WO2016024159A1 - Monocristaux d'halogénure organométallique pérovskites ayant une faible densité de défauts et leurs procédés de préparation - Google Patents

Monocristaux d'halogénure organométallique pérovskites ayant une faible densité de défauts et leurs procédés de préparation Download PDF

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WO2016024159A1
WO2016024159A1 PCT/IB2015/001502 IB2015001502W WO2016024159A1 WO 2016024159 A1 WO2016024159 A1 WO 2016024159A1 IB 2015001502 W IB2015001502 W IB 2015001502W WO 2016024159 A1 WO2016024159 A1 WO 2016024159A1
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methylammonium
single crystal
lead
tin
bromide
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PCT/IB2015/001502
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Osman M. BAKR
Dong Shi
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King Abdullah University Of Science And Technology
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Priority to US15/503,544 priority Critical patent/US10483046B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
    • H01G9/2009—Solid electrolytes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • An embodiment of the present disclosure provides for a method of making a single crystal, among others, that includes: providing a first reservoir including a first liquid, and a second reservoir including a second liquid, wherein the first reservoir and second reservoir are separated by a boundary so that the first liquid and the second liquid do not contact one another, wherein the first reservoir and the second reservoir are in a closed system; allowing for vapor diffusion of the second liquid into the first liquid to form a modified first liquid; and precipitating out an organometallic halide perovskite single crystal in the first reservoir.
  • the organometallic halide perovskite single crystal has the following formula: AMX 3 , wherein A is an organic cation, M is selected from the group consisting of: Pb, Sn, Cu, Ni, Co, Fe, Mn, Pd, Cd, Ge, or Eu, and X is a halide.
  • the organometallic halide perovskite single crystal can be: methylammonium lead chloride (MAPbCI 3 ), methylammonium lead iodide (MAPbl 3 ), methylammonium lead bromide (MAPbBr 3 ), formamidinium lead chloride (FAPbCI 3 ), formamidinum lead bromide (FAPbBr 3 ), formamidinum lead iodide (FAPbl 3 ), methylammonium tin chloride (MASnCI 3 ), methylammonium tin bromide (MASnBr 3 ), methylammonium tin iodide (MASnl 3 ), formamidinium tin chloride (FASnCI 3 ), formamidinium tin bromide (FASnBr 3 ), and formamidinium tin iodide (FASnl 3 ).
  • MAPbCI 3 methylammonium lead chloride
  • MAPbl 3 methylam
  • An embodiment of the present disclosure provides for a composition, among others, that includes: a single crystal organometallic halide perovskite having a first dimension of about 1 mm to 8 mm and a thickness of about 0.2 to 2 mm, wherein the organometallic halide perovskite single crystal has the following formula: AMX 3 , wherein A is an organic cation, M is selected from the group consisting of: Pb, Sn, Cu, Ni, Co, Fe, Mn, Pd, Cd, Ge, or Eu, and X is a halide.
  • the single crystal organometallic halide perovskite has a trap-state density of about 1 x 10 10 cm “3 to 2 x 10 10 cm “3 , wherein the single crystal organometallic halide perovskite has a long charge-carrier diffusion length of about 16 to 18 ⁇ .
  • Figures 1 .1 A-D illustrates a schematic diagram of the crystallization process.
  • FIG. 1 .1 B Photographic images of the as-grown MAPbBr 3 single-crystals.
  • Fig. 1 .1 C Refined single-crystal structure of the as-grown MAPbBr 3 crystals.
  • Fig. 1 .1 D Experimental and calculated powder XRD profile of the as-grown MAPbBr 3 crystals, confirming 100% phase (cubic) purity. Zoom-in view of experimental (300) diffraction was inserted.
  • Figures 1 .2A-B illustrate normalized absorption and PL spectra: Fig. 1 .2A) illustrates MAPbBr 3 single-crystal in mother liquor, Fig. 1 .2B) illustrates crystalline MAPbBr 3 thin films. The PL was recorded at excitation wavelength of 480 nm for each case. Insets in Fig. 1 .2A) illustrate photographs of the as-grown single-crystals.
  • Figures 1 .3A-E illustrate carrier mobility and lifetime measurements.
  • Fig. 1 .3A Time-of-flight traces showing the transient current I(t) following
  • Figure 1 .4 illustrates transient absorption spectra of the thin film (top panel) and single-crystal (middle panel) of MAPbX 3 .
  • In the lower panel is the normalized time profile of transient absorption of the thin film (red dots) and single-crystal (black dots) of MAPbX 3 Measured at 440 nm excitation.
  • the solid line is the calculated signal.
  • Figure 1 .5 illustrates the Current-Voltage trace and trap density.
