of FIG. 5 in the first embodiment and the press-fit terminal 2 of FIG. 14 of the second embodiment is changed. Fit terminals may be used.
  • 25 shows a cross section taken along line BB in FIG. 26
  • the first connector part 5 shown in FIG. 24 shows a cross section taken along line CC in FIG. Yes. 25 and 26
  • a part of the cylindrical portion 5hd of the connector portion 5 becomes narrower from the bottom surface of the lead pattern 23 toward the bottom portion 5b, and the bottom portion 5b becomes a width about the plate thickness of the press-fit terminal 2.
  • FIG. 26 shows an example in which four narrow bottom portions 43a, 43b, 43c, and 43d are provided in the bottom portion 5b.
  • the four narrow bottom portions 43a, 43b, 43c, and 43d are formed between the outer peripheral portion of the bottom portion 5b and each side of the broken-line quadrilateral 47.
  • Each narrow bottom portion 43a, 43b, 43c, 43d is formed narrower than the diameter of the through hole 21h of the lead patterns 23, 24, 25.
  • 24 shows an example in which the press-fit terminal 2 is inserted into the narrow bottom portion 43a and the narrow bottom portion 43b.
  • symbol of a narrow bottom part uses 43 generally, and uses 43a, 43b, 43c, 43d when distinguishing.
  • the first upper opening 44 is an opening of the connector part 5 formed in the main surface 4f of the sealing body 4, and the second upper opening 45 is an opening of the connector part 5 at the lower end of the surface taper part 5st.
  • the extension part opening 46 is an opening of the connector part 5 formed at the upper end part of the extension part 5e, that is, the upper end part of the cylindrical part 5hu.
  • the shape of the bottom portion 5b in the first connector portion 5 is a shape obtained by combining the broken line quadrilateral 47 and the four narrow bottom portions 43a, 43b, 43c, and 43d.
  • the connector insertion terminal 2a of the press-fit terminal 2 is the width of the press-fit terminal 2 in the plate thickness ts direction (FIG. 25, the front and back surfaces perpendicular to the plate thickness surface (the surface where the plate thickness ts can be seen) of the press-fit terminal 2 are the front and back surfaces. It moves along the inclination of the cylindrical part 5hd facing the back surface, that is, this cylindrical part 5hd serves as a guide to suppress the rotation of the press-fit terminal 2 in the direction indicated by the arrow 48 or 49, and press fit The terminal 2 is corrected in the vertical direction (the extending direction of the connector portion 5).
  • the connector part 5 of Embodiment 4 can be arranged so that the press-fit terminal 2 faces in the vertical direction (extending direction of the connector part 5) when the connector insertion terminal 2a of the press-fit terminal 2 reaches the narrow bottom parts 43a and 43b. . Therefore, the power semiconductor device 1 according to the fourth embodiment provided with such a connector portion 5 has the press-fit terminal 2 connected to the connector even when the press-fit terminal 2 is inserted with an inclination with respect to the extending direction of the connector portion 5. It can arrange
  • the press-fit terminal 2 only needs to have at least the connector insertion terminal 2a formed in a plate shape.
  • the press-fit terminal 2 in which the connector insertion terminal 2a is formed in a plate shape can be fixed to the narrow bottom portion 43 whose anchor portion 2n is narrower than the diameter of the through hole 21h of the lead patterns 23, 24, 25.
  • the connector insertion terminal 2a of the press-fit terminal 2 is disposed on the two narrow bottom portions 43a and 43b.
  • the connector portion 5 having one narrow bottom portion 43a is connected to the connector portion 5 having one narrow bottom portion 43a. Even when the connector insertion terminal 2a of the press-fit terminal 2 is arranged. Even in the case of the connector portion 5 having one narrow bottom portion 43a, one side of the connector insertion terminal 2a (the left side of the connector insertion terminal 2a in FIG. 24) is inserted and arranged in the narrow bottom portion 43a. Can be arranged so as to face the vertical direction (extending direction of the connector portion 5).
  • the length of the narrow bottom portion 43a that is, the width Wa and the length in the Wf direction of the press-fit terminal 2 (length in the left-right direction in FIG. 26) is long. Is preferable.
  • the connector portion 5 having a long narrow bottom portion 43a has a larger area for holding the connector insertion terminal 2a of the press-fit terminal 2, so that the press-fit terminal 2 has a higher accuracy than the connector portion 5 having a short length of the narrow bottom portion 43a.
  • 27 to 29 is an example in which one narrow bottom portion 43 is provided and the maximum narrow bottom portion length is provided.
  • 27 shows a cross section taken along line CC of FIG. 29
  • the second connector part 5 shown in FIG. 28 shows a cross section taken along line BB of FIG. Yes.
  • a part of the cylindrical portion 5 hd of the connector portion 5 becomes narrower from the bottom surface of the lead pattern 23 toward the bottom portion 5 b
  • the bottom portion 5 b is the press-fit terminal 2.
  • It has a narrow bottom 43 having a width of about the plate thickness.
  • the bottom portion 5 b is the narrow bottom portion 43, it can also be said that the bottom portion 5 b has a narrow bottom shape with a width of about the plate thickness of the press-fit terminal 2.
  • the power semiconductor device 1 according to the fourth embodiment including the second connector portion 5 has the press-fit terminal 2 connected to the press-fit terminal 2 even when the press-fit terminal 2 is inserted with an inclination with respect to the extending direction of the connector portion 5. It can arrange
  • the press-fit terminals 2 are provided on the bottom (bottom portion 5b) and the side surface (tubular portion 5hd) of the female connector (connector portion 5). Since it has a fixed anchor portion 2n and a press-fit portion 2p connected to the through holes 21h of the lead patterns 23, 24 and 25, the holding force between the press-fit terminal 2 and the connector (connector portion 5) can be increased, and the size can be reduced. Can increase reliability.
  • the power semiconductor element 8 functioning as the switching element (transistor) 11 or the rectifying element 12 may be a general element based on a silicon wafer, but in the present invention, A so-called wide band gap semiconductor material having a wider band gap than silicon such as silicon carbide (SiC), gallium nitride (GaN) -based material, or diamond can be used.
  • the power semiconductor device 1 of the present invention exhibits a particularly remarkable effect when a semiconductor element that is formed using a wide band gap semiconductor material and is capable of current tolerance and high-temperature operation is used. In particular, it can be suitably used for a power semiconductor element using silicon carbide.
  • the device type is not particularly limited, but may be a MOSFET (Metal Oxide Semiconductor Field-Effect-Transistor) other than the IGBT, or any other vertical semiconductor element.
  • the switching element 11 and the rectifying element 12 (power semiconductor element 8 in each embodiment) formed of a wide band gap semiconductor have lower power loss than the element formed of silicon, the switching element 11 and the rectifying element 12 The efficiency of the power semiconductor device 1 can be improved. Furthermore, since the withstand voltage is high and the allowable current density is high, the switching element 11 and the rectifying element 12 can be downsized. By using the downsized switching element 11 and rectifying element 12, a power semiconductor can be used. The apparatus 1 can also be reduced in size. In addition, since the heat resistance is high, it is possible to operate at high temperature, and it is possible to reduce the size of the heat dissipating fins (coolers) attached to the heat sink and the air cooling of the water cooling portion. Is possible.
  • the structure in which the connector portion 5 for electrical connection with the outside is formed on the main surface 4f side is essential for downsizing.
  • the connector portion 5 that is a female connector for connecting a terminal such as the press-fit terminal 2 is formed so as to communicate with the through hole 21h in the lead frame 21. Since the positional accuracy of each connector part 5 is high and the stress on the electrical connection is reduced, the reliability can be improved. That is, by exhibiting the effect of the present invention, the characteristics of the wide band gap semiconductor can be utilized.
  • both the switching element 11 and the rectifying element 12 may be formed of a wide band gap semiconductor, or one of the elements may be formed of a wide band gap semiconductor.
  • the sealing body forming method of Embodiments 1 to 4 is not limited to transfer molding, and may be injection molding or compression molding. The same effect can be obtained even if the resin is a thermosetting resin or a thermoplastic resin. .
  • the target package is not limited to the structure of the present invention, and the same effect can be obtained as long as the package has a lead frame and a substrate.
  • the terminal direction is not limited to the main surface direction of the package, and the press-fit terminal can be protruded in the side surface direction by deforming the internal lead frame by bending it vertically.
  • the same effect can be obtained by DIP (Dual Inline Package) or SIP (Single Inline Package) that protrudes the terminal from the side.
  • the contents of the respective embodiments can be freely combined, or the respective embodiments can be appropriately modified or omitted within a consistent range.

Abstract

The purpose of the present invention is to obtain a compact and high-reliability semiconductor device for power in which the holding power between a press-fit terminal and a connector is increased. This semiconductor device (1) for power is provided with: a plurality of lead patterns (23, 24, 25) having one end side connected to one of circuit members that includes a semiconductor element (8) for power and having through-holes at predetermined positions on the other end side; a sealing body (4) formed so as to seal the circuit members; female connectors (5) formed from a main surface (4f) towards a circuit surface (6f) of the sealing body (4); and press-fit terminals (2) having a connector insertion terminal secured to a female connector. The connector insertion terminals have: an anchor part provided toward the front end inserted into the female connector, the anchor part being secured to the bottom and the side surface of the female connector; and a press-fit part provided at a portion of lower insertion depth than that of the anchor part, the press-fit part being connected to a through hole of a lead pattern.

Description

電力用半導体装置Power semiconductor device
　本発明は、パッケージの主面に端子を形成する電力用半導体装置の構成及び端子形状に関するものである。 The present invention relates to a configuration and a terminal shape of a power semiconductor device in which terminals are formed on a main surface of a package.
　半導体装置の中でも電力用半導体装置は、産業用機器から民生用の家電・情報端末まで幅広い機器の主電力（パワー）の制御に用いられ、とくに輸送機器等においては高い信頼性が求められている。近年、とくに大電流を流すことができ、高温動作も可能なワイドバンドギャップ半導体材料である炭化珪素（ＳｉＣ）がシリコン（Ｓｉ）に代わる半導体材料として開発が進められている。一方、大電流に対応できるとともに、小型化が容易なパッケージ（封止体）形態も求められている。 Among semiconductor devices, power semiconductor devices are used for controlling the main power of a wide range of equipment, from industrial equipment to consumer electronics and information terminals. High reliability is particularly required for transportation equipment. . In recent years, silicon carbide (SiC), which is a wide band gap semiconductor material capable of flowing a particularly large current and capable of high-temperature operation, has been developed as a semiconductor material replacing silicon (Si). On the other hand, there is also a demand for a package (sealing body) form that can cope with a large current and that can be easily downsized.
　そこで、設置面積を低減するため、樹脂による封止体の側部に端子を形成する形態に代えて、封止体の主面に端子を形成する電力用半導体装置が提案されている（例えば、特許文献１参照。）。また、樹脂による封止体を形成したものではないが、穴の開いた絶縁基板の所定位置に貫通孔を有する複数のバスバーを固定し、バスバーと絶縁基板の孔を連通させてオス端子を挿入することで、主面上に端子を突出させるようにした配線板組立体や電気接続箱が提案されている（例えば、特許文献２または３参照。）。また、特許文献４には、電力用半導体素子が樹脂で封止され、封止体の主面にプレスフィット端子が挿入されるコネクタを設けた電力用半導体装置が提案されている。特許文献４の電力用半導体装置は、電力用半導体素子及び回路部材に接続される複数のリードパターンに貫通孔が形成され、貫通孔がコネクタに連通されている。各リードパターンは少なくとも封止前までは一体のリードフレーム内で連結するように構成しているので、コネクタを正確に配置できるようにしていた。 Then, in order to reduce an installation area, it replaces with the form which forms a terminal in the side part of the sealing body by resin, and the power semiconductor device which forms a terminal in the main surface of a sealing body is proposed (for example, (See Patent Document 1). Also, it is not a sealed body made of resin, but a plurality of bus bars with through-holes are fixed at predetermined positions on the insulating substrate with holes, and male terminals are inserted by connecting the holes of the bus bar and the insulating substrate. Thus, a wiring board assembly and an electrical junction box are proposed in which terminals are projected on the main surface (see, for example, Patent Document 2 or 3). Patent Document 4 proposes a power semiconductor device in which a power semiconductor element is sealed with a resin and a connector into which a press-fit terminal is inserted is provided on the main surface of the sealing body. In the power semiconductor device of Patent Document 4, through holes are formed in a plurality of lead patterns connected to the power semiconductor element and the circuit member, and the through holes communicate with the connector. Since each lead pattern is configured to be connected in an integrated lead frame at least before sealing, the connector can be accurately arranged.
特開２００７－１８４３１５号公報（段落００２１、００２９、図１、図３）JP 2007-184315 A (paragraphs 0021 and 0029, FIG. 1 and FIG. 3) 特開平１１－２１９７３８号公報（段落００１０～００１６、図１、図２）JP-A-11-219738 (paragraphs 0010 to 0016, FIGS. 1 and 2) 特開２００４－３５０３７７号公報（段落００１５～００２７、図１、図２）JP 2004-350377 A (paragraphs 0015 to 0027, FIGS. 1 and 2) 特開２０１３－１５２９６６号公報（段落００３３～００３８、図１）JP 2013-152966 A (paragraphs 0033 to 0038, FIG. 1)
　しかしながら、特許文献１～３のような電力用半導体装置では、複数の端子を絶縁基板に位置決めして接合する必要があり、端子間の位置精度を保つのは困難であった。そのため、動作中に接合部等に余計な力が加わることになり、電気接続部の劣化をまねき、信頼性を低下させる可能性があった。また、特許文献４の電力用半導体装置では、プレスフィット端子がコネクタに挿入された際に、コネクタの直径より大きなプレスフィット端子のプレスフィット部が圧縮変形することで、プレスフィット端子がリードパターンとの接点でのみ接触して保持されるので、端子の本数によっては外部からの強い振動に対しては保持力が十分でないことが想定される。そのため、使用時や実装時の振動などプレスフィット端子に強い応力がかかる際にも、十分な信頼性が必要となる場合がある。 However, in the power semiconductor devices as in Patent Documents 1 to 3, it is necessary to position and join a plurality of terminals to the insulating substrate, and it is difficult to maintain the positional accuracy between the terminals. For this reason, an extra force is applied to the joint or the like during operation, leading to deterioration of the electrical connection portion and possibly reducing reliability. Further, in the power semiconductor device of Patent Document 4, when the press-fit terminal is inserted into the connector, the press-fit portion of the press-fit terminal larger than the diameter of the connector is compressed and deformed, so that the press-fit terminal and the lead pattern are Therefore, depending on the number of terminals, it is assumed that the holding force is not sufficient for strong external vibration. Therefore, sufficient reliability may be required even when a strong stress is applied to the press-fit terminal, such as vibration during use or mounting.
　本発明は、上記のような課題を解決するためになされたもので、プレスフィット端子とコネクタとの保持力を高めて、小型で信頼性の高い電力用半導体装置を得ることを目的としている。 The present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a small and highly reliable power semiconductor device by increasing the holding force between a press-fit terminal and a connector.
　本発明の電力用半導体装置は、回路基板の回路面に接合された電力用半導体素子と、それぞれ一端側が電力用半導体素子を含む回路面側に設置された回路部材のいずれかと接続されるとともに、他端側の所定位置に貫通孔を有する複数のリードパターンと、回路部材と回路面を封止して回路面と略平行な主面を有するように形成された封止体と、複数のリードパターンのそれぞれの貫通孔に対応し、封止体の主面から回路面に向かって形成されたメス型コネクタと、メス型コネクタに固定されたコネクタ挿入端子を有するプレスフィット端子と、を備えることを特徴とする。コネクタ挿入端子は、メス型コネクタへの挿入先端側に設けられるとともに、メス型コネクタの底及び側面に固定されたアンカー部と、アンカー部よりも挿入深さが浅い部分に設けられるとともに、リードパターンの貫通孔に接続されたプレスフィット部と、を有することを特徴とする。 The power semiconductor device of the present invention is connected to one of the power semiconductor element joined to the circuit surface of the circuit board and the circuit member installed on the circuit surface side including the power semiconductor element on each end side, A plurality of lead patterns having through holes at predetermined positions on the other end side, a sealing body formed by sealing the circuit member and the circuit surface to have a main surface substantially parallel to the circuit surface, and a plurality of leads Corresponding to each through hole of the pattern, a female connector formed from the main surface of the sealing body toward the circuit surface, and a press-fit terminal having a connector insertion terminal fixed to the female connector are provided. It is characterized by. The connector insertion terminal is provided on the distal end side of the female connector, the anchor portion is fixed to the bottom and side surfaces of the female connector, the insertion depth is smaller than the anchor portion, and the lead pattern And a press-fit portion connected to the through hole.
　本発明の電力用半導体装置は、プレスフィット端子がメス型コネクタの底及び側面に固定されたアンカー部とリードパターンの貫通孔に接続されたプレスフィット部を有するので、プレスフィット端子とコネクタとの保持力を高くでき、小型で信頼性を高くすることができる。 Since the power semiconductor device of the present invention has the press fit terminal connected to the through hole of the lead pattern and the anchor part fixed to the bottom and the side surface of the female connector, the press fit terminal and the connector. The holding force can be increased, and the size can be reduced and the reliability can be increased.
