WO2016015355A1 - 阵列基板及液晶显示面板 - Google Patents

阵列基板及液晶显示面板 Download PDF

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Publication number
WO2016015355A1
WO2016015355A1 PCT/CN2014/084040 CN2014084040W WO2016015355A1 WO 2016015355 A1 WO2016015355 A1 WO 2016015355A1 CN 2014084040 W CN2014084040 W CN 2014084040W WO 2016015355 A1 WO2016015355 A1 WO 2016015355A1
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WO
WIPO (PCT)
Prior art keywords
array substrate
liquid crystal
disposed
common line
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/CN2014/084040
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English (en)
French (fr)
Inventor
李厚斌
黄宇吾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to KR1020177004618A priority Critical patent/KR102009682B1/ko
Priority to GB1703020.6A priority patent/GB2544224B/en
Priority to US14/410,429 priority patent/US20160282675A1/en
Priority to JP2017503521A priority patent/JP2017521721A/ja
Priority to EA201790277A priority patent/EA032133B1/ru
Publication of WO2016015355A1 publication Critical patent/WO2016015355A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
    • G02F1/133723—Polyimide, polyamide-imide
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133388—Constructional arrangements; Manufacturing methods with constructional differences between the display region and the peripheral region
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Definitions

  • the present invention relates to the field of liquid crystal technology, and in particular to an array substrate and a liquid crystal display panel.
  • liquid crystal display technology With the development of liquid crystal display technology, more and more users are beginning to use liquid crystal display devices for social entertainment activities.
  • the liquid crystal display panels of the conventional liquid crystal display devices each include an array substrate (TFT substrate) and a color filter substrate (CF substrate).
  • a liquid crystal layer is disposed between the array substrate and the color filter substrate.
  • a PI (Polyimide) guiding film is coated on the inner side of the array substrate and the color filter substrate to form a pretilt angle of the liquid crystal molecules in the liquid crystal layer, thereby accelerating the response speed of the liquid crystal display.
  • the material of the PI guiding film diffuses toward the peripheral edges of the array substrate. Since the edge structure of the array substrate (external wiring region) and the structure of the internal display region are different, the material of the PI guiding film is deposited in the edge region of the array substrate, thereby causing the thickness of the PI guiding film of the adjacent display region.
  • the edge portion of the liquid crystal display panel or the edge portion of the array substrate is prone to light leakage, which affects the display quality of the liquid crystal display device.
  • An object of the present invention is to provide an array substrate and a liquid crystal display panel to solve the problem that the guiding film on the edge region of the array substrate of the conventional liquid crystal display panel is prone to accumulation, thereby causing light leakage at the edge portion of the liquid crystal display panel.
  • the embodiment of the present invention provides an array substrate disposed in a corresponding liquid crystal display panel, wherein the array substrate includes:
  • a pixel electrode configured to receive the data signal
  • a thin film field effect transistor for transmitting the data signal to the pixel electrode according to the scan signal
  • a guiding film disposed on a surface of the array substrate for causing liquid crystal molecules to form a pretilt angle
  • the data line, the scan line, the pixel electrode, and the thin film field effect transistor are disposed in a display area in the middle of the array substrate;
  • the common line is disposed in a non-display area of an edge of the array substrate The guiding film is disposed on the display area and the non-display area of the array substrate;
  • the material of the common line is metal aluminum; the thickness in the common line is 80 nm to 120 nm.
  • the common line has a width of 400 ⁇ m to 600 ⁇ m.
  • the width of the grid in the common line is 4 micrometers to 10 micrometers.
  • the thickness of the guiding film is from 100 nm to 200 nm.
  • the thickness of the guiding film at the non-display area of the array substrate is 150 nm to 200 nm.
  • the thickness of the guiding film at the display region of the array substrate is from 100 nm to 150 nm.
