WO2016147710A1 - Appareil de formation de film mince - Google Patents

Appareil de formation de film mince Download PDF

Info

Publication number
WO2016147710A1
WO2016147710A1 PCT/JP2016/052639 JP2016052639W WO2016147710A1 WO 2016147710 A1 WO2016147710 A1 WO 2016147710A1 JP 2016052639 W JP2016052639 W JP 2016052639W WO 2016147710 A1 WO2016147710 A1 WO 2016147710A1
Authority
WO
WIPO (PCT)
Prior art keywords
film forming
film formation
mask
thin film
formation target
Prior art date
Application number
PCT/JP2016/052639
Other languages
English (en)
Japanese (ja)
Inventor
充 上野
敬臣 倉田
新井　真
清田　淳也
一也 齋藤
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to KR1020177023624A priority Critical patent/KR20170105614A/ko
Priority to CN201680015597.4A priority patent/CN107429387B/zh
Priority to JP2017506125A priority patent/JP6500084B2/ja
Publication of WO2016147710A1 publication Critical patent/WO2016147710A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Definitions

  • the present invention relates to a technical field of a thin film forming apparatus, and more particularly to a thin film forming apparatus that efficiently forms a thin film.
  • the film formation target When forming a thin film of film formation material on a large film formation target such as a glass substrate, the film formation target is placed in a vacuum chamber and fine particles such as vapor of the film formation material are released from the film formation source.
  • a technique is widely used in which fine particles are adhered to the surface of a film formation target by moving a position facing the film formation target.
  • Reference numeral 110 in FIG. 6 is a thin film forming apparatus of the technology, in which two film forming chambers 111a and 111b and a plurality of vacuum chambers 113 are arranged around the transfer chamber 112, and each chamber 111a, 111b, 113 is connected to the transfer chamber 112.
  • a substrate holder 121 is disposed inside each of the two film forming chambers 111a and 111b, an imaging device 135 such as a camera is disposed above the substrate holder 121, and a film forming source 122 is disposed below. Is arranged.
  • the film forming source 122 is attached to the film forming source moving device 131, and when the film forming source moving device 131 operates, the film forming source 122 is reciprocated in the horizontal direction at a position below the substrate holder 121.
  • a substrate moving device 125 including a substrate transfer robot is disposed inside the transfer chamber 112.
  • Reference numeral 105 a in FIG. 6B denotes a film formation target that is carried into the film formation chamber 111 a by the substrate moving device 125 and placed on the substrate holder 121.
  • this film forming object 105a When this film forming object 105a is carried into the film forming chamber 111a, it is placed in an alignment moving device (not shown) inside the film forming chamber 111a before being placed on the substrate holder 121.
  • the imaging device 135 images the alignment mark of the film formation target 105 a and the alignment mark of the substrate holder 121, and the imaging result is output to the control device 136, and the film formation target 105 a and the substrate holder 121 are A position error is detected, and the film formation target 105a is moved by the control device 136 so as to reduce the position error, and is disposed on the substrate holder 121 in a state where the position error is reduced.
  • the substrate holder 121 is provided with a through hole, and the surface of the film-forming target 105a disposed on the substrate holder 121 is exposed at the bottom surface of the through hole.
  • a part of the surface of the film forming source 122 facing the film forming target 105 a is provided with a plurality of discharge holes 123, and the film forming source moving apparatus is configured to discharge fine particles of the film forming material from the discharge holes 123.
  • the film formation source 122 is moved by 131, fine particles reach the surface exposed on the bottom surface of the through hole of the film formation target object 105a, and adhere to grow a thin film.
  • FIG. 6B while a thin film is formed on the surface of the film formation target 105a inside one film formation chamber 111a, the film is placed on the substrate transfer device 125 inside the other film formation chamber 111b.
  • the film formation target 105b is carried in.
  • the other film is formed while the thin film is formed on the surface of the film forming object 105a inside the one film forming chamber 111a. Since the undeposited film formation target 105b can be carried into the chamber 111b and the film formation target 105b can be aligned, the film formation process on the film formation targets 105a and 105b is not interrupted. That's it.
  • the film forming source is formed inside the two film forming chambers 111a and 111b. 122 and the film forming source moving device 131 are disposed, and the cost is not reduced.
  • one film forming chamber 211 and a plurality of vacuum chambers 214 are connected around the transfer chamber 212, and inside the one film forming chamber 211, Two substrate holders 221a and 221b are arranged.
  • the film formation source moving device 231 is arranged across the lower position of one substrate holder 221a and the lower position of the other substrate holder 221b, and one film formation source 222 is moved by the film formation source moving device 231. When it is moved, it can move while facing any of the two substrate holders 221a and 221b.
  • the film formation target 205a is arranged on one substrate holder 221a, and fine particles of the film formation material are released from the discharge hole 223 at a position below the film formation target 205a. While the film forming source 222 moves to face the film forming object 205a and grows the thin film, the film forming object 205b that has not been formed on the substrate moving device 225 disposed in the transfer chamber 212 is grown. Can be carried into the film formation chamber 211 and aligned with the other substrate holder 221b.