本発明の実施の形態１による電力用半導体装置の上面図である。1 is a top view of a power semiconductor device according to a first embodiment of the present invention. 図１の電力用半導体装置の断面図である。It is sectional drawing of the semiconductor device for electric power of FIG. 図１の電力用半導体装置の製造に用いるリードフレームの上面図である。FIG. 2 is a top view of a lead frame used for manufacturing the power semiconductor device of FIG. 1. 図１のコネクタ部の断面及びプレスフィット端子を示す図である。It is a figure which shows the cross section and press fit terminal of the connector part of FIG. 図１のプレスフィット端子を示す図である。It is a figure which shows the press fit terminal of FIG. 図１のコネクタ部の断面を示す図である。It is a figure which shows the cross section of the connector part of FIG. 図１の電力用半導体装置の製造途中におけるモジュールを示す図である。It is a figure which shows the module in the middle of manufacture of the power semiconductor device of FIG. 図１の電力用半導体装置の製造工程を説明する図である。It is a figure explaining the manufacturing process of the power semiconductor device of FIG. 図１の電力用半導体装置の製造工程を説明する図である。It is a figure explaining the manufacturing process of the power semiconductor device of FIG. 実施の形態１による他のコネクタ部及び金型のピンを示す図である。It is a figure which shows the other connector part by Embodiment 1, and the pin of a metal mold | die. 図１０のコネクタ部及びプレスフィット端子を示す図である。It is a figure which shows the connector part and press fit terminal of FIG. 実施の形態１による更に他のコネクタ部及び金型のピンを示す図である。It is a figure which shows the further another connector part by Embodiment 1, and the pin of a metal mold | die. 図１２のコネクタ部及びプレスフィット端子を示す図である。It is a figure which shows the connector part and press fit terminal of FIG. 本発明の実施の形態２によるプレスフィット端子を示す図である。It is a figure which shows the press fit terminal by Embodiment 2 of this invention. 図１４のプレスフィット端子及びコネクタ部を示す図である。It is a figure which shows the press fit terminal and connector part of FIG. 図１４のプレスフィット端子の反力を説明する図である。It is a figure explaining the reaction force of the press fit terminal of FIG. 本発明の実施の形態２による他のプレスフィット端子を示す図である。It is a figure which shows the other press fit terminal by Embodiment 2 of this invention. 図１７のプレスフィット端子及びコネクタ部を示す図である。It is a figure which shows the press fit terminal and connector part of FIG. 本発明の実施の形態３によるプレスフィット端子を示す図である。It is a figure which shows the press fit terminal by Embodiment 3 of this invention. 図１９のプレスフィット端子及びコネクタ部を示す図である。It is a figure which shows the press fit terminal and connector part of FIG. 図１９のプレスフィット端子の基板挿入端子の角度調整作用を説明する図である。It is a figure explaining the angle adjustment effect | action of the board | substrate insertion terminal of the press fit terminal of FIG. 図１９のプレスフィット端子の基板挿入端子の角度調整作用を説明する図である。It is a figure explaining the angle adjustment effect | action of the board | substrate insertion terminal of the press fit terminal of FIG. 本発明の実施の形態４によるプレスフィット端子を示す図である。It is a figure which shows the press fit terminal by Embodiment 4 of this invention. 図２３のプレスフィット端子及び第一のコネクタ部を示す図である。It is a figure which shows the press fit terminal and 1st connector part of FIG. 図２４の第一のコネクタ部及びプレスフィット端子をＢ方向から見た図である。It is the figure which looked at the 1st connector part and press fit terminal of Drawing 24 from the B direction. 図２４の第一のコネクタ部を封止体の主面側から見た図である。It is the figure which looked at the 1st connector part of FIG. 24 from the main surface side of the sealing body. 図２３のプレスフィット端子及び第二のコネクタ部を示す図である。It is a figure which shows the press fit terminal and 2nd connector part of FIG. 図２７の第二のコネクタ部及びプレスフィット端子をＢ方向から見た図である。It is the figure which looked at the 2nd connector part and press fit terminal of FIG. 27 from the B direction. 図２７の第二のコネクタ部を封止体の主面側から見た図である。It is the figure which looked at the 2nd connector part of FIG. 27 from the main surface side of the sealing body.
実施の形態１．
　図１は本発明の実施の形態１による電力用半導体装置の上面図であり、図２は図１の電力用半導体装置の断面図である。図３は図１の電力用半導体装置の製造に用いるリードフレームの上面図であり、図４は図１のコネクタ部の断面及びプレスフィット端子を示す図である。図５は図１のプレスフィット端子を示す図であり、図６は図１のコネクタ部の断面を示す図である。図２の断面図は図１のＡ－Ａ線による切断面であって、電力用半導体装置の長手方向断面図である。 Embodiment 1 FIG.
1 is a top view of the power semiconductor device according to the first embodiment of the present invention, and FIG. 2 is a cross-sectional view of the power semiconductor device of FIG. FIG. 3 is a top view of a lead frame used for manufacturing the power semiconductor device of FIG. 1, and FIG. 5 is a diagram showing the press-fit terminal of FIG. 1, and FIG. 6 is a diagram showing a cross section of the connector portion of FIG. 2 is a cross-sectional view taken along line AA of FIG. 1, and is a longitudinal sectional view of the power semiconductor device.
　はじめに、電力用半導体装置１の構成について説明する。図１、図２に示すように、本実施の形態１にかかる電力用半導体装置１は、電力用半導体装置１を接続する外部基板や外部回路との電気接続を行うための外部電極、例えばプレスフィット端子２と、電力用半導体素子８等を含む回路部材を内包する略矩形のパッケージ（封止体）４の主面４ｆ側にプレスフィット端子２を挿入するためのメス型コネクタとして機能するコネクタ部５を備えている。図１では、封止体４の主面４ｆに８個のコネクタ部５が配置され、それぞれのコネクタ部５にプレスフィット端子２が挿入されている例を示した。プレスフィット端子２は、例えば銅を含む合金である。 First, the configuration of the power semiconductor device 1 will be described. As shown in FIGS. 1 and 2, the power semiconductor device 1 according to the first embodiment includes an external electrode such as a press for electrical connection with an external substrate or an external circuit to which the power semiconductor device 1 is connected. A connector that functions as a female connector for inserting the press-fit terminal 2 into the main surface 4f side of a substantially rectangular package (sealing body) 4 containing a circuit member including the fit terminal 2 and the power semiconductor element 8 and the like. Part 5 is provided. FIG. 1 shows an example in which eight connector portions 5 are arranged on the main surface 4 f of the sealing body 4 and the press-fit terminals 2 are inserted into the respective connector portions 5. The press-fit terminal 2 is an alloy containing copper, for example.
　図２に示すように、回路基板として用いるヒートスプレッダ６の表面（回路面６ｆ）の所定位置に、回路部材であるスイッチング素子１１及び整流素子１２が裏面電極側をはんだ７によって接合されている。スイッチング素子１１、整流素子１２は、電力用半導体素子８である。整流素子１２は、例えばＩＧＢＴ（Insulated　Gate　Bipolar　Transistor）である。スイッチング素子１１は、例えば、ＦｗＤｉ（Free　Wheeling　Diode）である。そして、電力用半導体素子８の主電力用の表面電極にリードパターン２３がはんだ７により接合され、スイッチング素子１１のゲート電極は金のワイヤ９によりリードパターン２４と電気接続されている。なお、スイッチング素子１１、整流素子１２の表面にはアルミニウムメタライズ電極上に金メタライズが施されており、はんだ付けが可能となっている。なお、簡略化のため図示しないが、回路面６ｆ上には電力用半導体素子８以外の回路部材も設置されており、それらもリードパターン２３、リードパターン２４のいずれかと電気接続されている。 As shown in FIG. 2, a switching element 11 and a rectifying element 12 as circuit members are joined to the back electrode side by solder 7 at predetermined positions on the surface (circuit surface 6f) of a heat spreader 6 used as a circuit board. The switching element 11 and the rectifying element 12 are power semiconductor elements 8. The rectifying element 12 is, for example, an IGBT (Insulated Gate Bipolar Transistor). The switching element 11 is, for example, FwDi (Free Wheeling Diode). The lead pattern 23 is joined to the main power surface electrode of the power semiconductor element 8 by the solder 7, and the gate electrode of the switching element 11 is electrically connected to the lead pattern 24 by the gold wire 9. Note that the surfaces of the switching element 11 and the rectifying element 12 are gold metallized on an aluminum metallized electrode and can be soldered. Although not shown for simplification, circuit members other than the power semiconductor element 8 are also provided on the circuit surface 6 f and are also electrically connected to either the lead pattern 23 or the lead pattern 24.
　図３に示すように、リードフレーム２１は、板厚１ｍｍの銅板を打ち抜き形成されており、リードパターン２３と、４つのリードパターン２４と、リードパターン２５とが連結部２６を介してリード枠２２に連結されている。図２に示すように、ヒートスプレッダ６上に位置する各リードパターンの部分はそれ以外よりもヒートスプレッダ６側に沈めるように段差付を行っている。図３に示すように、リードパターン２３、リードパターン２４、リードパターン２５の一部には、所定位置にコネクタ部５を形成するための直径２ｍｍの貫通孔２１ｈが設けられている。貫通孔２１ｈの内径部２１ｈｉは、各リードパターンを貫く側面である。そして、各リードパターンは、後述する電力用半導体装置１の製造方法におけるトリミングの工程までは、リード枠２２と連結されており、リードフレーム２１として一体となっている。つまり、リードパターンごとに形成された貫通孔２１ｈは、各リードパターンがリードフレーム２１内で連結されている状態では、それぞれの位置関係が正確に維持されることになる。なお、図２では示されないが、リードパターン２５は、ヒートスプレッダ６の回路面６ｆとはんだ７により接合することで、電力用半導体素子８の裏面電極と電気接続されている。 As shown in FIG. 3, the lead frame 21 is formed by punching a copper plate having a thickness of 1 mm, and the lead pattern 23, the four lead patterns 24, and the lead pattern 25 are connected to the lead frame 22 via the connecting portion 26. It is connected to. As shown in FIG. 2, each lead pattern portion located on the heat spreader 6 is stepped so as to sink to the heat spreader 6 side than the rest. As shown in FIG. 3, a through hole 21 h having a diameter of 2 mm for forming the connector portion 5 at a predetermined position is provided in a part of the lead pattern 23, the lead pattern 24 and the lead pattern 25. The inner diameter portion 21hi of the through hole 21h is a side surface that penetrates each lead pattern. Each lead pattern is connected to the lead frame 22 and integrated as a lead frame 21 until the trimming step in the method of manufacturing the power semiconductor device 1 described later. That is, the positional relationship of the through holes 21 h formed for each lead pattern is accurately maintained in a state where the lead patterns are connected in the lead frame 21. Although not shown in FIG. 2, the lead pattern 25 is electrically connected to the back electrode of the power semiconductor element 8 by joining the circuit surface 6 f of the heat spreader 6 and the solder 7.
　なお、電力用半導体素子８の電極と外部とを接続する配線部材はリードフレームのリードパターンでなくとも、ガラスエポキシ基板でもよく、貫通孔はガラスエポキシ基板のスルーホールに置き換えて構成しても成立する。 The wiring member for connecting the electrode of the power semiconductor element 8 and the outside may not be the lead frame lead pattern, but may be a glass epoxy substrate, and the through hole may be replaced with a glass epoxy substrate through hole. To do.
　図２に示すように、回路面６ｆ側に電力回路が形成されたヒートスプレッダ６の裏側には、絶縁層１４を介して銅箔１５が貼りつけられており、銅箔１５の裏面部分を除いた領域が封止される。形成された回路面６ｆに略平行の主面４ｆを有する樹脂の封止体４は、全体が矩形板状をなす。封止体４から露出した銅箔１５の露出部は電力用半導体装置１が完成した後、外部基板に実装されたのちフィンなどの冷却器を取り付けて使用される。そして、封止体４の主面４ｆには、貫通孔２１ｈのそれぞれに対して、主面４ｆから回路面６ｆに向かって窪むように形成されるとともに、対応する貫通孔２１ｈに連通し、プレスフィット端子２を挿入するためのメス型コネクタとして機能するコネクタ部５が形成されている。 As shown in FIG. 2, a copper foil 15 is attached to the back side of the heat spreader 6 in which a power circuit is formed on the circuit surface 6f side via an insulating layer 14, and the back surface portion of the copper foil 15 is excluded. The region is sealed. The resin sealing body 4 having a main surface 4f substantially parallel to the formed circuit surface 6f has a rectangular plate shape as a whole. After the power semiconductor device 1 is completed, the exposed portion of the copper foil 15 exposed from the sealing body 4 is mounted on an external substrate and then attached with a cooler such as a fin. The main surface 4f of the sealing body 4 is formed so as to be recessed from the main surface 4f toward the circuit surface 6f with respect to each of the through-holes 21h, and communicates with the corresponding through-holes 21h. A connector portion 5 that functions as a female connector for inserting the terminal 2 is formed.
　コネクタ部５は、図４、図６に示すように、封止体４の主面４ｆに直径ｄ１が３ｍｍの端子固定部（主面開口部）５ｃが設けられ、途中から直径ｄ２が２ｍｍの筒状部５ｈｕを経由して貫通孔２１ｈを通り、さらに筒状部５ｈｄを形成し、底部５ｂに至るように形成される。端子固定部５ｃは直径ｄ１が３ｍｍの円筒形であり、筒状部５ｈｕ、５ｈｄは直径ｄ２が２ｍｍの円筒形である。貫通孔２１ｈの内径部２１ｈｉは、内部が露出する円筒形をなしている。つまり、コネクタ部５は、同心で直径が異なる２つの円筒形からなる二段円筒形をなしている。コネクタ部５の深さ寸法の例を示す。例えば主面４ｆから底部５ｂまでの深さｌ４は７ｍｍであり、主面４ｆから端子固定部５ｃの端子固定部底面（主面開口部底面）５ｃｂまでの深さｌ１が１ｍｍ、筒状部５ｈｕの深さｌ２が２ｍｍ、導電部分であるリードパターン２３の貫通孔２１ｈの深さｔｌが１ｍｍ、筒状部５ｈｄの深さｌ３が３ｍｍである。筒状部５ｈｕから底部５ｂまでの延伸部５ｅの深さ（延伸部深さ）ｌｅは６ｍｍである。貫通孔２１ｈの深さｔｌはリードパターン２３のパターン板厚でもある。図４、図６では、リードパターン２３におけるコネクタ部５を示したが、リードパターン２４、２５におけるコネクタ部５も同じである。図４では、プレスフィット端子２が挿入されたコネクタ部５と挿入されていないコネクタ部５を示した。 As shown in FIGS. 4 and 6, the connector 5 is provided with a terminal fixing portion (main surface opening) 5c having a diameter d1 of 3 mm on the main surface 4f of the sealing body 4, and a diameter d2 of 2 mm from the middle. It is formed so as to pass through the through hole 21h via the cylindrical part 5hu, further form the cylindrical part 5hd, and reach the bottom part 5b. The terminal fixing portion 5c has a cylindrical shape with a diameter d1 of 3 mm, and the cylindrical portions 5hu and 5hd have a cylindrical shape with a diameter d2 of 2 mm. The inner diameter portion 21hi of the through hole 21h has a cylindrical shape in which the inside is exposed. That is, the connector portion 5 has a two-stage cylindrical shape composed of two cylindrical shapes that are concentric and have different diameters. The example of the depth dimension of the connector part 5 is shown. For example, the depth l4 from the main surface 4f to the bottom portion 5b is 7 mm, the depth l1 from the main surface 4f to the terminal fixing portion bottom surface (main surface opening bottom surface) 5cb of the terminal fixing portion 5c is 1 mm, and the cylindrical portion 5hu. Depth 12 is 2 mm, the depth tl of the through hole 21 h of the lead pattern 23 which is the conductive portion is 1 mm, and the depth 13 of the cylindrical portion 5 hd is 3 mm. The depth (extension part depth) le of the extension part 5e from the cylindrical part 5hu to the bottom part 5b is 6 mm. The depth tl of the through hole 21 h is also the pattern plate thickness of the lead pattern 23. 4 and 6 show the connector portion 5 in the lead pattern 23, the connector portion 5 in the lead patterns 24 and 25 is the same. In FIG. 4, the connector part 5 in which the press-fit terminal 2 is inserted and the connector part 5 in which the press-fit terminal 2 is not inserted are shown.
　次にコネクタ部５に挿入するプレスフィット端子２の形状について図４、図５を用いて説明する。プレスフィット端子２は、ストレート部（胴体部）２ｓ、コネクタ挿入端子２ａ、基板挿入端子２ｂから成り、コネクタ挿入端子２ａをコネクタ部５に挿入する。ストレート部２ｓは、プレスフィット端子２の短手方向の幅がＷｓで、プレスフィット端子２の長手方向に直線形状になっている。コネクタ挿入端子２ａには、幅がＷｆのプレスフィット部２ｐと、幅がＷａのアンカー部２ｎから構成される。プレスフィット端子２の厚みｔｓは、プレスフィット端子２をコネクタ部５に挿入する際にねじれや反りが生じない厚みであればよい。コネクタ挿入端子２ａ、アンカー部２ｎ、基板挿入端子２ｂは、それぞれ内側をくり抜いた枠形状に形成されている。 Next, the shape of the press-fit terminal 2 to be inserted into the connector part 5 will be described with reference to FIGS. The press-fit terminal 2 includes a straight portion (body portion) 2s, a connector insertion terminal 2a, and a board insertion terminal 2b. The connector insertion terminal 2a is inserted into the connector portion 5. The straight portion 2s has a width Ws in the short direction of the press-fit terminal 2 and is linear in the longitudinal direction of the press-fit terminal 2. The connector insertion terminal 2a includes a press-fit portion 2p having a width Wf and an anchor portion 2n having a width Wa. The thickness ts of the press-fit terminal 2 may be a thickness that does not cause twisting or warping when the press-fit terminal 2 is inserted into the connector portion 5. The connector insertion terminal 2a, the anchor portion 2n, and the board insertion terminal 2b are each formed in a frame shape that is hollowed out inside.