  • the embodiment of the present invention provides an array substrate disposed in a corresponding liquid crystal display panel, wherein the array substrate includes:
  • a pixel electrode configured to receive the data signal
  • a thin film field effect transistor for transmitting the data signal to the pixel electrode according to the scan signal
  • a guiding film disposed on a surface of the array substrate for causing liquid crystal molecules to form a pretilt angle
  • the data line, the scan line, the pixel electrode, and the thin film field effect transistor are disposed in a display area in the middle of the array substrate; the common line is disposed in a non-display area of an edge of the array substrate The guiding film is disposed on the display area and the non-display area of the array substrate.
  • the common line has a width of 400 ⁇ m to 600 ⁇ m.
  • the width of the grid in the common line is 4 micrometers to 10 micrometers.
  • the material of the common line is metal aluminum.
  • the thickness in the common line is from 80 nm to 120 nm.
  • the thickness of the guiding film is from 100 nm to 200 nm.
  • the thickness of the guiding film at the non-display area of the array substrate is 150 nm to 200 nm.
  • the thickness of the guiding film at the display region of the array substrate is from 100 nm to 150 nm.
  • the embodiment of the invention further provides a liquid crystal display panel, comprising: an array substrate, a color filter substrate, and a liquid crystal layer disposed between the array substrate and the color filter substrate;
  • the array substrate comprises:
  • a pixel electrode configured to receive the data signal
  • a thin film field effect transistor for transmitting the data signal to the pixel electrode according to the scan signal
  • a guiding film disposed on a surface of the array substrate for causing liquid crystal molecules to form a pretilt angle
  • the data line, the scan line, the pixel electrode, and the thin film field effect transistor are disposed in a display area in the middle of the array substrate; the common line is disposed in a non-display area of an edge of the array substrate The guiding film is disposed on the display area and the non-display area of the array substrate.
  • the common line has a width of 400 ⁇ m to 600 ⁇ m.
  • the width of the mesh in the common line is 4 micrometers to 10 micrometers.
  • the material of the common line is metal aluminum.
  • the thickness in the common line is from 80 nm to 120 nm.
  • the thickness of the guiding film is from 100 nm to 200 nm.
  • the array substrate and the liquid crystal display panel of the present invention are arranged in a common line of a grid pattern, so that the guide film is less likely to accumulate in the edge region of the array substrate;
  • the guide film on the edge region of the array substrate of the liquid crystal display panel is prone to accumulation phenomenon, thereby causing a technical problem that the edge portion of the liquid crystal display panel is prone to light leakage.
  • 1 is a schematic structural view of a conventional array substrate
  • FIG. 2 is a cross-sectional view of the liquid crystal display panel of the prior art array substrate taken along line A-A' of FIG. 1;
  • FIG 3 is a schematic structural view of a preferred embodiment of the array substrate of the present invention.
  • FIG. 1 is a schematic structural view of a conventional array substrate
  • FIG. 2 is a cross-sectional view of the liquid crystal display panel of the prior art array substrate taken along line A-A' of FIG.
  • the dimensions of some of the components in the figures have been adjusted accordingly, and some of the components that have not been modified in the prior art are not shown.
  • the liquid crystal display panel 10 includes a color filter substrate 11, an array substrate 12, and a liquid crystal layer 13 disposed between the array substrate 12 and the color filter substrate 11.
  • the array substrate 12 includes an array substrate substrate 121, data lines 122, scan lines 123, pixel electrodes 124, thin film field effect transistors 125, common lines 126, and array substrate side guide films 127.
  • the color filter substrate 11 includes a color filter substrate substrate 111, color resists 112, and a color film side guide film 113.
  • the liquid crystal layer 13 is sealed in the accommodation space between the array substrate 12 and the color filter substrate 11 by the sealant 14.
  • the data line 122 is used for transmitting the data signal; the scan line 123 is for transmitting the scan signal; the pixel electrode 124 is for receiving the data signal; the thin film field effect transistor 125 is for transmitting the data signal to the pixel electrode 124 according to the scan signal; 126 is a solid metal wire or a solid film wire for transmitting a common signal; the array substrate side guiding film 127 is disposed on a surface of the array substrate for causing liquid crystal molecules in the liquid crystal layer 13 to form a pretilt angle.
