WO2016165810A1 - Sol-gel-basierte druckbare und parasitär-diffusionshemmende dotiermedien zur lokalen dotierung von siliziumwafern - Google Patents
Sol-gel-basierte druckbare und parasitär-diffusionshemmende dotiermedien zur lokalen dotierung von siliziumwafern Download PDFInfo
- Publication number
- WO2016165810A1 WO2016165810A1 PCT/EP2016/000516 EP2016000516W WO2016165810A1 WO 2016165810 A1 WO2016165810 A1 WO 2016165810A1 EP 2016000516 W EP2016000516 W EP 2016000516W WO 2016165810 A1 WO2016165810 A1 WO 2016165810A1
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- WO
- WIPO (PCT)
- Prior art keywords
- aluminum
- doping
- printable
- silicon
- hybrid
- Prior art date
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- 229910052710 silicon Inorganic materials 0.000 title claims description 103
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1254—Sol or sol-gel processing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a novel printable paste in the form of a hybrid gel based on precursors of inorganic oxides, which can be used in a simplified process for the production of solar cells, wherein the hybrid gel according to the invention both as
- Antireflection coatings are conceivable. Possible coatings may include titanium dioxide, magnesium fluoride, tin dioxide and / or
- Silicon wafers printed hybrid gels are subjected to a drying step following their landfill. This drying may, but not necessarily, be done in a continuous furnace. During the drying of the gels, they are compacted as a result of the spewing out of solvents, as well as the thermal degradation of formulation auxiliaries and of the oxide precursors into homogeneous and tightly closing vitreous layers.
- hybrid gel deposited over the entire surface of the silicon wafer is dried and / or compacted and from the compacted hybrid doping gel with the aid of laser irradiation, the local doping of the underlying substrate material is initiated,
- a suitable acid preferably a carboxylic acid, and in this case particularly preferably with formic acid or acetic acid
- suitable complexing and chelating agents such as
- Benzyl benzoate, butyl benzoate, THF or comparable initially charged, with a suitable carboxylic anhydride, such as acetic anhydride,
- Formyl acetate or propionic anhydride or comparable and dissolved under reflux or reacted until a clear solution is present.
- suitable precursors of the silicon dioxide optionally pre-dissolved in the reaction solvent used, drop by drop.
- the reaction mixture is then heated or refluxed for up to 24 hours.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020177032777A KR20170137837A (ko) | 2015-04-15 | 2016-03-24 | 실리콘 웨이퍼의 국소 도핑을 위한 기생 확산을 억제하는 졸-겔-기재의 인쇄 가능한 도핑 매체 |
US15/565,955 US20180062022A1 (en) | 2015-04-15 | 2016-03-24 | Sol-gel-based printable doping media which inhibit parasitic diffusion for the local doping of silicon wafers |
EP16711776.1A EP3284110A1 (de) | 2015-04-15 | 2016-03-24 | Sol-gel-basierte druckbare und parasitär-diffusionshemmende dotiermedien zur lokalen dotierung von siliziumwafern |
CN201680021779.2A CN107532300A (zh) | 2015-04-15 | 2016-03-24 | 用于硅晶片的局部掺杂的抑制寄生扩散和基于溶胶‑凝胶的可印刷的掺杂介质 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP15001071.8 | 2015-04-15 | ||
EP15001071 | 2015-04-15 | ||
EP15180681.7 | 2015-08-12 | ||
EP15180681 | 2015-08-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016165810A1 true WO2016165810A1 (de) | 2016-10-20 |
Family
