CN107210279A - power semiconductor device - Google Patents

power semiconductor device Download PDF

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Publication number
CN107210279A
CN107210279A CN201680009619.6A CN201680009619A CN107210279A CN 107210279 A CN107210279 A CN 107210279A CN 201680009619 A CN201680009619 A CN 201680009619A CN 107210279 A CN107210279 A CN 107210279A
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CN
China
Prior art keywords
press
power semiconductor
semiconductor device
interarea
female type
Prior art date
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Granted
Application number
CN201680009619.6A
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Chinese (zh)
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CN107210279B (en
Inventor
川岛裕史
藤野纯司
江草稔
中川信也
田中智典
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN107210279A publication Critical patent/CN107210279A/en
Application granted granted Critical
Publication of CN107210279B publication Critical patent/CN107210279B/en
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

Purpose is to improve the confining force of press-fit terminals and connector to obtain small-sized and high reliability power semiconductor device.The power semiconductor device (1) of the present invention possesses：Multiple lead patterns (23,24,25) a, side is connected with any circuit block in the circuit block including power semiconductor element (8), and has through hole in the precalculated position of another side；Seal (4), potted circuit part and formed；Female type connectors (5), are formed from the interarea (4f) of seal (4) to circuit face (6f)；And press-fit terminals (2), terminal is inserted with connector, connector insertion terminal is fixed on female type connectors.Connector insertion terminal has：Anchor portion, is arranged at the insertion front to female type connectors, is fixed on the bottom and side of female type connectors；And press-fitting portion, the insertion depth part more shallow than anchor portion is arranged at, is connected with the through hole of lead pattern.

Description

Power semiconductor device
Technical field
The present invention relates to the structure of the power semiconductor device of the formation terminal of the interarea in packaging body and terminal shape.
Background technology
In semiconductor devices, power semiconductor device be also used for from commercial plant to civilian household electrical appliances/information is whole The control of the main electric power (power) of the extensive equipment at end, especially requires high reliability in transporting equipment etc..In recent years, especially Be as can make high current flow through and can also carry out high temperature action wide bandgap semiconductor materials carborundum (SiC) conduct Developed instead of the semi-conducting material of silicon (Si).On the other hand, also it is required to reply high current and is easily achieved small-sized Packaging body (seal) mode of change.
Therefore, it is proposed to a kind of power semiconductor device, in the power semiconductor device, in order to reduce setting face Product, terminal is formed (for example, ginseng instead of the mode of the sidepiece formation terminal in the seal using resin in the interarea of seal According to patent document 1.).In addition, though being not formed with the seal based on resin, but propose following wiring plate assembly And electric connection box：Opening porose insulated substrate precalculated position fix with through hole multiple busbars, make busbar with And the hole connection of insulated substrate, male terminal is inserted, thus make on interarea terminal protrude (for example, referring to patent document 2 or 3.).In addition, in patent document 4, it is proposed that a kind of power semiconductor device, in the power semiconductor device, electric power It is sealed by resin with semiconductor element, the interarea of seal is provided with the connector inserted with press-fit terminals.Patent document 4 Power semiconductor device is formed with the multiple lead patterns being connected with power semiconductor element and circuit block and passed through Through hole, through hole is connected with connector.Each lead pattern is configured at least before sealing in the lead frame of one link, institute So that connector can be configured exactly.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2007-184315 publications (the 0021st, 0029 section, Fig. 1, Fig. 3)
Patent document 2：Japanese Unexamined Patent Publication 11-219738 publications (the 0010th~0016 section, Fig. 1, Fig. 2)
Patent document 3：Japanese Unexamined Patent Publication 2004-350377 publications (the 0015th~0027 section, Fig. 1, Fig. 2)
Patent document 4：Japanese Unexamined Patent Publication 2013-152966 publications (the 0033rd~0038 section, Fig. 1)
The content of the invention
But, it is necessary to by multiple terminal positions in exhausted in the power semiconductor device as described in patent document 1~3 Edge substrate and engage, it is difficult to keep the positional precision between terminal.Therefore, it is possible to due to being applied in action process to junction surface etc. Remaining power is added, causes the deterioration of electrical connection section, makes reliability decrease.In addition, in the power semiconductor device of patent document 4 In, when press-fit terminals are inserted into connector, the press-fitting portion compression of press-fit terminals bigger than the diameter of connector, so that Press-fit terminals are only contacted and are kept in the junction with lead pattern, so depending on the radical of terminal, it is contemplated that for from Outside strong vibration confining force is insufficient.Therefore, when in use or when the strong stress such as vibration when installing puts on press-fit terminals, Also sometimes for enough reliabilities.
The present invention completes to solve above-mentioned problem, and its object is to improve the holding of press-fit terminals and connector Power obtains small-sized and high reliability power semiconductor device.
The power semiconductor device of the present invention is characterised by possessing：Power semiconductor element, with circuit substrate Circuit face is engaged；Multiple lead patterns, a side of each lead pattern is respectively with including the setting of power semiconductor element In any circuit block connection of the circuit block of circuit surface side, and there is insertion in the precalculated position of another side respectively Hole；Seal, is formed as potted circuit part and circuit face and has the interarea almost parallel with circuit face；Female type connectors, Each through hole with multiple lead patterns is corresponding, is formed from the interarea of seal to circuit face；And press-fit terminals, have Connector inserts terminal, and connector insertion terminal is fixed on female type connectors.Connector insertion terminal has：Anchor portion, is set In the insertion front to female type connectors, and it is fixed on the bottom and side of female type connectors；And press-fitting portion, it is arranged at The insertion depth part more shallow than anchor portion, and be connected with the through hole of lead pattern.
The present invention power semiconductor device in, due to press-fit terminals have be fixed on female type connectors bottom and The anchor portion of side and the press-fitting portion being connected with the through hole of lead pattern, so the holding of press-fit terminals and connector can be improved Power, can minimize and improve reliability.
Brief description of the drawings
Fig. 1 is the top view of the power semiconductor device of embodiments of the present invention 1.
Fig. 2 is the sectional view of Fig. 1 power semiconductor device.
Fig. 3 is the top view for manufacturing the lead frame of Fig. 1 power semiconductor device.
Fig. 4 is the section for the connector portion for showing Fig. 1 and the figure of press-fit terminals.
Fig. 5 is the figure for the press-fit terminals for showing Fig. 1.
Fig. 6 is the figure of the section for the connector portion for showing Fig. 1.
Fig. 7 is the figure of the module of the manufacture midway for the power semiconductor device for showing Fig. 1.
Fig. 8 is the figure of the manufacturing process for the power semiconductor device for illustrating Fig. 1.
Fig. 9 is the figure of the manufacturing process for the power semiconductor device for illustrating Fig. 1.
Figure 10 is the figure of the pin for another connector portion and mould for showing embodiment 1.
Figure 11 is the figure of the connector portion and press-fit terminals that show Figure 10.
Figure 12 is the figure of the pin for the another connector portion and mould for showing embodiment 1.
Figure 13 is the figure of the connector portion and press-fit terminals that show Figure 12.
Figure 14 is the figure for the press-fit terminals for showing embodiments of the present invention 2.
Figure 15 is the figure of the press-fit terminals and connector portion that show Figure 14.
Figure 16 is the figure of the reaction force for the press-fit terminals for illustrating Figure 14.
Figure 17 is the figure for another press-fit terminals for showing embodiments of the present invention 2.
Figure 18 is the figure of the press-fit terminals and connector portion that show Figure 17.
Figure 19 is the figure for the press-fit terminals for showing embodiments of the present invention 3.
Figure 20 is the figure of the press-fit terminals and connector portion that show Figure 19.
Figure 21 is the figure of the angle adjustment effect of the substrate insertion terminal for the press-fit terminals for illustrating Figure 19.
Figure 22 is the figure of the angle adjustment effect of the substrate insertion terminal for the press-fit terminals for illustrating Figure 19.
Figure 23 is the figure for the press-fit terminals for showing embodiments of the present invention 4.
Figure 24 is the figure of the press-fit terminals and the first connector portion that show Figure 23.
Figure 25 is the first connector portion and press-fit terminals of Figure 24 from B directions and the figure seen.
Figure 26 is the first connector portion of Figure 24 from the interarea side of seal and the figure seen.
Figure 27 is the figure of the press-fit terminals and the second connector portion that show Figure 23.
