WO2016037391A1 - 薄膜晶体管阵列基板及其制造方法、液晶显示器 - Google Patents
薄膜晶体管阵列基板及其制造方法、液晶显示器 Download PDFInfo
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- WO2016037391A1 WO2016037391A1 PCT/CN2014/088305 CN2014088305W WO2016037391A1 WO 2016037391 A1 WO2016037391 A1 WO 2016037391A1 CN 2014088305 W CN2014088305 W CN 2014088305W WO 2016037391 A1 WO2016037391 A1 WO 2016037391A1
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- layer
- insulating layer
- thin film
- array substrate
- film transistor
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- 239000010409 thin film Substances 0.000 title claims abstract description 37
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 87
- 239000002184 metal Substances 0.000 claims abstract description 87
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000009413 insulation Methods 0.000 claims abstract description 8
- 238000000206 photolithography Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 9
- 238000005286 illumination Methods 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 description 11
- 238000002161 passivation Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
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- 230000005856 abnormality Effects 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
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- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
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- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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Definitions
- the present invention relates to the field of liquid crystal display technology, and in particular to a thin film transistor array substrate, a method of manufacturing the same, and a liquid crystal display.
- LCD Liquid crystal display
- TFTs Thin film transistors
- the mainstream of the existing TFT manufacturing method of the bottom gate structure is 4 lithography (4 Mask) and 5 lithography (5 Mask).
- the 5Mask process mainly includes gate electrode lithography, active layer lithography, source/drain lithography (S/D Mask), via hole lithography (Via Hole Mask) and pixel electrode lithography. (Pixel Mask).
- a Thin Film Deposition process an etching process including Dry Etch and Wet Etch, and a lift-off process were respectively performed to form 5 times of film deposition ⁇ light.
- the process of engraving ⁇ etching ⁇ stripping were respectively performed.
- 4Mask process is based on the 5Mask process, using Gray Tone Mask or Half Tone Mask or SSM (Single Slit Mask) process, active layer lithography (Active Mask)
- Active Mask active layer lithography
- S/D Mask The source/drain lithography (S/D Mask) is combined into a Mask, and the original Active Mask and S/D Mask functions are completed by adjusting the Etch process, that is, the Mask process is achieved twice by a Mask process.
- the thin film transistor array substrate 20 includes a gate wiring region 20a, a data wiring region 20b, and a pixel region 20c.
- the thin film transistor array substrate 20 includes a gate electrode metal layer 22, a gate electrode insulating layer 23, an active layer 24 formed of amorphous silicon (a-Si), and a source electrode on the active layer 24, which are sequentially formed on the glass substrate 21.
- a-Si amorphous silicon
- a metal layer 25a and a drain electrode metal layer 25b a passivation layer 26, a passivation layer via 27 formed over the drain electrode metal layer 25b and formed on the passivation layer 26, and a transparent pixel electrode (ie, ITO (Indium Tin Oxide) Indium tin) electrode layer 28, wherein transparent pixel electrode layer 28 is in contact with drain electrode metal layer 25b through passivation layer via 27.
- ITO Indium Tin Oxide
- the data wiring region 20b includes a gate electrode insulating layer 23 sequentially formed on the glass substrate 21, an active layer 24 formed of amorphous silicon (a-Si), a source electrode metal layer 25a on the active layer 24, and a passivation layer
- the pixel region 20c includes a gate electrode insulating layer 23 sequentially formed on the glass substrate 21, an active layer 24 formed of amorphous silicon (a-Si), a source electrode metal layer 25a on the active layer 24, and blunt
- the amorphous silicon forming the active layer 24 is a photosensitive semiconductor material, it generates a photocurrent under high-intensity illumination of the backlight provided by the backlight module of the liquid crystal display, thereby providing the transparent pixel electrode layer 28 to the liquid crystal pixel.
- the pixel voltage changes, eventually causing an abnormality in the display of the liquid crystal display, especially in the performance test when there is a serious image sticking (Image Sticking) phenomenon.
