WO2016169080A1 - 经亮点修复后的液晶面板及其亮点修复方法 - Google Patents

经亮点修复后的液晶面板及其亮点修复方法 Download PDF

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WO2016169080A1
WO2016169080A1 PCT/CN2015/079514 CN2015079514W WO2016169080A1 WO 2016169080 A1 WO2016169080 A1 WO 2016169080A1 CN 2015079514 W CN2015079514 W CN 2015079514W WO 2016169080 A1 WO2016169080 A1 WO 2016169080A1
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sub
pixel unit
pixel electrode
film transistor
thin film
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PCT/CN2015/079514
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English (en)
French (fr)
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衣志光
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深圳市华星光电技术有限公司
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Priority to US14/780,049 priority Critical patent/US9703160B2/en
Priority to KR1020177023536A priority patent/KR101937418B1/ko
Priority to RU2017134893A priority patent/RU2663270C1/ru
Priority to JP2017554352A priority patent/JP6518786B2/ja
Priority to GB1712000.7A priority patent/GB2550726B/en
Publication of WO2016169080A1 publication Critical patent/WO2016169080A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements
    • G02F2201/506—Repairing, e.g. with redundant arrangement against defective part
    • G02F2201/508—Pseudo repairing, e.g. a defective part is brought into a condition in which it does not disturb the functioning of the device

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular, to a method for repairing a bright spot of a liquid crystal panel and a liquid crystal panel after being repaired by a bright spot.
  • LCD Liquid Crystal Display
  • TFT Thin Film Transistor
  • the liquid crystal panel is usually composed of a thin film transistor array substrate, a color filter substrate, and a liquid crystal layer.
  • the plurality of pixel units (Pixels) are arranged in an array on the thin film transistor array substrate, and each of the pixel units includes at least one thin film transistor and a pixel electrode corresponding to the thin film transistor.
  • the thin film transistor is used as a switching element for starting the pixel unit, and is connected to a scan line (Scan Line) and a data line (Data Line). Under the driving of the scan signal, the voltage of the data signal is loaded on the corresponding pixel electrode, thereby realizing the image. Display of information.
  • a partial region of the pixel electrode is overlaid on the common line of the scan line or the substrate, and the overlapped portion serves as a storage capacitor Cst for stabilizing the voltage of the data signal loaded on the pixel electrode, thereby maintaining the picture. Display quality.
  • FIG. 1 is a schematic structural diagram of a conventional charge sharing type pixel structure.
  • the pixel structure includes a main pixel unit and a sub-pixel unit, and further includes a charge sharing unit.
  • the main pixel unit includes a main pixel electrode P1 and a first thin film transistor T1.
  • the gate of the first thin film transistor T1 is electrically connected to the first scan line S1, and the source is electrically connected to the data line D.
  • the sub-pixel unit includes sub-pixels
  • the electrode P2 and the second thin film transistor T2 are electrically connected to the first scan line S1, the source is electrically connected to the data line D, and the drain is electrically connected to the sub-pixel through an antenna L.
  • the electrode P2, the antenna L straddles the main pixel electrode P1;
  • the charge sharing unit includes a third thin film transistor T3, the gate of the third thin film transistor T3 is electrically connected to the second scan line S2, and the drain is electrically connected
  • a first charge capacitance Ccs1 is formed between the source and the main pixel electrode P1
  • a second charge capacitance Ccs2 is formed between the source and the corresponding common electrode line COM.
  • the equivalent circuit diagram of the charge sharing type pixel structure is shown in FIG. 2.
  • Cgs1 is the parasitic capacitance of the main pixel unit
  • Cst1 is the storage capacitor of the main pixel unit
  • Clc1 is the liquid crystal capacitance of the main pixel unit
  • Cgs2 is the parasitic capacitance of the sub-pixel unit
  • Cst2 is the storage capacitance of the sub-pixel unit
  • Clc2 is the second The liquid crystal capacitance of the pixel unit.
  • the basic principle of the charge sharing technique is: first, when the scan signal is transmitted from the first scan line S1, the drain and the source of the first thin film transistor T1 and the second thin film transistor T2 are turned on, so that the main pixel electrode P1 and the sub-pixel electrode The voltage of P2 reaches the same potential under the action of the data signal transmitted from the data line D; then, when the scan signal is transmitted from the second scan line S2, the drain and source of the first thin film transistor T1 and the second thin film transistor T2 At the same time, the drain and the source of the third thin film transistor T3 are turned on, so that the charge on the sub-pixel electrode P2 is transferred to the common electrode wiring COM through the second charge capacitor Ccs2, and the voltage of the sub-pixel electrode P2 and the main pixel electrode are made.
  • the voltage of P1 generates a voltage difference, which in turn causes the liquid crystal of the sub-pixel unit and the liquid crystal of the main pixel unit to be deflected at different deflection angles, thereby achieving the technical effect of multi-domain display to compensate for the large-view role deviation.
  • the existing method of repairing the bright spot of the sub-pixel unit into a dark spot is as follows: Referring to the schematic diagram of FIG. 3 , firstly, the second The connection of the drain of the thin film transistor T2 to the antenna L is cut off, and the drain and source wirings of the third thin film transistor T3 are cut off (shown by x in FIG. 3), and then the sub-pixel electrode P2 and the common electrode are matched. Line COM solder short circuit (shown as L0 in Figure 3) to repair defective sub-pixel units It becomes a dark state and improves the yield of the LCD panel.
