CN103903988B - 氧化物半导体制造方法 - Google Patents

氧化物半导体制造方法 Download PDF

Info

Publication number
CN103903988B
CN103903988B CN201210573708.7A CN201210573708A CN103903988B CN 103903988 B CN103903988 B CN 103903988B CN 201210573708 A CN201210573708 A CN 201210573708A CN 103903988 B CN103903988 B CN 103903988B
Authority
CN
China
Prior art keywords
metal
oxide target
substrate
oxide semiconductor
metal oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201210573708.7A
Other languages
English (en)
Other versions
CN103903988A (zh
Inventor
王良源
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Hongjun Electronic Technology Co ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN201210573708.7A priority Critical patent/CN103903988B/zh
Publication of CN103903988A publication Critical patent/CN103903988A/zh
Application granted granted Critical
Publication of CN103903988B publication Critical patent/CN103903988B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

一种氧化物半导体制造方法，包括：提供一基板；在基板上溅镀来自第一金属氧化物靶材上的金属离子并在基板上溅镀来自第二金属氧化物靶材上的至少两种金属离子以沉积形成氧化物半导体薄膜，并在溅镀过程中控制薄膜沉积速率以及溅镀设备挡板的使用周期来调整薄膜的成分比例，该第二金属氧化物靶材上的至少两种金属离子均不同于来自第一金属氧化物靶材上的金属离子。该种方法能够有效控制制备所得氧化物半导体薄膜的成分比例，有利于提升薄膜晶体管的制造品质。本发明还提供一种薄膜晶体管制造方法。

