WO2016065681A1 - 一种白色有机电致发光器件及其制备方法 - Google Patents
一种白色有机电致发光器件及其制备方法 Download PDFInfo
- Publication number
- WO2016065681A1 WO2016065681A1 PCT/CN2014/091786 CN2014091786W WO2016065681A1 WO 2016065681 A1 WO2016065681 A1 WO 2016065681A1 CN 2014091786 W CN2014091786 W CN 2014091786W WO 2016065681 A1 WO2016065681 A1 WO 2016065681A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- bis
- light
- electron
- phenyl
- Prior art date
Links
- 238000002360 preparation method Methods 0.000 title claims description 8
- 239000000463 material Substances 0.000 claims abstract description 197
- 230000004048 modification Effects 0.000 claims abstract description 59
- 238000012986 modification Methods 0.000 claims abstract description 59
- 230000000903 blocking effect Effects 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000001704 evaporation Methods 0.000 claims description 70
- 230000008020 evaporation Effects 0.000 claims description 70
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 54
- 229910052707 ruthenium Inorganic materials 0.000 claims description 54
- 239000007983 Tris buffer Substances 0.000 claims description 49
- 229910052799 carbon Inorganic materials 0.000 claims description 42
- 230000001235 sensitizing effect Effects 0.000 claims description 36
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 claims description 31
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 30
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims description 27
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 claims description 21
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 20
- -1 2,6-diisopropylphenyl Chemical group 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 15
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 13
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 12
- UFWDOFZYKRDHPB-UHFFFAOYSA-N 9-[3-[6-(3-carbazol-9-ylphenyl)pyridin-2-yl]phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC(C=2C=CC=C(N=2)C=2C=CC=C(C=2)N2C3=CC=CC=C3C3=CC=CC=C32)=CC=C1 UFWDOFZYKRDHPB-UHFFFAOYSA-N 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 10
- FSEXLNMNADBYJU-UHFFFAOYSA-N alpha-Phenylquinoline Natural products C1=CC=CC=C1C1=CC=C(C=CC=C2)C2=N1 FSEXLNMNADBYJU-UHFFFAOYSA-N 0.000 claims description 9
- 235000010290 biphenyl Nutrition 0.000 claims description 9
- 239000004305 biphenyl Substances 0.000 claims description 9
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- RFDGVZHLJCKEPT-UHFFFAOYSA-N tris(2,4,6-trimethyl-3-pyridin-3-ylphenyl)borane Chemical group CC1=C(B(C=2C(=C(C=3C=NC=CC=3)C(C)=CC=2C)C)C=2C(=C(C=3C=NC=CC=3)C(C)=CC=2C)C)C(C)=CC(C)=C1C1=CC=CN=C1 RFDGVZHLJCKEPT-UHFFFAOYSA-N 0.000 claims description 8
- HKEWOTUTAYJWQJ-UHFFFAOYSA-N 2-(1h-pyrazol-5-yl)pyridine Chemical compound N1N=CC=C1C1=CC=CC=N1 HKEWOTUTAYJWQJ-UHFFFAOYSA-N 0.000 claims description 7
- UXJDSNKBYFJNDO-UHFFFAOYSA-N 9-[4-[2-[2-(4-carbazol-9-ylphenyl)phenyl]phenyl]phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C(C=C1)=CC=C1C1=CC=CC=C1C1=CC=CC=C1C1=CC=C(N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 UXJDSNKBYFJNDO-UHFFFAOYSA-N 0.000 claims description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 7
- DETFWTCLAIIJRZ-UHFFFAOYSA-N triphenyl-(4-triphenylsilylphenyl)silane Chemical compound C1=CC=CC=C1[Si](C=1C=CC(=CC=1)[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 DETFWTCLAIIJRZ-UHFFFAOYSA-N 0.000 claims description 7
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 claims description 6
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 6
- 125000006267 biphenyl group Chemical group 0.000 claims description 6
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 claims description 6
- 239000011368 organic material Substances 0.000 claims description 6
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 6
- SSABEFIRGJISFH-UHFFFAOYSA-N 2-(2,4-difluorophenyl)pyridine Chemical compound FC1=CC(F)=CC=C1C1=CC=CC=N1 SSABEFIRGJISFH-UHFFFAOYSA-N 0.000 claims description 5
- GEQBRULPNIVQPP-UHFFFAOYSA-N 2-[3,5-bis(1-phenylbenzimidazol-2-yl)phenyl]-1-phenylbenzimidazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=C1C1=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=CC(C=2N(C3=CC=CC=C3N=2)C=2C=CC=CC=2)=C1 GEQBRULPNIVQPP-UHFFFAOYSA-N 0.000 claims description 5
- LPCWDYWZIWDTCV-UHFFFAOYSA-N 1-phenylisoquinoline Chemical compound C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 LPCWDYWZIWDTCV-UHFFFAOYSA-N 0.000 claims description 4
- WCXKTQVEKDHQIY-UHFFFAOYSA-N 3-[3-[3-(3,5-dipyridin-3-ylphenyl)phenyl]-5-pyridin-3-ylphenyl]pyridine Chemical compound C1=CN=CC(C=2C=C(C=C(C=2)C=2C=NC=CC=2)C=2C=C(C=CC=2)C=2C=C(C=C(C=2)C=2C=NC=CC=2)C=2C=NC=CC=2)=C1 WCXKTQVEKDHQIY-UHFFFAOYSA-N 0.000 claims description 4
- ITQTTZVARXURQS-UHFFFAOYSA-N 3-methylpyridine Chemical compound CC1=CC=CN=C1 ITQTTZVARXURQS-UHFFFAOYSA-N 0.000 claims description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- JMTCQDNRTSGBGC-UHFFFAOYSA-N 2-(3-methylphenyl)pyridine Chemical compound CC1=CC=CC(C=2N=CC=CC=2)=C1 JMTCQDNRTSGBGC-UHFFFAOYSA-N 0.000 claims description 3
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 claims description 3
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 claims description 3
- QLPKTAFPRRIFQX-UHFFFAOYSA-N 2-thiophen-2-ylpyridine Chemical compound C1=CSC(C=2N=CC=CC=2)=C1 QLPKTAFPRRIFQX-UHFFFAOYSA-N 0.000 claims description 3
- QTFAAANEVUFEHQ-UHFFFAOYSA-N C1(=CC=CC=C1)[Si](C1(CC=C(C=C1)[Si](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 Chemical group C1(=CC=CC=C1)[Si](C1(CC=C(C=C1)[Si](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 QTFAAANEVUFEHQ-UHFFFAOYSA-N 0.000 claims description 3
- IZOWAAYDURJWLW-UHFFFAOYSA-N CC1=C(C(=CC(=C1C=1C=NC=CC=1)C)C)B Chemical compound CC1=C(C(=CC(=C1C=1C=NC=CC=1)C)C)B IZOWAAYDURJWLW-UHFFFAOYSA-N 0.000 claims description 3
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 claims description 3
- XHEDDGGTACMLQF-UHFFFAOYSA-N [Ru].C1(=CC=CC=C1)C1=NC=CC2=CC=CC=C12.C1(=CC=CC=C1)C1=NC=CC2=CC=CC=C12.C1(=CC=CC=C1)C1=NC=CC2=CC=CC=C12 Chemical compound [Ru].C1(=CC=CC=C1)C1=NC=CC2=CC=CC=C12.C1(=CC=CC=C1)C1=NC=CC2=CC=CC=C12.C1(=CC=CC=C1)C1=NC=CC2=CC=CC=C12 XHEDDGGTACMLQF-UHFFFAOYSA-N 0.000 claims description 3
- MKLGVVZWXXIIRH-UHFFFAOYSA-N [Ru].C1(=CC=CC=C1)C1=NNC=C1.C1(=CC=CC=C1)C1=NNC=C1.C1(=CC=CC=C1)C1=NNC=C1 Chemical compound [Ru].C1(=CC=CC=C1)C1=NNC=C1.C1(=CC=CC=C1)C1=NNC=C1.C1(=CC=CC=C1)C1=NNC=C1 MKLGVVZWXXIIRH-UHFFFAOYSA-N 0.000 claims description 3
- ZTLUNQYQSIQSFK-UHFFFAOYSA-N n-[4-(4-aminophenyl)phenyl]naphthalen-1-amine Chemical compound C1=CC(N)=CC=C1C(C=C1)=CC=C1NC1=CC=CC2=CC=CC=C12 ZTLUNQYQSIQSFK-UHFFFAOYSA-N 0.000 claims description 3
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 claims description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 3
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 claims description 3
- DUXRDJNQKDYVNE-UHFFFAOYSA-N 2-[5-(trifluoromethyl)-1h-pyrazol-3-yl]pyridine Chemical compound N1C(C(F)(F)F)=CC(C=2N=CC=CC=2)=N1 DUXRDJNQKDYVNE-UHFFFAOYSA-N 0.000 claims description 2
- VHMICKWLTGFITH-UHFFFAOYSA-N 2H-isoindole Chemical compound C1=CC=CC2=CNC=C21 VHMICKWLTGFITH-UHFFFAOYSA-N 0.000 claims description 2
- INJFPDGDCKCFHY-UHFFFAOYSA-N 3,5-dimethyl-2-(1h-pyrazol-5-yl)pyridine Chemical compound CC1=CC(C)=CN=C1C1=CC=NN1 INJFPDGDCKCFHY-UHFFFAOYSA-N 0.000 claims description 2
- GFMFFNAOXIHABA-UHFFFAOYSA-N 3-[2-[2-[3-(4-methyl-n-(4-methylphenyl)anilino)phenyl]phenyl]phenyl]-n,n-bis(4-methylphenyl)aniline Chemical group C1=CC(C)=CC=C1N(C=1C=C(C=CC=1)C=1C(=CC=CC=1)C=1C(=CC=CC=1)C=1C=C(C=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 GFMFFNAOXIHABA-UHFFFAOYSA-N 0.000 claims description 2
- CACRNPYZAWUISI-UHFFFAOYSA-N C1(=CC=CC2=CC=CC=C12)N(C1=CC=2C(C3=CC(=CC=C3CC2C=C1)N(C1=CC=CC=C1)C1=CC=CC2=CC=CC=C12)(C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1 Chemical compound C1(=CC=CC2=CC=CC=C12)N(C1=CC=2C(C3=CC(=CC=C3CC2C=C1)N(C1=CC=CC=C1)C1=CC=CC2=CC=CC=C12)(C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1 CACRNPYZAWUISI-UHFFFAOYSA-N 0.000 claims description 2
- QJQYVJJBJMRPSA-UHFFFAOYSA-N CC=1C=C(C=CC1)N(C1=CC=2C(C3=CC(=CC=C3CC2C=C1)N(C1=CC=CC=C1)C1=CC(=CC=C1)C)(C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1 Chemical compound CC=1C=C(C=CC1)N(C1=CC=2C(C3=CC(=CC=C3CC2C=C1)N(C1=CC=CC=C1)C1=CC(=CC=C1)C)(C1=CC=CC=C1)C1=CC=CC=C1)C1=CC=CC=C1 QJQYVJJBJMRPSA-UHFFFAOYSA-N 0.000 claims description 2
- QRUGSKWDRCVCSC-UHFFFAOYSA-N [Ru].C(C)(=O)CC(C)=O.CC1=NC2=C3C(=C4C(=C2N=C1)C=CC=C4)C=CC=C3.CC3=NC4=C1C(=C2C(=C4N=C3)C=CC=C2)C=CC=C1 Chemical compound [Ru].C(C)(=O)CC(C)=O.CC1=NC2=C3C(=C4C(=C2N=C1)C=CC=C4)C=CC=C3.CC3=NC4=C1C(=C2C(=C4N=C3)C=CC=C2)C=CC=C1 QRUGSKWDRCVCSC-UHFFFAOYSA-N 0.000 claims description 2
- HHPNNCLDDZHGIV-UHFFFAOYSA-N [Ru].C1(=CC=C(C=C1)C1=NC=CC=C1)C.C1(=CC=C(C=C1)C1=NC=CC=C1)C.C1(=CC=C(C=C1)C1=NC=CC=C1)C Chemical compound [Ru].C1(=CC=C(C=C1)C1=NC=CC=C1)C.C1(=CC=C(C=C1)C1=NC=CC=C1)C.C1(=CC=C(C=C1)C1=NC=CC=C1)C HHPNNCLDDZHGIV-UHFFFAOYSA-N 0.000 claims description 2
- JUEHPQHHRLXARE-UHFFFAOYSA-N [Ru].C1(=CC=CC=C1)C1=NC2=CC=CC=C2C(=C1)C.C1(=CC=CC=C1)C1=NC2=CC=CC=C2C(=C1)C.C1(=CC=CC=C1)C1=NC2=CC=CC=C2C(=C1)C Chemical compound [Ru].C1(=CC=CC=C1)C1=NC2=CC=CC=C2C(=C1)C.C1(=CC=CC=C1)C1=NC2=CC=CC=C2C(=C1)C.C1(=CC=CC=C1)C1=NC2=CC=CC=C2C(=C1)C JUEHPQHHRLXARE-UHFFFAOYSA-N 0.000 claims description 2
