WO2016106853A1 - 一种发光器件及发光器件封装 - Google Patents

一种发光器件及发光器件封装 Download PDF

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Publication number
WO2016106853A1
WO2016106853A1 PCT/CN2015/070708 CN2015070708W WO2016106853A1 WO 2016106853 A1 WO2016106853 A1 WO 2016106853A1 CN 2015070708 W CN2015070708 W CN 2015070708W WO 2016106853 A1 WO2016106853 A1 WO 2016106853A1
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Prior art keywords
electrode
layer
light emitting
emitting device
semiconductor layer
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Ceased
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PCT/CN2015/070708
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English (en)
French (fr)
Inventor
程艳
周革革
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to KR1020177018445A priority Critical patent/KR101899743B1/ko
Priority to JP2017534665A priority patent/JP6460586B2/ja
Priority to GB1709895.5A priority patent/GB2548515B/en
Priority to US14/436,457 priority patent/US9356199B1/en
Publication of WO2016106853A1 publication Critical patent/WO2016106853A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/726—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • the present invention relates to the field of light emitting devices, and in particular, to a light emitting device and a light emitting device package.
  • a light-emitting device such as an LED light-emitting chip is usually connected from a light-emitting surface to connect positive and negative electrodes.
  • the lead itself absorbs and blocks light emitted from the light-emitting device, affecting the light extraction rate of the light-emitting device.
  • the light-emitting chip connects the electrodes through the wires, affecting the luminous efficiency, and provides a light-emitting device and a light-emitting device package, thereby avoiding absorption and blocking of the light by the lead wires, and improving the light extraction rate of the light-emitting device.
  • an embodiment of the present invention provides a light emitting device, the light emitting device comprising:
  • a light emitting structure comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer which are sequentially stacked, wherein the second conductive type semiconductor layer serves as a light emitting surface of the light emitting structure;
  • the first electrode is disposed on a surface of the first conductive semiconductor layer away from the active layer, and is electrically connected to the first conductive semiconductor layer;
  • the first electrode layer is disposed on a surface of the second conductive semiconductor layer away from the active layer, and is electrically connected to the second conductive semiconductor layer;
  • the second electrode penetrating the light emitting structure and electrically connected to the first electrode layer;
  • An insulating layer disposed between the light emitting structure and the second electrode.
  • the light emitting device further includes a reflective layer disposed on a surface of the first conductive semiconductor layer away from the active layer, An electrode and the second electrode penetrate the reflective layer.
  • the light emitting device further includes a transmissive layer disposed on a surface of the first electrode layer away from the second conductive semiconductor layer, The transmission layer serves to increase the light extraction rate of the light emitting structure.
  • the surface of the transmission layer away from the first electrode layer is concave and convex.
  • the light emitting device further includes a second electrode layer disposed on a surface of the first conductive semiconductor layer away from the insulating layer, The first electrode and the first conductive semiconductor layer are electrically connected by the second electrode layer, the second electrode penetrates the second electrode layer, and the insulating layer is further disposed on the second electrode Between the second electrode layers.
  • the light emitting device further includes a reflective layer, wherein the reflective layer is disposed on the second electrode layer away from the first conductive A surface of the semiconductor layer, the first electrode and the second electrode penetrating the reflective layer.
  • the light emitting structure further includes a first pad and a second pad, wherein the first pad is disposed on the first electrode away from the first conductive semiconductor layer a surface for electrically connecting to the first electrode; the second pad is disposed on a surface of the second electrode away from the first electrode layer for electrically connecting with the second electrode.
  • the light emitting device further includes a second electrode layer disposed on the first conductive semiconductor layer away from a surface of the insulating layer, the first electrode and the first conductive semiconductor are electrically connected by the second electrode layer, the second pad penetrates the second electrode layer, and the insulating layer is further disposed on Between the second electrode and the second electrode layer, and between the second pad and the second electrode layer.
  • the light emitting device further includes a reflective layer, wherein the reflective layer is disposed on the second electrode layer away from the first conductive The surface of the semiconductor layer, the first electrode or the first pad penetrates the reflective layer, and the second electrode or the second pad penetrates the reflective layer.
  • an embodiment of the present invention provides a light emitting device package, including a light emitting device, where the light emitting device specifically includes:
  • a light emitting structure comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer which are sequentially stacked, wherein the second conductive type semiconductor layer serves as a light emitting surface of the light emitting structure;
  • the first electrode is disposed on a surface of the first conductive semiconductor layer away from the active layer, and is electrically connected to the first conductive semiconductor layer;
  • the first electrode layer is disposed on a surface of the second conductive semiconductor layer away from the active layer, and is electrically connected to the second conductive semiconductor layer;
  • the second electrode penetrating the light emitting structure and electrically connected to the first electrode layer;
  • An insulating layer disposed between the light emitting structure and the second electrode.
  • the light emitting device further includes a reflective layer disposed on a surface of the first conductive semiconductor layer away from the active layer, An electrode and the second electrode penetrate the reflective layer.
  • the light emitting device further includes a transmissive layer disposed on a surface of the first electrode layer away from the second conductive semiconductor layer, The transmission layer serves to increase the light extraction rate of the light emitting structure.
  • the surface of the transmission layer away from the first electrode layer is concave and convex.
  • the light emitting device further includes a second electrode layer disposed on a surface of the first conductive semiconductor layer away from the insulating layer, The first electrode and the first conductive semiconductor layer are electrically connected by the second electrode layer, the second electrode penetrates the second electrode layer, and the insulating layer is further disposed on the second electrode Between the second electrode layers.
  • the light emitting device further includes a reflective layer, wherein the reflective layer is disposed on the second electrode layer away from the first conductive A surface of the semiconductor layer, the first electrode and the second electrode penetrating the reflective layer.
  • the light emitting structure further includes a first pad and a second pad, wherein the first pad is disposed on the first electrode away from the first conductive semiconductor layer a surface for electrically connecting to the first electrode; the second pad is disposed on a surface of the second electrode away from the first electrode layer for electrically connecting with the second electrode.
  • the light emitting device further includes a second electrode layer disposed on the first conductive semiconductor layer away from a surface of the insulating layer, the first electrode and the first conductive semiconductor are electrically connected by the second electrode layer, the second pad penetrates the second electrode layer, and the insulating layer is further disposed on Between the second electrode and the second electrode layer, and between the second pad and the second electrode layer.
  • the light emitting device further includes a reflective layer, wherein the reflective layer is disposed on the second electrode layer away from the first conductive The surface of the semiconductor layer, the first electrode or the first pad penetrates the reflective layer, and the second electrode or the second pad penetrates the reflective layer.
  • the two electrodes of the first electrode and the second electrode are protruded from the back surface of the light-emitting surface of the light-emitting device, and the lead wire of the light-emitting device does not need to be leaded, thereby avoiding the first
  • the lead connected to the electrode and the second electrode absorbs and blocks light, thereby improving the light extraction rate.
  • the light-emitting device of the present invention is provided with a transmissive layer on the first electrode layer, through which the emitted light can be made more uniform, and the upper surface of the transmissive layer can be set to be uneven, and the surface area of the transmissive layer can be increased.
  • the reflective layer is disposed on the surface of the second electrode layer away from the first conductive semiconductor layer, and the light emitted from the first conductive semiconductor layer is reflected to the light emitting surface of the light emitting structure, thereby improving the light output of the light emitting device. rate.
  • FIG. 1 is a schematic perspective view of a light emitting device according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural view of the AA' cross section of FIG. 1 according to an embodiment of the present invention.
  • FIG. 3 is a schematic perspective structural view of another light emitting device according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural view of the AA' cross section of FIG. 3 according to an embodiment of the present invention.
  • FIG. 5 is a schematic perspective structural view of another light emitting device according to an embodiment of the present invention.
  • Figure 6 is a schematic view showing the structure of the A-A' cross section of Figure 5 according to an embodiment of the present invention.
  • 7 to 17 are process flow diagrams of a light emitting device according to an embodiment of the present invention.
  • FIG. 18 is a schematic structural diagram of a package of a light emitting device according to an embodiment of the present invention.
  • FIG. 1 is a perspective view of a three-dimensional structure of a light emitting device according to an embodiment of the present invention.