Figure 28 is the second connector portion and press-fit terminals of Figure 27 from B directions and the figure seen.
Figure 29 is the second connector portion of Figure 27 from the interarea side of seal and the figure seen.
(symbol description)
1：Power semiconductor device；2：Press-fit terminals；2a：Connector inserts terminal；2n：Anchor portion；2p：Press-fitting portion；2s： Line part (trunk)；2sb：Line part bottom surface (trunk bottom surface)；2t：Jut；2nh：Through hole (anchor portion through hole)；3： Circuit substrate；4：Seal；4f：Interarea；5：Connector portion (female type connectors)；5b：Bottom (bottom)；5c：Terminal fixing part is (main Face opening portion)；5cb：Terminal fixing part bottom surface (interarea opening portion bottom surface)；5hu：Cylindrical portion；5hd：Cylindrical portion (side)；5st： Surface tapering；5bt：Bottom surface tapering；5bc：Bottom surface rounded portions；6f：Circuit face；8：Power semiconductor element；21h：Through hole； 23：Lead pattern；24：Lead pattern；25：Lead pattern；40：Trunk；41：Curved bottom surface portion；42：In lead to portion；43、43a、 43b、43c、43d：Narrow bottom；44：First upper opening (interarea opening portion)；Wf：Width；Wa：Width.
Embodiment
Embodiment 1.
Fig. 1 is the top view of the power semiconductor device of embodiments of the present invention 1, and Fig. 2 is Fig. 1 electric power with partly leading The sectional view of body device.Fig. 3 is the top view for manufacturing the lead frame of Fig. 1 power semiconductor device, and Fig. 4 is to show The section of Fig. 1 connector portion and the figure of press-fit terminals.Fig. 5 is the figure for the press-fit terminals for showing Fig. 1, and Fig. 6 shows Fig. 1 The figure of the section of connector portion.Fig. 2 sectional view is the cutting plane of Fig. 1 line A-A, is the length of power semiconductor device Direction sectional view.
First, the structure of power semiconductor device 1 is illustrated.As shown in Figure 1 and Figure 2, the electric power of present embodiment 1 is with partly Conductor device 1 possesses：Outer electrode (such as press-fit terminals 2), the outside base for carrying out and connecting power semiconductor device 1 The electrical connection of plate and/or external circuit；And connector portion 5, include the circuit block of the grade of power semiconductor element 8 including Substantially rectangular packaging body (seal) 4 interarea 4f sides be used as insert press-fit terminals 2 female type connectors play work( Energy.In fig. 1 it is shown that configuring 8 connector portions 5 and in each connector portion 5 inserted with press-fitting in the interarea 4f of seal 4 The example of terminal 2.Press-fit terminals 2 are, for example, the alloy for including copper.
As shown in Fig. 2 the precalculated position on the surface (circuit face 6f) of the radiator 6 as circuit substrate, is used as circuit The switch element 11 and rectifier cell 12 of part are joined to backplate side using solder 7.Switch element 11, rectifier cell 12 For power semiconductor element 8.The e.g. IGBT of rectifier cell 12 (Insulated Gate Bipolar Transistor, absolutely Edge grid bipolar transistor).Switch element 11 is, for example, FwDi (Free Wheeling Diode, fly-wheel diode).Moreover, Lead pattern 23 is engaged using solder 7 with the surface electrode of the main electric power of power semiconductor element 8, the grid of switch element 11 Electrode is electrically connected using gold thread 9 with lead pattern 24.In addition, on the surface of switch element 11, rectifier cell 12, in aluminum metallization Implement gold metallization on electrode, soldering can be carried out.In addition, in order to simplified and not shown, but be additionally provided with circuit face 6f Circuit block beyond power semiconductor element 8, they also with any lead pattern in lead pattern 23, lead pattern 24 Electrical connection.
As shown in figure 3, lead frame 21 is thickness of slab 1mm copper coin to be carried out formed by punching press, lead pattern 23,4 Lead pattern 24 and lead pattern 25 link via linking part 26 with lead frame 22.As shown in Fig. 2 the additional step discrepancy in elevation, with The part for each lead pattern being located on radiator 6 is set to decline than the part in addition to the part to the side of radiator 6.Such as Fig. 3 institutes Show, a part for lead pattern 23, lead pattern 24, lead pattern 25 is provided with a diameter of 2mm through hole 21h, this is passed through Through hole 21h is used to form connector portion 5 in precalculated position.Through hole 21h inside diameter 21hi is the side of each lead pattern of insertion Face.Moreover, untill the process of the finishing in the manufacture method of aftermentioned power semiconductor device 1, each lead pattern is with drawing Wire frame 22 links, and is integrally formed as lead frame 21.That is, being concatenated in each lead pattern in lead frame 21 In the state of, respective position relationship can be maintained exactly for the through hole 21h of each lead pattern formation.In addition, although It is not shown in fig. 2, but lead pattern 25 utilizes solder 7 to be engaged with the circuit face 6f of radiator 6, so that and power semiconductor The backplate electrical connection of element 8.
Even if in addition, the electrode and the outside wiring part being attached to power semiconductor element 8 are not lead frames The lead pattern of frame or the lead pattern of glass epoxy substrate, even if through hole is configured to be substituted for glass ring The through hole of epoxy resin-based plate is also set up.
As shown in Fig. 2 being formed with the dorsal part of the radiator 6 of power circuit in circuit face 6f sides, attached across insulating barrier 14 There is copper foil 15, the region in addition to the back portion of copper foil 15 is sealed.It is almost parallel with the circuit face 6f with being formed The overall rectangular tabular of seal 4 of interarea 4f resin.The exposed division of the copper foil 15 exposed from seal 4 is used to use in electric power After semiconductor device 1 is completed, the coolers such as fin (fin) are installed after external substrate is installed on.Moreover, in seal 4 Interarea 4f is formed with connector portion 5 for each through hole 21h, and the connector portion 5 is formed as recessed from interarea 4f to circuit face 6f Fall into, and connected with corresponding through hole 21h, be used as the female type connectors function for inserting press-fit terminals 2.
As shown in Fig. 4, Fig. 6, connector portion 5 is formed as setting diameter d1 for 3mm terminal to consolidate in the interarea 4f of seal 4 Determine portion (interarea opening portion) 5c, therefrom by way of by diameter d2 for 2mm cylindrical portion 5hu by through hole 21h, and then form tubular Portion 5hd, reaches bottom 5b.Terminal fixing part 5c is the cylindrical shape that diameter d1 is 3mm, and cylindrical portion 5hu, 5hd is that diameter d2 is 2mm Cylindrical shape.Through hole 21h inside diameter 21hi is in the internal cylindrical shape exposed.That is, connector portion 5 be in by with one heart and The two cylindrical section shapes that two different cylindrical shapes of diameter are constituted.The example of the depth dimensions of connector portion 5 is shown.For example from interarea Depth l4s of the 4f untill the 5b of bottom is 7mm, terminal fixing part bottom surface (the interarea opening portion from interarea 4f to terminal fixing part 5c Bottom surface) the depth l1 untill 5cb is 1mm, cylindrical portion 5hu depth l2 is 2mm, is passed through as the lead pattern 23 of current-carrying part Through hole 21h depth tl is 1mm, and cylindrical portion 5hd depth l3 is 3mm.From extension 5es of the cylindrical portion 5hu untill the 5b of bottom Depth (extension depth) le be 6mm.Through hole 21h depth tl is also the pattern thickness of slab of lead pattern 23.In Fig. 4, Fig. 6 In, show that the connector portion 5 in the connector portion 5 in lead pattern 23, but lead pattern 24,25 is also identical.In Fig. 4 In, show the connector portion 5 inserted with press-fit terminals 2 and the connector portion 5 being not inserted into.
Next, using the shape of Fig. 4, Fig. 5 press-fit terminals 2 for illustrating to be inserted into connector portion 5.Press-fit terminals 2 include Line part (trunk) 2s, connector insertion terminal 2a and substrate insertion terminal 2b, insert the connector into terminal 2a and are inserted into Connector portion 5.The width of the width of line part 2s press-fit terminals 2 is Ws, is straight on the length direction of press-fit terminals 2 Wire shaped.The anchor portion 2n that the press-fitting portion 2p and width that terminal 2a is Wf including width are Wa is inserted in connector.Press-fit terminals 2 As long as thickness ts do not twisted when press-fit terminals 2 are inserted into connector portion 5 or warpage thickness.Connector is inserted Enter terminal 2a, anchor portion 2n, substrate insertion terminal 2b and be respectively formed as the frame shape shape that inner side is dug through.
