WO2016106784A1 - 一种像素结构及液晶显示面板 - Google Patents
一种像素结构及液晶显示面板 Download PDFInfo
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- WO2016106784A1 WO2016106784A1 PCT/CN2015/070099 CN2015070099W WO2016106784A1 WO 2016106784 A1 WO2016106784 A1 WO 2016106784A1 CN 2015070099 W CN2015070099 W CN 2015070099W WO 2016106784 A1 WO2016106784 A1 WO 2016106784A1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/122—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode having a particular pattern
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Definitions
- the present invention relates to the field of liquid crystal display, and in particular to a pixel structure and a liquid crystal display panel.
- Liquid crystal display has long occupied the dominant position of flat panel display, which mainly realizes the display of different screens by controlling the deflection of liquid crystal molecules in the electric field, wherein the liquid crystal molecules change according to the change of the electric field, and the changed electric field is controlled by the common electrode and the pixel. Produced by the voltage on the electrode.
- the display of the picture is realized by controlling each pixel on the screen. Therefore, in the liquid crystal display panel, voltage control of the electrode corresponding to each pixel point is required, and then the implementation is performed.
- the pixel points correspond to the control of the moving direction of the liquid crystal molecules.
- the arrangement of the electrodes is an important part of the pixel structure corresponding to the formation of the pixel points, and the control effects of the different pixel structures on the liquid crystal molecules are also different.
- the electric field generated between the electrodes may have a weak effective electric field.
- the liquid crystal molecules cannot rotate effectively, and the light cannot pass, resulting in insufficient optical transmittance of the liquid crystal pixel structure;
- the electric field between the electrodes also has a weak lateral electric field, resulting in insufficient ability to control the direction of movement of the liquid crystal molecules, and it is impossible to form a uniform and stable liquid crystal alignment, and even a disclination line is likely to occur.
- the invention provides a pixel structure to solve the problem that the optical transmittance of the liquid crystal pixel structure in the prior art is low or the liquid crystal alignment is not uniform and stable.
- the present invention provides a pixel structure including: a pixel electrode layer and an insulating layer, and the pixel electrode layer is laid over the insulating layer.
- the insulating layer comprises a patterned first insulating region and a non-patterned second insulating region.
- the pixel electrode layer includes an unpatterned first pixel electrode region laid over the first insulating region, and a patterned second pixel electrode region disposed over the second insulating region; the second insulating region surrounds the first insulating region, The second pixel electrode region surrounds the first pixel electrode region; the patterned first insulating region is a trench structure, and the patterned second pixel electrode region has a strip structure.
- the boundary of the first insulating region is a rectangle, a prism, an ellipse or an irregular geometric figure.
- the present invention further provides a pixel structure including: a pixel electrode layer and an insulating layer, wherein the pixel electrode layer is laid over the insulating layer.
- the insulating layer comprises a patterned first insulating region and a non-patterned second insulating region.
- the pixel electrode layer includes an unpatterned first pixel electrode region laid over the first insulating region, and a patterned second pixel electrode region laid over the second insulating region.
- the second insulating region surrounds the first insulating region, and the second pixel electrode region surrounds the first pixel electrode region.
- the boundary of the first insulating region is a rectangle, a prism, an ellipse or an irregular geometric figure.
- the first insulating region surrounds the second insulating region, and the first pixel electrode region surrounds the second pixel electrode region.
- the boundary of the second insulating region is a rectangle, a prism, an ellipse or an irregular geometric figure.
- the patterned first insulating region is a trench structure
- the patterned second pixel electrode region is a strip structure
- the groove structure comprises a groove and a protrusion, wherein all the grooves have the same width, and all the protrusions have the same width.
- the depth of the groove is smaller than the thickness of the insulating layer.
- the pixel electrode layer uses an ITO electrode.
- the present invention also provides a liquid crystal display panel including a pixel structure, the pixel structure including a pixel electrode layer and an insulating layer, and the pixel electrode layer is laid over the insulating layer.
- the insulating layer comprises a patterned first insulating region and a non-patterned second insulating region.
- the pixel electrode layer includes an unpatterned first pixel electrode region laid over the first insulating region, and a patterned second pixel electrode region laid over the second insulating region.
- the second insulating region surrounds the first insulating region, and the second pixel electrode region surrounds the first pixel electrode region.
- the boundary of the first insulating region is a rectangle, a prism, an ellipse or an irregular geometric figure.
- the first insulating region surrounds the second insulating region, and the first pixel electrode region surrounds the second pixel electrode region.
- the boundary of the second insulating region is a rectangle, a prism, an ellipse or an irregular geometric figure.
- the patterned first insulating region is a trench structure
- the patterned second pixel electrode region is a strip structure
- the groove structure comprises a groove and a protrusion, wherein all the grooves have the same width, and all the protrusions have the same width.
- the depth of the groove is smaller than the thickness of the insulating layer.
- the pixel electrode layer uses an ITO electrode.
- the pixel structure of the present invention comprises a pixel electrode layer and an insulating layer, the electrode layer is laid over the insulating layer;
- the insulating layer comprises a patterned first insulating region and an unpatterned first
- the second insulating region, the corresponding pixel electrode layer laid over the insulating layer also includes a non-patterned first electrode region and a patterned second electrode region.
