WO2016095259A1 - 加热腔室以及半导体加工设备 - Google Patents

加热腔室以及半导体加工设备 Download PDF

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Publication number
WO2016095259A1
WO2016095259A1 PCT/CN2014/095084 CN2014095084W WO2016095259A1 WO 2016095259 A1 WO2016095259 A1 WO 2016095259A1 CN 2014095084 W CN2014095084 W CN 2014095084W WO 2016095259 A1 WO2016095259 A1 WO 2016095259A1
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WO
WIPO (PCT)
Prior art keywords
heating
ring
heating chamber
electrode
inner ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2014/095084
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English (en)
French (fr)
Inventor
贾强
赵梦欣
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Beijing NMC Co Ltd
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Beijing NMC Co Ltd
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Publication date
Application filed by Beijing NMC Co Ltd filed Critical Beijing NMC Co Ltd
Priority to US15/533,573 priority Critical patent/US10273572B2/en
Priority to SG11201704891XA priority patent/SG11201704891XA/en
Publication of WO2016095259A1 publication Critical patent/WO2016095259A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/0033—Heating devices using lamps
    • H05B3/0038—Heating devices using lamps for industrial applications
    • H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3312—Vertical transfer of a batch of workpieces

Definitions

  • the present invention relates to the field of semiconductor device manufacturing, and in particular to a heating chamber and a semiconductor processing apparatus.
  • PVD Physical Vapor Deposition
  • the copper interconnect layer mainly includes steps of degassing, pre-cleaning, Ta(N) deposition, and Cu deposition, wherein the degassing step is to remove water vapor and other volatile impurities on the workpiece to be processed such as a substrate.
  • the degassing step is carried out, it is necessary to heat the workpiece to be processed such as a substrate to 300 ° C or higher by using a heating chamber.
  • the heating chamber includes a barrel-shaped shield 3 and a reflector 2 disposed at the top thereof, and a sealed quartz window 9 is disposed inside the heating chamber, and the heating chamber is separated by a sealed quartz window 9.
  • the upper sub-chamber and the lower sub-chamber the upper sub-chamber is an atmospheric environment, and the lower sub-chamber is a vacuum environment.
  • a support pin 10 for carrying the substrate 4 is disposed at the bottom of the lower sub-chamber; a heating bulb 6 is disposed in the upper sub-chamber, and the heating bulb 6 is fixed on the bulb mounting plate 1 through the bulb mount 7, and is located at the reflection Below the plate 2, the substrate 4 is heated by heat radiation through the sealed quartz window 9.
  • a transfer opening 11 is provided on the shield 3 for feeding the substrate 4 into or out of the heating chamber.
  • the above heating chamber inevitably has the following problems in practical applications:
  • the heating bulb 6 is discretely arranged, the heat radiated from the bulb 6 to the respective regions of the substrate 4 is uneven, resulting in uneven temperature in various regions of the substrate 4, resulting in process unevenness. Moreover, in the process of heating the substrate 4, since the edge region of the substrate 4 is closer to the screen The member 3, and thus its heat dissipation rate, is higher than the heat dissipation rate of the central region of the substrate 4, resulting in a temperature difference between the central region and the edge region of the substrate 4, further reducing process uniformity.
  • the above heating chamber can only perform a degassing operation on a limited number of substrates in a single time, and the use time is long (close to 200 seconds, which is four times that of a process such as a copper barrier layer process), Therefore, the number of substrates that can be processed per unit time is small, and the process time accounts for the largest proportion of the total process time of some PVD processes, which makes the degassing step a key factor that restricts the capacity of the entire PVD equipment. Therefore, there is a need for a highly efficient heating chamber to increase the throughput of PVD equipment.
  • the present invention is directed to at least one of the technical problems existing in the prior art, and proposes a heating chamber and a semiconductor processing apparatus which can realize not only a single time for a plurality of substrates arranged in a vertical direction at the same time. Heating is performed to multiply the number of processed substrates per unit time, and it is easier to ensure temperature uniformity between regions of the substrate and between the substrates, thereby improving process uniformity.
  • a heating chamber which is a vacuum environment and has a transfer opening through which the substrate can pass.
  • the heating chamber includes: a heating cylinder disposed in the heating chamber and located above the film opening; an annular heating device fixedly connected to the heating cylinder and disposed around the heating cylinder For radiating heat from the periphery of the heating cylinder to the inside; a cassette for carrying a plurality of substrates, and arranging the plurality of substrates along the axial direction of the heating cylinder; And a lifting device for driving the cassette to rise into an internal space defined by the annular heating device or to a position corresponding to the transfer opening.
  • the annular heating device comprises: a plurality of heating lamps, forming a cylindrical heat source circumferentially along the heating cylinder; a supporting assembly for fixing the plurality of heating lamps; and an electric lead-in assembly for Current is conducted to each of the heating lamps.
  • the support assembly comprises an upper inner ring, a lower inner ring and an inner ring connecting piece, all of which are Made of insulating material.
  • the upper inner ring and the lower inner ring are oppositely disposed in the axial direction of the heating cylinder, and each heating lamp tube is located between the upper inner ring and the lower inner ring, and is respectively fixedly connected with the two;
  • the number of the inner ring connectors is plural, and is arranged along the circumferential direction of the heating cylinder; each inner ring connector is respectively connected to the upper inner ring and the lower inner ring, and supports the two .
  • the electric lead-in assembly comprises an upper conductive ring, a lower conductive ring and an electrode group.
  • the upper conductive ring is disposed around the outer side of the upper inner ring
  • the lower conductive ring is disposed around the outer side of the lower inner ring
  • the positive/negative electrode of each heating tube and the upper conductive ring respectively /the lower conductive ring is electrically connected
  • the electrode group includes a positive electrode and a negative electrode, and the inner end of the positive electrode/negative electrode is simultaneously connected to the positive/negative electrode of each heating lamp through the upper conductive ring/lower conductive ring
  • the outer end of the positive electrode/negative electrode is located outside the heating cylinder.
  • the plurality of heating lamps are evenly distributed to form at least two sets of heating tube groups; and correspondingly, the upper conductive ring and the lower conductive ring are respectively divided to form at least two upper half rings that are not in contact with each other and at least Two lower half rings; the number of the electrode groups is consistent with the number of the heating lamp groups; the positive/negative electrodes of each of the heating lamps in each group of heating lamps are respectively associated with the group of heating lamps A corresponding upper half/lower half ring is electrically connected; the inner end of the positive electrode/negative electrode of each set of electrode groups and the upper half ring/lower half ring corresponding to the set of electrode sets are electrically connected.
  • the electric lead-in assembly further comprises: at least two upper insulating members, each upper insulating member being disposed in a gap between two adjacent upper half rings for making the adjacent two upper half
  • the ring is electrically insulated; at least two lower insulators, each of the lower insulators being disposed in a gap between the adjacent two lower half rings for electrically insulating the adjacent two lower half rings.
  • the electric lead-in assembly further includes: two conductive adapters for respectively electrically connecting the inner ends of the positive electrode and the negative electrode in the electrode group to the upper conductive ring and the lower conductive ring; Two voltage guiding plates for respectively fixing the two conductive adapters together with the positive electrode and the negative electrode in the electrode group.
  • the electric lead-in assembly further comprises: two insulating protective covers, each insulating protective cover is used for Coating the conductive adapter, the voltage guiding plate and the inner end of the electrode; two insulating sleeves are respectively sleeved on the positive electrode and the negative electrode for covering the positive electrode and the negative electrode a portion located inside the heating cylinder and a portion embedded inside the heating cylinder.
  • the heating lamp tube is a strip-shaped lamp tube
  • the length direction of the strip-shaped lamp tube is parallel to the axial direction of the heating cylinder body
  • a plurality of the strip-shaped lamp tubes are along the heating cylinder body Arranged in a circumferential direction.
  • the support assembly further comprises an upper ring outer casing, a lower ring outer casing and an outer ring connecting member, all of which are made of an insulating material.
  • the upper ring outer casing is disposed outside the inner inner ring;
  • the lower ring outer casing is disposed outside the lower inner ring;
  • the number of the outer ring connecting members is at least two, and
  • the circumferential spacing of the heating cylinders is arranged, and each outer ring connector is connected to the upper ring housing and the lower ring housing, respectively, and supports both.
  • the upper ring outer casing comprises at least two upper outer split bodies connected end to end, the at least two upper outer split bodies are detachably connected between the two;
  • the lower ring outer casing comprises at least two lower ends connected The outer split body, the at least two lower outer split bodies are detachably connected between the two, and the at least two upper outer split bodies are in one-to-one correspondence with the at least two lower outer split bodies.