  • the film forming source 222 can be integrated, but it is necessary to arrange the imaging device 235 and the alignment moving device on each of the substrate holders 221a and 221b. There is a need for a lower cost thin film forming apparatus.
  • JP 2012-174609 A Japanese Patent No. 4510609
  • the present invention was created in order to solve the disadvantages of the prior art, and an object thereof is to provide a low-cost thin film forming apparatus.
  • the present invention is provided with a film formation chamber, a plurality of substrate holders disposed in the film formation chamber, in which a mask and a film formation target are disposed, and are rotated in the film formation chamber. From the imaging device of the main imaging device, the main imaging device for imaging the rotation device, the mask placed on the substrate holder located at the alignment location, the film formation target facing the mask, the mask The first position error between the first and second film formation objects is determined, the film formation object is moved so as to reduce the first position error, and the mask is placed on the mask in the aligned state.
  • a control device that arranges a film formation target, a film formation source that is disposed inside the film formation chamber and discharges fine particles of the film formation material, and the film formation source is moved inside the film formation chamber.
  • a deposition source moving device that passes through a location facing the membrane location; And the aligned mask and the deposition target are moved from the alignment location to the deposition location by the rotation of the rotating device, and the deposition source releases the fine particles while
  • a thin film forming apparatus in which the fine particles pass through a place facing the film forming place, pass through the through hole of the substrate holder and the window portion of the mask, reach the film forming target, and form a thin film It is.
  • the present invention is provided with an auxiliary imaging device that images the mask and the film formation target located at the film formation location, and from the result of imaging by the auxiliary imaging device, the film formation target and the mask
  • This is a thin film forming apparatus in which a second positional error is required.
  • the present invention is a thin film forming apparatus including a holding device that fixes the mask and the film formation target disposed on the mask to the rotating device.
  • the second position error is compared with a second reference value and the second position error is larger than the second reference value, the thin film is formed on the film formation target. Instead, the thin film forming apparatus is returned to the alignment location together with the mask by the rotation of the rotating device.
  • the present invention is provided with a film forming chamber, a plurality of substrate holders disposed in the film forming chamber and on which a film forming target is disposed, a rotating device that rotates in the film forming chamber, and the rotation device positioned in an alignment place
  • a main imaging device that images a substrate holder, a film formation target facing the substrate holder, and a first position error between the substrate holder and the film formation target based on an imaging result of the main imaging device
  • the film forming object is moved so as to reduce the first position error, and the film forming object is placed on the substrate holder in the aligned state, and the film forming
  • a film forming source disposed inside the chamber for discharging fine particles of the film forming material, and a film forming source moving device configured to move the film forming source within the film forming chamber and pass a place facing the film forming place
  • the substrate holder and the object to be deposited are moved from the alignment location to the deposition location, and the deposition source passes through a location
  • the present invention is provided with an auxiliary imaging device that images the substrate holder and the film formation target located at the film formation location, and from the result of imaging by the auxiliary imaging device, the film formation target and the mask It is a thin film forming apparatus for which a second position error is required.
  • the present invention is a thin film forming apparatus having a holding device for fixing the substrate holder and the film formation target disposed on the substrate holder to the rotating device.
  • the second position error is compared with a second reference value and the second position error is larger than the second reference value, the thin film is formed on the film formation target. Instead, the thin film forming apparatus is returned to the alignment place by the rotation of the rotating device.
  • the present invention is the thin film forming apparatus in which the two substrate holders are provided, and the two substrate holders are provided on opposite sides of the rotation center of the rotation device.
  • the present invention it is possible to perform alignment of another film formation object while forming a thin film on the surface of the film formation object without providing a plurality of film forming sources and a plurality of devices required for alignment. Position error generation during rotational movement is prevented by the holding device, and if it occurs, it can be detected by the auxiliary imaging device before film formation, and alignment can be performed again. Defects due to errors are eliminated.
  • FIG. 1 Internal plan view of the thin film forming apparatus of the present invention
  • a1 AA cross-sectional view taken along line AA in FIG. 1
  • a2 A diagram for explaining a state in which a film formation target is disposed, using a cross-sectional view taken along AA line
  • b1 FIG. Sectional view taken along the line BB of FIG.
