WO2016095243A1 - 液晶面板及其制备方法 - Google Patents

液晶面板及其制备方法 Download PDF

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Publication number
WO2016095243A1
WO2016095243A1 PCT/CN2014/094585 CN2014094585W WO2016095243A1 WO 2016095243 A1 WO2016095243 A1 WO 2016095243A1 CN 2014094585 W CN2014094585 W CN 2014094585W WO 2016095243 A1 WO2016095243 A1 WO 2016095243A1
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Prior art keywords
pixel region
liquid crystal
pixel electrode
pixel
color resist
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PCT/CN2014/094585
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English (en)
French (fr)
Inventor
熊源
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/417,078 priority Critical patent/US9507217B2/en
Publication of WO2016095243A1 publication Critical patent/WO2016095243A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process

Definitions

  • the present invention relates to the field of display, and in particular, to a liquid crystal panel and a method of fabricating the same.
  • the viewing angle of the conventional liquid crystal display panel is small, and when the viewer is located on the side of the liquid crystal display panel, the image presented by the liquid crystal display panel cannot be clearly seen. Therefore, in recent years, the industry has invested in the research and production of liquid crystal display panels with wide viewing angle functions.
  • the common techniques of the wide viewing angle function include: through the pixel electrode of the special pattern, when the electric field is applied to the liquid crystal display panel, the liquid crystal molecules in different regions have different angles of inclination, thereby achieving the purpose of wide viewing angle.
  • the pixel electrode is generally electrically connected to the active device through the through hole and the connection pattern.
  • the connection pattern will pad a part of the pixel electrode, such a structure may cause the tilting direction of the liquid crystal molecules in the vicinity of the connection pattern to be disordered.
  • the transmittance of the liquid crystal display panel is lowered, which affects the display effect, and a stable wide-angle function cannot be achieved.
  • the present invention provides a liquid crystal panel and a method for fabricating the same, which solves the technical problem of low transmittance in the prior art and easy tilting of the liquid crystal, resulting in failure to provide a stable wide viewing angle function.
  • a liquid crystal panel includes a first substrate, a second substrate, and a liquid crystal layer disposed between the first substrate and the second substrate, wherein the liquid crystal panel further includes: a first substrate:
  • a pixel electrode comprising at least one main pixel region, at least one sub-pixel region, at least one first transition pixel region, and at least one second transition pixel region, wherein a first color resist thickness of the main pixel region is greater than a second color of the sub-pixel region a thickness of the first transition pixel region between the main pixel region and the sub-pixel region, wherein a third color resist thickness of the first transition pixel region is at the first color resist thickness and the second color Between the thicknesses, and the third color resistance is a predetermined height or a gradation height interval, and the second transition pixel region is located at one side of the first through hole or/and the second through hole Or both sides, the fourth color resist thickness of the second transition region is a gradation interval that decreases from the first color resist thickness or the second color resist thickness;
  • Thin film transistors respectively connected to the data lines, the scan lines, and the pixel electrodes;
  • a storage capacitor is coupled to the pixel electrode.
  • the first transition pixel region is one of a triangle, a step, or a circular arc.
  • the first through hole penetrates from the pixel electrode to the thin film transistor, and a metal layer is laid on a surface layer of the pixel electrode and the first through hole to form the data line, so that the data A line connects the pixel electrodes.
  • the second through hole penetrates from the pixel electrode to the storage capacitor, and a metal layer is laid on a surface layer of the pixel electrode and the second through hole to connect the pixel electrode and the storage capacitance.
  • the second transition pixel region has one of a triangle shape, a step shape, or a circular arc shape.
  • the thin film transistor comprises:
  • a source electrode connected to the data line and receiving an electronic input
  • a drain electrode connected to the pixel electrode for electronic output
  • the active layer is made of an indium gallium zinc oxide material for forming a conductive channel.
  • the embodiment of the present invention provides the following technical solutions:
  • a liquid crystal panel includes a first substrate, a second substrate, and a liquid crystal layer disposed between the first substrate and the second substrate.
  • the first substrate is provided with:
  • the pixel electrode includes at least one main pixel region and at least one sub-pixel region, wherein a first color resist thickness of the main pixel region is greater than a second color resist thickness of the sub-pixel region;
  • Thin film transistors respectively connected to the data lines, the scan lines, and the pixel electrodes;
  • a storage capacitor is coupled to the pixel electrode.
  • the pixel electrode further includes at least one first transition pixel region between the main pixel region and the sub-pixel region, and a third color resist thickness of the first transition pixel region is located at the first color resist The thickness is between the second color resistance and the third color resistance is a preset height or a gradation height interval.
  • the first transition pixel region has one of a triangle shape, a step shape, or a circular arc shape.
