WO2016086436A1 - 金属氧化物薄膜的生产方法及薄膜晶体管基板的生产方法 - Google Patents

金属氧化物薄膜的生产方法及薄膜晶体管基板的生产方法 Download PDF

Info

Publication number
WO2016086436A1
WO2016086436A1 PCT/CN2014/093498 CN2014093498W WO2016086436A1 WO 2016086436 A1 WO2016086436 A1 WO 2016086436A1 CN 2014093498 W CN2014093498 W CN 2014093498W WO 2016086436 A1 WO2016086436 A1 WO 2016086436A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
target
indium gallium
gallium zinc
zinc oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2014/093498
Other languages
English (en)
French (fr)
Inventor
赵国
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Publication of WO2016086436A1 publication Critical patent/WO2016086436A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Definitions

  • the present invention relates to the field of semiconductors, and in particular to a method for producing a metal oxide thin film and a method for producing a thin film transistor (TFT) substrate.
  • TFT thin film transistor
  • a TFT (Thin Film Transistor) LCD which is a thin film field effect thin film transistor liquid crystal display, is one of active matrix type liquid crystal displays (AM-LCDs).
  • LCD flat panel display, special TFT-LCD is the only display device that fully catches up and exceeds CRT in terms of brightness, contrast, power consumption, life, volume and weight. It has excellent performance and large-scale production characteristics. High degree of automation, low cost of raw materials, and broad development space will quickly become the mainstream products of the new century and a bright spot for global economic growth in the 21st century.
  • the TFT film is mainly divided into a metal film which is used to form an electrode of a TFT and a non-metal film which is used to form a channel and a protective layer.
  • the metal thin film manufacturing process mainly utilizes radio frequency current physical vapor deposition (RF-PVD), bombards the target with positive ions in the radio frequency discharge plasma, and sputters the target atoms to be deposited on the grounded substrate surface.
  • RF-PVD radio frequency current physical vapor deposition
  • the TFT component fabricated by the IGZO (indium gallium zinc oxide component) material has a higher closing current (I on ) and mobility (Mobility), and a lower breaking current (I off ). And uniformity and other characteristics, with the characteristics of future technology extension high-resolution development trend. Especially at room temperature 20-30 film forming temperature, IGZO has gradually become the material of choice for high-order displays, and has a tendency to replace amorphous silicon materials.
  • IGZO specific In:Ga:Zn:O composition ratio
  • the invention patent provides a metal film forming process, which can simultaneously satisfy the manufacturing process of different film material composition ratios. Moreover, the TFT elements prepared by the method are selective in production to meet the performance requirements of different products.
  • the present invention relates to a method for producing a metal thin film comprising: using a target of two or more different composition ratios according to different film quality components required for a target product, by controlling a film forming speed and a film forming time, The substance on the target is deposited on the substrate to obtain a metal oxide film containing different film components.
  • the embodiment according to any one of the first to fourth aspects of the present invention according to the film resistivity, mobility, and transparency of the metal oxide film,
  • the metal oxide film is obtained by controlling the film formation speed and the film formation time.
  • a method of producing a thin film transistor substrate comprising producing a metal thin film layer using the method of any of the above.
  • the present invention uses a target having two or more different In:Ga:Zn:O composition ratios, by controlling the corresponding formation of the two
  • the film speed or the target size is such that a semiconductor film having a desired composition ratio on the substrate is obtained.
  • the fabrication of TFT elements is selective to meet the performance requirements of different products.
  • TFT metal oxide film with different properties can be realized by staggering a plurality of indium gallium zinc oxide targets with different composition ratios, which greatly simplifies the production process and shortens the production in one device or in a process.
  • the cycle achieves maximum efficiency.
  • 1 is a first indium gallium zinc oxide target and a second indium gallium zinc oxide target respectively disposed in different devices.
  • FIG. 2 is a schematic diagram of a first indium gallium zinc oxide target and a second indium gallium zinc oxide target interleaved in the same apparatus in one embodiment.
  • FIG 3 is a schematic diagram of a first indium gallium zinc oxide target and a second indium gallium zinc oxide target staggered in the same apparatus in another embodiment.
  • FIG. 4 is a schematic diagram of a first indium gallium zinc oxide target and a second indium gallium zinc oxide target staggered in the same apparatus in another embodiment.
  • the expected film quality is obtained by controlling the RF PVD process parameters and the target composition ratio, wherein the process parameters are as follows: Film formation conditions: O 2 /(Ar+O 2 ) ratio is 0 to 5%, power is 140-310 W, pressure is 5-10 mTorr, and temperature is 15-30 °C.