  • the data line 122, the scan line 123, the pixel electrode 124, and the thin film field effect transistor 125 are disposed in the display area in the middle of the array substrate 12, the common line 126 is disposed in the non-display area of the edge of the array substrate 12, and the array substrate side guide film 127 is disposed.
  • the display area and the non-display area of the array substrate 12 (and the array substrate side guide film 127 are disposed on the entire array substrate 12).
  • the data line 122, the scan line 123, the thin film field effect transistor 125, the pixel electrode 124, and the like are first formed on the array substrate 121 of the array substrate 12.
  • the common line 126 is then coated on the surface of the entire array substrate 12 with the array substrate side guiding film 127 (ie, the PI guiding film).
  • the edge line of the array substrate 12 is provided with the common line 126 (solid metal line), the array substrate The diffusion of the side guiding film 127 here is blocked by the common line 126, causing the array substrate side guiding film 127 of the edge region of the array substrate 12 to be thick, thereby causing the thickness of the array substrate side guiding film 127 of the adjacent display region to also be The thickness is thick (approximately 200 nm to 300 nm), so that the edge portion of the liquid crystal display panel 10 is prone to light leakage, which affects the display quality of the liquid crystal display device.
  • FIG. 3 is a schematic structural view of a preferred embodiment of the array substrate of the present invention.
  • the array substrate 32 of the preferred embodiment includes an array substrate substrate (not shown), a data line 321, a scan line 322, a pixel electrode 323, a thin film field effect transistor 324, a common line 325, and a guiding film (not shown). Out).
  • a metal pattern of a grid pattern for transmitting a common signal; a guide film is disposed on a surface of the array substrate 32 for causing liquid crystal molecules to form a pretilt angle.
  • the data line 321, the scan line 322, the pixel electrode 323, and the thin film field effect transistor 324 are disposed in a display area in the middle of the array substrate 32, the common line 325 is disposed on the non-display area of the edge of the array substrate 32, and the guide film is disposed on the array substrate. 32 display area and non-display area.
  • a data line 321, a scan line 322, a thin film field effect transistor 324, a pixel electrode 323, and a common line 325 are formed on the array substrate of the array substrate 32.
  • a guide film i.e., a PI guide film
  • the guide film is diffused to the region of the array substrate 32 having the common line 325, since the common line 325 is a metal pattern of a grid pattern, the guide film is more easily diffused on the common line 325, thereby causing the edge region of the array substrate 32.
  • the thickness of the guiding film is not excessively thick, and the thickness of the guiding film of the adjacent display area is also smaller than the thickness of the guiding film of the display area in the middle of the array substrate 32, thereby avoiding the liquid crystal display panel.
  • the occurrence of light leakage at the edge portion improves the display quality of the liquid crystal display device.
  • the material of the common line 325 in the array substrate 32 of the preferred embodiment is metal aluminum
  • the width of the common line 325 is 400 micrometers to 600 micrometers
  • the width of the grids in the common line 325 is 4 micrometers to 10 micrometers.
  • the particles of the guiding film material are all smaller than the size of the mesh)
  • the thickness of the common line 325 is from 80 nm to 120 nm, such that the non-display area of the edge of the array substrate 32 (the set area of the common line 325) is guided by the film.
  • the thickness of the guiding film at the display region in the middle of the array substrate 32 is from 100 nm to 150 nm (the thickness of the guiding film of the non-display region of the existing array substrate is from 200 nm to 300 nm). Therefore, the thickness difference between the guiding film of the edge display region of the array substrate 32 and the guiding film of the intermediate display region of the array substrate 32 is small, and the light leakage phenomenon at the edge portion of the liquid crystal display panel is well avoided, and the liquid crystal is improved. The display quality of the display device.
