WO2016101978A1 - Apparatus for inspecting a substrate, method for inspecting a substrate, large area substrate inspection apparatus and method of operating thereof - Google Patents

Apparatus for inspecting a substrate, method for inspecting a substrate, large area substrate inspection apparatus and method of operating thereof Download PDF

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Publication number
WO2016101978A1
WO2016101978A1 PCT/EP2014/079018 EP2014079018W WO2016101978A1 WO 2016101978 A1 WO2016101978 A1 WO 2016101978A1 EP 2014079018 W EP2014079018 W EP 2014079018W WO 2016101978 A1 WO2016101978 A1 WO 2016101978A1
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WO
WIPO (PCT)
Prior art keywords
substrate
charged particle
particle beam
vacuum chamber
imaging
Prior art date
Application number
PCT/EP2014/079018
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English (en)
French (fr)
Inventor
Bernhard Mueller
Ludwig Ledl
Axel Wenzel
Lidia PARISOLI
Matthias Brunner
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Applied Materials, Inc.
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Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to JP2017528470A priority Critical patent/JP6604704B2/ja
Priority to KR1020177020564A priority patent/KR20170101265A/ko
Priority to CN202211703467.3A priority patent/CN115901831A/zh
Priority to CN201480084213.5A priority patent/CN107110799A/zh
Priority to PCT/EP2014/079018 priority patent/WO2016101978A1/en
Priority to TW104139058A priority patent/TWI673748B/zh
Publication of WO2016101978A1 publication Critical patent/WO2016101978A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
    • G01N23/083—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/145—Combinations of electrostatic and magnetic lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513—Liquid crystal panels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95638—Inspecting patterns on the surface of objects for PCB's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/61—Specific applications or type of materials thin films, coatings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/203—Measuring back scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G01N23/2252—Measuring emitted X-rays, e.g. electron probe microanalysis [EPMA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0216—Means for avoiding or correcting vibration effects

Definitions

  • the present disclosure relates to an apparatus and a method for inspecting a substrate. More particularly, embodiments described herein relate to an apparatus and a method for inspecting substrates for display manufacturing, still more particularly a large area substrate for display manufacturing.
  • LTPS Low Temperature Poly Silicon
  • the inspection of the substrate can, for example, be carried out by an optical system.
  • the LTPS grain structure, grain sizes and topography of the grains at the grain edges are particularly difficult to review using optical systems, since the grain size may be below the optical resolution, making the grains invisible for the optical system.
  • An inspection of small portions of substrates has also been carried out using charged particle beam devices, combined with surface etching.
  • the surface etching may enhance the contrast of e.g. the grain boundaries but involves breaking the glass substrate, so that small pieces of the substrate are inspected instead of the substrate as a whole. Accordingly, it is impossible to continue processing the substrate, e.g. to check the impact of the grain structure on the final product, after inspection of the substrate.
  • an apparatus for inspecting a large area substrate for display manufacturing includes a vacuum chamber; a substrate support arranged in the vacuum chamber, wherein the substrate support is configured for supporting the large area substrate for display manufacturing; and a first imaging charged particle beam microscope configured for generating a charged particle beam for inspecting a substrate supported by the substrate support, wherein the first imaging charged particle beam microscope includes a retarding field lens component of an objective lens.
  • an apparatus for inspecting a substrate particularly a large area substrate for display manufacturing
  • the apparatus includes a vacuum chamber; a substrate support arranged in the vacuum chamber, wherein the substrate support provides a substrate receiving area has a first receiving area dimension along a first direction; and a first imaging charged particle beam microscope and a second imaging charged particle beam microscope having a distance along the first direction of 30% to 70% of the first receiving area dimension.
  • a method for inspecting a large area substrate for display manufacturing includes providing the large area substrate in a vacuum chamber; and generating a first charged particle beam with a first imaging charged particle beam microscope, wherein the first charged particle beam impinges on the substrate with a landing energy of 2keV or below.
  • FIG. 1 shows a side view of an apparatus for inspecting a substrate, according to embodiments described herein;
  • FIGS. 2 and 3 show a top view of an apparatus for inspecting a substrate, according to embodiments described herein;
  • FIG. 4 shows a side view of an apparatus for inspecting a substrate according to embodiments described herein, wherein the apparatus includes components for reducing vibrations;
  • FIG. 5A shows a side view of an imaging charged particle beam according to embodiments described herein;
  • FIGS. 5B and 5C show schematic views of tilting a charged particle beam in an imaging charged particle beam according to embodiments described herein;
  • FIGS. 6a-b illustrate a method of inspecting a substrate according to embodiments described herein;
  • FIGS. 7a-d illustrate different arrangements of imaging charged particle beams in a vacuum chamber, according to embodiments described herein;
  • FIGS. 8a-c illustrate a method of inspecting a substrate according to embodiments described herein;
  • FIGS. 9a-c illustrate a method for inspecting a substrate using an apparatus including a single imaging charged particle beam microscope, according to embodiments described herein;
  • FIG. 10 shows a flow chart illustrating a method as described with respect to FIGS. 6a and 6b.
  • substrate as used herein embraces both inflexible substrates, e.g., a glass substrate, or a glass plate, and flexible substrates, such as a web or a foil.
  • the substrate may be a coated substrate, wherein one or more thin layers of materials are coated or deposited on the substrate, for example by a physical vapor deposition (PVD) process or a chemical vapor deposition process (CVD).
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • embodiments described herein relate to large area substrates, in particular large area substrates for the display market.
  • large area substrates or respective substrate supports may have a size of at least 1.375 m 2 .
  • the size may be from about 1.375 m (1100 mm x 1250 mm- Gen 5) to about 9 m 2 , more specifically from about 2 m 2 to about 9 m 2 or even up to 12 m 2 .
  • the substrates or substrate receiving areas, for which the structures, apparatuses, and methods according to embodiments described herein are provided, can be large area substrates as described herein.
  • a large area substrate or carrier can be GEN 5, which corresponds to about 1.375 m 2 substrates (1.1 m x 1.25 m), GEN 7.5, which corresponds to about 4.39 m 2 substrates (1.95 m x 2.25 m), GEN 8.5, which corresponds to about 5.7m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 9 m 2 substrates (2.88 m x 3130 m). Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented..
  • FIG. 1 shows a side view of an apparatus for inspecting a substrate, according to embodiments described herein.
  • the apparatus 100 includes a vacuum chamber 120.
  • the apparatus 100 further includes a substrate support 110 on which a substrate 160 may be supported.
  • the apparatus 100 includes a first imaging charged particle beam microscope 130.
  • the apparatus may include a second imaging charged particle beam microscope 140.
  • the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 are arranged above the substrate support 110.
  • the substrate support 110 extends along the x-direction 150.
  • the x-direction 150 is a left-right direction.
  • a substrate 160 is disposed on the substrate support 110.
  • the substrate support 110 is movable along the x-direction 150 to displace the substrate 160 in the vacuum chamber 120 relative to the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140.
  • an area of the substrate 160 can be positioned below the first imaging charged particle beam microscope 130 or below the second imaging charged particle beam microscope 140 for inspection.
  • the area may contain a test object, such as an area to be tested having e.g. a grain or defect contained in or on a coated layer on the substrate.
  • the substrate support 110 may also be movable along a y-direction (not shown) so that the substrate 160 can be moved along the y-direction, as discussed below. By suitably displacing the substrate support 110 holding the substrate 160 within the vacuum chamber 120, the entire extent of the substrate 160 may be inspected inside the vacuum chamber 120.
  • the first imaging charged particle beam microscope 130 is distanced from the second imaging charged particle beam microscope 140 along the x-direction 150 by a distance 135.
  • the distance 135 is a distance between a center of the first imaging charged particle beam microscope 130 and a center of the second imaging charged particle beam microscope 140.
  • the distance 135 is a distance, along the x-direction 150, between a first optical axis 131 defined by the first imaging charged particle beam microscope and a second optical axis 141 defined by the second imaging charged particle beam microscope 140.
  • the first optical axis 131 and the second optical axis 141 extend along a z-direction 151. In the drawing plane of FIG.
  • the z-direction 151 is an up-down direction orthogonal to the x-direction 150.
  • the first optical axis 131 may for example be defined by the objective lens of the first imaging charged particle beam microscope 130.
  • the second optical axis 141 may for example be defined by the objective lens of the second imaging charged particle beam microscope 140.
