WO2016129577A1 - 半導体チップの製造方法 - Google Patents
半導体チップの製造方法 Download PDFInfo
- Publication number
- WO2016129577A1 WO2016129577A1 PCT/JP2016/053751 JP2016053751W WO2016129577A1 WO 2016129577 A1 WO2016129577 A1 WO 2016129577A1 JP 2016053751 W JP2016053751 W JP 2016053751W WO 2016129577 A1 WO2016129577 A1 WO 2016129577A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sensitive adhesive
- semiconductor chip
- pressure
- adhesive layer
- wafer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000012790 adhesive layer Substances 0.000 claims abstract description 16
- 238000004132 cross linking Methods 0.000 claims abstract description 15
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 121
- 239000010410 layer Substances 0.000 claims description 62
- 239000003795 chemical substances by application Substances 0.000 claims description 27
- 230000000638 stimulation Effects 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 11
- 238000003860 storage Methods 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 5
- 239000002390 adhesive tape Substances 0.000 claims description 2
- 230000004936 stimulating effect Effects 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 abstract description 30
- 230000001070 adhesive effect Effects 0.000 abstract description 30
- 239000003960 organic solvent Substances 0.000 abstract description 15
- 238000006073 displacement reaction Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 42
- 125000000524 functional group Chemical group 0.000 description 39
- -1 acetophenone derivative compounds Chemical class 0.000 description 35
- 229920001296 polysiloxane Polymers 0.000 description 31
- 150000001875 compounds Chemical class 0.000 description 24
- 239000000178 monomer Substances 0.000 description 24
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 21
- 229920000058 polyacrylate Polymers 0.000 description 13
- 150000003839 salts Chemical class 0.000 description 13
- 229940126062 Compound A Drugs 0.000 description 12
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 12
- 239000000243 solution Substances 0.000 description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910021485 fumed silica Inorganic materials 0.000 description 9
- 239000003504 photosensitizing agent Substances 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 150000007514 bases Chemical class 0.000 description 6
- 125000005265 dialkylamine group Chemical group 0.000 description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 6
- 239000003999 initiator Substances 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 125000000962 organic group Chemical group 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 125000003700 epoxy group Chemical group 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Chemical compound C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 0 Cc1nnn[n]1* Chemical compound Cc1nnn[n]1* 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- CCVYRRGZDBSHFU-UHFFFAOYSA-N (2-hydroxyphenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC=C1O CCVYRRGZDBSHFU-UHFFFAOYSA-N 0.000 description 2
- 229920002818 (Hydroxyethyl)methacrylate Polymers 0.000 description 2
- FYRCDEARNUVZRG-UHFFFAOYSA-N 1,1,5-trimethyl-3,3-bis(2-methylpentan-2-ylperoxy)cyclohexane Chemical compound CCCC(C)(C)OOC1(OOC(C)(C)CCC)CC(C)CC(C)(C)C1 FYRCDEARNUVZRG-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 125000004386 diacrylate group Chemical group 0.000 description 2
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 2
- WUAXWQRULBZETB-UHFFFAOYSA-N homoveratric acid Chemical compound COC1=CC=C(CC(O)=O)C=C1OC WUAXWQRULBZETB-UHFFFAOYSA-N 0.000 description 2
- 150000002429 hydrazines Chemical class 0.000 description 2
- 150000002430 hydrocarbons Chemical group 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 150000003003 phosphines Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 150000003141 primary amines Chemical class 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 125000000467 secondary amino group Chemical class [H]N([*:1])[*:2] 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- WMUZDBZPDLHUMW-UHFFFAOYSA-N (2-nitrophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC=C1[N+]([O-])=O WMUZDBZPDLHUMW-UHFFFAOYSA-N 0.000 description 1
- ZAMZCSIXTWIEDY-UHFFFAOYSA-N (2-propylphenyl)methanol Chemical compound CCCC1=CC=CC=C1CO ZAMZCSIXTWIEDY-UHFFFAOYSA-N 0.000 description 1
- QBYIENPQHBMVBV-HFEGYEGKSA-N (2R)-2-hydroxy-2-phenylacetic acid Chemical compound O[C@@H](C(O)=O)c1ccccc1.O[C@@H](C(O)=O)c1ccccc1 QBYIENPQHBMVBV-HFEGYEGKSA-N 0.000 description 1
- BWZAUXRKSMJLMH-UHFFFAOYSA-N 1,1-diethoxyethylbenzene Chemical compound CCOC(C)(OCC)C1=CC=CC=C1 BWZAUXRKSMJLMH-UHFFFAOYSA-N 0.000 description 1
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 1
- GJZFGDYLJLCGHT-UHFFFAOYSA-N 1,2-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(CC)C(CC)=CC=C3SC2=C1 GJZFGDYLJLCGHT-UHFFFAOYSA-N 0.000 description 1
- UYEDESPZQLZMCL-UHFFFAOYSA-N 1,2-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=C(C)C(C)=CC=C3SC2=C1 UYEDESPZQLZMCL-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- ZWXDAANEJMSCEX-UHFFFAOYSA-N 1-(3-anilinophenyl)ethanone Chemical compound CC(=O)C1=CC=CC(NC=2C=CC=CC=2)=C1 ZWXDAANEJMSCEX-UHFFFAOYSA-N 0.000 description 1
- ODDAWJGQWOGBCX-UHFFFAOYSA-N 1-[2-(dimethylazaniumyl)ethyl]tetrazole-5-thiolate Chemical compound CN(C)CCN1N=NN=C1S ODDAWJGQWOGBCX-UHFFFAOYSA-N 0.000 description 1
- YNSNJGRCQCDRDM-UHFFFAOYSA-N 1-chlorothioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl YNSNJGRCQCDRDM-UHFFFAOYSA-N 0.000 description 1
- VBSTXRUAXCTZBQ-UHFFFAOYSA-N 1-hexyl-4-phenylpiperazine Chemical compound C1CN(CCCCCC)CCN1C1=CC=CC=C1 VBSTXRUAXCTZBQ-UHFFFAOYSA-N 0.000 description 1
- XOHZHMUQBFJTNH-UHFFFAOYSA-N 1-methyl-2h-tetrazole-5-thione Chemical compound CN1N=NN=C1S XOHZHMUQBFJTNH-UHFFFAOYSA-N 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- DCYGAPKNVCQNOE-UHFFFAOYSA-N 2,2,2-triphenylacetic acid Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(C(=O)O)C1=CC=CC=C1 DCYGAPKNVCQNOE-UHFFFAOYSA-N 0.000 description 1
- GZBSIABKXVPBFY-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;prop-2-enoic acid Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCC(CO)(CO)CO GZBSIABKXVPBFY-UHFFFAOYSA-N 0.000 description 1
- KCNISYPADDTFDO-UHFFFAOYSA-N 2,4-dinitrophenylacetic acid Chemical compound OC(=O)CC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O KCNISYPADDTFDO-UHFFFAOYSA-N 0.000 description 1
- ODVLMCWNGKLROU-UHFFFAOYSA-N 2-(1,3-benzodioxol-5-yl)acetic acid Chemical compound OC(=O)CC1=CC=C2OCOC2=C1 ODVLMCWNGKLROU-UHFFFAOYSA-N 0.000 description 1
- BBZDYQUXRFATHZ-UHFFFAOYSA-N 2-(2,5-dimethoxyphenyl)acetic acid Chemical compound COC1=CC=C(OC)C(CC(O)=O)=C1 BBZDYQUXRFATHZ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- IVEWTCACRDEAOB-UHFFFAOYSA-N 2-(2-methoxyphenyl)acetic acid Chemical compound COC1=CC=CC=C1CC(O)=O IVEWTCACRDEAOB-UHFFFAOYSA-N 0.000 description 1
- DDSJXCGGOXKGSJ-UHFFFAOYSA-N 2-(3,4,5-trimethoxyphenyl)acetic acid Chemical compound COC1=CC(CC(O)=O)=CC(OC)=C1OC DDSJXCGGOXKGSJ-UHFFFAOYSA-N 0.000 description 1
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- FFPAFDDLAGTGPQ-UHFFFAOYSA-N 2-(3,5-dimethoxyphenyl)acetic acid Chemical compound COC1=CC(CC(O)=O)=CC(OC)=C1 FFPAFDDLAGTGPQ-UHFFFAOYSA-N 0.000 description 1
- GXXXUZIRGXYDFP-UHFFFAOYSA-N 2-(4-methylphenyl)acetic acid Chemical compound CC1=CC=C(CC(O)=O)C=C1 GXXXUZIRGXYDFP-UHFFFAOYSA-N 0.000 description 1
- RBSRRICSXWXMRC-UHFFFAOYSA-N 2-(4-nitrophenyl)propanoic acid Chemical compound OC(=O)C(C)C1=CC=C([N+]([O-])=O)C=C1 RBSRRICSXWXMRC-UHFFFAOYSA-N 0.000 description 1
- CMWTZPSULFXXJA-UHFFFAOYSA-N 2-(6-methoxy-2-naphthalenyl)propanoic acid Chemical compound C1=C(C(C)C(O)=O)C=CC2=CC(OC)=CC=C21 CMWTZPSULFXXJA-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- MMEDJBFVJUFIDD-UHFFFAOYSA-N 2-[2-(carboxymethyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=CC=C1CC(O)=O MMEDJBFVJUFIDD-UHFFFAOYSA-N 0.000 description 1
- GDYYIJNDPMFMTB-UHFFFAOYSA-N 2-[3-(carboxymethyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=CC(CC(O)=O)=C1 GDYYIJNDPMFMTB-UHFFFAOYSA-N 0.000 description 1
- SLWIPPZWFZGHEU-UHFFFAOYSA-N 2-[4-(carboxymethyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=C(CC(O)=O)C=C1 SLWIPPZWFZGHEU-UHFFFAOYSA-N 0.000 description 1
- QLIBJPGWWSHWBF-UHFFFAOYSA-N 2-aminoethyl methacrylate Chemical compound CC(=C)C(=O)OCCN QLIBJPGWWSHWBF-UHFFFAOYSA-N 0.000 description 1
- UGIJCMNGQCUTPI-UHFFFAOYSA-N 2-aminoethyl prop-2-enoate Chemical compound NCCOC(=O)C=C UGIJCMNGQCUTPI-UHFFFAOYSA-N 0.000 description 1
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical class OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- WBJWXIQDBDZMAW-UHFFFAOYSA-N 2-hydroxynaphthalene-1-carbonyl chloride Chemical compound C1=CC=CC2=C(C(Cl)=O)C(O)=CC=C21 WBJWXIQDBDZMAW-UHFFFAOYSA-N 0.000 description 1
- YRNDGUSDBCARGC-UHFFFAOYSA-N 2-methoxyacetophenone Chemical compound COCC(=O)C1=CC=CC=C1 YRNDGUSDBCARGC-UHFFFAOYSA-N 0.000 description 1
- RTEZVHMDMFEURJ-UHFFFAOYSA-N 2-methylpentan-2-yl 2,2-dimethylpropaneperoxoate Chemical compound CCCC(C)(C)OOC(=O)C(C)(C)C RTEZVHMDMFEURJ-UHFFFAOYSA-N 0.000 description 1
- VIBOGIYPPWLDTI-UHFFFAOYSA-N 2-naphthylacetic acid Chemical compound C1=CC=CC2=CC(CC(=O)O)=CC=C21 VIBOGIYPPWLDTI-UHFFFAOYSA-N 0.000 description 1
- WLJVXDMOQOGPHL-PPJXEINESA-N 2-phenylacetic acid Chemical compound O[14C](=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-PPJXEINESA-N 0.000 description 1
- LVFFZQQWIZURIO-UHFFFAOYSA-N 2-phenylbutanedioic acid Chemical compound OC(=O)CC(C(O)=O)C1=CC=CC=C1 LVFFZQQWIZURIO-UHFFFAOYSA-N 0.000 description 1