  • Characteristic current (/) vs. voltage (V) trace (purple markers) showing three different regimes: (i) Ohmic (0.1 -3 V), with linear voltage dependence (I ⁇ V, blue line); (ii) trap-filled limit (TFL, 3-7 V), with a steep power-like increase in current ⁇ I ⁇ V S - 9 , green line); (iii) space-charge-limited-current (SCLC, > 7 V), which is quadratic with the applied voltage ⁇ I ⁇ V 2 , gold line).
  • PL photoluminescence
  • Figure 1 .9 illustrates photographs of the as-grown MAPbl 3 single-crystals at room temperature.
  • Figures 2.1A-B illustrate crystal growth and diffraction.
  • Fig. 2.1 A Schematic diagram of the crystallization process.
  • Fig. 2.1 B Experimental and calculated powder XRD profiles confirming the phase purity of the room-temperature grown MAPbX 3 crystals. Single crystal XRD data are given in SM.
  • Figures 2.2A-B illustrate steady state absorbance and photoluminescence.
  • Fig. 2.2A MAPbBr 3 single crystal.
  • Fig. 2.2B MAPbl 3 single crystal. Insets:
  • FIG. 2.3A-F illustrate carrier mobility and lifetime measurements.
  • FIG. 2.3B Linear fit of the transit time vs. inverse voltage V '
  • FIG. 2.3C Transient absorption in MAPbBr 3 crystals, evaluated at 590 nn, showing a fast component ( ⁇ 74 ⁇ 5 ns) together with a slower decay ( ⁇ 978 ⁇ 22 ns).
  • Figures 2.4A-B illustrate Current-Voltage traces and trap density.
  • Characteristic current (/) vs. voltage (V) trace (purple markers) showing three different regimes for (Fig. 2.4A) MAPbBr3 (at 300K) and (Fig. 2.4AB) MAPbl3 (at 225 K).
  • a linear ohmic regime (I ⁇ V, blue line) is followed by the trap-filled regime, marked by a steep increase in current (I ⁇ V n>3 , green line).
  • the MAPbBr3 trace shows a trap- free Child's regime (I ⁇ V 2 , green line) at high voltages.
  • Figures 2.5A-B illustrate photograph of a batch of the as-grown MAPbBr 3 (Fig. 2.5A) and MAPbl 3 (Fig. 2.5B) single crystals obtained within one week.
  • Figure 2.6 illustrates static absorbance and PL spectrum of MAPbl 3 thin films.
  • Excitation wavelength of 480 nm was used to record the PL.
  • the main peak occurring at 540 nm in thin films may stem from the low-dimensional structurally coherent units within the MAPbBr 3 film, whereas the noticeable peak at longer wavelength around 580 nm may be attributed to the intrinsic PL of the fully crystallized three-dimensional MAPbBr 3 lattice which is less tight in thin films than in single crystals.
  • Other PL signals appearing around 620 nm and 650 nm may originate from sub gap trap states (43).
  • Figure 2.7 illustrates the extraction of the optical band gap of MAPbBr 3 single crystal.
  • the optical bandgap is extracted by using the relation:
  • FIGs 2.10A-C illustrate transient absorption spectra.
  • Fig. 2.10C The normalized time profile of transient absorption of the thin film (red dots) and single crystal (black dots) of MAPbBr 3 Measured at 480 nm excitation. The solid line is the calculated signal.
  • the decay of the excited state due to the electron hole recombination of single crystals is much longer than the thin film (Fig. 2.10C).
  • the observed decay can be attributed to trap-assisted recombination of charge carriers, indicating that substantially fewer defect trap-states are present in the single crystal relative to the thin film. This finding is consistent with the long carrier lifetimes extracted from photoluminescence experiments on single crystals.
  • Fig. 2.1 1A illustrates time of flight measurements of MAPbBr 3
  • Fig. 2.1 1 B illustrates the lower mobility, which are shown for completeness. A small variability between the samples is seen.
  • Figure 2.12 illustrates the space charge limited current analysis for a MAPbl 3 single crystal of dimensions: 1 .63 mm x 2.74 mm x 2.74 mm.
  • Figure 2.13 illustrates the defect formation energies in case of Br-rich growth conditions. No vacancies are displayed due to their shallow nature.
  • Figure 2.14 illustrates the defect formation energies in case of Br-poor growth conditions. No vacancies are displayed due to their shallow nature.
  • Figure 2.15 illustrates the MAPbBr 3 Density of States (DOS).
  • Embodiments of the present disclosure will employ, unless otherwise indicated, techniques of chemistry, material science, synthetic organic chemistry, and the like, which are within the skill of the art. Such techniques are explained fully in the literature.
  • organometallic halide perovskites methods of making, methods of use, devices incorporating single crystal organometallic halide perovskites, and the like.
  • Embodiments of the present disclosure provide for methods of making single crystal organometallic halide perovskites that is simple and requires little or no energy input. In addition, other methods can not be used to form single crystal organometallic halide perovskites having dimensions at the micron-scale level.