  • the distance 135 may also be defined between the center of the first imaging charged particle beam microscope 130 and the center of the second imaging charged particle beam microscope 140.
  • the center of an imaging charged particle beam microscope may substantially correspond to the optical axis of the imaging charged particle beam microscope.
  • the vacuum chamber 120 has an inner width 121 along the x-direction 150.
  • the inner width 121 may be a distance obtained when traversing the vacuum chamber 120 along the x-direction from left-hand wall 123 of the vacuum chamber 120 to right-hand wall 122 of the vacuum chamber 120.
  • An aspect of the disclosure relates to the dimensions of the apparatus 100 with respect to the e.g. x-direction 150.
  • the distance 135 along the x-direction 150 between the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 may be at least 30 cm, such as at least 40 cm.
  • the inner width 121 of the vacuum chamber 120 may lie in the range from 250% to 450% of the distance 135 between the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140.
  • Embodiments described herein thus provide an apparatus for inspecting a substrate, in particular a large area substrate, in a vacuum chamber using two imaging charged particle beam microscopes distanced from each other.
  • the substrate is processed as a whole in the vacuum chamber.
  • embodiments described herein do not require breaking the substrate or etching the surface of the substrate. Accordingly, a high- resolution image of defects and a good grain boundary contrast are provided, particularly with an inspection system, for which large area substrates can be measured in-line.
  • a defect may be located on a right-hand portion of the substrate 160, e.g. on the right hand side of the second optical axis 141.
  • the substrate 160 may be displaced in the vacuum chamber 120 to position the defect below the second imaging charged particle beam microscope 140, so that the defect can be inspected by the second imaging charged particle beam microscope 140.
  • the substrate would be displaced towards the left over a greater distance along the x-direction 150 to position the defect for inspection by the first imaging charged particle beam microscope 130.
  • the vacuum chamber 120 shown in FIG. 1 would however be too narrow along the x-direction for positioning the defect below the first imaging charged particle beam microscope 130. Accordingly, a vacuum chamber having a larger inner width along the x-direction would be required to allow for an inspection of arbitrarily located defects on the substrate 160.
  • An advantage of having a vacuum chamber with reduced dimensions is that one or more vibrations of the vacuum chamber may be reduced accordingly, since the level of vibration increases as a function of the size of the vacuum chamber. Accordingly, the vibration amplitude of the substrate may be advantageously reduced as well.
  • the vibration amplitude of the substrate may be 10 nm or below, for example 5 nm or below.
  • Some embodiments described herein provide one imaging charged particle beam microscope in or at the vacuum chamber.
  • the apparatus 100 shown in FIGS. 9a-c provides a single imaging charged particle beam microscope 900.
  • imaging charged particle beam microscopes offer a higher resolution.
  • an image of a portion of the large area substrate can be generated, wherein e-beam testers with a large field of view commonly do not generate an image of a portion of the large area substrate.
  • An imaging charged particle beam microscope may be adapted for generating a low-energy charged particle beam having a landing energy of 2 keV or below, particularly of 1 keV or below, such as 100 eV to 800 eV.
  • a landing energy of 2 keV or below particularly of 1 keV or below, such as 100 eV to 800 eV.
  • low energy beams do not penetrate deeply in the substrate and may therefore provide superior information about thin layers, e.g. LTPS layers, deposited on the substrate.
  • Imaging charged particle beam microscopes providing a high resolution inspection of the substrate at low landing energies, allow for a non-destructive inspection of defects on the substrate. Accordingly, embodiments described herein allow testing the influence of the defects on the functionality of the substrate. For example, after inspecting a defect on the substrate, e.g. a substrate for display manufacturing, embodiments described herein allow testing whether the defect destroys the functionality of the display. That is, it can be evaluated whether or not the defect is a "killer defect" or whether the display is functional even in the presence of the defect. Accordingly, a kill-ratio analysis of the defects may be carried out since the substrates can be further processed after the non-destructive testing with low energies.
  • some embodiments having a first imaging charged particle beam microscope and a second imaging charged particle beam microscope provide an increased throughput compared to embodiments having a single imaging charged particle beam microscope, since the substrate may be inspected in parallel by the first imaging charged particle beam microscope and by the second imaging charged particle beam microscope.
  • a first defect on the substrate may be inspected by the first imaging charged particle beam microscope and a second defect the imaging charged particle beam microscope may be inspected by the second imaging charged particle beam microscope, wherein the inspection of the first defect and the second defect are carried out in parallel.
  • an imaging charged particle beam microscope can be a scanning electron microscope (SEM), wherein an image is provided with a very high resolution, e.g. of 15 nm or below or even lower.
  • SEM scanning electron microscope
  • An imaging charged particle beam microscope may have a working distance in the range from 0.5 to 5 mm.
  • the distance from a lower edge of the column of the imaging charged particle beam microscope to the substrate or to the substrate support may be in the range from 6 to 10 cm.
  • the field of view of an imaging charged particle beam microscope may be below 1 mm.
  • An imaging charged particle beam microscope may be adapted for generating low-energy charged particle beams, e.g. electron beams, having a landing energy of 2keV or below, more particularly IkeV or below.
  • devices for pixel testing with e-beams may have a field of view above 10 cm and may be adapted for generating charged particle beams having landing energies of about lOkeV. Further, devices for pixel testing with e-beams may not be configured for imaging of the substrate, whereas an imaging charged particle beam microscope, as described herein, provides an image of the area of the substrate being inspected.
  • a reduced level of vibrations of the vacuum chamber facilitates the usage of imaging charged particle beam microscopes for inspecting the substrate.
  • the vibration amplitude of the vacuum chamber may be 10 nm or below, for example 5 nm or below, according to embodiments described herein, charged particle beam devices having a high resolution, e.g. imaging charged particle beam microscopes having a resolution of 5 nm or below, can be used for inspecting the substrate.
  • Embodiments described herein providing a reduced level of vibration of the substrate and the imaging charged particle beam microscope (e.g. an SEM) relative to each other, e.g. to facilitate inspecting the substrate using high-resolution charged particle beam devices. Accordingly, an improved apparatus for testing and an improved imaging of the substrate is provided.
  • Embodiments described herein may e.g. be used for critical dimension (CD) analysis or defect review (DR).
  • Embodiments described herein provide various features, aspects, and details, which enable utilizing high resolution imaging of large area substrates, for example by providing low-voltage high resolution e- beam testing within a vacuum chamber.
  • FIGS. 8a-c illustrate a method of inspecting a substrate 160, according to embodiments described herein.
  • FIGS. 8a-c which provides a top view of the apparatus 100
  • the x-direction 150 as well as a y-direction 152 are indicated.
  • the x-direction 150 is a left/right direction
  • the y-direction 152 is an up/down direction.
  • the substrate 160 has a substrate width 810 along the x- direction 150.
  • the distance 135 along the x-direction 150 between the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 may lie in the range from 30% to 70% of the substrate width 810. In the exemplary apparatus shown in FIGS. 8a-c, the distance 135 is approximately 50% of the substrate width 810.
  • the inner width 121 of the vacuum chamber 120 may lie in the range from 130% to 180% of the substrate width 810. In the exemplary embodiment illustrated in FIGS. 8a-c, the inner width 121 is approximately 150% of the substrate width 810.
  • the substrate 160 shown in Figs 8a-c can be considered to have two regions, namely a first region 820 and a second region 830, wherein the first region 820 lies on the left of the second region 830.
  • the first region 820 and the second region 830 are rectangles having equal sizes.
  • the first region 820 has a first width 821 along the x-direction and the second region 830 has a second width 831 along the x-direction 150, wherein the first width 821 is equal to the second width 831.
  • the substrate width 810 is twice as large as the first width 821 and thus also twice as large as the second width 831.
  • the first width 821, the second width 831 and the distance 135 between the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 can be equally large.
  • a test object e.g. an area to be tested having a defect or a grain structure, lying in the first region 820 of the substrate 160
  • a test object e.g. a further area to be tested having a defect or grain structure, lying in the second region 830
  • the second imaging charged particle beam microscope 140 may be inspected by the second imaging charged particle beam microscope 140.
  • the range within which the substrate 160 is moved along the x-direction 150 is e.g. about 150 % of the substrate width 810. Accordingly, the inspection of test objects at arbitrary locations on the substrate 160 may be carried out within the vacuum chamber 120 shown in FIGS. 8a-c, the vacuum chamber 120 having an inner width 121 of approximately 150% of the substrate width 810.
