WO2016114028A1 - Matériau conducteur, procédé de connexion utilisant celui-ci et structure de connexion - Google Patents

Matériau conducteur, procédé de connexion utilisant celui-ci et structure de connexion Download PDF

Info

Publication number
WO2016114028A1
WO2016114028A1 PCT/JP2015/083984 JP2015083984W WO2016114028A1 WO 2016114028 A1 WO2016114028 A1 WO 2016114028A1 JP 2015083984 W JP2015083984 W JP 2015083984W WO 2016114028 A1 WO2016114028 A1 WO 2016114028A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal
conductive material
alloy
layer
connection
Prior art date
Application number
PCT/JP2015/083984
Other languages
English (en)
Japanese (ja)
Inventor
中野公介
高岡英清
部田武志
國母大翼
新美潤
安達雅浩
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Publication of WO2016114028A1 publication Critical patent/WO2016114028A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C13/00—Alloys based on tin
    • C22C13/02—Alloys based on tin with antimony or bismuth as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits

Definitions

  • the present invention relates to a conductive material, a connection method using the same, and a connection structure, and more specifically, for example, a conductive material used for mounting electronic parts, via connection, and the like, and a connection method using the same, and , Connection structure.
  • Solder is widely used as a conductive material used for mounting electronic components.
  • the high temperature series solder for example, Pb-rich Pb-5Sn (melting point: 314 to 310 ° C.), Pb-10 Sn (melting point: 302 to 275 ° C.), etc.
  • soldering at a temperature below the melting point of the high temperature solder using, for example, Sn-37Pb eutectic (183 ° C.) of a low temperature solder. Therefore, a method of temperature hierarchical connection in which connection by soldering is performed without melting the high-temperature solder used for the previous soldering has been widely applied.
  • Such a temperature hierarchy connection is applied to, for example, a semiconductor device of a die-bonding type chip or a semiconductor device such as a flip chip connection, and after performing connection by soldering inside the semiconductor device, This is an important technique used when the semiconductor device itself is connected to a substrate by soldering.
  • Patent Document 1 discloses that a first metal (low melting point metal) and a melting point higher than that of the first metal react with the first metal to generate an intermetallic compound.
  • a conductive material that is an Ni alloy and that generates an intermetallic compound in which the first metal and the second metal have a melting point of 310 ° C. or higher has been proposed.
  • the first metal and the second metal react efficiently, the change to a higher melting point intermetallic compound is promoted, and the low melting point component does not remain,
  • the conductive material of Patent Document 1 is used as a solder paste, it is said that a connection with high heat resistance can be made.
  • the present invention solves the above-mentioned problem, it is possible to reliably react a first metal and a second metal having a melting point higher than that of the first metal, thereby generating a high melting point intermetallic compound, Conductive material capable of realizing highly reliable electronic component mounting and via connection when used for mounting electronic components and via connections, and a connection method with high connection reliability using the same, and An object is to provide a connection structure.
  • the conductive material of the present invention is A conductive material comprising a first metal and a second metal having a melting point higher than that of the first metal,
  • the first metal is Sn or an alloy containing Sn
  • the second metal is at least one selected from the group consisting of a Cu—Mn alloy, a Cu—Ni alloy, a Cu—Al alloy, and a Cu—Cr alloy
  • the second metal has a layer containing Ag or Au on its surface, and The first metal and the second metal generate an intermetallic compound having a melting point of 310 ° C. or higher.
  • the average particle diameter of the second metal in a state where the second metal does not have the layer containing Ag or Au is 10 ⁇ m or less.
  • the average particle size of the second metal is 10 ⁇ m or less, the specific surface area is increased and the reactivity with the first metal is improved, but the influence of surface oxidation tends to be increased.
  • the surface of the second metal has a layer containing Ag or Au, the reactivity of the first metal and the second metal is reduced due to the oxidation of the surface of the second metal. Therefore, it is possible to obtain a conductive material having excellent reactivity between the first metal and the second metal.
