WO2016141684A1 - 彩膜显示层、显示面板及制备方法 - Google Patents

彩膜显示层、显示面板及制备方法 Download PDF

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Publication number
WO2016141684A1
WO2016141684A1 PCT/CN2015/087884 CN2015087884W WO2016141684A1 WO 2016141684 A1 WO2016141684 A1 WO 2016141684A1 CN 2015087884 W CN2015087884 W CN 2015087884W WO 2016141684 A1 WO2016141684 A1 WO 2016141684A1
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Prior art keywords
black matrix
electric field
spacer
color film
data line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/CN2015/087884
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English (en)
French (fr)
Inventor
朱亚文
莫再隆
胡伟
周全国
樊浩原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
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Priority to US14/916,298 priority Critical patent/US9733510B2/en
Publication of WO2016141684A1 publication Critical patent/WO2016141684A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
    • G02F1/133334—Electromagnetic shields
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133519—Overcoatings

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to a color film display layer, a preparation method thereof, a display panel, and a preparation method thereof.
  • FIG. 1 is a cross-sectional view of a display panel of the prior art
  • FIG. 2 is another cross-sectional view of the display panel of FIG. 1.
  • the direction of the screenshot of FIG. 1 is parallel to the direction of the data line on the array substrate
  • the cross-sectional view shows the thin film transistor
  • the direction of the screenshot of FIG. 2 is parallel to the direction of the gate line on the array substrate.
  • the display panel includes a color film display layer 101 and an array substrate 102 disposed on the box, and a liquid crystal layer 103 is disposed between the color film display layer 101 and the array substrate 102.
  • the adjacent pixel units on the array substrate 102 are loaded with different voltages, for example, the pixel unit 104 is loaded with a high level, the pixel unit 105 is loaded with a low level, and the interfering electric field 106 of the pixel unit 104 is applied to the liquid crystal molecules of the pixel unit 105.
  • the formation of interference causes the deflection direction of the liquid crystal molecules 107 to change, so that a cross color phenomenon occurs.
  • the present disclosure provides a color film display layer, a method for fabricating the same, a display panel, and a method for fabricating the same, which are used to solve the problem that the interference electric field between adjacent pixel units in the prior art affects the arrangement of liquid crystal molecules.
  • the present disclosure provides a color film display layer comprising a substrate on which a color resin is disposed, a black matrix is disposed between the color resins, and an electric field shielding structure is disposed above the black matrix.
  • the electric field shielding structure is used to shield an interfering electric field between adjacent pixel units.
  • the substrate substrate is provided with a thin film transistor and a data line, and the electric field shielding junction The structure is disposed at a position above the black matrix corresponding to the data line.
  • the electric field shielding structure comprises a first spacer and a conductive layer, and the conductive layer is disposed on a surface of the first spacer.
  • a plurality of the conductive layers are electrically coupled to each other and grounded through a common electrode line.
  • the first spacer is a strip spacer.
  • a protective layer is disposed on the black matrix and the color resin, and the first spacer is disposed on the protective layer.
  • the protective layer is provided with a second spacer, and the second spacer is a column spacer.
  • the present disclosure also provides a display panel comprising any of the above color film display layers.
  • the method further includes an array substrate, wherein the array substrate is provided with a data line, and the electric field shielding structure is disposed at a position above the black matrix corresponding to the data line.
  • the present disclosure also provides a method for preparing a color film display layer, comprising:
  • An electric field shielding structure is formed over the black matrix for shielding an interfering electric field between adjacent pixel units.
  • a thin film transistor and a data line are formed on the base substrate, and the electric field shielding structure is formed at a position above the black matrix corresponding to the data line.
  • the step of forming an electric field shielding structure at a position corresponding to the data line above the black matrix includes:
  • a conductive layer is formed on a surface of the first spacer.
  • the step of forming the first spacer above the position corresponding to the data line above the black matrix comprises:
  • the step of forming a first spacer at a position corresponding to the data line above the black matrix includes:
  • a first spacer is formed on the protective layer.
  • the first spacer is formed at a position corresponding to the data line above the black matrix.
  • a second spacer is formed on the protective layer, and the second spacer is a column spacer.
