WO2016015383A1 - 阵列基板及制作方法、显示装置 - Google Patents

阵列基板及制作方法、显示装置 Download PDF

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Publication number
WO2016015383A1
WO2016015383A1 PCT/CN2014/088691 CN2014088691W WO2016015383A1 WO 2016015383 A1 WO2016015383 A1 WO 2016015383A1 CN 2014088691 W CN2014088691 W CN 2014088691W WO 2016015383 A1 WO2016015383 A1 WO 2016015383A1
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Prior art keywords
layer
organic
data line
organic film
array substrate
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PCT/CN2014/088691
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English (en)
French (fr)
Inventor
张九占
王国磊
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to US14/779,109 priority Critical patent/US10180610B2/en
Publication of WO2016015383A1 publication Critical patent/WO2016015383A1/zh
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • Embodiments of the present invention relate to an array substrate, a method of fabricating the same, and a display device.
  • the field of TFT display is developing rapidly, and the development of displays requires thinness, high resolution, high transmittance and the like.
  • the display mode there are mainly modes such as VA, TN, ADS and HADS. Since both ADS and HADS have high aperture ratio and high transmittance, they are more valued by customers.
  • At least one embodiment of the present invention provides an array substrate, a manufacturing method thereof, and a display device, which can improve the transmittance of the display device without affecting display quality.
  • At least one embodiment of the present invention provides an array substrate, including: a substrate substrate, a gate line, a data line, a common electrode layer, and a plurality of gate lines and data lines formed on the base substrate a pixel, and an organic film insulating layer between the common electrode layer and the layer where the data line is located; each of the pixels includes a light transmitting region and an opaque region, and the pattern of the organic film insulating layer is not in the light transmitting region There is an organic film insulating material but at least the organic film insulating material remains in the corresponding region of the data line.
  • a pixel electrode layer is further formed on the array substrate, and an insulating spacer layer is disposed above the pixel electrode layer, and the common electrode layer is disposed above the insulating spacer layer.
  • the organic film insulating layer is located between the insulating spacer layer and the layer in which the data lines are located.
  • the organic film insulating layer completely covers a region corresponding to the data line.
  • At least one embodiment of the present invention provides a display device comprising the array substrate of any of the above.
  • At least one embodiment of the present invention further provides a method for fabricating an array substrate, comprising: forming a gate line, a data line, and a plurality of pixels surrounded by the gate line and the data line on the base substrate. a pattern, each of which includes a light-transmitting region and an opaque region; forming an organic film insulating layer such that the organic film edge layer is patterned to have no organic film insulating material in the light-transmitting region but at least corresponding to the data line The region retains an organic film insulating material; a pattern including a common electrode layer is formed over the organic film insulating layer.
  • the organic insulating layer is exposed through a mask to remove the organic insulating material film of the light transmitting region, but at least in the data line. A film of organic insulating material is retained in the corresponding area.
  • a buffer layer is formed and an organic insulating layer is formed on the buffer layer; the organic insulating layer is exposed through a mask to remove the organic insulating material film of the light-transmitting region However, at least in the corresponding region of the data line, a film of an organic insulating material is retained; and the exposed buffer layer is etched in the light-transmitting region.
  • the organic insulating layer is exposed through a mask to remove the organic insulating layer of the light-transmitting region, and only the organic insulating material film of the corresponding region of the data line is retained.
  • a pixel electrode layer is formed over the organic film insulating layer; an insulating spacer layer is formed over the pixel electrode layer; and the common electrode layer is formed over the insulating spacer layer .
  • 1a is a schematic structural view of an array substrate
  • Figure 1b is a schematic cross-sectional view taken along line A-A of Figure 1a;
  • FIG. 2a is a schematic structural view of an array substrate according to an embodiment of the invention.
  • Figure 2b is a schematic cross-sectional view taken along line A-A of Figure 2a.
  • FIG. 1a and FIG. 1b are schematic plan views of an ADS or HADS array substrate according to a process of an organic film technology, and a cross-sectional structural view along a line AA, the array substrate including: a gate line 110, a data line 120, a common electrode line 130, A first electrode (pixel electrode) 140 and a second electrode (strip-shaped common electrode) 150 are interposed between the first electrode 140 and the second electrode 150 with an insulating spacer 170.
