WO2016065679A1 - 一种黄色有机电致发光器件及其制备方法 - Google Patents

一种黄色有机电致发光器件及其制备方法 Download PDF

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WO2016065679A1
WO2016065679A1 PCT/CN2014/091783 CN2014091783W WO2016065679A1 WO 2016065679 A1 WO2016065679 A1 WO 2016065679A1 CN 2014091783 W CN2014091783 W CN 2014091783W WO 2016065679 A1 WO2016065679 A1 WO 2016065679A1
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layer
electron
bis
light
hole
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French (fr)
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周亮
张洪杰
崔荣朕
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中国科学院长春应用化学研究所
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium

Definitions

  • the invention relates to the field of organic electroluminescence technology, in particular to a yellow organic electroluminescent device and a preparation method thereof.
  • An organic electroluminescent device is a self-luminous device whose principle of illumination is that when an electric charge is injected into an organic layer between a hole injecting electrode and an electron injecting electrode, electrons and holes meet, combine, and then annihilate, thereby generating Light.
  • Organic electroluminescent devices have characteristics such as low voltage, high brightness, and wide viewing angle, and thus organic electroluminescent devices have been rapidly developed in recent years. Among them, the yellow organic electroluminescent device has become a research hotspot because of its broad application prospects in monochrome display and white light modulation.
  • the trivalent europium complex has been regarded as an ideal organic electroluminescent material by academics and industry because of its high luminous efficiency and adjustable color of light. Many research teams at home and abroad have started from material synthesis and device optimization to improve the comprehensive performance of yellow organic electroluminescent devices to meet the needs of industrialization. For example, in 2009, Ma Dongge and others from the Changchun Institute of Applied Chemistry of the Chinese Academy of Sciences chose high-efficiency ruthenium complex (fbi) 2 Ir(acac) as a yellow dye, which was prepared by incorporating it into a preferred host material. A layered yellow organic electroluminescent device. The device has high maximum luminous efficiency and maximum brightness. However, the luminous efficiency of the device is rapidly attenuated with the increase of current density. In addition, the complicated device structure not only causes high fabrication cost of the device, but also is not conducive to reducing the operation of the device. Voltage.
  • the technical problem to be solved by the present invention is to provide a yellow organic electroluminescent device with high comprehensive performance and a preparation method thereof.
  • a yellow organic electroluminescent device comprising:
  • the electron-dominated light-emitting layer is composed of an organic sensitizing material, a yellow organic light-emitting material and an electronic type organic host material;
  • the organic sensitizing material is selected from one or two of tris(acetylacetonate) ruthenium and tris(acetylacetonate) linofoline ruthenium;
  • the organic sensitizing material is from 0.1% by weight to 0.5% by weight of the electronic type organic host material.
  • the content of the yellow organic light-emitting material is 1.0% by weight to 3.0% by weight of the electronic organic organic host material.
  • the yellow organic light-emitting material is selected from the group consisting of bis(2-(9,9-diethyl-indol-2-yl)-1-phenyl-1H-benzo[d]imidazole)acetylacetonate ruthenium, Bis(2-phenylbenzothiazole) (acetylacetone) ruthenium, tris[3-(2,6-dimethylphenol)-6-phenylpyridazine] ruthenium and bis(2-phenylpyridine) And one or more of (3-(pyridin-2-yl)-2H-benzopyran-2-one).
  • the electronic organic host material is selected from the group consisting of 2,6-bis[3-(9H-9-carbazolyl)phenyl]pyridine, 1,4-bis(triphenylsilyl)benzene, 2, 2'-bis(4-(9-carbazolyl)phenyl)biphenyl, three [2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane, 1,3,5-tris[(3-pyridyl)-3-phenyl]benzene, 1,3- Bis[3,5-bis(3-pyridyl)phenyl]benzene, 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene, 9-(4-tertidine Phenyl)-3,6-bis(triphenylsilyl)-9H-carbazole and 9-(8-diphenylphosphoryl)-diazole [b,d]furan-9H
  • the hole-priming light-emitting layer is composed of a yellow organic light-emitting material and a hole-type organic host material; the yellow organic light-emitting material is 1.0 wt% to 3.0 wt% of the hole type organic host material;
  • the yellow organic luminescent material is selected from the group consisting of bis(2-(9,9-diethyl-indol-2-yl)-1-phenyl-1H-benzo[d]imidazole)acetylacetonate ruthenium, bis (2) -Phenylbenzothiazole) (acetylacetonate) ruthenium, tris[3-(2,6-dimethylphenol)-6-phenylpyridazine] ruthenium and bis(2-phenylpyridine) (3 One or more of -(pyridin-2-yl)-2H-benzopyran-2-one);
  • the hole-type organic host material is selected from the group consisting of 4,4'-N, N'-dicarbazole diphenyl, 1,3-dioxazole-9-ylbenzene, 9,9'-(5-(three Phenylsilyl)-1,3-phenyl)di-9H-carbazole, 1,3,5-tris(9-oxazolyl)benzene, 4,4',4"-tris(carbazole-9 One or more of triphenylamine and 1,4-bis(triphenylsilyl)biphenyl.
  • the material of the hole transporting-electron blocking layer is selected from the group consisting of 4,4'-cyclohexyl bis[N,N-bis(4-methylphenyl)aniline], dipyrazine [2,3-f :2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile, N4,N4'-di(naphthalen-1-yl)-N4,N4'-double ( 4-vinylphenyl)biphenyl-4,4'-diamine, N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-2,7-diamine -9,9-spirobiguanide, N,N,N',N'-tetrakis(3-methylphenyl)-3-3'-dimethyl-p-diaminobiphenyl, 2,2'-di (3-(N,N-di-p-tolylamino)pheny
  • the material of the hole blocking-electron transport layer is selected from the group consisting of tris[2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane, 1,3,5-tri [ (3-pyridine)-3-phenyl]benzene, 1,3-bis[3,5-bis(3-pyridyl)phenyl]benzene and 1,3,5-tris(1-phenyl-1H- One or more of benzimidazol-2-yl)benzene.
  • the anode modification layer has a thickness of 1 to 10 nm
  • the hole transport-electron barrier layer has a thickness of 30 to 60 nm
  • the hole-dominant light-emitting layer has a thickness of 5 to 20 nm.
  • the thickness of the layer is 5 to 20 nm
  • the thickness of the hole blocking-electron transport layer is 30 to 60 nm
  • the thickness of the cathode modification layer is 0.8 to 1.2 nm
  • the thickness of the cathode layer is 90 to 300 nm.
  • the application also provides a method for preparing a yellow organic electroluminescent device, comprising:
  • the anode layer on the substrate is etched, and after drying, the anode modification layer, the hole transport-electron barrier layer, the hole-dominant light-emitting layer, the electron-dominated light-emitting layer, and the hole blocking are sequentially deposited on the anode layer.
  • the electron-dominated light-emitting layer is composed of an organic sensitizing material, a yellow organic light-emitting material and an electronic type organic host material;
  • the organic sensitizing material is selected from one or two of tris(acetylacetonate) ruthenium and tris(acetylacetonate) linofoline ruthenium;
  • the organic sensitizing material is from 0.1% by weight to 0.5% by weight of the electronic type organic host material.
  • the evaporation rate of the anode modification layer is 0.01-0.05 nm/s
  • the host material in the hole transport-electron blocking layer, the hole-dominant light-emitting layer, the electron-dominated light-emitting layer and the hole blocking-electron transport layer The evaporation rate is 0.05-0.1 nm/s
  • the evaporation rate of the organic sensitizing material in the electron-dominated light-emitting layer is 0.00005-0.0005 nm/s
  • the yellow light in the electron-dominated light-emitting layer and the hole-dominant light-emitting layer The evaporation rate of the material is 0.0005 to 0.003 nm/s
  • the evaporation rate of the cathode modification layer is 0.005 to 0.05 nm/s
  • the evaporation rate of the cathode layer is 0.5 to 2.0 nm/s.
  • the present application provides a yellow organic electroluminescent device comprising a substrate, an anode layer, an anode modification layer, a hole transport-electron barrier layer, a hole-dominant light-emitting layer, an electron-dominated light-emitting layer, hole blocking-electron transport Layer, cathode modification layer and cathode layer.
  • the luminescent material of the present application is yellow
  • electrons and holes when electrons and holes are respectively injected into the luminescent layer, electrons and holes will meet and recombine, thereby generating an exciton, which will transfer energy to the molecules of the yellow luminescent material in the luminescent layer, exciting one
  • the excited electrons return to the ground state by a radiation transition to generate a yellow photon, thereby causing the organic electroluminescent device to emit yellow light.
  • one or two of tris(acetylacetonate) ruthenium and tris(acetylacetonate) linofol oxalate are added as an organic sensitizing material in an electron-dominated light-emitting layer to make their energy levels and triplet energy.
  • the organic sensitizing material functions as a carrier deep-binding center and an energy transfer step in the electroluminescence process, and can not only improve the material from the host material to the luminescence.
  • the energy transfer of the material can also balance the distribution of electrons and holes in the light-emitting interval, thereby improving the luminous efficiency of the organic electroluminescent device, improving the spectral stability of the device, reducing the operating voltage of the device, delaying the efficiency degradation of the device, and improving the device. Working life.
  • FIG. 1 is a schematic structural view of a yellow organic electroluminescent device of the present invention.
  • Example 2 is a graph showing voltage-current density-luminance characteristics of a yellow organic electroluminescent device prepared in Example 1 of the present invention
  • Example 3 is a graph showing current density-power efficiency-current efficiency characteristics of a yellow organic electroluminescent device prepared in Example 1 of the present invention
  • Example 4 is a spectrum diagram of a yellow organic electroluminescent device prepared in Example 1 of the present invention at a luminance of 20,000 cd/m 2 .
  • the embodiment of the invention discloses a yellow organic electroluminescent device, comprising:
  • the electron-dominated light-emitting layer is composed of an organic sensitizing material, a yellow organic light-emitting material and an electronic type organic host material;
  • the organic sensitizing material is selected from one or two of tris(acetylacetonate) ruthenium and tris(acetylacetonate) linofoline ruthenium;
  • the organic sensitizing material is from 0.1% by weight to 0.5% by weight of the electronic type organic host material.
  • OLED organic electroluminescent device
  • the organic electroluminescent device is yellowed.
  • the yellow organic electroluminescent device described in the present application comprises a substrate, an anode layer, an anode modification layer, a hole transport-electron blocking layer, a hole-dominant light-emitting layer, an electron-dominated light-emitting layer, a hole blocking-electron transport layer, and a cathode modification.
  • the layer and the cathode layer are sequentially connected to each other.
  • the hole-bearing light-emitting layer and the electron-based light-emitting layer are light-emitting layers of a yellow organic electron-emitting device.
  • the electronic dominant light-emitting layer of the invention is composed of an organic sensitizing material, a yellow organic light-emitting material and an electronic organic organic material, wherein the organic sensitizing material plays a sensitizing role in the electroluminescence process to improve the light from the host material to the light-emitting material.
  • the energy of the material transfers and balances the distribution of electrons and holes in the light-emitting interval; the molecules of the yellow organic light-emitting material are dispersed in the electron-dominated light-emitting layer as a light-emitting center; the electronic-type organic host material acts as a matrix to provide electron transport capability.
