WO2016145711A1 - 发光装置及背光模组 - Google Patents

发光装置及背光模组 Download PDF

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WO2016145711A1
WO2016145711A1 PCT/CN2015/077415 CN2015077415W WO2016145711A1 WO 2016145711 A1 WO2016145711 A1 WO 2016145711A1 CN 2015077415 W CN2015077415 W CN 2015077415W WO 2016145711 A1 WO2016145711 A1 WO 2016145711A1
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layer
substrate
type semiconductor
emitting device
light emitting
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PCT/CN2015/077415
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English (en)
French (fr)
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周革革
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深圳市华星光电技术有限公司
武汉华星光电技术有限公司
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Publication of WO2016145711A1 publication Critical patent/WO2016145711A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Definitions

  • the present invention relates to a light-emitting device using an LED chip, and a backlight module including the same.
  • LED light source is called the fourth generation light source, which has the advantages of energy saving, safety, reliability, long life, low power consumption, high brightness, waterproof, miniature, shockproof, easy dimming, concentrated beam, easy maintenance, etc.
  • the backlight module of the LED light source is widely used in the liquid crystal display. With the development of the liquid crystal display, the LED light source is constantly required to have higher brightness.
  • the light emitting device 100 comprising: a substrate 106 having a first pole 106a and a second pole 106b; a reflecting unit 103 disposed on the substrate 106; and a reflecting unit
  • the fluorescent unit 104 on the 103 is provided with a terminal 104a and a terminal 104b in the fluorescent unit 104, and an LED chip 105 that can be engaged between the fluorescent unit 104 and the reflecting unit 103.
  • one end of the terminals 104a and 104b are connected to the LED chip 105, and the other end is connected to the first pole 106a and the second pole 106b via the wire 102, respectively.
  • the terminals 104a and 104b and the wire 102 are both located above the LED chip 105, the terminals 104a and 104b and the wire 102 can block the light of the LED chip 105 when the LED chip emits light, thereby reducing the brightness and uniformity of the light emitting device 100. .
  • an object of the present invention is to provide a light-emitting device which is structured to avoid terminals The wire and the wire block the light of the LED chip, whereby the brightness and uniformity of the light-emitting device 100 can be improved.
  • a light emitting device comprising: a substrate having first and second poles; a reflective layer disposed on an upper surface of the substrate; and an upper surface disposed on the reflective layer a phosphor layer for controlling the color of the light; and an LED chip disposed between the reflective layer and the phosphor layer.
  • the LED chip is respectively connected to the first and second poles through two wires penetrating the reflective layer.
  • each of the wires is perpendicular to a lower surface of the LED chip.
  • the LED chip includes: a substrate embedded in an upper surface of the reflective layer; an N-polar conductive layer and a P-polar conductive layer disposed on an upper surface of the substrate, wherein The N-pole conductive layer and the P-pole conductive layer are respectively connected to the two wires passing through the substrate; the epitaxial layer and the N-type semiconductor layer sequentially disposed on the N-polar conductive layer; and sequentially disposed on the P a transparent conductive layer and a P-type semiconductor layer on the pole conductive layer; an insulating layer disposed between the N-pole conductive layer and the P-pole conductive layer; and a contact layer over the insulating layer for contacting the N-type semiconductor A light-emitting layer of a layer and a P-type semiconductor layer.
  • the orthographic projections of the reflective layer and the phosphor layer on the upper surface of the substrate are all entirely within the upper surface of the substrate.
  • an upper surface of the light emitting layer, an upper surface of the N-type semiconductor layer, and an upper surface of the P-type semiconductor layer are in the same plane, and a lower surface of the light emitting layer is not lower than The lower surface of the N-type semiconductor layer is not lower than the lower surface of the P-type semiconductor layer.
  • a substrate is embedded within the reflective layer and an upper surface of the substrate is flush with an upper surface of the reflective layer.
  • a heat dissipating mechanism is provided on a lower surface of the substrate.
  • the heat dissipating mechanism includes a heat sink that conforms to a lower surface of the substrate, and a plurality of fins that are fixedly spaced apart on a lower surface of the heat sink.
