WO2016176876A1 - Oled显示装置 - Google Patents

Oled显示装置 Download PDF

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Publication number
WO2016176876A1
WO2016176876A1 PCT/CN2015/079380 CN2015079380W WO2016176876A1 WO 2016176876 A1 WO2016176876 A1 WO 2016176876A1 CN 2015079380 W CN2015079380 W CN 2015079380W WO 2016176876 A1 WO2016176876 A1 WO 2016176876A1
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Prior art keywords
disposed
electrode
substrate
layer
conductive layer
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PCT/CN2015/079380
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English (en)
French (fr)
Inventor
李文辉
史文
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/781,591 priority Critical patent/US10003042B2/en
Publication of WO2016176876A1 publication Critical patent/WO2016176876A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the field of flat panel displays, and more particularly to an OLED display device.
  • the active matrix flat panel display has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • organic light-emitting diode (OLED) display technology is a promising flat panel display technology, which has excellent display performance, especially self-illumination, simple structure, ultra-thin and light, fast response.
  • Wide viewing angle, low power consumption and flexible display, etc. known as “dream display”, coupled with investment in production equipment is much smaller than thin film transistor type liquid crystal display (TFT-LCD, Thin Film Transistor-Liquid Crystal Display ), has won the favor of major display manufacturers, has become the main force of the third generation of display devices in the field of display technology.
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • an existing OLED display device comprising an upper substrate 200, a lower substrate 400, and a sealant 600 sealingly connecting the upper substrate 200 and the lower substrate 400;
  • the lower substrate 400 includes a first electrode 450 and a second electrode 480 disposed on the first electrode 450 and located on the top of the lower substrate 400.
  • the upper substrate 200 is only used as a package cover to isolate water vapor, and the first electrode 450 serves only as a first electrode 450.
  • the pixel electrode (anode) and the second electrode 480 (cathode) are generally thin, especially in the top-emitting OLED, and the second electrode 450 needs to be made into a transparent electrode, so that it needs to be thinner to have better light transmittance.
  • An object of the present invention is to provide an OLED display device which can reduce the resistance of the second electrode, improve the uniformity of the in-plane voltage, and improve the brightness unevenness of the panel, Mura and the like.
  • the present invention provides an OLED display device including an upper substrate, a lower substrate, and a sealant for sealing and connecting the upper substrate and the lower substrate;
  • the upper substrate includes a first substrate and an auxiliary conductive layer disposed on the first substrate;
  • the lower substrate includes a second substrate, a TFT layer disposed on the second substrate, a first insulating layer disposed on the TFT layer, a second insulating layer disposed on the first insulating layer, and disposed on the second insulating layer a first electrode, a pixel defining layer disposed on the second insulating layer and the first electrode, an OLED light emitting layer disposed on the first electrode, and a second electrode disposed on the pixel defining layer and the OLED emitting layer;
  • the upper substrate is disposed above the lower substrate, and a side of the upper substrate on which the auxiliary conductive layer is disposed is disposed opposite to a side of the lower substrate on which the second electrode is disposed, and the auxiliary conductive layer is The second electrode is in direct contact and electrically connected.
  • the upper substrate further includes a first photoresist spacer disposed on the first substrate, the auxiliary conductive layer is disposed on the first photoresist spacer and the first substrate, and covers the first light a barrier spacer, wherein a region of the auxiliary conductive layer covering the first photoresist spacer is in direct contact with a second electrode on an upper surface of the lower substrate, such that the second electrode and the auxiliary conductive layer are electrically Sexual connection.
  • the second substrate further includes a second photoresist spacer disposed on the pixel defining layer, wherein the second electrode is disposed on the second photoresist spacer, the pixel defining layer, and the OLED emitting layer, and is covered The second photoresist spacer, wherein a region of the second electrode covering the second photoresist spacer is in direct contact with an auxiliary conductive layer on a lower surface of the upper substrate, such that the second electrode The auxiliary conductive layer is electrically connected.