- the electrode of the first pixel electrode region is laid along the pattern of the first insulating region, and the first pixel electrode region is an unetched electrode layer without a pattern, that is, the electrode of the first pixel electrode region has no gap.
- the liquid crystal molecules corresponding to the first pixel electrode region have a strong effective electric field, and correspondingly have a high optical transmittance; on the other hand, the electrodes of the second pixel electrode region are laid in the second insulating region without a pattern. Therefore, the electrodes in the patterned second pixel electrode region have intervals, and a strong lateral electric field can be generated to control the alignment of the liquid crystal to form a uniform and stable liquid crystal alignment.
- the pixel structure in the present invention uses a combination of the two, so that the liquid crystal region of the entire pixel structure can simultaneously have a high optical transmittance and a uniform and stable liquid crystal alignment.
- FIG. 1 is a schematic structural view of an embodiment of a pixel structure of the present invention.
- Figure 2 is a cross-sectional view taken along line A-A and direction B-B of Figure 1;
- FIG. 3 is a schematic view showing a pixel structure in which the boundary of the insulating region of the inner ring is prismatic;
- FIG. 4 is a schematic view showing a pixel structure in which an insulating region boundary of an inner ring is elliptical;
- FIG. 5 is a pattern of a first insulating region or a second pixel electrode region in a pixel structure of the present invention
- FIG. 6 is another pattern of a first insulating region or a second pixel electrode region in a pixel structure of the present invention.
- FIG. 7 is a schematic diagram of the pixel structure of FIG. 1 and the optical transmittance of a conventional pixel structure at different voltages;
- Figure 8 is a picture of the pixel structure shown in Figure 1 and a conventional pixel structure under an optical microscope;
- FIG. 9 is a schematic structural view of an embodiment of a liquid crystal display panel of the present invention.
- FIG. 10 is a schematic view showing a pixel structure in the liquid crystal display panel shown in FIG. 9.
- FIG. 10 is a schematic view showing a pixel structure in the liquid crystal display panel shown in FIG. 9.
- FIG. 1 is a schematic structural view of an embodiment of a pixel structure of the present invention
- FIG. 2 is a cross-sectional view taken along line A-A and B-B of FIG.
- the present embodiment provides a pixel structure 100 including an insulating layer 12 and a pixel electrode layer 14, wherein the insulating layer 12 includes a patterned first insulating region 120 and a non-patterned second insulating region 122; the pixel electrode layer 14 The first pixel electrode region 140 and the patterned second pixel electrode region 142 are included; and the first pixel electrode region 140 is laid on the first insulating region 120, and the second pixel electrode region 142 is laid in the second insulating region. 122.
- the pixel structure 100 in this embodiment further includes a common electrode layer 11 and a liquid crystal layer 13 disposed between the common electrode layer 11 and the pixel electrode layer 14.
- the liquid crystal display panel corresponding to the pixel structure 100 is VA Mode, it should be understood that the pixel structure 100 can also correspond to other modes of the display panel.
- the liquid crystal layer 13 is vertically aligned, and the liquid crystal display panel is in a normally black mode.
- the liquid crystal molecules rotate under the action of the electric field, so that the light can pass through the liquid crystal layer 13.
- the gray level of the pixel can be controlled by the voltage, and the gray scale change of the RGB sub-pixel in the pixel can realize the liquid crystal display. The change in color.
- the first insulating region 120 of the insulating layer 12 is patterned by a photolithography process or an imprint process, and then the electrode is directly laid in the first insulating region 120 by a process such as chemical deposition, coating or tableting.
- the first pixel electrode region 140 is formed to form the pixel electrode layer 14.
- the electrodes are patterned by a photolithography process, and specifically, a layer is formed on the second insulating region 122 by a process such as chemical deposition, coating or tableting.
- the electrode is then laser etched to form a pattern that forms a patterned second pixel electrode region 142 on the unpatterned second insulating region 122.
- the first pixel electrode region 140 Since the electrodes of the first pixel electrode region 140 are continuously laid along the pattern of the first insulating region 120, the first pixel electrode region 140 does not have a hollow region, and the continuously laid electrodes generate an effective electric field perpendicular to the electrode layer, and at the same time
- the lateral electric field parallel to the electrode layer is correspondingly weaker, and the stronger effective electric field causes the liquid crystal layer of the first pixel electrode region 140 to have a higher optical transmittance, and the weaker lateral electric field also makes the corresponding Liquid crystal molecules are easily affected by the fringe field effect, and move away from the normal direction, and then the arrangement direction changes discontinuously, and the disclination line is easily generated.
- the so-called fringe field effect that is, the mutual influence of different control voltages between two adjacent pixel points, causes a horizontal electric field to be generated between adjacent electrodes of adjacent pixel points, which in turn affects the motion of liquid crystal molecules in each pixel point.
- the second pixel electrode region 142 has a patterned electrode, and the effective electric field at the hollow pattern is weak, so the corresponding optical transmittance is also low, and the liquid crystal molecules at the boundary are twisted due to the presence of the hollow pattern. It will lead to a decrease in optical transmittance, and a strong lateral electric field is easily formed at the boundary, which facilitates the movement of liquid crystal molecules to form a uniform and stable liquid crystal alignment, and the fringe field effect is compared with the lateral electric field, and the liquid crystal molecules
- the motion of the second pixel electrode region 142 is relatively low in optical transmittance, and the corresponding liquid crystal molecules are not easily deviated from the normal direction, and the disclination line is not easily generated.
