WO2015197126A1 - Verfahren zum bonden von substraten mit verteilen eines verbindungsmaterials durch annähern der substrate - Google Patents
Verfahren zum bonden von substraten mit verteilen eines verbindungsmaterials durch annähern der substrate Download PDFInfo
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- WO2015197126A1 WO2015197126A1 PCT/EP2014/063603 EP2014063603W WO2015197126A1 WO 2015197126 A1 WO2015197126 A1 WO 2015197126A1 EP 2014063603 W EP2014063603 W EP 2014063603W WO 2015197126 A1 WO2015197126 A1 WO 2015197126A1
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- substrates
- substrate
- liquid
- bonding
- connecting material
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Definitions
- the present invention relates to a method for bonding a first substrate to a second substrate according to claim 1.
- Adhesives are increasingly being used in the semiconductor industry to bond substrates together. Here one differentiates between the temporary adhesives and the permanent adhesives.
- a temporary adhesive is usually a thermoplastic that softens above a characteristic temperature, the so-called glass transition temperature. Substrates which have been bonded by means of a thermoplastic, can be heated by heating the thermoplastic over the
- thermoplastics can be thermally cycled, so theoretically they can be heated and cooled several times without their physical and / or lose chemical properties.
- the reason lies in the fact that thermoplastics, in contrast to duromers, do not crosslink. As a result, the polymer chains can shift to each other at a correspondingly high temperature and the temporary adhesive remains malleable.
- Permanent adhesives are polymers whose polymer chains permanently crosslink with each other under chemical, thermal or electromagnetic influence.
- the networking process is irreversible.
- Such polymers are regularly used to bond substrates, especially substrates of different materials.
- connection of two substrates can be carried out by a variety of methods.
- substrates with metallic surfaces are bonded together via a metal diffusion bond.
- the connection between silicon and / or silicon oxide surfaces is effected by a so-called direct or fusion bonding.
- Glass substrates can in particular also be connected to one another by anodic bonding, as long as a required ion transport is possible.
- the said bonding processes have the significant disadvantage that they are limited to specific surface properties of the substrates. Thus, mostly only metal to metal surfaces can be connected by means of a metal diffusion bond. Furthermore, the Designarch. Fusion bond technology only between silicon and / or
- Silicon oxide surfaces or at least surfaces similar
- the thickness t of the permanent adhesive layer should be large enough to securely and permanently connect the two substrates together, and preferably surface irregularities should be compensated.
- the thickness t should be as small as possible in order not to impair the properties (for example transparency, hardness, strength, rigidity, thermal conductivity) of the products produced.
- spin coating a quantity of permanent adhesive is applied centrically to a substrate (English: dispensed). The substrate is fixed on a sample holder. After application of the permanent adhesive, the sample holder is set in rapid rotation. Due to the centrifugal force of the substrate
- the thickness t of the permanent adhesive can by the deposition amount
- Rotation speed and the rotational acceleration can be adjusted.
- Another coating technique is spray coating or
- Sprühbelacken This is a technique in which a nozzle atomizes a liquid to be applied while performing a relative movement to a substrate.
- the relative movement between nozzle and substrates may be a simple rotation, a translation or more complicated movements.
- the spin finish produces a relatively homogeneous and bubble-free layer on a substrate.
- the second substrate must be contacted with this already existing permanent adhesive layer. If the permanent adhesive layer has a large inhomogeneity (roughness), gas bubbles often get trapped.
- all types of liquids which are applied by spin coating at the edge of the substrates edge beading (English: edge bead).
- the permanent adhesive therefore has a greater thickness in the region of the edge curvature than in the center. This often leads to gas inclusions.
- Most spin-coated liquids have such high viscosity that they must be diluted with a solvent. This solvent must be removed after spin coating by a heat treatment process.
- Roughness is a direct result of the individual agglomerating droplets on the surface of the substrate.
- Object of the present invention is therefore to provide a method by which the Bondmate is improved and is universally applicable.
- the basic idea of the present invention is to use a compound material as a liquid, in particular a polymer, more preferably a polymer
- Liquid at least partially, preferably predominantly, automatically, in particular exclusively by linear movement of one or both
- a central aspect of the invention is, in particular, the
- a system according to the invention left alone strives for the state with a maximum homogeneous layer thickness, a minimum wedge error and / or an optimal liquid distribution, in particular by gravitational effect on the upper substrate and / or by capillary action between the two substrates.
