CN107210279B - Power semiconductor device - Google Patents

Power semiconductor device Download PDF

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Publication number
CN107210279B
CN107210279B CN201680009619.6A CN201680009619A CN107210279B CN 107210279 B CN107210279 B CN 107210279B CN 201680009619 A CN201680009619 A CN 201680009619A CN 107210279 B CN107210279 B CN 107210279B
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China
Prior art keywords
power semiconductor
semiconductor device
press
female type
type connectors
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Application number
CN201680009619.6A
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Chinese (zh)
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CN107210279A (en
Inventor
川岛裕史
藤野纯司
江草稔
中川信也
田中智典
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN107210279A publication Critical patent/CN107210279A/en
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Publication of CN107210279B publication Critical patent/CN107210279B/en
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

Purpose is to improve the retentivity of press-fit terminals and connector to obtain small-sized and high reliablity power semiconductor device.Power semiconductor device (1) of the invention has: multiple lead patterns (23,24,25), one end is connect with any circuit block in the circuit block including power semiconductor element (8), and has through hole in the predetermined position of another side；Seal (4), potted circuit component and formed；Female type connectors (5) are formed from the interarea (4f) of seal (4) to circuit face (6f)；And press-fit terminals (2), there is connector to be inserted into terminal, connector insertion terminal is fixed on female type connectors.Connector insertion terminal includes anchor portion, is set to the insertion front end side to female type connectors, is fixed on the bottom and side of female type connectors；And press-fitting portion, it is set to the insertion depth part more shallow than anchor portion, is connect with the through hole of lead pattern.

Description

Power semiconductor device
Technical field
The present invention relates to structures and terminal shape that the interarea in packaging body forms the power semiconductor device of terminal.
Background technique
In semiconductor devices, power semiconductor device be also used for from commercial plant to civilian household electrical appliances/information is whole The control of the main electric power (power) of the extensive equipment at end, especially requires high reliability in transporting equipment etc..In recent years, especially Be as can make high current flow through and can also carry out high temperature movement wide bandgap semiconductor materials silicon carbide (SiC) conduct Exploitation is carried out instead of the semiconductor material of silicon (Si).On the other hand, it is also required to reply high current and is easily achieved small-sized Packaging body (seal) mode of change.
Therefore, it is proposed to a kind of power semiconductor device, in the power semiconductor device, in order to reduce setting face Product, instead of forming terminal (for example, ginseng in the interarea of seal in the way of the side of the seal of resin formation terminal According to patent document 1.).In addition, though being not formed with the seal based on resin, but propose following wiring plate assembly And electric connection box: in the fixed multiple busbars with through hole in the predetermined position for opening porose insulating substrate, make busbar with And the hole connection of insulating substrate, male terminal is inserted into, thus make on interarea terminal it is prominent (for example, referring to patent document 2 or 3.).In addition, in patent document 4, a kind of power semiconductor device is proposed, and in the power semiconductor device, electric power It is sealed by resin with semiconductor element, the interarea of seal is provided with the connector inserted with press-fit terminals.Patent document 4 Power semiconductor device is formed at the multiple lead patterns connecting with power semiconductor element and circuit block and passes through Through-hole, through hole are connected to connector.Each lead pattern is configured at least link in the lead frame of one before sealing, institute Can accurately configure connector.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2007-184315 bulletin (the 0021st, 0029 section, Fig. 1, Fig. 3)
Patent document 2: Japanese Unexamined Patent Publication 11-219738 bulletin (the 0010th~0016 section, Fig. 1, Fig. 2)
Patent document 3: Japanese Unexamined Patent Publication 2004-350377 bulletin (the 0015th~0027 section, Fig. 1, Fig. 2)
Patent document 4: Japanese Unexamined Patent Publication 2013-152966 bulletin (the 0033rd~0038 section, Fig. 1)
Summary of the invention
But in the power semiconductor device as described in Patent Documents 1 to 3, need multiple terminal positions in exhausted Edge substrate and engage, it is difficult to keep the position precision between terminal.Therefore, it is possible to due to being applied in action process to joint portion etc. Remaining power is added, incurs the deterioration of electrical connection section, makes reliability decrease.In addition, in the power semiconductor device of patent document 4 In, when press-fit terminals are inserted into connector, the press-fitting portion compressive deformation of the press-fit terminals bigger than the diameter of connector, thus Press-fit terminals are only kept contacting with the junction of lead pattern, so depending on the radical of terminal, it is contemplated that for coming from External strong vibration retentivity is insufficient.Therefore, when in use or when the strong stress such as vibration when installation is applied to press-fit terminals, Also sometimes for enough reliabilities.
The present invention be it is completed to solve the above problems, its object is to improve the holding of press-fit terminals and connector Power obtains small-sized and high reliablity power semiconductor device.
Power semiconductor device of the invention is characterized in that having: power semiconductor element, with circuit substrate Circuit face bonding；Multiple lead patterns, the one end of each lead pattern respectively with the setting including power semiconductor element There is perforation in the predetermined position of another side in any circuit block connection of the circuit block of circuit surface side, and respectively Hole；Seal is formed as potted circuit component and circuit face and has the interarea substantially parallel with circuit face；Female type connectors, It is corresponding with each through hole of multiple lead patterns, it to circuit face is formed from the interarea of seal；And press-fit terminals, have Connector is inserted into terminal, and connector insertion terminal is fixed on female type connectors.Connector insertion terminal includes anchor portion, is arranged In the insertion front end side to female type connectors, and it is fixed on the bottom and side of female type connectors；And press-fitting portion, it is set to The insertion depth part more shallow than anchor portion, and connect with the through hole of lead pattern.
In power semiconductor device of the invention, due to press-fit terminals have be fixed on female type connectors bottom and The anchor portion of side and the press-fitting portion being connect with the through hole of lead pattern, so can be improved the holding of press-fit terminals and connector Power can minimize and improve reliability.
Detailed description of the invention
Fig. 1 is the top view of the power semiconductor device of embodiments of the present invention 1.
Fig. 2 is the cross-sectional view of the power semiconductor device of Fig. 1.
Fig. 3 is the top view for the lead frame for manufacturing the power semiconductor device of Fig. 1.
Fig. 4 is the section for the connector portion for showing Fig. 1 and the figure of press-fit terminals.
Fig. 5 is the figure for showing the press-fit terminals of Fig. 1.
Fig. 6 is the figure for showing the section of connector portion of Fig. 1.
Fig. 7 is the figure of the module of the manufacture midway for the power semiconductor device for showing Fig. 1.
Fig. 8 is the figure of the manufacturing process of the power semiconductor device of explanatory diagram 1.
Fig. 9 is the figure of the manufacturing process of the power semiconductor device of explanatory diagram 1.
Figure 10 is the figure of another connector portion for showing embodiment 1 and the pin of mold.
Figure 11 is the figure for showing the connector portion and press-fit terminals of Figure 10.
Figure 12 is the figure of the another connector portion for showing embodiment 1 and the pin of mold.
Figure 13 is the figure for showing the connector portion and press-fit terminals of Figure 12.
Figure 14 is the figure for showing the press-fit terminals of embodiments of the present invention 2.
Figure 15 is the figure for showing the press-fit terminals and connector portion of Figure 14.
Figure 16 is the figure of the reaction force of the press-fit terminals of explanatory diagram 14.
Figure 17 is the figure for showing another press-fit terminals of embodiments of the present invention 2.
Figure 18 is the figure for showing the press-fit terminals and connector portion of Figure 17.
Figure 19 is the figure for showing the press-fit terminals of embodiments of the present invention 3.
Figure 20 is the figure for showing the press-fit terminals and connector portion of Figure 19.
Figure 21 is the figure of the angle corrective action of the substrate insertion terminal of the press-fit terminals of explanatory diagram 19.
Figure 22 is the figure of the angle corrective action of the substrate insertion terminal of the press-fit terminals of explanatory diagram 19.
Figure 23 is the figure for showing the press-fit terminals of embodiments of the present invention 4.
Figure 24 is the figure for showing the press-fit terminals and the first connector portion of Figure 23.
Figure 25 is the first connector portion and press-fit terminals and the figure seen of Figure 24 from the direction B.
Figure 26 is the first connector portion of Figure 24 from the main surface side of seal and the figure seen.
Figure 27 is the figure for showing the press-fit terminals and the second connector portion of Figure 23.
Figure 28 is the second connector portion and press-fit terminals and the figure seen of Figure 27 from the direction B.
Figure 29 is the second connector portion of Figure 27 from the main surface side of seal and the figure seen.
