CN104503159B - 液晶面板及其制备方法 - Google Patents

液晶面板及其制备方法 Download PDF

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CN104503159B
CN104503159B CN201410789898.5A CN201410789898A CN104503159B CN 104503159 B CN104503159 B CN 104503159B CN 201410789898 A CN201410789898 A CN 201410789898A CN 104503159 B CN104503159 B CN 104503159B
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liquid crystal
pixel electrode
color blocking
pixel region
substrate
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CN104503159A (zh
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熊源
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/417,078 priority patent/US9507217B2/en
Priority to PCT/CN2014/094585 priority patent/WO2016095243A1/zh
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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/134309—Electrodes characterised by their geometrical arrangement
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    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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    • G02—OPTICS
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Abstract

本发明公开了一种液晶面板及其制备方法，包括第一基板、第二基板、及配置于所述第一基板与第二基板之间的液晶层，所述第一基板上配置有像素电极、薄膜晶体管和存储电容。像素电极包括至少一个主像素区域及至少一个亚像素区域，其中主像素区域的第一色阻厚度大于亚像素区域的第二色阻厚度；薄膜晶体管，分别连接于数据线、扫描线和像素电极；存储电容，连接于所述像素电极。本发明通过设置主像素区域、亚像素区域的不同色阻厚度，使其在相同驱动电压下对液晶层产生不同的驱动效率，从而改善其组装的显示设备的大视角显示效果。

Description

液晶面板及其制备方法
技术领域
本发明涉及显示领域，尤其涉及一种液晶面板及其制备方法。
背景技术
传统的液晶显示面板的可视角度较小，当观看者位于液晶显示面板的侧面时，便无法清楚地看见液晶显示面板所呈现的影像。因此近几年业界纷纷投入具备广视角功能的液晶显示面板的研究与生产。
广视角功能常用技术包括：通过特殊图案的像素电极，使得当施加电场于液晶显示面板时，不同区域的液晶分子具有不同方向的倾斜角度，进而实现广视角的目的。像素电极一般需通过贯穿孔及连接图案与主动元件电性连接。然而因连接图案会将一部分的像素电极垫高，如此的结构会使得连接图案附近的液晶分子的倾倒方向产生错乱。然而，一旦液晶分子产生非预期中的倾倒方向，反而会降低液晶显示面板的透光率，影响显示效果，无法实现稳定的广角功能。
发明内容
有鉴于此，本发明提供一种液晶面板及其制备方法，以解决现有技术中透光率低、液晶易倾倒而导致不能提供稳定广视角功能的技术问题。
为解决上述技术问题，本发明实施例提供以下技术方案：
一种液晶面板，包括第一基板、第二基板、及配置于所述第一基板与第二基板之间的液晶层，第一基板上设置有：
像素电极，包括至少一个主像素区域及至少一个亚像素区域，其中主像素区域的第一色阻厚度大于亚像素区域的第二色阻厚度；
薄膜晶体管，分别连接于数据线、扫描线和像素电极；以及
存储电容，连接于所述像素电极。