  • the energy level and the triplet energy of the organic sensitizing material need to match the energy level of the host material, the luminescent material, and the triplet energy to balance the distribution of electrons and holes in the light-emitting interval and accelerate
  • the energy transfer from the host material to the luminescent material gives the yellow organic electroluminescent device a good overall performance. Therefore, the present application selects a rare earth complex selected from a tris(acetylacetonate) ruthenium (Tb(acac) having a structure of the formula (IX) by selecting an illuminating material. 3 ) and one or both of tris(acetylacetonate) linofene ruthenium (Tb(acac) 3 phen) having the structure of formula (X);
  • the doping concentration of the organic sensitizing material in the electron-based light-emitting layer of the present invention affects the performance of the organic electroluminescent device. If the doping concentration of the organic sensitizing material is too low, the sensitizing effect is unsatisfactory, and if the doping concentration is too high, the overall performance of the organic electroluminescent device is lowered. Therefore, the organic sensitizing material is from 0.1% by weight to 0.5% by weight, preferably from 0.2% by weight to 0.3% by weight, of the electronic type organic host material.
  • the yellow organic light-emitting material in the electron-based light-emitting layer is a light-emitting material well known to those skilled in the art, and the present application is not particularly limited, but in order to make the light-emitting effect better, the yellow organic light-emitting material is preferentially selected.
  • the doping concentration of the yellow organic light-emitting material also affects the overall performance of the yellow organic electroluminescent device. If the doping concentration of the yellow organic light-emitting material is too low, the device efficiency is low and the color purity is not ideal. If the doping concentration is too high, the luminescent material molecules are agglomerated to form quenching molecules, and finally the device is integrated. performance. Therefore, the yellow organic light-emitting material in the electron-based light-emitting layer is preferably from 1.0 wt% to 3.0 wt%, more preferably from 1.5 wt% to 2.5 wt%, of the electron-type organic host material.
  • the electronic type host material functions as a matrix in the electron-dominated light-emitting layer to provide electron transport capability, and the electronic type host material is a material well known to those skilled in the art, and as a preferred embodiment, the electronic type host material is preferentially selected.
  • the hole-preferred light-emitting layer described in the present application is composed of a yellow organic light-emitting material and a hole-type organic host material, wherein molecules of the yellow organic light-emitting material are dispersed in the hole-dominant light-emitting layer as a light-emitting center.
  • the yellow organic light-emitting material is preferably 1.0 wt% to 3.0 wt%, more preferably 1.5 wt% to 2.5 wt% of the hole type organic host material in the hole-priming light-emitting layer; the yellow organic light-emitting If the doping concentration of the material is too low, the device efficiency is low and the color purity is not ideal.
  • the hole-type host material functions as a matrix to provide hole transporting ability.
  • the yellow organic light-emitting material in the hole-priming light-emitting layer described in the present application is preferably selected from bis(2-(9,9-diethyl-inden-2-yl)-1-) having the structure of the formula (II 1 ) Phenyl-1H-benzo[d]imidazole)acetylacetonate ruthenium ((fbi) 2 Ir(acac)), bis(2-phenylbenzothiazole) (acetylacetonate) having the structure of formula (II 2 ) Iridium (BT) 2 (acac), tris[3-(2,6-dimethylphenol)-6-phenylpyridazine] ruthenium of formula (II 3 ) (Ir (DMP)
  • the hole-type organic host material is preferably selected from the group consisting of 4,4'-N,N'-dicarbazole diphenyl (CBP) having the structure of formula (III), and 1,3-two having the structure of formula (IV) Carbazole-9-ylbenzene (mCP), 9,9'-(5-(triphenylsilyl)-1,3-phenyl)di-9H-carbazole (SimCP) having the structure of formula (V) 1,3,5-tris(9-carbazolyl)benzene (TCP) having the structure of formula (VI), having the structure of formula (VII) One of 4,4',4"-tris(carbazol-9-yl)triphenylamine (TcTa) and 1,4-bis(triphenylsilyl)biphenyl (BSB) having the structure of formula (VIII) Species or more;
  • CBP 4,4'-N,N'-dicarbazole diphenyl
  • mCP Car
  • the substrate may be a glass substrate, a quartz substrate, a polycrystalline silicon substrate, a single crystal silicon substrate or a graphene film substrate, which is not particularly limited in the present application.
  • the anode layer is preferably selected from indium tin oxide (ITO), and its surface resistance is preferably 5 to 25 ⁇ .
  • ITO indium tin oxide
  • the anode modification layer can lower the driving voltage and accelerate the injection of holes, and the anode modification layer is preferably molybdenum oxide (MoO 3 ).
  • the hole transport-electron blocking layer described in this application functions to transport holes and block electrons.
  • the material of the hole transport-electron barrier layer is preferably selected from 4,4'-cyclohexyl bis[N,N-bis(4-methylphenyl)aniline] (TAPC) having the structure of formula (I 1 ) Dipyrazine [2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile group (HAT-CN) having the structure of formula (I 2 ) N4,N4'-bis(naphthalen-1-yl)-N4,N4'-bis(4-vinylphenyl)biphenyl-4,4'-diamine (VNPB) having the structure of formula (I 3 ) N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-2,7-diamine-9,9-spirobiguanidine having the structure of formula (I 4 )
  • the hole blocking-electron transporting layer functions to block holes and transport electrons to promote electron injection.
  • the material of the hole blocking-electron transport layer is preferably selected from tris[2,4,6-trimethyl-3-(3-pyridyl)phenyl]borane (3TPYMB) having the structure of the formula (XIV), 1,3,5-tris[(3-pyridyl)-3-phenyl]benzene (TmPyMB) having the structure (XV), 1,3-bis[3,5-di ((3,5-di) having the structure of formula (XVI) 3-pyridyl)phenyl]benzene (BmPyPhB) and one of 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi) having the structure of formula (XVII) Species or more;
  • the function of the cathode modification layer described in the present application is to lower the driving voltage and accelerate the injection of electrons, and the cathode modification layer is preferably lithium fluoride.
  • the cathode layer is preferably aluminum.
  • the source of the material of the hole transporting-electron blocking layer, the yellow organic light emitting material, the hole type organic host material, the organic sensitizing material, the electronic type organic host material, and the hole blocking-electron transport layer Without particular limitation, it can be obtained by preparation in a manner well known to those skilled in the art.
  • the anode layer and the cathode layer intersect each other to form a light-emitting region of the device, and the thickness of each layer in the yellow organic electroluminescent device of the present application has a great influence on the device, if the thickness is low. This will result in faster device efficiency degradation. If the thickness is higher, the device will operate at a higher voltage and have a lower lifetime.
  • the thickness of the anode modification layer is preferably from 1 to 10 nm
  • the thickness of the hole transport-electron barrier layer is preferably from 30 to 60 nm
  • the thickness of the hole-preferred light-emitting layer is preferably from 5 to 20 nm
  • the thickness of the electron-dominated light-emitting layer is preferably 5 to 20 nm
  • the thickness of the hole blocking-electron transport layer is preferably 30 to 60 nm
  • the thickness of the cathode modified layer is preferably 0.8 to 1.2 nm
  • the thickness of the cathode layer is preferably 90 to 300 nm.
  • the application also provides a preparation method of the yellow organic electroluminescent device, comprising:
  • the anode layer on the substrate is etched, and after drying, the anode modification layer, the hole transport-electron barrier layer, the hole-dominant light-emitting layer, the electron-dominated light-emitting layer, and the hole blocking are sequentially deposited on the anode layer.
  • the hole-priming light-emitting layer is composed of a yellow organic light-emitting material and a hole-type organic host material;
  • the electron-dominated light-emitting layer is composed of an organic sensitizing material, a yellow organic light-emitting material and an electronic type organic host material;
  • the organic sensitizing material is selected from one or two of tris(acetylacetonate) ruthenium and tris(acetylacetonate) linofoline ruthenium;
  • the organic sensitizing material is 0.1 wt% to 0.5 wt% of the electronic type organic host material
  • the preparation method of the yellow organic electroluminescent device is specifically:
  • the anode layer on the substrate is laser etched into strip electrodes, and then ultrasonically washed with washing liquid and deionized water for 10-20 min and placed in an oven for drying;
  • the dried substrate is placed in a pretreatment vacuum chamber, and subjected to a low pressure plasma treatment for 1 to 10 minutes under a vacuum of 8 to 15 Pa in an atmosphere of 350 to 500 V, and then transferred to an organic vapor deposition chamber;
  • the anode modification layer, the hole transport-electron barrier layer, the hole-dominant light-emitting layer, the electron-dominated light-emitting layer, and the hole blocking-electron transport are sequentially deposited on the anode layer.
  • the unfinished device was transferred to a metal deposition chamber, and the cathode modified layer and the metal cathode layer were sequentially evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa.
  • the present application achieves deposition of a material by controlling the evaporation rate.
  • the evaporation rate of the anode modification layer is controlled to be 0.01 to 0.05 nm/s, and the host material in the hole transport-electron blocking layer, the hole-dominant light-emitting layer, the electron-dominated light-emitting layer, and the hole blocking-electron transport layer
  • the evaporation rate is controlled at 0.05-0.1 nm/s
  • the evaporation rate of the organic sensitizing material is controlled at 0.00005-0.0005 nm/s
  • the evaporation rate of the yellow organic luminescent material is controlled at 0.0005-0.003 nm/s.
  • the evaporation rate control of the cathode modified layer is controlled. At 0.005 to 0.015 The nm/s, metal cathode layer evaporation rate is controlled at 0.5 to 2.0 nm/s. Where the vapor-emitting holes dominate the light-emitting layer, wherein the yellow organic light-emitting material and the hole-type organic host material are simultaneously evaporated in different evaporation sources, and the doped yellow organic light-emitting materials and holes are controlled by controlling the evaporation rates of the two materials.
  • the weight ratio of the organic organic material is controlled to be between 1.0% and 3.0%; when the electrons are dominated by the light-emitting layer, the organic sensitizing material, the yellow organic light-emitting material, and the electronic organic organic material are simultaneously evaporated in different evaporation sources.
  • the mass ratio of the doped organic sensitizing material and the electronic organic organic material is controlled to be between 0.1% and 0.5%, so that the doped yellow organic luminescent material and the electronic organic organic material are The mass ratio is controlled between 1.0% and 3.0%.
  • the present application provides a yellow organic electroluminescent device in which a rare earth complex having a matching energy level distribution, such as Tb(acac) 3 or Tb (acac), is selected among electron-dominated light-emitting layers in the yellow organic electroluminescent device.
  • a rare earth complex having a matching energy level distribution such as Tb(acac) 3 or Tb (acac)
  • 3 phen as an organic sensitizing material, which plays the role of electron deep-binding center, which is beneficial to balance the distribution of carriers and broaden the light-emitting interval of the device, thereby improving the luminous efficiency of the device, reducing the operating voltage of the device, and delaying the device.
  • the organic sensitizing material has matched triplet energy, functions as an energy transfer step, accelerates energy transfer from the host material to the luminescent material, and relieves luminescent material carriers
  • the problem of luminescence of the host material caused by insufficient capture capability, thereby improving the spectral stability of the device and reducing the dependence of device performance on the doping concentration of the luminescent material.
  • FIG. 1 is a schematic structural view of a yellow organic electroluminescent device according to the present invention, wherein 1 is a glass substrate, 2 is an anode layer, 3 is an anode modification layer, and 4 is a hole transport-electron blocking layer, 5 The hole is the luminescent layer, 6 is the electron-dominated luminescent layer, 7 is the hole blocking-electron transport layer, 8 is the cathode modified layer, and 9 is the metal cathode layer.
  • the ITO anode layer on the ITO glass was first laser etched into strip electrodes, which were then ultrasonically cleaned with cleaning solution and deionized water for 15 min and placed in an oven for drying. Next, the dried substrate was placed in a pretreatment vacuum chamber, and the ITO anode was subjected to low pressure plasma treatment for 3 minutes under a vacuum of 10 Pa in an atmosphere of 400 V, and then transferred to an organic vapor deposition chamber. In an organic vapor deposition chamber having a degree of vacuum of 1 to 2 ⁇ 10 -5 Pa, a 3 nm-thick MoO 3 anode modification layer 3 and a 40 nm-thick TAPC hole-transport-electron barrier layer 4, 10 nm are sequentially deposited on the ITO layer.