  • this embodiment utilizes the installation of two different indium gallium zinc oxide (IGZO) targets in two different devices.
  • Installing a first indium gallium zinc oxide target in the device A, wherein the first indium gallium zinc oxide target has In:Ga:Zn:O 2:m:n:9, wherein the m value is 1.2 and n is 1.5;
  • a second indium gallium zinc oxide target is mounted in the device B.
  • the film is formed by the RF PVD twice, and the substrate is sequentially formed in the device A using the first indium gallium zinc oxide target.
  • IGZO film wherein the film forming conditions control Power 15 ⁇ 18kw, Ar flow 150 ⁇ 160sccm, O 2 flow 5 ⁇ 10sccm, film formation time is controlled at 65 ⁇ 90s; then use the second indium gallium zinc oxide target in the device B
  • the IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 290 to 370 s.
  • the first indium gallium zinc oxide target and the second indium gallium zinc oxide target each have a specific composition ratio of the above-mentioned In:Ga:Zn:O.
  • different film quality requirements are achieved by controlling the ratio of the four components in the target, the film formation time or the film formation speed, and the manufacturing process that satisfies the selection of different film component ratios is achieved.
  • the preparation of the TFT element is selective to meet the performance requirements of different products.
  • this embodiment utilizes the installation of two different indium gallium zinc oxide targets in two different devices.
  • the film is formed by the RF PVD twice, and the substrate is sequentially formed in the device A using the first indium gallium zinc oxide target.
  • IGZO film wherein the film forming conditions control Power 15 ⁇ 18kw, Ar flow 150 ⁇ 160sccm, O 2 flow 5 ⁇ 10sccm, film formation time is controlled at 270 ⁇ 350s; then use the second indium gallium zinc oxide target in the device B
  • the IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 75 to 105 s.
  • the first indium gallium zinc oxide target and the second indium gallium zinc oxide target each have a specific composition ratio of the above-mentioned In:Ga:Zn:O.
  • the ratio of the four components in the Target target by controlling the ratio of the four components in the Target target, the film formation time or the film formation speed, different film quality requirements are achieved, and the manufacturing process that satisfies the ratio of different film quality components is selected.
  • the prepared TFT element is made selectively to meet the performance requirements of different products.
  • this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in two different devices.
  • the film is formed by the RF PVD twice, and the substrate is sequentially formed in the device A using the first indium gallium zinc oxide target.
  • IGZO film wherein the film forming conditions control Power 15 ⁇ 18kw, Ar flow 150 ⁇ 160sccm, O 2 flow 5 ⁇ 10sccm, film formation time is controlled at 150 ⁇ 190s; then use the second indium gallium zinc oxide target in equipment B
  • the IGZO film has a film formation rate of 10 to 15 kW for power control, a flow rate of 150 to 160 sccm for Ar, a flow rate of 5 to 10 sccm for O 2 , and a film formation time of 160 to 210 s.
  • the first indium gallium zinc oxide target and the second indium gallium zinc oxide target each have a specific composition ratio of the above-mentioned In:Ga:Zn:O.
  • different film quality requirements are achieved by controlling the ratio of the four components in the target, the film formation time or the film formation speed, and the manufacturing process that satisfies the selection of different film component ratios is achieved.
  • the prepared TFT element is made selectively to meet the performance requirements of different products.
  • this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device.
  • the first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG.
  • the IGZO film has a film forming condition of Control 15 to 18 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 620 to 710 s.
  • this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device.
  • the first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG.
  • the IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 75 to 105 s.
  • this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device.
  • the first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG.
  • the IGZO film has a film forming condition of Control 15 to 18 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 620 to 710 s.
  • this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device.
  • the first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG.
  • the IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 75 to 105 s.
  • this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device.
  • the first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG.
  • the IGZO film has a film forming condition of 15 to 18 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 620 to 710 s.
  • this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device.
  • the first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG.
  • the IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 75 to 105 s.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Thin Film Transistor (AREA)