- BWZNMFIGGHVLSV-UHFFFAOYSA-N [Ru].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 Chemical compound [Ru].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 BWZNMFIGGHVLSV-UHFFFAOYSA-N 0.000 claims description 2
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- WTEWXIOJLNVYBZ-UHFFFAOYSA-N n-[4-[4-(4-ethenyl-n-naphthalen-1-ylanilino)phenyl]phenyl]-n-(4-ethenylphenyl)naphthalen-1-amine Chemical compound C1=CC(C=C)=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC(C=C)=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 WTEWXIOJLNVYBZ-UHFFFAOYSA-N 0.000 claims description 2
- RFYYQFJZJJCJNT-UHFFFAOYSA-N pentane-2,4-dione;ruthenium Chemical compound [Ru].CC(=O)CC(C)=O RFYYQFJZJJCJNT-UHFFFAOYSA-N 0.000 claims description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims 2
- AOJFQRQNPXYVLM-UHFFFAOYSA-N pyridin-1-ium;chloride Chemical compound [Cl-].C1=CC=[NH+]C=C1 AOJFQRQNPXYVLM-UHFFFAOYSA-N 0.000 claims 2
- UZSHGMURFSSXRP-UHFFFAOYSA-N 2-N,2-N,2-N',2-N',7-N,7-N,7-N',7-N'-octakis-phenyl-9,9'-spirobi[fluorene]-2,2',2',7,7',7'-hexamine Chemical compound C1(=CC=CC=C1)N(C1=CC=CC=C1)C1(C=C2C3(C4=CC(C=CC4=C2C=C1)(N)N(C1=CC=CC=C1)C1=CC=CC=C1)C1=CC(=CC=C1C=1C=CC(=CC=13)N(C1=CC=CC=C1)C1=CC=CC=C1)N(C1=CC=CC=C1)C1=CC=CC=C1)N UZSHGMURFSSXRP-UHFFFAOYSA-N 0.000 claims 1
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 claims 1
- VXBQIRSIXXFJLM-UHFFFAOYSA-N [Ru].N1=C(C=CC=C1)C1=NN=NN1.FC1=C(C=CC(=C1)F)C1=NC=CC=C1.FC1=C(C=CC(=C1)F)C1=NC=CC=C1 Chemical compound [Ru].N1=C(C=CC=C1)C1=NN=NN1.FC1=C(C=CC(=C1)F)C1=NC=CC=C1.FC1=C(C=CC(=C1)F)C1=NC=CC=C1 VXBQIRSIXXFJLM-UHFFFAOYSA-N 0.000 claims 1
- ZKIBBIKDPHAFLN-UHFFFAOYSA-N boronium Chemical compound [H][B+]([H])([H])[H] ZKIBBIKDPHAFLN-UHFFFAOYSA-N 0.000 claims 1
- 150000002923 oximes Chemical class 0.000 claims 1
- AKQNYQDSIDKVJZ-UHFFFAOYSA-N triphenylsilane Chemical compound C1=CC=CC=C1[SiH](C=1C=CC=CC=1)C1=CC=CC=C1 AKQNYQDSIDKVJZ-UHFFFAOYSA-N 0.000 claims 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 abstract description 37
- 230000003595 spectral effect Effects 0.000 abstract description 7
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 3
- 150000002910 rare earth metals Chemical class 0.000 abstract description 3
- 239000002800 charge carrier Substances 0.000 abstract 1
- 230000001934 delay Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 268
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical group [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 50
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 20
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000007740 vapor deposition Methods 0.000 description 13
- WIHKEPSYODOQJR-UHFFFAOYSA-N [9-(4-tert-butylphenyl)-6-triphenylsilylcarbazol-3-yl]-triphenylsilane Chemical compound C1=CC(C(C)(C)C)=CC=C1N1C2=CC=C([Si](C=3C=CC=CC=3)(C=3C=CC=CC=3)C=3C=CC=CC=3)C=C2C2=CC([Si](C=3C=CC=CC=3)(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=C21 WIHKEPSYODOQJR-UHFFFAOYSA-N 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 229910016460 CzSi Inorganic materials 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- 238000001465 metallisation Methods 0.000 description 7
- 238000009832 plasma treatment Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 230000005281 excited state Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- MAIALRIWXGBQRP-UHFFFAOYSA-N 9-naphthalen-1-yl-10-naphthalen-2-ylanthracene Chemical compound C12=CC=CC=C2C(C2=CC3=CC=CC=C3C=C2)=C(C=CC=C2)C2=C1C1=CC=CC2=CC=CC=C12 MAIALRIWXGBQRP-UHFFFAOYSA-N 0.000 description 5
- 230000005283 ground state Effects 0.000 description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 5
- 238000004020 luminiscence type Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- CECAIMUJVYQLKA-UHFFFAOYSA-N iridium 1-phenylisoquinoline Chemical compound [Ir].C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 CECAIMUJVYQLKA-UHFFFAOYSA-N 0.000 description 4
- YERGTYJYQCLVDM-UHFFFAOYSA-N iridium(3+);2-(4-methylphenyl)pyridine Chemical compound [Ir+3].C1=CC(C)=CC=C1C1=CC=CC=N1.C1=CC(C)=CC=C1C1=CC=CC=N1.C1=CC(C)=CC=C1C1=CC=CC=N1 YERGTYJYQCLVDM-UHFFFAOYSA-N 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- IWZZBBJTIUYDPZ-DVACKJPTSA-N (z)-4-hydroxypent-3-en-2-one;iridium;2-phenylpyridine Chemical compound [Ir].C\C(O)=C\C(C)=O.[C-]1=CC=CC=C1C1=CC=CC=N1.[C-]1=CC=CC=C1C1=CC=CC=N1 IWZZBBJTIUYDPZ-DVACKJPTSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- QUOALXDTIZDKBU-UHFFFAOYSA-N 1-methyl-3-phenyl-2h-benzimidazole Chemical compound C12=CC=CC=C2N(C)CN1C1=CC=CC=C1 QUOALXDTIZDKBU-UHFFFAOYSA-N 0.000 description 2
- ZDAWFMCVTXSZTC-UHFFFAOYSA-N 2-n',7-n'-dinaphthalen-1-yl-2-n',7-n'-diphenyl-9,9'-spirobi[fluorene]-2',7'-diamine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C(=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C23C4=CC=CC=C4C4=CC=CC=C43)C2=C1 ZDAWFMCVTXSZTC-UHFFFAOYSA-N 0.000 description 2
- YWKKLBATUCJUHI-UHFFFAOYSA-N 4-methyl-n-(4-methylphenyl)-n-phenylaniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(C)=CC=1)C1=CC=CC=C1 YWKKLBATUCJUHI-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- FRASJONUBLZVQX-UHFFFAOYSA-N 1,4-naphthoquinone Chemical compound C1=CC=C2C(=O)C=CC(=O)C2=C1 FRASJONUBLZVQX-UHFFFAOYSA-N 0.000 description 1
- VEXRUVDHAUUTDC-UHFFFAOYSA-N 1-N',1-N'-diphenyl-9,9'-spirobi[fluorene]-1',2',7'-triamine Chemical compound C1(=CC=CC=C1)N(C1=CC=CC=C1)C1=C(C=CC=2C3=CC=C(C=C3C3(C1=2)C1=CC=CC=C1C=1C=CC=CC=13)N)N VEXRUVDHAUUTDC-UHFFFAOYSA-N 0.000 description 1
- MEKMPQZLPWXFTF-UHFFFAOYSA-N 1-methyl-3-phenylimidazolidine Chemical compound C1N(C)CCN1C1=CC=CC=C1 MEKMPQZLPWXFTF-UHFFFAOYSA-N 0.000 description 1
- MQRCTQVBZYBPQE-UHFFFAOYSA-N 189363-47-1 Chemical compound C1=CC=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC=CC=1)C=1C=CC=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 MQRCTQVBZYBPQE-UHFFFAOYSA-N 0.000 description 1
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Substances C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 1
- LQWXEEDCMLEVHU-UHFFFAOYSA-N 2-(2h-tetrazol-5-yl)pyridine Chemical compound N1=CC=CC=C1C1=NNN=N1 LQWXEEDCMLEVHU-UHFFFAOYSA-N 0.000 description 1
- 125000004174 2-benzimidazolyl group Chemical group [H]N1C(*)=NC2=C([H])C([H])=C([H])C([H])=C12 0.000 description 1
- QZTQQBIGSZWRGI-UHFFFAOYSA-N 2-n',7-n'-bis(3-methylphenyl)-2-n',7-n'-diphenyl-9,9'-spirobi[fluorene]-2',7'-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=C3C4(C5=CC=CC=C5C5=CC=CC=C54)C4=CC(=CC=C4C3=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 QZTQQBIGSZWRGI-UHFFFAOYSA-N 0.000 description 1
- PQCAURRJHOJJNQ-UHFFFAOYSA-N 2-n,7-n-dinaphthalen-1-yl-2-n,7-n,9,9-tetraphenylfluorene-2,7-diamine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C(=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C2(C=3C=CC=CC=3)C=3C=CC=CC=3)C2=C1 PQCAURRJHOJJNQ-UHFFFAOYSA-N 0.000 description 1
- BJATUPPYBZHEIO-UHFFFAOYSA-N 3-methyl-2-phenylpyridine Chemical compound CC1=CC=CN=C1C1=CC=CC=C1 BJATUPPYBZHEIO-UHFFFAOYSA-N 0.000 description 1
- 125000003349 3-pyridyl group Chemical group N1=C([H])C([*])=C([H])C([H])=C1[H] 0.000 description 1
- JIVXBMFRLUWGIP-UHFFFAOYSA-N 4-(4-aminophenyl)-3-(4-ethenylphenyl)aniline Chemical compound C(=C)C1=CC=C(C=C1)C1=C(C=CC(=C1)N)C1=CC=C(C=C1)N JIVXBMFRLUWGIP-UHFFFAOYSA-N 0.000 description 1
- YUBXDAMWVRMLOG-UHFFFAOYSA-N 9,9-dimethyl-2-n,7-n-bis(3-methylphenyl)-2-n,7-n-diphenylfluorene-2,7-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=C3C(C)(C)C4=CC(=CC=C4C3=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 YUBXDAMWVRMLOG-UHFFFAOYSA-N 0.000 description 1
- KJEQVQJWXVHKGT-UHFFFAOYSA-N 9,9-dimethyl-2-n,7-n-dinaphthalen-1-yl-2-n,7-n-diphenylfluorene-2,7-diamine Chemical compound C1=C2C(C)(C)C3=CC(N(C=4C=CC=CC=4)C=4C5=CC=CC=C5C=CC=4)=CC=C3C2=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=CC=C1 KJEQVQJWXVHKGT-UHFFFAOYSA-N 0.000 description 1
- DVNOWTJCOPZGQA-UHFFFAOYSA-N 9-[3,5-di(carbazol-9-yl)phenyl]carbazole Chemical compound C12=CC=CC=C2C2=CC=CC=C2N1C1=CC(N2C3=CC=CC=C3C3=CC=CC=C32)=CC(N2C3=CC=CC=C3C3=CC=CC=C32)=C1 DVNOWTJCOPZGQA-UHFFFAOYSA-N 0.000 description 1
- VIJYEGDOKCKUOL-UHFFFAOYSA-N 9-phenylcarbazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 VIJYEGDOKCKUOL-UHFFFAOYSA-N 0.000 description 1
- NEKVEYIDGCSSOC-UHFFFAOYSA-N 9H-carbazole furan Chemical compound C1=CC=CC=2C3=CC=CC=C3NC12.O1C=CC=C1 NEKVEYIDGCSSOC-UHFFFAOYSA-N 0.000 description 1
- ZYLPWXQXTQOMNZ-UHFFFAOYSA-N C1(=CC=CC=C1)NC1=CC=2C(C3=CC(=CC=C3CC2C=C1)NC1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 Chemical compound C1(=CC=CC=C1)NC1=CC=2C(C3=CC(=CC=C3CC2C=C1)NC1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1 ZYLPWXQXTQOMNZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N Cc1cccc(N(c2ccccc2)c(cc2)ccc2-c(cc2)ccc2N(c2ccccc2)c2cc(C)ccc2)c1 Chemical compound Cc1cccc(N(c2ccccc2)c(cc2)ccc2-c(cc2)ccc2N(c2ccccc2)c2cc(C)ccc2)c1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- GJNGTALCSUHZRC-UHFFFAOYSA-N [Ir].C1(=CC=CC=C1)C1=NC2=CC=CC=C2C(=C1)C.C1(=CC=CC=C1)C1=NC2=CC=CC=C2C(=C1)C.C1(=CC=CC=C1)C1=NC2=CC=CC=C2C(=C1)C Chemical compound [Ir].C1(=CC=CC=C1)C1=NC2=CC=CC=C2C(=C1)C.C1(=CC=CC=C1)C1=NC2=CC=CC=C2C(=C1)C.C1(=CC=CC=C1)C1=NC2=CC=CC=C2C(=C1)C GJNGTALCSUHZRC-UHFFFAOYSA-N 0.000 description 1