  • the annular heating device comprises: a heating wire or a heating tube, forming a cylindrical heat source around the heating cylinder body; and an electric lead-in assembly for conducting current to the heating wire or the heating tube.
  • the heating chamber further includes a chamber door, and the cassette is replaced by opening the chamber door.
  • a cooling passage for accommodating a cooling medium is provided in the heating cylinder, and the cooling medium is used for cooling the heating cylinder.
  • the heating chamber further comprises: a temperature-controlled safety device for monitoring the temperature of the heating cylinder, and issuing an alarm signal when the temperature of the heating cylinder is higher than a preset safety threshold.
  • the invention also provides a semiconductor processing apparatus comprising a heating chamber which can employ the heating chamber provided by any of the above aspects of the invention.
  • the semiconductor processing apparatus further includes a buffer storage area located downstream of the heating chamber, and a substrate for storing the self-heating chamber and having completed the heating process in the heating chamber.
  • the invention provides a heating chamber which is provided with a heating cylinder inside thereof, an annular heating device surrounding the heating cylinder body, can carry a plurality of substrates and axially space the multilayer substrate along the heating cylinder
  • the arranged cassette, and the cassette lifting device for driving the cassette to rise into the internal space defined by the annular heating device or descending to the position corresponding to the transfer opening, can realize a single pair in the vertical direction
  • the multilayer substrates arranged at intervals are simultaneously heated to multiply the number of substrates processed per unit time, thereby increasing the throughput of the semiconductor processing equipment.
  • annular heating device radiates heat from the periphery of the film cassette toward the respective substrates, it is easier to ensure temperature uniformity between the respective regions of the substrate and between the substrates as compared with the prior art, thereby improving Process uniformity.
  • the semiconductor processing apparatus provided by the present invention can realize not only simultaneous heating of a plurality of substrates arranged in a vertical direction at a time, but also multiplying the unit time by using the above-mentioned heating chamber provided by the present invention.
  • the number of substrates is processed internally, and it is easier to ensure temperature uniformity between regions of the substrate and between the substrates, thereby improving process uniformity.
  • FIG. 1 is a schematic structural view of a conventional heating chamber
  • FIG. 2A is a cross-sectional view of a heating chamber according to an embodiment of the present invention.
  • FIG. 2B is an exploded perspective view of a heating chamber according to an embodiment of the present invention.
  • 3A is a half cross-sectional view of a heating chamber according to an embodiment of the present invention.
  • 3B is a schematic view showing a distribution of a heating lamp tube used in a heating chamber according to an embodiment of the present invention
  • Figure 3C is an enlarged view of the area I in Figure 3A;
  • FIG. 4A is an exploded perspective view showing a support assembly used in a heating chamber according to an embodiment of the present invention
  • Figure 4B is an enlarged view of the area II in Figure 4A;
  • FIG. 4C is a cross-sectional view of the upper conductive ring employed in the support assembly of FIG. 4A;
  • Figure 5 is a cross-sectional view of a heating chamber provided in accordance with a variation of an embodiment of the present invention.
  • FIG. 2A is a cross-sectional view of a heating chamber provided by an embodiment of the present invention.
  • 2B is an exploded perspective view of a heating chamber according to an embodiment of the present invention.
  • the heating chamber 100 is defined by the chamber assembly 101 and is a vacuum environment.
  • the heating chamber 100 includes a heating cylinder 17, an annular heating device 15, a cassette 14 and a cassette lifting device 13, and a transfer port 121 is disposed on the chamber assembly 101 and below the heating cylinder 17. It is used to pass the substrate 12.
  • the heating cylinder 17 is disposed in the heating chamber 100 and located above the film opening 121.
  • the annular heating device 15 is disposed around the heating cylinder 17 for radiating heat from the periphery of the heating cylinder 17 to the inside. It will be readily understood that the interior space defined by the heating cylinder 17 serves as a process environment for heating the substrate 12, and is also a vacuum environment.
  • the cassette 14 is used to carry the multilayer substrate 12, and the multilayer substrates 12 are arranged in the axial direction of the heating cylinder 17 (direction perpendicular to the surface of the substrate 12).
  • the specific structure of the cassette 14 is as shown in FIG. 2B.
  • the cassette 14 is composed of a top plate, a bottom plate and a plurality of columns, wherein a plurality of notches are arranged on the column along the axial direction of the heating cylinder 17 for supporting Substrate 12.
  • the cassette lifting device 13 is used for driving the cassette 14 for lifting movement. Under the driving of the lifting device 13, the cassette 14 can be lifted into the inner space of the heating cylinder 17 via the bottom end opening of the heating cylinder 17, and the ring heating is performed at this time.
  • the device 15 surrounds the cassette 14 so that heat can be radiated toward the respective substrates within the cassette 14.
  • the cassette 14 has a bottom plate
  • the bottom end opening of the heating cylinder 17 can be closed when the cassette 14 is lifted into the inner space of the heating cylinder 17, thereby heating
  • the internal space of the cylinder 17 forms a relative A closed, independent environment that prevents external space from interfering with the temperature distribution of the independent environment.
  • the outer diameter of the bottom plate of the film cassette 14 it should be ensured that the film cassette 14 can smoothly move up and down with respect to the heating cylinder body 17, even if there is a gap between the bottom plate of the film cassette 14 and the bottom end opening of the heating cylinder body 17.
  • the influence of the gap on the uniformity of the temperature distribution of the internal space of the heating cylinder 17 is also small and negligible.
  • the cassette 14 can be lowered from the inner space of the heating cylinder 17 to the position corresponding to the transfer opening 121 via the bottom end opening of the heating cylinder 17, and by the regulating cassette 14 With respect to the height of the film opening 121, the respective substrates 12 at different heights can be transported one by one to the same height as the film opening 121, moved into the heating chamber 100 by the robot through the film opening 121, and taken out and transmitted.
  • the substrate 12 is at the same height position of the substrate 121.
  • the cassette 14 is driven by the cassette lifting device 13 for lifting movement so that one of the notches on each of the columns of the cassette 14 is moved to the same height as the transfer opening 121, and is utilized.
  • the robot transfers the substrate 12 into the heating chamber 100 via the transfer opening 121, and is placed in a notch at the same height as the transfer opening 121, and the above operation is repeated until all the notches are loaded with the substrate 12 .
  • the cassette 14 is driven by the cassette lifting device 13 to ascend to the inner space of the heating cylinder 17, as in the position of the cassette 14 in Fig. 2A, and then the annular heating device 15 is opened so that the multilayer substrate 12 is simultaneously Heat up.
  • the annular heating device 15 is closed, and the cassette lifting device 13 is used to drive the cassette 14 down to a position corresponding to the transfer opening 121, and by adjusting the height of the cassette 14 relative to the transfer opening 121, A substrate 12 is moved to the same height as the film opening 121, and then moved into the heating chamber 100 by the robot through the film opening 121, and the substrate 12 at the same height as the film opening 121 is taken out. The above operation is repeated until all or all of the substrates 12 in the cassette 14 are taken out.
  • a portion of the substrate may be removed from the heating chamber as the case may be, or It is also possible to remove all of the substrates.
  • the next step of all the substrates cannot be performed at one time.
  • the waiting substrate can be subjected to a constant temperature treatment to ensure that the substrate heated in the same batch can satisfy the consistency of the process results.
  • the principle of “first in, first out” should be followed, that is, the substrate that first enters the heating chamber should be the most It is first removed for the next step.
  • the substrates heated in the same batch may have different waiting times for waiting for the next step due to different time of removal from the heating chamber (if the constant temperature is used, the constant temperature time is different), but experiments show that the waiting time is different. It has little effect on the process results of the substrate and thus does not affect the consistency of the process results.
  • the process time of the heating chamber provided by the embodiment of the present invention is not shortened or even extended, that is, the waiting time for the substrate to wait for the next step is increased, but from the perspective of the total process time. It can be seen that since the heating chamber is capable of processing a multilayer substrate at the same time, the process efficiency is doubled as compared with the prior art.
  • each substrate can be one substrate or several substrates carried by one tray
  • the multi-layer substrate (each substrate, which may be one substrate or several substrates carried by one tray) is simultaneously heated, so that the number of substrates supplied to the next process per unit time can be The increase is multiplied, which in turn can solve the problem that the degassing step restricts the productivity of the entire semiconductor processing equipment.
  • the annular heating device 15 includes a plurality of heating lamps 41 and a supporting assembly. 23 and electrical introduction components.