Abstract

提供一种金属氧化物薄膜的生产方法，包括根据目标产品所需的不同膜质成分，使用两种以上不同成分比例的靶材，通过控制成膜速度和成膜时间，将靶材上的物质沉积在基板上，来得到含有不同的膜质成分的金属氧化物薄膜。并且还提供一种薄膜晶体管基板的生产方法以及由该方法生产的薄膜晶体管基板。

Description

金属氧化物薄膜的生产方法及薄膜晶体管基板的生产方法
相关申请的交叉引用
本发明要求享有于2014年12月4日提交的中国专利申请CN201410720971.3的优先权，该申请的全部内容通过引用而全部结合于本发明中。
技术领域
本发明涉及半导体领域，具体涉及一种金属氧化物薄膜的生产方法以及薄膜晶体管(TFT)基板的生产方法。
背景技术
TFT(Thin Film Transistor)LCD即薄膜场效应薄膜晶体管液晶显示器，是有源矩阵类型液晶显示器(AM-LCD)中的一种。液晶平板显示器，特别TFT-LCD，是目前唯一在亮度、对比度、功耗、寿命、体积和重量等综合性能上全面赶上和超过CRT的显示器件，它的性能优良、大规模生产特性好，自动化程度高，原材料成本低廉，发展空间广阔，将迅速成为新世纪的主流产品，是21世纪全球经济增长的一个亮点。TFT薄膜主要分金属薄膜和非金属薄膜，金属薄膜用来形成TFT的电极，非金属薄膜(半导体薄膜)用来形成沟道和保护层。
金属薄膜的制造工艺主要利用射频电流物理气相沉积法(RF-PVD)，使用射频放电等离子体中的正离子轰击靶材、溅射出靶材原子从而沉积在接地的基板表面上。
在该金属薄膜制造工艺中，由于IGZO(铟镓锌氧成分)材料制作的TFT组件具有更高的关合电流(Ion)与迁移率(Mobility)，更低的开断电流(Ioff)及均匀性等特性，具符合未来技术延伸高解析度发展趋势之特性。尤其是在室温20-30的成膜温度，使得IGZO逐渐成为高阶显示器的首选材料，并且呈现取代非晶硅材料的趋势。
然而，传统使用单一的IGZO(特定的In∶Ga∶Zn∶O成分比例)的靶材在基板上成膜，所成膜质的成分比例由靶材决定，使得膜质的成分依赖于靶材本身，限制膜质的选择与调整。而且如果需要生产不同膜质成分的金属薄膜，需要关停设备，更换靶材，使得生产流程变得复杂，不够灵活。
发明内容
本发明专利提供一种金属薄膜成膜工艺，可同时满足不同膜质成分比例选择的制造工艺。而且利用该方法制备的TFT元件的制作具有选择性，满足不同产品的性能要求。
1)本发明的涉及一种金属薄膜的生产方法，包括根据目标产品所需的不同膜质成分，使用两种以上不同成分比例的靶材，通过控制成膜速度和成膜时间，将所述靶材上的物质沉积在基板上，来得到含有不同的膜质成分的金属氧化物薄膜。
2)根据本发明的第1)项所述的实施方式，所述靶材为铟镓锌氧(IGZO)靶材。
3)根据本发明的第1)或第2)项所述的实施方式，可使用两种不同成分比例的铟镓锌氧靶材。
4)根据本发明的第3)项所述的实施方式，使用的第一靶材的In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m选自1.2-2.8，n选自1.5-3.2；使用的第二靶材的In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值介于1.0-3.0，k介于5-10。
5)根据本发明的第1)-第4)项中任一项所述的实施方式，根据金属氧化物薄膜的薄膜阻抗(Film Resistivity)、迁移率(Mobility)和透明度(transparency)的要求，控制所述成膜速度和成膜时间得到所述金属氧化物薄膜。
6)根据本发明的第5)项所述的实施方式，所述金属氧化物薄膜的薄膜阻抗(Film Resistivity)为0.1～1000Ω*cm。
7)根据本发明的第5)或6)项所述的实施方式，所述金属氧化物薄膜的迁移率(Mobility)为10～20cm2/VS。
8)根据本发明的第5)-第7)项中任一项所述的实施方式，所述金属氧化物薄膜的的透明度大于80％。
9)根据本发明的第4)-第8)项中任一项所述的实施方式，将所述第一靶材和第二靶材交错设置在同一成膜设备中，通过轰击所述交错设置的第一靶材和第二靶材来得到所述金属氧化物薄膜。
10)根据本发明的第4)-第8)项中任一项所述的实施方式，将所述第一靶材和第二靶材分别置于不同成膜设备中，将所述基板分别依次置入不同成膜设备中进行成膜，得到所述金属薄膜。
11)一种薄膜晶体管基板的生产方法，包括使用上述任一项的方法来生产金属薄膜层。
12)一种根据根据本发明的第11)项所述的生产方法生产的薄膜晶体管基板。
本发明的有益效果：
本发明使用有两种或以上不同In∶Ga∶Zn∶O成分比例的靶材，通过控制两者相应的成 膜速度或者靶材大小，达到在基板上成所需成分比例的半导体薄膜。使得TFT元件的制作具有选择性，满足不同产品的性能要求。