- WKBXQPMBAKFJGB-UHFFFAOYSA-N [Ru].CC(C)C(CC(C(C)(C)C)=O)=O Chemical compound [Ru].CC(C)C(CC(C(C)(C)C)=O)=O WKBXQPMBAKFJGB-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- OWMVSZAMULFTJU-UHFFFAOYSA-N bis-tris Chemical compound OCCN(CCO)C(CO)(CO)CO OWMVSZAMULFTJU-UHFFFAOYSA-N 0.000 description 1
- BEJRNLMOMBGWFU-UHFFFAOYSA-N bismuth boron Chemical compound [B].[Bi] BEJRNLMOMBGWFU-UHFFFAOYSA-N 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- DKHNGUNXLDCATP-UHFFFAOYSA-N dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile Chemical compound C12=NC(C#N)=C(C#N)N=C2C2=NC(C#N)=C(C#N)N=C2C2=C1N=C(C#N)C(C#N)=N2 DKHNGUNXLDCATP-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- IVPZJRKMZLRFIL-UHFFFAOYSA-N iridium;pyridine Chemical compound [Ir].C1=CC=NC=C1 IVPZJRKMZLRFIL-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- DDLIGBOFAVUZHB-UHFFFAOYSA-N midazolam Chemical compound C12=CC(Cl)=CC=C2N2C(C)=NC=C2CN=C1C1=CC=CC=C1F DDLIGBOFAVUZHB-UHFFFAOYSA-N 0.000 description 1
- 229960003793 midazolam Drugs 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical group O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- BLFVVZKSHYCRDR-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-2-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-2-amine Chemical compound C1=CC=CC=C1N(C=1C=C2C=CC=CC2=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C3C=CC=CC3=CC=2)C=C1 BLFVVZKSHYCRDR-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- BAQLNPIEFOYKNB-UHFFFAOYSA-N pyridine-2-carbohydrazide Chemical compound NNC(=O)C1=CC=CC=N1 BAQLNPIEFOYKNB-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- IEVOGRKARBAFJY-UHFFFAOYSA-N ruthenium 2-[5-(trifluoromethyl)-1H-pyrazol-3-yl]pyridine Chemical compound [Ru].FC(C=1C=C(NN1)C1=NC=CC=C1)(F)F IEVOGRKARBAFJY-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
- H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/351—Metal complexes comprising lanthanides or actinides, e.g. comprising europium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/10—Non-macromolecular compounds
- C09K2211/1018—Heterocyclic compounds
- C09K2211/1025—Heterocyclic compounds characterised by ligands
- C09K2211/1029—Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/18—Metal complexes
- C09K2211/182—Metal complexes of the rare earth metals, i.e. Sc, Y or lanthanide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/10—Triplet emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
- H10K50/181—Electron blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition
Definitions
- the invention relates to the field of organic electroluminescence technology, in particular to a white organic electroluminescent device and a preparation method thereof.
- An organic electroluminescent device is a self-luminous device whose principle of illumination is that when an electric charge is injected into an organic layer between a hole injecting electrode and an electron injecting electrode, electrons and holes meet, combine, and then annihilate, thereby generating Light.
- Organic electroluminescent devices have characteristics such as low voltage, high brightness, and wide viewing angle, and thus organic electroluminescent devices have been rapidly developed in recent years. Among them, white organic electroluminescent devices have become a research hotspot because of their broad application prospects in display and illumination.
- the trivalent europium complex has been regarded as an ideal organic electroluminescent material by academics and industry because of its high luminous efficiency and adjustable color of light.
- Many research teams at home and abroad have started from material synthesis and device optimization to improve the comprehensive performance of white organic electroluminescent devices to meet the needs of industrialization.
- Forrest et al. of Princeton University in the United States designed a white organic electroluminescent device having a multi-luminescent layer structure by doping blue light material, green light material and red light material into different light emitting layers, respectively.
- the device exhibits an ideal white light emission, unbalanced carrier injection results in lower efficiency and brightness of the device and higher operating voltage.
- complex device structures also result in higher device fabrication costs.
- Kido et al. of Yamagata University of Japan successfully obtained a white light emitting device by combining a blue-green light and an orange-red light by designing a dual light-emitting layer device structure.
- the device has high luminous efficiency, however, the characteristics of bimodal emission cause the spectrum of the device to be insufficiently covered in the white light region, so the color recovery coefficient is low.
- the luminance of the light is increased, the emission spectrum of the device greatly changes. It can be seen that the luminous efficiency of the white organic electroluminescent device, The overall performance of brightness, spectral stability and working life has not been effectively improved.
- the technical problem solved by the present invention is to provide a white organic electroluminescent device with high comprehensive performance and a preparation method thereof.
- a white organic electroluminescent device comprising:
- the electron-dominated light-emitting layer is composed of an organic sensitizing material, a blue organic light-emitting material and an electronic organic organic material;
- the hole-priming light-emitting layer is composed of a green organic light-emitting material, a red organic light-emitting material, and a hole-type organic host material;
- the organic sensitizing material is selected from one or two of tris(acetylacetonate) phenanthroline ruthenium and tris(acetylacetonate) phenanthroline ruthenium;
- the organic sensitizing material is from 0.1% by weight to 0.5% by weight of the electronic type organic host material.
- the content of the blue organic light-emitting material is 8.0% by weight to 25.0% by weight of the electronic organic organic host material.
- the blue organic light-emitting material is selected from the group consisting of bis(3,5-difluoro-4-cyano)pyridine hydrazide, bis(2,4-difluorophenylpyridine)tetrakis(1-pyrazolyl) Boron bismuth, tris(1-phenyl-3-methylbenzoimidazolin-2-yl-C, C2') hydrazine, tris(1-phenyl-3-methylbenzimidazole) Oxazolin-2-yl-C, C2') ruthenium, bis(2,4-difluorophenylpyridine)(5-(pyridin-2-yl)-1H-tetrazole) ruthenium, three [(2 ,6-diisopropylphenyl)2-phenyl-1H-imidazole [e] hydrazine, tris(1-phenyl-3-methylimidazolin-2-yl-C,
- the electronic organic host material is selected from the group consisting of 2,6-bis[3-(9H-9-carbazolyl)phenyl]pyridine, 1,4-bis(triphenylsilyl)benzene, 2, 2'-bis(4-(9-carbazolyl)phenyl)biphenyl, [2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane, 1,3,5 -Tris[(3-pyridyl)-3-phenyl]benzene, 1,3-bis[3,5-bis(3-pyridyl)phenyl]benzene, 1,3,5-tris(1-phenyl -1H-benzimidazol-2-yl)benzene, 9-(4-t-butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole and 9-(8-diphenyl) One or more of p-phosphoryl)-diazo
- the red organic light emitting material is 1.0 wt% to 3.0 wt% of the hole type organic host material; and the green organic light emitting material is 5.0 wt% to 10.0 wt% of the hole type organic host material. ;
- the green organic light-emitting material is selected from the group consisting of tris(2-phenylpyridine) ruthenium, bis(2-phenylpyridine)(acetylacetonate) ruthenium, and tris[2-(p-methylphenyl)pyridine] ruthenium. , bis(2-phenylpyridine)[2-(diphenyl-3-yl)pyridine] ruthenium, tris(2-(3-p-dimethylphenyl)pyridine ruthenium and tris(2-phenyl-) One or more of 3-methyl-pyridine);
- the red organic light-emitting material is selected from the group consisting of bis(2-phenylquinoline)-(2,2,6,6-tetramethyl-3,5-heptanedionate) ruthenium, bis(2-benzoazole [ b] 2-thienylpyridine) acetylacetonate ruthenium, tris(1-phenylisoquinoline) ruthenium, bis(1-phenylisoquinoline)(acetylacetonate) ruthenium, two [1-(9, 9-Dimethyl-9H-indol-2-yl)-isoquinoline](acetylacetone) ruthenium, bis[2-(9,9-dimethyl-9H-indol-2-yl)quinoline] (acetylacetone) ruthenium, bis(2-phenylquinoline)(2-(3-methylphenyl)pyridine) ruthenium, tris[2-phenyl-4-methylquinoline] ruthenium
- the hole-type organic host material is selected from the group consisting of 4,4'-N, N'-dicarbazole diphenyl, 1,3-dioxazole-9-ylbenzene, 9,9'-(5-(three Phenylsilyl)-1,3-phenyl)di-9H-carbazole, 1,3,5-tris(9-oxazolyl)benzene, 4,4',4"-tris(carbazole-9 One or more of triphenylamine and 1,4-bis(triphenylsilyl)biphenyl.
- the material of the hole transporting-electron blocking layer is selected from the group consisting of 4,4'-cyclohexyl bis[N,N-bis(4-methylphenyl)aniline], dipyrazine [2,3-f :2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile, N4,N4'-di(naphthalen-1-yl)-N4,N4'-double ( 4-vinylphenyl)biphenyl-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-2,7-diamine -9,9-spirobiguanide, N,N,N',N'-tetrakis(3-methylphenyl)-3-3'-dimethyl-p-diaminobiphenyl, 2,2'-di (3-(N,N-di-p-tolylamino)pheny
- the material of the hole blocking-electron transport layer is selected from the group consisting of tris[2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane, 1,3,5-tri [ (3-pyridine)-3-phenyl]benzene, 1,3-bis[3,5-bis(3-pyridyl)phenyl]benzene and 1,3,5-tris(1-phenyl-1H- One or more of benzimidazol-2-yl)benzene.