  • the upper substrate further includes a first photoresist spacer disposed on the first substrate, the auxiliary conductive layer is disposed on the first photoresist spacer and the first substrate, and covers the first light
  • the second substrate further includes a second photoresist spacer disposed on the pixel defining layer, wherein the second electrode is disposed on the second photoresist spacer, the pixel defining layer, and the OLED emitting layer And covering the second photoresist spacer, wherein the first photoresist spacer in the upper substrate is disposed corresponding to the second photoresist spacer in the lower substrate, and the auxiliary conductive layer is covered
  • the region of the first photoresist spacer is in direct contact with the region of the second electrode that covers the second photoresist spacer, such that the second electrode and the auxiliary conductive layer are electrically connected.
  • the auxiliary conductive layer is a one-sided structure.
  • the auxiliary conductive layer is a continuous network structure.
  • the auxiliary conductive layer is composed of a plurality of discontinuous portions.
  • the auxiliary conductive layer is a transparent conductive layer or an opaque conductive layer.
  • the material of the auxiliary conductive layer is indium tin oxide, indium gallium zinc oxide, tin oxide, copper, aluminum, chromium, titanium or molybdenum.
  • a first via hole is disposed above the corresponding TFT layer on the first insulating layer and the second insulating layer, and the first electrode is connected to the TFT layer via a first via hole;
  • a second via is disposed above the corresponding first electrode on the defining layer, and the OLED light emitting layer is located in the second pass Inside the hole.
  • the present invention also provides an OLED display device comprising an upper substrate, a lower substrate, and a sealant for sealingly connecting the upper substrate and the lower substrate;
  • the upper substrate includes a first substrate and an auxiliary conductive layer disposed on the first substrate;
  • the lower substrate includes a second substrate, a TFT layer disposed on the second substrate, a first insulating layer disposed on the TFT layer, a second insulating layer disposed on the first insulating layer, and disposed on the second insulating layer a first electrode, a pixel defining layer disposed on the second insulating layer and the first electrode, and an OLED emitting layer disposed on the first electrode, and a second electrode disposed on the pixel defining layer and the OLED emitting layer;
  • the upper substrate is disposed above the lower substrate, and a side of the upper substrate on which the auxiliary conductive layer is disposed is disposed opposite to a side of the lower substrate on which the second electrode is disposed, and the auxiliary conductive layer is The second electrode is in direct contact and electrically connected;
  • the first substrate further includes a first photoresist spacer disposed on the first substrate, wherein the auxiliary conductive layer is disposed on the first photoresist spacer and the first substrate, and covers the first a photoresist spacer, wherein a region of the auxiliary conductive layer covering the first photoresist spacer is in direct contact with a second electrode on an upper surface of the lower substrate, such that the second electrode and the auxiliary conductive layer Realize electrical connection;
  • auxiliary conductive layer is a one-sided structure
  • a first via hole is disposed above the corresponding TFT layer on the first insulating layer and the second insulating layer, and the first electrode is connected to the TFT layer via the first via hole;
  • a second via is disposed above the corresponding first electrode on the pixel defining layer, and the OLED light emitting layer is located in the second via.
  • the present invention provides an OLED display device by providing an auxiliary conductive layer on a lower surface of an upper substrate, the auxiliary conductive layer being in direct contact with a second electrode on an upper surface of the lower substrate and electrically
  • the sexual connection can increase the conductivity of the second electrode, reduce the resistance of the second electrode, make the in-plane voltage uniform, improve the display uniformity, reduce the uneven brightness of the panel, Mura, etc., and can reduce the thickness of the second electrode.
  • the second electrode material is saved, and the light transmittance of the second electrode is improved.
  • FIG. 1 is a schematic structural view of an OLED display device in the prior art
  • FIG. 2 is a schematic structural view of a first embodiment of an OLED display device according to the present invention.