  • the second electrode 150 is connected to the common electrode line 130 through a via (not shown).
  • the gate line 110 and the data line 120 cross each other to define a pixel unit.
  • an organic film insulating layer 160 is formed over the layer on which the data line 120 is located.
  • the black matrix (as in Figure 1a, the "well” shaped area formed by the dashed box is the black matrix coverage area, and the area within the well font is the effective illumination area).
  • An organic film is formed in all of the effective light-emitting regions, so there is a loss when the backlight passes through.
  • the experimental results show that the organic film having a thickness of 2 ⁇ m has a single-layer transmittance of 96%, thereby reducing the transmission to some extent. rate.
  • An array substrate includes a base substrate, a gate line formed on the base substrate, a data line, and a plurality of pixels surrounded by the gate line and the data line.
  • Each of the pixels includes a light transmitting region and an opaque region.
  • the opaque area is an area that is not obscured by, for example, a black matrix.
  • a common electrode layer is disposed on the array substrate.
  • the array substrate is further provided with an organic film insulating layer between the common electrode layer and the layer where the data line is located, and the pattern of the organic insulating layer is in the light transmitting region. There is no organic film insulating material but at least the organic film insulating material remains in the corresponding region of the data line.
  • the organic film insulating layer in the array substrate reduces the problem of large load on the data line due to the large overlapping area of the data line and the common electrode located above the substrate, ensuring display quality, and the organic film insulating layer Only the region corresponding to the data line is formed, and the organic film insulating layer is not present in the light-transmitting region of the pixel, thereby improving the transmittance of the display device.
  • the ADS or HADS array substrate is taken as an example to describe the array in detail.
  • the structure of the substrate. 2a is a schematic structural view of an array substrate according to an embodiment of the present invention; and FIG. 2b is a schematic cross-sectional view taken along line A-A of FIG. 2a.
  • an ADS or HADS array substrate includes: a substrate substrate 200; a data line 220, a common electrode layer 250, and a pixel electrode layer 240 disposed on the substrate substrate 200; And an insulating spacer layer 270 disposed between the common electrode layer 250 and the pixel electrode layer 240. That is, an insulating spacer layer 270 is disposed over the pixel electrode layer 240 and the data line 220, and the common electrode layer 250 is disposed above the insulating spacer layer 270.
  • the data line 220 and the gate line 210 cross each other to define a pixel.
  • the common electrode line 230 is disposed in parallel to the gate line 210, for example, electrically connected to the common electrode layer 250 through a via.
  • the array substrate further includes an organic film insulating layer 260 formed between the common electrode layer 250 and the data line 220, the organic film insulating layer 260 being patterned so that no organic film insulating material exists in the light transmitting region of the pixel, but The organic film insulating material is retained at least in the corresponding region of the data line 220.
  • the liquid crystal molecules can be normally driven, for example, the organic film insulating layer 260 directly covers the data line 220, that is, The data line 220 between the insulating spacer layer 270 and the data line 220 corresponds to a region.
  • the data line 220 does not have to be formed directly on the base substrate 200, and may further include other layer structures therebetween; the data lines 220 and the pixel electrode layers are not necessarily formed on the same layer, and the two may be different. On the layer.
  • the common electrode is usually located on the color film substrate opposite thereto, and as long as the organic film insulating layer is located above the corresponding data line on the array substrate, Yes, for example, directly over the data line.
  • the organic film insulating layer completely covers the area corresponding to the data line.
  • At least one embodiment of the present invention also provides a method of fabricating an array substrate, including the following steps.
  • a pattern including a gate line, a data line, and a plurality of pixels surrounded by the gate line and the data line is formed on the base substrate, and each of the pixels includes a light transmitting area and an opaque area.
  • an organic film insulating layer is formed, and the organic film edge layer is patterned into a light-transmitting region. There is no organic film insulating material but at least the organic film insulating material remains in the corresponding region of the data line.
  • a pattern including a common electrode layer is formed over the organic film insulating layer.