- Connecting material is sufficient to form the complete bonding layer with a predetermined thickness t, in particular without that
- the ratio of the area B to A is less than 1/2, more preferably less than 1/3, even more preferably less than 1/4, even more preferably less than 1/5.
- the liquid is distributed automatically in particular by the weight force of one of the two substrates (in particular the upper one) and / or by
- Connecting material and forming a connecting layer of the Connecting material between two substrates The liquid is distributed so that an average thickness t of the hardened bonding layer is defined and the homogenous, bubble-free distribution the total thickness of the stack of first substrate, second substrate and the
- Bonding layer is constant over the area. In particular, the formation of an edge beads is prevented.
- Liquids in particular permanent adhesives, the liquid can be directly cured by irradiation, in particular by means of UV light.
- At least two substrates are used for the distribution of the bonding material, wherein the bonding material is to remain between the two substrates for a certain time.
- Temporary and permanent bonding methods are preferred according to the invention.
- the connecting material is in particular a
- a defect formation in particular blistering, is prevented, even in connection materials with high to very high viscosity. Furthermore, a liquid distribution having a very homogeneous layer thickness t is achieved by the embodiment according to the invention.
- the substrates may have any shape, but are preferably circular.
- the substrates do not have any protrusions or edges which project beyond the contact surfaces.
- the contact surface is formed in particular as completely flat.
- the diameter of the Substrates is particularly industrially standardized. For wafers (preferred as substrates) diameters of 1 inch, 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, 12 inches and 1 8 inches are particularly preferred.
- the embodiment according to the invention can basically handle any substrate, regardless of its diameter.
- the embodiment according to the invention is particularly suitable for the coating and the bonding of
- a defined amount of liquid of the bonding material is deposited or applied to the first and / or the second substrate.
- the liquid is preferably deposited / deposited centrally and forms a puddle
- the application is in particular such that a smooth and clean liquid surface is formed, wherein
- Irregularity in the liquid surface can become unwanted
- the liquid is applied not as drops, but as a geometric pattern on the substrate surface.
- Expansion according to the invention has particular advantages for the uniform distribution of the liquid on non-circular, in particular rectangular, for example, square, substrates. Rectangular substrates have no radial symmetry. The way to the corner of such a rectangular
- Substrate is therefore longer from the geometric center of the substrate than the path to some of the edges.
- the paths are therefore dependent on the direction in which the liquid is distributed. To the liquid therefore evenly, especially at the same time on the Distribute substrate surface, according to the invention in the direction of longer paths, in particular more liquid can be deposited.
- an initial situation can be created which, in the distribution of the liquid according to the invention, causes the liquid to be any point of the rectangular substrate approximately, preferably exactly, reached at the same time. Similar considerations apply to arbitrarily shaped substrates, whereby the pattern of the liquid is individually calculated for each substrate form or determined experimentally. In most
- the pattern will be composed of lines and / or point combinations.
- the line thicknesses of the lines of the pattern are varied during deposition.
- Contact shaft of the process according to the invention begins to run from the correct contact point.
- the amount of deposited / applied liquid with respect to the desired thickness t at the end of the process, ie in particular after the curing of the liquid determined, in particular calculated. Assuming a homogeneous distribution of the liquid between the substrates, a 1 00% incompressible liquid with a constant density and a corresponding predetermined substrate area, the
- the amount of liquid to be separated is calculated in particular as follows.
- the volume V of the connecting layer with the thickness t over the base area A. (Connecting surface of the first and / or second substrate) after completion of the process according to the invention is:
- V t * A
- the area A is equal to the square of the
- Circle radius (or half the diameter) times the number ⁇ , ie
- the volume is independent of the pressure.
- the amount of liquid of the bonding material is deposited / deposited by a volume control, wherein at
- set layer thickness t the amount of volume to be deposited are delivered, in particular adjusted by a hardening due
- the shrinkage at. in particular it is a
- Polymerization shrinkage is given by the shrinkage parameter s.
- a polymerization shrinkage is understood to mean the decrease in the volume or the compacting of a polymer as a result of the progressing crosslinking of the polymer chains with one another. This irreversible process takes place mainly in permanent bonding adhesives.
- Another reason for the decrease in volume would be the outgassing of liquid components.