  • FIG. 3 is a schematic structural view of a second embodiment of an OLED display device according to the present invention.
  • FIG. 4 is a schematic structural view of a third embodiment of an OLED display device according to the present invention.
  • FIG. 5 is a schematic structural view of an auxiliary conductive layer in an OLED display device of the present invention.
  • FIG. 6 is another schematic structural view of an auxiliary conductive layer in an OLED display device of the present invention.
  • FIG. 7 is still another schematic structural view of an auxiliary conductive layer in the OLED display device of the present invention.
  • the present invention provides an OLED display device comprising an upper substrate 20, a lower substrate 40, and a sealant 60 sealingly connecting the upper substrate 20 and the lower substrate 40;
  • the upper substrate 20 includes a first substrate 21 and an auxiliary conductive layer 23 disposed on the first substrate 21;
  • the lower substrate 40 includes a second substrate 41, a TFT layer 42 disposed on the second substrate 41, a first insulating layer 43 disposed on the TFT layer 42, and a second insulating layer 44 disposed on the first insulating layer 43.
  • a first electrode 45 disposed on the second insulating layer 44, a pixel defining layer 46 disposed on the second insulating layer 44 and the first electrode 45, an OLED light emitting layer 47 disposed on the first electrode 45, and a pixel defining layer 46 and a second electrode 48 on the OLED light emitting layer 47;
  • a first via hole 434 is disposed above the corresponding TFT layer 42 on the first insulating layer 43 and the second insulating layer 44, and the first electrode 45 passes through the first via hole 434 and the TFT.
  • the layer 42 is connected to each other;
  • a second via 465 is disposed on the pixel defining layer 46 corresponding to the first electrode 45, and the OLED light emitting layer 47 is located in the second via 465;
  • the upper substrate 20 is disposed above the lower substrate 40, and a side of the upper substrate 20 on which the auxiliary conductive layer 23 is disposed is disposed opposite to a side of the lower substrate 40 on which the second electrode 48 is disposed.
  • the auxiliary conductive layer 23 is in direct contact with the second electrode 48 and is electrically connected.
  • the first substrate 21 and the second substrate 41 may be a glass substrate, a plastic substrate, or an aluminum plate, and the materials of the first substrate 21 and the second substrate 41 may be the same or different.
  • At least one of the first substrate 21 and the second substrate 41 is transparent.
  • the first substrate 21 and the second substrate 41 are both glass substrates.
  • the sealant 60 is a UV glue.
  • the first substrate 20 further includes a first photoresist spacer 25 disposed on the first substrate 21, and the first photoresist spacer 25 is a bump disposed on the first substrate 21, and has no conductivity.
  • the auxiliary conductive layer 23 is disposed on the first photoresist spacer 25 and the first substrate 21 and covers the first photoresist spacer 25, wherein the auxiliary conductive layer 23 covers the first A region of a photoresist spacer 25 is in direct contact with the second electrode 48 on the upper surface of the lower substrate 40 such that the second electrode 48 is electrically connected to the auxiliary conductive layer 23.
  • the lower substrate 40 further includes a second photoresist spacer 49 disposed on the pixel defining layer 46.
  • the two photoresist spacers 49 are bumps provided on the first substrate 21, which are not electrically conductive.
  • the second electrode 48 is disposed on the second photoresist spacer 49, the pixel defining layer 46, and the OLED light emitting layer 47, and covers the second photoresist spacer 49, wherein the second electrode A region of the 48 covering the second photoresist spacer 49 is in direct contact with the auxiliary conductive layer 23 on the lower surface of the upper substrate 20, so that the second electrode 48 and the auxiliary conductive layer 23 are electrically connected.
  • the upper substrate 20 further includes a first photoresist spacer 25 disposed on the first substrate 21 , the auxiliary The conductive layer 23 is disposed on the first photoresist spacer 25 and the first substrate 21 and covers the first photoresist spacer 25; the lower substrate 40 further includes a pixel defining layer 46. a second photoresist spacer 49, the second electrode 48 is disposed on the second photoresist spacer 49, the pixel defining layer 46, and the OLED light emitting layer 47, and covers the second photoresist spacer 49.
