WO2016141682A1 - 阵列基板和显示装置 - Google Patents

阵列基板和显示装置 Download PDF

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Publication number
WO2016141682A1
WO2016141682A1 PCT/CN2015/087697 CN2015087697W WO2016141682A1 WO 2016141682 A1 WO2016141682 A1 WO 2016141682A1 CN 2015087697 W CN2015087697 W CN 2015087697W WO 2016141682 A1 WO2016141682 A1 WO 2016141682A1
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Prior art keywords
line
electrode
common electrode
storage electrode
array substrate
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PCT/CN2015/087697
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English (en)
French (fr)
Inventor
程鸿飞
先建波
徐健
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京东方科技集团股份有限公司
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Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to RU2016146518A priority Critical patent/RU2697012C2/ru
Priority to US14/907,079 priority patent/US9759972B2/en
Priority to MX2017000371A priority patent/MX360466B/es
Publication of WO2016141682A1 publication Critical patent/WO2016141682A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133345—Insulating layers
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/136213—Storage capacitors associated with the pixel electrode
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    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate and a display device.
  • liquid crystal display technology has been widely used by people, playing a vital role in industrial production and people's lives.
  • the liquid crystal display mode can be divided into a TN (twisted nematic) mode, a VA (vertical aligned) mode, and a horizontal electric field mode.
  • the horizontal electric field mode includes an in-plane switching (IPS) mode and a Fringe field switching (FFS) mode.
  • IPS in-plane switching
  • FFS Fringe field switching
  • the FFS mode liquid crystal display device is widely used due to its wide viewing angle and high transmittance.
  • the liquid crystal display panel includes an array substrate and a color filter substrate.
  • the array substrate includes a plurality of gate lines, a plurality of data lines, and a plurality of pixel units, the gate lines and the data lines vertically intersect, and adjacent gate lines and adjacent ones
  • the data line defines a pixel unit
  • the pixel unit includes a thin film transistor, a pixel electrode, and a common electrode, wherein the common electrode is located above the pixel electrode, a slit is formed on the common electrode, and an insulating layer is disposed between the pixel electrode and the common electrode, and the data line signal is
  • the voltage is written to the pixel electrode through the thin film transistor, and the entire common electrode covers all the pixel units, and is connected to the common electrode line in the non-display area.
  • the common electrode and the data line or the gate line overlap at least partially.
  • the thickness of the insulating layer between the common electrode and the data line or the gate line is correspondingly increased. Large, this also reduces the storage capacitance formed between the pixel electrode and the common electrode, which causes the voltage of the pixel electrode to change within a display time of one frame, affecting the display effect of the image.
  • the present invention is directed to the above technical problems existing in the prior art, and provides an array substrate and a display device.
  • a storage capacitor can be formed between the storage electrode line and the pixel electrode in the array substrate, and the storage capacitor can compensate a storage capacitor formed between the common electrode and the pixel electrode, thereby avoiding an increase in thickness of the first insulating layer.
  • the storage capacitance between the common electrode and the pixel electrode is lowered, thereby increasing the ability of the pixel electrode to hold a charge, so that the pixel electrode is electrically Pressing does not change during the display time of one frame, ensuring the display of the picture.
  • the present invention provides an array substrate including a common electrode line, a plurality of gate lines arranged in a cross, and a plurality of data lines, pixel units defined by adjacent ones of the gate lines and adjacent data lines, the pixels
  • the unit includes a pixel electrode and a common electrode, a first insulating layer is disposed between the pixel electrode and the common electrode, and the pixel unit further includes a storage electrode line, the storage electrode line at least partially overlapping the pixel electrode, A second insulating layer is disposed between the storage electrode line and the pixel electrode, and the storage electrode line and the common electrode are respectively connected to the common electrode line.
  • an additional storage capacitor is formed between the storage electrode line and the pixel electrode.
  • the additional storage capacitor can compensate for the storage capacitance between the pixel electrode and the common electrode, and thus the storage capacitance reduction due to the increase in the thickness of the first insulating layer between the pixel electrode and the common electrode can be avoided.
  • the storage electrode line at least partially overlaps the pixel electrode means that the projection of the storage electrode line and the pixel electrode in a direction perpendicular to the array substrate at least partially overlaps.
  • a non-display area of the array substrate is provided with a preset area, a storage electrode pad is disposed in the preset area, and the storage electrode line is connected to the storage electrode pad, and the common electrode line
  • the common electrode and the storage electrode pad are respectively connected to the predetermined region. Since the storage electrode line and the common electrode line are both connected to the storage electrode pad, the storage electrode line increases the effective area of the plate serving as the storage capacitor of the common electrode line, thereby increasing the storage capacitance between the pixel electrode and the common electrode . Since the storage electrode pad is disposed in a predetermined area in the non-display area, this scheme does not affect the display area of the array plate.
  • the array substrate may include a display area and a non-display area.
  • the distribution area of the pixel unit may be a display area, and the area other than the distribution area of the pixel unit may be a non-display area.
  • the common electrode, the storage electrode line, the first insulating layer, and the second insulating layer respectively extend to the non-display area of the array substrate.
  • the common electrode line and the data line are made of the same material and disposed in the same layer as the data line, and the storage electrode line and the storage electrode pad are made of the same material as the gate line. And is disposed in the same layer as the gate line.
  • the materials of the common electrode lines and the data lines are the same and arranged in the same layer, and the materials of the storage electrode lines, the storage electrode pads, and the gate lines are the same and arranged in the same layer. Therefore, the common electrode line and the data line can be formed by the same patterning process, and the storage electrode line, the storage electrode pad, and the gate line can be formed by the same patterning process, thereby simplifying the fabrication process and reducing the cost.
  • the common electrode is located above the pixel electrode, the common electrode line, the data line and the pixel electrode are located on the second insulating layer, and the gate line is located at the Below the pixel electrode.
  • the first insulating layer is provided with a first via hole in a region corresponding to the predetermined region, and the common electrode is connected to the common electrode line through the first via hole; the second insulating layer A second via hole is opened in a region corresponding to the preset region, and the common electrode line is connected to the storage electrode pad through the second via hole.