  • the present disclosure also provides a method for preparing a display panel, comprising the method for preparing the color film display layer.
  • the display panel further includes an array substrate, wherein the array substrate is formed with data lines, and the step of forming an electric field shielding structure over the black matrix comprises:
  • An electric field shielding structure is formed at a position above the black matrix corresponding to the data line on the array substrate.
  • the position corresponding to the data line above the black matrix is provided with an electric field shielding structure, and the electric field shielding structure is used for shielding adjacent pixel units.
  • the interfering electric field between them eliminates or reduces the interference electric field between adjacent pixel units, effectively solving the cross color problem.
  • the edge induced charge between the edge signal line of the display panel and the pixel electrode can be eliminated or reduced, and the edge leakage problem of the display panel is effectively solved.
  • FIG. 1 is a cross-sectional view of a display panel in the prior art
  • Figure 2 is another cross-sectional view of the display panel of Figure 1;
  • FIG. 3 is a schematic structural diagram of a color film display layer according to Embodiment 1 of the present disclosure.
  • Figure 4 is a cross-sectional view of the color film display layer of Figure 3 taken along line A-A;
  • FIG. 5 is a cross-sectional view of a display panel according to Embodiment 2 of the present disclosure.
  • Figure 6 is another cross-sectional view of the display panel shown in Figure 5;
  • FIG. 7 is a flowchart of a method for preparing a color film display layer according to Embodiment 3 of the present disclosure.
  • the color film display layer provided by the present disclosure the preparation method thereof, the display panel and the preparation method thereof will be described in detail below with reference to the accompanying drawings. It should be noted that the present embodiment is only described for the display panel of the FFS mode, but other display modes, for example, the display panel of the IPS mode, also fall within the protection scope of the present disclosure.
  • FIG. 3 is a schematic structural view of a color film display layer according to Embodiment 1 of the present disclosure
  • FIG. 4 is a cross-sectional view of the color film display layer of FIG. 3 taken along line A-A.
  • the color film display layer 101 includes a base substrate on which a color resin 108 including a red resin 201, a green resin 202, and a blue resin 203 is provided, and the above-described color resin 108 A black matrix 109 is disposed therebetween.
  • An electric field shielding structure 204 is disposed along the long side direction of the black matrix 109.
  • the electric field shielding structure 204 can shield an interference electric field between adjacent pixel units.
  • the electric field shielding structure 204 may be disposed at a position corresponding to a data line on the array substrate.
  • the electric field shielding structure 204 may be disposed at a position corresponding to the data line.
  • the electric field shielding structure 204 is disposed in the longitudinal direction of the black matrix 109 mainly for shielding interference electric fields between pixel units corresponding to color resins of different colors.
  • an electric field shielding structure 204 may also be disposed in the short side direction of the black matrix 109.
  • the electric field shielding structure shields the interference electric field between adjacent pixel units, thereby eliminating or reducing the interference electric field between adjacent pixel units, and effectively solving the cross color problem.
  • the edge induced charge between the edge signal line of the display panel and the pixel electrode can be eliminated or reduced, and the edge leakage problem of the display panel is effectively solved.
  • a protective layer (Over Coat) 205 is disposed over the color resin 108 and the black matrix 109.
  • the protective layer 205 is a flat layer, and the electric field shielding structure 204 is disposed on the flat layer.
  • the electric field shielding structure 204 includes a first spacer 206 and a conductive layer 207 disposed on a surface of the first spacer 206.
  • the conductive layer 207 may also be disposed on the protective layer 205.
  • the plurality of electric field shielding structures 204 have a plurality of conductive layers 207 electrically connected to each other, and the conductive layers 207 are connected to the common electrode lines and grounded through the common electrode lines.
  • the protective layer 205 may further be provided with a second spacer (not shown), and the second spacer is disposed on the protective layer 205 at a position corresponding to the thin film transistor on the array substrate.
  • the first spacer 206 is a strip spacer
  • the second spacer is a column spacer.
  • an electric field shielding structure is disposed above the black matrix, and the electric field shielding structure is configured to shield an interference electric field between adjacent pixel units, thereby eliminating or reducing between adjacent pixel units. Interfering with the electric field effectively solves the problem of cross color. Can also eliminate or reduce the display The edge between the edge signal line of the display panel and the pixel electrode induces a charge, which effectively solves the problem of edge leakage of the display panel.
