WO2016056391A1 - Mécanisme de régulation de température pour objet à traiter et procédé pour graver sélectivement un film de nitrure d'un film multicouche - Google Patents

Mécanisme de régulation de température pour objet à traiter et procédé pour graver sélectivement un film de nitrure d'un film multicouche Download PDF

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Publication number
WO2016056391A1
WO2016056391A1 PCT/JP2015/076923 JP2015076923W WO2016056391A1 WO 2016056391 A1 WO2016056391 A1 WO 2016056391A1 JP 2015076923 W JP2015076923 W JP 2015076923W WO 2016056391 A1 WO2016056391 A1 WO 2016056391A1
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WIPO (PCT)
Prior art keywords
movable stage
drive plate
cooling body
temperature control
control mechanism
Prior art date
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PCT/JP2015/076923
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English (en)
Japanese (ja)
Inventor
勇貴 保坂
義弘 梅澤
俊希 中島
幸一 長倉
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2015112501A external-priority patent/JP2016082216A/ja
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to KR1020177006371A priority Critical patent/KR102448244B1/ko
Priority to US15/509,522 priority patent/US10192774B2/en
Publication of WO2016056391A1 publication Critical patent/WO2016056391A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • Embodiments of the present invention relate to a temperature control mechanism of an object to be processed and a method of selectively etching a nitride film from a multilayer film.
  • the target object may be etched by alternately performing a process of cooling the target object and a step of heating the target object.
  • the cooling of the object to be processed and the heating of the object to be processed are performed using individual apparatuses.
  • the apparatus for cooling the object to be processed and the apparatus for heating the object to be processed it is necessary to frequently convey the object to be processed. For this reason, the processing throughput of a to-be-processed object falls.
  • Patent Document 1 In order to cope with this decrease in throughput, a mechanism for cooling the object to be processed and heating the object to be processed in the same apparatus has been developed (for example, see Patent Document 1).
  • the mechanism described in Patent Document 1 includes a cooling plate, a heater plate, and a separation pin.
  • a flow path is formed inside the cooling plate, and the temperature of the cooling plate is maintained at a low temperature by supplying a coolant to the flow path.
  • the heater plate is provided with a thin film heater, and the heater plate places an object to be processed on the upper surface thereof.
  • the separation pin is connected to the heater plate at the tip thereof so that the heater plate can be moved in the vertical direction.
  • the heater plate when the object to be processed is heated, the heater plate is moved upward together with the separation pin to be separated from the cooling plate. And a to-be-processed object is heated by heating a heater plate with a thin film heater.
  • the heater plate when the object to be processed is cooled, the heater plate is moved downward together with the separation pin to bring the heater plate into contact with the upper surface of the cooling plate. Thereby, the heat of the heater plate is absorbed by the cooling plate, and the object to be processed on the heater plate is cooled.
  • Patent Document 1 controls the temperature of the object to be processed by moving the heater plate in the vertical direction.
  • this mechanism only one of the two states of the state in which the heater plate and the cooling plate are in contact with each other and the state in which the heater plate and the cooling plate are separated can be selected. It is difficult to control precisely.
  • a temperature control mechanism for an object to be processed is provided.
  • This temperature control mechanism is a movable stage that can be heated, and is connected to the movable stage on which an object to be processed is placed, a coolable cooling body fixedly disposed below the movable stage, and the movable stage.
  • a shaft extending between the one end and the other end, a first flange provided at the other end, and A shaft having a first flange and a second flange provided between the cooling body, an upper surface facing the second flange, and a lower surface opposite to the upper surface;
  • a drive plate provided between the flange and the second flange, an elastic body provided between the lower surface of the drive plate and the first flange, a drive device for moving the drive plate in the vertical direction, Is provided.
  • the force exerted by the drive plate moving downward is transmitted to the movable stage via the elastic body, so that the contact pressure between the movable stage and the cooling body is below the drive plate. It can be adjusted according to the amount of movement.
  • this temperature control mechanism it is possible to adjust the contact thermal resistance between the movable stage and the cooling body by adjusting the contact pressure between the movable stage and the cooling body. Therefore, the amount of heat exchange between the movable stage and the cooling body can be adjusted by controlling the amount of downward movement of the drive plate. Therefore, according to this temperature control mechanism, precise temperature control can be performed.
  • the elastic body is a coiled spring, and the spring is configured to have a natural length or a length longer than the natural length when the drive plate is disposed at the highest position. Also good.
  • the drive device includes a drive shaft that extends in the vertical direction and is connected to the drive plate, and a motor that moves the drive shaft so that the drive plate moves in the vertical direction. Also good.
  • the movable stage may have a heater.
  • a coolant channel may be formed inside the cooling body.
  • a method for selectively etching a nitride film from an object to be processed having a multilayer film in which an oxide film and a nitride film are alternately stacked using the above-described temperature control mechanism is provided.
  • the step of moving the drive plate downward and bringing the movable stage into contact with the cooling body, and the step of bringing the movable stage into contact with the cooling body A step of selectively etching the nitride film from the multilayer film by a plasma of a processing gas containing fluorine and hydrogen, and a step of moving the drive plate upward and separating the movable stage from the cooling body after the step of etching the nitride film
  • the step of heating the movable stage and removing the reaction product generated in the step of etching the nitride film after the step of placing the object to be processed on the upper surface of the movable stage, the step of moving the drive plate downward and bringing the movable stage into contact with the cooling body, and the step of bringing the movable stage into contact with the cooling body, A step of selectively etching the nitride film from the multilayer film by a plasma of a processing gas containing fluorine and hydrogen, and a step of moving the drive plate upward
  • the above method includes a step of cooling the object to be processed and etching the nitride film, and a step of removing the reaction product by heating the object to be processed.
