WO2015194804A1 - Élément électroluminescent et boîtier d'élément électroluminescent comprenant celui-ci - Google Patents

Élément électroluminescent et boîtier d'élément électroluminescent comprenant celui-ci Download PDF

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Publication number
WO2015194804A1
WO2015194804A1 PCT/KR2015/005984 KR2015005984W WO2015194804A1 WO 2015194804 A1 WO2015194804 A1 WO 2015194804A1 KR 2015005984 W KR2015005984 W KR 2015005984W WO 2015194804 A1 WO2015194804 A1 WO 2015194804A1
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light emitting
layer
electrode layer
emitting device
disposed
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PCT/KR2015/005984
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English (en)
Korean (ko)
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서재원
최석범
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엘지이노텍(주)
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Priority to EP15810403.4A priority Critical patent/EP3157069A4/fr
Priority to CN201580032518.6A priority patent/CN106463580A/zh
Priority to US15/319,633 priority patent/US9947835B2/en
Publication of WO2015194804A1 publication Critical patent/WO2015194804A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00

Definitions

  • Embodiments relate to a light emitting device and a light emitting device package including the same.
  • Light emitting devices such as light emitting diodes and laser diodes using semiconductors of Group 3-5 or 2-6 compound semiconductor materials have various colors such as red, green, blue and ultraviolet light due to the development of thin film growth technology and device materials. It is possible to realize efficient white light by using fluorescent materials or combining colors, and it has advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Has
  • a light emitting diode backlight which replaces a cold cathode fluorescent lamp (CCFL) constituting a backlight of an LCD (Liquid Crystal Display) display device of an optical communication means
  • CCFL cold cathode fluorescent lamp
  • LCD Liquid Crystal Display
  • FIG. 1 is a view showing the structure of a conventional horizontal high voltage light emitting device.
  • a plurality of light emitting cells 20 may be disposed on a substrate 10, and each of the light emitting cells 20 may include a first conductive semiconductor layer 21, an active layer 22, and the like.
  • a first electrode layer 30 formed of a second conductive semiconductor layer 23 and electrically connected to the first conductive semiconductor layer, a second electrode layer 40 disposed on the second conductive semiconductor layer, and a light emitting cell. It comprises a passivation layer 50 for protecting and electrically separating the first electrode and the second electrode.
  • the conventional horizontal high voltage driving light emitting device structure shown in FIG. 1 uses a thick sapphire (Al 2 O 3 ) substrate having a thickness of about 100 ⁇ m. There is a problem.
  • a flip-chip type light emitting device As a method for solving the heat dissipation problem, a flip-chip type light emitting device is used.
  • the light emitting device has a reflective layer on the second electrode layer, thereby improving the light emission efficiency by changing the path of photons upward.
  • the efficiency of the light emission amount extracted to the upper portion is lower than the light emission amount generated in the active layer.
  • 2 is a view showing a light emitting phenomenon in a light emitting device having a flip chip structure.
  • the embodiment aims to improve the light efficiency of the light emitting device.
  • Embodiments include a substrate; A first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer disposed on the substrate and spaced apart from each other, and penetrating the active layer from a surface of the second conductive semiconductor layer; A plurality of light emitting cells in which via holes are formed to a part of the layer; A first electrode layer electrically connected to the first conductivity type semiconductor layer at the bottom surface of the via hole; A second electrode layer disposed on the second conductive semiconductor layer; And a first passivation layer electrically separating the first electrode layer and the second electrode layer, wherein the first electrode layer is electrically connected to a second electrode layer of the light emitting cell adjacent to the light emitting cell.
  • the first passivation layer may be disposed on the second electrode layer, sidewalls of the via holes, and sidewalls of the light emitting cells.
  • the first passivation layer may be further disposed on a substrate between adjacent light emitting cells.
  • the device may further include a second passivation layer disposed on the first electrode layer.
  • the second passivation layer may be disposed on the entire region of the surface of the light emitting cell, and open regions may be formed in correspondence with at least one of the first electrode layer and the second electrode layer.
  • the second passivation layer may be a material including at least one of Si, N, Ti, and O.
  • the first electrode layer may be an ohmic electrode including at least one of Al and Ag.
  • the first passivation layer may have a reflective film structure in which a plurality of layers are stacked.
  • the reflective film in which the plurality of layers are stacked may be a distribution Bragg reflective film.
  • the second electrode layer may include a transparent electrode layer and a reflective layer.
  • Another embodiment is a substrate; A first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer disposed on the substrate and spaced apart from each other, and penetrating the active layer from a surface of the second conductive semiconductor layer; A plurality of light emitting cells in which via holes are formed to a part of the layer; A first electrode layer electrically connected to the first conductivity type semiconductor layer at the bottom surface of the via hole; A second electrode layer disposed on the second conductive semiconductor layer; And a first passivation layer electrically separating the first electrode layer and the second electrode layer, wherein at least one via hole is formed in the light emitting cell, and the first electrode layer connected to the via hole is a via hole adjacent to the via hole.
  • a light emitting device electrically connected to a first electrode layer of and a second electrode layer of a light emitting cell adjacent to the light emitting cell.
  • the first passivation layer may be disposed on the second electrode layer, sidewalls of the plurality of via holes, and sidewalls of the light emitting cells.
  • the first passivation layer may be further disposed on a substrate between adjacent light emitting cells.