  • FIGS. 8a-c exemplarily show a first defect 822 and a second defect 832 on the substrate 160, wherein the first defect 822 lies in the first region 820 and the second defect 832 lies in the second region 830.
  • the first defect 822 lies near an outer left edge of the substrate 160 and the second defect 832 lies near an outer right edge of the substrate 160.
  • the first defect 822 lying in the first region 820, is inspected by the first imaging charged particle beam microscope 130. Accordingly, the substrate 160 is displaced in the vacuum chamber 120 to position the first defect 822 below the first imaging charged particle beam microscope 130.
  • FIG. 8b shows the displaced substrate 160, wherein the first defect 822 is positioned directly below the first imaging charged particle beam microscope 130.
  • the first defect 822 may then be inspected by the first imaging charged particle beam microscope 130.
  • the inspection of the first defect 822 may include directing a first charged particle beam generated by the first imaging charged particle beam microscope 130 onto the substrate 160, as described below (cf. e.g. FIG. 6a).
  • the apparatus for inspection may inspect the second defect 832.
  • the second defect 832 lying in the second region 830, is inspected by the second imaging charged particle beam microscope 140. Accordingly, starting from the configuration shown in FIG. 8b, the substrate 160 is displaced to position the second defect 832 below the second imaging charged particle beam microscope 140.
  • FIG. 8c shows the displaced substrate 160, wherein the second defect 832 is positioned below the second imaging charged particle beam microscope 140. Accordingly, the second defect 832 may be inspected by the second imaging charged particle beam microscope 140.
  • the inspection of the second defect 832 may include directing a second charged particle beam generated by the second imaging charged particle beam microscope 140 onto the substrate 160, as described below (cf. e.g. FIG. 6b).
  • the apparatus for inspecting can be provided with a file wherein the coordinates of the defects are provided.
  • the coordinate of defects may results from a previous large area substrate inspection, wherein pixels are tested with an e-beam, yet without image generation.
  • the know defects can be provided in a map of the substrate, i.e. coordinates of the substrate are known for operating a system for large area substrate inspection with e.g. an SEM.
  • the apparatus for inspecting can then image the areas including the defects with a first imaging charged particle beam microscope, e.g. a first SEM, or a second imaging charged particle beam microscope, e.g.
  • the apparatus for inspecting can be provided with a coordinate map for LTPS process inspection. For example, one or more predetermined coordinates can be provided and additionally or alternatively one or more random coordinates can be provided.
  • the LTPS grain structure is imaged around the coordinates (predetermined and/or random) and the LTPS process can be characterized by one or more parameters resulting from the imaging with the imaging charged particle beam microscope. Further, additionally or alternatively the uniformity of one or more parameters can be evaluated by a comparison of different coordinates, which may be provided in a map.
  • FIGS. 9a-c illustrate an embodiment wherein the same substrate 160 as shown in FIGS. 8a-c is inspected using an embodiment of apparatus 100 including a single imaging charged particle beam microscope 900.
  • the distance along the x-direction 150 over which the substrate 160 is moved for positioning the first defect 822 and the second defect 832 below the imaging charged particle beam microscope 900 is increased compared to FIGS. 8a-c. Accordingly, the inner width 121 ' of the vacuum chamber 120 shown in FIGS. 9a-c is larger than the inner width 121 of the vacuum chamber 120 shown in FIGS. 8a-c. In particular, the inner width 121 ' of the vacuum chamber 120 shown in FIGS. 9a-c is at least approximately 200% of the substrate width 810, as provided to allow for an inspection of arbitrarily localized defects on the substrate 160 using the single imaging charged particle beam microscope 900.
  • an apparatus for inspecting a substrate particularly a substrate for display manufacturing, includes a vacuum chamber, a substrate support arranged in the vacuum chamber, a first imaging charged particle beam microscope and a second imaging charged particle beam microscope.
  • the apparatus may be an inline apparatus or part of an inline substrate processing system.
  • An inline processing system may include one or more further apparatuses for processing the substrate, wherein the substrate may be transported through the inline processing system from one apparatus to a next apparatus.
  • the inline processing system may include a further chamber disposed, with respect to a substrate transport path of the inline processing system, downstream of the vacuum chamber described herein.
  • the substrate may be transported, e.g. by a displacement unit as described herein, from the vacuum chamber to the further chamber for further processing of the substrate.
  • the substrate is processed and transported as a whole, i.e. without breaking the substrate.
  • a further chamber may be selected from the group consisting of: a processing chamber, a further test chamber, a deposition chamber, and a display assembling chamber.
  • the apparatus for inspecting large area substrates for display manufacturing can be an in-line apparatus, i.e. the apparatus, potentially including a load lock for loading and unloading the substrate in the vacuum chamber for imaging with the imaging charged particle beam microscope, e.g. an SEM, can be provided in line with another, previous testing or processing procedure and in line with a yet further, subsequent testing or processing procedure. Due to the low energies of the charged particle beam of 2 keV or below on the substrate for imaging, the structures provided on the substrate are not destroyed. Accordingly, the substrate can be provided for further processing in the display manufacturing fab. As understood herein, the number of substrates to be tested can be 10% to 100% of the entire amount of substrates in the fab for display manufacturing. Accordingly, even though the apparatus for inspecting and including a imaging charged particle beam microscope can be provided as an in-line tool without necessarily testing 100% of the substrates in the production line.
  • the imaging charged particle beam microscope e.g. an SEM
  • the vacuum chamber may include one or more valves, which may connect the vacuum chamber to another chamber, in particular if the apparatus is an inline apparatus. After a substrate has been guided into the vacuum chamber, the one or more valves can be closed. Accordingly, the atmosphere in the vacuum chamber can be controlled by generating a technical vacuum, for example, with one or more vacuum pumps.
  • An advantage of inspecting a substrate in a vacuum chamber, compared to e.g. atmospheric pressure, is that the vacuum conditions facilitate using a low-energy charged particle beam for inspecting the substrate.
  • below-energy charged particle beams can have a landing energy of 2 keV or below, particularly of 1 keV or below, such as 100 eV to 800 eV.
  • low energy beams do not penetrate deeply in the substrate and may therefore provide superior information about e.g. coated layers on the substrate.
  • the substrate support provides a substrate receiving area.
  • the terminology of a "substrate receiving area", as used herein, can include a maximal area of the substrate support available for receiving a substrate.
  • the substrate support may be adapted for receiving a substrate having the same spatial dimensions as the substrate receiving area, or for receiving a substrate having one or more smaller spatial dimensions compared to the substrate receiving area, so that the substrate fits within the substrate receiving area.
  • FIG. 2 illustrates an embodiment of the apparatus 100, wherein the substrate support 110 provides a substrate receiving area 210.
  • the substrate receiving area 210 is rectangular as indicated by the dashed line.
  • the substrate receiving area 210 may be adapted for receiving a rectangular substrate (not shown) which has the same length and width (or a smaller length and width) as the rectangular substrate receiving area 210 shown in FIG. 2.
  • FIG. 3 shows a rectangular substrate 160 provided on the substrate support 110, wherein the size of the substrate 160 shown in FIG. 3 is substantially identical to the size of the substrate receiving area 210 shown in FIG. 2.
  • the length and the width of the substrate 160 shown in FIG. 3 are substantially the same as the length and the width, respectively, of the substrate receiving area 210 shown in Fig 3.
  • the substrate has a length and width each of which is from 90% to 100% of the substrate receiving area.
  • the substrate receiving area has a first receiving area dimension along a first direction.
  • the first direction may refer to the x- direction 150.
  • the first direction may be parallel to the substrate support.
  • the substrate support may be displaceable along the first direction.
  • the first receiving area dimension of the substrate receiving area may include an extent, width, length or diameter of the substrate receiving area along the first direction.
  • the first receiving area dimension may refer to the maximal width, along the first direction, of a substrate that can be received by the substrate support.
  • the first receiving area dimension of the substrate receiving area along the first direction may refer to width 220 of the substrate receiving area 210 along the x-direction 150.
  • the width 220 may correspond to the maximal width, along the x-direction 150, of a substrate that can be received by the substrate support 110.
  • the substrate 160 shown in FIG. 3 has a substrate width 810 along the x-direction 150, wherein the substrate width 810 is essentially the same as the width 220 of the substrate receiving area 210 shown in FIG. 2.
