WO2016173210A1 - 黑色矩阵的制作方法 - Google Patents

黑色矩阵的制作方法 Download PDF

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Publication number
WO2016173210A1
WO2016173210A1 PCT/CN2015/091645 CN2015091645W WO2016173210A1 WO 2016173210 A1 WO2016173210 A1 WO 2016173210A1 CN 2015091645 W CN2015091645 W CN 2015091645W WO 2016173210 A1 WO2016173210 A1 WO 2016173210A1
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black matrix
substrate
alignment mark
fabricating
organic photoresist
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French (fr)
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熊源
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/786,165 priority Critical patent/US9766521B2/en
Publication of WO2016173210A1 publication Critical patent/WO2016173210A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133354—Arrangements for aligning or assembling substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating a black matrix.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • liquid crystal display devices which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to place liquid crystal molecules in two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates, and the liquid crystal molecules are controlled to change direction by energizing or not, and the light of the backlight module is changed. Refracted to produce a picture.
  • the liquid crystal display panel comprises a CF (Color Filter) substrate, a Thin Film Transistor (TFT) array substrate, a liquid crystal (LC) sandwiched between the color filter substrate and the thin film transistor array substrate, and a sealant.
  • the composition of the frame generally includes: an Array process (film, yellow light, etching and stripping), a middle cell (Cell process) (a TFT substrate and a CF substrate), and a back mode Assembly process (drive IC and printed circuit board is pressed).
  • the front Array process mainly forms a TFT substrate to control the movement of liquid crystal molecules; the middle Cell process mainly adds liquid crystal between the TFT substrate and the CF substrate; the rear module assembly process is mainly to drive the IC to press and print the circuit.
  • the integration of the plates drives the liquid crystal molecules to rotate and display images.
  • a black matrix (BM, Black Matrix) is usually formed on the side of the color filter substrate to divide adjacent color resists, block color gaps, prevent light leakage or color mixing, and prepare a black matrix.
  • the technology of the TFT array substrate is called BOA (BM On Array, the black matrix is attached to the array substrate), and the BOA can solve the problem that the upper and lower substrates are misaligned and the shading area is not matched. This is especially useful for curved displays.
  • COA Color Filter On Array
  • COA technology is a technology for preparing RGB color resists originally prepared on a color film substrate on a TFT array substrate. The COA technology can improve signal delay on the metal line, provide panel aperture ratio, and improve the panel. Display quality.
  • FIG. 1 is a schematic view showing a black matrix formed on a color filter substrate, as shown in FIG.
  • the array 200 is the first process of the color film substrate 100, so there is no need to refer to the alignment mark of the front process during the preparation of the black matrix.
  • the black matrix is fabricated on the side of the TFT array substrate, other pattern processes have been performed before the black matrix is prepared. Therefore, it is necessary to refer to the alignment mark of the pre-process when preparing the black matrix.
  • the black matrix has a high optical density (OD), it interferes with the recognition of the reticle alignment mark after coating, which may cause the exposure machine to fail to align. If a black matrix material with a lower optical density value is to be used, the ability to recognize the alignment mark after coating can be increased, but the shading effect of the black matrix is seriously affected.
  • OD optical density
  • FIG. 2 is a schematic view showing a black matrix film coated on a TFT array substrate
  • FIG. 3 is a schematic cross-sectional view of the circled area shown in FIG. 2.
  • the black matrix film 400 As can be seen from FIG. 2 and FIG. 3, on the TFT array substrate 300.
  • the black matrix film 400 After the black matrix film 400 is coated, the black matrix film 400 completely covers the alignment mark 500. Since the thickness of the black matrix film 400 is 1 ⁇ m, which is covered by the alignment mark 500, the pair is weakened.
  • the bit difference 500 between the bit mark 500 and the adjacent area makes it difficult to recognize the exact position of the alignment mark 500 even if the method of contour detection is used.
  • the position detection mark can be used to identify the position of the alignment mark.
  • the black matrix film is patterned to form a black matrix design pattern, which solves the problem that the alignment mark is difficult to identify during the preparation of the black matrix in the BOA architecture.