  • a thin film forming apparatus 10 of the present invention has a transfer chamber 12.
  • a film forming chamber 11 for forming a thin film Around the transfer chamber 12, a film forming chamber 11 for forming a thin film, a vacuum chamber 14 for performing pre-processing and post-processing for forming a thin film, and a carry-in / out chamber 13 for carrying in / out a film-forming target are disposed
  • Each chamber 11, 13, 14 is connected to the transfer chamber 12.
  • Each of the chambers 11 to 14 is provided with an evacuation device and configured to be evacuated.
  • Reference numeral 18 in FIG. 1 is an evacuation apparatus connected to the film forming chamber 11, and reference numeral 19 is an evacuation apparatus connected to the transfer chamber 12.
  • the chambers 11 to 14 are evacuated to form a vacuum atmosphere.
  • Each of the chambers 11 to 14 is partitioned by a vacuum valve that can be opened and closed, but the description of opening and closing is omitted.
  • a substrate carry-in / out device 25 is provided inside the transfer chamber 12.
  • the substrate carry-in / out device 25 has an arm 38 and a hand 39, and is configured such that when the arm 38 expands and contracts by the rotation of the rotation shaft 37, the hand 39 moves in a horizontal plane.
  • a film formation target on which a thin film is formed in the film formation chamber 11 is placed on the hand 39 and moved between the chambers 11, 13, 14 and the transfer chamber 12.
  • the arranged film formation target is placed on the hand 39 and taken out from the carry-in / out chamber 13, and then carried into the film-formation chamber 11 and other vacuum chambers 14 through the transfer chamber 12.
  • a disk-shaped rotating device 21 is provided horizontally inside the film forming chamber 11.
  • FIG. 2A1 is a cross-sectional view taken along line AA in FIG. 1, and FIG. 2B1 is a cross-sectional view taken along line BB in FIG.
  • Reference numeral 32 in FIG. 2A1 denotes a rotating shaft having one end vertically attached to the rotating device 21.
  • a driving device 48 such as a motor is provided outside the film forming chamber 11.
  • the other end of the rotating shaft 32 is connected to the driving device 48, and when the driving device 48 operates, the rotating shaft 32 is rotated by the rotating shaft. It is made to rotate around 32 central axes.
  • the rotation device 21 rotates in the same plane around the rotation center 33 that is the center of the portion to which the rotation shaft 32 is attached. Here it rotates in a horizontal plane.
  • a film forming source moving device 31 is arranged on one surface side (here, the bottom surface side of the film forming chamber 11) of both surfaces of the rotating device 21.
  • the rotating device 21 is arranged so as to be divided into a part located right above the film forming source moving device 31 and a part not located right above the film forming source moving device 31.
  • the portion located immediately above the film forming source moving device 31 moves to a place not located directly above, and the portion not located directly above the film forming source moving device 31 is It is designed to move to a location located above.
  • An auxiliary imaging device 45 is disposed above a portion located on the other surface side (here, the ceiling side) of the rotating device 21 directly above the film forming source moving device 31.
  • a main imaging device 35 and a substrate moving device 27 are disposed above a portion not located directly above.
  • the main imaging device 35 and the auxiliary imaging device 45 are respectively connected to the main control device 36 and the auxiliary control device 46 that are arranged outside the film forming chamber 11, and show the imaging results captured by the main imaging device 35.
  • the signal and the signal indicating the imaging result captured by the auxiliary imaging device 45 are output to the main control device 36 and the auxiliary control device 46, respectively.
  • a plurality of through holes 49a and 49b are formed in the rotating device 21, and a plurality of substrate holders 34a and 34b are formed by the through holes 49a and 49b and the edge portions of the through holes 49a and 49b. Yes.
  • substrate holders 34a and 34b are formed one by one at positions opposite to each other around the rotation center 33, and masks 4a and 4b are respectively arranged on the substrate holders 34a and 34b.
  • the masks 4a and 4b are thin metal plates and are placed on the edges of the through holes 49a and 49b of the substrate holders 34a and 34b.
  • the masks 4a and 4b are formed with windows at predetermined positions, and through holes 49a and 49b of the substrate holders 34a and 34b are located on the bottom surfaces.
  • the alignment location 16 and the center of rotation 33 is opposite to the alignment location 16 as the deposition location 15, the deposition source moving device 31 and the auxiliary imaging device 45 face the deposition location 15.
  • the main imaging device 35 and the substrate moving device 27 are arranged in a place where they can face the alignment place 16.
  • a film forming object carried into the film forming chamber 11 from the transfer chamber 12 is placed on the substrate moving device 27.
  • Reference numeral 5 a in FIG. 3A indicates a film formation target placed on the substrate moving device 27.
  • the film formation target 5a and the masks 4a and 4b are respectively provided with alignment marks.
  • the main imaging device 35 uses the main imaging device 35 to align the film formation target 5a on the substrate moving device 27 and the mask 4a.
  • the signal indicating the imaging result is output to the main control device 36, the main control device 36 determines the position on the substrate moving device 27 from the relative positional relationship of the alignment marks in the imaging result.
  • a first position error which is an error on the alignment location 16 between the relative position between the film object 5a and the mask 4a, and the ideal relative position is obtained.