  • the thickness of the layer containing Ag or Au on the surface of the second metal is 10 nm or more and 220 nm or less.
  • the thickness of the layer containing Ag or Au on the surface of the second metal in the range of 10 nm or more and 220 nm or less, the use amount of the Ag-based material or Au-based material is suppressed, and the surface of the second metal is While suppressing oxidation, it becomes possible to secure the ease of wetting of the surface of the second metal with respect to the molten first metal, and the present invention can be made more effective.
  • the conductive material of the present invention preferably contains a flux component.
  • the flux component By including the flux component, it becomes possible to efficiently remove the oxide film on the surface of the metal material to be bonded, and perform highly reliable bonding.
  • various known materials composed of, for example, a vehicle, a solvent, a thixotropic agent, and an activator can be used as the flux.
  • the first metal is Sn or an alloy containing 70 wt% or more of Sn.
  • the ratio of the said 2nd metal in all the metal components is 30 volume% or more.
  • the first metal may be Sn alone, or Cu, Ni, Ag, Au, Sb, Zn, Bi, In, Ge, Al, Co, Mn, Fe, Cr, Mg, Pd, Si, Sr, Te.
  • P is preferably an alloy containing Sn and at least one selected from the group consisting of P.
  • the second metal includes a Cu—Mn alloy in which the proportion of Mn in the second metal is 10 wt% or more and 15 wt% or less, the proportion of Ni in the second metal is 10 wt% or more, 15 A Cu—Ni alloy having a weight percentage of 10% or less, a Cu—Al alloy having a ratio of Al in the second metal of 10% by weight or more and 15% by weight or less, or a ratio of Cr in the second metal of 10% by weight. It is preferable that the Cu-Cr alloy is not less than 15% and not more than 15% by weight.
  • connection method of the present invention includes: A method for connecting an object to be connected using a conductive material, wherein the first metal component and the second metal constituting the conductive material are heated to form a metal using the conductive material of the present invention. It is characterized by connecting the connection object as an intermetallic compound.
  • connection structure of the present invention is The connection object is a connection structure connected using the conductive material of the present invention.
  • the conductive material of the connection part that connects the connection object is mainly composed of the second metal derived from the conductive material and an intermetallic compound containing the second metal and Sn.
  • the ratio of the first metal derived from the conductive material to the entire metal component is 30% by volume or less.
  • the conductive material of the present invention includes a first metal and a second metal having a melting point higher than that of the first metal.
  • the first metal is Sn or an alloy containing Sn.
  • the second metal is a Cu—Mn alloy, Cu -Ni alloy, Cu-Al alloy, and Cu-Cr alloy, and the second metal has a layer containing Ag or Au on its surface, the first metal, Since metal generates an intermetallic compound having a melting point of 310 ° C. or higher, when used for mounting electronic components or via connections, highly reliable mounting of electronic components or via connections is required. It becomes possible to provide a conductive material that can be realized.
  • the surface of the second metal since the surface of the second metal has a layer containing Ag or Au, the surface of the second metal is hardly oxidized and the surface of the second metal is melted. The first metal is easily wetted and the reaction area increases. Further, after the layer containing Ag or Au on the surface of the second metal gets wet with the molten first metal (Sn or the like), it does not remain at the interface but diffuses into the molten first metal (Sn or the like). Thus, by dispersing, the expected reaction can be realized without inhibiting the reaction between the second metal and the first metal, which is necessary for producing the intermetallic compound.
  • the electrode included in the electronic component by using the conductive material of the present invention for joining the electrodes included in the electronic component and the land electrode on the printed circuit board (mounting substrate) on which the electronic component is mounted, the electrode included in the electronic component In addition, it is possible to reliably bond the land electrode on the mounting substrate via the high melting point intermetallic compound, and it is possible to realize highly reliable bonding.
