WO2016074378A1 - 顶发射白光oled器件及其制备方法、显示装置 - Google Patents

顶发射白光oled器件及其制备方法、显示装置 Download PDF

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WO2016074378A1
WO2016074378A1 PCT/CN2015/073671 CN2015073671W WO2016074378A1 WO 2016074378 A1 WO2016074378 A1 WO 2016074378A1 CN 2015073671 W CN2015073671 W CN 2015073671W WO 2016074378 A1 WO2016074378 A1 WO 2016074378A1
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layer
electrode layer
oled device
bumps
white light
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PCT/CN2015/073671
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English (en)
French (fr)
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代青
刘则
孙力
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京东方科技集团股份有限公司
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Priority to US14/888,736 priority Critical patent/US10186675B2/en
Publication of WO2016074378A1 publication Critical patent/WO2016074378A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • the present disclosure relates to the field of display technologies of organic light-emitting devices (OLEDs), and more particularly to a top-emitting white light OLED device, a method for fabricating the same, and a display device.
  • OLEDs organic light-emitting devices
  • OLED is called the third generation of fantasy display technology because of its active illumination, good temperature characteristics, low power consumption, fast response, flexibility, ultra-thin and low cost.
  • OLED flat panel display technology is tending to become more mature in mass production technology and high-speed growth in market demand.
  • OLEDs are mainly classified into two types according to the light-emitting direction, namely, a bottom-emitting OLED and a top-emitting OLED.
  • the bottom-emitting OLED refers to an OLED that emits light from the direction of the substrate
  • the top-emitting OLED refers to an OLED that emits light from the top direction of the device.
  • the top-emitting OLED can effectively improve the aperture ratio of the display panel due to the influence of the substrate, and expand the design of the TFT circuit on the substrate, enriching the selection of the electrode material, and facilitating the integration of the device and the TFT circuit.
  • top-emitting OLEDs have the advantages of improving device efficiency, narrowing the spectrum, and improving color purity, they tend to have a strong microcavity effect.
  • the microcavity effect changes the electroluminescence spectrum of the OLED with the observation angle, and the efficiency decreases significantly at a large viewing angle. That is, the microcavity effect causes the observation angle dependence of the OLED.
  • the present disclosure provides a top-emitting white light OLED device, a preparation method thereof, and a display device, which solve the problem that the conventional top-emitting white light OLED device has a lightening effect as the viewing angle becomes larger due to the microcavity effect.
  • a top-emitting white light OLED device including:
  • each of the pixel units including a first electrode layer, an organic layer and a second electrode layer disposed in a direction away from the substrate, the organic in each of the pixel units
  • the layers have a gradual cavity length that corresponds to a range of wavelengths from red to blue, respectively.
  • the first electrode layer has a periodic undulating structure toward the interface of the organic layer.
  • the periodic relief structure is a lattice structure
  • the lattice structure includes a plurality of continuously disposed bumps, or includes a plurality of spaced apart bumps and pits.
  • a height difference between valley peaks of the bumps is within a difference range of optical cavity lengths corresponding to changes in visible wavelengths, and a length between intervals of peaks or troughs of the bumps is less than or equal to the pixel unit The width.
  • the height difference between the valley peaks of the bumps is in the range of 20-150 nanometers, and the interval between the peaks or troughs of the bumps is in the range of 1-10 micrometers.
  • the bump is a hemispherical or hemispherical bump
  • the pit is a hemispherical or hemispherical pit.
  • the side shape thereof is in the form of a sinusoidal wave.
  • the top-emitting white light OLED device further includes: a resin layer under the first electrode layer, the resin layer having the same interface as the first electrode layer and having the same interface as the first electrode layer Periodically undulating structure.
  • the resin layer is made of polyimide.
  • the organic layer at least partially or completely fills in a periodic relief structure of the first electrode layer.
  • the first electrode layer is a reflective electrode
  • the second electrode layer is a translucent semi-reflective electrode
  • the present disclosure also provides a method for fabricating a top-emitting white light OLED device, comprising the steps of forming a plurality of pixel units on a substrate, wherein each of the pixel units includes a first electrode layer in a direction away from the substrate, The organic layer and the second electrode layer, the organic layer in each of the pixel units has a gradual cavity length, and the gradual cavity lengths respectively correspond to a wavelength range from red light to blue light.
  • the method specifically includes:
  • a resin layer on the substrate Forming a resin layer on the substrate, the surface of the resin layer being a lattice structure, and the lattice structure package a plurality of consecutively disposed bumps or a plurality of spaced apart bumps and pits;
  • first electrode layer Forming a first electrode layer on the resin layer, the surface of the first electrode layer being the same lattice structure as the resin layer;
  • the organic layer capable of filling at least partially or completely the undulating surface of the first electrode layer
  • a second electrode layer is formed on the organic layer.
  • the bump is a hemispherical or hemispherical structure, and the peak height difference of the bump is between 20 and 150 nanometers, and the dot spacing is 1-10. Micron.
  • the step of forming a resin layer on the substrate comprises:
  • the step of forming a resin layer on the substrate comprises:
  • the resin film is subjected to exposure development by a mask mask to form a resin layer having a lattice structure.
  • the present disclosure also provides a display device comprising the above-described top emission white light OLED device.
  • an organic layer in a pixel unit has a gradual cavity length, and the gradual cavity length corresponds to a wavelength range from red light to blue light, so that different positions of the organic layer correspond to different microcavity enhancement cavity lengths, Thereby the pixel unit can be enhanced in white light emission.