  • the device may further include a second passivation layer disposed on the first electrode layer.
  • the second passivation layer may be disposed on the entire region of the surface of the light emitting cell, and open regions may be formed in correspondence with at least one of the first electrode layer and the second electrode layer.
  • the second passivation layer may be a material including at least one of Si, N, Ti, and O.
  • the first electrode layer may be an ohmic electrode including at least one of Al and Ag.
  • the first passivation layer may have a reflective film structure in which a plurality of layers are stacked.
  • the second electrode layer may include a transparent electrode layer and a reflective layer.
  • Yet another embodiment includes a submount; Any one of the light emitting elements in the above embodiment; And a pair of metal bumps disposed between the submount and the light emitting device to flip chip bond the first electrode and the second electrode of the light emitting device to the submount.
  • the first passivation layer and the first electrode layer having the stacked structure are disposed on a substrate, which is a spaced space between the plurality of light emitting cells, to reflect light even inside the light emitting cell and on a substrate on which the light emitting cell is not disposed. It is possible to exhibit light emission by the high luminous efficiency can be shown.
  • FIG. 1 is a view showing a conventional horizontal high voltage driving light emitting device
  • FIG. 2 is a view showing a light emitting phenomenon in a light emitting device having a conventional flip chip structure
  • 3A and 3B are sectional views and a plan view of an embodiment of a light emitting device
  • 4A and 4B are sectional views and a plan view of this embodiment of the light emitting element
  • FIG. 5 is a view showing a light emitting device including a first passivation layer including a plurality of layers
  • FIG. 6 is a view showing a light emitting phenomenon of the light emitting device according to the embodiment.
  • FIGS. 7A to 7B are diagrams illustrating a light emitting device including a second passivation layer
  • FIGS. 8A to 8F are views illustrating one embodiment of a method of manufacturing a light emitting device
  • FIG. 9 is a view schematically showing a plan view of a layout of a light emitting device
  • FIG. 10 is a view showing an embodiment of a flip chip package of a light emitting device
  • FIG. 11 is a view illustrating an embodiment of a backlight unit in which a light emitting device is disposed
  • FIG. 12 is a diagram illustrating an embodiment of a lighting apparatus in which a light emitting device is disposed.
  • the above (on) or below (on) or under) when described as being formed on the "on or under” of each element, the above (on) or below (on) or under) includes two elements in which the two elements are in direct contact with each other or one or more other elements are formed indirectly between the two elements.
  • the above (on) or below when expressed as “on” or "under”, it may include the meaning of the downward direction as well as the upward direction based on one element.
  • each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description.
  • the size of each component does not entirely reflect the actual size.
  • 3A and 3B are cross-sectional views and a plan view of a light emitting device according to an embodiment.
  • the light emitting device may include a substrate 110, a plurality of light emitting cells 120, a first electrode layer 130, a second electrode layer 140, and a first passivation layer 150.
  • the substrate 110 may be formed of a material suitable for semiconductor material growth, a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate.
  • the substrate may use at least one of sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga 2 0 3 .
  • the substrate may be a patterned sapphire substrate (PSS: Patterned Sapphire Substrate) surface is processed to increase the light extraction efficiency.
  • PSS Patterned Sapphire Substrate
  • the plurality of light emitting cells 120 may be arranged to be spaced apart from each other on the substrate 110, the plurality of light emitting cells may be at least two, and a plurality of light emitting cells may form a plurality of columns or rows. have.
  • Each light emitting cell may include a first conductive semiconductor layer 121, an active layer 122, and a second conductive semiconductor layer 123.
  • the first conductivity type semiconductor layer 121 may be formed of a semiconductor compound. It may be implemented as a compound semiconductor, such as Group 3-5, Group 2-6, and the first conductivity type dopant may be doped.
  • the first conductive semiconductor layer is an n-type semiconductor layer
  • the first conductive dopant may be an n-type dopant and may include Si, Ge, Sn, Se, Te, but is not limited thereto.
  • the first conductive semiconductor layer is a semiconductor material having a composition formula of In x Al y Ga (1-xy) N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x + y ⁇ 1) It may include.
  • the first conductive semiconductor layer may be formed of any one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP.
  • the active layer 122 emits light having energy determined by an energy band inherent in the material in which the electrons injected through the first conductive semiconductor layer and the holes injected through the second conductive semiconductor layer meet each other to form the active layer.
  • the active layer may be at least one of a double junction structure, a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. Can be formed.
  • the active layer may be formed by injecting trimethyl gallium gas (TMGa), ammonia gas (NH 3 ), nitrogen gas (N 2 ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure. It is not.
  • the well layer / barrier layer of the active layer is, for example, one or more pairs of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, InAlGaN / InAlGaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP It may be formed as a structure, but is not limited thereto.
  • the well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.
  • a conductive clad layer (not shown) may be formed on or below the active layer.
  • the conductive cladding layer may be formed of a semiconductor having a bandgap wider than the barrier layer or the bandgap of the active layer.
  • the conductive clad layer may include GaN, AlGaN, InAlGaN, or a superlattice structure.
  • the conductive clad layer may be doped with n-type or p-type.
  • the second conductivity type semiconductor layer 123 is disposed on the active layer 122.