  • the present invention provides a method for fabricating a black matrix, which includes the following steps:
  • Step 1 providing a substrate, wherein the substrate is provided with a plurality of alignment marks;
  • Step 2 forming an organic photoresist layer on the substrate, the organic photoresist layer comprising a plurality of organic photoresist blocks respectively covering a plurality of alignment marks;
  • Step 3 coating a black matrix film on the substrate and the organic photoresist layer
  • Step 4 Based on the gap formed between the alignment mark on the substrate and the adjacent area, the position recognition device is used to identify the position of the alignment mark, and after the accurate alignment, the black matrix film is patterned to form a black matrix.
  • the substrate is a TFT array substrate.
  • the substrate has a rectangular structure, and the alignment marks are four, which are respectively disposed at four corners of the rectangle.
  • the alignment mark and the organic photoresist block are both cross-shaped structures, and the two are the same size.
  • the organic photoresist block is a color photoresist block.
  • the organic photoresist block has a thickness of 3 ⁇ m.
  • the black matrix film has a thickness of 1 ⁇ m.
  • step 3 the difference between the alignment mark and the adjacent area is greater than 2 ⁇ m.
  • step 3 the difference between the alignment mark and the adjacent area is 3 ⁇ m.
  • the contour recognition device in the step 3 is a lens or a CCD probe having a differential mode.
  • the invention also provides a method for manufacturing a black matrix, comprising the following steps:
  • Step 1 providing a substrate, wherein the substrate is provided with a plurality of alignment marks;
  • Step 2 forming an organic photoresist layer on the substrate, the organic photoresist layer comprising a plurality of organic photoresist blocks respectively covering a plurality of alignment marks;
  • Step 3 coating a black matrix film on the substrate and the organic photoresist layer
  • Step 4 Based on the gap formed between the alignment mark on the substrate and the adjacent area, the contour recognition device is used to identify the position of the alignment mark, and after the accurate alignment, the black matrix film is patterned to form a black matrix;
  • the substrate is a TFT array substrate
  • the substrate is a rectangular structure, and the alignment marks are four, respectively disposed at four corners of the rectangle;
  • the alignment mark and the organic photoresist block are both cross-shaped structures, and the sizes of the two are the same;
  • organic photoresist block is a color photoresist block
  • the contour recognition device in the step 3 is a lens or a CCD probe having a differential mode.
  • the present invention provides a method for fabricating a black matrix by using a COA technique to first prepare a thick organic thin resist block on a para-marker, and then covering the black matrix film on the organic photoresist block, The gap between the alignment mark and the adjacent area is increased, and the position of the alignment mark can be accurately recognized by the contour recognition device, thereby solving the problem that the alignment mark of the black matrix film after coating is difficult to be identified in the BOA process.
  • 1 is a schematic view showing a black matrix formed on a color filter substrate
  • FIG. 2 is a schematic view of a black matrix photoresist system coated on a TFT array substrate
  • Figure 3 is a schematic cross-sectional view of the circled area of Figure 2;
  • Figure 5 is a schematic cross-sectional view taken along line A-A of Figure 4.
  • step 2 is a schematic diagram of step 2 of a method for fabricating a black matrix of the present invention
  • Figure 7 is a schematic cross-sectional view taken along line A-A of Figure 6;
  • step 3 of a method for fabricating a black matrix of the present invention is a schematic diagram of step 3 of a method for fabricating a black matrix of the present invention.
  • Figure 9 is a schematic cross-sectional view taken along line A-A of Figure 8.
  • FIG. 10 is a schematic diagram of step 4 of the method for fabricating a black matrix of the present invention.
  • the present invention provides a method for fabricating a black matrix, including the following steps:
  • Step 1 as shown in Figure 4-5, providing a substrate 1, the substrate 1 is provided with a plurality of alignment marks 14;
  • the substrate 1 is a TFT array substrate.
  • the substrate 1 has a rectangular structure, and the alignment marks 14 are four, which are respectively disposed at four corners of the rectangle.
  • the alignment mark 14 is a cross-shaped structure.