  • the antenna L in the repaired sub-pixel unit has a potential equivalent to the common electrode wiring COM, and since the antenna L straddles the main pixel electrode P1, this causes the storage capacitance Cst1 of the main pixel unit to increase. Big.
  • a thin-film transistor is repeatedly turned on and off to generate a feed through voltage ⁇ V.
  • the feedthrough voltage Where Vgh is the turn-on voltage of the first thin film transistor T1
  • Vgl is the turn-off voltage of the first thin film transistor T1.
  • 4 is a waveform diagram of a voltage signal received by a pixel unit, in which Vd represents a waveform of a data signal driving voltage, Vg represents a waveform of a driving voltage of the scanning signal, and Vp represents a waveform of an actual voltage signal received by the pixel electrode, and Vcom is Common voltage signal. As shown in FIG.
  • the voltage Vp after the pixel electrode is completed is smaller than the driving voltage Vd, and the difference is just right. It is ⁇ V, and the difference between Vp and Vcom in the positive half cycle and the absolute value of the difference between Vp and Vcom in the negative half cycle are equal.
  • the present invention provides a bright spot repair method for a liquid crystal panel and a liquid crystal panel after a bright spot repair, which does not change the main pixel unit after performing bright spot repair on the sub-pixel unit of the charge sharing type pixel structure.
  • the storage capacitor avoids affecting the feed through voltage of the main pixel unit, ensuring the display quality of the liquid crystal panel.
  • a liquid crystal panel after a bright spot repair includes an array substrate, and the array substrate includes at least a pixel structure after being repaired by a bright spot, the pixel structure comprising:
  • the main pixel unit includes at least a main pixel electrode
  • the sub-pixel unit includes at least a sub-pixel electrode and a second thin film transistor, and a drain of the second thin film transistor is connected to the sub-pixel electrode through an antenna, the antenna spanning the main pixel electrode;
  • a charge sharing unit configured to change a voltage of the sub-pixel unit under a driving of the second scan line scan signal to cause a difference from a voltage of the main pixel unit
  • the sub-pixel unit is a pixel unit that is repaired to a dark spot due to a bright spot defect.
  • the drain of the second thin film transistor and the The antenna is in a disconnected state, the antenna is disconnected from the sub-pixel electrode, the antenna is electrically connected to the main pixel electrode, and the sub-pixel electrode is electrically connected to the common electrode wiring
  • the charge sharing unit is in a disconnected state with the main pixel unit and the sub-pixel unit.
  • the disconnected state is to insulate the two components from each other by cutting.
  • the antenna is electrically connected to the main pixel electrode through a first repairing line, and the sub-pixel electrode is electrically connected to the common electrode wiring through a second repairing line.
  • the main pixel unit further includes a first thin film transistor, a gate of the first thin film transistor is electrically connected to the first scan line, a source is electrically connected to the data line, and a drain is electrically connected to the The main pixel electrode.
  • the gate of the second thin film transistor is electrically connected to the first scan line, and the source is electrically connected to the data line.
  • the charge sharing unit includes a third thin film transistor. After the sub-pixel unit is repaired to a dark spot, the drain of the third thin film transistor is disconnected from the sub-pixel electrode, and the The source of the three thin film transistor is disconnected from the main pixel electrode and the common electrode wiring.
  • the method for repairing a bright spot of a liquid crystal panel as described above comprising the steps of: insulating a connection between a drain of the second thin film transistor and the antenna by laser cutting, and the antenna and the sub-pixel Disconnecting the connection of the electrode, insulating the connection between the charge sharing unit and the main pixel unit and the sub-pixel unit; electrically connecting the antenna to the main pixel by laser welding And an electrode electrically connecting the sub-pixel electrode to the common electrode wiring.
  • the antenna is electrically connected to the main pixel electrode by laser welding the repair line, and the sub-pixel electrode is electrically connected to the common electrode line.
  • the bright spot repairing method of the liquid crystal panel disconnects both ends of the antenna across the main pixel electrode when performing the bright spot repair on the sub-pixel unit of the charge sharing type pixel structure. Insulation and electrically connecting the antenna to the main pixel electrode.
  • a storage capacitor is not formed between the antenna and the main pixel electrode, the storage capacitance of the main pixel unit is not increased, and the feed through voltage of the main pixel unit is prevented from being affected, thereby ensuring The display quality of the LCD panel.
  • FIG. 1 is a schematic structural view of a charge sharing type pixel structure.
  • FIG. 2 is an equivalent circuit diagram of the charge sharing type pixel structure of FIG. 1.
  • FIG. 3 is a diagram of performing spot repair on a sub-pixel unit in the prior art.
  • FIG. 4 is a waveform diagram of a voltage signal received by a pixel unit.
  • FIG. 5 is a diagram of performing bright spot repair on a sub-pixel unit in an embodiment of the present invention.
  • FIG. 6 is an equivalent circuit diagram of performing a bright spot repair on a sub-pixel unit according to an embodiment of the present invention.
  • the liquid crystal panel includes a thin film transistor array substrate, and the array substrate is provided with a plurality of charge sharing type pixel structures.
  • the pixel structure includes a data line D, a first scan line S1, a second scan line S2, a common electrode line COM, a main pixel unit, a sub-pixel unit, and a charge sharing unit.