  • the second conductivity type semiconductor layer 123 may be formed of a semiconductor compound. It may be implemented as a compound semiconductor, such as Group 3-5, Group 2-6, and the second conductivity type dopant may be doped. For example, it may include a semiconductor material having a composition formula of In x Al y Ga 1- xy N (0 ⁇ x ⁇ 1 , 0 ⁇ y ⁇ 1 , 0 ⁇ x + y ⁇ 1 ).
  • the second conductivity-type semiconductor layer 33 is a p-type semiconductor layer
  • the second conductivity-type dopant may be a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba.
  • a portion of the upper portion of the light emitting cell is formed by an etching process. It may have a via hole 120a structure through which the portion of the first conductivity-type semiconductor layer 121 is exposed through the active layer 122.
  • a part of the first conductive semiconductor layer 121 is exposed by etching a portion of the second conductive semiconductor layer 123 and the active layer 122 on the upper part of the light emitting cell by mesa etching. It can be done.
  • the first electrode layer 130 is electrically connected to the first conductivity-type semiconductor layer 121 at the bottom surface of the via hole 120a formed in the light emitting cell 120.
  • the second electrode layer 140 may be disposed on the second conductive semiconductor layer 123, and may be disposed to electrically connect the first electrode layer 130 and the second electrode layer 140.
  • the first passivation layer 150 may be disposed, and the first electrode layer 130 may be formed to be electrically connected to the second electrode layer 140 of the adjacent light emitting cell in one light emitting cell.
  • the first electrode layer 130 is disposed on the first passivation layer 150.
  • the first electrode layer 130 is disposed in contact with the first conductive semiconductor layer 121 that is not formed on the bottom surface of the via hole 120a and is opened.
  • the first passivation layer may not be formed on the second electrode layer 140 and may be disposed in contact with the opened second electrode layer 140.
  • a portion of the first electrode layer 130 may be disposed on or around the second electrode layer 140. Separately, the first passivation layer 150 may be exposed.
  • the first electrode layer 130 may be an n-type ohmic electrode layer, and may include Al (Aluminum) or Ag (Silver) to serve as a reflective layer, and may include Al, Cr (Chrome) / Al, Ti (Titanium) / Al. , Ag, or Ni (Nickel) / Ag.
  • the second electrode layer 140 may be disposed on the second conductive semiconductor layer 123.
  • the second electrode layer 140 may be formed of a light transmissive conductive material and a metal material.
  • a light transmissive conductive material For example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and indium aluminum (AZO) zinc oxide), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON (IZO Nitride), AGZO (Al Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx / ITO, Ni / IrOx / Au, or Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, It may be formed including at least one of Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt
  • the second electrode layer 140 may be composed of a p-type ohmic electrode layer and a reflective layer.
  • the p-type ohmic electrode layer may be indium tin oxide (ITO), ZnO, InO, SnO, or an alloy thereof, and the reflective layer may include Ag or Al, but is not limited thereto.
  • the first passivation layer 150 serves to protect the light emitting cells, and to electrically separate the first electrode layer 130 and the second electrode layer 140 between adjacent light emitting cells 120 or in one light emitting cell. Can be formed.
  • the first passivation layer 150 is also disposed on the sidewalls of the via holes 120a formed in the second electrode layer 140 and the light emitting cells 120 and the sidewalls of the formed light emitting cells. However, a portion of the exposed first conductive semiconductor layer 121, which is the bottom surface of the via hole 120a formed in the light emitting cell, and the second electrode layer 140 of the neighboring light emitting cell, for electrical connection between adjacent light emitting cells. May be arranged except.
  • the first passivation layer 150 may also be disposed on the substrate 110 between the light emitting cells 120 adjacent to each other.
  • the first electrode layer 130 may be disposed on the entire upper surface of the formed first passivation layer 150.
  • the first electrode layer 130 may electrically connect two adjacent light emitting cells 120.
  • the formed first electrode layer 130 continuously connects the first electrode layer 130 of one of the two light emitting cells 120 and the second electrode layer 140 of the other light emitting cell 120.
  • the plurality of light emitting cells 120 may be electrically connected in series, or the same polarity may be used in one light emitting cell 120 and the other light emitting cell 120 of two adjacent light emitting cells 120.
  • the plurality of light emitting cells 120 may be connected in parallel by connecting the electrodes 130 and 130 to each other.
  • the first passivation layer 150 may be made of an inorganic film or a non-conductive oxide or nitride, and may be made of a material including any one of Si, N, Ti, and O, such as SiN, SiO 2 , TiO 2, and the like.
  • light emitting cells are disposed adjacent to the substrate 110 and arbitrarily divided by dotted lines to distinguish adjacent light emitting cells.
  • the first electrode layer 130 is in electrical contact with the first conductive semiconductor layer (not shown in plan view), and the first electrode layer 130 is in contact with the second electrode layer 140 of the adjacent light emitting cell.
  • the second electrode layer 140 may be electrically connected to the second conductivity-type semiconductor layer 123.
  • the first electrode layer 130 in electrical contact with the first conductivity type semiconductor layer and the second electrode layer 140 in electrical contact with the second conductivity type semiconductor layer 123 in one light emitting cell may include a first passivation layer ( The first passivation layer 150 may be disposed in an area between adjacent light emitting cells.
  • 4A and 4B show a cross-sectional view and a plan view of this embodiment of the light emitting element.
  • the light emitting device may include a substrate 110, a plurality of light emitting cells 120, a first electrode layer 130, a second electrode layer 140, and a first passivation layer 150.