  • FIG. 1 is a schematic structural view of a conventional top-emitting white OLED device
  • FIG. 2 is a schematic structural view of a top-emitting white light OLED device according to Embodiment 1 of the present disclosure
  • FIG. 3 is a schematic diagram of an enhanced light-emitting principle of the top-emitting white OLED device of FIG. 2;
  • FIG. 4 is a schematic structural diagram of a top-emitting white light OLED device according to Embodiment 2 of the present disclosure
  • Figure 5 is a plan view of the top of the resin layer of the embodiment of the present disclosure.
  • Figure 6 is a cross-sectional view showing a resin layer of an embodiment of the present disclosure.
  • FIG. 7 is a schematic diagram of an enhanced light-emitting principle of the top-emitting white OLED device of FIG. 4;
  • FIG. 8 is a schematic structural diagram of a top-emitting white light OLED device according to Embodiment 3 of the present disclosure.
  • FIG. 9 is a schematic structural diagram of a top-emitting white OLED device according to Embodiment 4 of the present disclosure.
  • FIG. 1 is a schematic structural diagram of a conventional top-emitting white OLED device including: a glass substrate 101, a TFT functional layer and a planarization layer 102, a first electrode layer 103, an organic layer 104, and a second The electrode layer 105, and the pixel defining layer 106.
  • the direction indicated by the arrow is the light outgoing direction.
  • the cavity length of the organic layer 104 in one pixel unit is the same at different positions. Due to the microcavity effect, only one optimal wavelength of visible light is enhanced, while other wavelengths of visible light are visible. It is filtered out, which is the reason for the decrease in light intensity when a large viewing angle is obtained.
  • the embodiment of the present disclosure provides a top-emitting white light OLED device, including a plurality of pixel units on the substrate, each of which The pixel unit includes a first electrode layer, an organic layer and a second electrode layer disposed in sequence away from the substrate, and the organic layer in each of the pixel units has a gradual cavity length (ie, thickness)
  • the grading cavity lengths respectively correspond to the wavelength range from red light to blue light, so that the corresponding white light of the pixel unit is enhanced.
  • the organic layer in one pixel unit has a gradual cavity length
  • the gradual cavity lengths respectively correspond to the wavelength range from red light to blue light, so that different positions of the organic layer correspond to different microcavity enhancement cavity lengths,
  • the pixel unit can be enhanced in white light emission.
  • the first electrode layer is a bottom electrode, typically as an anode
  • the second electrode layer is a top electrode, typically as a cathode.
  • the first electrode layer is a reflective electrode, and the material thereof may be one of gold, silver, aluminum, or an alloy thereof.
  • the second electrode layer is a translucent and semi-reflective electrode which may be made of gold, silver, or an alloy thereof.
  • the top-emitting white light OLED device of the embodiments of the present disclosure may be of various structures. An example will be described below.
  • FIG. 2 is a schematic structural diagram of a top-emitting white light OLED device according to Embodiment 1 of the present disclosure.
  • the top-emitting white light OLED device includes a substrate 200, a first electrode layer 201 formed on the substrate 200, an organic layer 202 over the first electrode layer 201, and the organic layer 202.
  • the periodic relief structure is a lattice structure, and the lattice structure includes a plurality of continuously arranged bumps 2011.
  • the substrate 200 may include a base substrate, a TFT functional layer, and a planarization layer.
  • Figure 2 shows only a portion of one pixel unit.
  • FIG. 3 is a schematic diagram of the enhanced light-emitting principle of the top-emitting white OLED device of FIG.
  • the thickness of the organic layer 202 at different positions in one pixel unit is different, since the wavelength of the red visible light is about 630-780 nm, and the wavelength of the blue visible light is about 420-470 nm, so the red visible light corresponds to
  • the organic layer portion 2021 has the longest cavity length, and the organic visible portion 2023 corresponding to the blue visible light has the shortest cavity length.
  • 2022 is an organic layer portion corresponding to visible light of other colors.
  • the height difference a1 between the valley peaks of the bumps 2011 is within a difference range of the optical cavity length corresponding to the visible wavelength variation range, and the interval length b1 between the peaks (or troughs) of the bumps 2011 (ie, the fluctuation period of the peak) is less than or equal to the width of the pixel unit.
  • the height difference between the valley peaks of the bumps 2011 is in the range of 20-150 nanometers, and the interval length between the peaks (or troughs) of the bumps 2011 is 1- Within the 10 micron range.
  • the organic layer 202 may include a multilayer structure including, for example, a hole injection layer (HIL), a hole transport layer, a light emitting layer, a charge generating layer, a connecting layer, an electron transport layer, and an electron injecting layer. a plurality of layers in a hole blocking layer, an electron blocking layer, and the like. Wherein at least one of the organic layers 202 (such as a hole injection layer) has a wide thickness adjustment tolerance to at least partially or completely fill the undulating interface of the first electrode layer such that each pixel The organic layer within the cell has a gradual cavity length.
  • HIL hole injection layer
  • the bumps 2011 in the embodiment of the present disclosure are hemispherical or hemispherical bumps.
  • the bumps 2011 may also be bumps of other shapes.
  • the thickness (cavity length) of the organic layer 104 corresponding to the pixel unit is the same at different positions, the cavity length and the front view of the actual optical path are observed when viewed from a large viewing angle.
