WO2016166888A1 - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
WO2016166888A1
WO2016166888A1 PCT/JP2015/061864 JP2015061864W WO2016166888A1 WO 2016166888 A1 WO2016166888 A1 WO 2016166888A1 JP 2015061864 W JP2015061864 W JP 2015061864W WO 2016166888 A1 WO2016166888 A1 WO 2016166888A1
Authority
WO
WIPO (PCT)
Prior art keywords
light receiving
imaging device
electrodes
receiving surface
wiring board
Prior art date
Application number
PCT/JP2015/061864
Other languages
English (en)
French (fr)
Inventor
中山　高志
Original Assignee
オリンパス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by オリンパス株式会社 filed Critical オリンパス株式会社
Priority to JP2017512170A priority Critical patent/JPWO2016166888A1/ja
Priority to CN201580078804.6A priority patent/CN107534713A/zh
Priority to PCT/JP2015/061864 priority patent/WO2016166888A1/ja
Publication of WO2016166888A1 publication Critical patent/WO2016166888A1/ja
Priority to US15/786,093 priority patent/US10334143B2/en

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B1/00—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor
    • A61B1/04—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances
    • A61B1/05—Instruments for performing medical examinations of the interior of cavities or tubes of the body by visual or photographical inspection, e.g. endoscopes; Illuminating arrangements therefor combined with photographic or television appliances characterised by the image sensor, e.g. camera, being in the distal end portion
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    • H04N23/555—Constructional details for picking-up images in sites, inaccessible due to their dimensions or hazardous conditions, e.g. endoscopes or borescopes
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Definitions

  • an imaging element in which a plurality of electrodes electrically connected to a light receiving unit are arranged in a row, and a plurality of wirings joined to each of the plurality of electrodes in the imaging element are arranged in a row And a wiring board.
  • the imaging device manufactured by the wafer level CSP technology is small, it greatly contributes to the diameter reduction of the endoscope.
  • a plurality of light receiving portions and a plurality of light receiving surface electrodes electrically connected to the respective light receiving portions are formed on the light receiving surface of the semiconductor wafer.
  • the light receiving unit is a pixel area made of a complementary metal oxide semiconductor (CMOS) image sensor, a charge coupled device (CCD), or the like.
  • CMOS complementary metal oxide semiconductor
  • CCD charge coupled device
  • a glass wafer is bonded to the light receiving surface of the semiconductor wafer to produce a bonded wafer.
  • a plurality of through wires reaching the opposing surface from the light receiving surface of the bonded wafer are formed.
  • the light receiving surface of the imaging device obtained by cutting the bonded wafer is covered with a cover glass.
  • the light receiving unit since the light receiving unit is connected to the electrode on the opposing surface through the through wiring, it can transmit and receive electrical signals.
  • JP-A-2014-75764 discloses an imaging device 101 shown in FIG.
  • the imaging device 101 arranges a plurality of connection wirings in one through trench 110T instead of the plurality of through wirings.
  • the imaging device 101 includes an imaging element 110 to which a cover glass 130 is bonded by an adhesive layer 120, a wiring board 140, and a signal cable 150.
  • a through trench 110T whose wall surface is inclined is formed.
  • the cover glass 130 and the adhesive layer 120 extend to the outside of the end of the inclined surface, that is, to the bottom of the through trench 110T. Since the light receiving surface electrode 112 of the light receiving surface 110SA is extended to the bottom surface of the through trench 110T, the back surface of the light receiving surface electrode 112 is exposed at the bottom surface of the through trench 110T.
  • a plurality of junction electrodes 114 extending from the bottom surface of the through trench 110T (immediately above the light receiving surface electrode 112) are arranged in a row on the inclined wall surface (inclined surface) 110SS of the through trench 110T. Bumps 115 are disposed on the bonding electrode 114.
  • the inclined surface 110SS is inclined with respect to the light receiving surface 10SA of the imaging element 110 at a first inclination angle ⁇ 1 which is an acute angle.
  • Each of the plurality of bonding electrodes 114 is bonded to the plurality of bonding electrodes 141 arranged in a row at the end of the main surface 140SA of the wiring board 140 via the bumps 115. That is, in the wiring board 140, the main surface 140SA is inclined with respect to the facing surface 110SB of the imaging element 110 at a first inclination angle ⁇ 1.
  • a signal cable 150 is bonded to a second bonding electrode (not shown) at the other end of the wiring board 140.
  • the outer size (the dimension in plan view) of the imaging device 101 is equal to the outer size of the imaging device 110. It is the same.
  • the imaging element 110 and the wiring board 140 are fixed only at the bonding portion between the bonding electrode 114 and the bonding electrode 141. For this reason, the imaging device 101 is likely to be damaged when the mechanical strength is insufficient and is handled, and the yield may not be high.
  • An object of the present invention is to provide an imaging device with high yield.
  • the light receiving surface on which the light receiving portion is formed, the facing surface facing the light receiving surface, and the light receiving surface are inclined at a first acute angle.
  • the imaging device is extended to the outside of the end side, and the back surface of the light receiving surface electrode is exposed to the opposite surface side, and the tip of each of the plurality of wires is at the first angle.