  • “having a layer containing Ag or Au on the surface of the second metal” means that a layer containing Ag or Au is provided on at least a part of the surface of the second metal. This means that the entire surface of the second metal is covered with a layer containing Ag or Au. However, the present invention does not exclude an aspect in which the entire surface of the second metal is covered with a layer containing Ag or Au.
  • examples of the layer containing Ag and the layer containing Au include an Ag layer, an Au layer, an Ag alloy layer, an Au alloy layer, and the like.
  • the Ag alloy and the Au alloy are alloys containing Ag and Au as a main component.
  • these Ag, Au, Ag alloy, and Au alloy are metals or alloys that are easily wetted by the molten first metal, and are easily diffused into the first metal. It is only necessary to satisfy the requirement that it does not remain, and it is also possible to use alloys other than the alloys exemplified above.
  • connection method of the present invention is a method of connecting an object to be connected using a conductive material, the first metal component and the second metal constituting the conductive material by heating using the conductive material of the present invention. Since the metal and the intermetallic compound are used to connect the objects to be connected, it is possible to reliably perform highly reliable joining.
  • connection structure of the present invention is a connection structure in which a connection object is connected using the conductive material of the present invention, and the conductive material of the connection portion connecting the connection objects is a conductive material.
  • the main component is the second metal derived from the metal and the intermetallic compound containing the second metal and Sn, and the ratio of the first metal derived from the conductive material to the total metal component is 30% by volume or less.
  • the present invention when the present invention is applied to bonding of an electronic component and a land pattern on a mounting board such as a printed board, when reflow is performed at a stage after the electronic component is mounted, Even when the mounted electronic component is used in a high-temperature environment, for example, it is possible to realize excellent bonding that can prevent the electronic component from falling off the mounting substrate.
  • Embodiment 1 In Embodiment 1, a conductive material was produced by mixing a powdered first metal (first metal powder), a powdered second metal (second metal powder), and a flux.
  • the mixing ratio of the first metal powder and the second metal powder was adjusted so that the volume ratio of the first metal powder / second metal powder was 60/40 (that is, the second metal was 40% by volume).
  • Sn-3Ag-0.5Cu was used as shown in Table 1.
  • the average particle size of the first metal powder was 5 ⁇ m.
  • the number 3.5 of “Sn-3.5Ag” represents the value by weight of the component (in this case, Ag), and the other materials described above and The same applies to the following description.
  • the second metal powder includes Cu-10Ni alloy powder, Cu-10Mn alloy powder, Cu-10Al alloy powder, Cu-10Cr alloy powder, and Cu-10Ni alloy and Cu-10Mn alloy. Quantity mixed powder was used.
  • the thickness of the Ag layer and the Au layer was determined by observing the central cross section of the second metal powder having the Ag layer and the Au layer using STEM / EDX (HD-2300A / EDAX Genesis XM4, manufactured by Hitachi High-Technologies) The value obtained by dividing the area of the Ag layer and Au layer by the average perimeter of the second metal powder was taken as the thickness of the Ag layer or Au layer.
  • the average perimeter of the second metal powder refers to the perimeter of the second metal powder before the Ag layer or Au layer is applied to the surface and the second metal powder after the Ag layer or Au layer is applied to the surface. This is the average value of the perimeter of.
  • the average particle size of the second metal powder was 5 ⁇ m.
  • the average particle diameter in this case indicates the average particle diameter of the second metal powder before coating.
  • the average particle diameter is represented by the median diameter (D 50 ) when analyzed using Microtrac Microtrac MT3300EX II (Microtrac Bell).
  • ⁇ Method of applying a layer containing Ag or Au to the surface of the second metal powder Next, a method for providing a layer containing Ag or Au on the surface of the second metal powder will be described. First, the surface oxygen concentration of each second metal powder is set to 1000 ppm or less using an oxide film removing agent. Thereafter, Ag or Au is adhered to the surface of each second metal powder by electroless plating. Thereby, a layer containing Ag or Au is formed on the surface of the second metal powder.