  • the length of the cavity through which the light path passes becomes longer, which causes color shift to occur.
  • the lattice structure of the first electrode layer 201 has a curved surface structure
  • the optical cavity length reflected at different positions also satisfies the gradation spectrum of the white light OLED device, and can ensure even in a large viewing angle.
  • the different positions of the pixels have approximately equal cavity lengths, so the color shift effect is also greatly reduced, and the intensity is not significantly reduced.
  • FIG. 4 is a schematic structural diagram of a top-emitting white light OLED device according to Embodiment 2 of the present disclosure.
  • the OLED device includes a substrate 200, and a resin layer 204 formed on the substrate 200, located in the resin layer. a first electrode layer 201, an organic layer 202 over the first electrode layer 201, and a second electrode layer 203 over the organic layer 202, wherein the resin layer 204 is located at the Below the electrode layer 201, the interface of the resin layer 204 toward the first electrode layer 201 has the same periodic undulating structure as the first electrode layer 201.
  • the substrate 200 may include a base substrate, a TFT functional layer, and a planarization layer.
  • the first electrode layer 201 having a reflective function is generally made of a metal material, the process of forming the first electrode layer 201 having a lattice structure on the substrate 200 alone is difficult, and thus, in the embodiment of the present disclosure, A resin layer 204 having a lattice structure is formed on the substrate 200 for molding the first electrode layer 201. Then, the first electrode layer 201 having the same lattice structure is formed on the resin layer 204 having a lattice structure to reduce the process difficulty.
  • the resin layer 204 may be made of a material such as PI (polyimide).
  • PI polyimide
  • the resin layer 204 for molding is not limited to a resin material, and may be formed of other materials that are easy to shape.
  • FIG. 5 is a top view of the top of the resin layer according to the embodiment of the present disclosure
  • FIG. 6 is a cross-sectional view of the resin layer of the embodiment of the present disclosure.
  • FIG. 7 is a schematic diagram of the enhanced light-emitting principle of the top-emitting white OLED device of FIG. 4.
  • the organic layer 202 has different thicknesses at different positions in one pixel unit due to the wavelength of red visible light.
  • the wavelength of the blue visible light is about 420 to 470 nm
  • the organic layer portion 2021 corresponding to the red visible light has the longest cavity length
  • the organic visible layer portion 2023 corresponding to the blue visible light has the shortest cavity length.
  • 2022 is an organic layer portion corresponding to visible light of other colors.
  • the height difference a2 between the valley peaks of the bumps 2011 is in the visible light wavelength variation range.
  • the interval length b2 (i.e., the undulation period of the valley peak) between the peaks (or troughs) of the bumps 2011 is less than or equal to the width of the pixel unit within a range of the difference in the optical cavity length corresponding to the circumference.
  • the height difference between the valley peaks of the bumps 2011 is in the range of 20-150 nanometers, and the interval length between the peaks (or troughs) of the bumps 2011 is 1- Within the 10 micron range.
  • the organic layer 202 may include a multilayer structure including, for example, a hole injection layer (HIL), a hole transport layer, a light emitting layer, a charge generating layer, a connecting layer, an electron transport layer, and an electron injecting layer. a plurality of layers in a hole blocking layer, an electron blocking layer, and the like. Wherein at least one of the organic layers 202 (such as a hole injection layer) has a wide thickness adjustment tolerance to at least partially or completely fill the undulating interface of the first electrode layer such that each pixel The organic layer within the cell has a gradual cavity length.
  • HIL hole injection layer
  • the organic layer 202 due to the process, it is difficult for the organic layer 202 to completely fill the undulating interface of the first electrode layer, but only partially fill, so the second electrode layer 203 above the organic layer 202 remains approximately horizontal.
  • the bumps 2011 in the embodiment of the present disclosure are hemispherical or hemispherical bumps.
  • the bumps 2011 may also be bumps of other shapes.
  • FIG. 8 is a schematic structural diagram of a top-emitting white light OLED device according to Embodiment 3 of the present disclosure.
  • the present embodiment has only the following difference: the dot matrix structure includes a plurality of spaced apart protrusions. Point 2011 and pit 2012 have a side shape that is similar to a sine wave form.
  • the height difference a3 between the valley peaks of the bumps 2011 is within a difference range of the optical cavity length corresponding to the visible wavelength variation range, and the interval length b3 between the peaks (or troughs) of the bumps 2011 (ie, the fluctuation period of the peak) is less than or equal to the width of the pixel unit.
  • the height difference between the valley peaks of the bumps 2011 is in the range of 20-150 nanometers, and the interval length between the peaks (or troughs) of the bumps 2011 is 1- Within the 10 micron range.
  • the bumps 2011 in the embodiment of the present disclosure are hemispherical or hemispherical bumps
  • the pits 2012 are hemispherical or hemispherical pits.
  • bumps 2011 And the pits 2012 can also be other shapes, as shown in FIG. 9.
  • FIG. 9 is a schematic structural diagram of a top-emitting white OLED device according to Embodiment 4 of the present disclosure.
  • the shape of the first electrode layer (bottom electrode) of the top-emitting white OLED device is changed such that the organic layers in each pixel unit have different cavity lengths at different positions, of course, in other implementations of the present disclosure.