- outgassing of a liquid would be difficult or impossible at all because the distributed liquid is between two generally gas-tight substrates. The outgassing would be possible only over the relatively narrow area between the peripheral contours of the two substrates. In the further course is therefore not closer to this
- the shrinkage parameter s is defined as the difference of 1 and the ratio of the volume V after the
- the shrinkage is less than 0.2, preferably less than 0.1, more preferably less than 0.01, most preferably less than 0.001, most preferably 0.
- the amount of liquid is in particular by a
- Mass control deposited / applied wherein the calculated volume is multiplied by the (in particular constant) density of the bonding material.
- the density of the liquid is a function of the temperature.
- the smallest possible thickness t of the connecting layer is sought to the
- Liquid amount for different layer thicknesses for a given diameter of a substrate shown in tabular form is chosen to be 1 g / cm, which is a realistic value for the density of polymers according to the invention.
- the real density of a thermoplastic, especially a thermoplastic dissolved in a solvent, may vary.
- Liquid quantities with volume V (or correspondingly converted mass m) for a 200 mm substrate and different thicknesses t Liquid quantities with volume V (or correspondingly converted mass m) for a 200 mm substrate and different thicknesses t.
- the inventive thickness t of the connecting layer is in particular between ⁇ ⁇ and 0.001 ⁇ , preferably between 75 ⁇ and 0.01 ⁇ , more preferably between 50 ⁇ and 0. 1 ⁇ , most preferably between 25 ⁇ and 1 ⁇ , most preferably between 10 ⁇ and ⁇ ⁇ .
- Substrates are performed.
- the two substrates are rapidly approached to a first position to speed up the process flow.
- the relative approach speed of the two substrates to each other is, in particular, greater than 0.01 mm / s, preferably greater than 0.1 mm / s, more preferably greater than 1 mm / s, most preferably greater than 10 mm / s.
- the embodiment according to the invention has the advantage that the correction of the wedge error can usually be completely dispensed with.
- the wedge error is completely compensated by the self-distributing liquid between the two substrates, or at least largely, automatically.
- the first position preferably ends with the ontakttechnik of the liquids (when applied to both substrates) or the liquid with one of the two substrates.
- the relative approaching speed is particularly reduced upon reaching the first position and is in particular less than 1 mm / s, preferably less than 0. 1 mm / s, more preferably less than 0.01 mm / s, most preferably less than 0.001 mm / s.
- the process according to the invention is therefore carried out in a previously described two-stage process.
- one of the substrates in particular the second substrate, is released from its fixation (receiving device).
- fixation In the case of horizontal storage of the two substrates, the gravitational force and capillary force acting through the liquid between the two substrates draws the upper substrate toward the lower substrate. Due to the resulting pressure distribution within the liquid, this is distributed automatically along the interface. The spreading liquid wave pushes the air in front of him and removes all kinds of gases from the
- Substrate interface The distribution of the liquid takes place in particular uniformly, more preferably radially symmetrically, preferably
- the liquid reaches the edge of the two substrates and due to the given quantity and the lack of capillary action, the distribution is terminated automatically.
- the liquid (connecting material) has
- Viscosity is a physical property that is highly temperature dependent.
- the viscosity of liquids, especially polymers generally decreases with increasing temperature.
- the viscosity of the bonding material according to the invention is at room temperature in particular between 1 0 6 Pa * s and 1 Pa * s, preferably between 10 5 Pa * s and 1 Pa * s, more preferably between 1 0 4 Pa * s and 1 Pa * s, most preferably between 10 3 Pa * s and 1 Pa * s.
- the processes according to the invention basically function at any hydrophilicity values of the substrate surfaces.
- the hydrophilicity values of the substrate surfaces can, in particular by the use
- Hydrophilic substrate surfaces are used according to the invention especially when a corresponding wetting and thus a higher contact area and a correspondingly higher adhesive strength between the liquid and the substrate surface to be produced.
- substrates on the underside of liquids in the form of a drop should be deposited, have a correspondingly high hydrophilicity.
- Hydrophobic surfaces are mainly used for producing a point contact between a deposited liquid and the substrate surface.
- Such point contacts can be of particular use in those embodiments according to the invention in which the liquid is deposited only on the hydrophilic underside of the upper substrate, while the upper side of the hydrophobic lower substrate only makes a point contact with the convex drop upon contact. The weight of the upper substrate then spreads the drop between the two substrate surfaces starting from this punctiform one
- the hydrophilicity is determined by means of the contact angle method.