  • FIG. 5 is a cross-sectional view of a display panel according to Embodiment 2 of the present disclosure
  • FIG. 6 is another cross-sectional view of the display panel shown in FIG. 5.
  • the screen direction of FIG. 5 is parallel to the data line direction on the array substrate
  • the cross-sectional view shows the thin film transistor
  • the screen direction of FIG. 6 is parallel to the gate line direction on the array substrate.
  • the display panel includes a color film display layer 101.
  • the display panel is a liquid crystal display panel
  • the display panel includes an array substrate 102 and the color film display layer 101.
  • the array substrate 102 includes a substrate, and the substrate 205 is sequentially provided with a gate 208.
  • the electric field shielding structure 204 on the color film display layer is disposed corresponding to the data line 307.
  • the array substrate 102 and the color film display layer 101 are disposed on the box, and the display panel further includes a liquid crystal layer disposed between the array substrate 102 and the color film display layer 101, The alignment layer of the liquid crystal molecules is oriented and the sealant for connecting the array substrate 102 and the color film display layer 101.
  • the electric field shielding structure 204 can be disposed at a position corresponding to the data line.
  • the COA display panel includes the color film display layer 101.
  • the color film display layer 101 is integrated with an array driving structure, and the color film display layer 101 and the counter substrate are disposed opposite to each other with a liquid crystal interposed therebetween.
  • an electric field shielding structure is disposed above the black matrix, and the electric field shielding structure is configured to shield an interference electric field between adjacent pixel units, thereby eliminating or reducing an interference electric field between adjacent pixel units. , effectively solve the problem of cross color.
  • the edge induced charge between the edge signal line of the display panel and the pixel electrode can be eliminated or reduced, and the edge leakage problem of the display panel is effectively solved.
  • FIG. 7 is a flowchart of a method for preparing a color film display layer according to Embodiment 3 of the present disclosure. As shown in FIG. 7, the preparation method includes:
  • Step 7001 forming a black matrix on the base substrate
  • Step 7002 forming a color resin on the base substrate, the black matrix being located between the color resins;
  • Step 7003 forming an electric field shielding structure above the black matrix, the electric field shielding structure for shielding an interference electric field between adjacent pixel units.
  • a red resin 201 is formed on the base substrate.
  • a green resin 202 is formed on the base substrate.
  • a blue resin 203 is formed on the base substrate.
  • the red resin 201, the green resin 202, and the blue resin 203 are collectively referred to as a color resin 108.
  • the black matrix 109 is located between the color resins 108.
  • a protective layer 205 is formed over the color resin 108 and the black matrix 109.
  • the protective layer 205 is a flat layer.
  • an electric field shielding structure 204 is formed at a position corresponding to a data line on the array substrate, and the electric field shielding structure 204 can shield interference between adjacent pixel units. electric field.
  • the electric field shielding structure 204 formed in the longitudinal direction of the black matrix 109 is mainly for shielding an interference electric field between pixel units corresponding to color resins of different colors.
  • the electric field shielding structure 204 can also be formed in the short side direction of the black matrix 109. Therefore, the electric field shielding structure shields the interference electric field between adjacent pixel units, thereby eliminating or reducing the interference electric field between adjacent pixel units, and effectively solving the cross color problem.
  • the edge induced charge between the edge signal line of the display panel and the pixel electrode can be eliminated or reduced, and the edge leakage problem of the display panel is effectively solved.
  • the electric field shielding structure 204 includes a first spacer 206 and a conductive layer 207.
  • the electric field shielding structure 204 can be disposed at a position corresponding to the data lines on the array substrate.
  • a first spacer 206 is formed at a position above the black matrix 109 corresponding to the data line, and a conductive layer 207 is formed on a surface of the first spacer 206.
  • the conductive layer 207 may also be formed on the protective layer 205.
  • the plurality of electric field shielding structures 204 have a plurality of conductive layers 207, The conductive layers 207 are electrically coupled to each other, and the conductive layer 207 is connected to the common electrode line and grounded through the common electrode line.