  • the first photoresist spacer 25 in the upper substrate 20 is disposed corresponding to the second photoresist spacer 49 in the lower substrate 40, and the auxiliary conductive layer 23 covers the first photoresist gap.
  • the region of the object 25 is in direct contact with the region of the second electrode 48 that covers the second photoresist spacer 49 such that the second electrode 48 is electrically connected to the auxiliary conductive layer 23.
  • the first photoresist spacer 25 and the second photoresist spacer 49 are both cylindrical structures such as a cylinder or a prism.
  • the material of the first photoresist spacer 25 and the second photoresist spacer 49 is a non-conductive organic photoresist or inorganic material, preferably, the first photoresist spacer 25 and the second photoresist
  • the material of the spacers 49 are all organic photoresists; the first photoresist spacers 25 and the second photoresist spacers 49 are made of organic photoresist, the process is mature, simple, and can be mass-produced, only a process of yellow light is needed. low cost.
  • the auxiliary conductive layer 23 may be a transparent conductive layer or an opaque conductive layer; preferably, the auxiliary conductive layer 23 is a transparent conductive layer.
  • the material of the auxiliary conductive layer 23 is indium tin oxide, indium gallium zinc oxide, tin oxide, copper, aluminum, chromium, titanium or molybdenum.
  • the auxiliary conductive layer 23/23'/23" may have various shapes.
  • the auxiliary conductive layer 23 is a full-surface structure; as shown in FIG.
  • the auxiliary conductive layer 23' is a continuous mesh structure; as shown in FIG. 6, the auxiliary conductive layer 23" is composed of a plurality of discontinuous portions.