- an object of the present invention is to provide a thin film transistor array substrate including a pixel region and a data wiring region, wherein the thin film transistor array substrate further includes a transparent layer formed in the pixel region a pixel electrode layer and a first metal layer, a first insulating layer, an amorphous silicon layer, a second metal layer, and a second insulating layer formed in the pixel region and the data wiring region, wherein the first insulation a layer covering the first metal layer, the amorphous silicon layer, the second metal layer and the second insulating layer are sequentially formed on the first insulating layer, and the transparent pixel electrode layer is formed by A via in the second insulating layer of the pixel region is in contact with a second metal layer of the pixel region.
- the thin film transistor array substrate further includes a color resist layer formed between the first insulating layer and the amorphous silicon layer.
- the color resist layer is a red color resist layer or a green color resist layer or a blue color resist layer.
- Another object of the present invention is to provide a method of fabricating a thin film transistor array substrate, comprising the steps of: A) forming a first metal layer in a pixel region and a data wiring region by using a first photolithography mask; B) depositing An insulating layer; C) forming an amorphous silicon layer and a second metal layer on the first insulating layer by using the second photolithographic mask; D) depositing a second insulating layer; and E) using a third photolithographic mask Forming a via hole in the second insulating layer of the pixel region; F) forming a transparent pixel electrode layer on the second insulating layer of the pixel region by using a fourth photolithography mask, wherein the transparent pixel electrode layer passes The via is in contact with the second metal layer of the pixel region.
- the manufacturing method further includes the step of depositing a color resist layer on the first insulating layer.
- the color resist layer is a red color resist layer or a green color resist layer or a blue color resist layer.
- Still another object of the present invention is to provide a liquid crystal display comprising the above-described thin film transistor array substrate.
- the present invention forms a first metal layer under the amorphous silicon layer formed of amorphous silicon. Since the first metal layer is formed of an opaque metal material, it can block the high intensity of the backlight provided by the backlight module of the liquid crystal display. The light is prevented from directly irradiating onto the amorphous silicon layer formed of amorphous silicon, and the amorphous silicon layer formed of the amorphous silicon does not generate photocurrent, thereby not affecting the pixel voltage supplied to the liquid crystal pixel by the transparent pixel electrode layer. Furthermore, the abnormality of the display screen of the liquid crystal display is not caused, that is, the image sticking phenomenon does not occur on the display screen of the liquid crystal display.
- a color resist layer is formed between the first insulating layer and the amorphous silicon layer formed of amorphous silicon. Since the dielectric constant of the color resist layer is small, the thickness is thick, thereby increasing the first metal layer and The distance between the second metal layers greatly reduces the capacitance between the first metal layer and the second metal layer, thereby avoiding the phenomenon of insufficient charging or mischarging of the pixels due to the serious delay effect of the resistors and capacitors, thereby improving the display quality.
- FIG. 1 is a front view of a prior art thin film transistor array substrate fabricated by four-time lithography intention
- Figure 2 is a cross-sectional view taken along line A-A of Figure 1;
- FIG. 3 is a front elevational view of a thin film transistor array substrate in accordance with an embodiment of the present invention.
- Figure 4 is a cross-sectional view taken along line B-B of Figure 3;
- FIG. 5 is a flow chart showing a method of fabricating a thin film transistor array substrate according to an embodiment of the present invention
- FIG. 6 is a schematic structural view of a liquid crystal display according to an embodiment of the present invention.
- FIG. 3 is a front elevational view of a thin film transistor array substrate in accordance with an embodiment of the present invention.
- Figure 4 is a cross-sectional view taken along line B-B of Figure 3.
- a Thin Film Transistor (TFT) array substrate 100 includes a gate wiring region 100a, a data wiring region 100b, and a pixel region 100c.
- the thin film transistor array substrate 100 further includes a first metal layer (ie, a gate metal layer) 120 sequentially formed on a substrate (eg, a transparent glass substrate) 110, and a first covering the first metal layer 120
- a first metal layer ie, a gate metal layer
- An insulating layer ie, a gate insulating layer 130
- an amorphous silicon layer ie, an active layer
- a second metal layer 150 on the amorphous silicon layer 140 wherein
- the second metal layer 150 in the pixel region 100c is a drain electrode metal layer, and is located in the gate wiring region 100a or data.