  • the storage electrode line, the storage electrode pad, and the common electrode line are made of the same material as the gate line, and are disposed in the same layer as the gate line, and the common electrode line and the The storage electrode pads are connected in one body.
  • the material of the storage electrode line, the storage electrode pad, the common electrode line, and the gate line are the same and arranged in the same layer. Therefore, the storage electrode line, the storage electrode pad, the common electrode line, and the gate line can be formed by the same patterning process, thereby simplifying the fabrication process and reducing the cost.
  • the common electrode is located above the pixel electrode, and the gate line is located below the pixel electrode.
  • the first insulating layer and the second insulating layer are provided with a third via hole in a region corresponding to the predetermined region, and the common electrode passes through the third via hole and the storage electrode pad connection.
  • the storage electrode line includes a plurality of strips, and the plurality of storage electrode lines are all parallel to an extending direction of the gate line; each of the storage electrode lines corresponds to one row of the pixel electrodes.
  • the preset area includes a plurality, and correspondingly, the storage electrode pad also includes a plurality, and each of the storage electrode pads is correspondingly connected to one of the storage electrode lines;
  • the common electrode line includes a plurality of strips, each of the common electrode lines corresponding to at least one of the storage electrode pads of the predetermined area, and the predetermined area and the connection of the storage electrode pads The common electrode connection.
  • the preset area includes a plurality, and correspondingly, the storage electrode pad also includes a plurality, and each of the storage electrode pads is correspondingly connected to one of the storage electrode lines;
  • the common electrode line is one, and the common electrode line is connected to the storage electrode pad of each of the predetermined regions, and is connected to the common electrode in each of the preset regions.
  • each of the predetermined regions is located between extension lines of two adjacent ones of the gate lines, and each of the predetermined regions corresponds to one row of the pixel electrodes; each of the common electrode lines The extending directions are all parallel to the extending direction of the gate lines.
  • each of the predetermined regions is located between extension lines of two adjacent ones of the gate lines, and each of the predetermined regions corresponds to one row of the pixel electrodes; and the extension of the common electrode lines The direction is parallel to the extending direction of the data line.
  • the common electrode located in the opposite upper layer is provided with a slit in a region corresponding to the pixel electrode located in the opposite lower layer.
  • a region in which the common electrode corresponds to the pixel electrode means a mutually corresponding region of projection of the common electrode and the pixel electrode in a direction perpendicular to the array substrate.
  • the first insulating layer has a thickness ranging from 1-3 ⁇ m.
  • the invention also provides a display device comprising the above array substrate.
  • the array substrate provided by the present invention can form a storage capacitor line and at least partially overlap the storage electrode line and the pixel electrode, so that a storage capacitor can be formed between the storage electrode line and the pixel electrode, and the storage capacitor can
  • the storage capacitor formed between the common electrode and the pixel electrode is compensated, so that the storage capacitance reduction between the common electrode and the pixel electrode due to the increase in the thickness of the first insulating layer can be avoided, thereby increasing the pixel electrode to maintain the charge.
  • the ability to make the voltage of the pixel electrode does not change within the display time of one frame, ensuring the display effect of the picture.
  • the display device provided by the present invention improves the picture display quality of the display device by using the above array substrate.
  • FIG. 1 is a schematic structural view of an array substrate according to Embodiment 1 of the present invention.
  • Figure 2 is a partial cross-sectional view of the array substrate of Figure 1 taken along line A1A2;
  • Figure 3 is a partial cross-sectional view of the array substrate of Figure 1 taken along line B1B2;
  • FIG. 4 is a schematic structural view of an array substrate according to Embodiment 2 of the present invention.
  • FIG. 5 is a partial cross-sectional view of the array substrate of FIG. 4 taken along line B1B2.
  • the embodiment provides an array substrate, as shown in FIG. 1 , FIG. 2 and FIG. 3 , including a common electrode line 6 , a plurality of gate lines 1 and a plurality of data lines 2 arranged in a cross, and adjacent gate lines 1 and
  • the adjacent data line 2 defines a pixel unit 3.
  • the pixel unit 3 includes a pixel electrode 31 and a common electrode 32, and a first insulating layer 4 is disposed between the pixel electrode 31 and the common electrode 32.
  • the pixel unit 3 further includes a storage electrode line 33 that at least partially overlaps the pixel electrode 31.
  • a second insulating layer 5 is disposed between the storage electrode line 33 and the pixel electrode 31, and the storage electrode line 33 and the common electrode 32 are connected to the common electrode line 6, respectively.
  • the array substrate is provided with the storage electrode line 33, and the storage electrode line 33 and the pixel electrode 31 are at least partially overlapped, so that a storage capacitor can be formed between the storage electrode line 33 and the pixel electrode 31.
  • the storage capacitor can compensate for the storage capacitance formed between the common electrode 32 and the pixel electrode 31, so that the storage capacitance reduction between the common electrode 32 and the pixel electrode 31 due to the increase in the thickness of the first insulating layer 4 can be avoided. Further, the ability of the pixel electrode 31 to hold the electric charge can be increased, so that the voltage of the pixel electrode 31 does not change during the display time of one frame of the screen, and the display effect of the screen is ensured.
  • the distribution area of the pixel unit 3 is the display area 7, and the area other than the distribution area of the pixel unit 3 is the non-display area 8; the common electrode 32, the storage electrode line 33, the first insulating layer 4, and the second insulating layer 5 also extends to the non-display area 8, respectively.
  • the non-display area 8 is provided with a preset area 81 in which the storage electrode pad 9 is disposed, the storage electrode line 33 is connected to the storage electrode pad 9, and the common electrode line 6 is respectively in the preset area 81 and the common electrode 32 is connected to the storage electrode pad 9, as shown in FIG. That is, the common electrode 32 and the storage electrode line 33 are both connected to the storage electrode pad 9.
  • the common electrode 32 and the storage electrode line 33 are both connected to the storage electrode pad 9.