  • the main pixel unit and the sub-pixel unit are configured to respectively receive the data signals on the data line D under the driving of the scan signals of the first scanning line S1 to have the same voltage.
  • the main pixel unit includes a main pixel electrode P1 and a first thin film transistor T1.
  • the gate of the first thin film transistor T1 is electrically connected to the first scan line S1, and the source is electrically connected to the data line D. It is connected to the main pixel electrode P1.
  • the sub-pixel unit includes a sub-pixel electrode P2 and a second thin film transistor T2.
  • the gate of the second thin film transistor T2 is electrically connected to the first scan line S1, the source is electrically connected to the data line D, and the drain is passed through an antenna L. Electrically connected to the sub-pixel electrode P2, the antenna L spans the main pixel electrode P1.
  • the charge sharing unit is configured to change the voltage of the sub-pixel unit under the driving of the scan signal of the second scanning line S2 to make a difference from the voltage of the main pixel unit.
  • the charge sharing unit includes a third thin film transistor T3 having a gate electrically connected to the second scan line S2, a drain electrically connected to the sub-pixel electrode P2, and a source and a main pixel electrode P1.
  • the first charge capacitor Ccs1 is coupled to each other, and the source is further coupled with the corresponding common electrode wiring COM to form a second charge capacitor Ccs2.
  • Cgs1 is the parasitic capacitance of the main pixel unit
  • Cst1 is the storage capacitor of the main pixel unit
  • Clc1 is the liquid crystal capacitance of the main pixel unit
  • Cgs2 is the parasitic capacitance of the sub-pixel unit
  • Cst2 is the second time.
  • the storage capacitance of the pixel unit, Clc2 is the liquid crystal capacitance of the sub-pixel unit.
  • the embodiment of the present invention provides the following bright spot repairing method.
  • the method specifically includes the steps of:
  • connection between the drain and the source of the third thin film transistor T3 is broken by laser cutting (indicated by x in the drawing), so that the drain of the third thin film transistor T3 and the sub-pixel The electrode P2 is in a disconnected state, and the source of the third thin film transistor T3 is disconnected from the main pixel electrode P1 and the common electrode wiring COM.
  • the antenna L is electrically connected to the main pixel electrode P1 through the first repairing line L1 by means of laser welding.
  • the sub-pixel electrode P2 is electrically connected to the common electrode wiring COM through the second repairing line L2 by means of laser welding.