  • the light-receiving surface electrode bent at a second angle which is in a complementary relationship with Of a respective electrically the attached flying lead, the distal end portion of the wiring board is fixed to the opposed surface of the imaging element.
  • an imaging device with high yield can be provided.
  • FIG. 3 is a cross-sectional view taken along the line III-III of FIG. 2 of the imaging device of the first embodiment. It is a perspective view of an imaging device of a 2nd embodiment.
  • FIG. 5 is a cross-sectional view of the imaging device of the second embodiment taken along the line VV of FIG. 4; It is a perspective view of an imaging device of a 3rd embodiment.
  • FIG. 7 is a cross-sectional view of the imaging device of the third embodiment taken along the line VII-VII of FIG. 6; It is sectional drawing of the imaging device of 4th Embodiment. It is a perspective view of an imaging device of a 5th embodiment.
  • FIG. 10 is a cross-sectional view of the imaging device of the fifth embodiment taken along the line XX in FIG. 9;
  • an imaging device 1 according to a first embodiment of the present invention will be described with reference to the drawings.
  • the drawings are schematic, and the relationship between the thickness and the width of each member, the ratio of the thickness of each member, the number of bonding electrodes, the arrangement pits, and the like are different from actual ones.
  • parts having different dimensional relationships and proportions are included among the drawings.
  • some configurations, for example, a silicon oxide layer on the surface of a silicon substrate, wiring, and the like are not shown, and electronic components and the like may be omitted.
  • the imaging device 1 includes an imaging element 10 made of a silicon substrate, a cover glass 30 which is a transparent member, a wiring board 40, and a signal cable 50.
  • the light receiving surface 10SA of the imaging element 10 is covered with a cover glass 30 via an adhesive layer 20.
  • the imaging device 10 has substantially the same configuration as the imaging device 110 of the conventional imaging device 101 described above. That is, the imaging element 10 made of silicon has a light receiving surface 10SA in which the light receiving portion 11 is formed, an opposing surface 10SB facing the light receiving surface 10SA, and a first angle ⁇ 1 at an acute angle with respect to the light receiving surface 10SA. And an inclined surface 10SS that is inclined. A plurality of light receiving surface electrodes 12 electrically connected to the light receiving portion 11 are formed on the light receiving surface 10SA.
  • the inclined surface 10SS inclined at the first angle ⁇ 1 with respect to the light receiving surface 10SA is not a through trench (10T) but a notch 10TT. It is. That is, when the cutting line for cutting the bonded wafer is at the bottom of the through trench, the through trench becomes a notch 10TT by cutting.
  • Anisotropic etching can be preferably used to form the through trench having the inclined surface 10SS.
  • anisotropic etching a wet etching method using a tetramethyl ammonium hydroxide (TMAH) aqueous solution, a potassium hydroxide (KOH) aqueous solution or the like is desirable, but reactive ion etching (RIE), chemical dry etching (CDE), etc. Dry etching can also be used.
  • TMAH tetramethyl ammonium hydroxide
  • KOH potassium hydroxide
  • RIE reactive ion etching
  • CDE chemical dry etching
  • the etching speed of the (111) plane is slower than that of the (100) plane.
  • the wall surface of is the (111) plane, and the angle ⁇ 1 with the (100) plane which is the light receiving surface 10SA is the inclined surface of 54.74 degrees.
  • the cover glass 30, the adhesive layer 20, and the light-receiving surface electrode 12 of the imaging element 10 are extended to the outside of the end of the inclined surface 10SS of the notch 10TT (bottom surface of the through trench 110T).
  • the light receiving surface electrode 12 is disposed on the light receiving surface of the silicon wafer to be the imaging device 10, and the cover glass 30 is adhered on the light receiving surface electrode 12 via the adhesive layer 20.
  • the adhesive layer 20 is made of, for example, a transparent ultraviolet curable resin.
  • a microlens array may be disposed on the light receiving unit 11, and the periphery of the light receiving unit 11 may be bonded with an adhesive layer.
  • the silicon wafer to which the glass wafer to be the cover glass 30 is bonded is etched and removed from the facing surface 10SB side. Therefore, the back surface of the light-receiving surface electrode 12 is exposed on the bottom surface of the notch 10TT, in other words, on the outer side of the end of the inclined surface 10SS.
  • bumps 15 of a plurality of inclined surface electrodes 13 electrically connected to the light receiving surface electrode 12 are arranged in a row on the inclined surface 10SS.
  • the inclined surface electrode 13 partially disposed on the back surface of the light receiving surface electrode 12 is electrically connected to the light receiving portion 11.
  • the wiring board 40 is a flexible wiring board which uses, for example, polyimide as an insulating layer.
  • the tip of the second main surface 40SB of the wiring board 40 is fixed to the facing surface 10SB of the imaging element 10 via the adhesive layer 18 made of, for example, a thermosetting resin.
  • An electronic component 69 such as a chip capacitor is mounted on the first main surface 40SA. Note that the electronic component 69 may be mounted on the second main surface 40SB as well.