- the pixel structure 100 has both the first pixel electrode region 14 and the second pixel electrode region 142, and the electric fields formed by the two electrode regions and the common electrode layer 11 can generate liquid crystal molecules of the entire liquid crystal layer 13 . Therefore, the movement of the liquid crystal molecules is not easily affected by the fringe field effect, so that the entire pixel structure 100 can have both good optical transmittance and relatively uniform and stable liquid crystal alignment.
- the first insulating region 120 can be disposed around the second insulating region 122, and the boundary of the second insulating region 122 can be rectangular. , prismatic, elliptical or irregular geometry; the second insulating region 122 may also be disposed around the first insulating region 120, and the boundary of the first insulating region 120 may be rectangular, prismatic, elliptical or irregular geometry Graphics.
- FIG. 3 is a schematic diagram of a pixel structure in which the boundary of the insulating region of the inner ring is prismatic
- FIG. 4 is a schematic diagram of a pixel structure in which the boundary of the insulating region of the inner ring is elliptical.
- the second pixel electrode region 142 can generate a strong lateral electric field, so that the periphery is The liquid crystal molecules are less affected by the fringe field effect, and the disclination line is not easily generated; and the first pixel electrode region 140 of the inner ring of the pixel structure 100 can generate a strong effective electric field, so that the optical transmittance of the inner ring is high, and the pixel structure 100 overall effect is better.
- the area ratio of the first insulating region 120 to the second insulating region 122 is 1:1, and the corresponding first pixel electrode region 140 and second pixel electrode region 142 are The area ratio is also 1:1; if the light source system is improved, it is possible to make people not aware of the dark lines, that is, to avoid the misalignment, and the area ratio of the first insulating region 120 to the second insulating region 122 is 1:2, the area ratio of the corresponding first pixel electrode region 140 to the second pixel electrode region 142 is also 1:2; similarly, for the entire liquid crystal display panel, the optical transmittance is more important, then
- the area ratio of an insulating region 120 to the second insulating region 122 is set to 2:1, and the area ratio of the corresponding first pixel electrode region 140 to the second pixel electrode region 142 is also 2:1.
- the area ratios described above may also be selected from ratio values of 1:3, 2:3, and 3:5.
- the lateral electric field generated by the first pixel electrode region 140 is weak, and the liquid crystal molecules at the periphery are subjected to the fringe field effect.
- the influence is large; while the lateral electric field of the second pixel electrode region 142 in the inner ring is strong, that is, the liquid crystal molecules at the center position are less affected by the fringe field effect.
- the area of the first pixel electrode region 140 is small, liquid crystal molecules correspondingly affected by the fringe field effect are also less, and it is relatively easy to form a disclination line. Therefore, the area ratio of the first insulating region and the second insulating region is generally selected to be 1:1 or 1:2. The area ratios described above may also be selected from ratio values of 1:3, 2:3, and 3:5.
- the second insulating region 122 and the patterned second pixel electrode region 142 are used as the periphery of the pixel structure 100, and the first insulating region 120 of the inner ring has a rectangular boundary, and the first insulating region 120 and the first insulating region 120 The area ratio of the two insulating regions 122 is 1:1.
- the pattern of the first insulating region 120 and the pattern of the second pixel electrode region 142 are both patterns emitted in four directions centering on the same point.
- FIG. 5 is a pattern of the first insulating region or the second pixel electrode region in the pixel structure of the present invention
- FIG. 6 is a pixel structure of the present invention.
- Another pattern of the first insulating region or the second pixel electrode region, so that the patterns of the two can also be selected to be symmetrically emitted in two directions, or a plurality of regularly arranged hexagon patterns.
- patterns emitted in three or more directions, a plurality of regular or irregularly arranged triangular or square patterns, and the like are also conceivable.
- the patterned first insulating region 120 is a trench structure having spaced grooves and protrusions.
- the widths of all the grooves are a
- the width of all the protrusions is also b, wherein a may be equal to or not equal to b; and in order to prevent the groove from becoming hollow, the electrode of the first pixel electrode region 140 cannot be carried, and the pattern of the first insulating region 120 is formed.
- the depth h of the groove does not exceed the thickness of the insulating layer.
- the patterned second pixel electrode region 142 has a strip structure, and is also based on process manufacturing considerations, such that the widths of all the strip electrodes are set to c, and the width of the two electrode electrodes is set to d, where c can be equal to or not Equal to d.
- the insulating layer 12 in practical applications, it is generally a glass substrate having a main thickness of 0.7 mm or 0.5 mm, and 0.5 mm is used in this embodiment. Therefore, the groove depth of the first insulating region 120 is generally set to 0.3 mm. If the manufacturing can achieve higher processing precision requirements, the groove depth can also be set to 0.4 mm, and the corresponding first pixel electrode region 140 is grooved and convex.
- the upper electrode is capable of generating a relatively large lateral electric field, which avoids the disclination line to some extent.
- the electrodes of the first pixel electrode region 140 and the second pixel electrode region 142 are selected to have the same thickness, and the bump width b and the strip electrode width c are both 7 um, and the groove width a and two The strip electrode spacing width d is 3 um.