- OFJWFSNDPCAWDK-UHFFFAOYSA-N 2-phenylbutyric acid Chemical compound CCC(C(O)=O)C1=CC=CC=C1 OFJWFSNDPCAWDK-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- SDJCLYBBPUHKCD-UHFFFAOYSA-N 2-pyren-1-ylacetic acid Chemical compound C1=C2C(CC(=O)O)=CC=C(C=C3)C2=C2C3=CC=CC2=C1 SDJCLYBBPUHKCD-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- VZOPVJNBOQOLPN-UHFFFAOYSA-N 3-(p-nitrophenyl)propanoic acid Chemical compound OC(=O)CCC1=CC=C([N+]([O-])=O)C=C1 VZOPVJNBOQOLPN-UHFFFAOYSA-N 0.000 description 1
- NMGODFWGUBLTTA-UHFFFAOYSA-N 3-amino-1h-quinazoline-2,4-dione Chemical compound C1=CC=C2C(=O)N(N)C(=O)NC2=C1 NMGODFWGUBLTTA-UHFFFAOYSA-N 0.000 description 1
- HDLQGISFYDYWFJ-UHFFFAOYSA-N 3-methyl-2-phenylbutanoic acid Chemical compound CC(C)C(C(O)=O)C1=CC=CC=C1 HDLQGISFYDYWFJ-UHFFFAOYSA-N 0.000 description 1
- JHWGFJBTMHEZME-UHFFFAOYSA-N 4-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OCCCCOC(=O)C=C JHWGFJBTMHEZME-UHFFFAOYSA-N 0.000 description 1
- WYXQDGGJZMWJOX-UHFFFAOYSA-N 5-ethyl-1-methyltetrazole Chemical compound CCC1=NN=NN1C WYXQDGGJZMWJOX-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- FIHBHSQYSYVZQE-UHFFFAOYSA-N 6-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCCOC(=O)C=C FIHBHSQYSYVZQE-UHFFFAOYSA-N 0.000 description 1
- DNVJGJUGFFYUPT-UHFFFAOYSA-N 9h-fluorene-9-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C3=CC=CC=C3C2=C1 DNVJGJUGFFYUPT-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- DIWVBIXQCNRCFE-UHFFFAOYSA-N DL-alpha-Methoxyphenylacetic acid Chemical compound COC(C(O)=O)C1=CC=CC=C1 DIWVBIXQCNRCFE-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- HEFNNWSXXWATRW-UHFFFAOYSA-N Ibuprofen Chemical compound CC(C)CC1=CC=C(C(C)C(O)=O)C=C1 HEFNNWSXXWATRW-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- IWYDHOAUDWTVEP-UHFFFAOYSA-N R-2-phenyl-2-hydroxyacetic acid Natural products OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- JACRWUWPXAESPB-QMMMGPOBSA-N Tropic acid Natural products OC[C@H](C(O)=O)C1=CC=CC=C1 JACRWUWPXAESPB-QMMMGPOBSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- VSBFNCXKYIEYIS-UHFFFAOYSA-N Xanthene-9-carboxylic acid Chemical compound C1=CC=C2C(C(=O)O)C3=CC=CC=C3OC2=C1 VSBFNCXKYIEYIS-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- INXWLSDYDXPENO-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(CO)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C INXWLSDYDXPENO-UHFFFAOYSA-N 0.000 description 1
- MPIAGWXWVAHQBB-UHFFFAOYSA-N [3-prop-2-enoyloxy-2-[[3-prop-2-enoyloxy-2,2-bis(prop-2-enoyloxymethyl)propoxy]methyl]-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(COC(=O)C=C)(COC(=O)C=C)COCC(COC(=O)C=C)(COC(=O)C=C)COC(=O)C=C MPIAGWXWVAHQBB-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- PYHXGXCGESYPCW-UHFFFAOYSA-N alpha-phenylbenzeneacetic acid Natural products C=1C=CC=CC=1C(C(=O)O)C1=CC=CC=C1 PYHXGXCGESYPCW-UHFFFAOYSA-N 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- ZKTARFAXHMRZEF-UHFFFAOYSA-N azane;5-(2h-tetrazol-5-yl)-2h-tetrazole Chemical compound N.N.N1N=NC(C2=NNN=N2)=N1 ZKTARFAXHMRZEF-UHFFFAOYSA-N 0.000 description 1
- UKXSKSHDVLQNKG-UHFFFAOYSA-N benzilic acid Chemical compound C=1C=CC=CC=1C(O)(C(=O)O)C1=CC=CC=C1 UKXSKSHDVLQNKG-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- QRZAKQDHEVVFRX-UHFFFAOYSA-N biphenyl-4-ylacetic acid Chemical compound C1=CC(CC(=O)O)=CC=C1C1=CC=CC=C1 QRZAKQDHEVVFRX-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006114 decarboxylation reaction Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- IIQWTZQWBGDRQG-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate;isocyanic acid Chemical compound N=C=O.CCOC(=O)C(C)=C IIQWTZQWBGDRQG-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- VPASWAQPISSKJP-UHFFFAOYSA-N ethyl prop-2-enoate;isocyanic acid Chemical compound N=C=O.CCOC(=O)C=C VPASWAQPISSKJP-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- YPGCWEMNNLXISK-UHFFFAOYSA-N hydratropic acid Chemical compound OC(=O)C(C)C1=CC=CC=C1 YPGCWEMNNLXISK-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000006459 hydrosilylation reaction Methods 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- DKYWVDODHFEZIM-UHFFFAOYSA-N ketoprofen Chemical compound OC(=O)C(C)C1=CC=CC(C(=O)C=2C=CC=CC=2)=C1 DKYWVDODHFEZIM-UHFFFAOYSA-N 0.000 description 1
- 229960000991 ketoprofen Drugs 0.000 description 1
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 description 1
- 229960002510 mandelic acid Drugs 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000007974 melamines Chemical class 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- WWYDYZMNFQIYPT-UHFFFAOYSA-N ru78191 Chemical compound OC(=O)C(C(O)=O)C1=CC=CC=C1 WWYDYZMNFQIYPT-UHFFFAOYSA-N 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 125000001834 xanthenyl group Chemical group C1=CC=CC=2OC3=CC=CC=C3C(C12)* 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Definitions
- the present invention is a method of manufacturing a semiconductor chip by dicing a wafer in a state where it is reinforced with a dicing tape, and no displacement occurs even when an aqueous organic solvent is used.
- the present invention relates to a method of manufacturing a semiconductor chip in which residue adhesion does not occur on the semiconductor chip.
- a high-purity rod-shaped semiconductor single crystal or the like is usually sliced into a wafer, a predetermined circuit pattern is formed on the wafer surface using a photoresist, and then the back surface of the wafer is ground by a grinder. After that, it is manufactured by finally dicing into chips.
- a dicing tape is attached to the back side of the wafer, the wafer is bonded and fixed in a vertical direction and a horizontal direction, and separated into individual semiconductor chips.
- a method of picking up the chip from the dicing tape side with a needle and fixing it on the die pad has been adopted.
- Patent Document 1 using a grinding apparatus having a plurality of grindstone axes, a process of thinning the wafer thickness with at least one grindstone axis from the back side of the wafer, and at least one other grindstone axis
- dicing tape is used for the purpose of preventing wafer misalignment even in such a method. Yes.
- a high adhesive force is required for the dicing tape for fixing the wafer.
- a water-based organic solvent such as an isopropyl alcohol aqueous solution may be sprayed on the surface of the wafer in order to remove shavings. Therefore, the dicing tape is also required to have chemical resistance against the aqueous organic solvent.
- the adhesive force of the dicing tape is increased and chemical resistance is imparted, when the semiconductor chip obtained from the dicing tape is peeled off, residues resulting from the dicing tape may adhere to the surface of the semiconductor chip. There was a problem that there was. Such a problem of adhesion of residues tended to become more prominent as time passed after the dicing tape was applied to the wafer.
- the present invention is a method for manufacturing a semiconductor chip by dicing a wafer in a state reinforced with a dicing tape in view of the above-described situation, and no positional deviation or the like occurs even when an aqueous organic solvent is used. And it aims at providing the manufacturing method of the semiconductor chip which adhesion of a residue does not generate
- the present invention is a dicing tape sticking step in which a dicing tape composed of a pressure-sensitive adhesive layer containing a curable pressure-sensitive adhesive component that crosslinks and hardens upon stimulation and a base film is attached to a wafer from the pressure-sensitive adhesive layer side for reinforcement.
- a dicing step for dicing the wafer reinforced by the dicing tape to obtain a semiconductor chip; and the dicing step A semiconductor chip manufacturing method including a semiconductor chip peeling step of peeling a semiconductor chip from a tape.
- the present invention is described in detail below.
- the present inventors have used a dicing tape comprising a base material film and a pressure-sensitive adhesive layer containing a curable pressure-sensitive adhesive component that crosslinks and cures by stimulation, and affixes this to a wafer in an uncured state.
- a dicing tape comprising a base material film and a pressure-sensitive adhesive layer containing a curable pressure-sensitive adhesive component that crosslinks and cures by stimulation, and affixes this to a wafer in an uncured state.
- the dicing tape after applying the dicing tape, before the dicing process, it is stimulated to crosslink and cure, so that even when an aqueous organic solvent is used, misalignment or the like does not occur on the obtained semiconductor chip.
- the present invention was completed by discovering that no adhesion of residues occurs on the wafer.
- the pressure-sensitive adhesive layer containing a curable pressure-sensitive adhesive component that is crosslinked and cured by stimulation has sufficient flexibility before the curable pressure-sensitive adhesive component is crosslinked and cured, a dicing tape using the adhesive layer is Even if it is a wafer having irregularities on its surface (for example, irregularities with a height of 20 ⁇ m or more, protruding electrodes, etc.), it has high adhesiveness that can reliably follow the irregularities and adhere to the wafer to protect it. It can be demonstrated. Further, since the pressure-sensitive adhesive layer is cross-linked and cured in this way, even when a water-based organic solvent is used in the dicing process, misalignment or the like does not occur.