Description

氧化物半导体制造方法
技术领域
本发明涉及一种氧化物半导体制造方法。
背景技术
随着工艺技术的进步，薄膜晶体管已被大量应用在显示器之中，以适应显示器的薄型化和小型化等需求。薄膜晶体管一般包括栅极、漏极、源极以及沟道层等组成部分，其通过控制栅极的电压来改变沟道层的导电性，使源极和漏极之间形成导通或者截止的状态。
传统的薄膜晶体管制造方法中，沟道层(active layer,i.e.channel layer)是采用单一靶材沉积制成的氧化铟镓锌(IGZO)薄膜，该靶材的材质通常为InGaZnO4、In2Ga2ZnO7、In2O3(ZnO)m(m＝2～20)等，然而这种传统制造方法制造的沟道层薄膜，其成分比例直接由靶材的材质成分决定，而无法在沉积过程中加以控制或调整，从而影响薄膜晶体管的制造品质。
发明内容
有鉴于此，有必要提供一种能够在沉积过程中控制、调整薄膜成分的氧化物半导体制造方法。
一种氧化物半导体制造方法，包括步骤：提供一基板；在基板上溅镀来自第一金属氧化物靶材上的金属离子并在基板上溅镀来自第二金属氧化物靶材上的至少两种金属离子以沉积形成氧化物半导体薄膜，并在溅镀过程中控制薄膜沉积速率以及溅镀设备挡板的使用周期来调整薄膜的成分比例，该第二金属氧化物靶材上的至少两种金属离子均不同于来自第一金属氧化物靶材上的金属离子。
本发明提供的氧化物半导体制造方法采用双靶材在基板上沉积不同种类的金属离子以形成氧化物半导体薄膜，可以通过控制薄膜沉积速率以及调整沉积过程中靶材使用挡板的周期来调整薄膜的成分，从而有效控制制备所得氧化物半导体薄膜的成分比例，有利于提升薄膜晶体管的制造品质。
附图说明
图1是本发明实施例提供的氧化物半导体制造方法示意图。
图2是本发明实施例提供的氧化物半导体制造方法制得的薄膜晶体管沟道层的结构示意图。
图3是本发明实施例提供的薄膜晶体管制造方法制得的薄膜晶体管的结构示意图。
主要元件符号说明
薄膜晶体管 10
基板 11
绝缘缓冲层 110
第一金属氧化物靶材 12
第二金属氧化物靶材 13
氧化物半导体薄膜 14
氧化铟层 140
氧化镓锌层 142
栅极电极 15
栅绝缘层 16
源极电极 17
漏极电极 18
真空腔 20
支架 21
等离子体 22
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
参见图1，本发明第一实施例提供一种制造氧化物半导体的方法，其步骤具体如下所述。
首先，提供一基板11。所述基板11用于承载后续形成的氧化物半导体薄膜。该基板11可以是玻璃、石英、硅晶片、塑胶等。
其次，在基板11上溅镀来自第一金属氧化物靶材12上的金属离子、并在基板11上溅镀来自第二金属氧化物靶材13上的至少两种金属离子以沉积形成氧化物半导体薄膜14。该第二金属氧化物靶材上的至少两种金属离子均不同于来自第一金属氧化物靶材上的金属离子。沉积金属离子时，可在溅镀过程中控制氧化物半导体薄膜14的沉积速率以及溅镀设备挡板的使用周期来调整氧化物半导体薄膜14的成分比例。
所述第一金属氧化物靶材12为单一金属氧化物靶材，本实施例中，该第一金属氧化物靶材12可为包含有铟(In)、镓(Ga)、锌(Zn)及锡(Sn)中任意一者的金属氧化物靶材。
所述第二金属氧化物靶材13为双金属氧化物靶材，本实施例中，该第二金属氧化物靶材13可为包含有铟(In)、镓(Ga)、锌(Zn)、锡(Sn)、铝(Al)、钛(Ti)、镍(Ni)、锰(Mn)、钼(Mo)、镉(Cd)及铜(Cu)中任意两者之金属氧化物靶材。
所述溅镀可采用脉冲激光沉积(pulse laser deposition,PLD)、原子层沉积(atomic layer deposition,ALD)等方式进行。本实施例中，该基板11、第一金属氧化物靶材12、第二金属氧化物靶材13均被置入充有惰性气体的真空腔20内，并且该基板11被固定在支架21上，然后在基板11(阳极)和金属靶材第一金属氧化物靶材12、第二金属氧化物靶材13(阴极)之间加上高压直流电，由于辉光放电(glow discharge)产生的电子激发惰性气体，产生等离子体22，等离子体22将第一金属氧化物靶材12、第二金属氧化物靶材13的原子轰出，沉积在基板11上。
所述“在基板上溅镀来自第一金属氧化物靶材上的第一金属离子”与“在基板上溅镀来自第二金属氧化物靶材上的至少两种金属离子”可以交替进行或者同时进行，以在基板11上形成在特定方向上具有结晶性的结构或者单一的氧化物半导体非晶化结构。
参见图2，当第一金属氧化物靶材12为氧化铟(InO)靶材、第二金属氧化物靶材13为氧化镓锌(ZnGaO)靶材时，“在基板11上溅镀来自第一金属氧化物靶材12上的第一金属离子”与“在基板11上溅镀来自第二金属氧化物靶材13上的至少两种金属离子”交替进行，可在基板11上交替堆叠氧化铟层140和氧化镓锌层142，从而形成氧化铟镓锌(IGZO)晶体堆叠，使氧化物半导体薄膜14在垂直沉积平面方向上具有结晶构造。由于氧化镓锌和氧化铟的晶格不匹配，氧化铟只会在上、下两层氧化镓锌间形成键结，因此可以有效控制单层原子层成分，使得氧化物半导体薄膜14的成分比列得到有效控制。当然，第二金属氧化物靶材中两种不同金属的比例是可以调整的，例如，氧化镓锌中锌和镓的成分比例可做变动。
“在基板11上溅镀来自第一金属氧化物靶材12上的第一金属离子”与“在基板11上溅镀来自第二金属氧化物靶材13上的至少两种金属离子”同时进行，可在基板11上形成新的薄膜成分比例，和有效改善氧化物半导体薄膜14的成分控制，以及有效控制单层原子层成分，同时氧化物半导体薄膜的成分均匀也可以使得后续制备的薄膜晶体管的阈值电压(thresholdvoltage)分布较为集中，减低各薄膜晶体管的差异性。
本发明实施例还提供一种薄膜晶体管10的制造方法，其包括步骤：采用上述氧化物半导体制造方法在基板11上形成一沟道层；形成一个栅极电极15，该栅极电极15与沟道层之间经由一个栅绝缘层16隔开；形成一个与沟道层的第一部分接触的源极电极17，并形成一个与沟道层的第二部分接触的漏极电极18。
参见图3，本实施例中，形成在基板11上的沟道层为氧化铟镓锌层，即氧化物半导体薄膜14，薄膜晶体管10的栅极电极15形成在位于基板11上的绝缘缓冲层(Insulation buffer layer)110上，该栅极电极15与氧化物半导体薄膜14之间架设有栅绝缘层16，该源极电极17设置在氧化物半导体薄膜14的左侧并与氧化物半导体薄膜14的左端部分相接触，该漏极电极18设置在氧化物半导体薄膜14的右侧并与氧化物半导体薄膜14的右端部分相接触。
由于本发明实施例提供的氧化物半导体制造方法以及薄膜晶体管制造方法采用双靶材在基板11上沉积不同种类的金属离子以形成氧化物半导体薄膜14，可以通过控制薄膜沉积速率以及调整沉积过程中靶材使用挡板的周期来调整薄膜的成分，从而有效控制制备所得氧化物半导体薄膜14的成分比例，有利于提升薄膜晶体管10的制造品质。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (3)