When inserting the connector into terminal 2a as shown in Figure 4 and being inserted into connector portion 5, wide Ws line part 2s and connector The terminal fixing part 5c in portion 5 terminal fixing part bottom surface 5cb contacts, press-fit terminals 2 on the depth direction of connector portion 5 are inserted Enter position to be fixed.Terminal fixing part 5c diameter d1 is preferably matchingly designed with line part 2s width Ws.
Press-fitting portion 2p width Wf ratios are formed at the diameter d2 of the inside diameter 21hi at the through hole 21h of each lead pattern Greatly.Therefore, when press-fitting portion 2p is inserted into connector portion 5, press-fitting portion 2p and the inside diameter 21hi as conductor diameter d2 Correspondingly compression, applies the pressure of the predetermined above due to its repulsion, so that and through hole between inside diameter 21hi 21h inside diameter 21hi is engaged and fixed.
Diameter d2s of the anchor portion 2n width Wa than inside diameter 21hi is small.Therefore, when press-fit terminals 2 are inserted, anchor portion 2n Contacted with the bottom 5b of connector portion 5, and occur to be plastically deformed and contact with cylindrical portion 5hd.And then by the way that press-fit terminals 2 are entered One step is pressed into, so that the 2n compressions of anchor portion, due to the repulsive force from cylindrical portion 5hd, anchor portion 2n is fixed in connector portion 5 cylindrical portion 5hd.
Due to needing to make the 2n compressions of anchor portion before fixed press-fitting portion 2p, so needing to make the straight line from line part 2s Portion bottom surface length of (trunk bottom surface) 2sb untill anchor portion 2n lower surface is that connector inserts terminal length la ratios from connection Depth of the cylindrical portion 5hu in device portion 5 untill the 5b of bottom is extension 5e depth le length.
As long as in addition, the press-fit terminals 2 before insertion keep connector insertion terminal length la than the extension of connector portion 5 The relation of depth le length, then the cylindrical portion 5hd of anchor portion 2n contacts depth can also be below 3mm or more than 3mm.
In addition, the diameter d2 being formed at the through hole 21h of lead pattern 23,24,25 inside diameter 21hi can also be Value beyond 2mm.As long as the diameter d2 and its depth tl at through hole 21h inside diameter 21hi are corresponding with following situation straight Footpath and depth：When press-fit terminals 2 are inserted into connector portion 5, press-fitting portion 2p is with the inside diameter 21hi's as conductor Diameter d2 correspondingly compressions, apply the pressure of the predetermined above due to its repulsion between inside diameter 21hi.
Then, illustrate the interarea 4f of seal 4 is provided with the parent form as terminal insertion using Fig. 2, Fig. 7~Fig. 9 The manufacture method of the power semiconductor device 1 of the connector portion 5 of connector.In addition, before process, being set to lead frame 21 certainly Body has been completed.Fig. 7 is the figure of the module of the manufacture midway for the power semiconductor device for showing Fig. 1.Fig. 8 and Fig. 9 are explanations The figure of the manufacturing process of Fig. 1 power semiconductor device.Fig. 8 is for the mould to being formed with semiconductor circuit in circuit face 6f Block 1M is sealed and is arranged at module 1M the sectional view of the state of mould 90, and Fig. 9 is drawn after and then sealing The sectional view of power semiconductor device 1 before the finishing of wire frame 21.In addition, Fig. 7~Fig. 9 shows the A-A with Fig. 1 The corresponding cutting plane of line.
First, as shown in fig. 7, comprising using solder 7 by power semiconductor element 8 (switch element 11, rectifier cell 12) backplate (cathode electrode, collector electrode) is joined to the pre-determined bit on the surface of the radiator 6 as circuit face 6f Put, carry out the setting of circuit block (not shown).Then, each lead pattern and circuit block of following lead frame 21 are carried out Electrical connection：One end of the lead pattern 23 of lead frame 21 and the electricity of the main electric power on each surface of power semiconductor element 8 The engagement carried out using solder 7, one end of the lead pattern 25 of lead frame 21 and the electricity of pole (anode electrode, emitter electrode) The engagement carried out using solder 7 in road surface 6f precalculated position and the lead of the gate electrode and lead frame 21 of switch element 11 The electrical connection of the use gold thread 9 of pattern 24.Thus, wiring connection terminates, and forms module 1M, and module 1M possesses composition and is based on opening Close the power circuit of the semiconductor switch of element 11 and rectifier cell 12.
So, as shown in figure 8, the module 1M that will be provided with power circuit is arranged on the (mold of mould 90 of transfer modling 91st, lower mould 92) in, and make copper foil 15, insulating barrier 14 thereunder.Now, in the face of mold 91 with through hole 21h The corresponding pre-position in position be configured with sleeve 91s and pin 91p, carry out position alignment (the extension (horizontal) direction in face) So that respectively pin 91p is inserted respectively into corresponding through hole 21h.Then, lead frame is clamped with mold 91 and lower mould 92 21 part, makes lead frame 22 be stretched out to the outside of mould 90, fastens mould 90.Thus, the module that horizontal direction is positioned 1M is also positioned in vertical direction, can accurately determine the relative positions and phase of each through hole 21h in the horizontal direction For interarea 4f depth.
So, when the sky being injected into sealing resin in the mould 90 for dimensionally positioning module 1M in the inside of mould 90 Between and by transfer modling to seal when, as shown in figure 9, seal 4 can be formed, the seal 4 potted circuit face 6f electricity Circuit unit, and with the interarea 4f almost parallel with circuit face 6f.When sealing resin is injected into mould 90, in insertion Hole 21h is inserted with pin 91p, and pin 91p was adjusted diameter to be at least close to through hole 21h inside diameter 21hi.Therefore, Part inserted with pin 91p in seal 4 is formed as the connector connected from interarea 4f with the through hole 21h of each lead pattern The extension 5e in portion 5.In addition, the part inserted with sleeve 91s in seal 4 is formed as the terminal fixing part of connector portion 5 5c.So, formed and possess extension 5e and terminal fixing part the 5c i.e. connector portion 5 of two cylindrical section shapes.Thus, in each connection At device portion 5, as the through hole 21h of conductive part center and terminal fixing part 5c, cylindrical portion 5hu, 5hd center without departing from ground Be formed as concentric, so the outside terminal as press-fit terminals 2 can be smoothly inserted into.
Next, as finishing process, removing the lead frame 22 of the lead frame 21 exposed from seal 4.Although manufacture The electricity that the cutting portion of linking part 26 as shown in Figure 2 is exposed in the side of seal 4 but substantially circuit part is encapsulated by seal 4 Power semiconductor device 1.
When inserting press-fit terminals 2 to connector portion 5, anchor portion 2n first connects with the bottom 5b of connector portion 5 and compresses change Shape.Afterwards, compression stress is produced between anchor portion 2n and cylindrical portion 5hd inwall due to anchor portion 2n deformation, press-fit terminals 2 Anchor portion 2n is fixed on connector portion 5.With its matchingly press-fitting portion 2p be fixed on the inside diameter 21hi of lead frame and be electrically connected Connect.
So, the power semiconductor device 1 of embodiment 1 is configured with interarea 4f is inserted into many of press-fit terminals 2 Individual connector portion 5, so as to be installed from the upper surface (interarea 4f) of power semiconductor device 1 as press-fit terminals 2 Outside terminal, can minimize power semiconductor device 1, can reduce the erection space installed to external substrate. Therefore, it is possible to make the device miniaturization for being provided with power semiconductor device 1.
And then, the power semiconductor device 1 of embodiment 1 is by by the engagement of the compression based on press-fit terminals 2 For the connection to connector portion 5, so as to the temperature lower than the terminal construction of conventional utilization soldering connection by terminal It is installed to connector portion 5.Thus, it is possible to carry out adding again without the solder 7 to the junction surface as power semiconductor element 8 Heat is allowed to melt again or assembles module with softening, it is possible to increase the reliability of solder-joint parts.
