WO2016208819A1 - Élément électroluminescent et boîtier d'élément électroluminescent le comprenant - Google Patents

Élément électroluminescent et boîtier d'élément électroluminescent le comprenant Download PDF

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Publication number
WO2016208819A1
WO2016208819A1 PCT/KR2015/012053 KR2015012053W WO2016208819A1 WO 2016208819 A1 WO2016208819 A1 WO 2016208819A1 KR 2015012053 W KR2015012053 W KR 2015012053W WO 2016208819 A1 WO2016208819 A1 WO 2016208819A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
emitting structure
light
emitting device
semiconductor layer
Prior art date
Application number
PCT/KR2015/012053
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English (en)
Korean (ko)
Inventor
전용한
서덕원
김원호
김태기
문효정
이은형
Original Assignee
엘지이노텍(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍(주) filed Critical 엘지이노텍(주)
Publication of WO2016208819A1 publication Critical patent/WO2016208819A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

Definitions

  • a white light emitting device that can replace a fluorescent light bulb or an incandescent bulb that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device.
  • CCFL Cold Cathode Fluorescence Lamp
  • LCD liquid crystal display
  • a hole pattern must be formed in the mask layer 280.
  • the raw material supplied from the central region and the edge region of the light emitting device is non-uniformly distributed, and FIG. 3A. And as shown in Figure 3b there may be a region where the nanorods are non-uniform in size or the nanorods are not grown.
  • the first light emitting structure may have different inclination angles of the side surfaces and the top surface, and the side surfaces and the top surface may emit light of different wavelength regions.
  • the first light emitting structure R and the protruding structure 322b constituting the same will be described in detail.
  • the cross section of the protruding structure 322b may be a hexagonal column or a circular or polygonal shape, and each protruding structure may be arranged irregularly in addition to the regular arrangement, and the size or shape of each protruding structure may be the same or different. have.
  • a gap is present between the first light emitting structures R and in an inner region adjacent to the second light emitting structure S, and a gap filling layer 370 is disposed in each gap.
  • the gap filling layer 370 may be formed of a metal layer and formed by electroplating.
  • the light emitting device of FIG. 5 may be completed.
  • the material of the cover 1100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like.
  • polycarbonate is excellent in light resistance, heat resistance, and strength.
  • the cover 1100 may be transparent and opaque so that the light source module 1200 is visible from the outside.
  • the cover 1100 may be formed through blow molding.
  • the inner case 1700 may include a molding unit together with the power supply unit 1600 therein.
  • the molding part is a part where the molding liquid is hardened, so that the power supply part 1600 can be fixed inside the inner case 1700.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Selon un mode de réalisation, l'invention concerne un élément électroluminescent comprenant : un substrat ; une première structure électroluminescente, qui est agencée dans une première zone du substrat, qui comprend une première couche de semi-conducteur conductrice, une couche active et une seconde couche de semi-conducteur conductrice, et qui présente une forme de points ; et une seconde structure électroluminescente, qui est agencée dans une seconde zone du substrat, qui comprend la première couche de semi-conducteur conductrice, la couche active et la seconde couche de semi-conducteur conductrice, et qui présente une forme de lignes.
PCT/KR2015/012053 2015-06-22 2015-11-10 Élément électroluminescent et boîtier d'élément électroluminescent le comprenant WO2016208819A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2015-0088169 2015-06-22
KR1020150088169A KR102346720B1 (ko) 2015-06-22 2015-06-22 발광소자 및 이를 포함하는 발광소자 패키지

Publications (1)

Publication Number Publication Date
WO2016208819A1 true WO2016208819A1 (fr) 2016-12-29

Family

ID=57585228

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2015/012053 WO2016208819A1 (fr) 2015-06-22 2015-11-10 Élément électroluminescent et boîtier d'élément électroluminescent le comprenant

Country Status (2)

Country Link
KR (1) KR102346720B1 (fr)
WO (1) WO2016208819A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101898658B1 (ko) * 2017-07-05 2018-09-13 세종대학교산학협력단 백색 발광 소자 및 그 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011155315A (ja) * 2011-05-20 2011-08-11 Toshiba Corp 発光装置の製造方法
KR20110102061A (ko) * 2010-03-10 2011-09-16 삼성엘이디 주식회사 Ｌｅｄ 소자 및 그 제조 방법
JP2014526799A (ja) * 2011-09-06 2014-10-06 センサー エレクトロニック テクノロジー インコーポレイテッド 層成長のためのパターンを有する基板の設計
KR20150050284A (ko) * 2013-10-31 2015-05-08 삼성전자주식회사 나노구조 반도체 발광소자 및 제조방법
KR20150064413A (ko) * 2013-12-03 2015-06-11 삼성전자주식회사 나노구조 반도체 발광소자

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110102061A (ko) * 2010-03-10 2011-09-16 삼성엘이디 주식회사 Ｌｅｄ 소자 및 그 제조 방법
JP2011155315A (ja) * 2011-05-20 2011-08-11 Toshiba Corp 発光装置の製造方法
JP2014526799A (ja) * 2011-09-06 2014-10-06 センサー エレクトロニック テクノロジー インコーポレイテッド 層成長のためのパターンを有する基板の設計
KR20150050284A (ko) * 2013-10-31 2015-05-08 삼성전자주식회사 나노구조 반도체 발광소자 및 제조방법
KR20150064413A (ko) * 2013-12-03 2015-06-11 삼성전자주식회사 나노구조 반도체 발광소자

Also Published As

Publication number Publication date
KR102346720B1 (ko) 2022-01-03
KR20160150343A (ko) 2016-12-30

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