　図４に示すようにコネクタ挿入端子２ａをコネクタ部５に挿入した際に、幅Ｗｓのストレート部２ｓがコネクタ部５の端子固定部５ｃの端子固定部底面５ｃｂに接触し、コネクタ部５の深さ方向におけるプレスフィット端子２の挿入位置が固定される。端子固定部５ｃの直径ｄ１はストレート部２ｓの幅Ｗｓに合わせて設計するのが望ましい。 As shown in FIG. 4, when the connector insertion terminal 2 a is inserted into the connector portion 5, the straight portion 2 s having the width Ws comes into contact with the terminal fixing portion bottom surface 5 cb of the terminal fixing portion 5 c of the connector portion 5. The insertion position of the press-fit terminal 2 in the vertical direction is fixed. The diameter d1 of the terminal fixing portion 5c is desirably designed in accordance with the width Ws of the straight portion 2s.
　プレスフィット部２ｐの幅Ｗｆは、各リードパターンに形成された貫通孔２１ｈにおける内径部２１ｈｉの直径ｄ２よりも大きくなっている。このため、プレスフィット部２ｐをコネクタ部５に挿入した際に、導体である内径部２１ｈｉの直径ｄ２に応じてプレスフィット部２ｐが圧縮変形し、その反発により内径部２１ｈｉとの間に所定以上の圧力がかかることで貫通孔２１ｈの内径部２１ｈｉに接合され、固定される。 The width Wf of the press fit portion 2p is larger than the diameter d2 of the inner diameter portion 21hi in the through hole 21h formed in each lead pattern. For this reason, when the press-fit portion 2p is inserted into the connector portion 5, the press-fit portion 2p is compressively deformed according to the diameter d2 of the inner diameter portion 21hi that is a conductor, and the repulsion causes a predetermined amount or more between the inner diameter portion 21hi. Is applied to the inner diameter portion 21hi of the through hole 21h and fixed.
　アンカー部２ｎの幅Ｗａは、内径部２１ｈｉの直径ｄ２よりも小さくなっている。このため、アンカー部２ｎは、プレスフィット端子２の挿入時にコネクタ部５の底部５ｂと接触し、かつ塑性変形して筒状部５ｈｄに接触する。さらにプレスフィット端子２をさらに押し込むことでアンカー部２ｎが圧縮変形して、筒状部５ｈｄからの反発力によってアンカー部２ｎがコネクタ部５の筒状部５ｈｄに固定される。 The width Wa of the anchor part 2n is smaller than the diameter d2 of the inner diameter part 21hi. For this reason, the anchor portion 2n comes into contact with the bottom portion 5b of the connector portion 5 when the press-fit terminal 2 is inserted, and is plastically deformed to come into contact with the cylindrical portion 5hd. When the press-fit terminal 2 is further pushed in, the anchor portion 2n is compressed and deformed, and the anchor portion 2n is fixed to the tubular portion 5hd of the connector portion 5 by a repulsive force from the tubular portion 5hd.
　プレスフィット部２ｐが固定される前にアンカー部２ｎが圧縮変形する必要があるため、ストレート部２ｓのストレート部底面（胴体部底面）２ｓｂからアンカー部２ｎの下面までの長さであるコネクタ挿入端子長ｌａは、コネクタ部５の筒状部５ｈｕから底部５ｂまでの深さである延伸部５ｅの深さｌｅよりも長くする必要がある。 Since the anchor portion 2n needs to be compressed and deformed before the press-fit portion 2p is fixed, a connector insertion terminal having a length from the straight portion bottom surface (body portion bottom surface) 2sb of the straight portion 2s to the lower surface of the anchor portion 2n The length la needs to be longer than the depth le of the extending portion 5e, which is the depth from the tubular portion 5hu to the bottom portion 5b of the connector portion 5.
　なお、挿入前のプレスフィット端子２は、コネクタ挿入端子長ｌａが、コネクタ部５の延伸部深さｌｅよりも長いという関係が保たれていれば、アンカー部２ｎが接触する筒状部５ｈｄの深さは３ｍｍ以下でも以上でも良い。 Note that the press-fit terminal 2 before insertion has a cylindrical insertion portion 5hd with which the anchor portion 2n comes into contact if the relationship that the connector insertion terminal length la is longer than the extension portion depth le of the connector portion 5 is maintained. The depth may be 3 mm or less.
　また、リードパターン２３、２４、２５に形成された貫通孔２１ｈの内径部２１ｈｉにおける直径ｄ２は２ｍｍ以外でもよい。貫通孔２１ｈの内径部２１ｈｉにおける直径ｄ２及びその深さｔｌは、プレスフィット端子２をコネクタ部５に挿入した際に、導体である内径部２１ｈｉの直径ｄ２に応じてプレスフィット部２ｐが圧縮変形し、その反発により内径部２１ｈｉとの間に所定以上の圧力がかかるだけの直径及び深さであれば構わない。 Further, the diameter d2 of the inner diameter portion 21hi of the through hole 21h formed in the lead patterns 23, 24, and 25 may be other than 2 mm. The diameter d2 and the depth tl of the inner diameter portion 21hi of the through hole 21h are such that when the press fit terminal 2 is inserted into the connector portion 5, the press fit portion 2p is compressed and deformed according to the diameter d2 of the inner diameter portion 21hi that is a conductor. However, the diameter and the depth are sufficient so that a predetermined pressure or more is applied to the inner diameter portion 21hi due to the repulsion.
　つぎに、封止体４の主面４ｆに端子挿入用のメス型コネクタであるコネクタ部５を設けた電力用半導体装置１の製造方法について、図２、図７～図９を用いて説明する。なお、工程前には、リードフレーム２１自体は完成しているものとする。図７は、図１の電力用半導体装置の製造途中におけるモジュールを示す図である。図８及び図９は、図１の電力用半導体装置の製造工程を説明する図である。図８は回路面６ｆに半導体回路が形成されたモジュール１Ｍを封止するために、モジュール１Ｍを金型９０に設置した状態の断面図であり、図９は封止直後でリードフレーム２１のトリミングを行う前の電力用半導体装置１の断面図である。なお、図７～図９は、図１のＡ－Ａ線に対応した切断面を示している。 Next, a manufacturing method of the power semiconductor device 1 in which the connector portion 5 which is a female connector for inserting a terminal is provided on the main surface 4f of the sealing body 4 will be described with reference to FIGS. 2 and 7 to 9. FIG. . It is assumed that the lead frame 21 itself has been completed before the process. FIG. 7 is a diagram showing a module in the middle of manufacturing the power semiconductor device of FIG. 8 and 9 are diagrams illustrating a manufacturing process of the power semiconductor device of FIG. FIG. 8 is a cross-sectional view of a state in which the module 1M is installed in the mold 90 in order to seal the module 1M having the semiconductor circuit formed on the circuit surface 6f. FIG. 9 shows the trimming of the lead frame 21 immediately after sealing. It is sectional drawing of the semiconductor device 1 for electric power before performing. 7 to 9 show cut surfaces corresponding to the line AA in FIG.
　はじめに、図７に示すように、回路面６ｆとなるヒートスプレッダ６の表面の所定位置へのはんだ７による電力用半導体素子８（スイッチング素子１１、整流素子１２）の裏面電極（カソード電極、コレクタ電極）の接合を含め、図示しない回路部材の設置を行う。つぎに、リードフレーム２１のリードパターン２３の一端と電力用半導体素子８のそれぞれの表面の主電力の電極（アノード電極、エミッタ電極）とのはんだ７による接合、リードフレーム２１のリードパターン２５の一端と回路面６ｆの所定位置とのはんだ７による接合、および、スイッチング素子１１のゲート電極とリードフレーム２１のリードパターン２４との金のワイヤ９を用いた電気接続といったリードフレーム２１の各リードパターンと回路部材との電気接続を行う。これにより、配線接続が終了し、スイッチング素子１１と整流素子１２による半導体スイッチを構成する電力回路を備えたモジュール１Ｍが形成される。 First, as shown in FIG. 7, the back electrode (cathode electrode, collector electrode) of the power semiconductor element 8 (switching element 11, rectifier element 12) by the solder 7 to a predetermined position on the surface of the heat spreader 6 to be the circuit surface 6f. Circuit members (not shown) are installed, including the joining. Next, joining of one end of the lead pattern 23 of the lead frame 21 and the main power electrode (anode electrode, emitter electrode) on each surface of the power semiconductor element 8 by the solder 7, one end of the lead pattern 25 of the lead frame 21 Each lead pattern of the lead frame 21 such as joining of the circuit surface 6f to a predetermined position with the solder 7 and electrical connection using the gold wire 9 between the gate electrode of the switching element 11 and the lead pattern 24 of the lead frame 21; Make electrical connections with circuit members. Thereby, the wiring connection is completed, and a module 1M including a power circuit that forms a semiconductor switch including the switching element 11 and the rectifying element 12 is formed.
　こうして電力回路を備えたモジュール１Ｍを図８に示すように、トランスファモールド用の金型９０（上金型９１、下金型９２）内に、銅箔１５、絶縁層１４を下にして設置する。このとき、上金型９１の面内には、貫通孔２１ｈの位置に対応する所定位置にスリーブ９１ｓ及びピン９１ｐが配置されており、各ピン９１ｐがそれぞれ対応する貫通孔２１ｈ内に挿入されるように位置合わせ（面の延在（水平）方向）を行う。そして、リードフレーム２１の一部を上金型９１と下金型９２とで挟みこみ、リード枠２２が金型９０の外に出るようにして金型９０を締める。これにより、水平方向が位置決めされたモジュール１Ｍは垂直方向でも位置決めされることになり、各貫通孔２１ｈの水平方向での相対位置、および主面４ｆに対する深さを精度よく定めることができる。 As shown in FIG. 8, the module 1M including the power circuit is placed in a transfer mold 90 (upper mold 91, lower mold 92) with the copper foil 15 and the insulating layer 14 facing down. . At this time, the sleeve 91s and the pin 91p are disposed in a predetermined position corresponding to the position of the through hole 21h in the surface of the upper mold 91, and each pin 91p is inserted into the corresponding through hole 21h. Position alignment (surface extension (horizontal) direction) is performed as described above. Then, a part of the lead frame 21 is sandwiched between the upper mold 91 and the lower mold 92, and the mold 90 is tightened so that the lead frame 22 comes out of the mold 90. Accordingly, the module 1M in which the horizontal direction is positioned is also positioned in the vertical direction, and the relative position in the horizontal direction of each through hole 21h and the depth with respect to the main surface 4f can be accurately determined.
　このようにして、金型９０の内部でモジュール１Ｍを３次元的に位置決めされた金型９０内の空間に封止樹脂を注入し、トランスファモールドによって封止すると、図９のように、回路面６ｆの回路部材を封止するとともに回路面６ｆに略平行な主面４ｆを有する封止体４を形成することができる。金型９０内に封止樹脂を注入する際に、貫通孔２１ｈには、少なくとも貫通孔２１ｈの内径部２１ｈｉに対して密着するように径を調整したピン９１ｐが挿入されている。このため、封止体４においてピン９１ｐが挿入された部分は、主面４ｆから各リードパターンの貫通孔２１ｈと連通したコネクタ部５の延伸部５ｅとして形成される。また封止体４においてスリーブ９１ｓが挿入された部分は、コネクタ部５の端子固定部５ｃとして形成される。このように、延伸部５ｅと端子固定部５ｃを備えた、すなわち二段円筒形状のコネクタ部５が形成される。これにより、各コネクタ部５では、導電部である貫通孔２１ｈの中心と、端子固定部５ｃ、筒状部５ｈｕ、５ｈｄの中心とがずれることなく同心に形成されるので、プレスフィット端子２のような外部端子をスムーズに挿入することが可能となる。 In this way, when the sealing resin is injected into the space inside the mold 90 in which the module 1M is three-dimensionally positioned inside the mold 90 and sealed by transfer molding, the circuit surface is as shown in FIG. The sealing member 4 having the main surface 4f substantially parallel to the circuit surface 6f can be formed while sealing the circuit member 6f. When the sealing resin is injected into the mold 90, a pin 91p having a diameter adjusted so as to be in close contact with at least the inner diameter portion 21hi of the through hole 21h is inserted into the through hole 21h. For this reason, the portion where the pin 91p is inserted in the sealing body 4 is formed as the extending portion 5e of the connector portion 5 communicating with the through hole 21h of each lead pattern from the main surface 4f. Further, the portion of the sealing body 4 where the sleeve 91 s is inserted is formed as the terminal fixing portion 5 c of the connector portion 5. In this way, the connector portion 5 having the extending portion 5e and the terminal fixing portion 5c, that is, a two-stage cylindrical shape is formed. Thereby, in each connector part 5, since the center of through-hole 21h which is an electroconductive part and the center of terminal fixing | fixed part 5c, cylindrical part 5hu, 5hd are formed concentrically, the press-fit terminal 2 of Such external terminals can be smoothly inserted.
　次に、トリミング工程として、封止体４からはみ出たリードフレーム２１のリード枠２２が除去される。封止体４の側面では、図２に示すように連結部２６の切断部が露出するが、基本的に回路部分は封止体４によってパッケージングされた電力用半導体装置１が製造される。 Next, as a trimming step, the lead frame 22 of the lead frame 21 protruding from the sealing body 4 is removed. On the side surface of the sealing body 4, the cut portion of the connecting portion 26 is exposed as shown in FIG. 2, but basically, the power semiconductor device 1 in which the circuit portion is packaged by the sealing body 4 is manufactured.
　コネクタ部５へのプレスフィット端子２の挿入では、アンカー部２ｎが先にコネクタ部５の底部５ｂに接して圧縮変形する。その後アンカー部２ｎの変形によりアンカー部２ｎと筒状部５ｈｄの内壁間に圧縮応力が生じて、プレスフィット端子２のアンカー部２ｎがコネクタ部５に固定される。これに合わせてプレスフィット部２ｐがリードフレームの内径部２１ｈｉに固定されて電気的に接続される。 When the press-fit terminal 2 is inserted into the connector part 5, the anchor part 2n comes into contact with the bottom part 5b of the connector part 5 and compresses and deforms first. Thereafter, a deformation of the anchor portion 2n causes a compressive stress between the inner wall of the anchor portion 2n and the cylindrical portion 5hd, and the anchor portion 2n of the press-fit terminal 2 is fixed to the connector portion 5. In accordance with this, the press-fit portion 2p is fixed and electrically connected to the inner diameter portion 21hi of the lead frame.
　このように、実施の形態１の電力用半導体装置１は、主面４ｆにプレスフィット端子２を挿入可能な複数のコネクタ部５を配置したことにより、電力用半導体装置１の上面（主面４ｆ）からプレスフィット端子２のような外部端子を取り付けることが可能となり、電力用半導体装置１を小型化することができ、外部基板への実装面積を縮小できる。したがって、電力用半導体装置１を装着した機器を小型化することができる。 As described above, the power semiconductor device 1 according to the first embodiment has the upper surface (main surface 4f) of the power semiconductor device 1 by arranging the plurality of connector portions 5 into which the press-fit terminals 2 can be inserted on the main surface 4f. ), It is possible to attach an external terminal such as the press-fit terminal 2, the power semiconductor device 1 can be miniaturized, and the mounting area on the external substrate can be reduced. Therefore, it is possible to reduce the size of the device on which the power semiconductor device 1 is mounted.
　さらに、実施の形態１の電力用半導体装置１は、コネクタ部５への接続にプレスフィット端子２の圧縮変形による接合を用いることで、従来のはんだ付けで接続されていた端子構造よりも低温でコネクタ部５に端子を取り付けることができる。これにより電力用半導体素子８の接合部であるはんだ７を再加熱して再溶融、もしくは軟化させることなくモジュールを組み立てることが可能となり、はんだ接合部の信頼性を向上させることができる。 Furthermore, the power semiconductor device 1 according to the first embodiment uses a joint by compression deformation of the press-fit terminal 2 for connection to the connector portion 5, so that the temperature is lower than that of a conventional terminal structure connected by soldering. Terminals can be attached to the connector portion 5. As a result, it becomes possible to assemble the module without reheating and remelting or softening the solder 7 which is the joint portion of the power semiconductor element 8, and the reliability of the solder joint portion can be improved.
　実施の形態１の電力用半導体装置１の製造の際に、コネクタ部５は、上金型９１に設けたピン９１ｐ及びスリーブ９１ｓにより形成することで、各コネクタ部５の主面４ｆ内における位置を設定通りに配置できる。しかも、金型９０のピン９１ｐは、リードフレーム２１内に設けた貫通孔２１ｈに挿入するようにして形成されているので、各コネクタ部５では、導電部として機能する貫通孔２１ｈの中心と樹脂の筒状部５ｈｕ、５ｈｄ及び端子固定部５ｃの中心を一致させ、コネクタ部５内での軸のゆがみをなくすことができる。そのため、コネクタ部５に挿入した外部端子（本例ではプレスフィット端子２）の位置や角度のばらつきが低減され、外部機器とスムーズに連結することができる。あるいは、外部機器に設けられた複数の端子を各コネクタ部５にスムーズに挿入することができる。これにより、機器への実装時や実装後、および端子の接続時や接続後において、例えば、コネクタ部５の片側の壁面に過大な反発力を生じるなどの余分な力がかかることがない。そのため、電気接続部や回路部材等への応力を低減して劣化を防止でき、電力用半導体装置１の信頼性を向上させることができる。 When the power semiconductor device 1 according to the first embodiment is manufactured, the connector portion 5 is formed by the pins 91p and the sleeve 91s provided in the upper mold 91, whereby the position of each connector portion 5 in the main surface 4f. Can be arranged as set. Moreover, since the pins 91p of the mold 90 are formed so as to be inserted into the through holes 21h provided in the lead frame 21, in each connector part 5, the center of the through hole 21h functioning as a conductive part and the resin The cylindrical portions 5hu and 5hd and the center of the terminal fixing portion 5c can be made to coincide with each other, and the distortion of the shaft in the connector portion 5 can be eliminated. Therefore, variations in the position and angle of the external terminals (in this example, press-fit terminals 2) inserted into the connector portion 5 are reduced, and the external terminals can be smoothly connected. Alternatively, a plurality of terminals provided in the external device can be smoothly inserted into each connector portion 5. Thereby, an extra force such as an excessive repulsive force is not applied to the wall surface on one side of the connector portion 5 at the time of mounting on the device or after mounting, and at the time of connecting or connecting the terminals. Therefore, it is possible to reduce the stress on the electrical connection portion and the circuit member and prevent the deterioration, and to improve the reliability of the power semiconductor device 1.