  • the unfinished device was transferred to a metal deposition chamber, and a 1.0 nm thick LiF cathode modification layer 8 was evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa, and finally passed through a special mask on the LiF layer.
  • a 120 nm thick metal Al cathode layer 9 was deposited to prepare a structure of ITO/MoO 3 /TAPC/(fbi) 2 Ir(acac)(2%): TcTa/Tb(acac) 3 phen(0.2%): (fbi 2 Ir(acac) (2%): an organic electroluminescent device of CzSi/TmPyPB/LiF/Al.
  • the evaporation rate of MoO 3 in the anode modification layer 3 is controlled at 0.01 nm/s
  • the evaporation rate of TAPC in the hole transport-electron blocking layer 4 is controlled at 0.05 nm/s
  • the evaporation rates of acac) and TcTa are controlled at 0.001 nm/s and 0.05 nm/s, respectively.
  • the evaporation rates of Tb(acac) 3 phen, (fbi) 2 Ir(acac) and CzSi in the electron-dominated luminescent layer 6 are controlled at 0.0001, respectively.
  • the evaporation rate of TmPyPB in the hole blocking-electron transport layer 7 is controlled at 0.05 nm/s
  • the evaporation rate of LiF in the cathode modified layer 8 is controlled at 0.005 nm/s.
  • the evaporation rate of Al in the metal cathode layer 9 was controlled at 1.0 nm/s.
  • FIG. 2 is a voltage-current density-luminance characteristic curve of the yellow organic electroluminescent device prepared in the present embodiment, wherein the curve ⁇ in FIG. 2 is the current density-voltage curve of the device, and the ⁇ curve is the brightness of the device.
  • - voltage curve according to Figure 2, the brightness of the device increases with the increase of current density and driving voltage, the device's starting voltage is 3.0 volts, the voltage is 9.8 volts, and the current density is 553.42 mA per square centimeter. (mA/cm 2 ) The device achieved a maximum brightness of 84,871 candelas per square meter (cd/m 2 ).
  • FIG. 3 is a current density-power efficiency-current efficiency characteristic curve of the yellow organic electroluminescent device prepared in the present embodiment.
  • the maximum current efficiency of the device is 83.84 cd/A, and the maximum power is obtained.
  • the efficiency is 87.75 lm / W.
  • FIG. 4 is a spectrum diagram of a yellow organic electroluminescent device provided by the present invention at a luminance of 20,000 cd/m 2 .
  • the main peak of the spectrum is located at 563 nm.
  • the color coordinates of the device are (0.446, 0.532).
  • the ITO anode layer on the ITO glass was first laser etched into strip electrodes, which were then ultrasonically cleaned with cleaning solution and deionized water for 15 min and placed in an oven for drying. Next, the dried substrate was placed in a pretreatment vacuum chamber, and the ITO anode was subjected to low pressure plasma treatment for 3 minutes under a vacuum of 10 Pa in an atmosphere of 400 V, and then transferred to an organic vapor deposition chamber. In an organic vapor deposition chamber having a degree of vacuum of 1 to 2 ⁇ 10 -5 Pa, a 3 nm-thick MoO 3 anode modification layer 3 and a 40 nm-thick TAPC hole-transport-electron barrier layer 4, 10 nm are sequentially deposited on the ITO layer.
  • the unfinished device was transferred to a metal deposition chamber, and a 1.0 nm thick LiF cathode modification layer 8 was evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa, and finally passed through a special mask on the LiF layer.
  • a 120 nm thick metal Al cathode layer 9 was deposited to prepare a structure of ITO/MoO 3 /TAPC/(fbi) 2 Ir(acac)(2%): mCP/Tb(acac) 3 phen(0.2%): (fbi 2 Ir(acac) (2%): an organic electroluminescent device of 26DCzPPy/TmPyPB/LiF/Al.
  • the evaporation rate of MoO 3 in the anode modification layer 3 is controlled at 0.01 nm/s
  • the evaporation rate of TAPC in the hole transport-electron blocking layer 4 is controlled at 0.05 nm/s
  • the evaporation rates of acac) and mCP are controlled at 0.001 nm/s and 0.05 nm/s, respectively.
  • the evaporation rates of Tb(acac) 3 phen, (fbi) 2 Ir(acac) and 26DCzPPy in electron-dominated luminescent layer 6 are controlled at 0.0001, respectively.
  • the evaporation rate of TmPyPB in the hole blocking-electron transport layer 7 is controlled at 0.05 nm/s
  • the evaporation rate of LiF in the cathode modified layer 8 is controlled at 0.005 nm/s.
  • the evaporation rate of Al in the metal cathode layer 9 was controlled at 1.0 nm/s.
  • the performance of the yellow organic electroluminescent device prepared in this example was tested.
  • the experimental results show that the device emits yellow light at about 563 nm under the driving of a DC power source.
  • the color coordinate of the device is (0.445, 0.531); as the operating voltage changes, the color coordinates of the device are almost unchanged.
  • the device has a starting voltage of 3.1 volts and the maximum brightness of the device is 79548 cd/m 2 .
  • the device has a maximum current efficiency of 81.26 cd/A and a maximum power efficiency of 82.31 lm/W.
  • the ITO anode layer on the ITO glass was first laser etched into strip electrodes, which were then ultrasonically cleaned with a cleaning solution and deionized water for 15 min and placed in an oven for drying. Next, the dried substrate was placed in a pretreatment vacuum chamber, and the ITO anode was subjected to low pressure plasma treatment for 3 minutes under a vacuum of 10 Pa in an atmosphere of 400 V, and then transferred to an organic vapor deposition chamber. In an organic vapor deposition chamber having a degree of vacuum of 1 to 2 ⁇ 10 -5 Pa, a 3 nm-thick MoO 3 anode modification layer 3 and a 40 nm-thick TAPC hole-transport-electron barrier layer 4, 10 nm are sequentially deposited on the ITO layer.
  • the unfinished device was transferred to a metal deposition chamber, and a 1.0 nm thick LiF cathode modification layer 8 was evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa, and finally passed through a special mask on the LiF layer.
  • a 120 nm thick metal Al cathode layer 9 was deposited to prepare a structure of ITO/MoO 3 /TAPC/(fbi) 2 Ir(acac)(2%): TcTa/Tb(acac) 3 (0.3%): (fbi) 2 Ir(acac) (2%): an organic electroluminescent device of 26DCzPPy/TmPyPB/LiF/Al.
  • the evaporation rate of MoO 3 in the anode modification layer 3 is controlled at 0.01 nm/s
  • the evaporation rate of TAPC in the hole transport-electron blocking layer 4 is controlled at 0.05 nm/s
  • the evaporation rates of acac) and TcTa are controlled at 0.001 nm/s and 0.05 nm/s, respectively.
  • the evaporation rates of Tb(acac) 3 , (fbi) 2 Ir(acac) and 26DCzPPy in the electron-dominated luminescent layer 6 are controlled at 0.0003 nm, respectively.
  • the evaporation rate of TmPyPB in the hole blocking-electron transport layer 7 is controlled at 0.05 nm/s
  • the evaporation rate of LiF in the cathode modified layer 8 is controlled at 0.005 nm/s
  • metal The evaporation rate of Al in the cathode layer 9 was controlled at 1.0 nm/s.
  • the performance of the yellow organic electroluminescent device prepared in this example was tested.
  • the experimental results show that the device emits yellow light at about 563 nm under the driving of a direct current power source.
  • the color coordinate of the device is (0.445, 0.536); as the operating voltage changes, the color coordinates of the device are almost unchanged.
  • the device has a starting voltage of 3.0 volts and a maximum brightness of the device of 81096 cd/m 2 .
  • the device has a maximum current efficiency of 80.06 cd/A and a maximum power efficiency of 83.80 lm/W.
  • the ITO anode layer on the ITO glass was first laser etched into strip electrodes, which were then ultrasonically cleaned with cleaning solution and deionized water for 15 min and placed in an oven for drying. Next, the dried substrate was placed in a pretreatment vacuum chamber, and the ITO anode was subjected to low pressure plasma treatment for 3 minutes under a vacuum of 10 Pa in an atmosphere of 400 V, and then transferred to an organic vapor deposition chamber. In an organic vapor deposition chamber having a degree of vacuum of 1 to 2 ⁇ 10 -5 Pa, a 5 nm-thick MoO 3 anode modification layer 3 and a 30 nm-thick TAPC hole-transport-electron barrier layer 4, 15 nm were sequentially deposited on the ITO layer.
  • the unfinished device was transferred to a metal deposition chamber, and a 1.1 nm thick LiF cathode modification layer 8 was evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa, and finally passed through a special mask on the LiF layer.
  • a 250 nm thick metal Al cathode layer 9 was deposited to prepare a structure of ITO/MoO 3 /TAPC/Ir(BT) 2 (acac) (2%): mCP/Tb(acac) 3 (0.1%): Ir (BT) 2 (acac) (2%): an organic electroluminescent device of 26DCzPPy/3TPYMB/LiF/Al.
  • the evaporation rate of MoO 3 in the anode modification layer 3 is controlled at 0.02 nm/s
  • the evaporation rate of TAPC in the hole transport-electron blocking layer 4 is controlled at 0.06 nm/s
  • the hole dominates the Ir(BT) 2 in the light-emitting layer 5
  • the evaporation rates of acac) and mCP are controlled at 0.002 nm/s and 0.1 nm/s, respectively.
  • the evaporation rates of Tb(acac) 3 , Ir(BT) 2 (acac) and 26DCzPPy in the electron-dominated luminescent layer 6 are controlled at 0.0001 nm, respectively.
  • the evaporation rate of 3TPYMB in the hole blocking-electron transport layer 7 is controlled at 0.08 nm/s
  • the evaporation rate of LiF in the cathode modified layer 8 is controlled at 0.02 nm/s
  • metal The evaporation rate of Al in the cathode layer 9 was controlled at 0.9 nm/s.
  • the performance of the yellow organic electroluminescent device prepared in this example was tested.
  • the experimental results show that the device emits yellow light at about 563 nm under the driving of a direct current power source.
  • the brightness is 20000 cd/m 2
  • the color coordinates of the device are (0.446, 0.538); as the operating voltage changes, the color coordinates of the device are almost unchanged.
  • the device has a starting voltage of 3.1 volts and a maximum brightness of the device of 80119 cd/m 2 .
  • the device has a maximum current efficiency of 82.36 cd/A and a maximum power efficiency of 83.42 lm/W.
  • the ITO anode layer on the ITO glass was first laser etched into strip electrodes, which were then ultrasonically cleaned with cleaning solution and deionized water for 15 min and placed in an oven for drying. Next, the dried substrate was placed in a pretreatment vacuum chamber, and the ITO anode was subjected to low pressure plasma treatment for 3 minutes under a vacuum of 10 Pa in an atmosphere of 400 V, and then transferred to an organic vapor deposition chamber. In an organic vapor deposition chamber having a degree of vacuum of 1 to 2 ⁇ 10 -5 Pa, a 6 nm-thick MoO 3 anode modification layer 3 and a 50 nm-thick TAPC hole-transport-electron barrier layer 4, 12 nm are sequentially deposited on the ITO layer.
  • the unfinished device was transferred to a metal deposition chamber, and a 1.1 nm thick LiF cathode modification layer 8 was evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa, and finally passed through a special mask on the LiF layer.