(symbol description)
1: power semiconductor device；2: press-fit terminals；2a: connector is inserted into terminal；2n: anchor portion；2p: press-fitting portion；2s: Straight line portion (trunk)；2sb: straight line portion bottom surface (trunk bottom surface)；2t: protrusion；2nh: through hole (anchor portion through hole)；3: Circuit substrate；4: seal；4f: interarea；5: connector portion (female type connectors)；5b: bottom (bottom)；5c: terminal fixing part is (main Face opening portion)；5cb: terminal fixing part bottom surface (interarea opening portion bottom surface)；5hu: cylindrical portion；5hd: cylindrical portion (side)；5st: Surface tapering；5bt: bottom surface tapering；5bc: bottom surface rounded portions；6f: circuit face；8: power semiconductor element；21h: through hole； 23: lead pattern；24: lead pattern；25: lead pattern；40: trunk；41: curved bottom surface portion；42: in lead to portion；43,43a, 43b, 43c, 43d: narrow bottom；44: the first upper openings (interarea opening portion)；Wf: width；Wa: width.
Specific embodiment
Embodiment 1.
Fig. 1 is the top view of the power semiconductor device of embodiments of the present invention 1, and Fig. 2 is the electric power of Fig. 1 with partly leading The cross-sectional view of body device.Fig. 3 is the top view for the lead frame for manufacturing the power semiconductor device of Fig. 1, and Fig. 4 is to show The section of the connector portion of Fig. 1 and the figure of press-fit terminals.Fig. 5 is the figure for showing the press-fit terminals of Fig. 1, and Fig. 6 shows Fig. 1 The figure of the section of connector portion.The cross-sectional view of Fig. 2 is the cutting plane of the line A-A of Fig. 1, is the length of power semiconductor device Sectional view.
Firstly, illustrating the structure of power semiconductor device 1.As shown in Figure 1 and Figure 2, the electric power of present embodiment 1 is with partly Conductor device 1 has: external electrode (such as press-fit terminals 2), for carrying out and connecting the external base of power semiconductor device 1 The electrical connection of plate and/or external circuit；And connector portion 5, including the circuit block including power semiconductor element 8 etc. Substantially rectangular packaging body (seal) 4 the side interarea 4f as being inserted into press-fit terminals 2 female type connectors play function Energy.In fig. 1 it is shown that configuring 8 connector portions 5 and in each connector portion 5 inserted with press-fitting in the interarea 4f of seal 4 The example of terminal 2.Press-fit terminals 2 are, for example, the alloy comprising copper.
As shown in Fig. 2, in the predetermined position on the surface (circuit face 6f) for the radiator 6 for being used as circuit substrate, as circuit The switch element 11 and rectifier cell 12 of component are joined to rear electrode side using solder 7.Switch element 11, rectifier cell 12 For power semiconductor element 8.The e.g. IGBT of rectifier cell 12 (Insulated Gate Bipolar Transistor, absolutely Edge grid bipolar junction transistor).Switch element 11 is, for example, FwDi (Free Wheeling Diode, freewheeling diode).Moreover, Lead pattern 23 is engaged using solder 7 with the surface electrode of the main electric power of power semiconductor element 8, the grid of switch element 11 Electrode is electrically connected using gold thread 9 with lead pattern 24.In addition, on the surface of switch element 11, rectifier cell 12, in aluminum metallization Implement gold metallization on electrode, is able to carry out soldering.In addition, in order to simplified and not shown, but be additionally provided on circuit face 6f Circuit block other than power semiconductor element 8, they also with any lead pattern in lead pattern 23, lead pattern 24 Electrical connection.
As shown in figure 3, lead frame 21 is to carry out punching press to the copper sheet of plate thickness 1mm and formed, 23,4, lead pattern Lead pattern 24 and lead pattern 25 link via linking part 26 and lead frame 22.As shown in Fig. 2, additional step height difference, with Decline the part for each lead pattern being located on radiator 6 to 6 side of radiator than the part in addition to the part.Such as Fig. 3 institute Show, a part of lead pattern 23, lead pattern 24, lead pattern 25 is provided with the through hole 21h that diameter is 2mm, this is passed through Through-hole 21h is used to form connector portion 5 in predetermined position.The inside diameter 21hi of through hole 21h is the side for penetrating through each lead pattern Face.Moreover, until the process of the finishing in the manufacturing method of aftermentioned power semiconductor device 1, each lead pattern with draw Wire frame 22 links, and is integrally formed as lead frame 21.That is, being concatenated in lead frame 21 in each lead pattern In the state of, the through hole 21h formed for each lead pattern can accurately maintain respective positions relationship.Although in addition, It is not shown in Fig. 2, but lead pattern 25 is engaged using solder 7 with the circuit face 6f of radiator 6, thus and power semiconductor The rear electrode of element 8 is electrically connected.
Even if in addition, the electrode and the external wiring part being attached to power semiconductor element 8 are not lead frames The lead pattern of frame is also possible to the lead pattern of glass epoxy substrate, even if through hole is configured to be substituted for glass ring The through-hole of epoxy resin-based plate is also set up.
As shown in Fig. 2, being formed with the back side of the radiator 6 of power circuit in the side circuit face 6f, attached across insulating layer 14 There is copper foil 15, the region in addition to the back portion of copper foil 15 is sealed.With with to be formed by circuit face 6f substantially parallel The whole seal 4 of the resin of interarea 4f is in rectangular plate-like.The exposed division of the copper foil 15 exposed from seal 4 is used to use in electric power After semiconductor device 1 is completed, coolers such as fin (fin) are installed after being installed on external substrate.Moreover, in seal 4 Interarea 4f is formed with connector portion 5 for each through hole 21h, which is formed as recessed from interarea 4f to circuit face 6f It falls into, and is connected to corresponding through hole 21h, functioned as the female type connectors for being inserted into press-fit terminals 2.
As shown in figs. 4 and 6, the terminal that it is 3mm in the interarea 4f setting diameter d1 of seal 4 that connector portion 5, which is formed as, is solid Determine portion (interarea opening portion) 5c, therefrom passes through through hole 21h by way of by the cylindrical portion 5hu that diameter d2 is 2mm, and then form tubular Portion 5hd reaches bottom 5b.Terminal fixing part 5c is the cylindrical shape that diameter d1 is 3mm, and cylindrical portion 5hu, 5hd is that diameter d2 is 2mm Cylindrical shape.The inside diameter 21hi of through hole 21h is in the internal cylindrical shape exposed.That is, connector portion 5 be in by with one heart and Two different cylinder-shaped two cylindrical section shapes constituted of diameter.The example of the depth dimensions of connector portion 5 is shown.Such as from interarea Depth l4 until 4f to bottom 5b is 7mm, terminal fixing part bottom surface (the interarea opening portion from interarea 4f to terminal fixing part 5c Bottom surface) the depth l1 until 5cb is 1mm, the depth l2 of cylindrical portion 5hu is 2mm, and the lead pattern 23 as current-carrying part passes through The depth tl of through-hole 21h is 1mm, and the depth l3 of cylindrical portion 5hd is 3mm.Extension 5e until from cylindrical portion 5hu to bottom 5b Depth (extension depth) le be 6mm.The depth tl of through hole 21h is also the pattern plate thickness of lead pattern 23.In Fig. 4, Fig. 6 In, the connector portion 5 in lead pattern 23 is shown, but the connector portion 5 in lead pattern 24,25 is also identical.In Fig. 4 In, the connector portion 5 that shows connector portion 5 inserted with press-fit terminals 2 and be not inserted into.
Next, using the shape of Fig. 4, Fig. 5 press-fit terminals 2 for illustrating to be inserted into connector portion 5.Press-fit terminals 2 include Straight line portion (trunk) 2s, connector insertion terminal 2a and substrate are inserted into terminal 2b, insert the connector into terminal 2a and are inserted into Connector portion 5.The width of the width direction of the press-fit terminals 2 of straight line portion 2s is Ws, is straight on the length direction of press-fit terminals 2 Wire shaped.It includes the press-fitting portion 2p that width is Wf and the anchor portion 2n that width is Wa that connector, which is inserted into terminal 2a,.The thickness of press-fit terminals 2 As long as degree ts does not twist when press-fit terminals 2 are inserted into connector portion 5 or the thickness of warpage.Connector insertion Terminal 2a, anchor portion 2n, substrate insertion terminal 2b are respectively formed as the frame shape shape that inside is dug through.
When inserting the connector into terminal 2a as shown in Figure 4 and being inserted into connector portion 5, the straight line portion 2s and connector of wide Ws The terminal fixing part bottom surface 5cb of the terminal fixing part 5c in portion 5 is contacted, and the press-fit terminals 2 on the depth direction of connector portion 5 are inserted Enter position to be fixed.The diameter d1 of terminal fixing part 5c is preferably matchingly designed with the width Ws of straight line portion 2s.
The width Wf ratio of press-fitting portion 2p is formed in the diameter d2 of the inside diameter 21hi at the through hole 21h of each lead pattern Greatly.Therefore, when press-fitting portion 2p is inserted into connector portion 5, the diameter d2 of press-fitting portion 2p and the inside diameter 21hi as conductor Correspondingly compressive deformation applies the pressure more than making a reservation for since it repels, thus and through hole between inside diameter 21hi The inside diameter 21hi of 21h is engaged and is fixed.
