WO2016086436A1 - Manufacturing method for metal oxide thin-film and manufacturing method for thin-film transistor substrate - Google Patents
Manufacturing method for metal oxide thin-film and manufacturing method for thin-film transistor substrate Download PDFInfo
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- WO2016086436A1 WO2016086436A1 PCT/CN2014/093498 CN2014093498W WO2016086436A1 WO 2016086436 A1 WO2016086436 A1 WO 2016086436A1 CN 2014093498 W CN2014093498 W CN 2014093498W WO 2016086436 A1 WO2016086436 A1 WO 2016086436A1
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- film
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- indium gallium
- gallium zinc
- zinc oxide
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- 239000000758 substrate Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 20
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000000126 substance Substances 0.000 claims abstract description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 178
- 239000010408 film Substances 0.000 claims description 114
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 96
- 229910052733 gallium Inorganic materials 0.000 claims description 96
- 229910052738 indium Inorganic materials 0.000 claims description 96
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 96
- 239000011787 zinc oxide Substances 0.000 claims description 89
- 239000011701 zinc Substances 0.000 claims description 34
- 230000015572 biosynthetic process Effects 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000004615 ingredient Substances 0.000 abstract 3
- 239000013077 target material Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005240 physical vapour deposition Methods 0.000 description 11
- 238000009434 installation Methods 0.000 description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
Definitions
- the present invention relates to the field of semiconductors, and in particular to a method for producing a metal oxide thin film and a method for producing a thin film transistor (TFT) substrate.
- TFT thin film transistor
- a TFT (Thin Film Transistor) LCD which is a thin film field effect thin film transistor liquid crystal display, is one of active matrix type liquid crystal displays (AM-LCDs).
- LCD flat panel display, special TFT-LCD is the only display device that fully catches up and exceeds CRT in terms of brightness, contrast, power consumption, life, volume and weight. It has excellent performance and large-scale production characteristics. High degree of automation, low cost of raw materials, and broad development space will quickly become the mainstream products of the new century and a bright spot for global economic growth in the 21st century.
- the TFT film is mainly divided into a metal film which is used to form an electrode of a TFT and a non-metal film which is used to form a channel and a protective layer.
- the metal thin film manufacturing process mainly utilizes radio frequency current physical vapor deposition (RF-PVD), bombards the target with positive ions in the radio frequency discharge plasma, and sputters the target atoms to be deposited on the grounded substrate surface.
- RF-PVD radio frequency current physical vapor deposition
- the TFT component fabricated by the IGZO (indium gallium zinc oxide component) material has a higher closing current (I on ) and mobility (Mobility), and a lower breaking current (I off ). And uniformity and other characteristics, with the characteristics of future technology extension high-resolution development trend. Especially at room temperature 20-30 film forming temperature, IGZO has gradually become the material of choice for high-order displays, and has a tendency to replace amorphous silicon materials.
- IGZO specific In:Ga:Zn:O composition ratio
- the invention patent provides a metal film forming process, which can simultaneously satisfy the manufacturing process of different film material composition ratios. Moreover, the TFT elements prepared by the method are selective in production to meet the performance requirements of different products.
- the present invention relates to a method for producing a metal thin film comprising: using a target of two or more different composition ratios according to different film quality components required for a target product, by controlling a film forming speed and a film forming time, The substance on the target is deposited on the substrate to obtain a metal oxide film containing different film components.
- the embodiment according to any one of the first to fourth aspects of the present invention according to the film resistivity, mobility, and transparency of the metal oxide film,
- the metal oxide film is obtained by controlling the film formation speed and the film formation time.
- a method of producing a thin film transistor substrate comprising producing a metal thin film layer using the method of any of the above.
- the present invention uses a target having two or more different In:Ga:Zn:O composition ratios, by controlling the corresponding formation of the two
- the film speed or the target size is such that a semiconductor film having a desired composition ratio on the substrate is obtained.
- the fabrication of TFT elements is selective to meet the performance requirements of different products.
- TFT metal oxide film with different properties can be realized by staggering a plurality of indium gallium zinc oxide targets with different composition ratios, which greatly simplifies the production process and shortens the production in one device or in a process.
- the cycle achieves maximum efficiency.
- 1 is a first indium gallium zinc oxide target and a second indium gallium zinc oxide target respectively disposed in different devices.
- FIG. 2 is a schematic diagram of a first indium gallium zinc oxide target and a second indium gallium zinc oxide target interleaved in the same apparatus in one embodiment.
- FIG 3 is a schematic diagram of a first indium gallium zinc oxide target and a second indium gallium zinc oxide target staggered in the same apparatus in another embodiment.
- FIG. 4 is a schematic diagram of a first indium gallium zinc oxide target and a second indium gallium zinc oxide target staggered in the same apparatus in another embodiment.
- the expected film quality is obtained by controlling the RF PVD process parameters and the target composition ratio, wherein the process parameters are as follows: Film formation conditions: O 2 /(Ar+O 2 ) ratio is 0 to 5%, power is 140-310 W, pressure is 5-10 mTorr, and temperature is 15-30 °C.
- this embodiment utilizes the installation of two different indium gallium zinc oxide (IGZO) targets in two different devices.
- Installing a first indium gallium zinc oxide target in the device A, wherein the first indium gallium zinc oxide target has In:Ga:Zn:O 2:m:n:9, wherein the m value is 1.2 and n is 1.5;
- a second indium gallium zinc oxide target is mounted in the device B.
- the film is formed by the RF PVD twice, and the substrate is sequentially formed in the device A using the first indium gallium zinc oxide target.