  • the present invention also provides a liquid crystal display panel comprising an array substrate, a color filter substrate, and a liquid crystal layer disposed between the array substrate and the color filter substrate.
  • the array substrate includes a data line, a scan line, a pixel electrode, a thin film field effect transistor, a common line, and a guiding film.
  • the data line is used for transmitting the data signal;
  • the scan line is for transmitting the scan signal;
  • the pixel electrode is for receiving the data signal;
  • the thin film field effect transistor is for transmitting the data signal to the pixel electrode according to the scan signal;
  • the common line is a grid pattern a metal wire for transmitting a common signal; a guiding film disposed on a surface of the array substrate for causing liquid crystal molecules to form a pretilt angle.
  • the data line, the scan line, the pixel electrode, and the thin film field effect transistor are disposed in a display area in the middle of the array substrate, the common line is disposed in a non-display area at an edge of the array substrate, and the guiding film is disposed on the display area and the non-display area of the array substrate.
  • the specific working principle of the liquid crystal display panel of the present invention is the same as or similar to the related description in the preferred embodiment of the array substrate. For details, refer to the related description in the preferred embodiment of the array substrate.
  • the array substrate and the liquid crystal display panel of the present invention are arranged in a common line of the grid pattern, so that the guide film is less likely to accumulate in the edge region of the array substrate; the orientation on the edge region of the array substrate of the existing liquid crystal display panel is solved.