  • At least one via hole 120a or 120b is formed in the light emitting cell 120, and the first electrode layer 130 connected to the via hole 120b is the first of the via hole 120a adjacent to the via hole 120b. It may be electrically connected to the electrode layer.
  • the via hole 120a may be electrically connected to the second electrode layer of the light emitting cell adjacent to the light emitting cell.
  • the via holes shown in FIGS. 3A and 3B are formed in the shape of a truncated cone of the upper and lower straits, and are arranged in one direction in one direction of the light emitting device, but the via holes may form a plurality of columns or rows, and the shape of the via holes or via holes may be formed.
  • the arrangement is not limited to this.
  • uniform light emission quality may be obtained in one light emitting cell.
  • the first passivation layer 150 may be composed of two or more layers 150a and 150b different from each other, and the first layer 150a and the second layer 150b in the two or more layers. ) May be placed two or more times alternately with each other.
  • the first layer 150a and the second layer 150b may be reflective layers made of materials having different refractive indices, and the refractive index of the first layer may be greater than that of the second layer.
  • the second layer may have a distribution Bragg reflective film (DBR) structure in which a plurality of layers are stacked.
  • DBR distribution Bragg reflective film
  • the first layer 150a of the reflective layer may include at least one of Si, TiO 2 and SiNx, and the second layer 150b having a lower refractive index than the first layer may be Al 2 O 3 , SiO 2 , SiNx It may include at least one of.
  • the light generated in the active layer 122 is totally reflected from the substrate into the light emitting cell, the light may be extracted to the outside without being absorbed into the light emitting device.
  • the light emitted from the side of the light emitting cell may also cause light refraction to occur at each of the interfaces between the first layer 150a and the second layer 150b having different refractive indices constituting the first passivation layer 150. This can widen the area where light can be emitted to the outside of the light emitting device.
  • the first passivation layer 150 has a stacked structure to allow multiple reflections, and the metal is included in the first electrode layer 130 disposed on the first passivation layer 150.
  • the reflection efficiency of the light emitted from the active layer can be improved.
  • the first passivation layer 150 having the DBR structure and the first electrode layer 130 including the reflective metal are disposed on the front surface of the substrate in the separated region between the plurality of light emitting cells, and the light emitting cell region and the cell where the actual light is emitted. Light reflection may occur in the entire region of the light emitting device including the isolation region of, thereby improving luminous efficiency.
  • the first passivation layer and the first electrode layer are disposed in the substrate areas between the spaced apart light emitting cells in which the light emitting cells are not arranged. Since it can occur, the luminous efficiency excellent in comparison with the conventional structure can be expected.
  • the second passivation layer 160 may further include a second passivation layer 160.
  • the second passivation layer 160 may include the first electrode layer 130 formed in the above embodiment. ) May be disposed on the upper portion of the light emitting device 120 and may be disposed on the entire area of the light emitting device including the surface of the light emitting cell 120.
  • the upper part of the second electrode layer of the left light emitting cell is opened to expose the second electrode layer, and the electrode may be connected to the open area from the outside as described below.
  • At least one light emitting cell of the plurality of light emitting cells disposed on the substrate may have an open area corresponding to the first electrode layer and the second electrode layer, respectively. It may be connected to the external electrode through the two electrode layer.
  • the second passivation layer 160 may be non-conductive, and in detail, may be a non-conductive oxide, a non-conductive nitride, or an organic film, and more specifically, a material including at least one of Si, N, Ti, and O. Can be done.
  • Each layer in the light emitting device is metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma chemical vapor deposition (PECVD), molecular beam growth Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), or the like, may be formed using, but is not limited to.
  • MOCVD metal organic chemical vapor deposition
  • CVD chemical vapor deposition
  • PECVD plasma chemical vapor deposition
  • MBE molecular beam growth Molecular Beam Epitaxy
  • HVPE Hydride Vapor Phase Epitaxy
  • FIGS. 8A to 8F are views illustrating a method of manufacturing a light emitting device according to an embodiment of the present invention.
  • FIG. 8A illustrates that a light emitting cell layer is formed by sequentially growing a first conductive semiconductor layer 121, an active layer 122, and a second conductive semiconductor layer 123 on a substrate 100 and forming a mask on the top of the light emitting cell layer. 300).
  • FIG. 8B illustrates a portion of the light emitting cell layer including the first conductive semiconductor layer 121, the active layer 122, and the second conductive semiconductor layer 123 by etching according to a pattern of the disposed mask to remove each of the light emitting cells from the substrate. Separation is performed to form a plurality of light emitting cells.
  • 8C illustrates at least one via hole in the upper portion of the light emitting cell by passing through the second conductive semiconductor layer 123 and the active layer 122 through a predetermined etching process to expose a portion of the first conductive semiconductor layer 121.
  • Form 120a
  • a via hole is formed to expose a portion of the first conductive semiconductor layer 121 by removing a portion of the second conductive semiconductor layer 123 and the active layer 122, and then to form a plurality of light emitting cells.
  • the light emitting cell 120 including the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may be exposed to be removed to expose the substrate 110 in a predetermined region.
  • the second electrode layer 140 is disposed on the second conductive semiconductor layer 123 of the light emitting cell, and the first passivation layer 150 is disposed on the entire region including the plurality of light emitting cells and the substrate between adjacent light emitting cells. ).