- the above width values can also be set to be different, or other values.
- the electrodes of the pixel electrode layer 14 and the common electrode layer 11 are each made of an ITO electrode.
- ITO electrode In order to provide the light transmittance, in the present embodiment, the electrodes of the pixel electrode layer 14 and the common electrode layer 11 are each made of an ITO electrode.
- other electrode materials such as a metal compound may be used.
- FIG. 7 and FIG. 1 is a schematic diagram of a pixel structure and an optical transmittance of a conventional pixel structure at different voltages
- FIG. 8 is a picture of the pixel structure shown in FIG. 1 and a conventional pixel structure under an optical microscope.
- the optical transmittance is represented by the brightness. It can be seen that the optical transmittance of the pixel structure 100 is larger than that of the conventional pixel structure. It can be seen from Fig. 8 that the conventional pixel structure may have obvious dark lines or The misalignment line, while the pixel structure 100 has no apparent dark lines and avoids the disclination line, that is, has both high optical transmittance and uniform and stable liquid crystal alignment.
- the pixel structure of the embodiment includes a pixel electrode layer and an insulating layer, and the insulating layer includes a patterned first insulating region and a non-patterned second insulating region, correspondingly laid over the insulating layer.
- the pixel electrode layer also includes a non-patterned first electrode region and a patterned second electrode region. Wherein, the electrodes of the first pixel electrode region are laid along the pattern of the first insulating region, and there is no gap between the electrodes, so the liquid crystal molecules corresponding to the first pixel electrode region have a strong effective electric field, and correspondingly have high optical wear.
- the transmittance of the second pixel electrode region is laid in the second insulating region without pattern, so that the electrodes in the patterned second pixel electrode region have intervals, which can generate a strong lateral electric field to control the alignment of the liquid crystal Forming a uniform and stable liquid crystal alignment.
- the pixel structure in the present invention uses a combination of the two, so that the liquid crystal region of the entire pixel structure can simultaneously have a high optical transmittance and a uniform and stable liquid crystal alignment.
- FIG. 9 is a schematic structural view of an embodiment of a liquid crystal display panel of the present invention.