- the second metal layer 150 of the wiring region 100b is a source electrode metal layer), a second insulating layer (or passivation layer) 160, a via 170 formed over the drain electrode metal layer and formed on the second insulating layer 160, and transparent A pixel electrode (ie, an ITO (Indium Tin Oxide)) layer 180, wherein the transparent pixel electrode layer 180 is in contact with the drain electrode metal layer through the via 170.
- transparent A pixel electrode ie, an ITO (Indium Tin Oxide)
- the gate wiring region 100a includes a first metal layer 120, a first insulating layer 130, an amorphous silicon layer 140 formed of amorphous silicon, and an amorphous silicon layer 140 which are sequentially formed on the substrate 110.
- the second metal layer 150 ie, the source electrode metal layer on the amorphous silicon layer 140
- the data wiring region 100b includes a first metal layer 120 sequentially formed on the substrate 110, a first insulating layer 130, an amorphous silicon layer 140 formed of amorphous silicon, and a second metal layer 150 on the amorphous silicon layer 140 (ie, A source electrode metal layer on the amorphous silicon layer 140) and a second insulating layer 160.
- the pixel region 100c includes a first metal layer 120 sequentially formed on the substrate 110, a first insulating layer 130, an amorphous silicon layer 140 formed of amorphous silicon, and a second metal layer 150 on the amorphous silicon layer 140 (ie, non- a drain electrode metal layer on the crystalline silicon layer 140), a second insulating layer 160, a via 170 formed over the drain electrode metal layer and formed on the second insulating layer 160, and a transparent pixel electrode layer 180, wherein the transparent pixel electrode layer 180 is in contact with the drain electrode metal layer through via 170.
- the first metal layer 120 is formed under the amorphous silicon layer 140 formed of amorphous silicon in each region, and since the first metal layer 120 is formed of a light-tight metal material, the liquid crystal can be blocked.
- the high-intensity light of the backlight provided by the backlight module of the display avoids direct irradiation onto the amorphous silicon layer 140 formed of amorphous silicon, and the amorphous silicon layer 140 formed of amorphous silicon does not generate photocurrent, thereby not affecting
- the transparent pixel electrode layer 28 supplies the pixel voltage to the liquid crystal pixel, thereby causing no abnormality in the display screen of the liquid crystal display, that is, the image sticking phenomenon does not occur on the liquid crystal display display screen.
- the thin film transistor array substrate 100 further includes a color resist layer 190 formed between the first insulating layer 130 and the amorphous silicon layer 140 formed of amorphous silicon. That is, a color resist layer 190 is formed between the first insulating layer 130 in each region and the amorphous silicon layer 140 formed of amorphous silicon. Since the dielectric constant of the color resist layer 190 is small, the thickness is thick, thereby increasing the distance between the first metal layer 120 and the second metal layer 150, and between the first metal layer 120 and the second metal layer 150. The capacitance is greatly reduced, and the phenomenon that the pixel is insufficiently charged or mischarged due to the serious delay effect of the resistor and capacitor is avoided, and the display quality is improved.
- the color resist layer 190 may be one of a red color resist layer, a green color resist layer, and a blue color resist layer.
- FIG. 5 is a flow chart showing a method of fabricating a thin film transistor array substrate according to an embodiment of the present invention.
- the first metal layer 120 is formed in the gate wiring region 100a, the pixel region 100c, and the data wiring region 100b by the first photolithography mask.
- the specific method of step 210 is: depositing a first metal film layer on the substrate 110, exposing, developing, and wet etching and stripping the first metal film layer by using the first photolithography mask to form the first metal layer 120. , that is, the gate electrode metal layer.
- the metal material used for the first metal film layer may be, for example, tantalum (Ta), molybdenum tantalum (MoTa), molybdenum tungsten (MoW), or aluminum (Al).
- a first insulating layer 130 is deposited.
- the first insulating layer 130 is also referred to as a gate electrode insulating layer, which is deposited on the first metal layer 120 of each region and the substrate 110 after the first metal layer 120 is peeled off.
- the amorphous silicon layer 140 and the second metal layer 150 are sequentially formed on the first insulating layer 130 by using the second photolithography mask.
- the second metal layer 150 formed in the gate wiring region 100a and the data wiring region 100b is a source electrode metal layer
- the second metal layer 150 formed in the pixel region 100c is a drain electrode metal layer.
