WO2016208819A1

WO2016208819A1 - Light-emitting element and light-emitting element package comprising same

Info

Publication number: WO2016208819A1
Application number: PCT/KR2015/012053
Authority: WO
Inventors: 전용한; 서덕원; 김원호; 김태기; 문효정; 이은형
Original assignee: 엘지이노텍(주)
Priority date: 2015-06-22
Filing date: 2015-11-10
Publication date: 2016-12-29
Also published as: KR20160150343A; KR102346720B1

Abstract

An embodiment provides a light-emitting element comprising: a substrate; a first light-emitting structure, which is arranged in a first area of the substrate, which comprises a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and which has a dot shape; and a second light-emitting structure, which is arranged in a second area of the substrate, which comprises the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and which has a line shape.

Description

Light emitting device and light emitting device package including the same

Embodiments relate to a light emitting device and a light emitting device package including the same.

Group 3-5 compound semiconductors, such as GaN and AlGaN, are widely used for optoelectronics and electronic devices due to many advantages, such as having a wide and easy to adjust band gap energy.

In particular, light emitting devices such as a light emitting diode or a laser diode using a group 3-5 or 2-6 compound semiconductor material of a semiconductor are developed using thin film growth technology and device materials such as red, green, blue and ultraviolet light. Various colors can be realized, and efficient white light can be realized by using fluorescent materials or combining colors.Low power consumption, semi-permanent life, fast response speed, safety and environment compared to conventional light sources such as fluorescent and incandescent lamps can be realized. Has the advantage of affinity.

Therefore, a white light emitting device that can replace a fluorescent light bulb or an incandescent bulb that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to diode lighting devices, automotive headlights and traffic lights.

1 is a view showing a conventional light emitting device.

The conventional light emitting device 100 includes a light emitting structure 120 including a first conductive semiconductor layer 122, an active layer 124, and a second conductive semiconductor layer 126 on a substrate 110 made of sapphire or the like. The first electrode 150 and the second electrode 160 are disposed on the first conductive semiconductor layer 122 and the second conductive semiconductor layer 126, respectively.

The light emitting device 100 has an energy band inherent to a material in which electrons injected through the first conductive semiconductor layer 122 and holes injected through the second conductive semiconductor layer 126 meet each other to form the active layer 124. Emits light with energy determined by it. The light emitted from the active layer 124 may vary depending on the composition of the material forming the active layer 124, and may be blue light, ultraviolet light (UV), deep ultraviolet light, or light in another wavelength region.

The active layer 124 may be a double junction structure, a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. It can be formed as.

The conventional light emitting device described above has the following problems.

Since the substrate and the light emitting structure are heterogeneous materials, the lattice constant mismatch is very large and the thermal expansion coefficient difference between them is very large, so that dislocations, melt-backs, and cracks deteriorate crystallinity. Cracks, pits, surface morphology defects, and the like may occur.

In order to solve the above problems, the buffer layer 115 may be formed as shown in FIG. 1, but the potential is still formed to deteriorate the quality of the light emitting structure, and thermal energy is emitted from the light emitting structure instead of light energy in the active layer. This can lower the efficiency of the light emitting element itself.

In order to solve the above problems, the light emitting device of FIG. 2 has been proposed.

In the light emitting device 300 of FIG. 2, the light emitting structure 220 is disposed in the shape of a nano rod. The active layer 224 and the second conductive semiconductor layer 226 are grown around the first conductive semiconductor layer 222 partially grown through the mask layer 280, and transmit light transmissive between the nanorods. The conductive layer 270 is filled, and the first electrode 265 and the second electrode 275 are disposed on the first conductive semiconductor layer 222 and the transparent conductive layer 270, respectively.

In the light emitting device 200 of FIG. 2, the light emitting structure 220 is grown to have a nanorod shape, thereby reducing occurrence of the above-described potential.

However, in order to grow the nanorod-shaped light emitting structure 220, a hole pattern must be formed in the mask layer 280. The raw material supplied from the central region and the edge region of the light emitting device is non-uniformly distributed, and FIG. 3A. And as shown in Figure 3b there may be a region where the nanorods are non-uniform in size or the nanorods are not grown.