  • Step 2 As shown in FIG. 6-7, an organic photoresist layer is formed on the substrate 1, and the organic photoresist layer includes a plurality of organic photoresist blocks 2 covering a plurality of alignment marks 14.
  • the organic photoresist layer includes four organic photoresist blocks 2 having the same shape as the alignment mark 14 and having a cross-shaped structure, and the organic photoresist block 2 The size is substantially the same as the size of the alignment mark 14.
  • the organic photoresist block 2 may be a color photoresist block such as a red, green, or blue light blocking block.
  • the organic photoresist block 2 has a thickness d2 of 3 ⁇ m.
  • the organic photoresist block 2 is used to increase the gap between the alignment mark 14 and the adjacent area on the substrate 1 to improve the accuracy of the contour recognition device identification.
  • COA color filter on array
  • This step 2 draws on the method of COA technology.
  • An organic photoresist block (such as a color photoresist block) is prepared on the alignment mark on the TFT array substrate, thereby improving the gap between the alignment mark 14 and the adjacent area on the substrate, and facilitating the use of contour recognition in subsequent steps.
  • the device identifies the location of the alignment mark 14 and improves the accuracy of its identification.
  • Step 3 as shown in Figure 8-9, coating a black matrix film 3 on the substrate 1 and the organic photoresist layer;
  • the black matrix film 3 has a thickness of 1 ⁇ m.
  • Step 4 as shown in FIG. 10, based on the difference d3 formed between the alignment mark 14 and the adjacent area on the substrate 1, the contour recognition device is used to recognize the position of the alignment mark 14, and after accurate alignment, the pattern is formed.
  • the black matrix film 3 forms a black matrix 4.
  • the difference d3 between the alignment mark 14 and the adjacent area on the substrate 1 is 3 ⁇ m, thereby ensuring that the deviation d3 at the alignment mark 14 is greater than 2 ⁇ m, so that the contour recognition device can recognize.
  • the difference d1 between the alignment mark and the adjacent area of the TFT array substrate is generally less than 1 ⁇ m. Since the gap is small, it is difficult to identify the exact position of the alignment mark by using the contour detection method.