  • the object to be treated can be cooled and heated, and precise temperature control is possible.
  • FIG. 1 It is sectional drawing which shows schematically the plasma processing apparatus which concerns on one Embodiment. It is a top view of the high frequency antenna of the plasma processing apparatus shown in FIG. It is a figure for demonstrating operation
  • (A) is a figure for demonstrating the position of the drive plate of the structural example 2
  • (b) is a figure which shows the relationship between the position of the drive plate in the temperature control mechanism of the structural example 2, and a contact thermal resistance.
  • (A) is a figure for demonstrating the position of the drive plate of the structural example 3
  • (b) is a figure which shows the relationship between the position of the drive plate in the temperature control mechanism of the structural example 3, and contact thermal resistance.
  • (A) is a figure for demonstrating the position of the drive plate of the structural example 4
  • (b) is a figure which shows the relationship between the position of the drive plate in the temperature control mechanism of the structural example 4, and contact thermal resistance.
  • FIG 3 is a flowchart illustrating a method for selectively etching a nitride film from a multilayer film according to an embodiment. It is a figure which shows an example of the to-be-processed object prepared in process ST1. It is a figure which shows the to-be-processed object after the 2nd film
  • FIG. 1 is a cross-sectional view schematically showing a plasma processing apparatus according to an embodiment.
  • the plasma processing apparatus 10 includes a processing container 12.
  • the processing container 12 has a substantially cylindrical shape centered on the axis Z, and defines a processing space S as its internal space.
  • a temperature control mechanism TC is provided at the lower part of the processing container.
  • the temperature control mechanism TC has a function of holding the object to be processed W and selectively cooling or heating the object to be processed W. Details of the temperature control mechanism TC will be described later.
  • a plate-like dielectric 40 is provided on the ceiling of the processing container 12.
  • the plate-like dielectric 40 is made of, for example, quartz glass, ceramic, or the like, and is provided so as to face a movable stage 16 described later of the temperature control mechanism TC.
  • the plate-like dielectric 40 is formed in a disk shape, for example, and is airtightly attached so as to close an opening formed in the ceiling portion of the processing container 12.
  • a gas supply unit 42 is connected to the processing container 12.
  • the gas supply unit 42 supplies gas to the processing space S.
  • the gas supply unit 42 supplies a gas containing fluorine (F) and hydrogen (H).
  • the gas supply unit 42 may supply nitrogen gas (N 2 ) to the processing space S.
  • the gas supply unit 42 may supply oxygen gas (O 2 ) or argon gas (Ar) to the processing space S.
  • emits the atmosphere in the process container 12 is connected to the bottom part of the process container 12 via the exhaust pipe 52.
  • the exhaust unit 50 is configured by, for example, a vacuum pump, and can reduce the pressure inside the processing container 12 to a predetermined pressure.
  • a wafer loading / unloading port 54 is formed in the side wall of the processing vessel 12, and a gate valve 56 is provided at the wafer loading / unloading port 54.
  • the gate valve 56 is opened, and the workpiece W is placed on the movable stage 16 in the processing container 12. Thereafter, the gate valve 56 is closed and the workpiece W is processed.
  • FIG. 2 is a plan view of the high-frequency antenna 60.
  • the high-frequency antenna 60 is roughly composed of an inner antenna element 62A disposed at the center of the plate-like dielectric 40 and an outer antenna element 62B disposed so as to surround the outer periphery thereof.
  • Each of the inner antenna element 62A and the outer antenna element 62B may be formed in a spiral coil shape made of a conductor such as copper, aluminum, or stainless steel.
  • Both the inner antenna element 62A and the outer antenna element 62B are sandwiched and integrated with a plurality of sandwiching bodies 64.
  • each sandwiching body 64 is formed in a rod shape, and these sandwiching bodies 64 are radially arranged so as to project from the vicinity of the center of the inner antenna element 62A to the outside of the outer antenna element 62B.
  • FIG. 2 is a specific example when the inner antenna element 62A and the outer antenna element 62B are sandwiched between three sandwiching bodies 64.
  • the shield member 80 includes a cylindrical inner shield wall 82A provided between the antenna elements 62A and 62B so as to surround the inner antenna element 62A, and a cylindrical outer shield provided so as to surround the outer antenna element 62B. And a wall 82B.
  • the upper side surface of the plate-like dielectric 40 is divided into a central portion (central zone) inside the inner shield wall 82A and a peripheral portion (peripheral zone) between the shield walls 82A and 82B.
  • a disc-shaped inner shield plate 84A is provided so as to close the opening of the inner shield wall 82A.
  • a donut plate-shaped outer shield plate 84B is provided so as to close the opening between the shield walls 82A and 82B. The heights of the inner shield plate 84A and the outer shield plate 84B can be adjusted separately by the actuators 88A and 88B, respectively.
  • High frequency power supplies 70A and 70B are connected to the antenna elements 62A and 62B, respectively. Thereby, the high frequency of the same frequency or a different frequency can be applied to inner antenna element 62A and outer antenna element 62B.
  • a high frequency of a predetermined frequency for example, 40 MHz
  • the gas introduced into the processing container 12 is excited by the induced magnetic field formed in the processing container 12.