  • each of the heating lamps 41 is a strip-shaped tube, and the longitudinal direction of the strip-shaped tube is parallel to the axial direction of the heating cylinder 17, and
  • the strip-shaped lamps are arranged along the circumferential direction of the heating cylinder 17 to form a cylindrical heat source around the inside of the heating cylinder 17, which easily ensures temperature uniformity between the substrates and between the respective regions of the substrate. .
  • temperature uniformity between the regions of the substrate can be ensured as long as there is sufficient time to complete the heat transfer in the sheet.
  • the support assembly 23 is for fixedly connecting the plurality of heating lamps 41 to the heating cylinder 17.
  • the support assembly 23 includes an upper inner ring 39, a lower inner ring 31, and an inner ring connecting member 38, all of which are made of an insulating material (for example, ceramic), wherein the upper inner ring 39 and the lower inner ring 31 are in the heating cylinder. 17 are disposed opposite each other in the axial direction, and each of the heating lamps 41 is located between the upper inner ring 39 and the lower inner ring 31, and is fixedly connected to the two by the lamp fixing member 42, as shown in Figs. 4A and 4B.
  • the upper inner ring 39 is fixedly connected to the top of the heating cylinder 17 by means of four fixing members 40.
  • the number of the inner ring connectors 38 is plural and arranged along the circumferential direction of the heating cylinder 17; each inner ring connecting member 38 is connected to the upper inner ring 39 and the lower inner ring 31, respectively, and supports both. That is, the inner ring connecting member 38 functions as a strut between the upper inner ring 39 and the lower inner ring 31, so that the upper inner ring 39, the lower inner ring 31 and the inner ring connecting member 38 are formed to support the plurality of heating lamps 41. Ring architecture. The arrangement of the inner ring connecting members 38 should avoid blocking the heating lamp tube 41 on the premise of stably supporting the upper inner ring 39 and the lower inner ring 31.
  • the axial spacing between the upper inner ring 39 and the lower inner ring 31 should be greater than the axial length of the cassette 14 to provide access to the cassette when the cassette 14 is positioned within the interior space defined by the annular heating means 15.
  • the substrate 12 of the ceiling and the bottom plate 14 can be located between the upper inner ring 39 and the lower inner ring 31, and can be heated to a position where the heating tube 41 is radiated, that is, all the substrates 12 are enveloped in the heating tube. 41 in the radiation area, thereby ensuring temperature uniformity between the substrates 12,
  • the electric lead-in assembly is for conducting current to the respective heating lamps 41 to illuminate the heating lamps 41.
  • the electrical lead-in assembly includes an upper conductive ring 44, a lower conductive ring 33, and an electrode set.
  • the upper conductive ring 44 is disposed around the outer side of the upper inner ring 39
  • the lower conductive ring 33 is disposed around the outer side of the lower inner ring 31.
  • the positive/negative electrodes of the respective heating lamps 41 are electrically connected to the upper conductive ring 44/lower conductive ring 33, respectively; the electrode group includes a positive electrode and a negative electrode, and the inner end of the positive electrode/negative electrode (at the inner end of the heating cylinder 17) They are electrically connected to the upper conductive ring 44/lower conductive ring 33, respectively, and the outer end of the positive electrode/negative electrode (at the outer end of the heating cylinder 17) is located outside the heating cylinder 17 for connection with a power source. It can be seen that the electrode group is used to introduce the current supplied by the power source and is simultaneously conducted to the respective heating lamps 41 through the upper conductive ring 44/lower conductive ring 33.
  • the upper conductive ring 44 and the lower conductive ring 33 correspond to the positive lead and the negative lead common to all the heating lamps 41, respectively, and the respective heating lamps 41, the upper conductive ring 44 and the lower conductive ring 33, the electrode group and the power source are formed.
  • Conductive loop
  • the heating lamp tube 41 can be distributed independently of each other.
  • a lamp tube group, and the upper conductive ring and the lower conductive ring are correspondingly divided into a plurality of upper half rings and a plurality of lower half rings, the upper half rings are not in contact with each other, and the lower half rings are not in contact with each other, and
  • the positive electrode/negative electrode of each heating lamp tube 41 in each group of heating lamp tubes is electrically connected to the upper half ring/lower half ring corresponding to the group of heating lamp tubes respectively; meanwhile, the number of electrode groups and the heating lamp
  • the number of tube groups is the same, and the inner ends of the positive electrode/negative electrode of each group of electrodes are electrically connected to the upper half ring/lower half ring corresponding to the group of electrode groups.
  • each group of heating lamps forms a conductive loop through the corresponding upper and lower halves and the electrode group and the same power source. Therefore, multiple sets of heating lamps form separate conductive circuits from different power sources. Therefore, the number of the heating lamps 41 connected to each of the power sources can be reduced, and the problem that the radiation intensity of the heating lamps 41 is insufficient due to insufficient power supply of the power source can be avoided.
  • the plurality of heating lamps 41 are equally distributed into two groups. Heat the tube set.
  • the upper conductive ring 44 is composed of spaced first and second upper half rings (44A, 44B) as shown in FIG. 4C; the lower conductive ring 33 is similar in structure to the first, spaced apart by the first
  • the second lower half ring (33A, 33B) is composed, as shown in FIG. 4B.
  • first upper half ring 44A and the first lower half ring 33A are opposite to each other, and the second upper half ring 44B and the second lower half ring 33B are opposite to each other; and, wherein each of the heating lamps 10 in the group of heating lamps Evenly arranged between the first upper half ring 44A and the first lower half ring 33A; wherein each of the other heating lamp tubes 41 in the other set of heating lamp tubes is evenly arranged in the second upper half ring 44B and the second lower half Between rings 33B. Further, the positive electrode/negative electrode of each of the heating lamps 41 is electrically connected to the upper half ring/lower half ring opposite thereto.
  • the electrode group is two groups. As shown in FIG.
  • the first group electrode group 19A is located on the left side of the heating cylinder 17, and the second group electrode group 19B is located on the right side of the heating cylinder 17.
  • the inner ends of the positive electrode/negative electrode in the first group electrode group 19A are electrically connected to the first upper half ring 44A/first lower half ring 33A, respectively; the positive electrode/negative electrode in the second group electrode group 19B The inner ends are electrically connected to the second upper half ring 44B/second lower half ring 33B, respectively.
  • the two sets of heating tube groups form two mutually independent conductive loops with different power sources.
  • the electric lead-in assembly further comprises at least two upper insulating members and at least two lower insulating members, wherein each upper insulating member is disposed in a gap between the adjacent two upper half rings for making the phase
  • the two upper half rings of the adjacent ones are electrically insulated; each of the lower insulating members is disposed in a gap between the adjacent two lower half rings for electrically insulating the adjacent two lower half rings, thereby It is further ensured that there is no electrical conduction between two adjacent upper half rings (or lower half rings).
  • the electric lead-in assembly includes four insulating members 43, two of which serve as the upper insulating member and the other two serve as the lower insulating member.
  • two upper insulating members are respectively disposed in two gaps between the first and second upper half rings (44A, 44B) for electrically connecting the first and second upper half rings (44A, 44B) Insulation, as shown in FIG. 4C;
  • two lower insulating members are respectively disposed in two gaps between the first and second lower half rings (33A, 33B) for making the first and second lower half rings (33A) , 33B) is electrically insulated, as shown in Figure 4B.
  • the electrical lead-in assembly further includes two conductive adapters. 27 and two voltage guiding plates 28.
  • the two conductive adapters 27 are used to electrically connect the inner ends of the positive electrode/negative electrode in the electrode group to the upper conductive ring 44/lower conductive ring 33, respectively. It is easy to understand that, in consideration of processing and mounting, it is difficult to arrange the electrode group at a position close to the top and bottom of the heating cylinder 17, and the inner end of the positive electrode/negative electrode is directly connected to the upper conductive ring 44/lower conductive ring 33. Contact.
  • the electrical connection between the inner end of the positive/negative electrode and the upper conductive ring 44/lower conductive ring 33 can be achieved by means of the conductive adapter 27.
  • a conductive connecting member 30 may be further added to electrically connect each of the conductive adapters 27 and the upper conductive ring 44 (or the lower conductive ring 33). connection.
  • Two voltage guiding plates 28 are used to respectively fix the two conductive adapters 27 to the positive and negative electrodes in the electrode group.
  • the electrical lead-in assembly further includes two insulating shields and two insulating sleeves 29.