- IGZO film wherein the film forming conditions control Power 15 ⁇ 18kw, Ar flow 150 ⁇ 160sccm, O 2 flow 5 ⁇ 10sccm, film formation time is controlled at 65 ⁇ 90s; then use the second indium gallium zinc oxide target in the device B
- the IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 290 to 370 s.
- the first indium gallium zinc oxide target and the second indium gallium zinc oxide target each have a specific composition ratio of the above-mentioned In:Ga:Zn:O.
- different film quality requirements are achieved by controlling the ratio of the four components in the target, the film formation time or the film formation speed, and the manufacturing process that satisfies the selection of different film component ratios is achieved.
- the preparation of the TFT element is selective to meet the performance requirements of different products.
- this embodiment utilizes the installation of two different indium gallium zinc oxide targets in two different devices.
- the film is formed by the RF PVD twice, and the substrate is sequentially formed in the device A using the first indium gallium zinc oxide target.
- IGZO film wherein the film forming conditions control Power 15 ⁇ 18kw, Ar flow 150 ⁇ 160sccm, O 2 flow 5 ⁇ 10sccm, film formation time is controlled at 270 ⁇ 350s; then use the second indium gallium zinc oxide target in the device B
- the IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 75 to 105 s.
- the first indium gallium zinc oxide target and the second indium gallium zinc oxide target each have a specific composition ratio of the above-mentioned In:Ga:Zn:O.
- the ratio of the four components in the Target target by controlling the ratio of the four components in the Target target, the film formation time or the film formation speed, different film quality requirements are achieved, and the manufacturing process that satisfies the ratio of different film quality components is selected.
- the prepared TFT element is made selectively to meet the performance requirements of different products.
- this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in two different devices.
- the film is formed by the RF PVD twice, and the substrate is sequentially formed in the device A using the first indium gallium zinc oxide target.
- IGZO film wherein the film forming conditions control Power 15 ⁇ 18kw, Ar flow 150 ⁇ 160sccm, O 2 flow 5 ⁇ 10sccm, film formation time is controlled at 150 ⁇ 190s; then use the second indium gallium zinc oxide target in equipment B
- the IGZO film has a film formation rate of 10 to 15 kW for power control, a flow rate of 150 to 160 sccm for Ar, a flow rate of 5 to 10 sccm for O 2 , and a film formation time of 160 to 210 s.
- the first indium gallium zinc oxide target and the second indium gallium zinc oxide target each have a specific composition ratio of the above-mentioned In:Ga:Zn:O.
- different film quality requirements are achieved by controlling the ratio of the four components in the target, the film formation time or the film formation speed, and the manufacturing process that satisfies the selection of different film component ratios is achieved.
- the prepared TFT element is made selectively to meet the performance requirements of different products.
- this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device.
- the first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG.
- the IGZO film has a film forming condition of Control 15 to 18 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 620 to 710 s.
- this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device.
- the first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG.
- the IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 75 to 105 s.
- this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device.
- the first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG.
- the IGZO film has a film forming condition of Control 15 to 18 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 620 to 710 s.
- this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device.
- the first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG.
- the IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 75 to 105 s.
- this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device.
- the first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG.
- the IGZO film has a film forming condition of 15 to 18 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 620 to 710 s.
- this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device.
- the first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG.
- the IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 75 to 105 s.
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Abstract
Provided is a manufacturing method for a metal oxide thin-film, the method comprising: according to different membranous ingredients required by a target product, using two or more target materials having different proportions of ingredients, and depositing the substance on the target material onto a substrate by controlling film-forming speed and film-forming time, so as to obtain a metal oxide thin-film containing different membranous ingredients. Also provided are a manufacturing method for a thin-film transistor substrate, and a thin-film transistor substrate manufactured therewith.
Description
相关申请的交叉引用Cross-reference to related applications
本发明要求享有于2014年12月4日提交的中国专利申请CN201410720971.3的优先权，该申请的全部内容通过引用而全部结合于本发明中。The present invention claims priority to Chinese Patent Application No. CN201410720971.3, filed on Dec. 4, 2014, the entire disclosure of which is hereby incorporated by reference.
本发明涉及半导体领域，具体涉及一种金属氧化物薄膜的生产方法以及薄膜晶体管(TFT)基板的生产方法。The present invention relates to the field of semiconductors, and in particular to a method for producing a metal oxide thin film and a method for producing a thin film transistor (TFT) substrate.
TFT(Thin Film Transistor)LCD即薄膜场效应薄膜晶体管液晶显示器，是有源矩阵类型液晶显示器(AM-LCD)中的一种。液晶平板显示器，特别TFT-LCD，是目前唯一在亮度、对比度、功耗、寿命、体积和重量等综合性能上全面赶上和超过CRT的显示器件，它的性能优良、大规模生产特性好，自动化程度高，原材料成本低廉，发展空间广阔，将迅速成为新世纪的主流产品，是21世纪全球经济增长的一个亮点。TFT薄膜主要分金属薄膜和非金属薄膜，金属薄膜用来形成TFT的电极，非金属薄膜(半导体薄膜)用来形成沟道和保护层。A TFT (Thin Film Transistor) LCD, which is a thin film field effect thin film transistor liquid crystal display, is one of active matrix type liquid crystal displays (AM-LCDs). LCD flat panel display, special TFT-LCD, is the only display device that fully catches up and exceeds CRT in terms of brightness, contrast, power consumption, life, volume and weight. It has excellent performance and large-scale production characteristics. High degree of automation, low cost of raw materials, and broad development space will quickly become the mainstream products of the new century and a bright spot for global economic growth in the 21st century. The TFT film is mainly divided into a metal film which is used to form an electrode of a TFT and a non-metal film which is used to form a channel and a protective layer.