The width Wa of anchor portion 2n is smaller than the diameter d2 of inside diameter 21hi.Therefore, when being inserted into press-fit terminals 2, anchor portion 2n It is contacted with the bottom 5b of connector portion 5, and occurs to be plastically deformed and contact with cylindrical portion 5hd.And then by by press-fit terminals 2 into The indentation of one step, thus the 2n compressive deformation of anchor portion, due to the repulsive force from cylindrical portion 5hd, anchor portion 2n is fixed in connector portion 5 cylindrical portion 5hd.
Due to needing to make the 2n compressive deformation of anchor portion before fixed press-fitting portion 2p, so needing to make the straight line from straight line portion 2s Length, that is, connector until portion bottom surface (trunk bottom surface) 2sb to the lower surface of anchor portion 2n is inserted into terminal length la ratio from connection Depth, that is, extension 5e depth le long until the cylindrical portion 5hu to bottom 5b in device portion 5.
In addition, as long as the press-fit terminals 2 before insertion keep connector insertion terminal length la than the extension of connector portion 5 The relationship of depth le long, then the depth of the cylindrical portion 5hd of anchor portion 2n contact is also possible to 3mm or less or 3mm or more.
In addition, the diameter d2 being formed at the inside diameter 21hi of the through hole 21h of lead pattern 23,24,25 is also possible to Value other than 2mm.As long as the diameter d2 and its depth tl at the inside diameter 21hi of through hole 21h are corresponding with following situation straight Diameter and depth: when press-fit terminals 2 are inserted into connector portion 5, press-fitting portion 2p is with the inside diameter 21hi's as conductor Diameter d2 correspondingly compressive deformation applies the pressure more than making a reservation for since it repels between inside diameter 21hi.
Then, Fig. 2, Fig. 7~Fig. 9 is used to illustrate to be provided in the interarea 4f of seal 4 as the parent form of terminal insertion The manufacturing method of the power semiconductor device 1 of the connector portion 5 of connector.In addition, being set as lead frame 21 certainly before process Body is completed.Fig. 7 is the figure of the module of the manufacture midway for the power semiconductor device for showing Fig. 1.Fig. 8 and Fig. 9 is explanation The figure of the manufacturing process of the power semiconductor device of Fig. 1.Fig. 8 is in order to the mould for being formed with semiconductor circuit in circuit face 6f Block 1M is sealed and is set to module 1M the cross-sectional view of the state of mold 90, and Fig. 9 is drawn after and then sealing The cross-sectional view of power semiconductor device 1 before the finishing of wire frame 21.In addition, Fig. 7~Fig. 9 shows the A-A with Fig. 1 The corresponding cutting plane of line.
Firstly, as shown in fig. 7, comprising utilizing solder 7 by power semiconductor element 8 (switch element 11, rectifier cell 12) rear electrode (cathode electrode, collector electrode) is joined to the pre-determined bit on the surface of the radiator 6 as circuit face 6f It sets, carries out the setting of circuit block (not shown).Then, each lead pattern and circuit block of following lead frame 21 are carried out Electrical connection: the electricity of the main electric power on each surface of one end and power semiconductor element 8 of the lead pattern 23 of lead frame 21 The engagement of pole (anode electrode, emitter electrode) carried out using solder 7, one end of the lead pattern 25 of lead frame 21 and electricity The lead of the engagement carried out using solder 7 in the predetermined position of road surface 6f and the gate electrode of switch element 11 and lead frame 21 The electrical connection using gold thread 9 of pattern 24.Wiring connection as a result, terminates, and forms module 1M, and module 1M has composition and is based on opening Close the power circuit of the semiconductor switch of element 11 and rectifier cell 12.
In this way, as shown in figure 8, the 90 (upper mold of mold of transfer modling is arranged in the module 1M that will be provided with power circuit 91, lower mold 92) in, and make copper foil 15, insulating layer 14 thereunder.At this point, in the face of upper mold 91 with through hole 21h The corresponding pre-position in position configured with sleeve 91s and pin 91p, carry out position alignment (the extension (horizontal) direction in face) So that respectively pin 91p is inserted respectively into corresponding through hole 21h.Then, lead frame is clamped with upper mold 91 and lower mold 92 21 a part stretches out lead frame 22 to the external of mold 90, fastens mold 90.The module that horizontal direction is positioned as a result, 1M is also positioned in vertical direction, can accurately determine the relative position in the horizontal direction each through hole 21h and phase For the depth of interarea 4f.
In this way, when sealing resin to be injected into the sky in the mold 90 that the inside of mold 90 dimensionally positions module 1M Between and by transfer modling come when sealing, as shown in figure 9, be capable of forming seal 4, the electricity of 4 potted circuit face 6f of the seal Circuit unit, and there is the interarea 4f substantially parallel with circuit face 6f.When sealing resin to be injected into mold 90, penetrating through Hole 21h was adjusted diameter inserted with pin 91p, pin 91p to be at least tightly attached to the inside diameter 21hi of through hole 21h.Therefore, Part inserted with pin 91p in seal 4 is formed as the connector being connected to from interarea 4f with the through hole 21h of each lead pattern The extension 5e in portion 5.In addition, the part inserted with sleeve 91s in seal 4 is formed as the terminal fixing part of connector portion 5 5c.Has extension 5e and terminal fixing part the 5c i.e. connector portion 5 of two cylindrical section shapes in this way, being formed.As a result, in each connection At device portion 5, the center of the through hole 21h as conductive part and terminal fixing part 5c, cylindrical portion 5hu, 5hd center without departing from ground Be formed as with one heart, so the external terminal as press-fit terminals 2 can be smoothly inserted into.
Next, removing the lead frame 22 of the lead frame 21 exposed from seal 4 as finishing process.Although manufacture In the side of seal 4, the cutting portion of linking part 26 as shown in Figure 2 is exposed but the substantially electricity that is encapsulated by seal 4 of circuit part Power semiconductor device 1.
When being inserted into press-fit terminals 2 to connector portion 5, anchor portion 2n first connects with the bottom 5b of connector portion 5 and compresses change Shape.Later, compression stress is generated between anchor portion 2n and the inner wall of cylindrical portion 5hd due to the deformation of anchor portion 2n, press-fit terminals 2 Anchor portion 2n is fixed on connector portion 5.Matchingly press-fitting portion 2p is fixed on the inside diameter 21hi of lead frame and is electrically connected with it It connects.
In this way, the power semiconductor device 1 of embodiment 1 is configured in interarea 4f is inserted into the more of press-fit terminals 2 A connector portion 5, so as to be installed as press-fit terminals 2 from the upper surface (interarea 4f) of power semiconductor device 1 External terminal can be such that power semiconductor device 1 minimizes, can reduce the mounting area installed to external substrate. Therefore, the device miniaturization for being equipped with power semiconductor device 1 can be made.
In turn, the power semiconductor device 1 of embodiment 1 is by will be based on the engagement of the compressive deformation of press-fit terminals 2 For the connection to connector portion 5, so as to the temperature lower than the previous terminal construction using soldering connection by terminal It is installed to connector portion 5.Thus, it is possible to add again without the solder 7 to the joint portion as power semiconductor element 8 Heat is allowed to melt again or assembles module with softening, and can be improved the reliability of solder-joint parts.
When manufacturing the power semiconductor device 1 of embodiment 1, the pin 91p and set for being set to upper mold 91 are utilized Cylinder 91s forms connector portion 5, so as to configure position of each connector portion 5 in interarea 4f as setting.Moreover mould The pin 91p of tool 90 is formed as being inserted into the through hole 21h being arranged in lead frame 21, so can using each connector portion 5 Make the center of through hole 21h functioned as conductive part and cylindrical portion 5hu, 5hd of resin and terminal fixing part 5c Center is consistent, eliminates the skew of the axis in connector portion 5.Therefore, can reduce be inserted into connector portion 5 external terminal ( In this example be press-fit terminals 2) position or angle deviation, successfully link with external equipment.Alternatively, can will be set to outer Multiple terminals of portion's equipment are smoothly inserted into each connector portion 5.As a result, will not when being installed to equipment or installation after and It is extra such as the excessive repulsive force that the unilateral wall surface in connector portion 5 generates to apply when the connection of terminal or after connection Power.Therefore, it can reduce the stress to electrical connection section, circuit block etc. to prevent from deteriorating, can be improved power semiconductor dress Set 1 reliability.
The power semiconductor device 1 of embodiment 1 does not need the installation to external substrate by using press-fit terminals 2 Brazing equipment can be installed by easy Manual press, so equipment cost can be greatly reduced.In addition, In the power semiconductor device 1 of embodiment 1, even bigger printed base plate is also able to use press-fit terminals, (substrate is inserted Enter terminal 2b) and be easily installed, and technological know-how (know how) etc. as soldering is not needed yet, so workability is big Improve to width.Especially in power semiconductor device, due to flowing through high current, the area of section of terminal is than general semiconductor Device is big, and when being brazed, the temperature of terminal is difficult to rise, it is difficult to make its stabilization.But the electric power of embodiment 1 is with partly leading Body device 1 is due to using press-fit terminals 2, so easily pressed the area of section of press-fit terminals 2 changes, so as to Installation, therefore, yield rate improve.