可通过交错设置多种不同成分比例的铟镓锌氧靶材，同时在一个设备中，或者在一个工艺流程中显现不同性能的TFT金属氧化物薄膜的生产，大大简化了生产流程，缩短了生产周期，实现了效率的最大化。
附图说明
图1为在不同设备中分别设置的第一铟镓锌氧靶材和第二铟镓锌氧靶材。
图2为在一个实施例中，同一设备中交错设置的第一铟镓锌氧靶材和第二铟镓锌氧靶材的示意图。
图3为在另一个实施例中，同一设备中交错设置的第一铟镓锌氧靶材和第二铟镓锌氧靶材的示意图。
图4为在另一个实施例中，同一设备中交错设置的第一铟镓锌氧靶材和第二铟镓锌氧靶材的示意图。
具体实施方式
此处所用之术语仅出于描述特定实施方案的目的，并不意欲限制本发明。除非上下文中清楚地显示出另外的情况，如此处所用的单数形式“一个”和“该”也包括复数形式。还应当理解，在本说明书中使用的用语“包括”和/或“包括有”时说明了存在所述的特征、整体、步骤、操作、部件和/或构件，但不妨碍一个或多个其他特征、整体、步骤、操作、部件组、构件和/或构件组的存在或添加。
例如“包括”、“包含”、“具有”、“含有”或“涉及”的用语及其变体应广泛地理解，并且包含所列出的主体以及等效物，还有未列出的另外的主体。另外，当由过渡性用语“包含”、“包括”或“含有”来引出组分、部件组、工艺或方法步骤或者任何其他的表述时，应当理解此处还考虑了相同的组分、部件组、工艺或方法步骤，或者具有在该组分、部件组、工艺或方法步骤或任何其它表述的记载之前的过渡性用语“基本上由...组成”、“由...组成”或“选自由...构成的组”的任何其它的表述。
如果的适用话，权利要求中的相应的结构、材料、动作以及所有功能性的装置或步骤的等效物包括用于与权利要求中所具体陈述的其他部件相结合地来执行功能的任何结构、材料或动作。本发明的说明书出于介绍和描述的目的而提供，但并不是穷举性的或将本发 明限制到所公开的形式。在不偏离本发明的范围和精神的前提下，许多改变和变体对于本领域的普通技术人员来说是显而易见的。这里选择并描述了一些实施方案，目的是对本发明的原理和实际应用进行最佳的解释，并且使得本领域的其他普通技术人员能够理解本发明的不同实施方案具有多种变化，如同适合于该特定用途一样。相应地，尽管本发明已经依据实施方案进行了描述，然而本领域技术人员将认识到，本发明可以有所改变地并在所附权利要求的精神和范围之内实施。
现在将详细参考特定的所公开的主题。尽管所公开的主题将结合所列举的权利要求来描述，然而可以理解，它们并不将所公开的主题限制到这些权利要求中。相反，所公开的主题覆盖了所有的替代方案、改变以及等效物，这些可以包含于由权利要求所限定的所公开的主题的范围之内。
以下结合实施例对本发明进行详细说明，但应理解的是本发明的范围并不限于以下实施例。
在薄膜晶体管(TFT)基板制造工艺中的铟镓锌氧金属薄膜制备过程中，通过控制射频物理气相沉积(RF PVD)制程参数与靶材成分比率获得预期的膜质，其中的制程参数如下：成膜条件：O2/(Ar+O2)比为0～5％，功率为140-310W，压力为5-10mTorr，温度为15-30℃。
实施例1
如图1所示，本实施例是利用将两种不同的铟镓锌氧(IGZO)靶材安装在两个不同的设备中。在设备A内安装第一铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为1.2，n为1.5；在设备B内安装第二铟镓锌氧靶材，第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为1.0，k为5。
在本实施例中，通过2次RF PVD成膜，基板先后在设备A内使用第一铟镓锌氧靶材形成厚度在
Figure PCTCN2014093498-appb-000001
的IGZO膜，其中成膜条件控制Power15～18kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在65～90s；然后在设备B内使用第二铟镓锌氧靶材形成
Figure PCTCN2014093498-appb-000002
的IGZO膜，其中成膜条件控制Power10～15kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在290～370s。第一铟镓锌氧靶材与第二铟镓锌氧靶材分别具有具有上述特定In∶Ga∶Zn∶O四种成分比例。本实施例通过控制靶材中4种成分的比例及成膜时间或者成膜速度实现不同的膜质需求，达到满足不同膜质成分比例选择的制造工艺。 制备得到TFT元件的制作具有选择性，满足不同产品的性能要求。
实施例2