金属薄膜的制造工艺主要利用射频电流物理气相沉积法(RF-PVD)，使用射频放电等离子体中的正离子轰击靶材、溅射出靶材原子从而沉积在接地的基板表面上。The metal thin film manufacturing process mainly utilizes radio frequency current physical vapor deposition (RF-PVD), bombards the target with positive ions in the radio frequency discharge plasma, and sputters the target atoms to be deposited on the grounded substrate surface.
在该金属薄膜制造工艺中，由于IGZO(铟镓锌氧成分)材料制作的TFT组件具有更高的关合电流(Ion)与迁移率(Mobility)，更低的开断电流(Ioff)及均匀性等特性，具符合未来技术延伸高解析度发展趋势之特性。尤其是在室温20-30的成膜温度，使得IGZO逐渐成为高阶显示器的首选材料，并且呈现取代非晶硅材料的趋势。In the metal thin film manufacturing process, the TFT component fabricated by the IGZO (indium gallium zinc oxide component) material has a higher closing current (I on ) and mobility (Mobility), and a lower breaking current (I off ). And uniformity and other characteristics, with the characteristics of future technology extension high-resolution development trend. Especially at room temperature 20-30 film forming temperature, IGZO has gradually become the material of choice for high-order displays, and has a tendency to replace amorphous silicon materials.
然而，传统使用单一的IGZO(特定的In∶Ga∶Zn∶O成分比例)的靶材在基板上成膜，所成膜质的成分比例由靶材决定，使得膜质的成分依赖于靶材本身，限制膜质的选择与调整。而且如果需要生产不同膜质成分的金属薄膜，需要关停设备，更换靶材，使得生产流程变得复杂，不够灵活。
However, a single target of IGZO (specific In:Ga:Zn:O composition ratio) is conventionally formed on a substrate, and the composition ratio of the film-forming substance is determined by the target, so that the composition of the film depends on the target. By itself, it limits the choice and adjustment of the film quality. Moreover, if it is necessary to produce a metal film of different membranous components, it is necessary to shut down the equipment and replace the target, which complicates the production process and is not flexible enough.
发明内容Summary of the invention
本发明专利提供一种金属薄膜成膜工艺，可同时满足不同膜质成分比例选择的制造工艺。而且利用该方法制备的TFT元件的制作具有选择性，满足不同产品的性能要求。The invention patent provides a metal film forming process, which can simultaneously satisfy the manufacturing process of different film material composition ratios. Moreover, the TFT elements prepared by the method are selective in production to meet the performance requirements of different products.
1)本发明的涉及一种金属薄膜的生产方法，包括根据目标产品所需的不同膜质成分，使用两种以上不同成分比例的靶材，通过控制成膜速度和成膜时间，将所述靶材上的物质沉积在基板上，来得到含有不同的膜质成分的金属氧化物薄膜。1) The present invention relates to a method for producing a metal thin film comprising: using a target of two or more different composition ratios according to different film quality components required for a target product, by controlling a film forming speed and a film forming time, The substance on the target is deposited on the substrate to obtain a metal oxide film containing different film components.
2)根据本发明的第1)项所述的实施方式，所述靶材为铟镓锌氧(IGZO)靶材。2) The embodiment according to Item 1) of the present invention, wherein the target is an indium gallium zinc oxide (IGZO) target.
3)根据本发明的第1)或第2)项所述的实施方式，可使用两种不同成分比例的铟镓锌氧靶材。3) According to the embodiment described in the first or second aspect of the invention, two different composition ratios of indium gallium zinc oxide target can be used.
4)根据本发明的第3)项所述的实施方式，使用的第一靶材的In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m选自1.2-2.8，n选自1.5-3.2；使用的第二靶材的In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值介于1.0-3.0，k介于5-10。4) According to the embodiment of item 3) of the present invention, the first target used has In:Ga:Zn:O=2:m:n:9, wherein m is selected from 1.2 to 2.8, and n is selected from the group consisting of 1.5-3.2; In:Ga:Zn:O=2:2:j:k of the second target used, wherein the j value is between 1.0 and 3.0, and the k is between 5 and 10.
5)根据本发明的第1)-第4)项中任一项所述的实施方式，根据金属氧化物薄膜的薄膜阻抗(Film Resistivity)、迁移率(Mobility)和透明度(transparency)的要求，控制所述成膜速度和成膜时间得到所述金属氧化物薄膜。5) The embodiment according to any one of the first to fourth aspects of the present invention, according to the film resistivity, mobility, and transparency of the metal oxide film, The metal oxide film is obtained by controlling the film formation speed and the film formation time.
6)根据本发明的第5)项所述的实施方式，所述金属氧化物薄膜的薄膜阻抗(Film Resistivity)为0.1～1000Ω*cm。6) The embodiment according to Item 5) of the present invention, wherein the metal oxide film has a film resistance (Film Resistivity) of 0.1 to 1000 Ω*cm.
7)根据本发明的第5)或6)项所述的实施方式，所述金属氧化物薄膜的迁移率(Mobility)为10～20cm2/VS。7) The embodiment according to Item 5) or 6) of the present invention, wherein the metal oxide film has a mobility of 10 to 20 cm 2 /VS.
8)根据本发明的第5)-第7)项中任一项所述的实施方式，所述金属氧化物薄膜的的透明度大于80％。8) The embodiment according to any one of the items 5) to 7 wherein the metal oxide film has a transparency of more than 80%.