  • single crystal organometallic halide perovskites formed using embodiments of the present disclosure can have superior characteristics as compared to state-of-the-art crystalline thin films prepared by other methods and these characteristic can include charge carrier mobility, lifetime, trap-state density, and/or diffusion length.
  • embodiments of the single crystal organometallic halide perovskite can be used in photovoltaic devices such as perovskite-type photovoltaic devices, where superior properties of the single crystal organometallic halide perovskite can be used to achieve enhanced photocurrent generation, collection, and overall power conversion efficiency.
  • the organometallic halide perovskites can have the following formula: AMX 3 .
  • A can be an organic cation such as alkyl-ammonium (e.g., methylammonium (MA)), formamidinum (FA), 5-ammoniumvaleric acid.
  • M can be a cation or divalent cation of an element such as Pb, Sn, Cu, Ni, Co, Fe, Mn, Pd, Cd, Ge, or Eu.
  • X can be a halide such as CI, Br, F, I, and At.
  • alkyl can refer to hydrocarbon moieties having one to six carbon atoms, linear or branched, substituted or substituted (e.g., a halogen).
  • AMX 3 can be: methylammonium lead chloride (MAPbCI 3 ), methylammonium lead iodide (MAPbl 3 ), methylammonium lead bromide (MAPbBr 3 ), formamidinium lead chloride (FAPbCI 3 ), formamidinum lead bromide (FAPbBr 3 ), formamidinum lead iodide (FAPbl 3 ), methylammonium tin chloride (MASnCI 3 ), methylammonium tin bromide (MASnBr 3 ), methylammonium tin iodide (MASnl 3 ), formamidinium tin chloride (FASnCI 3 ), formamidinium tin bromide (FASnBr 3 ), or formamidinium tin iodide (FASnl 3 ).
  • MAPbCI 3 methylammonium lead chloride
  • MAPbl 3 methylammonium lead bromide
  • the single crystal organometallic halide perovskites having a dimension greater than the micron range have not been previously formed due to limitations in the known processes from making them.
  • the single crystal organometallic halide perovskite can have dimensions greater than 500 microns (e.g., about 500 microns to 10,000 microns or about 500 microns to 5000 microns) or greater than 1000 microns (e.g., about 1000 microns to 10,000 microns or about 1000 microns to 5000 microns).
  • the single crystal organometallic halide perovskites having a dimension greater than the micron range have not been previously formed due to limitations in the known processes from making them.
  • the single crystal organometallic halide perovskite can have dimensions greater than 500 microns (e.g., about 500 microns to 10,000 microns or about 500 microns to 5000 microns) or greater than 1000 microns (e.g., about 1000 microns to 10,000 microns or about 1000
  • organometallic halide perovskite can have one or more dimensions of about 0.1 mm to 10 mm or more.
  • the single crystal organometallic halide perovskite can have the following dimensions: one or more dimensions (e.g., length, width, diameter) of about 1 mm to 10 mm and a thickness of about 0.05 to 3 mm.
  • the single crystal organometallic halide perovskite can have a crustal volume of 100 mm 3 or more.
  • the single crystal organometallic halide perovskite can have the following dimensions: a length of about 1 mm to 10 mm or about 2 mm to 8 mm, a width of about 1 mm to 10 mm or about 2 mm to 8 mm and a thickness of about 0.2 to 2 mm.
  • Embodiments of the single crystal organometallic halide perovskite can have one or more of the following characteristics: larger charge carrier mobility than state-of-the-art crystalline thin films prepared by other methods, larger lifetime than state-of-the-art crystalline thin films prepared by other methods, larger trap-state density than state-of-the-art crystalline thin films prepared by other methods, or longer diffusion length than state-of-the-art crystalline thin films prepared by other methods.
  • the charge carrier mobility can be an order of magnitude larger than state-of-the-art crystalline thin films. In an embodiment, the charge carrier mobility can be about 70 to 150 cm 2 /Vs for MAPbBr 3 . In an embodiment, the expected charge carrier mobility may be about 40 to 100 cm 2 /Vs for MAPbCI 3 . In an embodiment, the expected charge carrier mobility may be about 100 to 220 cm 2 /Vs for MAPbl 3 .
  • the lifetime can be an order of magnitude larger than state-of-the-art crystalline thin films. In an embodiment, the lifetime can be about 150 to 750 ns for MAPbBr 3 . In an embodiment, the expected lifetime may be about 100 to 450 ns for MAPbCl 3 . In an embodiment, the expected lifetime may be about 300 to 1000 ns for MAPbl 3 .