In addition, the press-fit terminals 2 being connect with external substrate substrate insertion terminal 2b either soldering terminal, It can be spring terminal etc..That is, substrate insertion terminal can be deformed into various sides according to demand from the user Formula.
Straight line portion bottom surface 2sb in the power semiconductor device 1 of embodiment 1, in the straight line portion 2s of press-fit terminals 2 It contacts with the terminal fixing part bottom surface 5cb in the terminal fixing part 5c of connector portion 5, is connected so that it is determined that press-fit terminals 2 are opposite The position of the depth direction in device portion 5.Thereby, it is possible to meet the whole prominent length of the press-fit terminals 2 in power semiconductor device 1 Degree, so link position is consistent when installing external substrate in the power semiconductor device 1 of embodiment 1, so engagement Quality is stablized.In turn, in the power semiconductor device 1 of embodiment 1, by the diameter d1 and pressure that make terminal fixing part 5c The straight line portion 2s of matching terminal 2 matches, so that even if press-fit terminals 2 or so (are hung down with direction of insertion after being inserted into press-fit terminals 2 It directly) waves, the side of terminal fixing part 5c becomes the brake of vibration, to can also reduce the load to press-fitting portion 2p.
In addition, passing through the press-fit terminals for making to connect with connector portion 5 in the power semiconductor device 1 of embodiment 1 2 have anchor portion 2n, are fixed in press-fitting portion 2p and anchor portion the two positions 2n.Thus in power semiconductor device 1 from outside When being vibrated, other than keeping press-fitting portion 2p, anchor portion 2n also keeps press-fit terminals 2, so the electricity of embodiment 1 Power semiconductor device 1 can be obtained for vibration or impulse machine, electrically high reliability.
In the case where the exposed surface of copper foil 15 installs fin, fin is pressed into power semiconductor device 1 and is pacified Dress.The anchor portion 2n of the power semiconductor device 1 of embodiment 1 is fixed on the bottom 5b of connector portion 5, so in installation fin Even if when stress via module 1M and in press-fitting portion 2p by depth direction (extending direction of connector portion 5), due to anchor portion 2n support connector portion 5, so press-fitting portion 2p is without departing from quality when outside fin is installed is stablized.
In addition, the layer between each lead pattern and interarea 4f with resin is not necessarily required, each lead pattern can also be made Face terminal fixing part 5c lower surface expose, the diameter of the cylindrical portion 5hu of connector portion 5 is set as and terminal fixing part 5c Diameter it is identical.Connector portion 5 in this case is also two cylindrical section shapes.The straight line portion bottom of the straight line portion 2s of press-fit terminals 2 Face 2sb and each lead pattern contacts, so as to the protrusion length for keeping the press-fit terminals 2 in power semiconductor device 1 whole Matching.
Alternatively, it is also possible to which the diameter of the terminal fixing part 5c of connector portion 5 is set as and cylindrical portion 5hu and each lead figure The diameter of the through hole 21h of case is identical.That is, terminal fixing part 5c becomes the straight of the straight line portion 2s from interarea 4f to press-fit terminals 2 Part until part locating for line portion bottom surface 2sb.The not instead of two cylindrical section shapes of connector portion 5 in this case, usually Cylindrical shape.In this case, it is not specified by the terminal fixing part bottom surface 5cb of the intubating length of press-fit terminals 2, so utilizing The device of press-fit terminals 2 is pressed to adjust the intubating length of press-fit terminals 2.According to the increasing of the reaction force from press-fit terminals 2 Add state or interarea 4f at a distance from the straight line portion upper surface 2s or the end of substrate insertion terminal 2b to adjust press-fit terminals 2 Intubating length.
Alternatively, it is also possible to which in the front end of the pin 91p for the upper mold 91 for being set to mold 90, setting is implemented as shown in Figure 10 The pin tapering 91t being tapered.Figure 10 is the figure of another connector portion for showing embodiment 1 and the pin of mold, and Figure 11 is to show The connector portion of Figure 10 and the figure of press-fit terminals.Figure 10 (a) shows the connector that resin is injected into the state of mold 90 Portion 5, Figure 10 (b) are shown from the connector portion 5 after the taking-up of mold 90.That is, from the state of Figure 10 (a) as Figure 10's (b) State.The front end of pin 91p (the first pin) shown in Fig. 8 is cylindrical shape, but before pin 91p shown in Figure 10 (a) (the second pin) End is the frustum of a cone being made of pin bottom surface sections 91b and pin tapering 91t.
By using the upper mold 91 for having the pin 91p for being provided with pin tapering 91t, the front end of 91p is sold as shown in Figure 10 (b) Shape is transferred into the Bottom Shape of the bottom 5b of connector portion 5.That is, the Bottom Shape of the bottom 5b of connector portion 5 is by flat bottom The frustum of a cone that face and bottom surface tapering 5bt are constituted.In this way, having the electricity that bottom surface tapering 5bt is arranged at the connector portion 5 of front end Power with semiconductor device 1 in the anchor portion 2n compressive deformation of press-fit terminals 2, be easy to as shown in figure 11 be used to form seal 4 Sealing resin contact, the contact area of anchor portion 2n and connector portion 5 increases, so can be improved the retentivity of press-fit terminals 2.
Alternatively, it is also possible to which there is circle in the front end setting of the pin 91p for the upper mold 91 for being set to mold 90 as shown in figure 12 The rounded portions 91c of shape.Figure 12 is the figure of the another connector portion for showing embodiment 1 and the pin of mold, and Figure 13 is to show figure 12 connector portion and the figure of press-fit terminals.Figure 12 (a) shows the connector portion that resin is injected into the state of mold 90 5, Figure 12 (b) show from the connector portion 5 after the taking-up of mold 90.That is, becoming the shape of Figure 12 (b) from the state of Figure 12 (a) State.It is hemispherical to be made of rounded portions 91c that the front end of 91p (third pin) is sold shown in Figure 12 (a).
By using the upper mold 91 for having the pin 91p for being provided with rounded portions 91c, the front end of 91p is sold as shown in Figure 12 (b) Shape is transferred into the Bottom Shape of the bottom 5b of connector portion 5.That is, the Bottom Shape of the bottom 5b of connector portion 5 is to be justified by bottom surface Shape portion 5bc is constituted hemispherical.In this way, being provided with the electric power of the connector portion 5 of rounded portions 91c with partly leading in front end having In body device 1, when press-fit terminals 2 are inserted into connector portion 5, as shown in figure 13 for the deformation of anchor portion 2n, it can obtain The contact area more than the first pin or the second pin, can further increase the retentivity of press-fit terminals 2.
As previously discussed, the power semiconductor device 1 of embodiment 1 is characterized in that having: power semiconductor member Part 8 is engaged with the circuit face 6f of circuit substrate 3；Multiple lead patterns 23,24,25, respective one end use half with including electric power Any circuit block of the circuit block for being set to the side circuit face 6f of conductor element 8 connects, and respectively in another side Predetermined position has through hole；Seal 4 is formed as potted circuit component and circuit face 6f, has substantially flat with circuit face 6f Capable interarea 4f；Female type connectors (connector portion 5), corresponding to the respective through hole 21h of multiple lead patterns 23,24,25, It is formed from the interarea 4f of seal 4 to circuit face 6f；And press-fit terminals 2, there is connector to be inserted into terminal 2a, the connector Insertion terminal 2a is fixed on female type connectors (connector portion 5).Connector insertion terminal 2a is characterized in that having: anchor portion 2n, It is set to the insertion front end side to female type connectors (connector portion 5), and is fixed on the bottom of female type connectors (connector portion 5) (bottom 5b) and side (cylindrical portion 5hd)；And press-fitting portion 2p, it is set to the insertion depth part more shallow than anchor portion 2n, and It is connect with the through hole 21h of lead pattern 23,24,25.The power semiconductor device 1 of embodiment 1 is pressed due to this feature Matching terminal 2 has the anchor portion 2n at the bottom (bottom 5b) and side (cylindrical portion 5hd) of being fixed on female type connectors (connector portion 5) The press-fitting portion 2p being connect with the through hole 21h of lead pattern 23,24,25, so can be improved press-fit terminals 2 and connector The retentivity of (connector portion 5) can minimize and improve reliability.
Embodiment 2.
4~Figure 18 illustrates the power semiconductor device 1 in embodiments of the present invention 2 referring to Fig.1.Figure 14 is to show this The figure of the press-fit terminals of the embodiment 2 of invention, Figure 15 are the figures for showing press-fit terminals and connector portion.Figure 16 is explanatory diagram The figure of the reaction force of 14 press-fit terminals.Power semiconductor device 1 in embodiment 2 only connects compared with embodiment 1 The shape for connecing the shape of the terminal fixing part 5c in device portion 5 and the anchor portion 2n of press-fit terminals 2 is different.Therefore, it is somebody's turn to do in following only explanation Distinctive points.