  • a donut-shaped plasma is generated at the center on the workpiece W.
  • a high frequency of a predetermined frequency for example, 60 MHz
  • a predetermined frequency for example, 60 MHz
  • the gas introduced into the processing container 12 is generated by the induced magnetic field formed in the processing container 12.
  • another donut-shaped plasma is generated at the peripheral edge on the workpiece W.
  • the temperature control mechanism TC is used to control the temperature of the object to be processed.
  • the temperature control mechanism TC includes a cooling body 14, a movable stage 16, a shaft 18, a driving plate 20, a driving device 22, and an elastic body 24.
  • the movable stage 16 has a substantially disk shape and is disposed in the processing container 12. As will be described later, the movable stage 16 is configured to be movable in the direction away from the cooling body 14 and the direction approaching the cooling body 14, that is, in the vertical direction as the drive plate 20 moves in the vertical direction. Has been.
  • the movable stage 16 includes an electrode 28 that is a conductive film, and has a structure in which the electrode 28 is disposed between a pair of insulating layers or insulating sheets.
  • a DC power source PS is electrically connected to the electrode 28.
  • the movable stage 16 is used as an electrostatic chuck that attracts and holds the workpiece W by a Coulomb force generated by a DC voltage from the DC power source PS.
  • a heater HT as a heating element may be embedded in the movable stage 16.
  • the heater HT is electrically connected to a heater power source HP.
  • the heater HT may not be embedded in the movable stage 16 as long as the movable stage 16 can be heated.
  • any heater such as a thin film heater that is in close contact with the surface of the movable stage 16 or a radiant heater that radiates and heats the movable stage by emitting infrared rays from above the movable stage 16 may be employed.
  • the heater HT can heat the temperature of the movable stage 16 to the first temperature by electric power supplied from the heater power source HP.
  • the first temperature is higher than a second temperature described later, and is 200 ° C., for example.
  • the movable stage 16 is configured to be heated.
  • a cooling body 14 is provided below the movable stage 16.
  • the cooling body 14 has a substantially disk shape, and is fixedly disposed below the movable stage 16 in the processing container 12.
  • the plasma processing apparatus 10 further includes a cylindrical holding portion 27.
  • the cylindrical holding part 27 is provided in the lower part of the process container 12, and is holding the cooling body 14 in contact with the edge part of the side surface and bottom face of the cooling body 14. As shown in FIG.
  • the cooling body 14 is used to cool the movable stage 16 by removing heat from the movable stage 16 in contact with the upper surface thereof.
  • a refrigerant flow path 15 is formed inside the cooling body 14, and a refrigerant inlet pipe and a refrigerant outlet pipe are connected to the refrigerant flow path 15.
  • the refrigerant inlet pipe and the refrigerant outlet pipe are connected to the chiller unit 26.
  • the chiller unit 26 cools the refrigerant to the first temperature, and supplies the refrigerant to the refrigerant flow path 15 via the inlet pipe.
  • the second temperature is a temperature lower than the first temperature, for example, ⁇ 50 ° C.
  • the refrigerant supplied to the refrigerant flow path 15 circulates back to the chiller unit 26 from the refrigerant outlet pipe.
  • the cooling body 14 is configured to be able to cool the temperature of the cooling body 14 to the second temperature by circulating the refrigerant through the refrigerant flow path 15.
  • the cooling body 14 is provided with a through hole 14c that penetrates the cooling body 14 along the axis Z.
  • a telescopic cylindrical bellows 25 is provided in the through hole 14c.
  • One end of the bellows 25 is connected to the lower surface of the movable stage 16, and the other end of the bellows 25 is connected to the upper surface of the drive plate 20.
  • the bellows 25 provides a space for inserting a wiring connecting the heater HT and the heater power supply HP and a wiring connecting the electrode 28 and the DC power supply PS.
  • the cooling body 14 is formed with a plurality of through-holes 14h penetrating the cooling body 14 in the thickness direction at positions radially outside the through-holes 14c.
  • a shaft 18 is inserted into each of these through holes 14h.
  • a plurality of through holes 14h are formed in the cooling body 14, and the temperature control mechanism TC has a plurality of shafts 18 inserted into these through holes 14h.
  • the configuration is not limited. That is, one through hole 14h may be formed in the cooling body 14, and the temperature control mechanism TC may have only one shaft 18 inserted into the through hole 14h.
  • the temperature control mechanism TC has a plurality of shafts 18 will be described.
  • each shaft 18 has one end (upper end) and the other end (lower end). One end of each shaft 18 is connected to the lower surface of the movable stage 16. Further, each shaft 18 extends in the vertical direction to the lower side of the drive plate 20 through the corresponding through hole 14h. Therefore, the other end of each shaft 18 is disposed below the drive plate 20.
  • Each of the plurality of shafts 18 is provided with a first flange 18a and a second flange 18b.
  • the first flange 18 a has a flat plate shape, for example, and is provided at the other end of the shaft 18.
  • the second flange 18b has, for example, a conical shape.
  • the second flange 18 b is provided between one end and the other end of the shaft 18 and between the first flange 18 a and the cooling body 14.
  • the first flange 18 a and the second flange 18 b protrude from other portions of the shaft 18 in a direction orthogonal to the longitudinal direction of the shaft 18, that is, in the radial direction.
  • the diameter of the shaft 18 is D1 in a portion between the one end and the second flange 18b and a portion between the second flange 18b and the first flange 18a.