  • a method for fabricating a black matrix is provided by adding an organic photoresist block 2 to the alignment mark 14, and after coating the black matrix film 3, the alignment mark 14 on the substrate 1 is phased.
  • the gap d3 formed by the adjacent region is greater than 2 ⁇ m, thereby ensuring accurate identification of the position of the alignment mark 14 by the contour detecting device; compared with the existing method of directly coating the black matrix film on the alignment mark, the method is greatly increased.
  • the difference between the alignment mark and the adjacent area improves the accuracy of the contour recognition device.
  • the contour recognition device is a lens or a CCD (Charge-coupled Device) probe having a differential mode.
  • CCD Charge-coupled Device
  • the present invention provides a method for fabricating a black matrix by using a COA technique to first prepare a thick organic thin resist block on a para-marker, and then covering the black matrix film on the organic photoresist block, thereby greatly increasing
  • the gap between the alignment mark and the adjacent area can be used to accurately identify the position of the alignment mark by using the contour recognition device, thereby solving the problem that the alignment mark of the black matrix film after coating is difficult to identify in the BOA process.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

一种黑色矩阵的制作方法，采用COA技术先在对位标记(14)上制备厚度较大的有机光阻块(2)，然后将黑色矩阵薄膜(3)覆盖在有机光阻块(2)上，大大增加了对位标记(14)处与相邻区域的断差，进而利用轮廓识别设备准确识别出对位标记(14)的位置，解决了BOA制程中黑色矩阵薄膜(3)涂布后对位标记(14)难以识别的问题。

Description

黑色矩阵的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种黑色矩阵的制作方法。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。
通常液晶显示面板由彩膜(CF，Color Filter)基板、薄膜晶体管(TFT，Thin Film Transistor)阵列基板、夹于彩膜基板与薄膜晶体管阵列基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成TFT基板，以便于控制液晶分子的运动；中段Cell制程主要是在TFT基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。
传统的液晶显示面板中，通常会在彩膜基板一侧制作一层黑色矩阵(BM，Black Matrix)，用于分割相邻色阻，遮挡色彩的空隙，防止漏光或者混色；而将黑色矩阵制备在TFT阵列基板的技术叫做BOA(BM On Array，黑色矩阵贴附于阵列基板)，BOA可以解决上下基板错位导致遮光区域不匹配的问题，这种对曲面显示器尤其有用。COA(Color filter On Array)技术是一种将原本制备于彩膜基板上的RGB色阻制备在TFT阵列基板上的技术，COA技术可以改善金属线上的信号延迟，提供面板开口率，改善面板显示品质。