  • the common electrode 32 is located above the pixel electrode 31, the common electrode line 6 and the data line 2 are made of the same material, and are disposed in the same layer as the data line 2, and the common electrode line 6, the data line 2, and the pixel electrode 31 are located.
  • the gate line 1 is located below the pixel electrode 31, and the storage electrode line 33 and the storage electrode pad 9 are made of the same material as the gate line 1, and are disposed in the same layer as the gate line 1.
  • the pixel unit 3 further includes a thin film transistor 34, and the thin film transistor 34
  • the source, the drain, the active region and the gate are included, the active region is located on the second insulating layer 5, the gate is disposed in the same layer as the gate line 1, and the source is connected to the data line 2, and the drain and the pixel electrode 31 are connected. Connected, the gate is connected to the gate line 1.
  • the first insulating layer 4 is provided with a first via hole 10 in a region corresponding to the preset region 81, and the common electrode 32 is connected to the common electrode line 6 through the first via hole 10; the second insulating layer 5 corresponds to A second via hole 11 is opened in a region of the preset region 81, and the common electrode line 6 is connected to the storage electrode pad 9 through the second via hole 11.
  • the common electrode 32 and the storage electrode line 33 can be connected to the common electrode line 6, respectively.
  • the data line 2 may also be disposed between the common electrode 32 and the pixel electrode 31.
  • the first insulating layer 4 includes an insulating layer between the data line 2 and the pixel electrode 31, and the data line 2 and the common electrode.
  • the insulation layer between 32, the other structure is the same as above.
  • the storage electrode line 33 includes a plurality of, and the plurality of storage electrode lines 33 are parallel to the extending direction of the gate line 1; each of the storage electrode lines 33 corresponds to one row of the pixel electrodes 31, that is, each of the storage electrode lines 33 is Each of the pixel electrodes 31 in the corresponding row of pixel electrodes 31 at least partially overlaps.
  • the preset area 81 includes a plurality of, and correspondingly, the storage electrode pad 9 also includes a plurality of storage electrode pads 9 correspondingly connected to one storage electrode line 33; the common electrode line 6 is one, and the common electrode The wire 6 is connected to the storage electrode pad 9 of each of the preset regions 81, and is connected to the common electrode 32 at each of the preset regions 81.
  • each of the preset regions 81 is located between the extension lines of the adjacent two gate lines 1, and each of the preset regions 81 corresponds to one row of pixel electrodes 31; the extending direction of the common electrode lines 6 and the data lines The extension direction of 2 is parallel.
  • the common electrode 32 located in the upper layer is provided with a slit 321 in a region corresponding to the pixel electrode 31 located in the opposite lower layer. In this way, a fringe electric field can be formed between the common electrode 32 and the pixel electrode 31, thereby enabling the array substrate to implement the fringe field switching mode.
  • the thickness of the first insulating layer 4 ranges from 1-3 ⁇ m. That is, the arrangement of the storage electrode lines 33 can ensure that the charge holding ability of the pixel electrodes 31 is kept constant within the above-described thickness range of the first insulating layer 4, thereby ensuring the display effect of each frame of the screen.
  • the method for preparing the array substrate in this embodiment may include the following steps S1-S7.
  • Step S1 a metal layer is sputter deposited on the substrate 13, coated with a photoresist, exposed, developed, and etched to form a pattern of the gate line 1, the gate electrode, the storage electrode line 33, and the storage electrode pad 9.
  • the metal layer is made of a metal material such as aluminum Al, copper Cu, molybdenum Mo, titanium Ti, chromium Cr or tungsten W or an alloy material of these metal materials.
  • the gate line may be a single layer structure or a multilayer structure such as Mo ⁇ Al ⁇ Mo, Ti ⁇ Cu ⁇ Ti, Mo ⁇ Ti ⁇ Cu.
  • Step S2 chemically vapor depositing the second insulating layer 5 on the substrate 13 on which the step S1 is completed; coating the photoresist, exposing, developing, etching, forming the second via hole 11, partially exposing the storage electrode pad 9.
  • the second insulating layer 5 is made of silicon nitride or silicon oxide; the second insulating layer 5 may also have a multilayer structure such as silicon oxide ⁇ silicon nitride.
  • Step S3 sputtering a transparent conductive material layer on the substrate 13 of the step S2, coating the photoresist, exposing, developing, and etching to form a pattern of the pixel electrode 31.
  • the transparent conductive material is, for example, indium tin oxide ITO, indium zinc oxide IZO or other transparent metal oxide material.
  • Step S4 depositing a semiconductor layer on the substrate 13 of the step S3, coating the photoresist, exposing, developing, and etching to form a pattern of the active layer.
  • the semiconductor layer may be made of amorphous silicon, polycrystalline silicon, microcrystalline silicon or an oxide semiconductor material, such as continuous deposition of a-Si and n+a-Si by plasma enhanced chemical vapor deposition, or by sputtering deposition.
  • the method deposits indium gallium zinc oxide IGZO.
  • Step S5 depositing a metal layer on the substrate 13 of the step S4, applying a photoresist, exposing, developing, etching, forming a pattern of the data line 2, the source, the drain, and the common electrode line 6; It is overlapped with the pixel electrode 31.
  • the metal layer is made of a metal material such as aluminum Al, copper Cu, molybdenum Mo, titanium Ti, chromium Cr or tungsten W or an alloy material of these metal materials.
  • Step S6 depositing a first insulating layer 4 on the substrate 13 which is completed in step S5, coating a photoresist, exposing, developing, etching, forming a first via hole 10, partially exposing the common electrode line 6.
  • the first insulating layer 4 is made of an inorganic insulating material such as silicon nitride or an organic insulating material. Such as organic resin materials.
  • Step S7 a transparent conductive material layer is sputter deposited on the substrate 13 of the step S6, coated with a photoresist, exposed, developed, and etched to form a pattern of the common electrode 32.
  • a transparent conductive material such as indium tin oxide ITO, indium zinc oxide IZO or other transparent metal oxide material.