  • the electric field shielding structure 204 can be disposed at a position corresponding to the data line.
  • a first spacer 206 is formed at a position above the black matrix 109 corresponding to the data line, and a conductive layer 207 is formed on a surface of the first spacer 206.
  • the conductive layer 207 may also be formed on the protective layer 205.
  • the plurality of electric field shielding structures 204 have a plurality of conductive layers 207 electrically connected to each other, and the conductive layers 207 are connected to the common electrode lines and grounded through the common electrode lines.
  • a first spacer is formed at a position corresponding to the data line above the black matrix, and a second spacer is formed on the protective layer at a position corresponding to the thin film transistor.
  • the first spacer 206 is a strip spacer, and the second spacer is a column spacer.
  • an electric field shielding structure is disposed above the black matrix, and the electric field shielding structure is configured to shield an interference electric field between adjacent pixel units, thereby eliminating or reducing adjacent pixel units.
  • the interference electric field between them effectively solves the cross color problem.
  • the edge induced charge between the edge signal line of the display panel and the pixel electrode can be eliminated or reduced, and the edge leakage problem of the display panel is effectively solved.
  • the embodiment provides a method for preparing a display panel, including the steps of the method for preparing the color film display layer described in the third embodiment.
  • the display panel of the embodiment further includes an array substrate, wherein the array substrate is formed with data lines, and the step of forming an electric field shielding structure over the black matrix comprises:
  • An electric field shielding structure is formed at a position above the black matrix corresponding to the data line.