　実施の形態１の電力用半導体装置１は、プレスフィット端子２を用いることで、外部基板への実装用のはんだ付け設備が不要となり、簡易的な手動プレスで実装が可能であるため、設備コストを大幅に低減できる。また、実施の形態１の電力用半導体装置１は、さらに大きなプリント基板でもプレスフィット端子（基板挿入端子２ｂ）を用いることで容易に実装が可能で、かつはんだ付けのようなノウハウなども必要ないため、作業性が大幅に向上する。特に電力用半導体装置では、大電流を通電するため一般の半導体装置よりも端子の断面積が大きく、はんだ付けの際に端子の温度が上がりにくく安定させることが難しい。しかし、実施の形態１の電力用半導体装置１は、プレスフィット端子２を用いているので、プレスフィット端子２の断面積が変わっても容易にプレスすることで実装可能であり、このため歩留まりが向上する。 Since the power semiconductor device 1 of the first embodiment uses the press-fit terminal 2, no soldering equipment for mounting on an external substrate is required, and mounting is possible with a simple manual press. Can be greatly reduced. In addition, the power semiconductor device 1 of the first embodiment can be easily mounted using a press-fit terminal (substrate insertion terminal 2b) even on a larger printed circuit board, and does not require know-how such as soldering. Therefore, workability is greatly improved. In particular, in a power semiconductor device, since a large current is applied, the cross-sectional area of the terminal is larger than that of a general semiconductor device, and it is difficult to stabilize the temperature of the terminal during soldering. However, since the power semiconductor device 1 according to the first embodiment uses the press-fit terminal 2, it can be mounted by being easily pressed even if the cross-sectional area of the press-fit terminal 2 changes. improves.
　なお、外部基板に接続するプレスフィット端子２の基板挿入端子２ｂは、はんだ付け用の端子でも良いし、スプリング端子などでも良い。つまり、ユーザーからのニーズにより基板挿入端子は様々な形態に変形してよい。 The board insertion terminal 2b of the press-fit terminal 2 connected to the external board may be a soldering terminal or a spring terminal. That is, the board insertion terminal may be modified into various forms according to the needs of the user.
　実施の形態１の電力用半導体装置１は、コネクタ部５の端子固定部５ｃにおける端子固定部底面５ｃｂにプレスフィット端子２のストレート部２ｓにおけるストレート部底面２ｓｂが接触することで、コネクタ部５の深さ方向に対するプレスフィット端子２の位置が決まる。これにより電力用半導体装置１におけるプレスフィット端子２全体の突出長を合わせることができるため、実施の形態１の電力用半導体装置１は、外部基板実装時に接続位置が揃うため接合品質が安定する。さらに、実施の形態１の電力用半導体装置１は、端子固定部５ｃの直径ｄ１をプレスフィット端子２のストレート部２ｓに合わせることで、プレスフィット端子２の挿入後にプレスフィット端子２が左右（挿入方向に垂直）に振れても、端子固定部５ｃの側面が振動のストッパーとなってプレスフィット部２ｐへの負荷を減らすことができる。 In the power semiconductor device 1 according to the first embodiment, the straight portion bottom surface 2 sb of the straight portion 2 s of the press-fit terminal 2 contacts the terminal fixed portion bottom surface 5 cb of the terminal fixing portion 5 c of the connector portion 5. The position of the press-fit terminal 2 with respect to the depth direction is determined. Thereby, since the projection length of the entire press-fit terminal 2 in the power semiconductor device 1 can be adjusted, the connection position of the power semiconductor device 1 of the first embodiment is stabilized when the external substrate is mounted, so that the bonding quality is stabilized. Furthermore, in the power semiconductor device 1 of the first embodiment, the press-fit terminal 2 is inserted into the left and right (inserted) after the press-fit terminal 2 is inserted by matching the diameter d1 of the terminal fixing portion 5c with the straight portion 2s of the press-fit terminal 2. Even if it is swung in a direction perpendicular to the direction, the side surface of the terminal fixing portion 5c becomes a vibration stopper, and the load on the press fit portion 2p can be reduced.
　また、実施の形態１の電力用半導体装置１は、コネクタ部５と接続するプレスフィット端子２にアンカー部２ｎを持たせることで、プレスフィット部２ｐとアンカー部２ｎの２箇所で固定されてことになる。これにより電力用半導体装置１が外部から振動を受けた場合などに、プレスフィット部２ｐに加えてアンカー部２ｎがプレスフィット端子２を保持するため、実施の形態１の電力用半導体装置１は、振動や衝撃に対して機械的、電気的に高い信頼性が得られる。 In addition, the power semiconductor device 1 according to the first embodiment is fixed at two locations of the press-fit portion 2p and the anchor portion 2n by providing the press-fit terminal 2 connected to the connector portion 5 with the anchor portion 2n. become. Thereby, when the power semiconductor device 1 receives vibration from the outside, the anchor portion 2n holds the press-fit terminal 2 in addition to the press-fit portion 2p. High mechanical and electrical reliability against vibration and shock can be obtained.
　銅箔１５の露出面にフィンを取り付ける場合では、フィンを電力用半導体装置１に押し付けて取り付ける。実施の形態１の電力用半導体装置１は、アンカー部２ｎがコネクタ部５の底部５ｂに固定されているため、フィン取り付けの際にモジュール１Ｍを介してプレスフィット部２ｐに深さ方向（コネクタ部５の延伸方向）の応力を受けても、アンカー部２ｎがコネクタ部５を支えているのでプレスフィット部２ｐがずれることもなく、外部フィン取り付け時の品質が安定する。 When attaching a fin to the exposed surface of the copper foil 15, the fin is pressed against the power semiconductor device 1 for attachment. In the power semiconductor device 1 according to the first embodiment, since the anchor portion 2n is fixed to the bottom portion 5b of the connector portion 5, the depth direction (connector portion) is applied to the press-fit portion 2p via the module 1M when the fin is attached. 5), the anchor portion 2n supports the connector portion 5, so that the press fit portion 2p is not displaced, and the quality when the external fin is attached is stabilized.
　なお、必ずしも各リードパターンと主面４ｆとの間に樹脂の層がある必要はなく、端子固定部５ｃの下面に各リードパターンの面が露出するようにして、コネクタ部５の筒状部５ｈｕの直径が端子固定部５ｃの直径と同一にしてもよい。この場合のコネクタ部５も、二段円筒形状である。プレスフィット端子２のストレート部２ｓにおけるストレート部底面２ｓｂが各リードパターンに接触することで、電力用半導体装置１におけるプレスフィット端子２全体の突出長を合わせることができる。 It is not always necessary to have a resin layer between each lead pattern and the main surface 4f, and the surface of each lead pattern is exposed on the lower surface of the terminal fixing portion 5c so that the cylindrical portion 5hu of the connector portion 5 is exposed. May be the same as the diameter of the terminal fixing portion 5c. The connector part 5 in this case also has a two-stage cylindrical shape. Since the straight portion bottom surface 2sb of the straight portion 2s of the press-fit terminal 2 is in contact with each lead pattern, the protruding length of the entire press-fit terminal 2 in the power semiconductor device 1 can be matched.
　また、コネクタ部５の端子固定部５ｃの直径が筒状部５ｈｕ及び各リードパターンの貫通孔２１ｈの直径と同一にしてもよい。すなわち、端子固定部５ｃは、主面４ｆからプレスフィット端子２のストレート部２ｓのストレート部底面２ｓｂが位置する部分までの部分となる。この場合のコネクタ部５は、二段円筒形状ではなく、通常の円筒形状となる。この場合、プレスフィット端子２の挿入長さを規定する端子固定部底面５ｃｂがないので、プレスフィット端子２をプレスする装置でプレスフィット端子２の挿入長さを調整する。プレスフィット端子２の挿入長さを調整は、プレスフィット端子２からの反力の増加状態や、主面４ｆとストレート部２ｓ上面又は基板挿入端子２ｂの端部との距離に基づいて行う。 Further, the diameter of the terminal fixing part 5c of the connector part 5 may be the same as the diameter of the cylindrical part 5hu and the through hole 21h of each lead pattern. That is, the terminal fixing portion 5c is a portion from the main surface 4f to a portion where the straight portion bottom surface 2sb of the straight portion 2s of the press-fit terminal 2 is located. The connector part 5 in this case is not a two-stage cylindrical shape but a normal cylindrical shape. In this case, since there is no terminal fixing portion bottom surface 5cb that defines the insertion length of the press-fit terminal 2, the insertion length of the press-fit terminal 2 is adjusted by an apparatus that presses the press-fit terminal 2. The insertion length of the press-fit terminal 2 is adjusted based on the increased reaction force from the press-fit terminal 2 and the distance between the main surface 4f and the upper surface of the straight portion 2s or the end of the board insertion terminal 2b.
　また、金型９０の上金型９１に設けるピン９１ｐの先端に、図１０に示すようにテーパを施したピンテーパ部９１ｔを設けてもよい。図１０は実施の形態１による他のコネクタ部及び金型のピンを示す図であり、図１１は図１０のコネクタ部及びプレスフィット端子を示す図である。図１０（ａ）は金型９０に樹脂が注入された状態のコネクタ部５を示しており、図１０（ｂ）は、金型９０から取り出した後のコネクタ部５を示している。すなわち、図１０（ａ）の状態から図１０（ｂ）の状態になる。図８に示したピン９１ｐ（第一のピン）は先端部が円筒形であるが、図１０（ａ）に示したピン９１ｐ（第二のピン）は、その先端部がピン底面部９１ｂとピンテーパ部９１ｔからなる円錐台になっている。 Alternatively, a pin taper portion 91t tapered as shown in FIG. 10 may be provided at the tip of the pin 91p provided on the upper die 91 of the die 90. FIG. 10 is a view showing another connector portion and mold pins according to Embodiment 1, and FIG. 11 is a view showing the connector portion and press-fit terminals of FIG. FIG. 10A shows the connector part 5 in a state where resin is injected into the mold 90, and FIG. 10B shows the connector part 5 after being taken out from the mold 90. That is, the state shown in FIG. 10A is changed to the state shown in FIG. The tip of the pin 91p (first pin) shown in FIG. 8 has a cylindrical shape, but the tip of the pin 91p (second pin) shown in FIG. It is a truncated cone composed of a pin taper portion 91t.
　ピンテーパ部９１ｔを設けたピン９１ｐを備えた上金型９１を用いることで、図１０（ｂ）に示すようにピン９１ｐの先端形状がコネクタ部５における底部５ｂの底形状に転写される。すなわち、コネクタ部５における底部５ｂの底形状は、平らな底面と底面テーパ部５ｂｔからなる円錐台になる。このようにすると、底面テーパ部５ｂｔが先端部に設けられたコネクタ部５を備えた電力用半導体装置１は、プレスフィット端子２のアンカー部２ｎが圧縮変形した際に、図１１のように封止体４を形成するための封止樹脂と接触しやすくなり、アンカー部２ｎとコネクタ部５との接触面積が増えるので、プレスフィット端子２の保持力を高めることができる。 By using the upper die 91 provided with the pin 91p provided with the pin taper portion 91t, the tip shape of the pin 91p is transferred to the bottom shape of the bottom portion 5b in the connector portion 5 as shown in FIG. That is, the bottom shape of the bottom portion 5b in the connector portion 5 is a truncated cone having a flat bottom surface and a bottom surface taper portion 5bt. In this manner, the power semiconductor device 1 including the connector portion 5 having the bottom taper portion 5bt provided at the tip portion is sealed as shown in FIG. 11 when the anchor portion 2n of the press-fit terminal 2 is compressed and deformed. Since it becomes easy to contact the sealing resin for forming the stationary body 4 and the contact area between the anchor portion 2n and the connector portion 5 increases, the holding force of the press-fit terminal 2 can be increased.
　また、金型９０の上金型９１に設けるピン９１ｐの先端に、図１２に示すように丸みを持たせた円形部９１ｃを設けてもよい。図１２は実施の形態１による更に他のコネクタ部及び金型のピンを示す図であり、図１３は図１２のコネクタ部及びプレスフィット端子を示す図である。図１２（ａ）は金型９０に樹脂が注入された状態のコネクタ部５を示しており、図１２（ｂ）は、金型９０から取り出した後のコネクタ部５を示している。すなわち、図１２（ａ）の状態から図１２（ｂ）の状態になる。図１２（ａ）に示したピン９１ｐ（第三のピン）は、その先端部が円形部９１ｃからなる半球状になっている。 Alternatively, a round portion 91c having a round shape as shown in FIG. 12 may be provided at the tip of the pin 91p provided on the upper die 91 of the die 90. FIG. 12 is a view showing still another connector portion and mold pins according to Embodiment 1, and FIG. 13 is a view showing the connector portion and press-fit terminals of FIG. FIG. 12A shows the connector portion 5 in a state where resin is injected into the mold 90, and FIG. 12B shows the connector portion 5 after being taken out from the mold 90. That is, the state shown in FIG. 12A is changed to the state shown in FIG. The pin 91p (third pin) shown in FIG. 12 (a) has a hemispherical shape having a circular portion 91c at its tip.
　円形部９１ｃを設けたピン９１ｐを備えた上金型９１を用いることで、図１２（ｂ）に示すようにピン９１ｐの先端形状がコネクタ部５における底部５ｂの底形状に転写される。すなわち、コネクタ部５における底部５ｂの底形状は、円形部９１ｃからなる半球状になる。このようにすると、円形部９１ｃが先端部に設けられたコネクタ部５を備えた電力用半導体装置１は、プレスフィット端子２をコネクタ部５に挿入した際に、図１３のようにアンカー部２ｎの変形に対して、第一のピンや第二のピンよりも多くの接触面積を得ることができ、プレスフィット端子２の保持力をさらに高めることができる。 By using the upper die 91 provided with the pin 91p provided with the circular portion 91c, the tip shape of the pin 91p is transferred to the bottom shape of the bottom portion 5b in the connector portion 5 as shown in FIG. That is, the bottom shape of the bottom portion 5b in the connector portion 5 is a hemispherical shape composed of the circular portion 91c. In this way, the power semiconductor device 1 including the connector portion 5 with the circular portion 91c provided at the tip portion has the anchor portion 2n as shown in FIG. 13 when the press-fit terminal 2 is inserted into the connector portion 5. For this deformation, a larger contact area than that of the first pin or the second pin can be obtained, and the holding force of the press-fit terminal 2 can be further increased.
　以上のように実施の形態１の電力用半導体装置１は、回路基板３の回路面６ｆに接合された電力用半導体素子８と、それぞれ一端側が電力用半導体素子８を含む回路面６ｆ側に設置された回路部材のいずれかと接続されるとともに、他端側の所定位置に貫通孔を有する複数のリードパターン２３、２４、２５と、回路部材と回路面６ｆを封止して回路面６ｆと略平行な主面４ｆを有するように形成された封止体４と、複数のリードパターン２３、２４、２５のそれぞれの貫通孔２１ｈに対応し、封止体４の主面４ｆから回路面６ｆに向かって形成されたメス型コネクタ（コネクタ部５）と、メス型コネクタ（コネクタ部５）に固定されたコネクタ挿入端子２ａを有するプレスフィット端子２と、を備えることを特徴とする。コネクタ挿入端子２ａは、メス型コネクタ（コネクタ部５）への挿入先端側に設けられるとともに、メス型コネクタ（コネクタ部５）の底（底部５ｂ）及び側面（筒状部５ｈｄ）に固定されたアンカー部２ｎと、アンカー部２ｎよりも挿入深さが浅い部分に設けられるとともに、リードパターン２３、２４、２５の貫通孔２１ｈに接続されたプレスフィット部２ｐと、を有することを特徴とする。実施の形態１の電力用半導体装置１は、この特徴により、プレスフィット端子２がメス型コネクタ（コネクタ部５）の底（底部５ｂ）及び側面（筒状部５ｈｄ）に固定されたアンカー部２ｎとリードパターン２３、２４、２５の貫通孔２１ｈに接続されたプレスフィット部２ｐを有するので、プレスフィット端子２とコネクタ（コネクタ部５）との保持力を高くでき、小型で信頼性を高くすることができる。 As described above, the power semiconductor device 1 of the first embodiment is installed on the power semiconductor element 8 bonded to the circuit surface 6f of the circuit board 3 and on the circuit surface 6f side including the power semiconductor element 8 on one end side. A plurality of lead patterns 23, 24, 25 having a through hole at a predetermined position on the other end side, and the circuit member and the circuit surface 6f are sealed to be connected to any of the circuit members, and the circuit surface 6f. Corresponding to the sealing body 4 formed to have the parallel main surface 4f and the through holes 21h of the plurality of lead patterns 23, 24, 25, from the main surface 4f of the sealing body 4 to the circuit surface 6f. A female connector (connector portion 5) formed toward the head and a press-fit terminal 2 having a connector insertion terminal 2a fixed to the female connector (connector portion 5). The connector insertion terminal 2a is provided on the distal end side of insertion into the female connector (connector portion 5), and is fixed to the bottom (bottom portion 5b) and side surface (tubular portion 5hd) of the female connector (connector portion 5). An anchor portion 2n and a press-fit portion 2p connected to the through holes 21h of the lead patterns 23, 24, and 25 are provided at a portion where the insertion depth is shallower than the anchor portion 2n. Due to this feature, the power semiconductor device 1 of the first embodiment has the anchor portion 2n in which the press-fit terminal 2 is fixed to the bottom (bottom portion 5b) and the side surface (tubular portion 5hd) of the female connector (connector portion 5). And the press-fit portion 2p connected to the through-hole 21h of the lead patterns 23, 24, and 25, the holding force between the press-fit terminal 2 and the connector (connector portion 5) can be increased, and the size and reliability are increased. be able to.