  • the diameter of the first flange 18a is D2
  • the diameter of the second flange 18b is D3.
  • the diameter D2 and the diameter D3 are larger than the diameter D1.
  • the diameter D1 is smaller than the diameter of the through hole 14h and the diameter of a through hole 20h described later, and the diameter D2 and the diameter D3 are larger than the diameter of the through hole 14h and the diameter of a through hole 20h described later.
  • a drive plate 20 is provided between the first flange 18a and the second flange 18b.
  • the drive plate 20 has a substantially disk shape and is provided below the cooling body 14.
  • the drive plate 20 has an upper surface 20a facing the second flange 18b and a lower surface 20b opposite to the upper surface 20a.
  • the drive plate 20 is disposed so that the upper surface 20 a faces the lower surface of the cooling body 14.
  • the drive plate 20 is formed with the plurality of through holes 20h that penetrate the drive plate 20 in the thickness direction. These through holes 20 h are formed at positions facing the plurality of through holes 14 h formed in the cooling body 14. A portion between the first flange 18a and the second flange 18b of the shaft 18 is inserted into each of the plurality of through holes 20h.
  • a driving device 22 is connected to the driving plate 20.
  • the drive device 22 includes a drive shaft 30 and a motor M.
  • the drive shaft 30 extends in the vertical direction along the axis Z.
  • One end (upper end) of the drive shaft 30 is connected to the drive plate 20.
  • the other end (lower end) of the drive shaft 30 is connected to the motor M.
  • the motor M applies a driving force for moving the drive shaft 30 along the axis Z direction, that is, the vertical direction, to the drive shaft 30.
  • the drive shaft 30 is, for example, a ball screw, and moves along the axis Z direction by converting the rotational motion of the motor M into a linear motion in the axis Z direction.
  • the drive device 22 moves the drive plate 20 in the axis Z direction, that is, in the vertical direction.
  • the distance P between the lower surface of the cooling body 14 and the lower surface 20b of the drive plate 20 and the distance Q between the lower surface 20b of the drive plate 20 and the first flange 18a are the upper and lower sides of the drive plate 20. It changes as the direction moves.
  • An elastic body 24 is provided between the lower surface 20b of the drive plate 20 and the first flange 18a.
  • the elastic body 24 is a cylindrical coil spring.
  • the elastic body 24 is provided coaxially with the shaft 18.
  • the elastic body 24 should just be comprised from the elastic body, and is not limited to a spring.
  • the plasma processing apparatus 10 may further include a control unit 100 that controls each part of the plasma processing apparatus 10 including the temperature control mechanism TC.
  • the controller 100 can be a controller such as a programmable computer device.
  • the control part 100 can control each part of the plasma processing apparatus 10 according to the program based on a recipe. For example, the control unit 100 sends a control signal to the motor M of the drive device 22 to control the vertical position of the drive plate 20.
  • the control unit 100 controls the power supplied to the antenna element 62A, the power supplied to the antenna element 62B, the pressure in the processing container 12, the gas type supplied to the processing container 12, and the gas flow rate.
  • the control signal can be supplied to the high-frequency power source 70A, the high-frequency power source 70B, the exhaust unit 50, and the gas supply unit 42. Further, the control unit 100 can send a control signal to the heater power supply HP in order to adjust the temperature of the heater HT. In this way, the control unit 100 controls each unit of the plasma processing apparatus 10 according to the processing recipe so that a desired process is executed by the plasma processing apparatus 10.
  • FIG. 3 is a diagram for explaining the operation of the temperature control mechanism TC when the workpiece W placed on the upper surface of the movable stage 16 is heated.
  • FIG. 4 is a diagram for explaining the operation of the temperature control mechanism TC when the workpiece W placed on the upper surface of the movable stage 16 is cooled.
  • the drive plate 20 of the temperature control mechanism TC is moved upward.
  • the upper surface 20a of the drive plate 20 contacts the second flange 18b, and the force for moving the movable stage 16 upward is transmitted to the movable stage 16 via the shaft 18.
  • the movable stage 16 moves upward, and the movable stage 16 is separated from the cooling body 14.
  • the distance P1 between the lower surface of the cooling body 14 and the lower surface 20b of the drive plate 20 is the distance between the lower surface of the cooling body 14 and the lower surface 20b of the drive plate 20 shown in FIG. It becomes smaller than the distance P between.
  • the distance Q1 between the lower surface 20b of the drive plate 20 and the first flange 18a is larger than the distance Q between the lower surface 20b of the drive plate 20 and the first flange 18a shown in FIG.
  • the bellows 25 extends in the axis Z direction, and one end and the other end of the bellows 25 move following the movement of the movable stage 16 and the drive plate 20.
  • the movable stage 16 is heated by the heater HT.
  • the movable stage 16 is separated from the cooling body 14 through a space. Therefore, in this state, the heat flux from the movable stage 16 toward the cooling body 14 can be interrupted.
  • the space between the movable stage 16 and the cooling body 14 is evacuated, so that heat exchange between the movable stage 16 and the cooling body 14 can be substantially eliminated.
  • the drive plate 20 of the temperature control mechanism TC is moved downward as shown in FIG.
  • the lower surface 20b of the drive plate 20 presses the elastic body 24, and the elastic body 24 is compressed between the drive plate 20 and the first flange 18a.
  • a force for moving the movable stage 16 downward is transmitted to the movable stage 16 via the shaft 18.