9)根据本发明的第4)-第8)项中任一项所述的实施方式，将所述第一靶材和第二靶材交错设置在同一成膜设备中，通过轰击所述交错设置的第一靶材和第二靶材来得到所述金属氧化物薄膜。9) The embodiment according to any of the 4th to 8th invention, wherein the first target and the second target are staggered in the same film forming apparatus, and the interlacing is performed by bombardment The first target and the second target are disposed to obtain the metal oxide film.
10)根据本发明的第4)-第8)项中任一项所述的实施方式，将所述第一靶材和第二靶材分别置于不同成膜设备中，将所述基板分别依次置入不同成膜设备中进行成膜，得到所述金属薄膜。10) The embodiment according to any one of the 4th to 8th, wherein the first target and the second target are respectively placed in different film forming apparatuses, respectively Film formation was carried out by sequentially placing them in different film forming apparatuses to obtain the metal thin film.
11)一种薄膜晶体管基板的生产方法，包括使用上述任一项的方法来生产金属薄膜层。11) A method of producing a thin film transistor substrate comprising producing a metal thin film layer using the method of any of the above.
12)一种根据根据本发明的第11)项所述的生产方法生产的薄膜晶体管基板。12) A thin film transistor substrate produced according to the production method according to item 11) of the present invention.
本发明的有益效果：The beneficial effects of the invention:
本发明使用有两种或以上不同In∶Ga∶Zn∶O成分比例的靶材，通过控制两者相应的成
膜速度或者靶材大小，达到在基板上成所需成分比例的半导体薄膜。使得TFT元件的制作具有选择性，满足不同产品的性能要求。The present invention uses a target having two or more different In:Ga:Zn:O composition ratios, by controlling the corresponding formation of the two
The film speed or the target size is such that a semiconductor film having a desired composition ratio on the substrate is obtained. The fabrication of TFT elements is selective to meet the performance requirements of different products.
可通过交错设置多种不同成分比例的铟镓锌氧靶材，同时在一个设备中，或者在一个工艺流程中显现不同性能的TFT金属氧化物薄膜的生产，大大简化了生产流程，缩短了生产周期，实现了效率的最大化。The production process of TFT metal oxide film with different properties can be realized by staggering a plurality of indium gallium zinc oxide targets with different composition ratios, which greatly simplifies the production process and shortens the production in one device or in a process. The cycle achieves maximum efficiency.
图1为在不同设备中分别设置的第一铟镓锌氧靶材和第二铟镓锌氧靶材。1 is a first indium gallium zinc oxide target and a second indium gallium zinc oxide target respectively disposed in different devices.
图2为在一个实施例中，同一设备中交错设置的第一铟镓锌氧靶材和第二铟镓锌氧靶材的示意图。2 is a schematic diagram of a first indium gallium zinc oxide target and a second indium gallium zinc oxide target interleaved in the same apparatus in one embodiment.
图3为在另一个实施例中，同一设备中交错设置的第一铟镓锌氧靶材和第二铟镓锌氧靶材的示意图。3 is a schematic diagram of a first indium gallium zinc oxide target and a second indium gallium zinc oxide target staggered in the same apparatus in another embodiment.
图4为在另一个实施例中，同一设备中交错设置的第一铟镓锌氧靶材和第二铟镓锌氧靶材的示意图。4 is a schematic diagram of a first indium gallium zinc oxide target and a second indium gallium zinc oxide target staggered in the same apparatus in another embodiment.
此处所用之术语仅出于描述特定实施方案的目的，并不意欲限制本发明。除非上下文中清楚地显示出另外的情况，如此处所用的单数形式“一个”和“该”也包括复数形式。还应当理解，在本说明书中使用的用语“包括”和/或“包括有”时说明了存在所述的特征、整体、步骤、操作、部件和/或构件，但不妨碍一个或多个其他特征、整体、步骤、操作、部件组、构件和/或构件组的存在或添加。The terminology used herein is for the purpose of describing particular embodiments and is not intended to limit the invention. The singular forms "a," "," It is also to be understood that the phrase "comprises" and / or "includes" is used in the specification to mean the presence of the described features, integers, steps, operations, components and/or components, but does not preclude one or more other The presence or addition of features, ensembles, steps, operations, component groups, components, and/or component groups.
例如“包括”、“包含”、“具有”、“含有”或“涉及”的用语及其变体应广泛地理解，并且包含所列出的主体以及等效物，还有未列出的另外的主体。另外，当由过渡性用语“包含”、“包括”或“含有”来引出组分、部件组、工艺或方法步骤或者任何其他的表述时，应当理解此处还考虑了相同的组分、部件组、工艺或方法步骤，或者具有在该组分、部件组、工艺或方法步骤或任何其它表述的记载之前的过渡性用语“基本上由...组成”、“由...组成”或“选自由...构成的组”的任何其它的表述。Terms such as "including", "comprising", "having", "comprising" or "comprising" and variations thereof are to be interpreted broadly, and include the listed subject and equivalents, as well as additional The main body. In addition, when the components, component groups, process or method steps or any other expressions are referred to by the transitional terms "comprising," "comprising," or "including", it is understood that the same components and components are also considered herein. Group, process or method step, or transitional phrase "consisting essentially of", "consisting of" or "consisting of" before the description of the component, component group, process or method step or any other expression Any other expression "selected from a group consisting of".