  • a 240 nm thick metal Al cathode layer 9 was deposited to prepare a structure of ITO/MoO 3 /TAPC/Ir(DMP) 3 (3%): TCP/Tb(acac) 3 phen(0.3%): Ir(DMP) 3 (3%): Organic electroluminescent device of UGH2/BmPyPhB/LiF/Al.
  • the evaporation rate of MoO 3 in the anode modification layer 3 is controlled at 0.01 nm/s
  • the evaporation rate of TAPC in the hole transport-electron blocking layer 4 is controlled at 0.08 nm/s
  • the evaporation rate of TCP is controlled at 0.003 nm/s and 0.1 nm/s, respectively.
  • the evaporation rates of Tb(acac) 3 phen, Ir(DMP) 3 and UGH2 in the electron-dominated luminescent layer 6 are controlled at 0.0003 nm/s and 0.003 nm, respectively.
  • the evaporation rate of BmPyPhB in the hole blocking-electron transport layer 7 is controlled at 0.09 nm/s
  • the evaporation rate of LiF in the cathode modified layer 8 is controlled at 0.02 nm/s
  • Al in the metal cathode layer 9 The evaporation rate was controlled at 1.2 nm/s.
  • the performance of the yellow organic electroluminescent device prepared in this example was tested.
  • the experimental results show that the device emits yellow light at about 563 nm under the driving of a direct current power source.
  • the brightness is 20000 cd/m 2
  • the color coordinates of the device are (0.442, 0.539); as the operating voltage changes, the color coordinates of the device are almost unchanged.
  • the device has a light-emitting voltage of 3.0 volts and a maximum brightness of the device of 78463 cd/m 2 .
  • the device has a maximum current efficiency of 79.78 cd/A and a maximum power efficiency of 83.50 lm/W.
  • the ITO anode layer on the ITO glass was first laser etched into strip electrodes, which were then ultrasonically cleaned with cleaning solution and deionized water for 15 min and placed in an oven for drying. Next, the dried substrate was placed in a pretreatment vacuum chamber, and the ITO anode was subjected to low pressure plasma treatment for 3 minutes under a vacuum of 10 Pa in an atmosphere of 400 V, and then transferred to an organic vapor deposition chamber. In an organic vapor deposition chamber having a degree of vacuum of 1 to 2 ⁇ 10 -5 Pa, a 3 nm-thick MoO 3 anode modification layer 3 and a 40 nm-thick TAPC hole-transport-electron barrier layer 4, 10 nm are sequentially deposited on the ITO layer.
  • Thick fac-Ir(ppy) 2 Pc-doped BSB hole-dominated luminescent layer 5 10 nm thick Tb(acac) 3 phen and fac-Ir(ppy) 2 Pc co-doped BCBP electron-dominated luminescent layer 6 and 40 nm thick TPBi hole blocking-electron transport layer 7.
  • the unfinished device was transferred to a metal deposition chamber, and a 1.0 nm thick LiF cathode modification layer 8 was evaporated in a vacuum atmosphere of 4 to 6 ⁇ 10 -5 Pa, and finally passed through a special mask on the LiF layer.
  • a 120 nm thick metal Al cathode layer 9 was deposited to prepare a structure of ITO/MoO 3 /TAPC/fac-Ir(ppy) 2 Pc (2.5%): BSB/Tb(acac) 3 phen (0.3%): fac- Ir(ppy) 2 Pc (2.5%): an organic electroluminescent device of BCBP/TPBi/LiF/Al.
  • the evaporation rate of MoO 3 in the anode modification layer 3 is controlled at 0.06 nm/s
  • the evaporation rate of TAPC in the hole transport-electron blocking layer 4 is controlled at 0.08 nm/s, and the hole dominates the fac-Ir (ppy) in the light-emitting layer 5.
  • the evaporation rates of Pc and BSB are controlled at 0.0025 nm/s and 0.1 nm/s, respectively.
  • the evaporation rates of Tb(acac) 3 phen, fac-Ir(ppy) 2 Pc and BCBP in electron-dominated luminescent layer 6 are controlled at 0.0025, respectively.
  • the evaporation rate of TPBi in the hole blocking-electron transport layer 7 is controlled at 0.08 nm/s
  • the evaporation rate of LiF in the cathode modified layer 8 is controlled at 0.02 nm/s.
  • the evaporation rate of Al in the metal cathode layer 9 was controlled at 1.5 nm/s.
  • the performance of the yellow organic electroluminescent device prepared in this example was tested.
  • the experimental results show that the device emits yellow light at about 563 nm under the driving of a DC power source.
  • the brightness is 20000 cd/m 2
  • the color coordinates of the device are (0.447, 0.535); as the operating voltage changes, the color coordinates of the device are almost unchanged.
  • the device has a starting voltage of 3.0 volts and a maximum brightness of the device of 76,598 cd/m 2 .
  • the device has a maximum current efficiency of 79.61 cd/A and a maximum power efficiency of 83.33 lm/W.

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Abstract

一种黄色有机电致发光器件，其由衬底（1）、阳极层（2）、阳极修饰层（3）、空穴传输-电子阻挡层（4）、空穴主导发光层（5）、电子主导发光层（6）、空穴阻挡-电子传输层（7）、阴极修饰层（8）与阴极层（9）依次设置而成；其中所述电子主导发光层（6）由有机敏化材料、黄色有机发光材料与电子型有机主体材料组成。通过选择能级能量匹配的稀土配合物，例如Tb(acac) 3或者Tb(acac) 3phen作为有机敏化材料，将其微量掺入电子主导发光层（6）中，起到载流子深束缚中心及能量传递阶梯的作用，从而提高器件的发光效率、提高器件的光谱稳定性、降低器件的工作电压、延缓器件的效率衰减以及提高器件的工作寿命。

Description

一种黄色有机电致发光器件及其制备方法
本申请要求于2014年10月30日提交中国专利局、申请号为201410605666.X、发明名称为“一种黄色有机电致发光器件及其制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及有机电致发光技术领域，尤其涉及一种黄色有机电致发光器件及其制备方法。