  • the film is prone to accumulation, which causes a problem of light leakage at the edge portion of the liquid crystal display panel.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种阵列基板(12)及液晶显示面板(10)，其包括数据线(122)、扫描线(123)、像素电极(124)、薄膜场效应晶体管(125)、公共线(126)以及导向膜(127)，其中公共线(126)为网格状图案的金属线。通过设置网格状图案的公共线(126)，使得导向膜(127)不易在阵列基板的边缘出现堆积现象。

Description

阵列基板及液晶显示面板 技术领域
本发明涉及液晶技术领域，特别是涉及一种阵列基板及液晶显示面板。
 背景技术
随着液晶显示技术的发展，越来越多的用户开始使用液晶显示装置进行社交娱乐活动。
现有的液晶显示装置的液晶显示面板均包括阵列基板（TFT基板）和彩膜基板（CF基板）。阵列基板和彩膜基板之间设置有液晶层。阵列基板和彩膜基板的内侧涂布有PI（Polyimide，聚酰亚胺）导向膜，以使得液晶层中的液晶分子形成预倾角，加快液晶显示的响应速度。
在阵列基板上涂布PI导向膜时，PI导向膜的材料会向阵列基板的四周边缘扩散。由于阵列基板的边缘结构（外部走线区域）与内部显示区域的结构有所差异，造成PI导向膜的材料在阵列基板的边缘区域出现堆积现象，因此导致邻近的显示区域的PI导向膜的厚度也偏厚；当该液晶显示装置进行显示时，液晶显示面板的边缘部分（或阵列基板的边缘部分）容易出现漏光现象，影响了液晶显示装置的显示品质。
故，有必要提供一种阵列基板及液晶显示面板，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种阵列基板及液晶显示面板，以解决现有的液晶显示面板的阵列基板的边缘区域上的导向膜易出现堆积现象，从而导致液晶显示面板的边缘部分容易出现漏光现象的技术问题。
 技术解决方案
本发明实施例提供一种阵列基板，设置在相应的液晶显示面板中，其中所述阵列基板包括：
数据线，用于传输数据信号；
扫描线，用于传输扫描信号；
像素电极，用于接收所述数据信号；
薄膜场效应晶体管，用于根据所述扫描信号，将所述数据信号发送至所述像素电极；
公共线，为网格状图案的金属线，用于传输公共信号，以及
导向膜，设置在所述阵列基板的表面，用于使得液晶分子形成预倾角；
其中所述数据线、所述扫描线、所述像素电极以及所述薄膜场效应晶体管设置在所述阵列基板的中间的显示区域；所述公共线设置在所述阵列基板的边缘的非显示区域；所述导向膜设置在所述阵列基板的所述显示区域和所述非显示区域；
其中所述公共线的材料为金属铝；所述公共线中的厚度为80纳米至120纳米。
在本发明所述的阵列基板中，所述公共线的宽度为400微米至600微米。
在本发明所述的阵列基板中，所述公共线中的网格的宽度为4微米至10微米。
在本发明所述的阵列基板中，所述导向膜的厚度为100纳米至200纳米。
在本发明所述的阵列基板中，所述阵列基板的所述非显示区域处的所述导向膜的厚度为150纳米至200纳米。
在本发明所述的阵列基板中，所述阵列基板的所述显示区域处的所述导向膜的厚度为100纳米至150纳米。
本发明实施例提供一种阵列基板，设置在相应的液晶显示面板中，其中所述阵列基板包括：
数据线，用于传输数据信号；
扫描线，用于传输扫描信号；
像素电极，用于接收所述数据信号；
薄膜场效应晶体管，用于根据所述扫描信号，将所述数据信号发送至所述像素电极；
公共线，为网格状图案的金属线，用于传输公共信号，以及
导向膜，设置在所述阵列基板的表面，用于使得液晶分子形成预倾角；
其中所述数据线、所述扫描线、所述像素电极以及所述薄膜场效应晶体管设置在所述阵列基板的中间的显示区域；所述公共线设置在所述阵列基板的边缘的非显示区域；所述导向膜设置在所述阵列基板的所述显示区域和所述非显示区域。
在本发明所述的阵列基板中，所述公共线的宽度为400微米至600微米。
在本发明所述的阵列基板中，所述公共线中的网格的宽度为4微米至10微米。
在本发明所述的阵列基板中，所述公共线的材料为金属铝。
在本发明所述的阵列基板中，所述公共线中的厚度为80纳米至120纳米。
在本发明所述的阵列基板中，所述导向膜的厚度为100纳米至200纳米。
在本发明所述的阵列基板中，所述阵列基板的所述非显示区域处的所述导向膜的厚度为150纳米至200纳米。