  • the trap-state density can be an order of magnitude larger than state-of-the-art crystalline thin films. In an embodiment, the trap-state density can be about 1 x 10 10 cm “3 to 3 x 10 10 cm “3 for MAPbBr 3 . In an
  • the expected trap-state density may be about 1 x 10 13 cm “3 to 3 x 10 13 cm “3 for MAPbCI 3 . In an embodiment, the expected trap-state density may be about 1 x 10 13 cm “3 to 3 x 10 10 cm “3 for MAPbl 3 .
  • the charge-carrier diffusion length can be an order of magnitude larger than state-of-the-art crystalline thin films. In an embodiment, the charge-carrier diffusion length can be about 7 to 17 ⁇ for MAPbBr 3 . In an embodiment, the expected charge-carrier diffusion length may be about 1 to 10 ⁇ for MAPbCI 3 . In an embodiment, the expected charge-carrier diffusion length may be about 10 to 30 ⁇ for MAPbl 3 .
  • An embodiment of the present disclosure includes a method of making a single crystal, in particular organometallic halide perovskite single crystals as described herein.
  • the method is simple, the component set up is not complex and does not require specialized equipment, the time of reaction is relatively time- efficient, and the reaction requires no-energy input.
  • An embodiment of the present disclosure includes a first reservoir and a second reservoir, each including a liquid (e.g., a first liquid and second liquid, respectively).
  • the first liquid can include a first liquid solvent, a first precursor, and an organic cation precursor.
  • the first liquid solvent can be ⁇ , ⁇ -dimethylformamide (DMF), dimethylsulfoxide (DMSO), gamma- butylrolactone (GBR), or a combination thereof.
  • the first precursor can be a compound that supplies M for the organometallic halide perovskite single crystal (AMX 3 ), where M is defined herein.
  • the first precursor can be a halide salt of M, for example PbBr 2 or SnBr 2 .
  • the concentration of the first precursor in the first liquid can be about 1 to 20 weight %.
  • the organic cation precursor can be a compound that supplies A for the organometallic halide perovskite single crystal (AMX 3 ), where A is defined herein.
  • the organic cation precursor can be a halide salt of A.
  • the organic cation precursor can be methylammonium bromide, methylammonium iodide, methylammonium chloride, formamidinium chloride, formamidinium bromide, or formamidinium iodide.
  • the concentration of the organic cation precursor in the first liquid can be about 1 to 30 weight %.
  • the second liquid can be a second liquid solvent that has a boiling point that is less (e.g., about 70° C or more) than that of the first liquid solvent and is not a solvent for the first precursor or organic cation precursor.
  • the second liquid solvent can be: dichloromethane, chloroform, acetonitrile, toluene, or a combination thereof.
  • the first reservoir and second reservoir are separated by a boundary so that the first liquid and the second liquid do not contact one another.
  • the first reservoir is positioned in the center of second reservoir with a boundary wall separating the first liquid and the second liquid.
  • Other configurations can be used that include a plurality of first reservoirs and a plurality of second reservoirs as long as the first liquid and the second liquid are separated.
  • the first reservoir and the second reservoir can be a single structure or can be separate structures.
  • the first reservoir and the second reservoir can be made of materials that do not impede the formation of the organometallic halide perovskite single crystals, for example, metal, plastic, glass, and the like.
  • the first reservoir and the second reservoir can have dimensions on the millimeter scale to the centimeter scale or larger as needed.
  • the shape of the first reservoir and the second reservoir can be constructed to control the rate formation of organometallic halide perovskite single crystals, dimensions of the organometallic halide perovskite single crystals, and the like.
  • the first reservoir and second reservoir are enclosed by a structure(s) to form a closed system.
  • the structure can be designed to reduce or eliminate exposure of the first liquid and the second liquid to light.
  • the structure can be used to reduce or prevent exposure of the first liquid and the second liquid to contaminants.
  • the structure can be configured to control the temperature and/or pressure to which the first and second liquids are subjected. In general, the temperature is room temperature and the pressure is 1 atm, however, the structure can include equipment (e.g.
  • the structure can be made of materials that do not impede the formation of the organometallic halide perovskite single crystals for example, metal, plastic, glass, and the like.
  • first liquid and the second liquid are disposed in the first reservoir and second reservoir, respectively.
  • the second liquid solvent vaporizes more readily than the first liquid solvent, so that the second liquid solvent diffuses into the first liquid over time (e.g., hours to days) to form a modified first liquid.
  • the vaporization is allowed to occur at room temperature and pressure. In other embodiments, the
  • first precursor and the organic cation precursor are not soluble or only slightly soluble in the second liquid solvent, the first precursor and the organic cation precursor precipitate (e.g., stoichiometrically precipitate) from the modified first liquid as the second liquid solvent diffuses into the first liquid.
  • first precursor and the organic cation precursor precipitate (e.g., stoichiometrically precipitate) from the modified first liquid as the second liquid solvent diffuses into the first liquid.