  • the movable stage 16 moves downward, and the movable stage 16 comes into contact with the cooling body 14.
  • the distance P2 between the lower surface of the cooling body 14 and the lower surface 20b of the drive plate 20 is the distance between the lower surface of the cooling body 14 and the lower surface 20b of the drive plate 20 shown in FIG.
  • the distance Q2 between the lower surface 20b of the drive plate 20 and the first flange 18a is equal to or less than the distance Q between the lower surface 20b of the drive plate 20 and the first flange 18a shown in FIG.
  • a contact pressure corresponding to the position of the drive plate 20 is generated between the lower surface of the movable stage 16 and the upper surface of the cooling body 14.
  • the amount of compression of the elastic body 24, that is, the elastic energy of the elastic body 24 increases as the amount of downward movement of the drive plate 20 increases. Accordingly, the greater the amount of movement of the drive plate 20 downward, the greater the force in the direction in which the movable stage 16 is pressed against the cooling body 14, and as a result, the contact pressure between the movable stage 16 and the cooling body 14 increases.
  • the contact thermal resistance between the movable stage 16 and the cooling body 14 can be adjusted by adjusting the downward movement amount of the drive plate 20. Specifically, the greater the amount of downward movement of the drive plate 20, the smaller the contact thermal resistance between the movable stage 16 and the cooling body 14.
  • the temperature control mechanism TC When the temperature control mechanism TC is operated as shown in FIG. 3 to heat the workpiece W, or when the temperature control mechanism TC is operated as shown in FIG. 4 to cool the workpiece W. May apply a voltage to the electrode 28 of the movable stage 16 to cause the workpiece W to be electrostatically attracted to the movable stage 16. Thus, the contact pressure between the workpiece W and the movable stage 16 can be increased by electrostatically attracting the workpiece W to the movable stage 16. As a result, the workpiece W can be heated or cooled in a shorter time.
  • a numerical model including an aluminum cooling body 14 having a diameter of 300 mm and a thickness of 5 mm and a movable stage 16 made of silicon carbide (SiC) having a diameter of 300 mm and a thickness of 5 mm is set.
  • the time change of the temperature of the object W placed on the upper surface of the drive plate when the cooling body 14 and the movable stage 16 of this model were brought into contact with each other was obtained by numerical analysis.
  • the workpiece W was a silicon wafer having a diameter of 300 mm.
  • the contact thermal resistance (m 2 ⁇ K / W) between the cooling body 14 and the movable stage 16 was variously changed as a parameter.
  • FIG. 5A shows the numerical analysis results when the initial temperature of the movable stage 16 is 150 ° C. and the temperature of the cooling body 14 is 0 ° C.
  • FIG. 5B shows the numerical analysis results when the initial temperature of the movable stage 16 is 150 ° C. and the temperature of the cooling body 14 is ⁇ 50 ° C.
  • the workpiece W is cooled in a shorter time as the contact thermal resistance between the movable stage 16 and the cooling body 14 is smaller. That is confirmed. From this result, as the contact pressure between the movable stage 16 and the cooling body 14 is increased, the amount of heat exchange per unit time can be increased, and as a result, the substrate can be cooled in a short time. confirmed. Therefore, it was confirmed that the temperature control mechanism TC capable of adjusting the contact pressure between the movable stage 16 and the cooling body 14 has the ability to cool the workpiece W in a short time.
  • each configuration example of the temperature control mechanism TC has a specific relationship between the position of the drive plate 20 and the contact thermal resistance. That is, the relationship between the position of each drive plate 20 and the contact thermal resistance in the configuration examples of these temperature control mechanisms TC is the relationship between the position of the drive plate 20 and the contact thermal resistance in the other configuration examples in the configuration example. Is different. Below, the parameter which should be defined in order to demonstrate the relationship between the position of the drive plate 20 of these structural examples and contact thermal resistance is demonstrated first.
  • FIG. 6 is a view for explaining the position of the drive plate 20.
  • the vertical position of the drive plate 20 is represented as a variable x.
  • the position of the drive plate 20 is a position of x> 0.
  • the position of the drive plate 20 is a position x ⁇ 0.
  • the position L u on the x-axis is the upper operation limit position (the highest position) of the drive plate 20, and the position L d is the lower operation limit position (the lowest position) of the drive plate 20. is there.
  • a position L f on the x-axis indicates the position of the drive plate 20 when the drive plate 20 is moved upward from below and the lower surface of the movable stage 16 is separated from the upper surface of the cooling body 14.
  • the elastic coefficient (for example, spring constant) of the elastic body 24 is defined as k
  • the mass of the movable stage 16 is defined as m
  • the coefficient indicating the rate of change of the contact thermal resistance with respect to the load from the movable stage 16 to the cooling body 14 is defined as ⁇ .
  • ⁇ coefficient indicating the rate of change of the contact thermal resistance with respect to the load from the movable stage 16 to the cooling body 14
  • the temperature control mechanism TC is designed so that the upper end of the elastic body 24 is connected to the lower surface 20b of the drive plate 20 and the position Lf is 0 or less ( Lf ⁇ 0).
  • FIG. 7A shows the movable stage 16, the shaft 18, and the elastic body when the drive plate 20 is at the positions L u , L f , 0, and L d on the x axis in the temperature control mechanism of the configuration example 1. It is a schematic diagram which shows the state of 24.
  • FIG. 7B shows the relationship between the position of the drive plate 20 and the contact thermal resistance in the configuration example 1.