  • the present invention provides an OLED display device by providing an auxiliary conductive layer on a lower surface of an upper substrate, the auxiliary conductive layer being in direct contact with a second electrode on an upper surface of the lower substrate and electrically
  • the connection can increase the conductivity of the second electrode, reduce the resistance of the second electrode, make the in-plane voltage uniform, improve the display uniformity, reduce the uneven brightness of the panel, Mura, etc., and can reduce the thickness of the second electrode, saving
  • the second electrode material improves the light transmittance of the second electrode.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

提供一种OLED显示装置。通过在上基板(20)的下表面设置辅助导电层(23)，辅助导电层与位于下基板(40)的上表面的第二电极(48)直接接触并且电性连接，可以增加第二电极的导电能力，减少第二电极的电阻，使得面内电压均匀，提高显示均一性，减少面板亮度不均、Mura等问题，并且可减薄第二电极的厚度，节省第二电极材料，提高第二电极的透光性。

Description

OLED显示装置 技术领域
本发明涉及平面显示器领域，尤其涉及一种OLED显示装置。
背景技术
主动矩阵平面显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。其中，有机发光二极管(organic light-emitting diode，OLED)显示技术是一种极具发展前景的平板显示技术，它具有十分优异的显示性能，特别是自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”，再加上其生产设备投资远小于薄膜晶体管型液晶显示屏(TFT-LCD，Thin Film Transistor-Liquid Crystal Display)，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。目前OLED已处于大规模量产的前夜，随着研究的进一步深入，新技术的不断涌现，OLED显示器件必将有一个突破性的发展。
如图1所示，为现有的一种OLED显示装置，其包括上基板200、下基板400、及密封连接上基板200与下基板400的封框胶600；
所述下基板400包括第一电极450和设于第一电极450上并位于下基板400顶部的第二电极480所述上基板200仅作为封装盖板用途以隔绝水汽，第一电极450仅作为像素电极(阳极)，第二电极480(阴极)一般较薄，尤其在顶发光型OLED中，第二电极450需做成透明电极，因此需要做到更薄以具有较好的透光性，由于第二电极450越薄，其电阻越大，尤其在大尺寸OLED显示装置中，有可能造成面内电压不均，影响显示均一性，造成亮度不均、Mura(显示器亮度不均匀造成各种痕迹的现象)等问题。
发明内容
本发明的目的在于提供一种OLED显示装置，可减小第二电极的电阻，提高面内电压的均匀性，改善面板亮度不均、Mura等问题。
为实现上述目的，本发明提供一种OLED显示装置，包括上基板、下基板、及密封连接上基板与下基板的封框胶；
所述上基板包括第一基板、及设于第一基板上的辅助导电层；
所述下基板包括第二基板、设于第二基板上的TFT层、设于TFT层上的第一绝缘层、设于第一绝缘层上的第二绝缘层、设于第二绝缘层上的第一电极、设于第二绝缘层与第一电极上的像素定义层、设于第一电极上的OLED发光层、及设于像素定义层与OLED发光层上的第二电极；
所述上基板设于所述下基板的上方，且所述上基板上设有辅助导电层的一侧与所述下基板上设有第二电极的一侧相向设置，所述辅助导电层与所述第二电极直接接触并且电性连接。