The embodiment aims to improve the quality of the light emitting device and evenly improve the light efficiency in all areas.

Embodiments include a substrate; A dot-shaped first light emitting structure disposed in the first region of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; And a line-shaped second light emitting structure disposed in the second region of the substrate and including the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.

The second region may be disposed around the first region.

The first light emitting structure and the second light emitting structure may each be nanoscale in diameter.

The second light emitting structure may form a closed curved surface around the first light emitting structures.

The second light emitting structure may have two line shapes in parallel with each other.

The second light emitting structure may have three or more line shapes having cross sections parallel to each other.

The first light emitting structure may have a nanorod shape.

The inclination angle of the side surface and the inclination angle of the upper surface of the first light emitting structure may be different from each other.

Sides of the second light emitting structure may be inclined.

The inclination angle of the side surface of the second light emitting structure may be different from the inclination angle of the upper surface of the first light emitting structure.

The first light emitting structure and the second light emitting structure may be grown on the mask, respectively.

The size of the first light emitting structure between the masks may be smaller than the size of the second light emitting structure between the masks.

The light emitting device may further include a gap filling layer disposed between the first light emitting structures and between the first light emitting structure and the second light emitting structure.

The first light emitting structure and the second light emitting structure may emit light in different wavelength regions.

The first light emitting structure may have different inclination angles of the side surfaces and the top surface, and the side surfaces and the top surface may emit light of different wavelength regions.

Another embodiment is a substrate; A plurality of first light emitting structures disposed on the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and emitting light in a first wavelength region; And a line-shaped second light emitting structure including the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer and emitting light in a second wavelength region different from the first wavelength region. Provided is an element.

Each of the first light emitting structure and the second light emitting structure may be grown on a mask, and the size of the first light emitting structure may be smaller than the size of the second light emitting structure between the masks.

Yet another embodiment includes a circuit board; First and second electrode pads disposed on the circuit board; And the light emitting device of any one of claims 1 to 19 disposed on the circuit board, wherein the first electrode pad and the second electrode pad are directly connected to the first electrode and the second electrode of the light emitting device, respectively. Provided is a light emitting device package in contact.

In the light emitting device according to the embodiment, the conductive layer is formed as a gap filling layer by electroplating, so as to stably support the light emitting structure, and the conductive layer has a flat surface to use bumps when the light emitting device is disposed in the light emitting device package. Instead, the first electrode and the second electrode of the light emitting device may be directly bonded to the electrode pad on the circuit board.

In addition, the crystal surfaces of the gallium nitride (GaN) -based semiconductor of each of the first light emitting structure and the second light emitting structure may be different from each other to emit light of different wavelength ranges. The light may be combined and mixed into the light of the new wavelength range.

1 and 2 are views showing a conventional light emitting device,

3A and 3B are diagrams illustrating non-uniform growth of nanorods in the light emitting device of FIG.

4A to 4C are diagrams illustrating one embodiment of a light emitting device;

5 is a cross-sectional view of the first embodiment of the light emitting element;

6a to 6d are views illustrating a manufacturing process of the light emitting device of FIG.

7 is a view showing the uniformity improvement of the light emitting structure of the light emitting device,

8 is a view showing the wavelength change according to the shape and angle change of the light pattern in the light emitting device,

9 is a view showing a light emitting device package in which the light emitting devices are arranged in a flip chip type;

10 is a diagram illustrating an embodiment of an image display device including a light emitting device package;

11 is a diagram illustrating an embodiment of a lighting apparatus in which a light emitting device is disposed.

Hereinafter, with reference to the accompanying drawings an embodiment of the present invention that can specifically realize the above object.

In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the above (on) or below (on) or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. In addition, when expressed as “on” or “under”, it may include the meaning of the downward direction as well as the upward direction based on one element.

4A to 4C are diagrams illustrating embodiments of a light emitting device.

4A to 4C, light emitting structures of the light emitting device are schematically illustrated from an upper surface thereof. In the light emitting device according to the embodiment, a light emitting structure having a nano rod shape is disposed in a dot shape in a first region in the center, and a second light emission having a stripe pattern in a second region of an edge. The structure may be placed.