如图1所示，本实施例是利用将两种不同的铟镓锌氧靶材安装在两个不同的设备中。在设备A内安装第一铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为2.8，n为3.2；在设备B内安装第二铟镓锌氧靶材，第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j为3.0，k为10，
在本实施例中，通过2次RF PVD成膜，基板先后在设备A内使用第一铟镓锌氧靶材形成厚度在
Figure PCTCN2014093498-appb-000003
的IGZO膜，其中成膜条件控制Power15～18kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在270～350s；然后在设备B内使用第二铟镓锌氧靶材成
Figure PCTCN2014093498-appb-000004
的IGZO膜，其中成膜条件控制Power10～15kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在75～105s。第一铟镓锌氧靶材与第二铟镓锌氧靶材分别具有具有上述特定In∶Ga∶Zn∶O四种成分比例。本实施例通过控制Target靶材中4种成分的比例及成膜时间或者成膜速度实现不同的膜质需求，达到满足不同膜质成分比例选择的制造工艺。制备得到的TFT元件的制作具有选择性，满足不同产品的性能要求。
实施例3
如图1所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在两个不同的设备中。在设备A内安装第一铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为2，n为2.5；在设备B内安装第二铟镓锌氧靶材，第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j为2.0，k为8，
在本实施例中，通过2次RF PVD成膜，基板先后在设备A内使用第一铟镓锌氧靶材形成厚度在
Figure PCTCN2014093498-appb-000005
的IGZO膜，其中成膜条件控制Power15～18kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在150～190s；然后在设备B内使用第二铟镓锌氧靶材成
Figure PCTCN2014093498-appb-000006
的IGZO膜，其中成膜速度为条件控制Power10～15kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在160～210s。第一铟镓锌氧靶材与第二铟镓锌氧靶材分别具有具有上述特定In∶Ga∶Zn∶O四种成分比例。本实施例通过控制靶材中4种成分的比例及成膜时间或者成膜速度实现不同的膜质需求，达到满足不同膜质成分比例选择的制造工艺。制备得到的TFT元件的制作具有选择性，满足不同产品的性能要求。
实施例4
如图2所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在同一个设备中。其中本实施例的第一铟镓锌氧靶材和第二铟镓锌氧靶材如图2所示的方式进行交错设置在一个设备中。本实施例通过1次RF PVD成膜，在设备内交错安装第一铟镓锌氧靶材与第二铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为2.8，n为3.2；第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为3.0，k为10，基板在设备内使用第一铟镓锌氧靶材与第二铟镓锌氧靶材形成厚度在
Figure PCTCN2014093498-appb-000007
的IGZO膜，其中成膜条件控制Power15～18kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间为控制在620-710s。
实施例5
如图2所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在同一个设备中。其中本实施例的第一铟镓锌氧靶材和第二铟镓锌氧靶材如图2所示的方式进行交错设置在一个设备中。本实施例通过1次RF PVD成膜，在设备内交错安装第一铟镓锌氧靶材与第二铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为1.2，n为1.5；第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为1.0，k为5，基板在设备内使用第一铟镓锌氧靶材与第二铟镓锌氧靶材形成厚度在
Figure PCTCN2014093498-appb-000008
