WO2016090732A1 - 一种阵列基板及显示装置 - Google Patents

一种阵列基板及显示装置 Download PDF

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WO2016090732A1
WO2016090732A1 PCT/CN2015/070934 CN2015070934W WO2016090732A1 WO 2016090732 A1 WO2016090732 A1 WO 2016090732A1 CN 2015070934 W CN2015070934 W CN 2015070934W WO 2016090732 A1 WO2016090732 A1 WO 2016090732A1
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sub
electrode
pixel
voltage dividing
conductive structure
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French (fr)
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陈政鸿
王醉
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
    • G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
    • G02F1/1393—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent the birefringence of the liquid crystal being electrically controlled, e.g. ECB-, DAP-, HAN-, PI-LC cells

Definitions

  • the present invention relates to the field of display technologies, and in particular to an array substrate and a display device.
  • a color shift phenomenon tends to occur, that is, the image viewed by the user at a large viewing angle is deviated from the color of the image viewed from the front viewing angle.
  • the sub-pixel units of the conventional liquid crystal display panel are an entire area, and different viewing angles can only see the long axis or the short axis of the liquid crystal molecules.
  • the liquid crystal molecules have anisotropy and different refractive indices in different directions, so that the image viewed from a large viewing angle and the image in front view have a color shift.
  • each sub-pixel unit can be divided into two regions of a main pixel region and a sub-pixel region, and a voltage dividing capacitor is further added.
  • the main pixel electrode 1 and the sub-pixel electrode 2 are first charged to the same potential, and then the potential of the sub-pixel electrode 2 is lowered by the voltage dividing capacitor 3.
  • the different potentials make the liquid crystal molecules in the two regions turn differently, thereby achieving the purpose of improving the large-view role of the VA liquid crystal display panel.
  • the voltage dividing capacitor 3 specifically includes a voltage dividing terminal electrode 31 formed of a transparent electrode in the same layer as the main pixel electrode 1 and the subpixel electrode 2, a common terminal electrode 32, and an insulating layer therebetween.
  • the voltage dividing terminal electrode 31 is not in contact with the subpixel electrode 2 to achieve insulation between the two.
  • the inventors have found that a problem of residual transparent electrodes may occur in the production of an actual liquid crystal display panel, resulting in short-circuiting of the divided-end terminal electrode 31 and the sub-pixel electrode 2.
  • the commonly used detection method is to simultaneously deliver the gate driving signals to all the scanning lines, so that all the sub-pixel units are simultaneously charged, so that the brightness of the main pixel area and the sub-pixel area are equal. Obviously, this detection method cannot effectively detect the problem that the voltage dividing terminal electrode 31 and the sub-pixel electrode 2 are short-circuited, resulting in a decrease in the yield of the liquid crystal display panel and an increase in cost.
  • An object of the present invention is to provide an array substrate and a display device to solve the technical problem that the prior art cannot effectively detect a short circuit between the divided terminal electrode and the sub-pixel electrode.
  • a first aspect of the present invention provides an array substrate, the array substrate includes a plurality of arrays of sub-pixel units, each of the sub-pixel units including a main pixel area, a sub-pixel area, and a voltage dividing capacitor;
  • the sub-pixel region includes a sub-pixel electrode
  • the voltage dividing capacitor includes a voltage dividing end electrode and a common terminal electrode
  • a transparent conductive structure is disposed between the sub-pixel electrode and the voltage dividing end electrode, and the transparent conductive structure
  • the common terminal electrode is electrically connected, and the sub-pixel electrode, the voltage dividing terminal electrode and the transparent conductive structure are located in the same layer and insulated from each other.
  • an insulating layer is disposed between the transparent conductive structure and the common terminal electrode, and the transparent conductive structure is electrically connected to the common terminal electrode through a via hole on the insulating layer.
  • Each of the sub-pixel units is provided with a driving scan line, a divided scan line, and a data line.
