WO2016111761A1 - System and method for dynamically biasing oscillators for optimum phase noise - Google Patents

System and method for dynamically biasing oscillators for optimum phase noise Download PDF

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Publication number
WO2016111761A1
WO2016111761A1 PCT/US2015/061877 US2015061877W WO2016111761A1 WO 2016111761 A1 WO2016111761 A1 WO 2016111761A1 US 2015061877 W US2015061877 W US 2015061877W WO 2016111761 A1 WO2016111761 A1 WO 2016111761A1
Authority
WO
WIPO (PCT)
Prior art keywords
gate
electrically coupled
mos device
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2015/061877
Other languages
English (en)
French (fr)
Inventor
Mazhareddin Taghivand
Keplin Victor JOHANSEN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Priority to CN201580072692.3A priority Critical patent/CN107112948A/zh
Priority to EP15805682.0A priority patent/EP3243272A1/en
Priority to JP2017536247A priority patent/JP2018506894A/ja
Publication of WO2016111761A1 publication Critical patent/WO2016111761A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H03B5/1209—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier having two current paths operating in a differential manner and a current source or degeneration circuit in common to both paths, e.g. a long-tailed pair.
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
    • H03B5/1265—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements switched capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1275—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency
    • H03B5/129—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator having further means for varying a parameter in dependence on the frequency the parameter being a bias voltage or a power supply

Definitions

  • the apparatus can have a resonating means for storing energy at a resonant frequency.
  • the resonating means can have and at least one inductor and at least one capacitor.
  • the apparatus can also have a variable capacitance means having a first end and a second end, the first end and the second end being electrically coupled to the resonating means.
  • the apparatus can also have a first transistor means having a first gate, a first drain, and a first source.
  • the first source can be electrically coupled to the first end.
  • the apparatus can also have a second transistor means having a second gate, a second drain, and a second source.
  • the second source can be electrically coupled to the second end.
  • the apparatus can also have a first biasing means electrically coupled to the first drain and the second drain.
  • the apparatus can also have a second biasing means electrically coupled to the first gate and the second gate.
  • FIG. 1 is a circuit diagram of an oscillator circuit.
  • An oscillator circuit (oscillator) 100 is shown.
  • the oscillator 100 may have an inductor Li 102 electrically coupled to a pair of coupling capacitors Ci 104 and C 2 106.
  • the coupling capacitors Ci 104 and C 2 106 electrically "couple" the inductor Li 102 to a varactor circuit, shown as a pair of varactors 112.
  • the varactors 112 may operate as voltage controlled capacitors.
  • the inductor hi 102 may further be electrically coupled to a pair of coarse tuning capacitors: a coarse tuning capacitor C 3 114 and a coarse tuning capacitor C 4 116 (referred to hereinafter as "coarse capacitors").
  • the combination of hi 102, Ci 104, C 2 106, and the varactors 112 may also be referred to herein as a "tank circuit,” “tank” or “LC circuit” 110 (indicated in dashed lines).
  • the tank 110 can act as an electrical resonator, storing energy oscillating at a characteristic resonant frequency of the circuit.
  • V gs gate-to-source voltage
  • the respective transconductance increases.
  • V gs the source-to-drain conductive channel is opened in the MOS devices 202
  • thermal noise may also increase.
  • Increased V gs may result in increased noise. This produces a similar effect as the resistors 122.
  • Increased transconductance can also decrease the impedance of the MOS device 202 from source to drain, further increasing noise.
  • the impedance may increase into the range of mega ohms ( ⁇ ) under such circumstances.
  • the thermal noise added by the MOS devices 202 is also very low.
  • the oscillation frequency may rise as high as a point 310, representing a peak V gs value slightly below V th , in a region labeled "sub V th .”
  • the MOS device 202, 204 may product a small amount of transconductance, and thus a low to moderate amount of thermal noise. However any amount of noise generated may still be minimal and centered at the oscillation peaks.
  • the oscillator 200 is highly sensitive to noise (e.g., phase noise, jitter) as the output voltage (e.g., V tank ) crosses a value of zero at a node.
  • a plot 470 depicts a variation of voltage across the varactors 112, referred to herein as "V tan k," as a function of time (t).
  • the V tan k may be similar to the V tan k 220 (FIG. 2).
  • the plot 470 depicts V tank on the y-axis versus time (t) on the x-axis.
  • a plot 480 depicts the equivalent impedance (Z eq ) of one of the MOS devices used to bias the varactors (e.g., the MOS devices 202, 204) as a function of time (t).
  • the plot 480 shows the impedance (Z eq ) of the MOS devices 202, 204 in ohms ( ⁇ ) on the y-axis versus time on the x-axis.
  • the V b i as 410 may be set such that the V gs of the MOS devices 202 is maintained below the V th -
  • the maximum V gs attained is approximately 0.24V.
  • the V th of the MOS device 202 shown may be 0.25V; therefore the associated source-drain current path is never fully open.
  • the current (I ds ) is the current flowing from the drain to source (e.g., transconductance) of the MOS devices 202 over time, according to the V gs of the MOS device 202 being measured.
  • the band control 510 may be set such that the V gs of the MOS devices 204 is maintained below the V ⁇ .
  • the maximum V gs attained is approximately 0.24V, Or 240 millivolts (mV), as shown.
  • the V th of the MOS device 202 may be 250mV, therefore the source-drain (I ds ) current path is never fully open allowing only a minimum current. This is depicted by the parallel plot 460 of I ds as a function of time.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
PCT/US2015/061877 2015-01-09 2015-11-20 System and method for dynamically biasing oscillators for optimum phase noise Ceased WO2016111761A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201580072692.3A CN107112948A (zh) 2015-01-09 2015-11-20 用于动态地偏置振荡器以获得最优相位噪声的系统和方法
EP15805682.0A EP3243272A1 (en) 2015-01-09 2015-11-20 System and method for dynamically biasing oscillators for optimum phase noise
JP2017536247A JP2018506894A (ja) 2015-01-09 2015-11-20 最適の位相ノイズのために、動的に発振器をバイアスするシステムおよび方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562101795P 2015-01-09 2015-01-09
US62/101,795 2015-01-09
US14/666,084 2015-03-23
US14/666,084 US9444400B2 (en) 2015-01-09 2015-03-23 System and method for dynamically biasing oscillators for optimum phase noise