背景技术
有机电致发光器件是一种自发光器件，其发光原理是：当电荷被注入到空穴注入电极和电子注入电极之间的有机层时，电子和空穴相遇、结合并随后湮灭，因而产生光。有机电致发光器件具有低电压、高亮度、宽视角等特性，因此有机电致发光器件近年来得到了迅猛的发展。其中，黄色有机电致发光器件由于在单色显示、白光调制等方面具有广阔的应用前景，因此成为研究的热点。
一直以来，三价铱配合物由于具有发光效率高和发光颜色可调等优点而被学术界和产业界视为理想的有机电致发光材料。国内外的许多研究团队从材料合成和器件优化方面着手，欲提高黄色有机电致发光器件的综合性能，以满足产业化的需要。例如，2009年，中国科学院长春应用化学研究所的马东阁等人选择高效率的铱配合物(fbi)2Ir(acac)作为黄光染料，将其掺入优选的主体材料中制备了多层结构的黄色有机电致发光器件。该器件具有较高的最大发光效率和最大亮度，然而器件的发光效率随着电流密度的提高迅速地衰减；另外，复杂的器件结构不但导致器件的制作成本较高，而且不利于降低器件的工作电压。
为了解决上述问题，2010年，香港大学支志明等人合成一系列黄色铂配合物作为发光材料，设计并优化器件结构，获得了具有纯正黄色发射的有机电致发光器件。该器件的效率衰减得到一定缓解，然而器件仍然存在工作电压较高、亮度较低的问题。由此可见，黄色有机电致发光器件的 发光效率、亮度、光谱稳定性和工作寿命等综合性能仍然没有得到有效改善。
发明内容
本发明解决的技术问题在于提供一种综合性能较高的黄色有机电致发光器件及其制备方法。
有鉴于此，本申请提供了一种黄色有机电致发光器件，包括：
衬底；
复合于所述衬底上的阳极层；
复合于所述阳极层上的阳极修饰层；
复合于所述阳极修饰层上的空穴传输-电子阻挡层；
复合于所述空穴传输-电子阻挡层上的空穴主导发光层；
复合于所述空穴主导发光层上的电子主导发光层；
复合于所述电子主导发光层上的空穴阻挡-电子传输层；
复合于所述空穴阻挡-电子传输层上的阴极修饰层；
复合于所述阴极修饰层上的阴极层；
所述电子主导发光层由有机敏化材料、黄色有机发光材料与电子型有机主体材料组成；
所述有机敏化材料选自三(乙酰丙酮)合铽和三(乙酰丙酮)林菲罗啉合铽中的一种或两种；
所述有机敏化材料为所述电子型有机主体材料的0.1wt％～0.5wt％。
优选的，所述黄色有机发光材料的含量为所述电子型有机主体材料的1.0wt％～3.0wt％。
优选的，所述黄色有机发光材料选自双(2-(9,9-二乙基-芴-2-基)-1-苯基-1H-苯并[d]咪唑)乙酰丙酮合铱、双(2-苯基苯并噻唑)(乙酰丙酮)合铱、三[3-(2,6-二甲基苯酚基)-6-苯基哒嗪]合铱和双(2-苯基吡啶)(3-(吡啶-2-基)-2H-苯并吡喃-2-酮)合铱中的一种或多种。
优选的，所述电子型有机主体材料选自2,6-二[3-(9H-9-咔唑基)苯基]吡啶、1,4-双(三苯基硅烷基)苯、2,2’-双(4-(9-咔唑基)苯基)联苯、三 [2,4,6-三甲基-3-(3-吡啶基)苯基]硼烷、1，3，5-三[(3-吡啶)-3-苯基]苯、1,3-双[3,5-二(3-吡啶基)苯基]苯、1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯、9-(4-特丁基苯基)-3,6-双(三苯基硅基)-9H-咔唑和9-(8-二苯基磷酰基)-二苯唑[b,d]呋喃-9H-咔唑中的一种或多种。
优选的，所述空穴主导发光层由黄色有机发光材料和空穴型有机主体材料组成；所述黄色有机发光材料为所述空穴型有机主体材料的1.0wt％～3.0wt％；
所述黄色有机发光材料选自双(2-(9,9-二乙基-芴-2-基)-1-苯基-1H-苯并[d]咪唑)乙酰丙酮合铱、双(2-苯基苯并噻唑)(乙酰丙酮)合铱、三[3-(2,6-二甲基苯酚基)-6-苯基哒嗪]合铱和双(2-苯基吡啶)(3-(吡啶-2-基)-2H-苯并吡喃-2-酮)合铱中的一种或多种；
所述空穴型有机主体材料选自4，4’-N，N’-二咔唑二苯基、1,3-二咔唑-9-基苯、9,9'-(5-(三苯基硅烷基)-1,3-苯基)二-9H-咔唑、1,3,5-三(9-咔唑基)苯、4,4',4″-三(咔唑-9-基)三苯胺和1,4-双(三苯基硅烷基)联苯中的一种或多种。
优选的，所述空穴传输-电子阻挡层的材料选自4,4'-环己基二[N,N-二(4-甲基苯基)苯胺]、二吡嗪[2，3-f:2’,3’-h]喹喔啉-2，3，6，7，10，11-六腈基、N4,N4'-二(萘-1-基)-N4,N4'-双(4-乙烯基苯基)联苯-4,4'-二胺、N,N'-双(3-甲基苯基)-N,N'-双(苯基)-2，7-二胺-9，9-螺双芴、N,N,N',N'-四-(3-甲基苯基)-3-3’-二甲基对二氨基联苯、2,2'-二(3-(N,N-二-对甲苯氨基)苯基)联苯、N,N'-二(萘-2-基)-N,N'-二(苯基)二氨基联苯、N,N'-二(萘-1基)-N,N'–二苯基-2，7-二氨基-9，9-螺双芴、N,N'-二(3-甲基苯基)-N,N'-二苯基-2,7-二氨基-9，9-二甲基芴、N,N'-二(萘-1-基)-N,N'-二苯基-2，7-二氨基-9，9-二甲基芴、N,N'–二(3-甲基苯基)-N,N'–二苯基-2，7-二氨基-9，9-二苯基芴、N,N'-二(萘-1-基)-N,N'-二苯基-2,7-二氨基-9,9-二苯基芴、N,N'-二(萘-1-基)-N,N'-二苯基-2,2’-二甲基二氨基联苯、2,2',7,7'-四(N,N-二苯基氨基)-2,7-二氨基-9,9-螺双芴、9,9-二[4-(N,N–二萘-2-基-氨基)苯基]-9H-芴、9，9-[4-(N-萘-1基-N-苯胺)-苯基]-9H-芴、2，2’-二[N,N-二(4-苯基)氨基]-9,9-螺双芴、2,2’-双(N,N- 苯氨基)-9,9-螺双芴、N,N’-二苯基-N,N’-(1-萘基)-1，1’-联苯-4，4’-二胺和4，4’-二[N-(对-甲苯基)-N-苯基-氨基]二苯基中的一种或多种。
优选的，所述空穴阻挡-电子传输层的材料选自三[2,4,6-三甲基-3-(3-吡啶基)苯基]硼烷、1，3，5-三[(3-吡啶)-3-苯基]苯、1,3-双[3,5-二(3-吡啶基)苯基]苯和1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯中的一种或多种。
优选的，所述阳极修饰层的厚度为1～10nm，所述空穴传输-电子阻挡层的厚度为30～60nm，所述空穴主导发光层的厚度为5～20nm，所述电子主导发光层的厚度为5～20nm，所述空穴阻挡-电子传输层的厚度为30～60nm，所述阴极修饰层的厚度为0.8～1.2nm，所述阴极层的厚度为90～300nm。
本申请还提供了一种黄色有机电致发光器件的制备方法，包括：
将衬底上的阳极层进行刻蚀，烘干后在所述阳极层上依次蒸镀阳极修饰层、空穴传输-电子阻挡层、空穴主导发光层、电子主导发光层、空穴阻挡-电子传输层、阴极修饰层与阴极层；
所述电子主导发光层由有机敏化材料、黄色有机发光材料与电子型有机主体材料组成；
所述有机敏化材料选自三(乙酰丙酮)合铽和三(乙酰丙酮)林菲罗啉合铽中的一种或两种；
所述有机敏化材料为所述电子型有机主体材料的0.1wt％～0.5wt％。
优选的，所述阳极修饰层的蒸发速率为0.01～0.05nm/s，所述空穴传输-电子阻挡层、空穴主导发光层、电子主导发光层与空穴阻挡-电子传输层中主体材料的蒸发速率为0.05～0.1nm/s，所述电子主导发光层中的有机敏化材料的蒸发速率为0.00005～0.0005nm/s，所述电子主导发光层与空穴主导发光层中的黄色发光材料的蒸发速率为0.0005～0.003nm/s，所述阴极修饰层的蒸发速率为0.005～0.05nm/s，所述阴极层的蒸发速率为0.5～2.0nm/s。
本申请提供了一种黄色有机电致发光器件，其包括衬底、阳极层、阳极修饰层、空穴传输-电子阻挡层、空穴主导发光层、电子主导发光层、空穴阻挡-电子传输层、阴极修饰层与阴极层。本申请的发光材料为黄色 发光材料，当电子和空穴分别注入到发光层时，电子和空穴会相遇并发生复合，进而产生一个激子，激子会把能量传递给发光层中的黄色发光材料的分子，激发一个电子到激发态，激发态的电子通过辐射跃迁的方式回到基态时会产生一个黄色的光子，从而使有机电致发光器件发黄光。
本申请通过在电子主导发光层中加入三(乙酰丙酮)合铽和三(乙酰丙酮)林菲罗啉合铽中的一种或两种作为有机敏化材料，使其能级及三重态能量与主体材料、发光材料的能级及三重态能量相匹配，使有机敏化材料在电致发光过程中起到载流子深束缚中心及能量传递阶梯的作用，不仅能够提高从主体材料到发光材料的能量传递，也可平衡电子和空穴在发光区间的分布，从而提高有机电致发光器件的发光效率、提高器件的光谱稳定性、降低器件的工作电压、延缓器件的效率衰减、提高器件的工作寿命。
附图说明
图1为本发明黄色有机电致发光器件的结构示意图；
图2为本发明实施例1制备的黄色有机电致发光器件的电压-电流密度-亮度特性曲线图；
图3为本发明实施例1制备的黄色有机电致发光器件的电流密度-功率效率-电流效率特性曲线图；
图4为本发明实施例1制备的黄色有机电致发光器件在亮度为20000cd/m2时的光谱图。
具体实施方式
为了进一步理解本发明，下面结合实施例对本发明优选实施方案进行描述，但是应当理解，这些描述只是为进一步说明本发明的特征和优点，而不是对本发明权利要求的限制。
本发明实施例公开了一种黄色有机电致发光器件，包括：
衬底；
复合于所述衬底上的阳极层；
复合于所述阳极层上的阳极修饰层；
复合于所述阳极修饰层上的空穴传输-电子阻挡层；
复合于所述空穴传输层-电子阻挡上的空穴主导发光层；
复合于所述空穴主导发光层上的电子主导发光层；
复合于所述电子主导发光层上的空穴阻挡-电子传输层；
复合于所述空穴阻挡-电子传输层上的阴极修饰层；
复合于所述阴极修饰层上阴极层；
所述电子主导发光层由有机敏化材料、黄色有机发光材料与电子型有机主体材料组成；
所述有机敏化材料选自三(乙酰丙酮)合铽和三(乙酰丙酮)林菲罗啉合铽中的一种或两种；
所述有机敏化材料为所述电子型有机主体材料的0.1wt％～0.5wt％。
有机电致发光器件(OLED)的发光原理是在外界电压的驱动下，由电极注入的电子和空穴在有机物中相遇，并将能量传递给有机发光分子，使其受到激发，从基态跃迁到激发态，当受激发分子从激发态回到基态时辐射跃迁而产生发光的现象。本申请提供了一种黄色有机电致发光器件，其发黄光是由于所采用的发光材料是黄色发光材料，当电子和空穴分别注入到发光层时，电子和空穴会相遇并发生复合，进而产生一个激子，激子把能量传递给发光层中的黄色发光材料的分子，激发一个电子到激发态，激发态的电子通过跃迁的方式回到基态时会产生一个黄色的光子，从而实现有机电致发光器件发黄光。
本申请所述黄色有机电致发光器件由衬底、阳极层、阳极修饰层、空穴传输-电子阻挡层、空穴主导发光层、电子主导发光层、空穴阻挡-电子传输层、阴极修饰层与阴极层依次连接设置。其中空穴主导发光层与电子主导发光层是黄色有机电子发光器件的发光层。
本发明的电子主导发光层由有机敏化材料、黄色有机发光材料与电子型有机主体材料组成，其中有机敏化材料在电致发光过程中起到敏化的作用，以提高从主体材料到发光材料的能量传递并平衡电子和空穴在发光区间的分布；黄色有机发光材料的分子分散在电子主导发光层中作为发光中心；电子型有机主体材料起到基质的作用，提供电子传输能力。在电子主 导发光层中，所述有机敏化材料的能级及三重态能量需要与主体材料、发光材料的能级及三重态能量相匹配，才能平衡电子和空穴在发光区间的分布并加速从主体材料到发光材料的能量传递，使黄色有机电致发光器件具有较好的综合性能。因此，本申请通过对发光材料的选取，所述有机敏化材料选择了稀土配合物，所述有机敏化材料选自具有式(Ⅸ)结构的三(乙酰丙酮)合铽(Tb(acac)3)和具有式(Ⅹ)结构的三(乙酰丙酮)林菲罗啉合铽(Tb(acac)3phen)中的一种或两种；