  • the present embodiment provides an array substrate. Unlike the first embodiment, as shown in FIG. 4 and FIG. 5, the common electrode 32 is located above the pixel electrode 31, the gate line 1 is located below the pixel electrode 31, and the storage electrode line 33 is provided.
  • the storage electrode pad 9 and the common electrode line 6 are made of the same material as the gate line 1 and are disposed in the same layer as the gate line 1, and the common electrode line 6 is integrally connected with the storage electrode pad 9.
  • the first insulating layer 4 and the second insulating layer 5 are provided with a third via hole 12 in a region corresponding to the predetermined region 81, and the common electrode 32 is connected to the storage electrode pad 9 through the third via hole 12.
  • the common electrode 32 and the storage electrode line 33 can be respectively connected to the common electrode line 6, thereby ensuring that the common electrode line 6 can input the same common voltage to the common electrode 32 and the storage electrode line 33 at the time of display.
  • the preset area 81 includes a plurality of, and correspondingly, the storage electrode pad 9 also includes a plurality of storage electrode pads 9 correspondingly connected to one storage electrode line 33;
  • the common electrode line 6 includes a plurality of The strip common electrode line 6 corresponds at least to the storage electrode pad 9 to which a predetermined area 81 is connected, and is connected to the common electrode 32 at a predetermined area 81 to which the storage electrode pad 9 is connected.
  • each of the preset regions 81 is located between the extension lines of the adjacent two gate lines 1 , and each of the preset regions 81 corresponds to one row of pixel electrodes 31; the extension direction of each common electrode line 6 is It is parallel to the extending direction of the gate line 1.
  • the common electrode line 6 is prepared while preparing the gate line 1, the gate electrode, the storage electrode line 33, and the storage electrode pad 9.
  • a third via 12 is formed, the third via passing through the first insulating layer 4 and the second insulating layer 5, partially exposing the storage electrode pad 9.
  • Embodiments 1 and 2 The array substrate provided in Embodiments 1 and 2 is passed The storage electrode line is disposed, and the storage electrode line and the pixel electrode are at least partially overlapped, so that a storage capacitor can be formed between the storage electrode line and the pixel electrode, and the storage capacitor can compensate a storage capacitor formed between the common electrode and the pixel electrode. Therefore, it is possible to avoid a decrease in the storage capacitance between the common electrode and the pixel electrode due to an increase in the thickness of the first insulating layer, thereby increasing the ability of the pixel electrode to hold a charge, so that the voltage of the pixel electrode is within a display time of one frame. There will be no changes, which will ensure the display of the picture.