When manufacturing the power semiconductor device 1 of embodiment 1, the pin 91p and set for being arranged at mold 91 are utilized Cylinder 91s formation connector portions 5, so as to configure position of each connector portion 5 in interarea 4f as setting.Moreover, mould The pin 91p of tool 90 is formed as being inserted into the through hole 21h being arranged in lead frame 21, so can using each connector portion 5 Make as the through hole 21h center of conductive part function and cylindrical portion 5hu, 5hd of resin and terminal fixing part 5c Center is consistent, eliminates the crooked of axle in connector portion 5.Therefore, it is possible to reduce be inserted into connector portion 5 outside terminal ( In this example be press-fit terminals 2) position or angle deviation, successfully link with external equipment.Or, it will can be arranged at outer Multiple terminals of portion's equipment are smoothly inserted into each connector portion 5.Thus, will not when being installed to equipment or install after and It is unnecessary during the connection of terminal or excessive repulsive force that the after-applied unilateral wall such as in connector portion 5 of connection is produced Power.Deterioration is prevented therefore, it is possible to reduce to the stress of electrical connection section, circuit block etc., it is possible to increase power semiconductor is filled Put 1 reliability.
The power semiconductor device 1 of embodiment 1 is by using press-fit terminals 2, it is not necessary to the installation of external substrate Brazing equipment, can be installed by easy Manual press, so equipment cost can be greatly reduced.In addition, In the power semiconductor device 1 of embodiment 1, even bigger printed base plate can also use press-fit terminals, (substrate is inserted Enter terminal 2b) and be easily installed, and also without technological know-how as soldering (know how) etc., so workability is big Improve width.Especially in power semiconductor device, due to flowing through high current, the area of section of terminal is than general semiconductor Device is big, and when carrying out soldering, the temperature of terminal is difficult to rise, it is difficult to stabilize it.But, the electric power of embodiment 1 is with partly leading Body device 1 is also easily pressed due to using press-fit terminals 2 so changing even if the area of section of press-fit terminals 2, so as to Install, therefore, yield rate is improved.
In addition, the substrate insertion terminal 2b for the press-fit terminals 2 being connected with external substrate both can be the terminal of soldering, It can be spring terminal etc..That is, substrate insertion terminal can be deformed into various sides according to the demand from user Formula.
In the power semiconductor device 1 of embodiment 1, the line part bottom surface 2sb in the line part 2s of press-fit terminals 2 Contact, connected so that it is determined that press-fit terminals 2 are relative with the terminal fixing part bottom surface 5cb in the terminal fixing part 5c of connector portion 5 The position of the depth direction in device portion 5.Thereby, it is possible to meet the prominent length that the press-fit terminals 2 in power semiconductor device 1 are overall Degree, so in the power semiconductor device 1 of embodiment 1, link position is consistent when installing external substrate, so engagement Steady quality.And then, in the power semiconductor device 1 of embodiment 1, by the diameter d1 and pressure that make terminal fixing part 5c The line part 2s of matching terminal 2 matches, so that press-fit terminals 2 or so (are hung down with direction of insertion after insertion press-fit terminals 2 Directly) wave, terminal fixing part 5c side turns into the brake of vibration, so as to can also reduce the load to press-fitting portion 2p.
In addition, in the power semiconductor device 1 of embodiment 1, passing through the press-fit terminals for making to be connected with connector portion 5 2 have anchor portion 2n, are fixed in press-fitting portion 2p and anchor portion the two positions of 2n.Thus in power semiconductor device 1 from outside When vibrated, in addition to keeping press-fitting portion 2p, anchor portion 2n also keeps press-fit terminals 2, so the electricity of embodiment 1 Power semiconductor device 1 can be obtained for vibration or impulse machine, electrically high reliability.
In the case of fin is installed in the exposed surface of copper foil 15, fin is pressed into power semiconductor device 1 and pacified Dress.The anchor portion 2n of the power semiconductor device 1 of embodiment 1 is fixed on the bottom 5b of connector portion 5, so installing fin Even if when via module 1M in stress of the press-fitting portion 2p by depth direction (bearing of trend of connector portion 5), due to anchor portion 2n support connectors portion 5, so press-fitting portion 2p is without departing from steady quality when outside fin is installed.
In addition, being not necessarily required to the layer between each lead pattern and interarea 4f with resin, each lead pattern can also be made Face expose in terminal fixing part 5c lower surface, the cylindrical portion 5hu of connector portion 5 diameter is set to and terminal fixing part 5c Diameter it is identical.In this case connector portion 5 is also two cylindrical section shapes.The line part 2s of press-fit terminals 2 line part bottom Face 2sb and each lead pattern contacts, so as to make the prominent length that the press-fit terminals 2 in power semiconductor device 1 are overall Matching.
Alternatively, it is also possible to which the terminal fixing part 5c of connector portion 5 diameter is set to and cylindrical portion 5hu and each lead figure The through hole 21h of case diameter is identical.That is, terminal fixing part 5c turns into the straight of the line part 2s from interarea 4f to press-fit terminals 2 The part untill part residing for line portion bottom surface 2sb.In this case connector portion 5 is not two cylindrical section shapes, but generally Drum.In this case, the terminal fixing part bottom surface 5cb of the intubating length of press-fit terminals 2 is not specified by, so utilizing The device of press-fit terminals 2 is pressed to adjust the intubating length of press-fit terminals 2.According to the increasing of the reaction force from press-fit terminals 2 Plus state or interarea 4f adjust press-fit terminals 2 with the distance of line part 2s upper surfaces or substrate insertion terminal 2b end Intubating length.
Implemented alternatively, it is also possible to be set as shown in Figure 10 in the front end for being arranged at the pin 91p of the mold 91 of mould 90 The pin tapering 91t being tapered.Figure 10 is the figure of the pin for another connector portion and mould for showing embodiment 1, and Figure 11 is to show Figure 10 connector portion and the figure of press-fit terminals.Figure 10 (a) shows that resin is injected into the connector of the state of mould 90 Portion 5, Figure 10 (b) is shown from the connector portion 5 after the taking-up of mould 90.That is, turn into Figure 10's (b) from Figure 10 (a) state State.The leading section of pin 91p (the first pin) shown in Fig. 8 is cylindrical shape, but before the pin 91p (the second pin) shown in Figure 10 (a) End is the frustum of a cone being made up of pin bottom surface sections 91b and pin tapering 91t.
The mold 91 for the pin 91p for being provided with pin tapering 91t by using possessing, pin 91p front end such as shown in Figure 10 (b) Shape is transferred into the bottom 5b of connector portion 5 Bottom Shape.That is, the bottom 5b of connector portion 5 Bottom Shape is by flat bottom The frustum of a cone that face and bottom surface tapering 5bt are constituted.So, possesses the electricity that bottom surface tapering 5bt is arranged at the connector portion 5 of leading section Power is with semiconductor device 1 in the anchor portion 2n compressions of press-fit terminals 2, it is easy to as shown in figure 11 with for forming seal 4 Sealing resin contact, the contact area increase of anchor portion 2n and connector portion 5, so the confining force of press-fit terminals 2 can be improved.
There is circle alternatively, it is also possible to be set as shown in figure 12 in the front end for being arranged at the pin 91p of the mold 91 of mould 90 The rounded portions 91c of shape.Figure 12 is the figure of the pin for the another connector portion and mould for showing embodiment 1, and Figure 13 is to show figure 12 connector portion and the figure of press-fit terminals.Figure 12 (a) shows that resin is injected into the connector portion of the state of mould 90 5, Figure 12 (b) is shown from the connector portion 5 after the taking-up of mould 90.That is, Figure 12 (b) shape is turned into from Figure 12 (a) state State.The leading section of pin 91p (the 3rd pin) shown in Figure 12 (a) be by rounded portions 91c constitute it is hemispherical.
The mold 91 for the pin 91p for being provided with rounded portions 91c by using possessing, pin 91p front end such as shown in Figure 12 (b) Shape is transferred into the bottom 5b of connector portion 5 Bottom Shape.That is, the bottom 5b of connector portion 5 Bottom Shape is by rounded portions It is hemispherical that 91c is constituted.So, in the power semiconductor dress for possessing the connector portion 5 that rounded portions 91c is provided with leading section Put in 1, when press-fit terminals 2 are inserted into connector portion 5, as shown in figure 13 for anchor portion 2n deformation, can obtain than One pin or many contacts area of the second pin, can further improve the confining force of press-fit terminals 2.