  • the organic film insulating layer is formed such that the organic film edge layer is patterned to have no organic film insulating material in the light transmitting region but at least the organic film insulating material remains in the corresponding region of the data line.
  • An example is as follows.
  • a thin film of an organic insulating material is formed to obtain an organic film insulating layer which is a photosensitive organic insulating material, similar to a material of a photoresist.
  • the organic insulating material film is exposed through a mask to remove the organic insulating material film of the light transmitting region, but at least the organic insulating material film remains in the corresponding region of the data line.
  • the organic film insulating layer is formed such that the organic film edge layer is patterned to have no organic film insulating material in the light transmitting region but at least the organic film insulating material remains in the corresponding region of the data line.
  • An example is as follows.
  • a buffer layer for example, SiNx, that is, silicon nitride
  • an organic insulating material film is formed on the buffer layer to obtain an organic film insulating layer
  • the organic insulating material film is exposed through a mask to remove the
  • the organic insulating material film of the light-transmitting region is described, but at least the film of the organic insulating material remains in the corresponding region of the data line; finally, the exposed buffer layer is etched, for example, in the light-transmitting region. Since the channel of the thin film transistor (TFT) has been formed at the time of forming the organic film insulating layer, the formation of the buffer layer can protect the channel of the thin film transistor from being contaminated by the organic insulating material to maintain the TFT characteristics.
  • TFT thin film transistor
  • the film of the organic insulating material is exposed through a mask to remove the film of the organic insulating material in the light-transmitting region, but the step of retaining the film of the organic insulating material at least in the corresponding region of the data line