実施の形態２．
　図１４～図１８を参照して、本発明の実施の形態２における電力用半導体装置１について説明する。図１４は本発明の実施の形態２によるプレスフィット端子を示す図であり、図１５のプレスフィット端子及びコネクタ部を示す図である。図１６は図１４のプレスフィット端子の反力を説明する図である。実施の形態２における電力用半導体装置１は、実施の形態１と比較してコネクタ部５の端子固定部５ｃの形状とプレスフィット端子２のアンカー部２ｎの形状のみが異なる。このため以下ではこの相違点のみについて説明する。 Embodiment 2. FIG.
A power semiconductor device 1 according to the second embodiment of the present invention will be described with reference to FIGS. FIG. 14 is a diagram showing a press-fit terminal according to Embodiment 2 of the present invention, and is a diagram showing the press-fit terminal and connector portion of FIG. FIG. 16 is a diagram for explaining the reaction force of the press-fit terminal of FIG. The power semiconductor device 1 in the second embodiment is different from the first embodiment only in the shape of the terminal fixing portion 5c of the connector portion 5 and the shape of the anchor portion 2n of the press-fit terminal 2. Therefore, only this difference will be described below.
　図１４のプレスフィット端子２のアンカー部２ｎは、外周と貫通孔（アンカー部貫通孔）２ｎｈとの幅が異なる銅枠等の金属枠から成り、貫通孔２ｎｈの内側に向かって、三箇所の突起部２ｔを有する。突起部２ｔはアンカー部２ｎの上側に二箇所、下側に一箇所ある。プレスフィット端子２をコネクタ部５に挿入するとアンカー部２ｎは図１５に示すように圧縮変形する。変形した際に、突起部２ｔの先端はそれぞれが互いに接触し、圧縮変形する。このとき、図１６に示すように底部５ｂから受ける反力３１はコネクタ部５の深さ方向に生じていたが、突起部２ｔ同士の圧縮変形によって上側の突起部２ｔが反力３１を水平方向に分散して、反力３２、３３の向きにコネクタ部５の筒状部５ｈｄに伝える。これにより、実施の形態２の電力用半導体装置１は、コネクタ部５の深さ方向への応力を効率的に水平方向に変換して、プレスフィット端子２のアンカー部２ｎと筒状部５ｈｄとの固定を行うことが可能となり、実施の形態１の構成よりもアンカー部２ｎと筒状部５ｈｄとがより強固に固定される。 The anchor part 2n of the press-fit terminal 2 in FIG. 14 is made of a metal frame such as a copper frame having a width different from that of the outer periphery and the through hole (anchor part through hole) 2nh, and has three locations toward the inside of the through hole 2nh. It has a protrusion 2t. There are two protrusions 2t on the upper side of the anchor 2n and one on the lower side. When the press-fit terminal 2 is inserted into the connector part 5, the anchor part 2n is compressed and deformed as shown in FIG. When deformed, the tips of the protrusions 2t come into contact with each other and are compressed and deformed. At this time, as shown in FIG. 16, the reaction force 31 received from the bottom portion 5 b is generated in the depth direction of the connector portion 5, but the upper protrusion portion 2 t applies the reaction force 31 in the horizontal direction due to compression deformation of the protrusion portions 2 t. And is transmitted to the cylindrical part 5 hd of the connector part 5 in the direction of the reaction forces 32 and 33. Thereby, the power semiconductor device 1 of the second embodiment efficiently converts the stress in the depth direction of the connector portion 5 into the horizontal direction, and the anchor portion 2n of the press-fit terminal 2 and the cylindrical portion 5hd The anchor portion 2n and the cylindrical portion 5hd are more firmly fixed than the configuration of the first embodiment.
　実施の形態２の電力用半導体装置１は、プレスフィット端子２のアンカー部２ｎが、内側をくり抜いた枠形状に形成されるとともに、くり抜かれたアンカー部貫通孔（貫通孔２ｎｈ）に、内側に向かって少なくとも三箇所の突起部２ｔを有し、突起部２ｔのうち一個である第一突起部は挿入先端側に位置し、かつ第一突起部はアンカー部２ｎにおける幅方向の中央側に位置し、第一突起部と異なる二個の突起部２ｔはプレスフィット部２ｐ側に位置し、かつ突起部２ｔのそれぞれは第一突起部よりもアンカー部２ｎにおける幅方向の周辺側に位置するので、実施の形態１の構成よりもプレスフィット端子２とコネクタ部５との保持力を高くでき、小型で信頼性を高くすることができる。 In the power semiconductor device 1 according to the second embodiment, the anchor part 2n of the press-fit terminal 2 is formed in a frame shape hollowed out inside, and the anchor part through hole (through hole 2nh) hollowed out inside There are at least three projecting portions 2t toward the end, the first projecting portion which is one of the projecting portions 2t is located on the insertion tip side, and the first projecting portion is located on the center side in the width direction of the anchor portion 2n. The two projections 2t different from the first projection are located on the press fit portion 2p side, and each of the projections 2t is located on the peripheral side in the width direction of the anchor portion 2n than the first projection. The holding force between the press-fit terminal 2 and the connector portion 5 can be made higher than in the configuration of the first embodiment, and the size can be reduced and the reliability can be increased.
　また、図１５に示すように端子固定部５ｃの表面側（封止体４の主面４ｆ側）に開口面積が大きくなるようにテーパを施した表面テーパ部５ｓｔを設けている。表面テーパ部５ｓｔを設けることで、コネクタ部５に向かってプレスフィット端子２が斜め方向に挿入された場合でも、ストレート部２ｓの側面が表面テーパ部５ｓｔに沿って挿入され、すなわち表面テーパ部５ｓｔがガイドの役目を果たすので、実施の形態２のコネクタ部５は挿入方向を矯正する効果を持つ。これにより実施の形態２の電力用半導体装置１は、最終的にコネクタ部５に平行にプレスフィット端子２が挿入され、プレスフィット接合品質が安定する。また、実施の形態２の電力用半導体装置１は、封止体４における基板挿入端子２ｂの位置ばらつきが低減されて、外部基板実装時に良好な接合品質が得られる。 Further, as shown in FIG. 15, a surface taper portion 5st that is tapered so as to increase the opening area is provided on the surface side (the main surface 4f side of the sealing body 4) of the terminal fixing portion 5c. By providing the surface taper portion 5st, even when the press-fit terminal 2 is inserted obliquely toward the connector portion 5, the side surface of the straight portion 2s is inserted along the surface taper portion 5st, that is, the surface taper portion 5st. Since this serves as a guide, the connector portion 5 of the second embodiment has an effect of correcting the insertion direction. As a result, in the power semiconductor device 1 according to the second embodiment, the press-fit terminal 2 is finally inserted in parallel with the connector portion 5, and the press-fit joining quality is stabilized. Further, in the power semiconductor device 1 according to the second embodiment, the positional variation of the substrate insertion terminal 2b in the sealing body 4 is reduced, and good bonding quality can be obtained when the external substrate is mounted.
　なお、突起部２ｔは図１７に示すように、二箇所あればコネクタ部５の底部５ｂに接触した際の深さ方向への応力を水平方向に変換して筒状部５ｈｄ側にアンカー部２ｎを押し付けることが可能となるため、少なくとも二箇所の突起部２ｔがあればよい。 As shown in FIG. 17, if there are two protrusions 2t, the stress in the depth direction when contacting the bottom 5b of the connector part 5 is converted to the horizontal direction to convert the anchor part 2n to the cylindrical part 5hd side. Can be pressed, it is sufficient that there are at least two protrusions 2t.
　図１７は本発明の実施の形態２による他のプレスフィット端子を示す図であり、図１８は図１７のプレスフィット端子及びコネクタ部を示す図である。図１７のようにプレスフィット端子２のアンカー部２ｎに設けられた突起部２ｔが２つの場合は、アンカー部２ｎと筒状部５ｈｄとの固定力は突起部２ｔが３つ場合よりも多少低下するが、実施の形態１の構成よりもアンカー部２ｎと筒状部５ｈｄとがより強固に固定される。したがって、図１７のプレスフィット端子２が装着された電力用半導体装置１は、図１４のプレスフィット端子２が装着された電力用半導体装置１と同様の効果を奏する。 FIG. 17 is a view showing another press-fit terminal according to the second embodiment of the present invention, and FIG. 18 is a view showing the press-fit terminal and the connector portion of FIG. As shown in FIG. 17, when there are two protrusions 2t provided on the anchor part 2n of the press-fit terminal 2, the fixing force between the anchor part 2n and the cylindrical part 5hd is slightly lower than when there are three protrusions 2t. However, the anchor portion 2n and the cylindrical portion 5hd are fixed more firmly than the configuration of the first embodiment. Therefore, the power semiconductor device 1 to which the press fit terminal 2 of FIG. 17 is attached has the same effect as the power semiconductor device 1 to which the press fit terminal 2 of FIG. 14 is attached.
　実施の形態２の他の電力用半導体装置１は、プレスフィット端子２のアンカー部２ｎが、内側をくり抜いた枠形状に形成されるとともに、くり抜かれたアンカー部貫通孔（貫通孔２ｎｈ）に、内側に向かって少なくとも二箇所の突起部２ｔを有するので、実施の形態１の構成よりもプレスフィット端子２とコネクタ部５との保持力を高くでき、小型で信頼性を高くすることができる。 In another power semiconductor device 1 of the second embodiment, the anchor part 2n of the press-fit terminal 2 is formed in a frame shape hollowed out inside, and the anchor part through hole (through hole 2nh) hollowed out Since there are at least two protruding portions 2t toward the inside, the holding force between the press-fit terminal 2 and the connector portion 5 can be made higher than in the configuration of the first embodiment, and the size and reliability can be increased.
実施の形態３．
　図１９～図２２を参照して、本発明の実施の形態３における電力用半導体装置１について説明する。図１９は本発明の実施の形態３によるプレスフィット端子を示す図であり、図２０は図１９のプレスフィット端子及びコネクタ部を示す図である。図２１、図２２は、図１９のプレスフィット端子の基板挿入端子の角度調整作用を説明する図である。図２１はプレスフィット端子２の基板挿入端子２ｂを外部基板５０のスルーホール５１に挿入する前の状態を示しており、図２２はプレスフィット端子２の基板挿入端子２ｂが外部基板５０のスルーホール５１に挿入された状態を示している。実施の形態３における電力用半導体装置１は、実施の形態１及び２と比較してプレスフィット端子２の形状のみが異なる。このため以下ではこの相違点のみについて説明する。 Embodiment 3 FIG.
A power semiconductor device 1 according to the third embodiment of the present invention will be described with reference to FIGS. FIG. 19 is a diagram showing a press-fit terminal according to Embodiment 3 of the present invention, and FIG. 20 is a diagram showing the press-fit terminal and connector portion of FIG. 21 and 22 are diagrams for explaining the angle adjusting action of the board insertion terminal of the press-fit terminal of FIG. 21 shows a state before the board insertion terminal 2b of the press-fit terminal 2 is inserted into the through hole 51 of the external board 50. FIG. 22 shows the state where the board insertion terminal 2b of the press-fit terminal 2 is a through hole of the external board 50. 51 shows a state of being inserted. The power semiconductor device 1 in the third embodiment is different from the first and second embodiments only in the shape of the press-fit terminal 2. Therefore, only this difference will be described below.
　実施の形態３のプレスフィット端子２は、コネクタ挿入端子２ａと基板挿入端子２ｂとの間に位置する胴体部の形状が、図１７に示した実施の形態２の他のプレスフィット端子２と異なる。図１７のプレスフィット端子２は胴体部がストレート部２ｓのみであったが、実施の形態３のプレスフィット端子２は胴体部４０がストレート部２ｓと湾曲底面部４１を有している。ストレート部２ｓは胴体部４０における基板挿入端子２ｂ側に位置し、湾曲底面部４１は胴体部４０におけるコネクタ挿入端子２ａ側に位置する。湾曲底面部４１は、コネクタ挿入端子２ａ側に向かって突出しており、すなわち凸形状に湾曲している。 The press-fit terminal 2 of the third embodiment is different from the other press-fit terminals 2 of the second embodiment shown in FIG. 17 in the shape of the body part located between the connector insertion terminal 2a and the board insertion terminal 2b. . The press-fit terminal 2 in FIG. 17 has the trunk portion only of the straight portion 2s. However, in the press-fit terminal 2 of the third embodiment, the trunk portion 40 has the straight portion 2s and the curved bottom portion 41. The straight portion 2 s is located on the board insertion terminal 2 b side in the body portion 40, and the curved bottom surface portion 41 is located on the connector insertion terminal 2 a side in the body portion 40. The curved bottom surface portion 41 protrudes toward the connector insertion terminal 2a side, that is, is curved in a convex shape.
　なお、図１９～図２２では、図１７に示した実施の形態２の他のプレスフィット端子２の胴体部を変更したプレスフィット端子２の例を示したが、実施の形態３のプレスフィット端子２は、これに限定されない。すなわち、実施の形態３のプレスフィット端子２は、実施の形態１における図５のプレスフィット端子２、実施の形態２の図１４のプレスフィット端子２の胴体部を変更したプレスフィット端子でもよい。また、実施の形態１及び２において、胴体部において符号４０は付していないが、実施の形態１及び２におけるプレスフィット端子２のストレート部２ｓは、胴体部４０でもある。 19 to 22 show an example of the press-fit terminal 2 in which the body portion of the other press-fit terminal 2 of the second embodiment shown in FIG. 17 is changed, the press-fit terminal of the third embodiment is shown. 2 is not limited to this. That is, the press-fit terminal 2 of the third embodiment may be a press-fit terminal in which the body portion of the press-fit terminal 2 of FIG. 5 in the first embodiment and the press-fit terminal 2 of FIG. 14 of the second embodiment is changed. Further, in Embodiments 1 and 2, the reference numeral 40 is not attached to the body portion, but the straight portion 2 s of the press-fit terminal 2 in Embodiments 1 and 2 is also the body portion 40.
　図２０に示すように、実施の形態３のプレスフィット端子２は、実施の形態１及び２のプレスフィット端子２と異なって胴体部４０の湾曲底面部４１が端子固定部底面５ｃｂと面で接触するのではなく、胴体部４０の湾曲底面部４１が筒状部５ｈｕの端部、すなわち筒状部５ｈｕの開口部と同心円状に接触する。実施の形態３のプレスフィット端子２は、胴体部４０の湾曲底面部４１が筒状部５ｈｕの端部、すなわち筒状部５ｈｕの開口部と同心円状に接触するので、基板挿入端子２ｂが電力用半導体装置１の主面に対して傾いた場合でも、外部基板５０のスルーホール５１に基板挿入端子２ｂを挿入する際に基板挿入端子２ｂがスルーホール５１に確実に挿入することができる。以下に実施の形態３のプレスフィット端子２の作用を説明する。 As shown in FIG. 20, the press-fit terminal 2 of the third embodiment is different from the press-fit terminals 2 of the first and second embodiments in that the curved bottom surface portion 41 of the body portion 40 is in contact with the terminal fixing portion bottom surface 5cb. Instead, the curved bottom surface portion 41 of the body portion 40 comes into concentric contact with the end of the tubular portion 5hu, that is, the opening of the tubular portion 5hu. In the press-fit terminal 2 according to the third embodiment, the curved bottom surface portion 41 of the body portion 40 is concentrically contacted with the end portion of the cylindrical portion 5hu, that is, the opening portion of the cylindrical portion 5hu. Even when the board insertion terminal 2 b is inserted into the through hole 51 of the external board 50, the board insertion terminal 2 b can be reliably inserted into the through hole 51 even when tilted with respect to the main surface of the semiconductor device 1. The operation of the press-fit terminal 2 of the third embodiment will be described below.
　図２１では、プレスフィット端子２の基板挿入端子２ｂが、電力用半導体装置１の主面すなわち、封止体４の主面４ｆに対して傾いた場合を示している。図２１では、コネクタ挿入端子２ａのコネクタ挿入端子根元部２ａｃが曲がり、胴体部４０及び基板挿入端子２ｂがスルーホール５１のスルーホール中心５２に対して傾いている例を示した。また、図２１では、基板挿入端子２ｂの基板挿入端子根元部２ｂｃは曲がっていない例を示した。実施の形態３のプレスフィット端子２は、湾曲底面部４１が筒状部５ｈｕの端部、すなわち筒状部５ｈｕの開口部に対して同心円状に接触するので、傾いた基板挿入端子２ｂが外部基板５０のスルーホール５１に接触すると、湾曲底面部４１とプレスフィット部２ｐ間、例えばコネクタ挿入端子根元部２ａｃが座屈して、基板挿入端子２ｂの角度を調整することができる。 21 shows a case where the board insertion terminal 2b of the press-fit terminal 2 is inclined with respect to the main surface of the power semiconductor device 1, that is, the main surface 4f of the sealing body 4. FIG. 21 shows an example in which the connector insertion terminal root portion 2ac of the connector insertion terminal 2a is bent and the body portion 40 and the board insertion terminal 2b are inclined with respect to the through hole center 52 of the through hole 51. FIG. 21 shows an example in which the substrate insertion terminal root portion 2bc of the substrate insertion terminal 2b is not bent. In the press-fit terminal 2 of the third embodiment, the curved bottom surface portion 41 is concentrically in contact with the end of the cylindrical portion 5hu, that is, the opening of the cylindrical portion 5hu. When contacting the through hole 51 of the substrate 50, the connector insertion terminal root 2ac, for example, is buckled between the curved bottom surface portion 41 and the press fit portion 2p, and the angle of the substrate insertion terminal 2b can be adjusted.