1.一种氧化物半导体制造方法，包括：提供一基板；在基板上溅镀来自第一金属氧化物靶材上的金属离子并在基板上溅镀来自第二金属氧化物靶材上的至少两种金属离子以沉积形成氧化物半导体薄膜，并在溅镀过程中控制薄膜沉积速率以及溅镀设备挡板的使用周期来调整薄膜的成分比例，该第二金属氧化物靶材上的至少两种金属离子均不同于来自第一金属氧化物靶材上的金属离子；其中“在基板上溅镀来自第一金属氧化物靶材上的第一金属离子”与“在基板上溅镀来自第二金属氧化物靶材上的至少两种金属离子”交替进行。
2.如权利要求1所述的氧化物半导体制造方法，其特征在于，所述第一金属氧化物靶材为单一金属氧化物靶材。
3.如权利要求2所述的氧化物半导体制造方法，其特征在于，所述第一金属氧化物靶材为包含有铟、镓、锌或锡的金属氧化物靶材。
CN201210573708.7A 2012-12-26 2012-12-26 氧化物半导体制造方法 Active CN103903988B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210573708.7A CN103903988B (zh) 2012-12-26 2012-12-26 氧化物半导体制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210573708.7A CN103903988B (zh) 2012-12-26 2012-12-26 氧化物半导体制造方法

Publications (2)

Publication Number Publication Date
CN103903988A CN103903988A (zh) 2014-07-02
CN103903988B true CN103903988B (zh) 2017-03-08

Family

ID=50995254

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210573708.7A Active CN103903988B (zh) 2012-12-26 2012-12-26 氧化物半导体制造方法

Country Status (1)

Country Link
CN (1) CN103903988B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104392966B (zh) * 2014-12-02 2017-06-16 深圳市华星光电技术有限公司 金属氧化物薄膜的生产方法及薄膜晶体管基板的生产方法
US9685542B2 (en) * 2014-12-30 2017-06-20 Qualcomm Incorporated Atomic layer deposition of P-type oxide semiconductor thin films
CN110534418A (zh) * 2019-07-11 2019-12-03 华南理工大学 一种无铟氧化物半导体薄膜晶体管及其室温制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6364956B1 (en) * 1999-01-26 2002-04-02 Symyx Technologies, Inc. Programmable flux gradient apparatus for co-deposition of materials onto a substrate
KR101376073B1 (ko) * 2007-06-14 2014-03-21 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 어레이 기판 및 이의 제조방법
KR100889688B1 (ko) * 2007-07-16 2009-03-19 삼성모바일디스플레이주식회사 반도체 활성층 제조 방법, 그를 이용한 박막 트랜지스터의제조 방법 및 반도체 활성층을 구비하는 박막 트랜지스터