As previously discussed, the power semiconductor device 1 of embodiment 1 is characterised by possessing：Power semiconductor member Part 8, is engaged with the circuit face 6f of circuit substrate 3；Multiple lead patterns 23,24,25, a respective side including electric power with using half Any circuit block connection of the circuit block for being arranged at circuit face 6f sides of conductor element 8, and respectively in another side Precalculated position has through hole；Seal 4, is formed as potted circuit part and circuit face 6f, with substantially flat with circuit face 6f Capable interarea 4f；Female type connectors (connector portion 5), corresponding to the respective through hole 21h of multiple lead patterns 23,24,25, Formed from the interarea 4f of seal 4 to circuit face 6f；And press-fit terminals 2, insert terminal 2a, the connector with connector Insertion terminal 2a is fixed on female type connectors (connector portion 5).Connector insertion terminal 2a is characterised by possessing：Anchor portion 2n, The insertion front to female type connectors (connector portion 5) is arranged at, and is fixed on the bottom of female type connectors (connector portion 5) (bottom 5b) and side (cylindrical portion 5hd)；And press-fitting portion 2p, the insertion depth part more shallow than anchor portion 2n is arranged at, and It is connected with the through hole 21h of lead pattern 23,24,25.The power semiconductor device 1 of embodiment 1 is pressed due to this feature Matching terminal 2 has the anchor portion 2n of the bottom (bottom 5b) for being fixed on female type connectors (connector portion 5) and side (cylindrical portion 5hd) The press-fitting portion 2p being connected with the through hole 21h with lead pattern 23,24,25, so press-fit terminals 2 and connector can be improved The confining force of (connector portion 5), can minimize and improve reliability.
Embodiment 2.
14~Figure 18 of reference picture illustrates the power semiconductor device 1 in embodiments of the present invention 2.Figure 14 is to show this The figure of the press-fit terminals of the embodiment 2 of invention, Figure 15 is the figure for showing press-fit terminals and connector portion.Figure 16 is to illustrate figure The figure of the reaction force of 14 press-fit terminals.Power semiconductor device 1 in embodiment 2 only connects compared with embodiment 1 The shape for meeting the terminal fixing part 5c in device portion 5 is different with the anchor portion 2n of press-fit terminals 2 shape.Therefore, should in following only explanation Distinctive points.
The anchor portion 2n of Figure 14 press-fit terminals 2 is by the periphery copper frame different from through hole (anchor portion through hole) 2nh width Constituted Deng metal frame, the jut 2t with three positions to through hole 2nh inner side.In anchor portion, 2n upside has two The jut 2t at position, has the jut 2t at a position in downside.When press-fit terminals 2 are inserted into connector portion 5, anchor Portion 2n compressions as shown in figure 15.In deformation, jut 2t front end contacts with each other and compression respectively.Now, such as Shown in Figure 16, produced from the bottom 5b reaction forces 31 being subject in the depth direction of connector portion 5, but due to jut 2t each other Compression and reaction force 31 is distributed to horizontal direction by the jut 2t of upside, passed to the direction of reaction force 32,33 Pass the cylindrical portion 5hd of connector portion 5.Thus, the power semiconductor device 1 of embodiment 2 can by connector portion 5 to The stress of depth direction is effectively converted into horizontal direction, carries out the anchor portion 2n and cylindrical portion 5hd of press-fit terminals 2 fixation, with The structure of embodiment 1 is more firmly secured compared to anchor portion 2n and cylindrical portion 5hd.
The anchor portion 2n of the press-fit terminals 2 of the power semiconductor device 1 of embodiment 2 is formed as the frame shape that inner side is dug through Shape, and there is the jut 2t to inner side at least three positions in the anchor portion through hole (through hole 2nh) dug through, make It is located at insertion front for one of jut 2t first connecting portion, and first connecting portion is located at the width in anchor portion 2n Center side, the two jut 2ts different from first connecting portion are located at press-fitting portion 2p sides, and jut 2t is located at than first respectively Jut leans on the position of the perimeter sides of anchor portion 2n width, so compared with the structure of embodiment 1, it is possible to increase press-fitting Terminal 2 and the confining force of connector portion 5, can minimize and improve reliability.
Implemented in addition, the face side (the interarea 4f sides of seal 4) as shown in figure 15 in terminal fixing part 5c is provided with The surface tapering 5st being tapered is so that aperture area becomes big.By setting surface tapering 5st, even in press-fit terminals 2 to connector In the case that portion 5 is obliquely inserted, line part 2s side is inserted also along surface tapering 5st, i.e. surface tapering 5st, which is played, to be drawn The effect of guiding element, so the connector portion 5 of embodiment 2 has the effect of correction direction of insertion.Thus, in embodiment 2 In power semiconductor device 1, most press-fit terminals 2 are abreast inserted with connector portion 5 at last, and press-fit bond quality is stable. In addition, the position deviation of the substrate insertion terminal 2b in the seal 4 of the power semiconductor device 1 of embodiment 2 is lowered, Good bond quality can be obtained when installing external substrate.
As long as in addition, jut 2t has two positions as shown in figure 17, it becomes possible to which the bottom 5b with connector portion 5 is connect The stress alternation to depth direction when touching is horizontal direction, and anchor portion 2n is pressed into cylindrical portion 5hd sides, so at least having two The jut 2t at individual position.
Figure 17 is the figure for another press-fit terminals for showing embodiments of the present invention 2, and Figure 18 is the press-fitting end for showing Figure 17 The figure of son and connector portion.Situations of the anchor portion 2n of the press-fit terminals 2 jut 2t for two is being arranged at as shown in figure 17 Under, anchor portion 2n and cylindrical portion 5hd fixed force somewhat declines than jut 2t for the situation of 3, but with the structure of embodiment 1 Compare, anchor portion 2n is more firmly secured with cylindrical portion 5hd.Therefore, the power semiconductor of Figure 17 press-fit terminals 2 is installed Device 1 plays and is provided with the same effect of power semiconductor device 1 of Figure 14 press-fit terminals 2.
The anchor portion 2n of the press-fit terminals 2 of other power semiconductor devices 1 of embodiment 2 is formed as what inner side was dug through Frame shape shape, and have at anchor portion through hole (through hole 2nh) place dug through at least two positions to the raised of inner side Portion 2t, so compared with the structure of embodiment 1, it is possible to increase the confining force of press-fit terminals 2 and connector portion 5, can be small-sized Change and improve reliability.
Embodiment 3.
19~Figure 22 of reference picture illustrates the power semiconductor device 1 in embodiments of the present invention 3.Figure 19 is to show this The figure of the press-fit terminals of the embodiment 3 of invention, Figure 20 is the figure of the press-fit terminals and connector portion that show Figure 19.Figure 21, Figure 22 is the figure of the angle adjustment effect of the substrate insertion terminal for the press-fit terminals for illustrating Figure 19.Figure 21 is shown press-fit terminals 2 Substrate insertion terminal 2b be inserted into state before the through hole 51 of external substrate 50, Figure 22 shows that the substrate of press-fit terminals 2 is inserted Enter the state that terminal 2b is inserted into the through hole 51 of external substrate 50.Power semiconductor device 1 in embodiment 3 is with implementing Mode 1 and 2 is compared, and only the shape of press-fit terminals 2 is different.Therefore, the distinctive points are only illustrated following.
The connector that is located at of the press-fit terminals 2 of embodiment 3 inserts the trunk that terminal 2a and substrate are inserted between terminal 2b The shape in portion is different from another press-fit terminals 2 of the embodiment 2 shown in Figure 17.The trunk of Figure 17 press-fit terminals 2 is only Line part 2s, but the trunk 40 of the press-fit terminals 2 of embodiment 3 has line part 2s and curved bottom surface portion 41.Line part 2s Positioned at the substrate insertion terminal 2b sides of trunk 40, curved bottom surface portion 41 is located at the connector insertion terminal 2a sides of trunk 40. Curved bottom surface portion 41 is prominent to connector insertion terminal 2a sides, that is, bends to convex form.
In addition, in Figure 19~Figure 22, showing the trunk of another press-fit terminals 2 of the embodiment 2 shown in Figure 17 The example of press-fit terminals 2 after portion's change, but the press-fit terminals 2 of embodiment 3 are not limited to this.That is, the press-fitting of embodiment 3 Terminal 2 can also be by the trunk of the press-fit terminals 2 of Fig. 5 in embodiment 1, Figure 14 of embodiment 2 press-fit terminals 2 Press-fit terminals after change.In addition, in embodiment 1 and 2, in trunk, although non-diacritic 40, but embodiment party The line part 2s of press-fit terminals 2 in formula 1 and 2 is also trunk 40.