  • the bottom electrode may be kept unchanged, and the shape of the second electrode layer (top electrode) may be changed, that is, a periodic undulating structure (such as a lattice structure) may be disposed at an interface of the second electrode layer toward the organic layer to
  • a periodic undulating structure such as a lattice structure
  • the light-emitting effect of the top-emitting white OLED device can be effectively enhanced, and significant problems such as intensity drop and color shift do not occur at a large viewing angle.
  • the process of the present disclosure is simple, and the microcavity effect of the metal mirror can be effectively utilized to improve the external quantum efficiency of the device while reducing the angular dependence of the device, and is particularly suitable for use in a large-sized OLED display.
  • the embodiment of the present disclosure further provides a method for fabricating an OLED device, including the steps of forming a plurality of pixel units on a substrate, wherein each pixel unit includes a first electrode layer, an organic layer, and sequentially along a direction away from the substrate.
  • the second electrode layer, the organic layer in each of the pixel units has a gradual cavity length, and the gradual cavity length respectively corresponds to a wavelength range from red light to blue light, so that the corresponding white light of the pixel unit is enhanced.
  • the method for preparing the OLED device specifically includes:
  • Step S11 forming a resin layer on the substrate, the surface of the resin layer being a dot matrix structure, the dot matrix structure comprising a plurality of consecutively disposed bumps, or comprising a plurality of spaced apart bumps and pits;
  • Step S12 forming a first electrode layer on the resin layer, the surface of the first electrode layer being the same lattice structure as the resin layer;
  • Step S13 forming an organic layer on the first electrode layer, the organic layer capable of filling at least part or all of the undulating surface of the first electrode layer;
  • Step S14 forming a second electrode layer on the organic layer.
  • the substrate may include a base substrate, a TFT functional layer, and a planarization layer.
  • the resin layer can be prepared by the following two methods:
  • a resin film is formed on the substrate by coating; the resin film is exposed and developed by means of a mask to form a resin layer having a lattice structure.
  • the method for preparing the top-emitting white light OLED device of the embodiment of the present disclosure includes the following steps (see FIG. 4 for the structure of the OLED device prepared by using the embodiment):