  • each sub-pixel unit is further provided with a first switch tube, a second switch tube and a third switch tube;
  • a gate of the first switch tube is connected to the driving scan line, a source is connected to the data line, and a drain is connected to the main pixel electrode;
  • a gate of the second switch tube is connected to the driving scan line, a source is connected to the data line, and a drain is connected to the sub-pixel electrode;
  • the gate of the third switching transistor is connected to the voltage dividing scan line, the source is connected to the sub-pixel electrode, and the drain is connected to the voltage dividing terminal electrode.
  • the first switch tube, the second switch tube, and the third switch tube are thin film transistors.
  • the distance between the sub-pixel region and the voltage dividing terminal electrode is at least 4 micrometers.
  • the sub-pixel electrode, the voltage dividing terminal electrode and the transparent conductive structure are formed in the same patterning process.
  • the area ratio of the sub-pixel region to the main pixel region is 6:4, 5:5, or 4:6.
  • an array substrate includes a plurality of sub-pixel units arranged in an array, and each sub-pixel unit includes a main pixel area and a second Pixel area and voltage divider capacitor.
  • a transparent conductive structure electrically connected to the common terminal electrode is disposed between the sub-pixel electrode and the voltage dividing terminal electrode, and the sub-pixel electrode, the voltage dividing terminal electrode and the transparent conductive structure are located in the same layer and are insulated from each other.
  • the voltage dividing terminal electrode and the transparent conductive structure may be short-circuited, or the transparent conductive structure and the sub-pixel electrode may be short-circuited, or the voltage dividing terminal electrode, the transparent conductive structure and the sub-pixel electrode may be short-circuited.
  • the potential of the pixel electrode is equal to the potential of the common terminal electrode.
  • a second aspect of the present invention provides a display device including a color filter substrate and the above array substrate.
  • the display device is a vertical alignment type display device.
  • FIG. 1 is a schematic structural view of a sub-pixel unit of a prior art array substrate
  • FIG. 2 is a schematic structural diagram of a sub-pixel unit of an array substrate according to an embodiment of the present invention
  • FIG. 3 is an equivalent circuit diagram of a sub-pixel unit of an array substrate according to an embodiment of the present invention.
  • An array substrate provided by an embodiment of the present invention includes a plurality of sub-pixel units arranged in an array.
  • Each of the sub-pixel units includes a main pixel region, a sub-pixel region, and a voltage dividing capacitor 3.
  • the main pixel region includes a main pixel electrode 1
  • the sub-pixel region includes a sub-pixel electrode 2
  • the voltage dividing capacitor 3 includes a divided terminal electrode 31 and a common terminal electrode 32.
  • a transparent conductive structure 4 is disposed between the sub-pixel electrode 2 and the voltage dividing end electrode 31.
  • the transparent conductive structure 4 is connected to the common terminal electrode 32.
  • the sub-pixel electrode 2, the divided terminal electrode 31 and the transparent conductive structure 4 are located in the same layer and are mutually insulation.
  • the sub-pixel unit is provided with a first switch tube T1 and a second switch tube T2, the first switch tube T1 is corresponding to the main pixel area, and the second switch tube T2 is corresponding to the sub-pixel area.
  • each of the sub-pixel units is provided with a drive scan line (Gate1), a divided voltage scan line (Gate2), a common terminal electrode (Com), and a data line (Data).
  • the driving scan line (Gate1), the divided voltage scan line (Gate2), and the common end electrode (Com) are located in the same layer, and can be formed synchronously in the same patterning process.
  • the driving scan line and the divided scan line are arranged side by side between the main pixel area and the sub-pixel area to drive the scan line driver
  • the divided scanning line drives the second switching transistor T2 corresponding to the sub-pixel region.
  • both T1 and T2 are preferably Thin Film Transistors (TFTs).
  • TFTs Thin Film Transistors
  • the gate of T1 is connected to drive the scan line, the source is connected to the data line, the drain is connected to the main pixel electrode 1; the gate of T2 is connected to the divided scan line, the source is connected to the data line, and the drain is connected to the sub-pixel electrode 2.
  • the main pixel electrode 1 can form a liquid crystal capacitor Clc1 with a common electrode on the color filter substrate, and the overlapping portion of the main pixel electrode 1 and the common terminal electrode 11 form a storage capacitor Cst1; the sub-pixel electrode 2 can be connected with a common electrode on the color filter substrate.