- the present embodiment provides a liquid crystal display panel 900 in which a light source 901, a lower polarizing plate 902, a pixel structure 903, and an upper polarizing plate 904 are disposed in this order from bottom to top.
- a driving device 905 for providing the pixel structure 903 with a desired drive control signal.
- the pixel structure 903 includes an insulating layer 9031, a pixel electrode layer 9032, a liquid crystal layer 9033, and a common electrode layer 9034.
- FIG. 10 is a schematic diagram of a pixel structure in the liquid crystal display panel shown in FIG. Since the pixel electrode layer is laid on the insulating layer, the pixel electrode layer 9032 is exemplified in FIG. 10 as an example.
- the sub-pixel structure of the three primary colors RGB is sequentially arranged, and each sub-pixel structure has a first pixel electrode region 9035 on the inner ring and a second pixel electrode region 9036 on the outer ring.
- the sub-pixel structure in FIG. 10 is similar to that in FIG.
- the pixel structure 100 can achieve better optical transmittance and relatively uniform and stable liquid crystal alignment.
- the pixel structure used in the liquid crystal display panel of the embodiment can achieve high optical transmittance and uniform and stable liquid crystal alignment. Therefore, the liquid crystal panel in the embodiment can also have a better display effect. .
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Abstract
提供了一种像素结构(100)及包括像素结构(100)的液晶显示面板,其中像素结构(100)包括绝缘层(12)以及铺设于绝缘层(12)上方的像素电极层(14),绝缘层(12)包括图案化的第一绝缘区(120)和无图案化的第二绝缘区(122),像素电极层(14)包括铺设在第一绝缘区(120)上方的无图案化的第一像素电极区(140),以及铺设在第二绝缘区(122)上方的图案化的第二像素电极区(142)。因此,能够同时获得均匀稳定的液晶配向以及较高的光学穿透率。
Description
【技术领域】
本发明涉及液晶显示领域,特别是涉及一种像素结构及液晶显示面板。
【背景技术】
液晶显示早已占据平板显示器的主导地位,其主要通过控制液晶分子在电场内的偏转来实现不同画面的显示,其中液晶分子根据电场的变化而变化,而变化的电场则是通过控制公共电极及像素电极上的电压而产生的。由于在显示技术中,一般是通过对该画面上每个像素点进行控制来实现画面的呈现,因此,液晶显示面板中,需要对每个像素点所对应的电极进行电压控制,继而实现对该像素点对应液晶分子运动方向的控制。
电极的布置结构是形成像素点所对应的像素结构的一个重要部分,而不同的像素结构对液晶分子的控制效果也不一样。
对于现有的液晶像素结构,其中电极之间所产生的电场会出现有效电场较弱的情况,此时液晶分子不能发生有效旋转,光线无法通过,导致液晶像素结构光学穿透率不足;另外,电极之间的电场也会出现侧向电场较弱的情况,导致控制液晶分子运动方向的能力不足,无法形成均匀稳定的液晶配向,甚至容易出现向错线。
【发明内容】
本发明提供一种像素结构,以解决现有技术中液晶像素结构存在的光学穿透率较低或液晶配向不够均匀稳定的问题。
为解决上述技术问题,本发明提供一种像素结构,包括:像素电极层和绝缘层,像素电极层铺设在绝缘层上方。其中,绝缘层包括图案化的第一绝缘区和无图案化的第二绝缘区。像素电极层包括铺设在第一绝缘区上方的无图案化的第一像素电极区,以及铺设在第二绝缘区上方的图案化的第二像素电极区;第二绝缘区围绕第一绝缘区,第二像素电极区围绕第一像素电极区;图案化的第一绝缘区为沟槽结构,图案化的第二像素电极区为条状结构。
其中,第一绝缘区的边界为矩形、棱形、椭圆形或不规则几何图形。
为解决上述技术问题,本发明又提供一种像素结构,包括:像素电极层和绝缘层,像素电极层铺设在绝缘层上方。其中,绝缘层包括图案化的第一绝缘区和无图案化的第二绝缘区。像素电极层包括铺设在第一绝缘区上方的无图案化的第一像素电极区,以及铺设在第二绝缘区上方的图案化的第二像素电极区。
其中,第二绝缘区围绕第一绝缘区,第二像素电极区围绕第一像素电极区。