  • the substrate moving device 27 is controlled by the main control device 36.
  • the main control device 36 stores the first and second reference values.
  • the main control device 36 compares the first position error with the first reference value, and the first position error is the first reference value. When the value is larger than one reference value, the position error is reduced by relatively moving the film formation target 5a and the mask 4a, and the first position error is obtained again by imaging by the main imaging device 35. .
  • the main controller 36 obtains the first position error by imaging the main imaging device 35, compares the first position error with the first reference value, and the first position error is When the value is larger than the first reference value, an alignment process is performed in which the position error is reduced by relatively moving the film formation target 5a and the mask 4a, and the first position error is performed.
  • the film formation target 5a is equal to or lower than the first reference value, it is assumed that the film formation target 5a and the mask 4a are aligned. It arrange
  • the substrate holders 34a and 34b are provided with holding devices 47a and 47b, and are arranged on the masks 4a and 4b while being aligned with the masks 4a and 4b on the alignment place 16 and the masks 4a and 4b.
  • the film-forming objects 5a and 5b thus formed are clamped by the holding devices 47a and 47b and fixed to the substrate holders 34a and 34b by the holding devices 47a and 47b.
  • the state is shown in FIGS. 2 (a2), 2 (b2), and 3 (b).
  • the film formation objects 5 a and 5 b fixed to the substrate holders 34 a and 34 b are fixed to the rotating device 21.
  • the holding devices 47a and 47b press the film forming objects 5a and 5b arranged in alignment on the masks 4a and 4b against the rotating device 21 together with the masks 4a and 4b.
  • the holding devices 47a and 47b are attached by fixing the masks 4a and 4b and the film-forming objects 5a and 5b to the rotating device 21 with an apparatus for pressing and fixing with a spring or an adhesive sheet. It may be a device that performs.
  • the holding devices 47a and 47b are formed of the magnetic material attracted by the magnets of the rotating device 21, and the magnets of the holding devices 47a and 47b are placed on the masks 4a and 4b.
  • the mask 4a, 4b and the film formation objects 5a, 5b arranged on the masks 4a, 4b are arranged on the rotating device 21 by generating an attractive force between the magnet and the rotating device 21. You may make it fix to.
  • the substrate holder 34a located at the alignment place 16 moves to the film forming place 15, and the substrate holder located at the film forming place 15 is moved. 34b moves to alignment location 16.
  • the mask 4a and the film formation target 5a arranged on the mask 4a rotate together, the mask 4a and the mask 4a are arranged on the mask 4a even if the rotation speed of the rotating device 21 is increased. No positional deviation occurs between the film formation target 5a and the aligned state is maintained.
  • the film formation source moving device 31 is disposed across the place facing the film formation location 15 and the locations on both sides of the film formation location 15, and the film formation source 22 is moved by the film formation source transfer device 31. It can pass through a place facing the film forming place 15.
  • a discharge hole 23 is provided at a position on the surface of the film formation source 22 that can face the film formation place 15, and fine particles of the film formation material are discharged from the discharge hole 23.
  • the fine particles of the film forming material may be generated inside the film forming source 22, or the fine particles generated by another apparatus are moved to the film forming source 22 and released from the discharge hole 23 of the film forming source 22. You may be made to do.
  • One surface of the mask 4a located on the film forming place 15 is exposed under the bottom surface of the through hole 49a of the substrate holder 34a.
  • the rotation device 21 rotates 180 degrees and then stops, the alignment mark of the mask 4a that is stationary at the film formation location 15 and the alignment mark of the film formation target 5a on the mask 4a are generated by the auxiliary imaging device 45.
  • the image is captured and the imaging result is output to the auxiliary controller 46.
  • the auxiliary controller 46 obtains a second positional error, which is a positional error on the film deposition location 15, from the relative positional relationship between the mask 4 a located at the film deposition location 15 and the film formation target 5 a.
  • the second position error is compared with the second reference value, and the comparison result is output to the main controller 36.
  • the main controller 36 causes the film forming source 22 to start moving by the film forming source moving device 31 while discharging the fine particles.
  • the second position error is the second reference value. If the value is larger than the value, the relative position between the rotated mask 4a and the film formation target 5a changes due to the high-speed rotation and sudden stop of the rotating device 21, and the position error becomes large.
  • the main controller 36 rotates the rotating device 21 without starting the movement of the film forming source 22, and the mask 4 a positioned at the film forming location 15.
  • the film formation target 5 a is returned to the alignment place 16.
  • the holding by the holding device 47a is released, and the film formation target 5a is moved to the mask 4a and the rotation device 21, and then the main control unit 36 operates the substrate moving device 27 to form the film formation target.
  • 5a is separated from the mask 4a, the above-described alignment process is performed, and when the first position error is equal to or less than the first reference value, the film formation target 5a and the mask 4a are aligned.