The anchor portion 2n of the press-fit terminals 2 of Figure 14 by periphery and through hole (anchor portion through hole) 2nh copper frame of different size Equal metal frames are constituted, and have the protrusion 2t to three positions of the inside of through hole 2nh.There are two the tools of the upside of anchor portion 2n The protrusion 2t at position has the protrusion 2t at a position in downside.When press-fit terminals 2 are inserted into connector portion 5, anchor Portion 2n compressive deformation as shown in figure 15.In deformation, the front end of protrusion 2t contacts with each other respectively and compressive deformation.At this point, such as Shown in Figure 16, the reaction force 31 that 5b is subject to from bottom is generated in the depth direction of connector portion 5, but each other due to protrusion 2t Compressive deformation and reaction force 31 is distributed to horizontal direction by the protrusion 2t of upside, passed to the direction of reaction force 32,33 Pass the cylindrical portion 5hd of connector portion 5.As a result, the power semiconductor device 1 of embodiment 2 can by connector portion 5 to The stress of depth direction is effectively converted into horizontal direction, carries out the fixation of the anchor portion 2n and cylindrical portion 5hd of press-fit terminals 2, with The structure of embodiment 1 is more firmly secured compared to anchor portion 2n and cylindrical portion 5hd.
The anchor portion 2n of the press-fit terminals 2 of the power semiconductor device 1 of embodiment 2 is formed as the frame shape that inside is dug through Shape, and there is the protrusion 2t inwardly at least three positions in the anchor portion through hole (through hole 2nh) dug through, make It is located at insertion front end side for the first connecting portion of one of protrusion 2t, and first connecting portion is located at the width direction in anchor portion 2n Center side, the two protrusion 2ts different from first connecting portion are located at the side press-fitting portion 2p, and protrusion 2t is located at than first Protrusion is by the position of the perimeter sides of the width direction of anchor portion 2n, so can be improved press-fitting compared with the structure of embodiment 1 The retentivity of terminal 2 and connector portion 5 can minimize and improve reliability.
It is implemented in addition, being provided with as shown in figure 15 in the surface side of terminal fixing part 5c (side interarea 4f of seal 4) The surface tapering 5st being tapered is so that opening area becomes larger.By the way that surface tapering 5st is arranged, even if in press-fit terminals 2 to connector In the case that portion 5 is obliquely inserted into, the side of straight line portion 2s is inserted into also along surface tapering 5st, i.e. surface tapering 5st performance is drawn The effect of guiding element, so the connector portion 5 of embodiment 2 has the effect of correcting direction of insertion.As a result, in embodiment 2 In power semiconductor device 1, finally press-fit terminals 2 and connector portion 5 are inserted into parallel, press-fit bond quality is stablized. In addition, the position deviation of the substrate insertion terminal 2b in the seal 4 of the power semiconductor device 1 of embodiment 2 is lowered, Good bond quality can be obtained when installing external substrate.
In addition, as long as there are two positions for tool as shown in figure 17 by protrusion 2t, it will be able to meet the bottom 5b with connector portion 5 When touching is horizontal direction to the stress alternation of depth direction, and anchor portion 2n is pressed into the side cylindrical portion 5hd, so at least having two The protrusion 2t at a position.
Figure 17 is the figure for showing another press-fit terminals of embodiments of the present invention 2, and Figure 18 is the press-fitting end for showing Figure 17 The figure of son and connector portion.The situation for being two in the protrusion 2t for the anchor portion 2n for being set to press-fit terminals 2 as shown in figure 17 Under, the fixed force of anchor portion 2n and cylindrical portion 5hd slightly declines than the protrusion 2t situation for being 3, but the structure with embodiment 1 It compares, anchor portion 2n is more firmly secured with cylindrical portion 5hd.Therefore, the power semiconductor of the press-fit terminals 2 of Figure 17 is installed Device 1 plays effect same as the power semiconductor device 1 of press-fit terminals 2 of Figure 14 is equipped with.
The anchor portion 2n of the press-fit terminals 2 of other power semiconductor devices 1 of embodiment 2 is formed as what inside was dug through Frame shape shape, and with the protrusion inwardly at least two positions at the anchor portion through hole (through hole 2nh) dug through Portion 2t, so can be improved the retentivity of press-fit terminals 2 Yu connector portion 5 compared with the structure of embodiment 1, it can be small-sized Change and improves reliability.
Embodiment 3.
9~Figure 22 illustrates the power semiconductor device 1 in embodiments of the present invention 3 referring to Fig.1.Figure 19 is to show this The figure of the press-fit terminals of the embodiment 3 of invention, Figure 20 are the figures for showing the press-fit terminals and connector portion of Figure 19.Figure 21, Figure 22 is the figure of the angle corrective action of the substrate insertion terminal of the press-fit terminals of explanatory diagram 19.Figure 21 is shown press-fit terminals 2 Substrate insertion terminal 2b be inserted into the state before the through-hole 51 of external substrate 50, the substrate that Figure 22 shows press-fit terminals 2 is inserted Enter the state that terminal 2b is inserted into the through-hole 51 of external substrate 50.Power semiconductor device 1 and implementation in embodiment 3 Mode 1 and 2 is compared, and only the shape of press-fit terminals 2 is different.Therefore, only illustrate the distinctive points following.
The trunk of the press-fit terminals 2 of embodiment 3 being located between connector insertion terminal 2a and substrate insertion terminal 2b The shape in portion is different from another press-fit terminals 2 of embodiment 2 shown in Figure 17.The trunk of the press-fit terminals 2 of Figure 17 is only Straight line portion 2s, but the trunk 40 of the press-fit terminals 2 of embodiment 3 has straight line portion 2s and curved bottom surface portion 41.Straight line portion 2s It is inserted into the side terminal 2b positioned at the substrate of trunk 40, curved bottom surface portion 41 is located at the connector insertion side terminal 2a of trunk 40. Curved bottom surface portion 41 is prominent to the connector insertion side terminal 2a, that is, bends to convex form.
In addition, showing in Figure 19~Figure 22 by the trunk of another press-fit terminals 2 of embodiment 2 shown in Figure 17 The example of press-fit terminals 2 after portion's change, but the press-fit terminals 2 of embodiment 3 are not limited to this.That is, the press-fitting of embodiment 3 Terminal 2 is also possible to the trunk of the press-fit terminals 2 of Figure 14 of the press-fit terminals 2 of Fig. 5 in embodiment 1, embodiment 2 Press-fit terminals after change.In addition, in embodiment 1 and 2, in trunk, although non-diacritic 40, embodiment party The straight line portion 2s of press-fit terminals 2 in formula 1 and 2 is also trunk 40.
As shown in figure 20, the press-fit terminals 2 of embodiment 3 are different from the press-fit terminals 2 of embodiment 1 and 2, trunk 40 curved bottom surface portion 41 and terminal fixing part bottom surface 5cb be not with face contact, but the curved bottom surface portion 41 of trunk 40 and cylinder The end of shape portion 5hu, i.e. cylindrical portion 5hu opening portion concentric circles contact.The trunk of the press-fit terminals 2 of embodiment 3 40 curved bottom surface portion 41 and the end of cylindrical portion 5hu, i.e. cylindrical portion 5hu opening portion concentric circles contact, so even if In substrate insertion terminal 2b relative in the inclined situation of interarea of power semiconductor device 1, can be also inserted by substrate Substrate insertion terminal 2b is reliably inserted into through-hole 51 when terminal 2b is inserted into the through-hole 51 of external substrate 50.Illustrate reality below Apply the effect of the press-fit terminals 2 of mode 3.
Be shown in FIG. 21 press-fit terminals 2 substrate insertion terminal 2b relative to power semiconductor device 1 interarea, The case where i.e. the interarea 4f of seal 4 is tilted.The connector insertion terminal root of connector insertion terminal 2a is shown in FIG. 21 Portion 2ac bending, the inclined example of through hole center 52 of trunk 40 and substrate insertion terminal 2b relative to through-hole 51.In addition, The substrate insertion unbent example of terminal root 2bc of substrate insertion terminal 2b is shown in FIG. 21.The press-fitting of embodiment 3 The curved bottom surface portion 41 of terminal 2 relative to the end of cylindrical portion 5hu, i.e. cylindrical portion 5hu opening portion concentric circles contact, institute With when inclined substrate insertion terminal 2b and the through-hole 51 of external substrate 50 contact, between curved bottom surface portion 41 and press-fitting portion 2p, Such as connector insertion terminal root 2ac is bent, and can adjust the angle of substrate insertion terminal 2b.