  • the diffusion rate can be controlled by selection of the first liquid solvent, the second liquid solvent, the temperature, and pressure. In a particular embodiment, the diffusion rate can be controlled by selection of the first liquid solvent and the second liquid solvent.
  • the organometallic halide perovskite single crystals are formed. In an embodiment, the time frame can be about a few hours to about fourteen days or about a day to a about seven days.
  • the single crystal organometallic halide perovskite can be used in a solar cell.
  • Use of single crystal organometallic halide perovskites of the present disclosure in a solar cell can lead to enhanced photocurrent generation and/or collection or the overall power conversion efficiency upon use in
  • MAPbXs methylammonium lead trihalide
  • Hybrid organo-lead trihalide perovskites have the crystal structural formula APbX 3 , where the A-site is occupied by an organic cation (e.g. methylammonium, MA; or formamidinium, FA) and the X-site is occupied by a halide (typically I, Br, and CI). 14 Key to the success of PSCs is the long charge-carrier diffusion length in the absorber perovskite layer, which is a result of the material's high crystalllinity, despite its low-temperature solution-processability.
  • an organic cation e.g. methylammonium, MA; or formamidinium, FA
  • a halide typically I, Br, and CI
  • MAPbBr 3 methylammonium lead bromide
  • MAPbX 3 single- crystals for practical charge carrier mobility and lifetime characterizations, and steady-state optical and electronic measurements.
  • the apparatus used for the crystallization is comprised of two simple vials (or crystallizing dishes) as schematically described in Fig. 1 .1 A.
  • the inner vial (or crystallizing dish) contains a solution of the two precursors MABr and PbBr 2 fully dissolved in a solvent with relatively high boiling point such as ⁇ , ⁇ -dimethylformamide (DMF), while the outer vial (or crystallizing dish) contains a more volatile solvent such as dichloromethane (DCM) which is a non-solvent for the two precursors. Vapor from the outer volatile non-solvent slowly diffuses into the inner solvent at room temperature, gradually decreasing the overall solubility of the two precursors and forcing the product out of the solution in the form of MAPbBr 3 crystals.
  • a solvent with relatively high boiling point such as ⁇ , ⁇ -dimethylformamide (DMF)
  • DCM dichloromethane
  • Figure 1 .1 B is a representative image of some of the large MAPbBr3 single- crystals we routinely obtained.
  • the overall square shape of the as-grown large single-crystals is in excellent agreement with the room-temperature cubic crystal system of MAPbBr 3 perovskite as was confirmed decades ago.
  • Figures 1 .2A-B display a typical normalized absorption and PL spectra of a single- crystal in its mother liquor (Fig. 1 .2Aa) and a crystalline thin film prepared by a solution-processed two-step deposition approach (Fig. 1 .2B).
  • the absorption of the MAPbBr 3 single-crystals exhibits an onset around 575 nm (Fig. 1 .2A) - a red-shift of ⁇ 25 nm compared to that of crystalline thin films (Fig. 1 .2B) that were produced in this work and reported in the literature. 27, 28
  • the single- crystal's steep absorption band edge - resembling a step-function above the band gap - is indicative of a clear band structure with low density of in-gap defect and trap states.
  • the rather flat absorption band in the visible region that is energetically above the bandgap for the single-crystal is also a consequence of the clear band structure and the high symmetry of the room-temperature cubic crystal phase.
  • the absorption of the nanocrystalline thin films presented a differing trend: a noticeably decreasing absorption to lower energy, reaching a valley at 500 nm followed by a strong absorption peak right before the band gap edge.
  • the edge being less steep than its counterpart in the single-crystal spectra (inset in Fig. 1 .2B), as well as the strong peak close to the edge are indicative of the high defect and trap states densities in the thin films as a result of decreased crystallinity.
  • MAPbX 3 is a direct bandgap material
  • the bandgap may be calculated from the absorption spectra by extrapolating the linear region of the absorption edge to the wavelength-axis intercept, as is
  • the bandgap of the as-grown MAPbBr 3 single-crystals was also studied by photoelectron spectroscopy (PES) and inverse photoelectron spectroscopy (IPES) methods.
  • PES photoelectron spectroscopy
  • IPES inverse photoelectron spectroscopy
  • the complete electronic structures of MAPbBr3 single-crystals obtained by a combination of PES and IPES are shown in Fig. 1 .7.
  • the electronic structure is comprised of four spectral features located at -2.3, -2.8, -3.9, and -5.7 eV with the valence band maximum at -3.93eV.
  • the valence band edge appears significantly sharper than that of the respective thin films, 29 whereas the conduction band consists of three spectral features observed at 2.6, 4, and 5.1 eV, and is somewhat look similar to that of the thin films.