  • the Ag layer and the Au layer on the surface of the second metal powder were formed to have a thickness of about 100 nm.
  • the thicknesses of the Ag layer and the Au layer are obtained by the same method as in the second embodiment.
  • the layer containing Ag or Au may not be formed so as to cover the entire surface of the second metal powder, but the case where the layer containing Ag or Au is formed so as to cover the whole is excluded. Not what you want. If a layer containing Ag or Au is formed in a substantial portion of the surface of the second metal powder, the molten first metal reacts with the layer containing Ag or Au on the surface of the second metal powder, The surface of the second metal powder that has not been oxidized in the region of the surface of the second metal powder that has been removed by diffusing into the molten first metal and covered with the layer containing Ag or Au. And the molten first metal reacts rapidly.
  • the flux has a blending ratio of rosin: 74% by weight, diethylene glycol monobutyl ether: 22% by weight, triethanolamine: 2% by weight, and hydrogenated castor oil 2% by weight. A thing was used.
  • the blending ratio of the flux was set such that the ratio of the flux in the entire conductive material was 10% by weight.
  • the conductive material produced as described above was printed on an oxygen-free Cu plate having a size of 10 mm ⁇ 10 mm and a thickness of 0.2 mm using a metal mask.
  • the metal mask had an opening diameter of 1.5 mm ⁇ 1.5 mm and a thickness of 100 ⁇ m.
  • the conductive material is substantially used as a solder paste.
  • shear strength was measured under the conditions of lateral pressing speed: 0.1 mm ⁇ s ⁇ 1 , room temperature, and 260 ° C. Table 1 shows the measurement results of bonding strength (shear strength).
  • Residual component evaluation (measurement of residual first component ratio) About 7 mg of the reaction product was sampled from the joint between the Cu plate and the brass terminal, and was differentially measured under the conditions of a measurement temperature of 30 ° C. to 300 ° C., a heating rate of 5 ° C./min, an N 2 atmosphere, and a reference Al 2 O 3 Scanning calorimetry (DSC measurement) was performed.
  • the amount of the first metal component remaining was quantified from the endothermic amount of the melting endothermic peak at the melting temperature of the first metal component of the obtained DSC chart.
  • Table 1 shows the residual first metal component ratio (content ratio of the first metal component in the joint).
  • the printed circuit board After reflowing at a peak temperature of 250 ° C and joining the Cu land and ceramic capacitor (after soldering), the printed circuit board is sealed with epoxy resin and left in an environment at a temperature of 85 ° C and a relative humidity of 85% for 48 hours. And then heated under reflow conditions with a peak temperature of 260 ° C. Then, the ratio of the sample in which the flow of the conductive material (solder) was recognized to the 100 samples subjected to the test (flowing rate) was examined and evaluated as the flow-out defect rate. Table 1 also shows the flow-out defect rate of the conductive material.
  • each sample of Comparative Examples 1 to 5 exceeded 10% by volume, whereas each sample of Examples 1 to 7 was 10% by volume or less. It was.
  • each sample of Comparative Examples 1 to 5 was 50% or more, whereas in each sample of Examples 1 to 7, the flow-out failure rate was 0%. It was confirmed that there was no flow-out defect rate even with the sample.
  • the second metal powder is Cu—Ni alloy powder, Cu—Mn alloy powder, Cu—Al alloy powder, Cu— In any case of the Cr alloy powder, and when the second metal powder is a mixed powder of two or more kinds (a mixed powder of Cu—Mn alloy and Cu—Ni alloy), the bonding strength and the residual first Good results were obtained for both the metal component rate and the flow-out defect rate, and it was confirmed that high heat resistance was ensured.
  • the samples of Examples 1 to 7 having the requirements of the present invention have high heat resistance because the second metal powder is Cu—Ni alloy, Cu—Mn alloy, Cu—Al alloy, Cu— Since the Cr alloy is used and the second metal powder has a layer containing Ag or Au (Ag layer or Au layer in the first embodiment) on the surface thereof, the surface of the second metal is oxidized. Is suppressed, and a state in which the molten first metal is easily wetted is ensured. Therefore, the first metal and the second metal react efficiently, and the generation of a high melting point intermetallic compound becomes remarkable. Conceivable.
  • Embodiment 2 In Embodiment 2, as shown in Table 2, Sn-3Ag-0.5Cu was used as the first metal powder. In the second embodiment, the average particle size of the first metal powder is 5 ⁇ m.