Figure PCTCN2014091783-appb-000001
本发明中所述有机敏化材料在所述电子主导发光层中的掺杂浓度对有机电致发光器件的性能造成影响。若所述有机敏化材料的掺杂浓度过低则会导致敏化效果不理想，若掺杂浓度过高则会降低有机电致发光器件的综合性能。因此，所述有机敏化材料为所述电子型有机主体材料的0.1wt％～0.5wt％，优选为0.2wt％～0.3wt％。
按照本发明，所述电子主导发光层中所述黄色有机发光材料为本领域技术人员熟知的发光材料，本申请没有特别的限制，但是为了使发光效果更好，所述黄色有机发光材料优先选自具有式(Ⅱ1)结构的双(2-(9,9-二乙基-芴-2-基)-1-苯基-1H-苯并[d]咪唑)乙酰丙酮合铱((fbi)2Ir(acac))、具有式(Ⅱ2)结构的双(2-苯基苯并噻唑)(乙酰丙酮)合铱(Ir(BT)2(acac))、的具有式(Ⅱ3)结构的三[3-(2,6-二甲基苯酚基)-6-苯基哒嗪]合铱(Ir(DMP)3)和具有式(Ⅱ4)结构的双(2-苯基吡啶)(3-(吡啶-2-基) -2H-苯并吡喃-2-酮)合铱(fac-Ir(ppy)2Pc)中的一种或多种；
Figure PCTCN2014091783-appb-000002
在电子主导发光层中，所述黄色有机发光材料的掺杂浓度也会影响黄色有机电致发光器件的综合性能。若所述黄色有机发光材料的掺杂浓度过低，则会导致器件效率偏低、色纯度不理想，掺杂浓度过高则会导致发光材料分子团聚，形成淬灭分子，最终降低器件的综合性能。因此，所述电子主导发光层中所述黄色有机发光材料优选为所述电子型有机主体材料的1.0wt％～3.0wt％，更优选为1.5wt％～2.5wt％。所述电子型主体材料在电子主导发光层中起到基质的作用，提供电子传输能力，所述电子型主体材料为本领域技术人员熟知的材料，作为优选方案，所述电子型主体材料优先选自具有式(XI)结构的2,6-二[3-(9H-9-咔唑基)苯基]吡啶(26DCzPPy)、具有式(XII)结构的1,4-双(三苯基硅烷基)苯(UGH2)、具有式(XIII)结构的2,2’-双(4-(9-咔唑基)苯基)联苯(BCBP)、具 有式(XIV)结构的[2,4,6-三甲基-3-(3-吡啶基)苯基]硼烷(3TPYMB)、具有式(XV)结构的1，3，5-三[(3-吡啶)-3-苯基]苯(TmPyPB)、具有式(XVI)结构的1,3-双[3,5-二(3-吡啶基)苯基]苯(BmPyPhB)、具有式(XVII)结构的1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯(TPBi)、具有式(XVIII)结构的9-(4-特丁基苯基)-3,6-双(三苯基硅基)-9H-咔唑(CzSi)和具有式(XIX)结构的9-(8-二苯基磷酰基)-二苯唑[b,d]呋喃-9H-咔唑(DFCzPO)中的一种或多种；
Figure PCTCN2014091783-appb-000003
Figure PCTCN2014091783-appb-000004
本申请中所述空穴主导发光层由黄色有机发光材料和空穴型有机主体材料组成，其中黄色有机发光材料的分子分散在空穴主导发光层中作为发光中心。所述黄色有机发光材料在所述空穴主导发光层中优选为所述空穴型有机主体材料的1.0wt％～3.0wt％，更优选为1.5wt％～2.5wt％；所述黄色有机发光材料的掺杂浓度过低，则会导致器件效率偏低、色纯度不理想，掺杂浓度过高则会导致发光材料分子团聚，形成淬灭分子，最终降低器件的综合性能。所述空穴型主体材料起到基质的作用，提供空穴传输能力。本申请中所述空穴主导发光层中所述黄色有机发光材料优先选自具有式(Ⅱ1)结构的双(2-(9,9-二乙基-芴-2-基)-1-苯基-1H-苯并[d]咪唑)乙酰丙酮合铱((fbi)2Ir(acac))、具有式(Ⅱ2)结构的双(2-苯基苯并噻唑)(乙酰丙酮)合铱(Ir(BT)2(acac))、的具有式(Ⅱ3)结构的三[3-(2,6-二甲基苯酚基)-6-苯基哒嗪]合铱(Ir(DMP)3)和具有式(Ⅱ4)结构的双(2-苯基吡啶)(3-(吡啶-2-基)-2H-苯并吡喃-2-酮)合铱(fac-Ir(ppy)2Pc)中的一种或多种；
所述空穴型有机主体材料优先选自具有式(III)结构的4，4’–N，N’–二咔唑二苯基(CBP)、具有式(IV)结构的1,3-二咔唑-9-基苯(mCP)、具有式(V)结构的9,9'-(5-(三苯基硅烷基)-1,3-苯基)二-9H-咔唑(SimCP)、具有式(VI)结构的1,3,5-三(9-咔唑基)苯(TCP)、具有式(VII)结构的 4,4',4″-三(咔唑-9-基)三苯胺(TcTa)和具有式(VIII)结构的1,4-双(三苯基硅烷基)联苯(BSB)中的一种或多种；
Figure PCTCN2014091783-appb-000005
Figure PCTCN2014091783-appb-000006
按照本发明，所述黄色有机电致发光器件中，所述衬底可以为玻璃衬底、石英衬底、多晶硅衬底、单晶硅衬底或石墨烯薄膜衬底，本申请没有特别的限制。所述阳极层优先选自铟锡氧化物(ITO)，其面阻优选为5～25Ω。所述阳极修饰层能够降低驱动电压，加速空穴的注入，所述阳极修饰层优选采用氧化钼(MoO3)。
本申请中所述空穴传输-电子阻挡层的作用是传输空穴并阻挡电子。所述空穴传输-电子阻挡层层的材料优先选自具有式(Ⅰ1)结构的4,4'-环己基二[N,N–二(4-甲基苯基)苯胺](TAPC)、具有式(Ⅰ2)结构的二吡嗪[2，3-f:2’,3’-h]喹喔啉-2，3，6，7，10，11-六腈基(HAT-CN)、具有式(Ⅰ3)结构的N4,N4'-二(萘-1-基)-N4,N4'-双(4-乙烯基苯基)联苯-4,4'-二胺(VNPB)、具有式(Ⅰ4)结构的N,N'-双(3-甲基苯基)-N,N'-双(苯基)-2，7-二胺-9，9-螺双芴(Spiro-TPD)、具有式(Ⅰ5)结构的N,N,N',N'-四-(3-甲基苯基)-3-3’-二甲基对二氨基联苯(HMTPD)、具有式(Ⅰ6)结构的2,2'-二(3-(N,N-二-对甲苯氨基)苯基)联苯(3DTAPBP)、具有式(Ⅰ7)结构的N,N'-二(萘-2-基)-N,N'-二(苯基)二氨基联苯(β-NPB)、具有式(Ⅰ8)结构的N,N'-二(萘-1基)-N,N'-二苯基-2，7-二氨基-9，9-螺双芴(Spiro-NPB)、具有式(Ⅰ9)结构的N,N'-二(3-甲 基苯基)-N,N'-二苯基-2,7-二氨基-9，9-二甲基芴(DMFL-TPD)、具有式(Ⅰ10)结构的N,N'-二(萘-1-基)-N,N'-二苯基-2，7-二氨基-9，9-二甲基芴(DMFL-NPB)、具有式(Ⅰ11)结构的N,N'-二(3-甲基苯基)-N,N'-二苯基-2，7-二氨基-9，9-二苯基芴(DPFL-TPD)、具有式(Ⅰ12)结构的N,N'-二(萘-1-基)-N,N'-二苯基-2,7-二氨基-9,9-二苯基芴(DPFL-NPB)、具有式(Ⅰ13)结构的N,N'-二(萘-1-基)-N,N'-二苯基-2,2’-二甲基二氨基联苯(α-NPD)、具有式(Ⅰ14)结构的2,2',7,7'-四(N,N-二苯基氨基)-2,7-二氨基-9,9-螺双芴(Spiro-TAD)、具有式(Ⅰ15)结构的9,9-二[4-(N,N–二萘-2-基-氨基)苯基]-9H-芴(NPAPF)、具有式(Ⅰ16)结构的9，9-[4-(N-萘-1基-N-苯胺)-苯基]-9H-芴(NPBAPF)、具有式(Ⅰ17)结构的2，2’-二[N,N-二(4-苯基)氨基]-9,9-螺双芴(2,2'-Spiro-DBP)、具有式(Ⅰ18)结构的2,2’-双(N,N-苯氨基)-9,9-螺双芴(Spiro-BPA)、具有式(Ⅰ19)结构的N,N’-二苯基-N,N’-(1-萘基)-1，1’-联苯-4，4’-二胺(NPB)和具有式(Ⅰ20)结构的4，4’-二[N-(对-甲苯基)-N-苯基-氨基]二苯基(TPD)中的一种或多种；
Figure PCTCN2014091783-appb-000007
Figure PCTCN2014091783-appb-000008
Figure PCTCN2014091783-appb-000009
按照本发明所述空穴阻挡-电子传输层的作用是阻挡空穴并传输电子，促进电子的注入。所述空穴阻挡-电子传输层的材料优先选自具有式(XIV)结构的三[2,4,6-三甲基-3-(3-吡啶基)苯基]硼烷(3TPYMB)、具有式(XV)结构的1，3，5-三[(3-吡啶)-3-苯基]苯(TmPyMB)、具有式(XVI)结构的1,3-双[3,5-二(3-吡啶基)苯基]苯(BmPyPhB)和具有式(XVII)结构的1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯(TPBi)中的一种或多种；
Figure PCTCN2014091783-appb-000010
Figure PCTCN2014091783-appb-000011
本申请中所述阴极修饰层的作用是降低驱动电压，加速电子的注入，所述阴极修饰层优选为氟化锂。所述阴极层优选为铝。
本申请对所述空穴传输-电子阻挡层的材料、黄色有机发光材料、空穴型有机主体材料、有机敏化材料、电子型有机主体材料以及空穴阻挡-电子传输层的材料的来源均没有特别的限制，按照本领域技术人员熟知的方式制备即可得到。
本申请中所述阳极层与所述阴极层相互交叉形成器件的发光区，本申请所述黄色有机电致发光器件中每层的厚度对所述器件的影响也是很大的，若厚度偏低则会导致器件效率衰减加快，若厚度偏高则会导致器件工作电压高，寿命低。因此所述阳极修饰层的厚度优选为1～10nm，空穴传输-电子阻挡层的厚度优选为30～60nm，空穴主导发光层的厚度优选为5～20nm，电子主导发光层的厚度优选为5～20nm，空穴阻挡-电子传输层的厚度优选为30～60nm，阴极修饰层的厚度优选为0.8～1.2nm，阴极层的厚度优选为90～300nm。
本申请还提供了所述黄色有机电致发光器件的制备方法，包括：
将衬底上的阳极层进行刻蚀，烘干后在所述阳极层上依次蒸镀阳极修饰层、空穴传输-电子阻挡层、空穴主导发光层、电子主导发光层、空穴阻挡-电子传输层、阴极修饰层与阴极层；
所述空穴主导发光层由黄色有机发光材料与空穴型有机主体材料组成；
所述电子主导发光层由有机敏化材料、黄色有机发光材料与电子型有机主体材料组成；
所述有机敏化材料选自三(乙酰丙酮)合铽和三(乙酰丙酮)林菲罗啉合铽中的一种或两种；
所述有机敏化材料为所述电子型有机主体材料的0.1wt％～0.5wt％；
Figure PCTCN2014091783-appb-000012
按照本发明，所述黄色有机电致发光器件的制备方法具体为：
先将衬底上的阳极层激光刻蚀成条状的电极，然后依次用清洗液、去离子水超声清洗10～20min并放入烘箱烘干；
将烘干后的衬底放入预处理真空室，在真空度为8～15Pa的氛围下用350～500V的电压对其进行1～10min的低压等离子处理后把它转移到有机蒸镀室；
待真空度达到1～2×10-5Pa时，依次在阳极层上蒸镀阳极修饰层、空穴传输-电子阻挡层、空穴主导发光层、电子主导发光层、空穴阻挡-电子传输层；未完成的器件被转移到金属蒸镀室，在4～6×10-5Pa的真空氛围下依次蒸镀阴极修饰层和金属阴极层。