  • the electronic bandgap of the crystal is estimated to be 2.37 eV, with the valence band maximum (VBM) positioned at - 1 .82eV and conduction band minimum (CBM) at 0.55eV above the Fermi level, and in a good agreement with the optically estimated bandgap (Fig. 1 .2A-B).
  • VBM valence band maximum
  • CBM conduction band minimum
  • a slightly larger bandgap value via photoemission spectroscopies is to be expected.
  • Optical absorption measurements may result in a slightly underestimate of the actual ground state bandgap because optical excitations leave a hole in the valence band, which through Couiombic interaction, may decrease the observed gap.
  • the emission behavior of MAPbBr 3 single-crystals is also markedly different than thin films (Fig.1 .2A-B).
  • the crystal's PL spectrum shows a single narrow peak at 570 nm with a stokes-shift of only 20 nm from the first absorption peak.
  • the relatively small shift is likely a consequence of the highly restricted vibrational relaxation within the [PbBr 6 ] 4" octahedra which are connected via a corner-sharing network in the three-dimensional cubic lattice.
  • the PL of the MAPbBr 3 thin films reveals multiple features that have qualitatively different origins than the ones observed in the emission spectra of single-crystals.
  • the increased defect and trap state densities in the nanocrystalline thin films, relative to single-crystals, provide more degrees of freedom for vibronic relaxation resulting in a larger stokes shift of 58 nm (Fig. 1 .2B).
  • the mobility of carriers throughout the bulk of the crystalline samples has been measured using a time-of-f light (TOF) technique.
  • TOF probing scheme hinges on a few requirements: (i) a pulsed light excitation with energy larger than the material's bandgap: ⁇ > E g ; (ii) an absorption depth (a 1 ) much smaller than the sample thickness d (ad » 1); (iii) the need for a transparent electrode allowing light illumination on one side; (iv) the RC time constant of the detection circuitry being much smaller than the transit time ⁇ .
  • a top a pulsed laser
  • a drop in the measured current (/) vs. time (t) is observed in the form of a kink: the position of the kink defines the transit time z t .
  • the corresponding experimental traces I(t), for various driving voltages (V), are shown in Fig. 1 .3A, on a bi-logarithmic scale; the transit time is marked by the blue squares and the corresponding values are plotted in the inset as a function of V -1 , and in Fig. 1 .3B as a function of V.
  • organometallic halides for an even greater photovoltaic performance than thin-film- based photovoltaic devices.
  • the time (t) and wavelength (A) resolved PL map I PL (t, X) has been acquired over a time window of 1 ⁇ $ and in the wavelength region around the main band-to-band recombination PL peak at 580 nm ( ⁇ : 500 - 680 nm).
  • the time-dependent PL signal is representative of the transient evolution of the electron-hole population following the impulsive
  • a shoulder can be seen on the low-wavelength side, which is associated to the impulsive background which indeed disappears for longer time scales.
  • a PL temporal profile which is uniquely representative of the internal carrier dynamics in the sample, and is shown Fig. 1 .3E on a logarithmic plot.
  • the corresponding data points are fitted with a bi- exponential decay (black and gray lines) comprised of a fast and a slow dynamics ( ⁇ 152 ns and 726 ns, respectively).
  • crystalline MAPbBr 3 is characterized by a charge transport efficiency which outperforms thin-film-based materials in all three key figures of merit, i.e. mobility, lifetime, and diffusion length.
  • PL decay of the as-prepared crystalline thin films of MAPbBr 3 as shown in Fig. 1 .8. There dynamics were observed with two very fast ones ( ⁇ 1 and ⁇ 17 nm) and a slower one ( ⁇ 20 ns). Convincingly in all cases, the PL decays faster than the single crystals. This suggest large trap-induced recombination rate in the crystalline thin films which are expected to consist of much higher trap state density than the single crystals.
  • V TFL en t d 2 /2ee 0
  • e 0 the vacuum permittivity
  • n t 1.4 x 10 10 cm ⁇ 3
  • the defect-density measured for the room-temperature grown MAPbBr 3 crystals outshines a wide array of established and emerging optoelectronic semiconductors including: GaAs and related compounds (n t ⁇ 10 16 cm ⁇ 3 ); polycrystalline Si (n t ⁇ lO l3 -lO l4 cm ⁇ 3 ) 41 ;
  • the methylammonium bromide (MABr) precursor was synthesized through the reaction of hydrobromide acid (HBr) with methylamine followed by
  • the as-annealed white PbBr 2 thin film was immersed into MABr solution in anhydrous isopropanol (10 mg/mL) for 15 min at room temperature, which yielded a yellow thin film. Finally the as-obtained yellow thin film was gently rinsed with isopropanol and annealed at 80 °C for 1 h.
  • the IPES spectra were obtained by using incident electrons with varying kinetic energy while detecting the emitted photons at a fixed energy (9.7 eV) using a Geiger-Muller detector.