  • the second metal powder was a Cu-10Ni alloy powder and the surface thereof was provided with a layer containing Ag.
  • the second metal powder one having an average particle diameter of 5 ⁇ m was used.
  • the average particle diameter of 2nd metal powder here is the average particle diameter of 2nd metal powder in the state which is not equipped with the above-mentioned Ag layer.
  • the thickness of the Ag layer provided on the surface of the second metal powder was varied in the range of 5 nm to 298 nm.
  • the thickness of the Ag layer is determined using the STEM / EDX (HD-2300A / EDAX Genesis XM4, manufactured by Hitachi High-Technologies Corp.) and the central cross section of the second metal powder having the Ag layer. The value obtained by observing and dividing the area of the Ag layer portion by the average perimeter of the second metal powder was taken as the thickness of the Ag layer.
  • a conductive material was manufactured under the same conditions as in the first embodiment. And about the produced electroconductive material, by the same method as the case of the said Embodiment 1, (1) Measurement of joint strength, (2) Residual component evaluation (measurement of residual 1st component ratio), (3) Conductive material Flow out evaluation (measurement of flow out defective rate) was performed. The results are shown in Table 2.
  • the underlying metal (second metal) is oxidized and wetted by the molten first metal due to the influence thereof.
  • the reactivity with the first metal are adversely affected, and there is a tendency for the characteristics to decrease with respect to the bonding strength at 260 ° C. relative to the bonding strength at room temperature, and the residual first metal component ratio and the outflow defect ratio. Admitted.
  • the layer having Ag or Au on the surface of the second metal powder (Ag layer in the second embodiment) is too thick, the layer having Ag or Au covering the second metal powder (Ag layer in the second embodiment) ) Is likely to hinder the reaction between the first metal and the second metal.
  • Embodiment 3 In Embodiment 3, as shown in Table 3, Sn-3Ag-0.5Cu was prepared as the first metal powder. In the third embodiment, the average particle diameter of the first metal powder is 5 ⁇ m.
  • the second metal powder was a Cu-10Ni alloy powder, and the surface thereof was provided with a layer containing Ag or Au.
  • the second metal powder one having an average particle diameter of 5, 10, 14 ⁇ m was used as shown in Table 3.
  • the average particle size of the second metal powder here is the average particle size of the second metal powder in the state where the Ag layer and the Au layer are not provided.
  • the average particle diameter is a value represented by the median diameter (D 50 ) when analyzed using Microtrac Microtrac MT3300EX II (Microtrac Bell).
  • the Ag layer and the Au layer on the surface of the second metal powder were formed to have a thickness of about 100 nm.
  • the thicknesses of the Ag layer and the Au layer are obtained by the same method as in the second embodiment.
  • each conductive material was produced by mixing the above-mentioned 1st metal powder whose average particle diameter is 5 micrometers, the 2nd metal powder which has an average particle diameter as shown in Table 3, and a flux.
  • the mixing ratio of the first metal powder and the second metal powder was adjusted so that the volume ratio of the first metal powder / second metal powder was 60/40 (that is, the second metal was 40% by volume).
  • the layer containing Ag or Au formed on the surface of the second metal powder is an Ag layer or an Au layer
  • the layer containing Ag or Au is An Ag alloy layer, an Au alloy layer, or the like may be used.
  • the layer containing Ag or Au used in the conductive material of the present invention is a layer made of a metal or an alloy that easily diffuses into the first metal and easily wets the molten first metal, and is a surface of the second metal. It is desirable to use a metal material that hardly remains, and various Ag alloys and Au alloys containing Ag and Au as main components can be used as long as they have such requirements.
  • the Ag alloy or Au alloy at least one kind of Ag or Au and, for example, Bi, Cd, Cu, Fe, Ni, Co, Ga, Ge, In, Pd, Sb, Sn, Zn, and the like is used. In some cases, other alloys can be used.
  • the present invention is not limited to the above-described embodiments, and the types and compositions of the first metal and the second metal constituting the conductive material, the blending ratio of the first metal and the second metal, the components of the flux and the flux Various applications and modifications can be made within the scope of the invention with respect to the blending ratio and the like.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