As shown in figure 20, the press-fit terminals 2 of embodiment 3 are different from the press-fit terminals 2 of embodiment 1 and 2, trunk 40 curved bottom surface portion 41 is not contacted with terminal fixing part bottom surface 5cb with face, but the curved bottom surface portion 41 of trunk 40 and cylinder Contact to shape portion 5hu end, i.e. cylindrical portion 5hu opening portion concentric circles.The trunk of the press-fit terminals 2 of embodiment 3 40 curved bottom surface portion 41 is contacted with cylindrical portion 5hu end, i.e. cylindrical portion 5hu opening portion concentric circles, even if so In the case of substrate insertion terminal 2b is inclined relative to the interarea of power semiconductor device 1, it can also be inserted by substrate Substrate insertion terminal 2b is reliably inserted into through hole 51 when terminal 2b is inserted into the through hole 51 of external substrate 50.Illustrate below real Apply the effect of the press-fit terminals 2 of mode 3.
Figure 21 illustrates press-fit terminals 2 substrate insertion terminal 2b relative to power semiconductor device 1 interarea, That is inclined situations of interarea 4f of seal 4.Terminal root is inserted figure 21 illustrates connector insertion terminal 2a connector Portion 2ac is bent, and trunk 40 and substrate insert through hole center 52 inclined examples of the terminal 2b relative to through hole 51.In addition, The unbent examples of terminal root 2bc are inserted figure 21 illustrates substrate insertion terminal 2b substrate.The press-fitting of embodiment 3 Contact to opening portion concentric circles of the curved bottom surface portion 41 of terminal 2 relative to cylindrical portion 5hu end, i.e. cylindrical portion 5hu, institute With when inclined substrate insertion terminal 2b contacted with the through hole 51 of external substrate 50 when, between curved bottom surface portion 41 and press-fitting portion 2p, For example connector insertion terminal root 2ac is bent, and can adjust substrate insertion terminal 2b angle.
As shown in figure 22, the press-fit terminals 2 of embodiment 3 are inserted into the inboard of through hole 51 as substrate inserts terminal 2b (upside in fig. 22), the curved bottom surface portion 41 of trunk 40 and cylindrical portion 5hu end, i.e. cylindrical portion 5hu opening portion Contact position is moved while adjusting substrate insertion terminal 2b gradient.That is, the press-fit terminals 2 of embodiment 3 are passed through The substrate insertion terminal axle 53 and through hole center at substrate insertion terminal 2b leading section and substrate insertion terminal root 2bc center 52 angle diminishes.When substrate insertion terminal 2b is inserted completely into through hole 51, line part 2s's in trunk 40 is straight Line portion upper surface 2su is contacted with the bottom metal 51a of through hole 51, line part upper surface 2su and through hole 51 bottom metal 51a phases It is mutually parallel.Figure 22 illustrates substrate is inserted into terminal 2b to be inserted into through hole 51 so that substrate inserts terminal 2b substrate insertion The example parallel with the through hole center 52 of through hole 51 of terminal axle 53.In addition, when substrate insertion terminal 2b is inserted into through hole 51, The substrate insertion terminal 2b for the frame shape shape that inside is dug through is pressed against through hole 51 and deformed, but inserts terminal according to the substrate 2b deformation, also substrate insertion terminal axle 53 is not substantially parallel with through hole center 52 sometimes, and is slightly tilted.Even in this In the case of, substrate insertion terminal 2b angle can be also adjusted, so having no problem.That is, substrate can also be inserted terminal 2b Through hole 51 is inserted into so that the through hole center 52 of substrate insertion terminal 2b substrate insertion terminal axle 53 and through hole 51 is almost parallel (substantial parallel).
In the power semiconductor device 1 of embodiment 3, press-fit terminals 2 have in the same manner as embodiment 1 and 2 Be fixed on female type connectors (connector portion 5) bottom (bottom 5b) and side (cylindrical portion 5hd) anchor portion 2n and with lead figure The press-fitting portion 2p of the through hole 21h connections of case 23,24,25, so press-fit terminals 2 and connector (connector portion 5) can be improved Confining force, can minimize and improve reliability.
In the press-fit terminals 2 of embodiment 3, the adjustment substrate insertion when substrate insertion terminal 2b is inserted into through hole 51 Terminal 2b gradient, even if so substrate insertion terminal 2b position is deviateed relative to the through hole center 52 of external substrate 50, Substrate insertion terminal 2b and line part 2s between, such as substrate insertion terminal root 2bc will not also bend and occur to external substrate 50 insertion is bad.Therefore, be provided with the press-fit terminals 2 of embodiment 3 power semiconductor device 1 press-fit terminals 2 to The incidence that the insertion of external substrate 50 is bad is reduced, and yield rate is improved.
Embodiment 4.
23~Figure 29 of reference picture illustrates the power semiconductor device 1 in embodiments of the present invention 4.Figure 23 is to show this The figure of the press-fit terminals of the embodiment 4 of invention, Figure 24 is the figure of the press-fit terminals and the first connector portion that show Figure 23.Figure 25 be the first connector portion and press-fit terminals of Figure 24 from B directions and the figure seen, and Figure 26 is the interarea from seal The figure that side is observed Figure 24 the first connector portion and seen.Figure 27 is the press-fit terminals and the second connector portion for showing Figure 23 Figure.Figure 28 is the second connector portion and press-fit terminals of Figure 27 from B directions and the figure seen, and Figure 29 is from seal The figure that interarea side is observed Figure 27 the second connector portion and seen.Power semiconductor device 1 and embodiment party in embodiment 4 Formula 1 and 2 is compared, and press-fit terminals 2 are different with the shape of connector portion 5.Therefore, the distinctive points are only illustrated following.
First, the shape of the press-fit terminals 2 of embodiment 4 is illustrated.The press-fit terminals 2 of embodiment 4 are created as tabular Press-fit terminals, shown in the shape and Figure 17 of the trunk inserted positioned at connector between terminal 2a and substrate insertion terminal 2b Another press-fit terminals 2 of embodiment 2 are different.The difference of the press-fit terminals 2 of embodiment 4 and Figure 17 press-fit terminals 2 exists In, logical portion 42 in having as the line part 2s of trunk 40, logical portion 42 is dug through into round shape or ellipse inside it in this Shape.As shown in Figure 24, Figure 27, in lead to portion 42 due to the load that is inserted into press-fit terminals 2 during power semiconductor device 1 by Shrivel, deform.In addition, figure 23 illustrates the example with the press-fit terminals 2 for leading to portion 42 in elliptical shape.
The press-fit terminals 2 of embodiment 4 when being inserted into power semiconductor device 1 in lead to portion 42 be flattened so that directly A line portion 2s part extends in the direction of the width, the contacts side surfaces with the terminal fixing part 5c in connector portion 5.Now straight line A portion 2s part is deep into terminal fixing part 5c side and plays Anchoring Effect, so that the line part 2s quilts of press-fit terminals 2 Side fixed to the terminal fixing part 5c in connector portion 5.Press-fit terminals 2 and Figure 17 of embodiment 4 phase of press-fit terminals 2 Than the confining force that can improve press-fit terminals 2 and connector portion 5, it is possible to increase reliability.This is the press-fitting for leading to portion 42 in having The effect of terminal 2.Being provided with the power semiconductor device 1 of the press-fit terminals 2 for the embodiment 4 for leading to portion 42 in having can carry The confining force of high press-fit terminals 2 and connector portion 5, it is possible to increase reliability.
In addition, being shown the trunk of another press-fit terminals 2 of the embodiment 2 shown in Figure 17 in Figure 23~Figure 29 The example of press-fit terminals 2 after change.The press-fit terminals 2 of embodiment 4 are not limited to this or by embodiment 1 Fig. 5 press-fit terminals 2, the press-fit terminals after the trunk change of Figure 14 of embodiment 2 press-fit terminals 2.