  • the liquid crystal capacitor Clc2 is formed, and the overlapping portion of the sub-pixel electrode 2 and the common terminal electrode 32 forms the storage capacitor Cst2.
  • a third switch tube T3 may be disposed in each sub-pixel unit, as shown in FIG.
  • the third switching transistor T3 is also preferably a thin film transistor.
  • Each of the sub-pixel units is further provided with a voltage dividing capacitor Cst3, and the voltage dividing capacitor Cst3 includes a voltage dividing terminal electrode 31 and a common terminal electrode 32.
  • the driving scan line first receives the gate driving signal, and turns on its corresponding T1 and T2.
  • T1 and T2 access the data signal from the data line from the source, and transmit the data signal to the main pixel electrode 1 and the sub-pixel electrode 2 via T1 and T2, so that Clc1, Cst1, Clc2 and Cst2 have equal voltages.
  • the gate driving signal for driving the scanning line disappears, and the divided scanning line receives the gate driving signal.
  • T1 and T2 are turned off, T3 is turned on, and Cst3 divides a part of the data signal on the sub-pixel electrode 2 through the turned-on T3, lowering the potential on the sub-pixel electrode 2, and lowering the voltages of Clc2 and Cst2, and Clc1
  • the voltage of Cst1 remains unchanged.
  • the voltage of Clc2 is significantly lower than the voltage of Clc1, so that the deflection angles of the liquid crystal molecules in the main pixel region and the sub-pixel region are different, thereby improving the phenomenon of large-view character deviation of the VA type display device.
  • the transparent conductive structure 4 disposed between the voltage dividing end electrode 31 and the sub-pixel electrode 2 is further included, and the transparent conductive structure 4 is electrically connected to the common terminal electrode 32.
  • the voltage dividing terminal electrode 31, the transparent conductive structure 4, and the sub-pixel electrode 2 are the same layer, transparent conductive materials such as Indium Tin Oxide (ITO) and Indium Gallium Zinc Oxide (Indium Gallium Zinc Oxide, etc.) are used.
  • a transparent conductive material such as IGZO). Therefore, the voltage dividing terminal electrode 31, the transparent conductive structure 4, and the sub-pixel electrode 2 are usually formed in the same patterning process. If the transparent conductive material remains during the manufacturing process, the voltage dividing terminal electrode 31 and the transparent conductive structure 4 may be short-circuited, or the transparent conductive structure 4 and the sub-pixel electrode 2 may be short-circuited, or the voltage-dividing terminal electrode 31 may be transparent.
  • the conductive structure 4 and the sub-pixel electrode 2 are short-circuited. Regardless of the short circuit condition, the transparent conductive structure 4 electrically connected to the common terminal electrode 32 will make the potential of the sub-pixel electrode 2 equal to the potential of the common terminal electrode 32.
  • the sub-pixel electrode 2 and the common electrode on the color filter substrate form a liquid crystal capacitor Clc2. At this time, the potentials of the electrodes on both sides of the liquid crystal capacitor Clc2 are equal, and the liquid crystal molecules located in the corresponding regions of the sub-pixel region cannot be driven to be deflected. The pixel area does not emit light, causing the sub-pixel unit to exhibit a dark spot condition.
  • the existing detection method requires all sub-pixel units to be simultaneously charged. Detect using existing inspection methods At the same time, the brightness of the sub-pixel unit having the short-circuit problem will be lower than that of the remaining sub-pixel units, showing a dark spot condition.
  • the sub-pixel unit exhibiting a dark spot condition can be easily detected, and the engineer can repair the sub-pixel unit of the dark spot in time, thereby improving the yield of the liquid crystal display panel and reducing the cost of the liquid crystal display panel.
  • an insulating layer is disposed between the transparent conductive structure 4 and the common terminal electrode 32. Therefore, as shown in FIG. 2, in order to achieve electrical connection between the transparent conductive structure 4 and the common terminal electrode 32, the insulating layer is provided with a via hole 5 through which the transparent conductive structure 4 is electrically connected to the common terminal electrode 32.