  • each of the insulating protective covers is provided as two separate bodies (25, 26) capable of forming a cavity structure and detachably connected to facilitate disassembly; each insulating protective cover is coated on the conductive adapter 27, The voltage plate 28 and the inner end of the positive electrode (or negative electrode) of the electrode group; two insulating sleeves 29 are respectively sleeved on the positive electrode and the negative electrode of the electrode group for covering the heating of the positive electrode and the negative electrode a portion inside the cylindrical body 17 and a portion embedded inside the heating cylinder 17, that is, a portion of the positive electrode (or negative electrode) located inside the heating cylinder 17 is coated to the conductive portion of the opposite electrode group Protect from vacuum fires.
  • the present invention is not particularly limited in the structure of the insulating protective cover and the insulating sleeve as long as the two can cover the conductive portion and the electrical connection portion of the electric
  • the support assembly 23 further includes an upper ring outer casing, a lower ring outer casing and an outer ring connecting member 35, all of which are made of an insulating material.
  • the upper ring outer casing is disposed outside the upper inner ring 39 for forming a cavity with the upper inner ring 39 to accommodate the respective components connected to the upper inner ring 39, for example, heating the positive electrode of the lamp 41/ The negative electrode and the lamp holder 42, the portion where the conductive connection member 30 is connected to the upper conductive ring/lower conductive ring, and the like.
  • the lower ring housing is placed under The outside of the inner ring 31 is placed to accommodate the various components attached to the lower inner ring 31 therein.
  • the number of outer ring connectors 35 is at least two and are spaced apart in the circumferential direction of the heating cylinder 17, and each outer ring connector 35 is connected to the upper ring casing and the lower ring casing, respectively, and supports both.
  • the replacement frequency is high, so that the upper ring outer casing may include at least two upper outer split bodies in consideration of the convenience of disassembly and assembly, and the at least two upper outer split bodies may be sequentially Disassemblingly connecting; the lower ring housing may include at least two lower outer splits, the at least two upper outer splits being detachably connected in sequence, and at least two upper outer splits and at least two lower outer splits being one by one correspond.
  • the upper ring outer casing is composed of four upper outer split bodies
  • the lower outer ring outer casing is composed of four lower outer split bodies, that is, the upper ring outer casing is equally divided into four quarter-circle bodies
  • the lower The ring housing is equally divided into four quarter-circle bodies
  • Figure 4A schematically shows two of the 1/4 ring bodies (34, 37) of the upper ring housing and two of the lower ring housings. Ring body (32, 36).
  • the individual heating lamp tubes 41 are damaged, it is only necessary to disassemble the 1/4 ring body at the position corresponding to the heating of the lamp tubes 41, so that the convenience of disassembly and assembly of the heating lamp tubes 41 can be improved, and the heating chamber 100 is facilitated. Repair and maintenance. It is easy to understand that, at the time of loading and unloading, the two quarter-ring bodies of the upper ring casing and the lower ring casing and the at least one outer ring connecting member 35 connected thereto can be integrally attached and detached.
  • the heating chamber 100 provided by the embodiment of the present invention may further include: a chamber door 16 disposed on the chamber assembly 101, and the cassette 14 may be replaced by opening the chamber door 16.
  • the chamber door may be utilized. 16 The cassettes loaded with substrates of different sizes are replaced, so that the application range of the heating chamber 100 can be expanded.
  • the heating chamber 100 further includes cooling disposed in the heating cylinder 17.
  • the passage 18 cools the heating cylinder 17 by passing cooling water into the cooling passage 18.
  • the cooling passage 18 has an inlet and an outlet (not shown) which are respectively connected to the two water joints 21 for inputting/outputting the cooling water. Forming a circulating cooling.
  • the heating chamber 100 further includes a temperature-controlled safety device 20 for monitoring the temperature of the heating cylinder 17 and issuing an alarm signal when the temperature of the heating cylinder 17 is above a predetermined safety threshold.
  • a handle 45 is further disposed on the outer wall of the heating cylinder 17 to facilitate the mounting, dismounting or transportation of the heating cylinder 17.
  • a guard ring 46 is further disposed at the bottom of the heating cylinder 17 for protecting the annular heating device 15.
  • the heating lamp tube 41 is a strip-shaped lamp tube, but the present invention is not limited thereto. In practical applications, the heating lamp tube 41 may also be a spiral lamp tube or a ring lamp. Other arbitrary shapes of tubes and the like, and for the heating lamps 41 of different shapes, the arrangement of the heating lamps 41 and the electrical connection manner are adaptively designed to ensure the areas between the substrates 12 and the substrates 12. Temperature uniformity. It is easy to understand that the structure of the support assembly 23 and the electric lead-in assembly are designed to match the heating lamp tube 41. Therefore, the support assembly 23 and the electric lead-in assembly are not limited to the above-described structure provided by the embodiment, and should be based on the heating lamp 41. The arrangement of the arrangement and the change of the electrical connection method are adaptively designed.
  • the plurality of columns of the cassette 14 are arranged on the basis of ensuring the stable support of the substrate 12, and the substrate 14 is also required to move the substrate 12 out of the cassette.
  • the opening of the opening 14 is opposed to the film opening to ensure that the substrate 12 can be sequentially removed from the opening and the film opening of the film cassette 14.
  • the arrangement of the plurality of columns also requires consideration of the layout of the heating lamps 41 to avoid blocking the light radiated from the heating lamps 41.
  • the invention also provides a heating chamber as shown in Fig. 5.
  • the heating chamber 200 provided by the present modified embodiment also includes a heating cylinder 17, an annular heating device, a cassette 14 and a cassette lifting device 13 as compared with the above embodiment. Since the structure and function of the above components or devices are the same as those of the above embodiments, they are not described herein again. Only the differences between the heating chamber 200 provided by the present modified embodiment and the above embodiment will be described in detail below.
  • the annular heating device includes a heating wire (or heating tube) 50 which is spirally wound along the circumferential direction of the heating cylinder 17 to form a cylindrical heat source for self-heating the cylinder
  • the periphery of the body 17 radiates heat to the inside so that heat can be radiated toward the respective substrates 12 in the cassette 14 at the same time.
  • the inner wall of the tubular structure formed by winding the heating wire (or heating tube) 50 should be as close as possible to the cassette 14, but at the same time it cannot hinder the cassette 14. Lifting movement.
  • the heating wire (or heating tube) 50 is spirally wound along the circumferential direction of the heating cylinder 17 to form a cylindrical heat source, but the present invention is not limited thereto. In practical applications, the heating wire The (or heating tube) 50 may be wound in any other manner as long as a cylindrical heat source is formed around the inside of the heating cylinder 17 so as to be able to radiate heat uniformly toward the inside thereof.
  • the number of heating wires (or heating tubes) 50 may be one, that is, a heating wire (or heating tube) is wound to form a cylindrical structure, or the number of heating wires (or heating tubes) 50 may also be Two or more, two or more heating wires (or heating pipes) may be electrically connected or independent of each other, and uniformly arranged inside the heating cylinder 17 to form a cylindrical heat source.
  • the present invention also provides a semiconductor processing apparatus including a heating chamber which can employ the heating chamber provided by the above embodiments of the present invention.
  • the semiconductor processing apparatus includes a buffer storage region that can be located downstream of the heating chamber for storing the substrate that has heated the chamber and that has completed the heating process within the heating chamber.
  • a buffer storage region that can be located downstream of the heating chamber for storing the substrate that has heated the chamber and that has completed the heating process within the heating chamber.
  • the semiconductor processing apparatus provided by the embodiment of the present invention by using the heating chamber provided by any of the above embodiments of the present invention, can simultaneously realize heating of a plurality of substrates arranged at intervals in a vertical direction at a time.
  • the number of substrates to be processed per unit time is multiplied, and the temperature uniformity between the regions of the substrate and between the substrates is more easily ensured, thereby improving process uniformity.