  • an electric field shielding structure is disposed above the black matrix, and the electric field shielding structure is configured to shield an interference electric field between adjacent pixel units, thereby eliminating or reducing between adjacent pixel units.
  • the interference electric field effectively solves the cross color problem.
  • the edge induced charge between the edge signal line of the display panel and the pixel electrode can be eliminated or reduced, and the edge leakage problem of the display panel is effectively solved.

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Abstract

一种彩膜显示层及其制备方法、显示面板及其制备方法。所述彩膜显示层包括衬底基板，所述衬底基板上设置有彩色树脂（108），所述彩色树脂（108）之间设置有黑矩阵（109），所述黑矩阵（109）的上方设置有电场屏蔽结构（204），所述电场屏蔽结构（204）用于屏蔽相邻像素单元之间的干扰电场。

Description

彩膜显示层、显示面板及制备方法
相关申请的交叉引用
本申请主张在2015年3月9日在中国提交的中国专利申请号No.201510102403.1的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，尤其涉及一种彩膜显示层及其制备方法、显示面板及其制备方法。
背景技术
图1为现有技术中显示面板的一种截面图，图2为图1所示显示面板的另一种截面图。如图1和图2所示，图1的截图方向与阵列基板上的数据线方向平行，而且截面图显示薄膜晶体管，而图2的截图方向与阵列基板上的栅线方向平行。所述显示面板包括对盒设置的彩膜显示层101和阵列基板102，彩膜显示层101和阵列基板102之间设置有液晶层103。对阵列基板102上相邻的像素单元加载不同的电压，例如，对像素单元104加载高电平，对像素单元105加载低电平，像素单元104的干扰电场106会对像素单元105的液晶分子107形成干扰，导致液晶分子107的偏转方向发生改变，从而出现串色现象。
发明内容
为解决上述问题，本公开提供一种彩膜显示层及其制备方法、显示面板及其制备方法，用于解决现有技术中相邻的像素单元之间的干扰电场影响液晶分子的排布，导致串色现象发生的问题。
本公开提供一种彩膜显示层，包括衬底基板，所述衬底基板上设置有彩色树脂，所述彩色树脂之间设置有黑矩阵，所述黑矩阵的上方设置有电场屏蔽结构，所述电场屏蔽结构用于屏蔽相邻像素单元之间的干扰电场。
可选的，所述衬底基板上设置有薄膜晶体管和数据线，所述电场屏蔽结 构设置在所述黑矩阵的上方与所述数据线对应的位置。可选的，所述电场屏蔽结构包括第一隔垫物和导电层，所述导电层设置在所述第一隔垫物的表面。
可选的，多个所述导电层彼此电联接且通过公共电极线接地。
可选的，所述第一隔垫物为条状隔垫物。
可选的，所述黑矩阵和所述彩色树脂上设置有保护层，所述第一隔垫物设置在所述保护层上。
可选的，所述保护层上设置有第二隔垫物，所述第二隔垫物为柱状隔垫物。
本公开还提供一种显示面板，包括上述任一彩膜显示层。可选的，还包括阵列基板，所述阵列基板上设置有数据线，所述电场屏蔽结构设置在所述黑矩阵的上方与所述数据线对应的位置。
本公开还提供一种彩膜显示层的制备方法，包括：
在衬底基板上形成黑矩阵；
在所述衬底基板上形成彩色树脂，所述黑矩阵位于所述彩色树脂之间；
在所述黑矩阵的上方形成电场屏蔽结构，所述电场屏蔽结构用于屏蔽相邻像素单元之间的干扰电场。
可选的，所述衬底基板上形成有薄膜晶体管和数据线，所述电场屏蔽结构形成在所述黑矩阵的上方与所述数据线对应的位置。
可选的，所述在所述黑矩阵的上方与数据线对应的位置形成电场屏蔽结构的步骤包括：
在所述黑矩阵的上方与数据线对应的位置形成第一隔垫物；