- the anode modification layer has a thickness of 1 to 10 nm
- the hole transport-electron barrier layer has a thickness of 30 to 60 nm
- the hole-dominant light-emitting layer has a thickness of 5 to 20 nm.
- the thickness of the layer is 5 to 20 nm
- the thickness of the hole blocking-electron transport layer is 30 to 60 nm
- the thickness of the cathode modification layer is 0.8 to 1.2 nm
- the thickness of the cathode layer is 90 to 300 nm.
- the application also provides a method for preparing a white organic electroluminescent device, comprising:
- the anode layer on the substrate is etched, and after drying, the anode modification layer, the hole transport-electron barrier layer, the hole-dominant light-emitting layer, the electron-dominated light-emitting layer, and the hole blocking are sequentially deposited on the anode layer.
- the material of the electron-dominated light-emitting layer is composed of an organic sensitizing material, a blue organic light-emitting material and an electronic type organic host material;
- the organic sensitizing material is selected from one or two of tris(acetylacetonate) phenanthroline ruthenium and tris(acetylacetonate) phenanthroline ruthenium;
- the organic sensitizing material is from 0.1% by weight to 0.5% by weight of the electronic type organic host material.
- the evaporation rate of the anode modification layer is 0.01-0.05 nm/s, and the host material in the hole transport-electron blocking layer, the hole-dominant light-emitting layer, the electron-dominated light-emitting layer and the hole blocking-electron transport layer
- the evaporation rate of the organic sensitizing material in the electron-dominated luminescent layer is 0.00005-0.0005 nm/s, and the evaporation rate of the blue organic luminescent material in the electron-dominated luminescent layer is 0.004 ⁇ 0.025nm/s;
- the evaporation rate of the red luminescent material in the hole-preferred luminescent layer is 0.0005-0.003 nm/s;
- the evaporation rate of the green organic luminescent material in the hole-preferred luminescent layer is 0.0025-0.01
- the evaporation rate of the cathode modification layer is 0.005 to 0.05 nm/s, and the evaporation rate of the ca
- the present application provides a white organic electroluminescent device comprising a substrate, an anode layer, an anode modification layer, a hole transport-electron barrier layer, a hole-dominant light-emitting layer, an electron-dominated light-emitting layer, hole blocking-electron transport Layer, cathode modification layer and cathode layer.
- the luminescent materials of the present application are blue luminescent materials, green luminescent materials and red luminescent materials.
- the luminescent layer of the organic electroluminescent device contains red.
- the green, blue and blue primary luminescent materials when the doping concentration of the three color luminescent materials is effectively matched, the photon ratio of the three colors will reach an equilibrium distribution close to the sunlight, thus generating white light emission.
- the present application adds tris(acetylacetonate) phenanthroline and ruthenium to an electron-dominated luminescent layer.
- One or two of tris(acetylacetonate)-phenanthroline ruthenium as an organic sensitizing material because of its energy level and triplet energy, energy level of electronic host material, blue luminescent material and triplet energy phase Matching, the organic sensitizing material acts as a carrier deep-binding center and energy transfer step in the electroluminescence process, which not only can improve the energy transfer from the host material to the luminescent material, but also balance the electrons and holes in the luminescence.
- the distribution of the interval thereby improving the luminous efficiency of the organic electroluminescent device, improving the spectral stability of the device, reducing the operating voltage of the device, delaying the efficiency degradation of the device, and improving the working life of the device.
- FIG. 1 is a schematic structural view of a white organic electroluminescent device of the present invention.
- Example 2 is a graph showing voltage-current density-luminance characteristics of a white organic electroluminescent device prepared in Example 1 of the present invention
- Example 3 is a graph showing current density-power efficiency-current efficiency characteristics of a white organic electroluminescent device prepared in Example 1 of the present invention
- Example 4 is a spectrum diagram of a white organic electroluminescent device prepared in Example 1 of the present invention at a luminance of 20,000 cd/m 2 .
- the embodiment of the invention discloses a white organic electroluminescent device, comprising:
- the electron-dominated light-emitting layer is composed of an organic sensitizing material, a blue organic light-emitting material and an electronic organic organic material;
- the organic sensitizing material is selected from one or two of tris(acetylacetonate) phenanthroline ruthenium and tris(acetylacetonate) phenanthroline ruthenium;
- the organic sensitizing material is from 0.1% by weight to 0.5% by weight of the electronic type organic host material.
- OLED organic electroluminescent device
- the luminescent material molecules excite an electron to an excited state, and the excited state electrons return to the ground state by a transition to generate a photon, since the luminescent layer contains red, green, and blue primaries, when three colors
- the photon ratio of the three colors will reach an equilibrium concentration close to the sunlight, and thus a white light emission is generated.
- the white organic electroluminescent device of the present application comprises a substrate, an anode layer, an anode modification layer, a hole transport-electron blocking layer, a hole-dominant light-emitting layer, an electron-dominated light-emitting layer, a hole blocking-electron transport layer, and a cathode modification.
- the layer and the cathode layer are sequentially connected to each other.
- the hole-bearing light-emitting layer and the electron-based light-emitting layer are light-emitting layers of a white organic electron-emitting device.
- the electronically dominant light-emitting layer of the present invention is composed of an organic sensitizing material, a blue organic light-emitting material and an electronic type organic host material, wherein the organic sensitizing material plays a sensitizing role in the electroluminescence process to balance electrons and holes.
- the distribution in the illumination interval increases the energy transfer from the host material to the luminescent material; the molecules of the blue organic luminescent material are dispersed in the electron-dominated luminescent layer as the luminescent center; the electronic organic host material acts as a matrix to provide electron transport capability .
- the energy level and the triplet energy of the organic sensitizing material need to match the energy level of the host material, the luminescent material, and the triplet energy to balance the distribution of electrons and holes in the light-emitting interval and accelerate
- the energy transfer from the host material to the luminescent material gives the white organic electroluminescent device a better overall performance. Therefore, the present application selects an energy level-matched rare earth complex selected from a tris(acetylacetonate) phenanthrene having a structure of the formula (IX) by selecting an illuminating material.
- the doping concentration of the organic sensitizing material in the electron-based light-emitting layer of the present invention affects the performance of the organic electroluminescent device. If the doping concentration of the organic sensitizing material is too low, the sensitizing effect is unsatisfactory, and if the doping concentration is too high, the overall performance of the luminescence of the organic electroluminescent device is lowered. Therefore, the organic sensitizing material is from 0.1% by weight to 0.5% by weight, preferably from 0.2% by weight to 0.3% by weight, of the electronic type organic host material.
- the present application includes three primary color organic light-emitting materials in the electron-dominated light-emitting layer and the hole-based light-emitting layer, respectively, thereby enabling the organic electroluminescent device to emit white light.
- the organic light-emitting material in the electron-based light-emitting layer is a blue organic light-emitting material
- the blue organic light-emitting material is a light-emitting material well known to those skilled in the art, and the present application is not particularly limited, but in order to make the light-emitting effect better, the blue organic light emitting material is preferably selected having the formula (ii 1) bis (3,5-difluoro-4-cyano) pyridine hydrochloride laminated structure iridium (FCNIrpic), having the formula (ii 2) the structure of bis ( 2,4-difluorophenylpyridine)tetrakis(1-pyrazolyl)borane ruthenium (Fir6), face-tris(3-phen
- the doping concentration of the blue organic light-emitting material also affects the overall performance of the white organic electroluminescent device. If the doping concentration of the blue organic light-emitting material is too low, the device efficiency is low and the spectral stability is not ideal. If the doping concentration is too high, the luminescent material molecules are agglomerated to form a quenching center, and finally the device is lowered. Comprehensive performance.
- the doping concentration of the blue organic light-emitting material in the electron-dominated light-emitting layer is preferably 8.0 wt% to 25.0 wt%, more preferably 10.0 wt% to 20.0 wt%, and most preferably 15.0 wt% to 18.0 wt%. %.
- the electronic type host material functions as a matrix in the electron-dominated light-emitting layer to provide electron transport capability, and the electronic type host material is a material well known to those skilled in the art.
- the electronic type host material is preferably selected from the group consisting of 2,6-bis[3-(9H-9-carbazolyl)phenyl]pyridine (26DCzPPy) having the structure of the formula (XI), having the structure of the formula (XII) 1,4-bis(triphenylsilyl)benzene (UGH2), 2,2'-bis(4-(9-carbazolyl)phenyl)biphenyl (BCBP) having the structure of formula (XIII), [2,4,6-Trimethyl-3-(3-pyridyl)phenyl]borane (3TPYMB) having the structure of formula (XIV), 1,3,5-tri” having the structure of formula (XV) [ (3-pyridyl)-3-phenyl]benzene (TmPyPB), 1,3-bis[3,5-di(3-pyridyl)phenyl]benzene (BmPyPhB) having the structure of formula (XVI), having the group consist
- the material of the hole-preferred light-emitting layer in the present application is a red organic light-emitting material, a green organic light-emitting material and a hole-type organic host material, wherein molecules of the green organic light-emitting material and the red organic light-emitting material are dispersed in the hole-dominant light-emitting layer.
- a luminescent center As a luminescent center.
- the organic light-emitting material in the present application includes a red organic light-emitting material, a green organic light-emitting material, and a blue organic light-emitting material; the organic light-emitting material in the electron-based light-emitting layer of the present application is a blue organic light-emitting material, and the holes are dominant in the light-emitting layer.
- the luminescent material is a red organic luminescent material and a green organic luminescent material, the arrangement of the different color luminescent materials can improve the color recovery coefficient of the device and effectively ensure the spectral stability of the device;
- the red organic luminescent material is preferably the hole 1.0% by weight to 3.0% by weight of the organic organic material
- the green organic light emitting material is preferably 5.0% by weight to 10.0% by weight of the hole type organic host material;
- the doping concentration of the organic light emitting material is too low, This will result in low device efficiency and unsatisfactory spectral stability. If the doping concentration is too high, the luminescent material molecules will agglomerate, forming a quenching center, and ultimately reducing the overall performance of the device.
- the hole-type host material functions as a matrix to provide hole transporting ability.
- the green organic light-emitting material in the hole-priming light-emitting layer described in the present application is preferably selected from tris(2-phenylpyridine)ruthenium (Ir(ppy) 3 ) having a structure of the formula (II 17 ), having the formula (II) 18 ) Structure of bis(2-phenylpyridine)(acetylacetonate) ruthenium (Ir(ppy) 2 (acac)), tris[2-(p-methylphenyl)pyridine having the structure of formula (II 19 ) ⁇ (Ir(mppy) 3 ), bis(2-phenylpyridine)[2-(diphenyl-3-yl)pyridine] ruthenium (Ir(ppy) 2 (with structure of formula (II 20 )) m-bppy)), having the formula (tris (2- (3-dimethylbenz structure ii 21)) pyridine iridium (TEG
- the red organic light-emitting material is preferably selected from the group consisting of bis(2-phenylquinoline)-(2,2,6,6-tetramethyl-3,5-heptanedionate) having the structure of the formula (II 23 ) Bismuth (PQ 2 Ir(dpm)), bis(2-oxazo[b]2-thienylpyridine) acetylacetonate ruthenium (Ir(btp) 2 (acac)) having the formula (II 24 ), having the formula (II 25 ) Structure of tris(1-phenylisoquinoline) ruthenium (Ir(piq) 3 ), bis(1-phenylisoquinoline) (acetylacetonate) ruthenium having the structure of formula (II 26 ) (Ir(piq) 2 (acac)), bis[1-(9,9-dimethyl-9H-indol-2-yl)-isoquinoline] (acety
- the hole-type organic host material is preferably selected from the group consisting of 4,4'-N,N'-dicarbazole diphenyl (CBP) having the structure of formula (III), and 1,3-two having the structure of formula (IV) Carbazole-9-ylbenzene (mCP), 9,9'-(5-(triphenylsilyl)-1,3-phenyl)di-9H-carbazole (SimCP) having the structure of formula (V) 1,3,5-tris(9-carbazolyl)benzene (TCP) having the structure of formula (VI), 4,4',4"-tris(carbazole-9-yl) having the structure of formula (VII) And one or more of triphenylamine (TcTa) and 1,4-bis(triphenylsilyl)biphenyl (BSB) having the structure of formula (VIII);
- CBP 4,4'-N,N'-dicarbazole diphenyl
- mCP Carbazo
- the substrate may be a glass substrate, a quartz substrate, a polycrystalline silicon substrate, a single crystal silicon substrate or a graphene film substrate, which is not particularly limited in the present application.