ID=55628981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2016/000516 WO2016165810A1 (de) | 2015-04-15 | 2016-03-24 | Sol-gel-basierte druckbare und parasitär-diffusionshemmende dotiermedien zur lokalen dotierung von siliziumwafern |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180062022A1 (de) |
EP (1) | EP3284110A1 (de) |
KR (1) | KR20170137837A (de) |
CN (1) | CN107532300A (de) |
TW (1) | TW201710185A (de) |
WO (1) | WO2016165810A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115224152B (zh) * | 2021-03-31 | 2024-04-16 | 浙江爱旭太阳能科技有限公司 | 太阳能电池及其制作方法 |
Citations (9)
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US6695903B1 (en) * | 1999-03-11 | 2004-02-24 | Merck Patent Gmbh | Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors |
WO2012119685A1 (de) | 2011-03-08 | 2012-09-13 | Merck Patent Gmbh | Formulierungen von druckbaren aluminiumoxidtinten |
WO2012119686A2 (de) | 2011-03-08 | 2012-09-13 | Merck Patent Gmbh | Aluminiumoxidpasten und verfahren zu deren verwendung |
WO2012119684A2 (de) | 2011-03-08 | 2012-09-13 | Merck Patent Gmbh | Aluminiumoxid basierte metallisierungsbarriere |
WO2013105600A1 (ja) * | 2012-01-10 | 2013-07-18 | 日立化成株式会社 | 太陽電池用基板の製造方法、および太陽電池素子の製造方法 |
WO2013125252A1 (ja) * | 2012-02-23 | 2013-08-29 | 日立化成株式会社 | 不純物拡散層形成組成物、不純物拡散層付き半導体基板の製造方法及び太陽電池素子の製造方法 |
US20140065764A1 (en) * | 2012-09-04 | 2014-03-06 | Innovalight Inc | Method for manufacturing a photovoltaic cell with a locally diffused rear side |
WO2014101990A1 (de) * | 2012-12-28 | 2014-07-03 | Merck Patent Gmbh | Flüssige dotiermedien zur lokalen dotierung von siliziumwafern |
WO2014101989A1 (de) * | 2012-12-28 | 2014-07-03 | Merck Patent Gmbh | Dotiermedien zur lokalen dotierung von siliziumwafern |
-
2016
- 2016-03-24 US US15/565,955 patent/US20180062022A1/en not_active Abandoned
- 2016-03-24 EP EP16711776.1A patent/EP3284110A1/de not_active Withdrawn
- 2016-03-24 CN CN201680021779.2A patent/CN107532300A/zh active Pending
- 2016-03-24 KR KR1020177032777A patent/KR20170137837A/ko unknown
- 2016-03-24 WO PCT/EP2016/000516 patent/WO2016165810A1/de active Application Filing
- 2016-04-14 TW TW105111694A patent/TW201710185A/zh unknown
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6695903B1 (en) * | 1999-03-11 | 2004-02-24 | Merck Patent Gmbh | Dopant pastes for the production of p, p+, and n, n+ regions in semiconductors |
WO2012119685A1 (de) | 2011-03-08 | 2012-09-13 | Merck Patent Gmbh | Formulierungen von druckbaren aluminiumoxidtinten |
WO2012119686A2 (de) | 2011-03-08 | 2012-09-13 | Merck Patent Gmbh | Aluminiumoxidpasten und verfahren zu deren verwendung |
WO2012119684A2 (de) | 2011-03-08 | 2012-09-13 | Merck Patent Gmbh | Aluminiumoxid basierte metallisierungsbarriere |
WO2013105600A1 (ja) * | 2012-01-10 | 2013-07-18 | 日立化成株式会社 | 太陽電池用基板の製造方法、および太陽電池素子の製造方法 |
WO2013125252A1 (ja) * | 2012-02-23 | 2013-08-29 | 日立化成株式会社 | 不純物拡散層形成組成物、不純物拡散層付き半導体基板の製造方法及び太陽電池素子の製造方法 |
US20140065764A1 (en) * | 2012-09-04 | 2014-03-06 | Innovalight Inc | Method for manufacturing a photovoltaic cell with a locally diffused rear side |
WO2014101990A1 (de) * | 2012-12-28 | 2014-07-03 | Merck Patent Gmbh | Flüssige dotiermedien zur lokalen dotierung von siliziumwafern |
WO2014101989A1 (de) * | 2012-12-28 | 2014-07-03 | Merck Patent Gmbh | Dotiermedien zur lokalen dotierung von siliziumwafern |
Also Published As
Publication number | Publication date |
---|---|
KR20170137837A (ko) | 2017-12-13 |
US20180062022A1 (en) | 2018-03-01 |
EP3284110A1 (de) | 2018-02-21 |
CN107532300A (zh) | 2018-01-02 |
TW201710185A (zh) | 2017-03-16 |
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