- the contact angle method By means of an optical system one misses the angle between the tangent to a drop of liquid and the wetted surface.
- the method is known to the person skilled in the art.
- the measured angle is acute with high hydrophilicity and dull with high hydrophobicity.
- the preferred contact angle between the liquid bonding material and the bonding surfaces (contact surfaces) for hydrophilic substrate surfaces according to the invention is in particular less than 90 °, preferably less than 70 °, more preferably less than 50 °, most preferably less than 30 °.
- Bonding surfaces (contact surfaces) for hydrophobic substrate surfaces according to the invention are in particular greater than 90 °, preferably greater than 125 °, more preferably greater than 150 °, most preferably greater than 1 75 °.
- both substrate surfaces are assumed to be hydrophilic (preferred embodiment).
- the surface of the substrates is preferably hydrophilic. Insofar as the deposition / application of a
- Liquid and the substrate surface is preferably at least so large that the liquid is not pulled by the gravitational force from the substrate surface.
- a hydrophilicity is selected in which the contact angle is at least greater than 0, in particular greater than 1 0 °, preferably greater than 20 °.
- Another relevant physical parameter according to the invention is the adhesion between the bonding layer and the substrates.
- Adhesion is preferably defined by the energy per unit area necessary to separate two interconnected surfaces. The energy is given in J / m 2 .
- Bonding layer and the substrates are chosen in particular so that the energy per unit area is less than 2.5 J / m, preferably less than 0. 1 J / m " , more preferably less than 0.01 J / m, most preferably less than 0.001 J / m 2 , most preferably less than 0.0001 J / m 2 , most preferably less than 0.00001 J / m.
- Area unit between one, in particular on at least one of Substrate applied, coating material and a polymer as a compound material is about 0. 1 J / m 2 .
- a typical, empirically measured average of the energy per unit area, between pure silicon and the same polymer, is about 1 .2 J / m.
- Corresponding values may vary depending on the coating material, substrate material and contamination, in this case a polymer. In the future, far more efficient coating materials can be expected.
- the method performed so that the liquid does not leave the peripheral edge of the two substrates. This prevents that the plant in which the process according to the invention is carried out by the liquid
- connection of the two substrates takes place via the combination of the bonding material applied on the lower / first substrate to the, in particular in the form of a droplet, on the upper / second substrate
- the drop can, for example, by a plant for the separation of liquids against the
- the liquid may have concave regions at the bonding surface of the first, lower substrate, especially if poorly deposited.
- the concave areas are mainly, but not
- the liquid was applied to the substrate surface of one, in particular the lower / first, substrate by a coating technique, in particular by
- Substrate surface of the upper / second substrate becomes the
- the pattern is chosen so that in the
- distribution of the bonding material is an optimal, fast and above all simultaneous wetting of the substrate surfaces.
- This type of distribution is particularly preferred for non-circular, in particular rectangular, substrates, since the length of the path that the connecting material travels from the center to the edge depends on the direction. Therefore, a deposition of the bonding material adapted to the geometry of the substrate, in particular on the lower / first substrate, is advantageous. In particular, a drop of the bonding material is deposited on the upper / second substrate in order to favor the ontaktmaschine invention.
- the liquid has already been predistributed over a long distance (eg, line) or several longer distances (for example, cross).
- the deposited geometric figures preferably accelerate through the
- Liquid amount of the one drop at the connecting surface of the second, upper substrate preferably.
- the gravitational force acts on the drop so that it has a perfect convex shape and has no concave areas.
- Correspondingly accurate is the point-like contact of the drop with the connecting surface of the first, lower substrate. In this embodiment, it only needs to be dispensed once, which saves time and money.
- the temperature of the first and / or second substrate according to the invention is the preferred embodiment of the invention.
- the temperature of the first and / or second substrate according to the invention conceivable.
- the first / upper and / or second / lower substrate is / are tempered depending on the desired viscosity of the liquid.
- the temperature range of the invention is in particular between -100 ° C and 300 ° C, preferably between -50 ° C and 300 ° C, more preferably between 0 ° C and 300 ° C, most preferably between 50 ° C and 300 ° C, on yet
- Temperature range of the temperature of the first and / or second substrate still no permanent crosslinking of the liquid instead.