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Abstract

一种加热腔室以及半导体加工设备。该加热腔室包括加热筒体（17），设置在加热腔室内，且位于传片口的上方；环形加热装置（15），环绕设置在加热筒体内侧，用以自加热筒体的周围向内部辐射热量；片盒（14），用于承载多层基片，且使多层基片沿加热筒体的轴向间隔排布；片盒升降装置（13），用于驱动片盒上升至由环形加热装置限定的内部空间内，或者下降至与传片口相对应的位置处。该加热腔室其不仅可以实现单次对在竖直方向上间隔排布的多层基片同时进行加热，从而成倍地增加单位时间内加工基片的数量，而且更容易保证基片各区域之间以及各基片间的温度均匀性，从而可以提高工艺均匀性。

Description

加热腔室以及半导体加工设备 技术领域
本发明涉及半导体设备制造领域，具体地，涉及一种加热腔室以及半导体加工设备。
背景技术
物理气相沉积(Physical Vapor Deposition，以下简称PVD)技术是微电子领域常用的加工技术，如，用于加工集成电路中的铜互连层。制作铜互连层主要包括去气、预清洗、Ta(N)沉积以及Cu沉积等步骤，其中，去气步骤是去除基片等被加工工件上的水蒸气及其它易挥发性杂质。在实施去气步骤时，需要利用加热腔室将基片等被加工工件加热至300℃以上。
图1为现有的加热腔室的结构示意图。请参阅图1，加热腔室包括桶状的屏蔽件3和设置在其顶部的反射板2，且在该加热腔室的内部设置有密封石英窗9，借助密封石英窗9将加热腔室分隔为上子腔室和下子腔室，上子腔室为大气环境，下子腔室为真空环境。其中，在下子腔室内的底部设有用于承载基片4的支撑针10；在上子腔室内设置有加热灯泡6，加热灯泡6通过灯泡安装座7固定在灯泡安装板1上，且位于反射板2的下方，用以通过热辐射方式透过密封石英窗9对基片4进行加热。另外，在屏蔽件3上还设置有传片口11，用于供基片4传入或传出加热腔室。
上述加热腔室在实际应用中不可避免地存在以下问题：
其一，由于加热灯泡6离散配置，因而加热灯泡6向基片4的各区域辐射的热量不均匀，导致基片4各个区域的温度不均，从而造成工艺不均匀。而且，在加热基片4的过程中，由于基片4边缘区域更靠近屏 蔽件3，因而其热散失速率高于基片4中心区域的热散失速率，导致基片4的中心区域与边缘区域存在温差，进一步降低了工艺均匀性。
其二，由于目前上述加热腔室单次仅能对有限的几个基片进行去气操作，且用时较长(接近200秒，其用时是诸如铜阻挡层工艺等工艺过程的4倍)，因而单位时间内能加工的基片的数量较少，且其工艺时间在某些PVD工艺的总工艺时间中所占比例最大，这使得去气步骤成为了制约整套PVD设备产能的关键因素。因此，目前亟需一种高效率的加热腔室，以提高PVD设备的产能。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种加热腔室以及半导体加工设备，其不仅可以实现单次对在竖直方向上间隔排布的多层基片同时进行加热，以成倍地增加单位时间内加工基片的数量，而且更容易保证基片各区域之间以及各基片间的温度均匀性，从而可以提高工艺均匀性。
为实现本发明的目的而提供一种加热腔室，其为真空环境，且具有可供基片通过的传片口。所述加热腔室包括：加热筒体，设置在所述加热腔室内，且位于所述传片口的上方；环形加热装置，与所述加热筒体固定连接，环绕设置在所述加热筒体内侧，用以自所述加热筒体的周围向内部辐射热量；片盒，用于承载多层基片，且使所述多层基片沿所述加热筒体的轴向间隔排布；片盒升降装置，用于驱动所述片盒上升至由所述环形加热装置限定的内部空间内，或者下降至与所述传片口相对应的位置处。
其中，所述环形加热装置包括：多个加热灯管，沿所述加热筒体的周向环绕形成筒状热源；支撑组件，用于固定所述多个加热灯管；电引入组件，用于将电流传导至各个加热灯管。
其中，所述支撑组件包括上层内环、下层内环和内环连接件，三者均采 用绝缘材料制作。其中，所述上层内环和下层内环在所述加热筒体的轴向上相对设置，每个加热灯管位于所述上层内环和下层内环之间，且分别与二者固定连接；所述内环连接件的数量为多个，且沿所述加热筒体的周向间隔设置；每个内环连接件分别与所述上层内环和下层内环连接，且对二者进行支撑。
其中，所述电引入组件包括上导电环、下导电环和电极组。其中，所述上导电环环绕设置在所述上层内环的外侧，所述下导电环环绕设置在所述下层内环的外侧；每个加热灯管的正极/负极分别与所述上导电环/下导电环电连接；所述电极组包括正电极和负电极，所述正电极/负电极的内端通过所述上导电环/下导电环同时与各个加热灯管的正极/负极对应连接，所述正电极/负电极的外端位于所述加热筒体的外部。
其中，所述多个加热灯管被平均分配形成至少两组加热灯管组；并对应地，所述上导电环和下导电环分别被分割形成不相接触的至少两个上半环和至少两个下半环；所述电极组的数量与所述加热灯管组的数量一致；每组加热灯管组中的每个加热灯管的正极/负极分别和与该组加热灯管组一一对应的上半环/下半环电连接；每组电极组的正电极/负电极的内端和与该组电极组一一对应的上半环/下半环电连接。
其中，所述电引入组件还包括：至少两个上绝缘件，每个上绝缘件设置在相邻的两个上半环之间的间隙内，用以使所述相邻的两个上半环电绝缘；至少两个下绝缘件，每个下绝缘件设置在相邻的两个下半环之间的间隙内，用以使所述相邻的两个下半环之间电绝缘。
其中，所述电引入组件还包括：两个导电转接件，用于分别将所述电极组中的正电极和负电极的内端对应地与所述上导电环和下导电环电连接；两个导电压板，用于分别将所述两个导电转接件对应地与所述电极组中的正电极和负电极固定在一起。
其中，所述电引入组件还包括：两个绝缘保护罩，每个绝缘保护罩用于 包覆所述导电转接件、导电压板以及所述电极的内端；两个绝缘套管，分别套制在所述正电极和负电极上，用以包覆所述正电极和负电极的位于所述加热筒体内侧的部分以及内嵌在所述加热筒体内部的部分。
其中，所述加热灯管为条状灯管，所述条状灯管的长度方向与所述加热筒体的轴向相互平行，且多个所述条状灯管沿所述加热筒体的周向间隔排布。
其中，所述支撑组件还包括上环外壳、下环外壳和外环连接件，三者均采用绝缘材料制作。其中，所述上环外壳罩设在所述上层内环的外部；所述下环外壳罩设在所述下层内环的外部；所述外环连接件的数量为至少两个，且沿所述加热筒体的周向间隔设置，每个外环连接件分别与所述上环外壳和下环外壳连接，且对二者进行支撑。
其中，所述上环外壳包括首尾连接的至少两个上外分体，所述至少两个上外分体两两之间可拆卸地连接；所述下环外壳包括首尾连接的至少两个下外分体，所述至少两个下外分体两两之间可拆卸地连接，并且所述至少两个上外分体与所述至少两个下外分体一一对应。
其中，所述环形加热装置包括：加热丝或加热管，在所述加热筒体的内侧环绕形成筒状热源；电引入组件，用于将电流传导至所述加热丝或加热管。
其中，所述加热腔室还包括腔门，通过开启所述腔门来更换所述片盒。
其中，在所述加热筒体内还设置有用于容纳冷却介质的冷却通道，所述冷却介质用于冷却所述加热筒体。
其中，所述加热腔室还包括：温控安全装置，用于监测所述加热筒体的温度，并在所述加热筒体的温度高于预设的安全阈值时发出报警信号。
作为本发明的另一个方面，本发明还提供一种半导体加工设备，其包括加热腔室，该加热腔室可以采用本发明上述任意方案提供的加热腔室。
其中，该半导体加工设备还包括位于加热腔室下游的缓冲存储区，用于存储自来加热腔室且已在加热腔室内完成加热工艺的基片。
本发明具有以下有益效果：
本发明提供的加热腔室，其通过在其内部设置加热筒体、环绕在该加热筒体内侧的环形加热装置、可承载多层基片且使多层基片沿加热筒体的轴向间隔排布的片盒、以及用于驱动该片盒上升至由环形加热装置限定的内部空间内或者下降至与传片口相对应的位置处的片盒升降装置，可以实现单次对在竖直方向上间隔排布的多层基片同时进行加热，从而成倍地增加单位时间内加工基片的数量，进而可以提高半导体加工设备的产能。此外，由于环形加热装置是自片盒的外围同时朝向各个基片辐射热量，这与现有技术相比，更容易保证基片各区域之间以及各基片间的温度均匀性，从而可以提高工艺均匀性。