的IGZO膜，其中成膜条件控制Power10～15kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在75～105s。
实施例6
如图3所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在同一个设备中。其中本实施例的第一铟镓锌氧靶材和第二铟镓锌氧靶材如图3所示的方式进行交错设置在一个设备中。本实施例通过1次RF PVD成膜，在设备内交错安装第一铟镓锌氧靶材与第二铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为2.8，n为3.2；第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为3.0，k为10，基板在设备内使用第一铟镓锌氧靶材与第二铟镓锌氧靶材形成厚度在
Figure PCTCN2014093498-appb-000009
的IGZO膜，其中成膜条件控制Power15～18kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间为控制在620-710s。
实施例7
如图3所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在同一个设备中。其中本实施例的第一铟镓锌氧靶材和第二铟镓锌氧靶材如图3所示的方式进行交错设置 在一个设备中。本实施例通过1次RF PVD成膜，在设备内交错安装第一铟镓锌氧靶材与第二铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为1.2，n为1.5；第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为1.0，k为5，基板在设备内使用第一铟镓锌氧靶材与第二铟镓锌氧靶材形成厚度在
Figure PCTCN2014093498-appb-000010
的IGZO膜，其中成膜条件控制Power10～15kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间为75～105s。
实施例8
如图4所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在同一个设备中。其中本实施例的第一铟镓锌氧靶材和第二铟镓锌氧靶材如图4所示的方式进行交错设置在一个设备中。本实施例通过1次RF PVD成膜，在设备内交错安装第一铟镓锌氧靶材与第二铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为2.8，n为3.2；第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为3.0，k为10，基板在设备内使用第一铟镓锌氧靶材与第二铟镓锌氧靶材形成厚度在
Figure PCTCN2014093498-appb-000011
的IGZO膜，其中成膜条件控制Power15～18kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间为控制在620～710s。
实施例9
如图4所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在同一个设备中。其中本实施例的第一铟镓锌氧靶材和第二铟镓锌氧靶材如图4所示的方式进行交错设置在一个设备中。本实施例通过1次RF PVD成膜，在设备内交错安装第一铟镓锌氧靶材与第二铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为1.2，n为1.5；第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为1.0，k为5，基板在设备内使用第一铟镓锌氧靶材与第二铟镓锌氧靶材形成厚度在
Figure PCTCN2014093498-appb-000012
的IGZO膜，其中成膜条件控制Power10～15kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间为75-105s。
应当注意的是，以上所述的实施例仅用于解释本发明，并不构成对本发明的任何限制。通过参照典型实施例对本发明进行了描述，但应当理解为其中所用的词语为描述性和解释性词汇，而不是限定性词汇。可以按规定在本发明权利要求的范围内对本发明作出修改，以及在不背离本发明的范围和精神内对本发明进行修订。尽管其中描述的本发明涉及特定的方法、材料和实施例，但是并不意味着本发明限于其中公开的特定例，相反，本发明可扩展至其他所有具有相同功能的方法和应用。