　図２２に示すように、実施の形態３のプレスフィット端子２は、基板挿入端子２ｂがスルーホール５１の奥側（図２２において上側）に挿入されるにしたがって、胴体部４０の湾曲底面部４１と筒状部５ｈｕの端部、すなわち筒状部５ｈｕの開口部との接触位置が移動しながら基板挿入端子２ｂの傾きが調整される。すなわち、実施の形態３のプレスフィット端子２は、基板挿入端子２ｂの先端部と基板挿入端子根元部２ｂｃの中心を通過する基板挿入端子軸５３とスルーホール中心５２と角度が小さくなる。基板挿入端子２ｂがスルーホール５１に完全に挿入されると、胴体部４０におけるストレート部２ｓのストレート部上面２ｓｕがスルーホール５１の底部金属５１ａと接触し、ストレート部上面２ｓｕとスルーホール５１の底部金属５１ａとが互いに平行になる。図２２では、基板挿入端子２ｂの基板挿入端子軸５３がスルーホール５１のスルーホール中心５２に平行になるように、基板挿入端子２ｂがスルーホール５１に挿入されている例を示した。なお、基板挿入端子２ｂがスルーホール５１に挿入される際に、内部がくり抜かれた枠形状の基板挿入端子２ｂがスルーホール５１に押し付けられて変形するが、この基板挿入端子２ｂの変形具合によっては基板挿入端子軸５３がスルーホール中心５２に対して完全に平行ではなく、多少傾く場合もある。この場合であっても、基板挿入端子２ｂの角度を調整することができるので、問題はない。すなわち、基板挿入端子２ｂの基板挿入端子軸５３がスルーホール５１のスルーホール中心５２に略平行（実質的に平行）になるように、基板挿入端子２ｂがスルーホール５１に挿入されても構わない。 As shown in FIG. 22, the press-fit terminal 2 of the third embodiment has a curved bottom surface portion 41 of the body portion 40 as the board insertion terminal 2 b is inserted into the back side of the through hole 51 (upper side in FIG. 22). The inclination of the board insertion terminal 2b is adjusted while the contact position of the cylindrical portion 5hu, that is, the opening position of the cylindrical portion 5hu moves. That is, in the press-fit terminal 2 of the third embodiment, the angle between the substrate insertion terminal shaft 53 passing through the tip of the substrate insertion terminal 2b and the center of the substrate insertion terminal root 2bc and the through-hole center 52 is small. When the board insertion terminal 2 b is completely inserted into the through hole 51, the straight portion upper surface 2 su of the straight portion 2 s in the body portion 40 comes into contact with the bottom metal 51 a of the through hole 51, and the straight portion upper surface 2 su and the bottom portion of the through hole 51. The metal 51a is parallel to each other. FIG. 22 shows an example in which the board insertion terminal 2 b is inserted into the through hole 51 so that the board insertion terminal shaft 53 of the board insertion terminal 2 b is parallel to the through hole center 52 of the through hole 51. When the board insertion terminal 2b is inserted into the through hole 51, the frame-shaped board insertion terminal 2b with the inside hollowed out is pressed against the through hole 51 to be deformed. Depending on the deformation of the board insertion terminal 2b, In some cases, the board insertion terminal shaft 53 is not completely parallel to the through-hole center 52 and is slightly inclined. Even in this case, there is no problem because the angle of the board insertion terminal 2b can be adjusted. That is, the board insertion terminal 2 b may be inserted into the through hole 51 so that the board insertion terminal shaft 53 of the board insertion terminal 2 b is substantially parallel (substantially parallel) to the through hole center 52 of the through hole 51. .
　実施の形態３の電力用半導体装置１は、実施の形態１及び２と同様に、プレスフィット端子２がメス型コネクタ（コネクタ部５）の底（底部５ｂ）及び側面（筒状部５ｈｄ）に固定されたアンカー部２ｎとリードパターン２３、２４、２５の貫通孔２１ｈに接続されたプレスフィット部２ｐを有するので、プレスフィット端子２とコネクタ（コネクタ部５）との保持力を高くでき、小型で信頼性を高くすることができる。 In the power semiconductor device 1 according to the third embodiment, as in the first and second embodiments, the press-fit terminal 2 is provided on the bottom (bottom portion 5b) and the side surface (tubular portion 5hd) of the female connector (connector portion 5). Since it has a fixed anchor portion 2n and a press-fit portion 2p connected to the through holes 21h of the lead patterns 23, 24 and 25, the holding force between the press-fit terminal 2 and the connector (connector portion 5) can be increased, and the size can be reduced. Can increase reliability.
　実施の形態３のプレスフィット端子２は、基板挿入端子２ｂがスルーホール５１に挿入される際に基板挿入端子２ｂの傾きが調整されるので、外部基板５０のスルーホール中心５２に対して基板挿入端子２ｂの位置がずれても、基板挿入端子２ｂとストレート部２ｓ間、例えば基板挿入端子根元部２ｂｃが折れ曲がって、外部基板５０への挿入不良が発生することが無い。このため、実施の形態３のプレスフィット端子２が装着された電力用半導体装置１は、外部基板５０へのプレスフィット端子２の挿入不良の発生率が減少し、歩留まりが向上する。 In the press-fit terminal 2 according to the third embodiment, since the inclination of the board insertion terminal 2b is adjusted when the board insertion terminal 2b is inserted into the through hole 51, the board insertion with respect to the through hole center 52 of the external board 50 is performed. Even if the position of the terminal 2b is deviated, the board insertion terminal 2b and the straight part 2s, for example, the board insertion terminal root part 2bc, is not bent and the insertion failure into the external board 50 does not occur. For this reason, in the power semiconductor device 1 to which the press-fit terminal 2 of the third embodiment is mounted, the incidence of defective insertion of the press-fit terminal 2 into the external substrate 50 is reduced, and the yield is improved.
実施の形態４．
　図２３～図２９を参照して、本発明の実施の形態４における電力用半導体装置１について説明する。図２３は本発明の実施の形態４によるプレスフィット端子を示す図であり、図２４は図２３のプレスフィット端子及び第一のコネクタ部を示す図である。図２５は図２４の第一のコネクタ部及びプレスフィット端子をＢ方向から見た図であり、図２６は図２４の第一のコネクタ部を封止体の主面側から見た図である。図２７は、図２３のプレスフィット端子及び第二のコネクタ部を示す図である。図２８は図２７の第二のコネクタ部及びプレスフィット端子をＢ方向から見た図であり、図２９は図２７の第二のコネクタ部を封止体の主面側から見た図である。実施の形態４における電力用半導体装置１は、実施の形態１及び２と比較してプレスフィット端子２とコネクタ部５の形状が異なる。このため以下ではこの相違点のみについて説明する。 Embodiment 4 FIG.
A power semiconductor device 1 according to the fourth embodiment of the present invention will be described with reference to FIGS. FIG. 23 is a view showing a press-fit terminal according to Embodiment 4 of the present invention, and FIG. 24 is a view showing the press-fit terminal and the first connector portion of FIG. 25 is a view of the first connector portion and the press-fit terminal of FIG. 24 as viewed from the direction B, and FIG. 26 is a view of the first connector portion of FIG. 24 as viewed from the main surface side of the sealing body. . FIG. 27 is a diagram illustrating the press-fit terminal and the second connector portion of FIG. 28 is a view of the second connector portion and the press-fit terminal of FIG. 27 as viewed from the B direction, and FIG. 29 is a view of the second connector portion of FIG. 27 as viewed from the main surface side of the sealing body. . The power semiconductor device 1 according to the fourth embodiment differs from the first and second embodiments in the shapes of the press-fit terminal 2 and the connector portion 5. Therefore, only this difference will be described below.
　まず、実施の形態４のプレスフィット端子２の形状について説明する。実施の形態４のプレスフィット端子２は、板状に形成されたプレスフィット端子であり、コネクタ挿入端子２ａと基板挿入端子２ｂとの間に位置する胴体部の形状が、図１７に示した実施の形態２の他のプレスフィット端子２と異なる。実施の形態４のプレスフィット端子２は、胴体部４０であるストレート部２ｓが、その内部において円状又は楕円状にくり抜かれた中抜き部４２を有する点で図１７のプレスフィット端子２と異なる。中抜き部４２は、図２４、図２７に示すように、プレスフィット端子２を電力用半導体装置１に挿入した際の荷重でつぶれて変形する。なお、図２３では、楕円形状の中抜き部４２を有するプレスフィット端子２の例を示した。 First, the shape of the press-fit terminal 2 of the fourth embodiment will be described. The press-fit terminal 2 of the fourth embodiment is a press-fit terminal formed in a plate shape, and the shape of the body portion located between the connector insertion terminal 2a and the board insertion terminal 2b is the embodiment shown in FIG. This is different from other press-fit terminals 2 of the second form. The press-fit terminal 2 of the fourth embodiment is different from the press-fit terminal 2 of FIG. 17 in that the straight portion 2s that is the body portion 40 has a hollow portion 42 that is hollowed out in a circular shape or an elliptic shape. . As shown in FIGS. 24 and 27, the hollow portion 42 is crushed and deformed by a load when the press-fit terminal 2 is inserted into the power semiconductor device 1. In addition, in FIG. 23, the example of the press fit terminal 2 which has the elliptical hollow part 42 was shown.
　実施の形態４のプレスフィット端子２は、電力用半導体装置１に挿入した際に中抜き部４２がつぶれることで、ストレート部２ｓの一部が幅方向に広がって、コネクタ部５における端子固定部５ｃの側面に接触する。このときストレート部２ｓの一部が端子固定部５ｃの側面に食い込んでアンカー効果を発揮することにより、プレスフィット端子２のストレート部２ｓがコネクタ部５における端子固定部５ｃの側面に固定される。実施の形態４のプレスフィット端子２は、図１７のプレスフィット端子２よりもプレスフィット端子２とコネクタ部５との保持力を高くでき、信頼性を高くすることができる。これは、中抜き部４２を有するプレスフィット端子２の効果である。抜き部４２を有する実施の形態４のプレスフィット端子２が装着された電力用半導体装置１は、プレスフィット端子２とコネクタ部５との保持力を高くでき、信頼性を高くすることができる。 In the press-fit terminal 2 according to the fourth embodiment, when the hollow portion 42 is crushed when inserted into the power semiconductor device 1, a part of the straight portion 2 s expands in the width direction, and the terminal fixing portion in the connector portion 5 It contacts the side surface of 5c. At this time, a part of the straight portion 2 s bites into the side surface of the terminal fixing portion 5 c and exhibits an anchor effect, whereby the straight portion 2 s of the press-fit terminal 2 is fixed to the side surface of the terminal fixing portion 5 c in the connector portion 5. The press-fit terminal 2 according to the fourth embodiment can have a higher holding force between the press-fit terminal 2 and the connector portion 5 than the press-fit terminal 2 in FIG. This is an effect of the press-fit terminal 2 having the hollow portion 42. The power semiconductor device 1 to which the press-fit terminal 2 according to the fourth embodiment having the extraction portion 42 is attached can increase the holding force between the press-fit terminal 2 and the connector portion 5 and can increase the reliability.
　なお、図２３～図２９では、図１７に示した実施の形態２の他のプレスフィット端子２の胴体部を変更したプレスフィット端子２の例を示した。実施の形態４のプレスフィット端子２は、これに限定することなく、実施の形態１における図５のプレスフィット端子２、実施の形態２の図１４のプレスフィット端子２の胴体部を変更したプレスフィット端子でもよい。 23 to 29 show an example of the press-fit terminal 2 in which the body part of another press-fit terminal 2 of the second embodiment shown in FIG. 17 is changed. The press-fit terminal 2 of the fourth embodiment is not limited to this, and is a press in which the body portion of the press-fit terminal 2 of FIG. 5 in the first embodiment and the press-fit terminal 2 of FIG. 14 of the second embodiment is changed. Fit terminals may be used.
　次に実施の形態４のコネクタ部５の形状について説明する。図２５に示した第一のコネクタ部５は図２６のＢ－Ｂ線による断面を示しており、図２４に示した第一のコネクタ部５は図２６のＣ－Ｃ線による断面を示している。図２５、図２６では、コネクタ部５の筒状部５ｈｄの一部がリードパターン２３の底面から底部５ｂに向けて狭くなり、底部５ｂがプレスフィット端子２の板厚程度の幅になる狭底部４３ａ、４３ｂ、４３ｃ、４３ｄを有している。図２６では、底部５ｂにおいて、４つの狭底部４３ａ、４３ｂ、４３ｃ、４３ｄが設けられた例を示した。４つの狭底部４３ａ、４３ｂ、４３ｃ、４３ｄは、底部５ｂの外周部と破線四辺形４７の各一辺との間に形成されている。各狭底部４３ａ、４３ｂ、４３ｃ、４３ｄは、リードパターン２３、２４、２５の貫通孔２１ｈの径よりも狭く形成されている。図２４におけるプレスフィット端子２は、狭底部４３ａと狭底部４３ｂに挿入された例を示している。なお、狭底部の符号は総括的に４３を用い、区別する場合に４３ａ、４３ｂ、４３ｃ、４３ｄを用いる。 Next, the shape of the connector part 5 according to the fourth embodiment will be described. 25 shows a cross section taken along line BB in FIG. 26, and the first connector part 5 shown in FIG. 24 shows a cross section taken along line CC in FIG. Yes. 25 and 26, a part of the cylindrical portion 5hd of the connector portion 5 becomes narrower from the bottom surface of the lead pattern 23 toward the bottom portion 5b, and the bottom portion 5b becomes a width about the plate thickness of the press-fit terminal 2. 43a, 43b, 43c, 43d. FIG. 26 shows an example in which four narrow bottom portions 43a, 43b, 43c, and 43d are provided in the bottom portion 5b. The four narrow bottom portions 43a, 43b, 43c, and 43d are formed between the outer peripheral portion of the bottom portion 5b and each side of the broken-line quadrilateral 47. Each narrow bottom portion 43a, 43b, 43c, 43d is formed narrower than the diameter of the through hole 21h of the lead patterns 23, 24, 25. 24 shows an example in which the press-fit terminal 2 is inserted into the narrow bottom portion 43a and the narrow bottom portion 43b. In addition, the code | symbol of a narrow bottom part uses 43 generally, and uses 43a, 43b, 43c, 43d when distinguishing.
　第一上部開口４４は封止体４の主面４ｆに形成されたコネクタ部５の開口であり、第二上部開口４５は表面テーパ部５ｓｔの下端部におけるコネクタ部５の開口である。延伸部開口４６は、延伸部５ｅの上端部、すなわち筒状部５ｈｕの上端部に形成されたコネクタ部５の開口である。第一のコネクタ部５における底部５ｂの形状は、破線四辺形４７と４つの狭底部４３ａ、４３ｂ、４３ｃ、４３ｄを合わせた形状である。 The first upper opening 44 is an opening of the connector part 5 formed in the main surface 4f of the sealing body 4, and the second upper opening 45 is an opening of the connector part 5 at the lower end of the surface taper part 5st. The extension part opening 46 is an opening of the connector part 5 formed at the upper end part of the extension part 5e, that is, the upper end part of the cylindrical part 5hu. The shape of the bottom portion 5b in the first connector portion 5 is a shape obtained by combining the broken line quadrilateral 47 and the four narrow bottom portions 43a, 43b, 43c, and 43d.
　図２５のようにプレスフィット端子２が矢印４８又は矢印４９の方向に回転して挿入された場合に、プレスフィット端子２のコネクタ挿入端子２ａがプレスフィット端子２の板厚ｔｓ方向の幅（図２５において左右方向の幅）が狭くなるように変化している筒状部５ｈｄに至ると、プレスフィット端子２の板厚面（板厚ｔｓが見える面）に垂直な正面及び裏面がこの正面及び裏面に対向する筒状部５ｈｄの傾斜に沿って移動し、すなわちこの筒状部５ｈｄがガイドになって、プレスフィット端子２の矢印４８又は矢印４９に示した方向の回転を抑制し、プレスフィット端子２を垂直方向（コネクタ部５の延伸方向）に矯正する。実施の形態４のコネクタ部５は、プレスフィット端子２のコネクタ挿入端子２ａが狭底部４３ａ、４３ｂに至ると、プレスフィット端子２を垂直方向（コネクタ部５の延伸方向）に向くように配置できる。従って、このようなコネクタ部５を備えた実施の形態４の電力用半導体装置１は、プレスフィット端子２がコネクタ部５の延伸方向に対して傾いて挿入されても、プレスフィット端子２をコネクタ部５の延伸方向に向くように配置できる。このため、実施の形態４の電力用半導体装置１は、プレスフィット端子２の位置精度を高めることができ、製品歩留まりを向上させることができる。なお、プレスフィット端子２は、少なくともコネクタ挿入端子２ａが板状に形成されていればよい。コネクタ挿入端子２ａが板状に形成されたプレスフィット端子２は、そのアンカー部２ｎがリードパターン２３、２４、２５の貫通孔２１ｈの径よりも狭い狭底部４３に固定することができる。 25, when the press-fit terminal 2 is rotated and inserted in the direction of the arrow 48 or the arrow 49, the connector insertion terminal 2a of the press-fit terminal 2 is the width of the press-fit terminal 2 in the plate thickness ts direction (FIG. 25, the front and back surfaces perpendicular to the plate thickness surface (the surface where the plate thickness ts can be seen) of the press-fit terminal 2 are the front and back surfaces. It moves along the inclination of the cylindrical part 5hd facing the back surface, that is, this cylindrical part 5hd serves as a guide to suppress the rotation of the press-fit terminal 2 in the direction indicated by the arrow 48 or 49, and press fit The terminal 2 is corrected in the vertical direction (the extending direction of the connector portion 5). The connector part 5 of Embodiment 4 can be arranged so that the press-fit terminal 2 faces in the vertical direction (extending direction of the connector part 5) when the connector insertion terminal 2a of the press-fit terminal 2 reaches the narrow bottom parts 43a and 43b. . Therefore, the power semiconductor device 1 according to the fourth embodiment provided with such a connector portion 5 has the press-fit terminal 2 connected to the connector even when the press-fit terminal 2 is inserted with an inclination with respect to the extending direction of the connector portion 5. It can arrange | position so that it may face the extending | stretching direction of the part 5. FIG. For this reason, the power semiconductor device 1 according to the fourth embodiment can improve the positional accuracy of the press-fit terminal 2 and can improve the product yield. The press-fit terminal 2 only needs to have at least the connector insertion terminal 2a formed in a plate shape. The press-fit terminal 2 in which the connector insertion terminal 2a is formed in a plate shape can be fixed to the narrow bottom portion 43 whose anchor portion 2n is narrower than the diameter of the through hole 21h of the lead patterns 23, 24, 25.