在本发明所述的阵列基板中，所述阵列基板的所述显示区域处的所述导向膜的厚度为100纳米至150纳米。
本发明实施例还提供一种液晶显示面板，其包括：阵列基板、彩膜基板以及设置在所述阵列基板以及彩膜基板之间的液晶层；
其中所述阵列基板包括：
数据线，用于传输数据信号；
扫描线，用于传输扫描信号；
像素电极，用于接收所述数据信号；
薄膜场效应晶体管，用于根据所述扫描信号，将所述数据信号发送至所述像素电极；
公共线，为网格状图案的金属线，用于传输公共信号，以及
导向膜，设置在所述阵列基板的表面，用于使得液晶分子形成预倾角；
其中所述数据线、所述扫描线、所述像素电极以及所述薄膜场效应晶体管设置在所述阵列基板的中间的显示区域；所述公共线设置在所述阵列基板的边缘的非显示区域；所述导向膜设置在所述阵列基板的所述显示区域和所述非显示区域。
在本发明所述的液晶显示面板中，所述公共线的宽度为400微米至600微米。
在本发明所述的液晶显示面板中，所述公共线中的网格的宽度为4微米至10微米。
在本发明所述的液晶显示面板中，所述公共线的材料为金属铝。
在本发明所述的液晶显示面板中，所述公共线中的厚度为80纳米至120纳米。
在本发明所述的液晶显示面板中，所述导向膜的厚度为100纳米至200纳米。
 有益效果
相较于现有的阵列基板及液晶显示面板，本发明的阵列基板及液晶显示面板通过设置网格状图案的公共线，使得导向膜不易在阵列基板的边缘区域出现堆积现象；解决了现有的液晶显示面板的阵列基板的边缘区域上的导向膜易出现堆积现象，从而导致液晶显示面板的边缘部分容易出现漏光现象的技术问题。
 附图说明
图1为现有的阵列基板的结构示意图；
图2为现有技术的阵列基板所在的液晶显示面板按图1的A-A’截面线的截面图；
图3为本发明的阵列基板的优选实施例的结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的单元是以相同标号表示。
请参照图1和图2，图1为现有的阵列基板的结构示意图，图2为现有技术的阵列基板所在的液晶显示面板按图1的A-A’截面线的截面图。为了说明的需要，图中部分部件的尺寸进行了相应的调整，并对部分现有技术中未做改进的部件未进行显示。
该液晶显示面板10包括彩膜基板11、阵列基板12以及设置在阵列基板12和彩膜基板11之间的液晶层13。该阵列基板12包括阵列基板衬底121、数据线122、扫描线123、像素电极124、薄膜场效应晶体管125、公共线126以及阵列基板侧导向膜127。该彩膜基板11包括彩膜基板衬底111、各色色阻112以及彩膜侧导向膜113。液晶层13通过框胶14密闭在阵列基板12和彩膜基板11之间的容纳空间内。其中数据线122用于传输数据信号；扫描线123用于传输扫描信号；像素电极124用于接收数据信号；薄膜场效应晶体管125用于根据扫描信号，将数据信号发送至像素电极124；公共线126为实心金属线或实心薄膜导线，用于传输公共信号；阵列基板侧导向膜127设置在阵列基板的表面，用于使得液晶层13中的液晶分子形成预倾角。
数据线122、扫描线123、像素电极124以及薄膜场效应晶体管125设置在阵列基板12的中间的显示区域，公共线126设置在阵列基板12的边缘的非显示区域，阵列基板侧导向膜127设置在阵列基板12的显示区域和非显示区域（及阵列基板侧导向膜127设置在整个阵列基板12上）。
现有技术的阵列基板12制作时，如图1和图2所示，首先在阵列基板12的阵列基板衬底121上制作数据线122、扫描线123、薄膜场效应晶体管125、像素电极124以及公共线126；然后在整个阵列基板12的表面上涂布阵列基板侧导向膜127（即PI导向膜），由于位于阵列基板12的边缘区域设置有公共线126（实心金属线），因此阵列基板侧导向膜127在此处的扩散会被公共线126阻挡，造成阵列基板12的边缘区域的阵列基板侧导向膜127偏厚，进而导致相邻的显示区域的阵列基板侧导向膜127的厚度也偏厚（大致为200纳米至300纳米），从而液晶显示面板10的边缘部分容易出现漏光现象，影响液晶显示装置的显示品质。
请参照图3，图3为本发明的阵列基板的优选实施例的结构示意图。本优选实施例的阵列基板32包括阵列基板衬底（图中未示出）、数据线321、扫描线322、像素电极323、薄膜场效应晶体管324、公共线325以及导向膜（图中未示出）。数据线321用于传输数据信号；扫描线322用于传输扫描信号；像素电极323用于接收数据信号；薄膜场效应晶体管324用于根据扫描信号，将数据信号发送至像素电极323；公共线325为网格状图案的金属线，用于传输公共信号；导向膜设置在阵列基板32的表面，用于使得液晶分子形成预倾角。