  • a mask to remove the film of the organic insulating material in the light-transmitting region
  • the organic insulating material film is exposed through a mask to remove the organic insulating material film of the light-transmitting region, and only the organic insulating material film of the corresponding region of the data line is retained. That is, the organic film insulating layer completely covers the data line.
  • a specific example of the step of forming a pattern including a common electrode layer over the organic film insulating layer is as follows. Forming a pixel electrode layer over the organic film insulating layer; forming an insulating spacer layer over the pixel electrode layer; forming the common electrode layer over the insulating spacer layer.
  • At least one embodiment of the present invention also provides a display device, including any of the above embodiments.
  • Array substrate The display device may be a product or a component having any display function such as a liquid crystal panel, an electronic paper, a liquid crystal television, a liquid crystal display, a digital photo frame, a mobile phone, a tablet computer, or a watch.

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Abstract

一种阵列基板及制作方法、显示装置，该阵列基板包括：衬底基板(200)，形成在衬底基板(200)上的栅线(210)、数据线(220)、公共电极层(250)、多个由所述栅线(210)和数据线(220)交叉围成的像素，以及位于所述公共电极层(250)和数据线(220)所在层之间的有机膜绝缘层(260)。每个像素内包括透光区域和不透光区域，所述有机膜绝缘层(260)的图案在透光区域中不存在有机膜绝缘材料但至少在数据线(220)对应区域保留有机膜绝缘材料。该阵列基板在不影响显示品质的情况下提高了显示装置的透过率。

Description

阵列基板及制作方法、显示装置 技术领域
本发明的实施例涉及一种阵列基板及制作方法、显示装置。
背景技术
目前，TFT显示领域飞速发展，显示器的发展需要轻薄化，高分辨率，高透过率等特性。从显示模式来看，主要有VA、TN、ADS及HADS等模式。由于ADS和HADS两者具有高开口率高透过率而更受广大客户的重视。
发明内容
本发明至少一实施例提出一种阵列基板及制作方法、显示装置，能够在不影响显示品质的情况下提高显示装置的透过率。
本发明至少一实施例提供了一种阵列基板，包括：衬底基板，形成在衬底基板上的栅线、数据线、公共电极层、多个由所述栅线和数据线交叉围成的像素，以及位于所述公共电极层和数据线所在层之间的有机膜绝缘层；每个像素内包括透光区域和不透光区域，所述有机膜绝缘层的图案在透光区域中不存在有机膜绝缘材料但至少在数据线对应区域保留有机膜绝缘材料。
在本发明至少一实施例中，例如，所述阵列基板上还形成有像素电极层，所述像素电极层上方设置有绝缘间隔层，所述公共电极层设置于所述绝缘间隔层上方。
在本发明至少一实施例中，例如，所述有机膜绝缘层位于所述绝缘间隔层和数据线所在层之间。
在本发明至少一实施例中，例如，所述有机膜绝缘层完全覆盖数据线对应的区域。
本发明至少一实施例还提供了一种显示装置，包括上述任一项所述的阵列基板。
本发明至少一实施例还提供了一种阵列基板的制作方法，包括：在衬底基板上形成包括栅线、数据线及多个由所述栅线和数据线交叉围成的像素的 图形，每个像素内包括透光区域和不透光区域；形成有机膜绝缘层，使得所述有机绝膜缘层图案化为在透光区域中不存在有机膜绝缘材料但至少在数据线对应区域保留有机膜绝缘材料；在所述有机膜绝缘层上方形成包括公共电极层的图形。