  • the film formation target 5 a is lowered and placed on the mask 4 a, and the rotating device 21 is rotated to move from the alignment place 16 to the film formation place 15.
  • the film-forming target 5a and the mask 4a located in the film-forming place 15 are imaged by the auxiliary imaging device 46, the second position error is obtained, compared with the second reference value, and from the second reference value Is larger, the film formation target 5a and the mask 4a are returned to the alignment place 16 without performing the film formation process, and when the value is equal to or smaller than the second reference value, the film formation process is started.
  • the positional error between the mask 4a rotated and moved from the alignment location 16 to the deposition location 15 and the deposition target 5a is the second. Is detected as a position error and compared with a second reference value.
  • FIG. 4E shows a state before the film formation source 22 that has started moving while discharging fine particles faces the film formation target 5a.
  • the film forming source 22 reaches the place facing the film forming place 15 while discharging the fine particles of the film forming material from the discharge hole 23, the discharged fine particles reach the film forming place 15.
  • the surface of the mask 4a is exposed in the through hole 49a of the substrate holder 34a, and the fine particles reaching the film formation place 15 are passed through the through hole 49a of the substrate holder 34a and the window portion of the mask 4a. Then, the fine particles reach the surface of the film formation target 5a exposed at the window portion and adhere to grow a thin film of the film formation material.
  • the film formation target 5a is aligned with the mask 4a, and a thin film is formed with a small positional error with respect to the mask 4a. Therefore, the film formation source 22 faces the film formation place 15. However, the particles pass through the place facing the film formation place 15, the fine particles reach the exposed part of the mask 4a uniformly, and the thin film is exactly at the position where the thin film on the film formation target 5a is to be formed. It is formed.
  • the substrate carry-in / out device 25 carries the film formation object 5b, which has not been formed, into the film formation chamber 11, and the substrate moving device.
  • the alignment mark of the film formation target 5b that has not been formed and the alignment place 16 are formed at the alignment place 16.
  • the alignment mark of the mask 4b located at the center is imaged by the main imaging device 35, the first position error is detected by the main control device 36, and the alignment process is performed. The position error between the mask 4b at the alignment place 16 and the film formation target 5b is reduced before passing the place facing the film.
  • the film formation target 5b is placed on the mask 4b positioned at the alignment place 16, fixed to the rotating device 21 by the holding device 47b, and aligned.
  • the film object 5b and the mask 4b are fixed to the rotating device 21.
  • FIG. 4 (f) shows a state in which the film formation target 5 b is arranged on the mask 4 b located at the alignment place 16 and fixed by the holding device 47 b at the alignment place 16. The state where the source 22 has passed through the place facing the film forming place 15 is shown.
  • the film formation source 22 does not face the alignment place 16, and the fine particles emitted from the film formation source 22 do not reach the substrate holder 34 b located at the alignment place 16. Therefore, the thin film does not grow on the film forming target 5b arranged on the substrate moving device 27 or the alignment place 16.
  • the film formation source 22 passes through the place facing the film formation place 15, a thin film having a predetermined thickness is formed on the film formation target 5a located on the film formation place 15.
  • the rotating device 21 is rotated, and as shown in FIG. 5 (h), the mask 4b is aligned with the mask 4b.
  • the film forming object 5b is fixed and rotated to the film forming place 15, the film forming object 5a on which the thin film is formed is moved to the alignment place 16 together with the mask 5a, the holding device 47a is released, and the substrate is moved.
  • the film formation target 5a on which the thin film is formed by the apparatus 27 is separated from the mask 4a, the film formation target 5a is moved to the transfer chamber 12 by the substrate carry-in / out device 25, and then from the inside of the transfer chamber 12. Take it out.
  • FIG. 5 (i) shows the state after unloading.
  • the film formation target 5 a that has been carried out is carried into another vacuum chamber 14.
  • the mask 4a separated from the film formation target 5a is not carried out and remains on the substrate holder 34a.
  • the film formation source 22 is a place other than the place facing the film formation place 15.
  • the film forming source 22 starts moving while releasing the fine particles after the film forming objects 5a and 5b are stationary on the film forming place 15, the film forming objects on the film forming place 15 are placed.
  • a thin film is formed in the portion where the windows of the masks 4a and 4b of 5a and 5b are located.
  • the film formation target 5b (or 5a) that has not been formed is placed on the substrate moving device 27 at the alignment place 16.
  • the alignment with respect to the mask 4b (or 4a) can be performed.
  • the rotating device 21 rotates, the fine particles emitted from the film forming source 22 do not reach the surface of the rotating film forming objects 5a and 5b, and the fine particles are deposited on the rotating device 21.
  • An adhesion preventing plate for shielding fine particles can be provided so that the fine particles do not reach the portion other than the portion located at 15.