  • the first imaging charged particle beam microscope and the second imaging charged particle beam microscope have a distance along the first direction in the range from 30% to 70% of the first receiving area dimension of the substrate receiving area. More particularly, the distance along the first direction may lie in the range from 40% to 60% of the first receiving area dimension, e.g. about 50% of the first receiving area dimension.
  • the distance along the first direction may refer to the distance 135 between the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140. In the exemplary embodiment illustrated in FIG. 2, the distance 135 is approximately 50% of the width 220 of the substrate receiving area 210.
  • the distance along the first direction may be a distance from a center of the first imaging charged particle beam microscope to a center of the second imaging charged particle beam microscope.
  • the first imaging charged particle beam microscope may define a first optical axis and the second imaging charged particle beam microscope may define a second optical axis. Additionally or alternatively, the distance along the first direction may be a distance between the first optical axis and the second optical axis.
  • the first optical axis may be parallel to the second optical axis.
  • the first optical axis and/or the second optical axis may be perpendicular to the first direction and/or to the substrate support.
  • the substrate support may be movable in the vacuum chamber with respect to the first imaging charged particle beam microscope and/or with respect to the second imaging charged particle beam microscope.
  • the second imaging charged particle beam microscope is distanced from the first imaging charged particle beam microscope by a distance of at least 30 cm, more particularly a distance of at least 40 cm, such as about 50% of the first receiving area dimension.
  • large area substrates or a substrate receiving area as described in the present disclosure may have a size of at least 1.375 m 2 .
  • the size may be from about 1.375 m (1100 mm x 1250 mm- Gen 5) to about 9 m 2 , more specifically from about 2 m 2 to about 9 m 2 or even up to 12 m 2 .
  • the substrates or substrate receiving areas, for which the structures, apparatuses, and methods according to embodiments described herein are provided, can be large area substrates as described herein.
  • a large area substrate or carrier can be GEN 5, which corresponds to about 1.375 m 2 substrates (1.1 m x 1.25 m), GEN 7.5, which corresponds to about 4.39 m 2 substrates (1.95 m x 2.25 m), GEN 8.5, which corresponds to about 5.7m 2 substrates (2.2 m x 2.5 m), or even GEN 10, which corresponds to about 9 m 2 substrates (2.88 m x 3130 m).
  • Even larger generations such as GEN 11 and GEN 12 and corresponding substrate areas can similarly be implemented.
  • the substrate size generations provide fixed industry standards even though a GEN 5 substrate may slightly deviate in size from one display manufacturer to another display manufacturer.
  • Embodiments of an apparatus for testing may for example have a GEN 5 substrate support or GEN 5 substrate receiving area such that GEN 5 substrates of many display manufacturers may be supportable by the support. The same applies to other substrate size generations.
  • the vacuum chamber has a maximum first inner dimension along the first direction, i.e. the first inner dimension is limited.
  • the first inner dimension may refer to the inner width 121 of the vacuum chamber 120 along the x-direction 150.
  • the first inner dimension may include at least one of the following: a distance along the first direction from a first wall of the vacuum chamber to a second wall of the vacuum chamber; a dimension of an interior portion of the vacuum chamber along the first direction; a width, length or width of the vacuum chamber along the first direction.
  • the first inner dimension of the vacuum chamber may lie in the range from 250 % to 600%, more particularly in the range from 260% to 370%, of the distance of the imaging charged particle beam microscopes along the first direction between the first imaging charged particle beam microscope and the second imaging charged particle beam microscope.
  • the first inner dimension of the vacuum chamber may lie in the range from 130% to 180% of the first receiving area dimension of the substrate receiving area, more particularly from 140% to 170% of the first receiving area dimension, still more particularly from 150% to 160%.
  • the first imaging charged particle beam microscope and/or the second imaging charged particle beam microscope may be arranged along a direction perpendicular to the substrate support and/or perpendicular to the first direction.
  • the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 extend along the z-direction 151 i.e. perpendicularly to the x-direction 150 and to the y-direction 152, wherein the x-y plane is parallel to the substrate support 110.
  • the first imaging charged particle beam microscope and/or the second imaging charged particle beam microscope may be tilted with respect to the substrate support and/or the first direction.
  • the first imaging charged particle beam microscope and/or the second imaging charged particle beam microscope may extend along a direction making an angle with the first direction, wherein the angle is different from 90 degrees.
  • the angle may lie in the range from 60 to 90 degrees, more particularly from 75 to 90 degrees.
  • the imaging charged particle beam microscope column may be arranged perpendicular to the substrate support and the imaging charged particle beam microscope optics may be configured to tilt the charged particle beam, e.g. by an angle of up to 20°. Having a charged particle beam, which is tilted with respect to the surface normal of the substrate, can be utilized for topography imaging or even 3D images with a high resolution, i.e. a resolution of 10 nm or below. Further details of tilting the charged particle beam can be understood with reference to FIGS. 5B and 5C.
  • FIG. 4 shows a side view of an apparatus for inspecting a substrate, according to embodiments described herein.
  • the apparatus includes a displacement unit 410.
  • the displacement unit 410 is adapted for displacing the substrate support along a first direction, e.g. along the x-direction 150 to position the substrate support 110 in below the first imaging charged particle beam microscope 130 and/or below the second imaging charged particle beam microscope 140.
  • the displacement unit 410 may be adapted for moving the substrate support 110 forward and backward along the x-direction 150, i.e. toward the right and toward the left in FIG. 4.
  • the apparatus described herein further includes a displacement unit, such as e.g. displacement unit 410 shown in FIG.
  • the displacement unit may be adapted for displacing the substrate support along the first direction.
  • the displacement unit 410 may e.g. include a plurality of linear actuators (not shown) on which the substrate support 110 rests.
  • the displacement unit may e.g. include a magnetic guiding system (not shown) for guiding the substrate support 110 along the x-direction 150.
  • the displacement unit 410 is arranged in the vacuum chamber 120.
  • part of the displacement unit 410 may extend outside of the vacuum chamber 120, in particular if the apparatus 100 is coupled to a load lock chamber or is an inline apparatus.
  • a displacement unit 410 extending outside of the vacuum chamber 120 may be adapted for transporting the substrate support 110 into and out of the vacuum chamber 120.
  • the displacement unit 410 may extend outside of the vacuum chamber 120 on the right hand side of the vacuum chamber 120 and on the left hand side of the vacuum chamber 120. Accordingly, the substrate support 110 may e.g. be moved into the vacuum chamber 120 by the displacement unit 410 from the left and may be moved out of the vacuum chamber 120 by the displacement unit 410 to the right.
  • the displacement unit may be adapted for displacing the substrate support along the first direction from a position proximate to a first end or wall of the vacuum chamber to a position proximate second end or wall of the vacuum chamber.
  • the displacement unit may have a displacement range along the first direction, wherein the displacement unit may be adapted for displacing the substrate support to an arbitrary target coordinate within the displacement range.
  • the apparatus shown in FIG. 4 may further include a further displacement unit (not shown) adapted for displacing the substrate support 110 in the vacuum chamber 120 along the y-direction 152.
  • the displacement unit 410 and the further displacement unit may form a common displacement system adapted for moving the substrate support 110 in an x-y plane. Accordingly, by suitably moving the substrate support 110 holding the substrate in the x-y plane, any area of a substrate disposed on the substrate support 110 may be positioned below the first imaging charged particle beam microscope 130 or below the second imaging charged particle beam microscope 140 for inspection of the target portion.
  • the substrate support may be mounted onto the further displacement unit or on a common displacement system formed by the displacement unit and the further displacement unit.
  • the further displacement unit may be adapted for displacing the substrate support relative to the first imaging charged particle beam microscope and/or relative to the second imaging charged particle beam microscope.
  • the further displacement unit may have a displacement range along the first direction, wherein the displacement range may lie in the range from 150% to 180% of the substrate width or the respective width of the substrate receiving area.
  • the displacement range along the first direction may according to some embodiments be larger than the distance of the substrate receiving area along the first direction.
  • one or more targets can be provided on the substrate support, wherein the one or more targets can be position below the charged particle beam of the imaging charged particle beam microscope, e.g. an SEM.
  • a pitch target can be provided, wherein structures, which can be visualized by imaging the target with e.g. the SEM, have a defined pitch. Accordingly, the SEM can be calibrated such that the pitch in the image corresponds to the real pitch of the target.