  • the transparent conductive structure 4 is located between the sub-pixel electrode 2 and the voltage dividing terminal electrode 31, in order to ensure insulation between the sub-pixel electrode 2, the transparent conductive structure 4 and the voltage dividing terminal electrode 31, the sub-pixel electrode
  • the distance between the 2 and the divided terminal electrodes 31 should be at least 4 ⁇ m.
  • the area of the sub-pixel electrode 2 occupies 60% of the area of the open area of the sub-pixel unit
  • the area of the main pixel electrode 1 occupies 40% of the area of the open area of the sub-pixel unit, that is, the area ratio of the sub-pixel electrode 2 to the main pixel electrode 1. It is 6:4.
  • the area ratio of the sub-pixel electrode 2 to the main pixel electrode 1 may be 5:5, 4:6, etc., which is not limited in the embodiment of the present invention.
  • an array substrate in an embodiment of the present invention, includes a plurality of sub-pixel units arranged in an array, and each sub-pixel unit includes a main pixel area, a sub-pixel area, and a voltage dividing capacitor.
  • a transparent conductive structure electrically connected to the common terminal electrode is disposed between the sub-pixel electrode and the voltage dividing terminal electrode, and the sub-pixel electrode, the voltage dividing terminal electrode and the transparent conductive structure are located in the same layer and are insulated from each other.
  • the voltage dividing terminal electrode and the transparent conductive structure may be short-circuited, or the transparent conductive structure and the sub-pixel electrode may be short-circuited, or the voltage dividing terminal electrode, the transparent conductive structure and the sub-pixel electrode may be short-circuited.
  • the potential of the pixel electrode is equal to the potential of the common terminal electrode.
  • the present invention further provides a display device, preferably a VA type display device, which may specifically be a liquid crystal television, a liquid crystal display, a mobile phone, a tablet computer or the like.