  • the formed first passivation layer 150 is disposed so that a portion of the first conductive semiconductor layer 121 and the second electrode layer 140 on the bottom surface of the via hole structure are opened.
  • the first electrode layer 130 is disposed on the entire surface of the light emitting cell including the upper portion of the first passivation layer 150 and a part of the first conductive semiconductor layer 121 and the second electrode layer 140 opened by an etching process. ). In this case, a portion of the first electrode layer is formed to be opened to electrically short the first electrode layer 130 and the second electrode layer 140 in one light emitting cell.
  • the second passivation layer 160 is formed as a whole including a short portion of the opened first electrode layer and an upper portion of the disposed first electrode layer.
  • the formed second passivation layer 160 allows the at least one first electrode layer and the second electrode layer to be opened to be connected to the external electrode in the light emitting device.
  • FIG. 9 is a view briefly showing an embodiment of a light emitting device layout in which a plurality of light emitting cells are disposed when a light emitting cell is formed by the manufacturing method of FIGS. 8A to 8F.
  • FIG. 9 illustrates only a part of the plurality of layers formed and included by the method of manufacturing the light emitting device according to the embodiment of FIGS. 8A to 8F.
  • a plurality of light emitting cells 120 may be spaced apart from each other on the substrate 110, and a second passivation layer 160 may be formed on the spaced apart light emitting cells 120.
  • the second passivation layer 160 may be formed on the entire surface of the light emitting device including an upper portion of the light emitting cell 120 except for the at least one first electrode layer and the second electrode layer for electrical connection with the external electrode.
  • the portion shown as the second passivation layer 160 may be an area that separates the adjacent light emitting cells 120, and a first electrode layer (not shown) and a first passivation layer (not shown) are disposed below the second passivation layer 160. C) may be further included.
  • the first passivation layer, the first electrode layer, and the second passivation layer are stacked and disposed in an area that separates and separates the plurality of light emitting cells 120, thereby preventing an electrical short circuit between the light emitting cells 120.
  • light reflection and refraction may occur in the areas separated from each other, thereby improving light efficiency of the light emitting device.
  • a first electrode layer (not shown) may be in electrical contact with the first conductivity type semiconductor layer (not shown) through the via hole 120a shown in FIG. 9.
  • first electrode layer (not shown) may be in electrical contact with the second electrode layer 140 of the adjacent light emitting cell, and the second electrode layer 140 may be a second conductive semiconductor layer (not shown) of the light emitting cell 120. ) Can be electrically connected.
  • FIG. 10 is a cross-sectional view illustrating an embodiment of a light emitting device package including a light emitting device.
  • the light emitting device package according to the present embodiment includes a submount 220, a light emitting device of any one of the light emitting devices in the above embodiment, and a first electrode layer of the light emitting device disposed between the submount and the light emitting device.
  • a light emitting device package includes first and second bump parts 221 and 222 for flip chip bonding a second electrode layer on the sub-mount, respectively.
  • the first metal layer 231 and the second metal layer 232 may be further disposed on the submount 220 to electrically connect the submount and the light emitting device.
  • the first bump part 221 and the second bump part 222 may be included.
  • the first bump part 221 and the second bump part 222 may be ball-shaped solders.
  • the first bump part 221 and the second bump part 222 may be made of a conductive material, and in detail, may be made of metal.
  • the first bump part 221 and the second bump part 222 are disposed in each of the first metal layer 231 and the second metal layer 232 on the submount 220, and are in electrical contact with the electrodes of the light emitting device. .
  • the light emitting device according to the above embodiment is implemented in the form of a flip chip, but the embodiment is not limited thereto, and the light emitting device according to the other embodiment may be implemented in the form of a flip chip. It may be.
  • the submount 220 is mounted with a light emitting element.
  • the submount 220 may be implemented as a package body or a printed circuit board, and may have various forms in which the light emitting device may be flip chip bonded.
  • the light emitting device is disposed on the submount 220 and is electrically connected to the submount 220 by the first bump part 221 and the second bump part 222.
  • the sub-mount 220 may be formed of a resin such as polyphthalamide (PPA), liquid crystal polymer (LCP), polyamide 9T (PA9T), metal, photosensitive glass, sapphire, and the like. It may include a ceramic, a printed circuit board (Printed Circuit Board) and the like. However, the sub-mount 220 according to the embodiment is not limited to these materials.
  • the first metal layer 231 and the second metal layer 232 are spaced apart from each other in the horizontal direction on the upper surface of the sub-mount 220.
  • the upper surface of the submount 220 may be a surface facing the light emitting device.
  • the first metal layer 231 and the second metal layer 232 may be conductive metals such as aluminum (Al) or rhodium (Rh).
  • the first bump part 221 and the second bump part 222 are disposed between the sub mount 220 and the light emitting device.
  • the first bump part 221 may electrically connect the first electrode layer 130 and the first metal layer 231.
  • the second bump part 220 may electrically connect the second electrode layer 140 and the second metal layer 232.
  • the first bump part 221 or the second bump part 222 may use at least one of Pb, Sn, Au, Ge, Cu, Bi, Cd, Zn, Ag, Ni, and Ti, and alloys thereof. Can be used.
  • Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the light emitting device or the light emitting device package described in the above embodiments, and for example, the lighting system may include a lamp or a street lamp.
  • FIG. 11 is a diagram illustrating an embodiment of an image display device including a light emitting device package.