在本发明至少一实施例中，例如，所述形成有机膜绝缘层之后，通过掩膜板对所述有机绝缘层进行曝光，去除所述透光区域的有机绝缘材料薄膜，但至少在数据线对应区域保留有机绝缘材料薄膜。
在本发明至少一实施例中，例如，形成缓冲层并在所述缓冲层上形成有机绝缘层；通过掩膜板对所述有机绝缘层进行曝光，去除所述透光区域的有机绝缘材料薄膜，但至少在数据线对应区域保留有机绝缘材料薄膜；在透光区内刻蚀暴露出的缓冲层。
在本发明至少一实施例中，例如，通过掩膜板对所述有机绝缘层进行曝光，去除所述透光区域的有机绝缘层，且只保留数据线对应区域的有机绝缘材料薄膜。
在本发明至少一实施例中，例如，在所述有机膜绝缘层上方形成像素电极层；所述像素电极层之上形成绝缘间隔层；在所述绝缘间隔层之上形成所述公共电极层。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1a是一种阵列基板结构示意图；
图1b是沿图1a中A-A向的截面示意图；
图2a是根据本发明实施例的一种阵列基板结构示意图；
图2b是沿图2a中A-A向的截面示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然， 所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
图1a和图1b为一种涉及有机膜技术的工艺的ADS或HADS阵列基板的平面示意图以及沿A-A线的截面结构示意图，该阵列基板包括：栅线110、数据线120、公共电极线130、第一电极(像素电极)140和第二电极(条状公共电极)150，第一电极140和第二电极150之间间隔有绝缘间隔层170。第二电极150通过过孔(未示出)连接公共电极线130。栅线110和数据线120彼此交叉界定了像素单元。
在上述ADS和HADS显示模式中，由于其数据线120走线和公共电极150重叠面积较大，因此其交叠电容就会增大，使其数据线120上的负载比较大，从而影响了画面的显示品质。为克服该问题，可采用有机膜工艺技术。如图1b所示，在数据线120所在层之上形成一层有机膜绝缘层160。
发明人发现，在图1a和1b所示的结构中，黑矩阵(如图1a中，虚线框形成的“井”字形区域为黑矩阵覆盖区域，井字形内的区域为有效发光区)所围成的有效发光区域内全部形成有有机膜，因此背光穿过时会有所损失，实验结果表明，厚度为2μm的有机膜其单层透过率为96％，因此在一定程度上降低了透过率。
本发明至少一实施例的阵列基板包括：衬底基板，形成在衬底基板之上的栅线、数据线及多个由所述栅线和数据线交叉围成的像素。每个像素内包括透光区域和不透光区域。不透光区域即未被例如黑矩阵遮挡的区域。所述阵列基板上设置有公共电极层。为了不影响显示品质且提高透过率，该阵列基板上还设置有：位于所述公共电极层和数据线所在层之间的有机膜绝缘层，所述有机绝缘层的图案在透光区域中不存在有机膜绝缘材料但至少在数据线对应区域保留有机膜绝缘材料。
该阵列基板的中的有机膜绝缘层减轻了由于数据线及位于其上方的公共电极重叠面积较大而导致的数据线上的负载比较大的问题，保证了显示品质，且该有机膜绝缘层只形成在数据线对应的区域，在像素的透光区域没有该有机膜绝缘层，从而提高了显示装置的透过率。
在下面描述的实施例中以ADS或HADS阵列基板为例，详细说明阵列 基板的结构。图2a是根据本发明实施例的一种阵列基板结构示意图；图2b是沿图2a中A-A向的截面示意图。
如图2a、2b所示，根据本发明一个实施例的ADS或HADS阵列基板包括：衬底基板200；设置在该衬底基板200上的数据线220、公共电极层250、像素电极层240；以及设置于公共电极层250和像素电极层240之间的绝缘间隔层270。也即，像素电极层240和数据线220上方设置有绝缘间隔层270，公共电极层250设置于绝缘间隔层270上方。数据线220和栅线210彼此交叉界定了像素。另外，公共电极线230平行于栅线210设置，例如通过过孔电连接至公共电极层250。
该阵列基板还包括形成在公共电极层250和数据线220之间的有机膜绝缘层260，该有机膜绝缘层260被图案化，从而在像素的透光区域中不存在有机膜绝缘材料，但至少在数据线220对应区域保留有机膜绝缘材料。本实施例中，为了尽量减轻对公共电极250和像素电极240之间的电场强度的影响，使液晶分子能够正常驱动，例如有机膜绝缘层260直接覆盖在所述数据线220之上，即位于绝缘间隔层270和数据线220之间的数据线220对应区域。
需要指出的是上述图中仅给出了本发明实施例的示意图，并非出于限制的目的。例如，数据线220并非必须直接形成在衬底基板200之上，在二者之间还可以包括其他层结构；数据线220与像素电极层也并非必须形成在同一层上，二者可以位于不同的层上。
对于其上没有公共电极层的阵列基板，如TN模式的显示装置中，公共电极通常位于与其对置的彩膜基板上，此时只要保证有机膜绝缘层位于阵列基板上对应数据线的上方即可，例如直接覆盖在数据线之上。
进一步地，为了尽量避免由于数据线及位于其上方的公共电极重叠面积较大而导致的数据线上的负载比较大的问题，有机膜绝缘层完全覆盖数据线对应的区域。
本发明至少一实施例还提供了一种阵列基板的制作方法，包括以下步骤。