  • the liquid crystal panel after the bright spot repair is finally obtained.
  • at least one of the pixel structures is a pixel structure repaired by the above-described bright spot repair method.
  • the repaired pixel unit will form a dark spot, but the number of dark spots is also a certain specification, too many dark spots will also reduce the level of the LCD panel or even scrap.
  • the bright spot repairing method of the liquid crystal panel provided by the embodiment of the present invention, when performing bright spot repair on the sub-pixel unit of the charge sharing type pixel structure, the antenna spanning the main pixel electrode Both ends are insulated and the antenna is electrically connected to the main pixel electrode.
  • a storage capacitor is not formed between the antenna and the main pixel electrode, the storage capacitance of the main pixel unit is not increased, and the feed through voltage of the main pixel unit is prevented from being affected, thereby ensuring The display quality of the LCD panel.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
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Abstract

一种经亮点修复后的液晶面板以及亮点修复方法，该液晶面板包括阵列基板，阵列基板至少包括一经亮点修复后的像素结构，该像素结构包括：主像素单元和次像素单元，被配置为在第一扫描线(S1)的驱动下分别接收数据信号而具有相同的电压；电荷分享单元，被配置为在第二扫描线（S2）的驱动下改变次像素单元的电压，使其与主像素单元的电压产生差异；其中，次像素单元为具有亮点缺陷的像素单元，修复为暗点后的次像素单元中，薄膜晶体管（T2）的漏极与天线（L）处于断开连接状态，天线（L）与次像素电极（P2）处于断开连接状态，天线（L）电性连接至主像素电极（P1），次像素电极（P2）电性连接至共用电极配线；并且电荷分享单元与主像素单元和次像素单元均处于断开连接状态。

Description

经亮点修复后的液晶面板及其亮点修复方法 技术领域
本发明涉及液晶显示器技术领域,尤其涉及一种液晶面板的亮点修复方法以及经亮点修复后的液晶面板。
背景技术
液晶显示器(Liquid Crystal Display，LCD)，为平面超薄的显示设备，它由一定数量的彩色或黑白像素组成，放置于光源或者反射面前方。液晶显示器功耗很低，并且具有高画质、体积小、重量轻的特点，因此倍受大家青睐，成为显示器的主流。目前液晶显示器是以薄膜晶体管(Thin Film Transistor，TFT)液晶显示器为主，液晶面板是液晶显示器的主要组件。
液晶面板通常由薄膜晶体管阵列基板、彩色滤光基板和液晶层组成。其中，薄膜晶体管阵列基板上以阵列的形式排布有多个像素单元(Pixel)，每一个像素单元至少包括一个薄膜晶体管，以及与薄膜晶体管对应配置的像素电极(Pixel Electrode)。薄膜晶体管作为启动像素单元工作的开关元件，与扫描线(Scan Line)和数据线(Data Line)连接，在扫描信号的驱动下，将数据信号的电压加载在对应的像素电极上，从而实现图像信息的显示。此外，像素电极的部分区域会覆盖在扫描线或基板的共用电极配线(Common Line)上，重叠的部分即作为存储电容Cst，用于稳定加载在像素电极的数据信号的电压，从而保持画面显示品质。
目前，为了提高大视角的显示品质，即使斜视角与正视角的颜色一致性好，液晶面板的像素结构通常会采用一种称作电荷分享型的像素结构(charge-share pixel)。如图1为现有的一种电荷分享型像素结构的结构示意图。如图1所示，由于采用电荷分享技术，该像素结构包括主像素单元和次像素单元，还包括一电荷分享单元。其中：主像素单元包括主像素电极P1和第一薄膜晶体管T1，该第一薄膜晶体管T1的栅极电性连接到第一扫描线S1，源极电性连接到数据线D，漏极电性连接到所述主像素电极P1；次像素单元包括次像素 电极P2和第二薄膜晶体管T2，该第二薄膜晶体管T2的栅极电性连接到第一扫描线S1，源极电性连接到数据线D，漏极通过一天线L电性连接到次像素电极P2，所述天线L横跨所述主像素电极P1；电荷分享单元包括第三薄膜晶体管T3，该第三薄膜晶体管T3的栅极电性连接到第二扫描线S2，漏极电性连接到次像素电极P2，源极与主像素电极P1之间形成第一电荷电容Ccs1，同时源极还与对应的共用电极配线COM之间形成第二电荷电容Ccs2。该电荷分享型像素结构的等效电路图如图2所示。其中，Cgs1为主像素单元的寄生电容，Cst1为主像素单元的储存电容，Clc1为主像素单元的液晶电容；Cgs2为次像素单元的寄生电容，Cst2为次像素单元的储存电容，Clc2为次像素单元的液晶电容。