L'invention concerne: un matériau conducteur pouvant former un composé intermétallique présentant un point de fusion élevé en faisant réagir de manière fiable un premier métal avec un second métal qui présente un point de fusion plus élevé que celui du premier métal, et qui permet d'obtenir un montage très fiable d'un composant électronique ou d'une connexion traversante s'il est utilisé pour le montage d'un composant électronique ou d'une connexion traversante; un procédé de connexion présentant une fiabilité de connexion élevée qui utilise ce matériau conducteur; et une structure de connexion. L'invention concerne un matériau conducteur qui contient un premier métal et un second métal qui présente un point de fusion plus élevé que celui du premier métal, et qui est configuré de manière à satisfaire les exigences suivantes: le premier métal est du Sn ou un alliage contenant du Sn; le second métal est au moins un alliage choisi dans le groupe composé d'alliages Cu-Mn, d'alliages Cu-Ni, d'alliages Cu-Al et d'alliages Cu-Cr; le second métal présente une couche contenant de l'Ag ou de l'Au sur la surface; et le premier métal et le second métal forment un composé intermétallique présentant un point de fusion égal ou supérieur à 310°C.
PCT/JP2015/083984 2015-01-16 2015-12-03 Matériau conducteur, procédé de connexion utilisant celui-ci et structure de connexion WO2016114028A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-006601 2015-01-16
JP2015006601 2015-01-16