其中,第一绝缘区的边界为矩形、棱形、椭圆形或不规则几何图形。
其中,第一绝缘区围绕第二绝缘区,第一像素电极区围绕第二像素电极区。
其中,第二绝缘区的边界为矩形、棱形、椭圆形或不规则几何图形。
其中,图案化的第一绝缘区为沟槽结构,图案化的第二像素电极区为条状结构。
其中,沟槽结构包括凹槽和凸起,其中所有凹槽的宽度相同,所有凸起的宽度相同。
其中,凹槽的深度小于绝缘层的厚度。
其中,像素电极层采用ITO电极。
为解决上述技术问题,本发明还提供一种液晶显示面板,其包括像素结构,像素结构包括像素电极层和绝缘层,像素电极层铺设在绝缘层上方。其中,绝缘层包括图案化的第一绝缘区和无图案化的第二绝缘区。像素电极层包括铺设在第一绝缘区上方的无图案化的第一像素电极区,以及铺设在第二绝缘区上方的图案化的第二像素电极区。
其中,第二绝缘区围绕第一绝缘区,第二像素电极区围绕第一像素电极区。
其中,第一绝缘区的边界为矩形、棱形、椭圆形或不规则几何图形。
其中,第一绝缘区围绕第二绝缘区,第一像素电极区围绕第二像素电极区。
其中,第二绝缘区的边界为矩形、棱形、椭圆形或不规则几何图形。
其中,图案化的第一绝缘区为沟槽结构,图案化的第二像素电极区为条状结构。
其中,沟槽结构包括凹槽和凸起,其中所有凹槽的宽度相同,所有凸起的宽度相同。
其中,凹槽的深度小于绝缘层的厚度。
其中,像素电极层采用ITO电极。
本发明的有益效果是:区别于现有技术,本发明的像素结构包括像素电极层和绝缘层,电极层铺设在绝缘层上方;绝缘层包括图案化的第一绝缘区和无图案化的第二绝缘区,对应的在绝缘层上方所铺设的像素电极层也包括无图案化的第一电极区和图案化的第二电极区。其中,第一像素电极区的电极沿着第一绝缘区的图案进行铺设,且第一像素电极区是未经刻蚀的没有图案的电极层,即:第一像素电极区的电极不存在间隔,因此第一像素电极区对应的液晶分子具有较强的有效电场,相应的具有较高的光学穿透率;另一方面,第二像素电极区的电极在无图案的第二绝缘区进行铺设,因此图案化的第二像素电极区中的电极具有间隔,可以产生较强的侧向电场,以控制液晶的配向,形成均匀稳定的液晶配向。本发明中的像素结构将两者组合使用,能够使得整个像素结构的液晶区域同时具有较高的光学穿透率以及均匀稳定的液晶配向。
【附图说明】
图1是本发明像素结构一实施例的结构示意图;
图2是图1中A-A方向和B-B方向的剖视图;
图3是处于内圈的绝缘区边界为棱形的像素结构示意图;
图4是处于内圈的绝缘区边界为椭圆形的像素结构示意图;
图5是本发明像素结构中第一绝缘区或第二像素电极区的一种图案;
图6是本发明像素结构中第一绝缘区或第二像素电极区的另一种图案;
图7是图1所示的像素结构以及传统像素结构在不同电压下光学穿透率的示意图;
图8是图1所示的像素结构以及传统像素结构在光学显微镜下的图片;
图9是本发明液晶显示面板一实施例的结构示意图;
图10是图9所示液晶显示面板中像素结构的示意图。
【具体实施方式】
请参阅图1和图2,图1是本发明像素结构一实施例的结构示意图,图2是图1中A-A方向和B-B方向的剖视图。本实施例提供了一种像素结构100,包括绝缘层12和像素电极层14,其中,绝缘层12包括图案化的第一绝缘区120和无图案化的第二绝缘区122;像素电极层14包括无图案化的第一像素电极区140和图案化的第二像素电极区142;并且第一像素电极区140铺设在第一绝缘区120上,第二像素电极区142铺设在第二绝缘区122上。
本实施例中的像素结构100进一步包括公共电极层11和液晶层13,液晶层13设置在公共电极层11以及像素电极层14之间。像素结构100所对应的液晶显示面板为VA
Mode,应理解,像素结构100也可对应其他模式的显示面板。像素结构100中液晶层13为垂直配向,液晶显示面板为常黑模式。当公共电极层11与像素电极层14之间出现电势差、产生电场时,液晶分子在电场的作用下发生转动,使得光线能够通过液晶层13。由于电势差的不同,液晶分子的转动角度不同,液晶层13的光学穿透率也不同,因此可以通过电压来控制像素点灰阶,而像素点中RGB子像素的灰阶变化即能实现液晶显示中色彩的变化。
在本实施例中,绝缘层12的第一绝缘区120通过光刻工艺或压印工艺以实现图案化,然后将电极通过化学沉积、涂布或压片等工艺直接铺设在第一绝缘区120上以形成像素电极层14的第一像素电极区140。
对于像素电极层14的第二像素电极区142,其电极通过光刻工艺实现图案化,具体而言,首先也是通过化学沉积、涂布或压片等工艺在第二绝缘区122上形成一层电极,然后对此电极层进行激光刻蚀,以形成一定的图案,即实现了在无图案化的第二绝缘区122上形成图案化的第二像素电极区142。
由于第一像素电极区140的电极为沿着第一绝缘区120的图案连续的铺设的,第一像素电极区140并没有镂空区域,连续铺设的电极会产生垂直于电极层的有效电场,同时平行于电极层的侧向电场也相应的较弱,较强的有效电场使得第一像素电极区140相对的液晶层具有较高的光学穿透率,同时较弱的侧向电场也使得相应的液晶分子容易受到边缘场效应的影响,而偏离正常方向发生运动,继而排列方向发生不连续的变化,容易产生向错线。其中所谓边缘场效应即相邻的两个像素点之间,不同控制电压的相互影响,使得相邻像素点的相邻电极之间产生水平电场,继而影响各个像素点中液晶分子的运动。
而第二像素电极区142具有图案化的电极,镂空图案处的有效电场较弱,因此相应的光学穿透率也较低,而由于镂空图案的存在,在边界处的液晶分子发生扭转,也会导致光学穿透率降低,同时此边界处容易形成较强的侧向电场,利于液晶分子的运动,以形成均匀稳定的液晶配向,而边缘场效应相较于此侧向电场,对液晶分子的运动影响较小,因此第二像素电极区142相对的液晶层光学穿透率较低,相应的液晶分子不易偏离正常方向,不容易产生向错线。
而在本实施例中,像素结构100同时具有第一像素电极区14和第二像素电极区142,两个电极区与公共电极层11所形成的电场均能对整个液晶层13的液晶分子产生作用,使得液晶分子的运动不易被边缘场效应影响,因此对于整个像素结构100来说,能够同时具有较好的光学穿透率和较为均匀稳定的液晶配向。