  • flying leads 41 are arranged in a row at the end face.
  • the flying lead 41 is referred to as an outer lead in the lead frame, and is a tip end portion of the conductor wiring 41W from which the insulating base of the wiring board 40 is selectively removed.
  • the flying leads 41 can be easily bent.
  • the flying lead 41 is bent at a second angle ⁇ 2 that is complementary to the first angle ⁇ 1. That is, the sum of the first angle ⁇ 1 and the second angle ⁇ 2 is 180 degrees.
  • the flying lead 41 has a base end parallel to the facing surface 10SB, but a tip end substantially parallel to the inclined surface 10SS.
  • the tip of the flying lead 41 is joined to the inclined surface electrode 13 of the inclined surface 10SS of the imaging element 10 via the bump 15.
  • the bumps 15 are, for example, solder bumps made of Sn alloy disposed by frame plating, or gold stud bumps or the like.
  • the wiring board 40 has conductor wiring (not shown) on the first main surface 40SA and the second main surface 40SB as well as the wiring 41W of the intermediate layer whose front end portion is the flying lead 41.
  • a multilayer wiring board having insulating layers between the first major surface 40SA and the intermediate layer, and between the second major surface 40SB and the intermediate layer.
  • it can be used as the wiring board 40 if the tip of the wiring 41 W is the flying lead 41.
  • the junction between the flying lead 41 and the inclined surface electrode 13 may be sealed by a sealing resin.
  • the conducting wire 51 of the signal cable 50 is joined to the joining electrode 42 arranged in a row on the rear end side of the second main surface 40SB of the wiring board 40.
  • the signal cable 50 is also accommodated in the projection plane of the imaging device 10.
  • the plurality of bonding electrodes 42 may be disposed on the first main surface 40SA of the wiring board 40 or may be disposed on the first main surface 40SA and the second main surface 40SB. .
  • the wiring board 40 and the imaging element 10 are not only at the junction of the flying lead 41 and the inclined surface electrode 13, but also with the second main surface 40SB at the tip of the wiring board 40 arranged in parallel.
  • the facing surface 10SB of the imaging element 10 is fixed by the adhesive layer 18. Therefore, the imaging device 1 is less likely to be damaged when handled, is easy to manufacture, and is inexpensive because the yield is high.
  • the wiring board 40 is entirely disposed in the region inside the imaging device 10, that is, in the projection plane of the imaging device 10, as viewed in plan in the thickness direction of the imaging device 10.
  • the wiring board 40 may be a non-flexible substrate made of glass epoxy resin or the like, but in the case of a long length, at least only the bending area is required to be accommodated in the projection plane of the imaging device 10. It must be flexible.
  • the imaging device 1 has a small diameter because the wiring board 40 and the signal cable 50 do not protrude outside the outer shape of the imaging device 10.
  • the end of the wiring board 40 may be bonded to substantially the entire surface of the facing surface 10SB of the imaging device 10, or the bending angle may be an obtuse angle as long as the wiring board 40 can be accommodated in the projection plane of the imaging device 10. Furthermore, the wiring board 40 may not only be bent at the joint end with the imaging device 10, but may be further bent at the rear end.
  • an imaging device 1A according to a modification of the second embodiment will be described. Since the imaging device 1A is similar to the imaging device 1 and has the same effect, the same reference numeral is given to the component of the same function, and the description is omitted. Further, in the following drawings, illustration of the electronic component is omitted.
  • the plurality of flying leads 41 are composed of a plurality of first flying leads 41A and a plurality of second flying leads 41B.
  • the first flying leads 41A and the second flying leads 41B are alternately arranged.
  • the first flying lead 41A is joined to the inclined surface electrode 13 of the inclined surface 10SS via the bump 15A
  • the second flying lead 41B is joined to the light receiving surface electrode 12 via the bump 15B.
  • the bumps 15A and the bumps 15B may be the same type of bump, or one may be a solder bump and the other may be a stud bump.
  • the flying leads 41A and 41B adjacent to each other at the joint portion may be shorted.
  • the image pickup apparatus 1A As in the case of the image pickup element 110 of the conventional image pickup apparatus 101, it is a through trench (10T) that uses the inclined surface 10SS inclined at the first angle ⁇ 1 as the wall surface. Then, in the imaging device 1A, the wiring board 40A and the signal cable 50 located on the rear side (opposite side of the cover glass 30) of the imaging device 10A are viewed from the thickness direction of the imaging device 10 in plan view. The whole is disposed in the area of (1), that is, in the projection plane of the imaging device 10A.
  • an imaging device 1B according to a modification of the third embodiment will be described. Since the imaging device 1B is similar to the imaging devices 1 and 1A and has the same effect, the same reference numeral is given to the component of the same function, and the description is omitted.
  • the flying leads 41B of the wiring board 40B of the imaging device 1B are joined to the back surface of the light receiving surface electrode 12 via the bumps 15B.
  • the bumps 15B on the back surface of the light receiving surface electrode 12 of the imaging element 10B are, for example, solder bumps made of Sn alloy or the like disposed by frame plating.