优选地，所述像素电极还包括至少一个第一过渡像素区域，位于所述主像素区域与所述亚像素区域之间，第一过渡像素区域的第三色阻厚度位于所述第一色阻厚度与所述第二色阻厚度之间，且所述第三色阻为一预设高度或一渐变的高度区间。
优选地，所述第一过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
优选地，在所述像素电极上形成第一贯穿孔，所述第一贯穿孔从所述像素电极贯穿至所述薄膜晶体管，并在所述像素电极和所述第一贯穿孔的表层铺设金属层以形成所述数据线，使所述数据线连接所述像素电极。
优选地，在所述像素电极上形成第二贯穿孔，所述第二贯穿孔从所述像素电极贯穿至所述存储电容，并在所述像素电极和所述第二贯穿孔的表层铺设金属层，以连接所述像素电极和所述存储电容。
优选地，所述像素电极还包括至少一个第二过渡像素区域，位于所述第一贯穿孔或/和所述第二贯穿孔的一侧或两侧，第二过渡区域的第四色阻厚度为从所述第一色阻厚度或第二色阻厚度开始递减的渐变区间。
优选地，所述第二过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
优选地，所述薄膜晶体管包括：
栅电极，连接于所述扫描线；
源电极，连接于所述连接于所述数据线，接收电子输入；漏电极，连接于所述像素电极，进行电子输出；以及
有源层，由铟镓锌氧化物材料制成，用于形成导电沟道。
为解决上述技术问题，本发明实施例还提供以下技术方案：
一种液晶面板的制备方法，包括如下步骤：
制备第一基板；
在所述第一基板上生成薄膜晶体管、存储电容和像素电极，所述像素电极包括至少一个主像素区域及至少一个亚像素区域，所述主像素的第一色阻厚度大于所述亚像素的第二色阻厚度；
制备第二基板；以及
在所述第一基板与所述第二基板之间填充液晶分子，用以形成液晶层。
优选地，在生成像素电极的步骤中，还包括：
生成至少一个第一过渡像素区域，位于所述主像素区域与所述亚像素区域之间，第一过渡像素区域的第三色阻的厚度介于所述第一色阻厚度与所述第二色阻厚度之间；和/或
生成至少一个第二过渡像素区域，位于所述薄膜晶体管与所述像素电极之间的第一贯穿孔和/或所述存储电容与所述像素电极之间的第二贯穿孔的两侧，第二过渡区域的第四色阻厚度为从所述第一色阻厚度或所述第二色阻厚度开始递减的渐变区间。
相对于现有技术，本发明中的液晶面板及其制备方法通过设置主像素区域、亚像素区域的不同色阻厚度，使其在相同驱动电压下对液晶层产生不同的驱动效率，从而改善其组装的显示设备的广视角显示效果。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面对实施例中所需要使用的附图作简单的介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获取其他的附图。
图1为本发明实施例一中液晶面板的剖面示意图；
图2A～图2D分别为本发明实施例一中不同形状的像素电极的结构示意图；
图3为本发明实施例一中薄膜晶体管的等效电路示意图；
图4是本发明实施例一中薄膜晶体管的剖面示意图；
图5是本发明实施例二中液晶面板的制备方法的流程图；
图6是本发明实施例二中曝光程序中的示意图；
图7A和图7B分别是本发明实施例二中光罩的结构示意图。
具体实施方式
请参照附图中的图式，其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本发明具体实施例，其不应被视为限制本发明未在此详述的其它具体实施例。
实施例一
如图1所示，为本发明提供的液晶面板的剖面示意图。所示液晶面板包括：第一基板1、第二基板2、及配置于所述第一基板1与第二基板2之间的液晶层3。其中，第一基板1上还包括：薄膜晶体管11、存储电容12和像素电极13。
其中，像素电极13覆盖在薄膜晶体管11与存储电容12之上。
像素电极13，包括至少一个主像素区域131及至少一个亚像素区域132，还可以包括至少一个第一过渡像素区域133、和/或至少一个第二过渡像素区域134。
其中，主像素区域131的第一色阻厚度大于亚像素区域132的第二色阻厚度，使得主像素区域131上液晶层所形成的第一盒厚d1小于所述亚像素区域132上液晶层所形成的第二盒厚d2。