  • the image display device 500 includes a light source module, a reflector 520 on the bottom cover 510, and light disposed in front of the reflector 520 and emitted from the light source module.
  • the light guide plate 540 for guiding the front of the image display apparatus, the first prism sheet 550 and the second prism sheet 560 disposed in front of the light guide plate 540, and the second prism sheet 560.
  • a color filter 580 disposed in front of the panel 570 disposed in front of the panel 570.
  • the light source module includes a light emitting device package 535 on the circuit board 530.
  • the circuit board 530 may be a PCB and the like
  • the light emitting device disposed in the light emitting device package 535 may be in accordance with the above-described embodiments, if the embodiment according to the absorption of light into the light emitting device It is possible to reduce the reflection and increase the reflectivity, and the light can be reflected in the entire light emitting device including a plurality of light emitting cells and a separate region between each light emitting cell, thereby having a large area light emitting effect. Improved light efficiency can be expected.
  • the bottom cover 510 may accommodate components in the image display apparatus 500.
  • the reflecting plate 520 may be provided as a separate component as shown in the figure, or may be provided in the form of coating with a highly reflective material on the back of the light guide plate 540 or the front of the bottom cover 510.
  • the reflective plate 520 may use a material having high reflectance and being extremely thin, and may use polyethylene terephtalate (PET).
  • PET polyethylene terephtalate
  • the light guide plate 540 scatters the light emitted from the light emitting device package module so that the light is uniformly distributed over the entire area of the screen of the liquid crystal display.
  • the light guide plate 530 is made of a material having good refractive index and high transmittance, and may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), polyethylene (PE), or the like.
  • PMMA polymethyl methacrylate
  • PC polycarbonate
  • PE polyethylene
  • an air guide type display device may be implemented.
  • the first prism sheet 550 is formed of a translucent and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed.
  • the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.
  • the direction of the floor and the valley of one surface of the support film may be perpendicular to the direction of the floor and the valley of one surface of the support film in the first prism sheet 550. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.
  • the first prism sheet 550 and the second prism sheet 560 form an optical sheet
  • the optical sheet is formed of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Or a combination of one prism sheet and a micro lens array.
  • the liquid crystal display panel (Liquid Crystal Display) may be disposed on the panel 570, and in addition to the liquid crystal display panel 560, another type of display device requiring a light source may be provided.
  • the panel 570 is a state in which a liquid crystal is located between the glass bodies and the polarizing plates are placed on both glass bodies in order to use polarization of light.
  • the liquid crystal has an intermediate characteristic between a liquid and a solid.
  • the liquid crystal which is an organic molecule having fluidity, like a liquid, has a state in which the liquid crystal is regularly arranged like a crystal. Display an image.
  • the liquid crystal display panel used in the display device uses a transistor as an active matrix method as a switch for adjusting a voltage supplied to each pixel.
  • the front surface of the panel 570 is provided with a color filter 580 transmits the light projected by the panel 570, only the red, green and blue light for each pixel can represent the image.
  • FIG. 12 is a diagram illustrating an embodiment of a lighting apparatus in which a light emitting device is disposed.
  • the lighting apparatus may include a cover 1100, a light source module 1200, a heat sink 1400, a power supply 1600, an inner case 1700, and a socket 1800.
  • the lighting apparatus according to the embodiment may further include any one or more of the member 1300 and the holder 1500, the light source module 1200 includes a light emitting device package according to the above-described embodiments, In the plurality of light emitting cell regions and the separated regions between the light emitting cells, the reflectance of light emitted by the stacked reflective film structure of the first passivation layer and the first electrode layer having the metal component can be increased, thereby achieving high brightness.
  • the flip chip structure can also improve the heat dissipation effect.
  • the cover 1100 may have a shape of a bulb or hemisphere, and may be provided in a hollow shape and a part of which is opened.
  • the cover 1100 may be optically coupled to the light source module 1200.
  • the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200.
  • the cover 1100 may be a kind of optical member.
  • the cover 1100 may be coupled to the heat sink 1400.
  • the cover 1100 may have a coupling part that couples with the heat sink 1400.
  • the inner surface of the cover 1100 may be coated with a milky paint.
  • the milky paint may include a diffuser to diffuse light.
  • the surface roughness of the inner surface of the cover 1100 may be greater than the surface roughness of the outer surface of the cover 1100. This is for the light from the light source module 1200 to be sufficiently scattered and diffused to be emitted to the outside.
  • the material of the cover 1100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like.
  • polycarbonate is excellent in light resistance, heat resistance, and strength.
  • the cover 1100 may be transparent and opaque so that the light source module 1200 is visible from the outside.
  • the cover 1100 may be formed through blow molding.
  • the light source module 1200 may be disposed on one surface of the heat sink 1400. Thus, heat from the light source module 1200 is conducted to the heat sink 1400.
  • the light source module 1200 may include a light emitting device package 1210, a connection plate 1230, and a connector 1250.
  • the member 1300 is disposed on an upper surface of the heat sink 1400 and has a plurality of light emitting device packages 1210 and guide grooves 1310 into which the connector 1250 is inserted.
  • the guide groove 1310 corresponds to the board and the connector 1250 of the light emitting device package 1210.
  • the surface of the member 1300 may be coated or coated with a light reflecting material.
  • the surface of the member 1300 may be coated or coated with a white paint.
