RU2016146518A - Матричная подложка и устройство отображения - Google Patents

Матричная подложка и устройство отображения Download PDF

Info

Publication number
RU2016146518A
RU2016146518A RU2016146518A RU2016146518A RU2016146518A RU 2016146518 A RU2016146518 A RU 2016146518A RU 2016146518 A RU2016146518 A RU 2016146518A RU 2016146518 A RU2016146518 A RU 2016146518A RU 2016146518 A RU2016146518 A RU 2016146518A
Authority
RU
Russia
Prior art keywords
electrode
line
common electrode
matrix substrate
storage electrode
Prior art date
Application number
RU2016146518A
Other languages
English (en)
Other versions
RU2016146518A3 (ru
RU2697012C2 (ru
Inventor
Хунфэй ЧЭН
Цзяньбо СЯНЬ
Цзянь СЮЙ
Original Assignee
Боэ Текнолоджи Груп Ко., Лтд.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Боэ Текнолоджи Груп Ко., Лтд. filed Critical Боэ Текнолоджи Груп Ко., Лтд.
Publication of RU2016146518A3 publication Critical patent/RU2016146518A3/ru
Publication of RU2016146518A publication Critical patent/RU2016146518A/ru
Application granted granted Critical
Publication of RU2697012C2 publication Critical patent/RU2697012C2/ru

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Claims (18)