- the anode layer is preferably selected from indium tin oxide (ITO), and its surface resistance is preferably 5 to 25 ⁇ .
- ITO indium tin oxide
- the anode modification layer can lower the driving voltage and accelerate the injection of holes, and the anode modification layer is preferably molybdenum oxide (MoO 3 ).
- the hole transport-electron blocking layer described in this application functions to transport holes and block electrons.
- the material of the hole transport-electron blocking layer is preferably selected from 4,4'-cyclohexyl bis[N,N-bis(4-methylphenyl)aniline] (TAPC) having the structure of the formula (I 1 ), Dipyrazine [2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) having the structure of formula (I 2 ) N4,N4'-bis(naphthalen-1-yl)-N4,N4'-bis(4-vinylphenyl)biphenyl-4,4'-diamine (VNPB) having the structure of formula (I 3 ) N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-2,7-diamine-9,9-spirobifluorene having the structure of formula (I 4
- the hole blocking-electron transporting layer functions to transport electrons and block holes to promote electron injection.
- the material of the hole blocking-electron transport layer is preferably selected from tris[2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane (3TPYMB) having the structure of the formula (XIV), 1,3,5-tris[(3-pyridyl)-3-phenyl]benzene (TmPyMB) having the structure (XV), 1,3-bis[3,5-di ((3,5-di) having the structure of formula (XVI) 3-pyridyl)phenyl]benzene (BmPyPhB) and one of 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi) having the structure of formula (XVII) Species or more;
- the function of the cathode modification layer described in the present application is to lower the driving voltage and accelerate the injection of electrons, and the cathode modification layer is preferably lithium fluoride.
- the cathode layer is preferably aluminum.
- the present application relates to a material of the hole transport-electron blocking layer, a blue organic light emitting material, a red organic light emitting material, a yellow organic light emitting material, a hole type organic host material, an organic sensitizing material, an electronic type organic host material, and an empty
- the source of the material of the hole blocking-electron transport layer is not particularly limited and can be obtained by a method well known to those skilled in the art.
- the anode layer and the cathode layer intersect each other to form a light-emitting region of the device.
- the thickness of each layer in the white organic electroluminescent device of the present application has a great influence on the device, if the thickness is low. This will result in faster device efficiency degradation. If the thickness is higher, the device will operate at a higher voltage and have a lower lifetime.
- the thickness of the anode modification layer is preferably from 1 to 10 nm
- the thickness of the hole transport-electron barrier layer is preferably from 30 to 60 nm
- the thickness of the hole-preferred light-emitting layer is preferably from 5 to 20 nm
- the thickness of the electron-dominated light-emitting layer is preferably 5 to 20 nm
- the thickness of the hole blocking-electron transport layer is preferably 30 to 60 nm
- the thickness of the cathode modified layer is preferably 0.8 to 1.2 nm
- the thickness of the cathode layer is preferably 90 to 300 nm.
- the present application also provides a method for preparing the white organic electroluminescent device, comprising:
- the anode layer on the substrate is etched, and after drying, the anode modification layer, the hole transport-electron barrier layer, the hole-dominant light-emitting layer, the electron-dominated light-emitting layer, and the hole blocking are sequentially deposited on the anode layer.
- the electron-dominated light-emitting layer is formed by mixing an organic sensitizing material, a blue organic light-emitting material and an electronic organic organic material;
- the hole-dominant light-emitting layer is a mixture of a green organic light-emitting material, a red organic light-emitting material and a hole-type organic host material;
- the organic sensitizing material is selected from one or two of tris(acetylacetonate) phenanthroline ruthenium and tris(acetylacetonate) phenanthroline ruthenium;
- the organic sensitizing material is from 0.1% by weight to 0.5% by weight of the electronic type organic host material.
- the preparation method of the white organic electroluminescent device is specifically as follows:
- the anode layer on the substrate is laser etched into strip electrodes, and then ultrasonically washed with washing liquid and deionized water for 10-20 min and placed in an oven for drying;
- the dried substrate is placed in a pretreatment vacuum chamber, and subjected to a low pressure plasma treatment for 1 to 10 minutes under a vacuum of 8 to 15 Pa in an atmosphere of 350 to 500 V, and then transferred to an organic vapor deposition chamber;
- the anode modification layer, the hole transport-electron barrier layer, the hole-dominant light-emitting layer, the electron-dominated light-emitting layer, and the hole blocking-electron transport are sequentially deposited on the anode layer.
- the unfinished device was transferred to a metal deposition chamber, and the cathode modified layer and the metal cathode layer were sequentially evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa.
- the present application achieves deposition of materials by controlling the evaporation rate.
- the evaporation rate of the anode modification layer is controlled at 0.01 to 0.05 nm/s, and the evaporation rate control of the host material in the hole transport-electron blocking layer, the hole-dominant light-emitting layer, the electron-dominated light-emitting layer, and the empty electron transport layer is controlled.
- the evaporation rate of the organic sensitizing material is controlled at 0.00005-0.0005 nm/s
- the evaporation rate of the green organic luminescent material is controlled at 0.0025-0.01 nm/s.
- the evaporation rate of the blue organic luminescent material is controlled at 0.004 ⁇ 0.025nm/s
- the evaporation rate of red organic luminescent material is controlled at 0.0005 ⁇ 0.003nm/s
- the evaporation rate of cathode modified layer is controlled at 0.005 ⁇ 0.05nm/s
- the evaporation rate of metal cathode layer is controlled at 0.5 ⁇ 2.0nm/ s.
- the vapor-deposited hole dominates the light-emitting layer, wherein the red organic light-emitting material, the green organic light-emitting material, and the hole-type organic host material are simultaneously evaporated in different evaporation sources, and the reddish color is adjusted by adjusting the evaporation rate of the three materials.
- the weight ratio of the organic light-emitting material and the hole-type organic host material is controlled to be between 1.0% and 3.0%, and the weight ratio of the green organic light-emitting material and the hole-type organic host material is controlled to be between 5.0% and 10.0%;
- the organic sensitizing material, the blue organic light-emitting material, and the electronic organic organic material are simultaneously evaporated in different evaporation sources, and the doped organic sensitizing material and the electronic type are controlled by regulating the evaporation rates of the three materials.
- the mass ratio of the organic host material is controlled to be between 0.1% and 0.5%, so that the mass ratio of the doped blue organic light-emitting material and the electronic type organic host material is controlled to be between 8.0% and 25.0%.
- the present application provides a white organic electroluminescent device in which a rare earth complex having a matching energy level distribution, such as Tm(acac) 3 or Dy (acac), is selected among electron-dominated light-emitting layers in the white organic electroluminescent device.
- 3 phen as an organic sensitizing material, which plays the role of electron deep-binding center, which is beneficial to balance the distribution of carriers and broaden the light-emitting interval of the device, thereby improving the luminous efficiency of the device, reducing the operating voltage of the device, and delaying the device.
- the organic sensitizing material has matched triplet energy, functions as an energy transfer step, accelerates energy transfer from the host material to the luminescent material, and relieves luminescent material carriers
- the problem of luminescence of the host material caused by insufficient capture capability, thereby improving the spectral stability of the device and reducing the dependence of device performance on the doping concentration of the luminescent material.
- the white organic electroluminescent device and the preparation method thereof provided by the present invention are described in detail below with reference to the embodiments, and the scope of the present invention is not limited by the following examples.
- FIG. 1 is a schematic structural view of a white organic electroluminescent device according to the present invention, wherein 1 is a glass substrate, 2 is an anode layer, 3 is an anode modification layer, and 4 is a hole transport-electron blocking layer, 5 The hole is the luminescent layer, 6 is the electron-dominated luminescent layer, 7 is the hole blocking-electron transport layer, 8 is the cathode modified layer, and 9 is the metal cathode layer.
- the ITO anode layer on the ITO glass was first laser etched into strip electrodes, which were then ultrasonically cleaned with cleaning solution and deionized water for 15 min and placed in an oven for drying. Next, the dried substrate was placed in a pretreatment vacuum chamber, and the ITO anode was subjected to low pressure plasma treatment for 3 minutes under a vacuum of 10 Pa in an atmosphere of 400 V, and then transferred to an organic vapor deposition chamber. In an organic vapor deposition chamber having a degree of vacuum of 1 to 2 ⁇ 10 -5 Pa, a 3 nm-thick MoO 3 anode modification layer 3 and a 40 nm-thick TAPC hole-transport-electron barrier layer 4, 10 nm are sequentially deposited on the ITO layer.
- Thick PQ2Ir(dpm) and Ir(ppy) 3 doped TcTa hole-dominated luminescent layer 5 10 nm thick Tm(acac) 3 phen and FCNIrpic co-doped CzSi electron-dominated luminescent layer 6 and 40 nm thick TmPyPB hole blocking - Electron transport layer 7.
- the unfinished device was transferred to a metal deposition chamber, and a 1.0 nm thick LiF cathode modification layer 8 was evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa, and finally passed through a special mask on the LiF layer.
- a 120 nm thick metal Al cathode layer 9 was deposited to prepare a structure of ITO/MoO 3 /TAPC/PQ2Ir(dpm) (2.6%): Ir(ppy) 3 (7%) TcTa/Tm(acac) 3 phen (0.2 %): FCNIrpic (18%): an organic electroluminescent device of CzSi/TmPyPB/LiF/Al.
- the evaporation rate of MoO 3 in the anode modification layer 3 is controlled at 0.01 nm/s
- the evaporation rate of TAPC in the hole transport-electron blocking layer 4 is controlled at 0.05 nm/s
- Ir The evaporation rates of (ppy) 3 and TcTa are controlled at 0.0013 nm/s, 0.0035 nm/s and 0.05 nm/s, respectively.
- the evaporation rates of Tm(acac) 3 phen, FCNIrpic and CzSi in the electron-dominated luminescent layer 6 are controlled at 0.0001, respectively.
- the evaporation rate of TmPyPB in the hole blocking-electron transport layer 7 is controlled at 0.05 nm/s
- the evaporation rate of LiF in the cathode modified layer 8 is controlled at 0.01 nm/s.
- the evaporation rate of Al in the metal cathode layer 9 was controlled at 1.0 nm/s.
- FIG. 2 is a voltage-current density-luminance characteristic curve of the white organic electroluminescent device prepared in the present embodiment.
- the ⁇ curve is the current density-voltage curve of the device
- the ⁇ curve is the brightness of the device.
- - voltage curve according to Figure 2, the brightness of the device increases with the increase of current density and driving voltage, the device's starting voltage is 3.0 volts, the voltage is 9.4 volts, and the current density is 484.56 mA per square centimeter. At (mA/cm 2 ) the device achieved a maximum brightness of 44,899 candelas per square meter (cd/m 2 ).