  • the movable stage 16 is separated from the cooling body 14. Therefore, when the drive plate 20 is disposed at the position of L u ⁇ x ⁇ L f , the contact thermal resistance between the drive plate 20 and the cooling body 14 is substantially as shown in FIG. Become infinite.
  • the elastic body 24 is elastically deformed, and the drive plate 20 is positioned between the movable stage 16 and the cooling body 14.
  • a corresponding contact pressure is generated.
  • This contact pressure is expressed by m ⁇ g + k ⁇ x [Pa / m 2 ]. Therefore, when the drive plate 20 is disposed within the range of L f ⁇ x ⁇ L d , the contact thermal resistance between the drive plate 20 and the cooling body 14 is ⁇ / (m ⁇ g + k ⁇ x). It is represented by [K / W].
  • the contact thermal resistance between the drive plate 20 and the cooling body 14 is set to ⁇ / (m ⁇ g + k ⁇ L f ) to ⁇ / (m ⁇ g + k ⁇ L d )
  • the elastic body 24 when the drive plate 20 is disposed within the range of L f ⁇ x ⁇ 0, the elastic body 24 is configured to have a natural length or a length longer than the natural length. Yes. Therefore, within the range of L f ⁇ x ⁇ 0, the elastic body 24 exhibits a tensile force, and thereby a force directed upward is applied to the movable stage 16.
  • FIG. 8A shows the movable stage 16, the shaft 18, and the elastic body 24 when the drive plate 20 is at the positions L u , L f , and L d on the x axis in the temperature control mechanism of the configuration example 2. It is a schematic diagram which shows a state.
  • FIG. 8B shows the relationship between the position of the drive plate 20 and the contact thermal resistance in the configuration example 2.
  • the movable stage 16 and the cooling body 14 are separated from each other. Yes. Therefore, when the drive plate 20 is disposed at the position of L u ⁇ x ⁇ L f , the contact thermal resistance between the drive plate 20 and the cooling body 14 is substantially as shown in FIG. Infinite.
  • the elastic body 24 is elastically deformed, and the drive plate 20 is positioned between the movable stage 16 and the cooling body 14.
  • a corresponding contact pressure is generated.
  • This contact pressure is expressed by m ⁇ g + k ⁇ x [Pa / m 2 ]. Therefore, when the drive plate 20 is disposed within the range of L f ⁇ x ⁇ L d , the contact thermal resistance between the drive plate 20 and the cooling body 14 is ⁇ / (m ⁇ g + k ⁇ x). It is represented by [K / W].
  • the contact thermal resistance between the drive plate 20 and the cooling body 14 is ⁇ / (m ⁇ g + k ⁇ L f ) to ⁇ / (m ⁇ g + k ⁇ L It is possible to control linearly within the range of d ).
  • the elastic body 24 when x ⁇ 0, the elastic body 24 is configured to have a natural length or a length longer than the natural length.
  • FIG. 9A shows the movable stage 16, the shaft 18, and the elastic body when the drive plate 20 is at the positions L u , L f , 0, and L d on the x axis in the temperature control mechanism of the configuration example 3. It is a schematic diagram which shows the state of 24.
  • FIG. 9A shows the movable stage 16, the shaft 18, and the elastic body when the drive plate 20 is at the positions L u , L f , 0, and L d on the x axis in the temperature control mechanism of the configuration example 3.
  • FIG. 9B shows the relationship between the position of the drive plate 20 and the contact thermal resistance in the configuration example 3.
  • the movable stage 16 and the cooling body 14 are separated from each other. Yes. Therefore, when the drive plate 20 is disposed at the position of L u ⁇ x ⁇ L f , the contact thermal resistance between the drive plate 20 and the cooling body 14 is substantially as shown in FIG. Infinite.
  • the elastic body 24 is elastically deformed and corresponds to the position of the drive plate 20 between the movable stage 16 and the cooling body 14.
  • Contact pressure is generated. This contact pressure is expressed by m ⁇ g + k ⁇ x [Pa / m 2 ]. Therefore, when the drive plate 20 is disposed within the range of 0 ⁇ x ⁇ L d , the contact thermal resistance between the drive plate 20 and the cooling body 14 is ⁇ / (m ⁇ g + k ⁇ x) [ K / W]. As shown in FIG.
  • the contact thermal resistance between the drive plate 20 and the cooling body 14 is ⁇ / (m ⁇ g) to ⁇ / (m ⁇ g + k ⁇ L d ). It is possible to control within the range.
  • FIG. 10A shows the movable stage 16, the shaft 18, and the elastic body 24 when the drive plate 20 is at the positions L u , L f , and L d on the x axis in the temperature control mechanism of the configuration example 4. It is a schematic diagram which shows a state.
  • FIG. 10B shows the relationship between the position of the drive plate 20 and the contact thermal resistance in the configuration example 4.
  • the movable stage 16 and the cooling body 14 are separated from each other. Yes. Therefore, as shown in FIG. 10B, when the drive plate 20 is disposed at the position of L u ⁇ x ⁇ L f , the contact thermal resistance between the drive plate 20 and the cooling body 14 is substantially equal. Infinite.
  • the elastic body 24 is elastically deformed, and the drive plate 20 is positioned between the movable stage 16 and the cooling body 14. A corresponding contact pressure is generated.