  • a first through hole is formed in the pixel electrode, the first through hole penetrating from the pixel electrode to the thin film transistor, and metal is laid on a surface layer of the pixel electrode and the first through hole A layer is formed to form the data line such that the data line is connected to the pixel electrode.
  • a second through hole is formed in the pixel electrode, the second through hole penetrating from the pixel electrode to the storage capacitor, and metal is laid on a surface layer of the pixel electrode and the second through hole a layer to connect the pixel electrode and the storage capacitor.
  • the pixel electrode further includes at least one second transition pixel region on a side or both sides of the first through hole or/and the second through hole, and a fourth color resist thickness of the second transition region A gradation interval that is decremented from the first color resist thickness or the second color resist thickness.
  • the second transition pixel region has one of a triangle shape, a step shape, or a circular arc shape.
  • the thin film transistor comprises:
  • a source electrode connected to the data line and receiving an electronic input
  • a drain electrode connected to the pixel electrode for electronic output
  • the active layer is made of an indium gallium zinc oxide material for forming a conductive channel.
  • the embodiment of the present invention further provides the following technical solutions:
  • a method for preparing a liquid crystal panel comprising the following steps:
  • the pixel electrode including at least one main pixel region and at least one sub-pixel region, wherein a first color resist thickness of the main pixel is greater than the sub-pixel Second color resist thickness;
  • Liquid crystal molecules are filled between the first substrate and the second substrate to form a liquid crystal layer.
  • the method further includes:
  • the fourth color resist thickness of the second transition region is a gradation interval that decreases from the first color resist thickness or the second color resist thickness.
  • the liquid crystal panel and the method for fabricating the same according to the present invention provide different driving efficiencies to the liquid crystal layer at the same driving voltage by setting different color resist thicknesses of the main pixel region and the sub-pixel region, thereby improving the driving efficiency thereof.
  • the wide viewing angle of the assembled display device shows the effect.
  • FIG. 1 is a schematic cross-sectional view showing a liquid crystal panel according to Embodiment 1 of the present invention.
  • 2A-2D are schematic structural views of pixel electrodes of different shapes according to Embodiment 1 of the present invention.
  • FIG. 3 is a schematic diagram of an equivalent circuit of a thin film transistor according to Embodiment 1 of the present invention.
  • FIG. 4 is a schematic cross-sectional view showing a thin film transistor in Embodiment 1 of the present invention.
  • FIG. 5 is a flow chart showing a method of fabricating a liquid crystal panel according to Embodiment 2 of the present invention.
  • Figure 6 is a schematic view showing an exposure procedure in the second embodiment of the present invention.
  • FIG. 7A and 7B are respectively schematic structural views of a photomask according to Embodiment 2 of the present invention.
  • FIG. 1 is a schematic cross-sectional view of a liquid crystal panel provided by the present invention.
  • the liquid crystal panel shown includes a first substrate 1 , a second substrate 2 , and a liquid crystal layer 3 disposed between the first substrate 1 and the second substrate 2 .
  • the first substrate 1 further includes a thin film transistor 11, a storage capacitor 12, and a pixel electrode 13.
  • the pixel electrode 13 covers the thin film transistor 11 and the storage capacitor 12.
  • the pixel electrode 13 includes at least one main pixel region 131 and at least one sub-pixel region 132, and may further include at least one first transition pixel region 133, and/or at least one second transition pixel region 134.
  • the first color resist thickness of the main pixel region 131 is greater than the second color resist thickness of the sub-pixel region 132, such that the first cell thickness d1 formed by the liquid crystal layer on the main pixel region 131 is smaller than the liquid crystal layer on the sub-pixel region 132.
  • the second box formed has a thickness d2.
  • the cell thickness of the main pixel region 131 is thinner than that of the pixel region 132, and the difference is at least 0.2 micrometers to ensure the liquid crystal molecular efficiency corresponding to the liquid crystal molecules corresponding to the pixel region 132 of the main pixel region 131.
  • the difference is at least 0.2 micrometers to ensure the liquid crystal molecular efficiency corresponding to the liquid crystal molecules corresponding to the pixel region 132 of the main pixel region 131.
  • the thickness of the third color resist of the first transition pixel region 133 is between the first color resist thickness of the main pixel region 131 and the sub-pixel region 132.
  • the preset height is between the first color resist thickness and the second color resist thickness, and details are not described herein.
  • the gradient height interval is one of a triangle (as shown in Fig. 2B), a stepped shape (Fig. 2C), or a convex or concave circular shape (Fig. 2D).
  • the color resist thickness refers to the height from the substrate to the top of the color resist. If the bottom of the partial color resist covers a part of the thin film transistor or the storage capacitor, the color resist thickness referred to herein also refers to the Calculated on a substrate.