电荷分享技术的基本原理是：首先当第一扫描线S1传来扫描信号时，第一薄膜晶体管T1和第二薄膜晶体管T2的漏极和源极导通，使主像素电极P1和次像素电极P2的电压在数据线D传来的数据信号的作用下达到相同的电位；然后当第二扫描线S2传来扫描信号时，第一薄膜晶体管T1和第二薄膜晶体管T2的漏极和源极截止，同时第三薄膜晶体管T3的漏极和源极导通，致使次像素电极P2上的电荷通过第二电荷电容Ccs2向共用电极配线COM转移，使次像素电极P2的电压与主像素电极P1的电压产生电压差，进而使次像素单元的液晶与主像素单元的液晶以不同的偏转角度进行偏转，达到多畴显示补偿大视角色偏的技术效果。
在液晶面板的制作过程中，包含有制程工艺以及转运，这个过程中会产生许多颗粒物(particle)，这些颗粒物一部分会被清洗机台所清洗掉，而部分颗粒物会残留于液晶面板上(Array side or CF side，阵列基板或彩膜基板)，这些残留于液晶面板上的颗粒物，会造成液晶面板点亮时产生亮点、亮(暗)线、碎亮点以及弱亮(暗)线等，这些影响都不允许出现在液晶面板上的。因此我们会以YAG laser(钇铝石榴石激光器)对液晶面板进行修补，将颗粒物移除，或者将亮点修补成暗点。为保证液晶面板的品质以及人眼的感官，亮点是绝不可有的，因此需要将亮点修补成暗点。
对于如图1所示的电荷分享型的像素结构，当亮点出现在次像素单元时，现有的将次像素单元的亮点修补成暗点的方法为：参阅图3的示意图，首先将第二薄膜晶体管T2的漏极与天线L的连接处切断，并且将第三薄膜晶体管T3的漏极和源极的接线切断(图3中的x所示)，然后将次像素电极P2和共用电极配线COM焊接短路(如图3中的L0所示)，从而将有缺陷的次像素单元修复 成常暗状态，提升液晶面板的良率。在该方法中，修复后的次像素单元中的天线L具有与共用电极配线COM相当的电位，并且由于天线L横跨所述主像素电极P1，这会使得主像素单元的储存电容Cst1增大。
在一个像素单元中，薄膜晶体管不断的重复开启和关闭后会产生一个馈通(feed through)电压ΔV。具体到如上像素结构中的主像素单元来说，馈通电压
Figure PCTCN2015079514-appb-000001
其中Vgh为第一薄膜晶体管T1的开启电压，Vgl为第一薄膜晶体管T1的关闭电压。图4为一个像素单元接收到的电压信号的波形图，图中Vd表示数据信号驱动电压的波形，Vg表示扫描信号驱动电压的波形，Vp表示像素电极接收到的实际电压信号的波形,Vcom为公共电压信号。如图4所示的，由于馈通电压ΔV的存在，不管是在数据信号驱动电压Vd的正半周期还是负半周期，像素电极充电完成后的电压Vp均小于驱动电压Vd，其差值正好为ΔV，并且，正半周期中的Vp与Vcom的差值和负半周期中的Vp与Vcom的差值的绝对值相等。因此，对于主像素单元来说，当储存电容Cst1增大时，从前述ΔV的计算公式可知ΔV变小，在公共电压Vcom不变的情况下，在数据信号驱动电压Vd的正半周期，Vp与Vcom的差值增加(显示画面偏暗，但频率较快，偏暗态不易感知)；而在数据信号驱动电压Vd的负半周期，Vp与Vcom的差值减小(显示画面偏亮)。最终整体显示上感觉会是一个微亮点。因此，在修复次像素单元后，应当尽量避免其对主像素单元的储存电容Cst1的影响。
发明内容
鉴于现有技术存在的不足，本发明提供了一种液晶面板的亮点修复方法以及经亮点修复后的液晶面板，在对电荷分享型像素结构的次像素单元进行亮点修复后，不改变主像素单元的储存电容，避免影响到主像素单元的馈通(feed through)电压，保证了液晶面板的显示质量。
为了实现上述目的，本发明采用了如下的技术方案：
一种经亮点修复后的液晶面板，该液晶面板包括阵列基板，所述阵列基板至少包括一经亮点修复后的像素结构，该像素结构包括：
一数据线；
第一扫描线和第二扫描线；
一共用电极配线；
主像素单元和次像素单元，被配置为在所述第一条扫描线扫描信号的驱动下分别接收数据线上的数据信号而具有相同的电压；所述主像素单元至少包括主像素电极，所述次像素单元至少包括次像素电极和第二薄膜晶体管，所述第二薄膜晶体管的漏极通过一天线连接到所述次像素电极，所述天线横跨所述主像素电极；
电荷分享单元，被配置为在所述第二条扫描线扫描信号的驱动下改变所述次像素单元的电压，使其与所述主像素单元的电压产生差异；
其中，所述次像素单元为因具有亮点缺陷而被修复为暗点后的像素单元，在被修复为暗点后的所述次像素单元中，所述第二薄膜晶体管的漏极与所述天线处于断开连接状态，所述天线与所述次像素电极处于断开连接状态，所述天线电性连接至所述主像素电极，所述次像素电极电性连接至所述共用电极配线；并且所述电荷分享单元与所述主像素单元和所述次像素单元均处于断开连接状态。
其中，所述断开连接状态是通过切割的方式使两个部件相互绝缘。
其中，所述天线通过第一修补线电性连接至所述主像素电极，所述次像素电极通过第二修补线电性连接至所述共用电极配线。
其中，所述主像素单元还包括第一薄膜晶体管，该第一薄膜晶体管的栅极电性连接到所述第一扫描线，源极电性连接到所述数据线，漏极电性连接到所述主像素电极。
其中，所述第二薄膜晶体管的栅极电性连接到所述第一扫描线，源极电性连接到所述数据线。
其中，所述电荷分享单元包括第三薄膜晶体管，将所述次像素单元修复为暗点后，所述第三薄膜晶体管的漏极与所述次像素电极处于断开连接状态，且所述第三薄膜晶体管的源极与所述主像素电极和所述共用电极配线之间均处于断开连接状态。
如上所述的液晶面板的亮点修复方法，包括步骤：通过激光切割的方式，将所述第二薄膜晶体管的漏极与所述天线的连接处断开绝缘，将所述天线与所述次像素电极的连接处断开绝缘，将所述电荷分享单元与所述主像素单元和次像素单元的连接处均断开绝缘；通过激光焊接的方式，将所述天线电性连接至所述主像素电极，将所述次像素电极电性连接至所述共用电极配线。
其中，通过激光焊接修补线的方式，将所述天线电性连接至所述主像素电极，将所述次像素电极电性连接至所述共用电极配线。
相比于现有技术，本发明实施例提供的液晶面板的亮点修复方法，在对电荷分享型像素结构的次像素单元进行亮点修复时，将横跨于主像素电极的天线两端均断开绝缘，并且将天线电性连接至主像素电极。经过该方法修复后的液晶面板中，天线与主像素电极之间不会形成储存电容，不增大主像素单元的储存电容，避免影响到主像素单元的馈通(feed through)电压，保证了液晶面板的显示质量。