Claims (12)

  1. 一种金属氧化物薄膜的制备方法，包括根据目标产品所需的不同膜质成分，使用两种以上不同成分比例的靶材，通过控制成膜速度和成膜时间，将所述靶材上的物质沉积在基板上，来得到含有不同的膜质成分的金属氧化物薄膜。
  2. 根据权利要求1所述的方法，其中所述靶材为铟镓锌氧靶材。
  3. 根据权利要求2所述的方法，其中使用两种不同成分比例的铟镓锌氧靶材。
  4. 根据权利要求3所述的方法，其中使用的第一靶材的In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m选自1.2-2.8，n选自1.5-3.2；使用的第二靶材的In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值介于1.0-3.0，k介于5-10。
  5. 根据权利要求1-4中任一项所述的方法，其中根据金属氧化物薄膜的薄膜阻抗、迁移率和透明度的要求，控制所述成膜速度和成膜时间得到所述金属氧化物薄膜。
  6. 根据权利要求5所述的方法，其中所述金属氧化物薄膜的薄膜阻抗为0.1～1000Ω*cm。
  7. 根据权利要求5所述的方法，其中所述金属氧化物薄膜的迁移率为10～20cm2/VS。
  8. 根据权利要求5所述的方法，其中所述金属氧化物薄膜的透明度大于80％。
  9. 根据权利要求4所述的方法，其中将第一靶材和第二靶材交错设置在同一成膜设备中，通过轰击所述交错设置的第一靶材和第二靶材来得到所述金属氧化物薄膜。
  10. 根据权利要求4所述的方法，其中将所述第一靶材和第二靶材分别置于不同成膜设备中，将所述基板分别依次置入不同成膜设备中进行成膜，得到所述金属氧化物薄膜。
  11. 一种薄膜晶体管基板的生产方法，包括使用权利要求1-10中任一项所述的方法来生产金属薄膜层。
  12. 一种根据根据权利要求11所述的生产方法生产的薄膜晶体管基板。
PCT/CN2014/093498 2014-12-02 2014-12-10 金属氧化物薄膜的生产方法及薄膜晶体管基板的生产方法 Ceased WO2016086436A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410720971.3A CN104392966B (zh) 2014-12-02 2014-12-02 金属氧化物薄膜的生产方法及薄膜晶体管基板的生产方法
CN201410720971.3 2014-12-02

Publications (1)

Publication Number Publication Date
WO2016086436A1 true WO2016086436A1 (zh) 2016-06-09

Family

ID=52610843

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/093498 Ceased WO2016086436A1 (zh) 2014-12-02 2014-12-10 金属氧化物薄膜的生产方法及薄膜晶体管基板的生产方法

Country Status (2)