  • 2 is a schematic structural view of a cross section taken along line A-A' of FIG. 1 according to an embodiment of the present invention.
  • the light emitting device 10 includes a light emitting structure 13, a first electrode 16, a first electrode layer 12, a second electrode 18, and an insulating layer 17.
  • the light emitting structure 13 is for emitting light after being energized, and the light emitting structure 13 includes a first conductive type semiconductor layer 133, an active layer 132, and a second conductive type semiconductor layer 131 which are sequentially stacked.
  • the first electrode 16 is disposed on a surface of the first conductive semiconductor layer 133 away from the active layer 132 and electrically connected to the first conductive semiconductor layer 133 to transfer current to the light emitting structure 13 .
  • the first electrode layer 12 is disposed on a surface of the second conductive semiconductor layer 131 away from the active layer 132, and is electrically connected to the second conductive semiconductor layer 131 to be transmitted to the light emitting structure 13 Current.
  • the second electrode 18 penetrates the light emitting structure 13 and is electrically connected to the first electrode layer 12 to transfer current to the light emitting structure 13 through the first electrode layer 12.
  • the insulating layer 17 is disposed between the light emitting structure 13 and the second electrode 18 to prevent the second electrode 18 from being electrically connected to the light emitting structure 13 directly.
  • the light emitting device 10 further includes a transmissive layer 11 disposed on a surface of the first electrode layer 12 away from the second conductive semiconductor layer 131, the transmissive layer 11 It is used to increase the light extraction rate of the light emitting structure 13.
  • the transmission layer 11 is made of a transparent material, and may be sapphire, resin, or the like.
  • the transmission layer 11 is used for light transmission, and the upper surface of the transmission layer 11 may be arranged in a graphic shape, such as a concave-convex structure. The surface area of the large transmission layer increases its light extraction rate.
  • the light emitting device 10 further includes a first pad 19 and a second pad 20.
  • the first pad 19 is disposed at a middle portion of the surface of the first electrode 16 away from the first conductive type semiconductor layer 133, and is electrically connected to the first electrode 16 for transmitting current to the first electrode 16 .
  • the second pad 20 is disposed at a middle portion of the second electrode 18 away from the surface of the first electrode layer 12, and is electrically connected to the second electrode 18 for transmitting current to the second electrode 20.
  • the components included in the structure of the light emitting device 10 are described in detail below.
  • the light direction is temporarily specified as an upward direction.
  • the present embodiment is The position word should correspond to the change.
  • the first electrode layer 12 is disposed on the lower surface of the transmissive layer 11, and the first electrode layer 12 is a conductive material having light transmissive properties such as Au, Al, Pd, Rh, etc., and the film formed by the conductive layer is not only electrically conductive but also Light transmission, the invention does not limit the material.
  • the light emitting structure 13 is disposed on a surface of the first electrode layer 12 away from the transmissive layer 11, that is, a lower surface of the first electrode layer 12.
  • the light emitting structure 13 includes a first conductive type semiconductor layer 133, an active layer 132, and a second conductive type semiconductor layer. 131.
  • the active layer 132 is disposed on the first conductive semiconductor layer 133
  • the second conductive semiconductor layer 131 is disposed on the active layer 132.
  • the first conductive semiconductor layer 133 and the active layer 132 are disposed.
  • the second conductive type semiconductor layer 131 is electrically connected to form an element capable of emitting light, and the element is connected to the opposite electrode on the upper and lower surfaces, and then the light is emitted.
  • the first conductive semiconductor layer 133 includes at least one semiconductor layer doped with ions of a first type.
  • the first conductive semiconductor layer 133 may include GaN, InN.
  • At least one of AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP or AlGaInP when the first type of ions are N-type ions, the first conductive semiconductor layer 133 may include Si, Ge, Sn, Se or Te.
  • the active layer 132 may include a III-V compound semiconductor.
  • the active layer 132 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum wire structure, or a quantum dot structure.
  • the well layer/barrier layer of the active layer 132 may include a paired structure in InGaN/GaN, GaN/AlGaN, or InGaN/InGaN, but the embodiment is not limited thereto.
  • the active layer 132 is made of a material having a band gap depending on the wavelength of the emitted light.
  • the active layer 132 has a single quantum well structure or a multiple quantum well structure including an InGaN well layer/GaN barrier layer.
  • the active layer 132 can optionally include materials capable of providing light of the visible ray band, such as blue light, red light, and green light, which materials can be varied within the skill of the art.
  • the second conductive type semiconductor layer 131 includes at least one semiconductor layer doped with a second type of ions, and when the second conductive type semiconductor layer 131 is a P type semiconductor layer, the second conductive type semiconductor layer 131 may include GaN, InN At least one of AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP or AlGaInP, when the second type of ions are P-type ions, the second conductive semiconductor layer 131 may include Mg, Zn, At least one of Ca, Sr or Ba.
  • the upper surface of the second conductive type semiconductor layer 131 in the light emitting structure 13 is in contact with the lower surface of the first electrode layer 12, and therefore, the second conductive type semiconductor layer 131 and the first electrode layer 12 can be uniformly and stably Diffusion current.
  • the first electrode 16 is electrically connected to the light emitting structure 13 , specifically, the first electrode 16 and the light emitting
  • the first conductive type semiconductor layer 133 in the structure 13 is in contact with the surface of the active layer 132 to cause current to be more uniformly transferred between it and the first conductive type semiconductor layer 133, the first electrode 16 and the first conductive type semiconductor
  • the specific portion where the lower surface of the layer 133 is in contact is not limited.
  • the second electrode 18 is in contact with the first electrode layer 12 . Specifically, the second electrode 18 penetrates the light emitting structure 13 and is in contact with the surface of the first electrode layer 12 away from the transmissive layer 11 to form an electrical connection to pass through the first electrode layer 12 . The current is dispersed to the second conductive type semiconductor layer 131. It should be noted that although the second electrode 18 penetrates the light emitting structure 13 , there is no electrical contact with the light emitting structure 13 .
  • an insulating layer 17 is disposed between the second electrode 18 and the light emitting structure 13 so that the second electrode 18
  • the electrode 18 is not directly connected to the light emitting structure 13, but is indirectly connected to the second conductive type semiconductor layer 131 of the light emitting structure 13 through the second electrode layer 12, thereby realizing the transfer of current.
  • the materials used for the insulating layer 17 include, but are not limited to, organic solid insulating materials: insulating varnish, insulating rubber, insulating paper, insulating fiber products, plastics, rubber, lacquered paint tubes and insulating impregnated fiber products, electrical films, composite products and adhesives. Laminates for electrical and electronic applications; inorganic solid insulating materials mainly include mica, glass, ceramics and their products.
  • the material of the first electrode 16 and the second electrode 18 may be at least one of Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Rh, Au, Ir, Pt, W or Au.
  • One or more mixture materials but the embodiment is not limited to the materials.
  • each of the first electrode 16 and the second electrode 18 includes, but is not limited to, a straight line pattern, a curved pattern, a mixed pattern of a straight line pattern and a curved pattern, a plurality of patterns branched by one pattern, a polygonal pattern, a grid pattern , a dot pattern, a diamond pattern, a parallelogram pattern, a grid pattern, a strip pattern, a cross pattern, a star pattern, a circular pattern, or a mixed pattern thereof, but the embodiment is not limited thereto.
  • the patterned first electrode 16 can uniformly supply the first conductive type semiconductor layer 133, thereby preventing current from being concentrated at one position, and the patterned second electrode 18 can uniformly supply the first electrode layer 12, thereby preventing current Focus on one location.
  • the lower portion of the first electrode 16 may form a first pad 19 to smoothly transmit power
  • the lower portion of the second electrode 18 may be connected to the second pad 20 to smoothly transmit power
  • the first pad 19 and the second pad 20 may be Ti-containing.
  • a material of Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Rh, Au, Ir, Pt, W or Au is produced, and the present embodiment does not limit the material.
  • the first pad 19 can be connected to the power source positive electrode to obtain the first pad 19 from
  • the current of the power source is transmitted to the first electrode 16 connected thereto, and the first electrode 16 diffuses the current to the first conductive type semiconductor layer 133 in the light emitting structure 13 connected thereto, and further, the first structure of the light emitting structure 13
  • the two-conductivity-type semiconductor layer 131 smoothly transmits current to the first electrode layer 12 connected thereto, and then the current is transmitted from the first electrode layer 12 to the second electrode 18, further to the second pad 20, and the second pad 20 The current is transmitted back to the negative electrode of the power source.