The second light emitting structure of the stripe pattern refers to a light emitting structure having a line shape, and a plurality of light emitting structures may be connected to each other. The edge of the central region of the first area is surrounded by the second area, and in the top view of FIGS. 4A to 4C, the second light emitting structure may be disposed around the first light emitting structures to form a closed curved surface.

In FIG. 4A, the second light emitting structures of the stripe pattern form a rectangular array, and in the top view of FIG. 4A, two line-shaped light emitting structures S ₁ and S ₂ having cross sections parallel to each other form the second light emitting structure. It is coming true.

4B and 4C, the second light emitting structure having the stripe pattern has an hexagonal arrangement. In the top views of FIGS. 4B and 4C, three line-shaped light emitting structures S ₁ , S ₂ , S3) forms a second light emitting structure.

In addition to the shapes of FIGS. 4A to 4C, the plurality of nanorod-shaped first light emitting structures in the central region may be disposed in various shapes by enclosing the second light emitting structures at the edges, as described below. It is sufficient to be arranged around the first light emitting structure so that the gas can be evenly supplied to the central region without flowing out. In addition, the cross section of the second light emitting structure is not necessarily formed around the first light emitting structure, even if there are some broken sections, it is sufficient to prevent the outflow of the source gas to the outside.

5 is a sectional view of a first embodiment of a light emitting element.

The light emitting device 300 includes a substrate 310, a rod-shaped first light emitting structure R and a stripe pattern second light emitting structure S, and respective first light emitting structures R and second. A gap filling layer 370 filling the gap between the light emitting structures S and the first electrode 365 and the second electrode 375 may be included.

The substrate 310 may be formed of a material suitable for growing a semiconductor material or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al ₂ O ₃ ), SiO ₂ , SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, Ga ₂ O ₃ may be used.

When the substrate 310 is formed of sapphire or the like and the light emitting structure 320 including GaN or AlGaN is disposed on the substrate 310, lattice mismatch between GaN or AlGaN and sapphire is very large. The thermal expansion coefficient difference between them is also very large, so dislocations, melt-backs, cracks, pits, surface morphology defects, etc., which degrade crystallinity may occur. As a result, a buffer layer (not shown) may be formed of AlN or the like.

Although not shown, an undoped GaN layer or an AlGaN layer may be disposed between the buffer layer (not shown) and the light emitting structure 320 to prevent the above-described potential from being transferred into the light emitting structure 220.

The light emitting structure 320 includes a first conductive semiconductor layer 322, an active layer 324, and a second conductive semiconductor layer 326. The light emitting structure 320 includes a plurality of nano rod-shaped first light emitting structures R disposed at a central region, and a second light emitting structure S disposed at an edge of the first light emitting structure R. FIG. do. Shapes of the first light emitting structure R and the second light emitting structure S may be the same as described with reference to FIGS. 4A to 4C.

The first conductive semiconductor layer 322 may include a base layer 322a and a protrusion structure 322b, which may be formed of a thin thin film on the entire surface of the substrate 310. 322b is formed by growing a plurality of protruding structures on the base layer 322a.

As shown, the protruding structure 322b has a side surface disposed in a direction perpendicular to the base layer 322a, and an upper surface thereof is disposed at an acute angle with the side surface. In addition, the upper surface of the protruding structure 322b may be flat and provided at right angles to the side surface, which is also the same in the embodiments described below.

The first light emitting structure R and the protruding structure 322b constituting the same will be described in detail.

The protrusion structure 322b may have a scale R ₁ in the horizontal direction, but may have a scale of about 10 micrometers in some cases. The horizontal size R ₁ of the protruding structure 322b may be greater than the distance d ₁ between the adjacent mask layers 380, for example, R ₁ may be two or more times d ₁ . The above-described distance d ₁ may be a diameter of an opening between adjacent mask layers 380 in which the protruding structure 322b may be grown from the base layer 322a.

In the first conductive semiconductor layer 322, the height h ₁ of the base layer 322a may be 100 nanometers to 10 micrometers. If the height is smaller than 100 nanometers, the growth of the first conductive semiconductor layer 322 may occur. May not be sufficient, and if it is larger than 10 micrometers, the thickness of the first light emitting structure R may increase too much.