  • the imaging device 1 ⁇ / b> B is easier to manufacture than the imaging device 1 because it is not necessary to dispose the inclined surface electrode.
  • the imaging device 1C is similar to the imaging devices 1, 1A, and 1B, and has the same effect.
  • the flying leads 41B of the wiring board 40C of the imaging device 1C are joined to the inclined surface electrodes 13 of the imaging element 10C through the bumps 15A, and further with the light receiving surface electrodes 12 through the bumps 15B. It is joined.
  • the imaging device 1C has high bonding reliability because the flying leads are joined at two places.
  • the bumps 15A and the bumps 15B may be the same type of bumps, but it is preferable that one be a solder bump and the other be a stud bump.
  • the imaging device joined at two places by different joining methods has higher joining reliability.
  • an imaging device 1D according to a modification of the fifth embodiment will be described. Since the imaging device 1D is similar to the imaging devices 1 and 1A to 1C and has the same effect, the same reference numeral is given to the component having the same function, and the description is omitted.
  • a thick solder layer 15D is formed on the inclined surface electrode 13 and the light receiving surface electrode 12 of the imaging element 10D of the imaging device 1C.
  • the flying leads 41D of the wiring board 40D are joined to the inclined surface electrode 13 and the light receiving surface electrode 12 through the solder layer 15D by the solder layer 15D.
  • the solder layer 15D is made of, for example, a Sn alloy disposed by frame plating.
  • the plurality of first bonding electrodes 19 are disposed on the facing surface 10SB of the imaging element 10D, and the tip portion (tip surface) of the first main surface 40SA of the wiring board 40D is provided.
  • a plurality of second bonding electrodes 49 are provided. The first bonding electrode 19 is soldered to the second bonding electrode 49.
  • the plurality of first bonding electrodes 19 and the plurality of second bonding electrodes 49 are arranged in the same matrix.
  • Bumps (not shown) are disposed on the first bonding electrode 19.
  • the bumps are made of, for example, a Sn alloy disposed by frame plating.