  • This embodiment provides a display device including the array substrate in Embodiment 1 or 2.
  • the picture display quality of the display device is improved.

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Abstract

一种阵列基板和显示装置。该阵列基板包括公共电极线（6）、交叉设置的多条栅线（1）、多条数据线（2）以及像素单元（3），像素单元（3）包括之间设有第一绝缘层（4）的像素电极（31）和公共电极（32），还包括与像素电极（31）至少部分重叠的存储电极线（33），存储电极线（33）与像素电极（31）之间设有第二绝缘层（5），存储电极线（33）和公共电极（32）分别与公共电极线（6）连接，存储电极线（33）与像素电极（31）之间形成的存储电容能够对公共电极（32）与像素电极（31）之间形成的存储电容进行补偿。

Description

阵列基板和显示装置 技术领域
本发明涉及显示技术领域，具体地涉及一种阵列基板和显示装置。
背景技术
随着显示技术的发展和社会的进步，液晶显示技术已经越来越广泛的被人们所应用，在工业生产、人民生活中起着至关重要的作用。
液晶显示模式可以分成TN(twisted nematic，扭曲向列)模式，VA(vertical aligned，垂直取向)模式，水平电场(horizontal electrical field)模式。水平电场模式包括，面内开关(IPS，in-plane switching)模式和边缘场开关(FFS，Fringe field switching)模式。FFS模式液晶显示装置由于视角宽且透过率高而得到广泛应用。
对于FFS模式，液晶显示面板包括阵列基板和彩膜基板，阵列基板包括多条栅线、多条数据线和多个像素单元，栅线与数据线垂直交叉，相邻的栅线与相邻的数据线限定像素单元，像素单元包括薄膜晶体管、像素电极、公共电极，其中公共电极位于像素电极的上方，公共电极上形成有狭缝，像素电极和公共电极之间设置有绝缘层，数据线信号电压通过薄膜晶体管写入像素电极，整块公共电极覆盖所有的像素单元，并在非显示区域与公共电极线连接。
公共电极与数据线或栅线至少局部会有所重叠，为了减小数据线或栅线与公共电极之间的寄生电容，公共电极与数据线或栅线之间的绝缘层的厚度会相应增大，这样也同时降低了像素电极和公共电极之间形成的储存电容，会造成像素电极的电压在一帧的显示时间内出现变化，影响图像的显示效果。
发明内容
本发明针对现有技术中存在的上述技术问题，提供一种阵列基板和显示装置。该阵列基板中存储电极线与像素电极之间能形成存储电容，该存储电容能够对公共电极与像素电极之间形成的存储电容进行补偿，从而能够避免由于第一绝缘层的厚度增大所导致的公共电极与像素电极之间的存储电容降低，进而能够增加像素电极保持电荷的能力，使像素电极的电 压在一帧画面的显示时间内不会出现变化，保证了画面的显示效果。
本发明提供一种阵列基板，包括公共电极线、交叉设置的多条栅线和多条数据线，由相邻的所述栅线和相邻的所述数据线限定的像素单元，所述像素单元包括像素电极和公共电极，所述像素电极和所述公共电极之间设置有第一绝缘层，所述像素单元还包括存储电极线，所述存储电极线与所述像素电极至少部分重叠，所述存储电极线与所述像素电极之间设置有第二绝缘层，所述存储电极线和所述公共电极分别与所述公共电极线连接。由于存储电极线与像素电极至少部分重叠并且由第二液晶层隔开，存储电极线与像素电极之间形成附加存储电容。该附加存储电容可以补偿像素电极与公共电极之间的存储电容，因此可以避免由于像素电极与公共电极之间的第一绝缘层厚度增大所导致的存储电容降低。
上述表述″存储电极线与像素电极至少部分重叠″是指存储电极线与像素电极在垂直于阵列基板的方向上的投影至少部分重叠。
优选地，在所述阵列基板的非显示区设置有预设区域，所述预设区域内设置有存储电极衬垫，所述存储电极线与所述存储电极衬垫连接，所述公共电极线在所述预设区域分别与所述公共电极和所述存储电极衬垫连接。由于存储电极线和公共电极线均连接到存储电极衬垫，该存储电极线增大了公共电极线充当存储电容的极板的有效面积，从而增大了像素电极与公共电极之间的存储电容。由于存储电极衬垫布置在非显示区中的预设区域，该方案不会影响阵列极板的显示区。
阵列基板可以包括显示区和非显示区。例如，像素单元的分布区域可以为显示区，像素单元的分布区域以外的区域可以为非显示区。公共电极、存储电极线、第一绝缘层和第二绝缘层分别延伸至阵列基板的非显示区。
优选地，所述公共电极线与所述数据线采用相同的材料，并与所述数据线同层设置，并且所述存储电极线和所述存储电极衬垫与所述栅线采用相同的材料，并与所述栅线同层设置。根据该方案，公共电极线和数据线的材料相同并且同层布置，并且存储电极线、存储电极衬垫和栅线的材料相同并且同层布置。因此，公共电极线和数据线可以由同一构图工艺形成，并且存储电极线、存储电极衬垫和栅线可以由同一构图工艺形成，由此简化制作工艺，降低成本。
优选地，所述公共电极位于所述像素电极的上方，所述公共电极线、所述数据线和所述像素电极位于所述第二绝缘层上，并且所述栅线位于所 述像素电极的下方。
优选地，所述第一绝缘层在对应所述预设区域的区域开设有第一过孔，所述公共电极通过所述第一过孔与所述公共电极线连接；所述第二绝缘层在对应所述预设区域的区域开设有第二过孔，所述公共电极线通过所述第二过孔与所述存储电极衬垫连接。
优选地，所述存储电极线、所述存储电极衬垫和所述公共电极线与所述栅线采用相同的材料，并与所述栅线同层设置，并且所述公共电极线与所述存储电极衬垫连接为一体。根据该方案，存储电极线、存储电极衬垫、公共电极线和栅线的材料相同并且同层布置。因此，存储电极线、存储电极衬垫、公共电极线和栅线可以由同一构图工艺形成，由此简化制作工艺，降低成本。
优选地，所述公共电极位于所述像素电极的上方，并且所述栅线位于所述像素电极的下方。
优选地，所述第一绝缘层和所述第二绝缘层在对应所述预设区域的区域开设有第三过孔，所述公共电极通过所述第三过孔与所述存储电极衬垫连接。
优选地，所述存储电极线包括多条，多条所述存储电极线均与所述栅线的延伸方向平行；每条所述存储电极线对应一行所述像素电极。
优选地，所述预设区域包括多个，相应地，所述存储电极衬垫也包括多个，每个所述存储电极衬垫对应连接一条所述存储电极线；
所述公共电极线包括多条，每条所述公共电极线至少对应连接一个所述预设区域的所述存储电极衬垫，并在连接所述存储电极衬垫的所述预设区域与所述公共电极连接。