  • the color resistance in the pixel electrode 13 is formed by applying a three-layer color filter layer of red, green, and blue (RGB) over the thin film transistor 11. Moreover, the color resistance and the thin film transistor together constitute a color filter stacked thin film transistor (COA, Color Filter On Array) structure. Since the color resistance is directly formed on the thin film transistor 11, no alignment error is generated. Therefore, this COA structure itself has a better resolution and a higher aperture ratio of its pixels.
  • COA color filter stacked thin film transistor
  • FIG. 3 is a schematic diagram of the effect of the thin film transistor
  • the source level S, the gate electrode G, and the drain electrode D of the thin film transistor 11 are connected to the data line 14, the scan line 15, the pixel electrode 13, and the storage capacitor 12, respectively. It is used to control switching of the pixel electrode 13.
  • the thin film transistor 11 includes:
  • Gate electrode G (Gate An electrode is connected to the scan line 15, and the gate electrode G is mainly made of a metal material;
  • Source electrode S Source An electrode, disposed on the active layer Y, connected to the data line 14 to receive an electronic input;
  • Drain electrode D Drain An electrode is disposed on the active layer Y and connected to the pixel electrode for electronic output to control switching of the pixel electrode 13.
  • An insulating layer is disposed on the gate electrode G;
  • An active layer Y is deposited on the insulating layer by indium gallium zinc oxide (Indium Gallium Zinc) Oxide, IGZO) is made of a material for forming a conductive channel.
  • IGZO indium gallium zinc oxide
  • TAOS transparent amorphous oxide semiconductor
  • IGZO transparent amorphous oxide semiconductor
  • the liquid crystal panel starts a horizontal scanning line 15 at a time at the same time to turn on all the thin film transistors 11 on the scanning line 15, and sends a corresponding video signal via the vertical data line 14 to charge the pixel electrode 13 to an appropriate voltage. .
  • the thin film transistor 11 is then turned off until the next time the signal is rewritten, during which the charge is stored on the storage capacitor 12; at this time, the next horizontal scanning line 15 is restarted and its corresponding video signal is fed. In this way, the video data of the entire picture is sequentially written, and the signal is rewritten from the first line (generally the frequency of this repetition is 60 to 70 Hz).
  • a first through hole 41 is formed in the pixel electrode 13, and the first through hole 41 penetrates from the pixel electrode 13 to the thin film transistor 11, and at the pixel electrode 13 A metal layer is laid on the surface layer of the first through hole 41 to form the data line 14, and the data line 14 is connected to the pixel electrode 13 to control the rotation of liquid crystal molecules in the liquid crystal layer.
  • a second through hole 42 is formed in the pixel electrode 13 , the second through hole 42 penetrating from the pixel electrode 13 to the storage capacitor 12 , and the pixel electrode 13 and the second through hole 42 .
  • the surface layer is laid with a metal layer to connect the pixel electrode 13 and the storage capacitor 12.
  • the second transition pixel region 134 is located on both sides of the first through hole 41 and/or the second through hole 42 , and the fourth color resist thickness of the second transition region 134 is from the first color resist thickness Or a gradient interval in which the thickness of the second color resist begins to decrease.
  • the second transition pixel region has one of a triangle shape, a step shape, or a circular arc shape.
  • the liquid crystal panel of the present invention has different color resistive thicknesses from the main pixel region 131 and the sub-pixel region 132, and the response speed of the liquid crystal in the upper cell thickness is also different. Therefore, when the same voltage is applied, different influencing efficiencies can be exhibited, and the efficiency is improved. Light penetration, thereby improving the large viewing angle display of the assembled display device.
  • FIG. 5 it is a flowchart of a method of preparing a liquid crystal panel. It mainly includes the following steps:
  • step S501 a first substrate is prepared.
  • a thin film transistor, a storage capacitor, and a pixel electrode are formed on the first substrate.
  • the pixel electrode 13 covers the thin film transistor 11 and the storage capacitor 12.
  • the pixel electrode 13 includes at least one main pixel region 131 and at least one sub-pixel region 132, and may further include at least one first transition pixel region 133, and/or at least one second transition pixel region 134.
  • the first color resist thickness of the main pixel region 131 is greater than the second color resist thickness of the sub-pixel region 132.
  • the thickness of the third color resist of the first transition pixel region 133 is between the first color resist thickness and the second color resist thickness.
  • the fourth color resist thickness of the second transition region 134 is a gradation interval that decreases from the first color resist thickness or the second color resist thickness. Please refer to FIG. 2A to FIG. 2D for various changes, and details are not described herein again.
  • the reticle 7 includes a light transmitting region 71, a light shielding region 72, and a partial light transmitting region 73 or 74.
  • the light-transmissive region 71 corresponds to the first through-hole 41 and/or the second through-hole 42
  • the light-shielding region 72 corresponds to the main pixel region 131, and the portion of the liquid crystal cell sealed by the sealant
  • the partial light-transmissive region 73 Corresponding to the sub-pixel region 132, the first transition pixel region 133, and the second transition pixel region 134.