  • the imaging device 1D has high junction reliability because the junction between the flying lead 41D and the inclined surface electrode 13 is long (wide). In addition, since the generated heat is transferred from the facing surface 10SB to the wiring board 40D through the first bonding electrode 19 and the second bonding electrode 49, the image pickup element 10D does not easily have a high temperature. Therefore, the operation of the imaging device 1D is stable.
  • imaging device 10 imaging element 10SA: light receiving surface 10SB: facing surface 10SS: inclined surface 11: light receiving portion 12: light receiving surface electrode 13: inclined surface electrode 15: bump 18: adhesive layer 19: first Bonding electrode 20: Adhesive layer 30: Cover glass 40: Wiring board 40 W: Wiring 41: Flying lead 42: Bonding electrode 49: Second bonding electrode 50: Signal cable

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Abstract

撮像装置１は、受光面１０ＳＡと対向面１０ＳＢと第１の角度θ１で傾斜している傾斜面１０ＳＳとを有し、受光面１０ＳＡに複数の受光面電極１２が形成されている撮像素子１０と、カバーガラス３０と、複数の受光面電極１２のそれぞれと、それぞれが接続されている複数の配線４１Ｗを有する配線板４０と、を具備し、カバーガラス３０および複数の受光面電極１２が傾斜面１０ＳＳの端辺の外側まで延設されており受光面電極１２の裏面が対向面側に露出しており、配線４１Ｗの先端部が、第１の角度θ１に対して補角の関係にある第２の角度θ２に曲がった、受光面電極１２と電気的に接続されているフライングリードであり、配線板４０の先端部が撮像素子１０の対向面１０ＳＢに固定されている。

Description

撮像装置
　本発明は、受光部と電気的に接続されている複数の電極が列設されている撮像素子と、前記撮像素子の前記複数の電極のそれぞれと接合されている複数の配線が列設されている配線板と、を具備する撮像装置に関する。
　ウエハレベルＣＳＰ技術により作製される撮像装置は小型であるため、内視鏡の細径化に大きく寄与している。
　ウエハレベルＣＳＰ型の撮像装置の製造方法では、最初に、半導体ウエハの受光面に、複数の受光部と、それぞれの受光部と電気的に接続された複数の受光面電極が形成される。受光部は、ＣＭＯＳ（Complementary Metal Oxide Semiconductor）イメージセンサ、または、ＣＣＤ（Charge Coupled Device）等からなる画素エリアである。半導体ウエハの受光面にガラスウエハが接着されて接合ウエハが作製される。そして、接合ウエハの受光面から対向する対向面まで到達する複数の貫通配線が形成される。
　接合ウエハの切断により得られた撮像素子の受光面はカバーガラスで覆われている。しかし、受光部は貫通配線を介して対向面の電極と接続されているため、電気信号を送受信できる。
　日本国特開２０１４－７５７６４号公報には、図１に示す撮像装置１０１が開示されている。撮像装置１０１は、複数の貫通配線に替えて、１つの貫通トレンチ１１０Ｔに複数の接続配線を配置している。
　撮像装置１０１は、カバーガラス１３０が接着層１２０により接着されている撮像素子１１０と、配線板１４０と、信号ケーブル１５０と、を有する。撮像素子１１０には壁面が傾斜している貫通トレンチ１１０Ｔが形成されている。カバーガラス１３０および接着層１２０は、前記傾斜面の端辺の外側、すなわち、貫通トレンチ１１０Ｔの底面まで延設されている。受光面１１０ＳＡの受光面電極１１２は貫通トレンチ１１０Ｔの底面まで延設されているため、受光面電極１１２の裏面が貫通トレンチ１１０Ｔの底面に露出している。貫通トレンチ１１０Ｔの傾斜している壁面（傾斜面）１１０ＳＳには、それぞれが貫通トレンチ１１０Ｔの底面（受光面電極１１２の直上）から延設された複数の接合電極１１４が列設されている。接合電極１１４にはバンプ１１５が配設されている。なお、傾斜面１１０ＳＳは撮像素子１１０の受光面１０ＳＡに対して鋭角の第１の傾斜角度θ１で傾斜している。
　複数の接合電極１１４のそれぞれは、バンプ１１５を介して配線板１４０の主面１４０ＳＡの端部に列設された複数の接合電極１４１と接合されている。すなわち、配線板１４０は主面１４０ＳＡが、撮像素子１１０の対向面１１０ＳＢに対して第１の傾斜角度θ１で傾斜している。そして、配線板１４０のもう一方の端部の第２の接合電極（不図示）には信号ケーブル１５０が接合されている。
　なお、可撓性を有する配線板１４０および信号ケーブル１５０は、撮像素子１１０の投影面内に配置されているため、撮像装置１０１の外寸（平面視寸法）は、撮像素子１１０の外寸と同じである。
　しかし、撮像装置１０１では、撮像素子１１０と配線板１４０とが、接合電極１１４と接合電極１４１との接合部だけで固定されている。このため、撮像装置１０１は、機械的強度が十分ではなく取り扱うときに破損しやすく、歩留まりが高くはないおそれがあった。
特開２０１４－０７５７６４号公報