The pitch P between the height h ₂ of the protruding structure 322b and the protruding structure 322b may vary depending on the wavelength and the amount of light emitted from the first light emitting structure R. FIG.

The cross section of the protruding structure 322b may be a hexagonal column or a circular or polygonal shape, and each protruding structure may be arranged irregularly in addition to the regular arrangement, and the size or shape of each protruding structure may be the same or different. have.

Hereinafter, the second light emitting structure S and the protruding structure 322b constituting the same will be described in detail.

The protruding structure 322b has a size R ₂ in the horizontal direction, but may have a scale of about 10 micrometers in some cases, and the protruding structure 322b forming the first light emitting structure R has a horizontal direction. May be greater than the size R ₁ .

The horizontal size R ₂ of the protruding structure 322b may be greater than the distance d ₂ between the adjacent mask layers 380, for example, R ₂ may be two or more times d ₂ . The distance d ₂ described above may be the diameter of the opening between the adjacent mask layers 380 from which the protruding structure 322b may be grown from the base layer 322a.

The height h ₃ of the protruding structure 322b may be higher than the height h ₂ of the protruding structure 322b constituting the first light emitting structure R.

That is, the second light emitting structure S of the edge region is disposed around the first light emitting structure R of the central region, and the source gas or the like hits the second light emitting structure S in the growth process and then moves to the central region. Since the second light emitting structure S needs to be supplied, the height of the second light emitting structure S may be greater than that of the first light emitting structure R. FIG.

A cross section of the protruding structure 322b constituting the second light emitting structure R may have a triangular shape on the mask layer 380.

In FIG. 5, the base layer 322a and the protruding structure 322b are divided by dotted lines, but may be made of the same material, and may be grown before and after using the mask layer 380, respectively. The mask layer 380 may divide the base layer 322a and the protruding structure 322b, and may also divide each protruding structure 322b.

The first conductive semiconductor layer 322 may be formed of a compound semiconductor such as a group III-V group or a group II-VI, and may be doped with the first conductive dopant. The first conductive semiconductor layer 322 is a semiconductor material having Al _x In _y Ga _(1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), and AlGaN. , GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of any one or more.

When the first conductivity type semiconductor layer 322 is an n type semiconductor layer, the first conductivity type dopant may include an n type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductivity type semiconductor layer 322 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 324 may be grown in a thin film around the protrusion structure 322b, and the second conductivity-type semiconductor layer 326 may be formed in a thin film on the periphery of the active layer 324 and on the mask layer 380, respectively. Can be.

The active layer 324 is disposed between the first conductivity type semiconductor layer 322 and the second conductivity type semiconductor layer 326 and includes a single well structure, a multi well structure, a single quantum well structure, and a multi quantum well. A multi-quantum well (MQW) structure, a quantum dot structure or a quantum line structure may be included.

The active layer 324 is formed of a well layer and a barrier layer, for example, AlGaN / AlGaN, InGaN / GaN, InGaN / InGaN, AlGaN / GaN, InAlGaN / GaN, GaAs (InGaAs) using a compound semiconductor material of group III-V elements. / AlGaAs, GaP (InGaP) / AlGaP may be formed of any one or more pair structure, but is not limited thereto.

The well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer.

The second conductivity type semiconductor layer 326 may be formed of a semiconductor compound. The second conductive semiconductor layer 326 may be implemented with compound semiconductors such as group III-V and group II-VI, and may be doped with the second conductive dopant. The second conductivity-type semiconductor layer 326 is, for example, a semiconductor material having a compositional formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), AlGaN , GaN AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of any one or more, for example, the second conductivity type semiconductor layer 326 may be made of Al _x Ga _(1-x) N.

When the second conductive semiconductor layer 326 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductivity-type semiconductor layer 326 may be formed as a single layer or a multilayer, but is not limited thereto.

Although not shown, an electron blocking layer may be disposed between the active layer 324 and the second conductive semiconductor layer 326. The electron blocking layer may have a superlattice structure, for example, AlGaN doped with a second conductivity type dopant may be disposed, and GaN having a different composition ratio of aluminum may be formed as a layer. It may be arranged alternately with each other.