- the specific method of the step 240 is: sequentially depositing an amorphous silicon film layer and a second metal film layer on the first insulating layer 130, exposing, developing, and wet etching, dry etching using the second photolithography mask. After the peeling, an amorphous silicon layer (ie, active layer) 140 and a second metal layer 150 are formed.
- a second insulating layer 160 is deposited.
- the second insulating layer 160 is also referred to as a passivation layer, which is deposited on the second metal layer 150 of each region and the first insulating layer 130 after the amorphous silicon layer 140 and the second metal layer 150 are stripped.
- step 260 vias 170 are formed in the second insulating layer 160 of the pixel region 100c using a third photolithographic mask.
- the specific method of the step 260 is that the second insulating layer 160 can be exposed, developed, and dry etched and stripped by using a third photolithography mask to form via holes in the second insulating layer 160 of the pixel region 100c. 170.
- a transparent pixel electrode (ie, an ITO (Indium Tin Oxide)) layer 180 is formed on the second insulating layer 160 of the pixel region 100c by using a fourth photolithography mask, wherein the transparent pixel electrode Layer 180 is in contact with second metal layer 150 (i.e., drain electrode metal layer) of pixel region 100c through via 170.
- the specific method of step 270 is: sinking on the second insulating layer 160
- the transparent pixel electrode film layer is formed, and the transparent pixel electrode film layer of the non-pixel region 100c is removed by exposure, development, wet etching, and stripping using a fourth photolithography mask, and the transparent pixel electrode film layer of the pixel region 100c is retained.
- the transparent pixel electrode layer 180 is formed on the second insulating layer 160 of the pixel region 100c.
- the method of manufacturing the thin film transistor array substrate according to the embodiment of the present invention further includes step 230.
- a color resist layer 190 is deposited on the first insulating layer 130.
- a color resist layer 190 is deposited on the first insulating layer 130 of each region.
- the color resist layer 190 may be one of a red color resist layer, a green color resist layer, and a blue color resist layer.
- FIG. 6 is a schematic structural view of a liquid crystal display according to an embodiment of the present invention.
- a liquid crystal display includes a liquid crystal display panel and a backlight module 400 disposed opposite to the liquid crystal display panel, wherein the backlight module 400 provides a display light source to the liquid crystal display panel to make the liquid crystal
- the display panel displays the image by the light provided by the backlight module 400.
- the liquid crystal display panel has the following configuration: the thin film transistor array substrate 100; the second substrate 200 (ie, the color filter substrate), which includes a black matrix and an alignment layer, and the like; the liquid crystal layer 300 is sandwiched between the thin film transistor array substrate 100. And the second substrate 200; and the thin film transistor array substrate 100 and the second substrate 200 are arranged to face each other.
- the second substrate 200 used in the present invention is the same as the prior art, the specific structure thereof can be referred to the related prior art, and details are not described herein again.
- the backlight module 400 of the present embodiment is also the same as the backlight module in the conventional liquid crystal display. Therefore, the specific structure can also refer to the related prior art, and details are not described herein again.