  • a backlight module including the light emitting device according to the first aspect of the present invention is provided.
  • the light-emitting device according to the present invention has the wires disposed under the LED chips, and the terminals are not disposed above the LED chips, thereby effectively preventing the wires and the terminals from blocking the light of the LED chips, and improving the brightness and uniformity of the light-emitting device of the present invention. Sex.
  • the light-emitting device according to the present invention has a simple structure, low production cost, safe and reliable use, and is convenient for implementation and popularization.
  • the backlight module according to the present invention uses the light-emitting device according to the first aspect of the present invention, so that the backlight module can be both energy-saving and has high brightness, thereby providing sufficient liquid crystal panel Light source.
  • Figure 1 shows a typical illumination device of the prior art
  • FIG. 2 shows a lighting device in accordance with the present invention
  • Fig. 3 shows an LED chip of a light-emitting device according to the present invention and a wire connected to the LED chip.
  • FIG. 2 shows a lighting device 10 provided in accordance with a first aspect of the invention.
  • the light emitting device 10 includes a substrate 2.
  • the substrate 2 can be made of a hard insulating material such as a ceramic material.
  • the substrate 2 has two first poles 21 and second poles 22 spaced apart from each other.
  • the two poles are preferably made of a metal material for connection to a power source for power transfer.
  • the light emitting device 10 further includes a reflective layer 3 disposed on the upper surface of the substrate 2.
  • the reflective layer 3 can be made of a material having good light-reflecting properties and belongs to the prior art.
  • the reflective layer 3 is used to reflect the light of the LED chip, causing most of the light to be emitted toward the upper side of the LED chip.
  • the light-emitting device 10 of the present invention further includes a fluorescent layer 4 disposed on the upper surface of the reflective layer 3.
  • the fluorescent layer 4 can be selected from different fluorescent materials (prior art) to cause the light-emitting device 10 of the present invention to emit light of different colors, that is, a person skilled in the art can select a suitable existing fluorescent material according to specific needs.
  • the light-emitting device 10 further includes an LED chip 5 disposed (or inserted) between the reflective layer 3 and the fluorescent layer 4.
  • the LED chip 5 is connected to the first pole 21 and the second pole 22 via two wires 6 penetrating the reflective layer 3, respectively. Since the wire 6 is connected to the LED chip 5 from below the LED chip 5, and there is no terminal shielding above the LED chip 5, no object is blocked above the LED chip 5, thereby improving the brightness of the light-emitting device 10 of the present invention. And uniformity.
  • each of the wires 6 may be configured to be perpendicular to the lower surface of the LED chip 5.
  • the wires 6 for manufacturing the vertical LED chips 5 are easier to manufacture than wires of other shapes, so that the production cost can be effectively reduced.
  • the LED chip 5 includes a substrate 51 embedded in the upper surface of the reflective layer 3.
  • Substrate 51 is used to support other components of the chip.
  • the substrate 51 may be made of a hard insulating material such as sapphire, silicon or silicon carbide.
  • the LED chip 5 further includes an N-pole conductive layer 52 and a P-pole conductive layer 53 which are spaced apart on the upper surface of the substrate 51.
  • the N-pole conductive layer 52 and the P-pole conductive layer 53 may each be made of a metal material such as chromium, platinum, gold, titanium, aluminum or the like or a combination thereof.
  • the N-pole conductive layer 52 and the P-pole conductive layer 53 are respectively connected to the two wires 6 penetrating the substrate 51, so that electrons in the pole legs 21 and 22 can be respectively transferred to the corresponding conductive layers. Meanwhile, in order to prevent electron transfer between the two-pole conductive layers, an insulating layer 58 may be provided between the N-pole conductive layer 52 and the P-pole conductive layer 53.
  • the LED chip 5 further includes an epitaxial layer 54 and an N-type semiconductor layer 55 which are sequentially disposed on the N-electroconductive layer 52, and a transparent conductive layer 56 and a P-type semiconductor layer 57 which are sequentially disposed on the P-electrode conductive layer 53. .