  • the member 1300 is reflected on the inner surface of the cover 1100 and reflects the light returned to the light source module 1200 side again toward the cover 1100. Therefore, it is possible to improve the light efficiency of the lighting apparatus according to the embodiment.
  • the member 1300 may be made of an insulating material, for example.
  • the connection plate 1230 of the light source module 1200 may include an electrically conductive material. Therefore, electrical contact may be made between the heat sink 1400 and the connection plate 1230.
  • the member 1300 may be made of an insulating material to block an electrical short between the connection plate 1230 and the heat sink 1400.
  • the heat sink 1400 receives heat from the light source module 1200 and heat from the power supply 1600 to radiate heat.
  • the holder 1500 blocks the accommodating groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 accommodated in the insulating unit 1710 of the inner case 1700 is sealed.
  • Holder 1500 has guide protrusion 1510.
  • the guide protrusion 1510 has a hole through which the protrusion 1610 of the power supply 1600 passes.
  • the power supply unit 1600 processes or converts an electrical signal provided from the outside and provides the power signal to the light source module 1200.
  • the power supply unit 1600 is accommodated in the accommodating groove 1725 of the inner case 1700, and is sealed in the inner case 1700 by the holder 1500.
  • the power supply unit 1600 may include a protrusion 1610, a guide 1630, a base 1650, and an extension 1670.
  • the guide part 1630 has a shape protruding outward from one side of the base 1650.
  • the guide part 1630 may be inserted into the holder 1500.
  • a plurality of parts may be disposed on one surface of the base 1650.
  • the plurality of components may include, for example, a DC converter for converting an AC power provided from an external power source into a DC power source, a driving chip for controlling the driving of the light source module 1200, and an ESD for protecting the light source module 1200. (ElectroStatic discharge) protection element and the like, but may not be limited thereto.
  • the extension 1670 has a shape protruding outward from the other side of the base 1650.
  • the extension 1670 is inserted into the connection 1750 of the inner case 1700 and receives an electrical signal from the outside.
  • the extension 1670 may be provided to be equal to or smaller than the width of the connection portion 1750 of the inner case 1700.
  • Each end of the “+ wire” and the “ ⁇ wire” may be electrically connected to the extension 1670, and the other end of the “+ wire” and the “ ⁇ wire” may be electrically connected to the socket 1800.
  • the inner case 1700 may include a molding unit together with the power supply unit 1600 therein.
  • the molding part is a part where the molding liquid is hardened, so that the power supply part 1600 can be fixed inside the inner case 1700.
  • the above-described light emitting device package may be applied to various fields.
  • the light emitting device package may be applied to a lighting device.
  • the lighting device may include at least one of a backlight unit, a lighting unit, an indicating device, a lamp, or a street lamp.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

Un mode de réalisation concerne un élément électroluminescent comprenant : un substrat ; une pluralité de cellules électroluminescentes disposées à intervalle sur le substrat, comprenant une première couche semi-conductrice conductrice, une couche active et une seconde couche semi-conductrice conductrice et ayant un trou d'interconnexion formé de la surface de la seconde couche semi-conductrice conductrice jusqu'à une partie de la première couche semi-conductrice conductrice en pénétrant dans la couche active ; une première couche d'électrode connectée électriquement à la première couche semi-conductrice conductrice au niveau du côté inférieur du trou d'interconnexion ; une seconde couche d'électrode disposée sur la partie supérieure de la seconde couche semi-conductrice conductrice ; et une première couche de passivation permettant de séparer électriquement la première couche d'électrode et la seconde couche d'électrode, laquelle première couche d'électrode est électriquement connectée à la seconde couche d'électrode d'une cellule électroluminescente adjacente à la cellule électroluminescente, et en raison de la formation de la première couche de passivation et de la première couche d'électrode sur les surfaces supérieures de la pluralité de cellules électroluminescentes et sur le substrat entre les cellules électroluminescentes à intervalle, l'efficacité d'extraction de lumière sur la totalité de la surface de l'élément électroluminescent peut être améliorée, ce qui permet d'augmenter le rendement électroluminescent.