- the bonding material to be distributed between the two substrates according to the process of the invention is preferably hardened.
- the electromagnetic radiation has in particular a wavelength in the range between l Onm and 2000nm, with preference between l Onm and
- I SOOnm with greater preference between 1m and 1 000nm, most preferably between 1m and 750nm, most preferably between 1m and 500nm.
- the liquid is at a temperature greater than 1 00 ° C ; preferably greater than 200 ° C, more preferably greater than 300 ° C, most preferably greater than 400 ° C, most preferably greater than 50 ° C.
- the thermal conductivity of the substrates is preferably as high as possible in order to heat the heat quickly and efficiently
- the thermal conductivity of at least one of the two substrates is preferably between 0.1 W / (mK) and 5000 W / (mK), preferably between 1 W / (mK) and 2500 W / (mK), more preferably between 10 W / (mK). and 1000 W / (mK), most preferably between 1 00 W / (mK) and 450 W / (m).
- the deposition of the liquid against gravity is effected by the generation of a droplet, in particular held together by the surface tension, at the end of a deposition tube, in particular a needle, and the
- Outlet opening can be set the drop size.
- FIG. 1 a shows a schematic, not to scale, cross section of a first process step of a first embodiment according to the invention
- FIG. 1 b shows a schematic, not to scale, cross section of a second process step of the first embodiment
- FIG. 1 c shows a schematic, not to scale, cross section of a third process step of the first embodiment
- FIG. 1 d shows a schematic, not to scale, cross section of a fourth process step of the first embodiment
- FIG. 2a shows a schematic, not to scale true cross-section of a first process step of a second invention
- FIG. 2b shows a schematic, not to scale, cross-section of a first process step of the second invention Embodiment with an optimally deposited
- FIG. 2c shows a schematic, not to scale, cross section of a first process step of the second embodiment according to the invention with an optimally distributed amount of liquid
- FIG. 2 d shows a schematic, not to scale, cross section, as well as a corresponding upper view, of a first process step of the second embodiment according to the invention with a
- FIG. 3 shows a schematic, not to scale, cross-section of a first process step of a third inventive process
- Figure 4 is a schematic, not to scale true cross-section of an embodiment of the invention for droplet deposition.
- FIG. 1a shows the initial state of a first invention
- a centrally deposited amount of liquid of a bonding material 3 having an ideal convex liquid surface 3o is deposited on the bonding surface 10 of a first, lower substrate 10.
- a second, upper substrate 2 is connected with its connecting surface 2o opposite in the direction of
- alignment means wedge error compensation and / or orientation with respect to
- Sample holder remains fixed and the upper, second substrate 2 is approximated.
- Weight G and one, in particular lower, capillary force K pulls the two substrates 1 and 2 together according to Figure 1 c.
- An oblique or even vertical mounting of the two substrates 1 and 2 is less preferred, since this could distort the liquid. Due to the continuous approach of the two substrates 1 and 2, the liquid is also
- Substrates may even come to an automatic alignment of the two substrates to each other.
- FIG. 1d which takes place primarily when hardenable liquids are used as bonding material 3, the first substrate 1 and / or the second substrate 2, and thus in particular also the bonding material 3, are provided with electromagnetic radiation and / or Heat applied.
- the application of the first substrate 1 and / or the second substrate 2 is symbolized in FIG. 1 d by the arrows acting on the two substrates 1 and 2.
- FIG. 2 a shows a more preferred embodiment according to the invention, in which a drop of compound material 5 is applied to the bonding surface 2 o of the second substrate 2.
- the drop 5 has a perfect convex drop surface 5o due to the gravitational force acting on it.
- the additionally deposited on the lower interface l o liquid 3 ' was by a faulty or poorly calibrated
- the liquid surface 3 o 'thus does not have a perfect, purely convex liquid surface 3 o * . This type of faulty separation is mainly due to incorrectly calibrated, obsolete or dirty nozzles on the separation system, not shown.
- the second embodiment of the present invention can eliminate both problems by depositing a drop 5 on the bonding surface 2o of the upper substrate 2.
- the deposition of a droplet according to the invention on the substrate surface 2o of the substrate 2 allows the, in particular direct, ontaktierung two liquids, the connecting material 3 "with the teardrop-shaped compound material 5. This can potentially resulting during the contact bubbles through fluid dynamic
- the liquid 3 '" can be uniformly distributed over the surface by means of a coating process, in particular by spin coating or spray painting
- Substrate surface l o of the substrate 1 are deposited.