  • the alignment between the masks 4a and 4b on the alignment place 16 and the film formation targets 5a and 5b is performed, but the masks 4a and 4b are not arranged on the substrate holders 34a and 34b.
  • the film forming objects 5a and 5b can be placed on the substrate holders 34a and 34b to perform the film forming process.
  • alignment marks are formed on the substrate holders 34a and 34b.
  • the alignment mark of the substrate holders 34a and 34b is used, and the first positional error between the substrate holders 34a and 34b and the film formation targets 5a and 5b facing the substrate holders 34a and 34b is determined.
  • An alignment process between the film forming objects 5a and 5b and the substrate holders 34a and 34b is performed by the main imaging device 35 and the main control device 36.
  • the film formation objects 5a and 5b are placed on the substrate holders 34a and 34b, and the film formation objects 5a and 5b are placed on the substrate by the holding devices 47a and 47b.
  • the holders 34 a and 34 b are fixed, the rotating device 21 is rotated to rotate from the alignment place 16 to the film forming place 15, stopped at the film forming place 15, and stopped by the auxiliary imaging device 45.
  • the alignment mark and the alignment marks of the substrate holders 34a and 34b are imaged, the second position error is obtained, compared with the second reference value, and if the second position error is less than or equal to the second reference value, film formation is performed.
  • the film formation objects 5a and 5b are returned from the film formation place 15 to the alignment place 16 and the alignment process can be performed again.
  • the first position error is reduced by moving the deposition objects 5a and 5b placed on the substrate moving device 27 with respect to the masks 4a and 4b or the rotating device 21 located at the alignment place 16.
  • the substrate carry-in / out device 25 is moved and the mask 4 a, 4 b or the rotation device 21 located at the alignment place 16 is moved.
  • the film formation objects 5a and 5b may be arranged on the masks 4a and 4b on the alignment place 16 or on the substrate holders 34a and 34b.
  • the main imaging device 35 is disposed at the alignment location 16, and the film formation targets 5 a and 5 b and the mask 4 a,
  • the alignment mark with respect to 4b is imaged, and the alignment operation is performed by the main controller 36 based on this result, and the film forming objects 5a and 5b and the masks 4a and 4b or the rotating device rotated and moved to the film forming place 15 21 is confirmed by the auxiliary imaging device 45, and when the second position error is larger than the second reference value, alignment can be performed again.
  • the film formation process is started, and the film formation objects 5a and 5b that have been aligned next are moved to the film formation place 15.
  • the rotational speed can be reduced, and the change in the relative position between the deposition objects 5a and 5b and the masks 4a and 4b that have been rotated from the alignment place 16 to the deposition place 15 can be reduced.
  • the auxiliary control device 46 is provided separately from the main control device 36, but the operation of the main control device 36 and the operation of the auxiliary control device 46 may be performed by a single control device.
  • the main control device 36 and the auxiliary control device 46 may be regarded as a single control device.
  • the film forming material is an organic compound
  • the film forming source 22 may emit inorganic compound particles.
  • the first and second position errors are positive numbers.
  • the alignment is performed. Alignment may be performed when the position error is smaller than the first reference value.
  • the film forming process is started when the second position error is less than or equal to the second reference value.
  • the film forming process is started when the second position error is less than the second reference value. May be.
  • the first reference value and the second reference value are set to the same number, but if a slight position error caused by rotation is allowed, the second reference value is made larger than the first reference value. May be.
  • the invention also includes an invention that does not have an auxiliary imaging device.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un appareil de formation de film mince qui a une grande productivité à faible coût. Un dispositif rotatif (21), comprenant une table tournante, est disposé dans une chambre de formation de film (11). Après l'alignement d'un objet (5a, 5b) sur lequel un film doit être formé au niveau d'une position d'alignement (16), l'objet (5a, 5b) qui est aligné par rapport à un masque (4a, 4b) est placé sur un support de substrat (34a, 34b) disposé sur le dispositif rotatif (21). Le dispositif rotatif (21) est tourné de façon à transférer l'objet (5a, 5b) vers une position de formation de film (15). Par la suite, une source de formation de film (22) émettant des particules fines d'un matériau de formation de film est déplacée de façon à former un film mince sur l'objet (5a, 5b) situé au niveau de la position de formation de film (15). À ce moment, un autre objet (5a, 5b), sur lequel un film n'a pas encore été formé, peut être disposé au niveau de la position d'alignement (16), et la position de celui-ci peut être ajustée. Ainsi, l'appareil de formation de film mince (10) nécessite uniquement une source de formation de film (22) et un appareil nécessaire pour l'alignement.
PCT/JP2016/052639 2015-03-13 2016-01-29 Appareil de formation de film mince WO2016147710A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020177023624A KR20170105614A (ko) 2015-03-13 2016-01-29 박막 형성 장치
CN201680015597.4A CN107429387B (zh) 2015-03-13 2016-01-29 薄膜形成装置
JP2017506125A JP6500084B2 (ja) 2015-03-13 2016-01-29 薄膜形成装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-051304 2015-03-13
JP2015051304A JP2017171946A (ja) 2015-03-13 2015-03-13 薄膜形成装置