  • This contact pressure is expressed by m ⁇ g + k ⁇ x [Pa / m 2 ]. Therefore, when the drive plate 20 is disposed within the range of L f ⁇ x ⁇ L d , a load that causes the elastic body 24 to increase the contact pressure between the movable stage 16 and the cooling body 14 is applied to the movable stage 16. Therefore, the contact thermal resistance between the drive plate 20 and the cooling body 14 is represented by ⁇ / (m ⁇ g + k ⁇ x) [K / W].
  • the contact thermal resistance between the drive plate 20 and the cooling body 14 is ⁇ / (m ⁇ g + k ⁇ L f ) to ⁇ / (m ⁇ g + k ⁇ L It is possible to control within the range of d ).
  • the control range of the contact thermal resistance can be adjusted by changing the elastic coefficient k of the elastic body 24. . If the difference between the upper limit value and the lower limit value of the contact thermal resistance is ⁇ within a range in which the contact thermal resistance can be controlled linearly, ⁇ is expressed by the following equation (1).
  • ⁇ expressed by the above formula (1) takes a maximum value when the elastic modulus k is set so that the following formula (2) is satisfied. That is, the control range of the contact thermal resistance by the temperature control mechanism TC can be maximized by designing the elastic coefficient k of the elastic body 24 so that the following formula (2) is satisfied.
  • the movable stage 16 can be moved upward to separate the movable stage 16 from the cooling body 14.
  • the heat exchange between the movable stage 16 and the cooling body 14 is interrupted. Therefore, it becomes possible to rapidly heat the workpiece W by heating the movable stage 16 in a state where the movable stage 16 and the cooling body 14 are separated from each other.
  • the movable stage 16 can be moved downward to bring the movable stage 16 into contact with the cooling body 14.
  • the contact pressure between the movable stage 16 and the cooling body 14 is adjusted according to the downward movement amount of the drive plate 20. Therefore, the amount of heat exchange between the movable stage 16 and the cooling body 14 can be adjusted by controlling the downward movement amount of the drive plate 20. Therefore, according to the temperature control mechanism TC, precise temperature control can be performed.
  • this temperature control mechanism TC for example, when the difference between the temperature of the object to be processed W and the target temperature is large, the drive plate 20 is controlled so that the contact thermal resistance becomes small, and the temperature of the object to be processed W and the target When the difference from the temperature is small, the temperature of the workpiece W can be converged to the target temperature in a short time by controlling the drive plate 20 so as to increase the contact thermal resistance. Therefore, for example, when performing a process in which heating and cooling of the workpiece W are alternately repeated, the throughput of the process can be improved.
  • FIG. 11 is a flowchart illustrating a method MT for selectively etching a nitride film from a multilayer film according to an embodiment. This method MT is part of the manufacturing process of the 3D NAND device.
  • step ST1 is first performed.
  • Step ST1 is a step of preparing the workpiece W.
  • FIG. 12 shows an example of the workpiece W prepared in step ST1.
  • 12 includes a base layer UL, a multilayer film IL, and a mask CM.
  • the underlayer UL can be, for example, a layer made of polycrystalline silicon provided on a substrate.
  • a multilayer film IL is provided on the base layer UL.
  • the multilayer film IL has a structure in which first films IL1 that are oxide films and second films that are nitride films are alternately stacked.
  • the first film IL1 may be a silicon oxide film and the second film IL2 may be a silicon nitride film.
  • the multilayer film IL may be provided with a support that extends in the stacking direction and supports the first film IL1 when the second film IL2 is removed.
  • the mask CM is provided on the multilayer film IL.
  • the multilayer film IL is etched below the opening of the mask CM, and the hole HL is formed in the multilayer film up to the surface of the base layer UL.
  • Such holes HL can be formed, for example, by plasma etching the multilayer film IL through the mask CM.
  • step ST2 the workpiece W prepared in the process ST1 is placed on the upper surface of the movable stage 16.
  • step ST ⁇ b> 3 the driving plate 20 is moved downward to bring the movable stage 16 into contact with the cooling body 14. Thereby, heat exchange is performed between the movable stage 16 and the cooling body 14, and the movable stage 16 is cooled.
  • the movable stage 16 is controlled to the target temperature by adjusting the downward movement amount of the movable stage 16. As a result, the workpiece W on the movable stage 16 is cooled.
  • step ST4 is performed.
  • the processing gas is supplied from the gas supply unit 42, and plasma of the processing gas is generated in the processing container 12.
  • This processing gas is a gas containing fluorine and hydrogen.
  • the second film IL2 is selectively etched from the multilayer film IL by the active species of fluorine and the active species of hydrogen.
  • FIG. 13 shows an example of the object to be processed W in which the second film IL2 is selectively etched from the multilayer film IL in the process ST6.
  • the material of the second film IL2 reacts with the processing gas to generate a reaction product.
  • the reaction product adheres to the first film IL1 and remains as a residue RE in the space generated by removing the second film IL2. If this residue RE remains, for example, when the electrode layer is filled in the space from which the second film IL2 is removed in the subsequent step of the method MT, the electrode layer may not be filled uniformly.
  • step ST5 the process MT5 is then performed in the method MT.
  • step ST6 the movable stage 16 is moved away from the cooling body 14 by moving the drive plate 20 upward.
  • step ST6 in a state where the movable stage 16 is separated from the cooling body 14, the movable stage 16 is heated by the heater HT until the residue RE is vaporized.
  • the movable stage 16 is heated to 200 ° C.
  • the residue RE attached to the first film IL1 is evaporated and discharged to the outside of the processing container 12 through the exhaust pipe 52.