可以理解的是：液晶的盒厚与液晶层3的双直射率及螺距之间有一个最佳匹配值，在同一液晶面板中不同的匹配值，会导致液晶层不同的响应效率。在本发明中，主像素区域131的盒厚比亚像素区域132的盒厚要薄一些，差异至少大于0.2微米，以保证主像素区域131对应的液晶分子比亚像素区域132对应的液晶分子效率有明显差异。可以理解的是：请参阅图2A～图2D所示，在主像素区域131与亚像素区域132之间可能为直接过渡(如图2A)，也可能包括至少一个第一过渡像素区域133，位于所述主像素区域131与所述亚像素区域132之间，所述第一过渡像素区域133的第三色阻的厚度介于主像素区域131的第一色阻厚度与亚像素区域132的第二色阻厚度之间，且所述第三色阻为一预设高度或一渐变的高度区间。其中，所述预设高度为介于第一色阻厚度与第二色阻厚度之间，不再赘述。而渐变高度区间，如三角形(如图2B)、阶梯形(如图2C)、或凸起或凹进的圆弧形(如图2D)中的一种。
此外，需要说明的是：色阻厚度是指从基板到色阻顶端的高度，如果部分色阻的底部覆盖了部分薄膜晶体管或存储电容，本文所指的色阻厚度亦是指从基板上起算。
其中像素电极13中的色阻，是将红、绿、蓝(RGB)三层彩色滤光层叠层涂布在薄膜晶体管11的上方形成的。且，色阻与薄膜晶体管共同构成彩色滤光片叠加薄膜晶体管(COA，Color Filter On Array)结构。由于色阻是直接形成于薄膜晶体管11上，因此不会产生对位误差。因此，这种COA结构本身即具有较佳的分辨率且其像素的开口率亦较高。
如图3所示，为薄膜晶体管的效果示意图，所示薄膜晶体管11的源电级S、栅电极G、漏电极D分别连接于数据线14、扫描线15、像素电极13以及存储电容12，用于控制像素电极13的开关切换。
同时结合图3与图4，所述薄膜晶体管11包括：
栅电极G(Gate electrode)，连接于所述扫描线15，所述栅电极G主要采用金属材质制成；
源电极S(Source electrode)，设置于所述有源层Y上，连接于所述所述数据线14，接收电子输入；
漏电极D(Drain electrode)，设置于所述有源层Y上，连接于所述像素电极，进行电子输出，以控制所述像素电极13的开关切换。
绝缘层，铺设于所述栅电极G上；
有源层Y，铺设于所述绝缘层上，由铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)材料制成，用于形成导电沟道。可以理解的是：以铟镓锌氧化物(IGZO)为代表的透明非晶氧化物半导体(TAOS)具有迁移率高、均一性好、透明等优点，可以改进薄膜晶体管的驱动效率。
液晶面板同一时间一次起动一条水平扫描线15，以将该条扫描线15上的所有薄膜晶体管11打开，而经由垂直数据线14送入对应的视频信号，以将像素电极13充电至适当的电压。接着关闭薄膜晶体管11，直到下次再重新写入信号，其间使得电荷保存在存储电容上12；此时再起动次一条水平扫描线15，送入其对应的视频信号。如此依序将整个画面的视讯数据写入，再重新自第一条重新写入信号(一般此重复的频率为60～70Hz)。
此外，如图1所示，在所述像素电极13上形成第一贯穿孔41，所述第一贯穿孔41从所述像素电极13贯穿至所述薄膜晶体管11，并在所述像素电极13和所述第一贯穿孔41的表层铺设金属层以形成所述数据线14，使所述数据线14连接所述像素电极13，以控制液晶层中液晶分子的转动。
在所述像素电极13上形成第二贯穿孔42，所述第二贯穿孔42从所述像素电极13贯穿至所述存储电容12，并在所述像素电极13和所述第二贯穿孔42的表层铺设金属层，以连接所述像素电极13和所述存储电容12。
可以理解的是：第二过渡像素区域134，位于第一贯穿孔41和/或第二贯穿孔42的两侧，第二过渡区域134的第四色阻厚度为从所述第一色阻厚度或第二色阻厚度开始递减的渐变区间。且，所述第二过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
本发明的液晶面板通过主像素区域131与亚像素区域132的色阻厚度不同，其上盒厚内液晶的响应速度亦不同，因此，当施加相同电压时，可呈现出不同的影响效率，提高光穿透度，从而改善其组装的显示设备的大视角显示效果。
实施例二
如图5所示，为液晶面板的制备方法的流程图。主要包括如下步骤：
在步骤S501中，制备第一基板。
在步骤S502中，在所述第一基板上生成薄膜晶体管、存储电容和像素电极。其中，像素电极13覆盖在薄膜晶体管11与存储电容12之上。像素电极13，包括至少一个主像素区域131及至少一个亚像素区域132，还可以包括至少一个第一过渡像素区域133、和/或至少一个第二过渡像素区域134。
其中，主像素区域131的第一色阻厚度大于亚像素区域132的第二色阻厚度。所述第一过渡像素区域133的第三色阻的厚度介于第一色阻厚度与第二色阻厚度之间。第二过渡区域134的第四色阻厚度为从所述第一色阻厚度或第二色阻厚度开始递减的渐变区间。其各类变化请参阅图2A～图2D所示，此处不再赘述。
具体而言，至少包括如图6中的曝光的工序示意图，以形成所述不同的色阻厚度：