所述上基板中还包括设于第一基板上的第一光阻间隙物，所述辅助导电层设于所述第一光阻间隙物与第一基板之上，且覆盖所述第一光阻间隙物，其中，所述辅助导电层上覆盖所述第一光阻间隙物的区域与位于所述下基板上表面的第二电极直接接触，使得所述第二电极与辅助导电层实现电性连接。
所述下基板中还包括设于像素定义层上的第二光阻间隙物，所述第二电极设于所述第二光阻间隙物、像素定义层、及OLED发光层之上，且覆盖所述第二光阻间隙物，其中，所述第二电极上覆盖所述第二光阻间隙物的区域与位于所述上基板下表面的辅助导电层直接接触，使得所述第二电极与辅助导电层实现电性连接。
所述上基板中还包括设于第一基板上的第一光阻间隙物，所述辅助导电层设于所述第一光阻间隙物与第一基板之上，且覆盖所述第一光阻间隙物；所述下基板中还包括设于像素定义层上的第二光阻间隙物，所述第二电极设于所述第二光阻间隙物、像素定义层、及OLED发光层之上，且覆盖所述第二光阻间隙物，其中，所述上基板中的第一光阻间隙物与所述下基板中的第二光阻间隙物对应设置，所述辅助导电层上覆盖所述第一光阻间隙物的区域与所述第二电极上覆盖所述第二光阻间隙物的区域直接接触，使得所述第二电极与辅助导电层实现电性连接。
所述辅助导电层为一整面的结构。
所述辅助导电层为连续的网状结构。
所述辅助导电层为多个不连续的部分所组成。
所述辅助导电层为透明导电层或不透明导电层。
所述辅助导电层的材料为氧化铟锡、铟镓氧化锌、氧化锡、铜、铝、铬、钛或钼。
所述下基板中，所述第一绝缘层与第二绝缘层上对应TFT层上方设有第一过孔，所述第一电极经由第一过孔与所述TFT层相连接；所述像素定义层上对应第一电极上方设有第二过孔，所述OLED发光层位于该第二过 孔内。
本发明还提供一种OLED显示装置，包括上基板、下基板、及密封连接上基板与下基板的封框胶；
所述上基板包括第一基板、及设于第一基板上的辅助导电层；
所述下基板包括第二基板、设于第二基板上的TFT层、设于TFT层上的第一绝缘层、设于第一绝缘层上的第二绝缘层、设于第二绝缘层上的第一电极、设于第二绝缘层与第一电极上的像素定义层、及设于第一电极上的OLED发光层、设于像素定义层与OLED发光层上的第二电极；
所述上基板设于所述下基板的上方，且所述上基板上设有辅助导电层的一侧与所述下基板上设有第二电极的一侧相向设置，所述辅助导电层与所述第二电极直接接触并且电性连接；
其中，所述上基板中还包括设于第一基板上的第一光阻间隙物，所述辅助导电层设于所述第一光阻间隙物与第一基板之上，且覆盖所述第一光阻间隙物，其中，所述辅助导电层上覆盖所述第一光阻间隙物的区域与位于所述下基板上表面的第二电极直接接触，使得所述第二电极与辅助导电层实现电性连接；
其中，所述辅助导电层为一整面的结构；
其中，所述下基板中，所述第一绝缘层与第二绝缘层上对应TFT层上方设有第一过孔，所述第一电极经由第一过孔与所述TFT层相连接；所述像素定义层上对应第一电极上方设有第二过孔，所述OLED发光层位于该第二过孔内。
本发明的有益效果：本发明提供的一种OLED显示装置，通过在上基板的下表面设置辅助导电层，所述辅助导电层与位于所述下基板的上表面的第二电极直接接触并且电性连接，可以增加第二电极的导电能力，减少第二电极的电阻，使得面内电压均匀，提高显示均一性，减少面板亮度不均、Mura等问题，并且可减薄第二电极的厚度，节省第二电极材料，提高第二电极的透光性。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有技术中一种OLED显示装置的结构示意图；
图2为本发明OLED显示装置第一实施例的结构示意图；
图3为本发明OLED显示装置第二实施例的结构示意图；
图4为本发明OLED显示装置第三实施例的结构示意图；
图5为本发明OLED显示装置中辅助导电层的一种结构示意图；
图6为本发明OLED显示装置中辅助导电层的另一种结构示意图；
图7为本发明OLED显示装置中辅助导电层的再一种结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2至图4，本发明提供一种OLED显示装置，包括上基板20、下基板40、及密封连接上基板20与下基板40的封框胶60；
所述上基板20包括第一基板21、及设于第一基板21上的辅助导电层23；
所述下基板40包括第二基板41、设于第二基板41上的TFT层42、设于TFT层42上的第一绝缘层43、设于第一绝缘层43上的第二绝缘层44、设于第二绝缘层44上的第一电极45、设于第二绝缘层44与第一电极45上的像素定义层46、设有第一电极45上的OLED发光层47、及设于像素定义层46与OLED发光层47上的第二电极48；