  • the LED chip 5 further includes a light-emitting layer 59 provided on the insulating layer 58 for contacting the N-type semiconductor layer 55 and the P-type semiconductor layer 57.
  • the LED chip 5 described above has a simple structure, is easy to manufacture, is safe and efficient to use, and is very suitable for the light-emitting device 10 of the present invention.
  • the epitaxial layer 54, the N-type semiconductor layer 55, the transparent conductive layer 56, the P-type semiconductor layer 57 and the insulating layer 58 and the luminescent layer 59 are all well known to those skilled in the art and will not be described in detail herein.
  • the upper surface of the light-emitting layer 59, the upper surface of the N-type semiconductor layer 55, and the upper surface of the P-type semiconductor layer 57 are in the same plane, and the lower surface of the light-emitting layer 59 is neither lower than the N-type semiconductor layer.
  • the lower surface of 55 is also not lower than the lower surface of the P-type semiconductor layer 57. This arrangement can promote the overall light emission of the light-emitting layer 59, and further utilize the light-emitting layer 59.
  • a heat dissipation mechanism 8 is provided on the lower surface of the substrate 2.
  • the heat dissipation by the heat dissipation mechanism 8 can greatly increase the service life of the LED chip 5.
  • the heat dissipation mechanism 8 is selected as a fin-type heat dissipation plate, that is, includes a heat sink 8a attached to the lower surface of the substrate 2 and fixedly spaced on the lower surface of the heat sink 8a.
  • a plurality of fins 8b (see Fig. 2). The fin 8b is used to increase the heat dissipation area, and to improve the heat dissipation capability and the heat dissipation speed of the heat sink 8a.
  • the substrate 51 is embedded in the reflective layer 3 and its upper surface is flush with the upper surface of the reflective layer 3.
  • the substrate 51 thus disposed is advantageous for manufacturing and production, and the production cost is lowered.