A gap is present between the first light emitting structures R and in an inner region adjacent to the second light emitting structure S, and a gap filling layer 370 is disposed in each gap. The gap filling layer 370 may be formed of a metal layer and formed by electroplating.

Since the gap filling layer 370 is made of a conductive material, the gap filling layer 370 stably supports the first light emitting structure R and the second light emitting structure S and evenly holes or electrons in the entire area of the second conductive semiconductor layer 226. Can be supplied.

In order to form the first electrode 365 at the same height as the second electrode 375, the gap filling layer 360 may be separately formed adjacent to the first and second light emitting structures R and S. The

gap filling layers

360 and 370 may be made of the same material.

The conductive layer 340 may be disposed on the surface of the second conductive semiconductor layer 326.

The conductive layer 340 may have high optical transmittance while having ohmic characteristics, and in detail, may include a transparent conductive oxide or a mixed metal oxide, and more specifically, the transparent conductive oxide may include ITO, IZO, AZO, ZnO, SnO _x , and the mixed metal oxide may be RuO _x , IrO _x , PtO _x .

Although not shown, a reflective layer may be disposed around the conductive layer 340 between the conductive layer 340 and the gap filling layer 370. The reflective layer may include silver (Ag), aluminum (Al), and rhodium (Rh). ) Or an alloy thereof. The reflective layer may reflect light emitted from the active layer 324 to the upper surface, especially when the light emitting device 300 is disposed upside down in the light emitting device package.

The first electrode 365 and the second electrode 375 may be disposed on the

gap filling layers

360 and 370, respectively. The first electrode 365 and the second electrode 375 include a single layer including at least one of aluminum (Al), titanium (Ti), chromium (Cr), nickel (Ni), copper (Cu), and gold (Au). Or it may be formed in a multilayer structure.

When forming the electrode on the nano-scale light emitting structure (R, S), it is difficult to arrange a stable electrode due to the aspect ratio of the light emitting structure (R, S), if the electrode is formed on the upper surface of the light emitting structure (R, S) Although it may be difficult to supply current to the entire area of the (R, S), the conductive layer is formed of the gap filling layer 370 by electroplating, etc. to stably support the light emitting structures (R, S), and the conductive layer is flat When the light emitting device is disposed on the light emitting device package having one surface, the first electrode 365 and the second electrode 375 of the light emitting device may be directly bonded to the electrode pad on the circuit board without using bumps.

In addition, since the crystal planes of the gallium nitride (GaN) -based semiconductors are different from each other, the first light emitting structure R and the second light emitting structure S may emit light of different wavelength ranges. In 300), light of two or more wavelength regions may be combined and mixed into light of a new wavelength region.

6A through 6D are views illustrating a manufacturing process of the light emitting device of FIG. 4.

As shown in FIG. 4A, the light emitting structure 320 may be grown on the substrate 310. Specifically, it is as follows.

The base layer 322a of the first conductivity-type semiconductor layer 322 is grown on the substrate 210, and the protruding structure 322b of the first conductivity-type semiconductor layer is grown after selectively placing the mask layer 280. The protruding structure 322b is selectively grown between the mask layers 380.

In this case, the distance between the mask layers 380 may be narrowed in the central region and wider in the edge region.

As shown in FIG. 1, the first conductive semiconductor layer 322 is grown in the shape of the protrusion structure 322b so that dislocations grown at the interface with the substrate 310 may be blocked without growing upward in the drawing. have.

Then, an active layer 324 and a second conductivity type semiconductor layer 326 are grown on each protruding structure 322b. The composition of the first conductive semiconductor layer 322, the active layer 324, the second conductive semiconductor layer 326, and the like may be the same as described above.

In FIG. 6A, the first light emitting structure R in the center region and the second light emitting structure S in the edge region are grown. Side surfaces of the first light emitting structure R may be inclined perpendicularly to the base layer 322a, and an upper surface thereof may form a first inclination angle θ _{1 that} is an acute angle with respect to the base layer 322a. Side surfaces of the second light emitting structure S may form a second inclination angle θ _{2 that} is an acute angle with respect to the base layer 322a.