在所述第一隔垫物的表面形成导电层。
可选的，所述在所述黑矩阵的上方与数据线对应的位置形成第一隔垫物的步骤之前包括：
在所述黑矩阵和所述彩色树脂上形成保护层；
所述在所述黑矩阵的上方与数据线对应的位置形成第一隔垫物的步骤包括：
在所述保护层上形成第一隔垫物。
可选的，所述在所述黑矩阵的上方与数据线对应的位置形成第一隔垫物 的同时，在所述保护层上形成第二隔垫物，所述第二隔垫物为柱状隔垫物。
本公开还提供一种显示面板的制备方法，包括所述的彩膜显示层的制备方法。
可选的，所述显示面板还包括阵列基板，所述阵列基板上形成有数据线，所述在所述黑矩阵的上方形成电场屏蔽结构的步骤包括：
在所述黑矩阵的上方与所述阵列基板上的数据线对应的位置形成电场屏蔽结构。
本公开具有下述有益效果：
本公开提供的彩膜显示层及其制备方法、显示面板及其制备方法中，黑矩阵的上方与数据线对应的位置设置有电场屏蔽结构，所述电场屏蔽结构用于屏蔽相邻像素单元之间的干扰电场，从而消除或减少相邻像素单元之间的干扰电场，有效解决了串色问题。同时也能消除或减少显示面板的边缘信号线和像素电极之间的边缘感应电荷，有效解决显示面板的边缘漏光问题。
附图说明
图1为现有技术中显示面板的一种截面图；
图2为图1所示显示面板的另一种截面图；
图3为本公开实施例一提供的一种彩膜显示层的结构示意图；
图4为图3所示彩膜显示层的A-A截面图；
图5为本公开实施例二提供的一种显示面板的一种截面图；
图6为图5所示显示面板的另一种截面图；
图7为本公开实施例三提供的一种彩膜显示层的制备方法的流程图。
具体实施方式
为使本领域的技术人员更好地理解本公开的技术方案，下面结合附图对本公开提供的彩膜显示层及其制备方法、显示面板及其制备方法进行详细描述。需要说明的是，本实施例只针对FFS模式的显示面板进行描述，但是其它显示模式，例如，IPS模式的显示面板也属于本公开的保护范围。
实施例一
图3为本公开实施例一提供的一种彩膜显示层的结构示意图，图4为图3所示彩膜显示层的A-A截面图。如图3和图4所示，彩膜显示层101包括衬底基板，所述衬底基板上设置有包括红色树脂201、绿色树脂202和蓝色树脂203的彩色树脂108，上述彩色树脂108之间设置有黑矩阵109，沿所述黑矩阵109的长边方向，设置有电场屏蔽结构204，所述电场屏蔽结构204可以屏蔽相邻像素单元之间的干扰电场。例如，在显示面板中，电场屏蔽结构204可以设置在与阵列基板上的数据线对应的位置。又例如，COA(Color Filter On Array，彩膜与阵列基板集成技术)显示面板中，电场屏蔽结构204可以设置在与数据线对应的位置。具体来说，所述电场屏蔽结构204设置在所述黑矩阵109的长边方向上主要是为了屏蔽不同颜色的彩色树脂对应的像素单元之间的干扰电场。当然，在所述黑矩阵109的短边方向上也可以设置有电场屏蔽结构204。因此，所述电场屏蔽结构屏蔽了相邻像素单元之间的干扰电场，从而消除或减少相邻像素单元之间的干扰电场，有效解决了串色问题。同时也能消除或减少显示面板的边缘信号线和像素电极之间的边缘感应电荷，有效解决显示面板的边缘漏光问题。
参见图4，所述彩色树脂108和黑矩阵109之上设置有保护层(Over Coat)205。可选的，所述保护层205为平坦层，所述电场屏蔽结构204设置在所述平坦层上。可选的，所述电场屏蔽结构204包括第一隔垫物206和导电层207，所述导电层207设置在所述第一隔垫物206的表面。当然，所述导电层207还可以设置在所述保护层205上。多个电场屏蔽结构204具有多个导电层207，多个导电层207彼此之间相互电联接，而且所述导电层207与公共电极线连接，通过所述公共电极线接地。
在实际应用中，所述保护层205上还可以设置有第二隔垫物(图中未示出)，所述第二隔垫物设置在保护层205上与阵列基板上薄膜晶体管对应的位置。所述第一隔垫物206为条状隔垫物，所述第二隔垫物为柱状隔垫物。
本实施例提供的彩膜显示层中，黑矩阵的上方设置有电场屏蔽结构，所述电场屏蔽结构用于屏蔽相邻像素单元之间的干扰电场，从而消除或减少相邻像素单元之间的干扰电场，有效解决了串色问题。同时也能消除或减少显 示面板的边缘信号线和像素电极之间的边缘感应电荷，有效解决显示面板的边缘漏光问题。
实施例二