请同时参阅图7A和图7B的光罩示例图。所述光罩7包括透光区71、遮光区72、以及部分透光区73或74。其中，透光区71对应第一贯穿孔41和/或第二贯穿孔42，遮光区72对应主像素区域131、以及液晶盒的四边由框胶进行密封的部分，而部分透光区73则对应亚像素区域132、第一过渡像素区域133、以及第二过渡像素区域134。其中，部分透光区73或74的本质为透光区71与遮光区72呈条状、网状交替设置。
可以理解的是：通过所述光罩的设计，在曝光及后续的显影工序中，可以实现所述主像素区域、亚像素区域、以及第一过渡区域、第二过渡过渡区域的色阻厚度。
本发明的显示面板，通过主像素区域131与亚像素区域132的色阻厚度不同，其使盒厚内液晶的响应速度亦不同，因此，当施加相同电压时，可呈现出不同的影响效率，提高光穿透度，从而改善其组装的显示设备的大视角显示效果。
在步骤S503中，制备第二基板。
在步骤S504中，在所述第一基板与所述第二基板之间填充液晶分子，用以形成液晶层。
本发明所制备的液晶面板通过主像素区域与亚像素区域的厚度不同，其上盒厚内液晶的响应速度亦不同，因此，当施加相同电压时，可呈现出不同的影响效率，提高光穿透度，从而改善其组装的显示设备的大视角显示效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通测试人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

1.一种液晶面板，包括第一基板、第二基板、及配置于所述第一基板与第二基板之间的液晶层，其特征在于，所述液晶面板还包括位于第一基板的：
像素电极，包括至少一个主像素区域及至少一个亚像素区域，其中主像素区域的第一色阻厚度大于亚像素区域的第二色阻厚度；使所述主像素区域和所述亚像素区域在相同电压下对液晶层产生不同的驱动效率；
薄膜晶体管，分别连接于数据线、扫描线和像素电极；以及
存储电容，连接于所述像素电极。
2.如权利要求1所述的液晶面板，其特征在于，所述像素电极还包括至少一个第一过渡像素区域，位于所述主像素区域与所述亚像素区域之间，第一过渡像素区域的第三色阻厚度位于所述第一色阻厚度与所述第二色阻厚度之间，且所述第三色阻为一预设高度或一渐变的高度区间。
3.如权利要求2所述的液晶面板，其特征在于，所述第一过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
4.如权利要求1所述的液晶面板，其特征在于：
在所述像素电极上形成第一贯穿孔，所述第一贯穿孔从所述像素电极贯穿至所述薄膜晶体管，并在所述像素电极和所述第一贯穿孔的表层铺设金属层以形成所述数据线，使所述数据线连接所述像素电极。
5.如权利要求4所述的液晶面板，其特征在于：
在所述像素电极上形成第二贯穿孔，所述第二贯穿孔从所述像素电极贯穿至所述存储电容，并在所述像素电极和所述第二贯穿孔的表层铺设金属层，以连接所述像素电极和所述存储电容。
6.如权利要求5所述的液晶面板，其特征在于，所述像素电极还包括至少一个第二过渡像素区域，位于所述第一贯穿孔或/和所述第二贯穿孔的一侧或两侧，第二过渡区域的第四色阻厚度为从所述第一色阻厚度或第二色阻厚度开始递减的渐变区间。
7.如权利要求6所述的液晶面板，其特征在于，所述第二过渡像素区域呈三角形、阶梯形、或圆弧形中的一种。
8.如权利要求1所述的液晶面板，其特征在于，所述薄膜晶体管包括：
栅电极，连接于所述扫描线；
源电极，连接于所述连接于所述数据线，接收电子输入；
漏电极，连接于所述像素电极，进行电子输出；以及
有源层，由铟镓锌氧化物材料制成，用于形成导电沟道。
9.一种液晶面板的制备方法，其特征在于，包括如下步骤：
制备第一基板；
在所述第一基板上生成薄膜晶体管、存储电容和像素电极，所述像素电极包括至少一个主像素区域及至少一个亚像素区域，所述主像素的第一色阻厚度大于所述亚像素的第二色阻厚度；使所述主像素区域和所述亚像素区域在相同电压下对液晶层产生不同的驱动效率；
制备第二基板；以及
在所述第一基板与所述第二基板之间填充液晶分子，用以形成液晶层。
10.如权利要求9所述的制备方法，其特征在于，在生成像素电极的步骤中，还包括：
生成至少一个第一过渡像素区域，位于所述主像素区域与所述亚像素区域之间，第一过渡像素区域的第三色阻的厚度介于所述第一色阻厚度与所述第二色阻厚度之间；和/或
生成至少一个第二过渡像素区域，位于所述薄膜晶体管与所述像素电极之间的第一贯穿孔和/或所述存储电容与所述像素电极之间的第二贯穿孔的两侧，第二过渡区域的第四色阻厚度为从所述第一色阻厚度或所述第二色阻厚度开始递减的渐变区间。
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