  • the residue RE is removed from the workpiece W.
  • step ST7 it is determined whether or not an end condition is satisfied. If it is determined that the end condition of the step ST7 is not satisfied, the steps ST3 to ST6 of the method MT are repeatedly performed. On the other hand, if it is determined that the end condition is satisfied, the method MT ends.
  • the process of cooling the object W and the process of heating the object W are alternately performed.
  • the workpiece W can be cooled and heated in the same plasma apparatus, so that the throughput of the workpiece W is improved. Can be made.
  • the temperature control mechanism TC when the object to be processed W is cooled, the time required for the temperature of the object to be processed W to converge to the target temperature can be shortened, so that the processing throughput of the object to be processed W can be reduced. Further improvement is possible.
  • the temperature control mechanism of the various embodiments is applied to an inductively coupled plasma etching apparatus, but the object to which the temperature control mechanism is provided is not limited to the inductively coupled plasma etching apparatus.
  • the present invention can be applied to a plasma processing apparatus using a microwave, a capacitively coupled parallel plate plasma etching apparatus, and the like.
  • a heat transfer sheet may be provided between the movable stage 16 and the cooling body 14.
  • This electrothermal sheet is a sheet-like member made of a material having high thermal conductivity, and may be, for example, a silicon-based resin sheet.
  • SYMBOLS 10 Plasma processing apparatus, 12 ... Processing container, 14 ... Cooling body, 14c ... Through-hole, 14h ... Through-hole, 15 ... Refrigerant flow path, 16 ... Movable stage, 18 ... Shaft, 18a ... First flange, 18b ... Second flange, 20 ... drive plate, 20a ... upper surface, 20b ... lower surface, 20h ... through hole, 22 ... drive device, 24 ... elastic body, 26 ... chiller unit, 28 ... electrode, 30 ... drive shaft, 42 ... gas Supply part, 50 ... exhaust part, 52 ... exhaust pipe, 60 ... high frequency antenna, 70A ... high frequency power supply, 70B ...
  • high frequency power supply 80 ... shield member, 100 ... control part, HP ... heater power supply, HT ... heater, IL ... multilayer Film, IL1 ... first film (oxide film), IL2 ... second film (nitride film), S ... processing space, TC ... temperature control mechanism, UL ... underlayer, W ... workpiece, Z ... axis.

Abstract

Selon un mode de réalisation, l'invention porte sur un mécanisme de régulation de température qui est pourvu : d'une platine mobile, qui peut être chauffée et qui présente une surface supérieure sur laquelle un objet à traiter est monté; d'un corps de refroidissement, qui est disposé à demeure au-dessous de la platine mobile et qui peut être refroidi; d'un arbre, qui présente une première extrémité reliée à la platine mobile et une autre extrémité disposée au-dessous du corps de refroidissement, qui s'étend entre ladite première extrémité et ladite autre extrémité et qui possède une première bride, qui est disposée au niveau de ladite autre extrémité, et une seconde bride, qui est disposée entre la première bride et le corps de refroidissement; d'une plaque d'entraînement, qui présente une surface supérieure en regard de la seconde bride et une surface inférieure à l'opposé de la surface supérieure, et qui est disposée entre la première bride et la seconde bride; d'un corps élastique, qui est disposé entre la surface inférieure de la plaque d'entraînement et la première bride; d'un dispositif d'entraînement qui déplace la plaque d'entraînement dans une direction verticale.
PCT/JP2015/076923 2014-10-09 2015-09-24 Mécanisme de régulation de température pour objet à traiter et procédé pour graver sélectivement un film de nitrure d'un film multicouche WO2016056391A1 (fr)

Priority Applications (2)

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KR1020177006371A KR102448244B1 (ko) 2014-10-09 2015-09-24 피처리체의 온도 제어 기구 및 다층막으로부터 질화막을 선택적으로 에칭하는 방법
US15/509,522 US10192774B2 (en) 2014-10-09 2015-09-24 Temperature control device for processing target object and method of selectively etching nitride film from multilayer film

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JP2014207797 2014-10-09
JP2014-207797 2014-10-09
JP2015-112501 2015-06-02
JP2015112501A JP2016082216A (ja) 2014-10-09 2015-06-02 被処理体の温度制御機構、及び多層膜から窒化膜を選択的にエッチングする方法

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CN106200709A (zh) * 2016-08-25 2016-12-07 北新集团建材股份有限公司 一种板材干燥机温度自动控制方法
CN107065967A (zh) * 2017-03-23 2017-08-18 北新集团建材股份有限公司 干燥机温度自动控制方法及控制系统
CN113793819A (zh) * 2021-09-16 2021-12-14 长江存储科技有限责任公司 化学槽及其温度控制方法

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JP3595150B2 (ja) * 1998-02-12 2004-12-02 株式会社小松製作所 温度制御装置および温度制御方法
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Publication number Priority date Publication date Assignee Title
CN106200709A (zh) * 2016-08-25 2016-12-07 北新集团建材股份有限公司 一种板材干燥机温度自动控制方法
CN106200709B (zh) * 2016-08-25 2018-01-09 北新集团建材股份有限公司 一种板材干燥机温度自动控制方法
CN107065967A (zh) * 2017-03-23 2017-08-18 北新集团建材股份有限公司 干燥机温度自动控制方法及控制系统
CN113793819A (zh) * 2021-09-16 2021-12-14 长江存储科技有限责任公司 化学槽及其温度控制方法

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