As shown in figure 22, the press-fit terminals 2 of embodiment 3 are inserted into the inboard of through-hole 51 with substrate insertion terminal 2b The end of (in Figure 22 upside), the curved bottom surface portion 41 of trunk 40 and cylindrical portion 5hu, the i.e. opening portion of cylindrical portion 5hu Contact position adjusts the gradient of substrate insertion terminal 2b while moving.That is, the press-fit terminals 2 of embodiment 3 pass through Substrate is inserted into the substrate insertion terminal axis 53 and through hole center of the front end of terminal 2b and the center of substrate insertion terminal root 2bc 52 angle becomes smaller.When substrate insertion terminal 2b is inserted completely into through-hole 51, straight line portion 2s's in trunk 40 is straight Line portion upper surface 2su is contacted with the bottom metal 51a of through-hole 51, the bottom metal 51a phase of straight line portion upper surface 2su and through-hole 51 It is mutually parallel.It is shown in FIG. 22 and substrate insertion terminal 2b is inserted into through-hole 51 so that the substrate of substrate insertion terminal 2b is inserted into The example parallel with the through hole center 52 of through-hole 51 of terminal axis 53.In addition, when substrate insertion terminal 2b is inserted into through-hole 51, The substrate insertion terminal 2b for the frame shape shape that inside is dug through is pressed against through-hole 51 and deforms, but is inserted into terminal according to the substrate The deformation of 2b, the also terminal axis 53 of substrate insertion sometimes is not substantially parallel with through hole center 52, and is slightly tilted.Even if at this In the case of, the angle of substrate insertion terminal 2b can be also adjusted, so there is no problem.That is, substrate can also be inserted into terminal 2b Through-hole 51 is inserted into so that the substrate insertion terminal axis 53 and the through hole center 52 of through-hole 51 of substrate insertion terminal 2b are substantially parallel (substantial parallel).
In the power semiconductor device 1 of embodiment 3, press-fit terminals 2 have in the same manner as embodiment 1 and 2 Be fixed on the bottom (bottom 5b) of female type connectors (connector portion 5) and the anchor portion 2n of side (cylindrical portion 5hd) and with lead figure The press-fitting portion 2p of the through hole 21h connection of case 23,24,25, so can be improved press-fit terminals 2 and connector (connector portion 5) Retentivity, can minimize and improve reliability.
In the press-fit terminals 2 of embodiment 3, the adjustment substrate insertion when substrate insertion terminal 2b is inserted into through-hole 51 The gradient of terminal 2b, so even if the position of substrate insertion terminal 2b is deviateed relative to the through hole center 52 of external substrate 50, Substrate insertion terminal 2b and straight line portion 2s between, for example substrate insertion terminal root 2bc will not bend and occur to external substrate 50 insertion is bad.Therefore, be equipped with the press-fit terminals 2 of the power semiconductor device 1 of the press-fit terminals 2 of embodiment 3 to The undesirable incidence of the insertion of external substrate 50 is reduced, and yield rate improves.
Embodiment 4.
Illustrate the power semiconductor device 1 in embodiments of the present invention 4 referring to Figure 23~Figure 29.Figure 23 is to show this The figure of the press-fit terminals of the embodiment 4 of invention, Figure 24 are the figures for showing the press-fit terminals and the first connector portion of Figure 23.Figure 25 be the first connector portion and press-fit terminals and the figure seen of Figure 24 from the direction B, and Figure 26 is the interarea from seal Observe the first connector portion of Figure 24 and the figure seen in side.Figure 27 is the press-fit terminals and the second connector portion for showing Figure 23 Figure.Figure 28 is the second connector portion and press-fit terminals and the figure seen of Figure 27 from the direction B, and Figure 29 is from seal Main surface side observes the second connector portion of Figure 27 and the figure seen.Power semiconductor device 1 and embodiment party in embodiment 4 Formula 1 and 2 is compared, and press-fit terminals 2 are different with the shape of connector portion 5.Therefore, only illustrate the distinctive points following.
Firstly, illustrating the shape of the press-fit terminals 2 of embodiment 4.The press-fit terminals 2 of embodiment 4 are created as plate Press-fit terminals, positioned at connector be inserted into terminal 2a and substrate insertion terminal 2b between trunk shape and Figure 17 shown in Another press-fit terminals 2 of embodiment 2 are different.The difference of the press-fit terminals 2 of the press-fit terminals 2 and Figure 17 of embodiment 4 exists Lead to portion 42 in, the straight line portion 2s as trunk 40 has, lead to portion 42 in this is dug through into round shape or ellipse inside it Shape.As shown in Figure 24, Figure 27, in lead to portion 42 due to load when press-fit terminals 2 to be inserted into power semiconductor device 1 and by It shrivels, deform.In addition, the example with the press-fit terminals 2 for leading to portion 42 in elliptical is shown in FIG. 23.
The press-fit terminals 2 of embodiment 4 when being inserted into power semiconductor device 1 in lead to portion 42 be flattened, thus directly A part of line portion 2s extends in the direction of the width, contacts with the side of the terminal fixing part 5c in connector portion 5.Straight line at this time A part of portion 2s is deep into the side of terminal fixing part 5c and plays Anchoring Effect, thus the straight line portion 2s quilt of press-fit terminals 2 Side fixed to the terminal fixing part 5c in connector portion 5.2 phase of press-fit terminals of press-fit terminals 2 and Figure 17 of embodiment 4 Than the retentivity that can be improved press-fit terminals 2 Yu connector portion 5, reliability can be improved.This is the press-fitting for leading to portion 42 in having The effect of terminal 2.The power semiconductor device 1 for being equipped with the press-fit terminals 2 of embodiment 4 for leading to portion 42 in having can mention The retentivity of high press-fit terminals 2 and connector portion 5, can be improved reliability.
In addition, being shown in Figure 23~Figure 29 by the trunk of another press-fit terminals 2 of embodiment 2 shown in Figure 17 The example of press-fit terminals 2 after change.The press-fit terminals 2 of embodiment 4 are not limited to this, and being also possible to will be in embodiment 1 The press-fit terminals 2 of Fig. 5, embodiment 2 Figure 14 press-fit terminals 2 trunk change after press-fit terminals.
The shape of the connector portion 5 of embodiment 4 will be illustrated next.First connector portion 5 shown in Figure 25 shows Figure 26 Line B-B section, the first connector portion 5 shown in Figure 24 shows the section of the line C-C of Figure 26.In Figure 25, Tu26Zhong, A part of the cylindrical portion 5hd of connector portion 5 narrows from the bottom surface of lead pattern 23 to bottom 5b, and it is pressure that bottom 5b, which has width, Narrow bottom 43a, 43b, 43c, 43d of the plate thickness degree of matching terminal 2.In Figure 26, shows and bottom 5b is provided with 4 narrow bottoms The example of portion 43a, 43b, 43c, 43d.Bottom 43a, 43b, 43c, 43d 4 narrow are formed in the peripheral part and dotted line four of bottom 5b Between each one side of side shape 47.Each narrow bottom 43a, 43b, 43c, 43d are formed as the through hole 21h than lead pattern 23,24,25 Diameter it is narrow.Press-fit terminals 2 in Figure 24 show the example for being inserted into narrow bottom 43a and narrow bottom 43b.In addition, narrow bottom Symbol uniformly use 43, in the case where differentiation use 43a, 43b, 43c, 43d.
First upper opening 44 is formed at the opening of the connector portion 5 of the interarea 4f of seal 4, the second upper opening 45 It is the opening of the connector portion 5 of the lower end of surface tapering 5st.Extension opening 46 is formed at the upper end of extension 5e Portion, i.e. cylindrical portion 5hu upper end connector portion 5 opening.The shape of bottom 5b in first connector portion 5 is by dotted line Quadrangle 47 and 4 narrow bottom 43a, 43b, 43c, 43d altogether obtained from shape.
In the case where being rotatably inserted into press-fit terminals 2 to the direction of arrow 48 or arrow 49 as shown in figure 25, work as pressure The connector insertion terminal 2a of matching terminal 2 is reached with the width in the direction plate thickness ts of press-fit terminals 2 (in Figure 25 left and right directions Width) mode that narrows change cylindrical portion 5hd when, press-fit terminals 2 it is vertical with plate thickness surface (it can be seen that face of plate thickness ts) Front and the back side moved along the slope of the cylindrical portion 5hd opposed with the front and the back side, i.e. cylindrical portion 5hd becomes Guiding piece inhibits press-fit terminals 2 to rotate on the direction shown in arrow 48 or arrow 49, and press-fit terminals 2 are corrected at vertical Direction (extending direction of connector portion 5).The connector portion 5 of embodiment 4 can be configured to insert when the connector of press-fit terminals 2 When entering terminal 2a arrival narrow bottom 43a, 43b, make press-fit terminals 2 towards vertical direction (extending direction of connector portion 5).Cause This, even if having 1 press-fit terminals 2 of power semiconductor device of the embodiment 4 of such connector portion 5 relative to connector The extending direction in portion 5 is obliquely inserted into, and can also be configured to the extending direction for making press-fit terminals 2 towards connector portion 5.Cause This, the power semiconductor device 1 of embodiment 4 can be improved the position precision of press-fit terminals 2, can be improved finished product Rate.In addition, in press-fit terminals 2, as long as being at least connected with device insertion terminal 2a is formed as plate.Connector is inserted into terminal 2a It is narrow that the anchor portion 2n of the press-fit terminals 2 formed with plate is capable of fixing the diameter in the through hole 21h than lead pattern 23,24,25 Narrow bottom 43.