Publications (1)

Publication Number Publication Date
WO2016114028A1 true WO2016114028A1 (fr) 2016-07-21

Family

ID=56405584

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/083984 WO2016114028A1 (fr) 2015-01-16 2015-12-03 Matériau conducteur, procédé de connexion utilisant celui-ci et structure de connexion

Country Status (1)

Country Link
WO (1) WO2016114028A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107419132A (zh) * 2017-06-22 2017-12-01 安徽晋源铜业有限公司 一种引线框用铜镍硅合金材料及其制备方法
CN111593228A (zh) * 2020-05-25 2020-08-28 有研工程技术研究院有限公司 一种香槟金色铜合金材料及其制备方法
CN111910101A (zh) * 2020-07-14 2020-11-10 中南大学 一种高纯度高强高导铜基靶材及其制备方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011251329A (ja) * 2010-06-04 2011-12-15 Sumitomo Metal Mining Co Ltd 高温鉛フリーはんだペースト
WO2012066795A1 (fr) * 2010-11-19 2012-05-24 株式会社村田製作所 Matière conductrice de l'électricité, procédé d'assemblage avec cette matière et structure assemblée
JP2012174332A (ja) * 2011-02-17 2012-09-10 Fujitsu Ltd 導電性接合材料、導体の接合方法、及び半導体装置の製造方法
WO2013038816A1 (fr) * 2011-09-16 2013-03-21 株式会社村田製作所 Matériau électroconducteur, procédé et structure de liaison l'utilisant
WO2013038817A1 (fr) * 2011-09-16 2013-03-21 株式会社村田製作所 Matériau électroconducteur, et procédé de liaison et structure de liaison utilisant celui-ci
WO2013132954A1 (fr) * 2012-03-05 2013-09-12 株式会社村田製作所 Procédé de liaison, structure de liaison et procédé de fabrication associé
JP2014038909A (ja) * 2012-08-13 2014-02-27 Koki:Kk 部品実装基板およびその製造方法
JP2014180690A (ja) * 2013-03-19 2014-09-29 Nippon Steel Sumikin Materials Co Ltd シート状高温はんだ接合材およびこれを用いたダイボンディング方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011251329A (ja) * 2010-06-04 2011-12-15 Sumitomo Metal Mining Co Ltd 高温鉛フリーはんだペースト
WO2012066795A1 (fr) * 2010-11-19 2012-05-24 株式会社村田製作所 Matière conductrice de l'électricité, procédé d'assemblage avec cette matière et structure assemblée
JP2012174332A (ja) * 2011-02-17 2012-09-10 Fujitsu Ltd 導電性接合材料、導体の接合方法、及び半導体装置の製造方法
WO2013038816A1 (fr) * 2011-09-16 2013-03-21 株式会社村田製作所 Matériau électroconducteur, procédé et structure de liaison l'utilisant
WO2013038817A1 (fr) * 2011-09-16 2013-03-21 株式会社村田製作所 Matériau électroconducteur, et procédé de liaison et structure de liaison utilisant celui-ci
WO2013132954A1 (fr) * 2012-03-05 2013-09-12 株式会社村田製作所 Procédé de liaison, structure de liaison et procédé de fabrication associé
JP2014038909A (ja) * 2012-08-13 2014-02-27 Koki:Kk 部品実装基板およびその製造方法
JP2014180690A (ja) * 2013-03-19 2014-09-29 Nippon Steel Sumikin Materials Co Ltd シート状高温はんだ接合材およびこれを用いたダイボンディング方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107419132A (zh) * 2017-06-22 2017-12-01 安徽晋源铜业有限公司 一种引线框用铜镍硅合金材料及其制备方法
CN111593228A (zh) * 2020-05-25 2020-08-28 有研工程技术研究院有限公司 一种香槟金色铜合金材料及其制备方法
CN111593228B (zh) * 2020-05-25 2021-09-03 有研工程技术研究院有限公司 一种香槟金色铜合金材料及其制备方法
CN111910101A (zh) * 2020-07-14 2020-11-10 中南大学 一种高纯度高强高导铜基靶材及其制备方法

Similar Documents

Publication Publication Date Title
JP6842500B2 (ja) 無鉛ソルダーペースト及びその製造方法
JP4753090B2 (ja) はんだペースト、及び電子装置
TWI628030B (zh) 焊膏及焊接接頭
JP5045673B2 (ja) 機能部品用リッドとその製造方法
JP5664664B2 (ja) 接合方法、電子装置の製造方法、および電子部品
JP5018978B1 (ja) 導電性材料、それを用いた接続方法、および接続構造
JP5943066B2 (ja) 接合方法および接合構造体の製造方法
WO2013038817A1 (fr) Matériau électroconducteur, et procédé de liaison et structure de liaison utilisant celui-ci
WO2013038816A1 (fr) Matériau électroconducteur, procédé et structure de liaison l'utilisant
WO2013132942A1 (fr) Procédé de liaison, structure de liaison et son procédé de fabrication
JP2014223678A5 (fr)
WO2015125855A1 (fr) Alliage de soudure sans plomb, matériau de soudure et structure assemblée
JP2018511482A (ja) 混成合金ソルダペースト
WO2016114028A1 (fr) Matériau conducteur, procédé de connexion utilisant celui-ci et structure de connexion
JP3782743B2 (ja) ハンダ用組成物、ハンダ付け方法および電子部品
JP2003112285A (ja) ソルダーペースト
JP2017087248A (ja) はんだペースト組成物
JP2000286542A (ja) 半田付け方法及び半田付け基材
WO2016157971A1 (fr) Pâte à braser
JP2017148862A (ja) はんだペースト

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15877979

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

NENP Non-entry into the national phase

Ref country code: JP

122 Ep: pct application non-entry in european phase

Ref document number: 15877979

Country of ref document: EP

Kind code of ref document: A1