  • first conductive type semiconductor layer 133 of the light-emitting structure 13 has a current flowing therein
  • second conductive type semiconductor layer 131 has a current flowing out, thereby emitting light.
  • first electrode 16 and the second electrode 18 is connected to the positive electrode and which is connected to the negative electrode needs to be determined according to the structure of the light emitting structure 13 .
  • the electrodes of the first electrode 16 and the second electrode 18 are not limited herein.
  • the two electrodes of the first electrode 16 and the second electrode 18 are protruded from the back surface of the light-emitting surface of the light-emitting device 10 by using the light-emitting device 10 shown in FIGS. 1 to 2, and no need to emit light again.
  • the light-emitting surface lead of the device 10 avoids absorption and occlusion of light by the leads connected to the first electrode 16 and the second electrode 18, and improves the light extraction rate.
  • the light-emitting device 10 of the present invention is provided with a transmission layer 11 on the first electrode layer 12, through which the emitted light can be made more uniform, and the upper surface of the transmission layer 11 can be set to be uneven. The surface area of the large transmission layer 11 is increased to increase the light extraction rate.
  • FIG. 3 is a schematic perspective view of another embodiment of the present invention.
  • FIG. 4 is a schematic structural view of the AA' cross-section of FIG. 3 according to an embodiment of the present invention.
  • the light emitting device 10 includes the light emitting structure 13, the first electrode 16, the first electrode layer 12, the second electrode 18, the insulating layer 17, the transmissive layer 11, and the first pad 19 included in the light emitting structure 10 shown in FIG.
  • the second electrode layer 14 is disposed on the surface of the first conductive semiconductor layer 133 away from the insulating layer, and the first electrode 16 is connected to the first electrode layer 14 through the first electrode layer 14.
  • the conductive semiconductor layer 133 is configured to uniformly transfer current to the first conductive type semiconductor layer 133, thereby preventing current from being concentrated in one transfer, wherein the second electrode layer 14 covers the entire lower surface of the first conductive type semiconductor layer 133 . Further, the second electrode layer 14 is provided with a notch, and the second pad 20 electrically connected to the second electrode 16 protrudes from the notch to connect the external leads, and further, the second electrode layer 14 and the second pad 20 The insulating layer 17 is disposed to prevent the second electrode layer 14 from being electrically connected to the second pad 20 to cause the entire light emitting device 10 to be short-circuited. It should be noted that materials used for the second electrode layer 14 include, but are not limited to, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf.
  • the first electrode 16 and the second electrode are used.
  • the two electrodes of the electrode 18 protrude from the back surface of the light-emitting surface of the light-emitting device 10, and do not need to be leaded from the light-emitting surface of the light-emitting device 10, thereby avoiding absorption of light by the leads connected to the first electrode 16 and the second electrode 18 and Occlusion increases the light output rate.
  • the light-emitting device 10 of the present invention is provided with a transmission layer 11 on the first electrode layer 12, through which the emitted light can be made more uniform, and the upper surface of the transmission layer 11 can be set to be uneven.
  • the surface area of the large transmission layer 11 is increased to increase the light extraction rate; the first electrode layer is disposed between the transmission layer 11 and the second conductive type semiconductor layer 131, so that the current transmitted from the second electrode 18 can be uniformed through the first electrode layer 12. Dispersing onto the second conductive type semiconductor layer 131, the second electrode layer 14 is disposed between the first electrode 16 and the first conductive type semiconductor layer 133, so that the current transmitted from the first electrode 16 can pass through the second electrode layer The uniform dispersion of 14 onto the first conductive type semiconductor layer 133 improves the light-emitting property of the light-emitting structure 13.
  • FIG. 5 is a schematic perspective view of another embodiment of the present invention.
  • FIG. 6 is a schematic structural view of the AA' cross section of FIG. 5 according to an embodiment of the present invention.
  • the light emitting device 10 includes, in addition to the light emitting structure 13 included in the light emitting structure 10 shown in FIG. 4, the first electrode 16, the first electrode layer 12, the second electrode 18, the insulating layer 17, the transmissive layer 11, and the first pad 19.
  • a reflective layer 15 is further disposed; the reflective layer 15 is disposed on the entire surface of the second electrode layer 14 away from the first conductive type semiconductor layer 133 for reflecting the light emitting structure The light diverged from the first conductive type semiconductor layer 133 increases the light extraction rate of the light emitting device 10.
  • the reflective layer 15 is provided with two notches, and the first electrode 16 or the first pad 19 protrudes from one of the notches to connect the external leads, and the second pad 20 protrudes from the other notch to connect the external leads.
  • the reflective layer 15 may be a metal material such as Al or Ag. When it is a metal material, an insulating layer 17 is also disposed between the reflective layer 15 and the second pad 20.
  • the reflective layer 15 may also be a PVC, a PU, or the like.
  • the material constituting the reflective layer 15 is not limited. However, in this embodiment, the insulating polymer is preferably used as the material source of the reflective layer 15, so that it can continuously reflect light and can be insulated from the outside. To improve safety.
  • the two electrodes of the first electrode 16 and the second electrode 18 are protruded from the back surface of the light-emitting surface of the light-emitting device 10 by using the light-emitting device 10 shown in FIGS. 5 to 6, and it is not necessary to emit light.
  • the light-emitting surface lead of the device 10 avoids absorption and occlusion of light by the leads connected to the first electrode 16 and the second electrode 18, and improves the light extraction rate.
  • the light emitting device 10 of the present invention is on the first electrode layer 12
  • the transmissive layer 11 is disposed above, and the emitted light can be made more uniform by the transmissive layer 11.
  • the upper surface of the transmissive layer 11 can be set to be uneven, and the surface area of the transmissive layer 11 can be increased to increase the light extraction rate;
  • the first electrode layer is disposed between the first conductive layer 131 and the second conductive semiconductor layer 131 so that the current transmitted from the second electrode 18 can be uniformly dispersed to the second conductive semiconductor layer 131 through the first electrode layer 12, at the first
  • the second electrode layer 14 is disposed between the electrode 16 and the first conductive type semiconductor layer 133, so that the current transmitted from the first electrode 16 can be uniformly dispersed to the first conductive type semiconductor layer 133 through the second electrode layer 14, thereby improving
  • the light-emitting property of the light-emitting structure 13 is provided;
  • the reflective layer 15 is disposed on the surface of the second electrode layer 14 away from the first conductive-type semiconductor layer 133, and the light emitted from the first conductive-type semiconductor layer 133 is reflected to the light-emitting structure 13
  • the light exiting surface enhances the light extraction rate
  • FIGS. 5-6 are process flow diagrams of a light emitting device according to an embodiment of the present invention, which is used to fabricate the light emitting device 10 shown in FIGS. 5-6.
  • a first electrode layer 12 is formed on the transmission layer 11, and the first electrode layer 12 may be formed of a film formed of Au, Al, or the like so as to be transparent and have electrical conductivity.
  • the light emitting structure 13 is formed on the first electrode layer 12, wherein the light emitting structure 13 sequentially includes the stacked first conductive type semiconductor layer 133, the active layer 132, and the second conductive type semiconductor layer 131.
  • the active layer 132 is formed on the first conductive type semiconductor layer 133.
  • the active layer 132 may include a III-V compound semiconductor.
  • the active layer 132 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure.
  • the well layer/barrier layer of the active layer 132 may include a paired structure in InGaN/GaN, GaN/AlGaN, or InGaN/InGaN, but the embodiment is not limited thereto.
  • a first conductive coating can be provided under the active layer 132.
  • a second conductive coating can be provided under the active layer 132.
  • the first and second conductive coatings may include a GaN-based semiconductor and have a band gap higher than a band gap of the active layer 132.
  • the active layer 132 may include a material that emits colored light such as blue light, red light, or green light, which may be changed within the technical scope of the embodiment.
  • a second conductive type semiconductor layer 131 is formed on the active layer 132, and the second conductive type semiconductor layer 131 includes at least one semiconductor layer doped with a second type of ions and includes a second electrode contact layer.