In addition, the connector insertion terminal 2a for showing press-fit terminals 2 in Figure 24~Figure 26 is configured at two narrow bottoms The example of 43a, 43b, but be for example also possible to configure the connection of press-fit terminals 2 in the connector portion 5 for having bottom 43a 1 narrow Device is inserted into the case where terminal 2a.Even if connector is inserted into terminal 2a in the case where having connector portion 5 of bottom 43a 1 narrow Unilateral side (in Figure 24 connector insertion terminal 2a left side) be inserted into narrow bottom 43a and configure, so can be configured to Make press-fit terminals 2 towards vertical direction (extending direction of connector portion 5).In the connector portion 5 for having bottom 43a 1 narrow In the case of, the length of preferably narrow bottom 43a, the i.e. length in the direction width Wa, Wf of press-fit terminals 2 (in Figure 26 right and left To length) it is long.The long connector portion 5 of the length of narrow bottom 43a increases the connector insertion terminal 2a's for keeping press-fit terminals 2 Area, so can more precisely be configured to make 2 court of press-fit terminals compared with the short connector portion 5 of the length of narrow bottom 43a To vertical direction (extending direction of connector portion 5).
Connector portion 5 shown in Figure 27~Figure 29 is to have the case where 1 narrow bottom 43 and is to have maximum narrow bottom The example of length.Second connector portion 5 shown in Figure 27 shows the section of the line C-C of Figure 29, the second connection shown in Figure 28 Device portion 5 shows the section of the line B-B of Figure 29.In the second connector portion 5 shown in Figure 28, Figure 29, the cylinder of connector portion 5 A part of shape portion 5hd narrows from the bottom surface of lead pattern 23 to bottom 5b, and it is the plate thickness of press-fit terminals 2 that bottom 5b, which has width, The narrow bottom 43 of degree.In this case, bottom 5b becomes narrow bottom 43, so bottom 5b can become as press-fit terminals 2 The narrow Bottom Shape of the width of plate thickness degree.
Second connector portion 5 and the first connector portion 5 are carried out similarly effect, so playing same with the first connector portion 5 The effect of sample.Therefore, even if press-fit terminals 2 are obliquely inserted into relative to the extending direction of connector portion 5, has the second connection The power semiconductor device 1 of the embodiment 4 in device portion 5 can also be configured to make press-fit terminals 2 towards the second connector portion 5 Extending direction.Therefore, the power semiconductor device 1 of embodiment 4 can be improved the position precision of press-fit terminals 2, Neng Gouti High product yield rate.
In the power semiconductor device 1 of embodiment 4, in the same manner as embodiment 1 and 2, press-fit terminals 2 have Be fixed on the bottom (bottom 5b) of female type connectors (connector portion 5) and the anchor portion 2n of side (cylindrical portion 5hd) and with lead figure The press-fitting portion 2p of the through hole 21h connection of case 23,24,25, so can be improved press-fit terminals 2 and connector (connector portion 5) Retentivity, can minimize and improve reliability.
In addition, in the respective embodiments described above, being functioned as switch element (transistor) 11 or rectifier cell 12 Power semiconductor element 8 is also possible to the general element using silicon wafer as substrate, but is able to use silicon carbide in the present invention (SiC), the wide so-called wide band gap semiconducter material of band gap gap-ratio silicon as gallium nitride (GaN) based material or diamond Material.Using formed using wide bandgap semiconductor materials, with high electric current tolerance and be able to carry out high temperature movement In the case where semiconductor element, there is especially significant effect in power semiconductor device 1 of the invention.Particularly preferred for making With the power semiconductor element of silicon carbide.As device category without being particularly limited to, besides igbts, it is also possible to MOSFET (Metal Oxide Semiconductor Field-Effect-Transistor, MOS field Effect transistor), as long as other vertical semiconductor elements.
The switch element 11 or the (power semiconductor in each embodiment of rectifier cell 12 formed by wide band gap semiconducter Element 8) power consumption it is lower than the element formed by silicon, so can be realized the efficient of switch element 11 or rectifier cell 12 Change, or even can be realized the high efficiency of power semiconductor device 1.In turn, resistance to pressure is high, and allowable current density is also high, so The miniaturization that can be realized switch element 11 or rectifier cell 12, by using the switch element 11 or rectification member of these miniaturizations Part 12, power semiconductor device 1 also can be realized miniaturization.In addition heat resistance is high, so being able to carry out high temperature movement, moreover it is possible to It is enough to realize air-cooledization for being installed on the miniaturization and water cooling portion of the heat release fin (cooler) of radiator, so electric power can be made to use Semiconductor device 1 more minimizes.
Therefore, it will be used to the construction that the connector portion 5 of external electrical connections is formed in the side interarea 4f be that miniaturization institute is required Construction.At this point, will connect as the parent form for being used to connect the terminal as press-fit terminals 2 as shown in the respective embodiments described above The connector portion 5 for connecing device is formed as being connected to the through hole 21h in lead frame 21, so the position precision of each connector portion 5 Height tails off to the stress of electrical connection, so can be improved reliability.That is, can be lived by playing effect of the invention With the characteristic of wide band gap semiconducter.
It, can also be by addition, can both form switch element 11 and rectifier cell 12 this two side by wide band gap semiconducter The element of wide band gap semiconducter formation either side.
In addition, the forming method of the seal as Embodiments 1 to 4, is not limited to transfer modling, it is also possible to be molded into Type or compression forming can obtain same effect using thermosetting resin or thermoplastic resin about resin.Make For object encapsulation body, it is not limited to construction of the present invention, as long as the packaging body with lead frame and substrate, it will be able to obtain same Effect.Terminal direction is not limited to the interarea direction of packaging body, and can be by bending internal lead frame vertically It deforms, keeps the press-fit terminals prominent to side surface direction.Packaging body other than projecting from the surface terminal, even make terminal from Side DIP outstanding (Dual Inline Package, dual-inline package body), SIP (Single Inline Package, single in-line packages body) etc. can also obtain same effect.In addition, the present invention is in the range of no contradiction Can the content to each embodiment be freely combined, or each embodiment is suitably deformed, is omitted.

Claims (38)

1. a kind of power semiconductor device, which is characterized in that have:
Power semiconductor element, the circuit face bonding with circuit substrate；
Multiple lead patterns, the one end of each lead pattern are set to the electricity with including the power semiconductor element Any circuit block connection in the circuit block of road surface side, and there is through hole in the predetermined position of another side；
Seal is formed as sealing the circuit block and the circuit face and having the master substantially parallel with the circuit face Face；
Female type connectors, it is corresponding with the through hole of each lead pattern of the multiple lead pattern, from the master of the seal It is formed towards the circuit face；And
There is press-fit terminals connector to be inserted into terminal, and connector insertion terminal is fixed on the female type connectors,
The connector insertion terminal includes
Anchor portion is set to the insertion front end side to the female type connectors, and be fixed on the female type connectors bottom and Side；And
Press-fitting portion is set to the insertion depth part more shallow than the anchor portion, and connects with the through hole of the lead pattern It connects.
2. power semiconductor device according to claim 1, which is characterized in that
In the connector insertion terminal of the press-fit terminals, the width of the press-fitting portion is formed as than the through hole Diameter is big, and the width in the anchor portion is formed as smaller than the diameter of the through hole.
3. power semiconductor device according to claim 1, which is characterized in that
The anchor portion is formed as the frame shape shape dug through of inside, and at the anchor portion through hole dug through at least there are two tools The protrusion inwardly at position.
4. power semiconductor device according to claim 2, which is characterized in that
The anchor portion is formed as the frame shape shape dug through of inside, and at the anchor portion through hole dug through at least there are two tools The protrusion inwardly at position.
5. power semiconductor device according to claim 1, which is characterized in that
The anchor portion is formed as the frame shape shape dug through of inside, and at the anchor portion through hole dug through at least there are three tools The protrusion inwardly at position,
First connecting portion as a protrusion in the protrusion is located at insertion front end side, and the first connecting portion is located at The center side of the width direction in the anchor portion,
Two protruding parts different from the first connecting portion are in the press-fitting portion side, and the protrusion is located at ratio The first connecting portion more leans on the position of the perimeter sides of the width direction in the anchor portion.