所述下基板40中，所述第一绝缘层43与第二绝缘层44上对应TFT层42上方设有第一过孔434，所述第一电极45经由第一过孔434与所述TFT层42相连接；所述像素定义层46上对应第一电极45上方设有第二过孔465，所述OLED发光层47位于该第二过孔465内；
所述上基板20设于所述下基板40的上方，且所述上基板20上设有辅助导电层23的一侧与所述下基板40上设有第二电极48的一侧相向设置，所述辅助导电层23与所述第二电极48直接接触并且电性连接。
具体的，所述第一基板21与第二基板41可以为玻璃基板、塑料基板、或者铝板，所述第一基板21与第二基板41的材料可以相同或者不同。
所述第一基板21与第二基板41中至少有一个是透明的。
优选的，所述第一基板21与第二基板41均为玻璃基板。
所述封框胶60为UV胶。
请参阅图2，为本发明OLED显示装置的第一实施例，在该实施例中， 所述上基板20中还包括设于第一基板21上的第一光阻间隙物25，所述第一光阻间隙物25是设于第一基板21上的凸起，其不具有导电性。所述辅助导电层23设于所述第一光阻间隙物25与第一基板21之上，且覆盖所述第一光阻间隙物25，其中，所述辅助导电层23上覆盖所述第一光阻间隙物25的区域与位于所述下基板40上表面的第二电极48直接接触，使得所述第二电极48与辅助导电层23实现电性连接。
请参阅图3，为本发明OLED显示装置的第二实施例，在该实施例中，所述下基板40中还包括设于像素定义层46上的第二光阻间隙物49，所述第二光阻间隙物49是设于第一基板21上的凸起，其不具有导电性。所述第二电极48设于所述第二光阻间隙物49、像素定义层46、及OLED发光层47之上，且覆盖所述第二光阻间隙物49，其中，所述第二电极48上覆盖所述第二光阻间隙物49的区域与位于所述上基板20下表面的辅助导电层23直接接触，使得所述第二电极48与辅助导电层23实现电性连接。
请参阅图4，为本发明OLED显示装置的第三实施例，在该实施例中，所述上基板20中还包括设于第一基板21上的第一光阻间隙物25，所述辅助导电层23设于所述第一光阻间隙物25与第一基板21之上，且覆盖所述第一光阻间隙物25；所述下基板40中还包括设于像素定义层46上的第二光阻间隙物49，所述第二电极48设于所述第二光阻间隙物49、像素定义层46、及OLED发光层47之上，且覆盖所述第二光阻间隙物49，其中，所述上基板20中的第一光阻间隙物25与所述下基板40中的第二光阻间隙物49对应设置，所述辅助导电层23上覆盖所述第一光阻间隙物25的区域与所述第二电极48上覆盖所述第二光阻间隙物49的区域直接接触，使得所述第二电极48与辅助导电层23实现电性连接。
上述第一至第三实施例中，所述第一光阻间隙物25与第二光阻间隙物49均为柱体结构，如圆柱或棱柱等。
具体的，所述第一光阻间隙物25与第二光阻间隙物49的材料为不导电的有机光阻或无机材料，优选地，所述第一光阻间隙物25与第二光阻间隙物49的材料均为有机光阻；所述第一光阻间隙物25与第二光阻间隙物49采用有机光阻制作，制程成熟、简单，可量产，只需黄光一道工序，成本低。
所述辅助导电层23可以是透明导电层或不透明导电层；优选地，所述辅助导电层23为透明导电层。
所述辅助导电层23的材料为氧化铟锡、铟镓氧化锌、氧化锡、铜、铝、铬、钛或钼。
如图4-6所示，所述辅助导电层23/23’/23”可以具有多种形状，如图4所示，所述辅助导电层23为一整面的结构；如图5所示，所述辅助导电层23’为连续的网状结构；如图6所示，所述辅助导电层23”由多个不连续的部分组成。
综上所述，本发明提供的一种OLED显示装置，通过在上基板的下表面设置辅助导电层，所述辅助导电层与位于所述下基板的上表面的第二电极直接接触并且电性连接，可以增加第二电极的导电能力，减少第二电极的电阻，使得面内电压均匀，提高显示均一性，减少面板亮度不均、Mura等问题，并且可减薄第二电极的厚度，节省第二电极材料，提高第二电极的透光性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种OLED显示装置，包括上基板、下基板、及密封连接上基板与下基板的封框胶；
    所述上基板包括第一基板、及设于第一基板上的辅助导电层；