本发明提供的半导体加工设备，其通过采用本发明提供的上述加热腔室，不仅可以实现单次对在竖直方向上间隔排布的多层基片同时进行加热，以成倍地增加单位时间内加工基片的数量，而且更容易保证基片各区域之间以及各基片间的温度均匀性，从而可以提高工艺均匀性。
附图说明
图1为现有的加热腔室的结构示意图；
图2A为本发明实施例提供的加热腔室的剖视图；
图2B为本发明实施例提供的加热腔室的分解示意图；
图3A为本发明实施例提供的加热腔室的半剖图；
图3B为本发明实施例提供的加热腔室所采用的加热灯管的分布示意图；
图3C为图3A中I区域的放大图；
图4A为本发明实施例提供的加热腔室所采用的支撑组件的分解示意图；
图4B为图4A中II区域的放大图；
图4C为图4A中支撑组件所采用的上导电环的剖视图；以及
图5为本发明实施例的一个变型实施例提供的加热腔室的剖视图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的加热腔室以及半导体加工设备进行详细描述。
图2A为本发明实施例提供的加热腔室的剖视图。图2B为本发明实施例提供的加热腔室的分解示意图。请一并参阅图2A和图2B，加热腔室100其由腔室组件101限定而成，且为真空环境。而且，该加热腔室100包括加热筒体17、环形加热装置15、片盒14和片盒升降装置13，并且在腔室组件101上，且位于加热筒体17的下方设置有传片口121，用于供基片12通过。其中，加热筒体17设置在该加热腔室100内，且位于传片口121的上方；环形加热装置15环绕设置在加热筒体17内侧，用以自加热筒体17的周围向内部辐射热量。容易理解，由该加热筒体17限定而成的内部空间用于作为对基片12进行加热的工艺环境，且同样为真空环境。
片盒14用于承载多层基片12，且使多层基片12沿加热筒体17的轴向(垂直于基片12表面的方向)间隔排布。片盒14的具体结构如图2B所示，片盒14由天板、底板和多个立柱组成，其中，在立柱上沿加热筒体17的轴向间隔设置有多个槽口，用以支撑基片12。片盒升降装置13用于驱动片盒14作升降运动，在升降装置13的驱动下，片盒14可以经由加热筒体17的底端开口升入加热筒体17的内部空间，此时环形加热装置15环绕在片盒14的周围，从而可以同时朝向片盒14内的各个基片辐射热量。需要说明的是，由于片盒14具有底板，该底板通过采用合适的外径，可以在片盒14升入加热筒体17的内部空间时，封闭加热筒体17的底端开口，从而使得加热筒体17的内部空间形成相对 封闭的独立环境，进而可以避免外部空间对该独立环境温度分布的干扰。当然，在设计片盒14的底板外径时，应保证片盒14能够相对于加热筒体17顺利地进行升降运动，即使片盒14的底板与加热筒体17的底端开口之间具有间隙，该间隙对加热筒体17的内部空间的温度分布均匀性的影响也很小，可以忽略不计。
而且，在片盒升降装置13的驱动下，片盒14可以经由加热筒体17的底端开口自加热筒体17的内部空间下降至与传片口121相对应的位置处，并且通过调节片盒14相对于传片口121的高度，可以将不同高度处的各个基片12逐一传输至与传片口121相同高度的位置处，由机械手经由传片口121移入加热腔室100内，并取出位于与传片口121相同高度的位置处的基片12。
在进行工艺的过程中，首先，利用片盒升降装置13驱动片盒14作升降运动，以使得片盒14的各个立柱上其中一个槽口移动至与传片口121相同高度的位置处，并利用机械手经由传片口121将基片12传输至加热腔室100内，并放置于位于与传片口121相同高度的位置处的槽口内，重复进行上述操作，直至所有的槽口内均装载有基片12。然后，利用片盒升降装置13驱动片盒14上升至加热筒体17的内部空间，如图2A中的片盒14所在位置，然后开启环形加热装置15，以使其对多层基片12同时进行加热。待加热完成之后，关闭环形加热装置15，并利用片盒升降装置13驱动片盒14下降至与传片口121相对应的位置处，并且通过调节片盒14相对于传片口121的高度，将其中一个基片12移动至与传片口121相同高度的位置处，然后由机械手经由传片口121移入加热腔室100内，并取出位于与传片口121相同高度的位置处的基片12。重复进行上述操作，直至将片盒14内的所有基片12全部或部分取出。
在实际应用中，可以根据具体情况自加热腔室移出一部分基片，或 者也可以移出全部基片。具体来说，若进行下一步工序的设备单次加工基片的数量少于片盒中的基片数量，则在完成一次加热去气工艺之后，无法一次性地对全部基片进行下一步工序，而仅能对其中一部分基片进行下一步工序，其余基片还需停留在于片盒内或者被取出并放置于加热腔室之外的缓冲存储区内，等待进行下一步工序。优选的，可以对等待的基片进行恒温处理，以尽量保证同批进行加热的基片能够满足对工艺结果的一致性的要求。另外，为了使每个基片进行加热去气工艺的工艺时间大致相同，以保证工艺结果的一致性，应遵循“先进先出”的原则，即，最先进入加热腔室的基片应最先被移出进行下一步工序。这里，虽然同批进行加热的基片可能因移出加热腔室的时间不同，而导致等待进行下一步工序的等待时间不同(若进行恒温，则恒温时间不同)，但是实验表明，等待时间不同，对基片的工艺结果影响不大，从而不会影响工艺结果的一致性。
由上可知，本发明实施例提供的加热腔室的工艺时间虽然并未缩短，甚至还有所延长，即：增加了基片等待进行下一步工序的等待时间，但是从总工艺时间的角度来看，由于该加热腔室能够同时加工多层基片，这与现有技术相比，工艺效率成倍提高。例如，对于现有技术中单次仅能加工一层基片(每层基片，可以是一个基片，也可以是由一个托盘所承载的几个基片)的加热腔室来说，若要加工出与10层基片相对应的数量的基片，就需要进行十次加热；而对于本发明实施例提供的加热腔室来说，由于其可以对在竖直方向上间隔排布的多层基片(每层基片，可以是一个基片，也可以是由一个托盘所承载的几个基片)同时进行加热，从而可以使单位时间内提供给下一工序的基片数量成倍增加，进而可以解决去气步骤制约整个半导体加工设备的产能的问题。
下面对上述环形加热装置15的结构进行详细描述。具体地，请一并参阅图3A-图4C，环形加热装置15包括多个加热灯管41、支撑组件 23和电引入组件。其中，如图3B和图4A所示，在本实施例中，每个加热灯管41为条状灯管，该条状灯管的长度方向与加热筒体17的轴向相互平行，且多个条状灯管沿加热筒体17的周向间隔排布，以在加热筒体17的内侧环绕形成筒状热源，这很容易保证各基片间以及基片各区域之间的温度均匀性。当然，由于基片所获得的热量需要自其边缘逐渐向中心传递，因而只要有足够时间完成片内的热量传递，就可以保证基片各区域之间的温度均匀性。
支撑组件23用于将多个加热灯管41与加热筒体17固定连接。具体地，支撑组件23包括上层内环39、下层内环31和内环连接件38，三者均采用绝缘材料(例如陶瓷)制作，其中，上层内环39和下层内环31在加热筒体17的轴向上相对设置，每个加热灯管41位于上层内环39和下层内环31之间，且通过灯管固定件42分别与二者固定连接，如图4A和4B所示。而且，上层内环39借助四个固定件40与加热筒体17的顶部固定连接。内环连接件38的数量为多个，且沿加热筒体17的周向间隔设置；每个内环连接件38分别与上层内环39和下层内环31连接，且对二者进行支撑，即，内环连接件38在上层内环39和下层内环31之间起到支柱的作用，从而上层内环39、下层内环31和内环连接件38形成可支撑多个加热灯管41的环形架构。内环连接件38的排布应在稳定支撑上层内环39和下层内环31的前提下，避免遮挡加热灯管41。
优选的，上层内环39和下层内环31之间的轴向间距应大于片盒14的轴向长度，以在片盒14位于由环形加热装置15限定的内部空间内时，使得靠近片盒14的天板和底板的基片12能够位于上层内环39和下层内环31之间，能够被加热灯管41辐射到的位置，即，使得全部的基片12均被笼罩在加热灯管41的辐射区域内，从而可以保证各基片12间的温度均匀性，