  • the inverse photoemission spectroscopy resolution was limited by an instrumental linewidth of approximately 400 meV.
  • the electron charge neutralizer settings were adjusted for each sample to give a BE of 284.8 eV for the C 1 s line.
  • the ultimate Versa Probe II instrumental resolution was determined to be 0.35 eV using the Fermi edge of the valence band for metallic silver.
  • the resolution with charge compensation system was ⁇ 0.68 eV FWHM on PET. All the spectra were collected at room temperature. All XPS spectra were recorded using PHI software SmartSoft -XPS v2.0 and processed using PHI MultiPack v9.0 and/or CasaXPS v.2.3.14. The experimental setup for TA measurements is detailed elsewhere.
  • Wehrenfennig C Eperon GE, Johnston MB, Snaith HJ, Herz LM. High charge carrier mobilities and lifetimes in organolead trihalide perovskites. Adv Mater 2014, 26(10): 1584-1589. Wehrenfennig C, Liu M, Snaith HJ, Johnston MB, Herz LM. Charge-carrier dynamics in vapour-deposited films of the organolead halide perovskite CH3NH3Pbl3-xClx. Energy Environ Sci 2014, 7(7): 2269-2275.
  • Eperon GE Burlakov VM, Docampo P, Goriely A, Snaith HJ. Morphological Control for High Performance, Solution-Processed Planar Heterojunction Perovskite Solar Cells. Adv Fun Mater 2014, 24(1 ): 151 -157.
  • Methylammonium Lead Iodide Within Mesoporous Titanium Dioxide Active Material in High-Performance Perovskite Solar Cells. Nano Lett 2013, 14(1 ): 127-133.
  • PSCs Solution-processed hybrid organolead trihalide (MAPbXs) perovskite solar cells (PSCs) have now achieved 20.1 % certified power conversion efficiencies (PCE) (1) following a rapid surge of development since perovskite-based devices were reported in 2009 (2).
  • PCE power conversion efficiencies
  • the synthesized crystals were of sufficient quality and macroscopic dimensions to enable a detailed investigation of the optical and charge transport properties.
  • the absorption spectrum from the polycrystalline MAPbBr 3 [Fig. 2.6 (9)] and MAPbl 3 (5) thin films shows a peak near the band gap, which is often attributed to an excitonic transition. This observation is consistent with a substantial amount of disorder and lack of long-range structural coherence in nanostructured thin films (10).
  • both MAPbBr 3 and MAPbl 3 exhibit a narrow photoluminescence (PL) that peaks near the band edge.
  • PL photoluminescence
  • the time-resolved traces are representative of the transient evolution of the electron-hole population following impulsive (At ⁇ 0.7 ns) photoexcitation.
  • Crystalline MAPbX 3 is characterized by a charge transport efficiency that outperforms thin-film-based materials in mobility, lifetime, and diffusion length.
  • the defect density measured for the room-temperature grown MAPbX 3 crystals was superior to a wide array of established and emerging optoelectronic inorganic semiconductors including polycrystalline Si (n t ⁇ 10 13 to 10 14 cm “3 ) (15, 16), CdTe/CdS (n t ⁇ 10 11 to 10 13 cm “3 ) (17), and CIGS (n t ⁇ 10 13 cm “3 ) thin films (18), as well as organic materials such as single-crystal rubrene (n t ⁇ 10 16 cm “3 ) (19) and pentacene (n t ⁇ 10 14 to 10 15 cm “3 ) (20).
  • the crystalline MAPbBr 3 thin films deposited on glass substrate were prepared through a two-step solution processed procedure. (6, 23) A thin layer of PbBr 2 was initially coated onto the glass substrate by spin coating a solution of PbBr 2 in DMF (100 mg/mL). The spin-coated PbBr 2 thin film was then annealed at 100 °C for 30 minutes. Subsequently, the as-annealed white PbBr 2 thin film was immersed into MABr solution in anhydrous isopropanol (10 mg/mL) for 15 minutes at room temperature, which yielded a yellow thin film. Finally the as- obtained yellow thin film was gently rinsed with isopropanol and annealed at 80 °C for 1 hour.
  • MAPbBr 3 Crystallization of MAPbBr 3 .
  • PbBr 2 and MABr (1/1 by molar, 0.2 M) were dissolved in ⁇ , ⁇ -dimethylformamide (DMF).
  • MAPbBr 3 single crystals were grown along with the slow diffusion of the vapor of the anti-solvent dichloromethane (DCM) in to the solution.
  • DCM dichloromethane
  • MAPbBr 3 single crystal enabled us to record its UV-Vis absorbance in transmission mode, while the colorless mother liquor did not absorb in the wavelength region defined in Fig. 2.2, and thus was used as a baseline reference for the absorption measurements. Storing the single crystals in the mother liquor also protects the surface from reconstructions caused by prolonged dewetting or exposure to air. The absorption of MAPb single crystal was recorded in reflection mode.