　なお、図２４～図２６では、プレスフィット端子２のコネクタ挿入端子２ａが２つの狭底部４３ａ、４３ｂに配置される例を示したが、例えば１つの狭底部４３ａを備えているコネクタ部５にプレスフィット端子２のコネクタ挿入端子２ａが配置される場合でも構わない。１つの狭底部４３ａを備えているコネクタ部５の場合でも、コネクタ挿入端子２ａの片側（図２４においてコネクタ挿入端子２ａの左側）が狭底部４３ａに挿入されて配置されるので、プレスフィット端子２を垂直方向（コネクタ部５の延伸方向）に向くように配置できる。１つの狭底部４３ａを備えているコネクタ部５の場合には、狭底部４３ａの長さ、すなわちプレスフィット端子２の幅Ｗａ、Ｗｆ方向の長さ（図２６において左右方向の長さ）が長い方が望ましい。狭底部４３ａの長さが長いコネクタ部５は、プレスフィット端子２のコネクタ挿入端子２ａを保持する面積が増えるので、狭底部４３ａの長さが短いコネクタ部５よりも高精度にプレスフィット端子２を垂直方向（コネクタ部５の延伸方向）に向くように配置できる。 24 to 26 show an example in which the connector insertion terminal 2a of the press-fit terminal 2 is disposed on the two narrow bottom portions 43a and 43b. However, for example, the connector portion 5 having one narrow bottom portion 43a is connected to the connector portion 5 having one narrow bottom portion 43a. Even when the connector insertion terminal 2a of the press-fit terminal 2 is arranged. Even in the case of the connector portion 5 having one narrow bottom portion 43a, one side of the connector insertion terminal 2a (the left side of the connector insertion terminal 2a in FIG. 24) is inserted and arranged in the narrow bottom portion 43a. Can be arranged so as to face the vertical direction (extending direction of the connector portion 5). In the case of the connector portion 5 having one narrow bottom portion 43a, the length of the narrow bottom portion 43a, that is, the width Wa and the length in the Wf direction of the press-fit terminal 2 (length in the left-right direction in FIG. 26) is long. Is preferable. The connector portion 5 having a long narrow bottom portion 43a has a larger area for holding the connector insertion terminal 2a of the press-fit terminal 2, so that the press-fit terminal 2 has a higher accuracy than the connector portion 5 having a short length of the narrow bottom portion 43a. Can be arranged so as to face the vertical direction (extending direction of the connector portion 5).
　図２７～図２９に示すコネクタ部５は、１つの狭底部４３を備える場合で、かつ最大の狭底部長さを有する例である。図２７に示した第二のコネクタ部５は図２９のＣ－Ｃ線による断面を示しており、図２８に示した第二のコネクタ部５は図２９のＢ－Ｂ線による断面を示している。図２８、図２９に示した第二のコネクタ部５は、コネクタ部５の筒状部５ｈｄの一部がリードパターン２３の底面から底部５ｂに向けて狭くなり、底部５ｂがプレスフィット端子２の板厚程度の幅になる狭底部４３を有している。この場合、底部５ｂは狭底部４３になっているので、底部５ｂがプレスフィット端子２の板厚程度の幅になる狭底形状になっているということもできる。 27 to 29 is an example in which one narrow bottom portion 43 is provided and the maximum narrow bottom portion length is provided. 27 shows a cross section taken along line CC of FIG. 29, and the second connector part 5 shown in FIG. 28 shows a cross section taken along line BB of FIG. Yes. In the second connector portion 5 shown in FIGS. 28 and 29, a part of the cylindrical portion 5 hd of the connector portion 5 becomes narrower from the bottom surface of the lead pattern 23 toward the bottom portion 5 b, and the bottom portion 5 b is the press-fit terminal 2. It has a narrow bottom 43 having a width of about the plate thickness. In this case, since the bottom portion 5 b is the narrow bottom portion 43, it can also be said that the bottom portion 5 b has a narrow bottom shape with a width of about the plate thickness of the press-fit terminal 2.
　第二のコネクタ部５は、第一のコネクタ部５と同様に作用するので、第一のコネクタ部５と同様の効果を奏する。従って、第二のコネクタ部５を備えた実施の形態４の電力用半導体装置１は、プレスフィット端子２がコネクタ部５の延伸方向に対して傾いて挿入されても、プレスフィット端子２を第二のコネクタ部５の延伸方向に向くように配置できる。このため、実施の形態４の電力用半導体装置１は、プレスフィット端子２の位置精度を高めることができ、製品歩留まりを向上させることができる。 Since the second connector portion 5 operates in the same manner as the first connector portion 5, the same effect as the first connector portion 5 is achieved. Therefore, the power semiconductor device 1 according to the fourth embodiment including the second connector portion 5 has the press-fit terminal 2 connected to the press-fit terminal 2 even when the press-fit terminal 2 is inserted with an inclination with respect to the extending direction of the connector portion 5. It can arrange | position so that it may face in the extending | stretching direction of the 2nd connector part 5. FIG. For this reason, the power semiconductor device 1 according to the fourth embodiment can improve the positional accuracy of the press-fit terminal 2 and can improve the product yield.
　実施の形態４の電力用半導体装置１は、実施の形態１及び２と同様に、プレスフィット端子２がメス型コネクタ（コネクタ部５）の底（底部５ｂ）及び側面（筒状部５ｈｄ）に固定されたアンカー部２ｎとリードパターン２３、２４、２５の貫通孔２１ｈに接続されたプレスフィット部２ｐを有するので、プレスフィット端子２とコネクタ（コネクタ部５）との保持力を高くでき、小型で信頼性を高くすることができる。 In the power semiconductor device 1 according to the fourth embodiment, as in the first and second embodiments, the press-fit terminals 2 are provided on the bottom (bottom portion 5b) and the side surface (tubular portion 5hd) of the female connector (connector portion 5). Since it has a fixed anchor portion 2n and a press-fit portion 2p connected to the through holes 21h of the lead patterns 23, 24 and 25, the holding force between the press-fit terminal 2 and the connector (connector portion 5) can be increased, and the size can be reduced. Can increase reliability.
　なお、上記各実施の形態においては、スイッチング素子（トランジスタ）１１や整流素子１２として機能する電力用半導体素子８には、シリコンウエハを基材とした一般的な素子でも良いが、本発明においては炭化珪素（ＳｉＣ）や窒化ガリウム（ＧａＮ）系材料、またはダイヤモンドといったシリコンと較べてバンドギャップが広い、いわゆるワイドバンドギャップ半導体材料を用いることができる。ワイドバンドギャップ半導体材料を用いて形成され、電流許容量および高温動作が可能な半導体素子を用いた場合に、本発明の電力用半導体装置１は、特に顕著な効果が現れる。特に炭化珪素を用いた電力用半導体素子に好適に用いることができる。デバイス種類としては、特に限定する必要はないが、ＩＧＢＴの他に、ＭＯＳＦＥＴ（Metal　Oxide　Semiconductor　Field-Effect-Transistor）でもよく、その他縦型半導体素子であればよい。 In each of the above embodiments, the power semiconductor element 8 functioning as the switching element (transistor) 11 or the rectifying element 12 may be a general element based on a silicon wafer, but in the present invention, A so-called wide band gap semiconductor material having a wider band gap than silicon such as silicon carbide (SiC), gallium nitride (GaN) -based material, or diamond can be used. The power semiconductor device 1 of the present invention exhibits a particularly remarkable effect when a semiconductor element that is formed using a wide band gap semiconductor material and is capable of current tolerance and high-temperature operation is used. In particular, it can be suitably used for a power semiconductor element using silicon carbide. The device type is not particularly limited, but may be a MOSFET (Metal Oxide Semiconductor Field-Effect-Transistor) other than the IGBT, or any other vertical semiconductor element.
　ワイドバンドギャップ半導体によって形成されたスイッチング素子１１や整流素子１２（各実施の形態における電力用半導体素子８）は、シリコンで形成された素子よりも電力損失が低いため、スイッチング素子１１や整流素子１２における高効率化が可能であり、ひいては、電力用半導体装置１の高効率化が可能となる。さらに、耐電圧性が高く、許容電流密度も高いため、スイッチング素子１１や整流素子１２の小型化が可能であり、これら小型化されたスイッチング素子１１や整流素子１２を用いることにより、電力用半導体装置１も小型化が可能となる。また耐熱性が高いので、高温動作が可能であり、ヒートシンクに装着する放熱フィン（冷却器）の小型化や、水冷部の空冷化も可能となるので、電力用半導体装置１の一層の小型化が可能になる。 Since the switching element 11 and the rectifying element 12 (power semiconductor element 8 in each embodiment) formed of a wide band gap semiconductor have lower power loss than the element formed of silicon, the switching element 11 and the rectifying element 12 The efficiency of the power semiconductor device 1 can be improved. Furthermore, since the withstand voltage is high and the allowable current density is high, the switching element 11 and the rectifying element 12 can be downsized. By using the downsized switching element 11 and rectifying element 12, a power semiconductor can be used. The apparatus 1 can also be reduced in size. In addition, since the heat resistance is high, it is possible to operate at high temperature, and it is possible to reduce the size of the heat dissipating fins (coolers) attached to the heat sink and the air cooling of the water cooling portion. Is possible.
　そのため、外部との電気接続をするためのコネクタ部５を主面４ｆ側に形成する構造は、小型化に必須なものとなる。このとき、上記各実施の形態のように、プレスフィット端子２のような端子を接続するためのメス型コネクタであるコネクタ部５をリードフレーム２１内の貫通孔２１ｈに連通するように形成したので、各コネクタ部５の位置精度が高く、電気接続への応力が少なくなるので、信頼性を向上させることができる。つまり、本発明による効果を発揮することで、ワイドバンドギャップ半導体の特性を活かすことができるようになる。 Therefore, the structure in which the connector portion 5 for electrical connection with the outside is formed on the main surface 4f side is essential for downsizing. At this time, as in each of the above embodiments, the connector portion 5 that is a female connector for connecting a terminal such as the press-fit terminal 2 is formed so as to communicate with the through hole 21h in the lead frame 21. Since the positional accuracy of each connector part 5 is high and the stress on the electrical connection is reduced, the reliability can be improved. That is, by exhibiting the effect of the present invention, the characteristics of the wide band gap semiconductor can be utilized.
　なお、スイッチング素子１１及び整流素子１２の両方がワイドバンドギャップ半導体によって形成されていても、いずれか一方の素子がワイドバンドギャップ半導体によって形成されていてもよい。 Note that both the switching element 11 and the rectifying element 12 may be formed of a wide band gap semiconductor, or one of the elements may be formed of a wide band gap semiconductor.
　なお、実施の形態１～４の封止体の形成手法としてはトランスファモールドに限らず射出成型や圧縮成型でも良く、樹脂も熱硬化性樹脂や熱可塑性樹脂を用いても同様の効果が得られる。対象パッケージとしては本発明構造に限らず、リードフレームや基板を有するパッケージであれば同様の効果が得られる。端子方向はパッケージの主面方向に限らず、内部のリードフレームを垂直に折り曲げるなどで変形させて、プレスフィット端子を側面方向に突出することもできる。パッケージは表面から端子を突出す以外にも，側面から端子を突出すＤＩＰ（Dual　Inline　Package）やＳＩＰ（Single　Inline　Package）などでも同様の効果が得られる。また、本発明は、矛盾のない範囲内において、各実施の形態の内容を自由に組み合わせたり、各実施の形態を適宜、変形、省略したりすることが可能である。 The sealing body forming method of Embodiments 1 to 4 is not limited to transfer molding, and may be injection molding or compression molding. The same effect can be obtained even if the resin is a thermosetting resin or a thermoplastic resin. . The target package is not limited to the structure of the present invention, and the same effect can be obtained as long as the package has a lead frame and a substrate. The terminal direction is not limited to the main surface direction of the package, and the press-fit terminal can be protruded in the side surface direction by deforming the internal lead frame by bending it vertically. In addition to protruding the terminal from the surface of the package, the same effect can be obtained by DIP (Dual Inline Package) or SIP (Single Inline Package) that protrudes the terminal from the side. In addition, within the scope of the present invention, the contents of the respective embodiments can be freely combined, or the respective embodiments can be appropriately modified or omitted within a consistent range.
１…電力用半導体装置、２…プレスフィット端子、２ａ…コネクタ挿入端子、２ｎ…アンカー部、２ｐ…プレスフィット部、２ｓ…ストレート部（胴体部）、２ｓｂ…ストレート部底面（胴体部底面）、２ｔ…突起部、２ｎｈ…貫通孔（アンカー部貫通孔）、３…回路基板、４…封止体、４ｆ…主面、５…コネクタ部（メス型コネクタ）、５ｂ…底部（底）、５ｃ…端子固定部（主面開口部）、５ｃｂ…端子固定部底面（主面開口部底面）、５ｈｕ…筒状部、５ｈｄ…筒状部（側面）、５ｓｔ…表面テーパ部、５ｂｔ…底面テーパ部、５ｂｃ…底面円形部、６ｆ…回路面、８…電力用半導体素子、２１ｈ…貫通孔、２３…リードパターン、２４…リードパターン、２５…リードパターン、４０…胴体部、４１…湾曲底面部、４２…中抜き部、４３、４３ａ、４３ｂ、４３ｃ、４３ｄ…狭底部、４４…第一上部開口（主面開口部）、Ｗｆ…幅、Ｗａ…幅 DESCRIPTION OF SYMBOLS 1 ... Power semiconductor device, 2 ... Press fit terminal, 2a ... Connector insertion terminal, 2n ... Anchor part, 2p ... Press fit part, 2s ... Straight part (body part), 2sb ... Straight part bottom face (body part bottom face), 2t ... projection part, 2nh ... through hole (anchor part through hole), 3 ... circuit board, 4 ... sealed body, 4f ... main surface, 5 ... connector part (female connector), 5b ... bottom part (bottom), 5c ... terminal fixing part (main surface opening part), 5cb ... terminal fixing part bottom face (main surface opening part bottom face), 5hu ... cylindrical part, 5hd ... cylindrical part (side face), 5st ... surface taper part, 5bt ... bottom taper Part, 5bc ... circular bottom part, 6f ... circuit face, 8 ... power semiconductor element, 21h ... through hole, 23 ... lead pattern, 24 ... lead pattern, 25 ... lead pattern, 40 ... trunk part, 41 ... curved bottom part , 42 ... hollow portion, 3,43a, 43b, 43c, 43d ... narrow bottom, 44 ... first upper opening (the main surface aperture), Wf ... width, Wa ... width

Claims (20)

  1. 　回路基板の回路面に接合された電力用半導体素子と、
    それぞれ一端側が前記電力用半導体素子を含む前記回路面側に設置された回路部材のいずれかと接続されるとともに、他端側の所定位置に貫通孔を有する複数のリードパターンと、
    前記回路部材と前記回路面を封止して前記回路面と略平行な主面を有するように形成された封止体と、
    前記複数のリードパターンのそれぞれの貫通孔に対応し、前記封止体の主面から前記回路面に向かって形成されたメス型コネクタと、
    前記メス型コネクタに固定されたコネクタ挿入端子を有するプレスフィット端子と、を備え、
    前記コネクタ挿入端子は、
    前記メス型コネクタへの挿入先端側に設けられるとともに、前記メス型コネクタの底及び側面に固定されたアンカー部と、
    前記アンカー部よりも挿入深さが浅い部分に設けられるとともに、前記リードパターンの前記貫通孔に接続されたプレスフィット部と、を有することを特徴とする電力用半導体装置。     A power semiconductor element bonded to the circuit surface of the circuit board;
    A plurality of lead patterns each having one end connected to any of the circuit members installed on the circuit surface side including the power semiconductor element, and having a through hole at a predetermined position on the other end,
    A sealing body formed by sealing the circuit member and the circuit surface to have a main surface substantially parallel to the circuit surface;
    Corresponding to each through hole of the plurality of lead patterns, a female connector formed from the main surface of the sealing body toward the circuit surface;
    A press-fit terminal having a connector insertion terminal fixed to the female connector,
    The connector insertion terminal is
    An anchor portion provided on the insertion tip side to the female connector, and fixed to the bottom and side surfaces of the female connector;
    A power semiconductor device, comprising: a press fit portion connected to the through hole of the lead pattern, and provided at a portion where the insertion depth is shallower than the anchor portion.
  2. 　前記プレスフィット端子の前記コネクタ挿入端子は、
    前記プレスフィット部の幅が前記貫通孔の径よりも大きく形成され、
    前記アンカー部の幅が前記貫通孔の径よりも小さく形成されたことを特徴とする請求項１記載の電力用半導体装置。     The connector insertion terminal of the press-fit terminal is
    The width of the press fit portion is formed larger than the diameter of the through hole,
    The power semiconductor device according to claim 1, wherein a width of the anchor portion is smaller than a diameter of the through hole.
