WO2016072005A1 - Cellule solaire - Google Patents
Cellule solaire Download PDFInfo
- Publication number
- WO2016072005A1 WO2016072005A1 PCT/JP2014/079521 JP2014079521W WO2016072005A1 WO 2016072005 A1 WO2016072005 A1 WO 2016072005A1 JP 2014079521 W JP2014079521 W JP 2014079521W WO 2016072005 A1 WO2016072005 A1 WO 2016072005A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- crystalline
- polarity
- heavily doped
- polar
- Prior art date
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 307
- 238000002161 passivation Methods 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 239000011810 insulating material Substances 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 128
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 230000006798 recombination Effects 0.000 abstract description 38
- 238000005215 recombination Methods 0.000 abstract description 38
- 230000009467 reduction Effects 0.000 abstract description 6
- 229910006990 Si1-xGex Inorganic materials 0.000 abstract 3
- 229910007020 Si1−xGex Inorganic materials 0.000 abstract 3
- 210000004027 cell Anatomy 0.000 description 164
- 238000000034 method Methods 0.000 description 73
- 238000004519 manufacturing process Methods 0.000 description 67
- 230000015572 biosynthetic process Effects 0.000 description 36
- 239000000203 mixture Substances 0.000 description 32
- 238000009792 diffusion process Methods 0.000 description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 230000000694 effects Effects 0.000 description 15
- 229910052698 phosphorus Inorganic materials 0.000 description 15
- 239000011574 phosphorus Substances 0.000 description 15
- 238000000059 patterning Methods 0.000 description 14
- 239000002019 doping agent Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 230000007547 defect Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 9
- 230000031700 light absorption Effects 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000010248 power generation Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 4
- 230000004913 activation Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910021488 crystalline silicon dioxide Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
L'invention concerne une cellule solaire qui est conçue de telle sorte que la cellule solaire comporte : un substrat de Si cristallin doté d'une première polarité (11); une couche tampon de Ge (12) formée sur une surface du substrat de Si cristallin doté de la première polarité (11); une couche de Ge cristallin (13) formée sur une surface de la couche tampon de Ge (12); une couche de Si1-xGex cristallin dotée d'une seconde polarité (14) formée sur une surface de la couche de Ge cristallin (13); une couche de Si cristallin dotée de la seconde polarité (15) formée sur une surface de la couche de Si1-xGex cristallin dotée de la seconde polarité (14); une couche de passivation (16) formée sur une surface (15) de la couche de Si cristallin dotée de la seconde polarité, ladite couche de passivation étant constituée d'un matériau isolant; une couche de Si cristallin dopée à concentration élevée dotée de la seconde polarité (31) formée à l'intérieur d'un même plan dans lequel est formée la couche de Si cristallin dotée de la seconde polarité (15); et une électrode de surface (21) formée sur une surface de la couche de Si cristallin dopée à concentration élevée dotée de la seconde polarité (31). La cellule solaire est également conçue de telle sorte que la largeur de la couche de Si cristallin dopée à concentration élevée dotée de la seconde polarité (31) au niveau de l'interface entre la couche de Si cristallin dopée à concentration élevée dotée de la seconde polarité (31) et l'électrode de surface (21) est supérieure à la largeur de la couche de Si cristallin dopée à concentration élevée dotée de la seconde polarité (31) au niveau de l'interface entre la couche de Si cristallin dopée à concentration élevée dotée de la seconde polarité (31) et la couche de Si1-xGex cristallin dotée de la seconde polarité (14). En conséquence, l'invention fournit une cellule solaire très efficace, permettant à la fois une utilisation de génération multiexciton et une réduction de perte de recombinaison des porteurs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2014/079521 WO2016072005A1 (fr) | 2014-11-07 | 2014-11-07 | Cellule solaire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2014/079521 WO2016072005A1 (fr) | 2014-11-07 | 2014-11-07 | Cellule solaire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2016072005A1 true WO2016072005A1 (fr) | 2016-05-12 |
Family
ID=55908757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2014/079521 WO2016072005A1 (fr) | 2014-11-07 | 2014-11-07 | Cellule solaire |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2016072005A1 (fr) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006073833A (ja) * | 2004-09-02 | 2006-03-16 | Sharp Corp | 太陽電池セルおよびその製造方法 |
| WO2010075606A1 (fr) * | 2008-12-29 | 2010-07-08 | Shaun Joseph Cunningham | Dispositif photo-voltaïque amélioré |
| WO2010094919A2 (fr) * | 2009-02-19 | 2010-08-26 | Iqe Silicon Compounds Limited | Cellule photovoltaïque |
| WO2011012382A2 (fr) * | 2009-07-31 | 2011-02-03 | International Business Machines Corporation | Structure basée sur une tranche de silicium pour cellules solaires à hétérostructure |
| US20110120538A1 (en) * | 2009-10-23 | 2011-05-26 | Amberwave, Inc. | Silicon germanium solar cell |
-
2014
- 2014-11-07 WO PCT/JP2014/079521 patent/WO2016072005A1/fr active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006073833A (ja) * | 2004-09-02 | 2006-03-16 | Sharp Corp | 太陽電池セルおよびその製造方法 |
| WO2010075606A1 (fr) * | 2008-12-29 | 2010-07-08 | Shaun Joseph Cunningham | Dispositif photo-voltaïque amélioré |
| WO2010094919A2 (fr) * | 2009-02-19 | 2010-08-26 | Iqe Silicon Compounds Limited | Cellule photovoltaïque |
| WO2011012382A2 (fr) * | 2009-07-31 | 2011-02-03 | International Business Machines Corporation | Structure basée sur une tranche de silicium pour cellules solaires à hétérostructure |
| US20110120538A1 (en) * | 2009-10-23 | 2011-05-26 | Amberwave, Inc. | Silicon germanium solar cell |
Non-Patent Citations (3)
| Title |
|---|
| J.WEBER: "Near-band-gap photoluminescence of Si-Ge alloys", PHYSICAL REVIEW B, vol. 40, no. 8, 1989, pages 5683 - 5693 * |
| M.WOLF: "Solar cell efficiency and carrier multiplication in Sil-xGex alloys", JOURNAL OF APPLIED PHYSICS, vol. 83, no. 8, 1998, pages 4213 - 4221, XP012045017, DOI: doi:10.1063/1.367177 * |
| R.OSHIMA: "Fabrication of 0.9 eV bandgap a- Si/c-Sil-xGex heterojunction solar cells", IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE, 2014, pages 0202 - 0205 * |
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