电引入组件用于将电流传导至各个加热灯管41，以点亮加热灯管41。具体地，电引入组件包括上导电环44、下导电环33和电极组。其中，上导电环44环绕设置在上层内环39的外侧，下导电环33环绕设置在下层内环31的外侧。各个加热灯管41的正极/负极分别与上导电环44/下导电环33电连接；电极组包括正电极和负电极，正电极/负电极的内端(位于加热筒体17的内侧一端)分别与上导电环44/下导电环33电连接，正电极/负电极的外端(位于加热筒体17的外侧一端)位于加热筒体17的外部，用于与电源连接。由此可知，电极组用于引入由电源提供的电流，并通过上导电环44/下导电环33同时传导至各个加热灯管41。也就是说，上导电环44和下导电环33分别相当于所有加热灯管41共用的正极引线和负极引线，各个加热灯管41、上导电环44和下导电环33、电极组与电源形成导电回路。
优选的，为了避免因加热灯管41的数量过多，而造成电源功率供应不足，从而造成加热灯管41的辐射强度不够的问题，可以将加热灯管41分配成相互独立的至少两组加热灯管组，并将上导电环和下导电环对应地分割为多个上半环和多个下半环，各个上半环之间不相接触，各个下半环之间不相接触，并且每组加热灯管组中的每个加热灯管41的正极/负极分别和与该组加热灯管组一一对应的上半环/下半环电连接；同时，电极组的数量与加热灯管组的数量一致，每组电极组的正电极/负电极的内端和与该组电极组一一对应的上半环/下半环电连接。总而言之，每组加热灯管组通过相应的上半环和下半环以及电极组与同一电源形成一个导电回路，因此，多组加热灯管组则与不同的电源形成相互独立的多个导电回路，从而可以减少与每个电源相连的加热灯管41的数量，进而可以避免因电源功率供应不足，而造成加热灯管41的辐射强度不够的问题。
进一步来说，在本实施例中，多个加热灯管41被平均分配成两组 加热灯管组。与之相对应地，上导电环44由间隔设置的第一、第二上半环(44A，44B)组成，如图4C所示；下导电环33与其结构相类似，由间隔设置的第一、第二下半环(33A，33B)组成，如图4B所示。其中，第一上半环44A与第一下半环33A彼此相对，第二上半环44B与第二下半环33B彼此相对；并且，其中一组加热灯管组中的各个加热灯管41均匀排布在第一上半环44A与第一下半环33A之间；其中另一组加热灯管组中的各个加热灯管41均匀排布在第二上半环44B与第二下半环33B之间。并且，每个加热灯管41的正极/负极分别和与之相对的上半环/下半环电连接。电极组为两组，如图3A所示，第一组电极组19A位于加热筒体17的左侧；第二组电极组19B位于加热筒体17的右侧。其中，第一组电极组19A中的正电极/负电极的内端分别与第一上半环44A/第一下半环33A电连接；第二组电极组19B中的正电极/负电极的内端分别与第二上半环44B/第二下半环33B电连接。由此，两组加热灯管组与不同的电源形成相互独立的两个导电回路。
优选的，电引入组件还包括至少两个上绝缘件和至少两个下绝缘件，其中，每个上绝缘件设置在相邻的两个上半环之间的间隙内，用以使该相邻的两个上半环电绝缘；每个下绝缘件设置在相邻的两个下半环之间的间隙内，用以使该相邻的两个下半环之间电绝缘，从而可以进一步保证相邻两个上半环(或下半环)之间不会电导通。在本实施例中，电引入组件包括四个绝缘件43，其中两个用作上绝缘件，其余两个用作下绝缘件。其中，两个上绝缘件分别设置在第一、第二上半环(44A，44B)之间的两个间隙内，用以使第一、第二上半环(44A，44B)之间电绝缘，如图4C所示；两个下绝缘件分别设置在第一、第二下半环(33A，33B)之间的两个间隙内，用以使第一、第二下半环(33A，33B)之间电绝缘，如图4B所示。
在本实施例中，如图3C所示，电引入组件还包括两个导电转接件 27和两个导电压板28。其中，两个导电转接件27用于分别将电极组中的正电极/负电极的内端对应地与上导电环44/下导电环33电连接。容易理解，考虑到加工和安装，电极组很难设置在靠近加热筒体17的顶部和底部的位置处，并使其正电极/负电极的内端直接与上导电环44/下导电环33相接触。在这种情况下，可以借助导电转接件27来实现正电极/负电极的内端与上导电环44/下导电环33之间的电连接。此外，若电极组与导电环之间的轴向间距较长，还可以进一步加设导电连接件30，用以使每个导电转接件27与上导电环44(或下导电环33)电连接。两个导电压板28用于分别将两个导电转接件27对应地与电极组中的正电极和负电极固定在一起。
优选的，电引入组件还包括两个绝缘保护罩和两个绝缘套管29。其中，每个绝缘保护罩被设置为能够形成空腔结构且可拆卸地连接的两个分体(25，26)，以便于拆装；每个绝缘保护罩包覆在导电转接件27、导电压板28以及电极组的正电极(或负电极)的内端；两个绝缘套管29分别套制在电极组的正电极和负电极上，用以包覆正电极和负电极的位于加热筒体17内侧的部分以及内嵌在加热筒体17内部的部分，也就是说，正电极(或负电极)的位于加热筒体17以内的部分均被包覆，以对电极组的导电部分进行保护，防止真空打火。在实际应用中，本发明对绝缘保护罩和绝缘套管的结构没有特别的限制，只要二者能够将电引入组件位于加热筒体17内的导电部分以及电连接处包覆在其中即可。
优选的，支撑组件23还包括上环外壳、下环外壳和外环连接件35，三者均采用绝缘材料制作。其中，上环外壳罩设在上层内环39的外部，用以与上层内环39形成空腔，以将连接在上层内环39上的各个部件容纳在其中，例如加热灯管41的正极/负极和灯管固定件42、导电连接件30与上导电环/下导电环连接的部分等等。同样的，下环外壳罩设在下 层内环31的外部，以将连接在下层内环31上的各个部件容纳在其中。外环连接件35的数量为至少两个，且沿加热筒体17的周向间隔设置，每个外环连接件35分别与上环外壳和下环外壳连接，且对二者进行支撑。
优选的，由于加热灯管41属于损耗品，更换频率较高，因而考虑到拆装的便捷性，上环外壳可以包括至少两个上外分体，所述至少两个上外分体依次可拆卸地连接；下环外壳可以包括至少两个下外分体，所述至少两个上外分体依次可拆卸地连接，并且至少两个上外分体与至少两个下外分体一一对应。例如，在本实施例中，上环外壳由四个上外分体组成，下环外壳由四个下外分体组成，即，将上环外壳平均分割为四个1/4环体，下环外壳平均分割为四个1/4环体，图4A示意性地示出了上环外壳的其中两个1/4环体(34，37)，以及下环外壳的其中两个1/4环体(32，36)。这样，当个别加热灯管41损坏时，只要拆卸对应该加热灯管41的位置处的1/4环体即可，从而可以提高加热灯管41的拆装便捷性，有利于加热腔室100的维修和维护。容易理解，在装卸时，可以整体装卸上环外壳和下环外壳的两个1/4环体以及与二者连接的至少一个外环连接件35。
优选的，本发明实施例提供的加热腔室100还可以包括：设置在腔室组件101上的腔门16，可以通过开启腔门16来更换片盒14，在实际应用中，可以利用腔门16更换装载不同尺寸的基片的片盒，从而可以扩展加热腔室100的应用范围。
优选的，由于各个加热灯管41在加热基片12的同时，也会朝向加热筒体17辐射热量，为了防止加热筒体17过热，加热腔室100还包括设置在加热筒体17内的冷却通道18，通过向冷却通道18中通入冷却水，来冷却加热筒体17。具体地，冷却通道18具有入口和出口(图中未示出)，二者分别与用于输入/输出冷却水的两个水路接头21连接， 形成循环冷却。进一步优选的，加热腔室100还包括温控安全装置20，用于监测加热筒体17的温度，并在加热筒体17的温度高于预设的安全阈值时发出报警信号。
优选的，在加热筒体17的外壁上还设置有把手45，以便于加热筒体17的安装、拆卸或运输。
优选的，在加热筒体17的底部还设置有保护环46，用以对环形加热装置15起到保护作用。
需要说明的是，在本实施例中，加热灯管41为条状灯管，但是本发明并不局限于此，在实际应用中，加热灯管41也可以为诸如螺旋状灯管、环形灯管等的其他任意形状，并且针对不同形状的加热灯管41，对加热灯管41的排布方式以及电性连接方式进行适应性设计，以保证各基片12间以及基片12内各区域的温度均匀性。容易理解，支撑组件23和电引入组件的结构均是配合加热灯管41而设计的，因此，支撑组件23和电引入组件并不局限于本实施例提供的上述结构，应根据加热灯管41的排布方式以及电性连接方式的变化作适应性设计。