  • the display device includes a color filter substrate and the array substrate provided by the above embodiments of the present invention.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Geometry (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

一种阵列基板包括多个阵列排布的子像素单元，各子像素单元包括主像素区域、次像素区域和分压电容（3）；次像素区域包括次像素电极（2），分压电容（3）包括分压端电极（31）和公共端电极（32），次像素电极（2）和分压端电极（31）之间设置有透明导电结构（4），透明导电结构（4）电连接公共端电极（32），次像素电极（2）、分压端电极（31）和透明导电结构（4）位于同一图层且相互绝缘。

Description

一种阵列基板及显示装置
本申请要求享有2014年12月10日提交的名称为“一种阵列基板及显示装置”的中国专利申请CN201410753408.6的优先权，其全部内容通过引用并入本文中。
技术领域
本发明涉及显示技术领域，具体地说，涉及一种阵列基板及显示装置。
背景技术
传统的液晶显示面板在大视角观看时，往往会出现色偏的现象，即用户在大视角观看到的图像与正视角观看到的图像的颜色有偏差。这是因为传统的液晶显示面板的各子像素单元为一整个区域，不同的视角只能看到液晶分子的长轴，或者短轴。而液晶分子具有各向异性，不同的方向折射率不同，因此会出现大视角观看到的图像与正视的图像具有色偏的现象。
为了改善垂直取向型(Vertical Alignment，简称VA)液晶显示面板在大视角出现的色偏现象，可将每一子像素单元分为主像素区域和次像素区域两个区域，再增设分压电容。在显示时，首先将主像素电极1和次像素电极2充电到相同电位，之后利用分压电容3降低次像素电极2的电位。不同的电位使得两个区域的液晶分子转向分布不同，从而实现改善VA液晶显示面板大视角色偏的目的。
如图1所示，分压电容3具体包括与主像素电极1和次像素电极2同层的透明电极形成的分压端电极31、公共端电极32以及位于两者之间的绝缘层。为了保证分压电容3能够正常工作，分压端电极31与次像素电极2不接触以实现两者的绝缘。但发明人发现，实际的液晶显示面板的生产中可能会出现透明电极残留的问题，导致分压端电极31和次像素电极2短路。这将使得存在短路问题的子像素单元的次像素区域的亮度与主像素区域一致，在液晶显示面板上呈现微亮点现象。而通常采用的检测方法是向所有的扫描线同时输送栅极驱动信号，令所有子像素单元同时充电，使得主像素区域和次像素区域的亮度都相等。显然，这种检测方法无法有效地检测出分压端电极31和次像素电极2短路的问题，导致液晶显示面板的良率下降，成本增加。
发明内容
本发明的目的在于提供一种阵列基板及显示装置，以解决现有技术无法有效地检测出分压端电极和次像素电极短路的技术问题。
本发明第一方面提供了一种阵列基板，该阵列基板包括多个阵列排布的子像素单元，各子像素单元包括主像素区域、次像素区域和分压电容；
所述次像素区域包括次像素电极，所述分压电容包括分压端电极和公共端电极，所述次像素电极和所述分压端电极之间设置有透明导电结构，所述透明导电结构电连接所述公共端电极，所述次像素电极、所述分压端电极和所述透明导电结构位于同一图层且相互绝缘。
其中，所述透明导电结构与所述公共端电极之间设置有绝缘层，所述透明导电结构通过所述绝缘层上的过孔电连接所述公共端电极。
其中，各子像素单元设置有驱动扫描线、分压扫描线和数据线。
其中，各子像素单元中还设置有第一开关管，第二开关管和第三开关管；
所述第一开关管的栅极连接所述驱动扫描线，源极连接所述数据线，漏极连接所述主像素电极；
所述第二开关管的栅极连接所述驱动扫描线，源极连接所述数据线，漏极连接所述次像素电极；
所述第三开关管的栅极连接所述分压扫描线，源极连接所述次像素电极，漏极连接所述分压端电极。
其中，所述第一开关管、所述第二开关管和所述第三开关管为薄膜晶体管。
其中，所述次像素区域和所述分压端电极之间的距离至少为4微米。
其中，所述次像素电极、所述分压端电极和所述透明导电结构在同一次构图工艺中形成。
其中，所述次像素区域和所述主像素区域的面积比为6∶4、5∶5或4∶6。
本发明带来了以下有益效果：在本发明实施例的技术方案中，提供了一种阵列基板，该阵列基板包括多个阵列排布的子像素单元，各子像素单元包括主像素区域、次像素区域和分压电容。次像素电极和分压端电极之间设置有与公共端电极电连接的透明导电结构，次像素电极、分压端电极和透明导电结构位于同一图层且相互绝缘。若是透明导电材料残留，可能会将分压端电极和透明导电结构短路，或将透明导电结构和次像素电极短路，或将分压端电极、透明导电结构以及次像素电极三者短路，令次像素电极的电位与公共端电极的电位相等。利用现有的检测方法进行检测时，具有短路问题的子像素单元的亮度将低 于其余子像素单元的亮度，呈现出暗点情况，易于检测出来。