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Abstract
Description
Claims (9)
- 一种薄膜晶体管阵列基板,包括像素区域及数据布线区域,其中,所述薄膜晶体管阵列基板还包括形成在所述像素区域中的透明像素电极层及形成在所述像素区域和所述数据布线区域中的第一金属层、第一绝缘层、非晶硅层、第二金属层、第二绝缘层,其中,所述第一绝缘层覆盖所述第一金属层,所述非晶硅层、所述第二金属层和所述第二绝缘层依序形成在所述第一绝缘层上,所述透明像素电极层通过形成在所述像素区域的第二绝缘层中的过孔与所述像素区域的第二金属层接触。
- 根据权利要求1所述的薄膜晶体管阵列基板,其中,所述薄膜晶体管阵列基板还包括色阻层,形成在所述第一绝缘层与所述非晶硅层之间。
- 根据权利要求2所述的薄膜晶体管阵列基板,其中,所述色阻层为红色色阻层或绿色色阻层或蓝色色阻层。
- 一种薄膜晶体管阵列基板的制造方法,其中,包括步骤:A)利用第一光刻掩膜板在像素区域和数据布线区域中形成第一金属层;B)沉积第一绝缘层;C)利用第二光刻掩膜板在第一绝缘层上形成非晶硅层及第二金属层;D)沉积第二绝缘层;E)利用第三光刻掩膜板在所述像素区域的第二绝缘层中形成过孔;F)利用第四光刻掩膜板在所述像素区域的第二绝缘层上形成透明像素电极层,其中,所述透明像素电极层通过所述过孔与所述像素区域的第二金属层接触。
- 根据权利要求4所述的制造方法,其中,在执行步骤C)之前,所述制造方法还包括步骤:在所述第一绝缘层上沉积色阻层。
- 根据权利要求5所述的制造方法,其中,所述色阻层为红色色阻层或绿色色阻层或蓝色色阻层。
- 一种液晶显示器,其中,包括薄膜晶体管阵列基板、与该薄膜晶体管阵列基板相对设置的第二基板以及夹设于所述薄膜晶体管阵列基板与所述第二基板之间的液晶层,其中,所述薄膜晶体管阵列基板包括像素区域、数据布线区域、形成在所述像素区域中的透明像素电极层以及形成在所述像素区域和所述数据布线区域中的第一金属层、第一绝缘层、非晶硅层、第二金属层、第二绝缘层,其中,所述第一绝缘层覆盖所述第一金属层,所述非晶硅层、所述第二金属层和所述第二绝缘层依序形成在所述第一绝缘层上,所述透明像素电极层通过形成在所述像素区域的第二绝缘层中的过孔与所述像素区域的第二金属层接触。
- 根据权利要求7所述的液晶显示器,其中,所述薄膜晶体管阵列基板还包括色阻层,形成在所述第一绝缘层与所述非晶硅层之间。
- 根据权利要求8所述的液晶显示器,其中,所述色阻层为红色色阻层或绿色色阻层或蓝色色阻层。
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GB1702752.5A GB2543997B (en) | 2014-09-12 | 2014-10-10 | Thin film transistor array substrate and fabricating method thereof, and liquid crystal display |
JP2017513130A JP2017526978A (ja) | 2014-09-12 | 2014-10-10 | 薄膜トランジスタアレイ基板、及びその製造方法、液晶表示装置 |
RU2017107744A RU2666815C1 (ru) | 2014-09-12 | 2014-10-10 | Подложка матрицы тонкопленочных транзисторов и способ ее изготовления, и жидкокристаллический дисплей |
US14/401,105 US9536902B2 (en) | 2014-09-12 | 2014-10-10 | Method of fabricating a thin film transistor substrate using a plurality of photo masks and liquid crystal display |
DE112014006948.5T DE112014006948T5 (de) | 2014-09-12 | 2014-10-10 | Dünnschichttransistor-Arraysubstrat, ein entsprechendes Herstellungsverfahren sowie eine entsprechende Flüssigkristallanzeige |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200411304A (en) * | 2002-12-24 | 2004-07-01 | Quanta Display Inc | TFT LCD and manufacturing method thereof |
US20040125262A1 (en) * | 2002-12-26 | 2004-07-01 | So-Haeng Cho | Array substrate and liquid crystal display device including the same |
US6869833B1 (en) * | 2004-03-16 | 2005-03-22 | Quanta Display Inc. | Method of manufacturing a thin film transistor of a liquid crystal display |
TW200517752A (en) * | 2003-11-26 | 2005-06-01 | Hannstar Display Corp | Manufacturing method of liquid crystal display (LCD) |
CN1991465A (zh) * | 2005-12-28 | 2007-07-04 | Lg.菲利浦Lcd株式会社 | 面内切换型液晶显示装置用阵列基板的制造方法 |
CN103178119A (zh) * | 2013-03-25 | 2013-06-26 | 京东方科技集团股份有限公司 | 阵列基板、阵列基板制备方法以及显示装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4551049B2 (ja) * | 2002-03-19 | 2010-09-22 | 三菱電機株式会社 | 表示装置 |
TW594231B (en) * | 2002-11-20 | 2004-06-21 | Hannstar Display Corp | A method of utilizing color photoresist to form black matrix and spacers on a control circuit substrate |
KR100905472B1 (ko) * | 2002-12-17 | 2009-07-02 | 삼성전자주식회사 | 박막 트랜지스터 어레이 기판 및 이를 포함하는 액정 표시장치 |