还需要说明的是，在实际应用中，片盒14的多个立柱的排布在保证其稳定支撑基片12的基础上，还应使得片盒14上的用以将基片12移出片盒14的开口与传片口相对，以保证基片12能够依次移出片盒14的开口和传片口。除此之外，多个立柱的排布还需要考虑加热灯管41的布局，以避免遮挡加热灯管41辐射出的光线。
作为上述实施例的一个变型实施例，本发明还提供了图5所示的一种加热腔室。请参阅图5，本变型实施例提供的加热腔室200与上述实施例相比，同样包括加热筒体17、环形加热装置、片盒14和片盒升降装置13。由于上述部件或装置的结构和功能与上述实施例相同，在此不再赘述。下面仅对本变型实施例提供的加热腔室200与上述实施例之间的不同点进行详细描述。
具体地，在本变型实施例提供的加热腔室200中，环形加热装置包括加热丝(或加热管)50，其沿加热筒体17的周向螺旋缠绕形成筒状热源，用以自加热筒体17的周围向内部辐射热量，从而可以同时朝向片盒14内的各个基片12辐射热量。容易理解，为了提高加热丝(或加热管)50的加热效率，由加热丝(或加热管)50缠绕形成的筒状结构的内壁应尽量靠近片盒14，但同时又不能阻碍片盒14的升降运动。
需要说明的是，在本实施例中，加热丝(或加热管)50沿加热筒体17的周向螺旋缠绕形成筒状热源，但是本发明并不局限于此，在实际应用中，加热丝(或加热管)50还可以采用其他任意方式缠绕，只要在加热筒体17的内侧环绕形成筒状热源，以能够均匀地朝向其内部辐射热量即可。另外，加热丝(或加热管)50的数量可以为一根，即，由一根加热丝(或加热管)缠绕形成筒状结构，或者，加热丝(或加热管)50的数量还可以为两根以上，两根以上的加热丝(或加热管)之间可以电性连接或者相互独立，并在加热筒体17的内侧均匀排布，以形成筒状热源。
作为另一个技术方案，本发明还提供一种半导体加工设备，其包括加热腔室，该加热腔室可以采用本发明上述各实施例提供的加热腔室。
优选的，半导体加工设备包括缓冲存储区，其可以位于加热腔室的下游，用于存储自来加热腔室且已在加热腔室内完成加热工艺的基片。借助该缓冲存储区，可以在进行下一步工序的设备单次加工基片的数量少于片盒中的基片数量时，放置需等待进行下一步工序的基片。
本发明实施例提供的半导体加工设备，其通过采用本发明上述任一实施例提供的加热腔室，不仅可以实现单次对在竖直方向上间隔排布的多层基片同时进行加热，从而成倍地增加单位时间内加工基片的数量，而且更容易保证基片各区域之间以及各基片间的温度均匀性，从而可以提高工艺均匀性。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (17)

  1. 一种加热腔室，其为真空环境，且具有可供基片通过的传片口，其特征在于，所述加热腔室包括：
    加热筒体，设置在所述加热腔室内，且位于所述传片口的上方；
    环形加热装置，与所述加热筒体固定连接，环绕设置在所述加热筒体内侧，用以自所述加热筒体的周围向内部辐射热量；
    片盒，用于承载多层基片，且使所述多层基片沿所述加热筒体的轴向间隔排布；
    片盒升降装置，用于驱动所述片盒上升至由所述环形加热装置限定的内部空间内，或者下降至与所述传片口相对应的位置处。
  2. 根据权利要求1所述的加热腔室，其特征在于，所述环形加热装置包括：
    多个加热灯管，沿所述加热筒体的周向环绕形成筒状热源；
    支撑组件，用于固定所述多个加热灯管；
    电引入组件，用于将电流传导至各个加热灯管。
  3. 根据权利要求2所述的加热腔室，其特征在于，所述支撑组件包括上层内环、下层内环和内环连接件，三者均采用绝缘材料制作，其中，
    所述上层内环和下层内环在所述加热筒体的轴向上相对设置，每个加热灯管位于所述上层内环和下层内环之间，且分别与二者固定连接；
    所述内环连接件的数量为多个，且沿所述加热筒体的周向间隔设置；每个内环连接件分别与所述上层内环和下层内环连接，且对二者进行支撑。
  4. 根据权利要求3所述的加热腔室，其特征在于，所述电引入组件包括上导电环、下导电环和电极组，其中，
    所述上导电环环绕设置在所述上层内环的外侧，所述下导电环环绕设置在所述下层内环的外侧；每个加热灯管的正极/负极分别与所述上导电环/下导电环电连接；
    所述电极组包括正电极和负电极，所述正电极/负电极的内端通过所述上导电环/下导电环同时与各个加热灯管的正极/负极对应连接，所述正电极/负电极的外端位于所述加热筒体的外部。
  5. 根据权利要求4所述的加热腔室，其特征在于，所述多个加热灯管被平均分配形成至少两组加热灯管组；并对应地，所述上导电环和下导电环分别被分割形成不相接触的至少两个上半环和至少两个下半环；所述电极组的数量与所述加热灯管组的数量一致；
    每组加热灯管组中的每个加热灯管的正极/负极分别和与该组加热灯管组一一对应的上半环/下半环电连接；每组电极组的正电极/负电极的内端和与该组电极组一一对应的上半环/下半环电连接。
  6. 根据权利要求5所述的加热腔室，其特征在于，所述电引入组件还包括：
    至少两个上绝缘件，每个上绝缘件设置在相邻的两个上半环之间的间隙内，用以使所述相邻的两个上半环电绝缘；
    至少两个下绝缘件，每个下绝缘件设置在相邻的两个下半环之间的间隙内，用以使所述相邻的两个下半环之间电绝缘。
  7. 根据权利要求4所述的加热腔室，其特征在于，所述电引入组件还包括：
    两个导电转接件，用于分别将所述电极组中的正电极和负电极的内端对应地与所述上导电环和下导电环电连接；
    两个导电压板，用于分别将所述两个导电转接件对应地与所述电极组中 的正电极和负电极固定在一起。
  8. 根据权利要求7所述的加热腔室，其特征在于，所述电引入组件还包括：
    两个绝缘保护罩，每个绝缘保护罩用于包覆所述导电转接件、导电压板以及所述电极的内端；
    两个绝缘套管，分别套制在所述正电极和负电极上，用以包覆所述正电极和负电极的位于所述加热筒体内侧的部分以及内嵌在所述加热筒体内部的部分。
  9. 根据权利要求2所述的加热腔室，其特征在于，所述加热灯管为条状灯管，所述条状灯管的长度方向与所述加热筒体的轴向相互平行，且多个所述条状灯管沿所述加热筒体的周向间隔排布。
  10. 根据权利要求3所述的加热腔室，其特征在于，所述支撑组件还包括上环外壳、下环外壳和外环连接件，三者均采用绝缘材料制作，其中，
    所述上环外壳罩设在所述上层内环的外部；
    所述下环外壳罩设在所述下层内环的外部；
    所述外环连接件的数量为至少两个，且沿所述加热筒体的周向间隔设置，每个外环连接件分别与所述上环外壳和下环外壳连接，且对二者进行支撑。
  11. 根据权利要求10所述的加热腔室，其特征在于，所述上环外壳包括首尾连接的至少两个上外分体，所述至少两个上外分体两两之间可拆卸地连接；所述下环外壳包括首尾连接的至少两个下外分体，所述至少两个下外分体两两之间可拆卸地连接，并且
    所述至少两个上外分体与所述至少两个下外分体一一对应。
  12. 根据权利要求1所述的加热腔室，其特征在于，所述环形加热装置包括：
    加热丝或加热管，在所述加热筒体的内侧环绕形成筒状热源；
    电引入组件，用于将电流传导至所述加热丝或加热管。
  13. 根据权利要求1所述的加热腔室，其特征在于，所述加热腔室还包括腔门，通过开启所述腔门来更换所述片盒。
  14. 根据权利要求1所述的加热腔室，其特征在于，在所述加热筒体内还设置有用于容纳冷却介质的冷却通道，所述冷却介质用于冷却所述加热筒体。
  15. 根据权利要求1所述的加热腔室，其特征在于，所述加热腔室还包括：
    温控安全装置，用于监测所述加热筒体的温度，并在所述加热筒体的温度高于预设的安全阈值时发出报警信号。
  16. 一种半导体加工设备，其包括加热腔室，其特征在于，所述加热腔室采用权利要求1-15任意一项所述的加热腔室。
  17. 根据权利要求16所述的半导体加工设备，其特征在于还包括位于加热腔室下游的缓冲存储区，用于存储自来加热腔室且已在加热腔室内完成加热工艺的基片。
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