WO2016149543A1 - Compositions de supraconducteur améliorées - Google Patents

Compositions de supraconducteur améliorées Download PDF

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Publication number
WO2016149543A1
WO2016149543A1 PCT/US2016/022955 US2016022955W WO2016149543A1 WO 2016149543 A1 WO2016149543 A1 WO 2016149543A1 US 2016022955 W US2016022955 W US 2016022955W WO 2016149543 A1 WO2016149543 A1 WO 2016149543A1
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Prior art keywords
approximately
superconductor
tape
superconductor tape
composition
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PCT/US2016/022955
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English (en)
Inventor
Venkat Selvamanickam
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The University Of Houston System
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Priority to US15/559,298 priority Critical patent/US10832843B2/en
Publication of WO2016149543A1 publication Critical patent/WO2016149543A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F6/00—Superconducting magnets; Superconducting coils
    • H01F6/06—Coils, e.g. winding, insulating, terminating or casing arrangements therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/02—Electrophoretic coating characterised by the process with inorganic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
    • H01F1/14—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys
    • H01F1/147—Alloys characterised by their composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/048—Superconductive coils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0436—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD]
    • H10N60/0464—Processes for depositing or forming copper oxide superconductor layers by chemical vapour deposition [CVD] by metalloorganic chemical vapour deposition [MOCVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide

Definitions

  • This disclosure relates to superconducting tapes, and more specifically to superconducting tapes having high peel strengths.
  • Figs. 1A-1B illustrate a schematic and cross-sectional microstructure of a prior art high-temperature superconducting (HTS) tape made via the aforementioned process.
  • the tape typically includes several oxide films positioned on a metallic substrate and capped with silver and copper over-layers.
  • One significant drawback of this design is that the structure is prone to debonding between the individual layers and delamination within the superconductor layer.
  • the interface between the LaMnCb (LMO) top buffer layer and the REBa 2 Cu30x (REBCO) superconducting film has been found to be prone to debonding and the REBCO itself has been observed to be prone to delamination (i.e. cohesive failure) within the overall architecture of the HTS tape.
  • Inhomogeneity in the superconductor film microstructure provides crack propagation paths that may result in reduced transverse tensile strength.
  • evidence of weak transverse strength in tapes in coils fabricated with epoxy impregnation has been observed (Y.
  • Fig. 2 shows a photograph of the top and bottom surfaces of a multifilamentary HTS tape. As illustrated, delamination has occurred both within the superconductor film and at the interface of the superconductor film and the buffer layer.
  • FIGS. 1A-1B illustrate a schematic and cross-sectional microstructure of a thin film high-temperature superconducting tape, in accordance with an embodiment.
  • Figure 2 illustrates delamination in a multifilamentary thin film high- temperature superconducting tape, in accordance with an embodiment.
  • Figures 3A-3B illustrate peel strengths for superconducting tapes having various compositions, in accordance with an embodiment.
  • Figures 4A-4C illustrate optical microscopy images of HTS tapes following a peel test, in accordance with an embodiment.
  • FIGS 5A-5B illustrate a T peel test, schematic of a peel test and tape surface following a peel test, in accordance with an embodiment.
  • a superconducting tape architecture that can achieve high peel strengths.
  • a superconducting tape disclosed herein can achieve a peel strength greater than approximately 4.5 N/cm.
  • the high peel strength superconducting tape is fabricated via Metal Organic Chemical Vapor Deposition (MOCVD).
  • MOCVD Metal Organic Chemical Vapor Deposition
  • the superconducting tape can be fabricated with a REBCO composition.
  • the REBCO composition can be based on the elements Sm-Ba-Cu-O.
  • the high peel strength superconducting tape can be fabricated with a REBCO composition, including an additional dopant transition metal (M) (e.g., Zirconium (Zr), Tantalum (Ta), Tin (Sn), Hafnium (Hf) and Niobium (Nb)).
  • M dopant transition metal
  • the Cu concentration can range from approximately 2.3 to 2.6.
  • a high peel strength superconducting tape can be fabricated via MOCVD with a precursor composition Smi.2Ba2Cux07-z, where 0 ⁇ z ⁇ l .
  • the Cu concentration can range from approximately 2.3 to 2.6.
  • the superconducting tape can be fabricated via MOCVD with a precursor composition Smi.2Ba2Cux07-z:M y , where 0 ⁇ z ⁇ l .
  • the dopant transition metal (M) concentration can vary from 0.05 to 0.30 (e.g., 15% Zr).
  • the Cu concentration can range from approximately 2.3 to 2.6.
  • an HTS tape is fabricated via MOCVD with a REBCO composition based on the element Samarium (Sm).
  • the REBCO composition may be Sm-Ba-Cu-O.
  • the REBCO composition may include at least one dopant transition metal M that can form the composition BaMCb, such as Zirconium (Zr), Tantalum (Ta), Tin (Sn), Hafnium (Hf) and Niobium (Nb).
  • the REBCO composition may include varying levels of Copper (Cu) content.
  • REBCO compositions that include samarium, a dopant transition metal (e.g., Zr), and/or varying levels of Cu content can considerably strengthen the interfacial adhesion of the REBCO and buffer and the cohesive strength of the REBCO film.
  • a dopant transition metal e.g., Zr
  • the cations in the chemical precursors used to fabricate the REBCO film can have the composition Smi.2Ba2Cux07-z, where 0 ⁇ z ⁇ l .
  • the Cu concentration can range from approximately 2.3 to 2.6.
  • the REBCO film can include an addition of a dopant transition metal M that can form BaM0 3 (e.g., Zr, Ta, Sn, Hf, Nb).
  • the precursors used to make the REBCO film can have the composition Snn.
  • the Cu concentration can range from approximately 2.3 to 2.6.
  • the Zr concentration can vary from 0.05 to 0.30, such as 15% Zr.
  • REBCO films fabricated via MOCVD can exhibit peel strengths greater than 3 N/cm.
  • REBCO films made with precursors having the cation composition Smi.2Ba2Cux07- z :Zro. i5, where x ranges from approximately 2.3 to 2.6 and 0 ⁇ z ⁇ l can exhibit a peel strength greater than 3 N/cm.
  • Fig. 3A illustrates load-displacement curves for super conductor tapes having standard compositions (e.g., (Gd,Y)Ba-Cu-0 with 15% or 7.5%) Zr addition) versus tapes made with precursors of novel cation compositions described herein, i.e.
  • an HTS tape made with precursors of cation composition Smi.2Ba2Cu2.607-z:Zro.i5 where 0 ⁇ z ⁇ l can exhibit an average peel strength of between approximately 7 and approximately 8 N/cm.
  • HTS tapes made with standard composites exhibit peel strengths less than approximately 2 N/cm.
  • Fig. 4A illustrates an optical microscopy image of a standard tape, (Gd,Y)- Ba-Cu-0 with 15% Zr addition, following a peel test.
  • the delamination propagates through the buffer/REBCO interface (i.e. adhesive failure) and through the HTS film (i.e. cohesive failure).
  • the crack is initiated at the weakest point and it propagates from one layer as peeling progresses.
  • Two-thirds of the peeled surface exhibits cohesive delamination within the HTS film, and one-third of the peeled surface exhibits delamination at the buffer-HTS film interface.
  • the delamination shifts from one buffer to another as evident by the varying shades of grey color.
  • Fig. 4B illustrates an optical image microscopy of an HTS tape fabricated via MOCVD with precursors of cation composition Smi.2Ba2Cu2.407-z:Zro.i5, where 0 ⁇ z ⁇ l, following a peel test.
  • Fig. 4C illustrates an optical image microscopy of an HTS tape fabricated via MOCVD having the composition Smi.2Ba2Cu2.507-z:Zro.i5, where 0 ⁇ z ⁇ l, following a peel test.
  • any delamination occurs primarily at the HTS film-silver overlayer interface.
  • the above-described REBCO compositions are fabricated via Metal Organic Chemical Vapor Deposition (MOCVD), which is a well-known fabrication process used to produce thin films.
  • MOCVD Metal Organic Chemical Vapor Deposition
  • the cation compositions of the precursors were Smi.2Ba2Cu x 07- z :Zro.i5, where x was varied from 2.3 to 2.6 and 0 ⁇ z ⁇ l .
  • a single solution was prepared by dissolving all -thd precursors together in tetrahydrofuran.
  • the precursor solution was vaporized in a flash evaporator and the vapor was deposited on buffered metal substrates in a MOCVD reactor with a linear showerhead.
  • the superconductor film thickness was controlled by the substrate tape movement speed.
  • a silver overlayer of thickness of about 1.5 ⁇ was deposited by magnetron sputtering.
  • the tape was then oxygenated at 400 - 500°C for 0.5 hours.
  • a copper stabilizer having a thickness of about 20 ⁇ is electroplated all around the tape.
  • a 20 ⁇ copper stabilizer was deposited only on the silver overlayer above the superconductor film.
  • T Peel Test Many techniques have been used to evaluate the adhesive behavior of thin films, including the anvil test (G. Majkic, et al., "Investigation of
  • 5A - 5B illustrate a peel test and a schematic of the peel test.
  • the top layer of the delaminated tape was glued to a moving force meter, and the bottom layer was held stationary by a vice.
  • the sample was manually delaminated from the weakest layer.
  • the peeling angle ⁇ can vary depending on the force exerted on the peeled region and the remaining length of the sample.
  • the total length of the peeled region ranges from 35-70 mm.
  • a digital force gauge was used to measure the load required to peel the HST tapes at a constant loading displacement speed of 0.833 mm/s. Load displacement curves were generated based on the peel data.
  • Fig. 5 shows an HTS tape after conducting the peel test.
  • the microstructure of the surfaces of the tape after peeling can be examined to determine the mode of delamination.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Dispersion Chemistry (AREA)
  • Electrochemistry (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