- a wafer processing step of performing a process involving heating on a wafer reinforced with a dicing tape may be performed before the dicing step.
- the pressure-sensitive adhesive layer of the dicing tape contracts due to heating and warpage of the wafer occurs, or adhesion is increased and residue adhesion to the surface of the semiconductor chip becomes significant. was there.
- the semiconductor chip manufacturing method of the present invention even when such a wafer processing step is performed, the occurrence of warping or the surface of the semiconductor chip is obtained by crosslinking and curing the curable adhesive component before the wafer processing step. It is possible to prevent the residue from adhering to the surface.
- a dicing tape composed of at least a pressure-sensitive adhesive layer containing a curable pressure-sensitive adhesive component that is crosslinked and cured by stimulation and a base film is pasted on the wafer from the pressure-sensitive adhesive layer side. Then, a dicing tape sticking step for reinforcing is performed.
- the wafer is a raw material for semiconductor chips, and is not particularly limited, and a conventionally known wafer can be used. Further, in the present specification, the wafer includes a wafer level package, that is, a wafer that is processed in a wafer state up to a final package process. In particular, the present invention is particularly effective for a wafer having irregularities with a height of 20 ⁇ m or more on the surface.
- the dicing tape has at least an adhesive layer and a base film.
- the pressure-sensitive adhesive layer contains a curable pressure-sensitive adhesive component that is crosslinked and cured by stimulation.
- a dicing tape can be affixed to a wafer with high adhesive strength, and misalignment may occur even when an aqueous organic solvent is used. It is possible to achieve both high adhesiveness with no adhesion and high non-residue adhesion that can peel the semiconductor chip from the dicing tape without adhesion of residues.
- Examples of the stimulus for crosslinking and curing the curable pressure-sensitive adhesive component include light, heat, electromagnetic waves, electron beams, and ultrasonic waves. Among these, a photocurable pressure-sensitive adhesive component that is cross-linked and cured by ultraviolet irradiation is preferable.
- Examples of the photocurable pressure-sensitive adhesive component include a photocurable pressure-sensitive adhesive containing a polymerizable polymer as a main component and a photopolymerization initiator.
- the polymerizable polymer is prepared by, for example, previously synthesizing a (meth) acrylic polymer having a functional group in the molecule (hereinafter referred to as a functional group-containing (meth) acrylic polymer) and reacting with the functional group in the molecule. It can obtain by making it react with the compound (henceforth a functional group containing unsaturated compound) which has a functional group to perform and a radically polymerizable unsaturated bond.
- the functional group-containing (meth) acrylic polymer is an acrylic polymer having an alkyl group usually in the range of 2 to 18 as a polymer having adhesiveness at room temperature, as in the case of general (meth) acrylic polymers.
- a functional group-containing monomer, and, if necessary, another modifying monomer copolymerizable therewith by a conventional method It is obtained.
- the weight average molecular weight of the functional group-containing (meth) acrylic polymer is usually about 200,000 to 2,000,000.
- Examples of the functional group-containing monomer include a carboxyl group-containing monomer such as acrylic acid and methacrylic acid; a hydroxyl group-containing monomer such as hydroxyethyl acrylate and hydroxyethyl methacrylate; and an epoxy group containing glycidyl acrylate and glycidyl methacrylate.
- Examples of other modifying monomers that can be copolymerized include various monomers used in general (meth) acrylic polymers such as vinyl acetate, acrylonitrile, and styrene.
- the functional group-containing unsaturated compound to be reacted with the functional group-containing (meth) acrylic polymer is the same as the functional group-containing monomer described above according to the functional group of the functional group-containing (meth) acrylic polymer. it can.
- the functional group of the functional group-containing (meth) acrylic polymer is a carboxyl group
- an epoxy group-containing monomer or an isocyanate group-containing monomer is used
- the functional group is a hydroxyl group
- an isocyanate group-containing monomer is used.
- the functional group is an epoxy group
- a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide is used
- the functional group is an amino group, an epoxy group-containing monomer is used.
- the polymerizable polymer preferably has a lower limit of the content of the radical polymerizable unsaturated bond of 0.01 meq / g and a preferable upper limit of 2.0 meq / g.
- the adhesive layer is stimulated in the adhesive layer curing step to crosslink and cure the curable adhesive component. Even when an aqueous organic solvent is used in the dicing process, the pressure-sensitive adhesive layer can sufficiently protect the wafer without causing misalignment or the like.
- the minimum with more preferable content of the radically polymerizable unsaturated bond of the said polymeric polymer is 0.05 meq / g, and a more preferable upper limit is 1.5 meq / g.
- examples of the photopolymerization initiator to be blended include those that are activated by irradiation with light having a wavelength of 250 to 800 nm.
- examples of such photopolymerization initiators include acetophenone derivative compounds such as methoxyacetophenone, benzoin ether compounds such as benzoinpropyl ether and benzoin isobutyl ether, ketal derivative compounds such as benzyldimethyl ketal and acetophenone diethyl ketal, and phosphine.
- Oxide derivative compounds bis ( ⁇ 5-cyclopentadienyl) titanocene derivative compounds, benzophenone, Michler ketone, chlorothioxanthone, todecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, ⁇ -hydroxycycle
- photo radical polymerization initiators such as rohexyl phenyl ketone and 2-hydroxymethylphenyl propane. These photoinitiators may be used independently and 2 or more types may be used together.
- the curable pressure-sensitive adhesive component preferably further contains a radical polymerizable polyfunctional oligomer or monomer.
- a radical polymerizable polyfunctional oligomer or monomer By containing a radical polymerizable polyfunctional oligomer or monomer, the curability when stimulated is improved.
- the polyfunctional oligomer or monomer preferably has a molecular weight of 10,000 or less, and more preferably has a molecular weight of 5,000 or less so that a three-dimensional network of the cured component can be efficiently formed by heating or light irradiation.
- the number of radically polymerizable unsaturated bonds in the molecule is 2 to 20.
- the polyfunctional oligomer or monomer is, for example, trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or the same methacrylate as described above. And the like.
- Other examples include 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polypropylene glycol # 700 diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, and methacrylates similar to those described above. These polyfunctional oligomers or monomers may be used alone or in combination of two or more.
- the pressure-sensitive adhesive layer may further contain a gas generating agent that generates gas upon stimulation.
- a gas generating agent that generates gas upon stimulation.
- the adhesive layer is stimulated to generate gas from the gas generating agent, thereby making it easier and less adhesive residue.
- the dicing tape can be peeled off from the wafer without doing so.
- the curable pressure-sensitive adhesive component and the gas generating agent are selected from combinations in which the stimulus for crosslinking and curing the curable pressure-sensitive adhesive component and the stimulus for generating gas from the gas generating agent are qualitatively or quantitatively different. To do. By selecting such a combination, it is possible to prevent gas from being generated from the gas generating agent due to stimulation in the pressure-sensitive adhesive layer curing step and separation of the wafer and the dicing tape.
- a gas generating agent that generates gas by a stimulus other than light such as heat is selected.
- the stimulus for generating gas from the gas generating agent is light
- the light curable pressure-sensitive adhesive component can be used even if the wavelength is different from or overlaps with the light that crosslinks and cures the photo-curable pressure-sensitive adhesive component.
- a gas generating agent that requires a larger amount of light than the amount of light that crosslinks and cures is selected.
- the photocurable pressure-sensitive adhesive component that is crosslinked and cured by light irradiation contains a polymer having an unsaturated double bond such as a vinyl group in the side chain and a photopolymerization initiator that is activated at a wavelength of 250 to 800 nm.
- a photocurable pressure-sensitive adhesive component is combined with a gas generating agent that generates a gas by irradiating light with a wavelength of 300 nm or less, light having a wavelength of 365 nm or more is emitted in the pressure-sensitive adhesive layer curing step. Irradiation and light with a wavelength of 300 nm or less can be irradiated in the semiconductor chip peeling step.
- the said gas generating agent is not specifically limited, For example, conventionally well-known gas generating agents, such as an azo compound and an azide compound, can be used. In addition, since it has particularly excellent heat resistance, a carboxylic acid compound represented by the following general formula (1) or a salt thereof is also suitable. Such a gas generating agent generates gas (carbon dioxide gas) by irradiating light such as ultraviolet rays, and has high heat resistance that does not decompose even if heat is generated during the dicing process.
- gas generating agent generates gas (carbon dioxide gas) by irradiating light such as ultraviolet rays, and has high heat resistance that does not decompose even if heat is generated during the dicing process.
- R 1 to R 7 each represents hydrogen or an organic group.
- R 1 to R 7 may be the same or different.
- Two of R 1 to R 7 may be bonded to each other to form a cyclic structure.
- Examples of the organic group in the general formula (1) include an alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group, and an isobutyl group, an alkoxy group such as a methoxy group and an ethoxy group, a carboxyl group, a hydroxyl group, , Aromatic groups such as nitro groups and phenyl groups, polycyclic hydrocarbon groups such as naphthyl groups, fluorenyl groups and pyrenyl groups, ring-assembled hydrocarbon groups such as biphenyl groups, and heterocyclic groups such as xanthenyl groups Etc.
- an alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group, and an isobutyl group
- an alkoxy group such as a methoxy group and an ethoxy group
- a carboxyl group such as a hydroxyl group
- R 3 to R 7 in the above formula (1) is an organic group represented by the following formula (2), or R 3 to R 7 in the above formula (1). It is preferable that two adjacent ones are bonded to each other to form a cyclic structure represented by the following formula (3).
- R 8 to R 12 each represent hydrogen or an organic group.
- R 8 to R 12 may be the same or different.
- Two of R 8 to R 12 may be bonded to each other to form a cyclic structure.
- R 13 to R 16 each represent hydrogen or an organic group.
- R 13 to R 16 may be the same or different.
- Two of R 13 to R 16 may be bonded to each other to form a cyclic structure.
- R 1 in the above formula (1) is preferably a methyl group.
- carboxylic acid compound represented by the above formula (1) include, for example, phenylacetic acid, diphenylacetic acid, triphenylacetic acid, 2-phenylpropionic acid, 2,2-diphenylpropionic acid, 2,2,2- Triphenylpropionic acid, 2-phenylbutyric acid, ⁇ -methoxyphenylacetic acid, mandelic acid, atrolactone acid, benzylic acid, tropic acid, phenylmalonic acid, phenylsuccinic acid, 3-methyl-2-phenylbutyric acid, orthotoluylacetic acid , Metatoluylacetic acid, 4-isobutyl- ⁇ -methylphenylacetic acid, p-toluylacetic acid, 1,2-phenylenediacetic acid, 1,3-phenylenediacetic acid, 1,4-phenylenediacetic acid, 2-methoxyphenylacetic acid, 2-hydroxy Phenylacetic acid, 2-nitrophenylacetic acid, 3-nitro
- the carboxylic acid compound represented by the above formula (1) is ketoprofen represented by the following formula (1-1) or 2-xanthone acetic acid represented by the following formula (1-2). preferable.