Also Published As

Publication number Publication date
CN103903988A (zh) 2014-07-02

Similar Documents

Publication Publication Date Title
CN103140929B (zh) 错列薄膜晶体管及形成错列薄膜晶体管的方法
KR101509663B1 (ko) 산화물 반도체층 형성 방법 및 이를 이용한 반도체 소자제조방법
CN104299915B (zh) 金属氧化物薄膜晶体管制备方法
JP6296463B2 (ja) 薄膜トランジスタおよびその製造方法
US20130221348A1 (en) Semiconductor thin film, method for producing the same, and thin film transistor
TW200939470A (en) Oxide semiconductor material and method for manufacturing the same, electronic device and field effect transistor
TW200915579A (en) Thin film transistor
TW200849604A (en) Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor
CN104882486B (zh) 高迁移率、高稳定性金属氧化物薄膜晶体管及其制备工艺
CN104282576B (zh) 一种金属氧化物薄膜晶体管制作方法
CN105121694B (zh) 氧化物半导体靶材、氧化物半导体膜及其制造方法、以及薄膜晶体管
CN103903988B (zh) 氧化物半导体制造方法
JP2012238763A (ja) 半導体装置及び半導体装置の製造方法
KR20100028347A (ko) 금속이 도핑된 투명 전도성 산화물 박막의 제조방법 및 이를 적용한 박막 트랜지스터
CN103545377B (zh) 一种氧化物薄膜晶体管及其制造方法
CN108766972A (zh) 薄膜晶体管及其制作方法、显示基板
CN103981483B (zh) 形成纳米晶的方法和制造有机发光显示装置的方法
TW201426879A (zh) 氧化物半導體製造方法及薄膜電晶體製造方法
KR101275801B1 (ko) 산화물 반도체 타겟
JP6252903B2 (ja) 薄膜トランジスタおよびその製造方法
EP2796589B1 (en) Method of manufacturing an organic light-emitting display
JP2014007311A (ja) 薄膜トランジスタおよびその製造方法
CN107749422A (zh) 氧化物半导体薄膜晶体管
CN104201111A (zh) 一种氧化物半导体薄膜晶体管的制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20160531

Address after: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang street, Hua Sheng Lu Yong Jingxuan commercial building 1608

Applicant after: Jinyang Shenzhen sea Network Intelligent Technology Co., Ltd.

Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two

Applicant before: Hongfujin Precise Industry (Shenzhen) Co., Ltd.

Applicant before: Hon Hai Precision Industry Co., Ltd.

C41 Transfer of patent application or patent right or utility model
CB03 Change of inventor or designer information

Inventor after: Li Liangliang

Inventor before: Zeng Jianxin

COR Change of bibliographic data
TA01 Transfer of patent application right

Effective date of registration: 20161031

Address after: 451200 Gongyi Province, Chi Town, Henan Zhuang Village Li Xiang lane, No. 13

Applicant after: Li Liangliang

Address before: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang street, Hua Sheng Lu Yong Jingxuan commercial building 1608

Applicant before: Jinyang Shenzhen sea Network Intelligent Technology Co., Ltd.

CB03 Change of inventor or designer information
CB03 Change of inventor or designer information

Inventor after: Wang Liangyuan

Inventor before: Li Liangliang

TA01 Transfer of patent application right

Effective date of registration: 20170210

Address after: Nanhua road Tianhe street 325025 Zhejiang Province, Wenzhou City Economic and Technological Development Zone No. 15 Building 5

Applicant after: Wang Liangyuan

Address before: 451200 Gongyi Province, Chi Town, Henan Zhuang Village Li Xiang lane, No. 13

Applicant before: Li Liangliang

TA01 Transfer of patent application right
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20180821

Address after: 330114 No. 34, Zou Liu natural village, Shek Tsui village, Xixia Town, Xinjian County, Nanchang, Jiangxi, 2

Patentee after: Liu Huanhuan

Address before: 325025 No. 5, Nanhua Road, Tianhe street, Wenzhou economic and Technological Development Zone, Zhejiang province 15

Patentee before: Wang Liangyuan

CP02 Change in the address of a patent holder
CP02 Change in the address of a patent holder

Address after: 210 000 No. 88 Mufu West Road, Gulou District, Nanjing, Jiangsu Province

Patentee after: Liu Huanhuan

Address before: 330114 No. 34, Zou Liu natural village, Shek Tsui village, Xixia Town, Xinjian County, Nanchang, Jiangxi, 2

Patentee before: Liu Huanhuan

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20190918

Address after: Room 1003, No. 1 Building, Electronic Information Port, Hangbu Town, Shucheng County, Luan City, Anhui Province

Patentee after: Electrine Photoelectric Technology (Anhui) Co., Ltd.

Address before: No. 88, Mufu West Road, Gulou District, Nanjing City, Jiangsu Province, 210000

Patentee before: Liu Huan Huan

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210210

Address after: 201306 room a-8124, building 1, 1758 Luchaogang Road, Nanhui new town, Pudong New Area, Shanghai

Patentee after: Shanghai Hongjun Electronic Technology Co.,Ltd.

Address before: 237000 room 1003, building 1, electronic information port, Hangbu Town, Shucheng County, Lu'an City, Anhui Province

Patentee before: Electrine Photoelectric Technology (Anhui) Co.,Ltd.