基于上述原理,第一绝缘区120及第二绝缘区122的位置关系有很多种可能,可以使第一绝缘区120围绕第二绝缘区122设置,此时第二绝缘区122的边界可以为矩形、棱形、椭圆形或不规则几何图形;也可使第二绝缘区122围绕第一绝缘区120设置,此时第一绝缘区120的边界可以为矩形、棱形、椭圆形或不规则几何图形。
然而为了使液晶显示面板有较好的显示效果,需要使像素结构100中电场分布对称,以对液晶层13的影响中心对称。像素结构100中第一绝缘区120及第二绝缘区122均为中心对称结构。因此,一般将一个绝缘区围绕另一个绝缘区设置,且在内圈的绝缘区边界为矩形、棱形、椭圆形等规则图形。如图3和图4所示,图3是处于内圈的绝缘区边界为棱形的像素结构示意图,图4是处于内圈的绝缘区边界为椭圆形的像素结构示意图。
当将如图2所示的第二绝缘区122及图案化的第二像素电极区142作为像素结构100的外围时,第二像素电极区142能够产生较强的侧向电场,使得处于外围的液晶分子受到边缘场效应的影响较小,不易产生向错线;并且像素结构100内圈第一像素电极区140能够产生较强的有效电场,使得内圈的光学穿透率较高,像素结构100整体效果较好。如果提高光学穿透率及避免向错线同等重要,则第一绝缘区120与第二绝缘区122的面积比为1:1,相应的第一像素电极区140与第二像素电极区142的面积比也为1:1;若通过改善光源系统,已经能够使人们察觉不到暗纹,即避免向错线更为重要,此时第一绝缘区120与第二绝缘区122的面积比为1:2,相应的第一像素电极区140与第二像素电极区142的面积比也为1:2;同理若对于整个液晶显示面板来说,光学穿透率更为重要,则将第一绝缘区120与第二绝缘区122的面积比设置为2:1,相应的第一像素电极区140与第二像素电极区142的面积比也为2:1。以上所述的面积比也可选择1:3、2:3、3:5等比例值。
当将图案化的第一绝缘区120及第一像素电极区140作为像素结构100的外围时,第一像素电极区140产生的侧向电场较弱,则处于外围的液晶分子受到边缘场效应的影响较大;而处于内圈的第二像素电极区142的侧向电场较强,即处于中心位置的液晶分子受到边缘场效应的影响较小。当第一像素电极区140的面积较小时,相应受到边缘场效应影响的液晶分子也会较少,相对来说也不容易形成向错线。因此第一绝缘区和第二绝缘区的面积比一般选择1:1或1:2。以上所述的面积比也可选择1:3、2:3、3:5等比例值。
在本实施例中,将第二绝缘区122及图案化的第二像素电极区142作为像素结构100的外围,并且内圈的第一绝缘区120边界为矩形,且第一绝缘区120与第二绝缘区122的面积比为1:1。
为了实现液晶显示面板广视角的效果,在本实施例中,第一绝缘区120的图案和第二像素电极区142的图案均是以同一点为中心朝四个方向发射的图案。当然若是考虑到其他目的,也可选择其他图案,如图5和图6,图5是本发明像素结构中第一绝缘区或第二像素电极区的一种图案,图6是本发明像素结构中第一绝缘区或第二像素电极区的另一种图案,由此可知上述两者的图案还可选择对称的朝两个方向发射的图案,或者多个规则排布的六边形图案,在此基础上,还可以想到朝三个或多个方向发射的图案、多个规则或不规则排布的三角形或正方形图案等等。
请再一并参阅图2所示,具体来说,图案化的第一绝缘区120为沟槽结构,具有间隔排列的凹槽和凸起,为了便于工艺制造,一般所有凹槽的宽度均为a,所有凸起的宽度也均为b,其中a可以等于或不等于b;且为了避免凹槽变为镂空为无法承载第一像素电极区140的电极,在制作第一绝缘区120的图案时,需要保证凹槽的深度h不超过绝缘层的厚度。而图案化的第二像素电极区142为条状结构,也是基于工艺制造的考虑,使所有条状电极的宽度均设置为c,两条状电极间隔宽度设置为d,其中c可以等于或不等于d。
对于绝缘层12,在实际应用中一般为玻璃基板,其主要厚度为0.7mm或0.5mm,本实施例中选用0.5mm。因此第一绝缘区120的凹槽深度一般设置为0.3mm,若制造能够实现较高的加工精度要求,还可以将凹槽深度设置为0.4mm,对应的第一像素电极区140凹槽和凸起上的电极则能够产生相对较大的侧向电场,可在一定程度上避免向错线。为了保证整个像素结构100的一致性,第一像素电极区140及第二像素电极区142的电极选择相同厚度,且凸起宽度b与条状电极宽度c均为7um,凹槽宽度a与两条装电极间隔宽度d均为3um。当然上述宽度值也可设置为不同,或其他数值。
为了提供光透率,本实施例中像素电极层14及公共电极层11的电极均采用ITO电极,当然也可选用金属化合物等其他电极材料。
对本实施例中的像素结构100以及传统像素结构进行实验,获得两者在光学显微镜下的图片以及在不同电压下的光学穿透率的曲线图,请参阅图7及图8,图7是图1所示的像素结构以及传统像素结构在不同电压下光学穿透率的示意图,图8是图1所示的像素结构以及传统像素结构在光学显微镜下的图片。图7中通过亮度来表示光学穿透率,可以看出相较于传统像素结构,像素结构100的光学穿透率较大,从图8中可看出传统像素结构可能出现明显的暗纹或向错线,而像素结构100则没有明显暗纹且避免了向错线,即同时具有较高的光学穿透率和均匀稳定的液晶配向。
区别于现有技术,本实施例像素结构中包括像素电极层及绝缘层,且绝缘层包括图案化的第一绝缘区和无图案化的第二绝缘区,对应的在绝缘层上方所铺设的像素电极层也包括无图案化的第一电极区和图案化的第二电极区。其中,第一像素电极区的电极沿着第一绝缘区的图案进行铺设,电极不存在间隔,因此第一像素电极区对应的液晶分子具有较强的有效电场,相应的具有较高的光学穿透率;第二像素电极区的电极在无图案的第二绝缘区进行铺设,因此图案化的第二像素电极区中的电极具有间隔,可以产生较强的侧向电场,以控制液晶的配向,形成均匀稳定的液晶配向。本发明中的像素结构将两者组合使用,能够使得整个像素结构的液晶区域同时具有较高的光学穿透率以及均匀稳定的液晶配向。
请参阅图9,图9是本发明液晶显示面板一实施例的结构示意图。本实施例提供一种液晶显示面板900,其中从下往上依次设置光源901、下偏光板902、像素结构903以及上偏光板904。液晶显示面板900中还包括驱动装置905,用于为像素结构903提供所需的驱动控制信号。