  • other structures of the LED chip 5 can be placed in the fluorescent layer 4 to prevent the light-emitting layer 59 from falling into the reflective layer 3 to affect the brightness of the light.
  • the light-emitting device 10 places the wire 6 under the LED chip 5, and also does not provide a terminal above the LED chip 5, thereby effectively preventing the wire 6 and the terminal from being blocked.
  • the light of the LED chip 5 can further improve the brightness and uniformity of the light-emitting device 10 of the present invention.
  • the present invention also provides a backlight module including the above-described light-emitting device 10. Since the backlight module uses the light-emitting device 10 according to the first aspect of the present invention, it can be both energy-saving and has a high brightness, thereby providing a sufficient light source for the liquid crystal panel.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Planar Illumination Modules (AREA)

Abstract

一种发光装置及背光模组，发光装置（10）包括：具有第一和第二极脚（21、22）的基板（2）；设置在基板（2）的上表面上的反射层（3）；设置在反射层（3）的上表面上的荧光层（4）；以及嵌入在反射层（3）与荧光层（4）之间的LED芯片（5）。其中LED芯片（5）通过两根贯穿反射层（3）的导线（6）分别与第一和第二极脚（21、22）相连。发光装置能够避免端子和导线遮挡LED芯片的光线，由此可以提高发光装置的亮度和均匀性。

Description

发光装置及背光模组
相关申请的交叉引用
本申请要求享有于2015年03月17日提交的名称为“发光装置及背光模组”的中国专利申请CN201510117069.7的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明涉及一种使用了LED芯片的发光装置，以及包括了该发光装置的背光模组。
背景技术
LED光源被称为第四代光源，具有节能环保、安全可靠、寿命持久、功耗低、亮度高、防水、微型、防震、易调光、光束集中、维护简便等优点，被广泛应用于各种指示、显示、装饰、背光源、普通照明等领域。液晶显示器内广泛地采用LED光源的背光模组，随着液晶显示器的发展，不断要求LED光源具有更高的亮度。
图1显示了现有技术中典型的发光装置100，该发光装置100包括：具有第一极脚106a和第二极脚106b的基板106；设置在基板106上的反射单元103；设置在反射单元103上的荧光单元104，在荧光单元104内设有端子104a和端子104b；以及能够被荧光单元104和反射单元103扣合在两者之间的LED芯片105。其中，端子104a和104b的一端均与LED芯片105相连，而另一端通过导线102分别与第一极脚106a和第二极脚106b相连。
然而，由于端子104a和端子104b及导线102都位于LED芯片105的上方，因此当LED芯片发光时端子104a和104b以及导线102均可遮挡LED芯片105的光线，降低发光装置100的亮度和均匀性。
发明内容
为了解决上述问题，本发明的目的提供一种发光装置，其结构能够避免端子 和导线遮挡LED芯片的光线，由此可以提高发光装置100的亮度和均匀性。
根据本发明的第一方面，提供了一种发光装置，包括：具有第一和第二极脚的基板；设置在所述基板的上表面上的反射层；设置在所述反射层的上表面上的用于控制出光颜色的荧光层；以及设置在反射层与荧光层之间的LED芯片。其中所述LED芯片通过两根贯穿所述反射层的导线分别与所述第一和第二极脚相连。
在一个实施例中，各所述导线均垂直所述LED芯片的下表面。