首先，在衬底基板上形成包括栅线、数据线及多个由所述栅线和数据线交叉围成的像素的图形，每个像素内包括透光区域和不透光区域。
其次，形成有机膜绝缘层，将所述有机绝膜缘层图案化为在透光区域中 不存在有机膜绝缘材料但至少在数据线对应区域保留有机膜绝缘材料。
然后，在所述有机膜绝缘层上方形成包括公共电极层的图形。
本发明至少一实施例中，形成有机膜绝缘层，使得所述有机绝膜缘层图案化为在透光区域中不存在有机膜绝缘材料但至少在数据线对应区域保留有机膜绝缘材料的具体示例如下所述。
首先，形成有机绝缘材料薄膜以得到有机膜绝缘层，该有机绝缘材料是感光有机绝缘材料，类似于光刻胶的一种材料。通过掩膜板对所述有机绝缘材料薄膜进行曝光，去除所述透光区域的有机绝缘材料薄膜，但至少在数据线对应区域保留有机绝缘材料薄膜。
本发明至少一实施例中，形成有机膜绝缘层，使得所述有机绝膜缘层图案化为在透光区域中不存在有机膜绝缘材料但至少在数据线对应区域保留有机膜绝缘材料的具体示例如下所述。
首先形成缓冲层(如：SiNx，即硅的氮化物)，再在缓冲层上形成有机绝缘材料薄膜以得到有机膜绝缘层；之后通过掩膜板对所述有机绝缘材料薄膜进行曝光，去除所述透光区域的有机绝缘材料薄膜，但至少在数据线对应区域保留有机绝缘材料薄膜；最后，例如在所述透光区内刻蚀暴露出的缓冲层。由于在形成有机膜绝缘层时，薄膜晶体管(TFT)的沟道已经形成，形成缓冲层可以保护薄膜晶体管的沟道不被有机绝缘材料污染，以保持TFT特性。
本发明至少一实施例中，所述通过掩膜板对所述有机绝缘材料薄膜进行曝光，去除所述透光区域的有机绝缘材料薄膜，但至少在数据线对应区域保留有机绝缘材料薄膜的步骤具体示例如下所述。
通过掩膜板对所述有机绝缘材料薄膜进行曝光，去除所述透光区域的有机绝缘材料薄膜，且只保留数据线对应区域的有机绝缘材料薄膜。即使得有机膜绝缘层正好完全覆盖数据线。
本发明至少一实施例中，在所述有机膜绝缘层上方形成包括公共电极层的图形的步骤具体示例如下所述。在所述有机膜绝缘层上方形成像素电极层；所述像素电极层之上形成绝缘间隔层；在所述绝缘间隔层之上形成所述公共电极层。
本发明至少一实施例还提供了一种显示装置，包括上述任一实施例所述 的阵列基板。该显示装置可以为：液晶面板、电子纸、液晶电视、液晶显示器、数码相框、手机、平板电脑、手表等具有任何显示功能的产品或部件。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2014年7月28日递交的中国专利申请第201410364401.5号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (10)

  1. 一种阵列基板，包括：
    衬底基板；
    形成在衬底基板上的栅线、数据线、公共电极层、多个由所述栅线和数据线交叉围成的像素；以及
    位于所述公共电极层和数据线所在层之间的有机膜绝缘层；
    其中，每个像素包括透光区域和不透光区域，其中，所述有机膜绝缘层的图案在透光区域中不存在有机膜绝缘材料但至少在数据线对应区域保留有机膜绝缘材料。
  2. 如权利要求1所述的阵列基板，还包括像素电极层，其中，所述像素电极层上方设置有绝缘间隔层，所述公共电极层设置于所述绝缘间隔层上方。
  3. 如权利要求2所述的阵列基板，其中，所述有机膜绝缘层位于所述绝缘间隔层和数据线所在层之间。
  4. 如权利要求1～3中任一项所述的阵列基板，其中，所述有机膜绝缘层完全覆盖数据线对应的区域。
  5. 一种显示装置，包括如权利要求1～4中任一项所述的阵列基板。
  6. 一种阵列基板的制作方法，包括：
    在衬底基板上形成包括栅线、数据线及多个由所述栅线和数据线交叉围成的像素的图形，每个像素内包括透光区域和不透光区域；
    形成有机膜绝缘层，将所述有机绝膜缘层图案化为在透光区域中不存在有机膜绝缘材料但至少在数据线对应区域保留有机膜绝缘材料；
    在所述有机膜绝缘层上方形成包括公共电极层的图形。
  7. 如权利要求6所述的阵列基板制作方法，其中，形成所述有机绝缘层之后，通过掩膜板对所述有机绝缘层进行曝光，去除所述透光区域的有机绝缘材料薄膜，但至少在数据线对应区域保留有机绝缘材料薄膜。
  8. 如权利要求6所述的阵列基板制作方法，其中，形成缓冲层，并在所述缓冲层上形成所述有机绝缘层；通过掩膜板对所述有机绝缘层进行曝光，去除所述透光区域的有机绝缘材料薄膜，但至少在数据线对应区域保留有机绝缘材料薄膜；在所述透光区内刻蚀暴露出的缓冲层。
  9. 如权利要求7或8所述的阵列基板制作方法，其中，通过掩膜板对所述有机绝缘层进行曝光，去除所述透光区域的有机绝缘层，且只保留数据线对应区域的有机绝缘层。
  10. 如权利要求6-9任一项所述的阵列基板制作方法，其中，在所述有机膜绝缘层上方形成像素电极层；所述像素电极层之上形成绝缘间隔层；在所述绝缘间隔层之上形成所述公共电极层。
PCT/CN2014/088691 2014-07-28 2014-10-15 阵列基板及制作方法、显示装置 Ceased WO2016015383A1 (zh)

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