　本発明は、歩留まりの高い撮像装置を提供することを目的とする。
　本発明の実施形態の撮像装置は、受光部が形成されている受光面と、前記受光面と対向している対向面と、前記受光面に対して鋭角の第１の角度で傾斜している傾斜面と、を有し、前記受光面に前記受光部と電気的に接続された複数の受光面電極が形成されている、撮像素子と、前記受光面を覆うように接着されている透明部材と、前記撮像素子の前記複数の受光面電極のそれぞれと、それぞれが接続されている複数の配線を有する配線板と、を具備し、前記透明部材および前記複数の受光面電極が前記傾斜面の端辺の外側まで延設されており、前記受光面電極の裏面が前記対向面側に露出している撮像装置であって、前記複数の配線のそれぞれの先端部が、前記第１の角度に対して補角の関係にある第２の角度に曲がった、前記受光面電極のそれぞれと電気的に接続されているフライングリードであり、前記配線板の先端部が、前記撮像素子の前記対向面に固定されている。
　本発明によれば、歩留まりの高い撮像装置を提供できる。
従来の撮像装置の斜視図である。 第１実施形態の撮像装置の斜視図である。 第１実施形態の撮像装置の図２のＩＩＩ－ＩＩＩ線に沿った断面図である。 第２実施形態の撮像装置の斜視図である。 第２実施形態の撮像装置の図４のＶ－Ｖ線に沿った断面図である。 第３実施形態の撮像装置の斜視図である。 第３実施形態の撮像装置の図６のＶＩＩ－ＶＩＩ線に沿った断面図である。 第４実施形態の撮像装置の断面図である。 第５実施形態の撮像装置の斜視図である。 第５実施形態の撮像装置の図９のＸ－Ｘ線に沿った断面図である。
＜第１実施形態＞
　以下、図面を参照して本発明の第１実施形態の撮像装置１を説明する。尚、図面は模式的なものであり、各部材の厚みと幅との関係、それぞれの部材の厚みの比率、接合電極の数、配列ピットなどは現実のものとは異なる。また、図面の相互間においても互いの寸法の関係や比率が異なる部分が含まれている。さらに、一部の構成、例えば、シリコン基板の表面の酸化シリコン層および配線等は図示を省略している、また、電子部品等の図示を省略する場合がある。
　図２および図３に示すように、撮像装置１は、シリコン基板からなる撮像素子１０と、透明部材であるカバーガラス３０と、配線板４０と、信号ケーブル５０と、を具備する。撮像素子１０の受光面１０ＳＡは接着層２０を介してカバーガラス３０に覆われている。
　撮像素子１０は、すでに説明した従来の撮像装置１０１の撮像素子１１０と略同じ構成である。すなわち、シリコンからなる撮像素子１０は、受光部１１が形成されている受光面１０ＳＡと、受光面１０ＳＡと対向している対向面１０ＳＢと、受光面１０ＳＡに対して鋭角の第１の角度θ１で傾斜している傾斜面１０ＳＳと、を有する。受光面１０ＳＡには、受光部１１と電気的に接続された複数の受光面電極１２が形成されている。
　ただし、撮像素子１１０と異なり、撮像素子１０では、受光面１０ＳＡに対して第１の角度θ１に傾斜している傾斜面１０ＳＳを壁面とするのは、貫通トレンチ（１０Ｔ）ではなく、切り欠き１０ＴＴである。すなわち、接合ウエハを切断するときの切断線が貫通トレンチの底面にある場合には、切断により貫通トレンチは切り欠き１０ＴＴとなる。
　傾斜面１０ＳＳを有する貫通トレンチの形成には、異方性エッチングを好ましく用いることができる。異方性エッチングとしては、水酸化テトラメチルアンモニウム（ＴＭＡＨ）水溶液、水酸化カリウム（ＫＯＨ）水溶液などを用いるウエットエッチング法が望ましいが、反応性イオンエッチング（ＲＩＥ）、ケミカルドライエッチング（ＣＤＥ）などのドライエッチング法も用いることができる。
　たとえば、撮像素子１０として受光面１０ＳＡが（１００）面のシリコン基板を用いた場合には、（１１１）面のエッチング速度が（１００）面に比べて遅い異方性エッチングとなるため、貫通トレンチの壁面は（１１１）面となり、受光面１０ＳＡである（１００）面との角度θ１が５４．７４度の傾斜面となる。
　撮像素子１０のカバーガラス３０、接着層２０および受光面電極１２は、切り欠き１０ＴＴの傾斜面１０ＳＳの端辺の外側（貫通トレンチ１１０Ｔの底面）まで延設されている。製造時には、撮像素子１０となるシリコンウエハの受光面に受光面電極１２が配設され、受光面電極１２上に接着層２０を介してカバーガラス３０が接着される。接着層２０は、例えば、透明な紫外線硬化型樹脂からなる。なお、受光部１１の上にマイクロレンズアレイを配設し、受光部１１の周囲を接着層により接着してもよい。
　カバーガラス３０となるガラスウエハが接合されたシリコンウエハが、対向面１０ＳＢ側からエッチングされて除去されている。このため、切り欠き１０ＴＴの底面、言い替えれば傾斜面１０ＳＳの端辺の外側には受光面電極１２の裏面が露出している。
　そして、傾斜面１０ＳＳには、それぞれが受光面電極１２と電気的に接続された複数の傾斜面電極１３のバンプ１５が列設されている。受光面電極１２の裏面上に一部が配設されている傾斜面電極１３は、受光部１１と電気的に接続されている。
　配線板４０は、例えばポリイミドを絶縁層とするフレキシブル配線板である。そして、配線板４０の第２の主面４０ＳＢの先端部は、例えば熱硬化型樹脂からなる接着層１８を介して、撮像素子１０の対向面１０ＳＢに固定されている。
　第１の主面４０ＳＡにはチップコンデンサ等の電子部品６９が実装されている。なお、第２の主面４０ＳＢにも電子部品６９が実装されていてもよい。