附图说明
图1为一种电荷分享型像素结构的结构示意图。
图2为如图1的电荷分享型像素结构的等效电路图。
图3为现有技术中对次像素单元进行亮点修复的图示。
图4为一个像素单元接收到的电压信号的波形图。
图5为本发明实施例中对次像素单元进行亮点修复的图示。
图6为本发明实施例中对次像素单元进行亮点修复后的等效电路图。
具体实施方式
为了进一步说明本发明的目的、技术方案和技术效果，下面参照现有技术中大尺寸液晶面板薄膜晶体管阵列基板上，采用的2G1D像素结构(像素结构中，像素单元与两条扫描线和一条数据线电性连接)的结构示意图和等效电路图，详细地介绍本发明提供的修复方法的工作原理及实施方式，以及与现有技术相比更好的技术效果。需要说明的是，虽然本发明是针对2G1D像素结构进行说明，但是不应局限于此。不同厂商设计的像素单元其结构不尽相同，会有多种变形，例如还存在一种1G2D像素结构(像素结构中，像素单元与一条扫描线和两条数据线电性连接)，因此任何本发明所属技术领域内的技术人员，在不脱离本发明所揭露的精神的前提下，在技术方案实施的形式上和细节上做出任何的修改与变化均在本发明要求保护的范围内。
本实施例提供液晶面板包括薄膜晶体管阵列基板，所述阵列基板上阵列设置有多个电荷分享型像素结构。参阅图1所示的电荷分享型像素结构的结构示 意图以及图2所示的该像素结构的等效电路图。该像素结构包括数据线D、第一扫描线S1、第二扫描线S2、共用电极配线COM、主像素单元、次像素单元以及电荷分享单元。
其中，主像素单元和次像素单元被配置为在所述第一条扫描线S1扫描信号的驱动下分别接收数据线D上的数据信号而具有相同的电压。具体地，主像素单元包括主像素电极P1和第一薄膜晶体管T1，该第一薄膜晶体管T1的栅极电性连接到第一扫描线S1，源极电性连接到数据线D，漏极电性连接到所述主像素电极P1。次像素单元包括次像素电极P2和第二薄膜晶体管T2，该第二薄膜晶体管T2的栅极电性连接到第一扫描线S1，源极电性连接到数据线D，漏极通过一天线L电性连接到次像素电极P2，所述天线L横跨所述主像素电极P1。
其中，电荷分享单元被配置为在所述第二条扫描线S2扫描信号的驱动下改变所述次像素单元的电压，使其与所述主像素单元的电压产生差异。具体地，电荷分享单元包括第三薄膜晶体管T3，该第三薄膜晶体管T3的栅极电性连接到第二扫描线S2，漏极电性连接到次像素电极P2，源极与主像素电极P1之间耦合形成第一电荷电容Ccs1，同时源极还与对应的共用电极配线COM之间耦合形成第二电荷电容Ccs2。
其中，在图2的等效电路图中，Cgs1为主像素单元的寄生电容，Cst1为主像素单元的储存电容，Clc1为主像素单元的液晶电容；Cgs2为次像素单元的寄生电容，Cst2为次像素单元的储存电容，Clc2为次像素单元的液晶电容。
如背景技术中介绍的，在液晶面板的制作过程中，包含有制程工艺以及转运，这个过程中会产生许多颗粒物(particle)，这些颗粒物一部分会被清洗机台所清洗掉，而部分颗粒物会残留于液晶面板上(Array side or CF side，阵列基板或彩膜基板)，这些残留于液晶面板上的颗粒物，会造成液晶面板点亮时产生亮点、亮(暗)线、碎亮点以及弱亮(暗)线等。
当颗粒物出现在如上结构的电荷分享型像素结构的次像素单元时，本发明实施例提供了如下的亮点修复方法。
参阅图5所示的像素结构的结构示意图以及图6所示的该像素结构的等效电路图。该方法具体包括步骤：
一、通过激光切割的方式，将所述第二薄膜晶体管T2的漏极与所述天线L的连接处断开绝缘(附图中采用x标示)，将所述天线L与所述次像素电极P2 的连接处断开绝缘(附图中采用x标示)。
二、通过激光切割的方式，将第三薄膜晶体管T3的漏极和源极的连接处断开绝缘(附图中采用x标示)，以使第三薄膜晶体管T3的漏极与所述次像素电极P2处于断开连接状态，并且使第三薄膜晶体管T3的源极与所述主像素电极P1和所述共用电极配线COM之间均处于断开连接状态。
三、通过激光焊接的方式，将所述天线L通过第一修补线L1电性连接至所述主像素电极P1。
四、通过激光焊接的方式，将所述次像素电极P2通过第二修补线L2电性连接至所述共用电极配线COM。
按照如上的方法，最终得到了经亮点修复后的液晶面板。该液晶面板的多个像素结构中，至少有一个像素结构是采用了如上亮点修复方法修复后的像素结构。另外，修复后的像素单元会形成暗点，但是暗点的数量也有一定规范，暗点颗数太多也会降低液晶面板的等级甚至报废。
综上所述，相比于现有技术，本发明实施例提供的液晶面板的亮点修复方法，在对电荷分享型像素结构的次像素单元进行亮点修复时，将横跨于主像素电极的天线两端均断开绝缘，并且将天线电性连接至主像素电极。经过该方法修复后的液晶面板中，天线与主像素电极之间不会形成储存电容，不增大主像素单元的储存电容，避免影响到主像素单元的馈通(feed through)电压，保证了液晶面板的显示质量。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (10)

  1. 一种经亮点修复后的液晶面板，该液晶面板包括阵列基板，所述阵列基板至少包括一经亮点修复后的像素结构，该像素结构包括：
    一数据线；
    第一扫描线和第二扫描线；
    一共用电极配线；
    主像素单元和次像素单元，被配置为在所述第一条扫描线扫描信号的驱动下分别接收数据线上的数据信号而具有相同的电压；所述主像素单元至少包括主像素电极，所述次像素单元至少包括次像素电极和第二薄膜晶体管，所述第二薄膜晶体管的漏极通过一天线连接到所述次像素电极，所述天线横跨所述主像素电极；
    电荷分享单元，被配置为在所述第二条扫描线扫描信号的驱动下改变所述次像素单元的电压，使其与所述主像素单元的电压产生差异；
    其中，所述次像素单元为因具有亮点缺陷而被修复为暗点后的像素单元，在被修复为暗点后的所述次像素单元中，所述第二薄膜晶体管的漏极与所述天线处于断开连接状态，所述天线与所述次像素电极处于断开连接状态，所述天线电性连接至所述主像素电极，所述次像素电极电性连接至所述共用电极配线；并且所述电荷分享单元与所述主像素单元和所述次像素单元均处于断开连接状态。
  2. 根据权利要求1所述的经亮点修复后的液晶面板，其中，所述断开连接状态是通过切割的方式使两个部件相互绝缘。