In the process of FIG. 6A, the second light emitting structure S is grown around the central region at the edge region, and at this time, the source gas and the like are blocked by the second light emitting structure S, and are evenly supplied to the central region, thereby providing the first light emitting structure. (R) may be grown to a size and a diameter smaller than that of the second light emitting structure S evenly in the entire region between the respective mask layers 380. In addition, the first light emitting structure R and the second light emitting structure S may have different crystal planes of gallium nitride, respectively, and may emit light of different wavelength regions.

As shown in FIG. 6B, the conductive layer 340 is formed on the surface of the second conductivity-type semiconductor layer 326 by growth or deposition. The conductive layer 340 may be formed in the same shape as the surface of the protruding structure 322b.

As illustrated in FIG. 6C, the

gap filling layers

360 and 370 may be formed by filling a conductive metal or the like on the conductive layers 240 on the surfaces of the first and second light emitting structures R and S by electroplating or the like. ).

As illustrated in FIG. 6D, when the first electrode 365 and the second electrode 375 are formed on the

gap filling layers

360 and 370, the light emitting device of FIG. 5 may be completed.

7 is a view showing the improvement of uniformity of the light emitting structure of the light emitting device.

The nanorod-shaped first light emitting structure was evenly grown in the center of the light emitting device, and the second light emitting structure of the stripe pattern was grown larger than the first light emitting structure in the edge region.

8 is a view showing a wavelength change according to the shape and angle change of the stripe pattern in the light emitting device.

It can be seen that the peak wavelength of the light emitted from each light emitting structure is different according to the shape and angle of the stripe pattern constituting the light emitting structure. Accordingly, the light emitting device can be designed to emit light in various wavelength regions.

9 is a view illustrating a light emitting device package in which a light emitting device such as FIG. 5 is disposed in a flip chip type.

The first electrode pad 421 and the second electrode pad 422 may be fixed to the support substrate 400 having the cavity through the bonding layer 410. In FIG. 7, the sidewalls of the cavity formed on the support substrate 400 are disposed at an obtuse angle with the bottom surface, but may be disposed at right angles.

In addition, the light emitting device 300 may be arranged in a flip chip type by inverting the top / bottom compared to FIG. 5. It may be directly bonded to the first electrode pad 421 and the second electrode pad 422.

Such a structure does not require a separate bump for coupling between the electrode and the electrode pad, and the light emitted from the light emitting structure 320 may travel upward in FIG. 7.

The light emitting device package may include a configuration such as a phosphor or a molding unit in addition to the above-described configuration.

The light emitting device package may be mounted as one or a plurality of light emitting devices according to the above embodiments, but is not limited thereto.

Hereinafter, an image display apparatus and an illumination apparatus will be described as an embodiment of a lighting system in which the above-described light emitting device package is disposed.

10 is a diagram illustrating an embodiment of an image display device including a light emitting device package.

As shown, the image display device 500 according to the present exemplary embodiment includes a light source module, a reflector 520 on the bottom cover 510, and light disposed in front of the reflector 520 and emitted from the light source module. The light guide plate 540 for guiding the front of the image display device, the first prism sheet 550 and the second prism sheet 560 disposed in front of the light guide plate 540, and the second prism sheet 560. And a color filter 580 disposed in front of the panel 570 disposed in front of the panel 570.

The light source module includes a light emitting device package 535 on the circuit board 530. Here, the circuit board 530 may be a PCB and the like, the light emitting device of the light emitting device package 535 is as described above.

The bottom cover 510 may accommodate components in the image display apparatus 500. The reflecting plate 520 may be provided as a separate component as shown in the figure, or may be provided in the form of coating with a highly reflective material on the back of the light guide plate 540 or the front of the bottom cover 510.

The reflective plate 520 may use a material having a high reflectance and being extremely thin, and may use polyethylene terephthalate (PET).

The light guide plate 540 scatters light emitted from the light emitting device package module so that the light is uniformly distributed over the entire area of the screen of the liquid crystal display. Therefore, the light guide plate 530 is made of a material having a good refractive index and a high transmittance, and may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), polyethylene (PE), or the like. In addition, when the light guide plate 540 is omitted, an air guide type display device may be implemented.