在制备黄色有机电致发光器件的过程中，本申请通过控制蒸发速率实现材料的沉积。按照本发明，所述阳极修饰层蒸发速率控制在0.01～0.05nm/s，空穴传输-电子阻挡层、空穴主导发光层、电子主导发光层、空穴阻挡-电子传输层中主体材料的蒸发速率控制在0.05～0.1nm/s，有机敏化材料的蒸发速率控制在0.00005～0.0005nm/s，黄色有机发光材料的蒸发速率控制在0.0005～0.003nm/s，阴极修饰层的蒸发速率控制在0.005～0.015 nm/s，金属阴极层蒸发速率控制在0.5～2.0nm/s。其中蒸镀空穴主导发光层时，其中黄色有机发光材料、空穴型有机主体材料在不同的蒸发源中同时蒸发，通过调控两种材料的蒸发速率使得掺杂的黄色有机发光材料和空穴型有机主体材料的重量比控制在1.0％～3.0％之间；蒸镀电子主导发光层时，其中有机敏化材料、黄色有机发光材料、电子型有机主体材料在不同的蒸发源中同时蒸发，通过调控三种材料的蒸发速率使得掺杂的有机敏化材料和电子型有机主体材料的质量比控制在0.1％～0.5％之间，使得掺杂的黄色有机发光材料和电子型有机主体材料的质量比控制在1.0％～3.0％之间。
本申请提供了一种黄色有机电致发光器件，所述黄色有机电致发光器件中的电子主导发光层中选择具有匹配的能级分布的稀土配合物，例如Tb(acac)3或者Tb(acac)3phen作为有机敏化材料，其起到电子深束缚中心的作用，有利于平衡载流子的分布、拓宽器件的发光区间，从而提高器件的发光效率、降低器件的工作电压、延缓器件的效率衰减、提高器件的工作寿命；并且，所述有机敏化材料具有匹配的三重态能量，起到能量传递阶梯的作用，能够加速从主体材料到发光材料的能量传递，缓解发光材料载流子俘获能力不足导致的主体材料发光问题，从而提高器件的光谱稳定性、降低器件性能对发光材料掺杂浓度的依赖。
为了进一步理解本发明，下面结合实施例对本发明提供的有机电致发光器件及其制备方法进行详细说明，本发明的保护范围不受以下实施例的限制。
如图1所示，图1为本发明黄色有机电致发光器件的结构示意图，其中1为玻璃衬底，2为阳极层，3为阳极修饰层，4为空穴传输-电子阻挡层，5为空穴主导发光层，6为电子主导发光层，7为空穴阻挡-电子传输层，8为阴极修饰层，9为金属阴极层。
实施例1
先将ITO玻璃上的ITO阳极层激光刻蚀成条状电极，然后依次用清洗液、去离子水超声清洗15min并放入烘箱烘干。接着将烘干后的衬底放入预处理真空室，在真空度为10Pa的氛围下用400V的电压对ITO阳 极进行3min的低压等离子处理后将其转移到有机蒸镀室。在真空度为1～2×10-5Pa的有机蒸镀室中，在ITO层上依次蒸镀3nm厚的MoO3阳极修饰层3、40nm厚的TAPC空穴传输-电子阻挡层4、10nm厚(fbi)2Ir(acac)掺杂TcTa的空穴主导发光层5、10nm厚Tb(acac)3phen与(fbi)2Ir(acac)共掺杂CzSi的电子主导发光层6和40nm厚的TmPyPB空穴阻挡-电子传输层7。接下来，未完成的器件被转移到金属蒸镀室，在4～6×10-5Pa的真空氛围下蒸镀1.0nm厚的LiF阴极修饰层8，最后通过特制的掩模版在LiF层上蒸镀120nm厚的金属Al阴极层9，制备成结构为ITO/MoO3/TAPC/(fbi)2Ir(acac)(2％)：TcTa/Tb(acac)3phen(0.2％)：(fbi)2Ir(acac)(2％)：CzSi/TmPyPB/LiF/Al的有机电致发光器件。阳极修饰层3中MoO3的蒸发速率控制在0.01nm/s，空穴传输-电子阻挡层4中TAPC的蒸发速率控制在0.05nm/s，空穴主导发光层5中(fbi)2Ir(acac)和TcTa的蒸发速率分别控制在0.001nm/s和0.05nm/s，电子主导发光层6中Tb(acac)3phen、(fbi)2Ir(acac)和CzSi的蒸发速率分别控制在0.0001nm/s、0.001nm/s和0.05nm/s，空穴阻挡-电子传输层7中TmPyPB的蒸发速率控制在0.05nm/s，阴极修饰层8中LiF的蒸发速率控制在0.005nm/s，金属阴极层9中Al的蒸发速率控制在1.0nm/s。
如图2所示，图2为本实施例制备的黄色有机电致发光器件的电压-电流密度-亮度特性曲线，图2中○曲线为器件的电流密度-电压曲线，□曲线为器件的亮度-电压曲线，根据图2可知，器件的亮度随着电流密度和驱动电压的升高而升高，器件的起亮电压为3.0伏，在电压为9.8伏、电流密度为553.42毫安每平方厘米(mA/cm2)时器件获得最大亮度84871坎德拉每平方米(cd/m2)。
如图3所示，图3为本实施例制备的黄色有机电致发光器件的电流密度-功率效率-电流效率特性曲线，根据图3可知，器件的最大电流效率为83.84cd/A，最大功率效率为87.75lm/W。
如图4所示，图4为本发明提供的黄色有机电致发光器件在亮度为20000cd/m2时的光谱图，根据图4可知，光谱主峰位于563纳米。器件色坐标为(0.446，0.532)。
实施例2
先将ITO玻璃上的ITO阳极层激光刻蚀成条状电极，然后依次用清洗液、去离子水超声清洗15min并放入烘箱烘干。接着将烘干后的衬底放入预处理真空室，在真空度为10Pa的氛围下用400V的电压对ITO阳极进行3min的低压等离子处理后将其转移到有机蒸镀室。在真空度为1～2×10-5Pa的有机蒸镀室中，在ITO层上依次蒸镀3nm厚的MoO3阳极修饰层3、40nm厚的TAPC空穴传输-电子阻挡层4、10nm厚(fbi)2Ir(acac)掺杂mCP的空穴主导发光层5、10nm厚Tb(acac)3phen与(fbi)2Ir(acac)共掺杂26DCzPPy的电子主导发光层6和40nm厚的TmPyPB空穴阻挡-电子传输层7。接下来，未完成的器件被转移到金属蒸镀室，在4～6×10-5Pa的真空氛围下蒸镀1.0nm厚的LiF阴极修饰层8，最后通过特制的掩模版在LiF层上蒸镀120nm厚的金属Al阴极层9，制备成结构为ITO/MoO3/TAPC/(fbi)2Ir(acac)(2％)：mCP/Tb(acac)3phen(0.2％):(fbi)2Ir(acac)(2％)：26DCzPPy/TmPyPB/LiF/Al的有机电致发光器件。阳极修饰层3中MoO3的蒸发速率控制在0.01nm/s，空穴传输-电子阻挡层4中TAPC的蒸发速率控制在0.05nm/s，空穴主导发光层5中(fbi)2Ir(acac)和mCP的蒸发速率分别控制在0.001nm/s和0.05nm/s，电子主导发光层6中Tb(acac)3phen、(fbi)2Ir(acac)和26DCzPPy的蒸发速率分别控制在0.0001nm/s、0.001nm/s和0.05nm/s，空穴阻挡-电子传输层7中TmPyPB的蒸发速率控制在0.05nm/s，阴极修饰层8中LiF的蒸发速率控制在0.005nm/s，金属阴极层9中Al的蒸发速率控制在1.0nm/s。
检测本实施例制备的黄色有机电致发光器件的性能，实验结果表明，在直流电源驱动下，器件发射位于563纳米左右的黄光。当亮度为20000cd/m2时，器件的色坐标为(0.445,0.531)；随着工作电压的变化，器件的色坐标几乎不变。器件的起亮电压为3.1伏，器件的最大亮度为79548cd/m2。器件的最大电流效率为81.26cd/A，最大功率效率为82.31lm/W。
实施例3
先将ITO玻璃上的ITO阳极层激光刻蚀成条状电极，然后依次用清 洗液、去离子水超声清洗15min并放入烘箱烘干。接着将烘干后的衬底放入预处理真空室，在真空度为10Pa的氛围下用400V的电压对ITO阳极进行3min的低压等离子处理后将其转移到有机蒸镀室。在真空度为1～2×10-5Pa的有机蒸镀室中，在ITO层上依次蒸镀3nm厚的MoO3阳极修饰层3、40nm厚的TAPC空穴传输-电子阻挡层4、10nm厚(fbi)2Ir(acac)掺杂TcTa的空穴主导发光层5、10nm厚Tb(acac)3与(fbi)2Ir(acac)共掺杂26DCzPPy的电子主导发光层6和40nm厚的TmPyPB空穴阻挡-电子传输层7。接下来，未完成的器件被转移到金属蒸镀室，在4～6×10-5Pa的真空氛围下蒸镀1.0nm厚的LiF阴极修饰层8，最后通过特制的掩模版在LiF层上蒸镀120nm厚的金属Al阴极层9，制备成结构为ITO/MoO3/TAPC/(fbi)2Ir(acac)(2％)：TcTa/Tb(acac)3(0.3％):(fbi)2Ir(acac)(2％)：26DCzPPy/TmPyPB/LiF/Al的有机电致发光器件。阳极修饰层3中MoO3的蒸发速率控制在0.01nm/s，空穴传输-电子阻挡层4中TAPC的蒸发速率控制在0.05nm/s，空穴主导发光层5中(fbi)2Ir(acac)和TcTa的蒸发速率分别控制在0.001nm/s和0.05nm/s，电子主导发光层6中Tb(acac)3、(fbi)2Ir(acac)和26DCzPPy的蒸发速率分别控制在0.0003nm/s、0.002nm/s和0.1nm/s，空穴阻挡-电子传输层7中TmPyPB的蒸发速率控制在0.05nm/s，阴极修饰层8中LiF的蒸发速率控制在0.005nm/s，金属阴极层9中Al的蒸发速率控制在1.0nm/s。
检测本实施例制备的黄色有机电致发光器件的性能，实验结果表明，器件在直流电源驱动下，发射位于563纳米左右的黄光。当亮度为20000cd/m2时，器件的色坐标为(0.445,0.536)；随着工作电压的变化，器件的色坐标几乎不变。器件的起亮电压为3.0伏，器件的最大亮度为81096cd/m2。器件的最大电流效率为80.06cd/A，最大功率效率为83.80lm/W。
实施例4
先将ITO玻璃上的ITO阳极层激光刻蚀成条状电极，然后依次用清洗液、去离子水超声清洗15min并放入烘箱烘干。接着将烘干后的衬底放入预处理真空室，在真空度为10Pa的氛围下用400V的电压对ITO阳极进行3min的低压等离子处理后将其转移到有机蒸镀室。在真空度为 1～2×10-5Pa的有机蒸镀室中，在ITO层上依次蒸镀5nm厚的MoO3阳极修饰层3、30nm厚的TAPC空穴传输-电子阻挡层4、15nm厚Ir(BT)2(acac)掺杂mCP的空穴主导发光层5、15nm厚Tb(acac)3与Ir(BT)2(acac)共掺杂26DCzPPy的电子主导发光层6和35nm厚的3TPYMB空穴阻挡-电子传输层7。接下来，未完成的器件被转移到金属蒸镀室，在4～6×10-5Pa的真空氛围下蒸镀1.1nm厚的LiF阴极修饰层8，最后通过特制的掩模版在LiF层上蒸镀250nm厚的金属Al阴极层9，制备成结构为ITO/MoO3/TAPC/Ir(BT)2(acac)(2％)：mCP/Tb(acac)3(0.1％)：Ir(BT)2(acac)(2％)：26DCzPPy/3TPYMB/LiF/Al的有机电致发光器件。阳极修饰层3中MoO3的蒸发速率控制在0.02nm/s，空穴传输-电子阻挡层4中TAPC的蒸发速率控制在0.06nm/s，空穴主导发光层5中Ir(BT)2(acac)和mCP的蒸发速率分别控制在0.002nm/s和0.1nm/s，电子主导发光层6中Tb(acac)3、Ir(BT)2(acac)和26DCzPPy的蒸发速率分别控制在0.0001nm/s、0.002nm/s和0.1nm/s，空穴阻挡-电子传输层7中3TPYMB的蒸发速率控制在0.08nm/s，阴极修饰层8中LiF的蒸发速率控制在0.02nm/s，金属阴极层9中Al的蒸发速率控制在0.9nm/s。
检测本实施例制备的黄色有机电致发光器件的性能，实验结果表明，器件在直流电源驱动下，发射位于563纳米左右的黄光。当亮度为20000cd/m2时，器件的色坐标为(0.446,0.538)；随着工作电压的变化，器件的色坐标几乎不变。器件的起亮电压为3.1伏，器件的最大亮度为80119cd/m2。器件的最大电流效率为82.36cd/A，最大功率效率为83.42lm/W。
实施例5