- FIG. 3 is a current density-power efficiency-current efficiency characteristic curve of the white organic electroluminescent device prepared in the present embodiment.
- the maximum current efficiency of the device is 61.32 cd/A, and the maximum power is obtained.
- the efficiency is 64.18 lm / W.
- FIG. 4 is a spectrum diagram of a white organic electroluminescent device provided by the present invention at a luminance of 20,000 cd/m 2 .
- the main peaks of the spectrum are located at 462 nm, 515 nm, and 595 nm.
- the color coordinates of the device are (0.331, 0.332).
- the ITO anode layer on the ITO glass was first laser etched into strip electrodes, which were then ultrasonically cleaned with cleaning solution and deionized water for 15 min and placed in an oven for drying. Next, the dried substrate was placed in a pretreatment vacuum chamber, and the ITO anode was subjected to low pressure plasma treatment for 3 minutes under a vacuum of 10 Pa in an atmosphere of 400 V, and then transferred to an organic vapor deposition chamber. In an organic vapor deposition chamber having a degree of vacuum of 1 to 2 ⁇ 10 -5 Pa, a 3 nm-thick MoO 3 anode modification layer 3 and a 40 nm-thick TAPC hole-transport-electron barrier layer 4, 10 nm are sequentially deposited on the ITO layer.
- Thick PQ2Ir(dpm) and Ir(ppy) 3 doped mCP hole-dominated luminescent layer 5 10nm thick Tm(acac) 3 phen and FCNIrpic co-doped CzSi electron-dominated luminescent layer 6 and 40nm thick TmPyPB hole blocking - Electron transport layer 7.
- the unfinished device was transferred to a metal deposition chamber, and a 1.0 nm thick LiF cathode modification layer 8 was evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa, and finally passed through a special mask on the LiF layer.
- a 120 nm thick metal Al cathode layer 9 was deposited to prepare a structure of ITO/MoO 3 /TAPC/PQ2Ir(dpm) (2.4%) Ir(ppy) 3 (6%): mCP/Tm(acac) 3 phen (0.2 %): FCNIrpic (18%): an organic electroluminescent device of CzSi/TmPyPB/LiF/Al.
- the evaporation rate of MoO 3 in the anode modification layer 3 is controlled at 0.01 nm/s
- the evaporation rate of TAPC in the hole transport-electron blocking layer 4 is controlled at 0.05 nm/s
- the evaporation rates of 3 and mCP are controlled at 0.0012 nm/s, 0.003 nm/s and 0.05 nm/s, respectively.
- the evaporation rates of Tm(acac) 3 phen, FCNIrpic and CzSi in the electron-dominated luminescent layer 6 are controlled at 0.0001, respectively.
- the evaporation rate of TmPyPB in the hole blocking-electron transport layer 7 is controlled at 0.05 nm/s
- the evaporation rate of LiF in the cathode modified layer 8 is controlled at 0.01 nm/s.
- the evaporation rate of Al in the metal cathode layer 9 was controlled at 1.0 nm/s.
- the performance of the white organic electroluminescent device prepared in this example was tested.
- the experimental results show that the device emits white light at 462 nm, 515 nm, and 595 nm under the driving of a DC power source.
- the color coordinate of the device is (0.334, 0.336); as the operating voltage changes, the color coordinates of the device are almost unchanged.
- the device has a starting voltage of 3.0 volts and a maximum brightness of the device of 43588 cd/m 2 .
- the device has a maximum current efficiency of 59.84 cd/A and a maximum power efficiency of 62.63 lm/W.
- the ITO anode layer on the ITO glass was first laser etched into strip electrodes, which were then ultrasonically cleaned with cleaning solution and deionized water for 15 min and placed in an oven for drying. Next, the dried substrate was placed in a pretreatment vacuum chamber, and the ITO anode was subjected to low pressure plasma treatment for 3 minutes under a vacuum of 10 Pa in an atmosphere of 400 V, and then transferred to an organic vapor deposition chamber. In an organic vapor deposition chamber having a degree of vacuum of 1 to 2 ⁇ 10 -5 Pa, a 3 nm-thick MoO 3 anode modification layer 3 and a 40 nm-thick TAPC hole-transport-electron barrier layer 4, 10 nm are sequentially deposited on the ITO layer.
- Thick PQ2Ir(dpm) and Ir(ppy) 3 doped TcTa hole-dominated luminescent layer 5 10 nm thick Dy(acac) 3 and FCNIrpic co-doped 26DCzPPy electron-dominated luminescent layer 6 and 40 nm thick TmPyPB hole blocking- Electron transport layer 7.
- the unfinished device was transferred to a metal deposition chamber, and a 1.0 nm thick LiF cathode modification layer 8 was evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa, and finally passed through a special mask on the LiF layer.
- a 120 nm thick metal Al cathode layer 9 was deposited to prepare a structure of ITO/MoO 3 /TAPC/PQ2Ir(dpm) (2.6%): Ir(ppy) 3 (7%): TcTa/Dy(acac) 3 (0.2 %): FCNIrpic (16%): an organic electroluminescent device of 26DCzPPy/TmPyPB/LiF/Al.
- the evaporation rate of MoO 3 in the anode modification layer 3 is controlled at 0.01 nm/s
- the evaporation rate of TAPC in the hole transport-electron blocking layer 4 is controlled at 0.05 nm/s
- Ir The evaporation rates of (ppy) 3 and TcTa are controlled at 0.0013 nm/s, 0.0035 nm/s and 0.05 nm/s, respectively.
- the evaporation rates of Dy(acac) 3 , FCNIrpic and 26DCzPPy in the electron-dominated luminescent layer 6 are controlled at 0.0001 nm, respectively.
- the evaporation rate of TmPyPB in the hole blocking-electron transport layer 7 is controlled at 0.05 nm/s
- the evaporation rate of LiF in the cathode modified layer 8 is controlled at 0.01 nm/s
- metal The evaporation rate of Al in the cathode layer 9 was controlled at 1.0 nm/s.
- the performance of the white organic electroluminescent device prepared in this example was tested.
- the experimental results show that the device emits white light at 462 nm, 515 nm, and 595 nm under the driving of a DC power source.
- the brightness is 20000 cd/m 2
- the color coordinates of the device are (0.333, 0.339); as the operating voltage changes, the color coordinates of the device are almost unchanged.
- the device has a starting voltage of 3.0 volts and a maximum brightness of 44108 cd/m 2 .
- the device has a maximum current efficiency of 60.79 cd/A and a maximum power efficiency of 63.63 lm/W.
- the ITO anode layer on the ITO glass was first laser etched into strip electrodes, which were then ultrasonically cleaned with cleaning solution and deionized water for 15 min and placed in an oven for drying. Next, the dried substrate was placed in a pretreatment vacuum chamber, and the ITO anode was subjected to low pressure plasma treatment for 3 minutes under a vacuum of 10 Pa in an atmosphere of 400 V, and then transferred to an organic vapor deposition chamber.
- a 5 nm-thick MoO 3 anode-modified layer 3 and a 30 nm-thick TAPC hole-transport-electron-blocking layer 4 15 nm were sequentially deposited on the ITO layer.
- Thick Ir(ppy) 2 (acac) and Ir(btp) 2 (acac) doped mCP hole-dominated luminescent layer 5, 15 nm thick Tm(acac) 3 phen and FIr6 co-doped 26DCzPPy electron-dominated luminescent layer 6 and 35 nm thick 3TPYMB hole blocking-electron transport layer 7.
- the unfinished device was transferred to a metal deposition chamber, and a 1.1 nm thick LiF cathode modification layer 8 was evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa, and finally passed through a special mask on the LiF layer.
- a 250 nm thick metal Al cathode layer 9 was deposited to prepare a structure of ITO/MoO 3 /TAPC/Ir(ppy) 2 (acac) (7%): Ir(btp) 2 (acac) (2%): mCP/ Tm(acac) 3 phen (0.2%): FIr6 (12%): 26DCzPPy/3TPYMB/LiF/Al organic electroluminescent device.
- the evaporation rate of MoO 3 in the anode modification layer 3 is controlled at 0.01 nm/s
- the evaporation rate of TAPC in the hole transport-electron barrier layer 4 is controlled at 0.05 nm/s
- the hole dominates the Ir(ppy) 2 in the light-emitting layer 5
- the evaporation rates of acac), Ir(btp) 2 (acac) and mCP are controlled at 0.0035 nm/s, 0.001 nm/s and 0.05 nm/s, respectively, and electrons dominate the luminescent layer 6 Tm(acac) 3 phen, FIr6 and 26DCzPPy
- the evaporation rate is controlled at 0.0001 nm/s, 0.006 nm/s and 0.05 nm/s, respectively.
- the evaporation rate of 3TPYMB in the hole blocking-electron transport layer 7 is controlled at 0.05 nm/s, and the evaporation rate of LiF in the cathode modified layer 8 is controlled. Controlled at 0.01 nm/s, the evaporation rate of Al in the metal cathode layer 9 was controlled at 1.0 nm/s.
- the performance of the white organic electroluminescent device prepared in this example was tested.
- the experimental results show that the device emits white light at 462 nm, 515 nm, and 595 nm under the driving of a DC power source.
- the brightness is 20000 cd/m 2
- the color coordinates of the device are (0.334, 0.335); as the operating voltage changes, the color coordinates of the device are almost unchanged.
- the device has a starting voltage of 3.1 volts and a maximum brightness of the device of 42175 cd/m 2 .
- the device has a maximum current efficiency of 60.10 cd/A and a maximum power efficiency of 60.88 lm/W.
- the ITO anode layer on the ITO glass was first laser etched into strip electrodes, which were then ultrasonically cleaned with cleaning solution and deionized water for 15 min and placed in an oven for drying. Next, the dried substrate was placed in a pretreatment vacuum chamber, and the ITO anode was subjected to low pressure plasma treatment for 3 minutes under a vacuum of 10 Pa in an atmosphere of 400 V, and then transferred to an organic vapor deposition chamber. In an organic vapor deposition chamber having a degree of vacuum of 1 to 2 ⁇ 10 -5 Pa, a 6 nm-thick MoO 3 anode modification layer 3 and a 50 nm-thick TAPC hole-transport-electron barrier layer 4, 12 nm are sequentially deposited on the ITO layer.
- the unfinished device was transferred to a metal deposition chamber, and a 1.1 nm thick LiF cathode modification layer 8 was evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa, and finally passed through a special mask on the LiF layer.
- a 240 nm thick metal Al cathode layer 9 was deposited to prepare a structure of ITO/MoO 3 /TAPC/Ir(mppy) 3 (8%): Ir(piq) 3 (2.2%): TCP/Tm(acac) 3 phen (0.3%): fac-Ir(Pmb) 3 (18%): an organic electroluminescent device of UGH2/BmPyPhB/LiF/Al.
- the evaporation rate of MoO 3 in the anode modification layer 3 is controlled at 0.01 nm/s
- the evaporation rate of TAPC in the hole transport-electron blocking layer 4 is controlled at 0.05 nm/s
- the evaporation rates of Ir(piq) 3 and TCP are controlled at 0.004 nm/s, 0.00011 nm/s and 0.05 nm/s, respectively, and the electron-dominated light-emitting layer 6 has Tm(acac) 3 phen, fac-Ir(Pmb) 3 and UGH2.
- the evaporation rate is controlled at 0.00015 nm/s, 0.009 nm/s and 0.05 nm/s, respectively.
- the evaporation rate of BmPyPhB in the hole blocking-electron transport layer 7 is controlled at 0.05 nm/s, and the evaporation rate of LiF in the cathode modified layer 8 is controlled.
- the performance of the white organic electroluminescent device prepared in this example was tested.
- the experimental results show that the device emits white light at 462 nm, 515 nm, and 595 nm under the driving of a DC power source.