- the salt of the carboxylic acid compound represented by the above formula (1) also has a skeleton derived from the carboxylic acid compound represented by the above formula (1), decarboxylation easily occurs when irradiated with light, Carbon dioxide gas can be generated.
- the salt of the carboxylic acid compound represented by the above formula (1) can be obtained by simply mixing the carboxylic acid compound represented by the above formula (1) and the basic compound in a container without going through a complicated synthesis route. Easy to prepare.
- the basic compound is not particularly limited, and examples thereof include amines, hydrazine compounds, quaternary ammonium hydroxide salts, and phosphine compounds.
- the amine is not particularly limited, and any of primary amines, secondary amines, and tertiary amines can be used. Among these, the basic compound is preferably a monoalkylamine or a dialkylamine.
- the polarity of the obtained salt of the carboxylic acid compound represented by the formula (1) can be reduced, and the solubility with the pressure-sensitive adhesive component can be increased. More preferably, it is a monoalkylamine or dialkylamine having 6 to 12 carbon atoms.
- gas generating agent a tetrazole compound represented by the following general formula (4), general formula (5) or general formula (6) or a salt thereof is also suitable.
- gas generating agents also generate gas (nitrogen gas) by irradiating light such as ultraviolet rays, and have high heat resistance that does not decompose even if heat is generated during the dicing process.
- R 21 and R 22 represent hydrogen, an alkyl group having 1 to 7 carbon atoms, an alkylene group, a phenyl group, a mercapto group, a hydroxyl group, or an amino group.
- the salt of the tetrazole compound represented by the general formulas (4) to (6) also has a skeleton derived from the tetrazole compound represented by the general formula (4) to (6), light is irradiated. And nitrogen gas can be generated.
- the salt of the tetrazole compound represented by the general formulas (4) to (6) is not particularly limited, and examples thereof include a sodium salt, a potassium salt, and an ammonium salt.
- the salt of the tetrazole compound represented by the general formulas (4) to (6) can be obtained by simply mixing the tetrazole compound and the basic compound represented by the general formulas (4) to (6) in a container. It can be easily prepared without going through a complicated synthetic route.
- the basic compound is not particularly limited, and examples thereof include amines, hydrazine compounds, quaternary ammonium hydroxide salts, and phosphine compounds.
- the amine is not particularly limited, and any of primary amines, secondary amines, and tertiary amines can be used. Among these, the basic compound is preferably a monoalkylamine or a dialkylamine.
- the polarity of the resulting salt of the tetrazole compound represented by the general formulas (4) to (6) can be reduced, so that it can be dissolved in the photocurable adhesive component.
- the tetrazole compound represented by the above general formula (4) or a salt thereof is not particularly limited. Specifically, for example, 1H-tetrazole, 5-phenyl-1H-tetrazole, 5,5-azobis-1H-tetrazole, 5 -Amino-1H-tetrazole, 5-methyl-1H-tetrazole, 1-methyl-5-mercapto-1H-tetrazole, 1-methyl-5-ethyl-1H-tetrazole, 1- (dimethylaminoethyl) -5-mercapto -1H-tetrazole and the like.
- the tetrazole compound represented by the general formula (5) or a salt thereof is not particularly limited, and specific examples include 5,5'-bistetrazole diammonium salt.
- the tetrazole compound represented by the general formula (6) or a salt thereof is not particularly limited, and specific examples include 5,5'-bistetrazoleamine monoammonium salt.
- a preferable lower limit with respect to 100 parts by weight of the curable pressure-sensitive adhesive component is 5 parts by weight, and a preferable upper limit is 50 parts by weight.
- the content of the gas generating agent is less than 5 parts by weight, the generation of carbon dioxide gas or nitrogen gas due to stimulation may be reduced, and sufficient peeling may not be performed. In some cases, it cannot be dissolved in the pressure-sensitive adhesive component, resulting in a decrease in adhesive strength.
- the minimum with more preferable content of the said gas generating agent is 10 weight part, and a more preferable upper limit is 30 weight part.
- the pressure-sensitive adhesive layer may further contain a photosensitizer. Since the photosensitizer has an effect of amplifying stimulation by light on the gas generating agent, gas can be released by irradiation with less light. In addition, gas can be emitted by light in a wider wavelength region.
- the photosensitizer is not particularly limited as long as it has excellent heat resistance.
- the photosensitizer excellent in heat resistance include polycyclic aromatic compounds having at least one alkoxy group.
- a substituted alkoxy polycyclic aromatic compound having an alkoxy group partially substituted with a glycidyl group or a hydroxyl group is preferable.
- These photosensitizers have high resistance to sublimation and can be used at high temperatures.
- the solubility to the said photocurable adhesive component increases, and a bleed-out can be prevented.
- the content of the photosensitizer is preferably 0.05 parts by weight and preferably 10 parts by weight with respect to 100 parts by weight of the curable pressure-sensitive adhesive component.
- the content of the photosensitizer is less than 0.05 parts by weight, a sufficient sensitizing effect may not be obtained.
- the content exceeds 10 parts by weight the residue derived from the photosensitizer increases. , Sufficient peeling may not be performed.
- the minimum with more preferable content of the said photosensitizer is 0.1 weight part, and a more preferable upper limit is 5 weight part.
- the pressure-sensitive adhesive layer may contain fumed silica. By blending fumed silica, the cohesive force of the pressure-sensitive adhesive layer is increased. Therefore, the pressure-sensitive adhesive layer can be made uniform without separation even when additives having different polarities are mixed with the functional group-containing (meth) acrylic polymer.
- the lower limit of the average particle diameter of the fumed silica is 0.05 ⁇ m, and the upper limit is 3 ⁇ m.
- the preferable lower limit of the average particle diameter of the fumed silica is 0.06 ⁇ m, the preferable upper limit is 2 ⁇ m, the more preferable lower limit is 0.07 ⁇ m, and the more preferable upper limit is 1 ⁇ m.
- the average particle diameter of fumed silica is determined by using any of the laser scattering / diffraction method or the dynamic light scattering method, methyl ethyl ketone, methyl ethyl ketone / toluene (60:40) solution before blending, or the like.
- the particle diameter of fumed silica dispersed in the medium is measured.
- the compounding quantity of 40 weight part or less is preferable with respect to 100 weight part of said curable adhesive components. With a blending amount of 40 parts by weight or less, the effect of improving the cohesive force to make the pressure-sensitive adhesive layer uniform and the effect of improving non-glue residue can be exhibited.
- the minimum of the compounding quantity of the said fumed silica is not specifically limited, In order to fully exhibit the effect of the uniformity of the said adhesive, and non-glue remaining property, it is preferable to mix
- the pressure-sensitive adhesive layer may contain a silicone compound having a functional group capable of crosslinking with the curable pressure-sensitive adhesive component (hereinafter also simply referred to as “silicone compound A”). Since the silicone compound is excellent in heat resistance, even if heat is generated during the dicing process, the adhesive is prevented from being burnt and the like is bleed out to the adherend interface at the time of peeling to facilitate peeling. Since the silicone compound has a functional group capable of cross-linking with the curable pressure-sensitive adhesive component, the silicone compound reacts with the curable pressure-sensitive adhesive component by giving a stimulus and is incorporated into the curable pressure-sensitive adhesive component. Silicone compounds do not adhere to the body and become contaminated.
- the silicone skeleton of the silicone compound A is not particularly limited, and may be either D-form or DT-form.
- the silicone compound A preferably has the functional group at the side chain or terminal of the silicone skeleton.
- the use of a silicone compound having a D-form silicone skeleton and having a functional group capable of crosslinking with the curable pressure-sensitive adhesive component at the end achieves both high initial adhesiveness and releasability at the time of peeling. It is more suitable because it is easy.
- the functional group of the silicone compound A an appropriate one is selected and used in accordance with the curable pressure-sensitive adhesive component.
- the curable pressure-sensitive adhesive component is a curable pressure-sensitive adhesive mainly comprising a (meth) acrylic acid alkyl ester-based polymerizable polymer having a radical polymerizable unsaturated bond in the molecule
- a functional group capable of crosslinking with an acrylic group is a functional group having an unsaturated double bond, and specific examples include a vinyl group, a (meth) acryl group, an allyl group, and a maleimide group.
- the functional group equivalent of the silicone compound A is not particularly limited, but the preferred lower limit is 1, and the preferred upper limit is 20. When the functional group equivalent is less than 1, the silicone compound A is not sufficiently taken into the photocurable pressure-sensitive adhesive component when the resulting pressure-sensitive adhesive layer is cured, and the adherend is contaminated or the peelability is sufficient. If it exceeds 20, sufficient adhesive strength may not be obtained.
- a more preferable upper limit of the functional group equivalent is 10, a more preferable lower limit is 2, and a more preferable upper limit is 6.
- the molecular weight of the silicone compound A is not particularly limited, but a preferred lower limit is 300 and a preferred upper limit is 50000. When the molecular weight is less than 300, the chemical resistance and heat resistance of the pressure-sensitive adhesive layer may be insufficient, and when it exceeds 50,000, mixing with the curable pressure-sensitive adhesive component may be difficult.
- the more preferable lower limit of the molecular weight is 400, the more preferable upper limit is 10,000, the still more preferable lower limit is 500, and the more preferable upper limit is 5000.
- the method for synthesizing the silicone compound A is not particularly limited.
- the silicone resin having a SiH group and the vinyl compound having a functional group capable of crosslinking with the curable pressure-sensitive adhesive component are reacted by a hydrosilylation reaction.
- a method for introducing a functional group capable of crosslinking with the curable pressure-sensitive adhesive component into a silicone resin, a method for causing a condensation reaction between a siloxane compound and a siloxane compound having a functional group capable of crosslinking with the curable pressure-sensitive adhesive component, etc. Is mentioned.
- silicone compounds A include, for example, X-22-164, X-22-164AS, X-22-164A, X-22-164B, X-22-164C manufactured by Shin-Etsu Chemical Co., Ltd. , X-22-164E and other silicone compounds having methacrylic groups at both ends, and X-22-174DX, X-22-2426, X-22-2475 manufactured by Shin-Etsu Chemical Co., Ltd.
- a silicone compound having an acrylic group such as EBECRYL350 and EBECRYL1360 manufactured by Daicel Cytec, a silicone compound having an acrylic group such as AC-SQ TA-100 and AC-SQ SI-20 manufactured by Toagosei Co., Ltd. MAC-SQ TM-100, MAC-SQ SI-20, MAC-, manufactured by Toagosei Co., Ltd. Silicone compounds having a methacryl group such as Q HDM like.