Un ruban supraconducteur peut être fabriqué par dépôt chimique en phase vapeur aux organométalliques (MOVCD) pour obtenir des résistances à l'arrachement supérieures à environ 4,5 N/cm. Le ruban supraconducteur peut être fabriqué par MOVCD avec une composition REBCO qui comprend les éléments samarium (Sm) - baryum (Ba) - cuivre (Cu) - oxygène (O). Des niveaux variables de teneur en cuivre (Cu) permettent d'obtenir des résistances à l'arrachement comprises entre environ 4,5 N/cm et 8,0 N/cm.
PCT/US2016/022955 2015-03-17 2016-03-17 Compositions de supraconducteur améliorées WO2016149543A1 (fr)

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US15/559,298 US10832843B2 (en) 2015-03-17 2016-03-17 Superconductor compositions

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US201562134240P 2015-03-17 2015-03-17
US62/134,240 2015-03-17

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108342757A (zh) * 2018-02-05 2018-07-31 苏州新材料研究所有限公司 一种电镀铜制备高温超导带材保护层的方法
EP3584847A1 (fr) * 2018-06-18 2019-12-25 Bruker HTS GmbH Procédé de fabrication d'une bande revêtue de hts
CN110716256A (zh) * 2018-07-12 2020-01-21 采钰科技股份有限公司 光学元件及其制造方法
US11617649B2 (en) 2017-01-20 2023-04-04 Medtronic Vascular, Inc. Transcatheter delivery systems and delivery catheters for prosthetic mitral valve delivery, and methods for prosthetic mitral valve delivery using a retrograde approach

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US20050227064A1 (en) * 2004-04-01 2005-10-13 Hwail Jin Dicing die bonding film
US20110028328A1 (en) * 2009-07-28 2011-02-03 University Of Houston System Superconductive Article with Prefabricated Nanostructure for Improved Flux Pinning
US20120122697A1 (en) * 2010-11-15 2012-05-17 Kabushiki Kaisha Toshiba Superconducting coil

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US20040266628A1 (en) * 2003-06-27 2004-12-30 Superpower, Inc. Novel superconducting articles, and methods for forming and using same
US7774035B2 (en) * 2003-06-27 2010-08-10 Superpower, Inc. Superconducting articles having dual sided structures
US20050159298A1 (en) * 2004-01-16 2005-07-21 American Superconductor Corporation Oxide films with nanodot flux pinning centers
JP5517196B2 (ja) * 2009-11-20 2014-06-11 東洋鋼鈑株式会社 超電導化合物用基板及びその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050227064A1 (en) * 2004-04-01 2005-10-13 Hwail Jin Dicing die bonding film
US20110028328A1 (en) * 2009-07-28 2011-02-03 University Of Houston System Superconductive Article with Prefabricated Nanostructure for Improved Flux Pinning
US20120122697A1 (en) * 2010-11-15 2012-05-17 Kabushiki Kaisha Toshiba Superconducting coil

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11617649B2 (en) 2017-01-20 2023-04-04 Medtronic Vascular, Inc. Transcatheter delivery systems and delivery catheters for prosthetic mitral valve delivery, and methods for prosthetic mitral valve delivery using a retrograde approach
CN108342757A (zh) * 2018-02-05 2018-07-31 苏州新材料研究所有限公司 一种电镀铜制备高温超导带材保护层的方法
EP3584847A1 (fr) * 2018-06-18 2019-12-25 Bruker HTS GmbH Procédé de fabrication d'une bande revêtue de hts
CN110716256A (zh) * 2018-07-12 2020-01-21 采钰科技股份有限公司 光学元件及其制造方法
CN110716256B (zh) * 2018-07-12 2022-03-22 采钰科技股份有限公司 光学元件及其制造方法

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US20180061542A1 (en) 2018-03-01

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