图5为本公开实施例二提供的一种显示面板的一种截面图，图6为图5所示显示面板的另一种截面图。如图5和图6所示，图5的截图方向与阵列基板上的数据线方向平行，而且截面图显示薄膜晶体管，而图6的截图方向与阵列基板上的栅线方向平行。所述显示面板包括彩膜显示层101。例如，所述显示面板为液晶显示面板，所述显示面板包括阵列基板102和上述的彩膜显示层101，所述阵列基板102包括衬底基板，所述衬底基板上依次设置有栅极208、栅绝缘层209、有源层301、像素电极302、源极303、漏极304、数据线307、钝化层305以及公共电极层306。所述彩膜显示层上的电场屏蔽结构204与所述数据线307对应设置。可选的，所述阵列基板102与所述彩膜显示层101对盒设置，而且所述显示面板还包括设置在所述阵列基板102与所述彩膜显示层101之间的液晶层、对液晶分子起取向作用的取向层以及连接所述阵列基板102与所述彩膜显示层101的封框胶。又例如，COA(Color Filter On Array，彩膜与阵列基板集成技术)显示面板中，电场屏蔽结构204可以在与数据线对应的位置设置。COA显示面板包括所述彩膜显示层101，所述彩膜显示层101上集成有阵列驱动结构，所述彩膜显示层101与对盒基板对盒设置，其间夹设液晶。
对于所述彩膜显示层的具体内容可参照上述实施例一的描述，此处不再赘述。
本实施例提供的显示面板中，黑矩阵的上方设置有电场屏蔽结构，所述电场屏蔽结构用于屏蔽相邻像素单元之间的干扰电场，从而消除或减少相邻像素单元之间的干扰电场，有效解决了串色问题。同时也能消除或减少显示面板的边缘信号线和像素电极之间的边缘感应电荷，有效解决显示面板的边缘漏光问题。
实施例三
图7为本公开实施例三提供的一种彩膜显示层的制备方法的流程图。如图7所示，所述制备方法包括：
步骤7001、在衬底基板上形成黑矩阵；
步骤7002、在所述衬底基板上形成彩色树脂，所述黑矩阵位于所述彩色树脂之间；
步骤7003、在所述黑矩阵的上方形成电场屏蔽结构，所述电场屏蔽结构用于屏蔽相邻像素单元之间的干扰电场。
以下，详细说明上述制备方法。
如图3、图4所示，在衬底基板上形成黑矩阵109之后，在所述衬底基板上形成红色树脂201。在所述衬底基板上形成红色树脂201之后，在所述衬底基板上形成绿色树脂202。在所述衬底基板上形成绿色树脂202之后，在所述衬底基板上形成蓝色树脂203。将所述红色树脂201、绿色树脂202和蓝色树脂203统称为彩色树脂108。所述黑矩阵109位于所述彩色树脂108之间。在所述衬底基板上形成蓝色树脂203之后，在所述彩色树脂108和黑矩阵109之上形成保护层205。可选的，所述保护层205为平坦层。
本实施例中，在所述黑矩阵109的长边方向上，在与阵列基板上的数据线对应的位置形成电场屏蔽结构204，所述电场屏蔽结构204可以屏蔽相邻像素单元之间的干扰电场。具体来说，在所述黑矩阵109的长边方向上形成的电场屏蔽结构204主要是为了屏蔽不同颜色的彩色树脂对应的像素单元之间的干扰电场。当然，在所述黑矩阵109的短边方向上也可以形成电场屏蔽结构204。因此，所述电场屏蔽结构屏蔽了相邻像素单元之间的干扰电场，从而消除或减少相邻像素单元之间的干扰电场，有效解决了串色问题。同时也能消除或减少显示面板的边缘信号线和像素电极之间的边缘感应电荷，有效解决显示面板的边缘漏光问题。
可选的，所述电场屏蔽结构204包括第一隔垫物206和导电层207。例如，在显示面板中，电场屏蔽结构204可以在与阵列基板上的数据线对应的位置设置。在所述黑矩阵109的上方与数据线对应的位置形成第一隔垫物206，在所述第一隔垫物206的表面形成导电层207。当然，也可以在所述保护层205上形成所述导电层207。多个电场屏蔽结构204具有多个导电层207，多 个导电层207彼此之间相互电联接，而且所述导电层207与公共电极线连接，通过所述公共电极线接地。又例如，COA(Color Filter On Array，彩膜与阵列基板集成技术)显示面板中，电场屏蔽结构204可以在与数据线对应的位置设置。在所述黑矩阵109的上方与数据线对应的位置形成第一隔垫物206，在所述第一隔垫物206的表面形成导电层207。当然，也可以在所述保护层205上形成所述导电层207。多个电场屏蔽结构204具有多个导电层207，多个导电层207彼此之间相互电联接，而且所述导电层207与公共电极线连接，通过所述公共电极线接地。在实际应用中，在所述黑矩阵的上方与数据线对应的位置形成第一隔垫物的同时，在所述保护层上与薄膜晶体管对应的位置形成第二隔垫物。所述第一隔垫物206为条状隔垫物，所述第二隔垫物为柱状隔垫物。
本实施例提供的彩膜显示层的制备方法中，黑矩阵的上方设置有电场屏蔽结构，所述电场屏蔽结构用于屏蔽相邻像素单元之间的干扰电场，从而消除或减少相邻像素单元之间的干扰电场，有效解决了串色问题。同时也能消除或减少显示面板的边缘信号线和像素电极之间的边缘感应电荷，有效解决显示面板的边缘漏光问题。
实施例四