  • the essence of the partially transparent region 73 or 74 is that the light transmitting region 71 and the light shielding region 72 are alternately arranged in a strip shape or a mesh shape.
  • the color resistance thickness of the main pixel region, the sub-pixel region, and the first transition region and the second transition region can be achieved.
  • the display panel of the present invention has different color resistance thicknesses of the main pixel region 131 and the sub-pixel region 132, so that the response speed of the liquid crystal in the cell thickness is also different, and therefore, when the same voltage is applied, different influencing efficiencies can be exhibited. Improve light penetration, thereby improving the large viewing angle display of the assembled display device.
  • step S503 a second substrate is prepared.
  • step S504 liquid crystal molecules are filled between the first substrate and the second substrate to form a liquid crystal layer.
  • the liquid crystal panel prepared by the invention has different thicknesses of the main pixel region and the sub-pixel region, and the response speed of the liquid crystal in the upper cell thickness is also different. Therefore, when the same voltage is applied, different influencing efficiencies can be exhibited, and light penetration is improved. Transparency, thereby improving the large viewing angle display effect of the assembled display device.

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Abstract

一种液晶面板及其制备方法，包括第一基板（1）、第二基板（2）和液晶层（3），第一基板（1）上配置有像素电极（13）、薄膜晶体管（11）和存储电容（12）。像素电极（13）包括主像素区域（131）和亚像素区域（132），主像素区域（131）的第一色阻厚度大于亚像素区域（132）的第二色阻厚度。通过设置不同色阻厚度，在相同驱动电压下对液晶层产生不同的驱动效率，从而改善大视角的显示效果。

Description

液晶面板及其制备方法 技术领域
本发明涉及显示领域，尤其涉及一种液晶面板及其制备方法。
 背景技术
传统的液晶显示面板的可视角度较小，当观看者位于液晶显示面板的侧面时，便无法清楚地看见液晶显示面板所呈现的影像。因此近几年业界纷纷投入具备广视角功能的液晶显示面板的研究与生产。
广视角功能常用技术包括：通过特殊图案的像素电极，使得当施加电场于液晶显示面板时，不同区域的液晶分子具有不同方向的倾斜角度，进而实现广视角的目的。像素电极一般需通过贯穿孔及连接图案与主动元件电性连接。然而因连接图案会将一部分的像素电极垫高，如此的结构会使得连接图案附近的液晶分子的倾倒方向产生错乱。然而，一旦液晶分子产生非预期中的倾倒方向，反而会降低液晶显示面板的透光率，影响显示效果，无法实现稳定的广角功能。
 技术问题
有鉴于此，本发明提供一种液晶面板及其制备方法，以解决现有技术中透光率低、液晶易倾倒而导致不能提供稳定广视角功能的技术问题。
 技术解决方案
一种液晶面板，包括第一基板、第二基板、及配置于所述第一基板与第二基板之间的液晶层，其中所述液晶面板还包括位于第一基板的：
像素电极，包括至少一个主像素区域、至少一个亚像素区域、至少一个第一过渡像素区域以及至少一个第二过渡像素区域，其中主像素区域的第一色阻厚度大于亚像素区域的第二色阻厚度，所述第一过渡像素区域位于所述主像素区域与所述亚像素区域之间，第一过渡像素区域的第三色阻厚度位于所述第一色阻厚度与所述第二色阻厚度之间，且所述第三色阻为一预设高度或一渐变的高度区间，所述第二过渡像素区域位于所述第一贯穿孔或/和所述第二贯穿孔的一侧或两侧，第二过渡区域的第四色阻厚度为从所述第一色阻厚度或第二色阻厚度开始递减的渐变区间；