如果的适用话，权利要求中的相应的结构、材料、动作以及所有功能性的装置或步骤的等效物包括用于与权利要求中所具体陈述的其他部件相结合地来执行功能的任何结构、材料或动作。本发明的说明书出于介绍和描述的目的而提供，但并不是穷举性的或将本发
明限制到所公开的形式。在不偏离本发明的范围和精神的前提下，许多改变和变体对于本领域的普通技术人员来说是显而易见的。这里选择并描述了一些实施方案，目的是对本发明的原理和实际应用进行最佳的解释，并且使得本领域的其他普通技术人员能够理解本发明的不同实施方案具有多种变化，如同适合于该特定用途一样。相应地，尽管本发明已经依据实施方案进行了描述，然而本领域技术人员将认识到，本发明可以有所改变地并在所附权利要求的精神和范围之内实施。Where applicable, the corresponding structures, materials, acts, and equivalents of all functional means or steps in the claims include any structure for performing functions in combination with other components specifically recited in the claims. , material or action. The description of the present invention has been provided for purposes of illustration and description, and is not intended to
It is limited to the form disclosed. Many variations and modifications will be apparent to those skilled in the art without departing from the scope of the invention. The embodiments were chosen and described herein in order to best explain the principles of the invention and the embodiments of the invention Same as a specific use. Accordingly, while the invention has been described in terms of the embodiments of the invention,
现在将详细参考特定的所公开的主题。尽管所公开的主题将结合所列举的权利要求来描述，然而可以理解，它们并不将所公开的主题限制到这些权利要求中。相反，所公开的主题覆盖了所有的替代方案、改变以及等效物，这些可以包含于由权利要求所限定的所公开的主题的范围之内。Reference will now be made in detail to the specific disclosed subject matter. The disclosed subject matter will be described in conjunction with the appended claims. Rather, the disclosed subject matter is covered by the appended claims.
以下结合实施例对本发明进行详细说明，但应理解的是本发明的范围并不限于以下实施例。The invention will be described in detail below with reference to the embodiments, but it should be understood that the scope of the invention is not limited to the following examples.
在薄膜晶体管(TFT)基板制造工艺中的铟镓锌氧金属薄膜制备过程中，通过控制射频物理气相沉积(RF PVD)制程参数与靶材成分比率获得预期的膜质，其中的制程参数如下：成膜条件：O2/(Ar+O2)比为0～5％，功率为140-310W，压力为5-10mTorr，温度为15-30℃。In the preparation process of the indium gallium zinc oxide metal film in the manufacturing process of the thin film transistor (TFT) substrate, the expected film quality is obtained by controlling the RF PVD process parameters and the target composition ratio, wherein the process parameters are as follows: Film formation conditions: O 2 /(Ar+O 2 ) ratio is 0 to 5%, power is 140-310 W, pressure is 5-10 mTorr, and temperature is 15-30 °C.
实施例1Example 1
如图1所示，本实施例是利用将两种不同的铟镓锌氧(IGZO)靶材安装在两个不同的设备中。在设备A内安装第一铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为1.2，n为1.5；在设备B内安装第二铟镓锌氧靶材，第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为1.0，k为5。As shown in Figure 1, this embodiment utilizes the installation of two different indium gallium zinc oxide (IGZO) targets in two different devices. Installing a first indium gallium zinc oxide target in the device A, wherein the first indium gallium zinc oxide target has In:Ga:Zn:O=2:m:n:9, wherein the m value is 1.2 and n is 1.5; A second indium gallium zinc oxide target is mounted in the device B. In the second indium gallium zinc oxide target, In:Ga:Zn:O=2:2:j:k, wherein j is 1.0 and k is 5.
在本实施例中，通过2次RF PVD成膜，基板先后在设备A内使用第一铟镓锌氧靶材形成厚度在
的IGZO膜，其中成膜条件控制Power15～18kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在65～90s；然后在设备B内使用第二铟镓锌氧靶材形成
的IGZO膜，其中成膜条件控制Power10～15kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在290～370s。第一铟镓锌氧靶材与第二铟镓锌氧靶材分别具有具有上述特定In∶Ga∶Zn∶O四种成分比例。本实施例通过控制靶材中4种成分的比例及成膜时间或者成膜速度实现不同的膜质需求，达到满足不同膜质成分比例选择的制造工艺。
制备得到TFT元件的制作具有选择性，满足不同产品的性能要求。In this embodiment, the film is formed by the RF PVD twice, and the substrate is sequentially formed in the device A using the first indium gallium zinc oxide target. IGZO film, wherein the film forming conditions control Power 15 ~ 18kw, Ar flow 150 ~ 160sccm, O 2 flow 5 ~ 10sccm, film formation time is controlled at 65 ~ 90s; then use the second indium gallium zinc oxide target in the device B The IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 290 to 370 s. The first indium gallium zinc oxide target and the second indium gallium zinc oxide target each have a specific composition ratio of the above-mentioned In:Ga:Zn:O. In this embodiment, different film quality requirements are achieved by controlling the ratio of the four components in the target, the film formation time or the film formation speed, and the manufacturing process that satisfies the selection of different film component ratios is achieved. The preparation of the TFT element is selective to meet the performance requirements of different products.
实施例2Example 2
如图1所示，本实施例是利用将两种不同的铟镓锌氧靶材安装在两个不同的设备中。在设备A内安装第一铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为2.8，n为3.2；在设备B内安装第二铟镓锌氧靶材，第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j为3.0，k为10，As shown in Figure 1, this embodiment utilizes the installation of two different indium gallium zinc oxide targets in two different devices. Installing a first indium gallium zinc oxide target in the device A, wherein the first indium gallium zinc oxide target has In:Ga:Zn:O=2:m:n:9, wherein the m value is 2.8, and n is 3.2; A second indium gallium zinc oxide target is mounted in the device B, and the second indium gallium zinc oxide target has In:Ga:Zn:O=2:2:j:k, wherein j is 3.0 and k is 10.