  • the resin-forming precursor ink is applied to the planarization layer by printing to form a uniform droplet dot matrix, then the solvent is removed and cross-linked and polymerized to form a resin layer having a lattice structure.
  • Each of the resin dots after curing has a hemispherical or hemispherical structure, and the peak height difference of the bumps is between 20 and 150 nanometers, and the lattice spacing is 1-10 micrometers.
  • a first electrode layer that is, a bottom electrode, is deposited on the resin layer, and the undulating shape of the resin layer is maintained.
  • the method of forming the organic layer is, wet coating, such as spin coating, printing, and dry evaporation, or a combination of the two. Preferred is a wet process which can preferably partially fill the recessed areas.
  • Another preparation method of the top-emission white OLED device of the embodiment of the present disclosure includes (see FIG. 6 for the structure of the OLED device prepared by the embodiment):
  • a first electrode layer that is, a bottom electrode, is deposited on the resin layer, and the undulating shape of the resin layer is maintained.
  • the method of forming the organic layer is, wet coating, such as spin coating, printing, and dry evaporation, or a combination of the two. Preferred is a wet process which can preferably partially fill the recessed areas.
  • the present disclosure also provides a display device comprising the top-emitting white light OLED device provided by the above embodiments.
  • the display device may be: an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like, or any product or component having a display function.

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Abstract

一种顶发射白光OLED器件及其制备方法、显示装置，该OLED器件包括位于基板（200）上的多个像素单元，每一像素单元在远离基板（200）方向上包括依次设置的第一电极层（201）、有机层（202）和第二电极层（203），其中，每一像素单元内的有机层（202）具有渐变的腔长，该渐变的腔长分别对应从红光到蓝光波长范围。

Description

顶发射白光OLED器件及其制备方法、显示装置
相关申请的交叉引用
本申请主张在2014年11月13日在中国提交的中国专利申请号No.201410640299.7的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及有机电致发光器件(Organic Light-Emitting Diode，以下简称：OLED)显示技术领域，尤其涉及一种顶发射白光OLED器件及其制备方法、显示装置。
背景技术
OLED因具备主动发光、温度特性好、功耗小、响应快、可弯曲、超轻薄和成本低等优点，而被称之为第三代梦幻显示技术。目前，在全球厂商持续资金投入与技术研发的推动下，OLED平板显示技术正趋向于量产技术日益成熟与市场需求高速增长阶段。
OLED按照出光方向主要分为两种，即：底发射OLED和顶发射OLED。底发射OLED是指光从基板方向射出的OLED，顶发射OLED是指光从器件顶部方向射出的OLED。其中，顶发射OLED因不受基板是否透光的影响，可有效提高显示面板的开口率，拓展了基板上TFT电路的设计，丰富了电极材料的选择，有利于器件与TFT电路的集成。
虽然顶发射OLED具有可以提高器件效率、窄化光谱和提高色纯度等优点，但是其往往具有较强的微腔效应。微腔效应会使OLED的电致发光光谱随观测角度变化而改变，在大视角时效率明显下降，即微腔效应会导致OLED出现观测角度依赖性问题。而这些问题对于高精度的平板显示而言是很大的缺点。
发明内容
有鉴于此，本公开提供一种顶发射白光OLED器件及其制备方法、显示装置，以解决现有的顶发射白光OLED器件由于微腔效应而造成随观察角度变大出光效果变差的问题。
为解决上述技术问题，本公开提供一种顶发射白光OLED器件，包括：
位于基板上的多个像素单元，每一所述像素单元包括沿远离所述基板方向上依次设置的第一电极层、有机层和第二电极层，每一所述像素单元内的所述有机层具有渐变的腔长，所述渐变的腔长分别对应从红光到蓝光波长范围。
可选地，所述第一电极层朝向所述有机层的界面具有周期性起伏状结构。