其中数据线321、扫描线322、像素电极323、薄膜场效应晶体管324设置在阵列基板32的中间的显示区域，公共线325设置在阵列基板32的边缘的非显示区域，导向膜设置在阵列基板32的显示区域和非显示区域。
本优选实施例的阵列基板32制作时，如图3所示，首先在阵列基板32的阵列基板衬底上制作数据线321、扫描线322、薄膜场效应晶体管324、像素电极323以及公共线325；然后在整个阵列基板32的表面上涂布导向膜（即PI导向膜）。当导向膜扩散至阵列基板32的具有公共线325的区域时，由于公共线325为网格状图案的金属线，导向膜较容易在公共线325上进行扩散，从而使得阵列基板32的边缘区域（非显示区域）的导向膜的厚度不会过厚，相邻的显示区域的导向膜的厚度也会和阵列基板32的中间的显示区域的导向膜的厚度差异较小，避免了液晶显示面板的边缘部分的漏光现象的产生，提升了液晶显示装置的显示品质。
优选的，本优选实施例的阵列基板32中的公共线325的材料为金属铝，公共线325的宽度为400微米至600微米，公共线325中网格的宽度为4微米至10微米（常用的导向膜材料的颗粒均小于该网格的尺寸），公共线325的厚度为80纳米至120纳米，这样阵列基板32的边缘的非显示区域（公共线325的设置区域）处的导向膜的厚度为150纳米至200纳米，阵列基板32的中间的显示区域处的导向膜的厚度为100纳米至150纳米（现有的阵列基板的非显示区域的导向膜的厚度为200纳米至300纳米），从而使得阵列基板32的边缘显示区域的导向膜和阵列基板32的中间显示区域的导向膜的厚度差异较小，很好的避免了液晶显示面板的边缘部分的漏光现象的产生，提升了液晶显示装置的显示品质。
本发明还提供一种液晶显示面板，该液晶显示面板包括阵列基板、彩膜基板以及设置在阵列基板和彩膜基板之间的液晶层。该阵列基板包括数据线、扫描线、像素电极、薄膜场效应晶体管、公共线以及导向膜。数据线用于传输数据信号；扫描线用于传输扫描信号；像素电极用于接收数据信号；薄膜场效应晶体管用于根据扫描信号，将数据信号发送至像素电极；公共线为网格状图案的金属线，用于传输公共信号；导向膜设置在阵列基板的表面，用于使得液晶分子形成预倾角。
其中数据线、扫描线、像素电极、薄膜场效应晶体管设置在阵列基板的中间的显示区域，公共线设置在阵列基板的边缘的非显示区域，导向膜设置在阵列基板的显示区域和非显示区域。
本发明的液晶显示面板的具体工作原理与上述的阵列基板的优选实施例中的相关描述相同或相似，具体请参见上述阵列基板的优选实施例中的相关描述。
本发明的阵列基板及液晶显示面板通过设置网格状图案的公共线，使得导向膜不易在阵列基板的边缘区域出现堆积现象；解决了现有的液晶显示面板的阵列基板的边缘区域上的导向膜易出现堆积现象，从而导致液晶显示面板的边缘部分容易出现漏光现象的技术问题。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种阵列基板，设置在相应的液晶显示面板中，其中所述阵列基板包括：
    数据线，用于传输数据信号；
    扫描线，用于传输扫描信号；
    像素电极，用于接收所述数据信号；
    薄膜场效应晶体管，用于根据所述扫描信号，将所述数据信号发送至所述像素电极；
    公共线，为网格状图案的金属线，用于传输公共信号，以及
    导向膜，设置在所述阵列基板的表面，用于使得液晶分子形成预倾角；
    其中所述数据线、所述扫描线、所述像素电极以及所述薄膜场效应晶体管设置在所述阵列基板的中间的显示区域；所述公共线设置在所述阵列基板的边缘的非显示区域；所述导向膜设置在所述阵列基板的所述显示区域和所述非显示区域；
    其中所述公共线的材料为金属铝；所述公共线中的厚度为80纳米至120纳米。
  2. 根据权利要求1所述的阵列基板，其中所述公共线的宽度为400微米至600微米。
  3. 根据权利要求1所述的阵列基板，其中所述公共线中的网格的宽度为4微米至10微米。
  4. 根据权利要求1所述的阵列基板，其中所述导向膜的厚度为100纳米至200纳米。
  5. 根据权利要求4所述的阵列基板，其中所述阵列基板的所述非显示区域处的所述导向膜的厚度为150纳米至200纳米。