  • the second conductive type semiconductor layer 131 is a P type semiconductor layer
  • the second conductive type semiconductor layer 131 may include at least at least GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, or AlGaInP One.
  • the second type of ion is a P-type ion
  • the bulk layer 131 may include at least one of Mg, Zn, Ca, Sr, and Ba.
  • a first recess 134 is formed in the light-emitting structure 13 by an etching process, the first recess 134 is a through cavity of the light-emitting structure 13 to expose the first electrode layer 12 connected to the light-emitting structure 13;
  • the first recess 134 is configured to dispose the second electrode 18 such that the second electrode 18 is electrically connected to the first electrode layer 12 , wherein the first gap 135 is generated between the light emitting structure 13 and the second electrode 18 . ;
  • the insulating layer 17 is filled in the first gap 135 to fix the second electrode 18 in the light emitting structure 13 to be electrically insulated from the first electrode layer 12, and insulated from the light emitting structure 13;
  • 17 materials used include, but are not limited to, organic solid insulation materials: insulating varnish, insulating rubber, insulating paper, insulating fiber products, plastics, rubber, lacquered paint tubes and insulating impregnated fiber products, electrical films, composite products and adhesive tapes. Laminates and the like for electricians; inorganic solid insulating materials mainly include mica, glass, ceramics, and the like thereof, and the present embodiment does not limit the materials used for the insulating layer 17.
  • the second electrode layer 14 is ferbed on the light emitting structure 13 and the insulating layer 17.
  • the materials used for the second electrode layer 14 include, but are not limited to, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg. , Zn, Pt, Au, Hf.
  • a second recess 141 is formed on the second electrode layer 14 by an etching process, and the second recess 141 penetrates the second electrode layer 14 and the insulating layer 17 in contact with the second electrode layer 14, thereby exposing the second Electrode 18;
  • a second pad 20 is disposed in the second recess 141.
  • One end of the second pad 20 is electrically connected to the exposed second electrode 18, and the other end of the second pad 20 protrudes from the surface of the second electrode layer 14.
  • a second gap 142 is formed between the second pad 20 and the first electrode layer 14;
  • the insulating layer 17 is ferried between the second pad 20 and the second electrode layer 14 in the second gap 142 to prevent the second pad 20 from contacting the second electrode layer 14 to short the entire light emitting device 10.
  • the first electrode 16 is ferbed on the first electrode layer 14 using an electroplating process
  • the reflective layer 15 is formed in a portion where the upper surface of the first electrode layer 14 is not in contact with other structures, and the thickness of the reflective layer 15 is not limited.
  • connection between the layers may be set to be concave and convex.
  • the thickness of each layer is not limited herein, and the thickness can be set according to actual needs; in addition, the above process flow is only an optional embodiment, and obviously, the light-emitting device 10 based on the present invention has other The process can achieve this effect, and will not be exemplified here.
  • FIG. 18 is a side cross-sectional view of a light emitting device package 50 according to an embodiment of the present invention. The following is specifically described in connection with the structure of the light emitting device.
  • a light emitting device package 50 includes a main body 51, first and second lead electrodes 52 and 53 disposed on the main body 51, and are disposed in the main body 51 and electrically connected to the first and second lead electrodes 52 and 53.
  • the light emitting device 10 in the embodiment corresponding to FIGS. 1 to 6, and the molding member 54 surrounding the light emitting device 10.
  • the body 51 may include silicon, a synthetic resin, or the like such as PPA or a metal material.
  • An inclined surface may be formed around the light emitting device 10.
  • the body 51 can have a cavity structure that is open at the top.
  • a light emitting device 10 can be provided in the cavity.
  • the first and second lead electrodes 52 and 53 are insulated from each other and supply power to the light emitting device 10.
  • the first and second lead electrodes 52 and 53 can discharge heat from the light emitting device 10 to the outside.
  • the light emitting device 10 can be mounted on the main body 51 or mounted on the first lead electrode 52 and the second lead electrode 53.
  • the light emitting device 10 can be supported on the leads (52 and 53) through the first pad and the second pad, which reduces the contact area between the light emitting device 10 and the main body 51, and is advantageous for dissipating heat rays.
  • the molding element 54 can protect the light emitting device 10 by surrounding the light emitting device 10.
  • the molding element 54 includes a phosphor to change the wavelength of light emitted from the light emitting device 10.
  • a lens can be formed on the molding element 54.
  • the light emitting device 10 of any of the above embodiments is packaged on a semiconductor substrate including an resin or silicon, an insulating substrate, or a ceramic substrate such that the semiconductor light emitting device 10 functions as a light source for indicating a device, a lighting device, a display, and the like.
  • a semiconductor substrate including an resin or silicon, an insulating substrate, or a ceramic substrate such that the semiconductor light emitting device 10 functions as a light source for indicating a device, a lighting device, a display, and the like.
  • a semiconductor substrate including an resin or silicon, an insulating substrate, or a ceramic substrate such that the semiconductor light emitting device 10 functions as a light source for indicating a device, a lighting device, a display, and the like.
  • the two electrodes of the first electrode 16 and the second electrode 18 are protruded from the back surface of the light-emitting surface of the light-emitting device 10, and it is not necessary to further lead from the light-emitting surface of the light-emitting device 10.
  • the absorption and occlusion of light by the leads connected to the first electrode 16 and the second electrode 18 are avoided, and the light extraction rate is improved.
  • the light-emitting device 10 of the present invention is provided with a transmission layer 11 on the first electrode layer 12, through which the emitted light can be made more uniform, and the upper surface of the transmission layer 11 can be set to be uneven.
  • a first electrode layer is disposed between the second conductive type semiconductor layer 131 such that a current transmitted from the second electrode 18 can be uniformly dispersed through the first electrode layer 12 onto the second conductive type semiconductor layer 131 at the first electrode
  • the second electrode layer 14 is disposed between the first conductive type semiconductor layer 133 and the first conductive type semiconductor layer 133, so that the current transmitted from the first electrode 16 can be uniformly dispersed to the first conductive type semiconductor layer 133 through the second electrode layer 14, which is improved.
  • the light-emitting property of the light-emitting structure 13; the reflective layer 15 is disposed on the surface of the second electrode layer 14 away from the first conductive-type semiconductor layer 133, and the light emitted from the first conductive-type semiconductor layer 133 is reflected by the light-emitting structure 13 to the light-emitting structure 13 In the face, the light extraction rate of the light emitting device 10 is improved.