- the color coordinate of the device is (0.331, 0.332); as the operating voltage changes, the color coordinates of the device are almost unchanged.
- the device has a starting voltage of 3.1 volts and a maximum brightness of 39876 cd/m 2 .
- the device has a maximum current efficiency of 58.62 cd/A and a maximum power efficiency of 59.37 lm/W.
- the ITO anode layer on the ITO glass was first laser etched into strip electrodes, which were then ultrasonically cleaned with cleaning solution and deionized water for 15 min and placed in an oven for drying. Next, the dried substrate was placed in a pretreatment vacuum chamber, and the ITO anode was subjected to low pressure plasma treatment for 3 minutes under a vacuum of 10 Pa in an atmosphere of 400 V, and then transferred to an organic vapor deposition chamber. In an organic vapor deposition chamber having a degree of vacuum of 1 to 2 ⁇ 10 -5 Pa, a 3 nm-thick MoO 3 anode modification layer 3 and a 40 nm-thick TAPC hole-transport-electron barrier layer 4, 10 nm are sequentially deposited on the ITO layer.
- the unfinished device was transferred to a metal deposition chamber, and a 1.0 nm thick LiF cathode modification layer 8 was evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa, and finally passed through a special mask on the LiF layer.
- a 120 nm thick metal Al cathode layer 9 was deposited to prepare a structure of ITO/MoO 3 /TAPC/Ir(ppy) 2 (m-bppy) (9%): Ir(piq) 2 (acac) (3%): BSB/Tm(acac) 3 phen (0.3%): mer-Ir(pmb) 3 (25%): BCBP/TPBi/LiF/Al organic electroluminescent device.
- the evaporation rate of MoO 3 in the anode modification layer 3 is controlled at 0.01 nm/s
- the evaporation rate of TAPC in the hole transport-electron barrier layer 4 is controlled at 0.05 nm/s
- the hole dominates the Ir(ppy) 2 in the light-emitting layer 5
- the evaporation rates of m-bppy), Ir(piq) 2 (acac) and BSB are controlled at 0.0045 nm/s, 0.00015 nm/s and 0.05 nm/s, respectively
- the electron-dominated light-emitting layer 6 is Tm(acac) 3 phen, mer
- the evaporation rates of -Ir(pmb) 3 and BCBP are controlled at 0.0003 nm/s, 0.025 nm/s and 0.1 nm/s, respectively, and the evaporation rate of TPBi in the hole blocking-electron transport layer 7 is controlled at 0.08 nm
- the performance of the white organic electroluminescent device prepared in this example was tested.
- the experimental results show that the device emits white light at 462 nm, 515 nm, and 595 nm under the driving of a DC power source.
- the color coordinate of the device is (0.335, 0.341); as the operating voltage changes, the color coordinates of the device are almost unchanged.
- the device has a starting voltage of 3.0 volts and a maximum brightness of the device of 43122 cd/m 2 .
- the device has a maximum current efficiency of 60.55 cd/A and a maximum power efficiency of 63.38 lm/W.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (10)
- 一种白色有机电致发光器件,包括:衬底;复合于所述衬底上的阳极层;复合于所述阳极层上的阳极修饰层;复合于所述阳极修饰层上的空穴传输-电子阻挡层;复合于所述空穴传输-电子阻挡层上的空穴主导发光层;复合于所述空穴主导发光层上的电子主导发光层;复合于所述电子主导发光层上的空穴阻挡-电子传输层;复合于所述空穴阻挡-电子传输层上的阴极修饰层;复合于所述阴极修饰层上的阴极层;所述电子主导发光层由有机敏化材料、蓝色有机发光材料与电子型有机主体材料组成;所述空穴主导发光层由绿色有机发光材料、红色有机发光材料和空穴型有机主体材料组成;所述有机敏化材料选自三(乙酰丙酮)邻菲罗啉合铥和三(乙酰丙酮)邻菲罗啉合镝中的一种或两种;所述有机敏化材料为所述电子型有机主体材料的0.1wt%~0.5wt%。
- 根据权利要求1所述的白色有机电致发光器件,其特征在于,所述蓝色有机发光材料的含量为所述电子型有机主体材料的8.0wt%~25.0wt%。
- 根据权利要求1或2所述的白色有机电致发光器件,其特征在于,所述蓝色有机发光材料选自双(3,5-二氟-4-氰基)吡啶盐酸合铱、双(2,4-二氟苯基吡啶)四(1-吡唑基)硼合铱、三(1-苯基-3-甲基苯并咪哒唑啉-2-基-C,C2’)合铱、三(1-苯基-3-甲基苯并咪哒唑啉-2-基-C,C2’)合铱、双(2,4-二氟苯基吡啶)(5-(吡啶-2-基)-1H-四唑)合铱、三[(2,6-二异丙基苯基)2-苯基-1H-咪唑[e]合铱、三(1-苯基-3-甲基咪哒唑啉-2-基-C,C(2)’)合铱、三(1-苯基-3-甲基咪哒唑啉-2-基-C,C(2)’)合铱、双(1- 苯基-3甲基咪哒唑啉-2-基-C,C2')(2-(2H-吡唑-3-基)-吡啶)合铱、双(1-(4-甲基苯基)-3-甲基咪哒唑啉-2-基-C,C2')(2-(2H-吡唑-3-基)-吡啶)合铱、双(1-(4-氟苯基)-3-甲基咪哒唑啉-2-基-C,C2')(2-(2H-吡唑-3-基)-吡啶)合铱、双(1-(4-氟苯基)-3-甲基咪哒唑啉-2-基-C,C2')(2-(5-三氟甲基-2H-吡唑-3-基)-吡啶)合铱、三(1,3-二苯基-苯并咪唑-2-基-C,C2')合铱、双(1-(4-氟苯基)-3-甲基咪哒唑啉-2-基-C,C2’)(3,5-二甲基-2-(1H-吡唑-5-基)吡啶)合铱、双(1-(4-甲基苯基)-3-甲基咪哒唑啉-2-基-C,C2’)(3,5-二甲基-2-(1H-吡唑-5-基)吡啶)合铱和三(苯基吡唑)合铱中的一种或多种。
- 根据权利要求1所述的白色有机电致发光器件,其特征在于,所述电子型有机主体材料选自2,6-二[3-(9H-9-咔唑基)苯基]吡啶、1,4-双(三苯基硅烷基)苯、2,2’-双(4-(9-咔唑基)苯基)联苯、[2,4,6-三甲基-3-(3-吡啶基)苯基]硼烷、1,3,5-三[(3-吡啶)-3-苯基]苯、1,3-双[3,5-二(3-吡啶基)苯基]苯、1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯、9-(4-特丁基苯基)-3,6-双(三苯基硅基)-9H-咔唑和9-(8-二苯基磷酰基)-二苯唑[b,d]呋喃-9H-咔唑中的一种或多种。
- 根据权利要求1所述的白色有机电致发光器件,其特征在于,所述红色有机发光材料为所述空穴型有机主体材料的1.0wt%~3.0wt%;所述绿色有机发光材料为所述空穴型有机主体材料的5.0wt%~10.0wt%;所述绿色有机发光材料选自三(2-苯基吡啶)合铱、双(2-苯基吡啶)(乙酰丙酮)合铱、三[2-(对-甲基苯基)吡啶]合铱、双(2-苯基吡啶)[2-(二苯基-3-基)吡啶]合铱、三(2-(3-对二甲基苯)吡啶合铱和三(2-苯基-3-甲基-吡啶)合铱中的一种或多种;所述红色有机发光材料选自二(2-苯基喹啉)-(2,2,6,6-四甲基-3,5-庚二酮酸)合铱、二(2-苯唑[b]2-噻吩基吡啶)乙酰丙酮合铱、三(1-苯基异喹啉)合铱、二(1-苯基异喹啉)(乙酰丙酮)合铱、二[1-(9,9-二甲基-9H-芴-2-基)-异喹啉](乙酰丙酮)合铱、二[2-(9,9-二甲基-9H-芴-2-基)喹啉](乙酰丙酮)合铱、二(2-苯基喹啉)(2-(3-甲基苯基)吡啶)合铱、三[2-苯基-4-甲基喹啉]合铱、双(苯基异喹啉)(2,2,6,6-四甲基己烷-3,5-二酮)合 铱、二(2-甲基二苯唑[f,h]喹喔啉)(乙酰丙酮)合铱和二[2-(2-甲基苯基)-7-甲基-喹啉](乙酰丙酮)合铱中的一种或多种;所述空穴型有机主体材料选自4,4’-N,N’-二咔唑二苯基、1,3-二咔唑-9-基苯、9,9'-(5-(三苯基硅烷基)-1,3-苯基)二-9H-咔唑、1,3,5-三(9-咔唑基)苯、4,4',4″-三(咔唑-9-基)三苯胺和1,4-双(三苯基硅烷基)联苯中的一种或多种。
- 根据权利要求1所述的白色有机电致发光器件,其特征在于,所述空穴传输-电子阻挡层的材料选自4,4'-环己基二[N,N-二(4-甲基苯基)苯胺]、二吡嗪[2,3-f:2’,3’-h]喹喔啉-2,3,6,7,10,11-六腈基、N4,N4'-二(萘-1-基)-N4,N4'-双(4-乙烯基苯基)联苯-4,4'-二胺、N,N'-双(3-甲基苯基)-N,N'-双(苯基)-2,7-二胺-9,9-螺双芴、N,N,N',N'-四-(3-甲基苯基)-3-3’-二甲基对二氨基联苯、2,2'-二(3-(N,N-二-对甲苯氨基)苯基)联苯、N,N'-二(萘-2-基)-N,N'-二(苯基)二氨基联苯、N,N'-二(萘-1基)-N,N'–二苯基-2,7-二氨基-9,9-螺双芴、N,N'-二(3-甲基苯基)-N,N'-二苯基-2,7-二氨基-9,9-二甲基芴、N,N'-二(萘-1-基)-N,N'-二苯基-2,7-二氨基-9,9-二甲基芴、N,N'–二(3-甲基苯基)-N,N'–二苯基-2,7-二氨基-9,9-二苯基芴、N,N'-二(萘-1-基)-N,N'-二苯基-2,7-二氨基-9,9-二苯基芴、N,N'-二(萘-1-基)-N,N'-二苯基-2,2’-二甲基二氨基联苯、2,2',7,7'-四(N,N-二苯基氨基)-2,7-二氨基-9,9-螺双芴、9,9-二[4-(N,N–二萘-2-基-氨基)苯基]-9H-芴、9,9-[4-(N-萘-1基-N-苯胺)-苯基]-9H-芴、2,2’-二[N,N-二(4-苯基)氨基]-9,9-螺双芴、2,2’-双(N,N-苯氨基)-9,9-螺双芴、N,N’-二苯基-N,N’-(1-萘基)-1,1’-联苯-4,4’-二胺和4,4’-二[N-(对-甲苯基)-N-苯基-氨基]二苯基中的一种或多种。
- 根据权利要求1所述的白色有机电致发光器件,其特征在于,所述空穴阻挡-电子传输层的材料选自三[2,4,6-三甲基-3-(3-吡啶基)苯基]硼烷、1,3,5-三[(3-吡啶)-3-苯基]苯、1,3-双[3,5-二(3-吡啶基)苯基]苯和1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯中的一种或多种。
- 根据权利要求1所述的白色有机电致发光器件,其特征在于,所述阳极修饰层的厚度为1~10nm,所述空穴传输-电子阻挡层的厚度为 30~60nm,所述空穴主导发光层的厚度为5~20nm,所述电子主导发光层的厚度为5~20nm,所述空穴阻挡-电子传输层的厚度为30~60nm,所述阴极修饰层的厚度为0.8~1.2nm,所述阴极层的厚度为90~300nm。
- 一种白色有机电致发光器件的制备方法,包括:将衬底上的阳极层进行刻蚀,烘干后在所述阳极层上依次蒸镀阳极修饰层、空穴传输-电子阻挡层、空穴主导发光层、电子主导发光层、空穴阻挡-电子传输层、阴极修饰层与阴极层;所述电子主导发光层的材料由有机敏化材料、蓝色有机发光材料与电子型有机主体材料组成;所述有机敏化材料选自三(乙酰丙酮)邻菲罗啉合铥和三(乙酰丙酮)邻菲罗啉合镝中的一种或两种;所述有机敏化材料为所述电子型有机主体材料的0.1wt%~0.5wt%。
- 根据权利要求9所述的制备方法,其特征在于,所述阳极修饰层的蒸发速率为0.01~0.05nm/s,所述空穴传输-电子阻挡层、空穴主导发光层、电子主导发光层与空穴阻挡-电子传输层中主体材料的蒸发速率为0.05~0.1nm/s,所述电子主导发光层中的有机敏化材料的蒸发速率为0.00005~0.0005nm/s,所述电子主导发光层中蓝色有机发光材料的蒸发速率为0.004~0.025nm/s;所述空穴主导发光层中的红色发光材料的蒸发速率为0.0005~0.003nm/s;所述空穴主导发光层中的绿色有机发光材料的蒸发速率为0.0025~0.01nm/s;所述阴极修饰层的蒸发速率为0.005~0.05nm/s,所述阴极层的蒸发速率为0.5~2.0nm/s。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/522,598 US10177324B2 (en) | 2014-10-30 | 2014-11-20 | White organic electroluminescent device and preparation method thereof |
EP14904947.0A EP3214668B1 (en) | 2014-10-30 | 2014-11-20 | White organic electroluminescent device and preparation method thereof |
JP2017523421A JP6501881B2 (ja) | 2014-10-30 | 2014-11-20 | 白色有機エレクトロルミネッセンス素子およびその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410605604.9 | 2014-10-30 | ||