在一个实施例中，所述LED芯片包括：嵌入所述反射层的上表面内的衬底；间隔式设在所述衬底的上表面上的N极导电层和P极导电层，其中所述N极导电层和P极导电层分别与贯穿所述衬底的两根所述导线相连；依次设置在所述N极导电层上的外延层和N型半导体层；依次设置在所述P极导电层上的透明导电层和P型半导体层；设置在所述N极导电层与P极导电层之间的绝缘层；以及设在所述绝缘层上方的用于接触所述N型半导体层和P型半导体层的发光层。
在一个实施例中，所述反射层和荧光层在所述衬底的上表面上的正投影都完全处于所述衬底的上表面内。
在一个实施例中，所述发光层的上表面、所述N型半导体层的上表面和所述P型半导体层的上表面处于同一平面内，所述发光层的下表面既不低于所述N型半导体层的下表面，也不低于所述P型半导体层的下表面。
在一个实施例中，衬底嵌入在所述反射层内，并且所述衬底的上表面与所述反射层的上表面相齐平。
在一个实施例中，在所述基板的下表面上设有散热机构。
在一个实施例中，散热机构包括与所述基板的下表面相贴合的散热片，以及间隔开地固定在所述散热片的下表面上的多个翅片。
根据本发明第二方面，提供了一种包括了根据本发明的第一方面所述的发光装置的背光模组。
根据本发明的发光装置把导线设置在LED芯片的下方，而且未在LED芯片的上方设有端子，由此可以有效避免导线和端子遮挡LED芯片的光线，提高本发明的发光装置的亮度和均匀性。另外，根据本发明的发光装置的结构简单，生产成本低，使用安全可靠，便于实施推广应用。
根据本发明的背光模组由于使用了根据本发明的第一方面所述的发光装置，使得该背光模组既可以节能又可以具有较高的亮度，从而能为液晶面板提供充足 的光源。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1显示了现有技术中典型的发光装置；
图2显示了根据本发明的发光装置；以及
图3显示了根据本发明的发光装置的LED芯片以及与LED芯片相连的导线。
在附图中相同的部件使用相同的附图标记。附图并未按照实际的比例绘制。
具体实施方式
下面将结合附图对本发明作进一步说明。
图2显示了根据本发明的第一方面所提供的发光装置10。该发光装置10包括基板2。基板2可由硬质的绝缘材质制成，例如陶瓷材料。基板2具有两个彼此间隔开的第一极脚21和第二极脚22。这两个极脚优选为由金属材料制成，以便用于连接电源，实现电能的传输。
同时，该发光装置10还包括设置在基板2的上表面上的反射层3。反射层3可由反光性能好的材质制成，属于现有技术。反射层3用于反射LED芯片的光线，促使大部分光线朝LED芯片的上方射出。
另外，本发明的发光装置10还包括设置在反射层3的上表面上的荧光层4。荧光层4可选择不同的荧光材料(属于现有技术)促使本发明的发光装置10发出不同颜色的光，也就是说本领域技术人员可根据具体需要，选择合适的现有荧光材料。
此外，根据本发明的发光装置10还包括设置(或塞入)在反射层3与荧光层4之间的LED芯片5。LED芯片5通过两根贯穿反射层3的导线6分别与第一极脚21和第二极脚22相连。由于导线6从LED芯片5的下方连接该LED芯片5，而且LED芯片5的上方也未有端子遮挡，使得LED芯片5的上方没有物体遮挡光线，由此可以提高本发明的发光装置10的亮度和均匀性。
为了降低生产成本，各导线6可构造成与LED芯片5的下表面相垂直。制造垂直LED芯片5的导线6要比其他形状的导线更加容易制造，这样便可有效地降低生产成本。
如图2和3所示，LED芯片5包括嵌入反射层3的上表面内的衬底51。衬底51用于支撑芯片的其他部件。衬底51可由蓝宝石、硅或碳化硅等硬质绝缘材料制成。LED芯片5还包括间隔式设在衬底51的上表面上的N极导电层52和P极导电层53。N极导电层52和P极导电层53均可由铬、铂、金、钛、铝等金属材料或其组合制成。N极导电层52和P极导电层53分别与贯穿衬底51的两根导线6相连，使得极脚21和22内的电子可分别传递到相应的导电层。同时，为了防止两极导电层之间存有电子移动，在N极导电层52和P极导电层53之间可设有绝缘层58。
根据本发明，LED芯片5还包括依次设置在N极导电层52上的外延层54和N型半导体层55，以及依次设置在P极导电层53上的透明导电层56和P型半导体层57。另外，LED芯片5还包括设在绝缘层58上的用于接触N型半导体层55和P型半导体层57的发光层59。以上所述的LED芯片5的结构简单，制造容易，使用安全高效，并且非常适用于本发明的发光装置10。其中，所述的外延层54、N型半导体层55、透明导电层56、P型半导体层57和绝缘层58以及发光层59均属于本领域技术人员熟知的，在此不作详细描述。
在一个实施例中，发光层59的上表面、N型半导体层55的上表面和P型半导体层57的上表面处于同一平面内，而发光层59的下表面既不低于N型半导体层55的下表面，也不低于P型半导体层57的下表面。这种设置方式能够促进发光层59整体式发光，进而充分利用发光层59。
在一个实施例中，在基板2的下表面上设有散热机构8。利用散热机构8的散热能够大幅度提高LED芯片5的使用寿命。本实施例为了更好地增强散热效果，散热机构8选为翅片式散热板，即包括贴合于基板2下表面上的散热片8a以及间隔开地固定在散热片8a的下表面上的多个翅片8b(见图2)。翅片8b这要用于增加散热面积，提高散热片8a的散热能力和散热速度。