薄膜晶体管，分别连接于数据线、扫描线和像素电极；以及
存储电容，连接于所述像素电极。
优选地，其中所述第一过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
优选地，所述第一贯穿孔从所述像素电极贯穿至所述薄膜晶体管，并在所述像素电极和所述第一贯穿孔的表层铺设金属层以形成所述数据线，使所述数据线连接所述像素电极。
优选地，所述第二贯穿孔从所述像素电极贯穿至所述存储电容，并在所述像素电极和所述第二贯穿孔的表层铺设金属层，以连接所述像素电极和所述存储电容。
优选地，其中所述第二过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
优选地，其中所述薄膜晶体管包括：
栅电极，连接于所述扫描线；
源电极，连接于所述连接于所述数据线，接收电子输入；
漏电极，连接于所述像素电极，进行电子输出；以及
有源层，由铟镓锌氧化物材料制成，用于形成导电沟道。
为解决上述技术问题，本发明实施例提供以下技术方案：
一种液晶面板，包括第一基板、第二基板、及配置于所述第一基板与第二基板之间的液晶层，第一基板上设置有：
像素电极，包括至少一个主像素区域及至少一个亚像素区域，其中主像素区域的第一色阻厚度大于亚像素区域的第二色阻厚度；
薄膜晶体管，分别连接于数据线、扫描线和像素电极；以及
存储电容，连接于所述像素电极。
优选地，所述像素电极还包括至少一个第一过渡像素区域，位于所述主像素区域与所述亚像素区域之间，第一过渡像素区域的第三色阻厚度位于所述第一色阻厚度与所述第二色阻厚度之间，且所述第三色阻为一预设高度或一渐变的高度区间。
优选地，所述第一过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
优选地，在所述像素电极上形成第一贯穿孔，所述第一贯穿孔从所述像素电极贯穿至所述薄膜晶体管，并在所述像素电极和所述第一贯穿孔的表层铺设金属层以形成所述数据线，使所述数据线连接所述像素电极。
优选地，在所述像素电极上形成第二贯穿孔，所述第二贯穿孔从所述像素电极贯穿至所述存储电容，并在所述像素电极和所述第二贯穿孔的表层铺设金属层，以连接所述像素电极和所述存储电容。
优选地，所述像素电极还包括至少一个第二过渡像素区域，位于所述第一贯穿孔或/和所述第二贯穿孔的一侧或两侧，第二过渡区域的第四色阻厚度为从所述第一色阻厚度或第二色阻厚度开始递减的渐变区间。
优选地，所述第二过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
优选地，所述薄膜晶体管包括：
栅电极，连接于所述扫描线；
源电极，连接于所述连接于所述数据线，接收电子输入；漏电极，连接于所述像素电极，进行电子输出；以及
有源层，由铟镓锌氧化物材料制成，用于形成导电沟道。
为解决上述技术问题，本发明实施例还提供以下技术方案：
一种液晶面板的制备方法，包括如下步骤：
制备第一基板；
在所述第一基板上生成薄膜晶体管、存储电容和像素电极，所述像素电极包括至少一个主像素区域及至少一个亚像素区域，所述主像素的第一色阻厚度大于所述亚像素的第二色阻厚度；
制备第二基板；以及
在所述第一基板与所述第二基板之间填充液晶分子，用以形成液晶层。
优选地，在生成像素电极的步骤中，还包括：
生成至少一个第一过渡像素区域，位于所述主像素区域与所述亚像素区域之间，第一过渡像素区域的第三色阻的厚度介于所述第一色阻厚度与所述第二色阻厚度之间；和/或
生成至少一个第二过渡像素区域，位于所述薄膜晶体管与所述像素电极之间的第一贯穿孔和/或所述存储电容与所述像素电极之间的第二贯穿孔的两侧，第二过渡区域的第四色阻厚度为从所述第一色阻厚度或所述第二色阻厚度开始递减的渐变区间。
 有益效果
相对于现有技术，本发明中的液晶面板及其制备方法通过设置主像素区域、亚像素区域的不同色阻厚度，使其在相同驱动电压下对液晶层产生不同的驱动效率，从而改善其组装的显示设备的广视角显示效果。
 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为本发明实施例一中液晶面板的剖面示意图；
图2A~图2D分别为本发明实施例一中不同形状的像素电极的结构示意图；
图3为本发明实施例一中薄膜晶体管的等效电路示意图；
图4是本发明实施例一中薄膜晶体管的剖面示意图；
图5是本发明实施例二中液晶面板的制备方法的流程图；
图6是本发明实施例二中曝光程序中的示意图；
图7A和图7B分别是本发明实施例二中光罩的结构示意图。
 本发明的最佳实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本发明具体实施例，其不应被视为限制本发明未在此详述的其它具体实施例。
实施例一
如图1所示，为本发明提供的液晶面板的剖面示意图。所示液晶面板包括：第一基板1、第二基板2、及配置于所述第一基板1与第二基板2之间的液晶层3。其中，第一基板1上还包括：薄膜晶体管11、存储电容12和像素电极13。
其中，像素电极13覆盖在薄膜晶体管11与存储电容12之上。