其中,像素结构903包括绝缘层9031、像素电极层9032、液晶层9033以及公共电极层9034,具体请参阅图10,图10是图9所示液晶显示面板中像素结构的示意图。由于像素电极层铺设在绝缘层上,因此在图10中以像素电极层9032为例进行标识。其中,三原色RGB的子像素结构依次排列,每个子像素结构具有处于内圈的第一像素电极区9035以及处于外圈的第二像素电极区9036,图10中子像素结构类似于图1中的像素结构100,能够实现较好的光学穿透率和较为均匀稳定的液晶配向,具体的结构请参阅前文所述,在此不再赘述。
区别于现有技术,本实施例液晶显示面板中采用的像素结构,能够实现较高的光学穿透率以及均匀稳定的液晶配向,因此本实施例中的液晶面板也能够具备较好的显示效果。
以上所述仅为本发明的实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (20)
- 一种像素结构,其中,所述像素结构包括:像素电极层和绝缘层;所述像素电极层铺设在所述绝缘层上方;其中,所述绝缘层包括图案化的第一绝缘区和无图案化的第二绝缘区;所述像素电极层包括铺设在所述第一绝缘区上方的无图案化的第一像素电极区,以及铺设在所述第二绝缘区上方的图案化的第二像素电极区;所述第二绝缘区围绕所述第一绝缘区,所述第二像素电极区围绕所述第一像素电极区;所述图案化的第一绝缘区为沟槽结构,所述图案化的第二像素电极区为条状结构。
- 根据权利要求1所述的像素结构,其中,所述第一绝缘区的边界为矩形、棱形、椭圆形或不规则几何图形。
- 一种像素结构,其中,所述像素结构包括:像素电极层和绝缘层;所述像素电极层铺设在所述绝缘层上方;其中,所述绝缘层包括图案化的第一绝缘区和无图案化的第二绝缘区;所述像素电极层包括铺设在所述第一绝缘区上方的无图案化的第一像素电极区,以及铺设在所述第二绝缘区上方的图案化的第二像素电极区。
- 根据权利要求3所述的像素结构,其中,所述第二绝缘区围绕所述第一绝缘区,所述第二像素电极区围绕所述第一像素电极区。
- 根据权利要求4所述的像素结构,其中,所述第一绝缘区的边界为矩形、棱形、椭圆形或不规则几何图形。
- 根据权利要求3所述的像素结构,其中,所述第一绝缘区围绕所述第二绝缘区,所述第一像素电极区围绕所述第二像素电极区。
- 根据权利要求6所述的像素结构,其中,所述第二绝缘区的边界为矩形、棱形、椭圆形或不规则几何图形。
- 根据权利要求3所述的像素结构,其中,所述图案化的第一绝缘区为沟槽结构,所述图案化的第二像素电极区为条状结构。
- 根据权利要求8所述的像素结构,其中,所述沟槽结构包括凹槽和凸起,其中所有所述凹槽的宽度相同,所有所述凸起的宽度相同。
- 根据权利要求9所述的像素结构,其中,所述凹槽的深度小于所述绝缘层的厚度。
- 根据权利要求3所述的像素结构,其中,所述像素电极层采用ITO电极。
- 一种液晶显示面板,其中,所述液晶显示面板包括像素结构,所述像素结构包括:像素电极层和绝缘层;所述像素电极层铺设在所述绝缘层上方;其中,所述绝缘层包括图案化的第一绝缘区和无图案化的第二绝缘区;所述像素电极层包括铺设在所述第一绝缘区上方的无图案化的第一像素电极区,以及铺设在所述第二绝缘区上方的图案化的第二像素电极区。
- 根据权利要求12所述的液晶显示面板,其中,所述第二绝缘区围绕所述第一绝缘区,所述第二像素电极区围绕所述第一像素电极区。
- 根据权利要求13所述的液晶显示面板,其中,所述第一绝缘区的边界为矩形、棱形、椭圆形或不规则几何图形。
- 根据权利要求12所述的液晶显示面板,其中,所述第一绝缘区围绕所述第二绝缘区,所述第一像素电极区围绕所述第二像素电极区。
- 根据权利要求15所述的液晶显示面板,其中,所述第一绝缘区的边界为矩形、棱形、椭圆形或不规则几何图形。
- 根据权利要求12所述的液晶显示面板,其中,所述图案化的第一绝缘区为沟槽结构,所述图案化的第二像素电极区为条状结构。
- 根据权利要求17所述的液晶显示面板,其中,所述沟槽结构包括凹槽和凸起,其中所有所述凹槽的宽度相同,所有所述凸起的宽度相同。
- 根据权利要求18所述的液晶显示面板,其中,所述凹槽的深度小于所述绝缘层的厚度。
- 根据权利要求12所述的液晶显示面板,其中,所述像素电极层采用ITO电极。
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| TWI576798B (zh) | 2015-06-22 | 2017-04-01 | 宏齊科技股份有限公司 | 顯示面板與應用其之複合式顯示面板 |
| CN104914635B (zh) * | 2015-06-25 | 2018-05-01 | 深圳市华星光电技术有限公司 | 像素电极及液晶显示面板 |
| CN105093718A (zh) | 2015-07-16 | 2015-11-25 | 深圳市华星光电技术有限公司 | 像素结构及液晶显示面板 |
| TWI564616B (zh) * | 2015-08-24 | 2017-01-01 | 友達光電股份有限公司 | 顯示面板 |
| CN105137688B (zh) * | 2015-10-10 | 2016-12-07 | 重庆京东方光电科技有限公司 | 一种阵列基板、显示面板及其驱动方法 |
| KR102593756B1 (ko) * | 2016-10-12 | 2023-10-25 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
| KR102754264B1 (ko) * | 2016-11-07 | 2025-01-13 | 삼성디스플레이 주식회사 | 지문 센서, 표시 장치 및 표시 장치의 제조 방법 |
| CN114355679B (zh) * | 2021-12-31 | 2022-09-27 | 惠科股份有限公司 | 阵列基板、显示面板及阵列基板的制备方法 |
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