1. Матричная подложка, содержащая линию общего электрода, множество линий затвора и множество линий данных, которые пересекаются друг с другом, и пиксельные модули, заданные посредством соседних линий затвора и соседних линий данных, каждых из пиксельных модулей содержит пиксельный электрод и общий электрод, первый изолирующий слой размещен между пиксельным электродом и общим электродом, отличающаяся тем, что каждый из пиксельных модулей дополнительно содержит линию электрода хранения, линия электрода хранения и пиксельный электрод, по меньшей мере, частично перекрываются, второй изолирующий слой размещен между линией электрода хранения и пиксельным электродом, и линия электрода хранения и общий электрод соединены с линией общего электрода, соответственно.
2. Матричная подложка по п. 1, отличающаяся тем, что область без отображения матричной подложки содержит предварительно заданный участок, в котором размещена контактная площадка электрода хранения, линия электрода хранения соединена с контактной площадкой электрода хранения, и в предварительно заданном участке линия общего электрода соединена с общим электродом и контактной площадкой электрода хранения, соответственно.
3. Матричная подложка по п. 2, отличающаяся тем, что линия общего электрода изготовлена из того же материала, что и линии данных, и размещена в том же слое, что и линии данных, и линия электрода хранения и контактная площадка электрода хранения изготовлены из того же материала, что и линии затвора, и размещены в том же слое, что и линии затвора.
4. Матричная подложка по п. 3, отличающаяся тем, что общий электрод расположен выше пиксельного электрода, линия общего электрода, линии данных и пиксельный электрод размещены на втором изолирующем слое, и линии затвора расположены ниже пиксельного электрода.
5. Матричная подложка по п. 3, отличающаяся тем, что первое сквозное отверстие размещено в участке первого изолирующего слоя, соответствующем предварительно заданному участку, общий электрод соединен с линией общего электрода посредством первого сквозного отверстия; второе сквозное отверстие размещено в участке второго изолирующего слоя, соответствующем предварительно заданному участку, линия общего электрода соединена с контактной площадкой электрода хранения посредством второго сквозного отверстия.
6. Матричная подложка по п. 2, отличающаяся тем, что линия электрода хранения, контактная площадка электрода хранения и линии общего электрода изготовлены из того же материала, что и линии затвора, и размещены в том же слое, что и линии затвора, и линия общего электрода и контактная площадка электрода хранения образуют цельную конструкцию.
7. Матричная подложка по п. 6, отличающаяся тем, что общий электрод расположен выше пиксельного электрода, и линии затвора расположены ниже пиксельного электрода.
8. Матричная подложка по п. 6, отличающаяся тем, что третье сквозное отверстие размещено в участке первого изолирующего слоя и второго изолирующего слоя, соответствующем предварительно заданному участку, и общий электрод соединен с контактной площадкой электрода хранения посредством третьего сквозного отверстия.
9. Матричная подложка по любому из пп. 2-8, отличающаяся тем, что предусмотрено множество линий электрода хранения, которые являются параллельными с направлением прохождения линий затвора, и каждая из множества линий электрода хранения соответствует ряду пиксельных электродов.
10. Матричная подложка по п. 9, отличающаяся тем, что предусмотрено множество предварительно заданных участков и множество контактных площадок электрода хранения, и каждая из контактных площадок электрода хранения соединена с одной из линий электрода хранения;
предусмотрено множество линий общего электрода, каждая из множества линий общего электрода, по меньшей мере, соединена с контактной площадкой электрода хранения в одном из предварительно заданных участков и дополнительно соединена с общим электродом в предварительно заданном участке.
11. Матричная подложка по п. 9, отличающаяся тем, что предусмотрено множество предварительно заданных участков и множество контактных площадок электрода хранения, и каждая из контактных площадок электрода хранения соединена с одной из линий электрода хранения;
предусмотрена только одна линия общего электрода, линия общего электрода соединена с контактной площадкой электрода хранения в каждом из предварительно заданных участков и соединена с общим электродом в каждом из предварительно заданных участков.
12. Матричная подложка по п. 10, отличающаяся тем, что каждый из предварительно заданных участков расположен между линиями прохождения двух соседних линий затвора, и каждый из предварительно заданных участков соответствует ряду пиксельных электродов; направление прохождения каждой из линий общего электрода является параллельным с направлением прохождения линий затвора.
13. Матричная подложка по п. 11, отличающаяся тем, что каждый из предварительно заданных участков расположен между линиями прохождения двух соседних линий затвора, и каждый из предварительно заданных участков соответствует ряду пиксельных электродов; направление прохождения линии общего электрода является параллельным с направлением прохождения линий данных.
14. Матричная подложка по любому из пп. 3-8, отличающаяся тем, что щели размещены в общем электроде и в участке, соответствующем лежащему ниже пиксельному электроду.
15. Матричная подложка по любому из пп. 3-8, отличающаяся тем, что первый изолирующий слой имеет толщину 1-3 мкм.
16. Устройство отображения, отличающееся тем, что содержит матричную подложку по любому из пп. 1-15.
RU2016146518A 2015-03-12 2015-08-20 Матричная подложка и устройство отображения RU2697012C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201520141230.XU CN204422935U (zh) 2015-03-12 2015-03-12 一种阵列基板和显示装置
CN201520141230.X 2015-03-12
PCT/CN2015/087697 WO2016141682A1 (zh) 2015-03-12 2015-08-20 阵列基板和显示装置

Publications (3)

Publication Number Publication Date
RU2016146518A3 RU2016146518A3 (ru) 2019-04-12
RU2016146518A true RU2016146518A (ru) 2019-04-12
RU2697012C2 RU2697012C2 (ru) 2019-08-08

Family

ID=53473289

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2016146518A RU2697012C2 (ru) 2015-03-12 2015-08-20 Матричная подложка и устройство отображения

Country Status (5)