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Abstract

提供一种发光器件及发光器件封装，该发光器件（10）包括：发光结构（13），发光结构（13）包括依次层叠设置的第一导电型半导体层（133）、有源层（132）和第二导电型半导体层（131），其中，第二导电型半导体层（131）作为发光结构（13）的出光面；第一电极（16）设置于第一导电型半导体层（133）远离有源层（132）的表面，且与第一导电型半导体层（133）电连接；第一电极层（12）设置于第二导电型半导体层（131）远离有源层（132）的表面，且与第二导电型半导体层（131）电连接；第二电极（18）贯穿发光结构（13），并与第一电极层（12）电连接；绝缘层（17）设置于发光结构（13）与第二电极（18）之间。采用本发明，从发光器件底部引出电极，避免了引线对光线的遮挡和吸收，提高了出光率。

Description

一种发光器件及发光器件封装
本发明要求2014年12月30日递交的发明名称为“一种发光器件及发光器件封装”的申请号201410848993.8的在先申请优先权，上述在先申请的内容以引入的方式并入本文本中。
技术领域
本发明涉及发光器件领域，尤其涉及一种发光器件以及发光器件封装。
背景技术
能源的可持续利用一直是社会关注的重点，科学家们正在研制各种低能耗、高性能的发光灯管以缓解当前面临的能源压力，其中，发光二极管(Light-Emitting Diode，简称LED)在高效节能方面效果凸出，正在不断地向生活中各个领域普及。
现有技术中，发光器件比如LED发光芯片通常从发光面引线，以连接正负电极，然而，引线本身会对发光器件发出的光线产生吸收和遮挡，影响发光器件的光取出率。
发明内容
本发明实施例所要解决的技术问题在于发光芯片通过引线连接电极，影响发光效率，提供一种发光器件及发光器件封装，避免了引线对光的吸收和遮挡，提高了发光器件的光取出率。
第一方面，本发明实施例提供一种发光器件，该发光器件包括：
发光结构，所述发光结构包括依次层叠设置的第一导电型半导体层、有源层和第二导电型半导体层，其中，所述第二导电型半导体层作为所述发光结构的出光面；
第一电极，所述第一电极设置于所述第一导电型半导体层远离所述有源层的表面，且与所述第一导电型半导体层电连接；
第一电极层，所述第一电极层设置于所述第二导电型半导体层远离所述有源层的表面，且与所述第二导电型半导体层电连接；
第二电极，所述第二电极贯穿所述发光结构，并与所述第一电极层电连接；
绝缘层，所述绝缘层设置于所述发光结构与所述第二电极之间。
结合第一方面，在第一种可能的实现方式中，所述发光器件还包括反射层，所述反射层设置于所述第一导电型半导体层远离所述有源层的表面，所述第一电极和所述第二电极贯穿所述反射层。
结合第一方面，在第二种可能的实现方式中，所述发光器件还包括透射层，所述透射层设置于所述第一电极层远离所述第二导电型半导体层的表面，所述透射层用于提高所述发光结构的光取出率。
结合第一方面的第二种可能的实现方式，在第三种可能的实现方式中，所述透射层远离所述第一电极层的表面为凹凸状。
结合第一方面，在第四种可能的实现方式中，所述发光器件还包括第二电极层，所述第二电极层设置于所述第一导电型半导体层远离所述绝缘层的表面，所述第一电极与所述第一导电型半导体层通过所述第二电极层电连接，所述第二电极贯穿所述第二电极层，所述绝缘层还设置于所述第二电极与所述第二电极层之间。
结合第一方面的第四种可能的实现方式，在第五种可能的实现方式中，所述发光器件还包括反射层，所述反射层设置于所述第二电极层远离所述第一导电型半导体层的表面，所述第一电极和所述第二电极贯穿所述反射层。
结合第一方面，在第六种可能的实现方式中，所述发光结构还包括第一垫和第二垫，所述第一垫设置于所述第一电极远离所述第一导电型半导体层的表面，用于和所述第一电极电连接；所述第二垫设置于所述第二电极远离所述第一电极层的表面，用于和所述第二电极电连接。
结合第一方面的第六种可能的实现方式，在第七可能的实现方式中，所述发光器件还包括第二电极层，所述第二电极层设置于所述第一导电型半导体层远离所述绝缘层的表面，所述第一电极与所述第一导电型半导体通过所述第二电极层电连接，所述第二垫贯穿所述第二电极层，所述绝缘层还设置于所述第二电极与所述第二电极层之间，以及所述第二垫与所述第二电极层之间。
结合第一方面的第七种可能的实现方式，在第八种可能的实现方式中，所述发光器件还包括反射层，所述反射层设置于所述第二电极层远离所述第一导电型半导体层的表面，所述第一电极或所述第一垫贯穿所述反射层，并且所述第二电极或所述第二垫贯穿所述反射层。
第二方面，本发明实施例提供一种发光器件封装，包括发光器件，所述发光器件具体包括：
发光结构，所述发光结构包括依次层叠设置的第一导电型半导体层、有源层和第二导电型半导体层，其中所述第二导电型半导体层作为所述发光结构的出光面；
第一电极，所述第一电极设置于所述第一导电型半导体层远离所述有源层的表面，且与所述第一导电型半导体层电连接；
第一电极层，所述第一电极层设置于所述第二导电型半导体层远离所述有源层的表面，且与所述第二导电型半导体层电连接；
第二电极，所述第二电极贯穿所述发光结构，并与所述第一电极层电连接；
绝缘层，所述绝缘层设置于所述发光结构于所述第二电极之间。
结合第二方面，在第一种可能的实现方式中，所述发光器件还包括反射层，所述反射层设置于所述第一导电型半导体层远离所述有源层的表面，所述第一电极和所述第二电极贯穿所述反射层。
结合第二方面，在第二种可能的实现方式中，所述发光器件还包括透射层，所述透射层设置于所述第一电极层远离所述第二导电型半导体层的表面，所述透射层用于提高所述发光结构的光取出率。
结合第二方面的第二种可能的实现方式，在第三种可能的实现方式中，所述透射层远离所述第一电极层的表面为凹凸状。
结合第二方面，在第四种可能的实现方式中，所述发光器件还包括第二电极层，所述第二电极层设置于所述第一导电型半导体层远离所述绝缘层的表面，所述第一电极与所述第一导电型半导体层通过所述第二电极层电连接，所述第二电极贯穿所述第二电极层，所述绝缘层还设置于所述第二电极与所述第二电极层之间。
结合第二方面的第四种可能的实现方式，在第五种可能的实现方式中，所述发光器件还包括反射层，所述反射层设置于所述第二电极层远离所述第一导电型半导体层的表面，所述第一电极和所述第二电极贯穿所述反射层。
结合第二方面，在第六种可能的实现方式中，所述发光结构还包括第一垫和第二垫，所述第一垫设置于所述第一电极远离所述第一导电型半导体层的表面，用于和所述第一电极电连接；所述第二垫设置于所述第二电极远离所述第一电极层的表面，用于和所述第二电极电连接。
结合第二方面的第六种可能的实现方式，在第七可能的实现方式中，所述发光器件还包括第二电极层，所述第二电极层设置于所述第一导电型半导体层远离所述绝缘层的表面，所述第一电极与所述第一导电型半导体通过所述第二电极层电连接，所述第二垫贯穿所述第二电极层，所述绝缘层还设置于所述第二电极与所述第二电极层之间，以及所述第二垫与所述第二电极层之间。
结合第二方面的第七种可能的实现方式，在第八种可能的实现方式中，所述发光器件还包括反射层，所述反射层设置于所述第二电极层远离所述第一导电型半导体层的表面，所述第一电极或所述第一垫贯穿所述反射层，并且所述第二电极或所述第二垫贯穿所述反射层。
通过实施本发明实施例提供的发光器件，将第一电极和第二电极这两个电极从发光器件的出光面的背面凸出，不需要再从发光器件的发光面引线，避免了与第一电极和第二电极相连的引线对光的吸收和遮挡，提高了出光率。进一步地，本发明的发光器件在第一电极层上面设置透射层，通过该透射层可使发出的光更加均匀，另外，可将透射层上表面可设置为凹凸状，增大透射层的表面积以提高光取出率；在透射层与第二导电型半导体层之间设置第一电极层，使得由第二电极传出的电流能够通过第一电极层均匀地分散到第二导电型半导体层上，在第一电极与第一导电型半导体层之间设置第二电极层，使得由第一电极传出的电流能够通过第二电极层均匀地分散到第一导电型半导体层上，提高了发光结构的发光性能；在第二电极层远离第一导电型半导体层的表面设置反射层，将发光结构从第一导电型半导体层发散的光反射到发光结构的出光面，提高了发光器件的出光率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例提供的一种发光器件的立体结构示意图。