  • a Faraday cup can be provided on the substrate support such that the Faraday cup can be provided below the charged particle beam to measure the current of the beam.
  • a step target with structures of different defined heights can be provided. A step target can be utilized to characterize the focus position of the probe scanned over the substrate for imaging.
  • a displacement system may further include a z-stage for displacing the substrate support along a z-direction, i.e. changing the distance of the substrate support with respect to the one or more imaging charged particle beam microscopes.
  • the z-stage allows for positioning the substrate at the correct working distance for imaging with an imaging charged particle beam microscope.
  • the z-stage can be provided by two wedges sliding on top of each other, wherein the height is varied by the amount at which the wedges overlap. Varying the z-position with a z-stage including two wedges allows for z-positioning of the substrate with reduced generation of vibrations in the system.
  • the apparatus 100 shown in FIG. 4 further includes a vacuum pump 420 adapted for generating a vacuum in the vacuum chamber 120.
  • the vacuum pump 420 is fluidly coupled to the vacuum chamber 120 via connection 430, e.g. a conduit, wherein the connection 430 connects the vacuum pump 420 with the vacuum chamber.
  • the vacuum pump 420 may evacuate the vacuum chamber. Accordingly, a pressure of e.g. 10 "1 mbar or below may be provided in the vacuum chamber.
  • the vacuum pump 420 may vibrate. Via the connection 430, which is attached to the vacuum pump 420 and to the vacuum chamber 120, mechanical vibrations of the vacuum pump 420 may be transmitted to the vacuum chamber 120.
  • an apparatus for display inspection may include a vibration damper adapted for damping vibrations, in particular mechanical vibrations, of the vacuum chamber generated by a vacuum generating device.
  • the apparatus 100 shown in FIG. 4 may include further vacuum pumps (not shown), such as one or more further vacuum pumps connected to the first imaging charged particle beam microscope and/or the second imaging charged particle beam microscope.
  • further vacuum pumps such as one or more further vacuum pumps connected to the first imaging charged particle beam microscope and/or the second imaging charged particle beam microscope.
  • an associated further vibration damper may be included in the apparatus.
  • the function of a further vacuum damper is similar to the function of the vacuum damper 431 as described herein.
  • the vacuum chamber 120 shown in FIG. 4 is mounted on pneumatic elements 440 adapted for pneumatically reducing vibrations of the vacuum chamber 120.
  • the vacuum chamber 120 is mounted on legs 441, so that the vacuum chamber 120 is at an elevated position above the ground.
  • each leg of the vacuum chamber 120 includes a pneumatic element.
  • a pneumatic element according to embodiments described herein, can be adapted for pneumatically damping vibrations introduced to the vacuum chamber.
  • polymer elements or rubber elements may be utilized for vibration reduction, e.g. by supporting the vacuum chamber 120 or the legs 441 on one or more polymer elements or one or more rubber elements.
  • a pneumatic element may include a compartment containing pressurized air or a pressurized gas.
  • External vibrations such as e.g. vibrations of the ground, may be transmitted to the legs 441.
  • the external vibrations may be absorbed by the pneumatic elements 440, in particular by the pressurized air or gas, before the external vibrations can be transmitted to the vacuum chamber 120.
  • the pneumatic elements 440 may isolate the vacuum chamber 120 from the external vibrations, or may at least reduce the amount of external vibration being transmitted to the vacuum chamber 120.
  • the apparatus 100 may have further legs and/or further pneumatic elements which may not be visible in the side view of FIG. 4.
  • the apparatus 100 may be mounted on four legs and may have four pneumatic elements, wherein each leg is mounted on a pneumatic element.
  • FIG. 4 further shows a vibration sensor 450 adapted for measuring the vibration of the vacuum chamber 120.
  • the vibration sensor may be adapted for measuring amplitudes and/or frequencies of the vibrations of the vacuum chamber 120.
  • the vibration sensor 450 may further be adapted for measuring vibrations in one or more directions.
  • the vibration sensor 450 may include an optical source (not shown) adapted for generating an optical beam.
  • the optical beam may be directed onto the vacuum chamber 120, for example onto a wall of the vacuum chamber 120, wherein at least part of the optical beam may be reflected from the vacuum chamber.
  • the vibration sensor 450 may further include a detector (not shown) for detecting the optical beam after being reflected from the vacuum chamber 120. Accordingly, information about the vibration of the vacuum chamber 120 may be collected by the vibration sensor 450.
  • the vibration sensor may be an interferometer.
  • the vibration sensor is configured for measuring vibrations influencing the relative position between the imaging charged particle beam microscope and the substrate support. As shown in FIG. 4, this measurement may be conducted at the vacuum chamber in light of the relatively large amplitudes generated at the vacuum chamber.
  • a vibration sensor e.g. an interferometer or an piezo vibration sensor, can be mounted at the substrate support to measure the relative position (and position variation) of the imaging charged particle beam microscope or may be mounted to the imaging charged particle beam microscope to measure the relative position (and position variation) of the substrate support.
  • the interferometer may include a first mirror mounted at the imaging charged particle beam microscope and a second mirror mounted on the substrate support.
  • the measurements with respect to the two mirrors may be used to calculate a relative movement of the imaging charged particle beam microscope, e.g. an SEM and the substrate support, i.e. the stage.
  • the interference may provide information about the vibration of the substrate relative to the first imaging charged particle beam microscope.
  • the signal indicative of the relative movement (vibration) may be used in a controller of a scanning deflector included in the imaging charged particle beam microscope in order to compensate for the relative movement.
  • the vibration sensor may mounted at the first imaging charged particle beam microscope and/or at the second imaging charged particle beam microscope, wherein the vibration sensor may be adapted for measuring vibrations of the first imaging charged particle beam microscope and/or the second imaging charged particle beam microscope.
  • the vibration sensor may be a piezo vibration sensor, an acceleration sensor or the like.
  • Data collected by the vibration sensor 450 regarding the relative position between the imaging charged particle beam microscope and the substrate support and/or the vibrations of the vacuum chamber 120 may be transmitted to a control unit (not shown).
  • the control unit may control the apparatus 100.
  • the control unit may control the first imaging charged particle beam microscope 130, the second imaging charged particle beam microscope 140, the displacement unit 410 or other components included in the apparatus 100, e.g. to temporarily pause the inspection of the substrate if the vibration sensor 450 indicates that the vibration of the vacuum chamber range exceed a predetermined limit.
  • the measurement of the relative position may be used to correct the images with an appropriate correction factor resulting from the measurement of the relative position.
  • the apparatus 100 shown in FIG. 4 may further include an acoustic shield adapted for shielding the vacuum chamber 120 from acoustic vibrations and/or noise.
  • the apparatus shown in FIG. 4 further shows reinforcement bars 470 arranged in the vacuum chamber 120.
  • reinforcement bars 470 may extend along the z-direction 151.
  • the apparatus 100 may include further reinforcement bars or other reinforcement structures, in particular three, four, six, eight or more reinforcement bars.
  • the reinforcement bars 470 may be rigid bars, beams or columns which may be made from one or more materials selected from the group consisting of carbon steel, mineral casting or any other material with good damping properties for damping vibrations, which may have already been introduced to the vacuum chamber.
  • the reinforcement bars 470 are adapted for structurally reinforcing the vacuum chamber 120 to reduce vibration of the vacuum chamber 120.
  • reinforcement bars may additionally or alternatively also be provided at or on the outside of the vacuum chamber.
  • the reinforcement bars may be utilized to increase the stiffness of the vacuum chamber. Accordingly, vibrations generated at the vacuum chamber result in a smaller vibration amplitude upon increased stiffness of the vacuum chamber.
  • the apparatus 100 includes a combination of several components for reducing vibration of the vacuum chamber, such as, e.g. reinforcement bars 470, an acoustic shield, pneumatic elements 440 and a vibration damper 431.
  • components for reducing vibration of the vacuum chamber such as, e.g. reinforcement bars 470, an acoustic shield, pneumatic elements 440 and a vibration damper 431.
  • the apparatus, and particularly the vacuum chamber of the apparatus for inspecting displays may further include or be made of one or more materials comprising at least one material selected from the group consisting of cast iron, mineral casting, or another material with good damping properties.