图1为在彩膜基板上制作黑色矩阵后的示意图，如图1所示，黑色矩 阵200为彩膜基板100的第一道制程，因此在黑色矩阵的制备过程中无需参考前制程的对位标记(mark)。而在BOA架构的液晶显示面板中，由于黑色矩阵制作于TFT阵列基板一侧，在制备黑色矩阵之前，已经进行了其它图案的制程，因此在制备黑色矩阵时需要参考前制程的对位标记，但由于黑色矩阵具有较高的光密度值(OD,optical density)，因此在涂布后对光罩对位标记的识别造成干扰，可能导致曝光机无法对位。如果要使用较低光密度值的黑色矩阵材料，可以增加涂布后对位标记的识别能力，但是黑色矩阵的遮光效果会受到严重影响。
图2为在TFT阵列基板上涂布黑色矩阵薄膜后的示意图，图3为图2所示的圆圈区域的横截面示意图，从图2、及图3中可以看出，在TFT阵列基板300上涂布黑色矩阵薄膜400后，所述黑色矩阵薄膜400将对位标记500完全覆盖掉，由于所述黑色矩阵薄膜400厚度的典型值为1μm，其对对位标记500形成覆盖后，减弱了对位标记500处与相邻区域的断差d1，因此即使使用轮廓探测的方法也很难识别出对位标记500的准确位置。
发明内容
本发明的目的在于提供一种黑色矩阵的制作方法，通过增加对位标记处与相邻区域的断差，在涂布黑色矩阵薄膜后，可以利用轮廓探测的方法来识别对位标记所在的位置，进行精确对位后，对黑色矩阵薄膜进行图形化，形成黑色矩阵的设计图形，解决了BOA架构中黑色矩阵的制备过程中对位标记难以识别的问题。
为实现上述目的，本发明提供一种黑色矩阵的制作方法，其特征在于，包括如下步骤：
步骤1、提供基板，所述基板上设置有数个对位标记；
步骤2、在所述基板上制作一有机光阻层，所述有机光阻层包括分别覆盖数个对位标记的数个有机光阻块；
步骤3、在所述基板及有机光阻层上涂覆一黑色矩阵薄膜；
步骤4、基于基板上对位标记处与相邻区域形成的断差，采用轮廓识别设备识别出对位标记的位置，进行精确对位后，图案化所述黑色矩阵薄膜，形成黑色矩阵。
所述步骤1中，所述基板为TFT阵列基板。
所述基板为矩形结构，所述对位标记为四个，分别设置于矩形的四个角处。
所述对位标记与有机光阻块均为十字形结构，且二者的尺寸相同。
述有机光阻块为彩色光阻块。
所述有机光阻块的厚度为3μm。
所述黑色矩阵薄膜的厚度为1μm。
所述步骤3中对位标记处与相邻区域的断差大于2μm。
所述步骤3中对位标记处与相邻区域的断差为3μm。
所述步骤3中的轮廓识别设备为具有差分模式的镜头或CCD探头。
本发明还提供一种黑色矩阵的制作方法，包括如下步骤：
步骤1、提供基板，所述基板上设置有数个对位标记；
步骤2、在所述基板上制作一有机光阻层，所述有机光阻层包括分别覆盖数个对位标记的数个有机光阻块；
步骤3、在所述基板及有机光阻层上涂覆一黑色矩阵薄膜；
步骤4、基于基板上对位标记处与相邻区域形成的断差，采用轮廓识别设备识别出对位标记的位置，进行精确对位后，图案化所述黑色矩阵薄膜，形成黑色矩阵；
其中，所述步骤1中，所述基板为TFT阵列基板；
其中，所述基板为矩形结构，所述对位标记为四个，分别设置于矩形的四个角处；
其中，所述对位标记与有机光阻块均为十字形结构，且二者的尺寸相同；
其中，所述有机光阻块为彩色光阻块；
其中，所述步骤3中的轮廓识别设备为具有差分模式的镜头或CCD探头。
本发明的有益效果：本发明提供一种黑色矩阵的制作方法，采用COA技术先在对位标记上制备厚度较大的有机光阻块，然后将黑色矩阵薄膜覆盖在有机光阻块上，大大增加了对位标记处与相邻区域的的断差，进而可以利用轮廓识别设备准确识别出对位标记的位置，从而解决了BOA制程中黑色矩阵薄膜涂布后对位标记难以识别的问题。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为在彩膜基板上制作黑色矩阵后的示意图；
图2为在TFT阵列基板上涂布黑色矩阵光阻体系后的示意图；
图3为图2中的圆圈区域的横截面示意图；
图4为本发明的黑色矩阵的制作方法步骤1的示意图；
图5为图4中A-A处的剖面示意图；
图6为本发明的黑色矩阵的制作方法步骤2的示意图；
图7为图6中A-A处的剖面示意图；
图8为本发明的黑色矩阵的制作方法步骤3的示意图；
图9为图8中A-A处的剖面示意图；
图10为本发明的黑色矩阵的制作方法步骤4的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图4-10，本发明提供一种黑色矩阵的制作方法，包括如下步骤：
步骤1、如图4-5所示，提供基板1，所述基板1上设置有数个对位标记14；
具体的，所述基板1为TFT阵列基板。
优选的，所述基板1为矩形结构，所述对位标记14为四个，分别设置于矩形的四个角处。
优选的，所述对位标记14为十字形结构。
步骤2、如图6-7所示，在所述基板1上制作一有机光阻层，所述有机光阻层包括分别覆盖数个对位标记14的数个有机光阻块2。
具体的，所述有机光阻层包括4个有机光阻块2，所述有机光阻块2的形状与所述对位标记14相同，均为十字形结构，且所述有机光阻块2的尺寸与所述对位标记14的尺寸基本相同。
具体的，所述有机光阻块2可以为彩色光阻块，如红色、绿色、或蓝色光阻块。