    所述下基板包括第二基板、设于第二基板上的TFT层、设于TFT层上的第一绝缘层、设于第一绝缘层上的第二绝缘层、设于第二绝缘层上的第一电极、设于第二绝缘层与第一电极上的像素定义层、及设于第一电极上的OLED发光层、设于像素定义层与OLED发光层上的第二电极；
    所述上基板设于所述下基板的上方，且所述上基板上设有辅助导电层的一侧与所述下基板上设有第二电极的一侧相向设置，所述辅助导电层与所述第二电极直接接触并且电性连接。
  2. 如权利要求1所述的OLED显示装置，其中，所述上基板中还包括设于第一基板上的第一光阻间隙物，所述辅助导电层设于所述第一光阻间隙物与第一基板之上，且覆盖所述第一光阻间隙物，其中，所述辅助导电层上覆盖所述第一光阻间隙物的区域与位于所述下基板上表面的第二电极直接接触，使得所述第二电极与辅助导电层实现电性连接。
  3. 如权利要求1所述的OLED显示装置，其中，所述下基板中还包括设于像素定义层上的第二光阻间隙物，所述第二电极设于所述第二光阻间隙物、像素定义层、及OLED发光层之上，且覆盖所述第二光阻间隙物，其中，所述第二电极上覆盖所述第二光阻间隙物的区域与位于所述上基板下表面的辅助导电层直接接触，使得所述第二电极与辅助导电层实现电性连接。
  4. 如权利要求1所述的OLED显示装置，其中，所述上基板中还包括设于第一基板上的第一光阻间隙物，所述辅助导电层设于所述第一光阻间隙物与第一基板之上，且覆盖所述第一光阻间隙物；所述下基板中还包括设于像素定义层上的第二光阻间隙物，所述第二电极设于所述第二光阻间隙物、像素定义层、及OLED发光层之上，且覆盖所述第二光阻间隙物，其中，所述上基板中的第一光阻间隙物与所述下基板中的第二光阻间隙物对应设置，所述辅助导电层上覆盖所述第一光阻间隙物的区域与所述第二电极上覆盖所述第二光阻间隙物的区域直接接触，使得所述第二电极与辅助导电层实现电性连接。
  5. 如权利要求1所述的OLED显示装置，其中，所述辅助导电层为一 整面的结构。
  6. 如权利要求1所述的OLED显示装置，其中，所述辅助导电层为连续的网状结构。
  7. 如权利要求1所述的OLED显示装置，其中，所述辅助导电层为多个不连续的部分所组成。
  8. 如权利要求1所述的OLED显示装置，其中，所述辅助导电层为透明导电层或不透明导电层。
  9. 如权利要求1所述的OLED显示装置，其中，所述辅助导电层的材料为氧化铟锡、铟镓氧化锌、氧化锡、铜、铝、铬、钛或钼。
  10. 如权利要求1所述的OLED显示装置，其中，所述下基板中，所述第一绝缘层与第二绝缘层上对应TFT层上方设有第一过孔，所述第一电极经由第一过孔与所述TFT层相连接；所述像素定义层上对应第一电极上方设有第二过孔，所述OLED发光层位于该第二过孔内。
  11. 一种OLED显示装置，包括上基板、下基板、及密封连接上基板与下基板的封框胶；
    所述上基板包括第一基板、及设于第一基板上的辅助导电层；
    所述下基板包括第二基板、设于第二基板上的TFT层、设于TFT层上的第一绝缘层、设于第一绝缘层上的第二绝缘层、设于第二绝缘层上的第一电极、设于第二绝缘层与第一电极上的像素定义层、及设于第一电极上的OLED发光层、设于像素定义层与OLED发光层上的第二电极；
    所述上基板设于所述下基板的上方，且所述上基板上设有辅助导电层的一侧与所述下基板上设有第二电极的一侧相向设置，所述辅助导电层与所述第二电极直接接触并且电性连接；
    其中，所述上基板中还包括设于第一基板上的第一光阻间隙物，所述辅助导电层设于所述第一光阻间隙物与第一基板之上，且覆盖所述第一光阻间隙物，其中，所述辅助导电层上覆盖所述第一光阻间隙物的区域与位于所述下基板上表面的第二电极直接接触，使得所述第二电极与辅助导电层实现电性连接；
    其中，所述辅助导电层为一整面的结构；
    其中，所述下基板中，所述第一绝缘层与第二绝缘层上对应TFT层上方设有第一过孔，所述第一电极经由第一过孔与所述TFT层相连接；所述像素定义层上对应第一电极上方设有第二过孔，所述OLED发光层位于该第二过孔内。
  12. 如权利要求11所述的OLED显示装置，其中，所述辅助导电层为 透明导电层或不透明导电层。
  13. 如权利要求11所述的OLED显示装置，其中，所述辅助导电层的材料为氧化铟锡、铟镓氧化锌、氧化锡、铜、铝、铬、钛或钼。
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