- X and Y represent an integer of 0 to 1200 (except when X and Y are both 0), and R represents a functional group having an unsaturated double bond.
- silicone compounds having a (meth) acryl group in the siloxane skeleton represented by the above general formula (I), general formula (II), or general formula (III) commercially available products are, for example, manufactured by Daicel Cytec Co., Ltd. EBECRYL350, EBECRYL1360 (both of which R is an acrylic group) and the like.
- the said silicone compound can also use the silicone compound which has a three-dimensional structure represented by the following general formula (IV).
- the preferable lower limit of the content of the silicone compound A is 0.5 parts by weight with respect to 100 parts by weight of the curable pressure-sensitive adhesive component, and the preferable upper limit is 50 parts by weight.
- the content of the silicone compound A is less than 0.5 parts by weight, the adhesive strength may not be sufficiently reduced even if stimulation is given, and the adherend may not be peeled off. May cause contamination.
- the more preferable lower limit of the content of the silicone compound A is 1 part by weight, and the more preferable upper limit is 40 parts by weight.
- the above-mentioned pressure-sensitive adhesive layer may appropriately contain various polyfunctional compounds that are blended in general pressure-sensitive adhesives such as isocyanate compounds, melamine compounds, and epoxy compounds for the purpose of adjusting the cohesive force.
- the pressure-sensitive adhesive layer may contain known additives such as a plasticizer, a resin, a surfactant, a wax, and a fine particle filler.
- the pressure-sensitive adhesive layer has a storage shear modulus of 1.0 ⁇ 10 5 at 25 ° C. measured at -50 ° C. to 300 ° C. in the shear mode of dynamic viscoelasticity measurement before the dicing tape application step. 2 to 2.0 ⁇ 10 5 Pa is preferable.
- the storage shear elastic modulus of the pressure-sensitive adhesive layer before crosslinking and curing is within this range, so that even if the wafer has a concavo-convex with a height of 20 ⁇ m or more on the surface, it can follow the concavo-convex more reliably. The wafer can be reliably protected.
- the more preferable lower limit of the storage shear modulus at 25 ° C. before the dicing tape attaching step of the pressure-sensitive adhesive layer is 1.0 ⁇ 10 3 Pa, and the more preferable upper limit is 1.0 ⁇ 10 5 Pa.
- the pressure-sensitive adhesive layer has a storage shear modulus of 2.0 ⁇ 10 5 at 25 ° C. measured at a continuous temperature increase from ⁇ 50 ° C. to 300 ° C. in the shear mode of dynamic viscoelasticity measurement after the pressure-sensitive adhesive layer curing step. 5 to 1.0 ⁇ 10 9 Pa is preferable.
- the storage shear modulus of the pressure-sensitive adhesive layer after crosslinking and curing is within this range, the wafer is sufficiently protected without causing misalignment even when an aqueous organic solvent is used in the dicing process, In addition, residue adhesion does not occur on the resulting semiconductor chip.
- the adhesive layer of the dicing tape shrinks due to heating even if it has a wafer processing process in which the wafer reinforced with the dicing tape is subjected to a process involving heating.
- the more preferable lower limit of the storage shear modulus at 25 ° C. after the pressure-sensitive adhesive layer curing step of the pressure-sensitive adhesive layer is 1.0 ⁇ 10 6 Pa, and the more preferable upper limit is 5.0 ⁇ 10 8 Pa.
- the thickness of the said adhesive layer is not specifically limited, A preferable minimum is 5 micrometers and a preferable upper limit is 100 micrometers. When the thickness of the pressure-sensitive adhesive layer is within this range, it can be adhered to the wafer with sufficient adhesive force, and the wafer being processed can be protected.
- the minimum with more preferable thickness of the said adhesive layer is 10 micrometers, and a more preferable upper limit is 50 micrometers.
- the wafer is a wafer having irregularities with a height of 20 ⁇ m or more on the surface
- a passivation film made of a resin such as polyimide may be formed on the surface of the wafer for the purpose of protecting the surface of the wafer.
- the convex portion may bite into the pressure-sensitive adhesive layer, and may directly contact the passivation film. If a wafer processing step for performing a process involving heating in such a state is performed, the pressure-sensitive adhesive layer is scorched on the passivation film, which tends to cause adhesive residue.
- the preferable lower limit of the difference between the thickness of the pressure-sensitive adhesive layer and the height of the unevenness of the wafer is 10 ⁇ m, and the preferable upper limit is 100 ⁇ m.
- the difference is less than 10 ⁇ m, a part where the pressure-sensitive adhesive layer and the passivation film are in direct contact with each other is generated, and an adhesive residue may be generated. If the difference exceeds 100 ⁇ m, the adhesive strength is insufficient and the wafer may not be sufficiently protected.
- the more preferable lower limit of the difference is 20 ⁇ m, and the more preferable upper limit is 80 ⁇ m.
- the base film is not particularly limited.
- a film made of a transparent resin such as acrylic, olefin, polycarbonate, vinyl chloride, ABS, polyethylene terephthalate (PET), nylon, urethane, polyimide, or a film having a network structure. And a film having a hole formed therein.
- the thickness of the said base film is not specifically limited, A preferable minimum is 10 micrometers and a preferable upper limit is 200 micrometers. When the thickness of the base film is within this range, the wafer can be sufficiently reinforced and the semiconductor chip can be easily peeled off in the semiconductor chip peeling step.
- a pressure-sensitive adhesive layer curing step is then performed in which the pressure-sensitive adhesive layer is stimulated to crosslink and cure the curable pressure-sensitive adhesive component.
- the curable pressure-sensitive adhesive component for example, a photo-curable pressure-sensitive adhesive component containing a polymer having an unsaturated double bond such as a vinyl group in the side chain and a photopolymerization initiator activated at a wavelength of 250 to 800 nm was used.
- the curable pressure-sensitive adhesive component can be crosslinked and cured by irradiating light having a wavelength of 365 nm or more.
- a photocurable pressure-sensitive adhesive component for example, it is preferable to irradiate light with a wavelength of 365 nm with an illuminance of 5 mW or more, more preferably with an illuminance of 10 mW or more, and with an illuminance of 20 mW or more. It is more preferable to irradiate with an illuminance of 50 mW or more.
- the semiconductor chip manufacturing method of the present invention may include a wafer processing step of performing a process involving heating on a wafer reinforced by a dicing tape after the pressure-sensitive adhesive layer curing step and before the next dicing step. Good.
- the curable pressure-sensitive adhesive component is crosslinked and cured in the pressure-sensitive adhesive layer curing step before the wafer processing step.
- the wafer processing step for performing the treatment with heating includes, for example, a grinding process for grinding the wafer to a certain thickness, sputtering, vapor deposition, etching, chemical vapor deposition (CVD), physical vapor deposition (PVD). ), Resist coating / patterning, reflow and the like.
- a dicing process is then performed to obtain a semiconductor chip by dicing the wafer reinforced with a dicing tape.
- the dicing method is not particularly limited, and a method of cutting and separating using a conventionally known grindstone or the like can be used.
- a water-based organic solvent such as an isopropyl alcohol aqueous solution may be sprayed onto the surface of the wafer in order to remove shavings.
- the pressure-sensitive adhesive layer crosslinked and cured in the pressure-sensitive adhesive curing step can exhibit sufficient chemical resistance even with respect to an aqueous organic solvent.
- a semiconductor chip peeling step for peeling the semiconductor chip from the dicing tape is then performed.
- the method for peeling the semiconductor chip is not particularly limited, and a conventionally known method can be used. That is, either a needle pickup method in which the obtained semiconductor chip is pushed from the dicing tape side with a needle or a needleless pickup method that does not use a needle may be used. Since the elastic modulus of the pressure-sensitive adhesive layer crosslinked and cured in the pressure-sensitive adhesive curing step is increased, the semiconductor chip can be peeled off easily and without residue. Further, even if the time has elapsed after the dicing tape is applied to the wafer, the adhesion enhancement hardly proceeds.
- the semiconductor chip can be peeled off more easily by generating a gas from the gas generating agent by applying a stimulus in the semiconductor chip peeling step.
- a gas generating agent that generates gas by irradiating light with a wavelength of 300 nm or less is used as the gas generating agent, gas is emitted from the gas generating agent by irradiating light with a wavelength of 300 nm or less.
- the semiconductor chip can be peeled off from the dicing tape more easily.
- light with a wavelength of 254 nm is preferably irradiated with an illuminance of 5 mW or more, more preferably with an illuminance of 10 mW or more, and irradiation with an illuminance of 20 mW or more. More preferably, irradiation with an illuminance of 50 mW or more is particularly preferable.
- a method for manufacturing a semiconductor chip by dicing a wafer in a state reinforced with a dicing tape, without causing misalignment or the like even when an aqueous organic solvent is used. It is possible to provide a method for manufacturing a semiconductor chip in which residue adhesion does not occur on the manufactured semiconductor chip.
- Example 1 Preparation of dicing tape A reactor equipped with a thermometer, a stirrer, and a cooling pipe was prepared. In this reactor, 94 parts by weight of 2-ethylhexyl acrylate as a (meth) acrylic acid alkyl ester and a functional group-containing monomer were prepared. After adding 6 parts by weight of hydroxyethyl methacrylate, 0.01 part by weight of lauryl mercaptan and 80 parts by weight of ethyl acetate, the reactor was heated to start refluxing.
- a photopolymerization initiator (Esacure One, manufactured by Nippon Shibel Hegner), 100 parts by weight of the resin solid content of the resulting ethyl acetate solution of the photocurable adhesive, a silicone compound having a (meth) acrylic group (Daicel) Cytec Co., Ltd., EBECRYL350 (acrylic equivalent 2) 2 parts by weight, plasticizer (Negami Kogyo Co., UN-5500) 10 parts by weight, and crosslinking agent (Nippon Polyurethane Co., Ltd., Coronate L-45) 0.5 part by weight Parts were mixed to prepare an ethyl acetate solution of the pressure-sensitive adhesive composition.
- a photopolymerization initiator Esacure One, manufactured by Nippon Shibel Hegner
- a doctor knife so that the ethyl acetate solution of the obtained pressure-sensitive adhesive composition has a dry film thickness of 30 ⁇ m on the corona-treated surface of a transparent polyethylene naphthalate film having a thickness of 50 ⁇ m that has been corona-treated on one side.
- the coating solution was dried by heating at 110 ° C. for 5 minutes. Thereafter, static curing was performed at 40 ° C. for 3 days to obtain a dicing tape.
- the obtained adhesive tape was cut into a rectangular shape having a length of 0.6 cm and a width of 1.0 cm, and this was used as a sample for evaluation.
- an aqueous isopropyl alcohol solution was sprayed onto the surface of the wafer in order to remove shavings.
- the wafer was sufficiently fixed to the dicing tape, and no occurrence of misalignment was observed.