图2是本发明实施例提供的图1的A-A’截面的结构示意图。
图3是本发明实施例提供的另一种发光器件的立体结构示意图。
图4是本发明实施例提供的图3的A-A’截面的结构示意图。
图5是本发明实施例提供的另一种发光器件的立体结构示意图。
图6是本发明实施例提供的图5的A-A’截面的结构示意图。
图7～17是本发明实施例提供的一种发光器件的工艺流程图。
图18是本发明实施例提供的一种发光器件的封装的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
需要说明的是，在本发明实施例中使用的术语是仅仅出于描述特定实施例的目的，而非旨在限制本发明。在本发明实施例和所附权利要求书中所使用的单数形式的“一种”、“所述”和“该”也旨在包括多数形式，除非上下文清楚地表示其他含义。还应当理解，本文中使用的术语“和/或”是指并包含一个或多个相关联的列出项目的任何或所有可能组合，另外，本实施例中的描述涉及到的“上部”、“下部”、“上面”、“下面”、“上表面”和“下表面”等方向性的描述都是以发光器件的出光方向作为参照，对一个特定的部件来说，朝向出光方向的部分可以称之为“上部”、“上面”、“上表面”等，背向出光方向的部分可以称之为“下部”、“下面”、“下表面”等。
请参照图1和图2，图1是本发明实施例提供的一种发光器件的立体结构 示意图；图2是本发明实施例提供的图1的A-A’截面的结构示意图。所述发光器件10包括发光结构13、第一电极16、第一电极层12，第二电极18及绝缘层17。所述发光结构13用于通电后发出光，所述发光结构13包括依次层叠设置的第一导电型半导体层133、有源层132以及第二导电型半导体层131。所述第一电极16设置于所述第一导电型半导体层133远离所述有源层132的表面，且与所述第一导电型半导体层133电连接，以向所述发光结构13传递电流。所述第一电极层12设置于所述第二导电型半导体层131远离所述有源层132的表面，且与所述第二导电型半导体层131电连接，以向所述发光结构13传递电流。所述第二电极18贯穿所述发光结构13，并与所述第一电极层12电连接，以通过所述第一电极层12向所述发光结构13传递电流。所述绝缘层17设置于所述发光结构13与所述第二电极18之间，以避免所述第二电极18直接与所述发光结构13电连接。
为了使本实施例更加完善，所述发光器件10还包括透射层11所述透射层11设置于所述第一电极层12远离所述第二导电型半导体层131的表面，所述透射层11用于提高所述发光结构13的光取出率。所述透射层11为透明材质，可以是蓝宝石、树脂等，此处不作限制，该透射层11用于透光，可以将透射层11的上表面设置为图文状，如凹凸结构，以增大透射层的表面积从而提高其取光率。
所述发光器件10还包括第一垫19和第二垫20。所述第一垫19设置于所述第一电极16远离所述第一导电型半导体层133的表面的中部，与所述第一电极16电连接，用于向所述第一电极16传输电流。所述第二垫20设置于所述第二电极18远离所述第一电极层12的表面的中部位，与所述第二电极18电连接，用于向所述第二电极20传输电流。
具体地，以下按照对发光器件10的结构顺序对其包含的部件进行详细描述，另外，为了方便描述，暂且规定出光方向为朝上方向，显然，当参照对象发生变化时，针对本实施例的方位词应该对应改变。
第一电极层12设置于透射层11的下表面，第一电极层12为导电材料，该导电材料具有透光性能如Au、Al、Pd、Rh等，它们所形成的薄膜不仅可以导电还能透光，本发明不对材料作限制。
发光结构13设置于第一电极层12远离透射层11的表面，即第一电极层12的下表面，发光结构13包括第一导电型半导体层133、有源层132和第二导电型半导体层131。其中，有源层132设置于第一导电型半导体层133之上、第二导电型半导体层131设置于有源层132之上，所述第一导电型半导体层133、所述有源层132及所述第二导电型半导体层131三者电性连接以形成能发光的元件，该元件在上下表面分别连接异性电极后，即可通电发光。
其中，第一导电型半导体层133包括掺杂有第一类型离子的至少一个半导体层，当第一导电型半导体层133是N型半导体层时，第一导电型半导体层133可包括GaN、InN、AlN、InGaN、AlGaN、InAlGaN、AlInN、AlGaAs、GaP、GaAs、GaAsP或者AlGaInP中的至少一种，当第一类型离子是N型离子时，第一导电型半导体层133可包括Si、Ge、Sn、Se或者Te。
有源层132可包括III-V族化合物半导体。有源层132可包括单量子阱结构、多量子阱结构、量子线结构或者量子点结构中的至少一种。有源层132的阱层/势垒层可包括InGaN/GaN、GaN/AlGaN、或者InGaN/InGaN中的配对结构，但是实施方案不限于此。有源层132由具有取决于发出的光的波长的带隙的材料制成。例如，在波长为460～470nm的蓝色光的情况下，有源层132具有包括InGaN阱层/GaN势垒层的单量子阱结构或者多量子阱结构。有源层132可选择性地包括能够提供可见射线频带的光例如蓝色光、红色光和绿色光的材料，所述材料可在实施方案技术范围内进行改变。
所述第二导电型半导体层131包括掺杂有第二类型离子的至少一个半导体层，当第二导电型半导体层131是P型半导体层时，第二导电型半导体层131可包括GaN、InN、AlN、InGaN、AlGaN、InAlGaN、AlInN、AlGaAs、GaP、GaAs、GaAsP或者AlGaInP中的至少一种，当第二类型离子是P型离子时，第二导电型半导体层131可包括Mg、Zn、Ca、Sr或者Ba中的至少一种。
具体地，发光结构13中的第二导电型半导体层131的上表面与第一电极层12的下表面接触，因此，第二导电型半导体层131与第一电极层12之间可以均匀稳定地扩散电流。
第一电极16与所述发光结构13电性连接，具体地，第一电极16与发光 结构13中的第一导电型半导体层133远离有源层132的表面接触，以使电流更加均匀地在其与第一导电型半导体层133之间传输，第一电极16与第一导电型半导体层133下表面接触的具体部位不作限制。
第二电极18与第一电极层12接触，具体的，第二电极18贯穿发光结构13，与第一电极层12远离透射层11的表面接触，形成电连接，以通过第一电极层12将电流分散到第二导电型半导体层131。需要说明的是，第二电极18虽然贯穿发光结构13，但是与发光结构13之间不存在电性接触，具体地，在第二电极18与发光结构13之间设置绝缘层17，使得第二电极18不直接与发光结构13连接，而是通过第二电极层12间接地与发光结构13的第二导电型半导体层131连接，实现电流的传递。
绝缘层17所用到的材料包括但不限于有机固体绝缘材料：绝缘漆、绝缘胶、绝缘纸、绝缘纤维制品、塑料、橡胶、漆布漆管及绝缘浸渍纤维制品、电工用薄膜、复合制品和粘带、电工用层压制品等；无机固体绝缘材料主要有云母、玻璃、陶瓷及其制品等。
进一步地，第一电极16和第二电极18的材质可以是Ti、Al、In、Ta、Pd、Co、Ni、Si、Ge、Ag、Rh、Au、Ir、Pt、W或者Au中的至少一种或者多种混合物材料，但是本实施例不限于所述材料。另外，第一电极16和第二电极18各自的俯视结构包括但不限于直线图案、弯曲图案、直线图案和弯曲图案的混合图案、由一个图案分支的多个图案、多边形图案、栅格形图案、点形图案、菱形图案、平行四边形图案、网格形图案、条形图案、十字形图案、星形图案、圆形图案或者其混合图案，但是本实施方案不限于此。具有图案的第一电极16可对第一导电型半导体层133均匀供电，由此防止电流集中在一个位置上，具有图案的第二电极18可对第一电极层12均匀供电，由此防止电流集中在一个位置上。
再进一步地，第一电极16的下部可以形成第一垫19以平稳传输功率、第二电极18下部可以连接第二垫20以平稳传输功率，第一垫19和第二垫20可以是包含Ti、Al、In、Ta、Pd、Co、Ni、Si、Ge、Ag、Rh、Au、Ir、Pt、W或者Au的材料制作而成，本实施例不限制所述材料。
基于上述结构，可以给第一垫19接通电源正极，以使第一垫19获得来自 电源的电流，并将该电流传递给与其连接的第一电极16，第一电极16将电流扩散至与其连接的发光结构13中的第一导电型半导体层133，进一步地，发光结构13的第二导电型半导体层131将电流平稳地传递给与其连接的第一电极层12，再由第一电极层12将电流传递给第二电极18，进一步流向第二垫20，由第二垫20将电流传回电源负极，至此，形成了电流的闭合回路，发光结构13的第一导电型半导体层133有电流流入，第二导电型半导体层131有电流流出，因此发光。需要说明的是，第一电极16和第二电极18具体哪个连接正极哪个连接负极需要根据发光结构13的结构来确定，此处不对第一电极16和第二电极18的连接的电极作限定。