在本实施例中，通过2次RF PVD成膜，基板先后在设备A内使用第一铟镓锌氧靶材形成厚度在
的IGZO膜，其中成膜条件控制Power15～18kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在270～350s；然后在设备B内使用第二铟镓锌氧靶材成
的IGZO膜，其中成膜条件控制Power10～15kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在75～105s。第一铟镓锌氧靶材与第二铟镓锌氧靶材分别具有具有上述特定In∶Ga∶Zn∶O四种成分比例。本实施例通过控制Target靶材中4种成分的比例及成膜时间或者成膜速度实现不同的膜质需求，达到满足不同膜质成分比例选择的制造工艺。制备得到的TFT元件的制作具有选择性，满足不同产品的性能要求。In this embodiment, the film is formed by the RF PVD twice, and the substrate is sequentially formed in the device A using the first indium gallium zinc oxide target. IGZO film, wherein the film forming conditions control Power 15 ~ 18kw, Ar flow 150 ~ 160sccm, O 2 flow 5 ~ 10sccm, film formation time is controlled at 270 ~ 350s; then use the second indium gallium zinc oxide target in the device B The IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 75 to 105 s. The first indium gallium zinc oxide target and the second indium gallium zinc oxide target each have a specific composition ratio of the above-mentioned In:Ga:Zn:O. In this embodiment, by controlling the ratio of the four components in the Target target, the film formation time or the film formation speed, different film quality requirements are achieved, and the manufacturing process that satisfies the ratio of different film quality components is selected. The prepared TFT element is made selectively to meet the performance requirements of different products.
实施例3Example 3
如图1所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在两个不同的设备中。在设备A内安装第一铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为2，n为2.5；在设备B内安装第二铟镓锌氧靶材，第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j为2.0，k为8，As shown in Figure 1, this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in two different devices. Installing a first indium gallium zinc oxide target in the device A, wherein the first indium gallium zinc oxide target has In:Ga:Zn:O=2:m:n:9, wherein the m value is 2 and n is 2.5; A second indium gallium zinc oxide target is mounted in the device B, and the second indium gallium zinc oxide target has In:Ga:Zn:O=2:2:j:k, wherein j is 2.0 and k is 8.
在本实施例中，通过2次RF PVD成膜，基板先后在设备A内使用第一铟镓锌氧靶材形成厚度在
的IGZO膜，其中成膜条件控制Power15～18kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在150～190s；然后在设备B内使用第二铟镓锌氧靶材成
的IGZO膜，其中成膜速度为条件控制Power10～15kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在160～210s。第一铟镓锌氧靶材与第二铟镓锌氧靶材分别具有具有上述特定In∶Ga∶Zn∶O四种成分比例。本实施例通过控制靶材中4种成分的比例及成膜时间或者成膜速度实现不同的膜质需求，达到满足不同膜质成分比例选择的制造工艺。制备得到的TFT元件的制作具有选择性，满足不同产品的性能要求。In this embodiment, the film is formed by the RF PVD twice, and the substrate is sequentially formed in the device A using the first indium gallium zinc oxide target. IGZO film, wherein the film forming conditions control Power 15 ~ 18kw, Ar flow 150 ~ 160sccm, O 2 flow 5 ~ 10sccm, film formation time is controlled at 150 ~ 190s; then use the second indium gallium zinc oxide target in equipment B The IGZO film has a film formation rate of 10 to 15 kW for power control, a flow rate of 150 to 160 sccm for Ar, a flow rate of 5 to 10 sccm for O 2 , and a film formation time of 160 to 210 s. The first indium gallium zinc oxide target and the second indium gallium zinc oxide target each have a specific composition ratio of the above-mentioned In:Ga:Zn:O. In this embodiment, different film quality requirements are achieved by controlling the ratio of the four components in the target, the film formation time or the film formation speed, and the manufacturing process that satisfies the selection of different film component ratios is achieved. The prepared TFT element is made selectively to meet the performance requirements of different products.
实施例4
Example 4
如图2所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在同一个设备中。其中本实施例的第一铟镓锌氧靶材和第二铟镓锌氧靶材如图2所示的方式进行交错设置在一个设备中。本实施例通过1次RF PVD成膜，在设备内交错安装第一铟镓锌氧靶材与第二铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为2.8，n为3.2；第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为3.0，k为10，基板在设备内使用第一铟镓锌氧靶材与第二铟镓锌氧靶材形成厚度在
的IGZO膜，其中成膜条件控制Power15～18kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间为控制在620-710s。As shown in Figure 2, this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device. The first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG. In this embodiment, a first indium gallium zinc oxide target and a second indium gallium zinc oxide target are interleaved in the apparatus by one RF PVD film formation, wherein the first indium gallium zinc oxide target is In:Ga:Zn: O=2:m:n:9, where m is 2.8 and n is 3.2; in the second indium gallium zinc oxide target, In:Ga:Zn:O=2:2:j:k, where j is 3.0 , k is 10, the substrate is formed in the device using the first indium gallium zinc oxide target and the second indium gallium zinc oxide target to form a thickness The IGZO film has a film forming condition of Control 15 to 18 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 620 to 710 s.