- FIG. 2 d shows a further cross-sectional view according to the invention, not to scale, of two rectangular substrates 1 ', 2' on which a bonding material 3 IV has been applied in the form of a pattern.
- the pattern allows for the contacting of the connecting materials 3 iV and 5 a faster, more efficient, more homogeneous and above all simultaneous
- a single drop 5 is deposited on the bonding surface 2o of the upper substrate 2.
- the drop 5 in turn has due to the Gravitational force a purely convex shape.
- Drop 5 is calculated so that it is sufficient to produce the bonding layer 7 according to the invention between the two substrates 1 and 2.
- FIG. 4 shows a particularly preferred embodiment for depositing the joining material 5 in the form of a drop at one
- Substrate surface 2o The drop is generated by a deposition tube 8 at a Abscheiderohrö réelle 8o.
- the surface tension of the bonding material holds the drop together.
- a relative approach takes place between the droplet 5 and the deposition tube opening 8o and the substrate 2.
- the droplet finally touches the substrate 2 and is separated from the droplet
- a deposition tube diameter D according to the invention is in particular less than 5 mm, preferably less than 2 mm, more preferably less than 1 mm, most preferably less than 0.1 mm, most preferably less than 0.01 mm.
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Abstract
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DE112014006648.6T DE112014006648A5 (de) | 2014-06-26 | 2014-06-26 | Verfahren zum Bonden von Substraten mit Verteilen eines Verbindungsmaterials durch annähern der Substrate |
US15/317,686 US9929124B2 (en) | 2014-06-26 | 2014-06-26 | Method for bonding substrates |
CN201480079975.6A CN106459676B (zh) | 2014-06-26 | 2014-06-26 | 用于以通过靠近基质来分布连接材料从而结合基质的方法 |
KR1020167034718A KR20170023816A (ko) | 2014-06-26 | 2014-06-26 | 기질들을 서로 모이게 하여 연결 재료를 분포시키는 동안 기질들을 결합시키기 위한 방법 |
PCT/EP2014/063603 WO2015197126A1 (de) | 2014-06-26 | 2014-06-26 | Verfahren zum bonden von substraten mit verteilen eines verbindungsmaterials durch annähern der substrate |
ATA9524/2014A AT523072B1 (de) | 2014-06-26 | 2014-06-26 | Verfahren zum Bonden von Substraten |
KR1020217003860A KR102311945B1 (ko) | 2014-06-26 | 2014-06-26 | 기질들을 서로 모이게 하여 연결 재료를 분포시키는 동안 기질들을 결합시키기 위한 방법 |
JP2016573584A JP6495947B2 (ja) | 2014-06-26 | 2014-06-26 | 基板の近接により接合材料を分配することで基板を貼り合わせる方法 |
SG11201610458WA SG11201610458WA (en) | 2014-06-26 | 2014-06-26 | Method for bonding substrates |
TW104113422A TWI651771B (zh) | 2014-06-26 | 2015-04-27 | 用於接合基板之方法 |
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PCT/EP2014/063603 WO2015197126A1 (de) | 2014-06-26 | 2014-06-26 | Verfahren zum bonden von substraten mit verteilen eines verbindungsmaterials durch annähern der substrate |
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US (1) | US9929124B2 (de) |
JP (1) | JP6495947B2 (de) |
KR (2) | KR102311945B1 (de) |
CN (1) | CN106459676B (de) |
AT (1) | AT523072B1 (de) |
DE (1) | DE112014006648A5 (de) |
SG (1) | SG11201610458WA (de) |
TW (1) | TWI651771B (de) |
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US11203182B2 (en) * | 2017-01-17 | 2021-12-21 | Sekisui Chemical Co., Ltd. | Filling-bonding material, protective sheet-equipped filling-bonding material, laminated body, optical device, and protective panel for optical device |