  3. 根据权利要求1所述的经亮点修复后的液晶面板，其中，所述天线通过第一修补线电性连接至所述主像素电极，所述次像素电极通过第二修补线电性连接至所述共用电极配线。
  4. 根据权利要求1所述的经亮点修复后的液晶面板，其中，所述主像素单元还包括第一薄膜晶体管，该第一薄膜晶体管的栅极电性连接到所述第一扫描线，源极电性连接到所述数据线，漏极电性连接到所述主像素电极。
  5. 根据权利要求1所述的经亮点修复后的液晶面板，其中，所述第二薄膜晶体管的栅极电性连接到所述第一扫描线，源极电性连接到所述数据线。
  6. 根据权利要求1所述的经亮点修复后的液晶面板，其中，所述电荷分享单元包括第三薄膜晶体管，将所述次像素单元修复为暗点后，所述第三薄膜晶体管的漏极与所述次像素电极处于断开连接状态，且所述第三薄膜晶体管的源极与所述主像素电极和所述共用电极配线之间均处于断开连接状态。
  7. 一种液晶面板的亮点修复方法，该液晶面板包括阵列基板，所述阵列基板至少包括一经亮点修复后的像素结构，该像素结构包括：
    一数据线；
    第一扫描线和第二扫描线；
    一共用电极配线；
    主像素单元和次像素单元，被配置为在所述第一条扫描线扫描信号的驱动下分别接收数据线上的数据信号而具有相同的电压；所述主像素单元至少包括主像素电极，所述次像素单元至少包括次像素电极和第二薄膜晶体管，所述第二薄膜晶体管的漏极通过一天线连接到所述次像素电极，所述天线横跨所述主像素电极；
    电荷分享单元，被配置为在所述第二条扫描线扫描信号的驱动下改变所述次像素单元的电压，使其与所述主像素单元的电压产生差异；
    其中，所述次像素单元为因具有亮点缺陷而被修复为暗点，该修复方法包括步骤：
    通过激光切割的方式，将所述第二薄膜晶体管的漏极与所述天线的连接处断开绝缘，将所述天线与所述次像素电极的连接处断开绝缘，将所述电荷分享单元与所述主像素单元和次像素单元的连接处均断开绝缘；
    通过激光焊接的方式，将所述天线电性连接至所述主像素电极，将所述次像素电极电性连接至所述共用电极配线。
  8. 根据权利要求7所述的液晶面板的亮点修复方法，其中，通过激光焊接修补线的方式，将所述天线电性连接至所述主像素电极，将所述次像素电极电性连接至所述共用电极配线。
  9. 根据权利要求7所述的液晶面板的亮点修复方法，其中，所述电荷分享单元包括第三薄膜晶体管，通过激光切割的方式，将所述第三薄膜晶体管的漏极与所述次像素电极的连接处断开绝缘，将所述第三薄膜晶体管的源极与所述主像素电极和所述共用电极配线之间的连接处均断开绝缘。
  10. 根据权利要求7所述的液晶面板的亮点修复方法，其中，所述主像素单元还包括第一薄膜晶体管，该第一薄膜晶体管的栅极电性连接到所述第一扫描线，源极电性连接到所述数据线，漏极电性连接到所述主像素电极。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111381406A (zh) * 2018-12-29 2020-07-07 咸阳彩虹光电科技有限公司 一种像素单元、像素阵列及其液晶面板
CN115582631A (zh) * 2022-09-23 2023-01-10 深圳市汇川技术股份有限公司 飞行加工方法、装置、激光平面切割设备及介质

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105093740B (zh) 2015-08-04 2018-07-17 深圳市华星光电技术有限公司 阵列基板、液晶显示面板及其液晶显示装置
US10985469B2 (en) * 2016-02-19 2021-04-20 Sharp Kabushiki Kaisha Scanning antenna and method for manufacturing same
CN105759522B (zh) * 2016-05-11 2019-01-22 深圳市华星光电技术有限公司 Tft基板的断线修复方法
CN107329296B (zh) * 2017-08-25 2020-05-29 深圳市华星光电技术有限公司 液晶面板暗点化修补方法及阵列基板结构
CN107490912A (zh) * 2017-09-06 2017-12-19 深圳市华星光电技术有限公司 一种阵列基板、显示面板及显示装置
TWI659253B (zh) * 2018-02-13 2019-05-11 友達光電股份有限公司 顯示裝置
CN111381408B (zh) * 2018-12-29 2023-04-25 咸阳彩虹光电科技有限公司 一种像素阵列及其液晶面板
CN110133927A (zh) * 2019-04-30 2019-08-16 深圳市华星光电半导体显示技术有限公司 显示面板及其修复方法
CN110376810A (zh) * 2019-06-10 2019-10-25 惠科股份有限公司 显示面板、显示面板亮点修复方法和显示装置
KR20210076761A (ko) * 2019-12-16 2021-06-24 엘지디스플레이 주식회사 게이트 드라이버 및 이를 포함하는 표시 장치
KR20210080781A (ko) 2019-12-23 2021-07-01 엘지디스플레이 주식회사 게이트 드라이버 및 이를 포함하는 표시 장치
KR20220004858A (ko) 2020-07-02 2022-01-12 삼성디스플레이 주식회사 화소 및 이를 구비하는 디스플레이 장치

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003202581A (ja) * 2002-01-08 2003-07-18 Matsushita Electric Ind Co Ltd 液晶表示装置およびその製造方法
US20050018100A1 (en) * 2003-07-25 2005-01-27 Shih-Wei Chen Method for repairing LCD light spots
CN101201519A (zh) * 2007-12-21 2008-06-18 友达光电股份有限公司 可自然暗点化液晶像素的液晶显示器以及其修补方法
CN101581840A (zh) * 2008-05-16 2009-11-18 北京京东方光电科技有限公司 液晶显示器及其修复断线的方法