在一个实施例中，衬底51嵌入在反射层3内，并且其上表面与反射层3的上表面相齐平。这样设置的衬底51有利于制造生产，降低生产成本，同时还能够将LED芯片5的其他结构置于荧光层4内，避免发光层59落在反射层3内后影响出光的亮度。
综上可知，根据本发明的发光装置10把导线6设置在LED芯片5的下方，并且也未在LED芯片5的上方设置端子，由此可以有效避免导线6和端子遮挡 LED芯片5的光线，进而可以提高本发明的发光装置10的亮度和均匀性。
除根据本发明的第一方面所提供的发光装置10外，本发明还提供了一种包括上述发光装置10的背光模组。由于该背光模组使用了根据本发明的第一方面所述的发光装置10，使得其既可以节能又具有可以较高的亮度，从而能为液晶面板提供充足的光源。
虽然已经参考优选实施例对本发明进行了描述，但在不脱离本发明的范围的情况下，可以对其进行各种改进并且可以用等效物替换其中的部件。尤其是，只要不存在结构冲突，各个实施例中所提到的各项技术特征均可以任意方式组合起来。本发明并不局限于文中公开的特定实施例，而是包括落入权利要求的范围内的所有技术方案。

Claims (16)

  1. 一种发光装置，所述发光装置包括：
    具有第一和第二极脚的基板；
    设置在所述基板的上表面上的反射层；
    设置在所述反射层的上表面上的用于控制出光颜色的荧光层；以及
    设置在反射层与荧光层之间的LED芯片，其中所述LED芯片通过两根贯穿所述反射层的导线分别与所述第一和第二极脚相连。
  2. 根据权利要求1所述的发光装置，其中，各所述导线均垂直所述LED芯片的下表面。
  3. 根据权利要求1所述的发光装置，其中，所述LED芯片包括：嵌入所述反射层的上表面内的衬底；间隔式设在所述衬底的上表面上的N极导电层和P极导电层，其中所述N极导电层和P极导电层分别与贯穿所述衬底的两根所述导线相连；依次设置在所述N极导电层上的外延层和N型半导体层；依次设置在所述P极导电层上的透明导电层和P型半导体层；设置在所述N极导电层与P极导电层之间的绝缘层；以及设在所述绝缘层上方的用于接触所述N型半导体层和P型半导体层的发光层。
  4. 根据权利要求3所述的发光装置，其中，所述反射层和荧光层在所述衬底的上表面上的正投影均完全处于所述衬底的上表面内。
  5. 根据权利要求3所述的发光装置，其中，所述发光层的上表面、所述N型半导体层的上表面和所述P型半导体层的上表面处于同一平面内，所述发光层的下表面既不低于所述N型半导体层的下表面，也不低于所述P型半导体层的下表面。
  6. 根据权利要求3所述的发光装置，其中，所述衬底嵌入在所述反射层内，并且所述衬底的上表面与所述反射层的上表面相齐平。
  7. 根据权利要求1所述的发光装置，其中，在所述基板的下表面上设有散热机构。
  8. 根据权利要求7所述的发光装置，其中，所述散热机构包括与所述基板的下表面相贴合的散热片，以及间隔开地固定在所述散热片的下表面上的多个翅片。
  9. 一种背光模组，所述背光模组包括发光装置，所述发光装置包括：
    具有第一和第二极脚的基板；
    设置在所述基板的上表面上的反射层；
    设置在所述反射层的上表面上的用于控制出光颜色的荧光层；以及
    设置在反射层与荧光层之间的LED芯片，其中所述LED芯片通过两根贯穿所述反射层的导线分别与所述第一和第二极脚相连。
  10. 根据权利要求9所述的背光模组，其中，各所述导线均垂直所述LED芯片的下表面。
  11. 根据权利要求9所述的背光模组，其中，所述LED芯片包括：嵌入所述反射层的上表面内的衬底；间隔式设在所述衬底的上表面上的N极导电层和P极导电层，其中所述N极导电层和P极导电层分别与贯穿所述衬底的两根所述导线相连；依次设置在所述N极导电层上的外延层和N型半导体层；依次设置在所述P极导电层上的透明导电层和P型半导体层；设置在所述N极导电层与P极导电层之间的绝缘层；以及设在所述绝缘层上方的用于接触所述N型半导体层和P型半导体层的发光层。
  12. 根据权利要求11所述的背光模组，其中，所述反射层和荧光层在所述衬底的上表面上的正投影均完全处于所述衬底的上表面内。
  13. 根据权利要求11所述的背光模组，其中，所述发光层的上表面、所述N型半导体层的上表面和所述P型半导体层的上表面处于同一平面内，所述发光层的下表面既不低于所述N型半导体层的下表面，也不低于所述P型半导体层的下表面。
  14. 根据权利要求11所述的背光模组，其中，所述衬底嵌入在所述反射层内，并且所述衬底的上表面与所述反射层的上表面相齐平。
  15. 根据权利要求9所述的背光模组，其中，在所述基板的下表面上设有散热机构。
  16. 根据权利要求15所述的背光模组，其中，所述散热机构包括与所述基板的下表面相贴合的散热片，以及间隔开地固定在所述散热片的下表面上的多个翅片。
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