6. power semiconductor device according to claim 2, which is characterized in that
The anchor portion is formed as the frame shape shape dug through of inside, and at the anchor portion through hole dug through at least there are three tools The protrusion inwardly at position,
First connecting portion as a protrusion in the protrusion is located at insertion front end side, and the first connecting portion is located at The center side of the width direction in the anchor portion,
Two protruding parts different from the first connecting portion are in the press-fitting portion side, and the protrusion is located at ratio The first connecting portion more leans on the position of the perimeter sides of the width direction in the anchor portion.
7. according to claim 1 to power semiconductor device described in any one in 6, which is characterized in that
The female type connectors have: interarea opening portion, in the side shape of the seal interarea of the interarea as the seal It is big as the diameter than the through hole；And cylindrical portion, more lean on circuit surface side landform to become than the interarea opening portion And the through hole is concentric and identical as the perforation bore dia,
The press-fit terminals have trunk, the trunk in the side opposite with the insertion front end side to the female type connectors Width than connector insertion terminal is big,
The trunk bottom surface of the circuit surface side of the trunk and the master of the circuit surface side in the interarea opening portion The contact of face opening portion bottom surface.
8. according to claim 1 to power semiconductor device described in any one in 6, which is characterized in that
The female type connectors have: interarea opening portion, in the side shape of the seal interarea of the interarea as the seal It is big as the diameter than the through hole；And cylindrical portion, more lean on circuit surface side landform to become than the interarea opening portion And the through hole is concentric and identical as the perforation bore dia,
The press-fit terminals have trunk, the trunk in the side opposite with the insertion front end side to the female type connectors Width than connector insertion terminal is big,
It is provided in the female type connectors side of the trunk to female type connectors side curved bottom surface portion outstanding, institute Curved bottom surface portion is stated to contact with the end of the seal main surface side of the cylindrical portion.
9. according to claim 1 to power semiconductor device described in any one in 6, which is characterized in that
The female type connectors have: interarea opening portion, in the side shape of the seal interarea of the interarea as the seal It is big as the diameter than the through hole；First cylindrical portion more leans on circuit surface side landform to become than the interarea opening portion And the through hole is concentric and identical as the perforation bore dia；And second cylindrical portion, it is set to than first cylindrical portion The position of the circuit surface side is more leaned on, and a part has diameter identical with the through hole,
The press-fit terminals have trunk, the trunk in the side opposite with the insertion front end side to the female type connectors Width than connector insertion terminal is big,
The interarea of the circuit surface side of the trunk bottom surface and interarea opening portion of the circuit surface side of the trunk The contact of opening portion bottom surface.
10. according to claim 1 to power semiconductor device described in any one in 6, which is characterized in that
The female type connectors have: interarea opening portion, in the side shape of the seal interarea of the interarea as the seal It is big as the diameter than the through hole；First cylindrical portion more leans on circuit surface side landform to become than the interarea opening portion And the through hole is concentric and identical as the perforation bore dia；And second cylindrical portion, it is set to than first cylindrical portion The position of the circuit surface side is more leaned on, and a part has diameter identical with the through hole,
The press-fit terminals have trunk, the trunk in the side opposite with the insertion front end side to the female type connectors Width than connector insertion terminal is big,
It is provided in the female type connectors side of the trunk to female type connectors side curved bottom surface portion outstanding, institute Curved bottom surface portion is stated to contact with the end of the seal main surface side of first cylindrical portion.
11. power semiconductor device according to claim 7, which is characterized in that
The press-fit terminals the trunk be provided with inside made of digging through in lead to portion.
12. power semiconductor device according to claim 8, which is characterized in that
The press-fit terminals the trunk be provided with inside made of digging through in lead to portion.
13. power semiconductor device according to claim 9, which is characterized in that
The press-fit terminals the trunk be provided with inside made of digging through in lead to portion.
14. power semiconductor device according to claim 10, which is characterized in that
The press-fit terminals the trunk be provided with inside made of digging through in lead to portion.
15. according to claim 1 to power semiconductor device described in any one in 6, which is characterized in that
The connector insertion terminal of the press-fit terminals is formed as plate,
In the female type connectors and the connector is inserted into the opposed with the vertical front of plate thickness surface and the back side of terminal , a part of the sides of the female type connectors narrows to the bottom.
16. power semiconductor device according to claim 9, which is characterized in that
The connector insertion terminal of the press-fit terminals is formed as plate,
In the female type connectors and the connector is inserted into the opposed with the vertical front of plate thickness surface and the back side of terminal , a part of the sides of the female type connectors narrows to the bottom.
17. power semiconductor device according to claim 10, which is characterized in that
The connector insertion terminal of the press-fit terminals is formed as plate,
In the female type connectors and the connector is inserted into the opposed with the vertical front of plate thickness surface and the back side of terminal , a part of the sides of the female type connectors narrows to the bottom.
18. power semiconductor device according to claim 13, which is characterized in that
The connector insertion terminal of the press-fit terminals is formed as plate,
In the female type connectors and the connector is inserted into the opposed with the vertical front of plate thickness surface and the back side of terminal , a part of the sides of the female type connectors narrows to the bottom.
19. power semiconductor device according to claim 14, which is characterized in that
The connector insertion terminal of the press-fit terminals is formed as plate,
In the female type connectors and the connector is inserted into the opposed with the vertical front of plate thickness surface and the back side of terminal , a part of the sides of the female type connectors narrows to the bottom.
20. power semiconductor device according to claim 15, which is characterized in that
The female type connectors have the narrow bottom narrower than the diameter of the through hole of the lead pattern, the connection at the bottom The narrow bottom is fixed in the anchor portion of device insertion terminal.
21. power semiconductor device according to claim 16, which is characterized in that
The female type connectors have the narrow bottom narrower than the diameter of the through hole of the lead pattern, the connection at the bottom The narrow bottom is fixed in the anchor portion of device insertion terminal.
22. power semiconductor device according to claim 7, which is characterized in that
The female type connectors have surface tapering, main surface side of the surface tapering in the seal of the interarea opening portion Be formed as conical by its shape.
23. power semiconductor device according to claim 8, which is characterized in that
The female type connectors have surface tapering, main surface side of the surface tapering in the seal of the interarea opening portion Be formed as conical by its shape.
24. power semiconductor device according to claim 9, which is characterized in that
The female type connectors have surface tapering, main surface side of the surface tapering in the seal of the interarea opening portion Be formed as conical by its shape.
25. power semiconductor device according to claim 10, which is characterized in that
The female type connectors have surface tapering, main surface side of the surface tapering in the seal of the interarea opening portion Be formed as conical by its shape.
26. power semiconductor device according to claim 11, which is characterized in that
The female type connectors have surface tapering, main surface side of the surface tapering in the seal of the interarea opening portion Be formed as conical by its shape.
27. power semiconductor device according to claim 12, which is characterized in that
The female type connectors have surface tapering, main surface side of the surface tapering in the seal of the interarea opening portion Be formed as conical by its shape.
28. power semiconductor device according to claim 13, which is characterized in that
The female type connectors have surface tapering, main surface side of the surface tapering in the seal of the interarea opening portion Be formed as conical by its shape.
29. power semiconductor device according to claim 14, which is characterized in that
The female type connectors have surface tapering, main surface side of the surface tapering in the seal of the interarea opening portion Be formed as conical by its shape.
30. power semiconductor device according to claim 16, which is characterized in that
The female type connectors have surface tapering, main surface side of the surface tapering in the seal of the interarea opening portion Be formed as conical by its shape.
31. power semiconductor device according to claim 17, which is characterized in that
The female type connectors have surface tapering, main surface side of the surface tapering in the seal of the interarea opening portion Be formed as conical by its shape.
32. power semiconductor device according to claim 18, which is characterized in that
The female type connectors have surface tapering, main surface side of the surface tapering in the seal of the interarea opening portion Be formed as conical by its shape.
33. power semiconductor device according to claim 19, which is characterized in that
The female type connectors have surface tapering, main surface side of the surface tapering in the seal of the interarea opening portion Be formed as conical by its shape.
34. power semiconductor device according to claim 21, which is characterized in that
The female type connectors have surface tapering, main surface side of the surface tapering in the seal of the interarea opening portion Be formed as conical by its shape.
35. according to claim 1 to power semiconductor device described in any one in 6, which is characterized in that
In the female type connectors, the bottom and the side of the female type connectors are by the bottom surface tapering with conical by its shape Connection.
36. according to claim 1 to power semiconductor device described in any one in 6, which is characterized in that
In the female type connectors, there are the bottom surface rounded portions of round at the bottom of the female type connectors.
37. according to claim 1 to power semiconductor device described in any one in 6, which is characterized in that
The power semiconductor element is formed by wide bandgap semiconductor materials.
38. the power semiconductor device according to claim 37, which is characterized in that
The wide bandgap semiconductor materials are any materials in silicon carbide, gallium nitride material or diamond.
CN201680009619.6A 2015-05-21 2016-05-09 Power semiconductor device Active CN107210279B (en)

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DE112016002302B4 (en) 2022-05-05

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