CN102437112A (zh) * 2011-12-15 2012-05-02 昆山工研院新型平板显示技术中心有限公司 一种有源矩阵有机发光显示器基板像素电路的修补方法
CN103135303A (zh) * 2011-12-05 2013-06-05 上海中航光电子有限公司 一种tft像素结构及其点缺陷修复方法
CN103235428A (zh) * 2013-05-06 2013-08-07 深圳市华星光电技术有限公司 液晶面板的暗点修复方法及液晶面板

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3778411B2 (ja) * 1999-10-06 2006-05-24 シャープ株式会社 アクティブマトリックス型液晶表示装置およびその画素欠陥修正方法
KR100685942B1 (ko) * 2000-08-30 2007-02-23 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 구동방법
US7206048B2 (en) * 2003-08-13 2007-04-17 Samsung Electronics Co., Ltd. Liquid crystal display and panel therefor
JP2006126509A (ja) * 2004-10-28 2006-05-18 Sanyo Electric Co Ltd 暗点化方法および液晶表示装置
WO2006064832A1 (ja) * 2004-12-16 2006-06-22 Sharp Kabushiki Kaisha アクティブマトリクス基板、アクティブマトリクス基板の製造方法、表示装置、液晶表示装置およびテレビジョン装置
KR20060135425A (ko) * 2005-06-25 2006-12-29 엘지.필립스 엘시디 주식회사 액정 표시 패널, 그 제조방법, 그의 리페어 장치 및 그의리페어 방법
TW200909914A (en) * 2007-08-21 2009-03-01 Himax Tech Ltd Defect repairing method of liquid crystal display and signal transmission method of source driver and timing controller thereof
CN100592146C (zh) * 2007-10-29 2010-02-24 昆山龙腾光电有限公司 一种液晶显示装置阵列基板的修补方法
CN101424792A (zh) * 2007-11-02 2009-05-06 上海广电Nec液晶显示器有限公司 液晶显示装置的点缺陷修复方法
KR101502916B1 (ko) * 2007-11-06 2015-03-17 삼성디스플레이 주식회사 표시 기판과, 이의 불량 화소 리페어 방법
CN101442058B (zh) * 2008-12-16 2010-12-22 昆山龙腾光电有限公司 薄膜晶体管阵列基板及其修补方法
TWI395000B (zh) * 2009-03-18 2013-05-01 Au Optronics Corp 平面顯示面板及其亮點修補方法
KR101992893B1 (ko) * 2012-10-23 2019-06-25 엘지디스플레이 주식회사 평판 표시 장치 및 이의 제조 방법
CN103839961B (zh) * 2012-11-23 2017-09-01 上海天马微电子有限公司 像素单元、显示装置以及缺陷修复方法
KR102031681B1 (ko) * 2012-12-05 2019-10-15 엘지디스플레이 주식회사 액정표시 패널의 수리 장치 및 그 방법
KR101993334B1 (ko) * 2013-04-01 2019-06-27 삼성디스플레이 주식회사 유기 발광 표시 장치, 유기 발광 표시 장치의 리페어 방법 및 유기 발광 표시 장치의 구동 방법
CN103792747B (zh) * 2014-02-10 2016-05-04 北京京东方显示技术有限公司 一种阵列基板及其制作方法、修复方法及显示装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003202581A (ja) * 2002-01-08 2003-07-18 Matsushita Electric Ind Co Ltd 液晶表示装置およびその製造方法
US20050018100A1 (en) * 2003-07-25 2005-01-27 Shih-Wei Chen Method for repairing LCD light spots
CN101201519A (zh) * 2007-12-21 2008-06-18 友达光电股份有限公司 可自然暗点化液晶像素的液晶显示器以及其修补方法
CN101581840A (zh) * 2008-05-16 2009-11-18 北京京东方光电科技有限公司 液晶显示器及其修复断线的方法
CN103135303A (zh) * 2011-12-05 2013-06-05 上海中航光电子有限公司 一种tft像素结构及其点缺陷修复方法
CN102437112A (zh) * 2011-12-15 2012-05-02 昆山工研院新型平板显示技术中心有限公司 一种有源矩阵有机发光显示器基板像素电路的修补方法
CN103235428A (zh) * 2013-05-06 2013-08-07 深圳市华星光电技术有限公司 液晶面板的暗点修复方法及液晶面板

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111381406A (zh) * 2018-12-29 2020-07-07 咸阳彩虹光电科技有限公司 一种像素单元、像素阵列及其液晶面板
CN115582631A (zh) * 2022-09-23 2023-01-10 深圳市汇川技术股份有限公司 飞行加工方法、装置、激光平面切割设备及介质

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