可选地，所述周期性起伏状结构为点阵结构，所述点阵结构包括多个连续设置的凸点，或者包括多个间隔设置的凸点和凹坑。
可选地，所述凸点的谷峰之间的高度差位于可见光波长变化对应的光学腔长的差值范围内，所述凸点的波峰或波谷之间的间隔长度小于或等于所述像素单元的宽度。
可选地，所述凸点的谷峰之间的高度差在20-150纳米范围内，所述凸点的波峰或波谷之间的间隔长度在1-10微米范围内。
可选地，所述凸点为半球状或类半球状凸点，所述凹坑为半球状或类半球状凹坑。
可选地，当所述点阵结构包括多个间隔设置的凸点和凹坑时，其侧面形状为类正弦波的形式。
可选地，所述顶发射白光OLED器件还包括：树脂层，位于所述第一电极层之下，所述树脂层朝向所述第一电极层的界面具有与所述第一电极层相同的周期性起伏状结构。可选地，所述树脂层由聚酰亚胺制成。
可选地，所述有机层至少部分或全部填平所述第一电极层的周期性起伏状结构。
可选地，所述第一电极层为反射电极，所述第二电极层为半透明半反射电极。
本公开还提供一种顶发射白光OLED器件的制备方法，包括在基板上形成多个像素单元的步骤，其中，每一所述像素单元沿远离所述基板方向上依序包括第一电极层、有机层及第二电极层，每一所述像素单元内的所述有机层具有渐变的腔长，所述渐变的腔长分别对应从红光到蓝光波长范围。
可选地，所述方法具体包括：
在基板上形成树脂层，所述树脂层的表面为点阵结构，所述点阵结构包 括多个连续设置的凸点，或者包括多个间隔设置的凸点与凹坑；
在所述树脂层上形成第一电极层，所述第一电极层的表面为与所述树脂层相同的点阵结构；
在所述第一电极层上形成有机层，所述有机层能够至少部分或全部填平所述第一电极层的起伏表面；
在所述有机层上形成第二电极层。
可选地，所述树脂层的点阵结构中，所述凸点为半球状或类半球状结构，凸点的谷峰高度差在20-150纳米之间，点阵的间隔为1-10微米。
可选地，所述在基板上形成树脂层的步骤包括：
将形成树脂的前体墨水采用打印方式涂覆到基板上，形成均匀的液滴点阵，然后除去所述液滴点阵中的溶剂并交联聚合，固化后形成具有点阵结构的所述树脂层。
可选地，所述在基板上形成树脂层的步骤包括：
采取涂覆的方式在基板上形成树脂薄膜；
利用光罩掩膜的方式对所述树脂薄膜进行曝光显影，形成具有点阵结构的树脂层。
本公开还提供一种显示装置，包括上述顶发射白光OLED器件。
本公开的上述技术方案的有益效果如下：
顶发射白光OLED器件中，一像素单元内的有机层具有渐变的腔长，该渐变的腔长分别对应从红光到蓝光波长范围，使有机层的不同位置对应不同的微腔增强腔长，从而使得所述像素单元可以得到增强的白光发射。
附图说明
图1为现有的顶发射白光OLED器件的结构示意图；
图2为本公开实施例一的顶发射白光OLED器件的结构示意图；
图3为图2中的顶发射白光OLED器件的增强出光原理示意图；
图4为本公开实施例二的顶发射白光OLED器件的结构示意图；
图5为本公开实施例的树脂层顶部的俯视图；
图6为本公开实施例的树脂层的剖面图；
图7为图4中的顶发射白光OLED器件的增强出光原理示意图；
图8为本公开实施例三的顶发射白光OLED器件的结构示意图；
图9为本公开实施例四的顶发射白光OLED器件的结构示意图。
具体实施方式
为使本公开要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
请参考图1，图1为现有的顶发射白光OLED器件的结构示意图，该OLED器件包括：玻璃基板101，TFT功能层和平坦化层102，第一电极层103，有机层104，第二电极层105，以及像素定义层106。图1中，箭头所指方向为光出射方向。
从图1中可以看出，一像素单元内的有机层104的腔长在不同位置上均是相同的，由于微腔效应，只有一种最佳波长的可见光得到增强出光，而其它波长的可见光则被过滤掉，这是导致较大的观察视角时，光强下降的原因。
为解决现有的顶发射白光OLED器件由于微腔效应而造成随观察角度变化出光效果差的问题，本公开实施例提供一种顶发射白光OLED器件，包括位于基板上的多个像素单元，每一所述像素单元包括沿远离所述基板方向上依次设置的第一电极层、有机层和第二电极层，每一所述像素单元内的所述有机层具有渐变的腔长(即厚度)，所述渐变的腔长分别对应从红光到蓝光波长范围，从而使得所述像素单元对应的白光增强。
本公开实施例中，由于一像素单元内的有机层具有渐变的腔长，该渐变的腔长分别对应从红光到蓝光波长范围，使有机层的不同位置对应不同的微腔增强腔长，从而使得所述像素单元可以得到增强的白光发射。
本公开实施例中，第一电极层为底电极，通常作为阳极，第二电极层为顶电极，通常作为阴极。所述第一电极层为反射电极，其材质可以为金、银、铝中的一种、或是它们的合金。第二电极层为半透明半反射的电极，其材质可以为金、银，或它们合金。
本公开实施例的顶发射白光OLED器件可以为多种结构。下面将举例进行说明。
实施例一
参见图2，图2为本公开实施例一的顶发射白光OLED器件的结构示意 图，所述顶发射白光OLED器件包括：基板200，形成于所述基板200上的第一电极层201，位于所述第一电极层201之上的有机层202，以及位于所述有机层202之上的第二电极层203，其中，所述第一电极层201朝向所述有机层202的界面为周期性起伏状结构。具体的该周期性起伏状结构为点阵结构，所述点阵结构包括多个连续设置的凸点2011。
其中，所述基板200可以包括衬底基板、TFT功能层及平坦化层。
图2所示仅为一个像素单元的一部分。
请参考图3，图3为图2中的顶发射白光OLED器件的增强出光原理示意图。从图中可以看出，有机层202在一个像素单元中的不同位置的厚度不同，由于红色可见光的波长约为630～780纳米，蓝色可见光的波长约为420～470纳米，因而红色可见光对应的有机层部分2021腔长最长，蓝色可见光对应的有机层部分2023的腔长最短。图中，2022为其他颜色的可见光对应的有机层部分。
可选地，所述凸点2011的谷峰之间的高度差a1位于可见光波长变化范围对应的光学腔长的差值范围内，所述凸点2011的波峰(或波谷)之间的间隔长度b1(即波峰的起伏周期)小于或等于所述像素单元的宽度。
为了有效地达到白光增强，可选地，所述凸点2011的谷峰之间的高度差在20-150纳米范围内，所述凸点2011的波峰(或波谷)之间的间隔长度在1-10微米范围内。