The first prism sheet 550 is formed of a translucent and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In the second prism sheet 560, the direction of the floor and the valley of one surface of the support film may be perpendicular to the direction of the floor and the valley of one surface of the support film in the first prism sheet 550. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.

In the present embodiment, the first prism sheet 550 and the second prism sheet 560 form an optical sheet, and the optical sheet is formed of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Or a combination of one prism sheet and a micro lens array.

The liquid crystal display panel (Liquid Crystal Display) may be disposed on the panel 570, and in addition to the liquid crystal display panel 560, another type of display device requiring a light source may be provided.

The panel 570 is a state in which a liquid crystal is located between the glass bodies and the polarizing plates are placed on both glass bodies in order to use polarization of light. Here, the liquid crystal has an intermediate characteristic between the liquid and the solid, and the liquid crystal, which is an organic molecule having fluidity like a liquid, has a state in which the liquid crystal is regularly arranged like a crystal, and uses the property that the molecular arrangement is changed by an external electric field. Display an image.

The liquid crystal display panel used in the display device uses a transistor as an active matrix method as a switch for adjusting a voltage supplied to each pixel.

The front surface of the panel 570 is provided with a color filter 580 transmits the light projected by the panel 570, only the red, green and blue light for each pixel can represent the image.

The lighting apparatus according to the present embodiment may include a cover 1100, a light source module 1200, a heat sink 1400, a power supply 1600, an inner case 1700, and a socket 1800. In addition, the lighting apparatus according to the embodiment may further include any one or more of the member 1300 and the holder 1500, the light source module 1200 includes a light emitting device package according to the above-described embodiments, The device may be as described above.

The cover 1100 may have a shape of a bulb or hemisphere, and may be provided in a hollow shape and a part of which is opened. The cover 1100 may be optically coupled to the light source module 1200. For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200. The cover 1100 may be a kind of optical member. The cover 1100 may be coupled to the heat sink 1400. The cover 1100 may have a coupling part that couples with the heat sink 1400.

The inner surface of the cover 1100 may be coated with a milky paint. The milky paint may include a diffuser to diffuse light. The surface roughness of the inner surface of the cover 1100 may be greater than the surface roughness of the outer surface of the cover 1100. This is for the light from the light source module 1200 to be sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 1100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 1100 may be transparent and opaque so that the light source module 1200 is visible from the outside. The cover 1100 may be formed through blow molding.

The light source module 1200 may be disposed on one surface of the heat sink 1400. Thus, heat from the light source module 1200 is conducted to the heat sink 1400. The light source module 1200 may include a light emitting device package 1210, a connection plate 1230, and a connector 1250.

The member 1300 is disposed on an upper surface of the heat sink 1400 and has a plurality of light emitting device packages 1210 and guide grooves 1310 into which the connector 1250 is inserted. The guide groove 1310 corresponds to the board and the connector 1250 of the light emitting device package 1210.

The surface of the member 1300 may be coated or coated with a light reflecting material. For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 is reflected on the inner surface of the cover 1100 and reflects the light returned to the light source module 1200 side again toward the cover 1100. Therefore, it is possible to improve the light efficiency of the lighting apparatus according to the embodiment.

The member 1300 may be made of an insulating material, for example. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Therefore, electrical contact may be made between the heat sink 1400 and the connection plate 1230. The member 1300 may be made of an insulating material to block an electrical short between the connection plate 1230 and the heat sink 1400. The heat sink 1400 receives heat from the light source module 1200 and heat from the power supply 1600 to radiate heat.

The holder 1500 blocks the accommodating groove 1719 of the insulating portion 1710 of the inner case 1700. Therefore, the power supply unit 1600 accommodated in the insulating unit 1710 of the inner case 1700 is sealed. Holder 1500 has guide protrusion 1510. The guide protrusion 1510 has a hole through which the protrusion 1610 of the power supply 1600 passes.