与现有技术相较，采用图1～2所示的发光器件10，将第一电极16和第二电极18这两个电极从发光器件10的出光面的背面凸出，不需要再从发光器件10的发光面引线，避免了与第一电极16和第二电极18相连的引线对光的吸收和遮挡，提高了出光率。进一步地，本发明的发光器件10在第一电极层12上面设置透射层11，通过该透射层11可使发出的光更加均匀，另外，可将透射层11上表面可设置为凹凸状，增大透射层11的表面积以提高光取出率。
请参阅图3和图4，图3是本发明实施例提供的另一种发光器件的立体结构示意图；图4是本发明实施例提供的图3的A-A’截面的结构示意图。所述发光器件10除了包括图2所示的发光结构10所包括的发光结构13、第一电极16、第一电极层12，第二电极18、绝缘层17、透射层11、第一垫19和第二垫20之外，还包括第二电极层14，该第二电极层14设置于第一导电型半导体层133远离绝缘层的表面，第一电极16通过第二电极层14连接第一导电型半导体层133，以均匀地将电流传输给第一导电型半导体层133，避免了电流集中在一块传输，其中，所述第二电极层14覆盖第一导电型半导体层133的整个下表面。进一步地，第二电极层14设有一缺口，与第二电极16电性连接的第二垫20从该缺口凸出，以连接外部引线，另外，在第二电极层14与第二垫20之间设置绝缘层17，防止第二电极层14与第二垫20电连接而导致整个发光器件10短路。需要说明的是，第二电极层14所使用的材料包括但不限于Ag、Ni、Al、Rh、Pd、Ir、Ru、Mg、Zn、Pt、Au、Hf。
与现有技术相较，采用图3～4所示的发光器件10，将第一电极16和第二 电极18这两个电极从发光器件10的出光面的背面凸出，不需要再从发光器件10的发光面引线，避免了与第一电极16和第二电极18相连的引线对光的吸收和遮挡，提高了出光率。进一步地，本发明的发光器件10在第一电极层12上面设置透射层11，通过该透射层11可使发出的光更加均匀，另外，可将透射层11上表面可设置为凹凸状，增大透射层11的表面积以提高光取出率；在透射层11与第二导电型半导体层131之间设置第一电极层，使得由第二电极18传出的电流能够通过第一电极层12均匀地分散到第二导电型半导体层131上，在第一电极16与第一导电型半导体层133之间设置第二电极层14，使得由第一电极16传出的电流能够通过第二电极层14均匀地分散到第一导电型半导体层133上，提高了发光结构13的发光性能。
请参阅图5和图6，图5是本发明实施例提供的另一种发光器件的立体结构示意图；图6是本发明实施例提供的图5的A-A’截面的结构示意图。所述发光器件10除了包括图4所示的发光结构10所包括的发光结构13、第一电极16、第一电极层12，第二电极18、绝缘层17、透射层11、第一垫19、第二垫20以及第二电极层14之外，还包括反射层15；该反射层15设置于第二电极层14远离第一导电型半导体层133的整个表面，用于反射发从光结构13从第一导电型半导体层133发散的光，提高发光器件10的光取出率。
进一步地，反射层15设有两个缺口，第一电极16或者第一垫19从其中一个缺口凸出以连接外部引线，第二垫20从另外一个缺口凸出以连接外部引线。
需要说明的是，反射层15可以是Al、Ag等金属材料，当为金属材料时，反射层15与第二垫20之间还应设置绝缘层17，反射层15也可以是PVC、PU等高分子材料，本发明实施例不对构成反射层15的材料作限制，但是，本实施例优选绝缘的高分子作为反射层15的材料来源，这样不断能起到反光的作用，还能够与外部绝缘，提高安全性。
与现有技术相较，采用图5～6所示的发光器件10，将第一电极16和第二电极18这两个电极从发光器件10的出光面的背面凸出，不需要再从发光器件10的发光面引线，避免了与第一电极16和第二电极18相连的引线对光的吸收和遮挡，提高了出光率。进一步地，本发明的发光器件10在第一电极层12 上面设置透射层11，通过该透射层11可使发出的光更加均匀，另外，可将透射层11上表面可设置为凹凸状，增大透射层11的表面积以提高光取出率；在透射层11与第二导电型半导体层131之间设置第一电极层，使得由第二电极18传出的电流能够通过第一电极层12均匀地分散到第二导电型半导体层131上，在第一电极16与第一导电型半导体层133之间设置第二电极层14，使得由第一电极16传出的电流能够通过第二电极层14均匀地分散到第一导电型半导体层133上，提高了发光结构13的发光性能；在第二电极层14远离第一导电型半导体层133的表面设置反射层15，将发光结构13从第一导电型半导体层133发散的光反射到发光结构13的出光面，提高了发光器件10的出光率。
图7～17是本发明实施例提供的一种发光器件的工艺流程图，该工艺用于制作图5～6所示的发光器件10。
如图7，在透射层11上形成第一电极层12，第一电极层12可以由Au、Al等形成的薄膜构成，从而可以透光，并且具备导电性能。
在第一电极层12上形成发光结构13，其中，发光结构13依次包括层叠的第一导电型半导体层133、有源层132和第二导电型半导体层131。
在第一导电型半导体层133上形成有源层132。有源层132可包括III-V族化合物半导体。有源层132可包括单量子阱结构、多量子阱结构、量子线结构和量子点结构中的至少一种。有源层132的阱层/势垒层可包括InGaN/GaN、GaN/AlGaN、或者InGaN/InGaN中的配对结构，但是实施方案不限于此。
在有源层132下可提供第一导电覆层。在有源层132下可提供第二导电覆层。第一和第二导电覆层可包括GaN基半导体，并且带隙高于有源层132的带隙。
有源层132可包括发出彩色光例如蓝色光、红色光或者绿色光的材料，所述材料在实施方案的技术范围内可进行改变。
在有源层132上形成第二导电型半导体层131，第二导电型半导体层131包括掺杂有第二类型离子的至少一个半导体层和包括第二电极接触层。当第二导电型半导体层131是P型半导体层时，第二导电型半导体层131可包括GaN、InN、AlN、InGaN、AlGaN、InAlGaN、AlInN、AlGaAs、GaP、GaAs、GaAsP或者AlGaInP中的至少一种。当第二类型离子是P型离子时，第二导电型半导 体层131可包括Mg、Zn、Ca、Sr和Ba中的至少一种。
如图8，通过蚀刻工艺在发光结构13上开设第一凹槽134，该第一凹槽134为发光结构13的一个贯通空腔，以暴露与发光结构13相连接的第一电极层12；
如图9，第一凹槽134用于安置第二电极18，使得第二电极18与第一电极层12建立电性连接，其中，发光结构13与第二电极18之间产生第一间隙135；
如图10，在第一间隙135中填充绝缘层17，以使第二电极18固定在发光结构13中，使其与第一电极层12电性连接的同时，与发光结构13绝缘；绝缘层17所用到的材料包括但不限于有机固体绝缘材料：绝缘漆、绝缘胶、绝缘纸、绝缘纤维制品、塑料、橡胶、漆布漆管及绝缘浸渍纤维制品、电工用薄膜、复合制品和粘带、电工用层压制品等；无机固体绝缘材料主要有云母、玻璃、陶瓷及其制品等，本实施例不对绝缘层17用到的材料作限制。
如图11，在发光结构13和绝缘层17上渡制第二电极层14，该第二电极层14所使用的材料包括但不限于Ag、Ni、Al、Rh、Pd、Ir、Ru、Mg、Zn、Pt、Au、Hf。
如图12，通过蚀刻工艺在第二电极层14上开设第二凹槽141，第二凹槽141贯穿第二电极层14和与第二电极层14接触的绝缘层17，从而暴露出第二电极18；
如图13，在第二凹槽141中设置第二垫20，第二垫20的一端与暴露出的第二电极18电连接，第二垫20的另一端凸出第二电极层14的表面，其中，第二垫20与第一电极层14之间形成第二间隙142；
如图14，在第二间隙142中，即第二垫20与第二电极层14之间渡制绝缘层17，避免第二垫20与第二电极层14接触而使整个发光器件10短路；
如图15，使用电镀工艺在第一电极层14上渡制第一电极16；
如图15，使用电镀工艺在第一电极16上渡制第一垫19；
如图27，在第一电极层14上表面不与其他结构接触的部分渡制反射层15，该反射层15的厚度不作限制。