本公开实施例中，所述有机层202可以包括多层结构，如包括：空穴注入层(HIL)、空穴传输层、发光层、电荷产生层、连接层、电子传输层、电子注入层、空穴阻挡层、电子阻挡层等中的多层。其中，所述有机层202中的至少一层(如空穴注入层)，具有较宽的厚度调节容忍度，以至少部分或全部填平所述第一电极层的起伏界面，使得每一像素单元内的有机层具有渐变的腔长。
可选地，本公开实施例中的凸点2011为半球状或类半球状凸点，当然，在本公开的其他实施例中，凸点2011也可为其他形状的凸点。
请再次参考图1，由于像素单元对应的有机层104的厚度(腔长)在不同位置上均是相同的，在大视角观察时，实际光路经过的腔长与正面观察时 光路经过的腔长相比变长，这导致色偏发生。
本公开实施例中，由于第一电极层201的点阵结构具有曲面结构，使得不同位置反射的光学腔长也正满足白光OLED器件的渐变光谱，即使在较大的观察视角时，仍可以确保像素不同位置具有近似相等的腔长，因此，色偏效应也大大减弱，同时强度也不会明显下降。
实施例二
请参见图4，图4为本公开实施例二的顶发射白光OLED器件的结构示意图，所述OLED器件包括：基板200，形成于所述基板200上的树脂层204，位于所述树脂层之上的第一电极层201，位于所述第一电极层201之上的有机层202，以及位于所述有机层202之上的第二电极层203，其中，所述树脂层204位于所述第一电极层201之下，所述树脂层204朝向所述第一电极层201的界面具有与所述第一电极层201相同的周期性起伏状结构。
其中，所述基板200可以包括衬底基板、TFT功能层及平坦化层。
由于具有反射功能的第一电极层201通常由金属材料制成，而单独在基板200上形成具有点阵结构的第一电极层201的工艺较难，因而，本公开实施例中，可以先在基板200上形成一具有点阵结构的树脂层204，用于为第一电极层201造型。而后，在具有点阵结构的树脂层204上形成具有相同点阵结构的第一电极层201，以降低工艺难度。
所述树脂层204可以由PI(聚酰亚胺)等材料制成。当然，用于造型的该树脂层204不仅限于树脂材料，也可以采用容易造型的其他材料形成。
请参考图5和图6，图5为本公开实施例的树脂层顶部的俯视图，图6为本公开实施例的树脂层的剖面图。
请参考图7，图7为图4中的顶发射白光OLED器件的增强出光原理示意图，从图中可以看出，有机层202在一个像素单元中的不同位置的厚度不同，由于红色可见光的波长约为630～780纳米，蓝色可见光的波长约为420～470纳米，因而红色可见光对应的有机层部分2021腔长最长，蓝色可见光对应的有机层部分2023的腔长最短。图中，2022为其他颜色的可见光对应的有机层部分。
可选地，所述凸点2011的谷峰之间的高度差a2位于可见光波长变化范 围对应的光学腔长的差值范围内，所述凸点2011的波峰(或波谷)之间的间隔长度b2(即谷峰的起伏周期)小于或等于所述像素单元的宽度。
为了有效地达到白光增强，可选地，所述凸点2011的谷峰之间的高度差在20-150纳米范围内，所述凸点2011的波峰(或波谷)之间的间隔长度在1-10微米范围内。
本公开实施例中，所述有机层202可以包括多层结构，如包括：空穴注入层(HIL)、空穴传输层、发光层、电荷产生层、连接层、电子传输层、电子注入层、空穴阻挡层、电子阻挡层等中的多层。其中，所述有机层202中的至少一层(如空穴注入层)，具有较宽的厚度调节容忍度，以至少部分或全部填平所述第一电极层的起伏界面，使得每一像素单元内的有机层具有渐变的腔长。
本公开实施例中，由于工艺原因，有机层202难以完全将第一电极层的起伏界面填平，只是部分填平，因此有机层202之上的第二电极层203保持近似水平。
可选地，本公开实施例中的凸点2011为半球状或类半球状凸点。当然，在本公开的其他实施例中，凸点2011也可为其他形状的凸点。
实施例三
请参见图8，图8为本公开实施例三的顶发射白光OLED器件的结构示意图，本实施例与实施例二相比，仅具有以下区别：所述点阵结构包括多个间隔设置的凸点2011和凹坑2012，其侧面形状为类似正弦波的形式。
可选地，所述凸点2011的谷峰之间的高度差a3位于可见光波长变化范围对应的光学腔长的差值范围内，所述凸点2011的波峰(或波谷)之间的间隔长度b3(即波峰的起伏周期)小于或等于所述像素单元的宽度。
为了有效地达到白光增强，可选地，所述凸点2011的谷峰之间的高度差在20-150纳米范围内，所述凸点2011的波峰(或波谷)之间的间隔长度在1-10微米范围内。
实施例四
可选地，本公开实施例中的凸点2011为半球状或类半球状凸点，凹坑2012为半球状或类半球状凹坑。当然，在本公开的其他实施例中，凸点2011 和凹坑2012也可为其他形状，如图9所示，图9为本公开实施例四的顶发射白光OLED器件的结构示意图。
上述实施例中，通过改变顶发射白光OLED器件的第一电极层(底电极)的形状，以使得每一像素单元内有机层在不同位置具有不同的腔长，当然，在本公开的其他实施例中，也可以保持底电极不变，改变第二电极层(顶电极)的形状，即在第二电极层朝向所述有机层的界面设置周期性起伏状结构(如点阵结构)，以使得每一像素单元内的有机层在不同位置具有不同的腔长，或者，也可以仅改变有机层本身的厚度，使得每一像素单元内的有机层在不同位置具有不同的腔长。
上述实施例的OLED器件具有如下优点：
(1)可以有效增强顶发射白光OLED器件的出光效果，并且在较大的观察视角时不会发生明显的强度下降和色偏等问题。
(2)本公开工艺简单，可以有效利用金属镜的微腔效应，达到提高器件的外量子效率的同时，并降低器件的角度依赖性，尤其适合用在大尺寸OLED显示屏方面。
本公开实施例还提供一种OLED器件的制备方法，包括在基板上形成多个像素单元的步骤，其中，每一像素单元沿远离所述基板方向上依序包括第一电极层、有机层及第二电极层，每一所述像素单元内的所述有机层具有渐变的腔长，所述渐变的腔长分别对应从红光到蓝光波长范围，使得所述像素单元对应的白光增强。
可选地，所述OLED器件的制备方法具体包括：
步骤S11：在基板上形成树脂层，所述树脂层的表面为点阵结构，所述点阵结构包括多个连续设置的凸点，或者包括多个间隔设置的凸点与凹坑；
步骤S12：在所述树脂层上形成第一电极层，所述第一电极层的表面为与所述树脂层相同的点阵结构；
步骤S13：在所述第一电极层上形成有机层，所述有机层能够至少部分或全部填平所述第一电极层的起伏表面；
步骤S14：在所述有机层上形成第二电极层。
所述基板可以包括衬底基板、TFT功能层及平坦化层。
所述树脂层可以采用以下两种方法制备：
方法一：
将形成树脂的前体墨水采用打印方式涂覆到基板上，形成均匀的液滴点阵，然后除去所述液滴点阵中的溶剂并交联聚合，固化后形成具有点阵结构的所述树脂层。