  6. 根据权利要求4所述的阵列基板，其中所述阵列基板的所述显示区域处的所述导向膜的厚度为100纳米至150纳米。
  7. 一种阵列基板，设置在相应的液晶显示面板中，其中所述阵列基板包括：
    数据线，用于传输数据信号；
    扫描线，用于传输扫描信号；
    像素电极，用于接收所述数据信号；
    薄膜场效应晶体管，用于根据所述扫描信号，将所述数据信号发送至所述像素电极；
    公共线，为网格状图案的金属线，用于传输公共信号，以及
    导向膜，设置在所述阵列基板的表面，用于使得液晶分子形成预倾角；
    其中所述数据线、所述扫描线、所述像素电极以及所述薄膜场效应晶体管设置在所述阵列基板的中间的显示区域；所述公共线设置在所述阵列基板的边缘的非显示区域；所述导向膜设置在所述阵列基板的所述显示区域和所述非显示区域。
  8. 根据权利要求7所述的阵列基板，其中所述公共线的宽度为400微米至600微米。
  9. 根据权利要求7所述的阵列基板，其中所述公共线中的网格的宽度为4微米至10微米。
  10. 根据权利要求7所述的阵列基板，其中所述公共线的材料为金属铝。
  11. 根据权利要求7所述的阵列基板，其中所述公共线中的厚度为80纳米至120纳米。
  12. 根据权利要求7所述的阵列基板，其中所述导向膜的厚度为100纳米至200纳米。
  13. 根据权利要求12所述的阵列基板，其中所述阵列基板的所述非显示区域处的所述导向膜的厚度为150纳米至200纳米。
  14. 根据权利要求12所述的阵列基板，其中所述阵列基板的所述显示区域处的所述导向膜的厚度为100纳米至150纳米。
  15. 一种液晶显示面板，其包括：阵列基板、彩膜基板以及设置在所述阵列基板以及彩膜基板之间的液晶层；
    其中所述阵列基板包括：
    数据线，用于传输数据信号；
    扫描线，用于传输扫描信号；
    像素电极，用于接收所述数据信号；
    薄膜场效应晶体管，用于根据所述扫描信号，将所述数据信号发送至所述像素电极；
    公共线，为网格状图案的金属线，用于传输公共信号，以及
    导向膜，设置在所述阵列基板的表面，用于使得液晶分子形成预倾角；
    其中所述数据线、所述扫描线、所述像素电极以及所述薄膜场效应晶体管设置在所述阵列基板的中间的显示区域；所述公共线设置在所述阵列基板的边缘的非显示区域；所述导向膜设置在所述阵列基板的所述显示区域和所述非显示区域。
  16. 根据权利要求15所述的液晶显示面板，其中所述公共线的宽度为400微米至600微米。
  17. 根据权利要求15所述的液晶显示面板，其中所述公共线中的网格的宽度为4微米至10微米。
  18. 根据权利要求15所述的液晶显示面板，其中所述公共线的材料为金属铝。
  19. 根据权利要求15所述的液晶显示面板，其中所述公共线中的厚度为80纳米至120纳米。
  20. 根据权利要求15所述的液晶显示面板，其中所述导向膜的厚度为100纳米至200纳米。
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CN105206183B (zh) * 2015-11-03 2018-10-26 珠海格力电器股份有限公司 显示面板及包括该显示面板的电器
KR102399946B1 (ko) 2020-04-22 2022-06-08 주식회사 코스모인터내셔널 노니를 이용한 두유 제조방법 및 이로 제조된 노니두유

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US20160282675A1 (en) 2016-09-29
CN104122727A (zh) 2014-10-29
KR20170032442A (ko) 2017-03-22
CN104122727B (zh) 2017-02-22
GB201703020D0 (en) 2017-04-12
JP2017521721A (ja) 2017-08-03
KR102009682B1 (ko) 2019-08-12
EA032133B1 (ru) 2019-04-30
GB2544224B (en) 2021-05-12
EA201790277A1 (ru) 2017-06-30
GB2544224A (en) 2017-05-10

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