本实施例提供一种显示面板的制备方法，包括实施例三中所述的彩膜显示层的制备方法的步骤。
与COA显示面板不同的是，本实施例中所述显示面板还包括阵列基板，所述阵列基板上形成有数据线，所述在所述黑矩阵的上方形成电场屏蔽结构的步骤包括：
在所述黑矩阵的上方与数据线对应的位置形成电场屏蔽结构。
本实施例提供的显示面板的制备方法中，黑矩阵的上方设置有电场屏蔽结构，所述电场屏蔽结构用于屏蔽相邻像素单元之间的干扰电场，从而消除或减少相邻像素单元之间的干扰电场，有效解决了串色问题。同时也能消除或减少显示面板的边缘信号线和像素电极之间的边缘感应电荷，有效解决显示面板的边缘漏光问题。
可以理解的是，以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式，然而本公开并不局限于此。对于本领域内的普通技术人员而言，在不脱离本公开的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本公开的保护范围。

Claims (18)

  1. 一种彩膜显示层，包括衬底基板，所述衬底基板上设置有彩色树脂，所述彩色树脂之间设置有黑矩阵，所述黑矩阵的上方设置有电场屏蔽结构，所述电场屏蔽结构用于屏蔽相邻像素单元之间的干扰电场。
  2. 根据权利要求1所述的彩膜显示层，其中，所述衬底基板上设置有薄膜晶体管和数据线，所述电场屏蔽结构设置在所述黑矩阵的上方与所述数据线对应的位置。
  3. 根据权利要求1或2所述的彩膜显示层，其中，所述电场屏蔽结构包括第一隔垫物和导电层，所述导电层设置在所述第一隔垫物的表面。
  4. 根据权利要求3所述的彩膜显示层，其中，多个所述导电层彼此电联接且通过公共电极线接地。
  5. 根据权利要求3或4所述的彩膜显示层，其中，所述第一隔垫物为条状隔垫物。
  6. 根据权利要求3或4所述的彩膜显示层，其中，所述黑矩阵和所述彩色树脂上设置有保护层，所述第一隔垫物设置在所述保护层上。
  7. 根据权利要求6所述的彩膜显示层，其中，在所述保护层上设置有第二隔垫物，所述第二隔垫物为柱状隔垫物。
  8. 一种显示面板，包括权利要求1所述的彩膜显示层。
  9. 一种显示面板，包括权利要求2-7任一所述的彩膜显示层。
  10. 根据权利要求8所述的显示面板，其中，还包括阵列基板，所述阵列基板上设置有数据线，所述电场屏蔽结构设置在所述黑矩阵的上方与所述数据线对应的位置。
  11. 一种彩膜显示层的制备方法，包括：
    在衬底基板上形成黑矩阵；
    在所述衬底基板上形成彩色树脂，所述黑矩阵位于所述彩色树脂之间；
    在所述黑矩阵的上方形成电场屏蔽结构，所述电场屏蔽结构用于屏蔽相邻像素单元之间的干扰电场。
  12. 根据权利要求11所述的彩膜显示层的制备方法，其中，所述衬底基 板上形成有薄膜晶体管和数据线，所述在所述黑矩阵的上方形成电场屏蔽结构的步骤包括：
    在所述黑矩阵的上方与数据线对应的位置形成电场屏蔽结构。
  13. 根据权利要求12所述的彩膜显示层的制备方法，其中，所述在所述黑矩阵的上方与数据线对应的位置形成电场屏蔽结构的步骤包括：
    在所述黑矩阵的上方与数据线对应的位置形成第一隔垫物；
    在所述第一隔垫物的表面形成导电层。
  14. 根据权利要求13所述的彩膜显示层的制备方法，其中，所述在所述黑矩阵的上方与数据线对应的位置形成第一隔垫物的步骤之前包括：
    在所述黑矩阵和所述彩色树脂上形成保护层；
    所述在所述黑矩阵的上方与数据线对应的位置形成第一隔垫物的步骤包括：
    在所述保护层上形成第一隔垫物。
  15. 根据权利要求14所述的彩膜显示层的制备方法，其中，在所述黑矩阵的上方与数据线对应的位置形成第一隔垫物的同时，在所述保护层上形成第二隔垫物，所述第二隔垫物为柱状隔垫物。
  16. 一种显示面板的制备方法，包括权利要求11所述的彩膜显示层的制备方法的步骤。
  17. 一种显示面板的制备方法，包括权利要求12-15所述的彩膜显示层的制备方法的步骤。
  18. 根据权利要求16所述的显示面板的制备方法，其中，所述显示面板还包括阵列基板，所述阵列基板上形成有数据线，所述在所述黑矩阵的上方形成电场屏蔽结构的步骤包括：
    在所述黑矩阵的上方与所述数据线对应的位置形成电场屏蔽结构。
PCT/CN2015/087884 2015-03-09 2015-08-24 彩膜显示层、显示面板及制备方法 Ceased WO2016141684A1 (zh)

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