优选地，所述预设区域包括多个，相应地，所述存储电极衬垫也包括多个，每个所述存储电极衬垫对应连接一条所述存储电极线；
所述公共电极线为一条，所述公共电极线连接每一个所述预设区域的所述存储电极衬垫，并在每一个所述预设区域与所述公共电极连接。
优选地，每个所述预设区域均位于相邻的两条所述栅线的延长线之间，且每个所述预设区域对应一行所述像素电极；每条所述公共电极线的延伸方向均与所述栅线的延伸方向平行。
优选地，每个所述预设区域均位于相邻的两条所述栅线的延长线之间，且每个所述预设区域对应一行所述像素电极；所述公共电极线的延伸 方向与所述数据线的延伸方向平行。
优选地，位于相对上层的所述公共电极在与位于相对下层的所述像素电极相对应的区域设置有狭缝。
上述表述″公共电极与像素电极相对应的区域″是指公共电极与像素电极在垂直于阵列基板的方向上的投影的相互对应区域。
优选地，所述第一绝缘层的厚度范围为1-3μm。
本发明还提供一种显示装置，包括上述阵列基板。
本发明的有益效果：本发明所提供的阵列基板，通过设置存储电极线，并使存储电极线与像素电极至少部分重叠，使存储电极线与像素电极之间能形成存储电容，该存储电容能够对公共电极与像素电极之间形成的存储电容进行补偿，从而能够避免由于第一绝缘层的厚度增大所导致的公共电极与像素电极之间的存储电容降低，进而能够增加像素电极保持电荷的能力，使像素电极的电压在一帧画面的显示时间内不会出现变化，保证了画面的显示效果。
本发明所提供的显示装置，通过采用上述阵列基板，提升了该显示装置的画面显示质量。
附图说明
图1为本发明实施例1中阵列基板的结构示意图；
图2为图1中的阵列基板沿A1A2剖切线的局部结构剖视图；
图3为图1中的阵列基板沿B1B2剖切线的局部结构剖视图；
图4为本发明实施例2中阵列基板的结构示意图；
图5为图4中的阵列基板沿B1B2剖切线的局部结构剖视图。
其中的附图标记说明：
1.栅线；2.数据线；3.像素单元；31.像素电极；32.公共电极；321.狭缝；33.存储电极线；34.薄膜晶体管；4.第一绝缘层；5.第二绝缘层；6.公共电极线；7.显示区；8.非显示区；81.预设区域；9.存储电极衬垫；10.第一过孔；11.第二过孔；12.第三过孔；13.基板。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明所提供的一种阵列基板和显示装置作进一步详 细描述。
实施例1：
本实施例提供一种阵列基板，如图1、图2和图3所示，包括公共电极线6、交叉设置的多条栅线1和多条数据线2，由相邻的栅线1和相邻的数据线2限定的像素单元3。像素单元3包括像素电极31和公共电极32，并且像素电极31和公共电极32之间设置有第一绝缘层4。像素单元3还包括存储电极线33，存储电极线33与像素电极31至少部分重叠。存储电极线33与像素电极31之间设置有第二绝缘层5，存储电极线33和公共电极32分别与公共电极线6连接。
该阵列基板通过设置存储电极线33，并使存储电极线33与像素电极31至少部分重叠，使存储电极线33与像素电极31之间能形成存储电容。该存储电容能够对公共电极32与像素电极31之间形成的存储电容进行补偿，从而能够避免由于第一绝缘层4的厚度增大所导致的公共电极32与像素电极3l之间的存储电容降低，进而能够增加像素电极31保持电荷的能力，使像素电极31的电压在一帧画面的显示时间内不会出现变化，保证了画面的显示效果。
本实施例中，像素单元3的分布区域为显示区7，像素单元3的分布区域以外的区域为非显示区8；公共电极32、存储电极线33、第一绝缘层4和第二绝缘层5还分别延伸至非显示区8。
在非显示区8设置有预设区域81，预设区域81内设置有存储电极衬垫9，存储电极线33与存储电极衬垫9连接，公共电极线6在预设区域81分别与公共电极32和存储电极衬垫9连接，如图3所示。也就是说，公共电极32和存储电极线33均连接到存储电极衬垫9。如此设置，能够确保显示时，公共电极32和存储电极线33上能够输入完全相同的公共电压信号，从而使存储电极线33与像素电极31之间形成的存储电容能够对公共电极32与像素电极31之间形成的存储电容进行补偿，进而确保像素电极31与公共电极32之间的存储电容不会降低。
本实施例中，公共电极32位于像素电极31的上方，公共电极线6与数据线2采用相同的材料，并与数据线2同层设置，公共电极线6、数据线2和像素电极31位于第二绝缘层5上。栅线1位于像素电极31的下方，存储电极线33和存储电极衬垫9与栅线1采用相同的材料，并与栅线1同层设置。另外，像素单元3还包括薄膜晶体管34，薄膜晶体管34 包括源极、漏极、有源区和栅极，有源区位于第二绝缘层5上，栅极与栅线1同层设置，且源极与数据线2连接，漏极与像素电极31连接，栅极与栅线1连接。
如图3所示，第一绝缘层4在对应预设区域81的区域开设有第一过孔10，公共电极32通过第一过孔10与公共电极线6连接；第二绝缘层5在对应预设区域81的区域开设有第二过孔11，公共电极线6通过第二过孔11与存储电极衬垫9连接。如此便能实现公共电极32和存储电极线33分别与公共电极线6连接。
需要说明的是，数据线2也可以设置在公共电极32和像素电极31之间，此时，第一绝缘层4包括数据线2与像素电极31之间的绝缘层和数据线2与公共电极32之间的绝缘层，其他结构同上。
本实施例中，存储电极线33包括多条，多条存储电极线33均与栅线1的延伸方向平行；每条存储电极线33对应一行像素电极31，即每条存储电极线33均与对应一行像素电极31中的各个像素电极31至少部分重叠。如此设置，能够确保各个像素电极31与公共电极32之间的存储电容都不会降低，从而使各个像素电极31的电荷保持能力都能够保持恒定，进而确保各个像素电极3l的电压在一帧画面的显示时间内都不会出现变化。
本实施例中，预设区域81包括多个，相应地，存储电极衬垫9也包括多个，每个存储电极衬垫9对应连接一条存储电极线33；公共电极线6为一条，公共电极线6连接每一个预设区域81的存储电极衬垫9，并在每一个预设区域81与公共电极32连接。如此设置，能够确保公共电极线6向公共电极32和各个存储电极衬垫9提供的公共电压相同，从而确保显示时公共电极32和存储电极线33上的电压完全相同。
本实施例中，每个预设区域81均位于相邻的两条栅线1的延长线之间，且每个预设区域81对应一行像素电极31；公共电极线6的延伸方向与数据线2的延伸方向平行。如此设置，简化了阵列基板非显示区8的布线，能够提高阵列基板的制备良率。
本实施例中，位于相对上层的公共电极32在与位于相对下层的像素电极31相对应的区域设置有狭缝321。如此设置，使公共电极32与像素电极31之间能够形成边缘电场，从而使阵列基板能够实现边缘场开关模式。
本实施例中，第一绝缘层4的厚度范围为1-3μm。即存储电极线33的设置，能够确保在第一绝缘层4的上述厚度范围内像素电极31的电荷保持能力保持恒定不变，从而确保了每帧画面的显示效果。
本实施例中阵列基板的制备方法可以包括下述步骤S1-S7。
步骤S1：在基板13上溅射沉积金属层，涂覆光刻胶，曝光、显影、刻蚀，形成栅线1、栅极、存储电极线33、存储电极衬垫9的图形。