  • the time-dependent photoluminescence signal is spectrally resolved using a single-grating spectrometer and acquired using a time-correlated detector operated in single-photon-counting mode.
  • y t (tj) are the experimental PL counts (time delays)
  • /(£) is the model fit function
  • N is the total number of points
  • p is the number of free parameters.
  • the model which minimizes the reduced chi-square is the one which attains the maximum likelihood of reproducing the experimental data.
  • Nanosecond pump-probe TA spectroscopy was carried out using an EOS spectrometer to cover the ns to ⁇ time window.
  • the detailed experimental setup of EOS is provided elsewhere (24). Briefly, we employed a white-light continuum probe pulse that was generated by a super continuum source. To generate the excitation pulse, 800 of the Spitfire output is used to pump TOPAS-C two stage parametric amplifier equipped with frequency mixing stages and non-collinear difference frequency generator that allows tuning from 236 to 26000 nm. TOPAS-C output beam at 475 nm is routed via adjustable pinholes, variable neutral density filter, depolarizer, chopper wheel and focusing lens to excite the sample. Pump and probe beams are overlapping spatially and temporally in the sample. Finally, the absorbance change of the probe beam is collected by the ESO spectrometer to record the time-resolved TA spectra.
  • TOF carrier mobility relies on pulsed light excitation with energy larger than the material's bandgap i.e. ⁇ > E g ; an absorption depth much smaller than the sample thickness d; a transparent electrode allowing light illumination on one side; and an RC time constant of the detection circuitry much smaller than the transit time z t .
  • Basis-set superposition error (BSSE) (28, 34) was estimated via the Counterpoise correction method (35) and found to be of the order of 50 meV which is very small and was incorporated into final results.
  • SOC effects have been estimated to give small correction on the order of 0.25 eV since defect formation energies are the ground state properties. Good agreement of the DFT bandgap between experiment and theory is largely attributed to large error cancellation (36, 37).
  • binding energies of various complex defects such as: (i) antisites A B (B occupying the atomic position of A); (ii) vacancies V A (missing A species); (iii) interstitials A t (species A found at a forbidden location in the lattice).
  • the binding energies of Pber and Br Pb antisites at various charged states are given by (42):
  • E b is the defect binding energy
  • the binding energies are given below, in eV (negative means stable, positive means unstable):
  • ⁇ in the oxidation state +1 has a very narrow stability region which only occurs for strongly p-type crystals, and thus singles out Pb ; as the only major deep defect.
  • This defect has a higher formation energy in the case of Br-rich than for Br-poor synthesis (see Fig. 2.13 and 2.14), yielding a final lower density of trap states in the former case.
  • One way to control the richness/poorness of the growth environment is to choose a lead precursor that brings with it an excess of bromide: PbBr 2 , as used in the present work. Altogether, the DFT calculations of formation energies of the major defect states in MAPbBr3 confirms that a Br-rich synthesis leads to a low trap density, as observed
  • ratios, concentrations, amounts, and other numerical data may be expressed herein in a range format. It is to be understood that such a range format is used for convenience and brevity, and thus, should be interpreted in a flexible manner to include not only the numerical values explicitly recited as the limits of the range, but also to include all the individual numerical values or subranges encompassed within that range as if each numerical value and sub-range is explicitly recited.
  • a concentration range of "about 0.1 % to about 5%” should be interpreted to include not only the explicitly recited concentration of about 0.1 wt% to about 5 wt%, but also include individual concentrations (e.g., 1 %, 2%, 3%, and 4%) and the sub-ranges (e.g., 0.5%, 1 .1 %, 2.2%, 3.3%, and 4.4%) within the indicated range.
  • the term "about” can include traditional rounding according to significant figures of the numerical value.
  • the phrase "about 'x' to 'y'" includes “about 'x' to about 'y'".

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Abstract

La présente invention concerne un procédé de fabrication d'un monocristal d'halogénure organométallique pérovskites, ayant la formule : AMX3, dans laquelle A est un cation organique, M est choisi dans le groupe constitué par : le Pb, le Sn, le Cu, le Ni, le Co, le Fe, le Mn, le Pd, le Cd, le Ge, et l'Eu, et X est un halogénure. Le procédé comprend l'utilisation de deux réservoirs contenant des précurseurs différents et permettant la diffusion de vapeur d'un réservoir à l'autre. Une cellule solaire comprenant ledit cristal est également décrite.
PCT/IB2015/001502 2014-08-14 2015-08-12 Monocristaux d'halogénure organométallique pérovskites ayant une faible densité de défauts et leurs procédés de préparation WO2016024159A1 (fr)

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