方法二：
采取涂覆的方式在基板上形成树脂薄膜；利用光罩掩膜的方式对所述树脂薄膜进行曝光显影，形成具有点阵结构的树脂层。
本公开实施例的顶发射白光OLED器件的制备方法包括以下步骤(采用本实施例制备的OLED器件的结构请参见图4)：
(1)将形成树脂的前体墨水采用打印方式涂覆到平坦化层上，形成均匀的液滴点阵，然后除去溶剂并交联聚合，固化后形成具有一层点阵结构的树脂层，固化后的每一个树脂点为半球状或类半球状结构，凸点的谷峰高度差在20-150纳米之间，点阵的间隔为1-10微米。
(2)在该树脂层上沉积第一电极层，也即底电极，并保持树脂层的起伏形状。
(3)在该第一电极层上依次沉积有机层，其中有机层中的至少一层，如空穴注入层，具有较宽的厚度调节容忍度，其可以部分填平第一电极层的起伏形状，使两电极层间的有机层厚度随着底电极高低起伏变化具有相应的调节。形成有机层的方法有，湿法涂覆，如旋涂、打印，和干法蒸镀，或者两者的结合。优选的是湿法方式，其可以较好的部分填平凹陷区域。
(4)在有机层上沉积第二电极层，即顶电极，并封装。
本公开实施例的顶发射白光OLED器件的另一制备方法包括(采用本实施例制备的OLED器件的结构请参见图6)：
(1)在平坦化层上采取涂覆的方式形成树脂层，利用光罩掩膜的方式对该树脂层进行曝光显影，控制曝光工艺，形成半球状凸起和碗状凹陷相间的点阵结构，凸点的谷峰高度差在20-150纳米之间，周期间隔为1到10微米。
(2)在该树脂层上沉积第一电极层，也即底电极，并保持树脂层的起伏形状。
(3)在该第一电极层上依次沉积有机层，其中有机层中的至少一层，如空穴注入层，具有较宽的厚度调节容忍度，其可以部分填平第一电极层的起伏形状，使两电极层间的有机层厚度随着底电极高低起伏变化具有相应的调节。形成有机层的方法有，湿法涂覆，如旋涂、打印，和干法蒸镀，或者两者的结合。优选的是湿法方式，其可以较好的部分填平凹陷区域。
(4)在有机层上沉积第二电极层，即顶电极，并封装。
本公开还提供一种显示装置，包括上述实施例提供的顶发射白光OLED器件。所述显示装置可以为：OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
以上所述是本公开的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本公开所述原理的前提下，还可以作出若干改进和润饰，这些改进和润饰也应视为本公开的保护范围。

Claims (17)

  1. 一种顶发射白光OLED器件，包括位于基板上的多个像素单元，每一所述像素单元包括沿远离所述基板方向上依次设置的第一电极层、有机层和第二电极层，其中，每一所述像素单元内的所述有机层具有渐变的腔长，所述渐变的腔长分别对应从红光到蓝光波长范围。
  2. 根据权利要求1所述的顶发射白光OLED器件，其中，所述第一电极层朝向所述有机层的界面具有周期性起伏状结构。
  3. 根据权利要求2所述的顶发射白光OLED器件，其中，所述周期性起伏状结构为点阵结构，所述点阵结构包括多个连续设置的凸点，或者包括多个间隔设置的凸点和凹坑。
  4. 根据权利要求3所述的顶发射白光OLED器件，其中，所述凸点的谷峰之间的高度差位于可见光波长变化对应的光学腔长的差值范围内，所述凸点的波峰或波谷之间的间隔长度小于或等于所述像素单元的宽度。
  5. 根据权利要求4所述的顶发射白光OLED器件，其中，所述凸点的谷峰之间的高度差在20-150纳米范围内，所述凸点的波峰或波谷之间的间隔长度在1-10微米范围内。
  6. 根据权利要求3所述的顶发射白光OLED器件，其中，所述凸点为半球状或类半球状凸点，所述凹坑为半球状或类半球状凹坑。
  7. 根据权利要求3所述的顶发射白光OLED器件，其中，当所述点阵结构包括多个间隔设置的凸点和凹坑时，其侧面形状为类正弦波的形式。
  8. 根据权利要求2所述的顶发射白光OLED器件，还包括：树脂层，位于所述第一电极层之下，所述树脂层朝向所述第一电极层的界面具有与所述第一电极层相同的周期性起伏状结构。
  9. 根据权利要求8所述的顶发射白光OLED器件，所述树脂层由聚酰亚胺制成。
  10. 根据权利要求2所述的顶发射白光OLED器件，其中，所述有机层至少部分或全部填平所述第一电极层的周期性起伏状结构。
  11. 根据权利要求1-10任一项所述的顶发射白光OLED器件，其中，所述 第一电极层为反射电极，所述第二电极层为半透明半反射电极。
  12. 一种顶发射白光OLED器件的制备方法，包括在基板上形成多个像素单元的步骤，其中，每一所述像素单元沿远离所述基板方向上依序包括第一电极层、有机层及第二电极层，每一所述像素单元内的所述有机层具有渐变的腔长，所述渐变的腔长分别对应从红光到蓝光波长范围。
  13. 根据权利要求12所述的制备方法，其中，所述方法具体包括：
    在基板上形成树脂层，所述树脂层的表面为点阵结构，所述点阵结构包括多个连续设置的凸点，或者包括多个间隔设置的凸点与凹坑；
    在所述树脂层上形成第一电极层，所述第一电极层的表面为与所述树脂层相同的点阵结构；
    在所述第一电极层上形成有机层，所述有机层能够至少部分或全部填平所述第一电极层的起伏表面；
    在所述有机层上形成第二电极层。
  14. 根据权利要求13所述的制备方法，其中，
    所述树脂层的点阵结构中，所述凸点为半球状或类半球状结构，凸点的谷峰高度差在20-150纳米之间，点阵的间隔为1-10微米。
  15. 根据权利要求13所述的制备方法，其中，所述在基板上形成树脂层的步骤包括：
    将形成树脂的前体墨水采用打印方式涂覆到基板上，形成均匀的液滴点阵，然后除去所述液滴点阵中的溶剂并交联聚合，固化后形成具有点阵结构的所述树脂层。
  16. 根据权利要求13所述的制备方法，其中，所述在基板上形成树脂层的步骤包括：
    采取涂覆的方式在基板上形成树脂薄膜；
    利用光罩掩膜的方式对所述树脂薄膜进行曝光显影，形成具有点阵结构的树脂层。
  17. 一种显示装置，包括权利要求1-11中任一项所述的顶发射白光OLED器件。
PCT/CN2015/073671 2014-11-13 2015-03-05 顶发射白光oled器件及其制备方法、显示装置 WO2016074378A1 (zh)

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