- the obtained semiconductor chip was peeled off by a method of pushing up from the dicing tape side with a needle. The surfaces of all the obtained semiconductor chips were observed at a magnification of 100 times using an optical microscope, but no semiconductor chips were found to have attached residues.
- Example 2 A silicon wafer having a diameter of 20 cm and a thickness of about 100 ⁇ m in which a circuit having a groove having a height of 20 ⁇ m and a width of 100 ⁇ m is formed on one surface is used as a silicon wafer, and a dicing tape is attached to the circuit surface to obtain a laminate.
- a semiconductor chip was manufactured in the same manner as in Example 1 except that. As a result, during the dicing process, the wafer was sufficiently fixed to the dicing tape, and no occurrence of misalignment was observed, and the surfaces of all the obtained semiconductor chips were magnified by a factor of 100 using an optical microscope. As a result of observation, no semiconductor chip was found to have adhered residues.
- Example 3 As a silicon wafer, a silicon wafer having a diameter of 20 cm and a thickness of about 100 ⁇ m on which an electrode having a height of 80 ⁇ m is formed on a surface on which a polyimide passivation film is formed, and a dicing tape is attached to the electrode surface to form a laminate. A semiconductor chip was manufactured in the same manner as in Example 1 except that it was obtained. As a result, during the dicing process, the wafer was sufficiently fixed to the dicing tape, and no occurrence of misalignment was observed, and the surfaces of all the obtained semiconductor chips were magnified by a factor of 100 using an optical microscope. As a result of observation, no semiconductor chip was found to have adhered residues.
- Example 4 In the manufacture of semiconductor chips, after the photocurable adhesive component is cross-linked and cured, before dicing, the wafer reinforced with dicing tape is placed in a reflow oven and subjected to a total of 3 heat treatments at 260 ° C. for 6 minutes. A semiconductor chip was manufactured in the same manner as in Example 1 except that the process was repeated. As a result, during the dicing process, the wafer was sufficiently fixed to the dicing tape, and no occurrence of misalignment was observed, and the surfaces of all the obtained semiconductor chips were magnified by a factor of 100 using an optical microscope. As a result of observation, no semiconductor chip was found to have adhered residues.
- Example 1 A semiconductor chip was produced in the same manner as in Example 1 except that the photocurable pressure-sensitive adhesive component was not crosslinked and cured without performing ultraviolet irradiation before the dicing step. As a result, during the dicing process, the adhesive strength of the dicing tape was reduced and a slight positional shift occurred. Moreover, when the surface of all the obtained semiconductor chips was observed at 100-times magnification using the optical microscope, the semiconductor chip which the residue adhered was recognized.
- Example 2 A semiconductor chip was manufactured in the same manner as in Example 2 except that the dicing tape was irradiated with ultraviolet rays to crosslink and cure the photocurable adhesive component before being attached to the wafer. However, the dicing tape did not sufficiently adhere to the wafer, and the dicing process could not be performed.
- Example 3 As a silicon wafer, a silicon wafer having a diameter of 20 cm and a thickness of about 100 ⁇ m in which an electrode having a height of 20 ⁇ m is formed on a surface on which a polyimide passivation film is formed, and a dicing tape is attached to the electrode surface to form a laminate.
- a semiconductor chip was manufactured in the same manner as in Example 3 except that the photocurable pressure-sensitive adhesive component was not crosslinked and cured without performing ultraviolet irradiation before the dicing step. As a result, during the dicing process, the adhesive strength of the dicing tape was reduced and a slight positional shift occurred. Further, when the surfaces of all the obtained semiconductor chips were observed at a magnification of 100 times using an optical microscope, a large number of semiconductor chips to which residues adhered were observed.
- Example 4 A semiconductor chip was produced in the same manner as in Example 4 except that the photocurable pressure-sensitive adhesive component was not crosslinked and cured without performing ultraviolet irradiation before the dicing step. As a result, during the dicing process, the adhesive strength of the dicing tape was reduced and a slight positional shift occurred. Further, when the surfaces of all the obtained semiconductor chips were observed at a magnification of 100 times using an optical microscope, a large number of semiconductor chips to which residues adhered were observed.
- a method for manufacturing a semiconductor chip by dicing a wafer in a state reinforced with a dicing tape, without causing misalignment or the like even when an aqueous organic solvent is used. It is possible to provide a method for manufacturing a semiconductor chip in which residue adhesion does not occur on the manufactured semiconductor chip.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
以下に本発明を詳述する。
刺激により架橋、硬化する硬化型粘着剤成分を含有する粘着剤層は、該硬化型粘着剤成分を架橋、硬化させる前には充分な柔軟性を有することから、これを用いたダイシングテープは、たとえ表面に凹凸(例えば、高さ20μm以上の凹凸。突起電極等。)を有するウエハであっても確実に凹凸に追従して、ウエハに貼付してこれを保護することができる高い粘着性を発揮することができる。また、このように粘着剤層が架橋、硬化していることにより、ダイシング工程において水系有機溶剤を用いた場合にでも、位置ずれ等が発生することがない。更に、粘着剤層が架橋、硬化していることにより、接着亢進等も生じることなく、残渣の付着が発生することなく半導体チップをダイシングテープから剥離することができる。
また、半導体チップの製造方法においては、ダイシング工程前に、ダイシングテープにより補強されたウエハに加熱を伴う処理を施すウエハ処理工程を施すこともある。このようなウエハ処理工程においては、加熱によりダイシングテープの粘着剤層が収縮してウエハに反りが発生したり、接着亢進が生じて半導体チップの表面への残渣の付着が顕著となったりすることがあった。本発明の半導体チップの製造方法では、このようなウエハ処理工程を行う場合であっても、ウエハ処理工程前に硬化型粘着剤成分を架橋、硬化させることにより、反りの発生や半導体チップの表面への残渣の付着を防止することができる。
上記ウエハは、半導体チップの原料となるものであり、特に限定されず従来公知のものを用いることができる。また、本明細書においてウエハには、ウエハレベルパッケージ、即ち、ウエハ状態でパッケージ最終工程まで処理して完成させるウエハも含まれる。
なかでも、表面に高さ20μm以上の凹凸を有するウエハに対して、本発明は特に有効である。
上記粘着剤層は、刺激により架橋、硬化する硬化型粘着剤成分を含有する。このような硬化型粘着剤成分を含有する粘着剤層を用いることにより、高い粘着力でダイシングテープをウエハに貼付することができ、水系有機溶剤を用いた場合にでも位置ずれ等が発生することがない高い粘着性と、残渣が付着することなく半導体チップをダイシングテープから剥離することができる高い非残渣付着性とを両立することができる。
上記光硬化型粘着剤成分としては、例えば、重合性ポリマーを主成分として、光重合開始剤を含有する光硬化型粘着剤が挙げられる。
上記多官能オリゴマー又はモノマーは、分子量が1万以下であるものが好ましく、より好ましくは加熱又は光の照射による硬化成分の三次元網状化が効率よくなされるように、その分子量が5000以下でかつ分子内のラジカル重合性の不飽和結合の数が2~20個のものである。