优选的，所述有机光阻块2的厚度d2为3μm。该有机光阻块2用于增加基板1上对位标记14处与相邻区域的断差，以提高轮廓识别设备识别的准确性。
COA(color filter on array)技术是一种将彩色滤光片(通常由彩色光阻制成)制备于TFT阵列基板的技术，该步骤2借鉴了COA技术的方法， 将有机光阻块(如彩色光阻块)制备于TFT阵列基板上的对位标记上，从而提高了基板上对位标记14处与相邻区域的断差，有利于后续步骤中使用轮廓识别设备对对位标记14所在的位置进行识别，并提高其识别的准确性。
步骤3、如图8-9所示，在所述基板1及有机光阻层上涂覆一黑色矩阵薄膜3；
优选的，所述黑色矩阵薄膜3的厚度为1μm。
步骤4、如图10所示，基于基板1上对位标记14处与相邻区域形成的断差d3，采用轮廓识别设备识别出对位标记14的所在位置，进行精确对位后，图案化所述黑色矩阵薄膜3，形成黑色矩阵4。
具体的，所述基板1上对位标记14处与相邻区域的断差d3为3μm，从而保证所述对位标记14处的断差d3大于2μm，以便于轮廓识别设备进行识别。
现有技术中TFT阵列基板在对位标记处与相邻区域的断差d1一般小于1μm，由于该断差较小，因此使用轮廓探测的方法很难识别出对位标记的准确位置，而本申请提供的一种黑色矩阵的制作方法，通过在在对位标记14上增加了一有机光阻块2，在涂覆黑色矩阵薄膜3后，使得所述基板1上对位标记14处与相邻区域形成的断差d3大于2μm，从而保证了轮廓探测设备对对位标记14所在位置的准确识别；相比于现有的直接在对位标记上涂覆黑色矩阵薄膜的方法，大大增加了对位标记处与相邻区域的的断差，提高了轮廓识别设备的准确性。
具体的，所述轮廓识别设备为具有差分模式的镜头或CCD(Charge-coupled Device，电荷耦合元件)探头。
综上所述，本发明提供一种黑色矩阵的制作方法，采用COA技术先在对位标记上制备厚度较大的有机光阻块，然后将黑色矩阵薄膜覆盖在有机光阻块上，大大增加了对位标记处与相邻区域的的断差，进而可以利用轮廓识别设备准确识别出对位标记的位置，从而解决了BOA制程中黑色矩阵薄膜涂布后对位标记难以识别的问题。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (15)

  1. 一种黑色矩阵的制作方法，包括如下步骤：
    步骤1、提供基板，所述基板上设置有数个对位标记；
    步骤2、在所述基板上制作一有机光阻层，所述有机光阻层包括分别覆盖数个对位标记的数个有机光阻块；
    步骤3、在所述基板及有机光阻层上涂覆一黑色矩阵薄膜；
    步骤4、基于基板上对位标记处与相邻区域形成的断差，采用轮廓识别设备识别出对位标记的位置，进行精确对位后，图案化所述黑色矩阵薄膜，形成黑色矩阵。
  2. 如权利要求1所述的黑色矩阵的制作方法，其中，所述步骤1中，所述基板为TFT阵列基板。
  3. 如权利要求1所述的黑色矩阵的制作方法，其中，所述基板为矩形结构，所述对位标记为四个，分别设置于矩形的四个角处。
  4. 如权利要求1所述的黑色矩阵的制作方法，其中，所述对位标记与有机光阻块均为十字形结构，且二者的尺寸相同。
  5. 如权利要求1所述的黑色矩阵的制作方法，其中，所述有机光阻块为彩色光阻块。
  6. 如权利要求1所述的黑色矩阵的制作方法，其中，所述有机光阻块的厚度为3μm。
  7. 如权利要求6所述的黑色矩阵的制作方法，其中，所述黑色矩阵薄膜的厚度为1μm。
  8. 如权利要求7所述的黑色矩阵的制作方法，其中，所述步骤3中对位标记处与相邻区域的断差大于2μm。
  9. 如权利要求8所述的黑色矩阵的制作方法，其中，所述步骤3中对位标记处与相邻区域的断差为3μm。
  10. 如权利要求1所述的黑色矩阵的制作方法，其中，所述步骤3中的轮廓识别设备为具有差分模式的镜头或CCD探头。
  11. 一种黑色矩阵的制作方法，包括如下步骤：
    步骤1、提供基板，所述基板上设置有数个对位标记；
    步骤2、在所述基板上制作一有机光阻层，所述有机光阻层包括分别覆盖数个对位标记的数个有机光阻块；
    步骤3、在所述基板及有机光阻层上涂覆一黑色矩阵薄膜；
    步骤4、基于基板上对位标记处与相邻区域形成的断差，采用轮廓识别设备识别出对位标记的位置，进行精确对位后，图案化所述黑色矩阵薄膜，形成黑色矩阵；
    其中，所述步骤1中，所述基板为TFT阵列基板；
    其中，所述基板为矩形结构，所述对位标记为四个，分别设置于矩形的四个角处；
    其中，所述对位标记与有机光阻块均为十字形结构，且二者的尺寸相同；
    其中，所述有机光阻块为彩色光阻块；
    其中，所述步骤3中的轮廓识别设备为具有差分模式的镜头或CCD探头。
  12. 如权利要求11所述的黑色矩阵的制作方法，其中，所述有机光阻块的厚度为3μm。
  13. 如权利要求12所述的黑色矩阵的制作方法，其中，所述黑色矩阵薄膜的厚度为1μm。
  14. 如权利要求13所述的黑色矩阵的制作方法，其中，所述步骤3中对位标记处与相邻区域的断差大于2μm。
  15. 如权利要求14所述的黑色矩阵的制作方法，其中，所述步骤3中对位标记处与相邻区域的断差为3μm。
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