Publications (1)

Publication Number Publication Date
WO2016147710A1 true WO2016147710A1 (fr) 2016-09-22

Family

ID=56919675

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/052639 WO2016147710A1 (fr) 2015-03-13 2016-01-29 Appareil de formation de film mince

Country Status (5)

Country Link
JP (2) JP2017171946A (fr)
KR (1) KR20170105614A (fr)
CN (1) CN107429387B (fr)
TW (1) TWI681065B (fr)
WO (1) WO2016147710A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110004406A (zh) * 2017-12-21 2019-07-12 株式会社爱发科 蒸镀装置
CN111850463A (zh) * 2019-04-24 2020-10-30 佳能株式会社 基板处理设备和基板处理方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006307247A (ja) * 2005-04-26 2006-11-09 Ulvac Japan Ltd 成膜装置
WO2006134818A1 (fr) * 2005-06-15 2006-12-21 Ulvac, Inc. Dispositif de formation de film, appareil de fabrication de film mince et procédé de formation de film
JP2010209459A (ja) * 2009-02-13 2010-09-24 Hitachi High-Technologies Corp 有機ｅｌデバイス製造装置及び成膜装置並びに有機ｅｌデバイス製造方法及び成膜方法
JP2013151760A (ja) * 2013-04-25 2013-08-08 Hitachi High-Technologies Corp シャドウマスク交換方法
JP2013171811A (ja) * 2012-02-23 2013-09-02 Hitachi High-Technologies Corp 成膜装置
JP2014070241A (ja) * 2012-09-28 2014-04-21 Hitachi High-Technologies Corp 蒸着装置および蒸着方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW523943B (en) * 2001-12-26 2003-03-11 Ritdisplay Corp Deposition apparatus of organic light emitting device
US20060086321A1 (en) * 2004-10-22 2006-04-27 Advantech Global, Ltd Substrate-to-mask alignment and securing system with temperature control for use in an automated shadow mask vacuum deposition process