例えば、上記光照射により架橋、硬化する光硬化型粘着剤成分として、側鎖にビニル基等の不飽和二重結合を有するポリマーと250~800nmの波長で活性化する光重合開始剤を含有する粘着剤を用いた場合、365nm以上の波長の光を照射することにより架橋、硬化させることができる。このような光硬化型粘着剤成分に対して、300nm以下の波長の光を照射することにより気体を発生する気体発生剤を組み合わせれば、粘着剤層硬化工程においては365nm以上の波長の光を照射し、半導体チップ剥離工程においては300nm以下の波長の光を照射することが可能となる。
また、特に優れた耐熱性を有することから、下記一般式(1)で表されるカルボン酸化合物又はその塩も好適である。このような気体発生剤は、紫外線等の光を照射することにより気体(二酸化炭素ガス)を発生する一方、ダイシング工程時に熱が発生しても分解しない高い耐熱性を有する。
なかでも、上記式(1)中のR3~R7のうちの1つが、下記式(2)で表される有機基であるか、又は、上記式(1)中のR3~R7のうちの隣り合う2つが互いに結合して下記式(3)で表される環状構造を形成していることが好ましい。
式(3)中、R13~R16は、それぞれ水素又は有機基を示す。R13~R16は、同一であってもよく、異なっていてもよい。R13~R16のうちの2つが互いに結合し、環状構造を形成していてもよい。
また、上記式(1)中のR1は、メチル基であることが好ましい。
上記塩基性化合物は特に限定されないが、例えば、アミン、ヒドラジン化合物、水酸化四級アンモニウム塩、ホスフィン化合物等が挙げられる。
上記アミンは特に限定されず、一級アミン、二級アミン及び三級アミンのいずれをも用いることができる。
なかでも上記塩基性化合物は、モノアルキルアミン又はジアルキルアミンが好適である。モノアルキルアミン又はジアルキルアミンを用いた場合には、得られる上記式(1)で表されるカルボン酸化合物の塩の極性を低極性化でき、粘着剤成分との溶解性を高めることできる。より好ましくは、炭素数6~12のモノアルキルアミン又はジアルキルアミンである。
上記一般式(4)~(6)で表されるテトラゾール化合物の塩は特に限定されず、例えば、ナトリウム塩、カリウム塩、アンモニウム塩等が挙げられる。
上記塩基性化合物は特に限定されないが、例えば、アミン、ヒドラジン化合物、水酸化四級アンモニウム塩、ホスフィン化合物等が挙げられる。
上記アミンは特に限定されず、一級アミン、二級アミン及び三級アミンのいずれをも用いることができる。
なかでも上記塩基性化合物は、モノアルキルアミン又はジアルキルアミンが好適である。モノアルキルアミン又はジアルキルアミンを用いた場合には、得られる上記一般式(4)~(6)で表されるテトラゾール化合物の塩の極性を低極性化でき、光硬化型粘着剤成分との溶解性を高めることができる。より好ましくは、炭素数6~12のモノアルキルアミン又はジアルキルアミンである。
上記光増感剤は、上記気体発生剤への光による刺激を増幅する効果を有することから、より少ない光の照射により気体を放出させることができる。また、より広い波長領域の光により気体を放出させることができる。
耐熱性に優れた光増感剤は、例えば、アルコキシ基を少なくとも1つ以上有する多環芳香族化合物が挙げられる。なかでも、一部がグリシジル基又は水酸基で置換されたアルコキシ基を有する置換アルコキシ多環芳香族化合物が好適である。これらの光増感剤は、耐昇華性が高く、高温下で使用することができる。また、アルコキシ基の一部がグリシジル基や水酸基で置換されることにより、上記光硬化型粘着剤成分への溶解性が高まり、ブリードアウトを防止することができる。
なお、本明細書においてヒュームドシリカの平均粒子径は、レーザー散乱・回折法又は動的光散乱法のいずれかの方法を用いて、配合前のメチルエチルケトン、メチルエチルケトン/トルエン(60:40)溶液等の媒体に分散したヒュームドシリカを測定した粒子径を意味する。
シリコーン化合物は、耐熱性に優れることから、ダイシング工程時に熱が発生しても粘着剤の焦げ付き等を防止し、剥離時には被着体界面にブリードアウトして、剥離を容易にする。シリコーン化合物が上記硬化型粘着剤成分と架橋可能な官能基を有することにより、刺激を与えることにより上記硬化型粘着剤成分と化学反応して硬化型粘着剤成分中に取り込まれることから、被着体にシリコーン化合物が付着して汚染することがない。
上記(メタ)アクリル基と架橋可能な官能基は、不飽和二重結合を有する官能基であり、具体的には例えば、ビニル基、(メタ)アクリル基、アリル基、マレイミド基等が挙げられる。
上記粘着剤層は、可塑剤、樹脂、界面活性剤、ワックス、微粒子充填剤等の公知の添加剤を含有してもよい。
ウエハの表面には、ウエハの表面を保護する目的で、ポリイミド等の樹脂からなるパッシベーション膜が形成されていることがある。このようなウエハの凹凸を有する表面側にダイシングテープを貼付すると、粘着剤層に凸部が食い込み、パッシベーション膜に直接接触することがある。このような状態で加熱を伴う処理を施すウエハ処理工程を行うと、粘着剤層がパッシベーション膜に焦げ付いてしまい、糊残りの原因となりやすい。上記粘着剤層の厚みをウエハの凹凸の高さよりも薄くすることにより、貼付時に粘着剤層がパッシベーション膜に直接接触するのを防ぎ、糊残りの発生をより防止することができる。
このような光硬化型粘着剤成分に対しては、例えば、波長365nmの光を5mW以上の照度で照射することが好ましく、10mW以上の照度で照射することがより好ましく、20mW以上の照度で照射することが更に好ましく、50mW以上の照度で照射することが特に好ましい。また、波長365nmの光を300mJ以上の積算照度で照射することが好ましく、500mJ以上、10000mJ以下の積算照度で照射することがより好ましく、500mJ以上、7500mJ以下の積算照度で照射することが更に好ましく、1000mJ以上、5000mJ以下の積算照度で照射することが特に好ましい。
上記加熱を伴う処理を施すウエハ処理工程は、例えば、ウエハを一定の厚みになるまで研削する研削処理や、スパッタリング、蒸着、エッチング、化学気相成長法(CVD)、物理気相成長法(PVD)、レジスト塗布・パターンニング、リフロー等が挙げられる。
上記ダイシングの方法は特に限定されず、従来公知の砥石等を用いて切断分離する方法等を用いることができる。
ダイシングの際には、削りカスの除去のために、ウエハの表面にイソプロピルアルコール水溶液等の水系有機溶剤を噴射してもよい。上記粘着剤硬化工程において架橋、硬化された粘着剤層は、水系有機溶剤に対しても充分な耐薬品性を発揮することができる。
半導体チップの剥離方法は特に限定されず、従来公知の方法を用いることができる。即ち、得られた半導体チップをダイシングテープ側からニードルで突き上げるニードルピックアップ法でも、ニードルを用いないニードルレスピックアップ法のいずれを用いてもよい。
上記粘着剤硬化工程において架橋、硬化された粘着剤層は弾性率が上昇していることから、容易に、かつ、残渣が付着することなく半導体チップを剥離することができる。また、たとえウエハにダイシングテープを貼付した後に時間が経過していても、ほとんど接着亢進が進むこともない。
例えば、上記気体発生剤として300nm以下の波長の光を照射することにより気体を発生する気体発生剤を用いた場合には、300nm以下の波長の光を照射することにより上記気体発生剤から気体を発生させて、半導体チップをダイシングテープからより容易に剥離することができる。
このような気体発生剤に対しては、例えば、波長254nmの光を5mW以上の照度で照射することが好ましく、10mW以上の照度で照射することがより好ましく、20mW以上の照度で照射することが更に好ましく、50mW以上の照度で照射することが特に好ましい。また、波長254nmの光を1000mJ以上の積算照度で照射することが好ましく、1000mJ以上、20J以下の積算照度で照射することがより好ましく、1500mJ以上、15J以下の積算照度で照射することが更に好ましく、2000mJ以上、10J以下の積算照度で照射することが特に好ましい。
(1)ダイシングテープの調製
温度計、攪拌機、冷却管を備えた反応器を用意し、この反応器内に、(メタ)アクリル酸アルキルエステルとして2-エチルヘキシルアクリレート94重量部、官能基含有モノマーとしてメタクリル酸ヒドロキシエチル6重量部と、ラウリルメルカプタン0.01重量部と、酢酸エチル80重量部を加えた後、反応器を加熱して還流を開始した。続いて、上記反応器内に、重合開始剤として1,1-ビス(t-ヘキシルパーオキシ)-3,3,5-トリメチルシクロヘキサン0.01重量部を添加し、還流下で重合を開始させた。次に、重合開始から1時間後及び2時間後にも、1,1-ビス(t-ヘキシルパーオキシ)-3,3,5-トリメチルシクロヘキサンを0.01重量部ずつ添加し、更に、重合開始から4時間後にt-ヘキシルパーオキシピバレートを0.05重量部添加して重合反応を継続させた。そして、重合開始から8時間後に、固形分55重量%、重量平均分子量60万の官能基含有(メタ)アクリル系ポリマーの酢酸エチル溶液を得た。
得られた官能基含有(メタ)アクリル系ポリマーを含む酢酸エチル溶液の樹脂固形分100重量部に対して、官能基含有不飽和化合物として2-イソシアナトエチルメタクリレート3.5重量部を加えて反応させて光硬化型粘着剤を得た。
得られた粘着剤組成物の酢酸エチル溶液を、片面にコロナ処理を施した厚さ50μmの透明なポリエチレンナフタレートフィルムのコロナ処理面上に、乾燥皮膜の厚さが30μmとなるようにドクターナイフで塗工し、110℃、5分間加熱して塗工溶液を乾燥させた。その後、40℃、3日間静置養生を行い、ダイシングテープを得た。
評価用サンプルとして、光硬化型粘着剤の酢酸エチル溶液を、片面にコロナ処理を施した厚さ50μmの透明なポリエチレンナフタレートフィルムのコロナ処理面上に、乾燥皮膜の厚さが500μmとなるようにドクターナイフで塗工し、110℃、5分間加熱して塗工溶液を乾燥させた後、40℃、3日間静置養生を行った。得られた粘着テープを縦0.6cm、横1.0cmの長方形状に切断して、これを評価用サンプルとした。
次いで、超高圧水銀灯を用いて、365nmの紫外線をテープ表面への照射強度が80mW/cm2となるよう照度を調節して2分間照射して、光硬化型粘着剤成分を架橋、硬化させた。硬化させる前後の評価用サンプルについて、動的粘弾性測定のせん断モード角周波数10Hzで測定を行い、-50℃から300℃まで連続昇温した測定値のうち25℃での貯蔵弾性率の値を得た。
その結果、紫外線照射前における25℃での貯蔵せん断弾性率は1.1×104Pa、紫外線照射後における25℃での貯蔵せん断弾性率は2.3×107Paであった。
ダイシングテープの粘着剤層側の面を、直径20cm、厚さ約100μmのシリコンウエハの表面に貼り付けて積層体を得た。次いで、超高圧水銀灯を用いて、365nmの紫外線をダイシングテープ表面への照射強度が80mW/cm2となるよう照度を調節して1分間照射して、光硬化型粘着剤成分を架橋、硬化させた。
ダイシングテープで補強されたウエハを、砥石等を用いて切断分離する方法によりダイシングして、10mm×10mmの半導体チップを得た。ダイシングの際には、削りカスの除去のために、ウエハの表面にイソプロピルアルコール水溶液を噴射した。ダイシング工程時には、ウエハは充分にダイシングテープに固定されており、位置ずれの発生は全く認められなかった。
ダイシング工程後、得られた半導体チップをダイシングテープ側からニードルで突き上げる方法により剥離した。
得られた全ての半導体チップの表面を、光学顕微鏡を用いて100倍の倍率で観察したが、残渣の付着が認められた半導体チップは全くなかった。
シリコンウエハとして、一方の表面に高さ20μm、幅100μmの溝を有する回路が形成された直径20cm、厚さ約100μmのシリコンウエハを用い、ダイシングテープを該回路面に貼り付けて積層体を得た以外は、実施例1と同様にして半導体チップを製造した。
その結果、ダイシング工程時には、ウエハは充分にダイシングテープに固定されており、位置ずれの発生は全く認められず、得られた全ての半導体チップの表面を、光学顕微鏡を用いて100倍の倍率で観察したが、残渣の付着が認められた半導体チップは全くなかった。
シリコンウエハとして、ポリイミドからなるパッシベーション膜が形成された表面に、高さ80μm電極が形成された直径20cm、厚さ約100μmのシリコンウエハを用い、ダイシングテープを該電極面に貼り付けて積層体を得た以外は、実施例1と同様にして半導体チップを製造した。
その結果、ダイシング工程時には、ウエハは充分にダイシングテープに固定されており、位置ずれの発生は全く認められず、得られた全ての半導体チップの表面を、光学顕微鏡を用いて100倍の倍率で観察したが、残渣の付着が認められた半導体チップは全くなかった。
半導体チップの製造において、光硬化型粘着剤成分を架橋、硬化させた後、ダイシングを行う前に、ダイシングテープで補強されたウエハをリフロー炉に入れて、260℃、6分間の熱処理を合計3回行った以外は、実施例1と同様にして半導体チップを製造した。
その結果、ダイシング工程時には、ウエハは充分にダイシングテープに固定されており、位置ずれの発生は全く認められず、得られた全ての半導体チップの表面を、光学顕微鏡を用いて100倍の倍率で観察したが、残渣の付着が認められた半導体チップは全くなかった。
ダイシング工程前に、紫外線照射を行わずに光硬化型粘着剤成分を架橋、硬化させなかった以外は、実施例1と同様にして半導体チップを製造した。
その結果、ダイシング工程時に、ダイシングテープの粘着力が低下して若干の位置ずれが発生した。また、得られた全ての半導体チップの表面を、光学顕微鏡を用いて100倍の倍率で観察したところ、残渣が付着した半導体チップが認められた。
ウエハに貼着する前にダイシングテープに紫外線を照射して光硬化型粘着剤成分を架橋、硬化させた以外は、実施例2と同様にして半導体チップを製造した。
しかしながら、ダイシングテープが充分にウエハに密着せず、ダイシング工程を行うことができなかった。
シリコンウエハとして、ポリイミドからなるパッシベーション膜が形成された表面に、高さ20μm電極が形成された直径20cm、厚さ約100μmのシリコンウエハを用い、ダイシングテープを該電極面に貼り付けて積層体を得て、ダイシング工程前に、紫外線照射を行わずに光硬化型粘着剤成分を架橋、硬化させなかった以外は、実施例3と同様にして半導体チップを製造した。
その結果、ダイシング工程時に、ダイシングテープの粘着力が低下して若干の位置ずれが発生した。また、得られた全ての半導体チップの表面を、光学顕微鏡を用いて100倍の倍率で観察したところ、残渣が付着した半導体チップが多数認められた。
ダイシング工程前に、紫外線照射を行わずに光硬化型粘着剤成分を架橋、硬化させなかった以外は、実施例4と同様にして半導体チップを製造した。
その結果、ダイシング工程時に、ダイシングテープの粘着力が低下して若干の位置ずれが発生した。また、得られた全ての半導体チップの表面を、光学顕微鏡を用いて100倍の倍率で観察したところ、残渣が付着した半導体チップが多数認められた。
Claims (7)