在该步骤中，金属层采用例如铝Al、铜Cu，钼Mo，钛Ti，铬Cr或钨W等金属材料或这些金属材料的合金材料。另外，栅线可以采用单层结构，也可以采用多层结构，如Mo\Al\Mo，Ti\Cu\Ti，Mo\Ti\Cu。
步骤S2：在完成步骤S1的基板13上化学气相沉积第二绝缘层5；涂覆光刻胶，曝光、显影、刻蚀，形成第二过孔11，部分地暴露出存储电极衬垫9。
该步骤中，第二绝缘层5采用氮化硅或氧化硅；第二绝缘层5也可以采用多层结构，例如氧化硅\氮化硅。
步骤S3：在完成步骤S2的基板13上溅射透明导电材料层，涂覆光刻胶，曝光、显影、刻蚀，形成像素电极31的图形。
该步骤中，透明导电材料例如为氧化铟锡ITO、掺铟氧化锌IZO或其他透明金属氧化物材料。
步骤S4：在完成步骤S3的基板13上沉积半导体层，涂覆光刻胶，曝光、显影、刻蚀，形成有源层的图形。
在该步骤中，半导体层可以采用非晶硅、多晶硅、微晶硅或氧化物半导体材料，如采用等离子体增强化学气相沉积法连续沉积a-Si和n+a-Si，或采用溅射沉积法沉积铟镓锌氧化物IGZO。
步骤S5：在完成步骤S4的基板13上溅射沉积金属层，涂覆光刻胶，曝光、显影、刻蚀，形成数据线2，源极、漏极、公共电极线6的图形；漏极与像素电极31搭接。
该步骤中，金属层采用如铝Al、铜Cu，钼Mo，钛Ti，铬Cr或钨W等金属材料或这些金属材料的合金材料。
步骤S6：在完成步骤S5的基板13上沉积形成第一绝缘层4，涂覆光刻胶，曝光、显影、刻蚀，形成第一过孔10，部分地暴露出公共电极线6。
该步骤中，第一绝缘层4采用无机绝缘材料如氮化硅或有机绝缘材料 如有机树脂材料。
步骤S7：在完成步骤S6的基板13上溅射沉积透明导电材料层，涂覆光刻胶，曝光、显影、刻蚀，形成公共电极32的图形。
该步骤中，透明导电材料如氧化铟锡ITO、掺铟氧化锌IZO或其他透明金属氧化物材料。
实施例2：
本实施例提供一种阵列基板，与实施例1不同的是，如图4和图5所示，公共电极32位于像素电极31的上方，栅线1位于像素电极31的下方，存储电极线33、存储电极衬垫9和公共电极线6与栅线1采用相同的材料，并与栅线1同层设置，且公共电极线6与存储电极衬垫9连接为一体。第一绝缘层4和第二绝缘层5在对应预设区域81的区域开设有第三过孔12，公共电极32通过第三过孔12与存储电极衬垫9连接。
如此设置，能使公共电极32和存储电极线33分别与公共电极线6连接，从而确保显示时公共电极线6能够向公共电极32与存储电极线33上输入相同的公共电压。
本实施例中，预设区域81包括多个，相应地，存储电极衬垫9也包括多个，每个存储电极衬垫9对应连接一条存储电极线33；公共电极线6包括多条，每条公共电极线6至少对应连接一个预设区域81的存储电极衬垫9，并在连接存储电极衬垫9的预设区域81与公共电极32连接。如此设置，能够确保公共电极线6向公共电极32和各个存储电极衬垫9提供的公共电压相同，从而确保显示时公共电极32和存储电极线33上的电压完全相同。
本实施例中，每个预设区域81均位于相邻的两条栅线1的延长线之间，且每个预设区域81对应一行像素电极31；每条公共电极线6的延伸方向均与栅线1的延伸方向平行。如此设置，简化了阵列基板非显示区8的布线，能够提高阵列基板的制备良率。
相应地，本实施例阵列基板的制备中，在制备形成栅线1、栅极、存储电极线33和存储电极衬垫9的同时，制备形成公共电极线6。在沉积第一绝缘层4后，形成第三过孔12，第三过孔穿过第一绝缘层4和第二绝缘层5，部分地暴露出存储电极衬垫9。阵列基板中各层的制备方法可参考实施例1，此处不再赘述。
实施例1和2的有益效果：实施例1和2中所提供的阵列基板，通过 设置存储电极线，并使存储电极线与像素电极至少部分重叠，使存储电极线与像素电极之间能形成存储电容，该存储电容能够对公共电极与像素电极之间形成的存储电容进行补偿，从而能够避免由于第一绝缘层的厚度增大所导致的公共电极与像素电极之间的存储电容降低，进而能够增加像素电极保持电荷的能力，使像素电极的电压在一帧画面的显示时间内不会出现变化，保证了画面的显示效果。
实施例3：
本实施例提供一种显示装置，包括实施例1或2中的阵列基板。
通过采用实施例1或2中的阵列基板，提升了该显示装置的画面显示质量。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (16)

  1. 一种阵列基板，包括公共电极线、交叉设置的多条栅线和多条数据线，由相邻的所述栅线和相邻的所述数据线限定的像素单元，所述像素单元包括像素电极和公共电极，所述像素电极和所述公共电极之间设置有第一绝缘层，其特征在于，所述像素单元还包括存储电极线，所述存储电极线与所述像素电极至少部分重叠，所述存储电极线与所述像素电极之间设置有第二绝缘层，所述存储电极线和所述公共电极分别与所述公共电极线连接。
  2. 根据权利要求1所述的阵列基板，其特征在于，在所述阵列基板的非显示区设置有预设区域，所述预设区域内设置有存储电极衬垫，所述存储电极线与所述存储电极衬垫连接，所述公共电极线在所述预设区域分别与所述公共电极和所述存储电极衬垫连接。
  3. 根据权利要求2所述的阵列基板，其特征在于，所述公共电极线与所述数据线采用相同的材料，并与所述数据线同层设置，并且所述存储电极线和所述存储电极衬垫与所述栅线采用相同的材料，并与所述栅线同层设置。
  4. 根据权利要求3所述的阵列基板，其特征在于，所述公共电极位于所述像素电极的上方，所述公共电极线、所述数据线和所述像素电极位于所述第二绝缘层上，并且所述栅线位于所述像素电极的下方。
  5. 根据权利要求3所述的阵列基板，其特征在于，所述第一绝缘层在对应所述预设区域的区域开设有第一过孔，所述公共电极通过所述第一过孔与所述公共电极线连接；所述第二绝缘层在对应所述预设区域的区域开设有第二过孔，所述公共电极线通过所述第二过孔与所述存储电极衬垫连接。
  6. 根据权利要求2所述的阵列基板，其特征在于，所述存储电极线、所述存储电极衬垫和所述公共电极线与所述栅线采用相同的材料，并与所述栅线同层设置，并且所述公共电极线与所述存储电极衬垫连接为一体。
  7. 根据权利要求6所述的阵列基板，其特征在于，所述公共电极位于所述像素电极的上方，并且所述栅线位于所述像素电极的下方。
  8. 根据权利要求6所述的阵列基板，其特征在于，所述第一绝缘层和所述第二绝缘层在对应所述预设区域的区域开设有第三过孔，所述公共 电极通过所述第三过孔与所述存储电极衬垫连接。
  9. 根据权利要求2-8任意一项所述的阵列基板，其特征在于，所述存储电极线包括多条，多条所述存储电极线均与所述栅线的延伸方向平行；每条所述存储电极线对应一行所述像素电极。
  10. 根据权利要求9所述的阵列基板，其特征在于，所述预设区域包括多个，相应地，所述存储电极衬垫也包括多个，每个所述存储电极衬垫对应连接一条所述存储电极线；
    所述公共电极线包括多条，每条所述公共电极线至少对应连接一个所述预设区域的所述存储电极衬垫，并在连接所述存储电极衬垫的所述预设区域与所述公共电极连接。