JP7523983B2 (ja) * | 2020-07-22 | 2024-07-29 | キオクシア株式会社 | 半導体装置及び半導体装置の製造方法 |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000191985A (ja) * | 1998-12-25 | 2000-07-11 | Seiko Epson Corp | 部材の貼り合わせ方法、貼り合わせ体の製造方法及び貼り合わせ装置 |
WO2003091784A1 (de) * | 2002-04-25 | 2003-11-06 | Unaxis Balzers Ag | Verfahren zur herstellung einer keilfreien klebefuge |
JP2004010810A (ja) * | 2002-06-10 | 2004-01-15 | Ube Ind Ltd | 一液性エポキシ樹脂組成物および硬化物 |
JP2004325788A (ja) * | 2003-04-24 | 2004-11-18 | Sony Corp | 光学的検査方法及び光学的検査装置、並びに液晶表示装置の製造方法 |
JP2007281392A (ja) * | 2006-04-12 | 2007-10-25 | Matsushita Electric Ind Co Ltd | 部品実装機 |
US20080216952A1 (en) * | 2007-03-06 | 2008-09-11 | Cheng Uei Precision Industry Co., Ltd. | Adhesive Method Of Optical Components |
US20090183819A1 (en) * | 2007-12-27 | 2009-07-23 | Tsutomu Matsuhira | Manufacturing method for a display device |
JP2009289915A (ja) * | 2008-05-28 | 2009-12-10 | Sharp Corp | 半導体装置の製造方法及び製造装置 |
JP2010174077A (ja) * | 2009-01-27 | 2010-08-12 | Sekisui Chem Co Ltd | 電子部品用接着剤 |
US20110130065A1 (en) * | 2009-11-27 | 2011-06-02 | Canon Kabushiki Kaisha | Method for adhering light-transmissive substrates and method for producing display |
WO2011140469A1 (en) * | 2010-05-06 | 2011-11-10 | Zakaryae Fathi | Adhesive bonding composition and method of use |
US20120021233A1 (en) * | 2009-03-10 | 2012-01-26 | Sekisui Chemical Co., Ltd. | Method fo producing semiconductor chip stack, and semiconductor device |
WO2012051003A2 (en) * | 2010-10-11 | 2012-04-19 | Henkel Corporation | Self-aligning adhesive using solvent and solventless organic resin system in electronic packaging |
WO2013016859A1 (en) * | 2011-07-30 | 2013-02-07 | Stokvis Tapes (Shanghai) Co. Ltd. | Layered display device and fabrication method thereof |
EP2695923A2 (de) * | 2012-08-07 | 2014-02-12 | PiOptix GmbH | Verfahren zur durchsichtigen Verklebung von transparenten Schichten |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002285132A (ja) * | 2001-03-23 | 2002-10-03 | Omron Corp | 部材貼り合わせ方法及びその装置 |
CN101317205B (zh) * | 2005-11-29 | 2010-11-03 | 精工电子有限公司 | 显示装置的制造方法以及粘合方法 |
JP2010229272A (ja) * | 2009-03-26 | 2010-10-14 | Seiko Epson Corp | 接合方法および接合体 |
CN103299416A (zh) * | 2011-01-17 | 2013-09-11 | Ev集团E·索尔纳有限责任公司 | 用于从载体基质剥离产品基质的方法 |
JP5990037B2 (ja) * | 2012-05-18 | 2016-09-07 | 東京応化工業株式会社 | 重ね合わせ装置および重ね合わせ方法 |
JP5612043B2 (ja) * | 2012-09-03 | 2014-10-22 | オリジン電気株式会社 | 接合部材の製造方法及び接合部材製造装置 |
DE102013113241B4 (de) | 2013-11-29 | 2019-02-21 | Ev Group E. Thallner Gmbh | Verfahren zum Prägen von Strukturen |
-
2014
- 2014-06-26 AT ATA9524/2014A patent/AT523072B1/de active
- 2014-06-26 KR KR1020217003860A patent/KR102311945B1/ko active IP Right Grant
- 2014-06-26 JP JP2016573584A patent/JP6495947B2/ja active Active
- 2014-06-26 KR KR1020167034718A patent/KR20170023816A/ko active Application Filing
- 2014-06-26 CN CN201480079975.6A patent/CN106459676B/zh active Active
- 2014-06-26 DE DE112014006648.6T patent/DE112014006648A5/de active Pending
- 2014-06-26 WO PCT/EP2014/063603 patent/WO2015197126A1/de active Application Filing
- 2014-06-26 US US15/317,686 patent/US9929124B2/en active Active
- 2014-06-26 SG SG11201610458WA patent/SG11201610458WA/en unknown
-
2015