  • a vibration damper provided in or at a connection between the vacuum generating device and the vacuum chamber, reinforcement bars, on or more pneumatic elements, an acoustic shield, and a vibration sensor, which may be coupled to a scanning deflector of the imaging charged particle beam microscope are described.
  • a vibration damping element, a vibration reduction element, a vibration sensing element, or a vibration compensation element as described herein can be included the system for testing of a large area substrate.
  • FIG. 5A shows an imaging charged particle beam microscope, such as the first imaging charged particle beam microscope and/or the second imaging charged particle beam microscope, as described herein.
  • the charged particle beam device 500 includes an electron beam column 20 providing e.g. a first chamber 21, a second chamber 22 and a third chamber 23.
  • the first chamber which can also be referred to as a gun chamber, includes an electron beam source 30 having an emitter 31 and suppressor 32.
  • the emitter 31 is connected to a power supply 531 for providing a potential to the emitter.
  • the potential provided to the emitter may be such that the electron beam is accelerated to an energy of e.g. 20 keV or above. Accordingly, the emitter may be biased to a potential of -20 kV or higher negative voltages, e.g. in the case where the column and the beam guiding tube, which also provides the upper electrode 562, are on ground potential, indicated by the reference numerals 3 in FIG. 5A.
  • the emitter can be biased to another potential in the event the column and/or the beam guiding tube is biased to a potential different from ground potential, wherein the potential difference between the emitter and the column (or beam guiding tube) can be -20 kV. Also other potential differences, for example -10 kV to -40 kV can be provided.
  • an electron beam (not shown) may be generated by the electron beam source 30.
  • the beam may be aligned to the beam limiting aperture 550, which is dimensioned to shape the beam, i.e. blocks a portion of the beam.
  • the beam may pass through the beam separator 580, which separates the primary electron beam from a signal electron beam, i.e. from signal electrons.
  • the primary electron beam may be focused on the substrate 160 by the objective lens.
  • the substrate 160 is positioned on a substrate position on the substrate support 110. On impingement of the electron beam onto the substrate 160 signal electrons, for example, secondary and/or backscattered electrons or x-rays are released from the substrate 160, which can be detected by a detector 598.
  • a condenser lens 520 and a beam shaping or beam limiting aperture 550 are provided.
  • the two-stage deflection system 540 is provided between the condenser lens and the beam limiting aperture 550, e.g. a beam shaping aperture, for alignment of the beam to the aperture.
  • the electrons may be accelerated to the voltage in the column by an extractor or by the anode.
  • the extractor can, for example, be provided by the upper electrode of the condenser lens 520 or by a further electrode (not shown).
  • the objective lens has a magnetic lens component 561 having pole pieces 64 and 63 and having a coil 62, which focuses the primary electron beam on the substrate 160.
  • the substrate 160 can be positioned on the substrate support 110.
  • the objective lens shown in FIG. 5A includes the upper pole piece 63, the lower pole piece 64 and the coil 62 forming a magnetic lens component 60 of the objective lens. Further, the upper electrode 562 and a lower electrode 530 form an electrostatic lens component of the objective lens.
  • a scanning deflector assembly 570 is provided.
  • the scanning deflector assembly 570 can, for example, be a magnetic, but preferably an electrostatic scanning deflector assembly, which is configured for high pixel rates.
  • the scanning deflector assembly 570 may be a single stage assembly, as shown in FIG. 5A. Alternatively, also a two-stage or even a three-stage deflector assembly can be provided. Each stage is provided at a different position along the optical axis 2.
  • the lower electrode 530 is connected to a voltage supply (not shown).
  • the embodiment illustrated in FIG. 5A shows the lower electrode 530 below the lower pole piece 64.
  • the lower electrode being the deceleration electrode of the immersion lens component; i.e. a retarding field lens component, of the objective lens is typically at a potential to provide a landing energy of the charged particles on the substrate of 2 keV or below, e.g. 500 V or 1 keV.
  • the deceleration of the primary charged particle beam can be provided in the vicinity of the specimen, for example in or behind the objective lens, or a combination thereof.
  • a deceleration can be provided by the lower electrode 530, i.e. a retarding field lens, respectively.
  • a deceleration can e.g. be provided by an electrostatic lens component of the objective lens.
  • a retarding bias voltage can be applied to the specimen and/or the substrate support in order to provide a retarding field lens component according to embodiments described herein.
  • the objective lens can be an electrostatic-magnetic compound lens having e.g. an axial gap or a radial gap, or the objective lens can be an electrostatic retarding field lens
  • An advantage of having a landing energy of 2keV or below, particularly a landing energy of 1 keV or below, is that the primary electron beam impinging onto the substrate generates a stronger signal compared to high-energy electron beams. Since layers, e.g. LTPS layers, deposited on the substrate are thin and since high-energy electrons penetrate deeply into the substrate, i.e. below the layer, only a few electrons may generate a detector signal that contains information about the deposited layer. In contrast, low-energy electrons, such as electrons having a landing energy of 2keV or below, penetrate into a shallow region of the substrate only and thus provide more information about the deposited layer. Accordingly, an improved image of e.g. grain boundaries may be provided even when, as provided by embodiments described herein, no surface etching of the substrate is carried out.
  • a landing energy of e.g. 2 keV or below such as 1 keV or below
  • a high charged particle beam energy in the column for example a beam energy of 10 keV or above, such as 30 keV or above.
  • Embodiments may include a deceleration before the specimen, e.g. within the objective lens and/or between the objective lens and the specimen of a factor of 5 or more, such as a factor of 10 or more.
  • a low landing energy of 2 keV or below may also be provided without a deceleration, e.g. in the event the beam energy within the column is not above 2 keV.
  • the beam separator 580 is adapted for separating the primary and the signal electrons.
  • the beam separator can be a Wien filter and/or can be at least one magnetic deflector, such that the signal electrons are deflected away from the optical axis 2.
  • the signal electrons are then guided by a beam bender 592, e.g. a hemispherical beam bender, and a lens 594 to the detector 598.
  • a beam bender 592 e.g. a hemispherical beam bender
  • the detector can be a segmented detector configured for detecting signal electrons depending on the starting angle at the specimen.
  • an imaging charged particle beam microscope may also include an x-ray detector, e.g. a detector for EDX (Energy-dispersive X-ray spectroscopy) measurements.
  • a x-ray detector may allow to analyze the characteristic energy of the x-rays emitted from the substrate in response to the illumination by the electron beam so that chemical composition of the substrate can be analyzed.
  • an electrostatic retarding lens component can be operated to have higher charged particle beam landing energies, e.g. from 5 keV to 15 keV.
  • the first imaging charged particle beam microscope and the second imaging charged particle beam microscope may be charged particle beam devices of an imaging charged particle beam microscope type, such as e.g. the charged particle beam device 500 shown in FIG. 5A.
  • FIGS. 5B and 5C illustrate further optional embodiments of portions of a charged particle beam device 500.
  • FIGS. 5A and 5B options to tilt the primary charged particle beam to impinge on the substrate under a predetermined tilted beam landing angle are shown.
  • an imaging charged particle beam microscope as described herein may be utilized for imaging with one or more tilted beams. Accordingly, 3D imaging, imaging of steps, imaging of trenches, holes, and/or imaging of protrusions can be improved.
  • a charged particle beam source (not shown) emits a charged particle beam to travel along the optical axis 2 towards the objective lens 560 which focuses the beam onto the surface of a substrate 160.
  • the pre-lens deflection unit 510 can include two deflection coils deflect the beam from the optical axis 2. In light of the two stages, the beam can be deflected to seemingly emerge from a point coincident with the apparent position of the charged particle beam source.
  • the pre-lens deflection unit 510 is arranged between the charged particle source and the objective lens 560.
  • An in-lens deflection unit 512 can be provided inside the field of the objective lens such that the respective fields overlap.
  • the in-lens deflection unit 512 can be a two-stage unit comprising two deflection coils. While the schematic sketch of FIG. 5B shows an arrangement where one of the coils is positioned above and one coil is positioned below the principal plane of the objective lens 560, other arrangement are also possible, particularly arrangements providing for an overlap between the fields of the in-lens deflection unit and the objective lens.
  • the in-lens deflection unit 512 can redirect the beam so that the beam crosses the center of the objective lens, i.e. the center of the focusing action, at the optical axis.
  • the redirection is such that the charged particle beam hits the surface of the substrate from a direction, which is substantially opposite to the direction without the beam crossing the optical axis 2.