  11. 根据权利要求9所述的阵列基板，其特征在于，所述预设区域包括多个，相应地，所述存储电极衬垫也包括多个，每个所述存储电极衬垫对应连接一条所述存储电极线；
    所述公共电极线为一条，所述公共电极线连接每一个所述预设区域的所述存储电极衬垫，并在每一个所述预设区域与所述公共电极连接。
  12. 根据权利要求10所述的阵列基板，其特征在于，每个所述预设区域均位于相邻的两条所述栅线的延长线之间，且每个所述预设区域对应一行所述像素电极；每条所述公共电极线的延伸方向均与所述栅线的延伸方向平行。
  13. 根据权利要求11所述的阵列基板，其特征在于，每个所述预设区域均位于相邻的两条所述栅线的延长线之间，且每个所述预设区域对应一行所述像素电极；所述公共电极线的延伸方向与所述数据线的延伸方向平行。
  14. 根据权利要求3-8中任意一项所述的阵列基板，其特征在于，位于相对上层的所述公共电极在与位于相对下层的所述像素电极相对应的区域设置有狭缝。
  15. 根据权利要求3-8中任意一项所述的阵列基板，其特征在于，所述第一绝缘层的厚度范围为1-3μm。
  16. 一种显示装置，其特征在于，包括权利要求1-15中任意一项所述的阵列基板。
PCT/CN2015/087697 2015-03-12 2015-08-20 阵列基板和显示装置 WO2016141682A1 (zh)

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204422935U (zh) 2015-03-12 2015-06-24 京东方科技集团股份有限公司 一种阵列基板和显示装置
CN106950765A (zh) 2016-01-07 2017-07-14 中华映管股份有限公司 液晶显示面板的像素结构及其制作方法
CN106094364A (zh) * 2016-06-21 2016-11-09 上海纪显电子科技有限公司 液晶显示装置、阵列基板和阵列基板的制作方法
CN106094365A (zh) * 2016-06-21 2016-11-09 上海纪显电子科技有限公司 液晶显示装置、阵列基板及阵列基板的制作方法
CN106597764A (zh) * 2017-02-23 2017-04-26 深圳市华星光电技术有限公司 液晶面板以及液晶显示装置
US10249649B2 (en) * 2017-03-10 2019-04-02 Shenzhen China Star Optoelectronics Technology Co., Ltd. Thin film transistor array substrate and display panel
CN207424484U (zh) * 2017-11-27 2018-05-29 京东方科技集团股份有限公司 一种阵列基板及显示装置
CN208488633U (zh) 2018-05-14 2019-02-12 北京京东方技术开发有限公司 阵列基板、显示面板及显示装置
CN109659327B (zh) * 2019-02-27 2021-02-05 京东方科技集团股份有限公司 一种阵列基板、显示面板及显示装置
CN110162213B (zh) * 2019-04-25 2022-11-15 昆山龙腾光电股份有限公司 触控显示装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050053281A (ko) * 2003-12-02 2005-06-08 엘지.필립스 엘시디 주식회사 액정표시패널 및 그 구동장치
CN2757177Y (zh) * 2004-12-18 2006-02-08 鸿富锦精密工业（深圳）有限公司 液晶显示器
JP2007052418A (ja) * 2005-08-16 2007-03-01 Samsung Electronics Co Ltd 液晶表示装置
CN101382708A (zh) * 2007-09-04 2009-03-11 株式会社日立显示器 液晶显示装置
CN102088025A (zh) * 2009-12-02 2011-06-08 群康科技(深圳)有限公司 薄膜晶体管基板及其制造方法
CN103353695A (zh) * 2013-06-28 2013-10-16 北京京东方光电科技有限公司 一种阵列基板及显示装置
CN204422935U (zh) * 2015-03-12 2015-06-24 京东方科技集团股份有限公司 一种阵列基板和显示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100978260B1 (ko) * 2005-12-27 2010-08-26 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
KR20080007813A (ko) * 2006-07-18 2008-01-23 삼성전자주식회사 박막 트랜지스터 어레이 기판
TW200814325A (en) * 2006-09-05 2008-03-16 Chunghwa Picture Tubes Ltd Thim film transistor array substrate and manufacturing process therefor
CN102023430B (zh) * 2009-09-17 2012-02-29 京东方科技集团股份有限公司 Ffs型tft-lcd阵列基板及其制造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050053281A (ko) * 2003-12-02 2005-06-08 엘지.필립스 엘시디 주식회사 액정표시패널 및 그 구동장치
CN2757177Y (zh) * 2004-12-18 2006-02-08 鸿富锦精密工业（深圳）有限公司 液晶显示器
JP2007052418A (ja) * 2005-08-16 2007-03-01 Samsung Electronics Co Ltd 液晶表示装置
CN101382708A (zh) * 2007-09-04 2009-03-11 株式会社日立显示器 液晶显示装置
CN102088025A (zh) * 2009-12-02 2011-06-08 群康科技(深圳)有限公司 薄膜晶体管基板及其制造方法
CN103353695A (zh) * 2013-06-28 2013-10-16 北京京东方光电科技有限公司 一种阵列基板及显示装置
CN204422935U (zh) * 2015-03-12 2015-06-24 京东方科技集团股份有限公司 一种阵列基板和显示装置

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