先将ITO玻璃上的ITO阳极层激光刻蚀成条状电极，然后依次用清洗液、去离子水超声清洗15min并放入烘箱烘干。接着将烘干后的衬底放入预处理真空室，在真空度为10Pa的氛围下用400V的电压对ITO阳极进行3min的低压等离子处理后将其转移到有机蒸镀室。在真空度为1～2×10-5Pa的有机蒸镀室中，在ITO层上依次蒸镀6nm厚的MoO3阳极修饰层3、50nm厚的TAPC空穴传输-电子阻挡层4、12nm厚Ir(DMP)3掺杂TCP的空穴主导发光层5、16nm厚Tb(acac)3phen与Ir(DMP)3共掺 杂UGH2的电子主导发光层6和45nm厚的BmPyPhB空穴阻挡-电子传输层7。接下来，未完成的器件被转移到金属蒸镀室，在4～6×10-5Pa的真空氛围下蒸镀1.1nm厚的LiF阴极修饰层8，最后通过特制的掩模版在LiF层上蒸镀240nm厚的金属Al阴极层9，制备成结构为ITO/MoO3/TAPC/Ir(DMP)3(3％)：TCP/Tb(acac)3phen(0.3％)：Ir(DMP)3(3％)：UGH2/BmPyPhB/LiF/Al的有机电致发光器件。阳极修饰层3中MoO3的蒸发速率控制在0.01nm/s，空穴传输-电子阻挡层4中TAPC的蒸发速率控制在0.08nm/s，空穴主导发光层5中Ir(DMP)3和TCP的蒸发速率分别控制在0.003nm/s和0.1nm/s，电子主导发光层6中Tb(acac)3phen、Ir(DMP)3和UGH2的蒸发速率分别控制在0.0003nm/s、0.003nm/s和0.1nm/s，空穴阻挡-电子传输层7中BmPyPhB的蒸发速率控制在0.09nm/s，阴极修饰层8中LiF的蒸发速率控制在0.02nm/s，金属阴极层9中Al的蒸发速率控制在1.2nm/s。
检测本实施例制备的黄色有机电致发光器件的性能，实验结果表明，器件在直流电源驱动下，发射位于563纳米左右的黄光。当亮度为20000cd/m2时，器件的色坐标为(0.442,0.539)；随着工作电压的变化，器件的色坐标几乎不变。器件的起亮电压为3.0伏，器件的最大亮度为78463cd/m2。器件的最大电流效率为79.78cd/A，最大功率效率为83.50lm/W。
实施例6
先将ITO玻璃上的ITO阳极层激光刻蚀成条状电极，然后依次用清洗液、去离子水超声清洗15min并放入烘箱烘干。接着将烘干后的衬底放入预处理真空室，在真空度为10Pa的氛围下用400V的电压对ITO阳极进行3min的低压等离子处理后将其转移到有机蒸镀室。在真空度为1～2×10-5Pa的有机蒸镀室中，在ITO层上依次蒸镀3nm厚的MoO3阳极修饰层3、40nm厚的TAPC空穴传输-电子阻挡层4、10nm厚fac-Ir(ppy)2Pc掺杂BSB的空穴主导发光层5、10nm厚Tb(acac)3phen与fac-Ir(ppy)2Pc共掺杂BCBP的电子主导发光层6和40nm厚的TPBi空穴阻挡-电子传输层7。接下来，未完成的器件被转移到金属蒸镀室，在4～6×10-5Pa的真空氛围下蒸镀1.0nm厚的LiF阴极修饰层8，最后通过特制的掩模版在 LiF层上蒸镀120nm厚的金属Al阴极层9，制备成结构为ITO/MoO3/TAPC/fac-Ir(ppy)2Pc(2.5％)：BSB/Tb(acac)3phen(0.3％)：fac-Ir(ppy)2Pc(2.5％)：BCBP/TPBi/LiF/Al的有机电致发光器件。阳极修饰层3中MoO3的蒸发速率控制在0.06nm/s，空穴传输-电子阻挡层4中TAPC的蒸发速率控制在0.08nm/s，空穴主导发光层5中fac-Ir(ppy)2Pc和BSB的蒸发速率分别控制在0.0025nm/s和0.1nm/s，电子主导发光层6中Tb(acac)3phen、fac-Ir(ppy)2Pc和BCBP的蒸发速率分别控制在0.0025nm/s、0.0003nm/s和0.1nm/s，空穴阻挡-电子传输层7中TPBi的蒸发速率控制在0.08nm/s，阴极修饰层8中LiF的蒸发速率控制在0.02nm/s，金属阴极层9中Al的蒸发速率控制在1.5nm/s。
检测本实施例制备的黄色有机电致发光器件的性能，实验结果表明，器件在直流电源驱动下，发射位于563纳米左右的黄光。当亮度为20000cd/m2时，器件的色坐标为(0.447,0.535)；随着工作电压的变化，器件的色坐标几乎不变。器件的起亮电压为3.0伏，器件的最大亮度为76598cd/m2。器件的最大电流效率为79.61cd/A，最大功率效率为83.33lm/W。
以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以对本发明进行若干改进和修饰，这些改进和修饰也落入本发明权利要求的保护范围内。
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。

Claims (10)

  1. 一种黄色有机电致发光器件，包括：
    衬底；
    复合于所述衬底上的阳极层；
    复合于所述阳极层上的阳极修饰层；
    复合于所述阳极修饰层上的空穴传输-电子阻挡层；
    复合于所述空穴传输-电子阻挡层上的空穴主导发光层；
    复合于所述空穴主导发光层上的电子主导发光层；
    复合于所述电子主导发光层上的空穴阻挡-电子传输层；
    复合于所述空穴阻挡-电子传输层上的阴极修饰层；
    复合于所述阴极修饰层上的阴极层；
    所述电子主导发光层由有机敏化材料、黄色有机发光材料与电子型有机主体材料组成；
    所述有机敏化材料选自三(乙酰丙酮)合铽和三(乙酰丙酮)林菲罗啉合铽中的一种或两种；
    所述有机敏化材料为所述电子型有机主体材料的0.1wt％～0.5wt％。
  2. 根据权利要求1所述的黄色有机电致发光器件，其特征在于，所述黄色有机发光材料的含量为所述电子型有机主体材料的1.0wt％～3.0wt％。
  3. 根据权利要求1或2所述的黄色有机电致发光器件，其特征在于，所述黄色有机发光材料选自双(2-(9,9-二乙基-芴-2-基)-1-苯基-1H-苯并[d]咪唑)乙酰丙酮合铱、双(2-苯基苯并噻唑)(乙酰丙酮)合铱、三[3-(2,6-二甲基苯酚基)-6-苯基哒嗪]合铱和双(2-苯基吡啶)(3-(吡啶-2-基)-2H-苯并吡喃-2-酮)合铱中的一种或多种。
  4. 根据权利要求1所述的黄色有机电致发光器件，其特征在于，所述电子型有机主体材料选自2,6-二[3-(9H-9-咔唑基)苯基]吡啶、1,4-双(三苯基硅烷基)苯、2,2’-双(4-(9-咔唑基)苯基)联苯、三[2,4,6-三甲基-3-(3-吡啶基)苯基]硼烷、1，3，5-三[(3-吡啶)-3-苯基]苯、1,3-双[3,5- 二(3-吡啶基)苯基]苯、1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯、9-(4-特丁基苯基)-3,6-双(三苯基硅基)-9H-咔唑和9-(8-二苯基磷酰基)-二苯唑[b,d]呋喃-9H-咔唑中的一种或多种。
  5. 根据权利要求1所述的黄色有机电致发光器件，其特征在于，所述空穴主导发光层由黄色有机发光材料和空穴型有机主体材料组成；所述黄色有机发光材料为所述空穴型有机主体材料的1.0wt％～3.0wt％；
    所述黄色有机发光材料选自双(2-(9,9-二乙基-芴-2-基)-1-苯基-1H-苯并[d]咪唑)乙酰丙酮合铱、双(2-苯基苯并噻唑)(乙酰丙酮)合铱、三[3-(2,6-二甲基苯酚基)-6-苯基哒嗪]合铱和双(2-苯基吡啶)(3-(吡啶-2-基)-2H-苯并吡喃-2-酮)合铱中的一种或多种；
    所述空穴型有机主体材料选自4，4’-N，N’-二咔唑二苯基、1,3-二咔唑-9-基苯、9,9'-(5-(三苯基硅烷基)-1,3-苯基)二-9H-咔唑、1,3,5-三(9-咔唑基)苯、4,4',4″-三(咔唑-9-基)三苯胺和1,4-双(三苯基硅烷基)联苯中的一种或多种。
  6. 根据权利要求1所述的黄色有机电致发光器件，其特征在于，所述空穴传输-电子阻挡层的材料选自4,4'-环己基二[N,N-二(4-甲基苯基)苯胺]、二吡嗪[2，3-f:2’,3’-h]喹喔啉-2，3，6，7，10，11-六腈基、N4,N4'-二(萘-1-基)-N4,N4'-双(4-乙烯基苯基)联苯-4,4'-二胺、N,N'-双(3-甲基苯基)-N,N'-双(苯基)-2，7-二胺-9，9-螺双芴、N,N,N',N'-四-(3-甲基苯基)-3-3’-二甲基对二氨基联苯、2,2'-二(3-(N,N-二-对甲苯氨基)苯基)联苯、N,N'-二(萘-2-基)-N,N'-二(苯基)二氨基联苯、N,N'-二(萘-1基)-N,N'–二苯基-2，7-二氨基-9，9-螺双芴、N,N'-二(3-甲基苯基)-N,N'-二苯基-2,7-二氨基-9，9-二甲基芴、N,N'-二(萘-1-基)-N,N'-二苯基-2，7-二氨基-9，9-二甲基芴、N,N'–二(3-甲基苯基)-N,N'–二苯基-2，7-二氨基-9，9-二苯基芴、N,N'-二(萘-1-基)-N,N'-二苯基-2,7-二氨基-9,9-二苯基芴、N,N'-二(萘-1-基)-N,N'-二苯基-2,2’-二甲基二氨基联苯、2,2',7,7'-四(N,N-二苯基氨基)-2,7-二氨基-9,9-螺双芴、9,9-二[4-(N,N–二萘-2-基-氨基)苯基]-9H-芴、9，9-[4-(N-萘-1基-N-苯胺)-苯基]-9H-芴、2，2’-二[N,N-二(4-苯基)氨基]-9,9-螺双芴、2,2’-双(N,N- 苯氨基)-9,9-螺双芴、N,N’-二苯基-N,N’-(1-萘基)-1，1’-联苯-4，4’-二胺和4，4’-二[N-(对-甲苯基)-N-苯基-氨基]二苯基中的一种或多种。
  7. 根据权利要求1所述的黄色有机电致发光器件，其特征在于，所述空穴阻挡-电子传输层的材料选自三[2,4,6-三甲基-3-(3-吡啶基)苯基]硼烷、1，3，5-三[(3-吡啶)-3-苯基]苯、1,3-双[3,5-二(3-吡啶基)苯基]苯和1,3,5-三(1-苯基-1H-苯并咪唑-2-基)苯中的一种或多种。
  8. 根据权利要求1所述的黄色有机电致发光器件，其特征在于，所述阳极修饰层的厚度为1～10nm，所述空穴传输-电子阻挡层的厚度为30～60nm，所述空穴主导发光层的厚度为5～20nm，所述电子主导发光层的厚度为5～20nm，所述空穴阻挡-电子传输层的厚度为30～60nm，所述阴极修饰层的厚度为0.8～1.2nm，所述阴极层的厚度为90～300nm。
  9. 一种黄色有机电致发光器件的制备方法，包括：
    将衬底上的阳极层进行刻蚀，烘干后在所述阳极层上依次蒸镀阳极修饰层、空穴传输-电子阻挡层、空穴主导发光层、电子主导发光层、空穴阻挡-电子传输层、阴极修饰层与阴极层；
    所述电子主导发光层由有机敏化材料、黄色有机发光材料与电子型有机主体材料组成；
    所述有机敏化材料选自三(乙酰丙酮)合铽和三(乙酰丙酮)林菲罗啉合铽中的一种或两种；
    所述有机敏化材料为所述电子型有机主体材料的0.1wt％～0.5wt％。
  10. 根据权利要求9所述的制备方法，其特征在于，所述阳极修饰层的蒸发速率为0.01～0.05nm/s，所述空穴传输-电子阻挡层、空穴主导发光层、电子主导发光层与空穴阻挡-电子传输层中主体材料的蒸发速率为0.05～0.1nm/s，所述电子主导发光层中的有机敏化材料的蒸发速率为0.00005～0.0005nm/s，所述电子主导发光层与空穴主导发光层中的黄色发光材料的蒸发速率为0.0005～0.003nm/s，所述阴极修饰层的蒸发速率为0.005～0.05nm/s，所述阴极层的蒸发速率为0.5～2.0nm/s。
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