实施例5Example 5
如图2所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在同一个设备中。其中本实施例的第一铟镓锌氧靶材和第二铟镓锌氧靶材如图2所示的方式进行交错设置在一个设备中。本实施例通过1次RF PVD成膜，在设备内交错安装第一铟镓锌氧靶材与第二铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为1.2，n为1.5；第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为1.0，k为5，基板在设备内使用第一铟镓锌氧靶材与第二铟镓锌氧靶材形成厚度在
的IGZO膜，其中成膜条件控制Power10～15kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间控制在75～105s。As shown in Figure 2, this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device. The first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG. In this embodiment, a first indium gallium zinc oxide target and a second indium gallium zinc oxide target are interleaved in the apparatus by one RF PVD film formation, wherein the first indium gallium zinc oxide target is In:Ga:Zn: O=2:m:n:9, where m is 1.2 and n is 1.5; in the second indium gallium zinc oxide target, In:Ga:Zn:O=2:2:j:k, where j is 1.0 , k is 5, the substrate is formed in the device using the first indium gallium zinc oxide target and the second indium gallium zinc oxide target to form a thickness The IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 75 to 105 s.
实施例6Example 6
如图3所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在同一个设备中。其中本实施例的第一铟镓锌氧靶材和第二铟镓锌氧靶材如图3所示的方式进行交错设置在一个设备中。本实施例通过1次RF PVD成膜，在设备内交错安装第一铟镓锌氧靶材与第二铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为2.8，n为3.2；第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为3.0，k为10，基板在设备内使用第一铟镓锌氧靶材与第二铟镓锌氧靶材形成厚度在
的IGZO膜，其中成膜条件控制Power15～18kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间为控制在620-710s。As shown in Figure 3, this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device. The first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG. In this embodiment, a first indium gallium zinc oxide target and a second indium gallium zinc oxide target are interleaved in the apparatus by one RF PVD film formation, wherein the first indium gallium zinc oxide target is In:Ga:Zn: O=2:m:n:9, where m is 2.8 and n is 3.2; in the second indium gallium zinc oxide target, In:Ga:Zn:O=2:2:j:k, where j is 3.0 , k is 10, the substrate is formed in the device using the first indium gallium zinc oxide target and the second indium gallium zinc oxide target to form a thickness The IGZO film has a film forming condition of Control 15 to 18 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 620 to 710 s.
实施例7Example 7
如图3所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在同一个设备中。其中本实施例的第一铟镓锌氧靶材和第二铟镓锌氧靶材如图3所示的方式进行交错设置
在一个设备中。本实施例通过1次RF PVD成膜，在设备内交错安装第一铟镓锌氧靶材与第二铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为1.2，n为1.5；第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为1.0，k为5，基板在设备内使用第一铟镓锌氧靶材与第二铟镓锌氧靶材形成厚度在
的IGZO膜，其中成膜条件控制Power10～15kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间为75～105s。As shown in Figure 3, this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device. The first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG. In this embodiment, a first indium gallium zinc oxide target and a second indium gallium zinc oxide target are interleaved in the apparatus by one RF PVD film formation, wherein the first indium gallium zinc oxide target is In:Ga:Zn: O=2:m:n:9, where m is 1.2 and n is 1.5; in the second indium gallium zinc oxide target, In:Ga:Zn:O=2:2:j:k, where j is 1.0 , k is 5, the substrate is formed in the device using the first indium gallium zinc oxide target and the second indium gallium zinc oxide target to form a thickness The IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 75 to 105 s.
实施例8Example 8
如图4所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在同一个设备中。其中本实施例的第一铟镓锌氧靶材和第二铟镓锌氧靶材如图4所示的方式进行交错设置在一个设备中。本实施例通过1次RF PVD成膜，在设备内交错安装第一铟镓锌氧靶材与第二铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为2.8，n为3.2；第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为3.0，k为10，基板在设备内使用第一铟镓锌氧靶材与第二铟镓锌氧靶材形成厚度在
的IGZO膜，其中成膜条件控制Power15～18kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间为控制在620～710s。As shown in Figure 4, this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device. The first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG. In this embodiment, a first indium gallium zinc oxide target and a second indium gallium zinc oxide target are interleaved in the apparatus by one RF PVD film formation, wherein the first indium gallium zinc oxide target is In:Ga:Zn: O=2:m:n:9, where m is 2.8 and n is 3.2; in the second indium gallium zinc oxide target, In:Ga:Zn:O=2:2:j:k, where j is 3.0 , k is 10, the substrate is formed in the device using the first indium gallium zinc oxide target and the second indium gallium zinc oxide target to form a thickness The IGZO film has a film forming condition of 15 to 18 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 620 to 710 s.
实施例9Example 9
如图4所示，本实施例是利用将两种不同的铟镓锌氧金属靶材安装在同一个设备中。其中本实施例的第一铟镓锌氧靶材和第二铟镓锌氧靶材如图4所示的方式进行交错设置在一个设备中。本实施例通过1次RF PVD成膜，在设备内交错安装第一铟镓锌氧靶材与第二铟镓锌氧靶材，其中第一铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m值为1.2，n为1.5；第二铟镓锌氧靶材中In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值为1.0，k为5，基板在设备内使用第一铟镓锌氧靶材与第二铟镓锌氧靶材形成厚度在
的IGZO膜，其中成膜条件控制Power10～15kw，Ar流量150～160sccm，O2流量5～10sccm，成膜时间为75-105s。As shown in Figure 4, this embodiment utilizes the installation of two different indium gallium zinc oxymetal targets in the same device. The first indium gallium zinc oxide target and the second indium gallium zinc oxide target of the present embodiment are alternately disposed in one apparatus in the manner shown in FIG. In this embodiment, a first indium gallium zinc oxide target and a second indium gallium zinc oxide target are interleaved in the apparatus by one RF PVD film formation, wherein the first indium gallium zinc oxide target is In:Ga:Zn: O=2:m:n:9, where m is 1.2 and n is 1.5; in the second indium gallium zinc oxide target, In:Ga:Zn:O=2:2:j:k, where j is 1.0 , k is 5, the substrate is formed in the device using the first indium gallium zinc oxide target and the second indium gallium zinc oxide target to form a thickness The IGZO film has a film forming condition of 10 to 15 kW, an Ar flow rate of 150 to 160 sccm, an O 2 flow rate of 5 to 10 sccm, and a film formation time of 75 to 105 s.