Publications (1)

Publication Number Publication Date
WO2016111761A1 true WO2016111761A1 (en) 2016-07-14

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PCT/US2015/061877 Ceased WO2016111761A1 (en) 2015-01-09 2015-11-20 System and method for dynamically biasing oscillators for optimum phase noise

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US (1) US9444400B2 (enExample)
EP (1) EP3243272A1 (enExample)
JP (1) JP2018506894A (enExample)
CN (1) CN107112948A (enExample)
WO (1) WO2016111761A1 (enExample)

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US20160190954A1 (en) * 2014-12-31 2016-06-30 Avogy, Inc. Method and system for bridgeless ac-dc converter
US20190109243A1 (en) * 2017-10-06 2019-04-11 Globalfoundries Inc. Back-gate controlled varactor
JP7104407B2 (ja) * 2018-07-25 2022-07-21 ザインエレクトロニクス株式会社 電圧制御発振器、ｐｌｌ回路およびｃｄｒ装置
CN112307698B (zh) * 2019-07-29 2023-10-31 星宸科技股份有限公司 可控制振荡器的自动化设计的方法、电脑程式产品及系统
US12143258B2 (en) * 2021-10-20 2024-11-12 Qualcomm Incorporated Iterative phase-noise cancellation
CN116633271A (zh) * 2023-05-31 2023-08-22 成都电科星拓科技有限公司 解决vco电容开关过压的方法、电路、锁相环及芯片

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Also Published As

Publication number Publication date
EP3243272A1 (en) 2017-11-15
JP2018506894A (ja) 2018-03-08
US9444400B2 (en) 2016-09-13
CN107112948A (zh) 2017-08-29
US20160204738A1 (en) 2016-07-14

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