- 2015-04-27 TW TW104113422A patent/TWI651771B/zh active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000191985A (ja) * | 1998-12-25 | 2000-07-11 | Seiko Epson Corp | 部材の貼り合わせ方法、貼り合わせ体の製造方法及び貼り合わせ装置 |
WO2003091784A1 (de) * | 2002-04-25 | 2003-11-06 | Unaxis Balzers Ag | Verfahren zur herstellung einer keilfreien klebefuge |
JP2004010810A (ja) * | 2002-06-10 | 2004-01-15 | Ube Ind Ltd | 一液性エポキシ樹脂組成物および硬化物 |
JP2004325788A (ja) * | 2003-04-24 | 2004-11-18 | Sony Corp | 光学的検査方法及び光学的検査装置、並びに液晶表示装置の製造方法 |
JP2007281392A (ja) * | 2006-04-12 | 2007-10-25 | Matsushita Electric Ind Co Ltd | 部品実装機 |
US20080216952A1 (en) * | 2007-03-06 | 2008-09-11 | Cheng Uei Precision Industry Co., Ltd. | Adhesive Method Of Optical Components |
US20090183819A1 (en) * | 2007-12-27 | 2009-07-23 | Tsutomu Matsuhira | Manufacturing method for a display device |
JP2009289915A (ja) * | 2008-05-28 | 2009-12-10 | Sharp Corp | 半導体装置の製造方法及び製造装置 |
JP2010174077A (ja) * | 2009-01-27 | 2010-08-12 | Sekisui Chem Co Ltd | 電子部品用接着剤 |
US20120021233A1 (en) * | 2009-03-10 | 2012-01-26 | Sekisui Chemical Co., Ltd. | Method fo producing semiconductor chip stack, and semiconductor device |
US20110130065A1 (en) * | 2009-11-27 | 2011-06-02 | Canon Kabushiki Kaisha | Method for adhering light-transmissive substrates and method for producing display |
WO2011140469A1 (en) * | 2010-05-06 | 2011-11-10 | Zakaryae Fathi | Adhesive bonding composition and method of use |
WO2012051003A2 (en) * | 2010-10-11 | 2012-04-19 | Henkel Corporation | Self-aligning adhesive using solvent and solventless organic resin system in electronic packaging |
WO2013016859A1 (en) * | 2011-07-30 | 2013-02-07 | Stokvis Tapes (Shanghai) Co. Ltd. | Layered display device and fabrication method thereof |
EP2695923A2 (de) * | 2012-08-07 | 2014-02-12 | PiOptix GmbH | Verfahren zur durchsichtigen Verklebung von transparenten Schichten |
Non-Patent Citations (3)
Title |
---|
"True Zero Order Waveplate", 7 December 2013 (2013-12-07), XP055170961, Retrieved from the Internet <URL:http://web.archive.org/web/20131207092122/http://redoptronics.com/true-zero-order-waveplate.html> [retrieved on 20150219] * |
"True Zero-order Waveplates", 27 October 2013 (2013-10-27), XP055170962, Retrieved from the Internet <URL:http://web.archive.org/web/20131027032451/http://optocity.com/waveplate-true-zero-order.htm> [retrieved on 20150219] * |
SHI S H ET AL: "Development of the Wafer Level Compressive-Flow Underfill Process and Its Required Materials", PROCEEDINGS OF THE 49TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 1999), SAN DIEGO, CA, 1.-4. JUNI 1999; NEW YORK, NY: IEEE, US, 1 June 1999 (1999-06-01), pages 961 - 966, XP000903873, ISBN: 978-0-7803-5232-2 * |
Also Published As
Publication number | Publication date |
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DE112014006648A5 (de) | 2017-01-26 |
KR20170023816A (ko) | 2017-03-06 |
KR102311945B1 (ko) | 2021-10-13 |
SG11201610458WA (en) | 2017-01-27 |
CN106459676B (zh) | 2020-01-10 |
KR20210018968A (ko) | 2021-02-18 |
CN106459676A (zh) | 2017-02-22 |
JP6495947B2 (ja) | 2019-04-03 |
TW201601204A (zh) | 2016-01-01 |
AT523072B1 (de) | 2021-05-15 |
US9929124B2 (en) | 2018-03-27 |
TWI651771B (zh) | 2019-02-21 |
US20170117247A1 (en) | 2017-04-27 |
JP2017527981A (ja) | 2017-09-21 |
AT523072A5 (de) | 2021-05-15 |
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