需要说明的是，以上实施例中，层与层之间的连接处可以设置为凹凸状， 以增强连接的紧密度，各层的厚度此处以不作限制，可根据实际需要设置厚度；另外，上述工艺流程只是一种可选的实施方式，显然，基于本发明的发光器件10，还有其他的工艺可以达到该效果，此处不再一一举例。
如图18是本发明实施例提供的一种发光器件封装50的侧截面图，以下具体结合发光器件的结构进行描述。
参考图18，发光器件封装50包括：主体51、设置在主体51上的第一和第二引线电极52和53、设置于主体51中并与第一和第二引线电极52和53电连接的图1～6所对应的实施方案中的发光器件10、以及包围发光器件10的模制元件54。
主体51可包括硅、合成树脂等如PPA或者金属材料。在发光器件10周围可形成倾斜表面。主体51可具有上部打开的腔结构。在腔中可提供发光器件10。
第一和第二引线电极52和53彼此绝缘并对发光器件10供电。第一和第二引线电极52和53可将来自发光器件10的热排放至外部。
发光器件10可安装在主体51上，或者安装说在第一引线电极52和第二引线电极53上。
发光器件10可通过第一垫和第二垫支撑在引线(52和53)上，减小了发光器件10与主体51之间的接触面积，有利于散热导线。
模制元件54可通过包围发光器件10来保护发光器件10。模制元件54包括磷光体以改变从发光器件10发射的光的波长。在模制元件54上可形成透镜。
将上述任一实施方案的发光器件10封装在包括树脂或者硅的半导体衬底、绝缘衬底或者陶瓷衬底上，使得半导体发光器件10用作光源，用于指示器件、照明装置、显示器等。各个实施方案均可选择性地适合于另一实施方案。
综上所述，采用本发明的发光器件10，将第一电极16和第二电极18这两个电极从发光器件10的出光面的背面凸出，不需要再从发光器件10的发光面引线，避免了与第一电极16和第二电极18相连的引线对光的吸收和遮挡，提高了出光率。进一步地，本发明的发光器件10在第一电极层12上面设置透射层11，通过该透射层11可使发出的光更加均匀，另外，可将透射层11上表面可设置为凹凸状，增大透射层11的表面积以提高光取出率；在透射层11 与第二导电型半导体层131之间设置第一电极层，使得由第二电极18传出的电流能够通过第一电极层12均匀地分散到第二导电型半导体层131上，在第一电极16与第一导电型半导体层133之间设置第二电极层14，使得由第一电极16传出的电流能够通过第二电极层14均匀地分散到第一导电型半导体层133上，提高了发光结构13的发光性能；在第二电极层14远离第一导电型半导体层133的表面设置反射层15，将发光结构13从第一导电型半导体层133发散的光反射到发光结构13的出光面，提高了发光器件10的出光率。
以上所揭露的仅为本发明一种较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (18)

  1. 一种发光器件，其中，包括：
    发光结构，所述发光结构包括依次层叠设置的第一导电型半导体层、有源层和第二导电型半导体层，其中，所述第二导电型半导体层作为所述发光结构的出光面；
    第一电极，所述第一电极设置于所述第一导电型半导体层远离所述有源层的表面，且与所述第一导电型半导体层电连接；
    第一电极层，所述第一电极层设置于所述第二导电型半导体层远离所述有源层的表面，且与所述第二导电型半导体层电连接；
    第二电极，所述第二电极贯穿所述发光结构，并与所述第一电极层电连接；
    绝缘层，所述绝缘层设置于所述发光结构与所述第二电极之间。
  2. 根据权利要求1所述的发光器件，其中，所述发光器件还包括反射层，所述反射层设置于所述第一导电型半导体层远离所述有源层的表面，所述第一电极和所述第二电极贯穿所述反射层。
  3. 根据权利要求1所述的发光器件，其中，所述发光器件还包括透射层，所述透射层设置于所述第一电极层远离所述第二导电型半导体层的表面，所述透射层用于提高所述发光结构的光取出率。
  4. 根据权利要求3所述的发光器件，其中，所述透射层远离所述第一电极层的表面为凹凸状。
  5. 根据权利要求1所述的发光器件，其中，所述发光器件还包括第二电极层，所述第二电极层设置于所述第一导电型半导体层远离所述绝缘层的表面，所述第一电极与所述第一导电型半导体层通过所述第二电极层电连接，所述第二电极贯穿所述第二电极层，所述绝缘层还设置于所述第二电极与所述第二电极层之间。
  6. 根据权利要求5所述的发光器件，其中，所述发光器件还包括反射层，所述反射层设置于所述第二电极层远离所述第一导电型半导体层的表面，所述第一电极和所述第二电极贯穿所述反射层。
  7. 根据权利要求1所述的发光器件，其中，所述发光结构还包括第一垫和第二垫，所述第一垫设置于所述第一电极远离所述第一导电型半导体层的表面，所述第一垫用于和所述第一电极电连接；所述第二垫设置于所述第二电极远离所述第一电极层的表面，所述第二垫用于和所述第二电极电连接。
  8. 根据权利要求7所述的发光器件，其中，所述发光器件还包括第二电极层，所述第二电极层设置于所述第一导电型半导体层远离所述绝缘层的表面，所述第一电极与所述第一导电型半导体通过所述第二电极层电连接，所述第二垫贯穿所述第二电极层，所述绝缘层还设置于所述第二电极与所述第二电极层之间，以及所述第二垫与所述第二电极层之间。
  9. 根据权利要求8所述的发光器件，其中，所述发光器件还包括反射层，所述反射层设置于所述第二电极层远离所述第一导电型半导体层的表面，所述第一电极或所述第一垫贯穿所述反射层，并且所述第二电极或所述第二垫贯穿所述反射层。
  10. 一种发光器件封装，包括发光器件，其中，所述发光器件包括：
    发光结构，所述发光结构包括依次层叠设置的第一导电型半导体层、有源层和第二导电型半导体层，其中所述第二导电型半导体层作为所述发光结构的出光面；
    第一电极，所述第一电极设置于所述第一导电型半导体层远离所述有源层的表面，且与所述第一导电型半导体层电连接；
    第一电极层，所述第一电极层设置于所述第二导电型半导体层远离所述有源层的表面，且与所述第二导电型半导体层电连接；
    第二电极，所述第二电极贯穿所述发光结构，并与所述第一电极层电连接；
    绝缘层，所述绝缘层设置于所述发光结构于所述第二电极之间。
  11. 根据权利要求10所述的发光器件封装，其中，所述发光器件还包括反射层，所述反射层设置于所述第一导电型半导体层远离所述有源层的表面，所述第一电极和所述第二电极贯穿所述反射层。
  12. 根据权利要求10所述的发光器件封装，其中，所述发光器件还包括透射层，所述透射层设置于所述第一电极层远离所述第二导电型半导体层的表面，所述透射层用于提高所述发光结构的光取出率。
  13. 根据权利要求12所述的发光器件封装，其中，所述透射层远离所述第一电极层的表面为凹凸状。
  14. 根据权利要求10所述的发光器件封装，其中，所述发光器件还包括第二电极层，所述第二电极层设置于所述第一导电型半导体层远离所述绝缘层的表面，所述第一电极与所述第一导电型半导体层通过所述第二电极层电连接，所述第二电极贯穿所述第二电极层，所述绝缘层还设置于所述第二电极与所述第二电极层之间。
  15. 根据权利要求14所述的发光器件封装，其中，所述发光器件还包括反射层，所述反射层设置于所述第二电极层远离所述第一导电型半导体层的表面，所述第一电极和所述第二电极贯穿所述反射层。
  16. 根据权利要求10所述的发光器件封装，其中，所述发光结构还包括第一垫和第二垫，所述第一垫设置于所述第一电极远离所述第一导电型半导体层的表面，所述第一垫用于和所述第一电极电连接；所述第二垫设置于所述第二电极远离所述第一电极层的表面，所述第二垫用于和所述第二电极电连接。
  17. 根据权利要求16所述的发光器件封装，其中，所述发光器件还包括第二电极层，所述第二电极层设置于所述第一导电型半导体层远离所述绝缘层的表面，所述第一电极与所述第一导电型半导体通过所述第二电极层电连接，所述第二垫贯穿所述第二电极层，所述绝缘层还设置于所述第二电极与所述第二电极层之间，以及所述第二垫与所述第二电极层之间。
  18. 根据权利要求17所述的发光器件封装，其中，所述发光器件还包括反射层，所述反射层设置于所述第二电极层远离所述第一导电型半导体层的表面，所述第一电极或所述第一垫贯穿所述反射层，并且所述第二电极或所述第二垫贯穿所述反射层。
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