The power supply unit 1600 processes or converts an electrical signal provided from the outside and provides the power signal to the light source module 1200. The power supply unit 1600 is accommodated in the accommodating groove 1725 of the inner case 1700, and is sealed in the inner case 1700 by the holder 1500. The power supply unit 1600 may include a protrusion 1610, a guide 1630, a base 1650, and an extension 1670.

The guide part 1630 has a shape protruding outward from one side of the base 1650. The guide part 1630 may be inserted into the holder 1500. A plurality of parts may be disposed on one surface of the base 1650. The plurality of components may include, for example, a DC converter for converting an AC power provided from an external power source into a DC power source, a driving chip for controlling driving of the light source module 1200, and an ESD for protecting the light source module 1200. (ElectroStatic discharge) protection element and the like, but may not be limited thereto.

The extension 1670 has a shape protruding to the outside from the other side of the base 1650. The extension 1670 is inserted into the connection 1750 of the inner case 1700 and receives an electrical signal from the outside. For example, the extension 1670 may be provided to be equal to or smaller than the width of the connection portion 1750 of the inner case 1700. Each end of the “+ wire” and the “− wire” may be electrically connected to the extension 1670, and the other end of the “+ wire” and the “− wire” may be electrically connected to the socket 1800. .

The inner case 1700 may include a molding unit together with the power supply unit 1600 therein. The molding part is a part where the molding liquid is hardened, so that the power supply part 1600 can be fixed inside the inner case 1700.

Although the above description has been made based on the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains may not have been exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

The light emitting device according to the embodiment is improved in quality, and the light efficiency is evenly improved in all areas, so that the light emitting device can be used for lighting devices.

Claims

Board;

A plurality of dot-shaped first light emitting structures disposed in the first region of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; And

And a line-shaped second light emitting structure disposed in the second region of the substrate and including the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer.
According to claim 1,

A light emitting device in which the second region is disposed around the first region.
According to claim 1,

Each of the first light emitting structure and the second light emitting structure has a nanoscale diameter.
According to claim 1,

And the second light emitting structure forms a closed curved surface around the first light emitting structures.
According to claim 1,

The second light emitting structure is a light emitting device having two line cross-sections parallel to each other.
According to claim 1,

The second light emitting structure is a light emitting device having three or more line shapes parallel to each other in cross section.
According to claim 1,

The first light emitting structure is a light emitting device having a nano rod shape.
According to claim 1,

The light emitting device of the first light emitting structure is different from the inclination angle of the side surface and the inclination angle of the upper surface.
According to claim 1,

The side surface of the second light emitting structure is inclined light emitting device.
According to claim 1,

The inclination angle of the side surface of the second light emitting structure and the inclination angle of the upper surface of the first light emitting structure is different.
According to claim 1,

Each of the first light emitting structure and the second light emitting structure is grown on a mask.
The method of claim 11, wherein

The light emitting device having the size of the first light emitting structure between the masks is smaller than the size of the second light emitting structure between the masks.
According to claim 1,

And a gap filling layer disposed between the first light emitting structures and between the first light emitting structure and the second light emitting structure.
According to claim 1,

The first light emitting structure and the second light emitting structure emitting light of a different wavelength region.
According to claim 1,

The first light emitting structure has a different inclination angle between the inclination of the side and the upper surface, the light emitting device emitting light of different wavelength regions of the side and the top surface.
Board;

A plurality of first light emitting structures disposed on the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer and emitting light in a first wavelength region; And

A light emitting device including the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, and including a line-shaped second light emitting structure emitting light in a second wavelength region different from the first wavelength region .
The method of claim 16,

The first light emitting structure has a different inclination angle between the inclination of the side and the upper surface, the light emitting device emitting light of different wavelength regions of the side and the top surface.
The method of claim 16,

And the second light emitting structure forms a closed curved surface around the first light emitting structures.
The method of claim 16,

The first light emitting structure and the second light emitting structure are each grown on a mask, the size of the first light emitting structure between the mask is smaller than the size of the second light emitting structure between the mask.
A circuit board;

First and second electrode pads disposed on the circuit board; And

20. The light emitting device of any one of claims 1 to 19, disposed on the circuit board.

And the first electrode pad and the second electrode pad are in direct contact with the first electrode and the second electrode of the light emitting device.