像素电极13，包括至少一个主像素区域131及至少一个亚像素区域132，还可以包括至少一个第一过渡像素区域133、和/或至少一个第二过渡像素区域134。
其中，主像素区域131的第一色阻厚度大于亚像素区域132的第二色阻厚度，使得主像素区域131上液晶层所形成的第一盒厚d1小于所述亚像素区域132上液晶层所形成的第二盒厚d2。
可以理解的是：液晶的盒厚与液晶层3的双直射率及螺距之间有一个最佳匹配值，在同一液晶面板中不同的匹配值，会导致液晶层不同的响应效率。在本发明中，主像素区域131的盒厚比亚像素区域132的盒厚要薄一些，差异至少大于0.2微米，以保证主像素区域131对应的液晶分子比亚像素区域132对应的液晶分子效率有明显差异。可以理解的是：请参阅图2A~图2D所示，在主像素区域131与亚像素区域132之间可能为直接过渡（如图2A），也可能包括至少一个第一过渡像素区域133，位于所述主像素区域131与所述亚像素区域132之间，所述第一过渡像素区域133的第三色阻的厚度介于主像素区域131的第一色阻厚度与亚像素区域132的第二色阻厚度之间，且所述第三色阻为一预设高度或一渐变的高度区间。其中，所述预设高度为介于第一色阻厚度与第二色阻厚度之间，不再赘述。而渐变高度区间，如三角形（如图2B）、阶梯形（如图2C）、或凸起或凹进的圆弧形（如图2D）中的一种。
此外，需要说明的是：色阻厚度是指从基板到色阻顶端的高度，如果部分色阻的底部覆盖了部分薄膜晶体管或存储电容，本文所指的色阻厚度亦是指从所述第一基板上起算。
其中像素电极13中的色阻，是将红、绿、蓝(RGB)三层彩色滤光层叠层涂布在薄膜晶体管11的上方形成的。且，色阻与薄膜晶体管共同构成彩色滤光片叠加薄膜晶体管(COA，Color Filter On Array)结构。由于色阻是直接形成于薄膜晶体管11上，因此不会产生对位误差。因此，这种COA结构本身即具有较佳的分辨率且其像素的开口率亦较高。
如图3所示，为薄膜晶体管的效果示意图，所示薄膜晶体管11的源电级S、栅电极G、漏电极D分别连接于数据线14、扫描线15、像素电极13以及存储电容12，用于控制像素电极13的开关切换。
同时结合图3与图4，所述薄膜晶体管11包括：
栅电极G（Gate electrode），连接于所述扫描线15，所述栅电极G主要采用金属材质制成；
源电极S（Source electrode），设置于所述有源层Y上，连接于所述所述数据线14，接收电子输入；
漏电极D（Drain electrode），设置于所述有源层Y上，连接于所述像素电极，进行电子输出，以控制所述像素电极13的开关切换。
绝缘层，铺设于所述栅电极G上；
有源层Y，铺设于所述绝缘层上，由铟镓锌氧化物（Indium Gallium Zinc Oxide，IGZO）材料制成，用于形成导电沟道。可以理解的是：以铟镓锌氧化物(IGZO)为代表的透明非晶氧化物半导体(TAOS)具有迁移率高、均一性好、透明等优点，可以改进薄膜晶体管的驱动效率。
液晶面板同一时间一次起动一条水平扫描线15，以将该条扫描线15上的所有薄膜晶体管11打开，而经由垂直数据线14送入对应的视频信号，以将像素电极13充电至适当的电压。接着关闭薄膜晶体管11，直到下次再重新写入信号，其间使得电荷保存在存储电容上12；此时再起动次一条水平扫描线15，送入其对应的视频信号。如此依序将整个画面的视讯数据写入，再重新自第一条重新写入信号(一般此重复的频率为60~70Hz)。
此外，如图1所示，在所述像素电极13上形成第一贯穿孔41，所述第一贯穿孔41从所述像素电极13贯穿至所述薄膜晶体管11，并在所述像素电极13和所述第一贯穿孔41的表层铺设金属层以形成所述数据线14，使所述数据线14连接所述像素电极13，以控制液晶层中液晶分子的转动。
在所述像素电极13上形成第二贯穿孔42，所述第二贯穿孔42从所述像素电极13贯穿至所述存储电容12，并在所述像素电极13和所述第二贯穿孔42的表层铺设金属层，以连接所述像素电极13和所述存储电容12。
可以理解的是：第二过渡像素区域134，位于第一贯穿孔41和/或第二贯穿孔42的两侧，第二过渡区域134的第四色阻厚度为从所述第一色阻厚度或第二色阻厚度开始递减的渐变区间。且，所述第二过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
本发明的液晶面板通过主像素区域131与亚像素区域132的色阻厚度不同，其上盒厚内液晶的响应速度亦不同，因此，当施加相同电压时，可呈现出不同的影响效率，提高光穿透度，从而改善其组装的显示设备的大视角显示效果。
实施例二
如图5所示，为液晶面板的制备方法的流程图。主要包括如下步骤：
在步骤S501中，制备第一基板。
在步骤S502中，在所述第一基板上生成薄膜晶体管、存储电容和像素电极。其中，像素电极13覆盖在薄膜晶体管11与存储电容12之上。像素电极13，包括至少一个主像素区域131及至少一个亚像素区域132，还可以包括至少一个第一过渡像素区域133、和/或至少一个第二过渡像素区域134。
其中，主像素区域131的第一色阻厚度大于亚像素区域132的第二色阻厚度。所述第一过渡像素区域133的第三色阻的厚度介于第一色阻厚度与第二色阻厚度之间。第二过渡区域134的第四色阻厚度为从所述第一色阻厚度或第二色阻厚度开始递减的渐变区间。其各类变化请参阅图2A~图2D所示，此处不再赘述。
具体而言，至少包括如图6中的曝光的工序示意图，以形成所述不同的色阻厚度：