  • the combined action of the in-lens deflection unit 512 and the objective lens 560 directs the primary charged particle beam back to the optical axis such that the primary charged particle beam hits the sample under the predetermined tilted beam landing angle.
  • a charged particle beam source (not shown) emits a charged particle beam to travel along the optical axis 2 towards the objective lens 560 which focuses the beam onto the surface of a substrate 160.
  • the deflection unit 510 comprises two deflectors to deflect the beam away from the optical axis. In light of the two stages, the beam can be deflected to seemingly emerge from a point coincident with the apparent position of the charged particle beam source.
  • the pre-lens deflection unit 510 can be arranged between the charged particle source and the objective lens 560. Above the pre-lens deflection unit 510, a Wien filter 513 can be disposed which generates crossed electric and magnetic fields.
  • the off-axis path of the charged particle beam trough the objective lens 560 causes a first chromatic aberration.
  • the energy dispersive effect of the Wien filter 513 introduces a second chromatic aberration of the same kind as the first chromatic aberration.
  • the second chromatic aberration can be adjusted to have the same magnitude but opposite direction as the first chromatic aberration.
  • the second chromatic aberration substantially compensates the first chromatic aberration in the plane of the substrate surface.
  • the primary charged particle beam is tilted by travelling off-axis through the objective lens 560 and the focusing action of the objective lens.
  • FIGS. 5B and 5C show the deflection units comprising two deflection coils, it is also possible use other deflection units, e.g. deflection units consisting of a single deflector only. Yet further, instead of using coils for magnetic deflection, also electrostatic deflectors or combined magnetic electrostatic deflectors can be used. According to yet further embodiments, which may additionally or alternatively be applied, a beam tilt may also be introduced by mechanically tilting the column, i.e. the optical axis 2 with respect substrate. Yet, tilting the charged particle beam by providing a desired beam path within the column provides for faster switching between beam angles and reduces the introduction of vibration as compared to a mechanical movement. Tilting the charged particle beam allows for further imaging options, which may be beneficial for 3D imaging, imaging of steps, trenches, holes, or protrusion. For example, critical dimensioning (CD) may beneficially utilize tilting of the beam.
  • CD critical dimensioning
  • an apparatus for inspecting a substrate particularly a substrate for display manufacturing.
  • the apparatus includes a vacuum chamber as described herein.
  • the apparatus further includes a substrate support arranged in the vacuum chamber, as described herein.
  • the apparatus further includes a first imaging charged particle beam microscope and a second imaging charged particle beam microscope, as described herein.
  • the second imaging charged particle beam microscope is distanced from the first imaging charged particle beam microscope by a distance of at least 30 cm.
  • FIGS. 6a-b illustrate a method for inspecting a substrate, according to embodiments described herein.
  • the method is carried out using the apparatus 100 for testing large area substrates as described in other embodiments described herein.
  • FIG. 6a shows a substrate 160 disposed on the substrate support 110 in the vacuum chamber 120.
  • the substrate 160 has a substrate width 810 along the x-direction 150.
  • a first charged particle beam 610 is generated in the vacuum chamber 120 by the first imaging charged particle beam microscope 130. This corresponds to box 902 in FIG. 10.
  • the first charged particle beam 610 is directed onto the substrate 160 for inspecting the substrate 160, wherein the first charged particle beam 610 impinges onto the substrate 160 at a first beam position 611.
  • the terminology of the "first beam position", as used herein, may include a position of the first charged particle beam upon impingement of the first charged particle beam onto the substrate.
  • the first charged particle beam 610 may impinge onto the substrate 160 for inspecting a first test object (not shown), e.g. a first defect, on the substrate.
  • a first test object e.g. a first defect
  • the first charged particle beam 610 travels from the first imaging charged particle beam microscope 130 to the substrate 160 along the first optical axis 131, so that the first charged particle beam 610 impinging onto the substrate 160 is perpendicular to the substrate 160.
  • the first charged particle beam 610 impinging onto the substrate 160 may also be tilted with respect to the substrate 160 as e.g. described with respect to FIGS. 5B and 5C.
  • a tilt may be introduced by tilting of the column of the first imaging charged particle beam microscope or by tilting of the beam within the column, e.g. by a deflection system for deflecting the charged particle beam.
  • secondary and/or backscattered particles may be generated.
  • the secondary and/or backscattered particles may be detected by a detector included in the first imaging charged particle beam microscope 130, as described above. Data gathered by the detector and resulting from the secondary and/or backscattered particles may provide information about the substrate 160 and/or may be used to image part of the substrate 160.
  • the substrate 160 held by the substrate support 110 has been displaced along the x-direction compared to the substrate 160 shown in FIG. 6a.
  • the dashed lines 690 in FIG. 6b indicate the position of the substrate 160 prior to the displacement of the substrate 160, i.e. the position of the substrate 160 shown in FIG. 6a.
  • the substrate 160 shown in FIG. 6b has been displaced over a distance 650 along the x-direction 150. Displacement of the substrate support 110 along the x-direction 150 is provided by the displacement unit 410.
  • the distance 650 along which the substrate 160 is displaced may be e.g. for a GEN 6 substrate at most 900 mm. Alternatively or additionally, the distance 650 may lie in the range from 50 % to 70% of the substrate width 810.
  • a second charged particle beam 620 is generated in the vacuum chamber 120 by the second imaging charged particle beam microscope 140.
  • the second charged particle beam 620 is directed onto the substrate 160 for inspecting the substrate 160, wherein the second charged particle beam 620 impinges onto the substrate 160 at a second beam position 621.
  • the wording "second beam position" may include a position of the second charged particle beam upon impingement of the second charged particle beam onto the substrate.
  • the second charged particle beam 620 may impinge onto the substrate 160 for inspecting a second test object (not shown), e.g. a second defect, on the substrate.
  • the second charged particle beam 620 travels from the second imaging charged particle beam microscope 140 to the substrate 160 along the second optical axis 141.
  • the second charged particle beam 620 impinging onto the substrate 160 may also be tilted with respect to the substrate 160 as e.g. described with respect to FIGS. 5B and 5C.
  • a tilting may be introduced by tilting of the column of the first imaging charged particle beam microscope or by tilting of the beam within the column, e.g. by a deflection system for deflecting the charged particle beam.
  • the second beam position 621 is distanced from the first beam position 611 by a beam distance 630. Since, in the exemplary embodiments illustrated in FIGS. 6a-b, the first charged particle beam 610 travels along the first optical axis 131 upon impingement of the first charged particle beam 610 onto the substrate 160, and since the second charged particle beam 620 travels along the second optical axis 141 upon impingement of the second charged particle beam 620 onto the substrate 160, the beam distance 630 coincides with the distance between the first optical axis 131 and the second optical axis 141.
  • the beam distance 630 may also be different from the distance between the first optical axis 131 and the second optical axis 141, for example if the first charged particle beam 610 and/or the second charged particle beam 620 are tilted with respect to the substrate 160.
  • a method for inspecting a substrate is provided. The method includes providing a substrate in a vacuum chamber.
  • the substrate may be provided to a movable substrate support arranged in the vacuum chamber, as described herein. Vacuum conditions may be provided in the vacuum chamber, wherein the vacuum chamber may have a pressure below 10 "1 mbar.
  • the method further includes generating a first charged particle beam with a first imaging charged particle beam microscope.
  • the first imaging charged particle beam microscope may be a first imaging charged particle beam microscope as described above.
  • the substrate may be provided below the first imaging charged particle beam microscope.
  • the working distance between the substrate and the first imaging charged particle beam microscope may be 20 mm or below. Typically, the working distance will be defined by the distance between the lower pole piece and the substrate.
  • the first charged particle beam impinges on the substrate at a first beam position.
  • first beam position may include a position of the first charged particle beam upon impingement of the first charged particle beam onto the substrate.
  • the first charged particle beam may impinge onto a first area of the substrate for inspecting the first area.
  • the method may further include displacing the substrate in the vacuum chamber by a displacement distance.
  • the displacement distance may e.g. refer to the distance 650 shown in FIG. 6b.
  • the substrate may be displaced in a direction parallel to the substrate or to a surface of the substrate being inspected by the first imaging charged particle beam microscope and/or by the second imaging charged particle beam microscope.
  • the substrate may be displaced along the first direction, as described herein.