Next the shape of the connector portion 5 of embodiment 4 is illustrated.The first connector portion 5 shown in Figure 25 shows Figure 26 Line B-B section, the first connector portion 5 shown in Figure 24 shows the section of Figure 26 line C-C.In Figure 25, Tu26Zhong, The cylindrical portion 5hd of connector portion 5 part narrows from the bottom surface of lead pattern 23 to bottom 5b, and there is bottom 5b width to be pressure Narrow bottom 43a, 43b, 43c, 43d of the thickness of slab degree of matching terminal 2.In fig. 26, show and bottom 5b is provided with 4 narrow bottoms Portion 43a, 43b, 43c, 43d example.Bottom 43a, 43b, 43c, 43d 4 narrow are formed at bottom 5b peripheral part and dotted line four Between each one side of side shape 47.Each narrow bottom 43a, 43b, 43c, 43d are formed as the through hole 21h than lead pattern 23,24,25 Diameter it is narrow.Press-fit terminals 2 in Figure 24 show the example for being inserted into narrow bottom 43a and narrow bottom 43b.In addition, narrow bottom Symbol uniformly use 43, in the case of differentiation use 43a, 43b, 43c, 43d.
First upper opening 44 is formed at the opening of the interarea 4f of seal 4 connector portion 5, the second upper opening 45 It is the opening of the connector portion 5 of surface tapering 5st lower end.Extension opening 46 is formed at extension 5e upper end The opening of the connector portion 5 of portion, i.e. cylindrical portion 5hu upper end.The shape of bottom 5b in first connector portion 5 is by dotted line Quadrangle 47 and bottom 43a, 43b, 43c, 43d 4 narrow altogether obtained from shape.
In the case where being rotatably inserted into press-fit terminals 2 to the direction of arrow 48 or arrow 49 as shown in figure 25, work as pressure The connector insertion terminal 2a of matching terminal 2 is reached with the width in the thickness of slab ts directions of press-fit terminals 2 (left and right directions in fig. 25 Width) mode that narrows change cylindrical portion 5hd when, press-fit terminals 2 it is vertical with plate thickness surface (it can be seen that thickness of slab ts face) Slope along the cylindrical portion 5hd opposed with the front and the back side of front and the back side move, i.e. cylindrical portion 5hd turns into Guiding piece, suppresses press-fit terminals 2 and is rotated up in the side shown in arrow 48 or arrow 49, press-fit terminals 2 are corrected into vertical Direction (bearing of trend of connector portion 5).The connector portion 5 of embodiment 4 can be configured to when the connector of press-fit terminals 2 is inserted When entering terminal 2a arrival narrow bottom 43a, 43b, make press-fit terminals 2 towards vertical direction (bearing of trend of connector portion 5).Cause This, even if possessing the press-fit terminals 2 of power semiconductor device 1 of the embodiment 4 of such connector portion 5 relative to connector The bearing of trend in portion 5 is obliquely inserted into, and can also be configured to the bearing of trend for making press-fit terminals 2 towards connector portion 5.Cause This, the power semiconductor device 1 of embodiment 4 can improve the positional precision of press-fit terminals 2, it is possible to increase finished product Rate.In addition, in press-fit terminals 2, as long as being at least connected with device insertion terminal 2a is formed as tabular.Connector insertion terminal 2a The anchor portion 2n of the press-fit terminals 2 formed with tabular can be fixed on narrower than the through hole 21h of lead pattern 23,24,25 diameter Narrow bottom 43.
In addition, showing that the connector insertion terminal 2a of press-fit terminals 2 is configured at two narrow bottoms in Figure 24~Figure 26 43a, 43b example, but for example can also be the connection that press-fit terminals 2 are configured in the connector portion 5 for possessing bottom 43a 1 narrow Device insertion terminal 2a situation.In the case of the connector portion 5 for possessing bottom 43a 1 narrow, connector insertion terminal 2a One side (connector insertion terminal 2a left side in fig. 24) be inserted into narrow bottom 43a and configure, so can be configured to Make press-fit terminals 2 towards vertical direction (bearing of trend of connector portion 5).In the connector portion 5 for possessing bottom 43a 1 narrow In the case of, the length in width Wa, Wf directions of preferably narrow bottom 43a length, i.e. press-fit terminals 2 (right and left in fig. 26 To length) it is long.The increase of connector portion 5 of narrow bottom 43a length length keeps the connector insertion terminal 2a's of press-fit terminals 2 Area, so compared with the short connector portion 5 of narrow bottom 43a length, can more precisely be configured to make the court of press-fit terminals 2 To vertical direction (bearing of trend of connector portion 5).
Connector portion 5 shown in Figure 27~Figure 29 is to possess the situation of 1 narrow bottom 43 and is with maximum narrow bottom The example of length.The second connector portion 5 shown in Figure 27 shows the section of Figure 29 line C-C, the second connection shown in Figure 28 Device portion 5 shows the section of Figure 29 line B-B.In the second connector portion 5 shown in Figure 28, Figure 29, the cylinder of connector portion 5 A shape portion 5hd part narrows from the bottom surface of lead pattern 23 to bottom 5b, and bottom 5b has the thickness of slab that width is press-fit terminals 2 The narrow bottom 43 of degree.In this case, bottom 5b turns into narrow bottom 43, so bottom 5b can turn into as press-fit terminals 2 The narrow Bottom Shape of the width of thickness of slab degree.
Second connector portion 5 is acted in the same manner as the first connector portion 5, so playing same with the first connector portion 5 The effect of sample.Therefore, even if press-fit terminals 2 are obliquely inserted into relative to the bearing of trend of connector portion 5, possesses the second connection The power semiconductor device 1 of the embodiment 4 in device portion 5 can also be configured to make press-fit terminals 2 towards the second connector portion 5 Bearing of trend.Therefore, the power semiconductor device 1 of embodiment 4 can improve the positional precision of press-fit terminals 2, Neng Gouti High product yield rate.
In the power semiconductor device 1 of embodiment 4, in the same manner as embodiment 1 and 2, press-fit terminals 2 have Be fixed on female type connectors (connector portion 5) bottom (bottom 5b) and side (cylindrical portion 5hd) anchor portion 2n and with lead figure The press-fitting portion 2p of the through hole 21h connections of case 23,24,25, so press-fit terminals 2 and connector (connector portion 5) can be improved Confining force, can minimize and improve reliability.
In addition, in the respective embodiments described above, switch element (transistor) 11 or the function of rectifier cell 12 are used as Power semiconductor element 8 can also be the general element by base material of silicon wafer, but can use carborundum in the present invention (SiC), the wide so-called wide band gap semiconducter material of band gap gap-ratio silicon as gallium nitride (GaN) based material or diamond Material.Using being formed using wide bandgap semiconductor materials, with electric current tolerance and partly leading for high temperature action can carried out In the case of volume elements part, there is especially significant effect in power semiconductor device 1 of the invention.Particularly preferred for using carbon The power semiconductor element of SiClx.It need not be particularly limited to as device category, besides igbts or MOSFET (Metal Oxide Semiconductor Field-Effect-Transistor, metal oxide semiconductor field-effect is brilliant Body pipe), as long as other vertical semiconductor elements.
The switch element 11 or the (power semiconductor in each embodiment of rectifier cell 12 formed by wide band gap semiconducter Element 8) power consumption it is lower than the element formed by silicon, so the efficient of switch element 11 or rectifier cell 12 can be realized Change, or even the high efficiency of power semiconductor device 1 can be realized.And then, resistance to pressure is high, and allowable current density is also high, so The miniaturization of switch element 11 or rectifier cell 12 can be realized, by using the switch element 11 of these miniaturizations or rectification member Part 12, power semiconductor device 1 can also realize miniaturization.Other heat resistance is high, so high temperature action can be carried out, moreover it is possible to Enough miniaturizations for realizing the heat release fin (cooler) for being installed on radiator and the air cooling in water cooling portion, so electric power can be used Semiconductor device 1 is more minimized.
Therefore, it is that miniaturization institute is required by the construction that interarea 4f sides are formed at for the connector portion 5 with external electrical connections Construction.Now, as described above shown in each embodiment, it will connect as the parent form for connecting the terminal as press-fit terminals 2 The connector portion 5 for connecing device is formed as connecting with the through hole 21h in lead frame 21, so the positional precision of each connector portion 5 Height, tails off to the stress of electrical connection, so reliability can be improved.That is, the effect by playing the present invention, can live With the characteristic of wide band gap semiconducter.
, can also be by addition, can both form switch element 11 and rectifier cell 12 this two side by wide band gap semiconducter The element of wide band gap semiconducter formation any one party.