请同时参阅图7A和图7B的光罩示例图。所述光罩7包括透光区71、遮光区72、以及部分透光区73或74。其中，透光区71对应第一贯穿孔41和/或第二贯穿孔42，遮光区72对应主像素区域131、以及液晶盒的四边由框胶进行密封的部分，而部分透光区73则对应亚像素区域132、第一过渡像素区域133、以及第二过渡像素区域134。其中，部分透光区73或74的本质为透光区71与遮光区72呈条状、网状交替设置。
可以理解的是：通过所述光罩的设计，在曝光及后续的显影工序中，可以实现所述主像素区域、亚像素区域、以及第一过渡区域、第二过渡区域的色阻厚度。
本发明的显示面板，通过主像素区域131与亚像素区域132的色阻厚度不同，其使盒厚内液晶的响应速度亦不同，因此，当施加相同电压时，可呈现出不同的影响效率，提高光穿透度，从而改善其组装的显示设备的大视角显示效果。
在步骤S503中，制备第二基板。
在步骤S504中，在所述第一基板与所述第二基板之间填充液晶分子，用以形成液晶层。
本发明所制备的液晶面板通过主像素区域与亚像素区域的厚度不同，其上盒厚内液晶的响应速度亦不同，因此，当施加相同电压时，可呈现出不同的影响效率，提高光穿透度，从而改善其组装的显示设备的大视角显示效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通测试人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (16)

  1. 一种液晶面板，包括第一基板、第二基板、及配置于所述第一基板与第二基板之间的液晶层，其中所述液晶面板还包括位于所述第一基板的：
    像素电极，包括至少一个主像素区域、至少一个亚像素区域、至少一个第一过渡像素区域以及至少一个第二过渡像素区域，其中，主像素区域的第一色阻厚度大于亚像素区域的第二色阻厚度，所述第一过渡像素区域位于所述主像素区域与所述亚像素区域之间，第一过渡像素区域的第三色阻厚度位于所述第一色阻厚度与所述第二色阻厚度之间，且所述第三色阻为一预设高度或一渐变的高度区间，所述第二过渡像素区域位于所述第一贯穿孔或/和所述第二贯穿孔的一侧或两侧，第二过渡区域的第四色阻厚度为从所述第一色阻厚度或第二色阻厚度开始递减的渐变区间；
    薄膜晶体管，分别连接于数据线、扫描线和像素电极；以及
    存储电容，连接于所述像素电极。
  2. 如权利要求1所述的液晶面板，其中所述第一过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
  3. 如权利要求1所述的液晶面板，其中，
    所述第一贯穿孔从所述像素电极贯穿至所述薄膜晶体管，并在所述像素电极和所述第一贯穿孔的表层铺设金属层以形成所述数据线，使所述数据线连接所述像素电极。
  4. 如权利要求3所述的液晶面板，其中，
    所述第二贯穿孔从所述像素电极贯穿至所述存储电容，并在所述像素电极和所述第二贯穿孔的表层铺设金属层，以连接所述像素电极和所述存储电容。
  5. 如权利要求4所述的液晶面板，其中所述第二过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
  6. 如权利要求1所述的液晶面板，其中所述薄膜晶体管包括：
    栅电极，连接于所述扫描线；
    源电极，连接于所述连接于所述数据线，接收电子输入；
    漏电极，连接于所述像素电极，进行电子输出；以及
    有源层，由铟镓锌氧化物材料制成，用于形成导电沟道。
  7. 一种液晶面板，包括第一基板、第二基板、及配置于所述第一基板与第二基板之间的液晶层，其中所述液晶面板还包括位于第一基板的：
    像素电极，包括至少一个主像素区域及至少一个亚像素区域，其中主像素区域的第一色阻厚度大于亚像素区域的第二色阻厚度；
    薄膜晶体管，分别连接于数据线、扫描线和像素电极；以及
    存储电容，连接于所述像素电极。
  8. 如权利要求7所述的液晶面板，其中，所述像素电极还包括至少一个第一过渡像素区域，位于所述主像素区域与所述亚像素区域之间，第一过渡像素区域的第三色阻厚度位于所述第一色阻厚度与所述第二色阻厚度之间，且所述第三色阻为一预设高度或一渐变的高度区间。
  9. 如权利要求8所述的液晶面板，其中，所述第一过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
  10. 如权利要求7所述的液晶面板，其中，
    在所述像素电极上形成第一贯穿孔，所述第一贯穿孔从所述像素电极贯穿至所述薄膜晶体管，并在所述像素电极和所述第一贯穿孔的表层铺设金属层以形成所述数据线，使所述数据线连接所述像素电极。
  11. 如权利要求10所述的液晶面板，其中，
    在所述像素电极上形成第二贯穿孔，所述第二贯穿孔从所述像素电极贯穿至所述存储电容，并在所述像素电极和所述第二贯穿孔的表层铺设金属层，以连接所述像素电极和所述存储电容。
  12. 如权利要求11所述的液晶面板，其中，所述像素电极还包括至少一个第二过渡像素区域，位于所述第一贯穿孔或/和所述第二贯穿孔的一侧或两侧，第二过渡区域的第四色阻厚度为从所述第一色阻厚度或第二色阻厚度开始递减的渐变区间。
  13. 如权利要求12所述的液晶面板，其中，所述第二过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
  14. 如权利要求7所述的液晶面板，其中，所述薄膜晶体管包括：
    栅电极，连接于所述扫描线；