  • the method further includes generating a second charged particle beam with a second imaging charged particle beam microscope.
  • the second imaging charged particle beam microscope may be a second imaging charged particle beam microscope as described above, e.g. an SEM.
  • the displaced substrate may be disposed below the second imaging charged particle beam microscope.
  • the working distance between the substrate and the second imaging charged particle beam microscope may be 20 mm or below.
  • the first charged particle beam and the second charged particle beam may be generated at different moments in time, so that the substrate may be inspected by the first charged particle beam and by the second charged particle beam at different moments in time.
  • the first charged particle beam and the second charged particle beam may be generated in parallel, so that the substrate may be inspected by the first charged particle beam and by the second charged particle beam at the same moment in time.
  • the arrangement of the first imaging charged particle beam microscope and the second imaging charged particle beam microscope according to embodiments may also be utilized to increase the throughput in addition to reducing the chamber dimensions and, thus, the resolution of the inspection apparatus.
  • the second charged particle beam impinges on the substrate at a second beam position.
  • the first beam position is distanced from the second beam position along the first direction by a second distance of at least 30 cm.
  • the terminology of the "second beam position", as used herein may include a position of the second charged particle beam upon impingement of the second charged particle beam onto the substrate.
  • the second charged particle beam may impinge onto a second area of the substrate for inspecting the second area, wherein the second area is distanced from the first area.
  • the first charged particle beam and the second charged particle beam may inspect different portions of the substrate.
  • the distance between the first area and the second area may lie in the range from 30 cm to 180 cm, which may dependent on the size of the large area substrate, for which the testing system is designed.
  • the first charged particle beam and the second charged particle beam may impinge onto the substrate perpendicularly to the substrate or at an angle with respect to the substrate, wherein the angle may be less than 90 degrees.
  • a landing energy of the first charged particle beam or of the second charged particle beam impinging onto the sample may lie in the range from 0 keV to 2 keV, still more particularly from 100 eV to 1 keV.
  • FIGS. 7a-d show examples of different arrangements of imaging charged particle beam microscopes, including the first imaging charged particle beam microscope and the second imaging charged particle beam microscope, in a vacuum chamber, according to embodiments described herein.
  • the arrangement of the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 shown in FIG. 7a is similar to embodiments considered above.
  • the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 are arranged along the x-direction 150.
  • both the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 are arranged at the same y-coordinate 710 with respect to the y- direction 152.
  • FIG. 7b shows the apparatus 100, wherein the first imaging charged particle beam microscope 130 is arranged in the vacuum chamber 120 at a first y-coordinate 720 and wherein the second imaging charged particle beam microscope is arranged at a second y-coordinate 721 different from the first y-coordinate.
  • the distance 135 between the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope along the x-direction 150 is a distance between a first projection axis 722 and a second projection axis 723.
  • the first projection axis 722 extends through the center 724 of the first imaging charged particle beam microscope 130 along the y-direction 152 and the second projection axis 723 extends through the center 725 of the second imaging charged particle beam microscope 140 along the y-direction.
  • the distance 135 between the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 along the x-direction 150 is a distance between two points A and B, where A is the orthogonal projection of the center 724 onto the x-direction 150 and B is the orthogonal projection of the center 725 onto the x-direction 150.
  • FIG. 7c illustrates an embodiment according to which the apparatus 100 further includes a third imaging charged particle beam microscope 750, and wherein the first imaging charged particle beam microscope 130, the second imaging charged particle beam microscope 140 and the third imaging charged particle beam microscope 750 are arranged along the x-direction 150.
  • the first imaging charged particle beam microscope 130, the second imaging charged particle beam microscope 140 and the third imaging charged particle beam microscope 750 are arranged at the same y-coordinate 730 with respect to the y-direction 152.
  • the third imaging charged particle beam microscope 750 is distanced from the first imaging charged particle beam microscope 130 along the x- direction 150 by a distance 761 and distanced from the second imaging charged particle beam microscope 140 along the x-direction by a distance 762.
  • the first imaging charged particle beam microscope 130, the second imaging charged particle beam microscope 140 and the third imaging charged particle beam microscope 750 are linearly arranged in a symmetric manner, wherein the distance 761 is equal to the distance 762.
  • the inclusion of a third imaging charged particle beam microscope 750 as shown in FIG. 7c may allow for a further reduction of the distance over which a substrate is to travel along the x-direction 150 for the inspection of defects on the substrate.
  • the inner width 121 of the vacuum chamber 120 shown in FIG. 7c is smaller compared to a vacuum chamber including two imaging charged particle beam microscopes, such as e.g. vacuum chamber 120 shown in FIG. 7a.
  • FIG. 7d illustrates an embodiment according to which the apparatus 100 further includes a fourth imaging charged particle beam microscope 760.
  • the first imaging charged particle beam microscope 130, the second imaging charged particle beam microscope 140, the third imaging charged particle beam microscope 750 and the fourth imaging charged particle beam microscope 760 are symmetrically arranged as an array shaped as a square.
  • the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 are arranged as a first row of the array at a first y-coordinate 741.
  • the third imaging charged particle beam microscope 750 and the fourth imaging charged particle beam microscope 760 are arranged as a second row of the array at a second y-coordinate 740.
  • the third imaging charged particle beam microscope 750 is distanced from the first imaging charged particle beam microscope 130 along the y-direction 152 by a distance 781 and is distanced from the fourth imaging charged particle beam microscope 760 along the x-direction by a distance 782.
  • the fourth imaging charged particle beam microscope 760 is further distanced from the second imaging charged particle beam microscope 140 by a distance 783 along the y-direction.
  • the distance 135, the distance 781, the distance 782 and the distance 783 are equal distances.
  • an arrangement of four imaging charged particle beam microscopes as shown in FIG. 7d may allow for a reduction of the distance over which a substrate is to travel along the y-direction 152 for inspecting defects on the substrate.
  • a dimension 770 of the vacuum chamber 120 along the y-direction may be reduced compared to a vacuum chamber including two imaging charged particle beam microscopes, such as e.g. vacuum chamber 120 shown in FIG. 7a.
  • the distance along the first direction between the first imaging charged particle beam microscope and the second imaging charged particle beam microscope, as described herein, may be an absolute distance between the first imaging charged particle beam microscope and the second imaging charged particle beam microscope, in particular if the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 are arranged along the first direction.
  • the distance 135 along the x-direction is the absolute distance between the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140, wherein the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 are arranged along the x-direction 150.
  • the distance along the first direction may be a projected distance along the first direction, in particular if the first imaging charged particle beam microscope and the second imaging charged particle beam microscope are not arranged along the first direction.
  • the projected distance may be smaller than the absolute distance between the first imaging charged particle beam microscope and the second imaging charged particle beam microscope.
  • the distance along the first direction may refer to the projected distance 135 between the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140, wherein the first imaging charged particle beam microscope 130 and the second imaging charged particle beam microscope 140 are not arranged along the x-direction 150.
  • the apparatus may include one or more further imaging charged particle beam microscopes adapted for inspecting the substrate supported by the substrate support, in particular a third and/or a fourth imaging charged particle beam microscope.

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PCT/EP2014/079018 2014-12-22 2014-12-22 Apparatus for inspecting a substrate, method for inspecting a substrate, large area substrate inspection apparatus and method of operating thereof WO2016101978A1 (en)

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JP2017528470A JP6604704B2 (ja) 2014-12-22 2014-12-22 基板の検査装置、基板の検査方法、大面積基板検査装置、及びその操作方法
KR1020177020564A KR20170101265A (ko) 2014-12-22 2014-12-22 기판을 검사하기 위한 장치, 기판을 검사하기 위한 방법, 대면적 기판 검사 장치 및 그 동작 방법
CN202211703467.3A CN115901831A (zh) 2014-12-22 2014-12-22 用于检查基板的设备、用于检查基板的方法、大面积基板检查设备及其操作方法
CN201480084213.5A CN107110799A (zh) 2014-12-22 2014-12-22 用于检查基板的设备、用于检查基板的方法、大面积基板检查设备及其操作方法
PCT/EP2014/079018 WO2016101978A1 (en) 2014-12-22 2014-12-22 Apparatus for inspecting a substrate, method for inspecting a substrate, large area substrate inspection apparatus and method of operating thereof
TW104139058A TWI673748B (zh) 2014-12-22 2015-11-25 用於檢查基板的設備、用於檢查基板的方法

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