　配線板４０は、端面にフライングリード４１が列設されている。フライングリード４１は、リードフレームではアウターリードとよばれており、配線板４０の絶縁性基体が選択的に除去された導体配線４１Ｗの先端部である。フライングリード４１は容易に折り曲げることができる。フライングリード４１は、第１の角度θ１に対して補角の関係にある第２の角度θ２で折り曲げられている。すなわち、第１の角度θ１と第２の角度θ２とは加算すると１８０度である。このため、フライングリード４１は、基端部は、対向面１０ＳＢに平行であるが、先端部は傾斜面１０ＳＳと略平行になっている。そして、フライングリード４１の先端部は、バンプ１５を介して、撮像素子１０の傾斜面１０ＳＳの傾斜面電極１３と接合されている。バンプ１５は、例えば、フレームめっき法により配設されたＳｎ合金からなる半田バンプ、または、金スタッドバンプ等である。
　なお、配線板４０は、先端部がフライングリード４１となっている中間層の配線４１Ｗだけでなく、第１の主面４０ＳＡと第２の主面４０ＳＢとにも、それぞれ導体配線（不図示）を有し、第１の主面４０ＳＡと中間層との間、および第２の主面４０ＳＢと中間層との間に、それぞれ絶縁層を有する多層配線板である。しかし、単層配線板または両面配線板であっても、配線４１Ｗの先端部がフライングリード４１であれば配線板４０として用いることができる。
　また、フライングリード４１と傾斜面電極１３との接合箇所は封止樹脂により封止されていてもよい。
　配線板４０の第２の主面４０ＳＢの後端部側に列設された接合電極４２に、信号ケーブル５０の導線５１が接合されている。信号ケーブル５０も撮像素子１０の投影面内に収容されている。なお、複数の接合電極４２は、配線板４０の第１の主面４０ＳＡに配設されていてもよいし、第１の主面４０ＳＡおよび第２の主面４０ＳＢに配設されていてもよい。
　撮像装置１は、配線板４０と撮像素子１０とが、フライングリード４１と傾斜面電極１３との接合箇所だけでなく、平行に配置された配線板４０の先端部の第２の主面４０ＳＢと、撮像素子１０の対向面１０ＳＢとが、接着層１８により固定されている。このため、撮像装置１は取り扱うときに破損するおそれが小さく、製造が容易で、かつ、歩留まりが高いため安価である。
　また、配線板４０は、撮像素子１０と接着されていない後端部は折り曲げられている。このため、配線板４０は、撮像素子１０の厚み方向から平面視すると、撮像素子１０の内側の領域、すなわち撮像素子１０の投影面内に、全体が配置されている。配線板４０は、ガラスエポキシ樹脂等からなる非可撓性基板であってもよいが、長さが長い場合には、撮像素子１０の投影面内に収容するためには、少なくとも折り曲げ領域だけは可撓性でなければならない。
　撮像装置１は、配線板４０および信号ケーブル５０が撮像素子１０の外形よりも外側にはみ出していないため、細径である。
　なお、配線板４０の長さが短い場合には、非可撓性配線板であっても撮像素子１０の投影面内に収容できることは言うまでも無い。
　また、配線板４０は先端部が撮像素子１０の対向面１０ＳＢの略全面と接着されていてもよいし、撮像素子１０の投影面内に収容することができれば、折り曲げ角度は鈍角でもよい。さらに、配線板４０は撮像素子１０との接合端部が折り曲げられているだけでなく、後端部がさらに折り曲げられていてもよい。
＜第２実施形態＞
　次に第２実施形態の変形例の撮像装置１Ａについて説明する。撮像装置１Ａは、撮像装置１と類似し、同じ効果を有しているため、同じ機能の構成要素には同じ符号を付し説明は省略する。また、以下の図においては、電子部品の図示は省略する。
　図４および図５に示すように、撮像装置１Ａの配線板４０Ａでは、複数のフライングリード４１が複数の第１のフライングリード４１Ａと複数の第２のフライングリード４１Ｂとからなる。第１のフライングリード４１Ａと第２のフライングリード４１Ｂとは、交互に配置されている。
　そして、第１のフライングリード４１Ａが、傾斜面１０ＳＳの傾斜面電極１３とバンプ１５Ａを介して接合されており、第２のフライングリード４１Ｂが、受光面電極１２とバンプ１５Ｂを介して接合されている。バンプ１５Ａとバンプ１５Ｂは、同じ種類のバンプでもよいし、一方が半田バンプで他方がスタッドバンプでもよい。
　撮像装置１Ａは、複数のフライングリード４１の配設間隔が狭くても、接合部において隣り合うフライングリード４１Ａ、４１Ｂが短絡するおそれがない。
　なお、撮像装置１Ａでは、従来の撮像装置１０１の撮像素子１１０と同じように、第１の角度θ１に傾斜している傾斜面１０ＳＳを壁面とするのは、貫通トレンチ（１０Ｔ）である。そして、撮像装置１Ａでは、撮像素子１０Ａよりも後方側（カバーガラス３０と反対側）に位置する配線板４０Ａおよび信号ケーブル５０は、撮像素子１０の厚み方向から平面視すると、撮像素子１０の内側の領域、すなわち撮像素子１０Ａの投影面内に、全体が配置されている。
＜第３実施形態＞
　次に第３実施形態の変形例の撮像装置１Ｂについて説明する。撮像装置１Ｂは、撮像装置１、１Ａと類似し、同じ効果を有しているため、同じ機能の構成要素には同じ符号を付し説明は省略する。
　図６および図７に示すように、撮像装置１Ｂの配線板４０Ｂのフライングリード４１Ｂは、バンプ１５Ｂを介して受光面電極１２の裏面と接合されている。
　撮像素子１０Ｂの受光面電極１２の裏面のバンプ１５Ｂは、例えば、フレームめっき法により配設されたＳｎ合金からなる半田バンプ等である。
　撮像装置１Ｂは、傾斜面電極を配設する必要がないので、撮像装置１よりも製造が容易である。
＜第４実施形態＞
　次に第４実施形態の変形例の撮像装置１Ｃについて説明する。撮像装置１Ｃは、撮像装置１、１Ａ、１Ｂと類似し、同じ効果を有しているため、同じ機能の構成要素には同じ符号を付し説明は省略する。
　図８に示すように、撮像装置１Ｃの配線板４０Ｃのフライングリード４１Ｂは、撮像素子１０Ｃの傾斜面電極１３とバンプ１５Ａを介して接合されており、さらにバンプ１５Ｂを介して受光面電極１２と接合されている。