  3. 　前記アンカー部は、内側をくり抜いた枠形状に形成されるとともに、くり抜かれたアンカー部貫通孔に、内側に向かって少なくとも二箇所の突起部を有することを特徴とする請求項１または２に記載の電力用半導体装置。 The said anchor part is formed in the frame shape which hollowed the inner side, and has at least two protrusion parts toward the inner side in the hollow anchor part through-hole. Power semiconductor devices.
  4. 　前記アンカー部は、内側をくり抜いた枠形状に形成されるとともに、くり抜かれたアンカー部貫通孔に、内側に向かって少なくとも三箇所の突起部を有し、
    前記突起部のうちの一個である第一突起部は挿入先端側に位置し、かつ該第一突起部は前記アンカー部における幅方向の中央側に位置し、
    前記第一突起部と異なる二個の前記突起部は前記プレスフィット部側に位置し、かつ該突起部のそれぞれは前第一突起部よりも前記アンカー部における幅方向の周辺側に位置することを特徴とする請求項１または２に記載の電力用半導体装置。     The anchor portion is formed in a frame shape hollowed out inside, and has at least three protrusions toward the inside in the hollowed out anchor portion through-hole,
    The first protrusion, which is one of the protrusions, is located on the insertion tip side, and the first protrusion is located on the center side in the width direction of the anchor part,
    The two protrusions different from the first protrusion are positioned on the press-fit portion side, and each of the protrusions is positioned on the peripheral side in the width direction of the anchor portion relative to the front first protrusion. The power semiconductor device according to claim 1 or 2.
  5. 　前記メス型コネクタは、前記封止体の主面である封止体主面の側に前記貫通孔の径よりも大きく形成された主面開口部と、前記主面開口部よりも前記回路面側に、前記貫通孔と同心で前記貫通孔と同じ径に形成された筒状部を備え、
    前記プレスフィット端子は、前記メス型コネクタへの挿入先端側と反対側に前記コネクタ挿入端子の幅よりも大きな胴体部を有し、
    前記胴体部における前記回路面側の胴体部底面が、前記主面開口部における前記回路面側の主面開口部底面に接触していることを特徴とする請求項１から４のいずれか１項に記載の電力用半導体装置。     The female connector includes a main surface opening formed larger than the diameter of the through hole on the sealing body main surface side which is a main surface of the sealing body, and the circuit surface than the main surface opening. On the side, provided with a cylindrical portion concentric with the through hole and formed in the same diameter as the through hole,
    The press-fit terminal has a body portion larger than the width of the connector insertion terminal on the side opposite to the insertion tip side to the female connector,
    5. The body body bottom surface on the circuit surface side in the body portion is in contact with a bottom surface opening surface on the circuit surface side in the main surface opening portion. The power semiconductor device according to the above.
  6. 　前記メス型コネクタは、前記封止体の主面である封止体主面の側に前記貫通孔の径よりも大きく形成された主面開口部と、前記主面開口部よりも前記回路面側に、前記貫通孔と同心で前記貫通孔と同じ径に形成された筒状部を備え、
    前記プレスフィット端子は、前記メス型コネクタへの挿入先端側と反対側に前記コネクタ挿入端子の幅よりも大きな胴体部を有し、
    前記胴体部における前記メス型コネクタ側に、前記メス型コネクタ側に突出した湾曲底面部が設けられており、前記湾曲底面部が前記筒状部の前記封止体主面側の端部に接触していることを特徴とする請求項１から４のいずれか１項に記載の電力用半導体装置。     The female connector includes a main surface opening formed larger than the diameter of the through hole on the sealing body main surface side which is a main surface of the sealing body, and the circuit surface than the main surface opening. On the side, provided with a cylindrical portion concentric with the through hole and formed in the same diameter as the through hole,
    The press-fit terminal has a body portion larger than the width of the connector insertion terminal on the side opposite to the insertion tip side to the female connector,
    A curved bottom surface portion protruding toward the female connector side is provided on the female connector side of the body portion, and the curved bottom surface portion contacts an end portion of the cylindrical portion on the sealing body main surface side. The power semiconductor device according to claim 1, wherein the power semiconductor device is a power semiconductor device.
  7. 　前記メス型コネクタは、前記封止体の主面である封止体主面の側に前記貫通孔の径よりも大きく形成された主面開口部と、前記主面開口部よりも前記回路面側に、前記貫通孔と同心で前記貫通孔と同じ径に形成された第一の筒状部と、前記第一の筒状部よりも前記回路面側に設けられると共に一部が前記貫通孔と同じ径を有する第二の筒状部を備え、
    前記プレスフィット端子は、前記メス型コネクタへの挿入先端側と反対側に前記コネクタ挿入端子の幅よりも大きな胴体部を有し、
    前記胴体部における前記回路面側の胴体部底面が、前記主面開口部における前記回路面側の主面開口部底面に接触していることを特徴とする請求項１から４のいずれか１項に記載の電力用半導体装置。     The female connector includes a main surface opening formed larger than the diameter of the through hole on the sealing body main surface side which is a main surface of the sealing body, and the circuit surface than the main surface opening. A first cylindrical portion that is concentric with the through-hole and has the same diameter as the through-hole, and is provided closer to the circuit surface than the first cylindrical portion, and a part thereof is the through-hole A second cylindrical portion having the same diameter as
    The press-fit terminal has a body portion larger than the width of the connector insertion terminal on the side opposite to the insertion tip side to the female connector,
    5. The body body bottom surface on the circuit surface side in the body portion is in contact with a bottom surface opening surface on the circuit surface side in the main surface opening portion. The power semiconductor device according to the above.
  8. 　前記メス型コネクタは、前記封止体の主面である封止体主面の側に前記貫通孔の径よりも大きく形成された主面開口部と、前記主面開口部よりも前記回路面側に、前記貫通孔と同心で前記貫通孔と同じ径に形成された第一の筒状部と、前記第一の筒状部よりも前記回路面側に設けられると共に一部が前記貫通孔と同じ径を有する第二の筒状部を備え、
    前記プレスフィット端子は、前記メス型コネクタへの挿入先端側と反対側に前記コネクタ挿入端子の幅よりも大きな胴体部を有し、
    前記胴体部における前記メス型コネクタ側に、前記メス型コネクタ側に突出した湾曲底面部が設けられており、前記湾曲底面部が前記第一の筒状部の前記封止体主面側の端部に接触していることを特徴とする請求項１から４のいずれか１項に記載の電力用半導体装置。     The female connector includes a main surface opening formed larger than the diameter of the through hole on the sealing body main surface side which is a main surface of the sealing body, and the circuit surface than the main surface opening. A first cylindrical portion that is concentric with the through-hole and has the same diameter as the through-hole, and is provided closer to the circuit surface than the first cylindrical portion, and a part thereof is the through-hole A second cylindrical portion having the same diameter as
    The press-fit terminal has a body portion larger than the width of the connector insertion terminal on the side opposite to the insertion tip side to the female connector,
    A curved bottom surface portion protruding toward the female connector side is provided on the female connector side of the body portion, and the curved bottom surface portion is an end of the first cylindrical portion on the sealing body main surface side. The power semiconductor device according to claim 1, wherein the power semiconductor device is in contact with a portion.
  9. 　前記プレスフィット端子は、前記胴体部に内側をくり抜かれた中抜き部が設けられたことを特徴とする請求項５または６に記載の電力用半導体装置。 The power semiconductor device according to claim 5 or 6, wherein the press-fit terminal is provided with a hollow portion hollowed out in the body portion.
  10. 　前記プレスフィット端子は、前記胴体部に内側をくり抜かれた中抜き部が設けられたことを特徴とする請求項７または８に記載の電力用半導体装置。 The power semiconductor device according to claim 7 or 8, wherein the press-fit terminal is provided with a hollow portion hollowed out inside the body portion.
  11. 　前記プレスフィット端子は、前記コネクタ挿入端子が板状に形成されており、
    前記メス型コネクタは、前記コネクタ挿入端子の板厚面に垂直な正面及び裏面に対向する、該メス型コネクタの前記側面の一部が、前記底に向かって狭くなっていることを特徴とする請求項１から４のいずれか１項に記載の電力用半導体装置。     In the press-fit terminal, the connector insertion terminal is formed in a plate shape,
    The female connector is characterized in that a part of the side surface of the female connector facing the front and back surfaces perpendicular to the plate thickness surface of the connector insertion terminal is narrowed toward the bottom. The power semiconductor device according to any one of claims 1 to 4.
  12. 　前記プレスフィット端子は、前記コネクタ挿入端子が板状に形成されており、
    前記メス型コネクタは、前記コネクタ挿入端子の板厚面に垂直な正面及び裏面に対向する、該メス型コネクタの前記側面の一部が、前記底に向かって狭くなっていることを特徴とする請求項７、８、１０のいずれか１項に記載の電力用半導体装置。     In the press-fit terminal, the connector insertion terminal is formed in a plate shape,
    The female connector is characterized in that a part of the side surface of the female connector facing the front and back surfaces perpendicular to the plate thickness surface of the connector insertion terminal is narrowed toward the bottom. The power semiconductor device according to any one of claims 7, 8, and 10.
  13. 　前記メス型コネクタは、前記底に前記リードパターンの貫通孔の径よりも狭い狭底部を有し、前記コネクタ挿入端子の前記アンカー部は、前記狭底部に固定されたことを特徴とする請求項１１記載の電力用半導体装置。 The female connector has a narrow bottom portion narrower than a diameter of a through hole of the lead pattern at the bottom, and the anchor portion of the connector insertion terminal is fixed to the narrow bottom portion. 11. The power semiconductor device according to 11.
  14. 　前記メス型コネクタは、前記底に前記リードパターンの貫通孔の径よりも狭い狭底部を有し、前記コネクタ挿入端子の前記アンカー部は、前記狭底部に固定されたことを特徴とする請求項１２記載の電力用半導体装置。 The female connector has a narrow bottom portion narrower than a diameter of a through hole of the lead pattern at the bottom, and the anchor portion of the connector insertion terminal is fixed to the narrow bottom portion. 12. The power semiconductor device according to 12.
  15. 　前記メス型コネクタは、前記主面開口部における前記封止体の主面側にテーパ形状に形成された表面テーパ部を有することを特徴とする請求項５から１０のいずれか１項に記載の電力用半導体装置。 The said female connector has the surface taper part formed in the taper shape in the main surface side of the said sealing body in the said main surface opening part, The any one of Claim 5 to 10 characterized by the above-mentioned. Power semiconductor device.
  16. 　前記メス型コネクタは、前記主面開口部における前記封止体の主面側にテーパ形状に形成された表面テーパ部を有することを特徴とする請求項１２または１４に記載の電力用半導体装置。 15. The power semiconductor device according to claim 12, wherein the female connector includes a surface tapered portion formed in a tapered shape on a main surface side of the sealing body in the main surface opening.
  17. 　前記メス型コネクタは、該メス型コネクタの前記底と前記側面とがテーパ形状を有する底面テーパ部により接続されたことを特徴とする請求項１から１０、１５のいずれか１項に記載の電力用半導体装置。 The electric power according to any one of claims 1 to 10, wherein the female connector is connected to the bottom and the side surface of the female connector by a bottom taper portion having a tapered shape. Semiconductor device.
  18. 　前記メス型コネクタは、該メス型コネクタの前記底に円形状の底面円形部を有することを特徴とする請求項１から１０、１５のいずれか１項に記載の電力用半導体装置。 The power semiconductor device according to claim 1, wherein the female connector has a circular bottom circular portion at the bottom of the female connector.
  19. 　前記電力用半導体素子は、ワイドバンドギャップ半導体材料により形成されていることを特徴とする請求項１から１８のいずれか１項に記載の電力用半導体装置。 19. The power semiconductor device according to claim 1, wherein the power semiconductor element is formed of a wide band gap semiconductor material.
  20. 　前記ワイドバンドギャップ半導体材料は、炭化珪素、窒化ガリウム系材料、またはダイヤモンドのうちのいずれかであることを特徴とする請求項１９記載の電力用半導体装置。 20. The power semiconductor device according to claim 19, wherein the wide band gap semiconductor material is one of silicon carbide, gallium nitride-based material, and diamond.
PCT/JP2016/063703 2015-05-21 2016-05-09 Semiconductor device for power WO2016185920A1 (en)

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DE112016002302.2T DE112016002302B4 (en) 2015-05-21 2016-05-09 power semiconductor device
JP2017519118A JP6316504B2 (en) 2015-05-21 2016-05-09 Power semiconductor device
CN201680009619.6A CN107210279B (en) 2015-05-21 2016-05-09 Power semiconductor device

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018131187A (en) * 2017-02-17 2018-08-23 日信工業株式会社 Electric component assembly and vehicle brake fluid pressure control device
JP2019140315A (en) * 2018-02-14 2019-08-22 三菱電機株式会社 Power module and semiconductor device
JP2019186350A (en) * 2018-04-09 2019-10-24 三菱電機株式会社 Semiconductor device
CN113843371A (en) * 2021-09-29 2021-12-28 安徽世林照明股份有限公司 Flattening process and device for pins of electronic component
JPWO2022013936A1 (en) * 2020-07-14 2022-01-20
US20220208666A1 (en) * 2020-10-22 2022-06-30 Semiconductor Components Industries, Llc Power module
US11539150B2 (en) 2018-11-19 2022-12-27 Huawei Technologies Co., Ltd. Pin, pin combination structure, package body, and method for manufacturing package body

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10790220B2 (en) * 2018-10-18 2020-09-29 Nxp B.V. Press-fit semiconductor device
JP6634655B1 (en) * 2019-03-28 2020-01-22 株式会社ケーヒン Power module
DE102020111526B3 (en) * 2020-04-28 2021-06-02 Semikron Elektronik Gmbh & Co. Kg Power semiconductor module with press-fit contact element
EP3989274A1 (en) * 2020-10-23 2022-04-27 SwissSEM Technologies AG Power module
US11901273B2 (en) 2021-07-26 2024-02-13 Infineon Technologies Ag Power module with press-fit contacts

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005056805A (en) * 2003-08-07 2005-03-03 Yazaki Corp Connection terminal
JP2006210230A (en) * 2005-01-31 2006-08-10 Nissan Motor Co Ltd Press-fit terminal, its fixing method, and method of manufacturing circuit board device using press-fit terminal
JP2012151019A (en) * 2011-01-20 2012-08-09 Mitsubishi Electric Corp Semiconductor device for power, printed wiring board and their connection mechanisms
JP2013152966A (en) * 2012-01-24 2013-08-08 Mitsubishi Electric Corp Power semiconductor device, and method of manufacturing the same
JP2014049582A (en) * 2012-08-31 2014-03-17 Mitsubishi Electric Corp Semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11219738A (en) 1998-02-02 1999-08-10 Sumitomo Wiring Syst Ltd Wiring board assembly and manufacture of wiring board assembly
JP4295384B2 (en) * 1999-03-08 2009-07-15 富士通コンポーネント株式会社 connector
JP4230725B2 (en) 2002-07-08 2009-02-25 株式会社カワグチマック工業 Insulating refractory material composition and insulating refractory material using the same
JP2004350377A (en) * 2003-05-21 2004-12-09 Sumitomo Wiring Syst Ltd Circuit body and electric joint box for automobile containing the circuit body
JP4569473B2 (en) 2006-01-04 2010-10-27 株式会社日立製作所 Resin-encapsulated power semiconductor module
KR101418197B1 (en) * 2010-04-07 2014-07-09 미쓰비시덴키 가부시키가이샤 Press fit terminal and semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005056805A (en) * 2003-08-07 2005-03-03 Yazaki Corp Connection terminal
JP2006210230A (en) * 2005-01-31 2006-08-10 Nissan Motor Co Ltd Press-fit terminal, its fixing method, and method of manufacturing circuit board device using press-fit terminal
JP2012151019A (en) * 2011-01-20 2012-08-09 Mitsubishi Electric Corp Semiconductor device for power, printed wiring board and their connection mechanisms
JP2013152966A (en) * 2012-01-24 2013-08-08 Mitsubishi Electric Corp Power semiconductor device, and method of manufacturing the same
JP2014049582A (en) * 2012-08-31 2014-03-17 Mitsubishi Electric Corp Semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018131187A (en) * 2017-02-17 2018-08-23 日信工業株式会社 Electric component assembly and vehicle brake fluid pressure control device
JP2019140315A (en) * 2018-02-14 2019-08-22 三菱電機株式会社 Power module and semiconductor device
JP7031347B2 (en) 2018-02-14 2022-03-08 三菱電機株式会社 Power modules and semiconductor devices
JP2019186350A (en) * 2018-04-09 2019-10-24 三菱電機株式会社 Semiconductor device
US11539150B2 (en) 2018-11-19 2022-12-27 Huawei Technologies Co., Ltd. Pin, pin combination structure, package body, and method for manufacturing package body
JPWO2022013936A1 (en) * 2020-07-14 2022-01-20
WO2022013936A1 (en) * 2020-07-14 2022-01-20 三菱電機株式会社 Method for manufacturing semiconductor device
JP7199604B2 (en) 2020-07-14 2023-01-05 三菱電機株式会社 Semiconductor device manufacturing method
US20220208666A1 (en) * 2020-10-22 2022-06-30 Semiconductor Components Industries, Llc Power module
US11894292B2 (en) * 2020-10-22 2024-02-06 Semiconductor Components Industries, Llc Power module
CN113843371A (en) * 2021-09-29 2021-12-28 安徽世林照明股份有限公司 Flattening process and device for pins of electronic component
CN113843371B (en) * 2021-09-29 2023-06-13 安徽世林照明股份有限公司 Electronic element pin flattening process and equipment thereof

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