Country Link
CN (1) CN104392966B (zh)
WO (1) WO2016086436A1 (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101748361A (zh) * 2008-12-11 2010-06-23 上海广电电子股份有限公司 一种溅射靶材的制造方法
CN103373845A (zh) * 2012-04-13 2013-10-30 光洋应用材料科技股份有限公司 铟镓锌氧化物及其制法与应用
CN103451609A (zh) * 2013-08-30 2013-12-18 中国科学院西安光学精密机械研究所 一种多孔氧化物半导体纳米薄膜制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4650315B2 (ja) * 2005-03-25 2011-03-16 株式会社ブリヂストン Ｉｎ−Ｇａ−Ｚｎ−Ｏ膜の成膜方法
KR100889688B1 (ko) * 2007-07-16 2009-03-19 삼성모바일디스플레이주식회사 반도체 활성층 제조 방법, 그를 이용한 박막 트랜지스터의제조 방법 및 반도체 활성층을 구비하는 박막 트랜지스터
US8821701B2 (en) * 2010-06-02 2014-09-02 Clifton Higdon Ion beam sputter target and method of manufacture
CN103903988B (zh) * 2012-12-26 2017-03-08 王良源 氧化物半导体制造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101748361A (zh) * 2008-12-11 2010-06-23 上海广电电子股份有限公司 一种溅射靶材的制造方法
CN103373845A (zh) * 2012-04-13 2013-10-30 光洋应用材料科技股份有限公司 铟镓锌氧化物及其制法与应用
CN103451609A (zh) * 2013-08-30 2013-12-18 中国科学院西安光学精密机械研究所 一种多孔氧化物半导体纳米薄膜制备方法

Also Published As

Publication number Publication date
CN104392966B (zh) 2017-06-16
CN104392966A (zh) 2015-03-04

Similar Documents

Publication Publication Date Title
CN103779425B (zh) 一种铟镓锌氧化物半导体薄膜和铟镓锌氧化物tft制备方法
US20140001469A1 (en) Thin-film transistor and zinc oxide-based sputtering target for the same
JP2023178321A (ja) 発光装置
US20200350167A1 (en) Inorganic metallic oxide thin film with composite crystal form and manufacturing method thereof
US8361897B2 (en) Method for depositing a thin film electrode and thin film stack
US20240360550A1 (en) C-axis oriented izo material film and manufacturing method therefor
CN103972110B (zh) 薄膜晶体管及其制备方法、阵列基板、显示装置
US20130148073A1 (en) Method For Preparing Conducting Film On Ultra-Thin Glass Substrate, LCD Substrate, Liquid Crystal Panel and LCD Device
CN102646714A (zh) 一种薄膜晶体管、阵列基板及其制备方法
CN103236400B (zh) 低温多晶硅薄膜制作方法、薄膜晶体管制作方法
CN106847675B (zh) 低温多晶硅薄膜及其制备方法、薄膜晶体管和显示面板
WO2016086436A1 (zh) 金属氧化物薄膜的生产方法及薄膜晶体管基板的生产方法
US9583517B2 (en) Polycrystalline oxide thin-film transistor array substrate and method of manufacturing same
CN103903988B (zh) 氧化物半导体制造方法
KR101273707B1 (ko) 투명 박막 트랜지스터 및 그 제조방법
CN106298953B (zh) 一种高性能氧化镍基p型薄膜晶体管及其制备方法
JP2024539464A (ja) 酸化物半導体、その製造方法およびそれを含む半導体デバイス
TWI537654B (zh) Copper conductor structure and manufacturing method thereof
CN103560147B (zh) 一种氮磷氧锌薄膜及其制备方法和薄膜晶体管
CN114141787B (zh) 阵列基板及其制备方法、显示面板
CN108342690A (zh) 一种高方阻掺镓氧化锌透明导电薄膜及其制备方法
CN110610867A (zh) 薄膜晶体管制备方法及薄膜晶体管
CN106711197A (zh) 一种p型CuNiSnO非晶氧化物半导体薄膜及其制备方法
TWI543262B (zh) 阻障層之製造方法與半導體元件及其製造方法
CN106711192B (zh) 一种p型CuMSnO非晶氧化物半导体薄膜及其制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14907368

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14907368

Country of ref document: EP

Kind code of ref document: A1