Country Link
US (1) US9759972B2 (ru)
CN (1) CN204422935U (ru)
MX (1) MX360466B (ru)
RU (1) RU2697012C2 (ru)
WO (1) WO2016141682A1 (ru)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN204422935U (zh) 2015-03-12 2015-06-24 京东方科技集团股份有限公司 一种阵列基板和显示装置
CN106950765A (zh) 2016-01-07 2017-07-14 中华映管股份有限公司 液晶显示面板的像素结构及其制作方法
CN106094364A (zh) * 2016-06-21 2016-11-09 上海纪显电子科技有限公司 液晶显示装置、阵列基板和阵列基板的制作方法
CN106094365A (zh) * 2016-06-21 2016-11-09 上海纪显电子科技有限公司 液晶显示装置、阵列基板及阵列基板的制作方法
CN106597764A (zh) * 2017-02-23 2017-04-26 深圳市华星光电技术有限公司 液晶面板以及液晶显示装置
US10249649B2 (en) * 2017-03-10 2019-04-02 Shenzhen China Star Optoelectronics Technology Co., Ltd. Thin film transistor array substrate and display panel
CN207424484U (zh) * 2017-11-27 2018-05-29 京东方科技集团股份有限公司 一种阵列基板及显示装置
CN208488633U (zh) 2018-05-14 2019-02-12 北京京东方技术开发有限公司 阵列基板、显示面板及显示装置
CN109659327B (zh) * 2019-02-27 2021-02-05 京东方科技集团股份有限公司 一种阵列基板、显示面板及显示装置
CN110162213B (zh) * 2019-04-25 2022-11-15 昆山龙腾光电股份有限公司 触控显示装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100994224B1 (ko) 2003-12-02 2010-11-12 엘지디스플레이 주식회사 액정표시패널 및 그 구동장치
CN2757177Y (zh) 2004-12-18 2006-02-08 鸿富锦精密工业（深圳）有限公司 液晶显示器
KR101171056B1 (ko) 2005-08-16 2012-08-03 삼성전자주식회사 액정 표시 장치
KR100978260B1 (ko) * 2005-12-27 2010-08-26 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
KR20080007813A (ko) * 2006-07-18 2008-01-23 삼성전자주식회사 박막 트랜지스터 어레이 기판
TW200814325A (en) * 2006-09-05 2008-03-16 Chunghwa Picture Tubes Ltd Thim film transistor array substrate and manufacturing process therefor
JP5235363B2 (ja) * 2007-09-04 2013-07-10 株式会社ジャパンディスプレイイースト 液晶表示装置
CN102023430B (zh) * 2009-09-17 2012-02-29 京东方科技集团股份有限公司 Ffs型tft-lcd阵列基板及其制造方法
CN102088025A (zh) 2009-12-02 2011-06-08 群康科技(深圳)有限公司 薄膜晶体管基板及其制造方法
CN103353695B (zh) * 2013-06-28 2015-12-09 北京京东方光电科技有限公司 一种阵列基板及显示装置
CN204422935U (zh) 2015-03-12 2015-06-24 京东方科技集团股份有限公司 一种阵列基板和显示装置

Also Published As

Publication number Publication date
MX2017000371A (es) 2017-04-27
RU2016146518A3 (ru) 2019-04-12
US20170038654A1 (en) 2017-02-09
RU2697012C2 (ru) 2019-08-08
US9759972B2 (en) 2017-09-12
WO2016141682A1 (zh) 2016-09-15
CN204422935U (zh) 2015-06-24
MX360466B (es) 2018-11-05

Similar Documents

Publication Publication Date Title
RU2016146518A (ru) Матричная подложка и устройство отображения
JP2017138635A5 (ru)
JP2017098020A5 (ru)
JP2011192982A5 (ja) 半導体メモリ装置及び半導体メモリ装置の駆動方法
JP2016206634A5 (ru)
JP2012113305A5 (ru)
JP2014075334A5 (ru)
JP2010271701A5 (ru)
JP2014095895A5 (ja) 液晶表示装置
JP2016212394A5 (ru)
JP2013178522A5 (ja) 半導体装置
JP2013211537A5 (ru)
JP2014186844A5 (ru)
GB2485865B (en) Liquid crystal display device
JP2013137484A5 (ru)
JP2010091826A5 (ru)
JP2010145996A5 (ru)
JP2012114422A5 (ja) 半導体装置
JP2014179616A5 (ru)
JP2011081386A5 (ru)
JP2012256837A5 (ja) 半導体装置
JP2017146450A5 (ru)
JP2010107595A5 (ru)
JP2017067830A5 (ru)
JP2014048339A5 (ru)