In addition, the forming method of the seal as embodiment 1~4, is not limited to transfer modling or is molded into Type or compression forming, on resin, same effect can be also obtained even if using thermosetting resin or thermoplastic resin.Make For object encapsulation body, construction of the present invention is not limited to, as long as the packaging body with lead frame and substrate, it becomes possible to obtain same Effect.Terminal direction is not limited to the interarea direction of packaging body, and can be by making the lead frame of inside vertically bend To deform, make press-fit terminals prominent to side surface direction.Packaging body in addition to projecting from the surface terminal, even make terminal from Side prominent DIP (Dual Inline Package, dual-inline package body), SIP (Single Inline Package, single in-line packages body) etc. can also obtain same effect.In addition, the present invention is in the range of no contradiction The content of each embodiment can be freely combined, or each embodiment is suitably deformed, omitted.

Claims (20)

1. a kind of power semiconductor device, it is characterised in that possess：
Power semiconductor element, is engaged with the circuit face of circuit substrate；
Multiple lead patterns, a side of each lead pattern including the power semiconductor element with being arranged at the electricity Any circuit block connection in the circuit block of road surface side, and there is through hole in the precalculated position of another side；
Seal, is formed as sealing the circuit block and the circuit face and having the master almost parallel with the circuit face Face；
Female type connectors, the through hole with each lead pattern of the multiple lead pattern is corresponding, from the master of the seal Formed towards the circuit face；And
Press-fit terminals, terminal is inserted with connector, and connector insertion terminal is fixed on the female type connectors,
The connector insertion terminal has：
Anchor portion, is arranged at the insertion front to the female type connectors, and be fixed on the female type connectors bottom and Sideways；And
Press-fitting portion, is arranged at the insertion depth part more shallow than the anchor portion, and connect with the through hole of the lead pattern Connect.
2. power semiconductor device according to claim 1, it is characterised in that
In the connector insertion terminal of the press-fit terminals, the width of the press-fitting portion is formed as than the through hole Diameter is big, and the width in the anchor portion is formed as smaller than the diameter of the through hole.
3. the power semiconductor device according to claims 1 or 2, it is characterised in that
The anchor portion is formed as the frame shape shape that inner side is dug through, and at least with two at the anchor portion through hole dug through The jut to inner side at position.
4. the power semiconductor device according to claims 1 or 2, it is characterised in that
The anchor portion is formed as the frame shape shape that inner side is dug through, and at least with three at the anchor portion through hole dug through The jut to inner side at position,
It is located at insertion front as the first connecting portion of a jut in the jut, and the first connecting portion is located at The center side of the width in the anchor portion,
Two protruding parts different from the first connecting portion in the press-fitting portion side, and the jut be located at respectively than Preceding first connecting portion more leans on the position of the perimeter sides of the width in the anchor portion.
5. the power semiconductor device described in any one in Claims 1-4, it is characterised in that
The female type connectors possess：Interarea opening portion, in the side shape of the seal interarea of the interarea as the seal Diameter as than the through hole is big；And cylindrical portion, more turn into than the interarea opening portion by circuit surface side landform It is concentric and identical with the insertion bore dia with the through hole,
The press-fit terminals have trunk in the side opposite with the insertion front to the female type connectors, the trunk It is bigger than the width that the connector inserts terminal,
The master of the trunk bottom surface of the circuit surface side of the trunk and the circuit surface side in the interarea opening portion Face opening portion bottom surface is contacted.
6. the power semiconductor device described in any one in Claims 1-4, it is characterised in that
The female type connectors possess：Interarea opening portion, in the side shape of the seal interarea of the interarea as the seal Diameter as than the through hole is big；And cylindrical portion, more turn into than the interarea opening portion by circuit surface side landform It is concentric and identical with the insertion bore dia with the through hole,
The press-fit terminals have trunk in the side opposite with the insertion front to the female type connectors, the trunk It is bigger than the width that the connector inserts terminal,
The curved bottom surface portion for setting the oriented female type connectors side to protrude in the female type connectors side of the trunk, institute State the ends contact in curved bottom surface portion and the seal interarea side of the cylindrical portion.
7. the power semiconductor device described in any one in Claims 1-4, it is characterised in that
The female type connectors possess：Interarea opening portion, in the side shape of the seal interarea of the interarea as the seal Diameter as than the through hole is big；First cylindrical portion, more turns into than the interarea opening portion by circuit surface side landform It is concentric and identical with the insertion bore dia with the through hole；And second cylindrical portion, it is arranged at than first cylindrical portion More lean on the circuit surface side position, and a part have with the through hole identical diameter,
The press-fit terminals have trunk in the side opposite with the insertion front to the female type connectors, the trunk It is bigger than the width that the connector inserts terminal,
The interarea of the trunk bottom surface of the circuit surface side of the trunk and the circuit surface side of the interarea opening portion Opening portion bottom surface is contacted.
8. the power semiconductor device described in any one in Claims 1-4, it is characterised in that
The female type connectors possess：Interarea opening portion, in the side shape of the seal interarea of the interarea as the seal Diameter as than the through hole is big；First cylindrical portion, more turns into than the interarea opening portion by circuit surface side landform It is concentric and identical with the insertion bore dia with the through hole；And second cylindrical portion, it is arranged at than first cylindrical portion More lean on the circuit surface side position, and a part have with the through hole identical diameter,
The press-fit terminals have trunk in the side opposite with the insertion front to the female type connectors, the trunk It is bigger than the width that the connector inserts terminal,
The curved bottom surface portion for setting the oriented female type connectors side to protrude in the female type connectors side of the trunk, institute State the ends contact in curved bottom surface portion and the seal interarea side of first cylindrical portion.
9. the power semiconductor device according to claim 5 or 6, it is characterised in that
The press-fit terminals are provided with during inner side is dug through in the trunk leads to portion.
10. the power semiconductor device according to claim 7 or 8, it is characterised in that
The press-fit terminals are provided with during inner side is dug through in the trunk leads to portion.
11. the power semiconductor device described in any one in Claims 1-4, it is characterised in that
The connector insertion terminal of the press-fit terminals is formed as tabular,
In the female type connectors, and the front vertical with plate thickness surface and the back side of connector insertion terminal are opposed , the part of the sides of the female type connectors narrows to the bottom.
12. the power semiconductor device described in any one in claim 7,8,10, it is characterised in that
The connector insertion terminal of the press-fit terminals is formed as tabular,
In the female type connectors, and the front vertical with plate thickness surface and the back side of connector insertion terminal are opposed , the part of the sides of the female type connectors narrows to the bottom.
13. power semiconductor device according to claim 11, it is characterised in that
The female type connectors have the narrow narrow bottom of the diameter of the through hole than the lead pattern, the connection at the bottom The narrow bottom is fixed in the anchor portion of device insertion terminal.
14. power semiconductor device according to claim 12, it is characterised in that
The female type connectors have the narrow narrow bottom of the diameter of the through hole than the lead pattern, the connection at the bottom The narrow bottom is fixed in the anchor portion of device insertion terminal.
15. the power semiconductor device described in any one in claim 5 to 10, it is characterised in that
The female type connectors have surface tapering, and the surface tapering is in the interarea side of the seal of the interarea opening portion Be formed as conical by its shape.
16. the power semiconductor device according to claim 12 or 14, it is characterised in that
The female type connectors have surface tapering, and the surface tapering is in the interarea side of the seal of the interarea opening portion Be formed as conical by its shape.
17. the power semiconductor device described in any one in claim 1 to 10,15, it is characterised in that
In the female type connectors, the bottom and the side of the female type connectors are by the bottom surface tapering with conical by its shape Connection.
18. the power semiconductor device described in any one in claim 1 to 10,15, it is characterised in that
In the female type connectors, there are the bottom surface rounded portions of toroidal at the bottom of the female type connectors.
19. the power semiconductor device described in any one in claim 1 to 18, it is characterised in that
The power semiconductor element is formed by wide bandgap semiconductor materials.
20. power semiconductor device according to claim 19, it is characterised in that
The wide bandgap semiconductor materials are any materials in carborundum, gallium nitride material or diamond.
CN201680009619.6A 2015-05-21 2016-05-09 Power semiconductor device Active CN107210279B (en)

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DE112016002302B4 (en) 2022-05-05
JPWO2016185920A1 (en) 2017-09-28

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