本发明第二方面提供了一种显示装置，该显示装置包括彩膜基板和上述的阵列基板。
其中，所述显示装置为垂直排列型显示装置。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要的附图做简单的介绍：
图1是现有技术的阵列基板的子像素单元的结构示意图；
图2是本发明实施例提供的阵列基板的子像素单元的结构示意图；
图3是本发明实施例提供的阵列基板的子像素单元的等效电路图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成技术效果的实现过程能充分理解并据以实施。需要说明的是，只要不构成冲突，本发明中的各个实施例以及各实施例中的各个特征可以相互结合，所形成的技术方案均在本发明的保护范围之内。
本发明实施例提供的一种阵列基板，该阵列基板包括多个阵列排布的子像素单元。各子像素单元包括主像素区域、次像素区域和分压电容3。
具体的，如图2所示，主像素区域包括主像素电极1，次像素区域包括次像素电极2，分压电容3包括分压端电极31和公共端电极32。次像素电极2和分压端电极31之间设置有透明导电结构4，透明导电结构4连接公共端电极32，次像素电极2、分压端电极31和透明导电结构4位于同一图层且相互绝缘。
在本发明实施例中，如图3所示，子像素单元设置有第一开关管T1和第二开关管T2，第一开关管T1对应主像素区域设置，第二开关管T2对应次像素区域设置。并且，各子像素单元对应设置有驱动扫描线(Gate1)、分压扫描线(Gate2)、公共端电极(Com)和数据线(Data)。其中，驱动扫描线(Gate1)、分压扫描线(Gate2)、公共端电极(Com)位于同一图层，可以在同一次构图工艺中同步形成。
驱动扫描线和分压扫描线并排设置在主像素区域和次像素区域之间，驱动扫描线驱动 对应主像素区域的第一开关管T1，分压扫描线驱动对应次像素区域的第二开关管T2。其中，T1和T2均优选为薄膜晶体管(Thin Film Transistor，简称TFT)。T1的栅极连接驱动扫描线，源极连接数据线，漏极连接主像素电极1；T2的栅极连接分压扫描线，源极连接数据线，漏极连接次像素电极2。
其中，主像素电极1可与彩膜基板上的公共电极形成液晶电容Clc1，主像素电极1与公共端电极11的重叠部分形成存储电容Cst1；次像素电极2可与彩膜基板上的公共电极形成液晶电容Clc2，次像素电极2与公共端电极32的重叠部分形成存储电容Cst2。
进一步的，除了第一开关管T1和第二开关管T2外，每一子像素单元中还可设置有第三开关管T3，如图3所示。该第三开关管T3也优选为薄膜晶体管。每个子像素单元中还设置有分压电容Cst3，分压电容Cst3包括分压端电极31和公共端电极32。
对于图3所示的结构，在显示过程中，驱动扫描线先接收到栅极驱动信号，导通了其对应的T1和T2。此时T1和T2从源极接入来自数据线的数据信号，并将该数据信号经由T1和T2传输至主像素电极1和次像素电极2，使Clc1、Cst1、Clc2和Cst2具有相等的电压。然后驱动扫描线的栅极驱动信号消失，分压扫描线接收栅极驱动信号。使得T1和T2关闭，T3导通，Cst3就会通过导通的T3分掉次像素电极2上的一部分数据信号，降低了次像素电极2上的电位，使Clc2和Cst2的电压降低，而Clc1和Cst1的电压保持不变。此时，Clc2的电压明显低于Clc1的电压，使得主像素区域与次像素区域中液晶分子的偏转角度不同，从而改善了VA型显示装置的大视角色偏现象。
在本发明实施例中，除了上述结构，还包括设置于分压端电极31和次像素电极2之间的透明导电结构4，且该透明导电结构4电连接公共端电极32。
由于分压端电极31、透明导电结构4以及次像素电极2为同一图层，均采用透明导电材料，例如氧化铟锡(Indium Tin Oxide，简称ITO)、氧化铟镓锌(Indium Gallium Zinc Oxide，简称IGZO)等透明导电材料。因此，分压端电极31、透明导电结构4以及次像素电极2通常在同一次构图工艺中形成。若是制作过程中，发生了透明导电材料的残留，可能会将分压端电极31和透明导电结构4短路，或将透明导电结构4和次像素电极2短路，或将分压端电极31、透明导电结构4以及次像素电极2三者短路。无论是哪一种短路情况，与公共端电极32电连接的透明导电结构4都将令次像素电极2的电位与公共端电极32的电位相等。由前文可知，次像素电极2与彩膜基板上的公共电极形成液晶电容Clc2，此时该液晶电容Clc2两侧电极的电位相等，无法驱动位于次像素区域对应区域的液晶分子偏转，使得该次像素区域不出光，导致该子像素单元呈现出暗点情况。