　撮像装置１Ｃは、フライングリードが２箇所で接合されているので、接合信頼性が高い。なお、バンプ１５Ａとバンプ１５Ｂは、同じ種類のバンプでもよいが、一方が半田バンプで他方がスタッドバンプであることが好ましい。異なる接合方法により２箇所で接合されている撮像装置は、より接合信頼性が高い。
＜第５実施形態＞
　次に第５実施形態の変形例の撮像装置１Ｄについて説明する。撮像装置１Ｄは、撮像装置１、１Ａ～１Ｃと類似し、同じ効果を有しているため、同じ機能の構成要素には同じ符号を付し説明は省略する。
　図９および図１０に示すように、撮像装置１Ｃの撮像素子１０Ｄの傾斜面電極１３および受光面電極１２に厚付けの半田層１５Ｄが形成されている。そして、配線板４０Ｄのフライングリード４１Ｄが、半田層１５Ｄにより、半田層１５Ｄを介して傾斜面電極１３および受光面電極１２と接合されている。半田層１５Ｄは、例えば、フレームめっき法により配設されたＳｎ合金からなる。
　また、撮像装置１Ｄでは、撮像素子１０Ｄの対向面１０ＳＢに、複数の第１の接合電極１９が配設されており、配線板４０Ｄの第１の主面４０ＳＡの先端部（先端面）に、複数の第２の接合電極４９が配設されている。第１の接合電極１９は、第２の接合電極４９と半田接合されている。
　すなわち、複数の第１の接合電極１９と複数の第２の接合電極４９とは、同じようにマトリックス配置されている。第１の接合電極１９にはバンプ（不図示）が配設されている。バンプは、例えば、フレームめっき法により配設されたＳｎ合金からなる。
　撮像装置１Ｄは、フライングリード４１Ｄと傾斜面電極１３との接合部が長い（広い）ために、接合信頼性が高い。また、撮像素子１０Ｄは発生した熱が、対向面１０ＳＢから第１の接合電極１９および第２の接合電極４９を介して配線板４０Ｄに伝熱されるため、高温になりにくい。このため、撮像装置１Ｄは、動作が安定している。
　本発明は上述した実施形態、または変形例等に限定されるものではなく、本発明の要旨を変えない範囲において、種々の変更、改変、組み合わせ等ができる。
１、１Ａ～１Ｄ…撮像装置
１０…撮像素子
１０ＳＡ…受光面
１０ＳＢ…対向面
１０ＳＳ…傾斜面
１１…受光部
１２…受光面電極
１３…傾斜面電極
１５…バンプ
１８…接着層
１９…第１の接合電極
２０…接着層
３０…カバーガラス
４０…配線板
４０Ｗ…配線
４１…フライングリード
４２…接合電極
４９…第２の接合電極
５０…信号ケーブル

Claims (7)

  1. 　受光部が形成されている受光面と、前記受光面と対向している対向面と、前記受光面に対して鋭角の第１の角度で傾斜している傾斜面と、を有し、前記受光面に前記受光部と電気的に接続された複数の受光面電極が形成されている、撮像素子と、
    　前記受光面を覆うように接着されている透明部材と、
    　前記撮像素子の前記複数の受光面電極のそれぞれと、それぞれが接続されている複数の配線を有する配線板と、を具備し、
    　前記透明部材および前記複数の受光面電極が前記傾斜面の端辺の外側まで延設されており、
    　前記受光面電極の裏面が前記対向面側に露出している撮像装置であって、
    　前記複数の配線のそれぞれの先端部が、前記第１の角度に対して補角の関係にある第２の角度に曲がった、前記受光面電極のそれぞれと電気的に接続されているフライングリードであり、
    　前記配線板の先端部が、前記撮像素子の前記対向面に固定されていることを特徴とする撮像装置。
  2. 　前記撮像素子が、前記複数の受光面電極から前記傾斜面まで、それぞれが延設されている複数の傾斜面電極を有し、
    　それぞれの前記フライングリードが、それぞれの前記傾斜面電極と接合されていることを特徴とする請求項１に記載の撮像装置。
  3. 　前記撮像素子が、前記複数の受光面電極から前記傾斜面まで、それぞれが延設されている複数の傾斜面電極を有し、
    　前記複数のフライングリードが、交互に配置されている第１のフライングリードと第２のフライングリードとからなり、
    　前記第１のフライングリードが、前記傾斜面電極と接合されており、
    　前記第２のフライングリードが、前記受光面電極と接合されていることを特徴とする請求項１に記載の撮像装置。
  4. 　それぞれの前記フライングリードが、それぞれの前記受光面電極と接合されていることを特徴とする請求項１に記載の撮像装置。
  5. 　前記撮像素子が、前記複数の受光面電極から前記傾斜面まで、それぞれが延設されている複数の傾斜面電極を有し、
    　フライングリードが、前記傾斜面電極および前記受光面電極と接合されていることを特徴とする請求項１に記載の撮像装置。
  6. 　前記複数の傾斜面電極にそれぞれ半田層が形成されており、
    　フライングリードが、前記半田層により、前記傾斜面電極および前記受光面電極と接合されていることを特徴とする請求項５に記載の撮像装置。
  7. 　前記撮像素子の前記対向面に、複数の第１の接合電極が配設されており、
    　前記配線板の前記先端面に、複数の第２の接合電極が配設されており、
    　複数の第１の接合電極のそれぞれが、複数の第２の接合電極のそれぞれと半田接合されていることを特徴とする請求項１から請求項６のいずれか１項に記載の撮像装置。
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US10334143B2 (en) 2019-06-25
JPWO2016166888A1 (ja) 2018-02-15
US20180041666A1 (en) 2018-02-08

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