- 少なくとも、刺激により架橋、硬化する硬化型粘着剤成分を含有する粘着剤層と基材フィルムとからなるダイシングテープを、ウエハに粘着剤層側から貼付して補強するダイシングテープ貼付工程と、
前記粘着剤層に刺激を与えて硬化型粘着剤成分を架橋、硬化する粘着剤層硬化工程と、
前記ダイシングテープにより補強されたウエハをダイシングして半導体チップを得るダイシング工程と、
前記ダイシングテープから半導体チップを剥離する半導体チップ剥離工程を有する
ことを特徴とする半導体チップの製造方法。 - ウエハは、片面粘着テープを貼付する側の表面に高さ20μm以上の凹凸があることを特徴とする請求項1記載の半導体チップの製造方法。
- ダイシングテープの粘着剤層の厚みがウエハの凹凸の高さよりも薄いものであることを特徴とする請求項2記載の半導体チップの製造方法。
- ダイシングテープ貼付工程前における粘着剤層について動的粘弾性測定のせん断モードで-50℃から300℃まで連続昇温の条件で測定した25℃での貯蔵せん断弾性率が1.0×102~2.0×105Paであり、かつ、粘着剤層硬化工程後における粘着剤層について動的粘弾性測定のせん断モードで-50℃から300℃まで連続昇温の条件で測定した25℃での貯蔵せん断弾性率が2.0×105~1.0×109Paであることを特徴とする請求項1、2又は3記載の半導体チップの製造方法。
- 粘着剤層硬化工程後、ダイシング工程前に、ダイシングテープにより補強されたウエハに加熱を伴う処理を施すウエハ処理工程を有することを特徴とする請求項1、2、3又は4記載の半導体チップの製造方法。
- 硬化型粘着剤成分を架橋、硬化する刺激が紫外線であることを特徴とする請求項1、2、3、4又は5記載の半導体チップの製造方法。
- 粘着剤層は、更に刺激により気体を発生する気体発生剤を含むものであって、半導体チップ剥離工程において刺激を与えて気体発生剤から気体を発生させることを特徴とする請求項1、2、3、4、5又は6記載の半導体チップの製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020237034033A KR102652507B1 (ko) | 2015-02-09 | 2016-02-09 | 반도체 칩의 제조 방법 |
JP2016522834A JPWO2016129577A1 (ja) | 2015-02-09 | 2016-02-09 | 半導体チップの製造方法 |
KR1020177001752A KR20170110565A (ko) | 2015-02-09 | 2016-02-09 | 반도체 칩의 제조 방법 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015023394 | 2015-02-09 | ||
JP2015023392 | 2015-02-09 | ||
JP2015-023394 | 2015-02-09 | ||
JP2015-023392 | 2015-02-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016129577A1 true WO2016129577A1 (ja) | 2016-08-18 |
Family
ID=56615245
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/053751 WO2016129577A1 (ja) | 2015-02-09 | 2016-02-09 | 半導体チップの製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPWO2016129577A1 (ja) |
KR (2) | KR102652507B1 (ja) |
TW (1) | TWI689565B (ja) |
WO (1) | WO2016129577A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019054123A (ja) * | 2017-09-15 | 2019-04-04 | 協立化学産業株式会社 | チップの表面加工方法及びゲル状組成物 |
JP2021015814A (ja) * | 2016-11-08 | 2021-02-12 | エルジー・ケム・リミテッド | 負極及び該負極の製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114382712A (zh) * | 2021-12-16 | 2022-04-22 | 西安电子工程研究所 | 一种实现风机快速、全面防盐雾处理的方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1126406A (ja) * | 1997-07-01 | 1999-01-29 | Lintec Corp | ウエハ研削方法 |
JP2003064329A (ja) * | 2001-08-30 | 2003-03-05 | Nitto Denko Corp | エネルギー線硬化型熱剥離性粘着シート、これを用いた切断片の製造方法、及びその切断片 |
JP2004281526A (ja) * | 2003-03-13 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2005191405A (ja) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Ind Co Ltd | チップ形電子部品の製造方法 |
JP2008060151A (ja) * | 2006-08-29 | 2008-03-13 | Nitto Denko Corp | 半導体ウエハ裏面加工方法、基板裏面加工方法、及び放射線硬化型粘着シート |
JP2010150432A (ja) * | 2008-12-25 | 2010-07-08 | Furukawa Electric Co Ltd:The | マスキング用剥離性粘着テープ |
JP2012031417A (ja) * | 2011-09-05 | 2012-02-16 | Mitsubishi Plastics Inc | 離型フィルム付中間膜用粘着シート及び透明積層体 |
JP2014015521A (ja) * | 2012-07-06 | 2014-01-30 | Furukawa Electric Co Ltd:The | 半導体ウェハ表面保護用粘着テープおよびそれを用いた半導体ウェハの製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3754830A (en) * | 1971-10-21 | 1973-08-28 | Science Spectrum | Scattering cell employing electrostatic means for supporting a particle |
JPH0778793A (ja) | 1993-06-21 | 1995-03-20 | Toshiba Corp | 半導体ウェーハの研削加工方法 |
KR0156695B1 (ko) * | 1994-06-28 | 1999-01-15 | 윤종용 | 공기조화기의 운전제어방법 |
JP5513866B2 (ja) * | 2009-12-11 | 2014-06-04 | リンテック株式会社 | 電子部品加工用粘着シート |
KR102132592B1 (ko) * | 2012-11-05 | 2020-07-10 | 린텍 가부시키가이샤 | 점착 시트 |
-
2016
- 2016-02-09 JP JP2016522834A patent/JPWO2016129577A1/ja active Pending
- 2016-02-09 KR KR1020237034033A patent/KR102652507B1/ko active IP Right Grant
- 2016-02-09 KR KR1020177001752A patent/KR20170110565A/ko not_active Application Discontinuation
- 2016-02-09 WO PCT/JP2016/053751 patent/WO2016129577A1/ja active Application Filing
- 2016-02-15 TW TW105104257A patent/TWI689565B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1126406A (ja) * | 1997-07-01 | 1999-01-29 | Lintec Corp | ウエハ研削方法 |
JP2003064329A (ja) * | 2001-08-30 | 2003-03-05 | Nitto Denko Corp | エネルギー線硬化型熱剥離性粘着シート、これを用いた切断片の製造方法、及びその切断片 |
JP2004281526A (ja) * | 2003-03-13 | 2004-10-07 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JP2005191405A (ja) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Ind Co Ltd | チップ形電子部品の製造方法 |
JP2008060151A (ja) * | 2006-08-29 | 2008-03-13 | Nitto Denko Corp | 半導体ウエハ裏面加工方法、基板裏面加工方法、及び放射線硬化型粘着シート |
JP2010150432A (ja) * | 2008-12-25 | 2010-07-08 | Furukawa Electric Co Ltd:The | マスキング用剥離性粘着テープ |
JP2012031417A (ja) * | 2011-09-05 | 2012-02-16 | Mitsubishi Plastics Inc | 離型フィルム付中間膜用粘着シート及び透明積層体 |
JP2014015521A (ja) * | 2012-07-06 | 2014-01-30 | Furukawa Electric Co Ltd:The | 半導体ウェハ表面保護用粘着テープおよびそれを用いた半導体ウェハの製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021015814A (ja) * | 2016-11-08 | 2021-02-12 | エルジー・ケム・リミテッド | 負極及び該負極の製造方法 |
JP7086410B2 (ja) | 2016-11-08 | 2022-06-20 | エルジー エナジー ソリューション リミテッド | 負極及び該負極の製造方法 |
JP2019054123A (ja) * | 2017-09-15 | 2019-04-04 | 協立化学産業株式会社 | チップの表面加工方法及びゲル状組成物 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2016129577A1 (ja) | 2017-11-16 |
TW201639938A (zh) | 2016-11-16 |
KR102652507B1 (ko) | 2024-03-28 |
KR20230147744A (ko) | 2023-10-23 |
TWI689565B (zh) | 2020-04-01 |
KR20170110565A (ko) | 2017-10-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5130405B2 (ja) | 粘着剤組成物、粘着テープ、及び、ウエハの処理方法 | |
JP6212450B2 (ja) | ウエハの処理方法 | |
JP2006216721A (ja) | 半導体ウエハ研削用粘着シート及び半導体ウエハの研削方法 | |
JP6170401B2 (ja) | ウエハの処理方法 | |
JP2017125093A (ja) | 半導体保護テープ及びウエハの処理方法 | |
US20050173051A1 (en) | Adhesive material, method for peeling adhesive material, and pressure-sensitive adhesive tape | |
WO2016129577A1 (ja) | 半導体チップの製造方法 | |
JP2014019790A (ja) | 粘着剤組成物、粘着テープ、及び、ウエハの処理方法 | |
JP2013231159A (ja) | 粘着剤組成物、粘着テープ、及び、ウエハの処理方法 | |
JP6266993B2 (ja) | ウエハの処理方法 | |
JP5946708B2 (ja) | 粘着テープ | |
JP2014012769A (ja) | 粘着剤組成物、粘着テープ、及び、ウエハの処理方法 | |
JP2018147990A (ja) | Taikoウエハの処理方法 | |
JP5678228B1 (ja) | 回路基板の処理方法及び硬化型接着剤組成物 | |
JP6564325B2 (ja) | ウエハの処理方法 | |
JP6285738B2 (ja) | ウエハの処理方法 | |
JP2018060964A (ja) | 半導体装置の製造方法 | |
JP2016128546A (ja) | 粘着剤組成物、粘着テープ、及び、ウエハの処理方法 | |
JP6126722B2 (ja) | 粘着テープ | |
JP2017082094A (ja) | 半導体加工用両面粘着テープ | |
JP2016144913A (ja) | 金属を蒸着した基板の製造方法及び粘着剤組成物 | |
JP2018147989A (ja) | パワーデバイスの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ENP | Entry into the national phase |
Ref document number: 2016522834 Country of ref document: JP Kind code of ref document: A |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16749221 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20177001752 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 16749221 Country of ref document: EP Kind code of ref document: A1 |