PCT/KR2015/005984 2014-06-16 2015-06-15 Élément électroluminescent et boîtier d'élément électroluminescent comprenant celui-ci WO2015194804A1 (fr)

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EP15810403.4A EP3157069A4 (fr) 2014-06-16 2015-06-15 Élément électroluminescent et boîtier d'élément électroluminescent comprenant celui-ci
CN201580032518.6A CN106463580A (zh) 2014-06-16 2015-06-15 发光元件和包括发光元件的发光元件封装
US15/319,633 US9947835B2 (en) 2014-06-16 2015-06-15 Light-emitting element and light-emitting package comprising same

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KR10-2014-0072659 2014-06-16
KR1020140072659A KR102197082B1 (ko) 2014-06-16 2014-06-16 발광 소자 및 이를 포함하는 발광소자 패키지

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109075184A (zh) * 2016-05-03 2018-12-21 首尔伟傲世有限公司 发光二极管
CN109983588A (zh) * 2016-11-10 2019-07-05 Lg伊诺特有限公司 半导体元件
CN113725333A (zh) * 2021-07-20 2021-11-30 华灿光电（浙江）有限公司 红光发光二极管芯片及其制备方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014112551A1 (de) * 2014-09-01 2016-03-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
CN107408606B (zh) * 2015-03-30 2019-12-13 索尼半导体解决方案公司 发光元件、发光单元、发光面板装置及驱动发光面板装置的方法
CN204964955U (zh) * 2015-07-28 2016-01-13 合肥鑫晟光电科技有限公司 电连接结构、阵列基板和显示装置
WO2017039198A1 (fr) * 2015-09-01 2017-03-09 엘지이노텍(주) Dispositif d'éclairage
KR102510006B1 (ko) * 2016-05-24 2023-03-14 엘지이노텍 주식회사 반도체 소자
US11355549B2 (en) 2017-12-29 2022-06-07 Lumileds Llc High density interconnect for segmented LEDs
KR102543183B1 (ko) 2018-01-26 2023-06-14 삼성전자주식회사 반도체 발광소자
JP6717324B2 (ja) * 2018-02-27 2020-07-01 日亜化学工業株式会社 発光素子
JP2019149480A (ja) * 2018-02-27 2019-09-05 豊田合成株式会社 半導体素子、発光装置、および発光装置の製造方法
KR102607596B1 (ko) 2018-05-11 2023-11-29 삼성전자주식회사 반도체 발광소자 및 이를 이용한 반도체 발광소자 패키지
US11282984B2 (en) * 2018-10-05 2022-03-22 Seoul Viosys Co., Ltd. Light emitting device
CN112864296B (zh) * 2019-01-29 2022-06-28 泉州三安半导体科技有限公司 一种led封装器件
JP2022532327A (ja) * 2019-05-14 2022-07-14 ソウル バイオシス カンパニー リミテッド 発光チップ
US10971650B2 (en) 2019-07-29 2021-04-06 Lextar Electronics Corporation Light emitting device
CN112582511B (zh) * 2019-09-30 2022-08-02 成都辰显光电有限公司 微发光二极管芯片及显示面板
CN112582512B (zh) * 2019-09-30 2022-02-15 成都辰显光电有限公司 微发光二极管芯片及显示面板
CN112582509B (zh) * 2019-09-30 2022-07-08 成都辰显光电有限公司 微发光二极管芯片及显示面板
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
US20220399397A1 (en) * 2020-03-03 2022-12-15 Hcp Technology Co., Ltd. Light emitting diode and preparation method therefor
KR20210132259A (ko) * 2020-04-24 2021-11-04 삼성디스플레이 주식회사 화소, 이를 구비한 표시 장치, 및 그의 제조 방법
US11901491B2 (en) 2020-10-29 2024-02-13 Lumileds Llc Light emitting diode devices

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118294A (ja) * 2000-04-24 2002-04-19 Nichia Chem Ind Ltd フリップチップ型発光ダイオード及び製造方法
WO2014038794A1 (fr) * 2012-09-07 2014-03-13 서울바이오시스 주식회사 Réseau de diodes électroluminescentes de niveau de tranche
US20140070245A1 (en) * 2011-06-24 2014-03-13 Cree, Inc. High voltage monolithic led chip
KR20140044059A (ko) * 2012-10-04 2014-04-14 엘지이노텍 주식회사 발광 소자 및 이의 제조 방법
US20140159071A1 (en) * 2012-12-06 2014-06-12 Byung Yeon CHOI Light emitting device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6005258A (en) 1994-03-22 1999-12-21 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities
US7109650B2 (en) * 2002-07-08 2006-09-19 Lg.Philips Lcd Co., Ltd. Active matrix organic electroluminescent display device and method of fabricating the same
KR100696194B1 (ko) 2005-11-21 2007-03-20 한국전자통신연구원 질화물 반도체 발광소자 및 그 제조방법
KR101142965B1 (ko) * 2010-09-24 2012-05-08 서울반도체 주식회사 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
CN103782399B (zh) 2011-08-09 2016-11-09 三星电子株式会社 氮化物半导体发光元件
DE102012108879B4 (de) * 2012-09-20 2024-03-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip mit mehreren nebeneinander angeordneten aktiven Bereichen

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002118294A (ja) * 2000-04-24 2002-04-19 Nichia Chem Ind Ltd フリップチップ型発光ダイオード及び製造方法
US20140070245A1 (en) * 2011-06-24 2014-03-13 Cree, Inc. High voltage monolithic led chip
WO2014038794A1 (fr) * 2012-09-07 2014-03-13 서울바이오시스 주식회사 Réseau de diodes électroluminescentes de niveau de tranche
KR20140044059A (ko) * 2012-10-04 2014-04-14 엘지이노텍 주식회사 발광 소자 및 이의 제조 방법
US20140159071A1 (en) * 2012-12-06 2014-06-12 Byung Yeon CHOI Light emitting device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3157069A4 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109075184A (zh) * 2016-05-03 2018-12-21 首尔伟傲世有限公司 发光二极管
CN109983588A (zh) * 2016-11-10 2019-07-05 Lg伊诺特有限公司 半导体元件
CN113725333A (zh) * 2021-07-20 2021-11-30 华灿光电（浙江）有限公司 红光发光二极管芯片及其制备方法
CN113725333B (zh) * 2021-07-20 2023-05-09 华灿光电（浙江）有限公司 红光发光二极管芯片及其制备方法

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US20170236979A1 (en) 2017-08-17
KR102197082B1 (ko) 2020-12-31
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CN106463580A (zh) 2017-02-22
EP3157069A4 (fr) 2017-11-01
KR20150144048A (ko) 2015-12-24

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