KR101363714B1 (ko) * | 2006-12-11 | 2014-02-14 | 엘지디스플레이 주식회사 | 유기 박막트랜지스터, 그 제조 방법, 이를 이용한 정전기방지 소자, 액정표시장치 및 그 제조 방법 |
US7808595B2 (en) * | 2007-04-02 | 2010-10-05 | Lg Display Co., Ltd. | Array substrate for liquid crystal display device and manufacturing method of the same |
WO2009104346A1 (ja) * | 2008-02-21 | 2009-08-27 | シャープ株式会社 | アクティブマトリクス基板及び液晶表示装置 |
KR101472849B1 (ko) * | 2008-05-09 | 2014-12-15 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판, 이의 제조 방법 및 이를 갖는액정표시패널 |
KR101448000B1 (ko) * | 2008-08-26 | 2014-10-14 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
CN102034750B (zh) * | 2009-09-25 | 2015-03-11 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法 |
KR101719484B1 (ko) * | 2010-10-04 | 2017-03-27 | 삼성디스플레이 주식회사 | 표시 기판 및 이를 포함하는 표시 장치 |
JP2013024996A (ja) * | 2011-07-19 | 2013-02-04 | Japan Display Central Co Ltd | 液晶表示装置 |
CN102636926A (zh) * | 2011-11-02 | 2012-08-15 | 深圳市华星光电技术有限公司 | 液晶显示面板及其制造方法 |
CN104299972B (zh) * | 2014-09-12 | 2018-07-27 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及其制造方法、液晶显示器 |
-
2014
- 2014-09-12 CN CN201410466954.1A patent/CN104299972B/zh active Active
- 2014-10-10 JP JP2017513130A patent/JP2017526978A/ja active Pending
- 2014-10-10 RU RU2017107744A patent/RU2666815C1/ru active
- 2014-10-10 WO PCT/CN2014/088305 patent/WO2016037391A1/zh active Application Filing
- 2014-10-10 US US14/401,105 patent/US9536902B2/en active Active
- 2014-10-10 DE DE112014006948.5T patent/DE112014006948T5/de not_active Ceased
- 2014-10-10 KR KR1020177009659A patent/KR20170055986A/ko not_active Application Discontinuation
- 2014-10-10 GB GB1702752.5A patent/GB2543997B/en active Active
-
2016
- 2016-12-30 US US15/394,888 patent/US9780221B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200411304A (en) * | 2002-12-24 | 2004-07-01 | Quanta Display Inc | TFT LCD and manufacturing method thereof |
US20040125262A1 (en) * | 2002-12-26 | 2004-07-01 | So-Haeng Cho | Array substrate and liquid crystal display device including the same |
TW200517752A (en) * | 2003-11-26 | 2005-06-01 | Hannstar Display Corp | Manufacturing method of liquid crystal display (LCD) |
US6869833B1 (en) * | 2004-03-16 | 2005-03-22 | Quanta Display Inc. | Method of manufacturing a thin film transistor of a liquid crystal display |
CN1991465A (zh) * | 2005-12-28 | 2007-07-04 | Lg.菲利浦Lcd株式会社 | 面内切换型液晶显示装置用阵列基板的制造方法 |
CN103178119A (zh) * | 2013-03-25 | 2013-06-26 | 京东方科技集团股份有限公司 | 阵列基板、阵列基板制备方法以及显示装置 |
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KR20170055986A (ko) | 2017-05-22 |
JP2017526978A (ja) | 2017-09-14 |
GB2543997A (en) | 2017-05-03 |
RU2666815C1 (ru) | 2018-09-12 |
CN104299972B (zh) | 2018-07-27 |
RU2017107744A (ru) | 2018-09-18 |
US20160079284A1 (en) | 2016-03-17 |
US9536902B2 (en) | 2017-01-03 |
GB201702752D0 (en) | 2017-04-05 |
DE112014006948T5 (de) | 2017-05-24 |
US20170110593A1 (en) | 2017-04-20 |
GB2543997B (en) | 2020-08-19 |
CN104299972A (zh) | 2015-01-21 |
US9780221B2 (en) | 2017-10-03 |
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