    源电极，连接于所述连接于所述数据线，接收电子输入；
    漏电极，连接于所述像素电极，进行电子输出；以及
    有源层，由铟镓锌氧化物材料制成，用于形成导电沟道。
  15. 一种液晶面板的制备方法，其中包括如下步骤：
    制备第一基板；
    在所述第一基板上生成薄膜晶体管、存储电容和像素电极，所述像素电极包括至少一个主像素区域及至少一个亚像素区域，所述主像素的第一色阻厚度大于所述亚像素的第二色阻厚度；
    制备第二基板；以及
    在所述第一基板与所述第二基板之间填充液晶分子，用以形成液晶层。
  16. 如权利要求15所述的制备方法，其中在生成像素电极的步骤中，还包括：
    生成至少一个第一过渡像素区域，位于所述主像素区域与所述亚像素区域之间，第一过渡像素区域的第三色阻的厚度介于所述第一色阻厚度与所述第二色阻厚度之间；和/或
    生成至少一个第二过渡像素区域，位于所述薄膜晶体管与所述像素电极之间的第一贯穿孔和/或所述存储电容与所述像素电极之间的第二贯穿孔的两侧，第二过渡区域的第四色阻厚度为从所述第一色阻厚度或所述第二色阻厚度开始递减的渐变区间。
PCT/CN2014/094585 2014-12-17 2014-12-23 液晶面板及其制备方法 Ceased WO2016095243A1 (zh)

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Publication number Priority date Publication date Assignee Title
CN108780256B (zh) * 2016-03-15 2022-10-18 株式会社半导体能源研究所 显示装置、模块及电子设备
CN106200100B (zh) * 2016-09-05 2019-12-06 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置
CN111665668B (zh) * 2019-03-08 2023-07-07 夏普株式会社 显示装置
CN109767742A (zh) * 2019-03-26 2019-05-17 深圳市华星光电技术有限公司 液晶显示面板及液晶显示装置
CN114038436B (zh) 2021-11-23 2023-06-27 深圳市华星光电半导体显示技术有限公司 液晶显示面板及显示终端
CN114527596B (zh) * 2022-03-10 2023-10-03 Tcl华星光电技术有限公司 显示面板及移动终端
CN115421334B (zh) * 2022-09-20 2024-09-20 惠科股份有限公司 阵列基板、阵列基板的制备方法、显示面板及显示器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0772473A (ja) * 1993-09-01 1995-03-17 Sony Corp カラー液晶表示装置
US20020113927A1 (en) * 2001-02-22 2002-08-22 Kyoung-Su Ha Transflective liquid crystal display device and manufacturing method for the same
CN101634789A (zh) * 2009-08-25 2010-01-27 友达光电股份有限公司 像素结构以及像素结构的制作方法
CN102385196A (zh) * 2011-10-25 2012-03-21 深圳市华星光电技术有限公司 液晶显示面板及其形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101041970B1 (ko) * 2004-06-11 2011-06-16 삼성전자주식회사 액정 표시 장치
JP5536986B2 (ja) * 2008-04-30 2014-07-02 三菱電機株式会社 液晶表示装置
CN102402042A (zh) * 2011-11-02 2012-04-04 深圳市华星光电技术有限公司 液晶显示装置及其制造方法
TWI513002B (zh) * 2012-06-05 2015-12-11 群康科技(深圳)有限公司 薄膜電晶體基板以及顯示器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0772473A (ja) * 1993-09-01 1995-03-17 Sony Corp カラー液晶表示装置
US20020113927A1 (en) * 2001-02-22 2002-08-22 Kyoung-Su Ha Transflective liquid crystal display device and manufacturing method for the same
CN101634789A (zh) * 2009-08-25 2010-01-27 友达光电股份有限公司 像素结构以及像素结构的制作方法
CN102385196A (zh) * 2011-10-25 2012-03-21 深圳市华星光电技术有限公司 液晶显示面板及其形成方法

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