CN201410605604.9A CN104270847B (zh) | 2014-10-30 | 2014-10-30 | 一种白色有机电致发光器件及其制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016065681A1 true WO2016065681A1 (zh) | 2016-05-06 |
Family
ID=52162310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2014/091786 WO2016065681A1 (zh) | 2014-10-30 | 2014-11-20 | 一种白色有机电致发光器件及其制备方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10177324B2 (zh) |
EP (1) | EP3214668B1 (zh) |
JP (1) | JP6501881B2 (zh) |
CN (1) | CN104270847B (zh) |
WO (1) | WO2016065681A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114940684A (zh) * | 2022-05-24 | 2022-08-26 | 浙江大学温州研究院 | 一种白光发光的卤化铜配合物及其制备方法和应用 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10700294B2 (en) | 2014-10-30 | 2020-06-30 | Changchun Institute Of Applied Chemistry, Chinese Academy Of Sciences | Blue organic electroluminescent device and preparation method thereof |
CN104900815A (zh) * | 2015-05-26 | 2015-09-09 | 京东方科技集团股份有限公司 | 双层掺杂磷光发光器件及其制备方法 |
CN105576146B (zh) | 2016-03-23 | 2017-09-26 | 京东方科技集团股份有限公司 | 发光器件及其制造方法和显示装置 |
CN106816542B (zh) * | 2017-01-16 | 2018-10-16 | 中国科学院长春应用化学研究所 | 一种白色有机电致发光器件及其制备方法 |
CN109360897B (zh) * | 2018-09-17 | 2021-01-15 | 云谷(固安)科技有限公司 | 一种显示面板及显示装置 |
CN110931649B (zh) * | 2019-11-29 | 2022-11-15 | 昆山国显光电有限公司 | 一种有机电致发光器件及显示装置 |
CN113402564A (zh) * | 2021-06-16 | 2021-09-17 | 昆明贵金属研究所 | 一种铱(ⅲ)配合物、制备方法及深红光oled器件 |
CN114171694B (zh) * | 2021-12-07 | 2023-06-30 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1438829A (zh) * | 2003-02-13 | 2003-08-27 | 光磊科技股份有限公司 | 有机电激发光装置及其制作方法 |
CN101752509A (zh) * | 2008-12-01 | 2010-06-23 | 乐金显示有限公司 | 白色有机发光设备及其制造方法 |
CN102024909A (zh) * | 2010-09-27 | 2011-04-20 | 电子科技大学 | 一种发光稳定的有机电致发光器件及其制备方法 |
CN102694127A (zh) * | 2011-03-23 | 2012-09-26 | 株式会社东芝 | 有机电场发光元件、显示装置和照明装置 |
CN103022365A (zh) * | 2012-12-18 | 2013-04-03 | 中国科学院长春应用化学研究所 | 白色有机电致发光器件及其制备方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2421793Y (zh) * | 1999-12-01 | 2001-02-28 | 中国科学院长春光学精密机械研究所 | 高效高色纯度镧系金属配合物有机电致发光器件 |
EP2272905A3 (en) * | 2000-06-12 | 2014-10-22 | Sumitomo Chemical Company Limited | compositions for electroluminescent material and their devices |
JP2004319456A (ja) * | 2003-03-31 | 2004-11-11 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス素子 |
KR100924145B1 (ko) | 2008-06-10 | 2009-10-28 | 삼성모바일디스플레이주식회사 | 유기전계발광소자 및 이의 제조방법 |
JP5497284B2 (ja) * | 2008-12-08 | 2014-05-21 | ユー・ディー・シー アイルランド リミテッド | 白色有機電界発光素子 |
CN101504972B (zh) * | 2009-03-24 | 2011-01-05 | 北京大学 | 稀土铽配合物的电致发光器件 |
US9397310B2 (en) | 2011-07-14 | 2016-07-19 | Universal Display Corporation | Organice electroluminescent materials and devices |
CN103931009B (zh) | 2011-11-11 | 2018-01-19 | 三菱化学株式会社 | 有机电致发光元件和有机电致发光器件 |
KR101402526B1 (ko) | 2011-12-26 | 2014-06-09 | 삼성디스플레이 주식회사 | 수명이 향상된 유기발광소자 및 그 제조방법 |
CN104471733B (zh) * | 2012-03-14 | 2017-06-09 | 株式会社半导体能源研究所 | 发光元件、发光装置、电子设备及照明装置 |
CN102887915B (zh) * | 2012-11-01 | 2014-12-31 | 嘉应学院 | 杂核双金属配合物发光材料及其制备方法和用途 |
CN102983288B (zh) | 2012-12-18 | 2016-02-03 | 中国科学院长春应用化学研究所 | 一种蓝绿色有机电致发光器件及其制备方法 |
FR3001730B1 (fr) * | 2013-02-07 | 2016-01-08 | Commissariat Energie Atomique | Nouveaux metallopolymeres et leur utilisation |
CN103219471A (zh) | 2013-04-09 | 2013-07-24 | 吉林大学 | 基于半透明复合阴极的顶发射有机电致发光器件及其制备方法 |
US10700294B2 (en) * | 2014-10-30 | 2020-06-30 | Changchun Institute Of Applied Chemistry, Chinese Academy Of Sciences | Blue organic electroluminescent device and preparation method thereof |
-
2014
- 2014-10-30 CN CN201410605604.9A patent/CN104270847B/zh active Active
- 2014-11-20 US US15/522,598 patent/US10177324B2/en active Active
- 2014-11-20 WO PCT/CN2014/091786 patent/WO2016065681A1/zh active Application Filing
- 2014-11-20 JP JP2017523421A patent/JP6501881B2/ja active Active
- 2014-11-20 EP EP14904947.0A patent/EP3214668B1/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1438829A (zh) * | 2003-02-13 | 2003-08-27 | 光磊科技股份有限公司 | 有机电激发光装置及其制作方法 |
CN101752509A (zh) * | 2008-12-01 | 2010-06-23 | 乐金显示有限公司 | 白色有机发光设备及其制造方法 |
CN102024909A (zh) * | 2010-09-27 | 2011-04-20 | 电子科技大学 | 一种发光稳定的有机电致发光器件及其制备方法 |
CN102694127A (zh) * | 2011-03-23 | 2012-09-26 | 株式会社东芝 | 有机电场发光元件、显示装置和照明装置 |
CN103022365A (zh) * | 2012-12-18 | 2013-04-03 | 中国科学院长春应用化学研究所 | 白色有机电致发光器件及其制备方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3214668A4 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114940684A (zh) * | 2022-05-24 | 2022-08-26 | 浙江大学温州研究院 | 一种白光发光的卤化铜配合物及其制备方法和应用 |
Also Published As
Publication number | Publication date |
---|---|
EP3214668A1 (en) | 2017-09-06 |
JP6501881B2 (ja) | 2019-04-17 |
EP3214668A4 (en) | 2018-07-04 |
CN104270847A (zh) | 2015-01-07 |
CN104270847B (zh) | 2016-09-28 |
EP3214668B1 (en) | 2019-08-21 |
JP2017533594A (ja) | 2017-11-09 |
US10177324B2 (en) | 2019-01-08 |
US20180248138A1 (en) | 2018-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2016065681A1 (zh) | 一种白色有机电致发光器件及其制备方法 | |
CN109980085B (zh) | 一种含有覆盖层的有机电致发光装置及用途 | |
JP6663427B2 (ja) | 有機電界発光素子 | |
CN109860425B (zh) | 一种含有覆盖层的有机电致发光装置及用途 | |
WO2016065677A1 (zh) | 一种红色有机电致发光器件及其制备方法 | |
JPWO2018198844A1 (ja) | 有機電界発光素子 | |
US8816329B2 (en) | Radiation-emitting device | |
KR101668044B1 (ko) | 고효율 청색 발광층을 가진 oled | |
CN102414856A (zh) | 发射辐射的装置 | |
WO2016065678A1 (zh) | 一种蓝色有机电致发光器件及其制备方法 | |
Liu et al. | Improved color quality in double-EML WOLEDs by using a tetradentate Pt (II) complex as a green/red emitter | |
Yu et al. | Highly-efficient tandem organic light-emitting device employing bis-4, 6-(3, 5-di-3-pyridylphenyl)-2-methylpyrimi-dine doped with cesium azide in charge generation unit | |
Wu et al. | Highly efficient green single-emitting layer phosphorescent organic light-emitting diodes with an iridium (iii) complex as a hole-type sensitizer | |
Liu et al. | Highly efficient white organic light-emitting devices consisting of undoped ultrathin yellow phosphorescent layer | |
Qiao et al. | Pure red electroluminescence from a host material of binuclear gallium complex | |
KR100990451B1 (ko) | 샌드위치 혼합된 이중 발광호스트를 이용한 고효율 인광유기발광다이오드 및 그의 제조 방법 | |
Li et al. | High performance pure blue organic fluorescent electroluminescent devices by utilizing a traditional electron transport material as the emitter | |
WO2016065679A1 (zh) | 一种黄色有机电致发光器件及其制备方法 | |
WO2016065680A1 (zh) | 一种绿色有机电致发光器件及其制备方法 | |
CN110165065B (zh) | 一种高效率/色品质/色稳定性叠层白光有机发光二极管 | |
Li et al. | High-performance full phosphorescent warm white organic light-emitting diodes with external quantum efficiency of 34.5% | |
KR101101940B1 (ko) | 이중 도핑을 이용한 고효율 진적색 인광 유기발광소자 및 그 제조 방법 | |
Wu et al. | Highly efficient and color-stable white organic light-emitting diode based on a novel blue phosphorescent host | |
CN117750796A (zh) | 一种白色有机电致发光器件及其制备方法 | |
Li et al. | Highly efficient co-doped blue phosphorescent organic electroluminescent devices due to improved carriers balance and broadening recombination zone |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14904947 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15522598 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 2017523421 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
REEP | Request for entry into the european phase |
Ref document number: 2014904947 Country of ref document: EP |