应当注意的是，以上所述的实施例仅用于解释本发明，并不构成对本发明的任何限制。通过参照典型实施例对本发明进行了描述，但应当理解为其中所用的词语为描述性和解释性词汇，而不是限定性词汇。可以按规定在本发明权利要求的范围内对本发明作出修改，以及在不背离本发明的范围和精神内对本发明进行修订。尽管其中描述的本发明涉及特定的方法、材料和实施例，但是并不意味着本发明限于其中公开的特定例，相反，本发明可扩展至其他所有具有相同功能的方法和应用。
It should be noted that the above-described embodiments are only for explaining the present invention and do not constitute any limitation of the present invention. The present invention has been described with reference to the preferred embodiments thereof, but it should be understood that The invention may be modified within the scope of the appended claims, and the invention may be modified without departing from the scope and spirit of the invention. While the invention is described in terms of specific methods, materials, and embodiments, the invention is not limited to the specific examples disclosed therein. Instead, the invention can be extended to all other methods and applications having the same function.
Claims (12)
- 一种金属氧化物薄膜的制备方法，包括根据目标产品所需的不同膜质成分，使用两种以上不同成分比例的靶材，通过控制成膜速度和成膜时间，将所述靶材上的物质沉积在基板上，来得到含有不同的膜质成分的金属氧化物薄膜。A method for preparing a metal oxide film, comprising: using a target of two or more different composition ratios according to different film components required for a target product, and controlling the film forming speed and film forming time to be on the target The substance is deposited on the substrate to obtain a metal oxide film containing different film components.
- 根据权利要求1所述的方法，其中所述靶材为铟镓锌氧靶材。The method of claim 1 wherein the target is an indium gallium zinc oxide target.
- 根据权利要求2所述的方法，其中使用两种不同成分比例的铟镓锌氧靶材。The method of claim 2 wherein two different composition ratios of indium gallium zinc oxide target are used.
- 根据权利要求3所述的方法，其中使用的第一靶材的In∶Ga∶Zn∶O＝2∶m∶n∶9，其中m选自1.2-2.8，n选自1.5-3.2；使用的第二靶材的In∶Ga∶Zn∶O＝2∶2∶j∶k，其中j值介于1.0-3.0，k介于5-10。The method according to claim 3, wherein the first target used has In:Ga:Zn:O=2:m:n:9, wherein m is selected from 1.2 to 2.8, and n is selected from 1.5 to 3.2; The second target has In:Ga:Zn:O=2:2:j:k, wherein the j value is between 1.0 and 3.0, and the k is between 5 and 10.
- 根据权利要求1-4中任一项所述的方法，其中根据金属氧化物薄膜的薄膜阻抗、迁移率和透明度的要求，控制所述成膜速度和成膜时间得到所述金属氧化物薄膜。The method according to any one of claims 1 to 4, wherein the metal oxide film is obtained by controlling the film formation speed and film formation time in accordance with a film resistance, a mobility, and a transparency of a metal oxide film.
- 根据权利要求5所述的方法，其中所述金属氧化物薄膜的薄膜阻抗为0.1～1000Ω*cm。The method according to claim 5, wherein said metal oxide film has a film resistance of 0.1 to 1000 Ω*cm.
- 根据权利要求5所述的方法，其中所述金属氧化物薄膜的迁移率为10～20cm2/VS。The method according to claim 5, wherein the metal oxide film has a mobility of 10 to 20 cm 2 /VS.
- 根据权利要求5所述的方法，其中所述金属氧化物薄膜的透明度大于80％。The method of claim 5 wherein said metal oxide film has a transparency greater than 80%.
- 根据权利要求4所述的方法，其中将第一靶材和第二靶材交错设置在同一成膜设备中，通过轰击所述交错设置的第一靶材和第二靶材来得到所述金属氧化物薄膜。The method according to claim 4, wherein the first target and the second target are staggered in the same film forming apparatus, and the metal is obtained by bombarding the staggered first target and second target Oxide film.
- 根据权利要求4所述的方法，其中将所述第一靶材和第二靶材分别置于不同成膜设备中，将所述基板分别依次置入不同成膜设备中进行成膜，得到所述金属氧化物薄膜。The method according to claim 4, wherein the first target and the second target are respectively placed in different film forming apparatuses, and the substrates are sequentially placed in different film forming apparatuses to form a film, thereby obtaining a film. A metal oxide film.
- 一种薄膜晶体管基板的生产方法，包括使用权利要求1-10中任一项所述的方法来生产金属薄膜层。A method of producing a thin film transistor substrate comprising the method of producing a metal thin film layer using the method of any one of claims 1-10.
- 一种根据根据权利要求11所述的生产方法生产的薄膜晶体管基板。 A thin film transistor substrate produced according to the production method according to claim 11.
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| CN103373845A (en) * | 2012-04-13 | 2013-10-30 | 光洋应用材料科技股份有限公司 | Indium gallium zinc oxide as well as preparation method and application thereof |
| CN103451609A (en) * | 2013-08-30 | 2013-12-18 | 中国科学院西安光学精密机械研究所 | Preparation method of porous oxide semiconductor nano film |
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| CN103373845A (en) * | 2012-04-13 | 2013-10-30 | 光洋应用材料科技股份有限公司 | Indium gallium zinc oxide as well as preparation method and application thereof |
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