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006307247A (ja) * 2005-04-26 2006-11-09 Ulvac Japan Ltd 成膜装置
WO2006134818A1 (fr) * 2005-06-15 2006-12-21 Ulvac, Inc. Dispositif de formation de film, appareil de fabrication de film mince et procédé de formation de film
JP2010209459A (ja) * 2009-02-13 2010-09-24 Hitachi High-Technologies Corp 有機ｅｌデバイス製造装置及び成膜装置並びに有機ｅｌデバイス製造方法及び成膜方法
JP2013171811A (ja) * 2012-02-23 2013-09-02 Hitachi High-Technologies Corp 成膜装置
JP2014070241A (ja) * 2012-09-28 2014-04-21 Hitachi High-Technologies Corp 蒸着装置および蒸着方法
JP2013151760A (ja) * 2013-04-25 2013-08-08 Hitachi High-Technologies Corp シャドウマスク交換方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110004406A (zh) * 2017-12-21 2019-07-12 株式会社爱发科 蒸镀装置
CN110004406B (zh) * 2017-12-21 2021-06-25 株式会社爱发科 蒸镀装置
CN111850463A (zh) * 2019-04-24 2020-10-30 佳能株式会社 基板处理设备和基板处理方法
JP2020180327A (ja) * 2019-04-24 2020-11-05 キヤノン株式会社 基板処理装置および基板処理方法
JP7292948B2 (ja) 2019-04-24 2023-06-19 キヤノン株式会社 基板処理装置および基板処理方法
CN111850463B (zh) * 2019-04-24 2023-08-22 佳能株式会社 基板处理设备和基板处理方法

Also Published As

Publication number Publication date
CN107429387A (zh) 2017-12-01
JP2017171946A (ja) 2017-09-28
CN107429387B (zh) 2019-09-03
JPWO2016147710A1 (ja) 2017-11-24
KR20170105614A (ko) 2017-09-19
JP6500084B2 (ja) 2019-04-10
TW201641722A (zh) 2016-12-01
TWI681065B (zh) 2020-01-01

Similar Documents

Publication Publication Date Title
TWI732781B (zh) 真空處理設備以及用於真空處理基板的方法
JP6500084B2 (ja) 薄膜形成装置
WO2019049472A1 (fr) Dispositif de pulvérisation cathodique
TWI776802B (zh) 磁性膜成膜裝置及磁性膜成膜方法
KR20160098347A (ko) 인라인식 성막장치의 성막 준비방법, 인라인식 성막장치 및 캐리어
TWI712700B (zh) 濺鍍裝置
JPH0310710B2 (fr)
JP6310704B2 (ja) 成膜装置および成膜方法
JP2008223110A (ja) 薄膜処理装置
CN110408904A (zh) 一种溅射成膜装置
WO2017217555A1 (fr) Dispositif de formation de film
JP5002532B2 (ja) スパッタリング方法及びスパッタリング装置
TWI673375B (zh) 成膜裝置、遮罩框架、對準方法
CN210420144U (zh) 一种溅射成膜装置
JP2007100123A (ja) 真空蒸着装置
JP5787917B2 (ja) 成膜方法及び成膜装置
JP6997877B2 (ja) スパッタリング装置及び成膜方法
TWM590156U (zh) 用於施加薄膜塗層的真空裝置
JP2024011978A (ja) 成膜装置及び成膜装置の制御方法
JP2005171369A (ja) 基板保持機構
JP2002256432A (ja) 多層膜成膜装置
CN117594516A (zh) 基板处理装置和夹持机构
WO2006134908A1 (fr) Système et procédé d’évaporation organique
JP2005179701A (ja) 真空蒸着装置
JPH0394058A (ja) イオンビームスパッタ装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16764541

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2017506125

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20177023624

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16764541

Country of ref document: EP

Kind code of ref document: A1