由于现有的检测方法需要令所有子像素单元同时充电。利用现有的检测方法进行检测 时，具有短路问题的子像素单元的亮度将低于其余子像素单元的亮度，呈现出暗点情况。该呈现出暗点情况的子像素单元很容易被检测出来，工程人员可以及时对该暗点的子像素单元进行修复，从而提高了液晶显示面板的良率，降低了液晶显示面板的成本。
在本发明实施例中，透明导电结构4与公共端电极32之间设置有绝缘层。因此，如图2所示，为了实现透明导电结构4与公共端电极32的电连接，绝缘层开设有过孔5，透明导电结构4通过该过孔5电连接公共端电极32。
一般的，由于透明导电结构4位于次像素电极2和分压端电极31之间，因此为了保证次像素电极2、透明导电结构4和分压端电极31三者之间的绝缘，次像素电极2和分压端电极31之间的距离应至少为4微米。
优选的，次像素电极2的面积占子像素单元开口区面积的60％，主像素电极1的面积占子像素单元开口区面积的40％，即次像素电极2与主像素电极1的面积比为6∶4。根据不同的显示要求，也有可能出现次像素电极2与主像素电极1的面积比为5∶5、4∶6等情况，本发明实施例对此不进行限制。
综上，在本发明实施例的技术方案中，提供了一种阵列基板，该阵列基板包括多个阵列排布的子像素单元，各子像素单元包括主像素区域、次像素区域和分压电容。次像素电极和分压端电极之间设置有与公共端电极电连接的透明导电结构，次像素电极、分压端电极和透明导电结构位于同一图层且相互绝缘。若是透明导电材料残留，可能会将分压端电极和透明导电结构短路，或将透明导电结构和次像素电极短路，或将分压端电极、透明导电结构以及次像素电极三者短路，令次像素电极的电位与公共端电极的电位相等。利用现有的检测方法进行检测时，具有短路问题的子像素单元的亮度将低于其余子像素单元的亮度，呈现出暗点情况，易于检测出来。
进一步的，本发明还提供了一种显示装置，优选为VA型显示装置，具体可以是液晶电视、液晶显示器、手机、平板电脑等。该显示装置包括彩膜基板和上述本发明实施例提供的阵列基板。
虽然本发明所公开的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所公开的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。
附图标记说明：
1-主像素电极；2-次像素电极；3-分压电容；31-分压端电极；32-公共端电极；4-透明导电结构；5-过孔。

Claims (10)

  1. 一种阵列基板，其中，包括多个阵列排布的子像素单元，各子像素单元包括主像素区域、次像素区域和分压电容；
    所述次像素区域包括次像素电极，所述分压电容包括分压端电极和公共端电极，所述次像素电极和所述分压端电极之间设置有透明导电结构，所述透明导电结构电连接所述公共端电极，所述次像素电极、所述分压端电极和所述透明导电结构位于同一图层且相互绝缘。
  2. 根据权利要求1所述的阵列基板，其中，所述透明导电结构与所述公共端电极之间设置有绝缘层，所述透明导电结构通过所述绝缘层上的过孔电连接所述公共端电极。
  3. 根据权利要求1所述的阵列基板，其中，各子像素单元设置有驱动扫描线、分压扫描线和数据线。
  4. 根据权利要求3所述的阵列基板，其中，各子像素单元中还设置有第一开关管，第二开关管和第三开关管；
    所述第一开关管的栅极连接所述驱动扫描线，源极连接所述数据线，漏极连接所述主像素电极；
    所述第二开关管的栅极连接所述驱动扫描线，源极连接所述数据线，漏极连接所述次像素电极；
    所述第三开关管的栅极连接所述分压扫描线，源极连接所述次像素电极，漏极连接所述分压端电极。
  5. 根据权利要求4所述的阵列基板，其中，所述第一开关管、所述第二开关管和所述第三开关管为薄膜晶体管。
  6. 根据权利要求1所述的阵列基板，其中，
    所述次像素电极和所述分压端电极之间的距离至少为4微米。
  7. 根据权利要求1所述的阵列基板，其中，
    所述次像素电极、所述分压端电极和所述透明导电结构在同一次构图工艺中形成。
  8. 根据权利要求1所述的阵列基板，其中，
    所述次像素区域和所述主像素区域的面积比为6∶4、5∶5或4∶6。
  9. 一种显示装置，其中，包括彩膜基板和阵列基板，所述阵列基板包括多个阵列排布的子像素单元，各子像素单元包括主像素区域、次像素区域和分压电容；
    所述次像素区域包括次像素电极，所述分压电容包括分压端电极和公共端电极，所述次像素电极和所述分压端电极之间设置有透明导电结构，所述透明导电结构电连接所述公 共端电极，所述次像素电极、所述分压端电极和所述透明导电结构位于同一图层且相互绝缘。
  10. 根据权利要求9所述的显示装置，其中，所述显示装置为垂直排列型显示装置。
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